Wafer bonding control method, control device and bonding system

Abstract

The present application provides a control method, control device, and bonding system for wafer bonding, the method comprising: a bonding machine obtaining an alignment deviation between a first wafer and a second wafer, the first wafer and the second wafer being the two wafers to be bonded; when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusting the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold; and the bonding machine bonding the adjusted first and second wafers. The method determines the alignment deviation between the first and second wafers during the bonding process, ensuring that the alignment deviation is relatively accurate, thereby ensuring that the two wafers are substantially consistent after adjustment based on the alignment deviation, and thus ensuring that the bonding accuracy of the two wafers after adjustment is high.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and in particular to a wafer bonding control method, a control device, a computer-readable storage medium, a processor, and a bonding system. Background Art

[0002] The bonding process can integrate two or more chips with the same or different functions in three dimensions, which greatly reduces the chip R&D and manufacturing cycle, shortens the metal interconnection between functional chips, and alleviates problems such as heat, power consumption and delay, but the premise is to ensure high bonding alignment accuracy.

[0003] The scaling before wafer bonding is one of the important indicators of alignment accuracy in the bonding process. Since the two wafers to be bonded have different dimensional values, it is necessary to compensate for the difference in scaling between the two wafers by adjusting the parameters of the bonding chuck.

[0004] The current compensation mechanism measures the deformation of each wafer pair before bonding (e.g., during the photolithography process). Based on the measured deformation values, the required scaling compensation for each wafer pair is predicted. The operating parameters of the wafer chuck in the bonding machine are then set accordingly to achieve scaling compensation. However, due to the manufacturing processes between photolithography and bonding, the wafers may also change during these processes, resulting in inaccurate predicted scaling compensation values and ultimately low alignment accuracy.

[0005] The above information disclosed in the background technology section is only used to enhance the understanding of the background technology of the technology described in this article. Therefore, the background technology may contain certain information that does not form the prior art known in this country to those skilled in the art. Summary of the Invention

[0006] The main purpose of the present application is to provide a wafer bonding control method, a control device, a computer-readable storage medium, a processor, and a bonding system to solve the problem of low bonding alignment accuracy in the prior art.

[0007] According to one aspect of an embodiment of the present invention, a control method for wafer bonding is provided, including: a bonding machine obtains an alignment deviation between a first wafer and a second wafer, where the first wafer and the second wafer are two wafers to be bonded; when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold; and the bonding machine bonds the adjusted first wafer and the second wafer.

[0008] Optionally, the bonding machine obtains the alignment deviation of the first wafer and the second wafer, including: the bonding machine obtains first information and second information, the first information includes first size information of the first wafer and position information of a first mark of the first wafer, and the second information includes second size information of the second wafer and position information of a second mark of the second wafer; the bonding machine determines the alignment deviation based on the first information and the second information.

[0009] Optionally, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold, including: a first determination step, when the alignment deviation is greater than or equal to the predetermined threshold, the bonding machine determines a first adjustment value of the first wafer and / or a second adjustment value of the second wafer according to the alignment deviation; an adjustment step, when the bonding machine adjusts the first wafer and / or the second wafer according to the first adjustment value and / or the second adjustment value; an acquisition step, when the bonding machine acquires the adjusted alignment deviation; a second determination step, when the bonding machine determines whether the adjusted alignment deviation is less than the predetermined threshold, and when the adjusted alignment deviation is less than the predetermined threshold, the bonding machine stops the adjustment action.

[0010] Optionally, when the adjusted alignment deviation is greater than or equal to the predetermined threshold, the method further includes: repeating the first determination step, the adjustment step, the acquisition step and the second determination step at least once in sequence until the adjusted alignment deviation is less than the predetermined threshold.

[0011] Optionally, the bonding machine includes a first adsorption platform and a second adsorption platform, the first wafer is located on the first adsorption platform, and the second wafer is located on the second adsorption platform, and the adjustment step includes: the bonding machine determines the first working parameter of the first adsorption platform and / or the second working parameter of the second adsorption platform according to the first adjustment value and / or the second adjustment value; the first adsorption platform operates according to the first working parameter to adjust the first wafer, and / or the second adsorption platform operates according to the second working parameter to adjust the second wafer.

[0012] Optionally, the alignment deviation includes scaling deviation, offset deviation and deflection deviation.

[0013] According to another aspect of an embodiment of the present invention, a control device for wafer bonding is further provided, comprising an acquisition unit, an adjustment unit and a bonding unit, wherein the acquisition unit is used by a bonding machine to acquire an alignment deviation between a first wafer and a second wafer, wherein the first wafer and the second wafer are two wafers to be bonded; the adjustment unit is used by the bonding machine to adjust the first wafer and / or the second wafer when the alignment deviation is greater than or equal to a predetermined threshold, so that the adjusted alignment deviation is less than the predetermined threshold; and the bonding unit is used by the bonding machine to bond the adjusted first wafer and the second wafer.

[0014] According to yet another aspect of the embodiments of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium includes a stored program, wherein the program executes any one of the methods described above.

[0015] According to yet another aspect of an embodiment of the present invention, a processor is provided, wherein the processor is configured to run a program, wherein any one of the methods is executed when the program is run.

[0016] According to another aspect of an embodiment of the present invention, a bonding system is provided, which includes a bonding machine and a control device of the bonding machine, wherein the control device is configured to execute any one of the methods described above.

[0017] In an embodiment of the present invention, the control method for wafer bonding is as follows: first, the bonding machine obtains the alignment deviation of the first wafer and the second wafer; then, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold; finally, the bonding machine bonds the first wafer and the second wafer whose alignment deviation is less than the predetermined threshold. Compared with the prior art, the deformation values of the first wafer and the second wafer are tested according to a predetermined process before the bonding process, and the scaling compensation value is predicted based on the deformation value. Due to the low accuracy of the predicted scaling compensation value, the alignment accuracy of the bonding between the wafers is low. The method of the present application determines the alignment deviation of the first wafer and the second wafer during the bonding process, ensuring that the alignment deviation is relatively accurate, and further ensuring that the two wafers are basically consistent after adjustment based on the alignment deviation, thereby ensuring that the bonding accuracy of the two wafers after adjustment is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings that constitute part of this application are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation on this application. In the drawings:

[0019] Figure 1A schematic diagram of a process flow generated by a control method for wafer bonding according to an embodiment of the present application is shown;

[0020] Figure 2 A schematic diagram of a first wafer and a second wafer according to an embodiment of the present application is shown;

[0021] Figure 3 A schematic diagram of a wafer bonding control device according to an embodiment of the present application is shown.

[0022] The above drawings include the following reference numerals:

[0023] 100, first wafer mark point; 101, second wafer mark point. DETAILED DESCRIPTION

[0024] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0025] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0026] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0027] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element or intervening elements may be present. Moreover, in the specification and claims, when it is described that an element is "connected to" another element, the element may be "directly connected to" the other element or "connected to" the other element through a third element.

[0028] As mentioned in the background technology, the alignment accuracy of bonding in the prior art is low. In order to solve the above problem, in a typical embodiment of the present application, a wafer bonding control method, a control device, a computer-readable storage medium, a processor and a bonding system are provided.

[0029] According to an embodiment of the present application, a method for controlling wafer bonding is provided.

[0030] Figure 1 FIG. 1 is a flow chart of a control method for wafer bonding according to an embodiment of the present application. Figure 1 As shown, the method includes the following steps:

[0031] Step S101: A bonding machine obtains an alignment deviation between a first wafer and a second wafer, where the first wafer and the second wafer are two wafers to be bonded.

[0032] Step S102: When the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold, which includes three situations: a first situation, the bonding machine adjusts the first wafer so that the alignment deviation between the second wafer and the adjusted first wafer is less than the predetermined threshold; a second situation, the bonding machine adjusts the second wafer so that the alignment deviation between the first wafer and the adjusted second wafer is less than the predetermined threshold; a third situation, the bonding machine adjusts the first wafer and the second wafer so that the adjusted alignment deviation between the first wafer and the adjusted second wafer is less than the predetermined threshold;

[0033] In step S103, the bonding machine bonds the adjusted first wafer and the second wafer, that is, the bonding machine bonds the first wafer and the adjusted second wafer; or the bonding machine bonds the second wafer and the adjusted first wafer; or the bonding machine bonds the adjusted first wafer and the adjusted second wafer.

[0034] In the above-mentioned control method for wafer bonding, first, the bonding machine obtains the alignment deviation of the first wafer and the second wafer; then, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold; finally, the bonding machine bonds the first wafer and the second wafer whose alignment deviation is less than the predetermined threshold. Compared with the prior art, which tests the deformation values of the first wafer and the second wafer according to a predetermined process before the bonding process, and then predicts the scaling compensation value based on the deformation value, the predicted scaling compensation value has a low accuracy, resulting in a low alignment accuracy of the bonding between the wafers. The above-mentioned method of the present application determines the alignment deviation of the first wafer and the second wafer during the bonding process, ensuring that the alignment deviation is relatively accurate, and further ensuring that the two wafers are basically consistent after adjustment based on the alignment deviation, thereby ensuring that the bonding accuracy of the two wafers after adjustment is high.

[0035] In actual applications, the deformation includes deformation in the X-axis direction and deformation in the Y-axis direction. The first wafer can be an array wafer or a CMOS wafer; the second wafer can be an array wafer or a CMOS wafer. Of course, the first wafer and the second wafer are not limited to the array wafer and CMOS wafer, and can also be any suitable wafer in the prior art.

[0036] According to a specific embodiment of the present application, a bonding machine obtains an alignment deviation between a first wafer and a second wafer, including: the bonding machine obtains first information and second information, the first information including first size information of the first wafer and position information of a first mark on the first wafer, and the second information including second size information of the second wafer and position information of a second mark on the second wafer; the bonding machine determines the alignment deviation based on the first information and the second information. The alignment deviation is determined based on the size information of the first wafer and the position information of the marks of the second wafer, thereby further ensuring that the determined alignment deviation is relatively accurate.

[0037] Specifically, if Figure 2As shown, the first mark includes at least one first wafer mark point 100, and the second mark includes at least one corresponding second wafer mark point 101. By adjusting the first wafer and the second wafer, the adjusted first wafer mark point 100 is basically coincident with the second wafer mark point 101. By obtaining the position information of the mark points, it is further ensured that the position deviation of the first wafer and the second wafer is determined more accurately. In order to further ensure that the determined alignment deviation is more accurate, the position information of as many mark points as possible can be obtained. Of course, the first mark and the second mark are not limited to the mark points, and they can also include any position on the wafer, that is, any corresponding position of the first wafer and the second wafer. Those skilled in the art can make flexible choices based on actual conditions.

[0038] In order to further ensure that the obtained alignment deviation is relatively accurate, in another specific embodiment of the present application, the bonding machine performs data fitting on the first information and the second information to determine the alignment deviation.

[0039] In order to further ensure that the adjusted first wafer and the second wafer can be basically aligned, according to another specific embodiment of the present application, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold, including: a first determination step, when the alignment deviation is greater than or equal to the predetermined threshold, the bonding machine determines the first adjustment value of the first wafer and / or the second adjustment value of the second wafer according to the alignment deviation, that is, there are three situations, the first one, the bonding machine determines the first adjustment value according to the alignment deviation; the second one, the bonding machine determines the second adjustment value according to the alignment deviation; the third one, the bonding machine The bonding machine determines the first adjustment value and the second adjustment value according to the alignment deviation; in an adjusting step, the bonding machine adjusts the first wafer and / or the second wafer according to the first adjustment value and / or the second adjustment value, that is, the bonding machine adjusts the first wafer according to the first adjustment value; or the bonding machine adjusts the second wafer according to the second adjustment value; it is also possible that the bonding machine adjusts the first wafer according to the first adjustment value and adjusts the second wafer according to the second adjustment value; in an acquiring step, the bonding machine acquires the adjusted alignment deviation; in a second determining step, the bonding machine determines whether the adjusted alignment deviation is less than the predetermined threshold value. If the adjusted alignment deviation is less than the predetermined threshold value, the bonding machine stops the adjusting action.

[0040] In another specific embodiment of the present application, when the adjusted alignment deviation is greater than or equal to the predetermined threshold, the method further includes: repeating the first determining step, the adjusting step, the obtaining step, and the second determining step at least once in sequence until the adjusted alignment deviation is less than the predetermined threshold. This can further ensure that the adjusted alignment deviation is more accurate, thereby further ensuring that the bonding alignment accuracy of the first wafer and the second wafer after subsequent adjustment is higher.

[0041] According to another specific embodiment of the present application, the above-mentioned bonding machine includes a first adsorption platform and a second adsorption platform, the above-mentioned first wafer is located on the above-mentioned first adsorption platform, and the above-mentioned second wafer is located on the above-mentioned second adsorption platform, and the above-mentioned adjustment step includes: the above-mentioned bonding machine determines the first working parameter of the above-mentioned first adsorption platform and / or the second working parameter of the above-mentioned second adsorption platform according to the above-mentioned first adjustment value and / or the above-mentioned second adjustment value; the above-mentioned first adsorption platform operates according to the above-mentioned first working parameter to adjust the above-mentioned first wafer, and / or the above-mentioned second adsorption platform operates according to the above-mentioned second working parameter to adjust the above-mentioned second wafer. When only the first wafer needs to be adjusted, the bonding machine determines the first operating parameter of the first adsorption platform according to the first adjustment value, and then controls the movement of the first adsorption platform according to the first operating parameter to adjust the first wafer; when only the second wafer needs to be adjusted, the bonding machine determines the second operating parameter of the second adsorption platform according to the second adjustment value, and then controls the movement of the second adsorption platform according to the second operating parameter to adjust the second wafer; when both the first and second wafers need to be adjusted, the bonding machine determines the first operating parameter of the first adsorption platform according to the first adjustment value, and determines the second operating parameter of the second adsorption platform according to the second adjustment value; then controls the movement of the first adsorption platform according to the first operating parameter to adjust the first wafer, and controls the movement of the second adsorption platform according to the second operating parameter to adjust the second wafer.

[0042] In actual application, the alignment deviation includes scaling deviation, offset deviation and deflection deviation. Compared with the wafer design value, the deformation of the first wafer is the first deformation, the deformation of the second wafer is the second deformation, and the scaling deviation is the absolute value of the difference between the first deformation and the second deformation; the predetermined threshold also includes a first threshold and a second threshold, wherein the offset deviation is the absolute value of the difference between the position of the first wafer and the position of the second wafer, such as the position deviation between the first wafer mark point 100 and the corresponding second wafer mark point 101, such as Figure 2 As shown; the above-mentioned deflection deviation is the angle between the axis of the above-mentioned first wafer and the axis of the above-mentioned second wafer, and the above-mentioned axis is the major axis or the minor axis. The above-mentioned bonding machine is also used to perform translation adjustment on the above-mentioned first wafer and / or the above-mentioned second wafer when the above-mentioned offset deviation is greater than or equal to the above-mentioned first threshold value, so that the above-mentioned offset deviation after adjustment is less than the above-mentioned first threshold value; the above-mentioned bonding machine is also used to perform rotation adjustment on the above-mentioned first wafer and / or the above-mentioned second wafer when the above-mentioned deflection deviation is greater than or equal to the above-mentioned second threshold value, so that the above-mentioned deflection deviation after adjustment is less than the above-mentioned second threshold value. Afterwards, the above-mentioned bonding machine bonds the adjusted above-mentioned first wafer and the above-mentioned second wafer.

[0043] It should be noted that the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and that, although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0044] The present application also provides a wafer bonding control device. It should be noted that the wafer bonding control device of the present application can be used to execute the wafer bonding control method provided in the present application. The wafer bonding control device provided in the present application is introduced below.

[0045] Figure 3 Schematic diagram of a wafer bonding control device according to an embodiment of the present application. Figure 3As shown, the device includes an acquisition unit 10, an adjustment unit 20 and a bonding unit 30, wherein the acquisition unit 10 is used for the bonding machine to acquire the alignment deviation of the first wafer and the second wafer, and the first wafer and the second wafer are two wafers to be bonded; the adjustment unit 20 is used for, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine to adjust the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold, that is, there are three cases, the first case, the bonding machine adjusts the first wafer so that the alignment deviation between the second wafer and the adjusted first wafer is less than the predetermined threshold; the second case, the bonding machine adjusts the first wafer The second wafer is adjusted so that the alignment deviation between the first wafer and the adjusted second wafer is smaller than the predetermined threshold value; in the third case, the bonding machine adjusts the first wafer and the second wafer so that the alignment deviation between the adjusted first wafer and the adjusted second wafer is smaller than the predetermined threshold value; the bonding unit 30 is used for the bonding machine to bond the adjusted first wafer and the second wafer, that is, the bonding machine bonds the first wafer and the adjusted second wafer; or the bonding machine bonds the second wafer and the adjusted first wafer; or the bonding machine bonds the adjusted first wafer and the adjusted second wafer.

[0046] In the above-mentioned wafer bonding control device, the bonding machine obtains the alignment deviation of the first wafer and the second wafer through the above-mentioned acquisition unit; when the alignment deviation is greater than or equal to a predetermined threshold, the above-mentioned bonding machine adjusts the above-mentioned first wafer and / or second wafer through the above-mentioned adjustment unit so that the adjusted alignment deviation is less than the above-mentioned predetermined threshold; and the above-mentioned bonding machine bonds the above-mentioned first wafer and the above-mentioned second wafer whose alignment deviation is less than the above-mentioned predetermined threshold through the above-mentioned bonding unit. Compared with the prior art, which tests the deformation values of the first wafer and the second wafer according to a predetermined process before the bonding process and then predicts the scaling compensation value based on the deformation value, and the problem of low alignment accuracy of the bonding between the wafers due to the low accuracy of the predicted scaling compensation value, the above-mentioned device of the present application determines the alignment deviation of the above-mentioned first wafer and the above-mentioned second wafer during the bonding process, ensuring that the above-mentioned alignment deviation is relatively accurate, and further ensuring that the two wafers are substantially consistent after adjustment based on the above-mentioned alignment deviation, thereby ensuring high bonding accuracy of the two wafers after adjustment.

[0047] In actual applications, the deformation includes deformation in the X-axis direction and deformation in the Y-axis direction. The first wafer can be an array wafer or a CMOS wafer; the second wafer can be an array wafer or a CMOS wafer. Of course, the first wafer and the second wafer are not limited to the array wafer and CMOS wafer, and can also be any suitable wafer in the prior art.

[0048] According to a specific embodiment of the present application, the acquisition unit includes a first acquisition module and a first determination module, wherein the first acquisition module is used for the bonding machine to acquire first information and second information, the first information including first size information of the first wafer and position information of a first mark on the first wafer, and the second information including second size information of the second wafer and position information of a second mark on the second wafer; the first determination module is used for the bonding machine to determine the alignment deviation based on the first information and the second information. The alignment deviation is determined based on the size information of each of the first and second wafers and the position information of the marks, thereby further ensuring that the determined alignment deviation is relatively accurate.

[0049] Specifically, if Figure 2 As shown, the first mark includes at least one first wafer mark point 100, and the second mark includes at least one corresponding second wafer mark point 101. By adjusting the first wafer and the second wafer, the adjusted first wafer mark point 100 is basically coincident with the second wafer mark point 101. By obtaining the position information of the mark points, it is further ensured that the position deviation of the first wafer and the second wafer is determined more accurately. In order to further ensure that the determined alignment deviation is more accurate, the position information of as many mark points as possible can be obtained. Of course, the first mark and the second mark are not limited to the mark points, and they can also include any position on the wafer, that is, any corresponding position of the first wafer and the second wafer. Those skilled in the art can make flexible choices based on actual conditions.

[0050] In order to further ensure that the obtained alignment deviation is relatively accurate, in another specific embodiment of the present application, the bonding machine performs data fitting on the first information and the second information to determine the alignment deviation.

[0051] In order to further ensure that the adjusted first wafer and the second wafer can be basically aligned, according to another specific embodiment of the present application, the adjustment unit includes a second determination module, an adjustment module, a second acquisition module and a third determination module, wherein the second determination module is used for the first determination step. When the alignment deviation is greater than or equal to the predetermined threshold, the bonding machine determines the first adjustment value of the first wafer and / or the second adjustment value of the second wafer according to the alignment deviation, that is, there are three situations. The first is that the bonding machine determines the first adjustment value according to the alignment deviation; the second is that the bonding machine determines the second adjustment value according to the alignment deviation; the third is that the bonding machine determines the first adjustment value and the second adjustment value according to the alignment deviation. ; The above-mentioned adjustment module is used for the adjustment step, and the above-mentioned bonding machine adjusts the above-mentioned first wafer and / or the above-mentioned second wafer according to the above-mentioned first adjustment value and / or the above-mentioned second adjustment value, that is, the above-mentioned bonding machine adjusts the above-mentioned first wafer according to the above-mentioned first adjustment value; or the above-mentioned bonding machine adjusts the above-mentioned second wafer according to the above-mentioned second adjustment value; it is also possible that the above-mentioned bonding machine adjusts the above-mentioned first wafer according to the above-mentioned first adjustment value, and adjusts the above-mentioned second wafer according to the above-mentioned second adjustment value; the above-mentioned second acquisition module is used for the acquisition step, and the above-mentioned bonding machine obtains the above-mentioned alignment deviation after adjustment; the above-mentioned third determination module is used for the second determination step, and the above-mentioned bonding machine determines whether the above-mentioned alignment deviation after adjustment is less than the above-mentioned predetermined threshold value. When the above-mentioned alignment deviation after adjustment is less than the above-mentioned predetermined threshold value, the above-mentioned bonding machine stops the adjustment action.

[0052] In another specific embodiment of the present application, the apparatus further includes a repeating module, wherein the repeating module is configured to, when the adjusted alignment deviation is greater than or equal to the predetermined threshold, execute a repeating step, sequentially repeating the first determining step, the adjusting step, the acquiring step, and the second determining step at least once, until the adjusted alignment deviation is less than the predetermined threshold. This can further ensure that the adjusted alignment deviation is more accurate, thereby further ensuring that the bonding alignment accuracy of the first wafer and the second wafer after subsequent adjustment is higher.

[0053] According to another specific embodiment of the present application, the above-mentioned bonding machine includes a first adsorption platform and a second adsorption platform, the above-mentioned first wafer is located on the above-mentioned first adsorption platform, and the above-mentioned second wafer is located on the above-mentioned second adsorption platform, and the above-mentioned adjustment module includes a determination submodule and an adjustment submodule, wherein the above-mentioned determination submodule is used for the above-mentioned bonding machine to determine the first working parameter of the above-mentioned first adsorption platform and / or the second working parameter of the above-mentioned second adsorption platform according to the above-mentioned first adjustment value and / or the above-mentioned second adjustment value; the above-mentioned adjustment submodule is used for the above-mentioned first adsorption platform to operate according to the above-mentioned first working parameter to adjust the above-mentioned first wafer, and / or the above-mentioned second adsorption platform to operate according to the above-mentioned second working parameter to adjust the above-mentioned second wafer. When only the first wafer needs to be adjusted, the bonding machine determines the first operating parameter of the first adsorption platform according to the first adjustment value, and then controls the movement of the first adsorption platform according to the first operating parameter to adjust the first wafer; when only the second wafer needs to be adjusted, the bonding machine determines the second operating parameter of the second adsorption platform according to the second adjustment value, and then controls the movement of the second adsorption platform according to the second operating parameter to adjust the second wafer; when both the first and second wafers need to be adjusted, the bonding machine determines the first operating parameter of the first adsorption platform according to the first adjustment value, and determines the second operating parameter of the second adsorption platform according to the second adjustment value; then controls the movement of the first adsorption platform according to the first operating parameter to adjust the first wafer, and controls the movement of the second adsorption platform according to the second operating parameter to adjust the second wafer.

[0054] In actual application, the alignment deviation includes scaling deviation, offset deviation and deflection deviation. Compared with the wafer design value, the deformation of the first wafer is the first deformation, the deformation of the second wafer is the second deformation, and the scaling deviation is the absolute value of the difference between the first deformation and the second deformation; the predetermined threshold also includes a first threshold and a second threshold, wherein the offset deviation is the absolute value of the difference between the position of the first wafer and the position of the second wafer, such as the position deviation between the first wafer mark point 100 and the corresponding second wafer mark point 101, such as Figure 2As shown; the above-mentioned deflection deviation is the angle between the axis of the above-mentioned first wafer and the axis of the above-mentioned second wafer, and the above-mentioned axis is the major axis or the minor axis. The above-mentioned bonding machine is also used to perform translation adjustment on the above-mentioned first wafer and / or the above-mentioned second wafer when the above-mentioned offset deviation is greater than or equal to the above-mentioned first threshold value, so that the above-mentioned offset deviation after adjustment is less than the above-mentioned first threshold value; the above-mentioned bonding machine is also used to perform rotation adjustment on the above-mentioned first wafer and / or the above-mentioned second wafer when the above-mentioned deflection deviation is greater than or equal to the above-mentioned second threshold value, so that the above-mentioned deflection deviation after adjustment is less than the above-mentioned second threshold value. Afterwards, the above-mentioned bonding machine bonds the adjusted above-mentioned first wafer and the above-mentioned second wafer.

[0055] The wafer bonding control device includes a processor and a memory. The acquisition unit, the adjustment unit, the bonding unit, etc. are all stored in the memory as program units, and the processor executes the program units stored in the memory to realize corresponding functions.

[0056] The processor includes a core, which retrieves the corresponding program unit from the memory. One or more cores can be provided, and the problem of low bonding alignment accuracy in the prior art can be solved by adjusting the core parameters.

[0057] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0058] An embodiment of the present invention provides a computer-readable storage medium having a program stored thereon, which implements the above-mentioned wafer bonding control method when executed by a processor.

[0059] An embodiment of the present invention provides a processor, which is used to run a program, wherein the program executes the wafer bonding control method when running.

[0060] An embodiment of the present invention provides a device, comprising a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, at least the following steps are performed:

[0061] Step S101: A bonding machine obtains an alignment deviation between a first wafer and a second wafer, where the first wafer and the second wafer are two wafers to be bonded.

[0062] Step S102, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold;

[0063] In step S103 , the bonding machine bonds the adjusted first wafer and the second wafer.

[0064] The devices in this article can be servers, PCs, PADs, mobile phones, etc.

[0065] The present application also provides a computer program product, which, when executed on a data processing device, is adapted to execute a program for initializing at least the following method steps:

[0066] Step S101: A bonding machine obtains an alignment deviation between a first wafer and a second wafer, where the first wafer and the second wafer are two wafers to be bonded.

[0067] Step S102, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold;

[0068] In step S103 , the bonding machine bonds the adjusted first wafer and the second wafer.

[0069] According to another typical embodiment of the present application, a bonding system is further provided. The bonding system includes a bonding machine and a control device of the bonding machine. The control device is used to execute any one of the above methods.

[0070] The above-mentioned bonding system includes a bonding machine and a control device for the above-mentioned bonding machine, and the above-mentioned control device executes any one of the above-mentioned methods. Compared with the prior art, the deformation values of the first wafer and the second wafer are tested according to a predetermined process before the bonding process, and the scaling compensation value is then predicted based on the deformation value. Due to the low accuracy of the predicted scaling compensation value, the alignment accuracy of the bonding between the wafers is low. The above-mentioned bonding system of the present application determines the alignment deviation of the above-mentioned first wafer and the above-mentioned second wafer during the bonding process, ensuring that the above-mentioned alignment deviation is relatively accurate, and further ensuring that the two wafers are basically consistent after adjustment based on the above-mentioned alignment deviation, thereby ensuring that the bonding accuracy of the two wafers after adjustment is high.

[0071] In the above embodiments of the present invention, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0072] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. Among them, the device embodiments described above are only exemplary. For example, the division of the above-mentioned units can be a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of units or modules, which can be electrical or other forms.

[0073] The units described above as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0074] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0075] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server or network device, etc.) to execute all or part of the steps of the above-mentioned methods of each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk.

[0076] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0077] 1) In the wafer bonding control method described above, first, the bonding machine obtains the alignment deviation of the first wafer and the second wafer; then, when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold; finally, the bonding machine bonds the first wafer and the second wafer whose alignment deviation is less than the predetermined threshold. Compared to the prior art, which tests the deformation values of the first wafer and the second wafer according to a predetermined process before the bonding process and then predicts a scaling compensation value based on the deformation value, and which has a low accuracy in the predicted scaling compensation value, resulting in a low alignment accuracy in the bonding between the wafers, the method described above in the present application determines the alignment deviation of the first wafer and the second wafer during the bonding process, ensuring that the alignment deviation is relatively accurate, thereby ensuring that the two wafers are substantially consistent after adjustment based on the alignment deviation, and thus ensuring a high bonding accuracy for the two wafers after adjustment.

[0078] 2) In the wafer bonding control device described above in the present application, the bonding machine obtains the alignment deviation of the first wafer and the second wafer via the acquisition unit; when the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer via the adjustment unit so that the adjusted alignment deviation is less than the predetermined threshold; and the bonding machine bonds the first wafer and the second wafer whose alignment deviation is less than the predetermined threshold via the bonding unit. Compared to the prior art, which tests the deformation values of the first wafer and the second wafer according to a predetermined process before the bonding process and then predicts a scaling compensation value based on the deformation value, resulting in low alignment accuracy between the wafers due to the low accuracy of the predicted scaling compensation value, the device described above in the present application determines the alignment deviation of the first wafer and the second wafer during the bonding process, ensuring that the alignment deviation is relatively accurate, thereby ensuring that the two wafers are substantially consistent after adjustment based on the alignment deviation, thereby ensuring high bonding accuracy between the two wafers after adjustment.

[0079] 3) The bonding system of the present application includes a bonding machine and a control device for the bonding machine, and the control device executes any one of the above methods. Compared with the prior art, the deformation values of the first wafer and the second wafer are tested according to a predetermined process before the bonding process, and the scaling compensation value is predicted based on the deformation value. Due to the low accuracy of the predicted scaling compensation value, the alignment accuracy of the bonding between the wafers is low. The bonding system of the present application determines the alignment deviation of the first wafer and the second wafer during the bonding process, ensuring that the alignment deviation is relatively accurate, and further ensuring that the two wafers are basically consistent after adjustment based on the alignment deviation, thereby ensuring that the bonding accuracy of the two wafers after adjustment is high.

[0080] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A wafer bonding control method, characterized in that: include: A bonding machine obtains an alignment deviation between a first wafer and a second wafer, where the first wafer and the second wafer are two wafers to be bonded; When the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold; The bonding machine bonds the adjusted first wafer and the second wafer; The bonding machine obtains the alignment deviation between the first wafer and the second wafer, including: The bonding machine acquires first information and second information, wherein the first information includes first size information of the first wafer and position information of a first mark on the first wafer, and the second information includes second size information of the second wafer and position information of a second mark on the second wafer; The bonding machine performs data fitting on the first information and the second information to determine the alignment deviation.

2. The method according to claim 1, characterized in that When the alignment deviation is greater than or equal to a predetermined threshold, the bonding machine adjusts the first wafer and / or the second wafer so that the adjusted alignment deviation is less than the predetermined threshold, including: A first determining step, in which, when the alignment deviation is greater than or equal to the predetermined threshold, the bonding machine determines a first adjustment value for the first wafer and / or a second adjustment value for the second wafer according to the alignment deviation; an adjustment step, wherein the bonding machine adjusts the first wafer and / or the second wafer according to the first adjustment value and / or the second adjustment value; an acquisition step, wherein the bonding machine acquires the adjusted alignment deviation; In a second determining step, the bonding machine determines whether the adjusted alignment deviation is smaller than the predetermined threshold value. If the adjusted alignment deviation is smaller than the predetermined threshold value, the bonding machine stops adjusting.

3. The method according to claim 2, characterized in that In a case where the adjusted alignment deviation is greater than or equal to the predetermined threshold, the method further includes: The repeating step comprises sequentially repeating the first determining step, the adjusting step, the acquiring step, and the second determining step at least once until the adjusted alignment deviation is smaller than the predetermined threshold.

4. The method according to claim 2, characterized in that The bonding machine includes a first adsorption platform and a second adsorption platform, the first wafer is located on the first adsorption platform, and the second wafer is located on the second adsorption platform, and the adjusting step includes: The bonding machine determines a first operating parameter of the first adsorption platform and / or a second operating parameter of the second adsorption platform according to the first adjustment value and / or the second adjustment value; The first adsorption platform operates according to the first working parameters to adjust the first wafer, and / or the second adsorption platform operates according to the second working parameters to adjust the second wafer.

5. The method according to any one of claims 1 to 4, characterized in that The alignment deviation includes scaling deviation, offset deviation and yaw deviation.

6. A wafer bonding control device, characterized in that: include: An acquisition unit is configured to acquire, by a bonding machine, an alignment deviation between a first wafer and a second wafer, where the first wafer and the second wafer are two wafers to be bonded; an adjusting unit, configured to, when the alignment deviation is greater than or equal to a predetermined threshold, adjust the first wafer and / or the second wafer by the bonding machine so that the adjusted alignment deviation is less than the predetermined threshold; a bonding unit, configured to bond the adjusted first wafer and the second wafer using the bonding machine; The acquisition unit includes a first acquisition module and a first determination module, wherein the first acquisition module is used for the bonding machine to acquire first information and second information, the first information including first size information of the first wafer and position information of a first mark on the first wafer, and the second information including second size information of the second wafer and position information of a second mark on the second wafer; The first determining module is used by the bonding machine to determine the alignment deviation according to the first information and the second information; The bonding machine performs data fitting on the first information and the second information to determine the alignment deviation.

7. A computer-readable storage medium, characterized in that The computer-readable storage medium includes a stored program, wherein the program executes the method according to any one of claims 1 to 5.

8. A processor, characterized in that: The processor is configured to run a program, wherein the program executes the method according to any one of claims 1 to 5 when running.

9. A bonding system, characterized in that include: bonding machine; The control device of the bonding machine is used to execute the method according to any one of claims 1 to 5.

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