Substrate support carrier with improved bonding layer protection

Abstract

A substrate support pedestal includes an electrostatic chuck, a cooling base, an airflow channel, a porous plug, and a sealing member. The electrostatic chuck includes a body having a cavity. The cooling base is coupled to the electrostatic chuck via a bonding layer. The airflow channel is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The airflow channel further includes a cavity. The porous plug is positioned within the cavity to control airflow through the airflow channel. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a substrate support pedestal having a protected bonding layer for use in a substrate processing chamber. Background Art

[0002] Substrate support pedestals are widely used to support substrates within semiconductor processing systems during substrate processing. The substrate support pedestal typically comprises an electrostatic chuck bonded to a cooling base with a bonding layer. The electrostatic chuck typically includes one or more embedded electrodes that are driven to a potential during processing to hold the substrate against the electrostatic chuck. The cooling base typically includes one or more cooling channels that help control the temperature of the substrate during processing. Furthermore, the electrostatic chuck may include one or more gas flow channels that allow gas to flow between the electrostatic chuck and the substrate to assist in controlling the substrate's temperature during processing. The gas fills the region between the electrostatic chuck and the substrate, thereby increasing the rate of heat transfer between the substrate and the substrate support. However, when the substrate is not present, the gas flow channels also provide a path for process gases to flow into the region between the electrostatic chuck and the cooling base where the bonding layer is located. Consequently, the bonding layer is eroded by the process gases.

[0003] Erosion of the bonding layer is problematic for at least two reasons. First, material eroded from the bonding layer is a process contaminant that can create defects and reduce product yield. Second, when the bonding layer erodes, the local rate of heat transfer between the electrostatic chuck and the cooling base changes, creating unwanted temperature non-uniformity across the substrate and leading to process drift.

[0004] Therefore, there is a need for an improved substrate support pedestal. Summary of the Invention

[0005] In one example, an electrostatic chuck includes a body comprising a top surface, a cavity, an airflow channel, and a porous plug. The airflow channel is formed between the top surface and the cavity. The porous plug is positioned within the cavity. A sealing member is positioned adjacent to the porous plug and configured to form one or more of: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and a cooling base that engages the electrostatic chuck.

[0006] In one example, a substrate support pedestal is provided, comprising an electrostatic chuck, a cooling base, an airflow channel, a porous plug, and a sealing member. The electrostatic chuck has a body including a cavity. The cooling base is coupled to the electrostatic chuck via a bonding layer. The airflow channel is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The airflow channel further includes a cavity. The porous plug is positioned within the cavity. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.

[0007] In one embodiment, a process chamber includes a chamber body, an electrostatic chuck, a cooling base, an airflow channel, a porous plug, and a sealing member. The chamber body has a processing space. The electrostatic chuck is disposed in the processing space and has a top surface configured to support a substrate during processing. The electrostatic chuck further includes a bottom surface and a cavity. The cooling base is coupled to the electrostatic chuck via a bonding layer. An airflow channel is formed between the top surface of the electrostatic chuck and the bottom surface of the cooling base. In addition, the airflow channel passes through the cavity. The porous plug is positioned within the cavity. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of: a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The features of the present disclosure, briefly summarized above and discussed in more detail below, can be understood by reference to the embodiments of the present disclosure shown in the accompanying drawings. It should be noted, however, that the drawings depict only embodiments of the present disclosure and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments.

[0009] Figure 1 A schematic diagram depicting a process chamber having a substrate support pedestal according to one or more embodiments.

[0010] Figure 2 Depicted is a partial cross-sectional view of a substrate support pedestal in accordance with one or more embodiments.

[0011] Figure 3 、 Figure 4 、 Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 and Figure 9 is a partial cross-sectional view of a substrate support pedestal according to one or more embodiments.

[0012] To facilitate understanding, identical reference numerals have been used, where possible, to designate elements that are common to the figures. DETAILED DESCRIPTION

[0013] The systems and methods discussed in the present disclosure utilize a substrate support pedestal having a cooling base and an electrostatic chuck, the cooling base and the electrostatic chuck being joined together via a bonding layer. A porous plug is positioned within a gas flow channel formed within the cooling base and the electrostatic chuck. The confinement of the porous plug protects the bonding layer from process gases used during substrate processing. Advantageously, the following embodiments discuss improved techniques for securing the porous plug within the gas flow channel to prevent degradation of the bonding layer by utilizing a radial seal that substantially prevents gas from flowing around the porous plug.

[0014] Figure 1 A schematic diagram of a process chamber 100 is depicted, according to one or more embodiments. The process chamber 100 includes at least one inductive coil antenna segment 112A and a conductive coil antenna segment 112B, both positioned outside a dielectric ceiling 120. The inductive coil antenna segment 112A and the conductive coil antenna segment 112B are each coupled to a radio frequency (RF) source 118 that generates an RF signal. The RF source 118 is coupled to the inductive coil antenna segment 112A and to the conductive coil antenna segment 112B via a matching network 119. The process chamber 100 also includes a substrate support pedestal 116 coupled to an RF source 122 that generates an RF signal. The RF source 122 is coupled to the substrate support pedestal 116 via a matching network 124. The process chamber 100 also includes a chamber wall 130 that is conductive and connected to an electrical ground 134.

[0015] The controller 140 includes a central processing unit (CPU) 144, a memory 142, and support circuits 146. The controller 140 is coupled to various components of the process chamber 100 to facilitate control of substrate processing processes.

[0016] In operation, a semiconductor substrate 114 is placed on the substrate support pedestal 116, and gaseous components are supplied from the gas panel 138 through the inlet port 126 to the process chamber 100 to form a gaseous mixture in the processing volume 150 of the process chamber 100. RF power from the RF sources 118 and 122 is applied to the inductive coil antenna segment 112A, the conductive coil antenna segment 112B, and the substrate support pedestal 116, respectively, to ignite the gaseous mixture in the processing volume 150 into a plasma. Chemically reactive ions are released from the plasma and strike the substrate, thereby removing exposed material from the surface of the substrate.

[0017] The pressure inside the process chamber 100 is controlled using a throttle valve 127 located between the process chamber 100 and the vacuum pump 136. The temperature at the surface of the chamber wall 130 of the process chamber 100 is controlled using a liquid-containing conduit (not shown) located in the chamber wall 130 of the process chamber 100.

[0018] The substrate support pedestal 116 includes an electrostatic chuck 102 disposed on a cooling base 104. The substrate support pedestal 116 is typically supported above the bottom of the process chamber 100 by a shaft 107 coupled to the cooling base 104. The substrate support pedestal 116 is secured to the shaft 107 such that the substrate support pedestal 116 can be removed from the shaft 107, refurbished, and re-secured to the shaft 107. The shaft 107 is sealed to the cooling base 104 to isolate the various conduits and electrical leads disposed therein from the process environment within the process chamber 100. Alternatively, the electrostatic chuck 102 and the cooling base 104 can be disposed on an insulating plate attached to a ground plate or chassis. Additionally, the ground plate can be attached to one or more chamber walls 130.

[0019] The temperature of the semiconductor substrate 114 is controlled by stabilizing the temperature of the electrostatic chuck 102. For example, a backside gas (e.g., helium or other gas) can be provided by a gas source 148 to a gas chamber defined between the semiconductor substrate 114 and the support surface 106 of the electrostatic chuck 102. The backside gas is used to facilitate heat transfer between the semiconductor substrate 114 and the substrate support pedestal 116 to control the temperature of the substrate 114 during processing. The electrostatic chuck 102 can include one or more heaters. For example, the heater can be an electric heater or the like.

[0020] Figure 2 Depicted is a diagram according to one or more embodiments Figure 1 A vertical cross-sectional view of a portion of the substrate support pedestal 116 is shown in FIG. As discussed above, the substrate support pedestal 116 has a cooling base 104 secured to the electrostatic chuck 102. Figure 2 In the example shown, the cooling base 104 is secured to the electrostatic chuck 102 via a bonding layer 204 .

[0021] The bonding layer 204 includes one or more materials, such as an acrylic or silicone-based adhesive, an epoxy, a neoprene-based adhesive, an optically clear adhesive (such as a clear acrylic adhesive), or other suitable adhesive materials.

[0022] The cooling base 104 is typically made of a metal material, such as stainless steel, aluminum, aluminum alloys, or other suitable materials. Furthermore, the cooling base 104 includes one or more cooling channels 212 disposed therein that circulate a heat transfer fluid to maintain thermal control of the substrate support pedestal 116 and the substrate 114.

[0023] The electrostatic chuck 102 is generally circular in shape, but may alternatively include other geometries to accommodate non-circular substrates. For example, when used to process display glass (such as glass for flat panel displays), the electrostatic chuck 102 may include square or rectangular substrates. The electrostatic chuck 102 generally includes a body 206 that includes one or more electrodes 208. The electrodes 208 are composed of a conductive material such as copper, graphite, tungsten, molybdenum, etc. Various embodiments of electrode structures include, but are not limited to, a pair of coplanar D-shaped electrodes, coplanar interdigital electrodes, a plurality of coaxial ring electrodes, single or circular electrodes, or other structures. The electrodes 208 are coupled to the power supply 125 via a feedthrough 209 disposed in the substrate support base 116. The power supply 125 can drive the electrodes 208 with a positive or negative voltage. For example, the power supply 125 can drive the electrodes 208 with a voltage of approximately -1000 volts or approximately 2500 volts. Alternatively, other negative voltages or other positive voltages may be utilized.

[0024] The body 206 of the electrostatic chuck 102 may be made of a ceramic material. For example, the body 206 of the electrostatic chuck 102 may be made of a ceramic material with a low resistivity (ie, having a resistivity of about 1xE). 9 to about 1xE 11 ohm-cm). Examples of low resistivity materials include doped ceramics, such as alumina doped with titanium oxide or chromium oxide, doped aluminum oxide, doped boron nitride, and the like. Other materials with comparable resistivity, such as aluminum nitride, may also be used. Such ceramic materials with relatively low resistivity generally promote Johnsen-Rahbek attraction between the substrate and the electrostatic chuck 102 when power is applied to the electrode 208. Alternatively, a body 206 comprising a ceramic material having a resistivity equal to or greater than 1Ex may be used. 11 ohms-cm. Additionally, the body 206 of the electrostatic chuck 102 may be made of alumina.

[0025] The support surface 106 of the body 206 includes a plurality of mesas 216 disposed inwardly of a sealing ring (not shown), and the plurality of mesas 216 are formed on the support surface 106. The sealing ring is formed of the same material as the body 206, but may also be formed of other dielectric materials. The mesas 216 are typically formed of one or more layers of an electrically insulating material having a dielectric constant in the range of about 5 to about 10. Examples of such insulating materials include, but are not limited to, silicon nitride, silicon dioxide, aluminum oxide, tantalum pentoxide, polyimide, and the like. Alternatively, the mesas 216 may be formed of the same material as the body 206 and then coated with a high-resistivity dielectric film.

[0026] During operation, the electric field generated by driving the electrodes 208 holds the substrate 114 to the support surface 106 via a clamping force. The clamping force is greatest at each mesa 216. Furthermore, the position and / or size of the mesas 216 can be adjusted to achieve a uniform charge distribution across the backside of the substrate.

[0027] 104 , the electrostatic chuck 102 includes a support surface 106 of the electrostatic chuck 102 and a cooling base 104. The support surface 106 of ...

[0028] The airflow channel 270 extends from the support surface 106 of the body 206 to the bottom surface 284 of the cooling base 104. The airflow channel 270 includes the opening 210 in the electrostatic chuck 102, the opening 209 in the cooling base 104, and a cavity 211 formed in the body 206 of the electrostatic chuck 102. The cavity 211 may have a cross-section (such as a diameter) that is larger than the cross-section of at least one of the opening 210 and the opening 209. The diameter of the opening 209 may be larger than, smaller than, or equal to the diameter of the opening 210. In addition, although Figure 2 A single air flow channel 270 is shown in FIG. 1 , but the substrate support pedestal 116 may include multiple air flow channels.

[0029] The gas flow channels 270 are coupled to the gas source 148. Additionally, each gas flow channel 270 may be coupled to the gas source 148 through a single port 272. Alternatively, each gas flow channel 270 may be individually coupled to the gas source 148 through separate ports 272.

[0030] The porous plug 244 is typically positioned within the gas flow channel 270 (within the cavity 211) such that it forms a portion of the gas flow channel 270. The porous plug 244 provides a path for pressurized gas to flow between two surfaces at different electrical potentials. For example, the porous plug 244 provides a path for pressurized gas to flow between the first and second surfaces of the electrostatic chuck 102 and between the first surface of the electrostatic chuck 102 and the first surface of the cooling base 104. Furthermore, the porous plug 244 includes a plurality of small passageways, which reduces the likelihood of plasma ignition in the gap 204A between the electrostatic chuck 102 and the cooling base 104, compared to designs that do not include the porous plug 244. The porous plug 244 is typically composed of a ceramic material, such as alumina or aluminum nitride. Alternatively, the porous plug 244 may be composed of other porous materials. Furthermore, the porous plug 244 may have a porosity of approximately 30% to approximately 80%. Alternatively, the porous plug may have a porosity of less than 30% or greater than 80%. Additionally, the porous plug 244 abuts a step 250 that defines the top of the cavity 211 .

[0031] The porous plug 244 has a T-shape. Compared to porous plugs of other shapes, the T-shaped porous plug provides increased airflow and is easier to install in the cavity 211. The porous plug 244 may include a head 251 and a shaft 252. The head 251 has a diameter 253, and the shaft 252 has a diameter 254. In addition, the diameter 253 is larger than the diameter 254. In addition, the head includes a bottom surface 255 that meets the shaft 252. The head 251 further includes a surface 256 facing the side wall 205 of the cavity 211. In addition, the shaft 252 includes a surface 257 facing the side wall 205 of the cavity 211. In various embodiments, the porous plug 244 can be positioned in the cavity 211 using various techniques (such as press fit, slide fit, clearance fit, pinning and bonding, etc.). For example, the porous plug 244 may be positioned within the cavity such that the surface 256 of the head 251 is in contact with the sidewall 205 , or such that a gap exists between the surface 256 of the head 251 and the sidewall 205 .

[0032] A sealing member 245 is disposed adjacent to the porous plug 244. The sealing member 245 forms a seal between a surface 257 of the porous plug 244 and the sidewall 205 of the cavity 211. The sealing member 245 may form at least one of a radial seal between the porous plug 244 and the cavity 211 and an axial seal between the porous plug 244 and the cooling base 104. In addition, the sealing member 245 may secure the porous plug 244 within the cavity 211. For example, the sealing member 245 may be coupled to at least one of the porous plug 244 and the sidewall 205 of the cavity 211 using various techniques, such as press-fitting, pinning, and bonding. The sealing member 245 may mechanically secure the porous plug 244 to the sidewall 205 of the cavity 211.

[0033] The sealing member 245 may be made of an elastic polymer material (e.g., an elastomer). In addition, the sealing member 245 may be made of one or more of a fluoroelastomer material (e.g., FKM), a perfluoroelastomer material (e.g., FFKM), and a high-purity ceramic. The purity of the high-purity ceramic may be greater than 99%, and may be a ceramic paste or a solid suspended in a solution. In addition, the sealing member 245 may be made of a material that is resistant to corrosion by the process gas. For example, in the presence of the process gas, the corrosion-resistant material will not corrode. Alternatively, or even more, the material of the sealing member 245 is selected so that the material does not penetrate the porous plug 244. The sealing member 245 may be an O-ring, a cylindrical gasket, or other annular seal. Alternatively, the sealing member 245 may be formed of a material that is applied in a liquid, paste, and / or gel and changes its state into a substantially solid or gel form. In addition, the sealing member 245 may be made of a substantially non-viscous material.

[0034] The bonding layer 204 secures the body 206 to the cooling base 104. Furthermore, a gap 204A is formed in the bonding layer 204 and is part of the gas flow channel 270. Because the material or materials comprising the bonding layer 204 are typically susceptible to corrosion in the presence of process gases used during substrate processing, various methods have been explored for protecting the bonding layer 204 from the effects of the process gases. Advantageously, by employing a sealing member (e.g., sealing member 245) that is highly resistant to process gases, the process gases can be prevented from passing through the porous plug 244. Consequently, the useful life of the bonding layer 204 is increased. Furthermore, the useful life of the substrate support pedestal 116 is also increased.

[0035] Figure 3 2 is a schematic cross-sectional view of a portion 201 of the substrate support pedestal 116 according to one or more embodiments. As described above, the porous plug 244 has a head 251 and a shaft 252, forming a T-shape of the porous plug 244. The T-shaped porous plug can provide better airflow than porous plugs of other shapes and can be more easily installed in the cavity 211. In addition, the porous plug 244 prevents backside gas from flowing into the gap between the electrostatic chuck 102 and the cooling base 104 and from adversely affecting (e.g., corroding) the bonding layer 204.

[0036] The porous plug 244 can extend from a first end 302 of the cavity 211 to a second end 304 of the cavity 211. For example, a surface 306 of the porous plug 244 can contact a surface 309 of the cavity, and a surface 308 of the porous plug 244 can be coplanar with a surface 307 of the electrostatic chuck 102, such that the surface 308 extends substantially into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Alternatively, the surface 308 can extend into the gap 305 between the electrostatic chuck 102 and the cooling base 104. Furthermore, the surface 308 can be between the surface 309 and the surface 307.

[0037] As mentioned above about Figure 2 As described, the diameter 253 of the porous plug 244 is larger than the diameter 332 of the opening 210. In addition, the porous plug 244 is concentric with the opening 210. Alternatively, or even more, the porous plug 244 is concentric with the opening 209.

[0038] Cavity 211 includes a chamfered edge 310 formed where sidewall 205 intersects bottom surface 307 of electrostatic chuck 102. Furthermore, porous plug 244 may have a chamfered edge where surface 306 intersects surface 256. Chamfered edge 310 of cavity 211 and chamfered edge 320 of porous plug 244 facilitate insertion of porous plug 244 into cavity 211. Furthermore, chamfered edge 310 reduces potential damage to sealing member 245 when it is inserted into the cavity around porous plug 244 or when sealing member 245 expands during substrate processing.

[0039] Sealing member 245 is adjacent to porous plug 244. Sealing member 245 forms a radial seal between porous plug 244 and cavity 211. For example, sealing member 245 may contact surface 257 of porous plug 244 and sidewall 205 of cavity 211, thereby preventing process gas from flowing along the sides of porous plug 244. In addition, sealing member 245 may secure porous plug 244 within cavity 211. For example, sealing member 245 may exert a force on sidewall 205 of cavity 211 and surface 257 of porous plug 244, thereby retaining porous plug 244 within cavity 211. In addition, sealing member 245 includes surfaces 356 and 357. One or more of surfaces 356 and 357 may have a substantially curved shape. The substantially curved shape may be convex or concave. In addition, one or more of surfaces 356 and 357 may have a substantially flat shape.

[0040] Sealing member 245 may reside entirely within cavity 211, or sealing member 245 may extend at least partially into gap 305 between electrostatic chuck 102 and cooling base 104. Furthermore, sealing member 245 may be sized so that it does not extend beyond the opening of cavity 211 defined between surface 255 of porous plug 244, surface 257 of shaft 252, surface 307 of electrostatic chuck 102, and sidewall 205 of cavity 211. Alternatively, or more specifically, bonding layer 204 may extend into gap 305 such that bonding layer 204 at least partially contacts sealing member 245.

[0041] Figure 4 is a schematic cross-sectional view of a portion 201 of a substrate support pedestal 116 having a different sealing member 445. Figure 3 Compared with the sealing member 245, Figure 4 Sealing member 445 forms a radial seal between surface 257 of shaft 252 and sidewall 205 of cavity 211, and an axial seal between surface 255 of porous plug 244 and surface 404 of cooling base 104. For example, sealing member 245 may contact surfaces 257 and 255 of porous plug 244, sidewall 205 of cavity 211, and surface 404 of cooling base 104. Sealing member 445 is positioned adjacent to porous plug 244. For example, sealing member 445 is positioned between porous plug 244 and the sidewall of cavity 211. Furthermore, sealing member 445 is positioned between porous plug 244 and cooling base 104. Furthermore, sealing member 445 may be formed similar to sealing member 245. For example, sealing member 445 may be an O-ring, a cylindrical gasket, or other annular seal. Furthermore, sealing member 245 may be formed from a material that is resistant to corrosion by process gases used during substrate processing, as described above with respect to sealing member 245. In addition, sealing member 445 includes surfaces 456 and 457. One or more of surfaces 456 and 457 may have a substantially curved shape. The substantially curved shape may be convex or concave. In addition, one or more of surfaces 456 and 457 may have a substantially flat shape. In addition, bonding layer 204 may at least partially contact sealing member 445.

[0042] Figure 5 is a schematic cross-section of a portion 201 of a substrate support base 116 having various sealing members 545 and porous plugs 544. The porous plugs 544 are configured similarly to Figure 2 and Figure 3244, however, rather than comprising a T-shape, the porous plug 544 comprises a cylindrical shape. A sealing member 545 is positioned adjacent to the porous plug 544. For example, the sealing member 545 is positioned between the porous plug 544 and the sidewall of the cavity 211. Additionally, the sealing member can be positioned between the surface 309 of the cavity 211 and the cooling base 104. The porous plug 544 has a diameter 530, a top surface 506, a bottom surface 508, and a surface 550. The top surface 506 contacts the surface 309 of the cavity 211. Additionally, the surface 508 can be recessed within the cavity 211, coplanar with the surface 307 of the electrostatic chuck 102, or extend into the gap 305 formed between the surface 307 of the electrostatic chuck and the surface 404 of the cooling base 104. The diameter 530 of the porous plug 544 is greater than the diameter 532 of the opening 210.

[0043] The sealing member 545 can be formed as a sealing member similar to the sealing member 245. For example, the sealing member 545 can be an O-ring, a cylindrical gasket, or other annular seal. In addition, the sealing member 545 can be formed of a material that is resistant to corrosion in the presence of process gases used during substrate processing as described above with respect to the sealing member 245. The sealing member 545 forms a radial seal between the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211. For example, the sealing member 545 contacts the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211, as shown in FIG. Figure 4 4. The sealing member 445 shown. In addition, the sealing member 545 can form an axial seal between the surface 309 of the cavity 211 and the surface 404 of the cooling base 104. For example, the sealing member 545 can contact the surface 309 of the cavity 211 and contact the surface 404 of the cooling base 104. The sealing member 545 includes surfaces 556 and 557. One or more of the surfaces 556 and 557 can have a substantially curved shape. The substantially curved shape can be convex or concave. One or more of the surfaces 556 and 557 can have a substantially flat shape. In addition, the bonding layer 204 can protrude into the gap 305 so that the bonding layer 204 at least partially contacts the sealing member 545.

[0044] Figure 6 is a schematic cross-sectional view of a portion 201 of a substrate support pedestal 116 having a different sealing member 645 according to one or more embodiments. Figure 3 Compared with the sealing member 245, Figure 6The sealing member 645 is formed by applying a material that changes its state to a substantially solid or gel form in the form of a liquid, paste, or gel. For example, the sealing member 645 can be formed from one of a fluoroelastomer material, a perfluoroelastomer material, and a high-purity ceramic packaging material, which can be flowed or otherwise disposed in the cavity 211 surrounding the porous plug 244, changing its state to a more solid and substantially immobile form. The sealing member 645 is disposed adjacent to the porous plug 244 so that the material is disposed between the surface 257 and the surface 255 of the porous plug 244 and the sidewall 205 of the cavity 211. In addition, the material can be exposed to a predetermined pressure, temperature, and / or energy source to change the material to a substantially immobile form and produce the sealing member 645. The temperature used to change the material to a substantially immobile file can be less than about 300 degrees Celsius. Alternatively, other temperatures can be utilized. Additionally, sealing member 645 secures porous plug 244 in cavity 211 while forming a radial seal between surface 257 of porous plug 244 and sidewall 205 of cavity 211. Furthermore, bonding layer 204 may protrude into gap 305 such that bonding layer 204 at least partially contacts sealing member 645.

[0045] Figure 7 is a schematic cross-sectional view of a portion 201 of a substrate support pedestal 116 having a different sealing member 745 according to one or more embodiments. Figure 5 Compared with the sealing member 545, Figure 7 The sealing member 745 is formed from a material that is applied in the form of a liquid, paste, or gel to change its state to a substantially solid or gel form. For example, the sealing member 745 can be formed from one of a fluoroelastomer material, a perfluoroelastomer material, and a high-purity ceramic packaging material, and can be flowed or otherwise disposed in the cavity 211 surrounding the porous plug 544, changing its state to a more solid and substantially immobile form. The material can be disposed between the surface 550 of the porous plug 544 and the sidewall 205 and surface 309 of the cavity 211. Furthermore, the material is exposed to a predetermined pressure, temperature, and / or energy source to change the material to a substantially immobile form and create the sealing member 745. Furthermore, the sealing member 745 contacts the surface 550 of the porous plug 544 and the surface 309 and sidewall 205 of the cavity 211, thereby securing the porous plug 544 in the cavity 211. Furthermore, the sealing member 745 forms a radial seal between the surface 550 of the porous plug 544 and the sidewall 205 of the cavity 211. Furthermore, the bonding layer 204 may protrude into the gap 305 such that the bonding layer 204 at least partially contacts the sealing member 745 .

[0046] Figure 8 is with Figure 2Schematic cross section of portion 201 of substrate support base 116 with a different porous plug 844 and a different sealing member 845 compared to the embodiment of FIG. Figure 2 Compared to the porous plug 244, the porous plug 844 comprises a cylindrical shape. Figure 5 Compared to porous plug 544, porous plug 844 has a diameter 830 that is greater than diameter 530 of porous plug 544, such that porous plug 844 fills cavity 211 more than porous plug 544. The diameter of porous plug 844 is greater than diameter 832 of opening 210. Top surface 806 contacts surface 309 of cavity 211. Surface 808 may be coplanar with surface 307 of electrostatic chuck 102. Porous plug 844 may have a chamfered edge along surface 806 similar to Figure 3 The chamfered edge of the porous plug 244 is shown.

[0047] Sealing member 845 can be formed as a sealing member similar to sealing member 245. For example, sealing member 845 can be an O-ring, a cylindrical gasket, or other annular seal. In addition, sealing member 845 can be formed from a material that is resistant to corrosion in the presence of process gases used during substrate processing as described above with respect to sealing member 245. Sealing member 845 forms an axial seal between surface 808 of porous plug 844, surface 307 of electrostatic chuck 102, and surface 809 of cooling base 104. For example, sealing member 845 contacts surface 809 of porous plug 844 and surface 307 of electrostatic chuck 102. In addition, sealing member 845 contacts surface 809 of cooling base 104.

[0048] The sealing member 845 is positioned adjacent to the porous plug 844. For example, the sealing member 845 is positioned between the porous plug 844 and the cooling base 104.

[0049] The cooling base 104 may include a groove 810. Surface 809 of the cooling base 104 forms the bottom of the groove 810. A sealing member 845 is positioned in the groove 810 and between the cooling base 104 and the electrostatic chuck 102. The groove 810 at least partially overlaps a portion of the cavity 211 and a portion of the electrostatic chuck 102, thereby allowing the groove 810 to effectively position the sealing member 845 over and seal the gap defined between the porous plug 844 and the electrostatic chuck 102. Compared to embodiments that do not include the groove 810, the groove 810 allows for a larger cross-sectional seal without increasing the thickness of the bonding layer. Furthermore, the groove 810 reduces the effects of manufacturing tolerances and allows for sealing over a wider temperature range. In one or more embodiments, the cooling base 104 does not include the groove 810, and the sealing member 845 contacts the surface 809 in the region that overlaps the electrostatic chuck 102 and a portion of the cavity 211.

[0050] The sealing member 845 can secure the porous plug 844 within the cavity 211. For example, the sealing member 845 can exert a force on the surface 808 of the porous plug 844 and the surface 809 of the cooling base 104 so that the porous plug 844 is retained within the cavity 211.

[0051] Sealing member 845 includes surfaces 856 and 857. One or more of surfaces 856 and 857 may have a substantially curved shape. The substantially curved shape may be convex or concave. Additionally, one or more of surfaces 856 and 857 may have a substantially flat shape. Furthermore, bonding layer 204 may at least partially contact sealing member 845.

[0052] Figure 9 is a schematic cross-sectional view of a portion 201 of a substrate support pedestal 116 having a porous plug 944 and a sealing member 845 according to one or more embodiments. Figure 8 The sealing member 845 is described in more detail. Figure 8 As depicted, the cooling base 104 includes a groove 810 with which at least a portion of the sealing member 845 is positioned.

[0053] and Figure 8 Compared to the porous plug 844 of the embodiment of the present invention, the porous plug 944 includes a surface 908 extending into the gap 305 between the electrostatic chuck 102 and the cooling base 104. The diameter 931 of the portion of the porous plug 944 extending into the gap 305 is smaller than the diameter 930 of the portion of the porous plug 944 positioned within the cavity 211. The diameter 930 is greater than the diameter 832 of the opening 210. Alternatively, the diameter 930 is less than or equal to the diameter 832. In addition, the top surface 906 of the porous plug 944 contacts the surface 309 of the cavity 211. The porous plug 944 may have a chamfered edge along the surface 906, which is similar to Figure 3 The chamfered edge of the porous plug 244 is shown.

[0054] The sealing member 845 is positioned adjacent to the porous plug 944. For example, the sealing member 845 is positioned between the porous plug 944 and the cooling base 104. The sealing member 845 contacts the surface 307 of the electrostatic chuck 102, the surface 907 of the porous plug 944, and the surface 809 of the cooling base 104, thereby forming an axial seal between the electrostatic chuck 102 and the cooling base 104. The sealing member 845 can secure the porous plug 944 within the cavity 211. For example, the sealing member 845 can exert a force on the surface 907 of the porous plug 944 and the surface 809 of the cooling base 104, so that the porous plug 944 is retained within the cavity 211. In addition, the sealing member 845 can contact the surface 909 of the porous plug 944.

[0055] The sealing members and porous plugs described herein are suitable for use with a substrate support base to protect a bonding layer that bonds a cooling base to an electrostatic chuck from the effects of process gases. Advantageously, protecting the bonding layer from the effects of process gases reduces erosion of the bonding layer and maintains a substantially uniform temperature across the substrate. For example, a sealing member that is resistant to process gases can be used to form a radial seal and / or a vertical seal between the porous plugs of the electrostatic chuck. Such a sealing member prevents process gases from flowing into the gap between the electrostatic chuck and the cooling base and reduces erosion of the bonding layer. Thus, substantially uniform heat transfer between the cooling base and the electrostatic chuck and a uniform temperature across the substrate are maintained.

[0056] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the disclosure and its scope as defined by the appended claims.

Claims

1. An electrostatic chuck, comprising: A subject, comprising: a top surface; and cavity; an airflow channel formed between the top surface and a bottom surface of the cooling base, the airflow channel including the cavity and defined by a groove in the cooling base; and A porous plug is positioned within the cavity, wherein a sealing member is disposed in the recess and contacts a bottom surface of the porous plug, the sealing member being configured to form a seal between the porous plug and a bottom of the recess. 2 . The electrostatic chuck of claim 1 , wherein the sealing member contacts the body.

3. The electrostatic chuck of claim 1 , wherein the sealing member is positioned between the porous plug and the cooling base.

4. The electrostatic chuck of claim 1 , wherein the sealing member secures the porous plug within the cavity.

5. The electrostatic chuck of claim 1, wherein the sealing member is an O-ring or a cylindrical gasket.

6. The electrostatic chuck of claim 1, wherein the sealing member is one of: a fluoroelastomer material, a perfluoroelastomer material, and a high-purity ceramic.

7. The electrostatic chuck of claim 1 , wherein the sealing member is formed of a material applied in the form of a liquid, paste, or gel.

8. The electrostatic chuck of claim 1, wherein the porous plug has one of the following shapes: a T-shape and a cylindrical shape.

9. A substrate support base, comprising: an electrostatic chuck having a body including a cavity; a cooling base coupled to the electrostatic chuck via a bonding layer, the cooling base having a groove; an airflow channel formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base, the airflow channel including the cavity and defined by the groove; a porous plug positioned within the cavity; as well as A sealing member is positioned in the groove and contacts a bottom surface of the porous plug, and the sealing member is configured to form a seal between the porous plug and the bottom of the groove.

10. The substrate support pedestal of claim 9, wherein the sealing member contacts the body.

11. The substrate support pedestal of claim 9, wherein the sealing member is positioned between the porous plug and the cooling base.

12. The substrate support pedestal of claim 9, wherein the sealing member secures the porous plug in the cavity.

13. The substrate support pedestal of claim 9, wherein the cooling base comprises a groove, and the sealing member is positioned within the groove.

14. The substrate support pedestal of claim 9, wherein the porous plug has a T-shape.

15. The substrate support pedestal of claim 9, wherein the sealing member is one of: a fluoroelastomer material, a perfluoroelastomer material, and a high purity ceramic.

16. The substrate support pedestal of claim 9, wherein the porous plug has a cylindrical shape.

17. A process chamber, comprising: A chamber body having a processing space: an electrostatic chuck disposed in the processing volume, the electrostatic chuck having a top surface, a bottom surface, and a cavity, the top surface configured to support a substrate during processing; a cooling base coupled to the electrostatic chuck via a bonding layer, the cooling base having a groove; an air flow channel formed between the top surface of the electrostatic chuck and the bottom surface of the cooling base, the air flow channel passing through the cavity and defined by the groove; a porous plug positioned within the cavity; as well as A sealing member is positioned in the groove and contacts a bottom surface of the porous plug, and the sealing member is configured to form a seal between the porous plug and the bottom of the groove. The process chamber of claim 17 , wherein the sealing member contacts the body.

19. The process chamber of claim 17, wherein the sealing member is positioned between the porous plug and the cooling base.

20. The process chamber of claim 17, wherein the cooling base includes a groove, and the sealing member is positioned within the groove.

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