Semiconductor process equipment and temperature control method of heating base thereof

Abstract

The present invention provides a temperature control method for a heating base, comprising: providing a detection control voltage corresponding to the current temperature to a thyristor element, detecting the heating voltage provided by the thyristor element to the heating base and the power supply current between the thyristor element and the heating base, and determining the current resistance of the heating base based on the heating voltage and the power supply current. Comparing the current resistance with a predetermined resistance of the ceramic heating base at the current temperature, and when the difference between the current resistance and the predetermined resistance is not greater than a first preset difference threshold, controlling the thyristor element to output a heating voltage to the heating base using a temperature control method corresponding to the ceramic heating base. In the present invention, semiconductor process equipment can automatically determine whether the heating base is a ceramic heating base and control the heating voltage using a corresponding temperature control method, thereby eliminating the safety risk of operators misjudging the base type and improving the safety of semiconductor process equipment. The present invention also provides semiconductor process equipment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and in particular to a temperature control method of a heating base in semiconductor processing equipment and semiconductor processing equipment. Background Art

[0002] In the semiconductor field, a large number of processes require heating the wafer support base. Different base materials are required for different process temperatures, radio frequencies, and process requirements. The most commonly used ones are ceramic bases and metal bases. The heating functions of both ceramic and metal bases are achieved by the heating wire inside the base. The resistance of the metal base is basically fixed, but due to the special material of the resistance wire inside the ceramic base, the resistance of the ceramic base changes with the heating temperature. The software can configure the temperature control method of each base according to its different characteristics. The temperature control method of the metal base is to directly output the constant power set by the thermostat to the metal base, while the temperature control method of the ceramic base is to control the power output to the ceramic base according to the slope while limiting the maximum output.

[0003] Before the semiconductor process begins, the operator needs to identify the current base type and make the correct selection. If the wrong selection is made and the control method of the metal base is used for the ceramic base, excessive current will be generated in the ceramic base, causing damage to the base or protective devices. If the control method of the ceramic base is used for the metal base, the temperature of the metal base will not be able to meet the heating requirements, affecting the progress of the process. Summary of the Invention

[0004] The present invention aims to provide a temperature control method for a heating base in a semiconductor process equipment and a semiconductor process equipment. The temperature control method can automatically determine the type of the heating base and improve the safety of the semiconductor process equipment.

[0005] To achieve the above objectives, as one aspect of the present invention, a method for controlling the temperature of a heating base in semiconductor processing equipment is provided. The semiconductor processing equipment includes a heating base, a temperature controller, and a thyristor element. The temperature controller is configured to change a control voltage provided to the thyristor according to a target temperature and a current temperature of the heating base, thereby changing the heating voltage output by the thyristor to the heating base. The temperature control method includes:

[0006] providing a detection control voltage corresponding to the current temperature to the thyristor element, detecting a heating voltage provided by the thyristor element to the heating base and a supply current between the thyristor element and the heating base, and determining a current resistance of the heating base according to the heating voltage and the supply current;

[0007] Compare the current resistance with the predetermined resistance of the ceramic heating base at the current temperature. When the difference between the current resistance and the predetermined resistance is not greater than a first preset difference threshold, use a temperature control method corresponding to the ceramic heating base to control the thyristor element to output a heating voltage to the heating base.

[0008] Optionally, before providing the detection control voltage corresponding to the current temperature to the thyristor element, the temperature control method further includes:

[0009] determining a maximum heating voltage of the heating base according to a maximum heating current of the heating base and a predetermined resistance of the ceramic heating base at the current temperature;

[0010] The detection control voltage is calculated according to the maximum heating voltage of the heating base and the power supply voltage of the thyristor element.

[0011] Optionally, the heating voltage output by the thyristor to the heating base is positively correlated with the control voltage provided by the thermostat to the thyristor, and when the control voltage reaches a control voltage threshold, the heating voltage reaches the power supply voltage of the thyristor;

[0012] The detected control voltage is lower than the control voltage threshold multiplied by a ratio between a maximum heating voltage of the heating base and the power supply voltage.

[0013] Optionally, the detection control voltage is set to make the heating voltage 50% of the maximum heating voltage of the heating base.

[0014] Optionally, the temperature control method further includes:

[0015] When the difference between the current resistance of the heating base and the predetermined resistance is greater than the first preset difference threshold, comparing the current resistance of the heating base with a predetermined fixed resistance of the metal heating base;

[0016] When the difference between the current resistance of the heating base and the predetermined fixed resistance is not greater than a second preset difference threshold, controlling the heating voltage output by the thyristor to the heating base by adopting a temperature control method corresponding to the metal heating base;

[0017] When the difference between the current resistance of the heating base and the predetermined fixed resistance is greater than the second preset difference threshold, the heating base is controlled to stop heating and an error is reported.

[0018] Optionally, a ceramic control branch and a metal control branch are connected between the thermostat and the thyristor;

[0019] The method of controlling the heating voltage output by the thyristor to the heating base by adopting the temperature control method corresponding to the metal heating base includes: controlling the ceramic control branch to be disconnected and controlling the metal control branch to be connected;

[0020] The heating voltage output by the thyristor to the heating base is controlled by the temperature control method corresponding to the ceramic heating base, including: controlling the ceramic control branch to be turned on, controlling the metal control branch to be turned off, and adjusting the resistance of the ceramic control branch according to the current temperature.

[0021] Optionally, adjusting the resistance of the ceramic control branch according to the current temperature includes:

[0022] determining a predetermined temperature zone to which the current temperature belongs;

[0023] determining a maximum heating voltage of the heating base according to a maximum heating current of the heating base and a predetermined resistance of the ceramic heating base corresponding to a maximum temperature of a predetermined temperature zone to which the current temperature belongs;

[0024] determining a maximum heating voltage output ratio according to a ratio between the maximum heating voltage and the power supply voltage of the thyristor element;

[0025] The resistance of the ceramic control branch is determined according to the maximum heating voltage output ratio, and the resistance of the ceramic control branch decreases as the maximum heating voltage output ratio increases.

[0026] Optionally, the temperature control method further includes:

[0027] determining a theoretical heating voltage of the heating base according to a preset resistance of the heating base at a current temperature and the detected power supply current;

[0028] The theoretical heating voltage is compared with the detected heating voltage, and the resistance on the ceramic control branch is adjusted according to the comparison result, so that the difference between the theoretical heating voltage and the detected heating voltage is reduced.

[0029] Optionally, the first preset difference threshold is 10% of the predetermined resistance, and the second preset difference threshold is 5% of the predetermined fixed resistance.

[0030] As a second aspect of the present invention, a semiconductor process equipment is provided, comprising a controller, a heating base, a temperature controller and a thyristor element, wherein the temperature controller is used to change the control voltage provided to the thyristor according to the target temperature and the current temperature of the heating base so as to change the heating voltage output by the thyristor to the heating base, and the controller is used to execute the temperature control method described above.

[0031] In the temperature control method and semiconductor process equipment provided by the present invention, the control system can detect the heating voltage provided by the thyristor element to the heating base and the power supply current between the thyristor element and the heating base in the semiconductor process, and determine the current resistance of the heating base based on the heating voltage and the power supply current, thereby comparing the current resistance of the heating base with the predetermined resistance of the ceramic heating base at the current temperature, and then automatically determine whether the heating base is a ceramic heating base based on the difference between the current resistance of the heating base and the predetermined resistance of the ceramic heating base. When the heating base is determined to be a ceramic heating base, the temperature control method corresponding to the ceramic heating base is automatically used to control the heating voltage output by the thyristor element to the heating base, thereby eliminating the safety risk of equipment damage caused by the operator misjudging the base type, and improving the safety of semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the following detailed description, they are used to explain the present invention but do not constitute a limitation of the present invention. In the accompanying drawings:

[0033] Figure 1 This is a schematic diagram of the principle of a control system controlling a thyristor element in a temperature control method provided by an embodiment of the present invention;

[0034] Figure 2 1 is a flow chart of a temperature control method provided by an embodiment of the present invention;

[0035] Figure 3 It is a flow chart of a temperature control method provided by another embodiment of the present invention. DETAILED DESCRIPTION

[0036] The following describes the specific embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention and are not intended to limit the present invention.

[0037] In order to solve the above technical problems and eliminate the safety risk of equipment damage caused by operators misjudging the type of susceptor, as one aspect of the present invention, a temperature control method for a heating susceptor in a semiconductor process equipment is provided, such as Figure 1 As shown, the semiconductor process equipment includes a heating base 10, a temperature controller 20 and a thyristor element 30. The temperature controller 20 is used to change the control voltage provided to the thyristor element 30 according to the target temperature and the current temperature of the heating base 10, so as to change the heating voltage output by the thyristor element 30 to the heating base 10. Figure 2 As shown, the temperature control method includes:

[0038] Step S1: Provide a detection control voltage U corresponding to the current temperature to the thyristor element 30, and detect the heating voltage U1 provided by the thyristor element 30 to the heating base 10 and the power supply current I between the thyristor element 30 and the heating base 10 (e.g. Figure 1 、 Figure 2 In the state shown, the control system 40 provides a fixed power to the thyristor element 30 with a fixed detection control voltage U, and detects the feedback heating voltage and supply current), and determines the current resistance R1 of the heating base 10 according to the heating voltage U1 and the supply current I (R1=U1 / I);

[0039] Step S2: Compare the current resistance R1 of the heating base 10 with the predetermined resistance R1 of the ceramic heating base at the current temperature. x , when the current resistance R1 of the heating base 10 is equal to the predetermined resistance R x When the difference between the values ​​of φ and φ is not greater than a first preset difference threshold, the thyristor element 30 is controlled to output a heating voltage to the heating base 10 using a temperature control method corresponding to the ceramic heating base.

[0040] In the present invention, the semiconductor process equipment (control system 40) can detect the heating voltage U1 provided by the thyristor element 30 to the heating base 10 and the supply current I between the thyristor element 30 and the heating base 10 in the semiconductor process, and determine the current resistance R1 of the heating base 10 according to the heating voltage U1 and the supply current I, thereby comparing the current resistance R1 of the heating base 10 with the predetermined resistance R of the ceramic heating base at the current temperature. x The size between the current resistance R1 of the heating base 10 and the predetermined resistance R x The difference between the two values ​​automatically determines whether the heating base 10 is a ceramic heating base. When the heating base 10 is determined to be a ceramic heating base, the temperature control method corresponding to the ceramic heating base is automatically used to control the heating voltage output by the thyristor element 30 to the heating base 10, thereby eliminating the safety risk of equipment damage caused by the operator's misjudgment of the base type, and improving the safety of semiconductor process equipment.

[0041] The embodiment of the present invention does not specifically limit the size of the first preset difference threshold, as long as the size of the first preset difference threshold can reflect the normal range of the error. For example, as an optional embodiment of the present invention, the first preset difference threshold can be a predetermined resistance R x That is, when the current resistance R1 of the heating base 10 satisfies R x *90%≤R1≤R x When the value is 110%, it is determined that the heating base 10 is a ceramic heating base.

[0042] As an optional embodiment of the present invention, the control system 40 of the semiconductor process equipment may pre-store the temperature T of the heating base 10 and the predetermined resistance R of the heating base 10. x The relationship table is configured according to the data of the base used by the machine. The table format is shown in Table 1-1 below:

[0043] Table 1-1

[0044]

[0045] Among them, the predetermined resistance R of the metal heating base x The predetermined resistance R of the ceramic heating base does not change with the temperature of the base. x With temperature T1~T n+n Changes, marked as X1~X n+n .

[0046] In order to simplify the steps of confirming the resistance of the ceramic heating base and improve the judgment efficiency, as a preferred embodiment of the present invention, the predetermined resistance R x The step S2 specifically compares the current resistance R1 of the heating base 10 with the predetermined resistance R corresponding to the predetermined temperature zone to which the current temperature of the ceramic heating base belongs. x For example, when the current temperature is in the predetermined temperature zone T n+1 ~T n+2 When the ceramic heating base has a predetermined resistance R x Take X n ; When the current temperature is in the predetermined temperature zone T n+2 ~T n+3 When the ceramic heating base has a predetermined resistance R x Take X n+1 , and so on.

[0047] In order to further improve the safety of semiconductor process equipment, as a preferred embodiment of the present invention, Figure 3 As shown, the temperature control method further includes:

[0048] Step S3: When the current resistance R1 of the heating base 10 is equal to the predetermined resistance R x When the difference between the current resistance R1 of the heating base 10 and the predetermined fixed resistance Y is greater than a first preset difference threshold, the current resistance R1 of the heating base 10 is compared with the predetermined fixed resistance Y of the metal heating base. When the difference between the current resistance R1 of the heating base 10 and the predetermined fixed resistance Y is not greater than a second preset difference threshold, the heating voltage output by the thyristor element 30 to the heating base 10 is controlled using the temperature control method corresponding to the metal heating base. When the difference between the current resistance R1 of the heating base 10 and the predetermined fixed resistance Y is greater than the second preset difference threshold, the heating base 10 is controlled to stop heating and an error is reported.

[0049] In an embodiment of the present invention, the control system 40 can also further compare the current resistance R1 of the heating base 10 with the resistance Y of the metal heating base when it is determined that the heating base 10 is not a ceramic heating base, and when there is a difference between the current resistance R1 of the heating base 10 and the resistance Y of the metal heating base (that is, the difference is too large), the heating base 10 is controlled to stop heating and prompt an error, thereby notifying the operator to manually confirm the base type in time and check whether there is a problem with the wiring from the power supply line to the heating base 10, further improving the safety of semiconductor process equipment.

[0050] The embodiment of the present invention does not impose any specific limitation on the size of the second preset difference threshold, as long as the size of the second preset difference threshold can reflect the normal range of error. For example, as an optional embodiment of the present invention, the second preset difference threshold can be 5% of the predetermined fixed resistance Y. That is, when the current resistance R1 of the heating base 10 satisfies Y*95%≤R1≤Y*105%, the heating base 10 is determined to be a metal heating base.

[0051] The embodiment of the present invention does not specifically limit how the semiconductor process equipment switches between the temperature control mode corresponding to the metal heating base and the temperature control mode corresponding to the ceramic heating base. For example, as an optional embodiment of the present invention, Figure 2 As shown, a ceramic control branch and a metal control branch are connected between the temperature controller 20 and the thyristor element 30, and the heating voltage output by the thyristor element 30 to the heating base 10 is controlled by a temperature control method corresponding to the metal heating base, including: controlling the ceramic control branch to be disconnected and controlling the metal control branch to be turned on;

[0052] The heating voltage output by the thyristor element 30 to the heating base 10 is controlled by the temperature control method corresponding to the ceramic heating base, including: controlling the ceramic control branch to be turned on, controlling the metal control branch to be turned off, and adjusting the resistance of the ceramic control branch according to the current temperature of the heating base 10.

[0053] That is, after determining that the heating base 10 is a metal heating base, the temperature controller 20 directly provides the control voltage output by the PID algorithm to the thyristor element 30 through the metal control branch. After determining that the heating base 10 is a ceramic heating base, the temperature controller 20 is connected to the thyristor element 30 through the ceramic control branch. The resistance on the ceramic control branch changes with the current temperature of the heating base 10, thereby realizing the control voltage output to the thyristor element 30 according to the temperature adjustment.

[0054] The embodiment of the present invention does not specifically limit how to implement switching between branches. For example, as an optional implementation of the present invention, Figure 2As shown, a switch K is provided on the metal control branch, and a switch K' is provided on the ceramic control branch. When the heating base 10 is determined to be a metal heating base, the switch K on the metal control branch is closed, and the switch K' on the ceramic control branch is opened, so that the temperature controller 20 can directly provide a control voltage to the thyristor element 30 through the metal control branch. When the heating base 10 is determined to be a ceramic heating base, the switch K' on the ceramic control branch is closed, and the switch K on the metal control branch is opened, so that the control voltage output to the thyristor element 30 can be adjusted according to the temperature.

[0055] To further improve the safety of semiconductor process equipment, as a preferred embodiment of the present invention, before step S1, the temperature control method further includes:

[0056] Step S01: According to the maximum heating current I of the heating base 10 X and the predetermined resistance R of the ceramic heating base at the current temperature x Determine the maximum heating voltage U of the heating base 10 x ;

[0057] Step S02: According to the maximum heating voltage U of the heating base 10 x The detection control voltage U is calculated based on the supply voltage of the thyristor element 30 so that the heating voltage is lower than the maximum heating voltage U of the heating base 10. x .

[0058] In the embodiment of the present invention, the control system 40 first determines the maximum heating current I of the heating base 10 before providing the detection control voltage U to the thyristor element 30. X and the predetermined resistance R of the heating base 10 at the current temperature x Determine the maximum heating voltage U of the heating base 10 x (U x =I X *R x ) to avoid the detection control voltage U provided to the thyristor element 30 in step S1 being too large, causing the heating voltage output by the thyristor element 30 to the heating base 10 to be too large, resulting in the power supply circuit of the heating base 10 being burned, further improving the safety of the semiconductor process equipment.

[0059] Specifically, the heating voltage output by the thyristor element 30 to the heating base 10 is positively correlated with the control voltage provided by the thermostat 20 to the thyristor element 30. When the control voltage U reaches the control voltage threshold, the heating voltage reaches the supply voltage of the thyristor element 30. For example, when the control voltage threshold of the control voltage U is 10V, as the control voltage U varies between 0 and 10V, the heating voltage output by the thyristor element 30 to the heating base 10 also varies monotonically between zero and the supply voltage of the thyristor element 30. When the control voltage reaches 10V, the heating voltage output by the thyristor element 30 to the heating base 10 also reaches (approximately) the supply voltage of the thyristor element 30.

[0060] In this case, the detection control voltage U needs to be set to: the detection control voltage U is lower than the control voltage threshold (eg, 10V) multiplied by the maximum heating voltage U of the heating base 10 x The ratio of the supply voltage.

[0061] When the control voltage threshold is 10V, the relationship can be expressed as U≤[(U x / supply voltage)]*10 (unit: V).

[0062] The embodiment of the present invention does not impose any specific restrictions on the final value of the control voltage U, as long as the value of the control voltage U can ensure the normal detection of the heating voltage U1. For example, as an optional embodiment of the present invention, the detection control voltage U is set to make the heating voltage U1 50% of the maximum heating voltage of the heating base 10. When the control voltage threshold is 10V, the relationship can be expressed as U=[(U x / supply voltage) / 2]*10 (unit: V).

[0063] As an optional embodiment of the present invention, adjusting the resistance of the ceramic control branch according to the current temperature of the heating base 10 includes:

[0064] Determining the predetermined temperature zone to which the current temperature of the heating base 10 belongs;

[0065] According to the maximum heating current I of the heating base 10 X and the predetermined resistance R of the heating base 10 corresponding to the highest temperature of the predetermined temperature zone to which the current temperature belongs x Determining the maximum heating voltage of the heating base 10;

[0066] The maximum heating voltage output ratio P is determined according to the ratio between the maximum heating voltage and the supply voltage of the thyristor element 30. T ;

[0067] According to the maximum heating voltage output ratio P T Determine the resistance R on the ceramic control branch L', the resistance on the ceramic control branch decreases as the maximum heating voltage output ratio increases.

[0068] Specifically, if Figure 2 As shown, an adjustable resistor is provided on the ceramic control branch, and the semiconductor process equipment further includes a motor M. The control system 40 controls the motor M to adjust the resistance value of the adjustable resistor so that the resistance R of the adjustable resistor is L 'From 0 to the maximum resistance R L When the adjustable resistor R L ' is zero, the heating voltage provided by the thyristor element 30 to the heating base 10 is the supply voltage (ie, the heating voltage output ratio P T is 100%), when the adjustable resistor R L ' is the maximum resistance R L When the heating voltage provided by the thyristor element 30 to the heating base 10 is zero (ie the heating voltage output ratio P T is 0%), expressed as: R L '=(1-P T )*R L .

[0069] In order to further improve the safety of semiconductor process equipment, as a preferred embodiment of the present invention, the maximum heating voltage output ratio P T The size is the ratio of the maximum heating voltage to the power supply voltage of the thyristor element 30 multiplied by the preset ratio (the preset ratio is less than 1), thereby ensuring that the maximum heating voltage output ratio P T After the heating voltage is output to the heating base 10, the current in the heating base 10 will not exceed the maximum current I X Optionally, the preset ratio is 90%, that is, the maximum heating voltage output ratio P T =(maximum heating voltage / supply voltage)*90%.

[0070] To simplify the calculation, as a preferred embodiment of the present invention, the temperature points T1 to Tn+n can be set according to the temperature at which the resistance of the heating base 10 produces a constant change, that is, the difference between the resistance values ​​of the heating base 10 corresponding to any two adjacent temperature points in Table 1-1 (that is, the length of the predetermined temperature zone) is equal. For example, X n+1 -X n =X n+2 -X n+1 =X n+3 -X n+2 =RΩ. As an optional embodiment of the present invention, the constant resistance change RΩ may be 2Ω (ohm).

[0071] For example, when there are three temperature points (temperature zones) Ta, Tb, and Tc in the temperature range, the resistance values ​​Ra, Rb, and Rc corresponding to each temperature point (temperature zone) can be obtained from Table 1-1, and the maximum carrying current I of the ceramic base can be used to calculate the resistance value. X Calculate the maximum heating voltage Ua=I corresponding to the three temperature zones X *Ra、Ub=I X *Rb、Uc=I X *Rc.

[0072] Then calculate the maximum heating voltage output ratio PT according to the maximum heating voltage corresponding to each temperature zone:

[0073] When the heating base temperature is ≤Ta, the maximum heating voltage output ratio P T a=(Ua / supply voltage)*90%;

[0074] When Ta<heating base temperature≤Tb, the maximum heating voltage output ratio P T b=(Ub / supply voltage)*90%;

[0075] When Tb<heating base temperature≤Tc, the maximum heating voltage output ratio P T c = (Uc / supply voltage) * 90%.

[0076] Finally, according to the above formula R L '=(1-P T )*R L Calculate the target resistance R of the adjustable resistor L ', the control system 40 determines the feed rate of the motor according to the adjustment amount required by the adjustable resistor, and controls the motor to adjust the resistance value of the adjustable resistor, thereby changing the maximum heating voltage output ratio P T , ensuring that the heating voltage is within a safe range and achieving safe and reliable heating.

[0077] In order to improve the accuracy of controlling the heating power of the heating base 10, as a preferred embodiment of the present invention, the temperature control method further includes:

[0078] The predetermined resistance R of the heating base 10 is determined according to the current temperature. x The theoretical heating voltage V of the heating base 10 is determined by the detected power supply current I t (R x *I=V t );

[0079] Comparison of theoretical heating voltage V t The heating voltage V is detected and the resistance of the ceramic control branch is adjusted according to the comparison result to make the theoretical heating voltage V t The difference between the detected heating voltage V decreases.

[0080] In the embodiment of the present invention, the control system 40 can also control the predetermined resistance R of the heating base 10 during the heating process. x The theoretical heating voltage V calculated from the supply current I t Compared with the detected heating voltage V, when the theoretical heating voltage V t If there is a deviation between the actual load of the circuit and the predetermined resistance R obtained by the previous independent test of the heating base 10, it means that the load of the actual circuit is different from the predetermined resistance R obtained by the previous independent test of the heating base 10. x There are differences between them, and the actual power supply voltage of the heating base 10 cannot meet the demand, so the resistance value of the adjustable resistor R L 'Fine adjustment is performed to eliminate the deviation, thereby further improving the accuracy of controlling the heating power of the heating base 10.

[0081] As a second aspect of the present invention, a semiconductor process equipment is provided, including a heating base 10, a temperature controller 20 and a thyristor element 30. The temperature controller 20 is used to change the control voltage provided to the thyristor element 30 according to the target temperature and the current temperature of the heating base 10, so as to change the heating voltage output by the thyristor element 30 to the heating base 10. The semiconductor process equipment can implement the temperature control method provided in the embodiment of the present invention.

[0082] In the semiconductor process equipment provided by the present invention, the control system 40 can detect the heating voltage U1 provided by the thyristor element 30 to the heating base 10 and the supply current I between the thyristor element 30 and the heating base 10 during the semiconductor process, and determine the current resistance R1 of the heating base 10 based on the heating voltage U1 and the supply current I, thereby comparing the current resistance R1 of the heating base 10 with the predetermined resistance R of the ceramic heating base at the current temperature. x The size between the current resistance R1 of the heating base 10 and the predetermined resistance R x The difference between the two values ​​automatically determines whether the heating base 10 is a ceramic heating base. When the heating base 10 is determined to be a ceramic heating base, the temperature control method corresponding to the ceramic heating base is automatically used to control the heating voltage output by the thyristor element 30 to the heating base 10, thereby eliminating the safety risk of equipment damage caused by the operator's misjudgment of the base type, and improving the safety of semiconductor process equipment.

[0083] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A method for controlling the temperature of a heating base in a semiconductor process equipment, characterized in that: The semiconductor process equipment includes a heating base, a temperature controller, and a thyristor element. The temperature controller is used to change the control voltage provided to the thyristor element according to the target temperature and the current temperature of the heating base, and switch between a temperature control mode corresponding to a ceramic heating base and a temperature control mode corresponding to a metal heating base to change the heating voltage output by the thyristor element to the heating base. The temperature control method includes: providing a detection control voltage corresponding to the current temperature to the thyristor element, detecting a heating voltage provided by the thyristor element to the heating base and a supply current between the thyristor element and the heating base, and determining a current resistance of the heating base according to the heating voltage and the supply current; Compare the current resistance with the predetermined resistance of the ceramic heating base at the current temperature. When the difference between the current resistance and the predetermined resistance is not greater than a first preset difference threshold, use the temperature control method corresponding to the ceramic heating base to control the thyristor element to output a heating voltage to the heating base.

2. The temperature control method according to claim 1, characterized in that: Before providing the detection control voltage corresponding to the current temperature to the thyristor element, the temperature control method further includes: determining a maximum heating voltage of the heating base according to a maximum heating current of the heating base and a predetermined resistance of the ceramic heating base at the current temperature; The detection control voltage is calculated according to the maximum heating voltage of the heating base and the power supply voltage of the thyristor element.

3. The temperature control method according to claim 2, characterized in that: The heating voltage output by the thyristor element to the heating base is positively correlated with the control voltage provided by the temperature controller to the thyristor element, and when the control voltage reaches a control voltage threshold, the heating voltage reaches the power supply voltage of the thyristor element; The detected control voltage is lower than the control voltage threshold multiplied by a ratio between a maximum heating voltage of the heating base and the power supply voltage.

4. The temperature control method according to claim 3, characterized in that: The detection control voltage is set so that the heating voltage is 50% of the maximum heating voltage of the heating base.

5. The temperature control method according to claim 1, wherein: The temperature control method further comprises: When the difference between the current resistance of the heating base and the predetermined resistance is greater than the first preset difference threshold, comparing the current resistance of the heating base with a predetermined fixed resistance of the metal heating base; When the difference between the current resistance of the heating base and the predetermined fixed resistance is not greater than a second preset difference threshold, controlling the heating voltage output by the thyristor element to the heating base by adopting the temperature control method corresponding to the metal heating base; When the difference between the current resistance of the heating base and the predetermined fixed resistance is greater than the second preset difference threshold, the heating base is controlled to stop heating and an error is reported.

6. The temperature control method according to claim 5, characterized in that: A ceramic control branch and a metal control branch are connected between the temperature controller and the thyristor element; The method of controlling the heating voltage outputted by the thyristor element to the heating base by adopting the temperature control method corresponding to the metal heating base includes: controlling the ceramic control branch to be disconnected and controlling the metal control branch to be connected; The temperature control method corresponding to the ceramic heating base is used to control the heating voltage output by the thyristor element to the heating base, including: controlling the ceramic control branch to be turned on, controlling the metal control branch to be turned off, and adjusting the resistance on the ceramic control branch according to the current temperature.

7. The temperature control method according to claim 6, characterized in that: The adjusting the resistance of the ceramic control branch according to the current temperature includes: determining a predetermined temperature zone to which the current temperature belongs; determining a maximum heating voltage of the heating base according to a maximum heating current of the heating base and a predetermined resistance of the ceramic heating base corresponding to a maximum temperature of a predetermined temperature zone to which the current temperature belongs; determining a maximum heating voltage output ratio according to a ratio between the maximum heating voltage and the power supply voltage of the thyristor element; The resistance of the ceramic control branch is determined according to the maximum heating voltage output ratio, and the resistance of the ceramic control branch decreases as the maximum heating voltage output ratio increases.

8. The temperature control method according to claim 7, characterized in that: The temperature control method further comprises: determining a theoretical heating voltage of the heating base according to a predetermined resistance of the heating base at a current temperature and the detected power supply current; The theoretical heating voltage is compared with the detected heating voltage, and the resistance on the ceramic control branch is adjusted according to the comparison result, so that the difference between the theoretical heating voltage and the detected heating voltage is reduced.

9. The temperature control method according to claim 1 or 5, characterized in that: The first preset difference threshold is 10% of the predetermined resistance.

10. The temperature control method according to claim 5, characterized in that: The second preset difference threshold is 5% of the predetermined fixed resistance.

11. A semiconductor process equipment, characterized in that: The invention comprises a controller, a heating base, a temperature controller and a thyristor element, wherein the temperature controller is used to change the control voltage provided to the thyristor element according to the target temperature and the current temperature of the heating base, so as to change the heating voltage output by the thyristor element to the heating base, and the controller is used to execute the temperature control method described in any one of claims 1 to 10.

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