Image sensing device

Abstract

An image sensing device includes: a semiconductor substrate configured to include a pixel region including a plurality of unit pixels and a peripheral region located outside the pixel region; a plurality of microlenses disposed above the semiconductor substrate in the pixel region; a structural reinforcement layer disposed above the semiconductor substrate in the peripheral region; and a lens covering layer configured to cover at least a part of the structural reinforcement layer and the microlenses. The structural reinforcement layer includes a plurality of fingers, each finger being configured to have a rounded upper end in a vertical direction and extending laterally toward the pixel region to have a predetermined length. The fingers are arranged continuously and connected to each other in a lateral direction, and side surfaces of the fingers are in contact with side surfaces of adjacent fingers.

Description

Technical Field

[0001] The technologies and implementations disclosed in this patent document generally relate to image sensing devices. Background Art

[0002] Image sensors are used in electronic devices to convert optical images into electrical signals. With the latest developments in the automotive, medical, computer, and communication industries, there is an increasing demand for highly integrated and higher-performance image sensors in various devices such as digital cameras, portable video cameras, personal communication systems (PCS), video game consoles, surveillance cameras, medical micro cameras, robots, etc. Summary of the Invention

[0003] Embodiments of the disclosed technology relate to an image sensing device that includes a lens covering layer that is not easily peeled off, thereby preventing a flare phenomenon that would occur in the lens layer if the lens covering layer had been peeled off.

[0004] In some embodiments of the disclosed technology, an image sensing device includes a reinforcement structure to prevent damage to a light-shielding layer located below the lens layer even if the lens layer is damaged during an etching process for patterning the lens covering layer.

[0005] According to an embodiment of the disclosed technology, an image sensing device may include: a semiconductor substrate configured to include a pixel region and a peripheral region, the pixel region including a plurality of unit pixels, the peripheral region being located outside the pixel region; a plurality of microlenses disposed above the semiconductor substrate in the pixel region; a structural reinforcement layer disposed above the semiconductor substrate in the peripheral region; and a lens covering layer configured to cover at least a portion of the structural reinforcement layer and the plurality of microlenses. The structural reinforcement layer may include: a plurality of fingers, each finger being configured to have a rounded upper end in a vertical direction and extending laterally toward the pixel region to have a predetermined length. The plurality of fingers may be continuously arranged and connected to each other in a lateral direction, and side surfaces of the fingers are in contact with side surfaces of adjacent fingers.

[0006] According to another embodiment of the disclosed technology, an image sensing device may include: a planarization layer formed over a lower structure including sensor pixels configured to detect incident light to output an electrical signal indicative of an image of the incident light; a plurality of microlenses disposed over the planarization layer to converge incident light onto the sensor pixels; a structural reinforcement layer disposed over the planarization layer to surround the plurality of microlenses; and a lens cover layer disposed over the plurality of microlenses and the structural reinforcement layer. The structural reinforcement layer may include a plurality of fingers, each finger having a body portion that has a curvature in a short-axis direction and extends to a predetermined length without a curvature in a long-axis direction perpendicular to the short-axis direction. The plurality of fingers may be continuously arranged adjacent to each other.

[0007] It should be understood that the above general description and the following detailed description of the disclosed technology are both illustrative and explanatory and are intended to provide further explanation of the claimed disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The above features and other features and advantageous aspects of the disclosed technology will become apparent when the following detailed description is considered in conjunction with the accompanying drawings.

[0009] Figure 1 is a schematic diagram showing an example layout of an image sensing device based on some implementations of the disclosed technology.

[0010] Figure 2 is a cross-sectional view showing an example of an image sensing device taken along the line X1-X1' shown in Figure 1 based on some implementations of the disclosed technology.

[0011] Figure 3A is a cross-sectional view showing an example of an image sensing device taken along the line Y1-Y1' shown in Figure 1 based on some implementations of the disclosed technology.

[0012] Figure 3B is a cross-sectional view showing an example of an image sensing device taken along the line Y2-Y2' shown in Figure 1 based on some implementations of the disclosed technology.

[0013] Figure 4 is a schematic diagram showing classification of a region of each finger in an anti-peeling structure into a body portion and an edge portion based on some implementations of the disclosed technology.

[0014] Figure 5A is a schematic diagram showing potential problems that will occur when there are dead zones between fingers of an anti-peeling structure based on some implementations of the disclosed technology.

[0015] Figure 5B is a cross-sectional view showing an example of an image sensing device taken along the line Y3 - Y3' shown, based on some implementations of the disclosed technology. Figure 5A shown.

[0016] Figure 6 is a schematic diagram showing an example of a problem that occurs when an anti-peeling structure is formed in a hemispherical shape such as a microlens, based on some implementations of the disclosed technology.

[0017] Figures 7A to 7D is a cross-sectional view showing an example of a process for forming the Figure 2 structure shown, based on some implementations of the disclosed technology.

[0018] Figure 8 is a schematic diagram showing examples of a microlens pattern and an anti-peeling pattern temporarily formed in a process for forming a microlens and an anti-peeling structure, based on some implementations of the disclosed technology.

[0019] Figure 9 is a cross-sectional view showing an example of an image sensing device based on some other implementations of the disclosed technology. Detailed Description

[0020] This patent document provides implementations and examples of an image sensing device. Some implementations of the disclosed technology propose a design for an image sensing device that can prevent the lens cover layer from being easily peeled off, thereby preventing the flicker phenomenon that would occur in the lens layer if the lens cover layer has been peeled off. The disclosed technology can be implemented in some embodiments to provide an image sensing device that includes a reinforcing structure to prevent damage to the light-shielding layer located below the lens layer even if the lens layer is damaged during the etching process for patterning the lens cover layer.

[0021] Now, specific embodiments will be described in detail, and examples of specific embodiments are shown in the drawings. As much as possible, the same reference numerals will be used throughout the drawings to refer to the same or similar components. In the following description, detailed descriptions of related known configurations or functions incorporated herein will be omitted to avoid obscuring the subject matter.

[0022] Figure 1 is a schematic diagram showing an example layout of an image sensing device based on some implementations of the disclosed technology.

[0023] Referring to Figure 1 , the image sensing device may include a pixel region 100 and a peripheral region 200.

[0024] The pixel region 100 may be located on the image sensing device and be included at the center of the image sensing device. The pixel region 100 may include a plurality of unit pixels (PX) arranged in rows and columns in a two-dimensional (2D) matrix array. For example, a plurality of unit pixels (PX) may be arranged continuously in a first direction and a second direction perpendicular to the first direction. The plurality of unit pixels (PX) may include red (R) color filters, green (G) color filters, and blue (B) color filters, which may be arranged in a Bayer pattern. The plurality of unit pixels (PX) may convert incident light received through the color filters into an electrical signal corresponding to the incident light, thereby generating a pixel signal using the electrical signal.

[0025] The pixel region 100 may include a plurality of microlenses (ML) arranged above the color filters to converge incident light onto the corresponding color filters. In some implementations, each microlens may be arranged above the corresponding unit pixel (PX). A lens cover layer 140 may be provided above the microlenses (ML) to protect the microlenses (ML) while preventing a scintillation phenomenon associated with the microlenses (ML). The lens cover layer 140 may be formed to cover the entire pixel region 100 and extend to the peripheral region 200. The lens cover layer 140 may include a low temperature oxide (LTO) film.

[0026] The peripheral region 200 may be located outside the pixel region 100. The peripheral region 200 may be formed to surround the pixel region 100. The peripheral region 200 may include a light shielding layer configured to shield the semiconductor substrate from light that would otherwise be incident on the semiconductor substrate. The light shielding layer may be provided between the semiconductor substrate and the lens layer 130. The peripheral region 200 may include an optically black pixel (OBP) region to generate a pixel signal in a dark state. For example, an optically black pixel refers to a pixel where light incident on the image sensor is blocked. The peripheral region 200 may include a logic circuit region including logic gates configured to receive, for example, pixel signals generated by the unit pixels (PX) and process the received pixel signals. If the image sensing device is formed by stacking a plurality of semiconductor layers or substrates, the logic region may be provided below the pixel region 100 as needed. Additionally, the peripheral region 200 may include a pad region as needed.

[0027] In some implementations, the peripheral region 200 may include microlenses arranged continuously starting from the pixel region 100. In some implementations, the microlenses arranged in the peripheral region 200 have the same structure as the microlenses (ML) in the pixel region 100. In some implementations, the microlenses arranged in the peripheral region 200 may include additional microlenses that do not perform the functions of the microlenses (ML) in the pixel region 100. In this regard, each microlens formed in the peripheral region 200 may be referred to as a dummy microlens (DML) or an additional microlens.

[0028] In some implementations of the disclosed technology, the peripheral region 200 may include a reinforcement structure to prevent damage to the light-shielding layer. In one example, the peripheral region 200 may include a three-dimensional (3D) structural reinforcement layer or an anti-peeling structure 136 to provide structural reinforcement at the light-shielding layer, thereby preventing damage to the light-shielding layer while preventing the lens cover layer 140 from peeling off. In some implementations, the anti-peeling structure 136 may be formed in an annular shape surrounding the microlenses ML and DML. For example, the anti-peeling structure 136 may include a plurality of finger-like structures. In the vertical cross-section in the short-axis direction of each finger-like structure included in the anti-peeling structure 136, the upper end of the finger-like structure may be rounded to have a curvature as in the microlens, and the rounded upper end may extend in the long-axis direction to a predetermined length. The anti-peeling structure 136 may include such finger-like structures that are arranged continuously and connected to each other such that their side surfaces are in contact with each other, thereby forming an annular shape surrounding the microlenses ML and DML. In this patent document, the word "finger" may be used to indicate the finger-like structure in the anti-peeling structure 136.

[0029] The anti-peeling structure 136 may be formed in the lens layer 130. In some implementations, the anti-peeling structure 136 may be formed in the peripheral region 200. In the lens layer 130, the anti-peeling structure 136 may be formed at the edge region of the lens cover layer 140.

[0030] Figure 2 is a cross-sectional view showing an example of an image sensing device taken along the Figure 1 line X1-X1' shown based on some implementations of the disclosed technology. Figure 3A is a cross-sectional view showing an example of an image sensing device taken along the Figure 1 line Y1-Y1' shown based on some implementations of the disclosed technology. Figure 3B is a cross-sectional view showing an example of an image sensing device taken along the Figure 1 line Y2-Y2' shown based on some implementations of the disclosed technology.

[0031] The semiconductor substrate 10 may include a first surface and a second surface facing each other. The semiconductor substrate 10 may include a single crystal material. In some implementations, the semiconductor substrate 10 may include silicon and / or silicon-containing materials. The semiconductor substrate 10 may include a pixel region 100 and a peripheral region 200. The pixel region 100 may include a plurality of photoelectric conversion elements 12 corresponding to respective unit pixels (PX). The photoelectric conversion elements 12 may convert incident light into an electrical signal by performing photoelectric conversion of the incident light. Each photoelectric conversion element 12 may include a photodiode.

[0032] A light-shielding layer 110, a color filter layer 120, and a lens layer 130 may be sequentially formed above the first surface of the semiconductor substrate 10.

[0033] The light-shielding layer 110 may include a material layer configured to block incident light. For example, the light-shielding layer 110 may include a metal layer such as tungsten (W). In the pixel region 100, the light-shielding layer 110 may be formed to include a grid shape of rows and columns disposed between adjacent color filters R, G, and B, thereby preventing crosstalk between adjacent color filters. In the peripheral region 200, the light-shielding layer 110 may be formed to cover the entire peripheral region 200, thereby shielding the semiconductor substrate 10 of the peripheral region 200 from light that would otherwise be incident thereon.

[0034] The color filter layer 120 may be formed in the pixel region 100 and the peripheral region 200. In the pixel region 100, the color filter layer 120 may include a plurality of color filters (e.g., R / G / B color filters), each color filter being formed to selectively transmit visible light of a specific wavelength while blocking light of other wavelengths. For example, the color filter layer 120 may include a plurality of red color filters (R), a plurality of green color filters (G), and a plurality of blue color filters (B). Each red color filter (R) may transmit only light in the red wavelength region of visible light. Each green color filter (G) may transmit only light in the green wavelength region of visible light. Each blue color filter (B) may transmit only light in the blue wavelength region of visible light. The color filters (e.g., RGB color filters) may be formed per unit pixel (PX). The red color filters (R), green color filters (G), and blue color filters (B) may be arranged in a Bayer pattern. In the peripheral region 200, the color filter layer 120 may be formed in such a way that one of the RGB color filters completely covers the light-shielding layer 110.

[0035] The color filter layer 120 may include an organic polymer material containing a red pigment, a green pigment, or a blue pigment. In some implementations, the color filter layer 120 may include a photoresist material.

[0036] The lens layer 130 may be formed above the color filter layer 120 in the pixel region 100. In some implementations, the lens layer 130 may also be formed above the color filter layer 120 in the peripheral region 200. The lens layer 130 may include an outer coating 132, a plurality of microlenses (ML, DML) 134, and an anti-peeling structure 136. In some implementations, the outer coating 132, the microlenses (ML, DML) 134, and the anti-peeling structure 136 may be formed of the same material. In some implementations, the anti-peeling structure 136 may be formed of a material different from that of the outer coating 132 and the microlenses (ML, DML) 134.

[0037] The outer coating 132 may be formed above the color filter layer 120 in the pixel region 100 and the peripheral region 200. The outer coating 132 may be used as a planarization layer to reduce / minimize the height difference caused by the color filter layer 120. The microlenses (ML, DML) 134 and the anti-peeling structure 136 may be formed above the outer coating 132.

[0038] In some implementations, each microlens 134 may be formed in a hemispherical shape. In some implementations, the microlenses 134 may be formed in the pixel region 100 and may extend to the peripheral region 200. In the following description, in order to distinguish the microlenses formed in the pixel region 100 from other microlenses formed in the peripheral region 200, the microlenses formed in the peripheral region 200 are referred to as dummy microlenses (DML). The microlenses (ML) may be formed in the pixel region 100 in one-to-one correspondence with the color filters (R, G, B). The microlenses (ML) may converge incident light and transmit the converged light to the color filter of the corresponding unit pixel. The dummy microlenses (DML) formed in the peripheral region 200 may be continuously arranged starting from the microlenses (ML) in the pixel region 100.

[0039] Although Figure 2 each dummy microlens (DML) is shown by way of example as being formed to have the same size as each microlens (ML), it should be noted that the dummy microlenses (DML) may be different in size from the microlenses (ML).

[0040] The anti-peeling structure 136 may include a plurality of fingers f1 to f5. The fingers f1 to f5 may be continuously arranged and connected to each other such that their side surfaces are in contact with each other.

[0041] As Figure 4 shown, each finger (e.g., f1, f2, f3) may include a main body portion and an edge portion. The main body portion of each finger may include a region where its side surface is in contact with the side surface of an adjacent finger. The edge portion of each finger may include a region protruding from the main body portion.

[0042] As Figure 2As shown, in some implementations, the body portion of each of the fingers f1 to f5 may extend in the long axis direction (i.e., the length direction) to a predetermined length, thereby forming a rectangular shape. For example, the vertical cross-section of the body portion of each of the fingers f1 to f5 in the long axis direction may extend in the long axis direction to a predetermined length with a predetermined height. Additionally, as Figure 3A and Figure 3B shown, when viewed from a vertical cross-section in the short axis direction perpendicular to the length direction, the body portion of each of the fingers f1 to f5 may have a rounded surface to have a curvature as in a microlens. The bottom surface of the body portion of each finger may contact the top surface of the outer coating 132.

[0043] The edge portion of each of the fingers f1 to f5 may be formed to protrude from the body portion in the long axis direction, and all side surfaces of the protruding portion may have a curvature as in a microlens.

[0044] The fingers f1 to f5 may be continuously coupled to each other such that the side surfaces of the body portions of adjacent fingers contact each other, thereby forming an annular shape surrounding all of the microlenses 134.

[0045] The lens cover layer 140 may be formed above the lens layer 130. In some implementations, the lens cover layer 140 may extend from the pixel region 100 to the anti-peeling structure 136 in the peripheral region 200. In this case, the lens cover layer 140 may extend to have an end portion above the body portion of the finger provided in the anti-peeling structure 136. For example, in the anti-peeling structure 136, the body portions of the adjacent fingers f1 to f5 are continuously arranged and connected to each other while contacting each other without any empty space (hereinafter referred to as a dead zone) between the body portions of the adjacent fingers f1 to f5, and the edge line of the lens cover layer 140 may be formed above the body portions of the fingers f1 to f5.

[0046] In some implementations, the anti-peeling structure 136 includes a three-dimensional (3D) structure having fingers continuously connected to each other. Since the lens cover layer 140 formed above the continuously arranged fingers contacts the upper surface of the fingers over a large area, the lens cover layer 140 can be structurally strengthened and is not easily peeled off from the microlenses 134 and the anti-peeling structure 136.

[0047] In addition, in some implementations, the fingers f1 to f5 do not create a dead zone, and the lens layer 130 corresponding to the edge of the lens cover layer 140 may have a sufficient thickness to prevent potential damage to the light-shielding layer 110 disposed below the lens layer 130 during the etching process of the lens cover layer 140. Even if the lens layer 130 in the region corresponding to the edge of the lens cover layer 140 is damaged during the etching process of the lens cover layer 140, the light-shielding layer 110 disposed below the lens layer 130 can be protected by the lens layer 130.

[0048] Figure 5A is a schematic diagram showing potential problems that will occur when there is a dead zone between the fingers of the anti-peeling structure based on some implementations of the disclosed technology. Figure 5B is showing based on some implementations of the disclosed technology along Figure 5A a cross-sectional view of an example of an image sensing device taken along the line Y3 - Y3' shown. In Figure 5A and Figure 5B for ease of description, the same reference numerals as those in Figures 1 to 3B the drawings will be used to refer to the same or similar components.

[0049] Generally, during the patterning process of the lens cover layer 140, in the region where the lens cover layer 140 is etched (i.e., the region where the edge of the lens cover layer 140 is located), the lens cover layer 140 and the lens layer 130 disposed below the lens cover layer 140 are etched simultaneously.

[0050] In this case, as Figure 5A and Figure 5B shown, when there is a dead zone between the fingers, the dead zone only has the outer coating 132 of the lens layer 130 and can thus be formed to have a relatively thin thickness. Therefore, when the lens cover layer 140 is etched, the outer coating 132 of the dead zone is also etched, resulting in damage to the color filter layer 120. If the material layer formed above the light-shielding layer 110 is damaged, the light-shielding layer 110 may be eroded by moisture.

[0051] Therefore, in some implementations, the adjacent fingers f1 to f5 of the anti-peeling structure 136 are arranged continuously to contact each other, so that no dead zone is formed in the region where the edge line of the lens cover layer 140 is located.

[0052] Figure 6 is a schematic diagram showing an example of problems that occur when the anti-peeling structure is formed in a hemispherical shape such as a microlens based on some implementations of the disclosed technology.

[0053] Referring to Figure 6, if the anti-peeling structure is formed in a hemispherical shape, there is a dead zone between adjacent hemispheres. To prevent the edge of the lens cover layer 140 from being located in the dead zone, the edge of the lens cover layer 140 should be located at the center of the hemisphere, as indicated by line L1.

[0054] However, it is difficult to accurately position the edge of the lens cover layer 140 at the desired position. Due to the lack of manufacturing process precision, as indicated by line L2, the edge of the lens cover layer 140 may undesirably be formed to pass through the dead zone.

[0055] Therefore, in some implementations of the disclosed technology, the main bodies of the fingers f1 to f5 can be formed to have a sufficient length in the anti-peeling structure 136. In this way, even if the actual position of the edge of the lens cover layer 140 changes due to the lack of manufacturing process precision, the edge of the lens cover layer 140 remains within the main bodies of the fingers f1 to f5.

[0056] Figures 7A to 7D is a cross-sectional view showing an example of a process for forming the Figure 2 structure shown.

[0057] Referring to Figure 7A , a metal layer is formed and patterned above the semiconductor substrate to form the light-shielding layer 110. In some implementations, the light-shielding layer 110 can be formed in a grid shape including rows and columns arranged between adjacent color filters (R, G, B) within the pixel region 100. The light-shielding layer 110 can also be formed in the peripheral region 200 to cover the structures in the peripheral region 200. The light-shielding layer 110 can include tungsten (W) or can include a stacked structure of a barrier metal and tungsten (W).

[0058] Subsequently, after forming a resist (e.g., photoresist) material layer over the light-shielding layer 110, an exposure and development process is performed on the resist material layer, thereby forming the color filter layer 120. For example, after forming a red resist layer in the pixel region 100 and the peripheral region 200, the red resist layer can be exposed and developed based on the Bayer pattern such that the red resist layer remains only at positions corresponding to the red color filter. Subsequently, after forming a green resist layer in the pixel region 100 and the peripheral region 200 to fill the gaps between the red color filters, the green resist layer can be exposed and developed based on the Bayer pattern such that the green resist layer remains only at positions corresponding to the green color filter. As the gaps between the red color filters and the green color filters are filled, a blue resist layer is formed in the pixel region 100 and the peripheral region 200. Then, the blue resist layer can be exposed and developed based on the Bayer pattern such that the blue resist layer remains only at positions corresponding to the blue color filter. When forming one of the red color filter, the green color filter, and the blue color filter, the color filter layer formed over the light-shielding layer can be simultaneously formed in the peripheral region 200.

[0059] Referring to Figure 7B , an outer coating 132 can be formed over the color filter layer 120 in the pixel region 100 and the peripheral region 200. The outer coating 132 can include a polymeric material, e.g., a polystyrene-based resin, a polyimide-based resin, a polysiloxane-based resin, an acrylic resin, an epoxy-based resin, or a copolymer resin thereof.

[0060] Subsequently, after forming a material layer for a lens over the outer coating 132, the lens material layer is patterned, thereby forming the microlens pattern 134' and the anti-peeling pattern 136'.

[0061] In this case, as Figure 8 shown, the microlens pattern 134' can be formed such that a plurality of microlens patterns are spaced apart from each other, and the anti-peeling pattern 136' can be formed in a line shape protruding a predetermined length toward the pixel region 100. The lens material layer can have the same material as the material of the outer coating 132.

[0062] Referring to Figure 7C, a reflow process is performed on the microlens pattern 134' and the anti-peeling pattern 136' to form the microlenses ML and DML and the anti-peeling structure 136. For example, the microlens pattern 134' can be formed in a hemispherical shape with a curvature, thereby forming the microlenses ML and DML. In this case, adjacent microlenses ML and DML can be formed in such a way that their side surfaces are in contact with each other. The anti-peeling pattern 136' can be formed in a finger shape whose top surface has a curvature in the short-axis direction. In this case, the side surfaces of adjacent fingers are in contact with each other, so that no dead zone is formed between adjacent fingers.

[0063] If a structure is desired in which the side surfaces of the microlenses ML and DML are not in contact with each other and only the side surfaces of the fingers are in contact with each other, the gap between the microlens patterns 134' can be wider than the gap between the anti-peeling patterns 136'.

[0064] Referring to Figure 7D , after a low-temperature oxide (LTO) film is formed over the lens layer 130 in the pixel region 100 and the peripheral region 200, the low-temperature oxide (LTO) film is patterned to form the lens cover layer 140. In this case, the lens cover layer 140 can be patterned in such a way that the edge of the lens cover layer 140 is located at the main body portions of the fingers f1 to f5 of the anti-peeling structure 136.

[0065] Figure 9 is a cross-sectional view showing an example of an image sensing device based on some other implementations of the disclosed technology.

[0066] Referring to Figure 9 , the dummy microlens (DML) can extend more widely to connect to the anti-peeling structure 136.

[0067] Unlike Figure 2 the example in which the dummy microlens (DML) shown is spaced apart from the anti-peeling structure 136 by a predetermined distance while being in contact with the microlens (ML), leaving an empty space between the anti-peeling structure 136 and the dummy microlens (DML), Figure 9 the dummy microlens (DML) shown can be arranged to connect to the anti-peeling structure 136 while being in contact with the microlens (ML).

[0068] As is obvious from the above description, an image sensing device based on some implementations of the disclosed technology can prevent the lens cover layer from being easily peeled off, thereby effectively preventing damage to the light-shielding layer in the etching process of the lens cover layer.

[0069] The above-described embodiments are to be construed as illustrative in all respects and not restrictive. Although many illustrative embodiments have been described, it should be understood that those embodiments and other embodiments can be varied and modified based on what is described and / or illustrated in this patent document.

[0070] Cross-reference to related applications

[0071] This patent document claims the priority and benefit of Korean Patent Application No. 10-2020-0085538, filed on July 10, 2020, which is hereby incorporated by reference in its entirety into this application and made a part of the disclosure of this patent document.

Claims

1. An image sensing device, the image sensing device comprising: A semiconductor substrate configured to include a pixel region and a peripheral region, the pixel region including a plurality of unit pixels, and the peripheral region being located outside the pixel region; A plurality of microlenses disposed above the semiconductor substrate in the pixel region; A structural reinforcement layer disposed above the semiconductor substrate in the peripheral region; And A lens cover layer configured to cover at least a portion of the structural reinforcement layer and the plurality of microlenses, Wherein, the structural reinforcement layer includes: A plurality of fingers, each finger being configured to have a rounded upper end in the vertical direction and extending laterally toward the pixel region to have a predetermined length, Wherein, the plurality of fingers are continuously arranged and connected to each other in the lateral direction, and the side surface of a finger contacts the side surface of an adjacent finger.

2. The image sensing device according to claim 1, wherein, Each of the plurality of fingers includes: A main body portion configured to contact the side surface of the main body portion of an adjacent finger; and An edge portion formed to protrude from the main body portion and having a rounded protrusion.

3. The image sensing device according to claim 2, wherein, The lens cover layer includes an edge at the main body portion.

4. The image sensing device according to claim 1, the image sensing device further comprising a plurality of additional microlenses disposed in the peripheral region between the structural reinforcement layer and the microlenses in the pixel region.

5. The image sensing device according to claim 4, wherein, At least one of the plurality of additional microlenses is connected to the microlenses in the pixel region, and the plurality of additional microlenses are spaced apart from the structural reinforcement layer by a predetermined distance.

6. The image sensing device according to claim 4, wherein, The plurality of additional microlenses are continuously arranged to be connected to the microlenses in the pixel region and the structural reinforcement layer.

7. The image sensing device according to claim 1, the image sensing device further comprising: An outer coating layer located below the microlenses in the pixel region and the structural reinforcement layer.

8. The image sensing device according to claim 1, the image sensing device further comprising a light shielding layer configured to shield the semiconductor substrate in the peripheral region from light.

9. The image sensing device according to claim 1, wherein, The structural reinforcement layer is formed in an annular shape surrounding the microlenses.

10. An image sensing device, the image sensing device comprising: A planarization layer formed above a lower structure, the lower structure including sensor pixels configured to detect incident light to output an electrical signal indicative of an image of the incident light; A plurality of microlenses disposed above the planarization layer to converge incident light on the sensor pixels; A structural reinforcement layer disposed above the planarization layer to surround the plurality of microlenses; And A lens cover layer disposed above the plurality of microlenses and the structural reinforcement layer, Wherein, the structural reinforcement layer includes a plurality of fingers, each finger having a main body portion that has a curvature in a short axis direction and extends without curvature to a predetermined length in a long axis direction perpendicular to the short axis direction, Among them, the plurality of finger-like objects are arranged continuously adjacent to each other.

11. The image sensing device according to claim 10, wherein the main body portion of each finger-like object is configured to extend vertically to a predetermined height and includes a rounded upper end in the short-axis direction.

12. The image sensing device according to claim 10, wherein Each of the plurality of finger-like objects further includes an edge portion that is formed to protrude from the main body portion in the long-axis direction such that a side surface of the protruding portion is formed to have a curvature in the short-axis direction and the long-axis direction.

13. The image sensing device according to claim 10, wherein, The lens covering layer includes an edge located at the main body portion.

14. The image sensing device according to claim 10, wherein, The plurality of microlenses are arranged in such a way that the outermost microlens among the plurality of microlenses is spaced apart from the structure reinforcing layer by a predetermined distance.

15. The image sensing device according to claim 10, wherein, The plurality of microlenses are arranged in such a way that the outermost microlens among the plurality of microlenses is arranged to be connected to the structure reinforcing layer.

Images