Bidirectional Switch Module and Bidirectional Switch

Abstract

The problem to be overcome by the present invention is to provide a bidirectional switch module and a bidirectional switch each of which allows a large amount of current to flow through. The bidirectional switch module (100) includes a plurality of bidirectional switches (1) and a mounting plate (200). Each of the plurality of bidirectional switches (1) includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. A plurality of bidirectional switches (1) are mounted on the mounting plate (200). In the bidirectional switch module (100), the plurality of bidirectional switches (1) are connected in parallel.

Description

Technical Field

[0001] The present invention generally relates to a bidirectional switch module and a bidirectional switch. More particularly, the present invention relates to a bidirectional switch module including a bidirectional switch having two gate electrodes, and also relates to such a bidirectional switch having two gate electrodes. Background Art

[0002] In the prior art, a dual-gate type (also referred to as "double-gate type") semiconductor element has been proposed as an exemplary bidirectional switch (for example, see Patent Document 1).

[0003] Patent Document 1 discloses an example in which a semiconductor element is housed in a package.

[0004] The semiconductor element of Patent Document 1 includes: a semiconductor multilayer structure; a first ohmic electrode (first source electrode) and a second ohmic electrode (second source electrode) formed on the semiconductor multilayer structure so as to be spaced apart from each other; and a first gate electrode and a second gate electrode formed between the first ohmic electrode and the second ohmic electrode in this order from the first ohmic electrode toward the second ohmic electrode.

[0005] The first ohmic electrode includes a plurality of first ohmic electrode fingers (first source electrode comb teeth). The second ohmic electrode includes a plurality of second ohmic electrode fingers (second source electrode comb teeth). The first gate electrode includes a plurality of first gate electrode fingers (first gate electrode comb teeth). The second gate electrode includes a plurality of second gate electrode fingers (second gate electrode comb teeth). The semiconductor element includes a plurality of dual-gate transistor units, and in each of the plurality of dual-gate transistor units, the first gate electrode fingers and the second gate electrode fingers are arranged between the first ohmic electrode fingers and the second ohmic electrode fingers in this order.

[0006] The semiconductor element includes an S1 electrode pad (first source electrode pad), an S2 electrode pad (second source electrode pad), a G1 electrode pad (first gate electrode pad), and a G2 electrode pad (second gate electrode pad). The S1 electrode pad is connected to each of the first ohmic electrode fingers of the first ohmic electrode via an S1 electrode wire. The S2 electrode pad is connected to each of the second ohmic electrode fingers of the second ohmic electrode via an S2 electrode wire. The G1 electrode pad is connected to each of the first gate electrode fingers of the first gate electrode via a G1 electrode wire. The G2 electrode pad is connected to each of the second gate electrode fingers of the second gate electrode via a G2 electrode wire.

[0007] In the field of bidirectional switches, there is an increasing demand for enabling a larger amount of current to flow through the bidirectional switch.

[0008] Prior Art Documents

[0009] Patent Documents

[0010] Patent Document 1: WO 2011 / 064955 A1 Summary of the Invention

[0011] An object of the present invention is to provide a bidirectional switch module and a bidirectional switch each of which contributes to allowing a large current to flow therethrough.

[0012] A bidirectional switch module according to an aspect of the present invention includes a plurality of bidirectional switches and a mounting plate. Each of the plurality of bidirectional switches includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. On the mounting plate, the plurality of bidirectional switches are mounted. In the bidirectional switch module, the plurality of bidirectional switches are connected in parallel.

[0013] A bidirectional switch according to another aspect of the present invention includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. The first source electrode includes a plurality of first source electrode comb teeth portions. The first gate electrode includes a plurality of first gate electrode comb teeth portions. The second gate electrode includes a plurality of second gate electrode comb teeth portions. The second source electrode includes a plurality of second source electrode comb teeth portions. In the bidirectional switch, the plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in this order from the first source electrode comb teeth portion toward the second source electrode comb teeth portion. The bidirectional switch further includes a first source electrode pad, a first gate electrode pad, a second gate electrode pad, and a second source electrode pad. The first source electrode pad is electrically connected to the plurality of first source electrode comb teeth portions. The first gate electrode pad is electrically connected to the plurality of first gate electrode comb teeth portions. The second gate electrode pad is electrically connected to the plurality of second gate electrode comb teeth portions. The second source electrode pad is electrically connected to the plurality of second source electrode comb teeth portions. The bidirectional switch has a first side and a second side that are parallel to each other in a plan view and a third side and a fourth side that are parallel to each other in a plan view. The first source electrode pad is arranged along the first side. The second source electrode pad is arranged along the second side. The first gate electrode pad is arranged along the third side. The second gate electrode pad is arranged along the fourth side. The distance between the first gate electrode pad and the first source electrode pad is shorter than the distance between the first gate electrode pad and the second source electrode pad. The distance between the second gate electrode pad and the second source electrode pad is shorter than the distance between the second gate electrode pad and the first source electrode pad.

[0014] According to another aspect of the present invention, a bidirectional switch includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. The first source electrode includes a plurality of first source electrode comb teeth portions. The first gate electrode includes a plurality of first gate electrode comb teeth portions. The second gate electrode includes a plurality of second gate electrode comb teeth portions. The second source electrode includes a plurality of second source electrode comb teeth portions. In the bidirectional switch, the plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in this order from the first source electrode comb tooth portion toward the second source electrode comb tooth portion. The bidirectional switch further includes a first source electrode pad, two first gate electrode pads, two second gate electrode pads, and a second source electrode pad. The first source electrode pad is electrically connected to the plurality of first source electrode comb teeth portions. The two first gate electrode pads are electrically connected to the plurality of first gate electrode comb teeth portions. The two second gate electrode pads are electrically connected to the plurality of second gate electrode comb teeth portions. The second source electrode pad is electrically connected to the plurality of second source electrode comb teeth portions. The bidirectional switch has a first side and a second side that are parallel to each other in a plan view and a third side and a fourth side that are parallel to each other in a plan view. The first source electrode pad is arranged along the first side. The second source electrode pad is arranged along the second side. One of the two first gate electrode pads and one of the two second gate electrode pads are arranged along the third side. Between the first source electrode pad and the second source electrode pad, the one first gate electrode pad is closer to the first source electrode pad than to the second source electrode pad, and the one second gate electrode pad is closer to the second source electrode pad than to the first source electrode pad. The other of the two first gate electrode pads and the other of the two second gate electrode pads are arranged along the fourth side. Between the first source electrode pad and the second source electrode pad, the other first gate electrode pad is closer to the first source electrode pad than to the second source electrode pad, and the other second gate electrode pad is closer to the second source electrode pad than to the first source electrode pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a plan view of a bidirectional switch module according to a first embodiment;

[0016] Figure 2 shows the layout in a plan view for each bidirectional switch included in the bidirectional switch module;

[0017] Figure 3 is as alongFigure 2 Cross-sectional views of each two-way switch included in the two-way switch module taken along the plane A-A shown;

[0018] Figure 4 Is a plan view of a two-way switch module according to a first modification of the first embodiment;

[0019] Figure 5 Is a plan view of a two-way switch module according to a second modification of the first embodiment;

[0020] Figure 6 Is a plan view of a two-way switch module according to a third modification of the first embodiment;

[0021] Figure 7 Is a plan view of a two-way switch module according to the second embodiment;

[0022] Figure 8 Shows the layout in the plan view for each two-way switch included in the two-way switch module;

[0023] Figure 9 Is a plan view of a two-way switch module according to the third embodiment;

[0024] Figure 10 A shows the layout in the plan view for one of the two types of two-way switches included in the two-way switch module;

[0025] Figure 10 B shows the layout in the plan view for the other two-way switch of the two types of two-way switches included in the two-way switch module;

[0026] Figure 11 Is a plan view of a two-way switch module according to the fourth embodiment;

[0027] Figure 12 Shows the layout in the plan view for each two-way switch included in the two-way switch module; and

[0028] Figure 13 Is a plan view of a two-way switch module according to the fifth embodiment. Detailed Description of the Invention

[0029] In the following description of the embodiments and their modifications, the Figures 1 to 13 are all schematic diagrams. Therefore, in Figures 1 to 13 the ratios of the dimensions (including thickness) of the respective components shown do not always reflect the actual dimensional ratios of these components.

[0030] (First Embodiment)

[0031] Reference will be made to Figures 1 to 3To describe the bidirectional switch module 100 according to the first embodiment.

[0032] (1) Overview

[0033] As Figure 1 shown, the bidirectional switch module 100 includes a plurality (e.g., three) of bidirectional switches 1 and a mounting board 200. As Figure 2 and Figure 3 shown, each of the plurality of bidirectional switches 1 includes a first source electrode 71, a first gate electrode 81, a second gate electrode 82, and a second source electrode 72. As Figure 1 shown, the plurality of bidirectional switches 1 are mounted on the mounting board 200. In the present embodiment, the mounting board 200 includes, for example, a plurality of die pad portions 202 associated with the plurality of bidirectional switches 1 in a one-to-one manner. Each of the plurality of bidirectional switches 1 is mounted on the associated die pad portion 202 of the plurality of die pad portions 202. Mounting each of the plurality of bidirectional switches 1 on the associated die pad portion 202 of the plurality of die pad portions 202 enables the bidirectional switch 1 to be bonded to the die pad portion 202. The bonding portion that bonds the bidirectional switch 1 and the die pad portion 202 is made of a die bonding material such as solder or conductive paste. In the bidirectional switch module 100, the plurality of bidirectional switches 1 are connected in parallel.

[0034] (2) Constituent elements of the bidirectional switch module

[0035] Next, each of the constituent elements of the bidirectional switch module 100 will be described in further detail.

[0036] (2.1.1) Bidirectional switch

[0037] As Figure 3 shown, the bidirectional switch 1 includes, for example, a substrate 2, a first nitride semiconductor layer 4, a second nitride semiconductor layer 5, a first source electrode 71, a first gate electrode 81, a second gate electrode 82, and a second source electrode 72. Additionally, the bidirectional switch 1 further includes a first p-type layer 61 and a second p-type layer 62.

[0038] The bidirectional switch 1 is a gate injection transistor (GIT) based on a dual-gate type GaN. The substrate 2 can be, for example, a silicon substrate and has conductivity. The first nitride semiconductor layer 4 can be, for example, a GaN layer. The second nitride semiconductor layer 5 can be, for example, an AlGaN layer. The first p-type layer 61 can be, for example, a p-type AlGaN layer. The second p-type layer 62 can be, for example, a p-type AlGaN layer. The p-type AlGaN layers used for the first p-type layer 61 and the second p-type layer 62 may or may not have the same Al composition ratio (e.g., 0.2) as the AlGaN layer used for the second nitride semiconductor layer 5. As used herein, the Al composition ratio refers to the ratio of Al in the p-type AlGaN layer represented by the general formula Alx Ga 1-x The x value in the case of being represented by N, and is the molar ratio of Al to the sum of Al and Ga. Each of the first p-type layer 61 and the second p-type layer 62 does not have to be a p-type AlGaN layer, but may also be, for example, a p-type GaN layer.

[0039] When viewed in a plane in the thickness direction defined with respect to the substrate 2, the substrate 2 may have, for example, a square outer peripheral shape. However, this is only an example and should not be construed as restrictive. Alternatively, the substrate 2 may also have a rectangular outer peripheral shape in the plan view.

[0040] The substrate 2 is electrically insulated from all of the first source electrode 71, the second source electrode 72, the first gate electrode 81, and the second gate electrode 82.

[0041] The first nitride semiconductor layer 4 is formed above the substrate 2. The second nitride semiconductor layer 5 is formed on the first nitride semiconductor layer 4. The second nitride semiconductor layer 5 has a larger bandgap than the first nitride semiconductor layer 4. The first source electrode 71 is formed on the second nitride semiconductor layer 5. The first gate electrode 81 is formed above the second nitride semiconductor layer 5 and is separated from the first source electrode 71. The second gate electrode 82 is also formed above the second nitride semiconductor layer 5 and is separated from the first gate electrode 81. The second source electrode 72 is formed on the second nitride semiconductor layer 5 and is separated from the second gate electrode 82. The first p-type layer 61 is inserted between the first gate electrode 81 and the second nitride semiconductor layer 5. The second p-type layer 62 is inserted between the second gate electrode 82 and the second nitride semiconductor layer 5. In this bidirectional switch 1, a multilayer stack 10 including the first nitride semiconductor layer 4, the second nitride semiconductor layer 5, the first p-type layer 61, and the second p-type layer 62 is formed on the substrate 2.

[0042] In the bidirectional switch 1, the second nitride semiconductor layer 5 and the first nitride semiconductor layer 4 form a heterojunction HJ1 together. In a region of the first nitride semiconductor layer 4 near the heterojunction HJ1, a two-dimensional electron gas is generated. The region including the two-dimensional electron gas (hereinafter also referred to as the "two-dimensional electron gas layer") can be used as an n-channel layer (electron conduction layer).

[0043] The first nitride semiconductor layer 4 is formed over the substrate 2 with a buffer layer 3 interposed therebetween. In the present embodiment, the multilayer stack 10 includes the buffer layer 3. In this multilayer stack 10, the buffer layer 3, the first nitride semiconductor layer 4, and the second nitride semiconductor layer 5 are arranged in this order such that the buffer layer 3 is positioned closer to the substrate 2 than any other layer of the multilayer stack 10. Further, the multilayer stack 10 also includes a first p-type layer 61 and a second p-type layer 62 formed over the second nitride semiconductor layer 5. The buffer layer 3 may be, for example, an undoped GaN layer. The GaN layer serving as the first nitride semiconductor layer 4 may be, for example, an undoped GaN layer. The AlGaN layer serving as the second nitride semiconductor layer 5 may be, for example, an undoped AlGaN layer. Each of the buffer layer 3, the first nitride semiconductor layer 4, and the second nitride semiconductor layer 5 may include, for example, Mg, H, Si, C, O, and other impurities that are inevitably included during their growth by metalorganic chemical vapor deposition (MOVPE) process.

[0044] The first p-type layer 61 and the second p-type layer 62 only partially cover the surface 51 of the second nitride semiconductor layer 5. Accordingly, the surface 51 of the second nitride semiconductor layer 5 includes a region covered by the first p-type layer 61 and the second p-type layer 62 and a region not covered by the first p-type layer 61 and the second p-type layer 62. The first p-type layer 61 and the second p-type layer 62 are spaced apart from each other.

[0045] The first source electrode 71 and the second source electrode 72 are formed over the region of the surface 51 of the second nitride semiconductor layer 5 that is not covered by the first p-type layer 61 and the second p-type layer 62. The first source electrode 71 and the second source electrode 72 are spaced apart from each other. The first source electrode 71 and the second source electrode 72 are electrically connected to the heterojunction HJ1. As used herein, if two members are “electrically connected”, this phrase means that the two members are in ohmic contact with each other. The first source electrode 71 and the second source electrode 72 each include, for example, Ti and Al.

[0046] The first gate electrode 81 is disposed over the second nitride semiconductor layer 5 with the first p-type layer 61 interposed therebetween. Similarly, the second gate electrode 82 is disposed over the second nitride semiconductor layer 5 with the second p-type layer 62 interposed therebetween. The first gate electrode 81 and the second gate electrode 82 are in ohmic contact with the first p-type layer 61 and the second p-type layer 62, respectively. The first gate electrode 81 and the second gate electrode 82 each include, for example, Pd and Au.

[0047] The substrate 2 may have a thickness, for example, falling within the range from 100 μm to 1000 μm. The buffer layer 3 may have a thickness, for example, falling within the range from 100 nm to 3000 nm. The first nitride semiconductor layer 4 may have a thickness, for example, falling within the range from 100 nm to 700 nm. The second nitride semiconductor layer 5 may have a thickness, for example, falling within the range from 20 nm to 100 nm. Each of the first p-type layer 61 and the second p-type layer 62 may have a thickness, for example, falling within the range from 50 nm to 300 nm.

[0048] In the bidirectional switch 1, as Figure 2 shown, the first source electrode 71 includes a plurality of (for example, six in the Figure 2 example shown) first source electrode comb teeth portions 711. The first gate electrode 81 includes a plurality of (for example, ten in the Figure 2 example shown) first gate electrode comb teeth portions 811. The second gate electrode 82 includes a plurality of (for example, ten in the Figure 2 example shown) second gate electrode comb teeth portions 821. The second source electrode 72 includes a plurality of (for example, five in the Figure 2 example shown) second source electrode comb teeth portions 721.

[0049] The plurality of first source electrode comb teeth portions 711 and the plurality of second source electrode comb teeth portions 721 are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions 711 and second source electrode comb teeth portions 721, one of the plurality of first gate electrode comb teeth portions 811 and one of the plurality of second gate electrode comb teeth portions 821 are arranged side by side in this order from the first source electrode comb teeth portion 711 toward the second source electrode comb teeth portion 721. In the following description, the direction in which the first source electrode comb teeth portion 711, the first gate electrode comb teeth portion 811, and the second gate electrode comb teeth portion 821 are arranged side by side in the plan view of the bidirectional switch 1 will be hereinafter referred to as the "predetermined direction".

[0050] Each pair of adjacent first gate electrode comb teeth portions 811 and second gate electrode comb teeth portions 821 in the predetermined direction are spaced apart from each other. The distance between the adjacent first gate electrode comb teeth portion 811 and second gate electrode comb teeth portion 821 in the predetermined direction is longer than the distance between the adjacent first p-type layer 61 and second p-type layer 62 in the predetermined direction. The adjacent first gate electrode comb teeth portion 811 and first source electrode comb teeth portion 711 in the predetermined direction are spaced apart from each other. The adjacent second gate electrode comb teeth portion 821 and second source electrode comb teeth portion 721 in the predetermined direction are also spaced apart from each other.

[0051] The bidirectional switch 1 further includes a first source electrode pad S1, a first gate electrode pad G1, a second source electrode pad S2, and a second gate electrode pad G2.

[0052] The first source electrode pad S1 is electrically connected to a plurality of first source electrode comb teeth portions 711. The first source electrode pad S1 has an elongated (linear) shape elongated along a predetermined direction. One end of the first source electrode pad S1 in the short side direction (i.e., the width direction) defined for it is connected to a plurality of first source electrode comb teeth portions 711. Thus, in this two-way switch 1, the combination of the first source electrode pad S1 and the plurality of first source electrode comb teeth portions 711 defines a comb shape. The short side direction defined for the first source electrode pad S1 is a direction perpendicular to the predetermined direction in the plan view of the two-way switch 1. The first source electrode pad S1 has a first end 111 and a second end 112 in the long side direction.

[0053] The first gate electrode pad G1 faces the first end 111 of the first source electrode pad S1 in a direction perpendicular to the predetermined direction.

[0054] The first gate electrode pad G1 is electrically connected to a plurality of first gate electrode comb teeth portions 811 of the first gate electrode 81. In this embodiment, the first gate electrode 81 includes a first gate electrode comb bone portion 812 connected to a plurality of first gate electrode comb teeth portions 811. The first gate electrode comb bone portion 812 has an elongated (linear) shape elongated along a predetermined direction. Thus, in this two-way switch 1, the first gate electrode 81 including the first gate electrode comb bone portion 812 and a plurality of first gate electrode comb teeth portions 811 has a comb shape. When viewing the two-way switch 1 in a plane in the thickness direction, the first gate electrode comb bone portion 812 is adjacent to the first source electrode pad S1. The first gate electrode comb bone portion 812 is located in a layer different from the plurality of first source electrode comb teeth portions 711 in the thickness direction defined for the two-way switch 1 and does not contact the plurality of first source electrode comb teeth portions 711. In other words, an insulating layer (such as an interlayer insulating film, etc.) having electrical insulation is inserted between the first gate electrode comb bone portion 812 and the plurality of first source electrode comb teeth portions 711 in the thickness direction defined for the two-way switch 1.

[0055] The first gate electrode pad G1 is electrically connected to a plurality of first gate electrode comb teeth portions 811 via a wiring portion 813 (which extends from the first gate electrode pad G1 toward the first source electrode pad S1) and the first gate electrode comb bone portion 812. The first gate electrode pad G1 may have a square shape in the plan view, for example. However, this is only an example and should not be construed as restrictive. Alternatively, the first gate electrode pad G1 may also have a rectangular shape in the plan view. When measured in the predetermined direction, the length of the first gate electrode pad G1 is shorter than the length of the first source electrode pad S1.

[0056] The second source electrode pad S2 is electrically connected to a plurality of second source electrode comb teeth portions 721. The second source electrode pad S2 has an elongated (linear) shape elongated in a predetermined direction. One end of the second source electrode pad S2 in the short side direction (i.e., the width direction) defined for it is connected to a plurality of second source electrode comb teeth portions 721. Thus, in this bilateral switch 1, the combination of the second source electrode pad S2 and the plurality of second source electrode comb teeth portions 721 defines a comb shape. The short side direction defined for the second source electrode pad S2 is a direction perpendicular to the predetermined direction in the plan view of the bilateral switch 1. The second source electrode pad S2 has a first end 121 and a second end 122 in the long side direction.

[0057] The second gate electrode pad G2 faces the first end 121 of the second source electrode pad S2 in a direction perpendicular to the predetermined direction.

[0058] The second gate electrode pad G2 is electrically connected to a plurality of second gate electrode comb teeth portions 821 of the second gate electrode 82. In this embodiment, the second gate electrode 82 includes a second gate electrode comb bone portion 822 connected to a plurality of second gate electrode comb teeth portions 821. The second gate electrode comb bone portion 822 has an elongated (linear) shape elongated in a predetermined direction. Thus, in this bilateral switch 1, the second gate electrode 82 including the second gate electrode comb bone portion 822 and a plurality of second gate electrode comb teeth portions 821 has a comb shape. When viewing the bilateral switch 1 in a plane in the thickness direction, the second gate electrode comb bone portion 822 is adjacent to the second source electrode pad S2. The second gate electrode comb bone portion 822 is located in a layer different from the plurality of second source electrode comb teeth portions 721 in the thickness direction defined for the bilateral switch 1 and does not contact the plurality of second source electrode comb teeth portions 721. In other words, an insulating layer (such as an interlayer insulating film, etc.) having electrical insulation is inserted between the second gate electrode comb bone portion 822 and the plurality of second source electrode comb teeth portions 721 in the thickness direction defined for the bilateral switch 1.

[0059] The second gate electrode pad G2 is electrically connected to a plurality of second gate electrode comb teeth portions 821 via a wiring portion 823 (which extends from the second gate electrode pad G2 toward the second source electrode pad S2) and the second gate electrode comb bone portion 822. The second gate electrode pad G2 may have a square shape in the plan view. However, this is only an example and should not be construed as restrictive. Alternatively, the second gate electrode pad G2 may also have a rectangular shape in the plan view. When measured in the predetermined direction, the length of the second gate electrode pad G2 is shorter than the length of the second source electrode pad S2.

[0060] The bilateral switch 1 further includes a passivation film 9 (see Figure 1 ). The passivation film 9 covers the first source electrode 71, the first gate electrode 81, the second gate electrode 81, the second source electrode 72, and other components on the surface 51 of the second nitride semiconductor layer 5. Additionally, asFigure 1 As shown, the passivation film 9 has a plurality of (e.g., four in this example) openings 91 - 94, and these plurality of openings 91 - 94 are respectively provided in a one - to - one manner for the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2, so as to expose the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2.

[0061] When viewed in a plane in the thickness direction defined for the bidirectional switch 1, the outer peripheral shape of the bidirectional switch 1 is substantially the same as the outer peripheral shape of the substrate 2. The outer peripheral shape of the bidirectional switch 1 can be, for example, a square. However, this is only an example and should not be construed as restrictive. Alternatively, the outer peripheral shape of the bidirectional switch 1 can also be, for example, a rectangle.

[0062] As Figure 2 shown, the bidirectional switch 1 has a first side 11 and a second side 12 that are parallel to each other in a plan view, and a third side 13 and a fourth side 14 that are parallel to each other in a plan view. The angles formed between the first side 11 and each of the third side 13 and the fourth side 14, and the angles formed between the second side 12 and each of the third side 13 and the fourth side 14 are all 90 degrees. In the bidirectional switch 1, the contour along the outer periphery of the passivation film 9, the multilayer stack 10, or the substrate 2 in a plan view has the first side 11 to the fourth side 14.

[0063] The first source electrode pad S1 is arranged along the first side 11. The second source electrode pad S2 is arranged along the second side 12. The first gate electrode pad G1 and the second gate electrode pad G2 are arranged along the third side 13. In the direction aligned with the third side 13, the first end 111 of the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the first end 121 of the second source electrode pad S2 are arranged side by side in this order. In the bidirectional switch 1, the first end 111 of the first source electrode pad S1, the second end 112 of the first source electrode pad S1, the first end 121 of the second source electrode pad S2, and the second end 122 of the second source electrode pad S2 are respectively located at the four corners of the bidirectional switch 1 in a plan view.

[0064] (2.1.2) Operation of the Bidirectional Switch

[0065] In the following description, for convenience, a state in which a voltage equal to or greater than a first threshold value (e.g., 1.3 V) is not applied between the first gate electrode 81 and the first source electrode 71 will hereinafter be referred to as a state where "the first gate electrode 81 is in an OFF state". On the other hand, a state in which a voltage equal to or greater than the first threshold value is applied between the first gate electrode 81 and the first source electrode 71 when the first gate electrode 81 has a higher potential will hereinafter be referred to as a state where "the first gate electrode 81 is in an ON state". Further, a state in which a voltage equal to or greater than a second threshold value (e.g., 1.3 V) is not applied between the second gate electrode 82 and the second source electrode 72 will hereinafter be referred to as a state where "the second gate electrode 82 is in an OFF state". On the other hand, a state in which a voltage equal to or greater than the second threshold value is applied between the second gate electrode 82 and the second source electrode 72 when the second gate electrode 82 has a higher potential will hereinafter be referred to as a state where "the second gate electrode 82 is in an ON state".

[0066] The bidirectional switch 1 includes the above-described first p-type layer 61 and second p-type layer 62, and is thus implemented as a normally-off (OFF) type transistor. In the present embodiment, the transistor is a lateral transistor. When the first gate electrode 81 is in an OFF state, the first p-type layer 61 forms a depletion layer directly below the first p-type layer 61 itself and between the second nitride semiconductor layer 5 and the first nitride semiconductor layer 4. When the second gate electrode 82 is in an OFF state, the second p-type layer 62 forms a depletion layer directly below the second p-type layer 62 itself and between the second nitride semiconductor layer 5 and the first nitride semiconductor layer 4. When the first gate electrode 81 is in an ON state, the bidirectional switch 1 can connect the first gate electrode comb-shaped portion 811 and the first source electrode comb-shaped portion 711 to the two-dimensional electron gas layer. In other words, in the bidirectional switch 1, when the first gate electrode 811 is in an ON state, the two-dimensional electron gas layer is not interrupted by the depletion layer between the first gate electrode comb-shaped portion 811 and the first source electrode comb-shaped portion 711. Further, when the second gate electrode 82 is in an ON state, the bidirectional switch 1 can connect the second gate electrode comb-shaped portion 821 and the second source electrode comb-shaped portion 721 to the two-dimensional electron gas layer. In other words, in the bidirectional switch 1, when the second gate electrode 82 is in an ON state, the two-dimensional electron gas layer is not interrupted by the depletion layer between the second gate electrode comb-shaped portion 821 and the second source electrode comb-shaped portion 721.

[0067] When the first gate electrode 81 is in the off state and the second gate electrode 82 is in the off state (i.e., in the first operation mode), the bidirectional switch 1 does not allow current to flow between the first source electrode 71 and the second source electrode 72 in either direction. More specifically, in the first operation mode, when the first source electrode 71 has a higher potential than the second source electrode 72, the current flowing from the first source electrode 71 toward the second source electrode 72 is blocked. Additionally, when the second source electrode 72 has a higher potential than the first source electrode 71, the current flowing from the second source electrode 72 toward the first source electrode 71 is blocked.

[0068] When the first gate electrode 81 is in the on state and the second gate electrode 82 is in the on state (i.e., in the second operation mode), the bidirectional switch 1 allows current to flow bidirectionally between the first source electrode 71 and the second source electrode 72. More specifically, in the second operation mode, when the first source electrode 71 has a higher potential than the second source electrode 72, current flows from the first source electrode 71 toward the second source electrode 72. Additionally, when the second source electrode 72 has a higher potential than the first source electrode 71, current flows from the second source electrode 72 toward the first source electrode 71.

[0069] When the first gate electrode 81 is in the on state and the second gate electrode 82 is in the off state (i.e., in the third operation mode), the bidirectional switch 1 functions as a diode. More specifically, in the third operation mode, when the first source electrode 71 has a higher potential than the second source electrode 72, the current flowing from the first source electrode 71 toward the second source electrode 72 is blocked. Additionally, when the second source electrode 72 has a potential higher than the first source electrode 71 by at least the second threshold voltage, current flows from the second source electrode 72 toward the first source electrode 71.

[0070] When the first gate electrode 81 is in the off state and the second gate electrode 82 is in the on state (i.e., in the fourth operation mode), the bidirectional switch 1 functions as a diode. More specifically, in the fourth operation mode, when the second source electrode 72 has a higher potential than the first source electrode 71, the current flowing from the second source electrode 72 toward the first source electrode 71 is blocked. Additionally, when the first source electrode 71 has a potential higher than the second source electrode 72 by at least the first threshold voltage, current flows from the first source electrode 71 toward the second source electrode 72.

[0071] In the above-described two-way switch 1, the first threshold voltage and the second threshold voltage have the same value. Alternatively, the first threshold voltage and the second threshold voltage may also have different values. The first threshold voltage herein refers to the following threshold voltage, at which, due to the depletion layer shrinkage of the two-dimensional electron gas layer being blocked by the extension under the first gate electrode comb portion 811 of the first gate electrode 81, current is allowed to flow through the two-dimensional electron gas layer. The second threshold voltage herein refers to the following threshold voltage, at which, due to the depletion layer shrinkage of the two-dimensional electron gas layer being blocked by the extension under the second gate electrode comb portion 821 of the second gate electrode 82, current is allowed to flow through the two-dimensional electron gas layer.

[0072] (2.2) Mounting plate

[0073] As Figure 1 shown, the mounting plate 200 includes an insulating substrate 201, a first source wiring portion SS1, a first gate wiring portion GG1, a second gate wiring portion GG2, and a second source wiring portion SS2.

[0074] The insulating substrate 201 can be, for example but not necessarily, a ceramic substrate such as an aluminum nitride substrate, an alumina substrate, or a silicon nitride substrate. When viewed in the thickness direction defined for the insulating substrate 201, the insulating substrate 201 can have, but does not have to have, a rectangular outer peripheral shape.

[0075] The first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 are arranged on the insulating substrate 201 and all extend in the direction in which a plurality of two-way switches 1 are arranged side by side. The first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 each have an elongated (linear) shape. The first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 are each arranged such that the long side direction thereof is aligned with the direction in which a plurality of two-way switches 1 are arranged side by side. The first source wiring portion SS1 and the second source wiring portion SS2 each appropriately have a line width wider than that of the first gate wiring portion GG1 and the second gate wiring portion GG2, respectively.

[0076] On the mounting plate 200, the first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 are arranged side by side in this order in a plan view. In this embodiment, a plurality of two-way switches 1 are provided between the first gate wiring portion GG1 and the second gate wiring portion GG2 and do not contact the first gate wiring portion GG1 and the second gate wiring portion GG2.

[0077] In addition, the mounting plate 200 further includes a plurality of (e.g., three) first gate wiring extension portions GG11 and a plurality of (e.g., three) second gate wiring extension portions GG21.

[0078] The plurality of first gate wiring extension portions GG11 extend from the first gate wiring portion GG1 toward the second gate wiring portion GG2. The length of each of the plurality of first gate wiring extension portions GG11 is shorter than half of the distance between the first gate wiring portion GG1 and the second gate wiring portion GG2.

[0079] The plurality of second gate wiring extension portions GG21 extend from the second gate wiring portion GG2 toward the first gate wiring portion GG1. The length of each of the plurality of second gate wiring extension portions GG21 is shorter than half of the distance between the first gate wiring portion GG1 and the second gate wiring portion GG2.

[0080] The plurality of first gate wiring extension portions GG11 are associated with the plurality of two-way switches 1 in a one-to-one manner. Each of the plurality of first gate wiring extension portions GG11 is adjacent to the associated two-way switch 1 (the third side 13) among the plurality of two-way switches 1. In the present embodiment, between the first gate wiring extension portion GG11 and the two-way switch 1 that are associated with each other in a one-to-one manner, the first gate wiring extension portion GG11 is electrically connected to the first gate electrode pad G1 of the two-way switch 1 via a connection member (first gate line WG1).

[0081] The plurality of second gate wiring extension portions GG21 are associated with the plurality of two-way switches 1 in a one-to-one manner. Each of the plurality of second gate wiring extension portions GG21 is adjacent to the associated two-way switch 1 (the third side 13) among the plurality of two-way switches 1. In the present embodiment, between the second gate wiring extension portion GG21 and the two-way switch 1 that are associated with each other in a one-to-one manner, the second gate wiring extension portion GG21 is electrically connected to the second gate electrode pad G2 of the two-way switch 1 via a connection member (second gate line WG2).

[0082] On the mounting plate 200, the plurality of first gate wiring extension portions GG11 and the plurality of second gate wiring extension portions GG21 correspond to each other in a one-to-one manner, and each of the first gate wiring extension portions GG11 and the corresponding second gate wiring extension portion GG21 among the second gate wiring extension portions GG21 are arranged such that their respective front ends face each other.

[0083] On the mounting board 200, the first gate wiring portion GG1 and the second gate wiring portion GG2 are arranged to be symmetric with respect to the center line aligned with the long side direction in the plan view, and the first source wiring portion SS1 and the second source wiring portion SS2 are also arranged to be symmetric with respect to the center line in the plan view. In addition, on the mounting board 200, a plurality of first gate wiring extension portions GG11 and a plurality of second gate wiring extension portions GG21 are also arranged to be symmetric with respect to the center line in the plan view.

[0084] (2.3) Other components of the bidirectional switch module

[0085] The bidirectional switch module 100 further includes a first source line WS1, a first gate line WG1, a second gate line WG2, and a second source line WS2.

[0086] The first source line WS1, the first gate line WG1, the second gate line WG2, and the second source line WS2 are each bonding wires.

[0087] Each first source line WS1 electrically connects the first source electrode 71 of the associated bidirectional switch 1 in the bidirectional switch 1 to the first source wiring portion SS1 of the mounting board 200. More specifically, each first source line WS1 electrically connects the first source electrode pad S1 connected to its associated first source electrode 71 to the first source wiring portion SS1. The bidirectional switch module 100 provides a plurality of (e.g., eleven in the Figure 1 illustrated example) first source lines WS1 for connecting the first source electrode pads S1 of the bidirectional switch 1 to the first source wiring portion SS1. The plurality of first source lines WS1 have substantially the same length.

[0088] Each first gate line WG1 electrically connects the first gate electrode 81 of the associated bidirectional switch 1 in the bidirectional switch 1 to the first gate wiring portion GG1. More specifically, each first gate line WG1 electrically connects the first gate electrode pad G1 connected to its associated first gate electrode 81 to the associated first gate wiring extension portion GG11 among the first gate wiring extension portions GG11 extending from the first gate wiring portion GG1. The bidirectional switch module 100 provides a single first gate line WG1 for each bidirectional switch 1 to connect the first gate electrode pad G1 of the bidirectional switch 1 to the associated first gate wiring extension portion GG11. The first gate line WG1 is shorter than the first source line WS1.

[0089] Each second gate line WG2 electrically connects the second gate electrode 82 of the associated bilateral switch 1 in the bilateral switch 1 to the second gate wiring portion GG2. More specifically, each second gate line WG2 electrically connects the second gate electrode pad G2 connected to its associated second gate electrode 82 to the associated second gate wiring extension GG21 in the second gate wiring extension GG21 extending from the second gate wiring portion GG2. The bilateral switch module 100 provides a single second gate line WG2 for each bilateral switch 1 to connect the second gate electrode pad G2 of the bilateral switch 1 to the associated second gate wiring extension GG21. The second gate line WG2 has substantially the same length as the first gate line WG1.

[0090] Each second source line WS2 electrically connects the second source electrode 72 of the associated bilateral switch 1 in the bilateral switch 1 to the second source wiring portion SS2 of the mounting board 200. More specifically, each second source line WS2 electrically connects the second source electrode pad S2 connected to its associated second source electrode 72 to the second source wiring portion SS2. The bilateral switch module 100 provides a plurality (e.g., eleven in the Figure 1 illustrated example) of second source lines WS2 for each bilateral switch 1 to connect the second source electrode pad S2 of the bilateral switch 1 to the second source wiring portion SS2. The plurality of second source lines WS2 have substantially the same length. The second source line WS2 has substantially the same length as the first source line WS1.

[0091] Optionally, the bilateral switch module 100 may further include a resin layer encapsulating the plurality of bilateral switches 1 on the mounting board 200. In this case, the resin layer has electrical insulation properties. The resin layer may be made of, for example, an epoxy resin containing a black pigment and has opacity. Alternatively, the mounting board 200 may form part of a package that houses the plurality of bilateral switches 1.

[0092] (3) Advantages

[0093] The bilateral switch module 100 according to the first embodiment includes a plurality of bilateral switches 1 and a mounting board 200. Each bilateral switch 1 among the plurality of bilateral switches 1 includes a first source electrode 71, a first gate electrode 81, a second gate electrode 82, and a second source electrode 72. The plurality of bilateral switches 1 are mounted on the mounting board 200. In the bilateral switch module 100, the plurality of bilateral switches 1 are connected in parallel.

[0094] According to this structure, the bilateral switch module 100 according to the first embodiment includes a plurality of bilateral switches 1 connected in parallel, so that a larger amount of current can flow through itself, thus helping to meet the demand for further increasing the amount of current to be supplied.

[0095] In addition, in the bidirectional switch module 100 according to the first embodiment, a plurality of bidirectional switches 1 are mounted as bare chips on a single mounting board 200, thereby enabling a larger amount of current to flow through itself while reducing its overall size.

[0096] Furthermore, in the bidirectional switch module 100 according to the first embodiment, the first gate line WG1 and the second gate line WG2 can be made substantially the same length, thereby reducing the chance that one of the first gate signal supplied to the first gate electrode pad G1 of the bidirectional switch 1 and the second gate signal supplied to the second gate electrode pad G2 is delayed relative to the other gate signal. This can help improve the switching speed.

[0097] Moreover, in the bidirectional switch module 100 according to the first embodiment, in the plan view of the mounting board 200, the first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 are arranged side by side in this order, and a plurality of bidirectional switches 1 are located between the first gate wiring portion GG1 and the second gate wiring portion GG2. Therefore, in the bidirectional switch module 100 according to the first embodiment, the lengths of the first gate line WG1 and the second gate line WG2 can be easily shortened, thereby enabling the parasitic inductance of the first gate line WG1 and the second gate line WG2 to be reduced.

[0098] In addition, in the bidirectional switch module 100 according to the first embodiment, the mounting board 200 further includes a plurality of first gate wiring extension portions GG11 and a plurality of second gate wiring extension portions GG21. Therefore, in the bidirectional switch module 100 according to the first embodiment, the lengths of the first gate line WG1 and the second gate line WG2 can be further easily shortened, thereby enabling the parasitic inductance of the first gate line WG1 and the second gate line WG2 to be further reduced.

[0099] (First modification of the first embodiment)

[0100] Next, the bidirectional switch module 100A according to the first modification will be described with reference to Figure 4 .

[0101] The bidirectional switch module 100A according to the first modification includes a mounting board 200A in place of the mounting board 200 of the bidirectional switch module 100 according to the first embodiment, which is the main difference from the bidirectional switch module 100 according to the first embodiment. In the following description, any component in the bidirectional switch module 100A according to this first modification that has the same function as the corresponding part of the bidirectional switch module 100 according to the above first embodiment will be designated by the same reference numeral as that corresponding part, and the description of this component will be appropriately omitted here.

[0102] The mounting board 200A includes a conductor portion 203. Each substrate 2 of the plurality of bidirectional switches 1 is electrically connected to the conductor portion 203. The conductor portion 203 includes a plurality of die pad portions 204. The plurality of die pad portions 204 are associated with the plurality of bidirectional switches 1 in a one-to-one manner. On each of the plurality of die pad portions 204 in the plurality of die pad portions 204, the associated bidirectional switch 1 of the bidirectional switches 1 is mounted, whereby each die pad portion 204 is electrically and mechanically connected to its associated bidirectional switch 1. Note that the joint portion that joins each substrate 2 to its associated die pad portion 204 may be made of a conductive resin paste including metal particles (particularly, a silver paste in which silver particles are dispersed), and is suitably made of sintered silver. However, this is merely an example and should not be construed as restrictive. Alternatively, the joint portion may also be made of solder. Sintered silver is a sintered body formed by sintering silver particles together. Sintered silver is porous silver. Alternatively, the substrate 2 and the die pad portion 204 may also be joined together by, for example, eutectic bonding or surface activated bonding.

[0103] The conductor portion 203 is located between a first gate wiring portion GG1 and a second gate wiring portion GG2 on the insulating substrate 201 and is away from the first gate wiring portion GG1 and the second gate wiring portion GG2. The conductor portion 203 is electrically insulated from the first gate wiring portion GG1 and the second gate wiring portion GG2. Regarding the width of the conductor portion 203 measured in the direction in which the first gate wiring portion GG1 and the second gate wiring portion GG2 are arranged, the wiring portion of the conductor portion 203 located between a first gate wiring extension portion GG11 and a second gate wiring extension portion GG21 is narrower than the width of the die pad portion 204. The wiring portion is separated from and electrically insulated from the first gate wiring extension portion GG11 and the second gate wiring extension portion GG21.

[0104] The bidirectional switch module 100A according to the first modification example causes, for example, the substrate 2 of each of the plurality of bidirectional switches 1 to be connected to a constant potential node via the conductor portion 203. This enables the bidirectional switch module 100A according to the first modification example to reduce current collapse as compared with the case where the substrate 2 is allowed to have a floating potential in the bidirectional switch module 100 according to the first embodiment. The constant potential node does not have to be a potential node where the potential becomes completely constant, but may also be a potential node that can be regarded as having a substantially constant potential during the on-state period of the bidirectional switch module 100A. The on-state period of the bidirectional switch module 100A is substantially the same as the on-state period of the bidirectional switch 1. The constant potential node may be the output terminal having the lower potential among a pair of output terminals of the diode bridge included in the rectifier smoothing circuit. The potential at the constant potential node may be a positive potential or a negative potential with respect to the ground terminal. If the constant potential node has a negative potential, current collapse can be reduced as long as the absolute value of the negative potential is equal to or less than a predetermined value (for example, 150V). Note that the predetermined value varies, for example, according to the thickness of the substrate 2 of the bidirectional switch 1, the thickness of the multilayer stack 10 (see Figure 3 ), the crystal structure of the multilayer stack 10, and the difference in crystallinity between the multilayer stacks 10.

[0105] In the bidirectional switch module 100A according to the first modification example, as in the bidirectional switch module 100 according to the first embodiment, the plurality of bidirectional switches 1 are also connected in parallel, which helps to allow a larger amount of current to flow through itself.

[0106] (Second modification example of the first embodiment)

[0107] Next, the bidirectional switch module 100B according to the second modification example will be described with reference to Figure 5 .

[0108] The bidirectional switch module 100B according to the second modification example includes a mounting plate 200B instead of the mounting plate 200 of the bidirectional switch module 100 according to the first embodiment, which is the main difference from the bidirectional switch module 100 according to the first embodiment. In the following description, any constituent element having the same function as the corresponding part of the bidirectional switch module 100 according to the above first embodiment in the bidirectional switch module 100B according to this second modification example will be designated by the same reference numeral as that corresponding part, and the description of this constituent element will be appropriately omitted here.

[0109] On the mounting plate 200B, the first gate wiring portion GG1, the first source wiring portion SS1, the second source wiring portion SS2, and the second gate wiring portion GG2 are arranged side by side in this order in a plan view.

[0110] In addition, the bidirectional switch module 100B according to the second modification example includes two bidirectional switches 1A instead of two of the three bidirectional switches 1 of the bidirectional switch module 100 according to the first embodiment. In each of the two bidirectional switches 1A, the directions in which the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2 are arranged in the plan view are opposite to those of the bidirectional switch 1. In addition, in each of the two bidirectional switches 1A, Figure 2 the directions in which the shown first source electrode 71, first gate electrode 81, second gate electrode 82, and second source electrode 72 are arranged are also opposite to those of the bidirectional switch 1.

[0111] Each of the plurality of bidirectional switches 1A, 1, 1A is mounted on an associated die pad portion 205 among the plurality of die pad portions 205 of the mounting board 200B. The plurality of die pad portions 205 and the plurality of bidirectional switches 1A, 1, 1A are provided between the first source wiring portion SS1 and the second source wiring portion SS2 and do not contact the first source wiring portion SS1 and the second source wiring portion SS2.

[0112] In addition, in the bidirectional switch module 100B according to the second modification example, the mounting board 200B further includes a plurality of (e.g., two) first source wiring extension portions SS11 and a plurality of (e.g., two) second source wiring extension portions SS21.

[0113] The plurality of first source wiring extension portions SS11 extend from the first source wiring portion SS1 toward the second source wiring portion SS2.

[0114] The plurality of second source wiring extension portions SS21 extend from the second source wiring portion SS2 toward the first source wiring portion SS1.

[0115] On the mounting board 200B, the plurality of first source wiring extension portions SS11 and the plurality of second source wiring extension portions SS21 are alternately arranged one by one.

[0116] In the bidirectional switch module 100B according to the second modification example, one of the plurality of bidirectional switches 1A, 1, 1A is respectively located between each pair of adjacent first source wiring extension portions SS11 and second source wiring extension portions SS21 among the plurality of first source wiring extension portions SS11 and the plurality of second source wiring extension portions SS21. In Figure 5 the shown example, the second source wiring extension portion SS21, the bidirectional switch 1A, the first source wiring extension portion SS11, the bidirectional switch 1, another second source wiring extension portion SS21, another bidirectional switch 1A, and another first source wiring extension portion SS11 are arranged side by side in this order from left to right.

[0117] A plurality of bilateral switches 1A, 1, 1A are separated from the first source wiring portion SS1 and the second source wiring portion SS2 in the direction in which the first source wiring portion SS1 and the second source wiring portion SS2 are arranged. In addition, each of the plurality of bilateral switches 1A, 1, 1A is also separated from the adjacent first source wiring extension portion SS11 and the second source wiring extension portion SS21 in the direction in which the plurality of bilateral switches 1A, 1, 1A are arranged side by side.

[0118] In the bilateral switch module 100B according to the second modification example, the first gate electrode pad G1 of each of the plurality of bilateral switches 1A, 1, 1A is electrically connected to the first gate wiring portion GG1 of the mounting plate 200B via the first gate line WG1.

[0119] In addition, in the bilateral switch module 100B according to the second modification example, the second gate electrode pad G2 of each of the plurality of bilateral switches 1A, 1, 1A is electrically connected to the second gate wiring portion GG2 of the mounting plate 200B via the second gate line WG2.

[0120] Furthermore, in the bilateral switch module 100B according to the second modification example, the first source electrode pad S1 of each of the plurality of bilateral switches 1A, 1, 1A is electrically connected to the associated first source wiring extension portion SS11 in the first source wiring extension portion SS11 of the mounting plate 200B via a plurality of first source lines WS1.

[0121] Furthermore, in the bilateral switch module 100B according to the second modification example, the second source electrode pad S2 of each of the plurality of bilateral switches 1A, 1, 1A is electrically connected to the associated second source wiring extension portion SS21 in the second source wiring extension portion SS21 of the mounting plate 200B via a plurality of second source lines WS2.

[0122] In the bilateral switch module 100B according to the second modification example, the plurality of bilateral switches 1A, 1, 1A are connected in parallel, thereby, like the bilateral switch module 100 according to the first embodiment, contributing to allowing a larger amount of current to flow through itself.

[0123] (Third Modification Example of the First Embodiment)

[0124] Next, the bilateral switch module 100C according to the third modification example will be described with reference to Figure 6 to.

[0125] The bidirectional switch module 100C according to the third modification example includes a mounting board 200C in place of the mounting board 200B of the bidirectional switch module 100B according to the second modification example of the first embodiment, which is the main difference from the bidirectional switch module 100B. In the following description, any component in the bidirectional switch module 100C according to this third modification example that has the same function as the corresponding part of the bidirectional switch module 100B according to the second modification example of the above first embodiment will be designated by the same reference numeral as that corresponding part, and the description of this component will be appropriately omitted here.

[0126] On the mounting board 200C, the second gate wiring portion GG2 and the first gate wiring portion GG1 are arranged side by side in a plan view, and the first source wiring portion SS1 and the second source wiring portion SS2 are arranged side by side in a plan view. The distance between the second gate wiring portion GG2 and the first gate wiring portion GG1 is set wide enough to ensure a predetermined insulation distance and is longer than the distance between the first gate wiring portion GG1 and the first source wiring portion SS1. In this modification example, on the mounting board 200C, the second gate wiring portion GG2, the first gate wiring portion GG1, the first source wiring portion SS1, and the second source wiring portion SS2 are arranged side by side in this order. However, this is only an example and should not be construed as restrictive. Alternatively, the first gate wiring portion GG1, the second gate wiring portion GG2, the first source wiring portion SS1, and the second source wiring portion SS2 may be arranged in this order. Alternatively, the second gate wiring portion GG2, the first gate wiring portion GG1, the second source wiring portion SS2, and the first source wiring portion SS1 may be arranged in this order.

[0127] Each of the plurality of bidirectional switches 1A, 1, 1A is mounted on an associated die pad portion 205 among the plurality of die pad portions 205 of the mounting board 200C. The plurality of die pad portions 206 and the plurality of bidirectional switches 1A, 1, 1A are provided between the first source wiring portion SS1 and the second source wiring portion SS2 and do not contact the first source wiring portion SS1 and the second source wiring portion SS2.

[0128] In the bidirectional switch module 100C according to the third modification example, the plurality of bidirectional switches 1A, 1, 1A are connected in parallel, so like the bidirectional switch module 100B according to the second modification example of the first embodiment, it helps to allow a larger amount of current to flow through itself.

[0129] (Second Embodiment)

[0130] Next, the bidirectional switch module 100D according to the second embodiment will be described with reference to Figure 7 and Figure 8 .

[0131] The bidirectional switch module 100D according to the second embodiment includes a plurality of bidirectional switches 1B instead of the plurality of bidirectional switches 1 of the bidirectional switch module 100 according to the first embodiment, which is the main difference from the bidirectional switch module 100. Additionally, the bidirectional switch module 100D according to the second embodiment includes a mounting board 200D instead of the mounting board 200 of the bidirectional switch module 100 according to the first embodiment, which is another main difference from the bidirectional switch module 100. In the following description, any component in the bidirectional switch module 100D according to the second embodiment that has the same function as the corresponding part of the bidirectional switch module 100 according to the above first embodiment will be designated by the same reference numeral as that corresponding part, and the description of this component will be appropriately omitted here.

[0132] The mounting board 200D does not include Figure 1 the first gate wiring extension GG11 and the second gate wiring extension GG21 of the mounting board 200 shown.

[0133] The bidirectional switch 1B is different from the bidirectional switch 1 in the layout of the first gate electrode pad G1, the second gate electrode pad G2, the first source electrode pad S1, and the second source electrode pad S2.

[0134] In the bidirectional switch 1B, as Figure 8 shown, the first source electrode pad S1 and the first gate electrode pad G1 are arranged along the first side 11. The first source electrode pad S1 and the first gate electrode pad G1 are arranged in a row. In the direction aligned with the first side 11, the first source electrode pad S1 is longer than the first gate electrode pad G1.

[0135] The second source electrode pad S2 and the second gate electrode pad G2 are arranged along the second side 12. The second source electrode pad S2 and the second gate electrode pad G2 are arranged in a row. In the direction aligned with the second side 12, the second source electrode pad S2 is longer than the second gate electrode pad G2.

[0136] In the bidirectional switch module 100D according to the second embodiment, each bidirectional switch 1B among the plurality of bidirectional switches 1B is mounted on the associated die pad portion 207 of the plurality of die pad portions 207 of the mounting board 200D. In the bidirectional switch module 100D, the first gate electrode pad G1 of each bidirectional switch 1B among the plurality of bidirectional switches 1B and the first gate wiring portion GG1 of the mounting board 200D are electrically connected together via the first gate line WG1.

[0137] Additionally, in the bidirectional switch module 100D, the second gate electrode pad G2 of each bidirectional switch 1B among the plurality of bidirectional switches 1B is electrically connected together with the second gate wiring portion GG2 of the mounting board 200D via the second gate line WG2.

[0138] In addition, in the bidirectional switch module 100D, the first source electrode pads S1 of each of the plurality of bidirectional switches 1B are electrically connected to the first source wiring portion SS1 of the mounting board 200D via a plurality of first source lines WS1.

[0139] In addition, in the bidirectional switch module 100D, the second source electrode pads S2 of each of the plurality of bidirectional switches 1B are electrically connected to the second source wiring portion SS2 of the mounting board 200D via a plurality of second source lines WS2. In the present embodiment, on the mounting board 200D, the first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 are arranged side by side in this order. However, this is merely an example and should not be construed as restrictive. Alternatively, the first gate wiring portion GG1, the first source wiring portion SS1, the second source wiring portion SS2, and the second gate wiring portion GG2 may be arranged in this order.

[0140] In the bidirectional switch module 100D according to the second embodiment, the plurality of bidirectional switches 1B are connected in parallel, thereby, like the bidirectional switch module 100 according to the first embodiment, contributing to allowing a larger amount of current to flow through itself.

[0141] (Third Embodiment)

[0142] Next, reference will be made to Figure 9 、 Figure 10 A and Figure 10 B to describe the bidirectional switch module 100E according to the third embodiment.

[0143] The bidirectional switch module 100E according to the third embodiment includes a plurality of bidirectional switches 1D, 1C, 1D instead of the plurality of bidirectional switches 1A, 1, 1A of the bidirectional switch module 100B according to the second modification of the first embodiment (see Figure 5 ), which is the main difference from the bidirectional switch module 100B according to the second modification of the first embodiment. In the following description, any component having the same function as the corresponding part of the bidirectional switch module 100B according to the second modification of the above first embodiment in the bidirectional switch module 100E according to this third embodiment will be designated by the same reference numeral as that corresponding part, and the description of this component will be appropriately omitted here.

[0144] In the bidirectional switch 1C, as Figure 10 A shows, the first source electrode pad S1 is arranged along the first side 11. The second source electrode pad S2 is arranged along the second side 12. The first gate electrode pad G1 is arranged along the third side 13. The second gate electrode pad G2 is arranged along the fourth side 14.

[0145] In the bilateral switch 1C, the distance between the first gate electrode pad G1 and the first source electrode pad S1 is shorter than the distance between the first gate electrode pad G1 and the second source electrode pad S2, and the distance between the second gate electrode pad G2 and the second source electrode pad S2 is shorter than the distance between the second gate electrode pad G2 and the first source electrode pad S1.

[0146] In the bilateral switch 1D, if the first side 11 and the second side 12 are swapped with each other with respect to the bilateral switch 1C, then as Figure 10 shown in B, the first source electrode pad S1 is arranged along the first side 11. The second source electrode pad S2 is arranged along the second side 12. The first gate electrode pad G1 is arranged along the third side 13. The second gate electrode pad G2 is arranged along the fourth side 14.

[0147] In addition, in the bilateral switch 1D, the distance between the first gate electrode pad G1 and the first source electrode pad S1 is shorter than the distance between the first gate electrode pad G1 and the second source electrode pad S2.

[0148] Furthermore, in the bilateral switch 1D, the distance between the second gate electrode pad G2 and the second source electrode pad S2 is shorter than the distance between the second gate electrode pad G2 and the first source electrode pad S1.

[0149] Therefore, in the plan view, the bilateral switch 1C is a mirror image of the bilateral switch 1D.

[0150] In the bilateral switch module 100E, three bilateral switches 1D, 1C, 1D are arranged side by side in the order of the bilateral switch 1D, the bilateral switch 1C, and the bilateral switch 1D from left to right. In the bilateral switch module 100E, the bilateral switches 1D, 1C, 1D are respectively mounted on the associated die pad portions 205 among the plurality (three) of die pad portions 205 of the mounting board 200B. Figure 9 In the bilateral switch module 100E, the plurality of bilateral switches 1D, 1C, 1D are connected in parallel, whereby, like the bilateral switch module 100B according to the second modification of the first embodiment, it helps to allow a larger amount of current to flow through itself.

[0151] In addition, the bilateral switch module 100E includes a plurality of bilateral switches 1D, 1C, 1D instead of the bilateral switches 1A, 1, 1A of the bilateral switch module 100B (see

[0152] ), whereby the respective lengths of the first gate line WG1 and the second gate line WG2 can be made substantially equal to each other. Therefore, the bilateral switch module 100E can reduce the difference in parasitic inductance between the first gate line WG1 and the second gate line WG2. Figure 5 ) and thus can reduce the difference in parasitic inductance between the first gate line WG1 and the second gate line WG2.

[0153] (Fourth Embodiment)

[0154] Next, with reference to Figure 11 and Figure 12 the bidirectional switch module 100F according to the fourth embodiment will be described.

[0155] The bidirectional switch module 100F according to the fourth embodiment includes a plurality of bidirectional switches 1E in place of the plurality of bidirectional switches 1D, 1C, 1D of the bidirectional switch module 100E according to the third embodiment, which is the main difference from the bidirectional switch module 100E according to the third embodiment. In the following description, any component having the same function as the corresponding part of the bidirectional switch module 100E according to the above third embodiment in the bidirectional switch module 100F according to this fourth embodiment will be designated by the same reference numeral as that corresponding part, and the description of this component will be appropriately omitted here.

[0156] As Figure 12 shown, the bidirectional switch 1E includes a first source electrode pad S1, two first gate electrode pads G1, two second gate electrode pads G2, and a second source electrode pad S2.

[0157] The first source electrode pad S1 is electrically connected to a plurality of first source electrode comb teeth 711.

[0158] The two first gate electrode pads G1 are electrically connected to a plurality of first gate electrode comb teeth 811.

[0159] The two second gate electrode pads G2 are electrically connected to a plurality of second gate electrode comb teeth 821.

[0160] The second source electrode pad S2 is electrically connected to a plurality of second source electrode comb teeth 721.

[0161] The bidirectional switch 1E has a first side 11 and a second side 12 that are parallel to each other in a plan view, and a third side 13 and a fourth side 14 that are parallel to each other in a plan view.

[0162] The first source electrode pad S1 is arranged along the first side 11, and the second source electrode pad S2 is arranged along the second side 12.

[0163] One of the two first gate electrode pads G1 and one of the two second gate electrode pads G2 are arranged along the third side 13. Between the first end 111 of the first source electrode pad S1 and the first end 121 of the second source electrode pad S2, this one first gate electrode pad G1 is located closer to the first source electrode pad S1, and this one second gate electrode pad G2 is located closer to the second source electrode pad S2.

[0164] Another first gate electrode pad G1 of the two first gate electrode pads G1 and another second gate electrode pad G2 of the two second gate electrode pads G2 are arranged along the fourth side 14. Between the second end 112 of the first source electrode pad S1 and the second end 122 of the second source electrode pad S2, the another first gate electrode pad G1 is located closer to the first source electrode pad S1, and the another second gate electrode pad G2 is located closer to the second source electrode pad S2.

[0165] In the bidirectional switch module 100F according to the fourth embodiment, a plurality of bidirectional switches 1E are arranged such that: the first source electrode pads S1 and the second source electrode pads S2 of each bidirectional switch 1E among the plurality of bidirectional switches 1E are adjacent to the first source wiring extension SS11 and the second source wiring extension SS21 of the mounting board 200B, and the first source wiring extension SS11 and the second source wiring extension SS21 are respectively associated with the first source electrode pad S1 and the second source electrode pad S2. In this embodiment, each bidirectional switch 1E among the plurality of bidirectional switches 1E is mounted on the associated die pad portion 205 of the plurality of die pad portions 205 of the mounting board 200B. Therefore, in Figure 11 the example shown, in the bidirectional switch 1E at the left end and the bidirectional switch 1E at the right end, the fourth side 14 is located closer to the first gate wiring portion GG1, and the third side 13 is located closer to the second gate wiring portion GG2. In addition, in Figure 11 the example shown, in the bidirectional switch 1E in the middle, the third side 13 is located closer to the first gate wiring portion GG1, and the fourth side 14 is located closer to the second gate wiring portion GG2.

[0166] In the bidirectional switch module 100F, the plurality of bidirectional switches 1E are connected in parallel, so like the bidirectional switch module 100E according to the third embodiment, it helps to allow a larger amount of current to flow through itself.

[0167] In addition, in the bidirectional switch module 100F, each bidirectional switch 1E among the plurality of bidirectional switches 1E includes two first gate electrode pads G1 and two second gate electrode pads G2, thereby enabling the respective lengths of the first gate line WG1 and the second gate line WG2 to be substantially equal to each other.

[0168] Furthermore, in the bidirectional switch module 100F, chips having the same structure can be used as the plurality of bidirectional switches 1E, which helps to reduce costs.

[0169] (Fifth Embodiment)

[0170] Next, the bidirectional switch module 100G according to the fifth embodiment will be described with reference to Figure 13 the following.

[0171] The bidirectional switch module 100G according to the fifth embodiment includes a bidirectional switch 1G in place of the middle one of the three bidirectional switches 1 arranged side by side in the bidirectional switch module 100 according to the first embodiment, which is the main difference from the bidirectional switch module 100 according to the first embodiment. In addition, the bidirectional switch module 100G according to the fifth embodiment includes a mounting plate 200G in place of the mounting plate 200 of the bidirectional switch module 100 according to the first embodiment, which is another main difference from the bidirectional switch module 100 according to the first embodiment. In the following description, any component in the bidirectional switch module 100G according to the fifth embodiment that has the same function as the corresponding part of the bidirectional switch module 100 according to the above first embodiment will be designated by the same reference numeral as that corresponding part, and the description of this component will be appropriately omitted here.

[0172] The bidirectional switch 1G has substantially the same structure as the bidirectional switch 1 and is a mirror image of the bidirectional switch 1 in a plan view.

[0173] In the bidirectional switch 1, the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2 are arranged side by side along the third side among the third side and the fourth side and close to the third side. On the other hand, in the bidirectional switch 1G, the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2 are arranged side by side along the fourth side 14. Optionally, the bidirectional switch 1G can use the same chip as the bidirectional switch 1 by using the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2 of the bidirectional switch 1 as the second source electrode pad S2, the second gate electrode pad G2, the first gate electrode pad G1, and the first source electrode pad S1, respectively.

[0174] In addition, in the bidirectional switch module 100G, the first gate electrode pad G1 of the left bidirectional switch 1 among the three bidirectional switches 1, 1G, 1 and the first gate electrode pad G1 of the middle bidirectional switch 1G among the three bidirectional switches 1, 1G, 1 are connected to the same first gate wiring extension GG11. Further, in the bidirectional switch module 100G, the second gate electrode pad G2 of the left bidirectional switch 1 among the three bidirectional switches 1, 1G, 1 and the second gate electrode pad G2 of the middle bidirectional switch 1G among the three bidirectional switches 1, 1G, 1 are connected to the same second gate wiring extension GG21.

[0175] In addition, in the two-way switch module 100G, no first gate wiring extension GG11 or second gate wiring extension GG21 is arranged between the middle two-way switch 1G and the right two-way switch 1 among the three two-way switches 1, 1G, and 1. Therefore, the two-way switch module 100G according to the fifth embodiment can increase the mounting density compared with the two-way switch module 100 according to the first embodiment.

[0176] In addition, in the two-way switch module 100G according to the fifth embodiment, a plurality of two-way switches 1, 1G, and 1 are connected in parallel. Therefore, like the two-way switch module 100 according to the first embodiment, it helps to allow a larger amount of current to flow through itself.

[0177] (Modification example)

[0178] Note that the above embodiments are only typical embodiments among various embodiments of the present invention and should not be construed as restrictive. On the contrary, these typical embodiments can be easily modified in various ways according to design choices or any other factors without departing from the scope of the present invention.

[0179] For example, the number of two-way switches 1 in the two-way switch module 100 according to the first embodiment does not have to be three, but can also be two or even four or more. The same statement applies to the first to third modification examples of the first embodiment and the second to fifth embodiments.

[0180] In addition, in the two-way switch module 100 according to the first embodiment, a plurality of two-way switches 1 do not have to be arranged in a row, but can also be arranged in multiple rows (for example, two rows) or in an L-shaped pattern. The arrangement patterns of the first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 can be appropriately changed according to the arrangement of the plurality of two-way switches 1. In this case, the number of the provided first source wiring portion SS1, first gate wiring portion GG1, second gate wiring portion GG2, or second source wiring portion SS2 does not have to be one, but can also be two or more. Similarly, for the first to third modification examples of the first embodiment and the second to fifth embodiments, a plurality of two-way switches can also be arranged in multiple rows.

[0181] Optionally, each of the plurality of two-way switches 1 in the two-way switch module 100 according to the first embodiment can be replaced with the two-way switch 1A of the two-way switch module 100B according to the second modification example of the first embodiment or the two-way switch 1B of the two-way switch module 100D according to the second embodiment, whichever is appropriate.

[0182] In addition, the conductor portion 203 of the bidirectional switch module 100A according to the first modification of the first embodiment can also be applied to any of the second and third modifications of the first embodiment and the second to fourth embodiments.

[0183] In addition, each of the bidirectional switches 1-1G may include one or more nitride semiconductor layers between the buffer layer 3 and the first nitride semiconductor layer 4. Further, the buffer layer 3 does not have to have a single-layer structure, but may have, for example, a superlattice structure.

[0184] In addition, each of the bidirectional switches 1-1G includes a first p-type layer 61 and a second p-type layer 62. However, this is merely an example and should not be construed as restrictive. Alternatively, the bidirectional switch 1-1G may not include the first p-type layer 61 and the second p-type layer 62.

[0185] In addition, the substrate 2 does not have to be a silicon substrate, but may also be a GaN substrate, an SiC substrate, or any other suitable substrate.

[0186] In addition, the bidirectional switch 1 does not have to be a lateral transistor, but may also be a vertical transistor.

[0187] In addition, the first gate electrode pad G1 and the second gate electrode pad G2 do not have to have a square shape in a plan view, but may also have a circular, rectangular, or any other appropriate planar shape.

[0188] In addition, in the above-described embodiments and their modifications, each of the bidirectional switches 1-1E and 1G has a square shape in a plan view. However, this is merely an example and should not be construed as restrictive. Alternatively, each of the bidirectional switches 1-1E and 1G may have a rectangular shape in a plan view. If the bidirectional switches 1-1E and 1G have a rectangular planar shape, the lengths of the third side 13 and the fourth side 14 are appropriately shortened compared to the sides of the square bidirectional switches 1-1E and 1G, and the lengths of the first side 11 and the second side 12 are appropriately extended compared to the sides of the square bidirectional switches 1-1E and 1G. In this case, shortening the lengths of each of the first source electrode comb teeth portion 711, the first gate electrode comb teeth portion 811, the second gate electrode comb teeth portion 821, and the second source electrode comb teeth portion 721 enables reduction of the on-state resistance. In addition, increasing the number of the first source electrode comb teeth portion 711, the first gate electrode comb teeth portion 811, the second gate electrode comb teeth portion 821, and the second source electrode comb teeth portion 721 enables a larger amount of current to flow through the bidirectional switches 1-1E and 1G.

[0189] In addition, each of the mounting boards 200-200D and 200G may also be a multilayer board (such as a multilayer ceramic board or the like). Further, in each of the mounting boards 200-200D and 200G, each of the first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 may have a single-layer structure or a multilayer structure, and either is appropriate.

[0190] In addition, the first source electrode pad S1, the first gate electrode pad G1, the second gate electrode pad G2, and the second source electrode pad S2 of the bidirectional switch 1 and the first source wiring portion SS1, the first gate wiring portion GG1, the second gate wiring portion GG2, and the second source wiring portion SS2 of the mounting board 200 do not have to be connected via the first source line WS1, the first gate line WG1, the second gate line WG2, and the second source line WS2, but may also be connected via a strip-shaped conductive member or by a flip-chip bonding technique.

[0191] The bidirectional switch module 100-100G can be applied, for example, to various types of electrical devices such as a multilevel inverter, a dimmer, and a matrix converter for performing AC-AC power conversion.

[0192] (In each aspect)

[0193] The above-described embodiments and their modified examples may be specific implementations of the following aspects of the present invention.

[0194] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the first aspect includes a plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) and a mounting board (200; 200A; 200C; 200D; 200G). Each bidirectional switch among the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) includes a first source electrode (71), a first gate electrode (81), a second gate electrode (82), and a second source electrode (72). On the mounting board (200; 200A; 200C; 200D; 200G), a plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) are mounted. In the bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G), the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) are connected in parallel.

[0195] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the first aspect can help a large amount of current to flow through itself.

[0196] In a bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to a second aspect that can be implemented in combination with the first aspect, each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) is a lateral transistor.

[0197] Compared with a case where each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) is a vertical transistor, the bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the second aspect can help increase the switching speed.

[0198] In a bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to a third aspect that can be implemented in combination with the second aspect, each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) includes a substrate (2), a first nitride semiconductor layer (4), and a second nitride semiconductor layer (5). The first nitride semiconductor layer (4) is formed above the substrate (2). The second nitride semiconductor layer (5) is formed on the first nitride semiconductor layer (4). The second nitride semiconductor layer (5) has a larger bandgap than the first nitride semiconductor layer (4). In each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G), a first source electrode (71), a first gate electrode (81), a second gate electrode (82), and a second source electrode (72) are formed on or above the second nitride semiconductor layer (5).

[0199] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the third aspect can help reduce the resistance.

[0200] In a bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to a fourth aspect that can be implemented in combination with the third aspect, each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) further includes a first p-type layer (61) and a second p-type layer (62). The first p-type layer (61) is interposed between the first gate electrode (81) and the second nitride semiconductor layer (5). The second p-type layer (62) is interposed between the second gate electrode (82) and the second nitride semiconductor layer (5).

[0201] In the bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the fourth aspect, each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) can be implemented as a normally-off transistor.

[0202] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the fifth aspect can be implemented in combination with the fourth aspect. In each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G), the substrate (2) is conductive. The substrate (2) is electrically insulated from all of the first source electrode (71), the second source electrode (72), the first gate electrode (81), and the second gate electrode (82). The mounting plate (200; 200A; 200C; 200D; 200G) includes a conductor portion (203), and the respective substrates (2) of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) are electrically connected to the conductor portion (203). The conductor portion (203) includes a plurality of die pad portions (204). The plurality of die pad portions (204) are associated with the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) in a one-to-one manner. Each of the plurality of die pad portions (204) mounts the associated bidirectional switch among the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G).

[0203] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the fifth aspect enables each of the substrates (2) of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) to be connected to a constant potential node via the conductor portion (203), thereby enabling reduction of current collapse.

[0204] The bidirectional switch module (100; 100A) according to the sixth aspect can be implemented in combination with any one of the first to fifth aspects. In each of the plurality of bidirectional switches (1; 1A), the first source electrode (71) includes a plurality of first source electrode comb teeth portions (711). The first gate electrode (81) includes a plurality of first gate electrode comb teeth portions (811). The second gate electrode (82) includes a plurality of second gate electrode comb teeth portions (821). The second source electrode (72) includes a plurality of second source electrode comb teeth portions (721). The plurality of first source electrode comb teeth portions (711) and the plurality of second source electrode comb teeth portions (721) are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions (711) and second source electrode comb teeth portions (721), one of the plurality of first gate electrode comb teeth portions (811) and one of the plurality of second gate electrode comb teeth portions (821) are arranged side by side in this order from the first source electrode comb teeth portion (711) toward the second source electrode comb teeth portion (721). Each of the plurality of bidirectional switches (1; 1A) further includes a first source electrode pad (S1), a first gate electrode pad (G1), a second gate electrode pad (G2), and a second source electrode pad (S2). The first source electrode pad (S1) is electrically connected to the plurality of first source electrode comb teeth portions (711). The first gate electrode pad (G1) is electrically connected to the plurality of first gate electrode comb teeth portions (811). The second gate electrode pad (G2) is electrically connected to the plurality of second gate electrode comb teeth portions (821). The second source electrode pad S2 is electrically connected to the plurality of second source electrode comb teeth portions (721). Each of the plurality of bidirectional switches (1; 1A) has a first side (11) and a second side (12) that are parallel to each other in a plan view and a third side (13) and a fourth side (14) that are parallel to each other in a plan view. The first source electrode pad (S1) is arranged along the first side (11). The second source electrode pad (S2) is arranged along the second side (12). The first gate electrode pad (G1) and the second gate electrode pad (G2) are arranged along the third side (13). In the direction aligned with the third side (13), the first source electrode pad (S1), the first gate electrode pad (G1), the second gate electrode pad (G2), and the second source electrode pad (S2) are arranged side by side in this order.

[0205] The bidirectional switch module (100; 100A) according to the sixth aspect can increase the number of the first source electrode comb teeth portions (711), the first gate electrode comb teeth portions (811), the second gate electrode comb teeth portions (821), and the second source electrode comb teeth portions (721), thereby helping a large amount of current to flow through itself.

[0206] The bidirectional switch module (100D) according to the seventh aspect can be implemented in combination with any one of the first aspect to the fifth aspect. In each of the plurality of bidirectional switches (1B), the first source electrode (71) includes a plurality of first source electrode comb teeth portions (711). The first gate electrode (81) includes a plurality of first gate electrode comb teeth portions (811). The second gate electrode (82) includes a plurality of second gate electrode comb teeth portions (821). The second source electrode (72) includes a plurality of second source electrode comb teeth portions (721). The plurality of first source electrode comb teeth portions (711) and the plurality of second source electrode comb teeth portions (721) are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions (711) and second source electrode comb teeth portions (721), one first gate electrode comb tooth portion (811) among the plurality of first gate electrode comb teeth portions (811) and one second gate electrode comb tooth portion (821) among the plurality of second gate electrode comb teeth portions (821) are arranged side by side in this order from the first source electrode comb tooth portion (711) toward the second source electrode comb tooth portion (721). Each of the plurality of bidirectional switches (1B) further includes a first source electrode pad (S1), a first gate electrode pad (G1), a second gate electrode pad (G2), and a second source electrode pad (S2). The first source electrode pad (S1) is electrically connected to the plurality of first source electrode comb teeth portions (711). The first gate electrode pad (G1) is electrically connected to the plurality of first gate electrode comb teeth portions (811). The second gate electrode pad (G2) is electrically connected to the plurality of second gate electrode comb teeth portions (821). The second source electrode pad (S2) is electrically connected to the plurality of second source electrode comb teeth portions (721). Each of the plurality of bidirectional switches (1B) has a first side (11) and a second side (12) that are parallel to each other in a plan view, and a third side (13) and a fourth side (14) that are parallel to each other in a plan view. The first source electrode pad (S1) and the first gate electrode pad (G1) are arranged along the first side (11). In the direction aligned with the first side (11), the first source electrode pad (S1) is longer than the first gate electrode pad (G1). The second source electrode pad (S2) and the second gate electrode pad (G2) are arranged along the second side (12). In the direction aligned with the second side (12), the second source electrode pad (S2) is longer than the second gate electrode pad (G2).

[0207] In the bidirectional switch module (100D) according to the seventh aspect, the wiring portions (i.e., the first gate wiring portion GG1 and the second gate wiring portion GG2) on the mounting board (200D) are used to connect a plurality of bidirectional switches (1B) in parallel, thereby making it possible to reduce the parasitic inductance with respect to the first gate signal to be supplied to the first gate electrode pad (G1) and the second gate signal to be supplied to the second gate electrode pad (G2).

[0208] The bidirectional switch module (100E) according to the eighth aspect can be implemented in combination with any one of the first to fifth aspects. In each of the plurality of bidirectional switches (1C; 1D), the first source electrode (71) includes a plurality of first source electrode comb teeth portions (711). The first gate electrode (81) includes a plurality of first gate electrode comb teeth portions (811). The second gate electrode (82) includes a plurality of second gate electrode comb teeth portions (821). The second source electrode (72) includes a plurality of second source electrode comb teeth portions (721). The plurality of first source electrode comb teeth portions (711) and the plurality of second source electrode comb teeth portions (721) are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions (711) and second source electrode comb teeth portions (721), one of the plurality of first gate electrode comb teeth portions (811) and one of the plurality of second gate electrode comb teeth portions (821) are arranged side by side in this order from the first source electrode comb teeth portion (711) toward the second source electrode comb teeth portion (721). Each of the plurality of bidirectional switches (1C; 1D) includes a first source electrode pad (S1), a first gate electrode pad (G1), a second gate electrode pad (G2), and a second source electrode pad (S2). The first source electrode pad (S1) is electrically connected to the plurality of first source electrode comb teeth portions (711). The first gate electrode pad (G1) is electrically connected to the plurality of first gate electrode comb teeth portions (811). The second gate electrode pad (G2) is electrically connected to the plurality of second gate electrode comb teeth portions (821). The second source electrode pad (S2) is electrically connected to the plurality of second source electrode comb teeth portions (721). Each of the plurality of bidirectional switches (1C; 1D) has a first side (11) and a second side (12) that are parallel to each other in a plan view and a third side (13) and a fourth side (14) that are parallel to each other in a plan view. The first source electrode pad (S1) is arranged along the first side (11). The second source electrode pad (S2) is arranged along the second side (12). The first gate electrode pad (G1) is arranged along the third side (13). The second gate electrode pad (G2) is arranged along the fourth side (14). The distance between the first gate electrode pad (G1) and the first source electrode pad (S1) is shorter than the distance between the first gate electrode pad (G1) and the second source electrode pad (S2). The distance between the second gate electrode pad (G2) and the second source electrode pad (S2) is shorter than the distance between the second gate electrode pad (G2) and the first source electrode pad (S1).

[0209] In the bidirectional switch module (100E) according to the eighth aspect, the wiring portions (i.e., the first gate wiring portion GG1 and the second gate wiring portion GG2) on the mounting plate (200B) are used to connect a plurality of bidirectional switches (1C; 1D) in parallel, so that the formed first gate line (WG1) and second gate line (WG2) can have substantially equal lengths and the lengths of both can be shortened.

[0210] The bidirectional switch module (100F) according to the ninth aspect can be implemented in combination with any one of the first aspect to the fifth aspect. In each of the plurality of bidirectional switches (1E), the first source electrode (71) includes a plurality of first source electrode comb teeth portions (711). The first gate electrode (81) includes a plurality of first gate electrode comb teeth portions (811). The second gate electrode (82) includes a plurality of second gate electrode comb teeth portions (821). The second source electrode (72) includes a plurality of second source electrode comb teeth portions (721). The plurality of first source electrode comb teeth portions (711) and the plurality of second source electrode comb teeth portions (721) are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions (711) and second source electrode comb teeth portions (721), one first gate electrode comb tooth portion (811) among the plurality of first gate electrode comb teeth portions (811) and one second gate electrode comb tooth portion (821) among the plurality of second gate electrode comb teeth portions (821) are arranged side by side in this order from the first source electrode comb tooth portion (711) toward the second source electrode comb tooth portion (721). Each of the plurality of bidirectional switches (1E) includes a first source electrode pad (S1), two first gate electrode pads (G1), two second gate electrode pads (G2), and a second source electrode pad (S2). The first source electrode pad (S1) is electrically connected to the plurality of first source electrode comb teeth portions (711). The two first gate electrode pads are electrically connected to the plurality of first gate electrode comb teeth portions (811). The two second gate electrode pads (G2) are electrically connected to the plurality of second gate electrode comb teeth portions (821). The second source electrode pad (S2) is electrically connected to the plurality of second source electrode comb teeth portions (721). Each of the plurality of bidirectional switches (1E) has a first side (11) and a second side (12) that are parallel to each other in a plan view, and a third side (13) and a fourth side (14) that are parallel to each other in a plan view. The first source electrode pad (S1) is arranged along the first side (11). The second source electrode pad (S2) is arranged along the second side (12). One of the two first gate electrode pads (G1) and one of the two second gate electrode pads (G2) are arranged along the third side (13). Between the first source electrode pad (S1) and the second source electrode pad (S2), the one first gate electrode pad (G1) is closer to the first source electrode pad (S1) than to the second source electrode pad (S2), and the one second gate electrode pad (G2) is closer to the second source electrode pad (S2) than to the first source electrode pad (S1). The other first gate electrode pad (G1) among the two first gate electrode pads (G1) and the other second gate electrode pad (G2) among the two second gate electrode pads (G2) are arranged along the fourth side (14).Between the first source electrode pad (S1) and the second source electrode pad (S2), the other first gate electrode pad (G1) is closer to the first source electrode pad (S1) than to the second source electrode pad (S2), and the other second gate electrode pad (G2) is closer to the second source electrode pad (S2) than to the first source electrode pad (S1).

[0211] The bidirectional switch module (100F) according to the ninth aspect enables chips having the same structure to be used as a plurality of bidirectional switches (1E).

[0212] In the bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the tenth aspect, which can be implemented in combination with any one of the sixth to ninth aspects, each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) has a rectangular shape in a plan view.

[0213] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the tenth aspect enables a larger amount of current to flow through itself while reducing the on-state resistance of each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G).

[0214] In the bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the eleventh aspect that can be implemented in combination with any one of the sixth aspect to the tenth aspect, the mounting plate (200; 200A; 200C; 200D; 200G) includes: an insulating substrate (201); and a first source wiring portion (SS1), a first gate wiring portion (GG1), a second gate wiring portion (GG2), and a second source wiring portion (SS2). The first source wiring portion (SS1), the first gate wiring portion (GG1), the second gate wiring portion (GG2), and the second source wiring portion (SS2) are arranged on the insulating substrate (201). The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) further includes a first source line (WS1), a first gate line (WG1), a second gate line (WG2), and a second source line (WS2) for each of the plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G). The first source line (WS1) electrically connects the first source electrode (71) of the bidirectional switch (1; 1A; 1B; 1C; 1D; 1E; 1G) to the first source wiring portion (SS1). The first gate line (WG1) electrically connects the first gate electrode (81) of the bidirectional switch (1; 1A; 1B; 1C; 1D; 1E; 1G) to the first gate wiring portion (GG1). The second gate line (WG2) electrically connects the second gate electrode (82) of the bidirectional switch (1; 1A; 1B; 1C; 1D; 1E; 1G) to the second gate wiring portion (GG2). The second source line (WS2) electrically connects the second source electrode (72) of the bidirectional switch (1; 1A; 1B; 1C; 1D; 1E; 1G) to the second source wiring portion (SS2).

[0215] The bidirectional switch module (100; 100A; 100B; 100C; 100D; 100E; 100F; 100G) according to the eleventh aspect enables a plurality of bidirectional switches (1; 1A; 1B; 1C; 1D; 1E; 1G) to be electrically connected in parallel.

[0216] The bidirectional switch module (100) according to the twelfth aspect can be implemented in combination with the eleventh aspect. On the mounting plate (200), the first source wiring portion (SS1), the first gate wiring portion (GG1), the second gate wiring portion (GG2), and the second source wiring portion (SS2) are arranged side by side in this order in a plan view. A plurality of bidirectional switches (1) are provided between the first gate wiring portion (GG1) and the second gate wiring portion (GG2) and do not contact the first gate wiring portion (GG1) and the second gate wiring portion (GG2).

[0217] The bidirectional switch module (100) according to the twelfth aspect enables the lengths of the first gate line (WG1) and the second gate line (WG2) to be shortened and enables the two to have substantially the same length.

[0218] The bidirectional switch module (100B) according to the thirteenth aspect can be implemented in combination with the eleventh aspect. On the mounting board (200), the first gate wiring portion (GG1), the first source wiring portion (SS1), the second source wiring portion (SS2), and the second gate wiring portion (GG2) are arranged side by side in this order in a plan view. A plurality of bidirectional switches (1) are provided between the first source wiring portion (SS1) and the second source wiring portion (SS2) and do not contact the first source wiring portion (SS1) and the second source wiring portion (SS2).

[0219] The bidirectional switch module (100B) according to the thirteenth aspect enables the first source line (WS1) and the second source line (WS2) to have shorter lengths.

[0220] The bidirectional switch module (100C) according to the fourteenth aspect can be implemented in combination with the eleventh aspect. On the mounting board (200C), the first gate wiring portion (GG1), the second gate wiring portion (GG2), the first source wiring portion (SS1), and the second source wiring portion (SS2) are arranged side by side in this order in a plan view. A plurality of bidirectional switches (1) are provided between the first source wiring portion (SS1) and the second source wiring portion (SS2) and do not contact the first source wiring portion (SS1) and the second source wiring portion (SS2).

[0221] The bidirectional switch module (100C) according to the fourteenth aspect enables the first source line (WS1) and the second source line (WS2) to have shorter lengths.

[0222] In the bidirectional switch module (100; 100A) according to the fifteenth aspect that can be implemented in combination with the twelfth aspect, the mounting plate (200) further includes a plurality of first gate wiring extensions (GG11) and a plurality of second gate wiring extensions (GG21). The first gate wiring extensions (GG11) extend from the first gate wiring portion (GG1) toward the second gate wiring portion (GG2). The plurality of second gate wiring extensions (GG21) extend from the second gate wiring portion (GG2) toward the first gate wiring portion (GG1). The plurality of first gate wiring extensions (GG11) are associated with the plurality of bidirectional switches (1) in a one-to-one manner. Each first gate wiring extension among the plurality of first gate wiring extensions (GG11) is adjacent to the associated bidirectional switch among the plurality of bidirectional switches (1). The plurality of second gate wiring extensions (GG21) are associated with the plurality of bidirectional switches (1) in a one-to-one manner. Each second gate wiring extension among the plurality of second gate wiring extensions (GG21) is adjacent to the associated bidirectional switch among the plurality of bidirectional switches (1). On the mounting plate (200), the plurality of first gate wiring extensions (GG11) and the plurality of second gate wiring extensions (GG21) correspond to each other in a one-to-one manner, and each first gate wiring extension among the first gate wiring extensions (GG11) and the corresponding second gate wiring extension among the second gate wiring extensions (GG21) are arranged such that their respective front ends face each other.

[0223] In the bidirectional switch module (100; 100A) according to the fifteenth aspect, the first gate electrode pad (G1) of the bidirectional switch (1) is electrically connected to the first gate wiring extension (GG11) on the mounting plate (200) via the first gate line (WG1), which enables the first gate electrode (81) and the first gate wiring portion (GG1) to be electrically connected together, thereby enabling the length of the first gate line (WG1) to be shortened. Additionally, in the bidirectional switch module (100; 100A) according to the fifteenth aspect, the second gate electrode pad (G2) of the bidirectional switch (1) is electrically connected to the second gate wiring extension (GG21) on the mounting plate (200) via the second gate line (WG2), which enables the second gate electrode (82) and the second gate wiring portion (GG2) to be electrically connected together, thereby enabling the length of the second gate line (WG2) to be shortened.

[0224] In the bidirectional switch module (100B) according to the sixteenth aspect, which can be implemented in combination with the thirteenth aspect, the mounting plate (200B) further includes a plurality of first source wiring extension portions (SS11) and a plurality of second source wiring extension portions (SS21). The plurality of first source wiring extension portions (SS11) extend from the first source wiring portion (SS1) toward the second source wiring portion (SS2). The plurality of second source wiring extension portions (SS21) extend from the second source wiring portion (SS2) toward the first source wiring portion (SS1). The plurality of first source wiring extension portions (SS11) and the plurality of second source wiring extension portions (SS21) are alternately arranged one by one. One of the plurality of bidirectional switches (1; 1A; 1C; 1D; 1E) is disposed between one first source wiring extension portion (SS11) and one second source wiring extension portion (SS21) of each pair, and the one first source wiring extension portion (SS11) and the one second source wiring extension portion (SS21) are adjacent to each other and respectively belong to the plurality of first source wiring extension portions (SS11) and the plurality of second source wiring extension portions (SS21).

[0225] The bidirectional switch module (100B) according to the sixteenth aspect enables the first source electrode pad (S1) of the bidirectional switch (1; 1A; 1C; 1D; 1E) to be electrically connected to the first source wiring extension portion (SS11) on the mounting plate (200B) via the first source line (WS1), and also enables a larger amount of current to flow through itself by increasing the number of the first source lines (WS1). In addition, the bidirectional switch modules (100B; 100E; 100F) according to the sixteenth aspect also enable the second source electrode pad (S2) of the bidirectional switch (1; 1A; 1C; 1D; 1E) to be electrically connected to the second source wiring extension portion (SS21) on the mounting plate (200B) via the second source line (WS2), and also enable a larger amount of current to flow through itself by increasing the number of the second source lines (WS2).

[0226] The bidirectional switch (1C; 1D) according to the seventeenth aspect includes a first source electrode (71), a first gate electrode (81), a second gate electrode (82), and a second source electrode (72). The first source electrode (71) includes a plurality of first source electrode comb teeth portions (711). The first gate electrode (81) includes a plurality of first gate electrode comb teeth portions (811). The second gate electrode (82) includes a plurality of second gate electrode comb teeth portions (821). The second source electrode (72) includes a plurality of second source electrode comb teeth portions (721). The plurality of first source electrode comb teeth portions (711) and the plurality of second source electrode comb teeth portions (721) are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions (711) and second source electrode comb teeth portions (721), one first gate electrode comb teeth portion (811) among the plurality of first gate electrode comb teeth portions (811) and one second gate electrode comb teeth portion (821) among the plurality of second gate electrode comb teeth portions (821) are arranged side by side in this order from the first source electrode comb teeth portion (711) toward the second source electrode comb teeth portion (721). The bidirectional switch (1C; 1D) further includes a first source electrode pad (S1), a first gate electrode pad (G1), a second gate electrode pad (G2), and a second source electrode pad (S2). The first source electrode pad (S1) is electrically connected to the plurality of first source electrode comb teeth portions (711). The first gate electrode pad (G1) is electrically connected to the plurality of first gate electrode comb teeth portions (811). The second gate electrode pad (G2) is electrically connected to the plurality of second gate electrode comb teeth portions (821). The second source electrode pad (S2) is electrically connected to the plurality of second source electrode comb teeth portions (721). The bidirectional switch (1C; 1D) has a first side (11) and a second side (12) that are parallel to each other in a plan view and a third side (13) and a fourth side (14) that are parallel to each other in a plan view. The first source electrode pad (S1) is arranged along the first side (11). The second source electrode pad (S2) is arranged along the second side (12). The first gate electrode pad (G1) is arranged along the third side (13). The second gate electrode pad (G2) is arranged along the fourth side (14). The distance between the first gate electrode pad (G1) and the first source electrode pad (S1) is shorter than the distance between the first gate electrode pad (G1) and the second source electrode pad (S2). The distance between the second gate electrode pad (G2) and the second source electrode pad (S2) is shorter than the distance between the second gate electrode pad (G2) and the first source electrode pad (S1).

[0227] The bidirectional switch (1C; 1D) according to the seventeenth aspect is, for example, realized by forming a first gate line (WG1) and a second gate line (WG2) on a mounting board (200B) such that the first gate line (WG1) and the second gate line (WG2) can be formed with substantially the same length. In addition, the bidirectional switch (1C; 1D) according to the seventeenth aspect also connects a plurality of bidirectional switches (1C; 1D) in parallel so that a larger amount of current can flow through itself.

[0228] The bidirectional switch (1E) according to the eighteenth aspect includes a first source electrode (71), a first gate electrode (81), a second gate electrode (82), and a second source electrode (72). The first source electrode (71) includes a plurality of first source electrode comb teeth portions (711). The first gate electrode (81) includes a plurality of first gate electrode comb teeth portions (811). The second gate electrode (82) includes a plurality of second gate electrode comb teeth portions (821). The second source electrode (72) includes a plurality of second source electrode comb teeth portions (721). The plurality of first source electrode comb teeth portions (711) and the plurality of second source electrode comb teeth portions (721) are alternately arranged one by one. Between each pair of adjacent first source electrode comb teeth portions (711) and second source electrode comb teeth portions (721), one first gate electrode comb tooth portion (811) among the plurality of first gate electrode comb teeth portions (811) and one second gate electrode comb tooth portion (821) among the plurality of second gate electrode comb teeth portions (821) are arranged side by side in this order from the first source electrode comb tooth portion (711) toward the second source electrode comb tooth portion (721). The bidirectional switch (1E) further includes a first source electrode pad (S1), two first gate electrode pads (G1), two second gate electrode pads (G2), and a second source electrode pad (S2). The first source electrode pad (S1) is electrically connected to the plurality of first source electrode comb teeth portions (711). The two first gate electrode pads (G1) are electrically connected to the plurality of first gate electrode comb teeth portions (811). The two second gate electrode pads (G2) are electrically connected to the plurality of second gate electrode comb teeth portions (821). The second source electrode pad (S2) is electrically connected to the plurality of second source electrode comb teeth portions (721). The bidirectional switch (1E) has a first side (11) and a second side (12) that are parallel to each other in a plan view, and a third side (13) and a fourth side (14) that are parallel to each other in a plan view. The first source electrode pad (S1) is arranged along the first side (11). The second source electrode pad (S2) is arranged along the second side (12). One of the two first gate electrode pads (G1) and one of the two second gate electrode pads (G2) are arranged along the third side (13). Between the first source electrode pad (S1) and the second source electrode pad (S2), the one first gate electrode pad (G1) is closer to the first source electrode pad (S1) than to the second source electrode pad (S2), and the one second gate electrode pad (G2) is closer to the second source electrode pad (S2) than to the first source electrode pad (S1). The other first gate electrode pad (G1) of the two first gate electrode pads (G1) and the other second gate electrode pad (G2) of the two second gate electrode pads (G2) are arranged along the fourth side (14).Between the first source electrode pad (S1) and the second source electrode pad (S2), the other first gate electrode pad (G1) is closer to the first source electrode pad (S1) than to the second source electrode pad (S2), and the other second gate electrode pad (G2) is closer to the second source electrode pad (S2) than to the first source electrode pad (S1).

[0229] The bidirectional switch (1E) according to the eighteenth aspect enables, for example, the use of the same type of bidirectional switch (1E) as a plurality of bidirectional switches to be mounted on the mounting board (200B). Mounting a plurality of bidirectional switches (1E) on the mounting board (200B) and connecting the plurality of bidirectional switches (1E) in parallel helps to allow a larger amount of current to flow through the bidirectional switch (1E).

[0230] 1, 1A, 1B, 1C, 1D, 1E, 1G bidirectional switch

[0231] 11 First side

[0232] 12 Second side

[0233] 13 Third side

[0234] 14 Fourth side

[0235] 2 Substrate

[0236] 3 Buffer layer

[0237] 4 First nitride semiconductor layer

[0238] 5 Second nitride semiconductor layer

[0239] 61 First p-type layer

[0240] 62 Second p-type layer

[0241] 71 First source electrode

[0242] 711 First source electrode comb teeth portion

[0243] 72 Second source electrode

[0244] 721 Second source electrode comb teeth portion

[0245] 81 First gate electrode

[0246] 811 First gate electrode comb teeth portion

[0247] 82 Second gate electrode

[0248] 821 Second gate electrode comb teeth portion

[0249] 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G Bidirectional Switch Module

[0250] 200, 200A, 200B, 200C, 200D, 200G Mounting Plate

[0251] 201 Insulating Substrate

[0252] 203 Conductor Part

[0253] 202, 204, 205, 206, 207 Die Pad Part

[0254] G1 First Gate Electrode Pad

[0255] G2 Second Gate Electrode Pad

[0256] GG1 First Gate Wiring Part

[0257] GG11 First Gate Wiring Extension Part

[0258] GG2 Second Gate Wiring Part

[0259] GG21 Second Gate Wiring Extension Part

[0260] S1 First Source Electrode Pad

[0261] S2 Second Source Electrode Pad

[0262] SS1 First Source Wiring Part

[0263] SS11 First Source Wiring Extension Part

[0264] SS2 Second Source Wiring Part

[0265] SS21 Second Source Wiring Extension Part

[0266] WG1 First Gate Line

[0267] WG2 Second Gate Line

[0268] WS1 First Source Line

[0269] WS2 Second Source Line

Claims

1. A bidirectional switch module, comprising: a plurality of bidirectional switches, each bidirectional switch of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; and a mounting plate on which the plurality of bidirectional switches are mounted, wherein the plurality of bidirectional switches are connected in parallel, in each bidirectional switch of the plurality of bidirectional switches, the first source electrode includes a plurality of first source electrode comb teeth; the first gate electrode includes a plurality of first gate electrode comb teeth; the second gate electrode includes a plurality of second gate electrode comb teeth; the second source electrode includes a plurality of second source electrode comb teeth, and the plurality of first source electrode comb teeth and the plurality of second source electrode comb teeth are arranged alternately one by one, and between each pair of adjacent first source electrode comb teeth and second source electrode comb teeth, one first gate electrode comb tooth of the plurality of first gate electrode comb teeth and one second gate electrode comb tooth of the plurality of second gate electrode comb teeth are arranged side by side in the order of the first gate electrode comb tooth, the second gate electrode comb tooth from the first source electrode comb tooth toward the second source electrode comb tooth; each bidirectional switch of the plurality of bidirectional switches further includes: a first source electrode pad electrically connected to the plurality of first source electrode comb teeth; a first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth; a second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth; and a second source electrode pad electrically connected to the plurality of second source electrode comb teeth, each bidirectional switch of the plurality of bidirectional switches has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view, the first source electrode pad is arranged along the first side, the second source electrode pad is arranged along the second side, the first gate electrode pad is arranged along the third side, the second gate electrode pad is arranged along the fourth side, the distance between the first gate electrode pad and the first source electrode pad is shorter than the distance between the first gate electrode pad and the second source electrode pad, and the distance between the second gate electrode pad and the second source electrode pad is shorter than the distance between the second gate electrode pad and the first source electrode pad.

2. The bidirectional switch module according to claim 1, wherein each bidirectional switch of the plurality of bidirectional switches is a lateral transistor.

3. The bidirectional switch module according to claim 2, wherein each bidirectional switch of the plurality of bidirectional switches includes: a substrate; a first nitride semiconductor layer formed above the substrate; and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger bandgap than the first nitride semiconductor layer, and in each bidirectional switch of the plurality of bidirectional switches, the first source electrode, the first gate electrode, the second gate electrode, and the second source electrode are formed on or above the second nitride semiconductor layer.

4. The bidirectional switch module according to claim 3, wherein each bidirectional switch of the plurality of bidirectional switches further includes: A first p-type layer, which is interposed between the first gate electrode and the second nitride semiconductor layer; and A second p-type layer, which is interposed between the second gate electrode and the second nitride semiconductor layer.

5. The bidirectional switch module according to claim 4, wherein, in each of the plurality of bidirectional switches, the substrate has conductivity, the substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode, the mounting plate includes a conductor portion to which the substrates of the plurality of bidirectional switches are electrically connected, and the conductor portion includes a plurality of die pad portions associated with the plurality of bidirectional switches in a one-to-one manner, and the associated bidirectional switch of the plurality of bidirectional switches is mounted on each of the plurality of die pad portions.

6. The bidirectional switch module according to any one of claims 1 to 5, wherein, each of the plurality of bidirectional switches has a rectangular shape in a plan view.

7. The bidirectional switch module according to any one of claims 1 to 5, wherein, the mounting plate includes: an insulating substrate; and a first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all of which are disposed on the insulating substrate, and for each of the plurality of bidirectional switches, the bidirectional switch module further includes: a first source line that electrically connects the first source electrode of the bidirectional switch to the first source wiring portion; a first gate line that electrically connects the first gate electrode of the bidirectional switch to the first gate wiring portion; a second gate line that electrically connects the second gate electrode of the bidirectional switch to the second gate wiring portion; and a second source line that electrically connects the second source electrode of the bidirectional switch to the second source wiring portion.

8. The bidirectional switch module according to claim 7, wherein, on the mounting plate, the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion are arranged side by side in the order of the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion in a plan view, and the plurality of bidirectional switches are disposed between the first gate wiring portion and the second gate wiring portion and do not contact the first gate wiring portion and the second gate wiring portion.

9. A bidirectional switch module, comprising: a plurality of bidirectional switches, each of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; and a mounting plate on which the plurality of bidirectional switches are mounted, wherein the plurality of bidirectional switches are connected in parallel, in each of the plurality of bidirectional switches, the first source electrode includes a plurality of first source electrode comb teeth portions, the first gate electrode includes a plurality of first gate electrode comb teeth portions, the second gate electrode includes a plurality of second gate electrode comb teeth portions, the second source electrode includes a plurality of second source electrode comb teeth portions, and The multiple first source electrode comb teeth portions and the multiple second source electrode comb teeth portions are arranged alternately one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb teeth portion among the multiple first gate electrode comb teeth portions and one second gate electrode comb teeth portion among the multiple second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb teeth portion and the second gate electrode comb teeth portion from the first source electrode comb teeth portion toward the second source electrode comb teeth portion. Each of the multiple bidirectional switches further includes: A first source electrode pad electrically connected to the multiple first source electrode comb teeth portions; Two first gate electrode pads electrically connected to the multiple first gate electrode comb teeth portions; Two second gate electrode pads electrically connected to the multiple second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the multiple second source electrode comb teeth portions. Each of the multiple bidirectional switches has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view. The first source electrode pad is arranged along the first side. The second source electrode pad is arranged along the second side. One first gate electrode pad among the two first gate electrode pads and one second gate electrode pad among the two second gate electrode pads are arranged along the third side. Between the first source electrode pad and the second source electrode pad, the one first gate electrode pad is closer to the first source electrode pad than to the second source electrode pad, and the one second gate electrode pad is closer to the second source electrode pad than to the first source electrode pad. The other first gate electrode pad among the two first gate electrode pads and the other second gate electrode pad among the two second gate electrode pads are arranged along the fourth side, and between the first source electrode pad and the second source electrode pad, the other first gate electrode pad is closer to the first source electrode pad than to the second source electrode pad, and the other second gate electrode pad is closer to the second source electrode pad than to the first source electrode pad.

10. The bidirectional switch module according to claim 9, wherein, Each of the multiple bidirectional switches is a lateral transistor.

11. The bidirectional switch module according to claim 10, wherein, Each of the multiple bidirectional switches includes: A substrate; A first nitride semiconductor layer formed above the substrate; and A second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger bandgap than the first nitride semiconductor layer, and In each of the multiple bidirectional switches, the first source electrode, the first gate electrode, the second gate electrode, and the second source electrode are formed on or above the second nitride semiconductor layer.

12. The bidirectional switch module according to claim 11, wherein, Each of the multiple bidirectional switches further includes: A first p-type layer interposed between the first gate electrode and the second nitride semiconductor layer; and A second p-type layer, which is interposed between the second gate electrode and the second nitride semiconductor layer.

13. The bidirectional switch module according to claim 12, wherein, in each of the plurality of bidirectional switches, the substrate has conductivity, the substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode, the mounting plate includes a conductor portion to which the substrates of the plurality of bidirectional switches are electrically connected, and the conductor portion includes a plurality of die pad portions associated with the plurality of bidirectional switches in a one-to-one manner, and the associated bidirectional switch of the plurality of bidirectional switches is mounted on each of the plurality of die pad portions.

14. The bidirectional switch module according to any one of claims 9 to 13, wherein, each of the plurality of bidirectional switches has a rectangular shape in a plan view.

15. The bidirectional switch module according to any one of claims 9 to 13, wherein, the mounting plate includes: an insulating substrate; and a first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all of which are disposed on the insulating substrate, and the bidirectional switch module further includes, for each of the plurality of bidirectional switches: a first source line that electrically connects the first source electrode of the bidirectional switch to the first source wiring portion; a first gate line that electrically connects the first gate electrode of the bidirectional switch to the first gate wiring portion; a second gate line that electrically connects the second gate electrode of the bidirectional switch to the second gate wiring portion; and a second source line that electrically connects the second source electrode of the bidirectional switch to the second source wiring portion.

16. The bidirectional switch module according to claim 15, wherein, on the mounting plate, the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion are arranged side by side in the order of the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion in a plan view, and the plurality of bidirectional switches are disposed between the first gate wiring portion and the second gate wiring portion and do not contact the first gate wiring portion and the second gate wiring portion.

17. A bidirectional switch module, comprising: a plurality of bidirectional switches, each of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; and a mounting plate on which the plurality of bidirectional switches are mounted, wherein the plurality of bidirectional switches are connected in parallel, in each of the plurality of bidirectional switches, the first source electrode includes a plurality of first source electrode comb teeth portions, the first gate electrode includes a plurality of first gate electrode comb teeth portions, the second gate electrode includes a plurality of second gate electrode comb teeth portions, the second source electrode includes a plurality of second source electrode comb teeth portions, and ​ The plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are arranged alternately one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion. Each of the plurality of bidirectional switches further includes: A first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; A first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth portions; A second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions. Each of the plurality of bidirectional switches has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view. The first source electrode pad is arranged along the first side. The second source electrode pad is arranged along the second side. The first gate electrode pad and the second gate electrode pad are arranged along the third side. And In a direction aligned with the third side, the first source electrode pad, the first gate electrode pad, the second gate electrode pad, and the second source electrode pad are arranged side by side in the order of the first source electrode pad, the first gate electrode pad, the second gate electrode pad, and the second source electrode pad. The mounting plate includes: An insulating substrate; and A first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all arranged on the insulating substrate. And The bidirectional switch module further includes, for each of the plurality of bidirectional switches: A first source line electrically connecting the first source electrode of the bidirectional switch to the first source wiring portion; A first gate line electrically connecting the first gate electrode of the bidirectional switch to the first gate wiring portion; A second gate line electrically connecting the second gate electrode of the bidirectional switch to the second gate wiring portion; and A second source line electrically connecting the second source electrode of the bidirectional switch to the second source wiring portion. On the mounting plate, The first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion are arranged side by side in the order of the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion in a plan view. And The plurality of bidirectional switches are arranged between the first gate wiring portion and the second gate wiring portion and do not contact the first gate wiring portion and the second gate wiring portion.

18. The bidirectional switch module according to claim 17, wherein, The mounting plate further includes: A plurality of first gate wiring extension portions extending from the first gate wiring portion toward the second gate wiring portion; and A plurality of second gate wiring extension portions extending from the second gate wiring portion toward the first gate wiring portion, The plurality of first gate wiring extension portions are associated with the plurality of bidirectional switches in a one-to-one manner, and each first gate wiring extension portion among the plurality of first gate wiring extension portions is adjacent to the associated bidirectional switch among the plurality of bidirectional switches, The plurality of second gate wiring extension portions are associated with the plurality of bidirectional switches in a one-to-one manner, and each second gate wiring extension portion among the plurality of second gate wiring extension portions is adjacent to the associated bidirectional switch among the plurality of bidirectional switches, and On the mounting board, The plurality of first gate wiring extension portions and the plurality of second gate wiring extension portions correspond to each other in a one-to-one manner, and each first gate wiring extension portion among the first gate wiring extension portions and the corresponding second gate wiring extension portion among the second gate wiring extension portions are arranged such that their respective front ends face each other.

19. A bidirectional switch module, Comprising: A plurality of bidirectional switches, each bidirectional switch among the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; And A mounting board on which the plurality of bidirectional switches are mounted, Wherein, the plurality of bidirectional switches are connected in parallel, In each bidirectional switch among the plurality of bidirectional switches, The first source electrode includes a plurality of first source electrode comb teeth portions, The first gate electrode includes a plurality of first gate electrode comb teeth portions, The second gate electrode includes a plurality of second gate electrode comb teeth portions, The second source electrode includes a plurality of second source electrode comb teeth portions, and The plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are alternately arranged one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion, Each bidirectional switch among the plurality of bidirectional switches further includes: A first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; A first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth portions; A second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions, Each bidirectional switch among the plurality of bidirectional switches has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in a plan view, The first source electrode pad and the first gate electrode pad are arranged along the first side, In the direction aligned with the first side, the first source electrode pad is longer than the first gate electrode pad, The second source electrode pad and the second gate electrode pad are arranged along the second side, and In the direction aligned with the second side, the second source electrode pad is longer than the second gate electrode pad, The mounting board includes: An insulating substrate; and A first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all of which are disposed on the insulating substrate, and the bidirectional switch module further includes, for each of the plurality of bidirectional switches: a first source line that electrically connects the first source electrode of the bidirectional switch to the first source wiring portion; a first gate line that electrically connects the first gate electrode of the bidirectional switch to the first gate wiring portion; a second gate line that electrically connects the second gate electrode of the bidirectional switch to the second gate wiring portion; and a second source line that electrically connects the second source electrode of the bidirectional switch to the second source wiring portion, on the mounting plate, the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion are arranged side by side in the order of the first source wiring portion, the first gate wiring portion, the second gate wiring portion, and the second source wiring portion in a plan view, and the plurality of bidirectional switches are disposed between the first gate wiring portion and the second gate wiring portion and do not contact the first gate wiring portion and the second gate wiring portion.

20. The bidirectional switch module according to claim 19, wherein, the mounting plate further includes: a plurality of first gate wiring extension portions that extend from the first gate wiring portion toward the second gate wiring portion; and a plurality of second gate wiring extension portions that extend from the second gate wiring portion toward the first gate wiring portion, the plurality of first gate wiring extension portions are associated with the plurality of bidirectional switches in a one-to-one manner, and each of the plurality of first gate wiring extension portions is adjacent to the associated bidirectional switch among the plurality of bidirectional switches, the plurality of second gate wiring extension portions are associated with the plurality of bidirectional switches in a one-to-one manner, and each of the plurality of second gate wiring extension portions is adjacent to the associated bidirectional switch among the plurality of bidirectional switches, and on the mounting plate, the plurality of first gate wiring extension portions and the plurality of second gate wiring extension portions correspond to each other in a one-to-one manner, and each of the first gate wiring extension portions and the corresponding second gate wiring extension portion among the second gate wiring extension portions are arranged such that their respective front ends face each other.

21. A bidirectional switch module, comprising: a plurality of bidirectional switches, each of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; and a mounting plate on which the plurality of bidirectional switches are mounted, wherein the plurality of bidirectional switches are connected in parallel, in each of the plurality of bidirectional switches, the first source electrode includes a plurality of first source electrode comb teeth portions, the first gate electrode includes a plurality of first gate electrode comb teeth portions, the second gate electrode includes a plurality of second gate electrode comb teeth portions, the second source electrode includes a plurality of second source electrode comb teeth portions, and The multiple first source electrode comb teeth portions and the multiple second source electrode comb teeth portions are arranged alternately one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb teeth portion among the multiple first gate electrode comb teeth portions and one second gate electrode comb teeth portion among the multiple second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb teeth portion and the second gate electrode comb teeth portion from the first source electrode comb teeth portion toward the second source electrode comb teeth portion. Each of the multiple bidirectional switches further includes: A first source electrode pad electrically connected to the multiple first source electrode comb teeth portions; A first gate electrode pad electrically connected to the multiple first gate electrode comb teeth portions; A second gate electrode pad electrically connected to the multiple second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the multiple second source electrode comb teeth portions. Each of the multiple bidirectional switches has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view. The first source electrode pad is arranged along the first side. The second source electrode pad is arranged along the second side. The first gate electrode pad and the second gate electrode pad are arranged along the third side. And In a direction aligned with the third side, the first source electrode pad, the first gate electrode pad, the second gate electrode pad, and the second source electrode pad are arranged side by side in the order of the first source electrode pad, the first gate electrode pad, the second gate electrode pad, and the second source electrode pad. The mounting plate includes: An insulating substrate; and A first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all of which are arranged on the insulating substrate. And The bidirectional switch module further includes, for each of the multiple bidirectional switches: A first source line electrically connecting the first source electrode of the bidirectional switch to the first source wiring portion; A first gate line electrically connecting the first gate electrode of the bidirectional switch to the first gate wiring portion; A second gate line electrically connecting the second gate electrode of the bidirectional switch to the second gate wiring portion; and A second source line electrically connecting the second source electrode of the bidirectional switch to the second source wiring portion. On the mounting plate, The first gate wiring portion, the first source wiring portion, the second source wiring portion, and the second gate wiring portion are arranged side by side in the order of the first gate wiring portion, the first source wiring portion, the second source wiring portion, and the second gate wiring portion in a plan view. And The multiple bidirectional switches are arranged between the first source wiring portion and the second source wiring portion and do not contact the first source wiring portion and the second source wiring portion.

22. The bidirectional switch module according to claim 21, wherein, The mounting plate further includes: Multiple first source wiring extension portions extending from the first source wiring portion toward the second source wiring portion; and A plurality of second source wiring extension portions extending from the second source wiring portion toward the first source wiring portion, the plurality of first source wiring extension portions and the plurality of second source wiring extension portions being alternately arranged one by one, and one of the plurality of bidirectional switches being disposed between one first source wiring extension portion and one second source wiring extension portion that are adjacent to each other and respectively belong to the plurality of first source wiring extension portions and the plurality of second source wiring extension portions.

23. A bidirectional switch module, comprising: a plurality of bidirectional switches, each of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; and a mounting board on which the plurality of bidirectional switches are mounted, wherein the plurality of bidirectional switches are connected in parallel, in each of the plurality of bidirectional switches, the first source electrode includes a plurality of first source electrode comb teeth portions, the first gate electrode includes a plurality of first gate electrode comb teeth portions, the second gate electrode includes a plurality of second gate electrode comb teeth portions, the second source electrode includes a plurality of second source electrode comb teeth portions, and the plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are alternately arranged one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion, each of the plurality of bidirectional switches further includes: a first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; a first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth portions; a second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth portions; and a second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions, each of the plurality of bidirectional switches has a first side and a second side that are parallel to each other in a plan view and a third side and a fourth side that are parallel to each other in a plan view, the first source electrode pad and the first gate electrode pad are arranged along the first side, in a direction aligned with the first side, the first source electrode pad is longer than the first gate electrode pad, the second source electrode pad and the second gate electrode pad are arranged along the second side, and in a direction aligned with the second side, the second source electrode pad is longer than the second gate electrode pad, the mounting board includes: an insulating substrate; and a first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all of which are arranged on the insulating substrate, and for each of the plurality of bidirectional switches, the bidirectional switch module further includes: a first source line electrically connecting the first source electrode of the bidirectional switch to the first source wiring portion; a first gate line electrically connecting the first gate electrode of the bidirectional switch to the first gate wiring portion; A second gate line that electrically connects the second gate electrode of the bidirectional switch to the second gate wiring portion; and A second source line that electrically connects the second source electrode of the bidirectional switch to the second source wiring portion, On the mounting board, The first gate wiring portion, the first source wiring portion, the second source wiring portion, and the second gate wiring portion are arranged side by side in the order of the first gate wiring portion, the first source wiring portion, the second source wiring portion, and the second gate wiring portion in a plan view, and The plurality of bidirectional switches are disposed between the first source wiring portion and the second source wiring portion and do not contact the first source wiring portion and the second source wiring portion.

24. The bidirectional switch module according to claim 23, Wherein, The mounting board further includes: A plurality of first source wiring extension portions extending from the first source wiring portion toward the second source wiring portion; and A plurality of second source wiring extension portions extending from the second source wiring portion toward the first source wiring portion, The plurality of first source wiring extension portions and the plurality of second source wiring extension portions are alternately arranged one by one, and One of the plurality of bidirectional switches is disposed between one first source wiring extension portion and one second source wiring extension portion that are adjacent to each other and respectively belong to the plurality of first source wiring extension portions and the plurality of second source wiring extension portions.

25. A bidirectional switch module, Comprising: A plurality of bidirectional switches, each of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; And A mounting board on which the plurality of bidirectional switches are mounted, Wherein, the plurality of bidirectional switches are connected in parallel, In each of the plurality of bidirectional switches, The first source electrode includes a plurality of first source electrode comb teeth portions, The first gate electrode includes a plurality of first gate electrode comb teeth portions, The second gate electrode includes a plurality of second gate electrode comb teeth portions, The second source electrode includes a plurality of second source electrode comb teeth portions, and The plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are alternately arranged one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion, Each of the plurality of bidirectional switches further includes: A first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; A first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth portions; A second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions, Each of the plurality of bidirectional switches has a first side and a second side that are parallel to each other in a planar view, and a third side and a fourth side that are parallel to each other in a planar view. The first source electrode pad is arranged along the first side. The second source electrode pad is arranged along the second side. The first gate electrode pad and the second gate electrode pad are arranged along the third side, and in a direction aligned with the third side, the first source electrode pad, the first gate electrode pad, the second gate electrode pad, and the second source electrode pad are arranged side by side in the order of the first source electrode pad, the first gate electrode pad, the second gate electrode pad, and the second source electrode pad. The mounting plate includes: an insulating substrate; and a first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all of which are arranged on the insulating substrate, and For each of the plurality of bidirectional switches, the bidirectional switch module further includes: a first source line that electrically connects the first source electrode of the bidirectional switch to the first source wiring portion; a first gate line that electrically connects the first gate electrode of the bidirectional switch to the first gate wiring portion; a second gate line that electrically connects the second gate electrode of the bidirectional switch to the second gate wiring portion; and a second source line that electrically connects the second source electrode of the bidirectional switch to the second source wiring portion. On the mounting plate, the first gate wiring portion, the second gate wiring portion, the first source wiring portion, and the second source wiring portion are arranged side by side in the order of the first gate wiring portion, the second gate wiring portion, the first source wiring portion, and the second source wiring portion in a planar view, and the plurality of bidirectional switches are arranged between the first source wiring portion and the second source wiring portion and do not contact the first source wiring portion and the second source wiring portion.

26. A bidirectional switch module, comprising: a plurality of bidirectional switches, each of the plurality of bidirectional switches including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode; and a mounting plate on which the plurality of bidirectional switches are mounted, wherein the plurality of bidirectional switches are connected in parallel, In each of the plurality of bidirectional switches, the first source electrode includes a plurality of first source electrode comb teeth portions, the first gate electrode includes a plurality of first gate electrode comb teeth portions, the second gate electrode includes a plurality of second gate electrode comb teeth portions, the second source electrode includes a plurality of second source electrode comb teeth portions, and the plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are arranged alternately one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion. Each of the plurality of bidirectional switches further includes: A first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; A first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth portions; A second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions, Each of the plurality of bidirectional switches has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view, The first source electrode pad and the first gate electrode pad are arranged along the first side, and in a direction aligned with the first side, the first source electrode pad is longer than the first gate electrode pad, The second source electrode pad and the second gate electrode pad are arranged along the second side, and In a direction aligned with the second side, the second source electrode pad is longer than the second gate electrode pad, The mounting plate includes: An insulating substrate; and A first source wiring portion, a first gate wiring portion, a second gate wiring portion, and a second source wiring portion, all arranged on the insulating substrate, The bidirectional switch module further includes, for each of the plurality of bidirectional switches: A first source line electrically connecting the first source electrode of the bidirectional switch to the first source wiring portion; A first gate line electrically connecting the first gate electrode of the bidirectional switch to the first gate wiring portion; A second gate line electrically connecting the second gate electrode of the bidirectional switch to the second gate wiring portion; and A second source line electrically connecting the second source electrode of the bidirectional switch to the second source wiring portion, On the mounting plate, The first gate wiring portion, the second gate wiring portion, the first source wiring portion, and the second source wiring portion are arranged side by side in the order of the first gate wiring portion, the second gate wiring portion, the first source wiring portion, and the second source wiring portion in a plan view, and The plurality of bidirectional switches are provided between the first source wiring portion and the second source wiring portion and do not contact the first source wiring portion and the second source wiring portion.

27. A bidirectional switch including a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode, The first source electrode includes a plurality of first source electrode comb teeth portions, The first gate electrode includes a plurality of first gate electrode comb teeth portions, The second gate electrode includes a plurality of second gate electrode comb teeth portions, The second source electrode includes a plurality of second source electrode comb teeth portions, The plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are alternately arranged one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion, The bidirectional switch further includes: A first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; A first gate electrode pad electrically connected to the plurality of first gate electrode comb teeth portions; A second gate electrode pad electrically connected to the plurality of second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions, The bidirectional switch has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view, The first source electrode pad is arranged along the first side, The second source electrode pad is arranged along the second side, The first gate electrode pad is arranged along the third side, The second gate electrode pad is arranged along the fourth side, The distance between the first gate electrode pad and the first source electrode pad is shorter than the distance between the first gate electrode pad and the second source electrode pad, and The distance between the second gate electrode pad and the second source electrode pad is shorter than the distance between the second gate electrode pad and the first source electrode pad.

28. A bidirectional switch comprising a first source electrode, a first gate electrode, a second gate electrode and a second source electrode, The first source electrode includes a plurality of first source electrode comb teeth portions, The first gate electrode includes a plurality of first gate electrode comb teeth portions, The second gate electrode includes a plurality of second gate electrode comb teeth portions, The second source electrode includes a plurality of second source electrode comb teeth portions, The plurality of first source electrode comb teeth portions and the plurality of second source electrode comb teeth portions are arranged alternately one by one, and between each pair of adjacent first source electrode comb teeth portions and second source electrode comb teeth portions, one first gate electrode comb tooth portion among the plurality of first gate electrode comb teeth portions and one second gate electrode comb tooth portion among the plurality of second gate electrode comb teeth portions are arranged side by side in the order of the first gate electrode comb tooth portion and the second gate electrode comb tooth portion from the first source electrode comb tooth portion toward the second source electrode comb tooth portion, The bidirectional switch further includes: A first source electrode pad electrically connected to the plurality of first source electrode comb teeth portions; Two first gate electrode pads electrically connected to the plurality of first gate electrode comb teeth portions; Two second gate electrode pads electrically connected to the plurality of second gate electrode comb teeth portions; and A second source electrode pad electrically connected to the plurality of second source electrode comb teeth portions, The bidirectional switch has a first side and a second side parallel to each other in a plan view and a third side and a fourth side parallel to each other in the plan view, The first source electrode pad is arranged along the first side, The second source electrode pad is arranged along the second side, One of the two first gate electrode pads and one of the two second gate electrode pads are arranged along the third side, Between the first source electrode pad and the second source electrode pad, one first gate electrode pad is closer to the first source electrode pad than to the second source electrode pad, and one second gate electrode pad is closer to the second source electrode pad than to the first source electrode pad. The other first gate electrode pad among the two first gate electrode pads and the other second gate electrode pad among the two second gate electrode pads are arranged along the fourth side, and Between the first source electrode pad and the second source electrode pad, the other first gate electrode pad is closer to the first source electrode pad than to the second source electrode pad, and the other second gate electrode pad is closer to the second source electrode pad than to the first source electrode pad.

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