Heated narrow-band infrared light emitting device

Abstract

The present invention is a heated narrow-band infrared light emitting device. In some examples, the infrared light emitting device has a heating layer sandwiched between top and bottom optical layers, which only allow narrow-band infrared light to pass through. A reflective layer can be further provided below the bottom optical layer. This configuration greatly reduces energy loss and can be manufactured using a simple and low-cost method.

Description

Technical Field

[0001] The invention relates to a heating type narrow-band infrared light emitting device. Background Art

[0002] One traditional method of generating mid-infrared light is to use a heated body to emit blackbody radiation, which is thermal electromagnetic radiation that is in thermodynamic equilibrium with the environment inside or around the heated body. However, blackbody radiation has a very wide wavelength range. For applications that only require a narrow wavelength band or do not want to be interfered by a wide wavelength band, blackbody radiation does not meet the requirements. Therefore, a method to limit the infrared emission light to a narrow bandwidth range is highly desired.

[0003] Nonlinear optics can generate narrowband spectra using laser pumped optical parametric processes. An optical parametric oscillator (OPO) is a parametric oscillator that oscillates at an optical frequency. It converts an input laser wave of frequency ωp into two output waves of lower frequencies (ωs, ωi) through second-order nonlinear optical interactions. For example, U.S. Patent No. 9,685,753 B2 discloses a tunable optical parametric oscillator (OPO) that is tuned by selecting a desired signal / idler combination through a set temperature of a nonlinear element, and achieves narrowband operation by adjusting the set temperature of a birefringent filter in the OPO to match the selected signal / idler combination, wherein a wide and stable adjustability is obtained by matching at least two different set temperatures of the nonlinear element to a single common set temperature of the birefringent filter. However, nonlinear optical elements are expensive and inconvenient to operate.

[0004] Another way to emit narrow-band infrared light is to use quantum cascade lasers (QCL). [1-3] , which realizes the emission of laser light by transitioning between sub-bands in repeated stacks of semiconductor multiple quantum well heterostructures. For example, U.S. Patent No. 9,912,119B2 discloses a quantum cascade laser, which includes a semiconductor substrate and a multi-level active layer having an emission layer and an injection layer. The active layer is capable of generating a first pump light with a frequency of ω1 and a second pump light with a frequency of ω2, and is capable of generating an output light with a difference frequency ω by difference frequency generation. However, the materials required to grow QCL are expensive. In addition, QCLs usually require cooling devices, so they are very expensive and difficult to operate.

[0005] Mid-infrared semiconductor light emitting diodes (LEDs) emit infrared light through the recombination of electron-hole pairs in the energy gap of transition materials. For example, U.S. Patent US08309980B2 discloses an infrared light emitting device that can suppress dark current and diffusion current caused by thermally excited holes. Seungyong Jung et al. [4] Design of dual-wavelength type I quantum well light-emitting diodes operating at wavelengths between 2 μm and 3–3.4 μm. O. Morohara et al. [5] A highly luminous diode with a peak emission light of 3.3 μm for detecting CH4 gas is disclosed. RJ Ricker et al. [6] InAs / GaSb type-II superlattice light-emitting diodes are disclosed, which can emit mid-infrared light over the entire 3–5 μm band.

[0006] References: [1] Hiroyuki YOSHINAGA et al., Mid-infrared Quantum CascadeLaser Operable in High Temperature (200℃), SEI TECHNICAL REVIEW, No. 90, 94-98 (2020); [2] Andreas Hugi et al., Mid-infrared frequency comb based on a quantumcascade laser,Nature,Vol.492,229-233(2012);[3]Bo Meng et al.,Mid-infraredfrequency comb from a ring quantum cascade laser,Optical Society of America,Vol.7,No.2,162-167(2020);[4]Seungyong Jung et al.,Dual wavelength GaSb basedtype I quantum well mid-infrared light emitting diodes,.Applied PhysicsLetters 96,191102(2010),doi:10.1063 / 1.3425899;[5]O.Morohara et al.High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gassensors,Journal of Crystal Growth 518(2019)14-17;[6]RJRicker et al.,Broadband mid-infrared superlattice light-emitting diodes,Journal of Applied Physics 121,185701(2017),doi:10.1063 / 1.4983023. Summary of the invention

[0007] One aspect of the present invention utilizes a heating layer and a selection of filter bands to achieve relatively low cost and easy to operate narrowband infrared light emission.

[0008] In some examples, an electric current is applied to heat a heating layer sandwiched by top and bottom optical layers, which allow only narrow-band infrared light to pass through. Since the heating temperature is usually below 2000°C, the wavelength of the emitted light is usually above 2μm. Then the energy is also distributed over the entire spectrum. Here, the present invention utilizes both the top and bottom optical layers to select the narrow-band infrared light to be passed through, while reflecting light of other wavelengths back to the heating layer or heating wire. Thereby, energy loss can be greatly reduced. Only the energy of the narrow-band infrared light passing through the optical layer is lost (due to emission to the outside). Therefore, the heating layer or heating wire can be kept at a high temperature without inputting a large amount of electricity. Thereby, the emission spectrum is narrow-band, and the power consumption of the infrared light emitting device is very low. In addition, the heating layer or heating wire can be made of common materials such as tungsten (W) or aluminum (Al), so it is easy to manufacture and low cost. In contrast, laser pumping optical parametric processes require expensive lasers and nonlinear crystals. Moreover, quantum cascade lasers require expensive growth of certain materials, so the cost is very high.

[0009] Another aspect of the present invention provides an infrared light emitting device, which preferably includes a substrate, a first insulating layer formed on the substrate, a heating layer formed on the first insulating layer, a second insulating layer formed on the heating layer, and an infrared light emitter formed on the second insulating layer. The infrared light emitter includes a first metal bonding layer formed on the second insulating layer, a lower metal layer formed on the first metal bonding layer, a second metal bonding layer formed on the lower metal layer, a dielectric layer formed on the second metal bonding, a third metal bonding layer formed on the dielectric layer, an upper metal layer formed on the third metal bonding layer, and a fourth metal bonding layer formed on the upper metal layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 FIG. 1 is a schematic diagram of an infrared light emitting device 1 according to a first embodiment of the present invention.

[0011] Figure 2A FIG. 2 is a schematic diagram of an infrared light emitting device 2 according to a second embodiment of the present invention.

[0012] Figure 2B FIG. 4 is a schematic diagram of an infrared light emitting device 3 according to a third embodiment of the present invention.

[0013] Figure 3A FIG. 1 is a schematic diagram of the configuration of the first wavelength filter 11 and the second wavelength filter 12 according to an embodiment of the present invention.

[0014] Figure 3B FIG. 1 is a schematic diagram of the configuration of a first wavelength filter 11 and a second wavelength filter 12 according to another embodiment of the present invention.

[0015] Figure 4 FIG. 1 is a top view of a grid-patterned heating layer 10 according to an embodiment of the present invention.

[0016] Figure 5 FIG. 4 is a schematic side view of an infrared light emitting device 4 according to another embodiment of the present invention.

[0017] Fig. 6A and Figure 6B Display according to Figure 5 Two sets of measured temperature versus input power curves for an infrared light emitting device are provided.

[0018] Figure 7 Display has Figure 5 Emission spectrum of the infrared light emitting device constructed as shown.

[0019]

Main component symbol description

[0020] 1: Infrared light emitting device 2: Infrared light emitting device

[0021] 3: Infrared light emitting device 4: Infrared light emitting device

[0022] 10: Heating layer 11: First band filter

[0023] 12: Second band filter 13: Reflection layer

[0024] 30: high refractive index layer 31: low refractive index layer

[0025] 50: substrate 51: first insulating layer

[0026] 52: second insulating layer 53: infrared light emitter

[0027] 58: Heating layer 105: Horizontal fingers

[0028] 312: Metal strip 101: First surface

[0029] 102: second surface 103: positive electrode

[0030] 104: negative electrode 121: lower surface

[0031] 530: lower metal layer 531: first metal bonding layer

[0032] 532: second metal bonding layer 533: third metal bonding layer

[0033] 534: fourth metal bonding layer 535: dielectric layer

[0034] 536: Upper metal layer DETAILED DESCRIPTION

[0035] The following will describe in detail the various embodiments of the present invention, with accompanying drawings as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and any easy replacement, modification, and equivalent changes of the embodiment are included in the scope of the present invention and are subject to the scope of the patent. In the description of the specification, many specific details are provided to enable the reader to have a more complete understanding of the present invention; however, the present invention may still be implemented under the premise of omitting some or all of these specific details. In addition, well-known procedural steps or elements are not described in detail to avoid unnecessary limitations on the present invention.

[0036] Figure 1 FIG. 1 is a schematic diagram of an infrared light emitting device 1 according to a first embodiment of the present invention. Figure 1 , an infrared light emitting device 1 for generating infrared light comprises a heating layer 10, a first wavelength filter 11, and a second wavelength filter 12. The first wavelength filter 11 is formed on a first surface 101 of the infrared light emitting device 1, such as an upper surface. The second wavelength filter 12 is formed on a second surface 102 of the heating layer 10, such as a lower surface. In one embodiment, the second wavelength filter 12 is omitted, and a substrate ( Figure 1 (not shown).

[0037] In some embodiments, the first band filter 11 and the second band filter 12 are both composed of alternating high refractive index layers and low refractive index layers. The first band filter 11 selectively transmits light of a wavelength range Δλ1 having a peak wavelength λ1. The second band filter 12 selectively transmits light of a wavelength range Δλ1 having the same peak wavelength λ1 as the first band filter 11. Alternatively, the second band filter 12 selectively transmits light of a wavelength range Δλ2 having a peak wavelength λ2. In this embodiment, infrared light is emitted from the top and bottom sides of the infrared light emitting device 1 at the same time.

[0038] Figure 2A Schematic diagram of an infrared light emitting device 2 according to a second embodiment of the present invention. The infrared light emitting device 2 is different from the infrared light emitting device 1 in that a reflective layer 13 is further provided below the lower surface 121 of the second wavelength filter 12. In this embodiment, infrared light is emitted from the top side of the infrared light emitting device 2.

[0039] Figure 2B Schematic diagram of an infrared light emitting device 3 according to a third embodiment of the present invention. The infrared light emitting device 3 is different from the infrared light emitting device 2 in that the infrared light emitting device 3 does not include the second wavelength filter 12, and the reflective layer 13 is disposed on the second surface 102 of the heating layer 10.

[0040] Reference Figure 2A and Figure 2B Preferably, the reflective layer 13 is made of a material having a high reflectivity for the light transmitted or emitted from the second wavelength filter 12 or the heating layer 10. In some embodiments, the material of the reflective layer 13 is selected from one of the following groups: gold (Au), silver (Ag), copper (Cu), aluminum (Al), platinum (Pt). In some embodiments, the reflective layer 13 is composed of alternating high refractive index materials and low refractive index materials. Figure 2A The reflective layer 13 may have a high reflectivity for the light in the wavelength range Δλ1 or the wavelength range Δλ2 filtered out from the second wavelength filter 12. Figure 2B , the reflective layer 13 may have high reflectivity for light of all wavelength ranges emitted from the heating layer 10 .

[0041] Figure 3A FIG. 1 is a schematic diagram of the configuration of the first wavelength filter 11 or the second wavelength filter 12 according to an embodiment of the present invention. Figure 3A , the first band filter 11 or the second band filter 12 may be composed of alternating high refractive index layers and low refractive index layers. In some embodiments, the first band filter 11 or the second band filter 12 may be composed of N pairs of high / low refractive index dielectrics or materials; wherein N is a positive integer, such as 2, 3, or 4. In some embodiments, the positive integer N is between 5 and 50. Each pair includes a high refractive index layer 30 and a low refractive index layer 31. In some embodiments, the alternating high refractive index layers 30 and low refractive index layers 31 include alternating layers of Ge / ZnS, Ge / ZnSe, TiO2 / SiO2, Si / Al2O3, TiO2 / Al2O3 or Si / TiO2. The high refractive index layer 30 may be formed of Ge, TiO2 or Si, and the low refractive index layer 31 may be formed of ZnS, ZnSe, SiO2, Al2O3 or TiO2. In other embodiments, other similar alternating materials may also be used.

[0042] Figure 3B FIG. 1 is a top view or a bottom view of a first wavelength filter 11 and a second wavelength filter 12 according to another embodiment of the present invention. Figure 3B The first wavelength filter 11 or the second wavelength filter 12 comprises a metal nanostructure, such as a metal strip 312. The periodically arranged metal strips 312 are placed above and / or below the heating layer 10, and the light transmission wavelength thereof is related to the size of the metal strips 312 and complies with the following relationship: λ = 2n eff ×d, where λ is the wavelength of light that the metal strip 312 selectively transmits, d is the width of the metal strip 312, and n eff is the effective refractive index of the metal strip 312.

[0043] Reference Figure 1 , Figure 2A and Figure 2B Preferably, the heating layer 10 is made of a conductive material with an appropriate resistivity. In some embodiments, the heating layer 10 can be made of a material selected from the following: tungsten (W), titanium nitride (TiN), gold (Au), aluminum (Al), or doped polysilicon.

[0044] In some embodiments, the heating layer 10 includes two electrodes, for example, a positive electrode 103 and a negative electrode 104 formed on its upper surface, and the heating layer 10 is heated by applying current to the positive electrode 103 and the negative electrode 104. Once the heating layer 10 is heated to a certain temperature, it emits light with a wide wavelength band. The first band filter 10 selectively transmits the wavelength range Δλ1 of the light. The second band filter 12 selectively transmits the wavelength range Δλ1 or the wavelength range Δλ2 of the light. Typically, the heating layer 10 is heated to below 2000°C and emits light with a peak wavelength greater than 2μm. In some embodiments, the heating layer 10 is heated to between 50°C and 300°C. In some embodiments, the heating layer 10 is heated to between 100°C and 200°C.

[0045] In one embodiment, the heating layer 10 may have a rectangular cross-sectional area. In some embodiments, the heating layer 10 may be patterned, for example, a heating layer 10 having a grid pattern, a spiral pattern, or a serpentine pattern. And the pattern may be designed to have a specific cross-sectional area and length, so that when a certain voltage is applied to the heating layer 10, its resistivity gives the amount of heat required to heat to a set temperature. Figure 4 A top view of a grid-patterned heating layer 10 is shown according to one embodiment of the present invention. Figure 1 , Figure 2A , Figure 2B and Figure 4 , the grid-patterned heating layer 10 includes a positive electrode 103 and a negative electrode 104 parallel to each other, and a plurality of horizontal fingers 105 evenly spaced apart between the positive electrode 103 and the negative electrode 104 .

[0046] Figure 5 FIG. 4 is a schematic side view of an infrared light emitting device 4 according to another embodiment of the present invention. Figure 5 Preferably, the infrared light emitting device 4 comprises a substrate 50, a first insulating layer 51, a second insulating layer 52, an infrared light emitter 53, and a heating layer 58. The first insulating layer 51 is generally made of oxide or nitride. The heating layer 58 is formed on the first insulating layer 51. The heating layer 58 is formed on the first insulating layer 51. The second insulating layer 52, which is generally made of oxide or nitride, is formed on the heating layer 58. The infrared light emitter 53 is formed on the second insulating layer 52.

[0047] The infrared light emitter 53 preferably includes a lower metal layer 530, a first metal bonding layer 531, a second metal bonding layer 532, a third metal bonding layer 533, a fourth metal bonding layer 534, a dielectric layer 535, and an upper metal layer 536. The lower metal layer 530 is formed on the second insulating layer 52 and sandwiched between the first metal bonding layer 531 and the second metal bonding layer 532. The dielectric layer 535 is formed on the lower metal layer 530 and sandwiched between the second metal bonding layer 532 and the third metal bonding layer 533. The upper metal layer 536 is formed on the dielectric layer 535 and sandwiched between the third metal bonding layer 533 and the fourth metal bonding layer 534.

[0048] The lower metal layer 530, the first metal bonding layer 531, the second metal bonding layer 532, the third metal bonding layer 533, the fourth metal bonding layer 534, the dielectric layer 535, and the upper metal layer 536 can be manufactured using physical or chemical processes, such as sputtering, evaporation, chemical vapor deposition, metal organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0049] In addition, the substrate 50 can be a glass substrate, a plastic substrate, a semiconductor substrate, a metal substrate, a dielectric substrate, or a composite substrate. The lower metal layer 530 can be made of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), chromium (Cr), titanium (Ti), nickel (Ni), iron (Fe), tantalum (Ta), copper (Cu), tungsten (W), cobalt (Co), or molybdenum (Mo). The dielectric layer 535 can be made of oxide, nitride, or other insulating materials. The upper metal layer 536 can be made of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), chromium (Cr), titanium (Ti), nickel (Ni), iron (Fe), tantalum (Ta), copper (Cu), tungsten (W), cobalt (Co), or molybdenum (Mo). The heating layer 58 can be made of a conductive material, such as but not limited to: titanium nitride (TiN), gold (Au), aluminum (Al), doped polysilicon, chromium (Cr), or other conductive materials. The material of the first metal bonding layer 531 , the second metal bonding layer 532 , the third metal bonding layer 533 , and the fourth metal bonding layer 534 may be one selected from the following group: titanium (Ti), zirconium (Zr), tantalum (Ta), chromium (Cr), and similar materials.

[0050] In a preferred embodiment, two electrodes, for example, a positive electrode 581 and a negative electrode 582, are formed on the upper surface of the heating layer 58, and the heating layer 58 is heated by applying current to the positive electrode 581 and the negative electrode 582. The positive electrode 581 and the negative electrode 582 may be made of the same material as the heating layer 58.

[0051] Reference Figure 5Once the heating layer 58 is heated to a certain temperature, the infrared light emitter 53 emits infrared light with a narrow bandwidth. The spectral characteristics of the infrared light emitted from the infrared light emitter 53 are generally related to the material and thickness of the lower metal layer 530, the dielectric layer 535, and / or the upper metal layer 536.

[0052] In some embodiments, the thickness of the lower metal layer 530 is between 80nm and 240nm, the thickness of the dielectric layer 535 is between 80nm and 160nm, the thickness of the upper metal layer 536 is between 80nm and 240nm, and the thickness of the first metal bonding layer 531, the second metal bonding layer 532, the third metal bonding layer 533, and the fourth metal bonding layer 534 is between 5nm and 30nm.

[0053] Fig. 6A show Figure 5 The relationship between the measured temperature and input power of the heating layer 58 in the infrared light emitting device 4, wherein the aluminum layer with a serpentine pattern is used as the heating layer. Fig. 6A In response to a voltage between 5V and 10V applied to the positive electrode 581 and the negative electrode 582, the infrared light emitting device 3 is heated to a temperature between about 100°C and about 230°C.

[0054] Figure 6B Show Similar Figure 5 Another measured temperature versus input power curve of A, where a rectangular aluminum layer is used as the heating layer. Figure 6B In response to a voltage between 2V and 4V applied to the positive electrode 581 and the negative electrode 582, the infrared light emitting device 3 is heated to a temperature between about 85°C and about 320°C.

[0055] Figure 7 Display has Figure 5 Emission spectrum of the infrared light emitting device constructed as shown. The emission spectrum was measured using a Fourier transform infrared spectrometer (FTIR). In this example, the SiO2 layer was deposited on an area of ​​3.8×3.8mm 2As the first insulating layer 51, an aluminum layer is deposited on the substrate 50 as a heating layer 58. Then, an aluminum layer is deposited on the first insulating layer 51 as a heating layer 58, and two aluminum electrodes are deposited on the heating layer 58 as a positive electrode 581 and a negative electrode 582. Next, another SiO2 layer is deposited on the upper surface of the heating layer 58 as a second insulating layer 52. Thereafter, the layers of the infrared light emitter 53 are sequentially deposited, including a first titanium layer (as a first metal bonding layer 531), a first aluminum layer (as a lower metal layer 530), a second titanium layer (as a second metal bonding layer 532), a SiO2 layer (as a dielectric layer 535), a third titanium layer (as a third metal bonding layer 533), a second aluminum layer (as an upper metal layer 536), and a fourth titanium layer (as a fourth metal bonding layer 534). The thickness of the first, second, third and fourth titanium layers (the first, second, third and fourth metal bonding layers 531 / 532 / 533 / 534) is 5 nm, the thickness of the first and second aluminum layers (the lower metal layer 530 / upper metal layer / 536) is 120 nm, and the thickness of the SiO2 layer (dielectric layer 535) is 100 nm. Figure 7 , the infrared light emitting device of this example can emit infrared light with a peak wavelength of 4.26 μm and a full width at half maximum (FWHM) of about 0.15 μm. In other embodiments of the present invention, the multilayer structure of the infrared light emitting device and the pattern of the heating layer can be designed according to the required emission wavelength and its corresponding FWHM.

[0056] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with the profession can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A heating narrow-band infrared light emitting device, characterized in that: Include: a heating layer; a first wavelength filter directly contacting the upper surface of the heating layer; and a second wavelength filter directly contacting the lower surface of the heating layer; The positive electrode and the negative electrode directly contact the upper surface of the heating layer; The heating layer is heated to a certain temperature and emits light, the first wavelength filter selectively transmits the wavelength range Δλ1 of the light, and the second wavelength filter selectively transmits the wavelength range Δλ1 or the wavelength range Δλ2 of the light.

2. The heating narrow-band infrared light emitting device according to claim 1, characterized in that: Also includes: A reflective layer is formed on the lower surface of the second wavelength band filter.

3. The heating narrow-band infrared light emitting device according to claim 2, characterized in that: The material of the reflective layer is selected from one of the following groups: gold (Au), silver (Ag), copper (Cu), aluminum (Al), and platinum (Pt).

4. The heating narrow-band infrared light emitting device according to claim 2, characterized in that: The reflective layer is composed of alternating high refractive index dielectric layers and low refractive index dielectric layers.

5. The heating narrow-band infrared light emitting device according to claim 1, characterized in that: The first band filter and the second band filter are both composed of alternating high refractive index layers and low refractive index layers.

6. The heating narrow-band infrared light emitting device according to claim 5, characterized in that: The alternating high refractive index layers and low refractive index layers include alternating Ge / ZnS, Ge / ZnSe, TiO2 / SiO2, Si / Al2O3, TiO2 / Al2O3, or Si / TiO2 layers.

7. The heating narrow-band infrared light emitting device according to claim 1, characterized in that: The first wavelength filter and the second wavelength filter are both composed of periodically arranged metal strips.

8. The heating narrow-band infrared light emitting device according to claim 1, characterized in that: The material of the heating layer is selected from one of the following groups: tungsten (W), titanium nitride (TiN), gold (Au), aluminum (Al), and doped polysilicon.

9. The heating narrow-band infrared light emitting device according to claim 1, characterized in that: The heating layer is patterned.

10. A heating narrow-band infrared light emitting device, characterized in that: Include: Heating layer; a first wavelength filter directly contacting the upper surface of the heating layer; The positive electrode and the negative electrode directly contact the upper surface of the heating layer; and a reflective layer directly contacting the lower surface of the heating layer; The heating layer is heated to a certain temperature and emits light, and the first wavelength filter selectively transmits the wavelength range Δλ1 of the light.

11. The heating narrow-band infrared light emitting device according to claim 10, characterized in that: The reflective layer is composed of alternating high-refractive-index dielectric layers and low-refractive-index dielectric layers.

12. The heating narrow-band infrared light emitting device according to claim 10, characterized in that: The first band filter is composed of alternating high refractive index layers and low refractive index layers.

13. The heating narrow-band infrared light emitting device according to claim 12, characterized in that: The alternating high refractive index layers and low refractive index layers include alternating Ge / ZnS, Ge / ZnSe, TiO2 / SiO2, Si / Al2O3, TiO2 / Al2O3, or Si / TiO2 layers.

14. The heating narrow-band infrared light emitting device according to claim 10, characterized in that: The first band filter is composed of periodically arranged metal strips.

15. A heating narrow-band infrared light emitting device, characterized in that: Include: substrate; A first insulating layer formed on the substrate; a heating layer formed on the first insulating layer; a second insulating layer formed on the heating layer; as well as an infrared light emitter formed on the second insulating layer; Wherein, the infrared light emitter comprises: a first metal bonding layer formed on the second insulating layer; a lower metal layer formed on the first metal bonding layer; a second metal bonding layer formed on the lower metal layer; a dielectric layer formed on the second metal bonding layer; a third metal bonding layer formed on the dielectric layer; an upper metal layer formed on the third metal bonding layer; a fourth metal bonding layer formed on the upper metal layer; and The positive electrode and the negative electrode directly contact the upper surface of the heating layer, the upper metal layer, and the lower metal layer.

16. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: Also includes: A positive electrode and a negative electrode are formed on an upper surface of the heating layer.

17. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The material of the lower metal layer is one selected from the following groups: aluminum (Al), silver (Ag), gold (Au), platinum (Pt), chromium (Cr), titanium (Ti), nickel (Ni), iron (Fe), tantalum (Ta), copper (Cu), tungsten (W), cobalt (Co), molybdenum (Mo).

18. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The material of the upper metal layer is selected from one of the following groups: aluminum (Al), silver (Ag), gold (Au), platinum (Pt), chromium (Cr), titanium (Ti), nickel (Ni), iron (Fe), tantalum (Ta), copper (Cu), tungsten (W), cobalt (Co), and molybdenum (Mo).

19. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The material of the first metal bonding layer, the second metal bonding layer, the third metal bonding layer, and the fourth metal bonding layer is selected from one of the following groups: titanium (Ti), zirconium (Zr), tantalum (Ta), and chromium (Cr).

20. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The thickness of the dielectric layer is between 80 nm and 160 nm.

21. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The thickness of the upper metal layer is between 80 nm and 240 nm.

22. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The thickness of the lower metal layer is between 80 nm and 240 nm.

23. The heating narrow-band infrared light emitting device according to claim 15, characterized in that: The heating layer is patterned.

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