Apparatus, system and method for processing station impedance adjustment

Abstract

The present application relates to apparatuses, systems, and methods for processing station impedance adjustment. An apparatus for single processing station impedance adjustment can include a heated platen including a first ground plane and a second ground plane, the first ground plane and the second ground plane covering different areas of the heated platen; a first tuner connected to the first ground plane and including a first adjustable capacitance and a first sensor to detect current; and a second tuner connected to the second ground plane and including a second adjustable capacitance and a second sensor to detect current.

Description

TECHNICAL FIELD

[0001] The present application relates generally to the field of semiconductor manufacturing, and more particularly, to apparatuses, systems, and methods for process station impedance tuning in a semiconductor processing system. BACKGROUND

[0002] As semiconductor manufacturing technology advances, there is a need to increase the throughput of semiconductor processing systems, and to increase the integrated production capacity of production tools. This requires increasing the maximum number of substrates that can be processed simultaneously by a semiconductor processing system. This can be achieved by increasing the number of processing chambers mounted on a semiconductor processing system, or by using a multi-station processing chamber. A multi-station processing chamber refers to a processing chamber in which multiple processing stations can be provided, each processing station being capable of processing one substrate, so that the multi-station processing chamber can process multiple substrates simultaneously.

[0003] It is generally desirable to perform the same process on multiple substrates in a multi-station processing chamber, and to obtain the same film thickness distribution. However, differences in hardware between the processing stations can result in differences in radio frequency impedance, which in turn can affect the consistency of the process results. Therefore, a method is needed that can reduce the differences in process results between multiple processing stations.

[0004] In addition, for a single processing station, how to adjust the film thickness distribution to meet different application requirements is also a problem that needs to be considered. SUMMARY

[0005] To solve the above problems, in one embodiment of the present application, an apparatus for single processing station impedance tuning is provided, which includes a heating plate including a first ground net and a second ground net, the first ground net and the second ground net covering different areas of the heating plate; a first tuner connected to the first ground net and including a first adjustable capacitor and a first sensor for detecting current; and a second tuner connected to the second ground net and including a second adjustable capacitor and a second sensor for detecting current.

[0006] In some embodiments, the apparatus further includes a first heating plate radio frequency electrode, wherein one end of the first heating plate radio frequency electrode is connected to the first ground net, and the other end of the first heating plate radio frequency electrode is connected to the first tuner; and a second heating plate radio frequency electrode, wherein one end of the second heating plate radio frequency electrode is connected to the second ground net, and the other end of the second heating plate radio frequency electrode is connected to the second tuner. The first heating plate radio frequency electrode and the second heating plate radio frequency electrode can be nickel rods or copper rods, or other similar materials.

[0007] In some embodiments, the first and second grounding grids are concentrically arranged. The first and second heating plate RF electrodes are symmetrically arranged relative to the centers of the first and second grounding grids. In one embodiment, the first grounding grid is above the second grounding grid, and the central portion of the second grounding grid includes a hollow area at least partially covered by the first grounding grid. The hollow area is provided with connecting ribs, the second heating plate RF electrode is connected to the connecting ribs, and the first heating plate RF electrode is connected to the first grounding grid through the hollow area.

[0008] In some embodiments, the device further includes a transfer structure, the transfer structure including: a first RF transfer structure, which connects the other end of the first heating plate RF electrode to the first input electrode of the first tuner; and a second RF transfer structure, which connects the other end of the second heating plate RF electrode to the second input electrode of the second tuner. In one embodiment, the first RF transfer structure includes a first clamping structure and a first spring clip, one end of the first spring clip is fixed to the first input electrode, and the other end of the first spring clip is clamped and connected to the other end of the first heating plate RF electrode through the first clamping structure; the second RF transfer structure includes a second clamping structure and a second spring clip, one end of the second spring clip is fixed to the second input electrode, and the other end of the second spring clip is clamped and connected to the other end of the second heating plate RF electrode through the second clamping structure. Wherein, a first horizontal extension portion is included between the one end of the first spring clip and the other end of the first spring clip, and a second horizontal extension portion is included between the one end of the second spring clip and the other end of the second spring clip.

[0009] In some embodiments, the adapter structure further includes: an AC adapter structure, wherein one end of the AC adapter structure is connected to the heating disk AC electrode, the heating disk AC electrode is connected to the heating element in the heating disk, and the other end of the AC adapter structure is connected to the electrode interface of the AC filter. In one embodiment, the one end of the AC adapter structure includes a female connector structure with an internal wire spring, and the other end of the AC adapter structure includes a male connector structure that can be directly connected to the electrode interface of the AC filter. In another embodiment, the position where the other end of the AC adapter structure is connected to the electrode interface of the AC filter is below the position where the first RF adapter structure is connected to the first access electrode. In yet another embodiment, the heating disk AC electrode includes: a first pair of heating disk AC electrodes, which are connected to the first heating element in the heating disk; and a second pair of heating disk AC electrodes, which are connected to the second heating element in the heating disk. The first heating element may correspond to the first grounding grid, and the second heating element may correspond to the second grounding grid.

[0010] In some embodiments, the switching structure further includes an isolation component, wherein the isolation component isolates the AC switching structure from the first RF switching structure and the second RF switching structure. The isolation component may surround the AC switching structure, or the isolation component may surround the first RF switching structure and the second RF switching structure. In one embodiment, the isolation component includes an isolation tube or an isolation block.

[0011] In some embodiments, the transfer structure further comprises a housing for radio frequency shielding. The housing may comprise a window for operating and inspecting the interior of the transfer structure.

[0012] In another embodiment of the present application, a system for impedance adjustment of multiple processing stations is provided, comprising: a plurality of devices for impedance adjustment of a single processing station according to any embodiment of the present application, wherein each device is in one processing station.

[0013] In another embodiment of the present application, a method for single processing station impedance adjustment is provided, wherein the processing station comprises the apparatus for single processing station impedance adjustment according to any embodiment of the present application and a radio frequency electrode plate opposite to the heating plate, the method comprising: setting the first adjustable capacitor and the second adjustable capacitor to predetermined capacitance values; providing radio frequency power to the radio frequency electrode plate to form an electric field between the radio frequency electrode plate and the heating plate; detecting a first current by the first sensor; detecting a second current by the second sensor; and adjusting the capacitance value of at least one of the first adjustable capacitor and the second adjustable capacitor based on the first current and the second current, such that the first current and the second current satisfy a predetermined relationship. Wherein, the predetermined relationship can comprise that the first current is equal to the second current, the first current is greater than the second current, or the first current is less than the second current. The predetermined relationship can also comprise that one or both of the first current and the second current is equal to a predetermined value or within a predetermined range.

[0014] In another embodiment of the present application, a method for multi-processing station impedance matching is provided, wherein each of the plurality of processing stations comprises the apparatus for single processing station impedance matching according to any embodiment of the present application and a radio frequency electrode plate opposite to the heating disc, the method comprising: setting the first adjustable capacitance and the second adjustable capacitance in each of the plurality of processing stations to predetermined capacitance values; providing radio frequency power to the radio frequency electrode plate in each of the plurality of processing stations to form an electric field between the radio frequency electrode plate and the heating disc in each of the plurality of processing stations; for a first processing station of the plurality of processing stations, detecting a first current by the first sensor of the first processing station, detecting a second current by the second sensor of the first processing station, and adjusting a capacitance value of at least one of the first adjustable capacitance and the second adjustable capacitance of the first processing station based on the first current and the second current to make the first current and the second current satisfy a predetermined relationship, wherein the first current satisfying the predetermined relationship is a first value and the second current is a second value; for each of the other processing stations of the plurality of processing stations, adjusting a capacitance value of at least one of the first adjustable capacitance and the second adjustable capacitance of the processing station to make a current detected by the first sensor of the processing station be the first value and a current detected by the second sensor of the processing station be the second value. The predetermined relationship can comprise the first value being equal to the second value, the first value being greater than the second value, or the first value being less than the second value. The predetermined relationship can further comprise one or both of the first value and the second value being equal to a predetermined value or within a predetermined range. In one embodiment, the method further comprises fine tuning at least one of the first adjustable capacitance and the second adjustable capacitance of a second processing station of the plurality of processing stations after a current detected by the first sensor of the second processing station is the first value and a current detected by the second sensor of the second processing station is the second value.

[0015] The particulars of one or more examples of the application are set forth in the accompanying description and drawings. Other features, objects, and advantages will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF DRAWINGS

[0016] The disclosure in this specification mentions and includes the following figures:

[0017] Figure 1 A schematic diagram illustrating a structure of a semiconductor processing apparatus according to some embodiments of the present application;

[0018] Figure 2 A flowchart illustrating a method for single processing station impedance matching according to some embodiments of the present application;

[0019] Figure 3 A flow chart illustrating a method for multiple processing station impedance adjustment according to some embodiments of the present application;

[0020] Figures 4A-4D A schematic diagram illustrating a grounding grid structure according to some embodiments of the present application;

[0021] Figure 5 A schematic diagram illustrating a heating disc electrode arrangement according to some embodiments of the present application;

[0022] Figure 6 A schematic diagram illustrating an AC filter and tuner layout according to some embodiments of the present application;

[0023] Figures 7A-7C A schematic diagram illustrating a switching structure according to some embodiments of the present application.

[0024] Accordingly, the dimensions of the various features in the drawings can be exaggerated for clarity. The shapes and appearances of the various components in the drawings are illustrative only and can not be to scale. Additionally, elements in the drawings can be shown in a simplified form and not to actual scale. Further, the embodiments disclosed herein can be implemented in any of numerous forms, and the illustrative embodiments are not limited to the specific embodiments described herein. Rather, specific embodiments are provided so that the claimed subject matter will be thorough and complete, and will fully convey the scope of the claimed subject matter to those skilled in the art. Like reference numerals can be used to denote like elements throughout the description below. DETAILED DESCRIPTION

[0025] The present application will be more fully understood from the following detailed description taken in connection with the accompanying drawings, in which:

[0026] The use of the phrases "in one embodiment" or "according to an embodiment" in this specification does not necessarily refer to the same embodiment, nor does it imply that the claimed technical solution must include all the features described in the embodiment. Furthermore, the use of the phrases "in other (some / certain) embodiments" or "according to other (some / certain) embodiments" in this specification does not necessarily refer to different embodiments. The intent is, for example, that the claimed subject matter includes all or part of the combination of the exemplary embodiments. The terms "including" and "comprising" in this specification are used in an open-ended manner and should be interpreted as meaning "including, but not limited to..." References to "upper" and "lower" in this specification are not limited to the relationships directly presented in the drawings; they should include descriptions with clear corresponding relationships, such as "left" and "right," or the reverse of "upper" and "lower." The term "substrate" in this specification should be understood to be interchangeable with terms such as "substrate," "wafer," "die," "chip," and "silicon chip." This specification uses certain terms to refer to specific system components. As those skilled in the art will appreciate, different companies may use different names to refer to these system components.

[0027] Figure 1 A structural schematic diagram of a semiconductor processing device 100 according to some embodiments of the present application is shown. The semiconductor processing device 100 is a processing device in a processing station, which includes a reaction chamber 101. A shower plate 102 and a heating disk 104 are provided in the reaction chamber 101. The substrate to be processed (not shown in the figure) can be placed between the shower plate 102 and the heating disk 104 that are arranged opposite to each other. The shower plate 102 is used to provide reaction gas to the substrate to be processed. At the same time, the shower plate 102 can also serve as a radio frequency electrode plate. The radio frequency power supply (not shown in the figure) can provide radio frequency power to the shower plate 102 via a radio frequency matcher (not shown in the figure), thereby forming an electric field between the shower plate 102 and the heating disk 104 for process treatment.

[0028] exist Figure 1 In the example shown, the heating plate 104 includes a first grounding grid 106 and a second grounding grid 108. The first grounding grid 106 and the second grounding grid 108 may cover different areas of the heating plate 104. Figure 1 As shown, the first grounding grid 106 may be located at the center of the heating plate 104, and the second grounding grid 108 may be located at the edge of the heating plate 104. The first grounding grid 106 is a circular grid, and the second grounding grid 108 is a ring grid, and the two may be arranged concentrically. Figure 1The first ground plane 106 and the second ground plane 108 are shown to be located at the same level. In other embodiments, the first ground plane 106 and the second ground plane 108 can be located at different levels. For example, the first ground plane 106 can be located above the second ground plane 108. Those skilled in the art will appreciate that the heating plate 104 can include a larger number of ground planes, each covering a different region of the heating plate 104, and the coverage regions of the different ground planes can or can not overlap. There can be various different configurations of ground planes without departing from the spirit or scope of the present application.

[0029] The first ground plane 106 is connected to a first heating plate RF electrode 110, and the second ground plane 106 is connected to a second heating plate RF electrode 112. The first heating plate RF electrode 110 is connected to a first tuner 114 via some connecting structure, and the second heating plate RF electrode 112 is connected to a second tuner 116 via some connecting structure. The first heating plate RF electrode 110 and the second heating plate RF electrode 112 can be a conductor rod (e.g., a nickel rod or a copper rod) that is connected at one end to the corresponding ground plane by, for example, welding, and connected at the other end to the corresponding tuner, thereby connecting the corresponding tuner to the corresponding ground plane. In embodiments with a larger number of ground planes, there can be a corresponding number of tuners connected to the corresponding ground planes. The first tuner 114 and the second tuner 116 can be any tuners suitable for adjusting the impedance of the RF loop, and each can include an adjustable capacitor and a sensor for detecting current.

[0030] The semiconductor processing apparatus 100 can also include bellows 118 and a water block 120 for water cooling the apparatus. For the purpose of simplicity of illustration, Figure 1 Only some components in the semiconductor processing apparatus 100 are shown, and those skilled in the art will appreciate that the semiconductor processing apparatus 100 can also include other components not shown. Also, Figure 1 The specific sizes, shapes, locations, etc. of the components shown in FIG. 1 are for the purpose of illustration only and are not limiting. For example, the heating plate 104 can also include heating elements. In some embodiments, the heating elements can correspond to the ground planes. For example, a first heating element in the heating plate 104 can correspond to the first ground plane 106, meaning that the first heating element is located in the region covered by the first ground plane 106 (e.g., the center portion of the heating plate 104). A second heating element in the heating plate 104 can correspond to the second ground plane 108, meaning that the second heating element is located in the region covered by the second ground plane 106 (e.g., the edge portion of the heating plate 104). In other embodiments, the heating elements do not necessarily correspond to the ground planes. Each heating element can be connected to a corresponding pair of heating plate AC electrodes, which can be connected to a corresponding AC filter via some connecting structure. The AC filter is used to filter the AC voltage provided to the heating element.

[0031] Figure 2 A flow chart of a method 200 for impedance adjustment of a single processing station according to some embodiments of the present application is shown. Figure 1 The method 200 is described using the semiconductor processing device 100 as shown, but it should be understood that the method 200 may also be performed using other devices having similar structures or functions.

[0032] At step 202, the first adjustable capacitor in the first tuner 114 and the second adjustable capacitor in the second tuner 116 are set to predetermined capacitance values. The predetermined capacitance values ​​can be selected based on process requirements. In one embodiment, the predetermined capacitance values ​​of the first and second adjustable capacitors are the same. In other embodiments, the predetermined capacitance values ​​of the first and second adjustable capacitors are different. At step 204, RF power is supplied to an RF electrode plate (e.g., the shower plate 102) to form an electric field between the RF electrode plate and the heating plate 104, and the process begins. At step 206, a first current is detected by a first sensor in the first tuner 114, and a second current is detected by a second sensor in the second tuner 116. The first and second sensors can detect high-frequency (e.g., 13.56 MHz or 27 MHz) current values. Since the high-frequency current value is proportional to the thickness of the formed film, the first and second currents can respectively reflect the film thickness at the locations corresponding to the first and second ground grids 106 and 108. At step 208, the capacitance value of at least one of the first and second adjustable capacitors is adjusted based on the first and second currents so that the first and second currents satisfy a predetermined relationship, thereby obtaining a desired film thickness distribution. For example, to obtain a film with uniform thickness at the center and edge, the predetermined relationship may be set such that the first current is equal to the second current; to obtain a film with a thicker center than at the edge, the predetermined relationship may be set such that the first current is greater than the second current; and to obtain a film with a thinner center than at the edge, the predetermined relationship may be set such that the first current is less than the second current. In some embodiments, the predetermined relationship may include one or both of the first and second currents being equal to a predetermined value or being within a predetermined range.

[0033] For a multi-station processing system, each processing station may contain Figure 1 A semiconductor processing apparatus 100 is shown. Figure 3 A flow chart of a method 300 for impedance adjustment of multiple processing stations according to some embodiments of the present application is shown. Figure 1The method 300 is described with reference to the semiconductor processing apparatus 100 shown in FIG. 1. It should be understood that the method 300 can also be performed using other apparatuses having similar structures or functions. The method 300 can be applied to multiple processing stations located in the same processing chamber, or to multiple processing stations located in different processing chambers.

[0034] At step 302, a first tunable capacitance in a first tuner 114 and a second tunable capacitance in a second tuner 116 in each processing station are set to predetermined capacitance values. The predetermined capacitance values can be selected according to process requirements. In one embodiment, the predetermined capacitance values of all tunable capacitances in the tuners of all processing stations are the same. At step 304, radio frequency power is provided to a radio frequency electrode plate (e.g., a shower plate 102) in each processing station to form an electric field between the radio frequency electrode plate and a heating plate 104 in each processing station, and a process is started. At step 306, for a first processing station of the multiple processing stations, a first current is detected by a first sensor in the first tuner 114 in the first processing station, a second current is detected by a second sensor in the second tuner 116 in the first processing station, and a capacitance value of at least one of the first tunable capacitance and the second tunable capacitance of the first processing station is adjusted based on the first current and the second current to make the first current and the second current satisfy a predetermined relationship, so that a desired film thickness profile is obtained. For example, to obtain a film with uniform thickness in a center portion and an edge portion, the predetermined relationship can be set as the first current being equal to the second current; to obtain a film with a center portion thicker than an edge portion, the predetermined relationship can be set as the first current being greater than the second current; to obtain a film with a center portion thinner than an edge portion, the predetermined relationship can be set as the first current being less than the second current. In some embodiments, the predetermined relationship can include one or both of the first current and the second current being equal to a predetermined value or within a predetermined range. The first current satisfying the predetermined relationship is a first value, and the second current satisfying the predetermined relationship is a second value. At step 308, for each of the other processing stations of the multiple processing stations, a capacitance value of at least one of the first tunable capacitance and the second tunable capacitance of the processing station is adjusted to make the first sensor of the processing station detect a current of the first value and the second sensor of the processing station detect a current of the second value. In this way, consistency of process results of the processing stations can be ensured. In some embodiments, after the tunable capacitances of the processing stations are adjusted to be consistent, if the film thickness profile of an individual processing station does not meet the requirements, the at least one of the first tunable capacitance and the second tunable capacitance in the tuner of the processing station can be further fine-tuned.

[0035] Figures 4A-4DA schematic view of a ground net structure according to some embodiments of the present application is shown. Figure 4A A combined view of the first ground net 402 and the second ground net 404 is shown. Figure 4B A combined view of the first ground net 402 and the second ground net 404 is shown. Figure 4A The second ground net 404 in the combined view. Figure 4C The first ground net 402 in the combined view. Figure 4A The first ground net 402 in the combined view. Figure 4D A partial enlarged view of the first ground net 402 and the second ground net 404 in the combined view. In the example shown, the first ground net 402 is concentrically arranged above the second ground net 404. In some embodiments, the vertical spacing between the first ground net 402 and the second ground net 404 is about 0.3-1 mm. The central portion of the second ground net 404 contains a hollowed region which is at least partially covered by the first ground net 402, and connection ribs 410 are arranged in the hollowed region, to which the second heating disc RF electrode 408 is connected, and the first heating disc RF electrode 406 is connected to the first ground net 402 through the hollowed region. In the example shown, the first heating disc RF electrode 406 and the second heating disc RF electrode 408 are symmetrically arranged with respect to the center of the first ground net 402 and the second ground net 404; the coverage of the first ground net 402 is smaller than the hollowed region of the central portion of the second ground net 404, and in one embodiment, the vertical spacing between the outer circumference of the first ground net 402 and the inner circumference of the second ground net 404 is about 0.10 mm. It should be understood by those skilled in the art that the first ground net and the second ground net can adopt other different shapes and arrangements without departing from the spirit or scope of the present application. Figure 4A Figures 4A-4D Figure 4A

[0036] Figure 5 A schematic view of a heating disc electrode arrangement according to some embodiments of the present application is shown. In the example shown, the heating disc electrodes include two heating disc RF electrodes 502 and two pairs of heating disc AC electrodes 504, and the heating disc AC electrodes are closer to the center of the heating disc than the heating disc RF electrodes. In one embodiment, the heating disc RF electrode 502 and the pair of heating disc AC electrodes 504 on the left side correspond to the first ground net (e.g. the first ground net 402 in the combined view), and the heating disc RF electrode 502 and the pair of heating disc AC electrodes 504 on the right side correspond to the second ground net (e.g. the second ground net 404 in the combined view). Figure 5 Figure 5 Figures 4A-4D Figure 5 Figures 4A-4D Figure 5 ​​​​​​​​The arrangement shown can allow the locations of the heated disk electrodes to be relatively compact. Other numbers of heated disk RF electrodes and heated disk AC electrodes can be included in other embodiments, and other arrangements can be used without departing from the spirit or scope of the application.

[0037] Figure 6 A layout diagram of an AC filter 606 and a tuner 608 according to some embodiments of the application is shown. Figure 6 An example includes two AC filters 606 placed side-by-side and two tuners 608 placed side-by-side. The AC filters 606 and the tuners 608 can be placed in any suitable manner, such as vertically or horizontally. The AC filters 606 and the tuners 608 are connected to the heated disk 602 by a transition structure 604.

[0038] Figures 7A-7C A diagram of a transition structure according to some embodiments of the application is shown. The upper end of the transition structure can be connected to the heated disk electrodes, and the lower end can be connected to the AC filters and the tuners. Figure 7A A perspective view of a transition structure is shown. Figure 7B A perspective view of a transition structure is shown. Figure 7A A diagram of a transition structure is shown after removal of a housing 702 to shield RF. Figure 7C A diagram of a transition structure is shown after removal of a housing 702 to shield RF. Figure 7B A diagram of a transition structure is shown after removal of an isolation block 708, and also shows how the transition structure is connected to the heated disk electrodes. Figures 7A-7C The transition structure shown includes a housing 702, an isolation assembly, an RF transition structure, and an AC transition structure 720.

[0039] The housing 702 is used to shield RF and is also part of the RF loop. For example, the ground of the tuner can be connected to the housing 702 to form the RF loop. The housing 702 also includes a window 704 to allow access to and inspection of the interior of the transition structure. Removing the portion of the housing at the window 704 exposes the interior of the transition structure.

[0040] The isolation assembly includes isolation tubes and the like and isolation blocks 708. The isolation assembly isolates the AC transition structure from the RF transition structure, allowing the RF path to be accessed and inspected while live. The isolation assembly (e.g., isolation tubes 706) can surround the AC transition structure. The isolation assembly (e.g., isolation blocks 708) can surround the RF transition structure. In some embodiments, the isolation assembly includes RF insulating materials such as polyether ether ketone (PEEK) or ceramic. In some embodiments, the isolation tubes or blocks have a thickness greater than or equal to 1 mm. The isolation assembly surrounds the contact crossover structure in a snap-in isolation manner.

[0041] The RF adapter structure is used to connect the heating plate RF electrode 710 to the access electrode 712 of the tuner. In Figure 7C In an example, the RF adapter structure includes a clamping structure 714 and a spring 716. One end of the spring 716 is fixed on the access electrode 712 of the tuner, for example, by a screw or similar structure. The other end of the spring 716 is clamped to the heating plate RF electrode 710 by the clamping structure 714. The spring 716 includes a horizontally extending portion between the two ends. Figure 7C An enlarged view of the clamping structure 714 is shown in the dashed box. The heating plate RF electrode 710 will elongate when the temperature rises and will shorten when the temperature drops. The clamping structure 714 can avoid the relative movement of the heating plate RF electrode 710 and the RF adapter structure caused by temperature changes. The spring 716 can buffer the deformation of the heating plate RF electrode 710 caused by temperature changes. In some embodiments, the RF adapter structure includes copper or silver material or other materials conducive to RF transmission. In order to better conduct RF, the surface thereof is plated with nickel, gold, silver or other materials conducive to RF transmission. Preferably, the plating process thereof includes a composite film, for example, nickel plating followed by gold or silver plating. In some embodiments, the spring 716 includes beryllium copper or other high-elasticity materials. Such materials have a long service life and can meet the requirements of multiple deformations. In some embodiments, the clamping structure 714 includes copper material. In order to meet the need of transmitting RF signals, the surface of the clamping structure 714 and the spring 716 can be plated with nickel (for example, 2 microns) followed by gold or silver (for example, 5 microns). The internal structure of the isolation block 708 surrounding the RF adapter structure is designed to limit the movement direction of the clamping structure 714, so that it can only move up and down with the shortening and elongation of the heating plate RF electrode 710, but cannot move horizontally.

[0042] The AC adapter structure 720 is used to connect the heating plate AC electrode 718 to the electrode interface of the AC filter. In Figures 7A-7C In an example, the end of the AC adapter structure 720 connecting the heating plate AC electrode 718 includes a female structure with a wire spring inside, so that the heating plate AC electrode 718 can be directly inserted into the AC adapter structure 720 and fixedly connected. The other end of the AC adapter structure 720 includes a male structure, so that it can be directly inserted into the electrode interface of the AC filter and fixedly connected. Such a connection can avoid the problem that when the AC filter is connected to the heating plate wire, the impedance of the wire is less than the impedance between the shower plate and the heating plate in some working conditions, causing RF to flow into the AC filter line and not to act on the gas to generate plasma. In some embodiments, the AC adapter structure 720 includes copper material or other similar conductive materials, and the surface thereof can be plated with nickel followed by gold or silver.

[0043] In Figure 7CIn the illustrated example, the AC adapter structure 720 is staggered with the position of the electrode interface of the AC filter below and behind the position of the RF adapter structure connected with the access electrode 712 of the tuner, both using the space, so that the adapter structure is compact and practical.

[0044] In the embodiments of the present application, the adapter structure directly connects the AC filter and the tuner with the heating plate electrode, so that the AC filter and the tuner can move up and down with the heating plate, avoiding the change of impedance due to relative movement.

[0045] The present application provides devices, systems and methods for processing station impedance adjustment, which can well adjust the process film thickness distribution of a single station and the process film performance difference between multiple stations, can provide process production quality and efficiency, and create good production economic value. The devices, systems and methods described in the present application can be applied in 3D semiconductor processing technology, atomic layer deposition process, plasma enhanced chemical vapor deposition process or other similar processes. For example, the devices of the present application can be applied to plasma vapor deposition equipment of 13.56MHz+400KHz and 27MHz+400KHz dual-frequency systems and other application frequency radio frequency systems.

[0046] The description in the specification is provided to enable a person skilled in the art to carry out or use the present application. Various modifications to the present application will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the examples and designs described in the specification, but is given the widest scope consistent with the principles and novel features disclosed in the specification.

Claims

1. An apparatus for single processing station impedance adjustment, comprising: a heating plate comprising a first ground net and a second ground net, the first ground net and the second ground net covering different areas of the heating plate; a first tuner connected to the first ground net and including a first adjustable capacitor and a first sensor for detecting current; and a second tuner connected to the second ground net and including a second adjustable capacitor and a second sensor for detecting current; a first heating plate RF electrode, one end of which is connected to the first ground net, the other end of which is connected to a first access electrode of the first tuner via a first RF adapter structure, and a second heating plate RF electrode, one end of which is connected to the second ground net, the other end of which is connected to a second access electrode of the second tuner via a second RF adapter structure, wherein the first RF adapter structure includes a first clamping structure and a first spring, one end of the first spring is fixed on the first access electrode, the other end of the first spring is clamped and connected with the other end of the first heating plate RF electrode through the first clamping structure; and the second RF adapter structure includes a second clamping structure and a second spring, one end of the second spring is fixed on the second access electrode, the other end of the second spring is clamped and connected with the other end of the second heating plate RF electrode through the second clamping structure.

2. The apparatus according to claim 1, wherein the first heating plate RF electrode and the second heating plate RF electrode are nickel rods or copper rods.

3. The apparatus according to claim 1, wherein the first ground net and the second ground net are concentrically arranged.

4. The apparatus according to claim 3, wherein the first heating plate RF electrode and the second heating plate RF electrode are symmetrically arranged with respect to the centers of the first ground net and the second ground net.

5. The apparatus according to claim 3, wherein the first ground net is above the second ground net, a central part of the second ground net includes a hollowed-out area which is at least partially covered by the first ground net, a connecting rib is arranged in the hollowed-out area, the second heating plate RF electrode is connected to the connecting rib, and the first heating plate RF electrode is connected to the first ground net through the hollowed-out area.

6. The apparatus according to claim 1, wherein a first horizontal extension part is included between the one end of the first spring and the other end of the first spring, and a second horizontal extension part is included between the one end of the second spring and the other end of the second spring.

7. The apparatus according to claim 1, wherein the first RF adapter structure and the second RF adapter structure comprise copper or silver material.

8. The apparatus according to claim 1, wherein surfaces of the first RF adapter structure and the second RF adapter structure are plated with at least one of nickel, gold, and silver.

9. The apparatus according to claim 1, wherein the adapter structure further comprises: ​ An AC adapter structure, wherein one end of the AC adapter structure is connected to a heating tray AC electrode, the heating tray AC electrode is connected to a heating element in the heating tray, and the other end of the AC adapter structure is connected to an electrode interface of an AC filter.

10. The apparatus of claim 9, wherein the other end of the AC adapter structure is connected to the electrode interface of the AC filter below a location where the first RF adapter structure is connected to the first access electrode.

11. The apparatus of claim 9, wherein the heating tray AC electrode comprises: a first pair of heating tray AC electrodes connected to a first heating element in the heating tray; and a second pair of heating tray AC electrodes connected to a second heating element in the heating tray.

12. The apparatus of claim 11, wherein the first heating element corresponds to the first ground mesh, and the second heating element corresponds to the second ground mesh.

13. The apparatus of claim 9, wherein the adapter structure further comprises an isolation component, wherein the isolation component isolates the AC adapter structure from the first RF adapter structure and the second RF adapter structure.

14. The apparatus of claim 13, wherein the isolation component encloses the AC adapter structure.

15. The apparatus of claim 13, wherein the isolation component encloses the first RF adapter structure and the second RF adapter structure.

16. The apparatus of claim 13, wherein the isolation component comprises an isolation tube or an isolation block.

17. The apparatus of claim 1, wherein the adapter structure further comprises a housing to shield radio frequency.

18. The apparatus of claim 17, wherein the housing comprises a window to operate and inspect the inside of the adapter structure.

19. A system for impedance adjustment of multiple processing stations, comprising: a plurality of apparatuses according to any one of claims 1-18, wherein each apparatus is in one processing station.

20. A method for impedance adjustment of a single processing station, wherein the processing station comprises an apparatus according to any one of claims 1-18 and a radio frequency electrode plate opposite to the heating tray, the method comprising: setting the first adjustable capacitor and the second adjustable capacitor to predetermined capacitance values; providing radio frequency power to the radio frequency electrode plate to form an electric field between the radio frequency electrode plate and the heating tray; detecting a first current by the first sensor; detecting a second current by the second sensor; and adjusting a capacitance value of at least one of the first adjustable capacitor and the second adjustable capacitor based on the first current and the second current such that the first current and the second current satisfy a predetermined relationship.

21. The method of claim 20, wherein the predetermined relationship comprises the first current being equal to the second current, the first current being greater than the second current, or the first current being less than the second current. ​ ​ 22. The method of claim 20, wherein the predetermined relationship comprises one or both of the first current and the second current being equal to a predetermined value or within a predetermined range.

23. A method for impedance regulation of a plurality of processing stations, wherein each processing station of the plurality of processing stations comprises the apparatus of any one of claims 1-18 and a radio frequency electrode plate opposite the heating disc, the method comprising: setting the first adjustable capacitance and the second adjustable capacitance in each processing station to predetermined capacitance values; providing radio frequency power to the radio frequency electrode plate in each processing station to form an electric field between the radio frequency electrode plate and the heating disc in each processing station; for a first processing station of the plurality of processing stations: detecting a first current by the first sensor of the first processing station; detecting a second current by the second sensor of the first processing station; and adjusting a capacitance value of at least one of the first adjustable capacitance and the second adjustable capacitance of the first processing station based on the first current and the second current to cause the first current and the second current to satisfy a predetermined relationship, wherein the first current satisfying the predetermined relationship is a first value and the second current is a second value; for each of other processing stations of the plurality of processing stations: adjusting a capacitance value of at least one of the first adjustable capacitance and the second adjustable capacitance of the processing station to cause a current detected by the first sensor of the processing station to be the first value and a current detected by the second sensor of the processing station to be the second value.

24. The method of claim 23, wherein the predetermined relationship comprises the first value being equal to the second value, the first value being greater than the second value, or the first value being less than the second value.

25. The method of claim 23, wherein the predetermined relationship comprises one or both of the first value and the second value being equal to a predetermined value or within a predetermined range. after the current detected by the first sensor of a second processing station of the plurality of processing stations is the first value and the current detected by the second sensor of the second processing station is the second value, fine tuning at least one of the first adjustable capacitance and the second adjustable capacitance of the second processing station.

26. The method of claim 23, further comprising:

26. The method of claim 23, wherein the predetermined relationship comprises the first value being equal to the second value, the first value being greater than the second value, or the first value being less than the second value.

27. The method of claim 23, wherein the predetermined relationship comprises one or both of the first value and the second value being equal to a predetermined value or within a predetermined range.

28. The method of claim 23, wherein the first value is equal to the second value, the first value is greater than the second value, or the first value is less than the second value.

29. The method of claim 23, wherein one or both of the first value and the second value is equal to a predetermined value or within a predetermined range.

30. The method of claim 23, wherein the first value is equal to the second value, the first value is greater than the second value, or the first value is less than the second value.

31. The method of claim 23, wherein one or both of the first value and the second value is equal to a predetermined value or within a predetermined range.

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