Patterned materials and patterned films

Abstract

This application provides a patterning material comprising a polysiloxane, wherein the polysiloxane includes at least one cyclic structure composed of repeating Si-O bonds and organic groups attached to Si atoms in the cyclic structure; wherein at least one portion of the Si atoms in the cyclic structure is replaced by a metal element, and / or at least one organic group contains a halogen element. The patterning material of this application exhibits high sensitivity and high pattern resolution under 1nm–15nm X-ray irradiation, enabling high-quality and high-efficiency patterning processes. Using the patterning material of this application in the fabrication of electronic components such as chips can improve the precision and fabrication efficiency of electronic components. This application also provides patterned thin films formed using this patterning material.

Description

Technical Field

[0001] This application relates to the field of integrated circuit fabrication technology, and more particularly to a patterning material and a patterned thin film formed using the patterning material. Background Technology

[0002] The popularity of high-performance electronic devices has driven the continuous development of industries related to integrated circuit manufacturing. As chip manufacturing processes in integrated circuits continue to evolve, chip integration density is increasing, critical dimensions within chips are shrinking, and manufacturing processes are becoming more precise, placing increasingly stringent requirements on the performance of materials used in these processes. In particular, the patterning materials used in patterning processes (also known as photoresists) directly affect pattern quality (including pattern resolution and edge roughness), and ultimately, the precision of integrated circuits.

[0003] For extreme ultraviolet (EUV) lithography, existing EUV patterning materials either have low photosensitivity to 1–15 nm X-rays, leading to low chip manufacturing efficiency, or large molecular sizes, resulting in low pattern resolution and high edge roughness, making the quality of the formed patterns insufficient to meet the requirements of current patterning processes. Therefore, to match EUV lithography, it is necessary to develop patterning materials with high sensitivity and high pattern resolution under 1–15 nm soft X-ray irradiation conditions to achieve high-efficiency, high-quality patterning processes. Summary of the Invention

[0004] This application provides a patterning material that exhibits high sensitivity and high pattern resolution under 1-15nm soft X-ray irradiation, enabling high-efficiency and high-quality patterning processes.

[0005] Specifically, the first aspect of this application provides a patterning material comprising a polysiloxane, wherein the polysiloxane includes at least one cyclic structure composed of repeating Si-O bonds and organic groups attached to Si atoms in the cyclic structure; wherein at least one Si atom in the cyclic structure is partially replaced by a metal element, and / or at least one organic group contains a halogen element. This patterning material uses a polysiloxane with a cyclic structure as the main material. The cyclic structure allows for better control of the small molecular size of the polysiloxane, thereby improving the resolution of the pattern obtained by the patterning process and reducing the roughness of the pattern edges. Furthermore, introducing metal elements and / or halogen elements into the polysiloxane molecular structure can improve the photosensitivity of the patterned material. Using the patterning material of this application in the fabrication of electronic components such as chips can yield high-quality patterns, improving component precision and fabrication efficiency.

[0006] In some embodiments of this application, at least a portion of the Si atoms in at least one ring structure are replaced by a metal element. The metal element includes one or more of transition metals, Group III metals, Group IV metals, Group V metals, and Group VI metals. Metal elements have abundant outer electrons, which can interact with soft X-ray photons and excite high-energy photoelectrons. These high-energy photoelectrons interact with surrounding atoms, molecules, and chemical bonds, promoting chemical reactions, i.e., promoting chemical changes that ultimately alter the solubility of the patterned material. Specifically, the metal element may be one or more of Sn, Hf, Zr, Ti, and Sb.

[0007] In other embodiments of this application, at least one of the organic groups comprises a halogen element. The halogen element may be F, Cl, Br, or I. Halogen elements have high absorption efficiency for soft X-ray photons, which can improve the photosensitivity of patterned materials.

[0008] In other embodiments of this application, some Si atoms in the cyclic structure are replaced by metal elements; simultaneously, at least one of the organic groups contains a halogen element. The substitution of metal elements in the cyclic structure and the introduction of halogen elements into the organic groups can effectively enhance the photosensitivity of the patterned material through a dual effect.

[0009] In this embodiment, the polysiloxane has a nanoscale size; specifically, the molecular size of the polysiloxane is 0.2 nm-5 nm. Smaller molecular size is advantageous for obtaining high-resolution, low-edge-roughness, high-quality patterns. Specifically, smaller molecular size means that during chemical changes, the new structure formed by the polymerization of multiple structural units is smaller, and the new structure formed after the destruction of a single structural unit is even smaller. This facilitates the formation of high-precision patterns and improves the controllability of pattern edge roughness.

[0010] In this embodiment, the polysiloxane has one or more of the aforementioned cyclic structures; that is, the polysiloxane can have a monocyclic or polycyclic structure. A monocyclic structure refers to a polysiloxane molecule with only one repeating Si-O bond. A polycyclic structure, on the other hand, refers to a polysiloxane molecule with multiple repeating Si-O bonds. The connection methods of the multiple rings can be different; specifically, a polycyclic structure can be a spirocyclic ring, a fused ring, or a polyhedral structure (i.e., a cage-like structure), etc.

[0011] In this embodiment of the application, the general formula of the polysiloxane can be represented as Si. a O b M c R dIn this system, M represents the metal element that substitutes for the Si atom in the cyclic structure, R represents the organic group attached to the Si atom, a and d are integers greater than or equal to 1, b is an integer greater than or equal to 2, and c is an integer greater than or equal to 0, and a + c ≥ 2. When d is greater than or equal to 2, multiple R groups can be the same or different organic groups, and at least one organic group R contains a halogen.

[0012] In some embodiments of this application, the main molecular structure of the polysiloxane is shown in formula (I):

[0013]

[0014] In formula (I), R is the organic group, and multiple Rs can be the same or different organic groups, n is an integer greater than or equal to 1, some Si atoms in the cyclic structure are replaced by the metal element, and / or at least one of the organic groups R contains a halogen element.

[0015] In other embodiments of this application, the main molecular structure of the polysiloxane is shown in formula (II):

[0016]

[0017] In formula (II), R is the organic group, and multiple Rs can be the same or different organic groups, x is an integer greater than or equal to 0, y is an integer greater than or equal to 1, z is an integer greater than or equal to 0, at least one Si atom in the cyclic structure is replaced by the metal element, and / or at least one of the organic groups R contains a halogen element.

[0018] In other embodiments of this application, the main molecular structure of the polysiloxane is shown in formula (III):

[0019]

[0020] In formula (III), R is the organic group, m is an integer greater than or equal to 1, at least one Si atom in the cyclic structure is replaced by the metal element, and / or at least one of the organic groups R contains a halogen element.

[0021] In this embodiment, the organic group has 1-20 carbon atoms. A smaller number of carbon atoms allows for better control over the size of siloxane compound molecules.

[0022] In this embodiment, the organic group may be a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted hydroxyl group, an organosilicon group, or an organic group containing a metal atom. The organic group may contain hydroxyl, cyano, carbonyl, carboxyl, ether bond, ester bond, sulfonate bond, carbonic acid, ester bond, lactone ring, sulfonyl lactone ring, carboxylic anhydride, etc. When the polysiloxane includes multiple organic groups, the multiple organic groups may be the same or different organic groups.

[0023] In this application, the organic groups include reactive end groups. Reactivity of the end groups enhances the ability of the polysiloxane to chemically react with adjacent molecules during and after exposure. In some embodiments of this application, the end groups may be hydroxyl, carboxyl, aldehyde, amino, saturated hydrocarbon, unsaturated hydrocarbon, azide, mercapto, or epoxy groups.

[0024] In this embodiment of the application, the elemental composition of the organic group can be C e H f X g O h N i P j S o Si p M' q In this equation, X is a halogen atom, M' represents the second metallic element, e is an integer greater than or equal to 1, and f, g, h, i, j, o, p, q are integers greater than or equal to 0, and (f+g+h+i+j+o+p+q)≥e. e can be an integer from 1 to 20.

[0025] In this embodiment of the application, the atoms directly bonded to the Si atoms in the organic group are halogen atoms, O, C, N, P, S, or Si atoms. Stable chemical bonds are formed between these atoms and the Si atoms in the ring structure, thereby stably binding the organic group to the ring structure.

[0026] In this embodiment, the patterning material further includes a solvent, which can be one or more organic solvents selected from aliphatic hydrocarbons, aromatic hydrocarbons, halogenated hydrocarbons, alcohols, ethers, esters, ketones, glycol derivatives, acetonitrile, pyridine, etc. The solvent can dissolve the polysiloxane to form a coating material. The polysiloxane in this embodiment has good solubility and can be dissolved in most organic solvents. It exhibits good coating performance as a patterning material, forming a smooth film surface with easily adjustable film thickness. The development conditions meet the requirements of the patterning process, facilitating its application.

[0027] In this embodiment of the application, in addition to the solvent, the polysiloxane accounts for more than 50% of the mass fraction in the patterning material. A higher polysiloxane content effectively ensures the high efficiency and high quality of the patterning process.

[0028] In this embodiment, the patterned material may also include other components as needed, which may include one or more of stabilizers, dispersants, photoacids, and quenchers. The addition of other components with different properties can effectively improve the overall performance of the patterned material. In this embodiment, based on 100 parts by weight of the main material, other components may be 0.1-40 parts by weight.

[0029] In this embodiment, the patterning material is sensitive to 1-15nm X-rays, and the exposure energy required to act on the patterning material during patterning is less than 100mJ / cm². 2 High sensitivity allows patterning materials to be patterned at lower exposure energies, enabling patterning through thinner patterning material films and requiring less exposure time, thereby improving patterning efficiency.

[0030] Secondly, embodiments of this application also provide a patterned thin film, which is formed using the patterning material described in the first aspect of this application. This patterned thin film can be used as a high-precision mask in the patterning process of integrated circuits. The pattern of the patterned thin film can be transferred to a substrate such as a silicon wafer by etching, so that a preset pattern is formed on the substrate.

[0031] Because the patterned material in this application embodiment is highly sensitive to light in the 1-15nm X-ray wavelength range, and its molecular size can be controlled to a small size, the patterned film obtained by the patterned material in this application embodiment through a patterning process such as drying and developing under irradiation with 1-15nm soft X-rays as the exposure light source has a high resolution and low edge roughness. Specifically, in the embodiments of this application, the resolution of the pattern on the patterned film is in the range of 0.2nm-100nm. The edge roughness is in the range of 2%-30% of the resolution.

[0032] A third aspect of this application also provides a pattern forming method, including:

[0033] The patterned material described in the first aspect of the present application is coated on a substrate to form a patterned material film layer on the substrate;

[0034] The patterned material film is exposed to an exposure light source using a photomask;

[0035] A developer is used to develop the exposed patterned material film layer to form a patterned thin film on the substrate.

[0036] In this embodiment of the application, the pattern forming method further includes etching the substrate after development to transfer the pattern of the patterned thin film onto the substrate. In this embodiment of the application, the substrate may be a silicon wafer or a silicon substrate with a metal layer, a dielectric layer, a surface modification layer, or a combination of layers disposed on its surface.

[0037] In this embodiment of the application, the above-described pattern forming method further includes baking the patterned material film layer after exposure and before development. The baking temperature is between 60°C and 200°C, and the baking time is between 20s and 120s. This baking operation can promote the further completion of any incomplete chemical reactions in the film layer.

[0038] In this embodiment, the exposure light source is 1nm-15nm X-rays. In this embodiment, the exposure energy of the exposure light source is less than 100mJ / cm². 2 .

[0039] This application also provides a method for fabricating an electronic component, including the pattern forming method described in the third aspect of this application, wherein the electronic component has a pattern formed by the patterned thin film. The electronic component includes chips, etc.

[0040] The patterning material provided in this application uses a polysiloxane with a specific structure as the main material. Since the polysiloxane with the specific structure has high sensitivity to 1-15nm X-rays, high resistance to etching, and small molecular size, the patterning material of this application can be used in the patterning process to form high-resolution, low-edge roughness high-quality patterns under irradiation by a 1-15nm soft X-ray exposure source. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of a patterned process flow provided in an embodiment of this application;

[0042] Figure 2 This is a schematic diagram of a patterned process flow provided in another embodiment of this application. Detailed Implementation

[0043] The embodiments of this application are described below with reference to the accompanying drawings.

[0044] The most important process in chip manufacturing is currently the patterning process. The patterning process involves shining a light source through a photomask onto a substrate surface coated with a thin film of photoresist. This causes a chemical reaction in the exposed areas of the photoresist, which is then dissolved and removed using development techniques (the former is called positive photoresist, and the latter negative photoresist). This allows the pattern on the photomask to be copied onto the photoresist film, and finally, the pattern is transferred to the substrate using etching techniques. Using a 1-15nm soft X-ray exposure source is the most critical technical element in the patterning process. However, existing patterning materials cannot simultaneously meet the requirements of high sensitivity and high pattern resolution under this exposure source. Therefore, this application provides a patterning material that exhibits high sensitivity and high pattern resolution under 1-15nm soft X-ray irradiation, enabling a high-efficiency, high-quality patterning process.

[0045] Specifically, the patterned material provided in this application includes a polysiloxane, which comprises at least one cyclic structure composed of repeating Si-O bonds and organic groups attached to the Si atoms in the cyclic structure; wherein, a portion of the Si atoms in at least one cyclic structure are replaced by a metal element, and / or at least one organic group contains a halogen element. The cyclic structure composed of repeating Si-O bonds is a cyclic structure composed of alternating bonds between silicon atoms and oxygen atoms.

[0046] In some embodiments of this application, at least a portion of the Si atoms in the ring structure are replaced by a metal element; that is, only the Si atoms in the ring structure are substituted with a metal element, while no halogen is introduced into the organic groups. The metal element includes one or more of transition metals, Group III metals, Group IV metals, Group V metals, and Group VI metals. The metal element has abundant outer electrons, which can interact with soft X-ray photons and excite high-energy photoelectrons. These high-energy photoelectrons interact with surrounding atoms, molecules, and chemical bonds, promoting chemical reactions, i.e., promoting chemical changes that ultimately alter the solubility of the patterned material. Specific examples of the metal element include one or more of Sn, Hf, Zr, Ti, and Sb.

[0047] In other embodiments of this application, at least one organic group contains a halogen element; that is, only the organic group is introduced with a halogen element, and the Si atoms in the cyclic structure are not substituted with metal elements. At least one of the organic groups in all cyclic structures of the polysiloxane molecule contains a halogen element. The introduction of halogen elements can improve the sensitivity of patterned materials under soft X-ray exposure. Specifically, halogen elements have higher absorption efficiency for photons in the soft X-ray wavelength range than C, H, O, and Si elements under soft X-ray exposure conditions. When photons are absorbed by halogen elements and inner-shell electrons are excited, electron holes are formed, which then form free radicals and a large number of high-energy free electrons (typically between 10 and 100 eV, depending on the incident photon energy) during energy dissipation. The free radicals and high-energy free electrons interact with surrounding chemical bonds and chemical groups, resulting in the breaking of chemical bonds and the formation of new chemical bonds, leading to changes in molecular chemical properties and consequently, changes in solubility, thus possessing the basic mechanism of action of patterned materials. In embodiments of this application, at least one organic group attached to the Si atom contains a halogen element. When a polysiloxane contains multiple organic groups, some of these groups may contain halogens, or all of them may contain halogens. Compared to metal introduction schemes, halogen introduction avoids the risk of substrate contamination that metal introduction might otherwise cause.

[0048] In other embodiments of this application, some Si atoms in the cyclic structure are replaced by metal elements; simultaneously, at least one organic group contains a halogen element. The substitution of metal elements in the cyclic structure and the introduction of halogen elements in the organic group can effectively enhance the photosensitivity of the patterned material through a dual effect.

[0049] In this application, the polysiloxane has a nanoscale size. In some embodiments, the molecular size of the polysiloxane is 0.2 nm-5 nm. In other embodiments, the molecular size of the polysiloxane is 0.5 nm-4 nm, 1 nm-3 nm, or 2 nm-2.5 nm. Smaller molecular sizes are advantageous for obtaining high-resolution, low-edge-roughness, high-quality patterns. Specifically, smaller molecular sizes mean that when multiple structural units polymerize during chemical changes, the new structure formed is smaller, and the new structure formed after the destruction of a single structural unit is even smaller. This is beneficial for forming high-precision patterns and improving the controllability of pattern edge roughness. In this application, the molecular weight of the polysiloxane can be 130–400,000.

[0050] In this embodiment, the polysiloxane may have one or more cyclic structures. That is, the polysiloxane may have a monocyclic or polycyclic structure. A monocyclic structure refers to a polysiloxane molecule with only one repeating Si-O bond. A polycyclic structure refers to a polysiloxane molecule with multiple repeating Si-O bonds. The linkage of the multiple rings can vary; specifically, a polycyclic structure may be a spirocyclic ring, a fused ring, or a polyhedral structure (i.e., a cage-like structure).

[0051] In this embodiment of the application, in the ring structure, one or more Si atoms are attached to at least one of the aforementioned organic groups. That is, the ring structure may have only one Si atom attached to an organic group, or multiple Si atoms may have organic groups attached to them. Each Si atom may have one or two organic groups attached to it. Increasing the number of organic groups can enhance the solubility of the patterned material.

[0052] In some embodiments of this application, the polysiloxane has a monocyclic structure, and its main molecular structure is shown in formula (I):

[0053]

[0054] In formula (I), R represents an organic group, and multiple R groups can be the same or different organic groups. n is an integer greater than or equal to 1. Some Si atoms in the cyclic structure are replaced by metal elements, and / or at least one organic group R contains a halogen element. Among the multiple organic groups, one or more organic groups may contain a halogen element. In some embodiments, n can be an integer in the range of 2-8, specifically, for example, 2, 3, 4, 5, 6, 7, or 8.

[0055] In other embodiments of this application, the polysiloxane has a polycyclic structure, and its main molecular structure is shown in formula (II):

[0056]

[0057] In formula (II), R represents an organic group, and multiple Rs can be the same or different organic groups. x is an integer greater than or equal to 0, y is an integer greater than or equal to 1, z is an integer greater than or equal to 0, at least one Si atom in the cyclic structure is replaced by a metal element, and / or at least one organic group R contains a halogen element. It is understood that when the polysiloxane has a polycyclic structure, some or all of the Si atoms in the cyclic structure may be replaced by a metal element. Similarly, among the multiple organic groups, one or more organic groups may contain a halogen element. In some embodiments, x can be an integer in the range of 1-3, specifically 1, 2, 3; y can be an integer in the range of 1-5, specifically 1, 2, 3, 4, 5; and z can be an integer in the range of 1-5, specifically 1, 2, 3, 4, 5.

[0058] In other embodiments of this application, the polysiloxane has a monocyclic or polycyclic structure, and the main molecular structure of the polysiloxane can be as shown in formula (III):

[0059]

[0060] In formula (III), R is an organic group, m is an integer greater than or equal to 1, at least one Si atom in the cyclic structure is replaced by a metal element, and / or at least one organic group R contains a halogen element. Understandably, when the polysiloxane has a polycyclic structure, some or all of the Si atoms in the cyclic structure may be replaced by a metal element. Similarly, among the multiple organic groups, one or more organic groups may contain a halogen element. In some embodiments, m may be an integer in the range of 2-8, and the polysiloxane has a polycyclic structure, specifically 2, 3, 4, 5, 6, 7, or 8.

[0061] In some embodiments of this application, the polysiloxane may also have one or more cyclic structures formed by repeated Si-O bonds, as well as incompletely cyclic structures formed by repeated Si-O bonds, that is, in the polycyclic polysiloxanes shown in formulas (II) and (III), some of the silicon and oxygen atoms in the cyclic structures are not bonded. Specifically, such polysiloxanes include, but are not limited to, the polysiloxanes shown in formula (IV):

[0062]

[0063] In formula (IV), R is an organic group, and multiple Rs can be the same or different organic groups. At least one Si atom in the cyclic structure is replaced by a metal element, and / or at least one organic group R contains a halogen element.

[0064] In this application, the general formula of polysiloxane can be represented as Si. a O b Mc R d In this context, M represents the metal element that substitutes for the Si atom in the cyclic structure, R represents the organic group attached to the Si atom, a and d are integers greater than or equal to 1, b is an integer greater than or equal to 2, and c is an integer greater than or equal to 0, where a + c ≥ 2. When d is greater than or equal to 2, multiple R groups can be the same or different groups. In some embodiments of this application, a + c ≥ 3, and b is an integer greater than or equal to 3.

[0065] In this embodiment of the application, the elemental composition of the organic group can be C e H f X g O h N i P j S o Si p M' q In this embodiment, X represents a halogen atom, M' represents a second metal element, e is an integer greater than or equal to 1, and f, g, h, i, j, o, p, and q are integers greater than or equal to 0, and (f+g+h+i+j+o+p+q)≥e. M' can be one or more of transition metal elements, group III metal elements, group IV metal elements, group V metal elements, and group VI metal elements, specifically, it can be Sn, Hf, Zr, Ti, or Sb. In the embodiments of this application, in order to better control the overall molecular size of the polysiloxane, the number of carbon atoms in the organic group can be controlled within the range of 1-20, that is, e can be an integer within the range of 1-20.

[0066] In this application, the organic group can be a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted hydroxyl group, an organosilicon group, or an organic group containing a metal atom. In this application, the organic group can contain hydroxyl, cyano, carbonyl, carboxyl, ether bond, ester bond, sulfonate bond, carbonic acid, lactone ring, sulfonyl lactone ring, carboxylic anhydride, etc. In some embodiments of this application, the polysiloxane includes multiple organic groups, which can be the same or different substituted or unsubstituted hydrocarbon groups, substituted or unsubstituted hydroxyl groups, organosilicon groups, or organic groups containing metal atoms. In this application, the substituted or unsubstituted hydrocarbon group can be a straight-chain hydrocarbon group or a branched hydrocarbon group, a saturated or unsaturated hydrocarbon group, or a cyclic hydrocarbon group containing one or more rings. Specifically, substituted or unsubstituted hydrocarbon groups can be substituted or unsubstituted alkyl groups, substituted or unsubstituted alkenyl groups, substituted or unsubstituted alkynyl groups, substituted or unsubstituted aromatic groups (such as phenyl, naphthyl), substituted or unsubstituted aralkyl groups (such as benzyl, phenethyl), substituted or unsubstituted areneyl groups, substituted or unsubstituted arynyl groups, substituted or unsubstituted alkylaryl groups (tolyl), substituted or unsubstituted alkenylaryl groups, substituted or unsubstituted alkynylaryl groups, etc. The substituent groups in substituted hydrocarbon groups can be halogen atoms, oxygen atoms, groups containing oxygen atoms, groups containing nitrogen atoms, groups containing sulfur atoms, etc., to form hydroxyl groups, ethers, esters, acid anhydrides, aldehydes, ketones, carboxylic acids, etc. Specific examples of substituted hydrocarbon groups include haloalkyl groups, aldehyde alkyl groups, carboxyl alkyl groups, hydroxyalkyl groups, ester alkyl groups, acyloxyalkyl groups, aminoalkyl groups, azide alkyl groups, and mercaptoalkyl groups. Haloalkyl groups include haloalkyl groups, haloalkenyl groups, haloalkynyl groups, haloaryl groups, haloaralkyl groups, haloareneyl groups, and haloarynyl groups. Of course, the substituted hydrocarbon group may also contain multiple different substituent groups mentioned above, such as haloaldehyde alkyl, haloacyloxy alkyl, halothiol alkyl, and haloamino alkyl. In this application, the substituted or unsubstituted hydrocarbon oxy group can specifically be a substituted or unsubstituted alkoxy, a substituted or unsubstituted alkenoxy, a substituted or unsubstituted epoxy, a substituted or unsubstituted aromatic epoxy, etc. The substituent group in the substituted hydrocarbon oxy group can be a halogen atom, an oxygen atom, a group containing an oxygen atom, a group containing a nitrogen atom, a group containing a sulfur atom, etc. For example, the substituted hydrocarbon oxy group can be a haloalkoxy, a haloalkenoxy, a haloepoxy, or a haloaromatic epoxy.

[0067] In the embodiments of this application, the group containing halogen elements may be a haloalkyl, haloalkenyl, haloalkynyl, haloaryl, haloaralkyl, haloareneyl, haloarynyl, haloaldehydealkyl, haloacylalkyl, halothiolalkyl, haloaminoalkyl, haloalkoxy, haloalkenoxy, haloepoxy, haloarylepoxy, etc., as well as other organic groups containing halogen elements.

[0068] In the aforementioned halogenated groups, the halogen can be F, Cl, Br, or I. The halogenated groups can introduce halogens into the polysiloxane molecular structure, thereby utilizing the high absorption efficiency of halogen elements for soft X-ray photons to improve the photosensitivity of the patterned material. In other embodiments, the substituted hydrocarbon group may also contain other substituents.

[0069] In embodiments of this application, the organic groups include reactive end groups. In some embodiments of this application, the end groups may be, for example, hydroxyl, carboxyl, aldehyde, amino, saturated hydrocarbon, unsaturated hydrocarbon, azide, mercapto, or epoxy groups. The reactive nature of the end groups enhances the ability of the polysiloxane to chemically react with adjacent molecules during and after exposure.

[0070] In some embodiments of this application, the organic group R may be, for example, but not limited to, an alkyl, alkenyl, alkynyl, or aryl group having 1-20 carbon atoms, or the following groups:

[0071] In this embodiment, the atoms directly bonded to the Si atoms in the organic group can be halogen atoms, O, C, N, P, S, or Si atoms. Stable chemical bonds are formed between these atoms and the Si atoms in the ring structure, thereby stably binding the organic group to the ring structure.

[0072] In some embodiments of this application, the main molecular structure of the polysiloxane can be as shown in formulas (A)-(G):

[0073]

[0074] In formulas (A)-(G), R represents an organic group, and multiple Rs can be the same or different organic groups. In formulas (A)-(G), at least one cyclic structure contains a portion of the Si atoms replaced by a metal element, and / or at least one organic group contains a halogen element. It is understood that when multiple cyclic structures are included, some or all of the Si atoms in the cyclic structures may be replaced by a metal element. Similarly, when multiple organic groups are included, one or more organic groups may contain a halogen element.

[0075] In this embodiment, the patterning material further includes a solvent, which can be one or more organic solvents selected from aliphatic hydrocarbons, aromatic hydrocarbons, alicyclic hydrocarbons, halogenated hydrocarbons, alcohols, ethers, esters, ketones, glycol derivatives, and acetonitrile, pyridine, etc. The solvent can dissolve the aforementioned polysiloxane to form a coating material. The polysiloxane in this embodiment has good solubility and can be dissolved in most organic solvents. It exhibits good coating performance as a patterning material, forming a smooth surface of the patterned material film. The film thickness is easily adjustable, and the development conditions meet the requirements of the patterning process, facilitating its application.

[0076] In this embodiment, excluding the solvent, the polysiloxane accounts for more than 50% of the mass of the patterning material. A higher polysiloxane content effectively ensures the high efficiency and quality of the patterning process. Specifically, excluding the solvent, the mass percentage of polysiloxane in the patterning material can be 55%-99%, 60%-90%, or 70%-80%.

[0077] In this embodiment, the patterning material may also include other components as needed, which may include one or more of stabilizers, dispersants, photoacids, and quenchers. In this embodiment, based on 100 parts by weight of the main material, the other components may be 0.1-40 parts by weight. In some embodiments, based on 100 parts by weight of the main material, the other components may be 1-30 parts by weight or 5-20 parts by weight.

[0078] In this embodiment, the patterning material is sensitive to 1-15nm X-rays, and the exposure energy required to act on the patterning material during patterning is less than 100mJ / cm². 2 High sensitivity allows patterning materials to be patterned at lower exposure energies, enabling patterning through thinner material films and shorter exposure times, thus improving patterning efficiency. In this application, the patterning material can be highly sensitive to X-ray sources of any wavelength within the 1-15 nm range, specifically 1 nm-13.5 nm, 1 nm-10 nm, 1 nm-7 nm, or 3 nm-5 nm. In some embodiments of this application, the required exposure energy applied to the patterning material can be 0.5–50 mJ / cm². 2 .

[0079] In this application, different compound raw materials and different methods can be used to prepare the polysiloxane according to its different structure. The preparation method is simple and can be industrialized. Specifically, one or more siloxane monomers can be used for condensation under acidic or alkaline conditions. The monomers for synthesizing the polysiloxane in this application can be selected from: trialkoxysilane (a) or trichlorosilane (d) with a single organic ligand functional group, diekoxysilane (b) or dichlorosilane (e) with two organic ligand functional groups, monoalkoxysilane (c) or chlorosilane (f) with three organic ligand functional groups, or a mixture of two or three of the above monomers.

[0080]

[0081] In the above structural formulas (a)-(f), R is an organic group directly bonded to Si, and multiple Rs can be the same or different organic groups. In formulas (a)-(c), R' can be, but is not limited to, an alkyl group with 1-20 carbon atoms.

[0082] Taking the synthesis under acidic conditions as an example, the preparation process of the polysiloxane of this application can be as follows: under mechanical stirring, anhydrous ferric chloride is added to a round-bottom flask, followed by concentrated hydrochloric acid, methanol, petroleum ether, and dichloromethane; one or more siloxane monomers (which can be ethoxysilane or chlorosilane), the selection of monomers and molar ratio are determined by the final material structure, the monomers are uniformly dissolved in 5 to 20 times their volume of petroleum ether, the monomer-containing solution is placed in a constant pressure dropping funnel, and added dropwise to the round-bottom flask reactor over 5 to 20 hours, the reaction is continuously stirred at room temperature for 15 to 48 hours, and then reacted at 60°C for 5 to 15 hours to allow it to react fully, the mixture is filtered and separated, the upper organic layer is transferred to a round-bottom flask, sodium carbonate and calcium chloride are added to remove acid, the mixture is stirred for 10 to 20 hours, filtered, the filtrate is concentrated under reduced pressure using a rotary evaporator, and then placed in a 4°C refrigerator for crystallization. The precipitated crystals were recrystallized with a mixed solution of dichloromethane and ethanol and purified to obtain the target product containing at least one cyclic structure composed of repeating Si-O bonds and organic groups from the monomer.

[0083] In this embodiment, the synthesized polysiloxane can also be modified by selectively modifying the end groups to prepare polysiloxanes with various different organic groups. Alternatively, polysiloxanes, such as octasesquivinylsiloxane, can be directly purchased from the market. The vinyl groups of octasesquivinylsiloxane can react with alkyl siloxanes under Pt catalysis. Hydrosiloxanes modified with different organic groups can be selected to react with these alkyl siloxanes, thereby modifying their end groups.

[0084] The patterning material in this application uses polysiloxane as the main material. Polysiloxane has a cyclic structure, which allows for better control of molecular size, resulting in a smaller molecular size. This improves the resolution of the pattern obtained through the patterning process, reduces the edge roughness of the pattern, and avoids the problem of high edge roughness and low pattern quality / insufficient resolution caused by large molecular size of the patterning material. Furthermore, introducing metal elements and / or halogen elements into the polysiloxane molecular structure can improve the photosensitivity of the patterning material, enabling it to be used with 1-15nm soft X-ray exposure sources. This allows for higher exposure efficiency with lower exposure energy. Using the patterning material of this application in the fabrication of electronic components such as chips can yield high-quality patterns, improving component precision and fabrication efficiency.

[0085] Accordingly, this application also provides a patterned thin film, which is formed using the patterning material described above in this application. This patterned thin film can be used as a high-precision mask in the patterning process of integrated circuit fabrication. The pattern of the patterned thin film can be transferred to a substrate such as a silicon wafer by etching, so that a preset pattern is formed on the substrate. Because the patterning material of this application has high sensitivity to light in the 1-15nm wavelength range and its molecular size can be controlled to a small size, the patterned thin film obtained by the patterning material provided in this application through a patterning process such as drying and development under irradiation with 1-15nm soft X-rays as the exposure light source has a high resolution and low edge roughness. Specifically, in the embodiments of this application, the resolution of the pattern on the patterned thin film is in the range of 0.2nm-100nm. The edge roughness is 2%-30% of the resolution. In some embodiments, the pattern resolution can be 3nm-80nm; in other embodiments, the pattern resolution can be 5nm-50nm; and in still other embodiments, the pattern resolution can be 10nm-20nm.

[0086] This application also provides a pattern forming method, such as... Figure 1 and Figure 2 As shown, its patterning process includes:

[0087] S101. The patterned material described in the embodiments of this application is coated on a substrate to form a patterned material film layer on the substrate;

[0088] Specifically, one or more polysiloxanes from the embodiments of this application may be mixed in a certain proportion and dissolved in a suitable solvent to form a solution of a certain concentration. One or more other components, such as stabilizers, dispersants, photoacids, and quenchers, may be selectively added to the solution. In the embodiments of this application, the solvent may be one or more of aliphatic hydrocarbons, aromatic hydrocarbons, alicyclic hydrocarbons, halogenated hydrocarbons, alcohols, ethers, esters, ketones, glycol derivatives, and organic solvents such as acetonitrile and pyridine. In the embodiments of this application, in addition to the solvent, the weight percentage of the other components relative to 100 parts by weight of polysiloxane may be 0.1-40 parts by weight. The amount of solvent added can be adjusted according to the required film thickness; generally, a higher solution concentration corresponds to a thicker film.

[0089] In this embodiment, the substrate can be selected according to specific needs, and can be a silicon wafer or a silicon wafer covered by other coatings. Other coatings can be anti-reflective coatings, anti-etching coatings, epitaxial layers, metal layers, dielectric layers, surface modification layers, or matching layers. Typically, other coatings can be obtained by pre-treating the substrate. Pre-treatment methods can include: hydrophilic activation of the silicon wafer substrate with O2 plasma, or hydrophobic treatment of the substrate surface using hexamethyldisilazane (HMDS), or adding a bottom anti-reflection coating (BARC), a bottom carbon coating (Spin on carbon, SOC), or a bottom silicon coating (Spin on glass, SOG).

[0090] Depending on the size of the substrate, a certain volume of solution is spin-coated onto the substrate to form a patterned material film with a thickness of less than 100 nm. Specifically, the film thickness can be, for example, 0.2 nm to 40 nm. The surface roughness of the film can be less than 2 nm. Because the polysiloxane in this embodiment has high sensitivity, a smaller thickness can be set to achieve high-quality patterning.

[0091] In this embodiment, after spin coating and before exposure, a baking process can be selectively performed to remove the solvent remaining in the patterned material film. The baking temperature can be between 60°C and 200°C, and the baking time can be between 20s and 120s.

[0092] S102. The patterned material film is exposed to an exposure light source through a photomask;

[0093] Specifically, the patterned material film can be selectively irradiated by any single wavelength or mixed wavelength X-ray within the 1-15nm X-ray range, reflected by a mask, to transfer the pattern on the mask onto the patterned material film. The exposure energy of the exposure source can be below 100mJ / cm². 2 When patterned material films are selectively exposed to a soft X-ray source with a wavelength range of 1–15 nm, the exposed portions undergo a chemical reaction, resulting in changes in their solubility.

[0094] In this embodiment, the patterned material film layer can be selectively baked after exposure and before development. The baking temperature is between 60°C and 200°C, and the baking time is between 20 seconds and 120 seconds. This baking operation can promote the further completion of any incomplete chemical reactions in the film layer.

[0095] S103. The exposed patterned material film layer is developed using a developer to form a patterned thin film on the substrate.

[0096] Because the chemical properties of the exposed portion of the patterned material film change, its solubility alters. The exposed patterned material is then cleaned with a developing solution for 10–300 seconds, which can be a single-step or multi-step cleaning process. After cleaning, the exposed portion of the patterned material film is washed away, resulting in positive development and the formation of a positive pattern. The patterned material is then called a positive patterned material. Figure 1 As shown; the irradiated portion was not washed away, resulting in negative development and forming a negative pattern. The patterning material is called a negative patterning material, such as... Figure 2 As shown.

[0097] The developing process can select a suitable developing solution based on the properties of the patterned material. The developing solution can be selected from organic solutions, inorganic solutions, pure solvents, mixed solvents, solvents containing additives, etc. Specifically, in some embodiments of this application, the developing solution can be a 0.5-5% aqueous solution of tetramethylammonium hydroxide (TMAH), or it can be an organic solvent such as ketones, alcohols, ethers, esters, lactones, or high-boiling-point alcohols. Ketones can be, for example, cyclohexanone and methyl-2-n-pentyl ketone; alcohols can be, for example, 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and diacetone alcohol; ethers can be, for example, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, and ethylene glycol monoethyl ether. The solvents used include propylene glycol dimethyl ether and diethylene glycol dimethyl ether; esters such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol monotert-butyl ether acetate; lactones such as γ-butyrolactone; and high-boiling-point alcohol solvents such as diethylene glycol, propylene glycol, glycerol, 1,4-butanediol, and 1,3-butanediol. The developer can be a mixture of one or more of the above solvents. The contact time between the developer and the exposed film layer can be 20s to 120s. After development, a water rinsing process can be selectively added, with a rinsing time of 20s to 120s; alternatively, a baking process can be selectively added, with a baking temperature between 60 and 200°C and a baking time between 20s and 120s.

[0098] After development, the resulting pattern resolution is between 0.2 nm and 100 nm, and the edge roughness is between 2% and 30% of the pattern resolution. In some embodiments of this application, a pattern with a resolution of 0.2 nm to 20 nm can be obtained.

[0099] S104. After development, the substrate is etched to transfer the pattern of the patterned thin film onto the substrate.

[0100] The pattern formed by the patterned material selectively protects the underlying substrate material during the etching process. Under certain etching conditions, both the patterned material and the unprotected substrate material are etched, but the etching rate is slower in the protected areas than in the unprotected areas, ultimately forming a pattern on the substrate material. The etching process can specifically involve HF etching, ion etching, or ion implantation to transfer the pattern onto the substrate.

[0101] This application also provides a method for fabricating an electronic component, including the patterning method described above in this application, wherein the electronic component has a pattern formed by a patterned thin film. The electronic component may include chips, etc. During chip fabrication, other functional layers can be fabricated after the patterning process is completed.

[0102] The technical solutions of the embodiments of this application will be further described below through specific examples.

[0103] Example 1

[0104] (1) 1 mole of p-fluorophenylcarboxaldehyde, 2.4 moles of methyltriphenylphosphine bromide, and 2.9 moles of potassium tert-butoxide were added to anhydrous and oxygen-free tetrahydrofuran (THF) solvent, and stirred for 4 h under argon protection at room temperature. The mixture was then extracted by rotary evaporation with water and diethyl ether. The organic layer was dried with magnesium sulfate (MgSO4) and dissolved in n-hexane. The resulting liquid was concentrated by rotary evaporation and purified by column chromatography to obtain p-fluorophenylenediene.

[0105] (2) 1.2 moles of trichlorosilane and 1 mole of p-fluorostyrene obtained in step (1) were reacted under reflux in THF solvent at 80°C for 6 h with 0.04 moles of H2PtCl6 catalyst. The trichlorosilane monomer was obtained by vacuum distillation.

[0106] The synthesis routes for steps (1) and (2) are shown in equation (V):

[0107]

[0108] (3) Add 1.6 moles of anhydrous FeCl3 and 2 moles of concentrated hydrochloric acid to a three-necked flask and dissolve them by mechanical stirring in a mixed solvent of methanol, petroleum ether, and dichloromethane in a volume ratio of 2:4:1. Take 1 mole of the trichlorosilane monomer obtained in step (2) and dissolve it to prepare a 10% petroleum ether solution. Add the monomer solution dropwise to the three-necked flask over 10 hours using a constant pressure funnel, stir at room temperature for 24 hours, and then react at 60°C for 10 hours to allow the reaction to proceed fully. Filter and separate the liquids, transfer the upper organic layer to an Erlenmeyer flask, add sodium carbonate and calcium chloride to remove acid, stir for 12 hours, filter, concentrate the filtrate under reduced pressure using a rotary evaporator, and place it in a 4°C refrigerator for crystallization. Recrystallize the precipitated crystals with a mixed solution of dichloromethane and ethanol to purify and obtain polysiloxane. The reaction route is shown in formula (VI).

[0109]

[0110] The prepared polysiloxane has polyoctasesquioxane as the main structure and introduces p-fluorostyrene substituent groups, with a molecular size between 0.3 and 0.7 nm.

[0111] (4) The fluorostyrene polyoctasesquioxane obtained in step (3) is dissolved in isopropanol solution to prepare a solution with a concentration of 10 mg / mL. After filtration through a polytetrafluoroethylene (PTFE) filter membrane, it is spin-coated onto a silicon wafer substrate pretreated with HMDS to form a patterned material film layer with a thickness of 10–30 nm. At a lower energy, 13.5 nm soft X-rays are selectively irradiated onto the surface of the patterned material film layer under the protection of a photomask. After exposure and development, the patterned material film layer can form a patterned structure with a thickness of less than 30 nm, achieving the requirements of high sensitivity and high pattern resolution. This is because the polysiloxane in this embodiment has a large number of fluorine atoms and therefore has high soft X-ray sensitivity, which can absorb more soft X-ray photons. The double bond connected to the fluorophenyl group can accelerate the polymerization reaction through free radical reaction, better improve the photochemical reaction efficiency, and further improve the photosensitivity of the patterned material. Specifically, during the exposure process, when irradiated with 13.5nm wavelength rays, photons are mainly absorbed by the fluorobenzene ring, which excites high-energy photoelectrons. The photoelectrons further initiate the polymerization of double bond free radicals, which in turn induces the further polymerization of the nanostructure. The reaction process is shown in formula (VII).

[0112]

[0113] Wherein, hexahedron represents the three-dimensional structure of the main eight-part silsesquioxane, and R represents p-fluorostyrene:

[0114]

[0115] (5) After selective irradiation by X-rays, the patterned material film undergoes a solubility change. After being cleaned by a developing solution made of a mixture of isopropanol and water, the unirradiated parts are washed away, while the irradiated parts remain, forming a negative pattern and completing the patterning process.

[0116] (6) The silicon wafer substrate is etched by an oxygen ion etching step to form a negative pattern on the silicon wafer substrate.

[0117] Example 2

[0118] Using the p-fluorostyrene polyoctasesquioxane prepared in Example 1 as a raw material, it was modified to obtain the modified polysiloxane. The specific steps included:

[0119] (1) 10 moles of dimethyl mercaptosilane and 1 mole of p-fluorostyrene polyoctasesquioxane were reacted under reflux in THF solvent at 80°C for 6 h with 0.32 moles of H2PtCl6 catalyst. The target product was obtained by vacuum distillation. The synthetic route is shown in formula (VIII).

[0120]

[0121] (2) A patterned material host material was prepared by mixing the thiol-terminated polysiloxane shown in formula (VIII) with the p-fluorostyrene polyoctasesquioxane prepared in Example 1 at a molar ratio of 1:1. The mixture was then dissolved and spin-coated to form a 15 nm thick film on a silicon wafer substrate pretreated with HMDS. At a lower energy, 13.5 nm soft X-rays were selectively irradiated onto the surface of the patterned material film under the protection of a photomask. After exposure and development, the patterned material film could form patterned structures smaller than 0.2-20 nm, achieving high sensitivity and high pattern resolution. During the exposure process, the polysiloxane could undergo free radical polymerization, and the reaction mechanism is shown in formula (IX).

[0122]

[0123] (3) After selective irradiation by X-rays, the patterned material film undergoes a solubility change. After being cleaned by a developing solution made of a mixture of isopropanol and water, the unirradiated parts are washed away, while the irradiated parts remain, forming a negative pattern and completing the patterning process.

[0124] (4) The silicon wafer substrate is etched by an oxygen ion etching step to form a negative pattern on the silicon wafer substrate.

[0125] Example 3

[0126] (1) Take 1 mole of trihydroxyisopropylsilsesquioxane (available commercially) and 5 moles of triethylamine, and mix them in a three-necked flask using tetrahydrofuran solvent; take 1 mole of isopropyltin trichloride and dissolve it in tetrahydrofuran, and gradually add the isopropyltin trichloride tetrahydrofuran solution to the three-necked flask under stirring. React at 25°C for 8–12 h. After extraction with n-hexane, the resulting solution is crystallized at -30°C to obtain a colorless crystalline powder. The reaction process is shown in formula (X):

[0127]

[0128] (2) The product obtained in step (1) is dissolved and spin-coated to form a 15 nm thick film on a silicon wafer substrate pretreated with HMDS. The film is then selectively exposed to 13.5 nm soft X-rays. During the exposure process, the polysiloxane can undergo free radical polymerization. The reaction mechanism is shown in formula (XI):

[0129]

[0130] (3) After selective irradiation by X-rays, the patterned material film undergoes a solubility change. After being cleaned with TMAH developer, the unirradiated parts are washed away, while the irradiated parts remain, forming a negative pattern and completing the patterning process.

[0131] (4) The silicon wafer substrate is etched by an oxygen ion etching step to form a negative pattern on the silicon wafer substrate.

[0132] In this embodiment, different polysiloxanes undergo free radical polymerization upon illumination in the film layer, resulting in different chemical reaction rates and consequently, varying photosensitivity. Specifically, depending on the actual process conditions, different end groups can be designed into the organic groups to adjust the photosensitivity of the patterned material.

Claims

1. A patterned material, characterized in that, The invention includes a polysiloxane, wherein the polysiloxane comprises at least one cyclic structure consisting of repeating Si-O bonds and an organic group attached to the Si atoms in the cyclic structure; wherein at least one of the organic groups is a p-fluorostyrene group. .

2. The patterned material as described in claim 1, characterized in that, At least one Si atom in the ring structure is replaced by a metal element; wherein the metal element includes one or more of transition metal elements, group III metal elements, and group IV metal elements.

3. The patterned material as described in claim 1, characterized in that, At least one Si atom in the ring structure is replaced by a metal element; the metal element is one or more of Sn, Hf, Zr, Ti, and Sb.

4. The patterned material as described in claim 1, characterized in that, The molecular size of the polysiloxane is 0.2nm-5nm.

5. The patterned material as described in claim 1, characterized in that, The general formula of the polysiloxane is Si a O b M c R d In this context, M represents a metallic element, R represents the organic group, a and d are integers greater than or equal to 1, b is an integer greater than or equal to 2, c is an integer greater than or equal to 0, and a+c≥2.

6. The patterned material as described in claim 5, characterized in that, The molecular weight of the polysiloxane is 130-400,000.

7. The patterned material according to any one of claims 1-3, characterized in that, The main molecular structure of the polysiloxane is shown in formula (Ⅰ): Equation (I); In formula (I), R is the organic group, n is an integer greater than or equal to 1, and at least one of the organic groups R is the p-fluorostyrene group.

8. The patterned material as described in claim 7, characterized in that, The n is an integer in the range of 2 to 8.

9. The patterned material according to any one of claims 1-3, characterized in that, The main molecular structure of the polysiloxane is shown in formula (II): Formula (II); In formula (II), R is the organic group, x is an integer greater than or equal to 0, y is an integer greater than or equal to 1, z is an integer greater than or equal to 0, and at least one of the organic groups R is the p-fluorostyrene group.

10. The patterned material as described in claim 9, characterized in that, x is an integer in the range of 1-3, y is an integer in the range of 1-5, and z is an integer in the range of 1-5.

11. The patterned material according to any one of claims 1-3, characterized in that, The main molecular structure of the polysiloxane is shown in formula (III): Formula (III); In formula (III), R is the organic group, m is an integer greater than or equal to 1, and at least one of the organic groups R is the p-fluorostyrene group.

12. The patterned material as claimed in claim 11, characterized in that, The m is an integer in the range of 2 to 8.

13. The patterned material according to any one of claims 1-3, characterized in that, The main molecular structure of the polysiloxane is one or more of formulas (A) to (G): (A)、 (B)、 (C)、 (D)、 (E)、 (F)、 (G) Wherein, R is the organic group, and at least one of the organic groups R is the p-fluorostyrene group.

14. The patterned material as claimed in claim 1, characterized in that, The organic group has 1-20 carbon atoms.

15. The patterned material as claimed in claim 1, characterized in that, The organic group includes one or more of the following groups: 、 、 、 、 、 、 、 、 ； In the organic group, the atom directly bonded to the Si atom is the C atom.

16. The patterned material as claimed in claim 1, characterized in that, The organic groups include reactive end groups, which include hydroxyl, carboxyl, aldehyde, amino, saturated hydrocarbon, unsaturated hydrocarbon, azide, mercapto, or epoxy groups.

17. The patterned material as claimed in claim 1, characterized in that, The organic group has an elemental composition of C. e H f X g O h N i P j S o Si p M' q Where X is a halogen atom, M' represents the second metal element, e is an integer greater than or equal to 1, f, g, h, i, j, o, p, q are integers greater than or equal to 0, and (f+g+h+i+j+o+p+q)≥e.

18. The patterned material as claimed in claim 17, characterized in that, The value of e is an integer in the range of 1 to 20.

19. The patterned material as claimed in claim 17, characterized in that, In the organic group, the atom directly bonded to the Si atom is an O, C, N, P, S, or Si atom.

20. The patterned material as claimed in claim 1, characterized in that, It also includes solvents.

21. The patterned material as claimed in claim 20, characterized in that, Apart from the solvent, the polysiloxane accounts for more than 50% by mass in the patterned material.

22. The patterned material as described in claim 20 or 21, characterized in that, It also includes other components, including one or more of stabilizers, dispersants, photoacids, and quenchers.

23. The patterned material as claimed in claim 1, characterized in that, The patterning material is sensitive to 1nm-15nm X-rays, and the exposure energy required to act on the patterning material during patterning is less than 100 mJ / cm². 2 .

24. A patterned thin film, characterized in that, The patterned film is formed using the patterned material described in any one of claims 1-23.

25. The patterned thin film as claimed in claim 24, characterized in that, The resolution of the pattern on the patterned thin film is in the range of 0.2nm-100nm; the edge roughness of the pattern on the patterned thin film is 2%-30% of the resolution.

Images