Plasma treatment equipment

Abstract

The present invention provides a plasma processing device capable of obtaining a uniform plasma space. The plasma processing device includes: a processing container, a mounting table, a shielding component, a liftable gate for an opening, a first drive unit, and a second drive unit. The processing container has a side wall, and a conveying passage for carrying in and out the processed body is formed on the side wall. The mounting table is arranged in the processing container. The shielding component is arranged along the inner surface of the above-mentioned side wall in a manner of surrounding and covering the mounting table. An opening facing the conveying passage is formed in the shielding component. The first drive unit lifts and lowers the gate. The second drive unit moves the gate in the front-rear direction relative to the shielding component.

Description

Technical Field

[0001] This application is a divisional application of an application with a filing date of June 21, 2018, application number 201810642212.8, and name “Plasma Processing Device”. Background Art

[0002] In the manufacture of electronic devices such as semiconductor devices, a plasma processing apparatus is used to perform plasma processing on a target object. Plasma processing includes various processes such as etching and film formation using plasma of a processing gas.

[0003] A plasma processing device used in plasma processing includes a processing container that divides a plasma processing space. A conveying passage for carrying in and out a processed object is formed on the side wall of the processing container. In addition, a shielding member (deposit shield) that protects the inner surface of the side wall of the processing container is arranged along the inner surface of the side wall. In order to carry in and out the processed object, an opening opposite to the conveying passage is formed on the shielding member. In addition, a liftable gate that can open and close the opening of the shielding member is arranged between the inner surface of the side wall and the shielding member. When closing the opening of the shielding member, the gate contacts only with the contact portion of the shielding member. The contact portion is an alloy having conductivity. Such a plasma processing device is described in, for example, Japanese Patent Gazette No. 2015-95543 (Patent Document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2015-95543 Summary of the invention

[0007] The technical problem that the invention is intended to solve

[0008] The plasma processing device described in Patent Document 1 forms the contact portion between the gate and the shield member with an alloy, thereby stabilizing the electrical connection between the gate and the shield member. Such electrical stability helps to form a uniform plasma space. However, the plasma processing device described in Patent Document 1 still has room for improvement from the perspective of forming a more uniform plasma space. In the technical field, a plasma processing device that forms a uniform plasma space is desired.

[0009] Methods for solving problems

[0010] In one aspect, the present invention provides a plasma processing device for performing plasma processing on a processed object. The plasma processing device includes: a processing container, a mounting table, a shielding member, a liftable gate for an opening, a first drive unit, and a second drive unit. The processing container has a side wall, and a conveying passage for carrying in and out the processed object is formed on the side wall. The mounting table is arranged in the processing container. The shielding member is arranged along the inner surface of the side wall in a manner of surrounding and covering the mounting table. An opening facing the conveying passage is formed in the shielding member. The first drive unit lifts and lowers the gate. The second drive unit moves the gate in the front-rear direction relative to the shielding member.

[0011] In the plasma processing device of one aspect described above, the gate is raised and lowered by the first drive unit and is moved in the front-rear direction relative to the shielding member by the second drive unit. For example, when the opening is closed, the gate is raised and lowered to a position opposite to the opening by the first drive unit. At this position, the gate is moved toward the shielding member by the second drive unit and is pressed against the shielding member. In this way, by having the second drive unit, the gate can be brought into contact with the shielding member, so that the electrical connection between the gate and the shielding member can be stabilized. As a result, the plasma processing device can form a uniform plasma space.

[0012] In one embodiment, the second driving unit may include a driving shaft for pressing the shutter.

[0013] According to this embodiment, the shutter can be brought into contact with the shield member using one drive shaft.

[0014] In one embodiment, the first drive unit may include a lifting drive shaft connected to the connection portion of the gate for lifting the gate, and the drive shaft presses the connection portion. According to this embodiment, compared with a case where a part other than the connection portion is pressed, the stress generated at the connection portion between the gate and the lifting drive shaft can be reduced.

[0015] In one embodiment, the second drive unit may include a plurality of drive shafts for pressing the shutter. According to this embodiment, the shutter can be pressed against the shielding member more uniformly than when one drive shaft presses the shutter.

[0016] In one embodiment, the plasma processing apparatus may include a conductive member disposed on the shielding member so as to surround the opening. According to this embodiment, the electrical connection between the gate and the shielding member can be made more stable.

[0017] In one embodiment, the plasma processing apparatus may include a conductive member disposed on the gate so as to surround a region of the gate corresponding to the opening. According to this embodiment, the electrical connection between the gate and the shielding member can be further stabilized.

[0018] Effects of the Invention

[0019] As described above, a plasma processing apparatus capable of obtaining a uniform plasma space is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an embodiment.

[0021] Figure 2 It is a cross-sectional view showing a shielding member and a shutter according to one embodiment.

[0022] Figure 3 is a perspective view of a shielding member according to an embodiment.

[0023] Figure 4 Yes Figure 3 A fragmentary perspective view showing an enlarged representation of a portion of the shield member is shown.

[0024] Figure 5 is a perspective view of a gate according to one embodiment.

[0025] Figure 6 FIG. 1 is a diagram schematically showing an operation of closing an opening of a shield using a shutter according to an embodiment.

[0026] Description of Reference Numerals

[0027] 10…Plasma treatment device

[0028] 12…Handling container

[0029] 20…Putting table

[0030] 40…Drive device (first drive unit)

[0031] 45…Drive device (second drive unit)

[0032] 60…Shielding parts

[0033] 60b…lower

[0034] 60c…Thin wall part

[0035] 60d…Thick wall part

[0036] 60i…Inner Surface

[0037] 60m…Main body

[0038] 60w...outer surface

[0039] 61…Conductive parts

[0040] 61b…Contacted surface

[0041] 62…Conductive parts

[0042] 62b…Contacted surface

[0043] 63…Conductive parts

[0044] 70…Gate

[0045] 70a…Part 1

[0046] 70b…Part 2

[0047] 70c…Part 3

[0048] 72a…Conductive parts

[0049] 72b…Conductive parts

[0050] 72c…Conductive parts

[0051] 80...Drive shaft (drive shaft for lifting)

[0052] 82…Upper drive shaft

[0053] 83…Lower drive shaft

[0054] OP…opening

[0055] W… chip. DETAILED DESCRIPTION

[0056] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein the same reference numerals are given to the same or corresponding parts in each of the drawings.

[0057] Figure 1 This is a diagram probabilistically showing a plasma processing apparatus according to one embodiment. Figure 1 A longitudinal section of a plasma processing apparatus is schematically shown in FIG. Figure 1 The plasma processing apparatus 10 shown is an apparatus for performing plasma processing on a processing target object (hereinafter referred to as a “wafer W”).

[0058] The plasma processing apparatus 10 includes a processing container 12. The processing container 12 defines a processing space S therein. The plasma processing apparatus 10 stores a wafer W in the processing space S and performs plasma processing on the wafer W.

[0059] In one embodiment, the processing container 12 includes: a side wall 12a, a bottom 12b and a top 12c. The side wall 12a has a substantially cylindrical shape. The side wall 12a extends in the vertical direction with the axis Z as its central axis as the center. Hereinafter, in this specification, the direction in which the axis Z extends is sometimes referred to as the "axis Z direction", "vertical direction", "up and down". In addition, the radial direction relative to the axis Z is sometimes referred to as the "radial direction". Moreover, the direction along the arc centered on the axis Z is sometimes referred to as the "circumferential direction".

[0060] A bottom portion 12b is provided at the lower end side of the side wall 12a, and a top portion 12c is provided at the upper end side of the side wall 12a. In addition, a transfer passage CP is formed on the side wall 12a for transferring a wafer W into the processing container 12 and transferring the wafer W out of the processing container 12. The transfer passage CP can be opened and closed by a gate valve GV.

[0061] The plasma processing apparatus 10 further includes a stage 20. The stage 20 is disposed in the processing container 12. A shielding member 60 is disposed along the inner surface of the side wall 12a of the processing container 12 in a manner that surrounds and covers the stage 20. The shielding member 60 is a member for preventing reaction products generated by plasma processing from being deposited on the inner surface of the side wall 12a. The shielding member 60 is a member in a substantially cylindrical shape, and its central axis is substantially consistent with the axis Z. An opening OP (see FIG. 1 ) opposite to the conveying passage CP is formed in the shielding member 60. Figure 2 and Figure 3 ).

[0062] In addition, a shutter 70 capable of being raised and lowered is provided in the processing container 12 for shielding the opening of the member 60. The shutter 70 is raised and lowered by the driving device 40 (first driving unit).

[0063] The drive device 40 moves the gate 70 in the up-down direction along the shielding member 60. The drive device 40 includes a drive shaft 80 (drive shaft for lifting) and a drive circuit 41. The front end of the drive shaft 80 is connected to the connection portion of the gate 70. The drive circuit 41 outputs a control signal to the drive shaft 80 to move the drive shaft 80. The drive shaft 80 lifts and lowers the gate 70 according to the control signal from the drive circuit 41. As a specific example, the gate 70 is located in the first area when the opening OP is opened to the conveying path CP when the wafer W is carried in and out. On the other hand, the gate 70 is located in the second area above the first area when the opening OP is closed during plasma processing.

[0064] When the shutter 70 is located in the second region, the drive device 45 (second drive unit) moves the shutter 70 in the front-rear direction relative to the shield member 60. The drive device 45 moves the shutter 70 in the front-rear direction relative to the shield member 60.

[0065] The driving device 45 includes an upper driving shaft 82, a lower driving shaft 83, and a driving circuit 46. The upper driving shaft 82 and the lower driving shaft 83 are arranged in a manner of being located at a position opposite to the opening OP of the shielding member 60. As a more specific example, the upper driving shaft 82 and the lower driving shaft 83 are arranged in the conveying path CP. The driving circuit 46 outputs a control signal to the upper driving shaft 82 and the lower driving shaft 83 to move the upper driving shaft 82 and the lower driving shaft 83. The upper driving shaft 82 and the lower driving shaft 83 move toward the opening OP according to the control signal from the driving circuit 46. Thus, the upper driving shaft 82 and the lower driving shaft 83 press the gate 70 located in the second area toward the shielding member 60. The lower driving shaft 83 can be configured to press the connecting portion between the driving shaft 80 and the gate 70. The gate 70 located in the second area is pressed to the shielding member 60 by the driving device 45. The details of the shielding member 60 and the gate 70 will be described later.

[0066] The mounting table 20 includes a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE is connected to a high-frequency power source RFG via a matching unit MU. The high-frequency power source RFG generates a high-frequency power (high-frequency bias power) for ion introduction. The electrostatic chuck ESC is disposed on the lower electrode LE. The electrostatic chuck ESC holds the wafer W mounted on its upper surface by adsorbing the wafer W using Coulomb force.

[0067] In one example, the lower electrode LE includes a first plate 22a and a second plate 22b. The first plate 22a is a substantially disk-shaped member. In addition, the first plate 22a is a conductive member, for example, made of aluminum. The first plate 22a is supported by a substantially cylindrical support portion SP1. The support portion SP1 extends upward from the bottom 12b and abuts against the peripheral region of the lower surface of the first plate 22a. The support portion SP1 is made of an insulator such as quartz.

[0068] The second plate 22b is provided on the first plate 22a. The second plate 22b is a substantially disc-shaped member. The second plate 22b is a conductive member, for example, made of aluminum. The second plate 22b is electrically connected to the first plate 22a.

[0069] The first plate 22a is electrically connected to the high frequency power source RFG via the matching unit MU. The high frequency power source RFG outputs a high frequency bias power of a certain frequency, for example, 13.65 MHz, suitable for controlling the energy of ions introduced into the wafer W. The matching unit MU accommodates a matching device for matching the impedance of the high frequency power source RFG side with the impedance of the load side such as the electrode, plasma, and processing container 12. The matching device includes a blocking capacitor for self-bias generation.

[0070] A refrigerant chamber RC is provided inside the second plate 22b. A refrigerant of a predetermined temperature, such as cooling water, is supplied to the refrigerant chamber RC in a circulating manner from the cooling unit via the pipes PP1 and PP2. The temperature of the wafer W on the electrostatic chuck ESC is controlled by the refrigerant circulating in this way. In addition, a heat transfer gas, such as He gas, is supplied from a heat transfer gas supply unit between the upper surface of the electrostatic chuck ESC and the back surface of the wafer W via the supply pipe PP3.

[0071] The electrostatic chuck ESC is provided on the upper surface of the second plate 22b. The electrostatic chuck ESC has a substantially disk shape. The electrostatic chuck ESC holds the wafer W by electrostatic adsorption force. Therefore, the electrostatic chuck ESC includes an electrode film EF sandwiched between dielectric films. The electrode film EF is electrically connected to the DC power supply DS via a switch SW. The electrostatic chuck ESC can adsorb the wafer W on its upper surface by the Coulomb force generated by the DC voltage applied by the DC power supply DS, and hold the wafer W.

[0072] In addition, a heater HC and a heater HE are provided in the dielectric film of the electrostatic chuck ESC. The heater HC is provided in the central region of the electrostatic chuck ESC. The heater HC is connected to a heater power supply HP1. The heater power supply HP1 supplies AC power to the heater HC. The heater HE is provided at a radially outer position than the heater HC. The heater HE is connected to a heater power supply HP2. The heater power supply HP2 supplies AC power to the heater HE.

[0073] Furthermore, a through hole is formed in the electrostatic chuck ESC and the lower electrode LE to penetrate the electrostatic chuck ESC and the lower electrode LE in the vertical direction, and a pusher pin LP passes through the through hole. The pusher pin LP rises when the wafer W is loaded or unloaded, and supports the wafer W at its upper end.

[0074] In addition, a focus ring FR is provided radially outside the electrostatic chuck ESC. The focus ring FR extends in an annular shape along the edge of the electrostatic chuck ESC and the edge of the wafer W so as to surround the electrostatic chuck ESC. The focus ring FR is made of a dielectric such as quartz. The focus ring FR is provided to adjust the sheath potential outside the edge of the wafer W, and contributes to the in-plane uniformity of the plasma processing of the wafer W.

[0075] A cylindrical portion TP1 is provided below the focus ring FR. The cylindrical portion TP1 is made of an insulator such as alumina. The cylindrical portion TP1 has a cylindrical shape and extends along the outer peripheral surface of the lower electrode LE.

[0076] An annular portion AP is provided between the cylindrical portion TP1 and the focus ring FR. The annular portion AP is made of an insulator such as alumina. The annular portion AP extends annularly along the outer peripheral surface of the second plate 22b. The upper surface of the annular portion AP contacts the lower surface of the focus ring FR. In addition, the lower surface of the annular portion AP contacts the upper end of the cylindrical portion TP1.

[0077] A cylindrical portion TP2 is provided below the peripheral portion of the annular portion AP. The cylindrical portion TP2 has a substantially cylindrical shape. The cylindrical portion TP2 extends along the outer periphery of the cylindrical portion TP1 and the supporting portion SP1. The cylindrical portion TP2 is made of a conductive material such as aluminum. In addition, a film made of yttrium oxide (Y2O3) may be formed on the surface of the cylindrical portion TP2. Alternatively, an oxidation treatment may be applied to the surface of the cylindrical portion TP2.

[0078] The space from the outer circumferential surface of the cylindrical portion TP2 and the outer circumferential surface of the annular portion AP to the side wall 12a and the shielding member 60 forms an exhaust path VL. The exhaust path VL extends to the bottom 12b and is connected to the exhaust device 30 via an exhaust pipe installed on the bottom 12b. The exhaust device 30 has a pressure regulator and a vacuum pump such as a turbomolecular pump. By operating the exhaust device 30, gas is exhausted from the outer periphery of the mounting table 20 through the exhaust path VL, and the processing space S in the processing container 12 can be decompressed to a desired vacuum degree.

[0079] A baffle plate BP is provided in the middle of the exhaust path VL in the vertical direction. The baffle plate BP is a plate-shaped member extending in an annular shape with the axis Z as the center. A plurality of through holes are formed in the baffle plate BP. These through holes penetrate the baffle plate BP in the vertical direction. The inner edge of the baffle plate BP is provided between the cylindrical portion TP2 and the annular portion AP. In addition, the outer edge of the baffle plate BP is supported by the shielding member 60.

[0080] In addition, the plasma processing apparatus 10 further includes a plasma generating unit PG and a gas supply unit GS. The plasma generating unit PG introduces energy for exciting the gas supplied from the gas supply unit GS into the processing container 12. In one embodiment, the plasma generating unit PG is disposed at the top 12c. In one example, the plasma generating unit PG introduces microwaves into the processing container 12. The plasma generating unit PG may be a capacitively coupled plasma source. In this case, the plasma generating unit PG may be an upper electrode. In the case where the plasma generating unit PG is an upper electrode, a high-frequency power source that generates high-frequency power for plasma generation may be connected to one of the upper electrode and the lower electrode LE. Alternatively, the plasma generating unit PG may be an inductively coupled plasma source. Alternatively, the plasma generating unit PG may be a microwave supply unit.

[0081] The gas supply unit GS supplies gas into the processing container 12. The gas is excited by the energy provided by the plasma generating unit PG, and plasma processing is performed using the excited gas. Figure 1 As shown in FIG. 1 , the gas supply unit GS includes a gas introduction pipe 50. The gas introduction pipe 50 extends from the outside to the inside of the processing container 12. The gas introduction pipe 50 is connected to a gas source 52. The gas source 52 supplies a gas corresponding to the plasma processing to the wafer W in a flow-controlled state. Figure 1 For example, the gas supply unit GS may supply gas from the top portion 12c instead of or in addition to the gas introduction pipe 50. In addition, when the plasma generation unit PG is an upper electrode, the gas supply unit GS may also be a showerhead composed of the upper electrode.

[0082] The shielding member 60 and the shutter 70 will be described in detail below. Figure 2 It is a cross-sectional view showing a shield member and a shutter according to one embodiment, and shows a state in which the shutter is located in the second region and closes the opening of the shield member. Figure 3 is a perspective view of a shielding member according to an embodiment, Figure 4 Yes Figure 3 A fragmentary perspective view showing an enlarged representation of a portion of the shield member is shown. Figure 5 is a perspective view of a gate according to one embodiment.

[0083] like Figure 3 As shown, the shielding member 60 has a main body 60m. The main body 60m has a substantially cylindrical shape. Figure 1 As shown, the main body 60m is provided on the side wall 12a so that its central axis is substantially consistent with the axis Z. The main body 60m is made of aluminum, for example. A yttrium oxide (Y2O3) film may be formed on the surface of the main body 60m, or an oxidation treatment may be performed.

[0084] In one embodiment, if Figure 2 , Figure 3 and Figure 4 As shown in FIG. 1 , the main body 60m includes a flange portion 60f. The flange portion 60f constitutes the uppermost portion of the main body 60m. The flange portion 60f expands the outer diameter of the main body 60m at the uppermost portion of the main body 60m. The flange portion 60f is as shown in FIG. Figure 2 As shown, the side wall 12a is supported by the side wall 12a. Specifically, the side wall 12a includes two parts that can be separated up and down, and the flange portion 60f is sandwiched between the two parts.

[0085] In addition, the main body 60m Figure 2 , Figure 3 and Figure 4As shown, the main body 60m includes a lower portion 60b. The lower portion 60b constitutes the lowermost portion of the main body 60m. The lower portion 60b has a predetermined thickness in the height direction, that is, the direction in which the axis Z extends (hereinafter referred to as the "axis Z direction").

[0086] An opening OP is formed in the main body 60m. Figure 2 As shown, it is arranged to face the conveying path CP. Figure 2 , Figure 3 and Figure 4 As shown, the main body 60m includes a thin-walled portion 60c that surrounds the cover opening OP from the top and both sides of the circumferential direction. In addition, the main body 60m includes a thick-walled portion 60d that constitutes the main body 60m on the upper side and both sides of the circumferential direction of the thin-walled portion 60c. The thickness of the thin-walled portion 60c in the radial direction is thinner than the thickness of the thick-walled portion 60d in the radial direction, and is the same as the thickness of the lower portion 60b in the radial direction. In addition, the inner circumferential surface of the thin-walled portion 60c, the thick-walled portion 60d and the inner circumferential surface of the lower portion 60b are continuous, forming the inner circumferential surface 60i of the main body 60m. The outer circumferential surface 60w of the thin-walled portion 60c is continuous with the outer circumferential surface of the lower portion 60b. The outer circumferential surface 60w of the thin-walled portion 60c is closer to the axis Z than the outer circumferential surface of the thick-walled portion 60d.

[0087] The thin-walled portion 60c has an end face 60t1 and a pair of end faces 60t2. The end face 60t1 extends in the circumferential direction above the opening OP and is a surface facing downward. In addition, a pair of end faces 60t2 extend in the vertical direction from the two edges in the circumferential direction of the end face 60t1 and are surfaces intersecting the circumferential direction. The edge 60e, which is the boundary between these end faces 60t1, 60t2 and the outer peripheral surface 60w of the thin-walled portion 60c, extends in the circumferential direction in a manner of dividing the opening OP from above, and extends in the vertical direction in a manner of dividing the opening OP from both sides in the circumferential direction. In addition, the opening OP is divided from below by the edge 60g of the lower portion 60b. The edge 60g constitutes the upper edge of the outer peripheral surface of the lower portion 60b.

[0088] like Figure 4 As shown, the thick wall portion 60d has an end face 60p1 and a pair of end faces 60p2. The end face 60p1 is a surface extending in the circumferential direction and is a surface facing downward. The end face 60p1 is higher than the end face 60t1 and extends radially outward. In addition, the pair of end faces 60p2 extends in the vertical direction from the two edges of the circumferential direction of the end face 60p1 and is a surface intersecting the circumferential direction. The pair of end faces 60p2 is farther away from the opening OP in the circumferential direction than the pair of end faces 60t2, and further extends radially outward than the pair of end faces 60t2.

[0089] The outer peripheral surface of the lower portion 60b is located on the same peripheral surface as the outer peripheral surface 60w of the thin-walled portion 60c. That is, the distance between the outer peripheral surface of the lower portion 60b and the axis Z is the same as the distance between the outer peripheral surface 60w of the thin-walled portion 60c and the axis Z. The outer peripheral surface of the lower portion 60b, the outer peripheral surface 60w of the thin-walled portion 60c, and the end surfaces 60p1 and 60p2 of the thick-walled portion 60d define a space for storing the shutter 70.

[0090] In addition, if Figure 2 and Figure 4 As shown, similarly, a groove extending in the circumferential direction and a pair of grooves extending in the axis Z direction are formed on the outer peripheral surface 60w of the thin-walled portion 60c. A conductive component 61 is embedded in the groove extending in the circumferential direction. A conductive component 63 is embedded in the groove extending in the axis Z direction. The outer peripheral surfaces of these conductive components 61 and 63 constitute contact surfaces 61b and 63b. In addition, the conductive components 61 and 63 can be screwed to the thin-walled portion 60c. That is, the conductive components 61 and 63 can be removed from the thin-walled portion 60c. The conductive components 61 and 63 are formed of, for example, an alloy (for example, Hastelloy (registered trademark)).

[0091] Similarly, a groove extending in the circumferential direction is formed on the outer peripheral surface of the lower part 60b. The conductive member 62 is embedded in the groove. The outer peripheral surface of these conductive members 62 constitutes the contact surface 62b. In addition, the conductive member 62 can be screwed to the lower part 60b. That is, the conductive member 62 can be removed from the lower part 60b. The conductive member 62 is formed of, for example, an alloy (for example, Hastelloy (registered trademark)).

[0092] like Figure 2 As shown, the gate 70 has a first portion 70a, a second portion 70b and a third portion 70c. The second portion 70b is a portion opposite to the opening OP when the gate 70 closes the opening OP. The gate 70 is made of aluminum, for example. A film made of yttrium oxide (Y2O3) can be formed on the surface of the gate 70. Alternatively, the surface of the gate 70 can also be subjected to oxidation treatment.

[0093] like Figure 2 and Figure 5 As shown, the gate 70 is in the shape of a plate extending in the circumferential direction.

[0094] The gate 70 includes an inner surface and an outer surface that is farther from the axis Z than the inner surface. The radius of curvature of the inner surface of the gate 70 is substantially consistent with the distance from the axis Z to the opening OP. In addition, the gate 70 includes an end face 70t1, a pair of end faces 70t2, and an end face 70t3. The end face 70t1 is a face at the upper end of the gate 70, extending in the circumferential direction, and is a face facing upward. In addition, a pair of end faces 70t2 extend in the vertical direction from both edges of the circumferential direction of the end face 70t1, and are faces intersecting the circumferential direction. In addition, the end face 70t3 is a face at the lower end of the gate 70, extending in the circumferential direction, and is a face facing downward.

[0095] A groove 70g is formed on the inner peripheral surface side of the first portion 70a of the shutter 70. The groove 70g extends in the circumferential direction. The conductive member 72a is fitted into the groove 70g.

[0096] The conductive member 72a may be a member having elasticity. The conductive member 72a is formed of, for example, an alloy (for example, Hastelloy (registered trademark)). In one example, the conductive member 72a is formed in a spiral shape centered on an arc extending in the circumferential direction.

[0097] A groove 70h is formed on the inner peripheral surface side of the third portion 70c of the shutter 70. The groove 70h extends in the circumferential direction. The conductive member 72b is fitted into the groove 70h.

[0098] The conductive member 72b is formed of, for example, an alloy (for example, Hastelloy (registered trademark)). In one example, the conductive member 72b is formed in a spiral shape centered around an arc extending in the circumferential direction.

[0099] A pair of grooves 70i are formed on both sides of the inner peripheral surface side of the second portion 70b of the gate 70. The pair of grooves 70i extend in the vertical direction respectively. A pair of conductive members 72c are respectively embedded in the pair of grooves 70i. The pair of conductive members 72c are formed of, for example, an alloy (for example, Hastelloy (registered trademark)). In one example, the pair of conductive members 72c are formed in a spiral shape centered on a straight line extending in the vertical direction.

[0100] As an example, the example in which linear conductive members are arranged around the area of ​​the gate 70 corresponding to the opening OP on the gate 70 has been described, but an annular conductive member may be arranged on the gate 70 so as to surround the area of ​​the gate 70 corresponding to the opening OP. In addition, at the lower end of the gate 70, there is a connection portion connected to the driving shaft 80 for lifting.

[0101] Figure 6 This is a diagram schematically showing an operation of closing the opening of the shield by the shutter according to one embodiment. Figure 6(a) shows the state where the gate 70 is located in the first area. Figure 6 (b) shows the state where the gate 70 is located in the second area. Figure 6 (c) shows a state where the shutter is pressed against the shielding member 60. When the shutter 70 is used to close the opening OP, Figure 6 As shown in (a) and (b) of FIG. 1 , the gate 70 is moved from the first area to the second area above by the driving shaft 80. When the gate 70 is arranged in the second area, as shown in FIG. Figure 2 As shown, the second portion 70b of the gate 70 is opposite to the opening OP. In this state, the end face 70t1 of the first portion 70a is opposite to the end face 60p1 of the shielding member 60 with a gap. In addition, a pair of end faces 70t2 of the gate 70 are opposite to the pair of end faces 60p2 of the shielding member 60 with a gap. In addition, the inner peripheral surface of the first portion 70a and the second portion 70b of the gate 70 are opposite to the outer peripheral surface 60w of the thin-walled portion 60c of the shielding member 60 with a gap in the radial direction. Moreover, the inner peripheral surface of the third portion 70c of the gate 70 is opposite to the outer peripheral surface of the lower portion 60b of the shielding member 60 with a gap in the radial direction. As a result, gaps of a labyrinth structure are formed above and below the opening OP and on both sides in the circumferential direction. The first and second portions 70a and 70b of the gate 70 face the outer peripheral surface 60w of the thin-walled portion 60c of the shield member 60 from the radial outside on both sides, and the third portion 70c of the gate 70 faces the outer peripheral surface of the lower portion 60b of the shield member 60 from the radial outside.

[0102] exist Figure 6 In the state shown in (b), if Figure 6 As shown in (c), the gate 70 located in the second area is pressed toward the shielding member 60 by the upper drive shaft 82 and the lower drive shaft 83. As a result, the conductive members 72a, 72b, and 72c are reliably in contact with the contacted surfaces 61b, 62b, and 63b, respectively. In this way, the gate 70 and the shielding member 60 are in contact with each other at the conductive members 72a, 72b, and 72c and the contacted surfaces 61b, 62b, and 63b, and the gate 70 and the shielding member 60 are conductive over the entire circumference of the opening OP, so that the electrical connection between the gate 70 and the shielding member 60 can be stabilized. Therefore, plasma leakage during plasma processing can be suppressed, and a more uniform plasma space can be obtained.

[0103] In addition, according to the gate 70, when the conductive members 72a, 72b and 72c are consumed, only the conductive members 72a, 72b and 72c can be replaced. Therefore, compared with the gate 70 entirely composed of conductive members such as Hastelloy (registered trademark), the gate 70 can be provided at a low cost.

[0104] When opening the opening OP, first, the drive device 45 releases the pressing of the shutter 70 by the upper drive shaft 82 and the lower drive shaft 83. Then, the shutter 70 moves downward by the drive shaft 80 and returns from the second area to the first area. Thus, the opening OP is opened.

[0105] As described above, in the plasma processing apparatus 10 of one aspect of the present disclosure, the gate 70 is raised and lowered by the driving device 40, and is moved in the front-rear direction relative to the shielding member 60 by the driving device 45. For example, when the opening OP is closed, the gate 70 is raised and lowered by the driving device 40 to a position opposite to the opening OP. At this position, the gate 70 is moved toward the shielding member 60 by the driving device 45, and is pressed against the shielding member 60. In this way, by having the driving device 45, the gate 70 can be brought into contact with the shielding member 60, so that the electrical connection between the gate 70 and the shielding member 60 can be stabilized. As a result, the plasma processing apparatus 10 can form a uniform plasma space.

[0106] In addition, the drive device 40 has a drive shaft 80 connected to the connection portion of the gate 70 for raising and lowering the gate 70, and the lower drive shaft 83 presses the connection portion. Therefore, compared with the case where the connection portion is pressed, the stress generated at the connection portion between the gate 70 and the drive shaft 80 can be reduced.

[0107] In addition, the drive device 45 has a plurality of drive shafts (82, 83) for pressing the shutter 70. Therefore, compared with a case where the shutter 70 is pressed by one drive shaft, the shutter 70 can be pressed against the shield member 60 more uniformly.

[0108] In addition, the plasma processing apparatus 10 includes conductive members (61, 62, 63) disposed on the shield member 60 so as to surround the opening OP. Therefore, the gate 70 and the shield member 60 are electrically connected to each other over the entire circumference of the opening OP, so that the electrical connection between the gate 70 and the shield member 60 can be further stabilized.

[0109] In addition, the plasma processing apparatus includes conductive members (70a, 70b, 70c) disposed on the gate 70 so as to surround the region of the gate 70 corresponding to the opening OP. Therefore, the gate 70 and the shielding member 60 are electrically connected over the entire circumference of the opening OP, so that the electrical connection between the gate 70 and the shielding member 60 can be made more stable.

[0110] As mentioned above, although each embodiment was described, it is not limited to the said embodiment, Various deformation|transformation embodiments can be comprised.

[0111] For example, the drive device 40 may include a plurality of drive shafts 80. The drive device 45 may be attached to only one of the upper drive shaft 82 and the lower drive shaft 83, or may further include another drive shaft.

[0112] In the above embodiment, the shutter 70 is accommodated in the space defined inside the shield member 60, but the shutter 70 may be arranged outside the shield member 60. In this case, there is no need to provide a gap on the side of the shutter 70 to avoid interference.

Claims

1. A plasma processing device for performing plasma processing on a processed object, characterized in that: include: A processing container having a side wall, the side wall being formed with a first opening for carrying in and out the object to be processed; A mounting table disposed in the processing container; a shielding member disposed along the inner surface of the side wall in a manner surrounding the mounting table, the shielding member having a second opening facing the first opening, the shielding member including first upper and lower conductive members and first right and left conductive members, the first conductive members being respectively inserted into grooves formed on the shielding member around the second opening; a liftable gate for the second opening of the shielding member; a first driving unit for raising and lowering the gate; and a second driving unit for moving the shutter in a front-rear direction relative to the shielding member, The first driving unit includes a first driving shaft directly connected to the lower surface of the connecting portion of the gate for lifting the gate. The second driving unit includes: a second upper driving shaft connected to the upper side of the gate in a manner that presses the gate toward the shielding member; and a second lower driving shaft connected to the lower side of the gate in a manner that presses the gate toward the shielding member. The second upper drive shaft and the second lower drive shaft are arranged in the first opening arranged in the side wall. The second lower drive shaft is configured to press the connecting portion of the gate. The gate includes second upper and lower conductive parts and second right and left conductive parts, and the first conductive part and the second conductive part are formed of an alloy so that the electrical connection between the gate and the shielding part becomes stable. When the gate is pressed toward the shielding component by the second upper driving shaft and the second lower driving shaft, the second upper and lower conductive components are connected to the first upper and lower conductive components, respectively, and the second right and left conductive components are connected to the first right and left conductive components, respectively, to suppress plasma leakage.

2. The plasma processing device according to claim 1, wherein: The first drive shaft has a plurality of lifting drive shafts.

3. The plasma processing apparatus according to claim 1, wherein: The gate is arranged outside the shielding member.

4. The plasma processing apparatus according to claim 1, wherein: A film composed of yttrium oxide is formed on the surface of the gate, or the surface of the gate is subjected to oxidation treatment.

5. The plasma processing apparatus according to claim 1, wherein: A film composed of yttrium oxide is formed on the surface of the main body of the shield member, or an oxidation treatment is performed on the surface of the main body of the shield member.

6. The plasma processing apparatus according to claim 1, wherein: The second upper and lower conductive members are formed into a spiral shape centered on an arc extending in the circumferential direction of the gate, and the second right and left conductive members are formed into a spiral shape centered on a straight line extending in the vertical direction of the gate.

7. The plasma processing apparatus according to claim 1, wherein: The second upper and lower conductive members and the second right and left conductive members are arranged in a ring shape.

8. The plasma processing apparatus according to claim 1, wherein: The first upper and lower conductive members and the first right and left conductive members are provided so as to be detachable from the shield member.

9. The plasma processing apparatus according to claim 1, wherein: The first upper and lower conductive members and the first right and left conductive members are fixed to the shielding member by screws.

10. A plasma processing device for performing plasma processing on a processed object, characterized in that: include: A processing container having a side wall, the side wall being formed with a first opening for carrying in and out the object to be processed; A mounting table disposed in the processing container; a shielding member disposed along the inner surface of the side wall in a manner surrounding the mounting table, the shielding member having a second opening facing the first opening, the shielding member including first upper and lower conductive members and first right and left conductive members, the first conductive members being respectively inserted into grooves formed on the shielding member around the second opening; a liftable gate for the second opening of the shielding member; and a driving unit that moves the gate from a first area lower than the second opening to a second area opposite to the second opening with a gap therebetween, and presses the gate located in the second area toward the shielding member when closing the second opening, and releases the pressing of the gate toward the shielding member when opening the second opening, so that the gate moves to the first area, The driving unit includes a first driving shaft directly connected to the lower surface of the connecting portion of the gate for lifting and lowering the gate. The driving unit includes: a second upper driving shaft connected to the upper side of the gate in a manner that presses the gate toward the shielding member; and a second lower driving shaft connected to the lower side of the gate in a manner that presses the gate toward the shielding member. The second upper drive shaft and the second lower drive shaft are arranged in the first opening arranged in the side wall. The second lower drive shaft is configured to press the connecting portion of the gate. The gate includes second upper and lower conductive parts and second right and left conductive parts, and the first conductive part and the second conductive part are formed of an alloy so that the electrical connection between the gate and the shielding part becomes stable. When the gate is pressed toward the shielding component by the second upper driving shaft and the second lower driving shaft, the second upper and lower conductive components are connected to the first upper and lower conductive components, respectively, and the second right and left conductive components are connected to the first right and left conductive components, respectively, to suppress plasma leakage.

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