Radiation-resistant carbon nanotube transistor, manufacturing method and integrated circuit system

Abstract

The present disclosure provides a radiation-resistant carbon nanotube transistor, comprising: a radiation-resistant substrate; a carbon nanotube adhesion layer, the carbon nanotube adhesion layer is formed on the radiation-resistant substrate; a carbon nanotube layer, the carbon nanotube layer is formed on the carbon nanotube adhesion layer, the carbon nanotube layer serves as a channel; and a gate dielectric, the gate dielectric is a polymer ion liquid gel formed on at least a portion of the carbon nanotube layer. The present disclosure also provides a method for manufacturing the radiation-resistant carbon nanotube transistor and an integrated circuit system.

Description

Technical Field

[0001] The present disclosure belongs to the technical field of transistor electronic devices, and in particular relates to a radiation-resistant carbon nanotube transistor, a manufacturing method and an integrated circuit system. Background Art

[0002] Traditional silicon-based integrated circuits use silicon oxide gate dielectrics, substrates, shallow channel isolation layers and other technologies. When exposed to total dose irradiation, many trapped charges will be generated, resulting in increased leakage and threshold voltage drift.

[0003] Although silicon-based integrated circuits can reduce the radiation absorption cross-section by reducing their size, silicon-based is a bulk material and has a reduction limit. Silicon-based integrated circuits can reduce the trapped charge by using high-k gate dielectrics or even vacuum gate dielectrics, etc., but this will increase the leakage probability and reduce gate efficiency.

[0004] Silicon-based integrated circuits use SOI technology for substrate irradiation hardening, but further increasing the total irradiation dose will still produce leakage channels, and the substrate reflects the radiation, causing a secondary irradiation effect.

[0005] Since two-dimensional materials (such as molybdenum sulfide, metal oxide semiconductors, etc.) have a small radiation absorption cross-section, it is possible to reduce radiation absorption, but they are unstable under radiation and will produce obvious defects. Summary of the invention

[0006] In order to solve at least one of the above technical problems, the present disclosure provides a radiation-resistant carbon nanotube transistor, a manufacturing method and an integrated circuit system.

[0007] The radiation-resistant carbon nanotube transistor, manufacturing method and integrated circuit system disclosed in the present invention are implemented through the following technical solutions.

[0008] According to one aspect of the present disclosure, there is provided a radiation-resistant carbon nanotube transistor, comprising: a radiation-resistant substrate; a carbon nanotube adhesion layer, the carbon nanotube adhesion layer being formed on the radiation-resistant substrate; a carbon nanotube layer, the carbon nanotube layer being formed on the carbon nanotube adhesion layer, the carbon nanotube layer serving as a channel; and a gate dielectric, the gate dielectric being a polymer ionic liquid gel formed on at least a portion of the carbon nanotube layer.

[0009] According to the radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the radiation-resistant substrate is a thin film insulating material.

[0010] According to the radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the thin film insulating material is a polyimide (PI) film, a polyethylene terephthalate (PET) film, or a polyethylene naphthalate (PEN) film.

[0011] According to the radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the carbon nanotube adhesion layer is hafnium oxide, aluminum oxide, silicon oxide, or zirconium oxide.

[0012] According to at least one embodiment of the radiation-resistant carbon nanotube transistor of the present disclosure, a buffer layer is formed between the contact interface between the carbon nanotube layer and the polymer ionic liquid gel.

[0013] In the radiation-resistant carbon nanotube transistor according to at least one embodiment of the present disclosure, the buffer layer is aluminum oxide or hafnium oxide.

[0014] According to at least one embodiment of the radiation-resistant carbon nanotube transistor of the present disclosure, the buffer layer has a thickness of 20 nm or less.

[0015] According to the radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the thickness of the carbon nanotube adhesion layer is about 5 nm.

[0016] According to at least one embodiment of the present disclosure, the radiation-resistant carbon nanotube transistor further includes a gate, a source, and a drain, wherein the source and the drain adopt an interdigital electrode structure.

[0017] According to another aspect of the present disclosure, a method for manufacturing a radiation-resistant carbon nanotube transistor is provided, comprising: providing a radiation-resistant substrate; forming a carbon nanotube adhesion layer on the radiation-resistant substrate; forming a carbon nanotube layer as a channel material on the carbon nanotube adhesion layer; and forming a polymer ionic liquid gel as a gate dielectric on at least a portion of the carbon nanotube layer.

[0018] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the radiation-resistant substrate is a thin film insulating material.

[0019] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the thin film insulating material is a polyimide (PI) film, a polyethylene terephthalate (PET) film or a polyethylene naphthalate (PEN) film.

[0020] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the carbon nanotube adhesion layer is formed by depositing hafnium oxide, aluminum oxide, silicon oxide, or zirconium oxide on the radiation-resistant substrate.

[0021] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, a polymer ionic liquid gel ink is prepared by using a copolymer, an ionic liquid and an organic solvent, and the polymer ionic liquid gel ink is inkjetted on at least a portion of the carbon nanotube layer to form the polymer ionic liquid gel.

[0022] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the copolymer is PS-PMMA, PS-PMMA-PS, PS-PEO-PS, P(VDF-HFP), PEG-DA or SOS-N3.

[0023] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the ionic liquid is [EMIM]-[TFSI], [EMIM]-[Tf2N], [EMI]-[TCB], [DEME]-[TFSI], [EMIM]-[OctOSO3] or [BMIM]-[PF6].

[0024] According to the method for manufacturing a radiation-resistant carbon nanotube transistor according to at least one embodiment of the present disclosure, the organic solvent is preferably ethyl acetate.

[0025] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, a polymer ionic liquid gel is formed on at least a portion of the carbon nanotube layer, and before that, a buffer layer is formed at least between the contact interface between the carbon nanotube layer and the polymer ionic liquid gel.

[0026] According to the method for manufacturing a radiation-resistant carbon nanotube transistor of at least one embodiment of the present disclosure, the buffer layer is aluminum oxide or hafnium oxide.

[0027] According to another aspect of the present disclosure, an integrated circuit system is provided, comprising any one of the above-mentioned radiation-resistant carbon nanotube transistors or a radiation-resistant carbon nanotube transistor manufactured by any one of the above-mentioned methods for manufacturing the radiation-resistant carbon nanotube transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings illustrate exemplary embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. These drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification.

[0029] Figure 1 is a schematic structural diagram of a radiation-resistant carbon nanotube transistor according to an embodiment of the present disclosure.

[0030] Figure 2 is a schematic structural diagram of a radiation-resistant carbon nanotube transistor according to another embodiment of the present disclosure.

[0031] Figure 3 is a schematic structural diagram of a radiation-resistant carbon nanotube transistor according to another embodiment of the present disclosure.

[0032] Figure 4 Schematic diagram of the formation of a double layer effect in a polymer ionic liquid gel of a radiation-resistant carbon nanotube transistor according to one embodiment of the present disclosure.

[0033] Figure 5 It is a transfer characteristic curve of a radiation-resistant carbon nanotube transistor (P-type ion gel carbon nanotube field effect transistor) according to one embodiment of the present disclosure.

[0034] Figure 6 It is a transfer characteristic curve of a radiation-resistant carbon nanotube transistor (P-type ion gel carbon nanotube field effect transistor) having a buffer layer with a thickness of 5 nm according to one embodiment of the present disclosure.

[0035] Figure 7 1 is a transfer characteristic curve of a radiation-resistant carbon nanotube transistor (P-type ion gel carbon nanotube field effect transistor) having a buffer layer with a thickness of 10 nm according to one embodiment of the present disclosure.

[0036] Figure 8 It is a transfer characteristic curve of a radiation-resistant carbon nanotube transistor (P-type ion gel carbon nanotube field effect transistor) having a buffer layer with a thickness of 15 nm according to one embodiment of the present disclosure.

[0037] Fig. 9 1 is a transfer characteristic curve of a radiation-resistant carbon nanotube transistor (P-type ion gel carbon nanotube field effect transistor) having a buffer layer with a thickness of 20 nm according to one embodiment of the present disclosure.

[0038] Fig.10 The figure is a graph showing the change of the current ratio between the two ends and the lowest current voltage point of the radiation-resistant carbon nanotube transistor (ion gel carbon nanotube field effect transistor) disclosed in the present invention after irradiation with the thickness of the buffer layer.

[0039] Description of Reference Numerals

[0040] 100 Radiation-resistant carbon nanotube transistors

[0041] 101 Radiation-resistant substrate

[0042] 102 Carbon Nanotube Adhesion Layer

[0043] 103 Carbon Nanotube Layer

[0044] 104 Gate dielectric

[0045] 105 Drain

[0046] 106 Source

[0047] 107 Gate

[0048] 108 buffer layer. DETAILED DESCRIPTION

[0049] The present disclosure is further described in detail below in conjunction with the accompanying drawings and implementations. It is understood that the specific implementations described herein are only used to explain the relevant content, rather than to limit the present disclosure. It should also be noted that, for ease of description, only the parts related to the present disclosure are shown in the accompanying drawings.

[0050] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in the present disclosure can be combined with each other. The technical solution of the present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0051] Unless otherwise specified, the exemplary embodiments / embodiments shown will be understood as providing exemplary features of various details of some ways in which the technical concept of the present disclosure can be implemented in practice. Therefore, unless otherwise specified, the features of the various embodiments / embodiments can be combined, separated, interchanged and / or rearranged without departing from the technical concept of the present disclosure.

[0052] The use of cross-hatching and / or shading in the accompanying drawings is generally used to make the boundaries between adjacent components clear. As such, unless otherwise specified, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for the specific materials, material properties, dimensions, proportions, commonalities between the components shown, and / or any other characteristics, attributes, properties, etc. of the components. In addition, in the accompanying drawings, the sizes and relative sizes of the components may be exaggerated for clarity and / or descriptive purposes. When the exemplary embodiments can be implemented differently, the specific process sequence can be performed in a different order than described. For example, two successively described processes can be performed substantially simultaneously or in an order opposite to the described order. In addition, the same figure numbers represent the same components.

[0053] When a component is referred to as being "on" or "over," "connected to," or "coupled to" another component, the component may be directly on, directly connected to, or directly coupled to the other component, or intervening components may be present. However, when a component is referred to as being "directly on," "directly connected to," or "directly coupled to" another component, there are no intervening components. For this purpose, the term "connected" may refer to a physical connection, an electrical connection, etc., with or without intervening components.

[0054] For descriptive purposes, the present disclosure may use spatially relative terms such as "under," "beneath," "under," "down," "over," "upper," "above," "higher," and "side (e.g., in a "sidewall")," to describe the relationship of one component to another (other) component as shown in the accompanying drawings. The spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, components described as "under" or "beneath" other components or features would subsequently be positioned "over" the other components or features. Thus, the exemplary term "under" can encompass both the "above" and "below" orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0055] The terms used here are for the purpose of describing specific embodiments, and are not intended to be restrictive. As used here, unless the context clearly indicates otherwise, the singular forms "one (kind, person)" and "said (the)" are also intended to include plural forms. In addition, when the terms "comprise" and / or "include" and their variations are used in this specification, it is explained that there are stated features, integral bodies, steps, operations, parts, assemblies and / or their groups, but it is not excluded that there are or add one or more other features, integral bodies, steps, operations, parts, assemblies and / or their groups. It should also be noted that, as used here, the terms "substantially", "approximately" and other similar terms are used as approximate terms and not as degree terms, so that they are used to explain the inherent deviations of the measured values, calculated values ​​and / or the values ​​provided that will be recognized by those of ordinary skill in the art.

[0056] Figure 1 is a schematic structural diagram of a radiation-resistant carbon nanotube transistor according to one embodiment of the present disclosure.

[0057] like Figure 1 As shown, the radiation-resistant carbon nanotube transistor 100 includes: a radiation-resistant substrate 101; a carbon nanotube adhesion layer 102, which is formed on the radiation-resistant substrate 101; a carbon nanotube layer 103, which is formed on the carbon nanotube adhesion layer 102 and serves as a channel; and a gate dielectric 104, which is a polymer ionic liquid gel formed on at least a portion of the carbon nanotube layer 103.

[0058] Since polymer ionic liquid gel can form a nanoscale double layer effect on the channel surface, it can effectively reduce the generation of gate dielectric trap charges.

[0059] The radiation-resistant carbon nanotube transistor disclosed in the present invention may be referred to as an ion gel carbon nanotube transistor, and the polymer ion liquid gel may be referred to as an ion gel for short.

[0060] It should be noted that Figure 1 The sizes and shapes of the various parts are merely exemplary and do not limit the radiation-resistant carbon nanotube transistor of this embodiment or the radiation-resistant carbon nanotube transistor of the present disclosure.

[0061] Among them, the polymer ion liquid gel used as the gate dielectric 104 can be formed by aerosol inkjet printing, which will form a double layer effect on the surface of the carbon nanotube layer 103. On the one hand, as a gate dielectric, it provides ultra-high gate efficiency for the carbon nanotube transistor. On the other hand, since the thickness of the double layer is very thin and belongs to the nanoscale, the captured radiation trap charge is small, which improves the radiation resistance of the carbon nanotube transistor.

[0062] Figure 4 Schematic diagram showing the formation of a double layer effect in a polymer ionic liquid gel (negative gate bias on the upper surface).

[0063] Preferably, the radiation-resistant substrate 101 of the radiation-resistant carbon nanotube transistor 100 of this embodiment is a thin film insulating material.

[0064] Since thin film insulating material is used as the substrate, high-energy irradiated particles can pass through the substrate, avoiding secondary radiation damage reflected by the substrate and further improving the radiation resistance of the carbon nanotube transistor.

[0065] More preferably, the thin film insulating material is a polyimide (PI) film, a polyethylene terephthalate (PET) film or a polyethylene naphthalate (PEN) film. These thin film insulating materials have the characteristics of thin thickness and loose structure, are not easy to generate trapped charges, and the radiation rays will completely pass through the substrate, the reflection effect is small, and the secondary radiation effect caused by the reflection of the radiation rays is reduced. It should be understood by those skilled in the art that the thin film insulating material disclosed in the present invention can also use thin films with thin thickness and loose structure other than polyimide (PI) film, polyethylene terephthalate (PET) film, and polyethylene naphthalate (PEN) film.

[0066] The transfer characteristics of the radiation-resistant carbon nanotube transistor (P-type ion gel carbon nanotube field effect transistor) prepared according to this embodiment are as follows: Figure 5 shown.

[0067] In the initial state (i.e. before being irradiated), the subthreshold swing threshold (SS) of the P-type ion gel carbon nanotube field effect transistor is 100mV / dec ( Figure 5The A curve in the figure proves that the ion-gel gate dielectric can provide good gate control capability.

[0068] After irradiating the ion gel carbon nanotube field effect transistor with a dose rate of 560 rad(Si) / s and a total irradiation of 4 Mrad(Si), the transfer characteristics of the device are as follows: Figure 5 As shown in curve B.

[0069] A high irradiation dose rate is used to simulate extreme irradiation conditions, shorten the irradiation and measurement time, and avoid the influence of the fading of the irradiation effect over time. The experimental results show that after the new field effect transistor disclosed in the present invention is subjected to 4Mrad irradiation, except for a slight subthreshold swing decay and a small drift of the threshold voltage, the device can still work normally, which is a new record for the radiation resistance of carbon nanotube top-gate field effect transistors.

[0070] Preferably, the carbon nanotube adhesion layer 102 of the radiation-resistant carbon nanotube transistor of this embodiment is made of hafnium oxide, aluminum oxide, silicon oxide, or zirconium oxide. Preferably, the thickness of the carbon nanotube adhesion layer 102 is about 5 nm.

[0071] Figure 2 is a schematic structural diagram of a radiation-resistant carbon nanotube transistor according to another embodiment of the present disclosure.

[0072] like Figure 2 As shown, the radiation-resistant carbon nanotube transistor 100 includes: a radiation-resistant substrate 101; a carbon nanotube adhesion layer 102, which is formed on the radiation-resistant substrate 101; a carbon nanotube layer 103, which is formed on the carbon nanotube adhesion layer 102, and the carbon nanotube layer 103 serves as a channel; a gate dielectric 104, which is a polymer ion liquid gel formed on at least a portion of the carbon nanotube layer 103; and a buffer layer 108 formed at least between the contact interface between the carbon nanotube layer 103 and the polymer ion liquid gel.

[0073] It should be noted that Figure 2 The sizes and shapes of the various parts are merely exemplary and do not limit the radiation-resistant carbon nanotube transistor of this embodiment or the radiation-resistant carbon nanotube transistor of the present disclosure.

[0074] Figure 3 is a schematic structural diagram of a radiation-resistant carbon nanotube transistor according to another embodiment of the present disclosure.

[0075] like Figure 3 As shown, the buffer layer 108 of the radiation-resistant carbon nanotube transistor 100 is disposed in an area relative to Figure 2 The buffer layer 108 of the radiation-resistant carbon nanotube transistor 100 shown in FIG. 1 is disposed in a larger area.

[0076] By setting the buffer layer 108, the ionic gel carbon nanotube transistor can have a typical bipolarity, and its minimum current point is at V gs = 0V, indicating that it can be used as both an enhanced N-type and P-type field effect transistor to construct a CMOS-like integrated circuit. The polarity of the transistor can be adjusted by adjusting the thickness of the buffer layer.

[0077] In order to adjust the threshold of the ionic gel carbon nanotube field effect transistor, a buffer layer 108 is formed at least between the contact interface of the polymer ionic liquid gel and the carbon nanotube layer 103 to adjust the Vmin of the ionic gel carbon nanotube field effect transistor (Vmin is the voltage at the minimum current point in the transfer curve of the ionic gel carbon nanotube field effect transistor). Atomic layer deposition technology (ALD) can be used to grow a certain thickness of aluminum oxide or hafnium oxide as a buffer layer.

[0078] In this embodiment, Figures 6 to 9 The transfer characteristic curves of radiation-resistant carbon nanotube transistors (P-type ionic gel carbon nanotube field effect transistors) with buffer layers of different thicknesses are shown.

[0079] The following description will be made by taking aluminum oxide as a buffer layer as an example. Figures 6 to 9 In the embodiment, the thickness of the aluminum oxide buffer layer is 5 nm, 10 nm, 15 nm and 20 nm respectively.

[0080] Combination Figure 5 (no buffer layer is provided, i.e. the thickness of the aluminum oxide buffer layer is 0) and Figures 6 to 9 As the thickness of the aluminum oxide buffer layer increases from 0 to 20 nm, the Vmin of the ionic gel carbon nanotube field effect transistor prepared by aerogel inkjet printing shifts to the left (from 0.6 V to 0.2 V), and the ratio of the left and right on-state currents of the field effect transistor approaches 1, indicating that the bipolarity of the device gradually becomes obvious.

[0081] Comparison before and after irradiation ( Figures 5 to 9 The A curve is before irradiation, and the B curve is after irradiation) The transfer characteristics of the ionic gel carbon nanotube field effect transistor, Fig.10 The figure shows the change of the current ratio and the lowest current voltage point of the ion gel carbon nanotube field effect tube after irradiation with the thickness of the buffer layer. Fig.10 It can be seen that the Vmin and bipolarity of the ion gel carbon nanotube field effect transistor (radiation-resistant carbon nanotube transistor) do not change significantly after being irradiated with 4 Mrad (Si), indicating that the introduction of the buffer layer does not lose the radiation-resistant performance of the ion gel carbon nanotube transistor.

[0082] The present invention redesigns the structure of carbon nanotube transistors and selects gate dielectric and substrate materials, and the radiation resistance of ion gel carbon nanotube transistors and integrated circuits made of ion gel carbon nanotube transistors is significantly improved. Under the condition of irradiation dose rate of 560rad / s, the circuit can still work normally after irradiation of 4Mrad(Si). The total radiation dose of 4Mrad(Si) is equivalent to the total radiation dose of space to the device for about 10 years.

[0083] Moreover, since the radiation-resistant carbon nanotube transistor disclosed in the present invention uses an ion glue gate medium, the ion glue is a quasi-liquid substance, and its radiation damage is easier to repair. Through annealing at a certain temperature, the internal fluidity of the ion glue is enhanced, and the positive and negative ions are easier to flow, which promotes the dissipation of the trapped charges induced by radiation, and at the same time makes the ion glue double layer reach balance again. This characteristic enables the ion glue to achieve radiation damage repair under milder annealing conditions.

[0084] In the above embodiment, preferably, the buffer layer 108 of the radiation-resistant carbon nanotube transistor 100 is aluminum oxide.

[0085] According to a preferred embodiment of the present disclosure, the radiation-resistant carbon nanotube transistor 100 further includes a gate 107, a source 106 and a drain 105. The source 106 and the drain 105 adopt an interdigitated electrode structure to increase the width of the device and further enhance the radiation resistance stability of the radiation-resistant carbon nanotube transistor.

[0086] For example, 5nm hafnium oxide or aluminum oxide, silicon oxide, zirconium oxide is deposited using ALD on a flexible polyimide (PI) substrate as an inkjet-printed carbon nanotube adhesion layer, ion glue is used as a gate dielectric, gold (Au) is used as a contact electrode, and aerosol inkjet-printed silver (Ag) is used as a side gate electrode.

[0087] According to an embodiment of the present disclosure, a method for manufacturing a radiation-resistant carbon nanotube transistor includes: providing a radiation-resistant substrate 101; forming a carbon nanotube adhesion layer 102 on the radiation-resistant substrate; forming a carbon nanotube layer 103 as a channel material on the carbon nanotube adhesion layer 102; and forming a polymer ionic liquid gel as a gate dielectric 104 on at least a portion of the carbon nanotube layer 103.

[0088] According to another embodiment of the present disclosure, a method for manufacturing a radiation-resistant carbon nanotube transistor includes: providing a radiation-resistant substrate 101; forming a carbon nanotube adhesion layer 102 on the radiation-resistant substrate; forming a carbon nanotube layer 103 as a channel material on the carbon nanotube adhesion layer 102; forming a buffer layer 108 on at least a portion of the carbon nanotube layer 103; and forming a polymer ionic liquid gel as a gate dielectric 104 on at least the buffer layer 108.

[0089] In the method for manufacturing the radiation-resistant carbon nanotube transistor of the above embodiment, the radiation-resistant substrate is a thin film insulating material.

[0090] Preferably, the thin film insulating material is a polyimide (PI) film, a polyethylene terephthalate (PET) film, or a polyethylene naphthalate (PEN) film.

[0091] Preferably, in the method for manufacturing the radiation-resistant carbon nanotube transistor disclosed in the present invention, the carbon nanotube adhesion layer is formed by depositing hafnium oxide, aluminum oxide, silicon oxide, or zirconium oxide on the radiation-resistant substrate.

[0092] Preferably, in the method for manufacturing radiation-resistant carbon nanotube transistors disclosed herein, polymer ionic liquid gel ink is prepared by copolymer, ionic liquid and organic solvent, and the polymer ionic liquid gel ink is inkjetted on at least a portion of the carbon nanotube layer 103 to form a polymer ionic liquid gel.

[0093] For example, the diblock copolymer PS-PMMA, the ionic liquid [EMIM][TFSI] and ethyl acetate are mixed and stirred to prepare the ionic gel printing ink. The copolymer PS-PMMA, the ionic liquid [EMIM][TFSI] and ethyl acetate are mixed in a certain weight ratio and rotated and stirred at room temperature to obtain the ionic gel ink for aerosol inkjet printing.

[0094] In the method for manufacturing the radiation-resistant carbon nanotube transistor disclosed in the present invention, the copolymer is preferably PS-PMMA, PS-PMMA-PS, PS-PEO-PS, P(VDF-HFP), PEG-DA or SOS-N3.

[0095] In the method for manufacturing radiation-resistant carbon nanotube transistors disclosed in the present invention, the ionic liquid is preferably [EMIM]-[TFSI], [EMIM]-[Tf2N], [EMI]-[TCB], [DEME]-[TFSI], [EMIM]-[OctOSO3] or [BMIM]-[PF6].

[0096] In the method for manufacturing the radiation-resistant carbon nanotube transistor disclosed in the present invention, the organic solvent is preferably ethyl acetate.

[0097] An integrated circuit system according to an embodiment of the present disclosure includes the radiation-resistant carbon nanotube transistor of any one of the above embodiments or a radiation-resistant carbon nanotube transistor manufactured by the method for manufacturing the radiation-resistant carbon nanotube transistor of any one of the above embodiments.

[0098] In the description of this specification, the description with reference to the terms "one embodiment / method", "some embodiments / methods", "example", "specific example" or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment / method or example are included in at least one embodiment / method or example of the present disclosure. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment / method or example. Moreover, the specific features, structures, materials or characteristics described may be combined in a suitable manner in any one or more embodiments / methods or examples. In addition, those skilled in the art may combine and combine the different embodiments / methods or examples described in this specification and the features of the different embodiments / methods or examples, unless they are contradictory.

[0099] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present disclosure, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0100] Those skilled in the art should understand that the above embodiments are only for the purpose of clearly illustrating the present disclosure, and are not intended to limit the scope of the present disclosure. For those skilled in the art, other changes or modifications may be made based on the above disclosure, and these changes or modifications are still within the scope of the present disclosure.

Claims

1. A radiation-resistant carbon nanotube transistor, characterized in that: include: A radiation-resistant substrate, which is a thin-film insulating material that allows high-energy irradiated particles to pass through the radiation-resistant substrate; a carbon nanotube adhesion layer, the carbon nanotube adhesion layer being formed on the radiation-resistant substrate; a carbon nanotube layer, the carbon nanotube layer being formed on the carbon nanotube adhesion layer, the carbon nanotube layer serving as a channel; as well as A gate dielectric, wherein the gate dielectric is a polymer ionic liquid gel formed on at least a portion of the carbon nanotube layer, the polymer ionic liquid gel forms a double electric layer on the carbon nanotube layer, and the thickness of the double electric layer is nanometer scale, A buffer layer is formed between the contact interface of the carbon nanotube layer and the polymer ionic liquid gel, and the buffer layer is used to adjust the voltage at the minimum current point in the transfer curve of the radiation-resistant carbon nanotube transistor. The buffer layer is aluminum oxide or hafnium oxide.

2. The radiation-resistant carbon nanotube transistor according to claim 1, characterized in that: The film insulating material is a polyimide (PI) film, a polyethylene terephthalate (PET) film, or a polyethylene naphthalate (PEN) film.

3. The radiation-resistant carbon nanotube transistor according to claim 1, characterized in that: The carbon nanotube adhesion layer is made of hafnium oxide, aluminum oxide, silicon oxide, or zirconium oxide.

4. The radiation-resistant carbon nanotube transistor according to claim 1, characterized in that: The thickness of the buffer layer is less than 20 nm.

5. The radiation-resistant carbon nanotube transistor according to claim 1, characterized in that: The thickness of the carbon nanotube adhesion layer is about 5 nm.

6. The radiation-resistant carbon nanotube transistor according to claim 1, characterized in that: It also includes a gate, a source and a drain, wherein the source and the drain adopt an interdigitated electrode structure.

7. A method for manufacturing a radiation-resistant carbon nanotube transistor according to any one of claims 1 to 6, characterized in that: include: Providing a radiation resistant substrate; forming a carbon nanotube adhesion layer on the radiation-resistant substrate; forming a carbon nanotube layer as a channel material on the carbon nanotube adhesion layer; as well as A polymer ionic liquid gel is formed on at least a portion of the carbon nanotube layer as a gate dielectric.

8. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 7, characterized in that: The carbon nanotube adhesion layer is formed by depositing hafnium oxide, aluminum oxide, silicon oxide or zirconium oxide on the radiation-resistant substrate.

9. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 7, characterized in that: A polymer ionic liquid gel ink is prepared by using a copolymer, an ionic liquid and an organic solvent, and the polymer ionic liquid gel ink is inkjetted on at least a portion of the carbon nanotube layer to form the polymer ionic liquid gel.

10. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 9, characterized in that: The copolymer is PS-PMMA, PS-PMMA-PS, PS-PEO-PS, P(VDF-HFP), PEG-DA or SOS-N3.

11. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 9, characterized in that: The ionic liquid is [EMIM]-[TFSI], [EMIM]-[Tf2N], [EMI]-[TCB], [DEME]-[TFSI], [EMIM]-[OctOSO3] or [BMIM]-[PF6].

12. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 9, characterized in that: The organic solvent is ethyl acetate.

13. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 7, characterized in that: Before forming the polymer ionic liquid gel on at least a portion of the carbon nanotube layer, a buffer layer is formed at least between a contact interface between the carbon nanotube layer and the polymer ionic liquid gel.

14. The method for manufacturing a radiation-resistant carbon nanotube transistor according to claim 13, characterized in that: The buffer layer is aluminum oxide or hafnium oxide.

15. An integrated circuit system, characterized in that: A radiation-resistant carbon nanotube transistor comprising the radiation-resistant carbon nanotube transistor according to any one of claims 1 to 6 or a radiation-resistant carbon nanotube transistor manufactured by the manufacturing method according to any one of claims 7 to 14.

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