Device for chip bonding

Abstract

The present application discloses a device for chip bonding, which includes: a carrier, on which a plurality of bearing areas are provided, and the bearing areas are at least used to fix the substrate of the chip to be bonded; a plurality of heating mechanisms, which are located below the carrier and correspond one-to-one with the bearing areas, each heating mechanism includes a heating element and a plurality of heat-conducting elements provided on the heating element, and the carrier is also provided with a channel connected to the bearing area, the heat-conducting element is passed through the channel and one end of the heat-conducting element protrudes from the plane where the bearing area is located or is flush with the plane where the bearing area is located; when the substrate is fixed on the bearing area, the heat-conducting element corresponds one-to-one with the conductive connecting line in the substrate and abuts against it. Heat transfer occurs between the heat-conducting element of the heating mechanism of the present application and a specific part of the substrate, and the two are in local contact. The heat transfer efficiency between the two is high, and other parts of the substrate are not affected, thereby avoiding warping of the substrate.

Description

Technical Field

[0001] The present invention generally relates to the field of chip manufacturing technology, and in particular to a device for chip bonding. Background Art

[0002] Flip-chip bonding usually uses mass reflow technology or thermal compression bonding technology for chip packaging.

[0003] Reflow soldering technology is not suitable for large-size chips. However, due to the high ambient temperature provided by reflow soldering technology, it is easy to cause chip or substrate warping when achieving electrical connection between the chip and the substrate, and then there will be problems such as solder bridging and cold soldering. Hot compression bonding technology can avoid problems such as solder bridging and cold soldering, but it is limited by the patch format and can only achieve a one-at-a-time mounting efficiency. Summary of the Invention

[0004] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a device for chip bonding.

[0005] The present application provides a device for chip bonding, comprising:

[0006] A carrier having a plurality of carrying areas provided thereon, wherein the carrying areas are at least used to fix the substrate to which the chip to be bonded is attached;

[0007] Several heating mechanisms are located below the carrier and correspond to the carrier areas one by one. Each heating mechanism includes a heating element and several heat conducting elements arranged on the heating element.

[0008] The carrier is further provided with a channel communicating with the carrier area, the heat conducting member is passed through the channel, and one end of the heat conducting member protrudes from the plane where the carrier area is located or is flush with the plane where the carrier area is located;

[0009] When the substrate is fixed on the carrying area, the heat conducting members correspond to the conductive connecting lines in the substrate one by one and abut against each other.

[0010] As an optional solution, the bearing area is a groove.

[0011] As an optional solution, the axis of the channel extends in a vertical direction or in a direction with a preset angle to the vertical direction.

[0012] As an optional solution, the heat conducting member is columnar, and its cross-sectional diameter is adapted to the cross-sectional diameter of the channel. The heat conducting member is perpendicular to the heating member or is arranged at a preset angle to the heating member.

[0013] As an optional solution, the orthographic projection of the heat conducting member on the conductive connecting line partially covers the conductive connecting line.

[0014] As an optional solution, a pressing mechanism is further included, wherein the pressing mechanism is arranged on one side of the carrier, and the heating mechanism is arranged on the other side of the carrier.

[0015] As an optional solution, the pressing mechanism includes a pressing block and a ball screw mechanism, and the ball screw mechanism is arranged in a vertical direction, and the ball screw mechanism drives the pressing block to approach and move away from the substrate.

[0016] As an optional solution, the pressing block includes a heating module, and the heating module is used to adjust the temperature of the pressing block.

[0017] As an optional solution, it further includes a telescopic mechanism connected to the heating mechanism, and the telescopic mechanism drives the heating mechanism to reciprocate in the vertical direction.

[0018] As an optional solution, the telescopic mechanism is an electric push rod.

[0019] The heat transfer between the heat-conducting element of the heating mechanism and a specific part of the substrate occurs, creating localized contact and high heat transfer efficiency. This does not affect other parts of the substrate and prevents substrate warping. Furthermore, multiple heating mechanisms correspond to multiple load-bearing areas, improving placement efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Other features, objects and advantages of the present application will become more apparent upon reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0021] Figure 1 A schematic diagram of the structure of a semiconductor component provided by an embodiment of the present invention Figure 1 ;

[0022] Figure 2 A schematic diagram of the structure of a semiconductor component provided by an embodiment of the present invention Figure 2 ;

[0023] Figures 3 to 8 is a schematic diagram of a method for manufacturing a semiconductor component provided by an embodiment of the present invention;

[0024] Figure 9 A schematic diagram of a device for chip bonding provided by an embodiment of the present invention Figure 1 ;

[0025] Figure 10 A schematic diagram of a device for chip bonding provided by an embodiment of the present invention Figure 2 ;

[0026] Figure 11 This is a schematic diagram of a device for chip bonding provided by an embodiment of the present invention. Figure 3 . DETAILED DESCRIPTION

[0027] The present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely for the purpose of explaining the relevant invention and are not intended to limit the invention. It should also be noted that, for ease of description, only portions relevant to the invention are shown in the accompanying drawings.

[0028] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0029] The terms used in the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. As used in the present invention and the appended claims, the singular forms "a," "the," and "an" are intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0030] Figure 1 A schematic structural diagram of a semiconductor component is shown.

[0031] like Figure 1 As shown, a semiconductor component includes a substrate 20 and at least two chips 10 . The chips 10 may be stacked. The stacked chips 10 are disposed on the substrate 20 .

[0032] Each chip 10 includes a first surface 101 facing away from the substrate 20 and a second surface 102 facing the substrate 20. The first surface 101 is provided with a plurality of receiving grooves 11 recessed toward the substrate 20. One side of the second surface 102 is provided with a plurality of welding parts 30, and the welding parts 30 correspond one-to-one to the receiving grooves 11. Between any two adjacent chips 10, the welding parts 30 of the upper chip 10 are welded in the receiving grooves 11 of the lower chip 10 to electrically connect the two chips 10.

[0033] It should be noted that substrate 20 provides electrical connection and support for chip 10. A circuit layer is arranged on substrate 20, which includes a plurality of conductive connecting wires 21. Solder 30 can be made of indium, copper, nickel, tin, or other suitable materials. Solder 30 can be spherical, block-shaped, or in other suitable shapes. Solder 30 can be transformed from a solid state to a molten state at a predetermined temperature.

[0034] The first surface 101 is provided with a plurality of receiving grooves 11 recessed toward the substrate 20, and the plurality of receiving grooves 11 can be arranged at equal intervals M1 along the first direction, and the first direction is perpendicular to the stacking direction of the chip 10. Correspondingly, a plurality of welding parts 30 are provided on one side of the second surface 102, and the plurality of welding parts 30 are arranged at equal intervals M2 along the first direction. The spacing M1 and the spacing M2 are equal, and the welding parts 30 of the upper chip 10 are directly opposite to the receiving grooves 11 of the lower chip 10, and the welding parts 30 can be located in the receiving grooves 11. The welding parts 30 are welded in the receiving grooves 11 so that the molten welding parts 30 can be filled in the receiving grooves 11, avoiding bridging of two adjacent welding parts 30. After the welding parts 30 solidify, the two chips 10 are fixedly connected and electrically connected.

[0035] Of course, in other embodiments of the present invention, the plurality of accommodating grooves 11 may also be arranged at unequal intervals along the first direction, and correspondingly, the plurality of welding parts 30 may also be arranged at unequal intervals along the first direction. It is sufficient that the accommodating grooves 11 and the welding parts 30 correspond one to one.

[0036] In the related art, a plurality of welding members 30 are arranged at equal intervals between two adjacent chips 10 . Under a preset temperature, there is a bridging problem between the two adjacent welding members 30 .

[0037] Based on this, the present application proposes the above-mentioned semiconductor component, which provides a receiving groove 11 on the chip 10, and the molten solder 30 is filled in the receiving groove 11, thereby reducing or avoiding the overflow of the molten solder 30 and reducing the risk of bridging between two adjacent solders 30.

[0038] As an implementable manner, the semiconductor assembly further includes a plurality of conductive members 40, each corresponding to each soldering member 30. The soldering member 30 is disposed on one side of the second surface 102 through the conductive members 40. The conductive members 40 electrically connect two adjacent chips 10.

[0039] It should be noted that the material of the conductive part 40 can be copper material, nickel material, tin material or other suitable materials. The melting point of the conductive part 40 is higher than the melting point of the welding part 30. At the preset temperature, the welding part 30 is in a molten state, while the shape of the conductive part 40 remains unchanged.

[0040] In a specific embodiment, the chip 10 is further provided with a through hole 12, which can be linear or curved. One end of the through hole 12 is connected to the receiving groove 11, and the other end is located on the second surface 102 of the chip 10. At least a portion of the conductive member 40 is disposed in the through hole 12, that is, the shape of the conductive member 40 matches the through hole 12, so that the conductive member 40 can be inserted into the through hole 12. The soldering member 30 is disposed on one side of the second surface 102 through the conductive member 40. If the lower end of the conductive member 40 is flush with the second surface 102, the soldering member 30 is connected to the lower end of the conductive member 40, and the soldering member 30 is equivalent to being directly connected to the second surface 102. If the lower end of the conductive member 40 protrudes from the second surface 102, the soldering member 30 is connected to the lower end of the conductive member 40, and the lower end of the soldering member 30 is a certain distance away from the second surface 102.

[0041] In some embodiments, the end of the conductive member 40 connected to the welding member 30 protrudes from the through hole 12 corresponding to the conductive member 40 .

[0042] It should be noted that one accommodating groove 11 corresponds to one soldering member 30 and one conductive member 40, and the lower end of the conductive member 40 (the end where the conductive member 40 connects to the soldering member 30) protrudes from the opening of the through hole 12 on the second surface 102. That is, there is a distance d1 between the lower end of the conductive member 40 (the end where the conductive member 40 connects to the soldering member 30) and the second surface 102. The above-mentioned through hole 12 is the through hole 12 connected to the conductive member 40, not the through hole 12 located on the chip above (below) the conductive member 40.

[0043] The 2.5D / 3D packaging method has higher requirements for the heat dissipation of the chip 10 . Increasing the airflow by the distance d1 is beneficial to the heat dissipation of the chip 10 .

[0044] In some embodiments, the other end of the conductive member 40 is flush with the bottom of the receiving groove 11 corresponding to the conductive member 40, ensuring sufficient space in the receiving groove 11, which is conducive to the molten welding member 30 filling the receiving groove 11 and preventing the molten welding member 30 from overflowing from the receiving groove 11.

[0045] It should be noted that the other end of the conductive member 40 is the upper end of the conductive member 40. The above-mentioned through hole 12 is the through hole 12 connected to the conductive member 40, not the through hole 12 located on the chip above (below) the conductive member 40.

[0046] As an implementable manner, a conductive layer 50 is provided on the inner wall of the accommodating groove 11 , and the conductive layer 50 is connected to the conductive member 40 .

[0047] It should be noted that the conductive layer 50 is made of the same material as the conductive member 40 and is applied to the inner wall of the receiving groove 11 by vapor deposition. The conductive layer 50 is connected to the conductive member 40. The provision of the conductive layer 50 increases the contact area between the conductive member 40 and the welding member 30, thereby facilitating stable information transmission between the conductive member 40 and the welding member 30.

[0048] As an achievable manner, the soldering piece 30 of the upper chip is positionally matched with the receiving groove 11 of the lower chip.

[0049] In a specific embodiment, the position-limiting fit means that the soldering member 30 is inserted into the receiving groove 11, and part or all of the soldering member 30 is located in the receiving groove 11. Before two adjacent chips 10 are connected, the soldering member 30 is located in the receiving groove 11, which constrains the horizontal movement of the two chips 10 and prevents the two adjacent chips 10 from shifting.

[0050] Furthermore, the soldering part 30 of the upper chip is located in the receiving groove 11 of the lower chip, and the highest point of the soldering part 30 is lower than or flush with the opening of the receiving groove 11, which is conducive to the molten soldering part 30 being completely accommodated in the receiving groove 11.

[0051] As a feasible approach, the opening of the accommodating groove 11 is in a flared shape.

[0052] It should be noted that the cross-section of the opening of the accommodating groove 11 is larger than the cross-section of the bottom of the accommodating groove 11, which increases the space of the accommodating groove 11 so as to fill more molten solder parts 30 so that the molten solder parts 30 will not overflow from the accommodating groove 11; in addition, the depth of the accommodating groove 11 is reduced to avoid affecting the rigidity and strength of the chip 10.

[0053] In this embodiment, there are multiple accommodating grooves 11. Preferably, the accommodating grooves 11 are arranged at equal intervals d2, with a gap between two adjacent accommodating grooves, which helps to avoid bridging between two adjacent welded parts 30. In some embodiments, the accommodating grooves 11 can also be arranged at unequal intervals.

[0054] Figures 3 to 8 A schematic diagram of a method for manufacturing a semiconductor component is shown.

[0055] The method for manufacturing the semiconductor component comprises the following steps:

[0056] S1, providing a wafer, the wafer comprising a chip layer 10a and a grinding layer 10b, a receiving groove 11 being formed on a surface of the chip layer 10a facing away from the grinding layer 10b, and an opening of the receiving groove 11 being flared;

[0057] It should be noted that the through silicon via technology is used to open the accommodating groove 11 on the surface of the chip layer 10a facing away from the polishing layer 10b. The longitudinal section of the accommodating groove 11 is a triangle, trapezoid, semicircle or semi-ellipse or other suitable shapes, such as Figure 3 As shown, the longitudinal section of the receiving groove 11 is triangular, wherein the thickness of the chip layer 10a is L1, the thickness of the grinding layer 10b is L2, and the depth L3 of the receiving groove 11 is smaller than the depth L1 of the chip layer 10a.

[0058] S2, the accommodating groove 11 defines a blind hole 12a extending from the bottom thereof toward the polishing layer 10b. The blind hole 12a penetrates the chip layer 10a and ends at the polishing layer 10b.

[0059] It should be noted that the sum of the depths of the accommodating groove 11 and the blind hole 12 a is L1.

[0060] S3, laying a passivation layer 60 on the surface of the chip layer 10a facing away from the grinding layer 10b;

[0061] It should be noted that a passivation layer 60 may be formed on the surface of the chip layer 10a facing away from the polishing layer 10b by vapor deposition to protect the surface of the chip layer 10a facing away from the polishing layer 10b and facilitate formation of the conductive member 40 in subsequent processes.

[0062] S4, a conductive layer 50 is laid on the inner wall of the accommodating groove 11 and a conductive member 40 is formed in the blind hole 12a;

[0063] It should be noted that the conductive layer 50 can be formed on the inner wall of the receiving groove 11 by vapor deposition, and the conductive member 40 can be formed in the blind hole 12a. The conductive member 40 and the conductive layer 50 are made of the same material and connected to the conductive layer 50.

[0064] S5, grinding the grinding layer 10b until the grinding layer 10b disappears;

[0065] It should be noted that the wafer is turned upside down and ground by a grinding device until the thickness L2 of the grinding layer 10b is reduced to zero.

[0066] S6 , removing the passivation layer 60 , and connecting the welding member 30 to the lower end portion of the conductive member 40 .

[0067] It should be noted that, after the passivation layer 60 is removed, the soldering member 30 corresponds to the conductive member 40 one by one, and the soldering member 30 is connected to the lower end of the conductive member 40 . At this time, the chip layer 10 a can be called a chip 10 .

[0068] Between steps S5 and S6, the length of the conductive member 40 can be extended so that the lower end of the conductive member 40 protrudes from the surface of the chip layer 10a facing the grinding layer 10b. At this time, there is a distance d1 between the lower end of the soldering member 30 and the surface of the chip layer 10a facing the grinding layer 10b.

[0069] Figure 9 A schematic structural diagram of a device for chip bonding is shown.

[0070] like Figure 9 As shown, the device for chip bonding includes a carrier 70 and a plurality of heating mechanisms 80. The heating mechanisms 80 are located below the carrier 70.

[0071] The carrier 70 is provided with a plurality of carrying areas 71 , which are at least used to fix the substrate to which the chip to be bonded is bonded; the heating mechanism 80 is provided on one side of the carrier 70 , and the heating mechanism 80 corresponds to the carrying area 71 one by one.

[0072] The heating mechanism 80 includes a plurality of heat conducting members 82, which correspond one-to-one to and abut against the conductive connecting lines 21 of the substrate. The heat conducting members 82 transfer heat to the substrate, so that heat conduction occurs between the substrate and the chip, thereby completing the electrical connection between the substrate and the chip. The substrate and the chip form a semiconductor component.

[0073] It should be noted that the bearing area 71 can be a groove structure, a planar structure or other suitable structure. The bearing area 71 is used to fix the semiconductor component or substrate to facilitate heat transfer between the semiconductor component or substrate and the heating mechanism 80. The conductive connecting line 21 of the substrate has good electrical conductivity and good thermal conductivity. Heat transfer occurs between the heat conducting part 82 of the heating mechanism 80 and a specific part of the substrate. The two are in local contact, and the heat transfer efficiency between the two is high, which does not affect other parts of the substrate and avoids warping of the substrate. In addition, several heating mechanisms 80 correspond to several bearing areas, which improves the mounting efficiency.

[0074] In related technologies, reflow soldering technology is used to deal with large-size chips 10. Since the ambient temperature provided by reflow soldering technology is too high, when realizing the electrical connection between the chip 10 and the substrate 20, it is easy to cause the chip 10 or the substrate 20 to warp, and then there will be problems such as solder joint bridging and cold solder joints; hot compression bonding technology can avoid problems such as solder joint bridging and cold solder joints, but is limited by the patch form and can only achieve a one-at-a-time mounting efficiency.

[0075] Based on this, this application proposes a device for chip bonding. Heat transfer occurs between the heat conductor 82 of a heating mechanism 80 and a specific portion of a substrate. This creates localized contact and high heat transfer efficiency, without affecting other portions of the substrate and preventing substrate warping. Furthermore, multiple heating mechanisms 80 correspond to multiple loading zones, improving placement efficiency.

[0076] As a feasible method, the supporting area 71 is a groove, and the supporting member 70 is recessed into the supporting member 70 from its supporting surface, and the groove is engaged with the substrate (semiconductor component) so that the groove is fixedly connected to the substrate (semiconductor component) to prevent the substrate (semiconductor component) from shaking.

[0077] As a feasible approach, the carrier 70 is further provided with a channel 72 communicating with the carrier area 71 , and the heat conducting member 82 is disposed in the channel 72 .

[0078] refer to Figure 9 In a specific embodiment, a channel 72 is opened on the bottom of the bearing area 71, and the channel 72 passes through the bearing member 70. The axis of the channel 72 can be along the vertical direction, or the axis of the channel 72 can be inclined to form a preset angle with the vertical direction.

[0079] The heating mechanism 80 includes a heating element 81 and a heat conductive element 82 connected to the heating element 81. The heat conductive element 82 is roughly columnar, that is, the cross-sectional diameter of the heat conductive element 82 is adapted to the cross-sectional diameter of the channel 72. The heat conductive element 82 is perpendicular to the heating element 81 or is arranged at a preset angle to the heating element 81, that is, when the axis of the channel 72 extends in the vertical direction, the heat conductive element 82 is perpendicular to the heating element 81. When the axis of the channel 72 extends in the vertical direction at a preset angle, the heat conductive element 82 is arranged at a preset angle to the heating element 81, that is, the heat conductive element 82 is adapted to the channel 72, that is, the heat conductive element 82 can pass through the channel 72, and the heat conductive element 82 is in contact with the conductive connecting line 21 of the substrate to achieve heat conduction coordination between the two.

[0080] One end of the heat conducting member 82 protrudes from or is flush with the bottom of the bearing area. Figure 9 In an embodiment of the present invention, the upper end of the heat conductor 82 is flush with the bottom of the groove, which is conducive to the upper end of the heat conductor 82 and the conductive connecting line 21 of the substrate being able to be in stable contact; or, the upper end of the heat conductor 82 protrudes from the bottom of the groove, which is further conducive to the upper end of the heat conductor 82 and the conductive connecting line 21 of the substrate being able to be in stable contact.

[0081] As a feasible method, the positive projection of the heat conductor 82 on the conductive connecting line 21 partially covers the conductive connecting line 21, ensuring that the contact area between the heat conductor 82 and the conductive connecting line 21 is large enough, which is conducive to the stable contact between the heat conductor 82 and the conductive connecting line 21 of the substrate and improves the heat conduction efficiency between the two.

[0082] As an implementable manner, the device for chip bonding further includes a pressing mechanism 90 for press-fitting with the semiconductor component.

[0083] refer to Figure 10 and Figure 11It should be noted that the semiconductor assembly includes a substrate 20 and a plurality of chips 10, which are stacked and placed on the substrate 20. A pressing mechanism 90 is located on one side of the carrier 70, specifically above the carrier area 71. The heating mechanism 80 is located below the carrier 70. When the heating mechanism 80 cooperates with the semiconductor assembly for heat conduction, the pressing mechanism 90 applies force to the stacked chips 10, preventing warping of the chips 10.

[0084] In practice, the pressing mechanism 90 comprises a pressure block 91 and a ball screw mechanism. The ball screw mechanism is arranged vertically and comprises a ball screw and a nut that slides with the ball screw. The pressure block 91 is connected to the nut. The nut slides along the length of the ball screw, driving the pressure block 91 toward or away from the support 70, thereby applying a force to the semiconductor component. The precision of the ball screw mechanism controls the timing and magnitude of the applied force. The applied force can range from 0 kgf to 10 kgf.

[0085] Furthermore, the pressing block 91 includes a heating module for adjusting the temperature of the pressing block 91. The temperature of the pressing block 91 is higher than that of the chip 10. The pressing block 91 conducts heat to the chip 10 to increase the temperature of the chip 10, thereby shortening the working time of the heating mechanism 80.

[0086] As an implementable manner, the device for chip bonding further includes a telescopic mechanism connected to the heating mechanism 80 , and the telescopic mechanism drives the heating mechanism 80 to reciprocate in the vertical direction.

[0087] refer to Figure 10 It should be noted that the telescopic mechanism is connected to the heating element 81 of the heating mechanism 80. The telescopic mechanism drives the heating element 81 to reciprocate in the vertical direction, thereby driving the heat conductor 82 to reciprocate, so that the upper end of the heat conductor 82 protrudes from or is hidden in the channel 72. When the heating mechanism 80 is working, the upper end of the heat conductor 82 protrudes from the channel 72; after the heating mechanism 80 has finished working, the upper end of the heat conductor 82 is hidden in the channel 72; the above-mentioned arrangement is conducive to the transfer of semiconductor components or substrates to the next process. The telescopic mechanism can be an electric push rod, which can ensure the application environment requirements: clean and pollution-free; in addition, it makes the device structure compact.

[0088] Of course, in this embodiment, the chip bonding device is used for bonding between multi-layer chips and to the substrate. In other embodiments of the present invention, it can also be used for bonding single-layer chips to the substrate. The specific process is similar to the bonding of the above-mentioned multi-layer chips, and will not be described in detail again.

[0089] The above description is merely a preferred embodiment of the present application and an illustration of the technical principles employed. Those skilled in the art should understand that the scope of the invention herein is not limited to the technical solutions formed by the specific combination of the above-mentioned technical features, but also encompasses other technical solutions formed by any combination of the above-mentioned technical features or their equivalents without departing from the inventive concept. For example, a technical solution formed by replacing the above-mentioned features with (but not limited to) technical features having similar functions disclosed in this application.

Claims

1. A device for chip bonding, characterized in that: include: A carrier having a plurality of carrying areas provided thereon, wherein the carrying areas are at least used to fix the substrate to which the chip to be bonded is attached; a plurality of heating mechanisms located below the carrier and corresponding one to one with the carrier areas, each of the heating mechanisms comprising a heating element and a plurality of heat-conducting elements disposed on the heating element, the carrier further being provided with a channel communicating with the carrier area, the heat-conducting element being disposed in the channel and having one end thereof protruding from or flush with the plane where the carrier area is located; a pressing mechanism, the pressing mechanism being arranged above the carrier and opposite to the heating mechanism, the pressing mechanism comprising a pressing block and a ball screw mechanism, the ball screw mechanism being arranged in a vertical direction and driving the pressing block toward and away from the substrate, the pressing block comprising a heating module, the heating module being used to adjust the temperature of the pressing block; When the substrate is fixed on the carrying area, the heat conducting members correspond to the conductive connecting lines in the substrate one by one and abut against each other.

2. The device for chip bonding according to claim 1, characterized in that The bearing area is a groove.

3. The device for chip bonding according to claim 1, wherein: The axis of the channel extends in a vertical direction or in a direction forming a preset angle with the vertical direction.

4. The device for chip bonding according to claim 3, characterized in that The heat conducting member is columnar, and its cross-sectional diameter is adapted to the cross-sectional diameter of the channel. The heat conducting member is perpendicular to the heating member or is arranged at a preset angle to the heating member.

5. The device for chip bonding according to claim 1, wherein: The orthographic projection of the heat conducting member on the conductive connecting line partially covers the conductive connecting line.

6. The device for chip bonding according to any one of claims 1 to 5, characterized in that: The invention also includes a telescopic mechanism connected to the heating mechanism, and the telescopic mechanism drives the heating mechanism to reciprocate in a vertical direction.

7. The device for chip bonding according to claim 6, characterized in that: The telescopic mechanism is an electric push rod.

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