Laser debonding method

Abstract

The present invention provides a laser debonding method, which is used to debond a part to be debonded, wherein the part to be debonded includes a first layer structure and a second layer structure bonded by a bonding layer. The laser debonding method first calculates the intrinsic absorption long-wave limit of the laser beam according to the bandgap width of the bonding layer material; then, according to the intrinsic absorption long-wave limit of the laser beam, the wavelength of the final laser beam can be determined, so that the appropriate laser wavelength can be quickly determined, the difficulty of determining the laser wavelength can be simplified, the workload can be reduced, and the cost can be reduced. When the bonding layer is scanned with a laser beam of the wavelength finally determined, the light absorption efficiency of the bonding layer can be guaranteed to be in a relatively large range, and then the bonding layer can be heated to a state where a phase change occurs in a relatively short time, so that the bonding layer can be quickly released from the bonding with the first layer structure and the second layer structure, which is convenient for rapid debonding and improves the debonding efficiency.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a laser debonding method. Background Art

[0002] In the chip manufacturing process, etching, deposition, polishing and other methods are usually used to process a large number of microelectronic devices on the wafer. The wafer is a thin slice cut from a single crystal silicon ingot, and its thickness is usually between 0.3mm and 0.9mm, which shows that the thickness is very thin. Due to the relatively thin thickness of the wafer, and when processing various circuits on the wafer, multiple etching, polishing, cleaning, etc. are required. Usually, the wafer is temporarily bonded to the substrate before processing. Then, deposition, etching and other processes are performed on the surface of the wafer to manufacture various microelectronic devices on the surface of the wafer. After the wafer processing is completed, the wafer and the substrate need to be debonded to separate the wafer and the substrate before the subsequent wafer slicing process can be carried out.

[0003] In the prior art, laser debonding is usually used in the process of debonding the wafer and the substrate. Specifically, the laser beam is focused on the bonding layer between the wafer and the substrate, and scanned on the bonding layer to heat the bonding layer so that the bonding layer is in a molten state. After scanning the entire bonding layer, the laser heating is stopped, and a transfer device with a suction cup is used to peel the wafer and the substrate. When determining the wavelength of the laser, the prior art usually uses a method of experimenting with each laser wavelength to find a suitable laser wavelength. However, this method requires a large number of experiments to determine the wavelength of the laser, which is relatively cumbersome, and at the same time increases the workload and cost. Summary of the invention

[0004] The invention provides a laser debonding method, so as to quickly determine a suitable laser wavelength, simplify the difficulty of determining the laser wavelength, reduce the workload and lower the cost.

[0005] The present invention provides a laser debonding method, which is used to debond a part to be debonded, wherein the part to be debonded includes a first layer structure and a second layer structure bonded by a bonding layer. The laser debonding method includes:

[0006] The to-be-debonded member is held on a stage, wherein the first layer structure is in contact with the stage;

[0007] providing a laser system for generating a laser beam;

[0008] According to the bandgap width E of the bonding layer material g0 , the intrinsic absorption long-wave limit of the laser beam is calculated according to the following formula:

[0009]

[0010] According to the intrinsic absorption long-wave limit of the laser beam, the wavelength of the laser beam is determined to be λ0, where λ0≤λc;

[0011] Controlling the laser beam to focus on the bonding layer after passing through the second layer structure;

[0012] The spot of the laser beam is controlled to scan the bonding layer, so that the bonding layer is heated to undergo a phase change, thereby releasing the bonding between the bonding layer and the first layer structure and the second layer structure.

[0013] In the above scheme, the intrinsic absorption long-wave limit of the laser beam is first calculated according to the bandgap width of the bonding layer material; then, the wavelength of the final laser beam can be determined according to the intrinsic absorption long-wave limit of the laser beam, so that the appropriate laser wavelength can be quickly determined, simplifying the difficulty of determining the laser wavelength, reducing the workload and reducing the cost. When the bonding layer is scanned with the laser beam of the wavelength finally determined, the light absorption efficiency of the bonding layer can be guaranteed to be in a relatively large range, and then the bonding layer can be heated to a state where a phase change occurs in a relatively short time, so as to quickly release the bonding layer from the first layer structure and the second layer structure, facilitate rapid debonding, and improve debonding efficiency.

[0014] In a specific embodiment, the bandgap width of the second layer structure is E g1 , where E g1 >E g0 . This allows the laser beam to more easily penetrate the second layer structure and heat the bonding layer.

[0015] In a specific embodiment, the wavelength of the laser beam is The laser beam passing through the second layer structure can have less energy loss, thereby preventing the second layer structure from being overheated and improving the efficiency of heating the bonding layer.

[0016] In a specific embodiment, after controlling the laser beam to pass through the second layer structure and before focusing on the bonding layer, the laser debonding method further includes: providing a suction cup assembly, the suction cup assembly including a suction cup adsorbed on the surface of the second layer structure; and the bandgap width of the suction cup material is E g2 , where E g2 >E g0. Controlling the laser beam to focus on the bonding layer after passing through the second layer structure includes: controlling the laser beam to pass through the suction cup and the second layer structure from top to bottom in sequence and then focusing on the bonding layer. By first adsorbing the suction cup on the surface of the second layer structure, and then the laser beam passes through the suction cup and the second layer structure from top to bottom in sequence and then focuses on the debonding layer, after the laser spot scans the entire or partial area of ​​the debonding layer, there is no need to move and fix the suction cup, and the suction cup can be pulled at the first time to separate the first layer structure and the second layer structure, thereby shortening the interval time between the end of the laser spot scanning and pulling up the second layer structure, preventing the interval time from being too long, which causes the heated bonding layer to solidify and re-bond, thereby reducing the difficulty of peeling.

[0017] In a specific embodiment, the bandgap width E of the suction cup material is g2 Greater than or equal to the bandgap width E of the second layer structural material g1 . To reduce the energy loss of the laser when it passes through the suction cup and the second layer structure.

[0018] In a specific embodiment, the suction cup assembly also includes a stretching mechanism connected to the suction cup. Controlling the spot of the laser beam to scan the bonding layer so that the bonding layer is heated and undergoes a phase change, and releasing the bonding between the bonding layer and the first layer structure and the second layer structure includes: controlling the spot of the laser beam to scan the first area of ​​the bonding layer so that the bonding layer in the first area is heated and undergoes a phase change, and releasing the bonding between the bonding layer in the first area and the first layer structure and the second layer structure; wherein the first area is a partial area of ​​the bonding layer. Afterwards, the stretching mechanism is controlled to pull the suction cup upward so that the first layer structure and the second layer structure are separated at a position overlapping with the first area. The spot of the laser beam is sequentially controlled to scan the second area to the Nth area of ​​the bonding layer, and after scanning an area, the stretching mechanism is controlled to pull the suction cup upward so that the first layer structure and the second layer structure are separated at a position overlapping with an area just scanned. Wherein, the first area to the Nth area constitute the entire area of ​​the bonding layer. After the laser spot scans a partial area of ​​the bonding layer, the second layer structure is subsequently stretched to separate the two layer structures at the overlapping position of the partial area, thereby further shortening the time interval between the spot scanning and the stretching of the second layer structure, thereby more securely avoiding the solidification of the bonding layer in the partial area that has just been heated. The peeling method of laser debonding and separation by pulling the suction cup can more securely prevent the two layer structures from sticking together again due to the cooling and solidification of the molten bonding material, thereby further reducing the difficulty of peeling.

[0019] In a specific embodiment, the first layer structure is a wafer, and the second layer structure is a substrate, so as to reduce the difficulty of peeling the wafer and the substrate during the laser debonding process. At the same time, the laser beam is prevented from passing through the wafer, so as to prevent the laser beam from affecting the electrical properties of the microelectronic devices on the wafer.

[0020] In a specific embodiment, each of the first region to the N-1th region is a circular region, and the Nth region is a circular region. The first region to the Nth region are arranged from the outer circle of the bonding layer to the inner circle in sequence, so that the gaseous or plasma substances generated during the laser debonding process can be dispersed out of the two layer structures.

[0021] In a specific embodiment, the materials of the suction cup and the substrate are both quartz, so as to prevent the suction cup and the substrate from affecting the laser transmittance.

[0022] In a specific embodiment, the laser system further includes a galvanometer system. Controlling the laser beam spot to scan the bonding layer specifically includes: controlling the galvanometer system to make the laser beam spot scan the bonding layer. By using the galvanometer system to control the spot to scan the bonding layer, the scanning difficulty is simplified. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A flow chart of a laser debonding method provided by an embodiment of the present invention;

[0024] Figure 2 A diagram showing the relationship between the transmittance and wavelength of the laser provided in an embodiment of the present invention;

[0025] Figure 3 A schematic diagram of a laser debonding structure provided by an embodiment of the present invention;

[0026] Figure 4 A schematic diagram of another structure of laser debonding provided by an embodiment of the present invention;

[0027] Figure 5 A schematic diagram of the structure of a suction cup and a stretching mechanism provided by an embodiment of the present invention;

[0028] Figure 6 A schematic diagram of a longitudinal section structure of a suction cup provided in an embodiment of the present invention;

[0029] Figure 7 A schematic diagram of the structure of the adsorption channel on the adsorption end surface provided by an embodiment of the present invention;

[0030] Figure 8 A schematic diagram of dividing different areas on a bonding layer provided in an embodiment of the present invention;

[0031] Fig. 9 A schematic structural diagram of another suction cup and stretching mechanism provided by an embodiment of the present invention;

[0032] Fig.10 A schematic diagram of the structure of a pull rod and a suction cup provided in an embodiment of the present invention;

[0033] Fig.11A schematic structural diagram of an adsorption end surface of another suction cup provided in an embodiment of the present invention;

[0034] Fig.12 A schematic diagram of the structure of another adsorption channel on an adsorption end surface provided by an embodiment of the present invention;

[0035] Fig.13 A schematic side view of another suction cup provided by an embodiment of the present invention;

[0036] Fig.14 A schematic structural diagram of another stretching mechanism provided in an embodiment of the present invention.

[0037] Reference numerals:

[0038] 10- stage 11- first layer structure 12- second layer structure 13- bonding layer

[0039] 21-Laser 22-Focusing lens 23-Galvanometer system

[0040] 30-suction cup 31-adsorption end surface 32-adsorption channel 33-connection end surface

[0041] 34-adsorption area 35-vacuum extractor

[0042] 40-stretching mechanism 41-pull rod 42-bracket 43-support arm 44-lifting mechanism DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0044] In order to facilitate understanding of the laser debonding method provided by the embodiment of the present invention, the application scenario of the laser debonding method provided by the embodiment of the present invention is first described below. The laser debonding method is applied to the process of laser debonding a part to be debonded, wherein the part to be debonded includes a first layer structure and a second layer structure bonded by a bonding layer. The laser debonding method is described in detail below in conjunction with the accompanying drawings.

[0045] refer to Figure 1 and Figure 3 , the laser debonding method provided by the embodiment of the present invention includes:

[0046] Step 10: Keep the to-be-debonded component on the stage 10, wherein the first layer structure 11 is in contact with the stage 10;

[0047] Step 20: Setting up a laser system for generating a laser beam;

[0048] Step 30: According to the bandgap width E of the bonding layer 13 material g0 , the intrinsic absorption long-wave limit of the laser beam is calculated according to the following formula:

[0049]

[0050] Step 40: According to the intrinsic absorption long-wave limit of the laser beam, the wavelength of the laser beam is determined to be λ0, where λ0≤λ c ;

[0051] Step 50: Control the laser beam to pass through the second layer structure 12 and focus on the bonding layer 13;

[0052] Step 60: Control the spot of the laser beam to scan the bonding layer 13 so that the bonding layer 13 is heated to undergo a phase change, thereby releasing the bonding between the bonding layer 13 and the first layer structure 11 and the second layer structure 12 .

[0053] By first calculating the intrinsic absorption long-wave limit of the laser beam according to the bandgap width of the bonding layer 13 material; then according to the intrinsic absorption long-wave limit of the laser beam, the wavelength of the final laser beam can be determined, so that the appropriate laser wavelength can be quickly determined, simplifying the difficulty of determining the laser wavelength, reducing the workload, and reducing costs. When the bonding layer 13 is scanned with a laser beam of the wavelength finally determined, it can ensure that the light absorption efficiency of the bonding layer 13 is in a relatively large range, and then the bonding layer 13 can be heated to a state where a phase change occurs in a relatively short time, thereby quickly releasing the bonding layer 13 from the first layer structure 11 and the second layer structure 12, facilitating rapid debonding and improving debonding efficiency. The above steps are described in detail below in conjunction with the accompanying drawings.

[0054] First, refer to Figure 1 and Figure 3 , the to-be-debonded member is held on the stage 10, and the first layer structure 11 is in contact with the stage 10. Figure 3 As shown, the stage 10 is used as a support structure to hold the to-be-debonded part on it. When setting, a table body with a support end surface can be set as the stage 10, and the support end surface is used to contact the first layer structure 11. In addition, a plurality of suction holes can be set on the support end surface of the stage 10, and the plurality of suction holes are adsorbed on the surface of the first layer structure 11 in the to-be-debonded part to fix the first layer structure 11 on the stage 10. Of course, other fixing methods that can hold the first layer structure 11 on it can also be used.

[0055] Next, refer to Figure 1 , set up a laser system, the laser system is used to generate a laser beam. The laser system can also focus the generated laser beam on the bonding layer 13 of the to-be-bonded component to heat the bonding layer 13, thereby converting the bonding layer 13 material from a bonded solid state to a non-bonded or less bonded molten state, gas or plasma state, etc., to release the bonding of the bonding layer 13 with the first layer structure 11 and the second layer structure 12, thereby achieving debonding between the first layer structure 11 and the second layer structure 12. When setting up the laser system, refer to Figure 3 The laser system may include a laser 21, which is used to generate a laser beam. A focusing lens 22 may be provided downstream of the laser beam 21, which is used to receive the laser beam and focus the laser beam on the bonding layer 13. When the focusing lens 22 is provided, a plano-convex lens or a cylindrical lens may be used as the focusing lens 22. In addition, referring to Figure 3 , a galvanometer system 23 can also be provided, and the galvanometer system 23 is used to control the focus of the laser beam to scan the bonding layer 13, so as to be able to heat and debond the entire bonding layer 13. By setting the galvanometer system 23, it is convenient to control the focus of the laser beam to scan the bonding layer 13. When the galvanometer system 23 is specifically set, it can be a two-axis galvanometer system 23, and it can also be a three-axis galvanometer system 23. It should be explained that the galvanometer system 23 is not a device that must be used in this invention, and other implementation methods that can control the focus of the laser beam to scan the bonding layer 13 can also be used. For example, a stage 10 that can move in a two-dimensional plane can be used as a method for realizing the scanning of the focus of the laser beam on the bonding layer 13.

[0056] Next, continue to refer to Figure 1 , according to the bandgap width E of the bonding layer 13 material g0 , the intrinsic absorption long-wave limit of the laser beam is calculated according to the following formula:

[0057]

[0058] The wavelength of the laser beam determined by the above formula can ensure that the light absorption efficiency of the bonding layer 13 is within a relatively large range, and thus the bonding layer 13 can be heated to a state where a phase change occurs in a relatively short time, thereby quickly releasing the bonding between the bonding layer 13 and the first layer structure 11 and the second layer structure 12, facilitating rapid debonding and improving debonding efficiency. For example, when the material of the bonding layer 13 is silicon (Si), the bandgap width E of silicon is g0 =1.12eV. According to the above formula, the intrinsic absorption long-wave limit λc of the laser beam at this time is approximately equal to 1.1μm. When the material of the bonding layer 13 is GaAs, the bandgap width E of GaAs is g0=1.43eV. According to the above formula, the intrinsic absorption long-wave limit λc of the laser beam at this time is approximately equal to 0.867μm. At this time, the intrinsic absorption long-wave limits of both are in the infrared region. When the material of the bonding layer 13 is CdS, the bandgap width E of CdS is g0 =2.42eV, according to the above formula, the intrinsic absorption long-wave limit λ of the laser beam can be obtained at this time c It is approximately equal to 0.513 μm. At this time, the intrinsic absorption long wave is limited to the visible light region.

[0059] In the manufacturing process of semiconductors, the most important light absorption process is the light absorption caused by the transition of electrons from the valence band to the conduction band, which is called intrinsic absorption or basic absorption. This absorption is accompanied by the generation of electron-hole pairs, which increases the conductivity of the semiconductor, that is, produces photoconductivity. Obviously, the photon energy that causes intrinsic absorption must be equal to or greater than the bandgap width, that is, it needs to meet the following requirements:

[0060] hν≥hν0=E g

[0061] The corresponding wavelength is called the intrinsic absorption long-wave limit. According to the above formula, the formula of the intrinsic absorption long-wave limit of the bonding layer 13 mentioned in the present application can be obtained.

[0062] When the wavelength of the incident light is too long to cause interband transitions or form excitons, light absorption still exists in the semiconductor, and the absorption coefficient increases with the increase of wavelength. This absorption is caused by the transition of free carriers in the same energy band, which is called free carrier absorption. The absorption of electromagnetic energy by carriers depends significantly on frequency (or wavelength). The absorption coefficient of free carriers satisfies the following relationship:

[0063] α∝λ 2

[0064] Here, α represents the absorption coefficient of free carriers, and λ represents the wavelength of the laser.

[0065] Light absorption caused by the interaction between photons and lattice vibrations is called lattice vibration absorption, which mainly occurs in the far-infrared band.

[0066] Next, refer to Figure 1 , according to the intrinsic absorption long-wave limit of the laser beam, the wavelength of the laser beam is determined to be λ0, where λ0≤λ c Specifically, we can choose λ0 = λ c , the light absorption efficiency of the bonding layer 13 is in a relatively large range, and the bonding layer 13 can be heated to a state of phase change in a relatively short time, so as to quickly release the bonding between the bonding layer 13 and the first layer structure 11 and the second layer structure 12, which is convenient for rapid debonding and improves the debonding efficiency. Of course, λ0 can also be equal to 95%λc , 90%λ c , 85%λ c , 80%λ c Equal to or less than λ c Any value of .

[0067] In addition, the bandgap width of the second layer structure 12 of the to-be-debonded member is E g1 When the bandgap width E of the second layer structure 12 is g1 Satisfaction: E g1 >E g0 The laser beam can easily pass through the second layer structure 12 to heat the bonding layer 13 .

[0068] Of course, the wavelength of the laser beam can also be That is, the wavelength λ0 of the laser beam at this time satisfies the following relationship:

[0069]

[0070] The laser beam passing through the second layer structure 12 can have less energy loss, thereby preventing the second layer structure 12 from being overheated and improving the efficiency of heating the bonding layer 13.

[0071] Next, refer to Figure 1 and Figure 3 , controlling the laser beam to pass through the second layer structure 12 and then focus on the bonding layer 13 .

[0072] Next, if Figure 1 As shown, the spot of the laser beam is controlled to scan the bonding layer 13, so that the bonding layer 13 is heated to undergo a phase change, thereby releasing the bonding layer 13 from the first layer structure 11 and the second layer structure 12. This facilitates the subsequent separation of the first layer structure 11 and the second layer structure 12 by stretching them in opposite directions.

[0073] In addition, refer to Figure 4 After controlling the laser beam to pass through the second layer structure 12 and before focusing on the bonding layer 13, the laser debonding method may further include: setting a suction cup assembly, the suction cup assembly including a suction cup 30 adsorbed on the surface of the second layer structure 12, that is, before the laser beam passes through the second layer structure 12, the suction cup 30 is adsorbed on the surface of the second layer structure 12 in advance, so that after the bonding between the first layer structure 11 and the second layer structure 12 is subsequently released, the second layer structure 12 is pulled up at the first time without fixing the suction cup 30, so that the first layer structure 11 and the second layer structure 12 are separated. The bandgap width of the suction cup 30 material may also be set to E g2 , where E g2 >E g0, which is convenient for the laser beam to pass through the suction cup 30, and also reduces the energy loss of the laser beam when passing through the material of the suction cup 30. At this time, controlling the laser beam to focus on the bonding layer 13 after passing through the second layer structure 12 is specifically: controlling the laser beam to pass through the suction cup 30 and the second layer structure 12 from top to bottom in sequence and then focus on the bonding layer 13. By first adsorbing the suction cup 30 on the surface of the second layer structure 12, and then the laser beam passes through the suction cup 30 and the second layer structure 12 from top to bottom in sequence, and then focuses on the debonding layer 13, after the laser spot scans the whole or part of the debonding layer 13, there is no need to move and fix the suction cup 30, and the suction cup 30 can be pulled at the first time to separate the first layer structure 11 and the second layer structure 12, thereby shortening the interval time between the end of the laser spot scanning and the upward pulling of the second layer structure 12, and preventing the interval time from being too long, which causes the heated bonding layer 13 to solidify and re-bond, thereby reducing the difficulty of peeling.

[0074] Of course, the bandgap width E of the material of the suction cup 30 can also be made g2 Greater than or equal to the bandgap width E of the material of the second layer structure 12 g1 Specifically, the bandgap width E of the material of the suction cup 30 can be g2 Equal to the bandgap width E of the material of the second layer structure 12 g1 Or make the bandgap width E of the suction cup 30 material g2 Greater than the bandgap E of the material of the second layer structure 12 g1 , so as to reduce the energy loss of the laser when passing through the suction cup 30 and the second layer structure 12.

[0075] refer to Figure 4 and Figure 5 The suction cup assembly may further include a stretching mechanism 40 connected to the suction cup 30, which is used to pull the second layer structure 12 upwards so that there is a gap between the second layer structure 12 and the first layer structure 11, thereby completely separating them. At this time, the spot of the laser beam is controlled to scan the bonding layer 13 so that the bonding layer 13 is heated and undergoes a phase change. The bonding between the bonding layer 13 and the first layer structure 11 and the second layer structure 12 can be released in the following manner:

[0076] Firstly, the spot of the laser beam is controlled to scan the first area of ​​the bonding layer 13, so that the bonding layer 13 in the first area is heated to undergo a phase change, thereby releasing the bonding between the bonding layer 13 in the first area and the first layer structure 11 and the second layer structure 12; wherein the first area is a partial area of ​​the bonding layer 13;

[0077] Afterwards, the stretching mechanism 40 is controlled to pull the suction cup 30 upward, so that the first layer structure 11 and the second layer structure 12 are separated at a position overlapping with the first area.

[0078] Then, the spot of the laser beam is sequentially controlled to scan the second area to the Nth area of ​​the bonding layer 13, and after scanning one area, the stretching mechanism 40 is controlled to pull the suction cup 30 upward, so that the first layer structure 11 and the second layer structure 12 are separated at a position overlapping with the area just scanned. The first area to the Nth area constitute the entire area of ​​the bonding layer 13.

[0079] After the laser spot scans a partial area of ​​the bonding layer 13, the second layer structure 12 is subsequently stretched to separate the two layer structures at the overlapping position of the partial area, which further shortens the time interval between the spot scanning and the stretching of the second layer structure 12, thereby more securely avoiding the solidification of the bonding layer 13 in the partial area that has just been heated. The peeling method of laser debonding and separation by pulling the suction cup 30 can more securely prevent the two layer structures from sticking together again due to the cooling and solidification of the molten bonding material, thereby further reducing the difficulty of peeling.

[0080] When determining the first layer structure 11 and the second layer structure 12, the first layer structure 11 may be a wafer, and the second layer structure 12 may be a circular substrate, that is, the wafer is fixed on the stage 10, and the laser beam passes through the substrate. This reduces the difficulty of peeling the wafer and the substrate during the laser debonding process. At the same time, avoiding the laser beam from passing through the wafer can prevent the laser beam from affecting the electrical properties of the microelectronic devices on the wafer.

[0081] When the two layers are wafer and substrate, refer to Figure 8 , each area from the first area to the N-1th area is a circular area, and the Nth area is a circular area. And the first area to the Nth area are arranged from the outer circle of the bonding layer 13 to the inner circle in sequence. So that the gaseous or plasma substances generated during the laser debonding process can be dispersed into two layers. Specifically, at this time, the laser system controls the focus of the laser beam to scan from the outer circle of the bonding layer 13 to the inner circle in a concentric circle. So that the gaseous or plasma substances generated during the laser debonding process can be dispersed into two layers. That is, the focus of the laser beam is first focused on the outermost circle of the bonding layer 13, and the focus of the laser beam is controlled to scan a circle in the outermost circle, so that the outermost circle of the bonding layer 13 is heated and debonded. After that, the scanning is gradually stepped from the outer circle to the inner circle in sequence, so that the focus of the laser beam is concentrically scanned from the outer circle of the bonding layer 13 to the inner circle of the bonding layer 13 in sequence, thereby completing the debonding of the entire bonding layer 13. Since the outer ring has completed debonding to form molten, gaseous or plasma materials when the inner ring is debonded, the molten, gaseous or plasma bonding materials generated by the inner ring during the debonding process can overflow. At this time, each circle area is an area from the first area to the N-1th area, and the most central circular area is the Nth area.

[0082] After the laser beam has completed debonding of one of the circles of regions in the bonding layer 13, the stretching mechanism 40 can be controlled to pull the suction cup 30 upwards to separate the first layer structure 11 and the second layer structure 12 at a position that overlaps with the circle of regions. When the scanning and separation method is adopted, the partial area can be a circular ring area in the process of concentric circle scanning of the focus of the laser beam. This is to facilitate pulling the suction cup 30 to separate the two layer structures in a circular ring area. Of course, after the laser beam continuously scans a larger circular ring area composed of at least two adjacent circles of regions, the separation operation can be performed on the first layer structure 11 and the second layer structure 12 at a position that overlaps with the larger circular ring area. At this time, the at least two adjacent circles of regions scanned by the laser beam are one of the first area to the N-1th area, and the most central circular area is the Nth area.

[0083] When the suction cup 30 is provided, the suction cup 30 may have a suction end surface 31 suctioned on the surface of the second layer structure 12. When used, the suction end surface 31 is in close contact with the second layer structure 12 to suction the second layer structure 12. Figure 6 and Figure 7 , multiple circles of adsorption channels 32 distributed in concentric circles can be arranged on the adsorption end surface 31. That is, each circle of adsorption channels 32 is in the shape of a circular ring, and there is a convex end surface between two adjacent circles of adsorption channels 32, so as to be attached to the surface of the second layer structure 12. The negative pressure generated in each circle of adsorption channels 32 is used to realize the adsorption of the partial annular area of ​​the second layer structure 12 by the suction cup 30, and then the suction cup 30 is driven by the stretching mechanism 40 to move upward a little, so that the partial annular areas of the two layer structures that have just been debonded have gaps and separate, so as to apply the same size of suction to the surface of the second layer structure 12 in the same circular area. When specifically determining the number of circles of the adsorption channels 32, the number of circles of the adsorption channels 32 can be 5 circles, 6 circles, 7 circles, 10 circles, 15 circles, 20 circles, etc., which is specifically related to the size of the wafer.

[0084] In addition, an air valve may be provided on each adsorption channel 32, and the air valve is used to control the negative pressure in the corresponding adsorption channel 32, so as to adjust the suction force of different annular areas on the surface of the second layer structure 12. Figure 4 When the laser beam scans from the outer circle to the inner circle in sequence, the negative pressure in the adsorption channel 32 can be increased from the outer circle to the inner circle in sequence, so that when the stretching mechanism 40 stretches the suction cup 30, the second layer structure 12 can be partially warped from the outer circle to the inner circle in sequence, so that the second layer structure 12 and the first layer structure 11 are separated from the outer circle to the inner circle in sequence. After the laser beam scans the innermost circle of the bonding layer 13, the stretching mechanism 40 can drive the second layer structure 12 to move upward, and the second layer structure 12 and the first layer structure 11 are completely separated.

[0085] When setting, the material of the suction cup 30 and the material of the substrate can be the same material, so as to facilitate the selection of the laser wavelength and the control of the laser passing through the adsorption and the substrate. Specifically, the materials of the suction cup 30 and the substrate can be quartz, that is, the suction cup 30 is a quartz disk and the substrate is a quartz substrate, so as to prevent the suction cup 30 and the substrate from affecting the laser transmittance. Of course, the materials of the suction cup 30 and the substrate are not limited to the above-mentioned setting method of the same material. As long as the setting method can make the laser beam pass through the suction cup 30 and the substrate in turn, it is within the protection scope of the present application. And when the suction cup 30 and the substrate are made of the same material, it is not limited to the above-mentioned setting method of both being quartz materials.

[0086] Of course, the suction cup 30 can also be arranged in other ways, for example, Figures 9 to 14 The suction cup 30 may be in the shape of a disk, so as to facilitate the suction of the disk-shaped bonded component to be debonded. The suction cup 30 has a suction end face 31 and a connection end face 33 opposite to each other. Fig. 9 The upper surface of the suction cup 30 shown is a connecting end surface 33, and the lower surface of the suction cup 30 is an adsorption end surface 31. The adsorption end surface 31 is used to be adsorbed on the surface of the second layer structure 12, and the connecting end surface 33 is used to connect to the stretching mechanism 40 to lift a part of the suction cup 30 upward. Figures 9 to 12 As shown, the suction end surface 31 of the suction cup 30 is divided into at least three suction areas 34, and the three suction areas 34 include a circular suction area 34 located at the center of the suction cup 30, and at least two annular suction areas 34 arranged outward in sequence from the circular suction area 34. That is, there are at least three suction areas 34 on the end surface of the suction cup 30, and the at least three suction areas 34 include a circular suction area 34 located at the center of the suction cup 30, and at least two annular suction areas 34, and the at least two annular suction areas 34 are arranged in sequence from the inside to the outside from the circular suction area 34 at the center, so that when the end surface of the suction cup 30 is sucked on the surface of the second layer structure 12, the at least three suction areas 34 on the suction end surface 31 are sucked on the surface of the second layer structure 12. When determining the number of suction areas 34, as shown in FIG. Fig. 9 The number of adsorption areas 34 shown is 4, including a circular adsorption area 34 located at the center, and 3 annular adsorption areas 34 arranged in sequence from the inside to the outside. It should be understood that the number of adsorption areas 34 on the adsorption end surface 31 is not limited to Fig. 9 In addition to the four settings shown, the adsorption areas 34 on the adsorption end surface 31 can also be any value of 3, 5, 6, 8, 12, 18, etc., which is not less than 3.

[0087] refer to Figure 8 , Fig. 9 and Fig.10, the number of adsorption areas 34 divided on the adsorption end surface 31 of the suction cup 30 is also N, so that the N areas from the first area to the Nth area on the bonding layer 13 correspond to the N adsorption areas 34 on the adsorption end surface 31, that is, each area from the first area to the Nth area on the bonding layer 13 corresponds to an adsorption area 34 on the adsorption end surface 31. An adsorption area 34 on the adsorption end surface 31 can be positioned opposite to an area corresponding to the adsorption area 34 on the bonding layer 13, so that after the area of ​​the adsorption area 34 on the bonding layer 13 is laser debonded, the suction cup at the adsorption area 34 is pulled upward, so that the wafer and the substrate are separated at the position of the adsorption area 34, thereby simplifying the peeling difficulty.

[0088] In addition, when determining the suction force of each adsorption area 34 adsorbing the corresponding position of the second layer structure 12, refer to Fig.13 At least three vacuum extractors 35 may be provided, and the at least three vacuum extractors 35 correspond to at least three adsorption areas 34 one by one, and each vacuum extractor 35 is used to adjust the suction force of the corresponding adsorption area 34. Fig.13 As shown, four vacuum extractors 35 are provided, and each vacuum extractor 35 corresponds to one adsorption area 34. That is, a vacuum extractor 35 is provided for each adsorption area 34 to individually adjust the suction force of the corresponding adsorption area 34, so that the suction forces generated by different adsorption areas 34 are different, so that when a certain stretching mechanism 40 lifts the suction cup 30 at the position of the corresponding adsorption area 34, the suction force of the adsorption area 34 is increased or decreased according to the difficulty of lifting the suction cup 30 at the position of the adsorption area 34. For example, the suction force of at least three adsorption areas 34 can be increased from the outer circle to the inner circle of the adsorption end surface 31, so that the suction force generated by the adsorption area 34 near the center position is larger, and the suction force generated by the adsorption area 34 near the edge position is smaller. Because when the stretching mechanism 40 lifts the suction cup 30 of the adsorption area 34 near the edge position, the area of ​​the adsorption area 34 at the edge position is larger, and the suction lever is also larger, so that the lifting difficulty is smaller. The area of ​​the adsorption area 34 near the center is smaller, and the suction lever is also smaller, making it more difficult to lift. The arrangement of the adsorption area 34 near the center having a larger suction force and the adsorption area 34 near the edge having a smaller suction force can prevent the suction cup 30 from separating from the second layer structure 12 due to the suction force between the adsorption area 34 and the second layer structure 12 being too small when the adsorption area 34 located in the inner circle is lifted by the corresponding stretching mechanism 40.

[0089] In addition, refer to Fig.12, multiple circles of adsorption channels 32 distributed in concentric circles can be arranged on the adsorption end surface 31. That is, each circle of adsorption channels 32 is in the shape of a circular ring, and there is a convex end surface between two adjacent circles of adsorption channels 32, so as to be attached to the surface of the second layer structure 12. The number of circles of adsorption channels 32 in each adsorption area 34 can be 1 circle, 2 circles, 3 circles, 5 circles, 10 circles, etc. The negative pressure generated in each circle of adsorption channels 32 is used to realize the adsorption of a partial annular area of ​​the second layer structure 12 by the suction cup 30, and then the stretching mechanism 40 drives the suction cup 30 to move upward a little, so that a gap is generated in the partial annular area of ​​the two layer structures that has just been debonded and separated, so as to apply the same suction force to the surface of the second layer structure 12 in the same circular area.

[0090] refer to Fig.13 , a stretching mechanism 40 is also provided to lift the suction cups 30 at different adsorption areas 34 to separate the two layer structures at different adsorption areas 34. Specifically, there are at least three groups of stretching mechanisms 40, and the at least three groups of stretching mechanisms 40 correspond to at least three adsorption areas 34 one by one. Each group of stretching mechanisms 40 is used to pull up the corresponding adsorption area 34 after the bonding layer 13 at the position of the corresponding adsorption area 34 undergoes phase change by laser heating, so as to separate the first layer structure 11 and the second layer structure 12 at the position of the corresponding adsorption area 34. Fig.13 The number of groups of stretching mechanisms 40 shown is 4, and the 4 groups of stretching mechanisms 40 correspond to the 4 adsorption areas 34 on the adsorption end surface 31 respectively, and each adsorption area 34 corresponds to a group of stretching mechanisms 40, and each group of stretching mechanisms 40 is used to lift the suction cup 30 at the position of the corresponding adsorption area 34, so that the two layer structures are separated at the position of the adsorption area 34. Among them, the two layer structures at the position of each adsorption area 34 refer to the part of the second layer structure 12 adsorbed by each adsorption area 34, and the part of the first layer structure 11 opposite to the part of the second layer structure 12. By dividing the adsorption end surface 31 of the suction cup 30 into at least three adsorption areas 34, each adsorption area 34 is correspondingly provided with a group of stretching mechanisms 40, so that a certain adsorption area 34 of the suction cup 30 can be separately applied with tension. During the laser debonding process, after the laser scans the bonding layer 13 area of ​​the part, the corresponding adsorption area 34 of the suction cup 30 can be lifted immediately to separate the two layer structures at the adsorption area 34, thereby eliminating the need to wait until the entire bonding layer 13 is laser scanned before applying a pulling force to the suction cup 30, thereby shortening the time from scanning the bonding layer 13 of the part to separating the two layer structures of the part, and preventing the bonding layer 13 in the part that is heated by the laser and in a molten state from condensing and bonding again, thereby eliminating the need to apply a large pulling force to the suction cup 30, thereby reducing the difficulty of peeling; and eliminating the need to scan the bonding layer 13 multiple times, thereby reducing the peeling time and improving the peeling efficiency.

[0091] In addition, when setting each stretching mechanism 40, refer to Fig.10 , the stretching mechanism 40 corresponding to the circular adsorption area 34 located at the center and the stretching mechanism 40 corresponding to the annular adsorption area 34 located at the non-center can be set to different structures. Specifically, each of the at least two groups of stretching mechanisms 40 corresponding to at least two annular adsorption areas 34 can include at least three tie rods 41 and a lifting mechanism 44. That is, the stretching mechanism 40 corresponding to each annular adsorption area 34 includes at least three tie rods 41, and each of the three tie rods 41 is connected to the connecting end surface 33 of the suction cup 30. Fig.10 As shown, the stretching mechanism 40 corresponding to each annular adsorption area 34 includes three pull rods 41. It should be noted that the stretching mechanism 40 corresponding to each annular adsorption area 34 is not limited to Fig. 9 The arrangement of the three tie rods 41 shown in the figure can also be 4 tie rods 41, 5 tie rods 41, 6 tie rods 41, etc. And the number of tie rods 41 in the stretching mechanism 40 corresponding to different annular adsorption areas 34 can be as follows: Fig.10 The same arrangement shown in the figure can also make the number of tie rods 41 in the stretching mechanism 40 corresponding to different annular adsorption areas 34 different. Specifically, the number of tie rods 41 in the stretching mechanism 40 located at the edge can be more, and the number of tie rods 41 in the stretching mechanism 40 near the center can be less. Or the number of tie rods 41 in the stretching mechanism 40 located at the edge can be less, and the number of tie rods 41 in the stretching mechanism 40 near the center can be more. Fig.10 The connection points between all the tie rods 41 and the connection end face 33 in the same group of stretching mechanisms 40 are uniformly distributed circumferentially around the center of the suction cup 30, that is, the connection points between all the tie rods 41 and the adsorption end face 31 in the stretching mechanism 40 corresponding to each annular adsorption area 34 are uniformly distributed circumferentially around the center of the suction cup 30, so as to evenly pull the suction cup 30 at each annular adsorption area 34. The lifting mechanism 44 is used to lift at least three tie rods 41 along the axial direction of the suction cup 30, that is, the tension applied to each tie rod 41 is parallel to the axial direction of the suction cup 30, so that the tension direction of the tie rod 41 is parallel to the separation direction of the two layer structures when the two layer structures are separated in the adsorption area 34, thereby simplifying the difficulty of separating the two layer structures at each adsorption area 34. It is convenient to evenly apply tension to each annular adsorption area 34 to prevent the second layer structure 12 from deforming inconsistently in the circumferential direction of each annular adsorption area 34.

[0092] Continue to refer Fig.10, so that the connection points between at least three tie rods 41 in each group of stretching mechanisms 40 and the connecting end surface 33 are located in the annular adsorption area 34 corresponding to the group of stretching mechanisms 40, that is, the connection points between all tie rods 41 in the stretching mechanisms 40 corresponding to each adsorption area 34 and the connecting end surface 33 are located at the position of the corresponding adsorption area 34, so that the connection points between all tie rods 41 in a group of stretching mechanisms 40 and the connecting end surface 33 are closer to the annular adsorption area 34 corresponding to the group of stretching mechanisms 40, thereby improving the lifting efficiency and effect. Of course, it is not limited to the above-mentioned setting method, as long as it is conducive to the separation of the two layer structures in each adsorption area 34, it is within the protection scope of this patent.

[0093] like Fig.10 As shown, when setting the stretching mechanism 40 corresponding to the circular adsorption area 34 at the center position, a group of stretching mechanisms 40 corresponding to the circular adsorption area 34 includes a central pull rod 41 and a lifting mechanism 44. The connection point between the central pull rod 41 and the suction cup 30 is located at the center of the connecting end surface 33, and the lifting mechanism 44 is used to lift the central pull rod 41 along the axial direction of the suction cup 30. That is, by setting a central pull rod 41 as a stretching connector in the circular adsorption area 34, a central pull rod 41 is set in the center, and the suction cup 30 is stretched from the center of the circular adsorption area 34, thereby overcoming the defect that the second layer structure 12 is not deformed uniformly in the circumferential direction of the circular adsorption area 34. It should be noted that the setting method of the stretching mechanism 40 corresponding to the circular adsorption area 34 is not limited to the setting method of the central pull rod 41 shown above, and other setting methods can also be adopted. For example, the setting method of the stretching mechanism 40 corresponding to the circular adsorption area 34 at the center position can be the same as the setting method of the stretching mechanism 40 corresponding to the above-mentioned annular adsorption area 34. That is, the stretching mechanism 40 corresponding to the circular adsorption area 34 also has at least three pull rods 41 , and the at least three pull rods 41 are evenly distributed circumferentially around the center of the suction cup 30 .

[0094] In addition, refer to Fig.10, in at least three groups of stretching mechanisms 40, the radial stepping of the connection points between the pull rod 41 and the connection end surface 33 in any two adjacent groups of stretching mechanisms 40 in the suction cup 30 gradually decreases from the edge of the suction cup 30 to the center of the suction cup 30. It should be explained that the radial stepping of the connection points between the pull rod 41 and the connection end surface 33 in two adjacent groups of stretching mechanisms 40 in the suction cup 30 refers to the radial spacing of the connection points between the pull rod 41 and the connection end surface 33 in the suction cup 30 in the suction cup 30. The larger the spacing, the larger the stepping, which means that the radial spacing of the connection points between the pull rod 41 and the connection end surface 33 in the two adjacent groups of stretching mechanisms 40 is larger; conversely, the smaller the spacing, the smaller the stepping, which means that the radial spacing of the connection points between the pull rod 41 and the connection end surface 33 in the suction cup 30 is smaller. The radial stepping of the connection point between the pull rod 41 and the connecting end face 33 in any two adjacent groups of stretching mechanisms 40 in the suction cup 30 gradually decreases from the edge of the suction cup 30 to the center of the suction cup 30, which means that the radial stepping of the connection point between the pull rod 41 and the connecting end face 33 in the suction cup 30 in the two adjacent groups of stretching mechanisms 40 near the edge is larger, and the radial stepping of the connection point between the pull rod 41 and the connecting end face 33 in the two adjacent groups of stretching mechanisms 40 near the center position is smaller, so as to offset the influence of the difficulty of deformation of the inner circle of the second layer structure 12 relative to the outer circle, so that the lifting height of each group of stretching mechanisms 40 to the corresponding adsorption area 34 is more consistent.

[0095] refer to Fig.14 , each of the at least two groups of stretching mechanisms 40 corresponding to the at least two annular adsorption areas 34 may further include a bracket 42, the bracket 42 includes at least three arms 43, and the at least three arms 43 correspond one to one to at least three pull rods 41 in the corresponding group of stretching mechanisms 40. Among them, each arm 43 is connected to the corresponding pull rod 41, and the axial direction of each pull rod 41 is parallel to the axial direction of the suction cup 30. That is, a bracket 42 is also provided in the stretching mechanism 40 corresponding to each annular adsorption area 34 to connect all the pull rods 41 in the stretching mechanism 40 into an integrated structure. When specifically connected, by connecting all the pull rods 41 in the stretching mechanism 40 to the arms 43 on the bracket 42, the lifting mechanism 44 lifts all the pull rods 41 in the stretching mechanism 40 by lifting the bracket 42, so as to apply a more consistent pulling force to all the pull rods 41 in the same group of stretching mechanisms 40.

[0096] Of course, when there is only one central pull rod 41 in the stretching mechanism 40 corresponding to the circular adsorption area 34 located at the center, the bracket 42 may not be provided, and the lifting mechanism 44 may directly lift the one central pull rod 41. When the stretching mechanism 40 corresponding to the circular adsorption area 34 adopts the same setting method as the stretching mechanism 40 of the annular adsorption area 34, and also includes at least three pull rods 41, the above-mentioned bracket 42 may be used to connect the multiple pull rods 41 into an integrated structure, so that the lifting mechanism 44 can lift the multiple pull rods 41 together, and apply a more consistent pulling force to all the pull rods 41 in the same group of stretching mechanisms 40.

[0097] When setting the lifting mechanism 44, continue to refer to Fig.14 , the lifting mechanism 44 can be a rack and pinion lifter, the rack of the rack and pinion lifter is fixedly connected to the support arm 43 or the center pull rod 41, and the transmission direction of the rack coincides with the axial direction of the suction cup 30. To simplify the structure of the lifting mechanism 44. It should be understood that the lifting mechanism 44 is not limited to the setting method of the rack and pinion lifter. In addition, other settings can also be adopted. For example, a screw lifter can be used as the lifting mechanism 44, and the screw of the screw lifter is connected to the bracket 42 or the center pull rod 41, which can also achieve the lifting of the pull rod 41 and the suction cup 30.

[0098] By first calculating the intrinsic absorption long-wave limit of the laser beam according to the bandgap width of the bonding layer 13 material, and then determining the wavelength of the final laser beam according to the intrinsic absorption long-wave limit of the laser beam, the appropriate laser wavelength can be quickly determined, simplifying the difficulty of determining the laser wavelength, reducing the workload, and reducing the cost. When the bonding layer 13 is scanned with a laser beam of the wavelength finally determined, the light absorption efficiency of the bonding layer 13 can be ensured to be within a relatively large range, and the bonding layer 13 can be heated to a state where a phase change occurs in a relatively short time, thereby quickly releasing the bonding layer 13 from the first layer structure 11 and the second layer structure 12, facilitating rapid debonding and improving debonding efficiency.

[0099] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A laser debonding method for debonding a part to be debonded, wherein: The to-be-debonded component includes a first layer structure and a second layer structure bonded by a bonding layer, and is characterized in that the laser debonding method includes: The to-be-debonded member is held on a stage, wherein the first layer structure is in contact with the stage; providing a laser system for generating a laser beam; According to the bandgap width E of the bonding layer material g0 , the intrinsic absorption long-wave limit of the laser beam is calculated according to the following formula: According to the intrinsic absorption long-wave limit of the laser beam, the wavelength of the laser beam is determined to be λ0, where λ0≤λ c ; A suction cup assembly is provided, wherein the suction cup assembly comprises a suction cup adsorbed on the surface of the second layer structure; and the bandgap width of the suction cup material is E g2 , where E g2 >E g0 ; The laser beam is controlled to pass through the suction cup and the second layer structure from top to bottom in sequence and then focus on the bonding layer; the bandgap width of the second layer structure material is E g1 , where E g1 >E g0 ; Controlling the spot of the laser beam to scan the bonding layer, so that the bonding layer is heated to undergo a phase change, thereby releasing the bonding between the bonding layer and the first layer structure and the second layer structure; After the laser scans the bonding layer area of ​​the part, the corresponding adsorption area of ​​the suction cup is lifted to separate the two layer structures at the position of the adsorption area; The suction cup assembly has an adsorption end surface adsorbed on the surface of the second layer structure, the adsorption end surface is in close contact with the second layer structure to adsorb the second layer structure, and a plurality of adsorption channels distributed in concentric circles are arranged on the adsorption end surface; When the laser beam scans from the outer circle to the inner circle, the negative pressure in the adsorption channel is increased from the outer circle to the inner circle, so that the stretching mechanism stretches the suction cup to perform local warping operation on the second layer structure from the outer circle to the inner circle, so that the second layer structure and the first layer structure are separated from the outer circle to the inner circle.

2. The laser debonding method according to claim 1, characterized in that: The wavelength of the laser beam 3. The laser debonding method according to claim 1, characterized in that: The bandgap width E of the suction cup material g2 Greater than or equal to the bandgap width E of the second layer structural material g1 .

4. The laser debonding method according to claim 1, characterized in that: The suction cup assembly also includes a stretching mechanism connected to the suction cup; The step of controlling the spot of the laser beam to scan the bonding layer so that the bonding layer is heated to undergo a phase change, and releasing the bonding between the bonding layer and the first layer structure and the second layer structure comprises: Controlling the spot of the laser beam to scan a first area of ​​the bonding layer, so that the bonding layer in the first area is heated to undergo a phase change, thereby releasing the bonding between the bonding layer in the first area and the first layer structure and the second layer structure; wherein the first area is a partial area of ​​the bonding layer; Controlling the stretching mechanism to pull the suction cup upwards, so that the first layer structure and the second layer structure are separated at a position overlapping with the first area; The laser beam spot is sequentially controlled to scan the second area to the Nth area of ​​the bonding layer, and after scanning one area, the stretching mechanism is controlled to pull the suction cup upward so that the first layer structure and the second layer structure are separated at a position overlapping with an area just scanned; wherein the first area to the Nth area constitute the entire area of ​​the bonding layer.

5. The laser debonding method according to claim 4, characterized in that: The first layer structure is a wafer, and the second layer structure is a substrate.

6. The laser debonding method according to claim 5, characterized in that: Each of the first to N-1th regions is a circular ring region, and the Nth region is a circular region; Furthermore, the first region to the Nth region are arranged sequentially from the outer circle to the inner circle of the bonding layer.

7. The laser debonding method according to claim 5, characterized in that: The suction cup and the substrate are both made of quartz.

8. The laser debonding method according to claim 1, characterized in that: The laser system also includes a galvanometer system; The step of controlling the spot of the laser beam to scan the bonding layer specifically includes: controlling the galvanometer system to make the spot of the laser beam scan the bonding layer.

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