High frequency power supply component and plasma processing device

Abstract

The present invention provides a high-frequency power supply component that reduces the heat load in a high-frequency transmission path. The high-frequency power supply component is used to supply high-frequency power and comprises: an inner conductor having a hollow interior; and an outer conductor disposed so as to surround the inner conductor. A refrigerant flow path is provided within the wall surface of at least one of the inner and outer conductors.

Description

Technical Field

[0001] The present invention relates to a high-frequency power supply component and a plasma processing device. Background Art

[0002] For example, Patent Document 1 discloses a plasma processing apparatus that includes a high-frequency power supply component that electrically connects a first high-frequency power supply and a second high-frequency power supply to a lower electrode, and applies high-frequency power to the lower electrode.

[0003] <Prior Art Literature>

[0004] <Patent Document>

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-21803 Summary of the Invention

[0006] <Problems to be Solved by the Invention>

[0007] The present invention provides a technology capable of reducing the heat load in a high-frequency transmission path.

[0008] <Methods used to solve the problem>

[0009] According to one embodiment of the present invention, a high-frequency power supply component is provided for supplying high-frequency power, the high-frequency power supply component comprising: an inner conductor which is hollow; and an outer conductor which is arranged so as to surround the inner conductor, wherein a refrigerant flow path is provided inside the wall surface of at least one of the inner conductor and the outer conductor.

[0010] <Effects of the Invention>

[0011] According to one aspect, the heat load in the high-frequency transmission path can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a diagram schematically showing a plasma processing apparatus according to one embodiment.

[0013] Figure 2 This is a diagram showing a high-frequency power feeding component according to one embodiment.

[0014] Figure 3 This is a diagram showing an example of a protrusion in a refrigerant flow path according to an embodiment.

[0015] Figure 4 This is a diagram showing an example of a 3D printer used for molding a high-frequency power supply component according to one embodiment. DETAILED DESCRIPTION

[0016] Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are given the same reference numerals, and repeated descriptions may be omitted.

[0017] [Plasma processing equipment]

[0018] In one embodiment of the plasma processing apparatus 10, a Figure 1 Provide explanation. Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus 10 according to an embodiment. Figure 1 The plasma processing apparatus 10 shown is a capacitively coupled plasma processing apparatus.

[0019] The plasma processing apparatus 10 includes a chamber body 12. The chamber body 12 has a generally cylindrical shape, and its internal space is provided as a chamber 12c. The chamber body 12 is formed of, for example, aluminum or stainless steel. The chamber body 12 is grounded. A plasma-resistant film is formed on the inner wall surface of the chamber body 12, that is, the wall surface that defines the chamber 12c. The film may be a ceramic film such as a film formed by anodizing or a film formed of yttrium oxide. An opening 12p is formed on the side wall of the chamber body 12. When a substrate W, such as a semiconductor wafer, is moved into or out of the chamber 12c, it passes through the opening 12p. A gate valve 12g is installed on the side wall of the chamber body 12 for opening and closing the opening 12p. It should be noted that the substrate W may be a generally disc-shaped plate formed of a material such as silicon.

[0020] A workbench 14 is provided in the chamber 12c. The workbench 14 is configured in the chamber 12c to support the substrate W. The workbench 14 is supported by a support portion 15. In one embodiment, the support portion 15 includes a first component 15a and a second component 15b. The first component 15a is formed of an insulator such as ceramic. The first component 15a has a generally cylindrical shape. The first component 15a extends upward from the bottom of the chamber body 12. The second component 15b is provided on the upper end of the first component 15a. The second component 15b is formed of an insulator such as ceramic. The second component 15b has a generally annular plate shape. That is, the second component 15b has a generally disk shape with an opening at its center. The workbench 14 is arranged on the second component 15b. The workbench 14 and the support portion 15 are combined together to ensure the airtightness of the space in the chamber body 12.

[0021] The cylindrical portion 16 extends upward from the bottom of the chamber body 12. It is formed of a conductor and has a generally cylindrical shape. It extends along the outer circumference of the first component 15a of the support portion 15. The potential of the cylindrical portion 16 is set to ground potential. An insulating member 17 is provided above the cylindrical portion 16. It is formed of an insulator such as quartz and has a generally cylindrical shape. It extends along the outer circumference of the worktable 14 and the second component 15b of the support portion 15. An exhaust path 18 is formed between the cylindrical portion 16 and the sidewalls of the chamber body 12, and between the insulating member 17 and the sidewalls of the chamber body 12.

[0022] A baffle 19 is provided in the exhaust path 18. The baffle 19 has a generally annular plate shape. The baffle 19 can be formed by, for example, coating an aluminum base material with a ceramic such as yttrium oxide. A number of through-holes are formed in the baffle 19. The inner edge of the baffle 19 is held between the cylindrical portion 16 and the insulating member 17. The outer edge of the baffle 19 is coupled to the side wall of the chamber body 12. Below the baffle 19, an exhaust pipe 20 is connected to the bottom of the chamber body 12. The exhaust pipe 20 is connected to an exhaust device 22. The exhaust device 22 includes a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump, which can reduce the pressure in the chamber 12c.

[0023] The plasma processing apparatus 10 further includes an upper electrode 30. The upper electrode 30 is disposed above the worktable 14. The upper electrode 30, together with a member 32, closes the upper opening of the chamber body 12. The member 32 is insulating. The upper electrode 30 is supported on the upper portion of the chamber body 12 by the member 32. It should be noted that when the first high-frequency power supply (described later) is electrically connected to the lower electrode of the worktable 14, the potential of the upper electrode 30 is set to ground potential.

[0024] The upper electrode 30 includes a top plate 34 and a support 36. The lower surface of the top plate 34 defines the chamber 12c. A plurality of gas ejection holes 34a are provided in the top plate 34. Each of the plurality of gas ejection holes 34a extends through the top plate 34 in the plate thickness direction (vertical direction). The top plate 34 is not limited to any material, but may be formed, for example, from silicon. Alternatively, the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum base material. This film may be a ceramic film such as a film formed by anodization or a film formed from yttrium oxide.

[0025] The support body 36 is a component that supports the top plate 34 in a detachable manner. The support body 36 can be formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided within the support body 36. A plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are connected to the plurality of gas ejection holes 34a. A gas inlet 36c for introducing gas into the gas diffusion chamber 36a is formed in the support body 36. The gas inlet 36c is connected to the gas supply pipe 38.

[0026] The gas supply pipe 38 is connected to the gas source group 40 via a valve group 42 and a flow controller group 44. The gas source group 40 includes multiple gas sources. The valve group 42 includes multiple valves, and the flow controller group 44 includes multiple flow controllers. The multiple flow controllers in the flow controller group 44 are mass flow controllers or pressure-controlled flow controllers. The multiple gas sources in the gas source group 40 are connected to the gas supply pipe 38 via corresponding valves in the valve group 42 and corresponding flow controllers in the flow controller group 44. The plasma processing apparatus 10 can supply gas from one or more selected gas sources from the multiple gas sources in the gas source group 40 to the chamber 12 c at individually adjusted flow rates.

[0027] The plasma processing apparatus 10 also includes a control unit 90. This control unit 90 is a computer that includes a processor, a storage device, an input device, a display device, and other components. It controls various components of the plasma processing apparatus 10. Specifically, the control unit 90 executes a control program stored in the storage device and controls various components of the plasma processing apparatus 10 based on recipe data stored in the storage device. Through control by the control unit 90, the plasma processing apparatus 10 executes the process specified by the recipe data.

[0028] [High-frequency power supply components]

[0029] Hereinafter, the working table 14 and the components of the plasma processing apparatus 10 associated with the working table 14 will be described in detail. Figure 1 Refer to Figure 2 . Figure 2 (a) shows a longitudinal sectional view of a high frequency power supply component 68 according to an embodiment. Figure 2 (b) shows a perspective view of a high-frequency power supply component 68 according to one embodiment.

[0030] like Figure 1As shown, the worktable 14 includes a lower electrode 50 and an electrostatic chuck 52. In one embodiment, the worktable 14 further includes a conductive member 54. The lower electrode 50 has a substantially disk shape and is formed from a conductor such as aluminum. A flow path 50f is formed within the lower electrode 50. Refrigerant is supplied to the flow path 50f from a cooling device 55 located outside the chamber body 12. The refrigerant supplied to the flow path 50f returns to the cooling device 55.

[0031] The conductive member 54 is disposed below the lower electrode 50. The conductive member 54 is formed of a conductor, such as aluminum. The conductive member 54 is electrically connected to the lower electrode 50. In one embodiment, the conductive member 54 has a generally annular plate shape. In one embodiment, the central axis of the conductive member 54, the central axis of the lower electrode 50, and the central axis of the electrostatic chuck 52 are a common central axis (hereinafter referred to as "axis AX"). It should be noted that, in one embodiment, axis AX also serves as the central axis of the chamber body 12 and chamber 12 c.

[0032] In one embodiment, the plasma processing apparatus 10 further includes a first high-frequency power supply 61 and a second high-frequency power supply 62. The first high-frequency power supply 61 and the second high-frequency power supply 62 are disposed outside the chamber body 12. The first high-frequency power supply 61 primarily generates a first high-frequency power supply that contributes to plasma generation. The frequency of the first high-frequency power supply 61 is, for example, 100 MHz. The first high-frequency power supply 61 is electrically connected to the lower electrode 50 via a matching circuit 65 of a matching unit 64 for impedance matching. The matching circuit 65 includes a circuit configured to match the output impedance of the first high-frequency power supply 61 with the impedance of the load side. It should be noted that the first high-frequency power supply 61 may also be connected to the upper electrode 30 via the matching circuit 65.

[0033] The second high-frequency power source 62 primarily outputs a second high-frequency signal that facilitates the introduction of ions into the substrate W. The second high-frequency signal has a frequency lower than that of the first high-frequency signal, for example, 13 MHz. The second high-frequency power source 62 is electrically connected to the lower electrode 50 via a matching circuit 66 of a matching unit 64. The matching circuit 66 includes a circuit configured to match the output impedance of the second high-frequency power source 62 with the impedance of the load side.

[0034] The plasma processing apparatus 10 also includes a high-frequency power supply component 68. The high-frequency power supply component 68 is formed of a conductor such as aluminum and has a generally cylindrical shape. The high-frequency power supply component 68 is provided to electrically connect the first high-frequency power supply 61 and the second high-frequency power supply 62 to the lower electrode 50. The high-frequency power supply component 68 extends from one side of the lower electrode 50 to the outside of the chamber body 12, with the outside of the chamber body 12 being curved.

[0035] In one embodiment, the upper end of the high-frequency power supply component 68 is positioned with the axis AX as its central axis. One end (the upper end) of the high-frequency power supply component 68 extends vertically and is connected to the lower electrode 50 via a joint component 71 provided in the opening of the centrally opened second component 15b. The high-frequency power supply component 68 bends approximately 90 degrees as it descends vertically from one end (the upper end) before extending horizontally to become the other end of the high-frequency power supply component 68. The other end of the high-frequency power supply component 68 is connected to the first high-frequency power source 61 and the second high-frequency power source 62 via a matching device 64. In one embodiment, the matching device 64 is provided to the side of the high-frequency power supply component 68. It should be noted that, in this embodiment, while the high-frequency power supply component 68 has a curved structure, it may also have a straight shape extending vertically without being curved.

[0036] like Figure 1 as well as Figure 2 As shown, in one embodiment, the high-frequency power supply component 68 includes an inner conductor 68a and an outer conductor 68b. The inner conductor 68a and the outer conductor 68b have a curved structure. The inner conductor 68a is formed of a conductor such as aluminum and has a hollow interior. The outer conductor 68b is formed of a conductor such as aluminum and has a hollow interior, and is positioned to surround the inner conductor 68a. The inner conductor 68a is embedded in the inner hole of the outer conductor 68b, with the upper end of the inner conductor 68a protruding from the outer conductor 68b. The inner conductor 68a and the outer conductor 68b are curved in the same direction.

[0037] The high-frequency current output from the first and second high-frequency power sources 61 and 62 flows from the matching box 64 through the surface of the internal conductor 68a toward the lower electrode 50. In other words, the internal conductor 68a serves as a transmission path for the high-frequency current supplied from the matching box 64 to the lower electrode 50. The external conductor 68b serves as a transmission path for the high-frequency current to return from the chamber body 12 to the ground potential region via the plasma.

[0038] The inner conductor 68a and the outer conductor 68b are coaxial. In one embodiment, the axis AX is the central axis of the inner conductor 68a and the outer conductor 68b at the upper portion of the inner conductor 68a and the upper portion of the outer conductor 68b. The potential of the outer conductor 68b is set to ground potential.

[0039] It should be noted that in this embodiment, although the inner conductor 68a and the outer conductor 68b have a curved structure, they can also be straight lines extending in the vertical direction without being curved. In addition, the cross-section of the inner conductor 68a and the outer conductor 68b is not limited to a circle and can also be a rectangle or an ellipse.

[0040] The electrostatic chuck 52 is provided on the lower electrode 50. The electrostatic chuck 52 is configured to hold the substrate W placed thereon. The electrostatic chuck 52 has a generally disc-shaped structure and includes a layer formed of an insulator such as ceramic. The electrostatic chuck 52 also includes an electrode 52a as an inner layer of the insulator layer. For example, when a DC voltage is applied to the electrode 52a, the electrostatic chuck 52 generates an electrostatic attraction. This electrostatic attraction allows the electrostatic chuck 52 to hold the substrate W. An edge ring 35 is disposed around the periphery of the substrate W, surrounding the substrate W. The edge ring 35 is also called a focus ring.

[0041] A heater may be provided within the electrostatic chuck 52. The heater may be a resistive heating element. The temperature of the substrate W placed on the workbench 14 is adjusted by the heater and the temperature of the refrigerant supplied to the flow path 50f. It should be noted that a gas line for supplying a heat-conducting gas, such as He gas, may be provided between the workbench 14 and the electrostatic chuck 52.

[0042] In this embodiment, in the high-frequency power supply component 68, a refrigerant flow path 78a is provided within the wall surface of the inner conductor 68a. Furthermore, a refrigerant flow path 78b is provided within the wall surface of the outer conductor 68b. However, the refrigerant flow path may be provided only within the wall surface of at least one of the inner conductor 68a and the outer conductor 68b.

[0043] exist Figure 2 In example (b), a refrigerant flow path 78a is provided within the wall of the inner conductor 68a, while the refrigerant flow path 78b within the wall of the outer conductor 68b is not shown. Refrigerant flow path 78a has a spiral structure. This allows the flow path length of refrigerant flow path 78a to be maximized within the wall of the inner conductor 68a, thereby improving cooling efficiency. Similarly, to improve cooling efficiency, the refrigerant flow path 78b formed within the wall of the outer conductor 68b preferably has a spiral structure. However, the structures of refrigerant flow paths 78a and 78b are not limited to this. For example, linear flow paths with branches can be formed within the walls of the inner and outer conductors 68a and 68b, or annular flow paths can be formed. Furthermore, refrigerant flow paths 78a and 78b can also partially protrude from the interior of the walls of the inner and outer conductors 68a and 68b.

[0044] Note that, in this embodiment, there are no irregularities on the surfaces of the inner conductor 68a and the outer conductor 68b as a high-frequency transmission path, but irregularities may exist on the surfaces of the inner conductor 68a and the outer conductor 68b.

[0045] It should be noted that when a DC voltage is applied to the lower electrode 50 and / or the edge ring 35, or when an AC voltage is applied to the heater in the electrostatic chuck 52, wiring can be provided in the hollow internal conductor 68a.

[0046] [Refrigerant flow path]

[0047] like Figure 1 As shown, the high-frequency power supply component 68 includes insulating components 69 and 70 for supporting an inner conductor 68a and an outer conductor 68b. The inner conductor 68a and the outer conductor 68b are formed of metal. The inner conductor 68a serves as a high-frequency supply path, while the outer conductor 68b serves as a high-frequency return path. Therefore, it is important to prevent the inner and outer conductors 68a and 68b from being electrically connected. Therefore, insulating components 69 and 70 are interposed between the inner and outer conductors 68a and 68b to insulate and prevent electrical connection.

[0048] For example, as an example of an element structure formed on substrate W, there is a process for etching a relatively deep hole. In such a process, the high-frequency power output per unit time from the first high-frequency power source 61 and / or the second high-frequency power source 62 is high, increasing the heat load on the high-frequency power supply component 68, the high-frequency transmission path. In this embodiment, even in such a process where high-output high-frequency power is applied, the flow of refrigerant through the refrigerant flow paths 78a and 78b reduces the temperature rise of the inner conductor 68a and the outer conductor 68b. This suppresses the temperature rise of the insulating components 69 and 70, allowing the insulating components 69 and 70 to be used below the allowable temperature of the resin material constituting the components.

[0049] Although Figure 1 Although omitted in the figure, various components are assembled around the insulating members 69 and 70. Therefore, if the heat load on the high-frequency power supply member 68 increases, thermal expansion caused by the temperature rise may cause gaps to form at the engaging portions of the assembled components, thereby increasing the contact resistance of the electrical contacts at the contact points, and sometimes causing burns due to abnormal heating at the contact points.

[0050] In contrast, in this embodiment, refrigerant flows through refrigerant passages 78a and 78b, reducing the heat load on the high-frequency power supply component 68 and suppressing temperature increases. This prevents loosening of the joints between the insulating components 69 and 70 and surrounding components due to temperature increases. Consequently, the contact resistance of the electrical contacts is reduced, preventing burnout of the contacts. Furthermore, the insulating components 69 and 70 can be prevented from melting beyond their melting points.

[0051] As the refrigerant flowing through refrigerant flow paths 78a and 78b, when the refrigerant is used at temperatures above 100°C, a Freon-based refrigerant, such as salt water, can be used. However, water, which boils at 100°C, cannot be used. On the other hand, when the refrigerant is used at temperatures below 100°C, cooling water or air cooling can be used as the refrigerant. In the case of air cooling, air, dry air, or an inert gas such as N2 gas can be used.

[0052] like Figure 1 As shown, the refrigerant is controlled to a predetermined temperature in the cooling device 55 and supplied to the refrigerant flow paths 78a and 78b. Furthermore, the refrigerant is supplied from the cooling device 55 to the flow path 50f inside the lower electrode 50. The flow path 50f inside the lower electrode 50 may or may not be connected to the refrigerant flow paths 78a and 78b.

[0053] Protrusions may be formed inside the refrigerant flow paths 78a and 78b. Figure 3 This is a diagram showing an example of a protrusion 78a1 in a refrigerant flow path 78a formed in an internal conductor 68a according to one embodiment. Figure 3 (a) shows an example of a protrusion in the refrigerant flow path 78a. The shape of the protrusion in the refrigerant flow path 78a will be described below. The refrigerant flow path 78b may also be formed with a protrusion similar to the refrigerant flow path 78a.

[0054] An example of the shape of the protrusion in the refrigerant flow path 78a is Figure 3 It is shown in (a) to (c). Figure 3 (a) to (c) show the surface that cuts the refrigerant flow path 78a perpendicular to the flow direction of the refrigerant. Figure 3 In (a), the plurality of protrusions 78a1 are formed into a convex plate shape. The refrigerant flows between the plurality of convex plate-shaped protrusions 78a1, thereby increasing the surface area of ​​the refrigerant contact and improving the heat dissipation efficiency. However, the protrusions 78a1 inside the refrigerant flow path 78a are not limited to convex plate-shaped components, and can be Figure 3 (b) as shown in the grid, or Figure 3 The columnar shape shown in (c) can also be other shapes.

[0055] [Manufacturing of high-frequency power supply components]

[0056] Conventionally, the inner conductor 68a and the outer conductor 68b are manufactured separately by cutting, etc. Therefore, the inner conductor 68a needs to be inserted into the outer conductor 68b after manufacturing the inner conductor 68a and the outer conductor 68b, which places restrictions on the shapes of the inner conductor 68a and the outer conductor 68b.

[0057] In contrast, if the high-frequency power supply component 68 is molded using a 3D printer, there are no manufacturing constraints for subsequently inserting the internal conductor 68a into the external conductor 68b, thereby increasing the design freedom in the shape of the internal conductor 68a and the external conductor 68b.

[0058] The high-frequency power supply component 68 can be manufactured using casting, rather than a 3D printer. However, it is preferable that the high-frequency power supply component 68 of this embodiment, which has a structure in which a refrigerant flow path is formed within the inner conductor 68a and the outer conductor 68b, and a protruding load is further formed within the refrigerant flow path, be molded using a 3D printer.

[0059] For an example of a 3D printer for molding a high frequency power supply component 68, refer to Figure 4 Provide explanation. Figure 4 This is a diagram showing an example of a 3D printer 200 used for molding the high-frequency power supply component 68 according to one embodiment.

[0060] In the 3D printer 200 of this embodiment, three-dimensional data for forming the high-frequency power supply component 68 is stored in a storage unit such as RAM 256 as a three-dimensional object, and the high-frequency power supply component 68 is manufactured based on the three-dimensional data. The high-frequency power supply component 68 is placed on a mounting surface of a work table 202 included in a work table. The work table 202 can be raised and lowered, for example, gradually lowered, depending on the formation of the high-frequency power supply component 68.

[0061] In this embodiment, raw material storage section 203, contained within the work table, contains powders of the raw materials for forming high-frequency power supply component 68. The raw materials for forming high-frequency power supply component 68 are not limited to powder form; they can also be in a linear form. Within chamber 210, the raw material powders are supplied while being irradiated with energy beams, thereby melting the raw material powders. In this embodiment, laser A (optical laser) is used as the irradiated energy beam.

[0062] Laser light A is output from light source 206 and irradiated to a predetermined position by laser scanning device 204, which performs two-dimensional scanning. Light source 206 and laser scanning device 204 are preferably disposed outside chamber 210. Laser scanning device 204 is moved to a predetermined position by laser driving unit 208 driven by second control unit 250.

[0063] The laser scanning device 204 scans the laser beam A in at least two dimensions (XY) on the stage 202. For example, the laser scanning device 204 is controlled so that the irradiation point of the laser beam A moves on the stage 202 based on three-dimensional data showing the three-dimensional structure of the refrigerant flow paths 78a and 78b within the inner conductor 68a and the outer conductor 68b.

[0064] The second control unit 250 controls the roller drive unit 207 to drive the roller 205. This supplies powdered materials for the inner conductor 68a and outer conductor 68b to the laser scanning space 209. It should be noted that the temperature of the raw material storage unit 203 is preferably controlled by a heating mechanism. Furthermore, it is preferable that a mechanism for supplying inert gas and exhausting the interior of the chamber 210 be provided in the chamber 210.

[0065] Laser light A, scanned two-dimensionally by laser scanning device 204, is irradiated onto the irradiation area above worktable 202 through the top of chamber 210, for example, laser transmission window 211 provided above worktable 202. Laser light A heats the powder, causing it to melt and harden as shown in B, thereby forming high-frequency power supply component 68 including inner conductor 68a and outer conductor 68b, which are formed with refrigerant flow paths 78a and 78b.

[0066] The second control unit 250 includes a CPU 252, a ROM 254, and a RAM 256. The second control unit 250 controls the supply of raw material powder from the raw material storage unit 203 and the raising and lowering of the work table 202. Furthermore, the second control unit 250 controls the lighting of the light source 206, the scanning of the laser scanning device 204, and the roller drive unit 207 and the laser drive unit 208. Thus, the second control unit 250 controls the operation of the manufacturing base 117.

[0067] The control program executed by the CPU 252 is stored, for example, in the ROM 254. The CPU 252 executes the control program based on the three-dimensional data stored in the RAM 256, thereby controlling the shape of the high-frequency power supply component 68. It should be noted that the control program can be stored in a fixed storage medium or in a removable, computer-readable storage medium such as a flash memory, optical (or magnetic) disk, or the like.

[0068] The second control unit 250 also includes a display 258 and an input device 260 such as a keyboard and pointing device. The display 258 is used to display the progress of the shaping process of the high-frequency power supply unit 68. The input device 260 is used to issue commands such as starting and stopping the shaping process of the high-frequency power supply unit 68 and input control parameters for setting.

[0069] According to the plasma processing apparatus 10 of this embodiment, which includes the high-frequency power supply component 68 and the high-frequency power supply component 68 manufactured as described above, refrigerant flow paths 78a and 78b are formed within the inner conductor 68a and the outer conductor 68b. Thus, by allowing refrigerant to flow through the refrigerant flow paths 78a and 78b, the heat load on the high-frequency power supply component 68 and the surrounding high-frequency transmission path can be reduced.

[0070] The high-frequency power supply component and plasma processing apparatus according to one embodiment of the present invention should be considered in all respects as examples and not as limitations. The above-described embodiment may be modified and improved in various ways without departing from the scope of the appended claims and their gist. The matters described in the various embodiments described above may be modified and combined within the scope of non-inconsistency.

[0071] For example, although the embodiment has been described in which the high-frequency power supply component 68 is used as a transmission path for supplying high-frequency power to the lower electrode 50 , the present invention is not limited thereto and may also be used as a transmission path for supplying high-frequency power to the upper electrode 30 .

[0072] The high-frequency power supply component of the present invention is also applicable to any type of plasma processing equipment including Atomic Layer Deposition (ALD) equipment, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

Claims

1. A high-frequency power supply component for supplying high-frequency power, the high-frequency power supply component comprising: an inner conductor forming a hollow; and The outer conductor is arranged so as to surround the inner conductor. A refrigerant flow path is provided inside a wall between an outer peripheral surface and an inner peripheral surface of at least one of the inner conductor and the outer conductor.

2. The high-frequency power supply component according to claim 1, wherein: The internal conductor is used to supply the high-frequency power to the load. The outer conductor is provided to return the high-frequency power fed back from the load to a ground potential region.

3. The high-frequency power supply component according to claim 1 or 2, wherein: The refrigerant flow path has a spiral structure.

4. The high-frequency power supply component according to claim 3, wherein: A protrusion is formed inside the refrigerant flow path.

5. The high-frequency power supply component according to claim 4, wherein: The protrusions are lattice-shaped, column-shaped or convex-shaped components.

6. The high-frequency power supply component according to claim 1 or 2, wherein: The inner conductor and the outer conductor have a coaxial structure.

7. The high-frequency power supply component according to claim 1 or 2, wherein: The inner conductor and the outer conductor have a bent structure.

8. A plasma processing apparatus comprising a high-frequency power supply component for supplying high-frequency power. The high frequency power supply component has: an inner conductor forming a hollow; and The outer conductor is arranged so as to surround the inner conductor. A refrigerant flow path is provided inside a wall between an outer peripheral surface and an inner peripheral surface of at least one of the inner conductor and the outer conductor.

9. The plasma processing apparatus according to claim 8, wherein: The internal conductor is used to supply the high-frequency power to the load. The outer conductor is provided to return the high-frequency power fed back from the load to a ground potential region.

10. The plasma processing apparatus according to claim 8 or 9, wherein: The high-frequency power supply component is connected to the lower electrode and / or the upper electrode.

Images