Sensor device, electronic device and method for reducing signal noise

Abstract

A sensor device, an electronic device, and a method for reducing signal noise. The sensor device includes a first detection area and a second detection area. The first detection area includes at least one detection unit, and the detection unit includes a first detection electrode and a second detection electrode opposite to each other and a first insulating layer. The first detection electrode is electrically insulated from the second detection electrode by the first insulating layer. The second detection area includes at least one sensor unit, and the sensor unit includes a first sensor electrode, a second sensor electrode, and a first light sensing layer, and the first light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a sensor device, an electronic device, and a method for reducing signal noise. Background Art

[0002] Under-screen fingerprint recognition, that is, identifying fingerprints within the display screen, is a solution to realize fingerprint recognition function under the trend of full-screen phones. Summary of the invention

[0003] At least one embodiment of the present disclosure provides a sensor device, which includes a first detection area and a second detection area.

[0004] Wherein, the first detection area includes at least one detection unit,

[0005] The detection unit includes a first detection electrode and a second detection electrode facing each other and a first insulating layer.

[0006] The first detection electrode is electrically insulated from the second detection electrode by the first insulating layer,

[0007] The second detection zone includes at least one sensor unit,

[0008] The sensor unit includes a first sensor electrode, a second sensor electrode and a first light sensing layer, and

[0009] The first light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode.

[0010] For example, in the sensor device according to at least one embodiment of the present disclosure, the first detection area is around the second detection area and does not overlap with the second detection area.

[0011] For example, in the sensor device according to at least one embodiment of the present disclosure, the detection unit further includes a second light sensing layer, and the second light sensing layer is electrically insulated from the first detection electrode by the first insulating layer.

[0012] For example, in the sensor device according to at least one embodiment of the present disclosure, the detection unit further includes a second insulating layer, and the second light sensing layer is electrically insulated from the second detection electrode by the second insulating layer.

[0013] For example, in a sensor device according to at least one embodiment of the present disclosure, the second photosensitive layer is sandwiched between the first detection electrode and the second detection electrode, and includes a first P-type semiconductor sublayer, a first intrinsic sublayer and a first N-type semiconductor sublayer stacked in sequence between the first detection electrode and the second detection electrode.

[0014] For example, in the sensor device according to at least one embodiment of the present disclosure, the first detection electrode is at least partially transparent; or the second detection electrode is at least partially transparent; or both the first detection electrode and the second detection electrode are at least partially transparent.

[0015] For example, in the sensor device according to at least one embodiment of the present disclosure, the detection unit further includes a first switching transistor, and a first electrode of the first switching transistor is electrically connected to the first detection electrode or the second detection electrode.

[0016] For example, the sensor device according to at least one embodiment of the present disclosure further includes a first gate signal line and a first signal reading line.

[0017] Wherein, the first gate signal line is electrically connected to the gate of the first switch transistor, and

[0018] The first signal reading line is electrically connected to the second electrode of the first switch transistor.

[0019] For example, in the sensor device according to at least one embodiment of the present disclosure, the at least one detection unit includes a plurality of detection units, and the plurality of detection units are arranged in an array.

[0020] For example, in a sensor device according to at least one embodiment of the present disclosure, the first photosensitive layer is sandwiched between the first sensor electrode and the second sensor electrode, and includes a second P-type semiconductor sublayer, a second intrinsic sublayer, and a second N-type semiconductor sublayer stacked in sequence between the first sensor electrode and the second sensor electrode.

[0021] For example, in the sensor device according to at least one embodiment of the present disclosure, the first sensor electrode is at least partially transparent; or the second sensor electrode is at least partially transparent; or both the first sensor electrode and the second sensor electrode are at least partially transparent.

[0022] For example, in the sensor device according to at least one embodiment of the present disclosure, the sensor unit further includes a second switch transistor, and a first electrode of the second switch transistor is electrically connected to the first sensor electrode or the second sensor electrode.

[0023] For example, the sensor device according to at least one embodiment of the present disclosure further includes a second gate signal line and a second signal reading line.

[0024] The second gate signal line is electrically connected to the gate of the second switch transistor, and

[0025] The second signal reading line is electrically connected to the second electrode of the second switch transistor.

[0026] For example, in the sensor device according to at least one embodiment of the present disclosure, the at least one sensor unit includes a plurality of sensor units, and the plurality of sensor units are arranged in an array.

[0027] For example, in the sensor device according to at least one embodiment of the present disclosure, the first detection electrode and the first sensor electrode are formed in the same layer and have the same shape and size.

[0028] The second detection electrode is formed in the same layer as the second sensor electrode and has the same shape and size.

[0029] For example, in the sensor device according to at least one embodiment of the present disclosure, the first detection electrode and the first sensor electrode are formed in the same layer and have the same shape and size.

[0030] The second detection electrode is formed in the same layer as the second sensor electrode and has the same shape and size, and

[0031] The first photosensitive layer and the second photosensitive layer are formed in the same layer and have the same shape and size.

[0032] At least one embodiment of the present disclosure further provides an electronic device, comprising:

[0033] the sensor device; and

[0034] A signal processing device is signal-connected to the sensor device and is configured to obtain a first signal through at least one detection unit in a first detection area and a second signal through at least one sensor unit in a second detection area of ​​the sensor device, and use the first signal as a common-mode noise signal of the second signal to perform a noise reduction operation on the second signal.

[0035] For example, the electronic device according to at least one embodiment of the present disclosure further includes a display panel, wherein the display panel includes a display area and a peripheral area arranged around the display area, and the sensor device is arranged in the display area or in the peripheral area.

[0036] At least one embodiment of the present disclosure also provides a method for reducing signal noise, comprising:

[0037] Obtaining a first signal through at least one detection unit of the first detection zone, wherein the detection unit includes a first detection electrode, a second detection electrode and a first insulating layer, and the first detection electrode is electrically insulated from the second detection electrode by the first insulating layer;

[0038] obtaining a second signal through at least one sensor unit in the second detection zone, wherein the sensor unit comprises a first sensor electrode, a second sensor electrode and a second light sensing layer, and the second light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode; and

[0039] By using the first signal as a common mode noise signal of the second signal, a noise reduction operation is performed on the second signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0041] Figure 1A is a schematic block diagram of an example of a sensor device according to at least one embodiment of the present disclosure.

[0042] Figure 1B is a schematic block diagram of another example of a sensor device according to at least one embodiment of the present disclosure.

[0043] Figure 2 is a schematic structural diagram of an example of a detection unit according to at least one embodiment of the present disclosure.

[0044] Figure 3 is a schematic structural diagram of another example of a detection unit according to at least one embodiment of the present disclosure.

[0045] Figure 4 is a schematic structural diagram of another example of a detection unit according to at least one embodiment of the present disclosure.

[0046] Figure 5 is a schematic structural diagram of an example of a sensor unit according to at least one embodiment of the present disclosure.

[0047] Figure 6 is along Figure 1A Cross-sectional view along line L-L'.

[0048] Figure 7 is a top view of a first detection zone according to at least one embodiment of the present disclosure.

[0049] Figure 8 is a top view of a second detection zone according to at least one embodiment of the present disclosure.

[0050] Fig. 9 is a schematic structural diagram of an electronic device according to at least one embodiment of the present disclosure.

[0051] Fig. 10Ais a top view of a display panel according to at least one embodiment of the present disclosure.

[0052] Fig. 10B is another top view of a display panel according to at least one embodiment of the present disclosure.

[0053] Fig.11A is along Fig. 10A Cross-sectional view along line S-S'.

[0054] Fig. 11B is along Fig. 10A Another cross-sectional view of the line SS' in FIG.

[0055] Fig.12 is a schematic flowchart of a method for reducing signal noise according to at least one embodiment of the present disclosure. DETAILED DESCRIPTION

[0056] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0057] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0058] In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed descriptions of well-known functions and well-known components.

[0059] In some technical solutions, in order to reduce the signal noise of the sensor, a non-responsive sensor unit can be designed in the sensor array. For example, in the under-screen fingerprint recognition application, when a sensor unit using a photodiode as a photosensitive element is used for fingerprint recognition, a light-shielding metal can be used to shield the photodiode to prevent the photodiode from being irradiated by light, so that the shielded photodiode acts as a non-responsive sensor unit. However, since the reflection of the light-shielding metal may be noticed by the user, it will cause visualization problems, which will adversely affect the display effect.

[0060] The embodiments of the present disclosure provide a sensor device, an electronic device, and a method for reducing signal noise, so as to reduce the signal noise of a signal to be detected, improve the signal-to-noise ratio, and avoid using light-shielding metal, thereby not affecting the display effect.

[0061] In the present disclosure, various embodiments of the present disclosure will be described by taking the sensor device used for fingerprint recognition as an example. However, it should be understood that the embodiments of the present disclosure are not limited thereto.

[0062] Figure 1A is a schematic block diagram of an example of a sensor device according to at least one embodiment of the present disclosure, Figure 1B is a schematic block diagram of another example of a sensor device according to at least one embodiment of the present disclosure.

[0063] like Figure 1A and Figure 1B As shown, the sensor device 10 according to at least one embodiment of the present disclosure may include a first detection area 11 and a second detection area 12. Figure 1A Two first detection zones 11 and one second detection zone 12 are shown in FIG. Figure 1B , two first detection zones 11 and two second detection zones 12 are shown, but it should be understood that the embodiments of the present disclosure do not limit the number of first detection zones 11 and second detection zones 12. For example, in other embodiments, the sensor device 10 may further include one first detection zone 11 or three or more first detection zones 11, and the sensor device 10 may further include three or more second detection zones 12.

[0064] For example, the first detection area 11 is around the second detection area 12 and does not overlap with the second detection area 12. Figure 1A The first detection zone 11 is shown on both sides of the second detection zone 12 and Figure 1B, the first detection area 11 and the second detection area 12 are alternately arranged, but it should be understood that the embodiments of the present disclosure do not limit the arrangement of the first detection area 11 and the second detection area 12. For example, in other embodiments, the first detection area 11 may be arranged to surround the second detection area 12, for example, the first detection area 11 is arranged around the second detection area 12; or the first detection area 11 and the second detection area 12 are arranged in multiple rows and columns.

[0065] The first detection zone 11 includes at least one detection unit A. The embodiments of the present disclosure do not limit the arrangement of the detection units in the first detection zone 11. For example, in the case where the first detection zone 11 includes a plurality of detection units, the plurality of detection units may be arranged in an array for ease of manufacture and correspond to the arrangement of the sensor units in the second detection zone (as described below). It should be understood that Figure 1A The number of detection units A shown in the figure is merely exemplary and is not limited to this in the embodiments of the present disclosure.

[0066] Figure 2 1 is a schematic diagram of the structure of an example of a detection unit according to at least one embodiment of the present disclosure. The detection unit includes a first detection electrode 111 and a second detection electrode 112 that are opposite to each other and a first insulating layer 113. The first detection electrode 111 is electrically insulated from the second detection electrode 112 by the first insulating layer 113. For example, the first detection electrode 111, the first insulating layer 113, and the second detection electrode 112 are planar and stacked together. The orthographic projection of the first detection electrode 111 on the plane where the second detection electrode 112 is located may overlap at least partially with the second detection electrode 112. That is, the first detection electrode 111 and the second detection electrode 112 form a capacitor through the first insulating layer 113. For example, the first insulating layer 113 is sandwiched between the first detection electrode 111 and the second detection electrode 112.

[0067] The materials of the first detection electrode 111 and the second detection electrode 112 may be the same or different, and both may be metals, alloys, conductive oxides, conductive polymers, or a combination thereof.

[0068] For example, in at least one embodiment, the first detection electrode 111 and the second detection electrode 112 are formed of different materials. Examples of the material of one of the first detection electrode 111 and the second detection electrode 112 may include, but are not limited to, nickel (Ni), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), selenium (Se), rhodium (Rh), ruthenium (Ru), iridium (Ir), rhenium (Re), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum (Al), iron (Fe), cobalt (Co), copper (Cu), and alloys and oxides thereof, or tin oxide, indium tin oxide (ITO), zinc oxide, titanium oxide, PEDOT:PSS (3,4-ethylenedioxythiophene:poly (4-styrenesulfonic acid)), PANI (polyaniline), etc.

[0069] For example, examples of materials of the other of the first detection electrode 111 and the second detection electrode 112 may include, but are not limited to, magnesium (Mg), calcium (Ca), indium (In), lithium (Li), aluminum (Al), silver (Ag) or their alloys or fluorides, such as magnesium (Mg)-silver (Ag) alloys, lithium (Li)-fluorine compounds, lithium (Li)-oxygen (O) compounds, etc.

[0070] Alternatively, in at least one embodiment, the first detection electrode 111 and the second detection electrode 112 may also be formed of the same material, which is not limited in the embodiments of the present disclosure.

[0071] In at least one embodiment, the first detection electrode 111 may be at least partially transparent; or, the second detection electrode 112 may be at least partially transparent; or, both the first detection electrode 111 and the second detection electrode 112 may be at least partially transparent.

[0072] The first insulating layer 113 may include any suitable insulating material. Examples of the material of the first insulating layer 113 may include, but are not limited to, silicon dioxide, silicon nitride, aluminum oxide, zirconium dioxide, yttrium trioxide, tantalum pentoxide, lanthanum oxide, titanium dioxide, or a combination thereof.

[0073] In at least one embodiment, the detection unit may further include a second light sensing layer, and the first detection electrode 111 or the second detection electrode 112 is electrically insulated from the second light sensing layer by a first insulating layer. For example, the second light sensing layer may be sandwiched between the first detection electrode 111 and the second detection electrode 112, but it should be understood that the embodiments of the present disclosure are not limited thereto.

[0074] Figure 3 is a schematic diagram of another example of a detection unit according to at least one embodiment of the present disclosure. Figure 3 The detection unit further includes the second light sensing layer 114. Figure 3 The detection unit in Figure 2 The detection units in are basically the same. Figure 2 The embodiments shown and Figure 3 The same aspects as those of the illustrated embodiments will not be described in detail.

[0075] The second light sensing layer 114 is electrically insulated from the first detection electrode 111 by the first insulating layer 113 and is sandwiched between the first detection electrode 111 and the second detection electrode 112. The second light sensing layer 114 can be electrically connected to the second detection electrode 112. The second light sensing layer 114 can generate an electrical signal based on the light irradiating the second light sensing layer 114. For example, the second light sensing layer 114 can be planar and stacked with the first detection electrode 111, the first insulating layer 113, and the second detection electrode 112.

[0076] It should be understood that Figure 3 The stacking sequence in FIG. 1 is only illustrative. In some embodiments, the first detection electrode 111, the first insulating layer 113, the second light sensing layer 114 and the second detection electrode 112 may be stacked in the same manner as in FIG. Figure 3 The stacking order may be reversed (ie, the first detection electrode 111 may be located at the lowest layer, and the second detection electrode 112 may be located at the top layer), which is not limited in the embodiments of the present disclosure.

[0077] The second photosensitive layer 114 may include semiconductor materials such as silicon and germanium, for example, it may be PN type, PIN type, etc. In at least one embodiment, the second photosensitive layer 114 may be, for example, PIN type. For example, the second photosensitive layer 114 may include a first P-type semiconductor sublayer 1141, a first intrinsic sublayer 1142, and a first N-type semiconductor sublayer 1143 stacked in sequence. The first P-type semiconductor sublayer 1141, the first intrinsic sublayer 1142, and the first N-type semiconductor sublayer 1143 may all be made of conventional materials in the art, and the embodiments of the present disclosure are not limited thereto.

[0078] In the case where the first detection electrode 111 or the second detection electrode 112 or the first detection electrode 111 and the second detection electrode 112 are at least partially transparent, the second photosensitive layer 114 may be allowed to be irradiated by light. For example, when the sensor device is used for fingerprint recognition, light emitted from the display panel or a separately provided light source for fingerprint recognition may pass through the first detection electrode 111 or the second detection electrode 112 to irradiate the second photosensitive layer 114 after being reflected by the finger. However, since the first detection electrode 111 or the second detection electrode 112 is electrically insulated from the second photosensitive layer 114 by the first insulating layer 113, the charge accumulated in the second photosensitive layer 114 due to light cannot be read out via the first detection electrode 111 or the second detection electrode 112.

[0079] In at least one embodiment, the first detection electrode 111 and the second detection electrode 112 are both electrically insulated from the second light sensing layer 114 by an insulating layer.

[0080] Figure 4 is a schematic diagram of another example of a detection unit according to at least one embodiment of the present disclosure. Figure 4 The detection unit further includes a second insulating layer 115. Figure 4 The detection unit in Figure 3 The detection units in are basically the same. Figure 4 The embodiments shown and Figure 3 The same aspects as those of the illustrated embodiments will not be described in detail.

[0081] The second insulating layer 115 electrically insulates the second photosensitive layer 114 from the first detection electrode 111. The second insulating layer 115 may also be in a planar shape and stacked together with the first detection electrode 111, the first insulating layer 113, the second detection electrode 112 and the second photosensitive layer 114.

[0082] The second insulating layer 115 may include any suitable insulating material. Examples of the material of the second insulating layer 115 may include, but are not limited to, silicon dioxide, silicon nitride, aluminum oxide, zirconium dioxide, yttrium trioxide, tantalum pentoxide, lanthanum oxide, titanium dioxide, or a combination thereof. The first insulating layer 113 and the second insulating layer 115 may be formed of the same or different materials, which is not limited in the embodiments of the present disclosure.

[0083] like Figure 1A As shown, the second detection area 12 includes at least one sensor unit B. The embodiment of the present disclosure does not limit the arrangement of the sensor units in the second detection area 12. For example, in the case where the second detection area 12 includes multiple sensor units, the multiple sensor units can be arranged in an array to facilitate manufacturing and to form a detection "image" to broaden the scope of application. It should be understood that Figure 1A The number of sensor units B shown in FIG. 1 is merely exemplary and is not limited to this in the embodiments of the present disclosure.

[0084] Figure 5 FIG. 1 is a schematic diagram of an example of a sensor unit according to at least one embodiment of the present disclosure. Figure 5 As shown, the sensor unit according to at least one embodiment of the present disclosure may include a first sensor electrode 121, a second sensor electrode 122 and a first light sensing layer 123. The first light sensing layer 123 is electrically connected to the first sensor electrode 121 and the second sensor electrode 122, and is sandwiched between the first sensor electrode 121 and the second sensor electrode 122.

[0085] The materials of the first sensor electrode 121 and the second sensor electrode 122 may be the same or different, and both may be metals, alloys, conductive oxides, conductive polymers, or a combination thereof.

[0086] For example, the first sensor electrode 121 and the second sensor electrode 122 may be formed of different materials. Examples of the material of one of the first sensor electrode 121 and the second sensor electrode 122 may include, but are not limited to, nickel (Ni), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), selenium (Se), rhodium (Rh), ruthenium (Ru), iridium (Ir), rhenium (Re), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum (Al), iron (Fe), cobalt (Co), copper (Cu), and alloys and oxides thereof, or tin oxide, indium tin oxide (ITO), zinc oxide, titanium oxide, PEDOT:PSS (3,4-ethylenedioxythiophene:poly (4-styrenesulfonic acid)), PANI (polyaniline), etc.

[0087] For example, examples of materials of the other of the first sensor electrode 121 and the second sensor electrode 122 may include, but are not limited to, magnesium (Mg), calcium (Ca), indium (In), lithium (Li), aluminum (Al), silver (Ag) or their alloys or fluorides, such as magnesium (Mg)-silver (Ag) alloys, lithium (Li)-fluorine compounds, lithium (Li)-oxygen (O) compounds, etc.

[0088] In at least one embodiment, the first sensor electrode 121 and the second sensor electrode 122 may also be formed of the same material, which is not limited in the embodiments of the present disclosure.

[0089] The first sensor electrode 121 and the first detection electrode 111 may be formed of the same or different materials, and the second sensor electrode 122 and the second detection electrode 112 may be formed of the same or different materials, which is not limited in the embodiments of the present disclosure.

[0090] In at least one embodiment of the present disclosure, the electrode located on the light-incoming side of the first light-sensing layer 123 may be at least partially transparent. For example, the first sensor electrode 121 may be at least partially transparent; or, the second sensor electrode 122 may be at least partially transparent; or, both the first sensor electrode 121 and the second sensor electrode 122 may be at least partially transparent.

[0091] The first sensor electrode 121, the first light sensing layer 123 and the second sensor electrode 122 can form a photodiode. Voltage can be applied to the first sensor electrode 121 and the second sensor electrode 122 so that the photodiode has a small saturated reverse leakage current when there is no light irradiating the first light sensing layer 123, and the photodiode is cut off at this time; when the first light sensing layer 123 is irradiated by light, the saturated reverse leakage current greatly increases to form a photocurrent, which changes with the change of the incident light intensity.

[0092] The first photosensitive layer 123 may include semiconductor materials such as silicon and germanium, for example, PN type, PIN type, etc. In at least one embodiment, the first photosensitive layer 123 may be, for example, a PIN junction. For example, the first photosensitive layer 123 may include a second P-type semiconductor sublayer 1231, a second intrinsic sublayer 1232, and a second N-type semiconductor sublayer 1233 stacked in sequence. The second P-type semiconductor sublayer 1231, the second intrinsic sublayer 1232, and the second N-type semiconductor sublayer 1233 may all be made of conventional materials in the art, and the embodiments of the present disclosure are not limited thereto.

[0093] The first P-type semiconductor sublayer 1141 and the second P-type semiconductor sublayer 1231 may be formed of the same or different materials; the second intrinsic sublayer 1142 and the second intrinsic sublayer 1232 may be formed of the same or different materials; and the first N-type semiconductor sublayer 1143 and the second N-type semiconductor sublayer 1233 may be formed of the same or different materials, which is not limited in the embodiments of the present disclosure.

[0094] In the case where the first sensor electrode 121 or the second sensor electrode 122 or the first sensor electrode 121 and the second sensor electrode 122 are at least partially transparent, the first light sensing layer 123 may be allowed to be irradiated by light. For example, when the sensor device is used for fingerprint recognition, light emitted from the display panel or a separately provided light source for fingerprint recognition may pass through the first sensor electrode 121 or the second sensor electrode 122 to irradiate the first light sensing layer 123 after being reflected by the finger. Since the first sensor electrode 121 and the second sensor electrode 122 are electrically connected to the first light sensing layer 123, the charge accumulated in the first light sensing layer 123 due to light irradiation may be read out via the first sensor electrode 121 or the second sensor electrode 122.

[0095] Figure 6 is along Figure 1A As an example, in Figure 6 In the example, the detection unit A is shown as having Figure 3 However, it should be understood that in other embodiments, the detection unit A may also have Figure 2 The structure shown, Figure 4The embodiments of the present disclosure are not limited to the structure shown or other suitable structures.

[0096] like Figure 6 As shown, according to at least one embodiment of the present disclosure, the detection unit A may further include a first switch transistor 210. The first switch transistor 210 may include a first active layer 211, a first electrode 212, a first gate electrode 213, and a second electrode 214. The gate insulation layer 310 covers the first active layer 211, and the first active layer 211 is electrically insulated from the first gate electrode 213 by the gate insulation layer 310. The first interlayer insulation layer 320 covers the first gate electrode 213. The first electrode 212 and the second electrode 214 of the first switch transistor 210 are on a side of the first interlayer insulation layer 320 away from the gate insulation layer 310, and the first electrode 212 and the second electrode 214 of the first switch transistor 210 are electrically connected to the first active layer 211 through vias in the first interlayer insulation layer 320 and the gate insulation layer 310.

[0097] The second interlayer insulating layer 330 covers the first electrode 212 and the second electrode 214 of the first switch transistor 210. Figure 6 In the detection unit A, the second detection electrode 112 is electrically connected to the first electrode 212 of the first switch transistor 210 through a via hole in the second interlayer insulating layer 330 .

[0098] like Figure 6 As shown, according to at least one embodiment of the present disclosure, the sensor unit B may further include a second switch transistor 220. The second switch transistor 220 may include a second active layer 221, a first electrode 222, a second gate 223 and a second electrode 224.

[0099] like Figure 6 As shown, part or all of the corresponding film layers of the first switch transistor 210 and the second switch transistor 220 can be arranged in the same layer. For example, the first active layer 211 and the second active layer 221 can be arranged in the same layer. For example, the first gate 213 and the second gate 223 can be arranged in the same layer. For example, the first electrode 212 of the first switch transistor 210 and the first electrode 222 of the second switch transistor 220 can be arranged in the same layer. For example, the second electrode 214 of the first switch transistor 210 and the second electrode 224 of the second switch transistor 220 can be arranged in the same layer. By arranging the first switch transistor 210 and the second switch transistor 220 in the same layer, the film layer arrangement of the sensor device can be simplified and the thickness of the sensor device can be reduced. However, it should be understood that in other embodiments, part or all of the corresponding film layers of the first switch transistor 210 and the second switch transistor 220 can be arranged in different layers, and the embodiments of the present disclosure are not limited to this.

[0100] It should be understood that in the embodiments of the present disclosure, "same-layer arrangement" or "same-layer formation" and similar expressions refer to the use of the same film-forming process to form a film layer for forming a specific pattern, and then using the same mask to form a layer structure through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0101] In the embodiments of the present disclosure, the patterning or patterning process may include only the photolithography process, or include the photolithography process and the etching step, or may include other processes such as printing and inkjetting for forming a predetermined pattern. The photolithography process refers to a process including film formation, exposure, and development, and a pattern is formed using a photoresist, a mask, an exposure machine, etc. The corresponding patterning process can be selected according to the structure formed in the embodiments of the present disclosure.

[0102] like Figure 6 As shown, in the case where the corresponding film layers of the first switch transistor 210 and the second switch transistor 220 are arranged in the same layer, the gate insulating layer 310 may also cover the second active layer 221, and the second active layer 221 is electrically insulated from the second gate 223 by the gate insulating layer 310. The first interlayer insulating layer 320 covers the second gate 223. The first electrode 222 and the second electrode 224 of the second switch transistor 220 are on the side of the first interlayer insulating layer 320 away from the gate insulating layer 310, and the first electrode 222 and the second electrode 224 of the second switch transistor 220 are electrically connected to the second active layer 221 through the via holes in the first interlayer insulating layer 320 and the gate insulating layer 310.

[0103] The second interlayer insulating layer 330 covers the first electrode 222 and the second electrode 224 of the second switch transistor 220. Figure 6 In the sensor unit B, the second sensor electrode 122 is electrically connected to the first electrode 222 of the second switch transistor 220 through a via hole in the second interlayer insulating layer 330 .

[0104] It should be noted that the transistors used in the embodiments of the present disclosure may be thin film transistors or field effect transistors or other switching devices with the same characteristics, and the embodiments of the present disclosure are described by taking thin film transistors as examples. The source and drain of the transistor used here may be symmetrical in structure, so the source and drain may have no difference in structure.

[0105] In the embodiments of the present disclosure, in order to distinguish the two electrodes (ie, the source and the drain) of the transistor except the gate, one of the electrodes is directly described as the first electrode and the other as the second electrode.

[0106] The sensor device according to at least one embodiment of the present disclosure may further include a first gate signal line and a first signal readout line, wherein the first gate signal line is electrically connected to a gate of the first switch transistor, and the first signal readout line is electrically connected to a second electrode of the first switch transistor.

[0107] Figure 7 is a top view of the first detection zone according to at least one embodiment of the present disclosure. Figure 7 As shown, the sensor device according to at least one embodiment of the present disclosure may further include first gate signal lines G1-Gm and first signal reading lines R1-Rn. Figure 7 In the illustrated embodiment, the first detection area includes a plurality of detection units A, which are arranged in an array having m rows and n columns (m and n are positive integers and at least one of them is greater than 1). In addition, the first detection area also includes a plurality of first switch transistors 210, which are also arranged in an array having m rows and n columns. The plurality of first switch transistors 210 are electrically connected to the plurality of detection units A in a one-to-one correspondence, for example, the first electrode of the first switch transistor 210 is electrically connected to the second detection electrode of the detection unit A.

[0108] Each first gate signal line G is electrically connected to the gates of a row of first switch transistors 210. Each first signal read line R is electrically connected to a column of first switch transistors 210. For example, a second electrode of each first switch transistor 210 is electrically connected to the first signal connection line R.

[0109] For example, the first gate signal lines G1-Gm are all connected to the first row scanning circuit 401 to receive the scanning signal. The first switch transistor 210 can be turned on or off under the control of the scanning signal.

[0110] For example, the first signal reading lines R1 -Rn are all connected to the first signal processing circuit 402 to transmit the first signal detected by the detection unit A to the first signal processing circuit 402 .

[0111] Figure 8 is a top view of the second detection zone according to at least one embodiment of the present disclosure. Figure 8 As shown, the sensor device according to at least one embodiment of the present disclosure may further include second gate signal lines GL1-GLi and first signal reading lines RL1-RLj. Figure 8In the illustrated embodiment, the second detection area includes a plurality of sensor units B, which are arranged in an array having i rows and j columns (i and j are positive integers and at least one of them is greater than 1). In addition, the second detection area also includes a plurality of second switch transistors 220, which are also arranged in an array having i rows and j columns. The plurality of second switch transistors 220 are electrically connected to the plurality of sensor units B in a one-to-one correspondence, for example, the first electrode of the second switch transistor 220 is electrically connected to the second sensor electrode of the sensor unit B.

[0112] Each second gate signal line GL is electrically connected to gates of a row of second switch transistors 220. Each second signal read line RL is electrically connected to a column of second switch transistors 220. For example, a second electrode of each second switch transistor 220 is electrically connected to a second signal connection line RL.

[0113] For example, the second gate signal lines GL1-GLi are all connected to the second row scanning circuit 501 to receive the scanning signal. The second switch transistor 220 can be turned on or off under the control of the scanning signal.

[0114] For example, the second signal reading lines RL1 -RLj are all connected to the second signal processing circuit 502 to transmit the second signal detected by the sensor unit B to the second signal processing circuit 502 .

[0115] In addition, at least part of the first gate signal lines G in the first detection area can also be shared as the second gate signal lines in the second detection area, and the first row scanning circuit 401 can also be shared as the second row scanning circuit 501, so that a row of detection units A and a row of sensor units B connected to the shared first gate signal lines G receive the same scanning signal from the first row scanning circuit 401. Of course, in other embodiments, at least part of the second gate signal lines GL in the second detection area can also be shared as the first gate signal lines in the first detection area, and the second row scanning circuit 501 can be shared as the first row scanning circuit 401, which will not be described in detail herein.

[0116] In addition, the first signal processing circuit 402 and the second signal processing circuit 502 may also be integrated into the same signal processing circuit, which is not limited in the embodiments of the present disclosure.

[0117] It should be understood that the first row scanning circuit 401, the first signal processing circuit 402, the second row scanning circuit 501 and the second signal processing circuit 502 may not be included in the sensor device, but may be implemented by a circuit outside the sensor device, which is not limited in the embodiments of the present disclosure.

[0118] In at least one embodiment of the present disclosure, the detection unit A in the first detection area and the sensor unit B in the second detection area may receive substantially the same power supply signal. For example, the first detection electrode of the detection unit A and the first sensor electrode of the sensor unit B may be connected to the same power supply through a power line to receive the same power supply signal. The fluctuation of the power supply signal of the detection unit A in the first detection area and the fluctuation of the power supply signal of the sensor unit B in the second detection area are the same, so that the electrical common mode noise of the first signal detected by the detection unit A in the first detection area is the same as the electrical common mode noise of the second signal detected by the sensor unit B in the second detection area. Therefore, based on the first signal detected by the detection unit A in the first detection area, a noise reduction operation may be performed on the second signal detected by the sensor unit B in the second detection area to reduce the signal noise of the second signal and improve the signal-to-noise ratio. In addition, since the use of shading metal is avoided, the display effect will not be affected even when the sensor device according to the embodiment of the present disclosure is set in the display area of ​​the display panel.

[0119] In at least one embodiment, the noise reduction operation may include, for example, subtracting the first signal from the second signal, however, it should be understood that the embodiments of the present disclosure are not limited thereto.

[0120] like Figure 6-8 As shown, in at least one embodiment of the present disclosure, the first detection electrode 111 and the first sensor electrode 121 can be formed in the same layer and have the same shape and size, and the second detection electrode 112 and the second sensor electrode 122 can be formed in the same layer and have the same shape and size, so as to better perform noise reduction operations, improve the preparation process compatibility of the detection unit and the sensor unit, and simplify the manufacturing process of the sensor device.

[0121] In addition, if Figure 6 As shown, in at least one embodiment of the present disclosure, when the detection unit A includes the second photosensitive layer 114, the first photosensitive layer 123 and the second photosensitive layer 114 can also be formed in the same layer and have the same shape and size, so as to better perform noise reduction operations, improve the preparation process compatibility of the detection unit and the sensor unit, and simplify the manufacturing process of the sensor device.

[0122] Fig. 9 is a schematic diagram of the structure of an electronic device according to at least one embodiment of the present disclosure. Fig. 9 As shown, the electronic device 20 according to at least one embodiment of the present disclosure may include a sensor device 21 and a signal processing device 22. The sensor device 21 may be a sensor device according to any of the above embodiments.

[0123] The signal processing device 22 is signal-connected to the sensor device 21, and the signal processing device 22 is configured to obtain a first signal through at least one detection unit of a first detection zone of the sensor device and obtain a second signal through at least one sensor unit of a second detection zone of the sensor device, and perform a noise reduction operation on the second signal by using the first signal as a common mode noise signal of the second signal. The noise reduction operation may be the same as the above-mentioned noise reduction operation, and the embodiments of the present disclosure will not be described in detail.

[0124] In at least one embodiment, Fig. 9 As shown, the electronic device 20 according to at least one embodiment of the present disclosure may further include a display panel 23 .

[0125] Fig. 10A is a top view of a display panel 23 according to at least one embodiment of the present disclosure. Fig. 10B is another top view of the display panel 23 according to at least one embodiment of the present disclosure.

[0126] like Fig. 10A and Fig. 10B As shown, the display panel 23 may include a display area DA and a peripheral area PA disposed around the display area DA. Fig. 10A As shown, the sensor device 21 can be arranged in the display area DA, for example. Fig. 10B As shown, the sensor device 21 can be arranged, for example, in the peripheral area PA.

[0127] The display panel 23 may be, for example, a liquid crystal display panel, an organic light emitting diode display panel, a micro light emitting diode display panel, etc., which is not limited in the embodiments of the present disclosure.

[0128] For example, the electronic device 20 may include: electronic paper, mobile phones, tablet computers, televisions, monitors, laptop computers, digital photo frames, navigators, watches and other products or components.

[0129] Fig.11A is along Fig. 10A The cross-sectional view of the line S-S' in FIG. Fig.11A As shown, the sensor device 21 can be integrated in the display panel 23. The display panel 23 may include a display driving transistor 230 and a light-emitting unit, which may be an organic light-emitting unit, a quantum dot light-emitting unit, etc. The following description takes the light-emitting unit as an organic light-emitting unit 240 as an example, but the embodiments of the present disclosure are not limited to this. The display driving transistor 230 is electrically connected to the organic light-emitting unit 240 to drive the organic light-emitting unit 240 to emit light. Fig.11A In the illustrated embodiment, the display panel 23 is shown as an organic light emitting diode display panel, however it should be understood that the embodiments of the present disclosure are not limited thereto.

[0130] like Fig.11A As shown, the display driving transistor 230 and the corresponding film layers of the first switch transistor 210 and the second switch transistor 220 of the sensor device 21 can be arranged in the same layer. For example, the active layer 231 of the display driving transistor 230 can be arranged in the same layer as the first active layer 211 of the first switch transistor 210 and the second active layer 221 of the second switch transistor 220. For example, the gate 233 of the display driving transistor 230 can be arranged in the same layer as the first gate 213 of the first switch transistor 210 and the second gate 223 of the second switch transistor 220. For example, the first electrode 231 of the display driving transistor 230 can be arranged in the same layer as the first electrode 212 of the first switch transistor 210 and the first electrode 222 of the second switch transistor 220. For example, the second electrode 234 of the display driving transistor 230 can be arranged in the same layer as the second electrode 212 of the first switch transistor 210 and the second electrode 222 of the second switch transistor 220. By arranging the display driving transistor 230 , the first switch transistor 210 and the second switch transistor 220 in the same layer, the film layer arrangement of the display panel can be simplified and the thickness of the sensor device can be reduced.

[0131] However, it should be understood that in other embodiments, part or all of the corresponding film layers of the display driving transistor 230 , the first switch transistor 210 , and the second switch transistor 220 may be disposed in different layers, and the embodiments of the present disclosure are not limited thereto.

[0132] The planar layer 340 may cover the detection unit A and the sensor unit B. The pixel defining layer 350 covers the planar layer 340. The organic light emitting unit 240 includes a stacked anode 241, an organic light emitting layer 242, and a cathode 243. The organic light emitting layer 242 is between the anode 241 and the cathode 243. The anode 241 may be electrically connected to the first pole 231 of the display driving transistor 230 via the switching electrode 251. A portion of the switching electrode 251 is on the second interlayer insulating layer 330, and another portion of the switching electrode 251 is electrically connected to the first pole 231 of the display driving transistor 230 through a via hole in the second interlayer insulating layer 330. A portion of the anode 241 is on the planar layer 340 and another portion of the anode 241 is electrically connected to the switching electrode through a via hole in the planar layer 340. The anode 241 and the organic light emitting layer 242 may be located in the opening of the pixel defining layer 350. However, it should be understood that the organic light emitting unit 240 may also be disposed in the same layer as the detection unit A and the sensor unit B. For example, the anode 241 is disposed in the same layer as the second detection electrode 112 and the second sensor electrode 122 , and the pixel defining layer 350 can directly cover the detection unit A and the sensor unit B without the planar layer 340 , which is not limited in the embodiments of the present disclosure.

[0133] The anode 241 may be formed of the same material as the second detection electrode 112 and the second sensor electrode 122. For example, examples of the material of the anode 241 may include, but are not limited to, nickel (Ni), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), selenium (Se), rhodium (Rh), ruthenium (Ru), iridium (Ir), rhenium (Re), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum (Al), iron (Fe), cobalt (Co), copper (Cu), and alloys and oxides thereof, or tin oxide, indium tin oxide (ITO), zinc oxide, titanium oxide, PEDOT:PSS (3,4-ethylenedioxythiophene:poly (4-styrenesulfonic acid)), PANI (polyaniline), etc.

[0134] The cathode 243 may be formed of the same material as the first detection electrode 111 and the first sensor electrode 121. For example, examples of the material of the cathode 243 may include, but are not limited to, magnesium (Mg), calcium (Ca), indium (In), lithium (Li), aluminum (Al), silver (Ag), or alloys or fluorides thereof, such as magnesium (Mg)-silver (Ag) alloys, lithium (Li)-fluorine compounds, lithium (Li)-oxygen (O) compounds, etc.

[0135] The organic light emitting layer 242 can emit red light, blue light, green light, yellow light, white light, etc., which is not limited in the embodiments of the present disclosure. The material of the organic light emitting layer 242 in the embodiments of the present disclosure can be selected according to the different colors of the emitted light.

[0136] In addition, as needed, the material of the organic light-emitting layer 242 of the embodiment of the present disclosure includes a fluorescent light-emitting material or a phosphorescent light-emitting material. At present, a doping system is generally used, that is, a doping material is mixed into the main light-emitting material to obtain a usable light-emitting material. For example, the main light-emitting material can be a metal complex material, anthracene derivatives, aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, benzenediamine derivatives, or triarylamine polymers, etc.; more specifically, for example, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (Balq), 9,10-di-(2-naphthyl)anthracene (ADN), 4,4'-di(9-carbazole)biphenyl (CBP), 4,4',4"-tri-9-carbazole triphenylamine (TCTA) or N,N-bis(α-naphthyl-phenyl)-4,4-diphenylamine (NPB), etc. The fluorescent light-emitting material or doping material includes, for example, coumarin dyes (coumarin 6, C-545T), quinacridone (DMQA), or 4-(dinitrile methylene)-2-methyl-6-(4-dimethylamino-phenylene)-4H-pyran (DCM) series, etc. The phosphorescent luminescent material or doping material includes, for example, luminescent materials based on metal complexes such as Ir, Pt, Ru, Cu, such as: FIrpic, Fir6, FirN4, FIrtaz, Ir(ppy)3, Ir(ppy)2(acac), PtOEP, (btp)2Iracac, Ir(piq)2(acac) or (MDQ)2Iracac, etc. In addition, the material of the organic light-emitting layer 242 of the embodiment of the present disclosure may also include a dual host and be doped.

[0137] In addition, the organic light-emitting unit 240 may further include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, etc., which will not be described in detail in the embodiments of the present disclosure.

[0138] For example, the cathode 243, the pixel defining layer 350 and the first sensor electrode 121 may be at least partially transparent to allow light reflected by the user's finger to illuminate the first light sensing layer 123, thereby enabling fingerprint recognition.

[0139] In at least one embodiment of the present disclosure, the sensor device 21 may also be attached to or directly prepared on the display panel 23 . Fig. 11B is along Fig. 10A Another cross-sectional view of the line S-S' in FIG. Fig. 11B As shown, the sensor device 21 may be located above the display panel 23. However, it should be understood that the sensor device 21 may also be located below the display panel 23, as long as the function of the sensor device 21 is not affected, and the embodiments of the present disclosure are not limited thereto.

[0140] It should be noted that, for the sake of clarity, the entire structure of the electronic device is not given. To achieve the necessary functions of the electronic device, those skilled in the art may set other structures not shown according to specific application scenarios, and the embodiments of the present disclosure are not limited to this. The technical effects of the electronic device provided by the embodiments of the present disclosure refer to the technical effects of the sensor device described in the above embodiments, which will not be repeated here.

[0141] Fig.12 is a schematic flow chart of a method for reducing signal noise according to at least one embodiment of the present disclosure. The method for reducing signal noise according to at least one embodiment of the present disclosure may be applicable to a sensor device according to any of the above embodiments.

[0142] like Fig.12 As shown, the method for reducing signal noise according to at least one embodiment of the present disclosure may include steps S602 to S606.

[0143] Step S602: obtaining a first signal through at least one detection unit in the first detection area. The detection unit may include a first detection electrode, a second detection electrode and a first insulating layer, and the first detection electrode is electrically insulated from the second detection electrode by the first insulating layer.

[0144] Step S604: obtaining a second signal through at least one sensor unit in the second detection area. The sensor unit includes a first sensor electrode, a second sensor electrode, and a second light sensing layer, and the second light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode.

[0145] Step S606: Perform a noise reduction operation on the second signal by using the first signal as a common mode noise signal of the second signal. The noise reduction operation may include, for example, subtracting the first signal from the second signal, but it should be understood that the embodiments of the present disclosure are not limited thereto.

[0146] There are a few points to note:

[0147] (1) The drawings of the embodiments of the present invention only relate to the structures related to the embodiments of the present invention, and other structures may refer to the general design.

[0148] (2) In the absence of conflict, the embodiments of the present invention and the features therein may be combined with each other to obtain new embodiments.

[0149] The above description is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. The protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A sensor device comprising a first detection area and a second detection area, in, The first detection zone includes at least one detection unit, The detection unit includes a first detection electrode and a second detection electrode facing each other and a first insulating layer. The first detection electrode is electrically insulated from the second detection electrode by the first insulating layer, The second detection zone includes at least one sensor unit, The sensor unit includes a first sensor electrode, a second sensor electrode and a first light sensing layer, The first light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode; The first detection area is around the second detection area and does not overlap with the second detection area; The detection unit further includes a second light-sensitive layer, the second light-sensitive layer is sandwiched between the first detection electrode and the second detection electrode, and the second light-sensitive layer is electrically insulated from the first detection electrode or the second detection electrode through the first insulating layer; The first photosensitive layer and the second photosensitive layer are both capable of generating electrical signals based on irradiated light.

2. The sensor device according to claim 1, wherein: The detection unit further includes a second insulating layer, and the second light sensing layer is electrically insulated from the second detection electrode by the second insulating layer.

3. The sensor device according to claim 1, wherein: The second light sensing layer includes a first P-type semiconductor sublayer, a first intrinsic sublayer, and a first N-type semiconductor sublayer sequentially stacked between the first detection electrode and the second detection electrode.

4. The sensor device according to claim 1, wherein: The first detection electrode is at least partially transparent; or The second detection electrode is at least partially transparent; or The first detection electrode and the second detection electrode are both at least partially transparent.

5. The sensor device according to claim 1, wherein: The detection unit further includes a first switch transistor, A first electrode of the first switch transistor is electrically connected to the first detection electrode or the second detection electrode.

6. The sensor device according to claim 5, further comprising a first gate signal line and a first signal reading line, in, The first gate signal line is electrically connected to the gate of the first switching transistor, and The first signal reading line is electrically connected to the second electrode of the first switch transistor.

7. The sensor device according to claim 1, wherein: The at least one detection unit includes a plurality of detection units, and the plurality of detection units are arranged in an array.

8. The sensor device according to claim 1, wherein: The first light sensing layer is sandwiched between the first sensor electrode and the second sensor electrode, and includes a second P-type semiconductor sublayer, a second intrinsic sublayer, and a second N-type semiconductor sublayer sequentially stacked between the first sensor electrode and the second sensor electrode.

9. The sensor device according to claim 1, wherein: The first sensor electrode is at least partially transparent; or The second sensor electrode is at least partially transparent; or The first sensor electrode and the second sensor electrode are each at least partially transparent.

10. The sensor device according to claim 1, wherein: The sensor unit further includes a second switching transistor, a first electrode of the second switching transistor being electrically connected to the first sensor electrode or the second sensor electrode.

11. The sensor device according to claim 10, further comprising a second gate signal line and a second signal reading line, The second gate signal line is electrically connected to the gate of the second switch transistor, and The second signal reading line is electrically connected to the second electrode of the second switch transistor.

12. The sensor device according to claim 1, wherein: The at least one sensor unit includes a plurality of sensor units, and the plurality of sensor units are arranged in an array.

13. The sensor device according to claim 1, wherein: The first detection electrode is formed in the same layer as the first sensor electrode and has the same shape and size, The second detection electrode is formed in the same layer as the second sensor electrode and has the same shape and size.

14. The sensor device according to claim 1, wherein: The first detection electrode is formed in the same layer as the first sensor electrode and has the same shape and size, The second detection electrode is formed in the same layer as the second sensor electrode and has the same shape and size, The first photosensitive layer and the second photosensitive layer are formed in the same layer and have the same shape and size.

15. An electronic device, comprising: The sensor device according to any one of claims 1 to 14; as well as A signal processing device is signal-connected to the sensor device and is configured to obtain a first signal through at least one detection unit in a first detection area and a second signal through at least one sensor unit in a second detection area of ​​the sensor device, and use the first signal as a common-mode noise signal of the second signal to perform a noise reduction operation on the second signal.

16. The electronic device according to claim 15, further comprising a display panel, wherein: The display panel includes a display area and a peripheral area arranged around the display area. The sensor device is disposed in the display area or in the peripheral area.

17. A method for reducing signal noise, used in the electronic device according to claim 15 or 16, comprising: Obtaining a first signal through at least one detection unit of the first detection zone, wherein the detection unit includes a first detection electrode, a second detection electrode and a first insulating layer, and the first detection electrode is electrically insulated from the second detection electrode by the first insulating layer; obtaining a second signal through at least one sensor unit in the second detection zone, wherein the sensor unit comprises a first sensor electrode, a second sensor electrode and a second light sensing layer, and the second light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode; and By using the first signal as a common mode noise signal of the second signal, a noise reduction operation is performed on the second signal.

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