Substrate processing apparatus

By configuring the circulation flow path and the discharge flow path in parallel or in contact within the substrate processing device, and by using heat insulation materials and valves, the problem of temperature drop in the processing liquid was solved, ensuring the temperature stability of the processing liquid and preventing changes in substrate properties.

CN114068351BActive Publication Date: 2026-03-31SCREEN HOLDINGS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-06-23
Publication Date
2026-03-31

AI Technical Summary

Technical Problem

In a substrate processing apparatus, the temperature of the circulating processing liquid drops as it exits the nozzle, causing changes in the substrate properties.

Method used

The circulating flow path and the discharge flow path are configured in parallel or in contact, and part of the flow path is covered with heat insulation material. Combined with valves and flow meters, a containment section is formed to maintain the flow path temperature.

Benefits of technology

It effectively suppressed the temperature drop of the processing solution, ensured the temperature stability of the processing solution, and avoided changes in substrate properties.

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Abstract

A substrate processing apparatus is provided. A substrate processing apparatus (10) includes a substrate processing unit (100) that processes a substrate (W), a circulation flow path (330) that is provided with a heater (313) that heats a processing liquid supplied to the substrate processing unit (100) and through which the processing liquid circulates, a discharge flow path (132) that branches from the circulation flow path (330) and causes the processing liquid to flow to the substrate processing unit (100), and a valve (136) that is provided in the discharge flow path (132). A portion of the circulation flow path (330) is provided along a portion of the discharge flow path (132).
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Description

Technical Field

[0001] This invention relates to a substrate processing apparatus. Background Technology

[0002] Substrate processing apparatus for processing substrates is suitable for use in the manufacture of semiconductor devices, etc. In the substrate processing apparatus, a processing liquid is supplied to the substrate to process it. When a high-temperature processing liquid is used when processing the substrate, sometimes the processing liquid, which is circulated in a heater and set to a specific temperature, is discharged onto the substrate (see Patent Document 1).

[0003] In the substrate processing apparatus of Patent Document 1, a processing liquid that is circulated while being set to a specific temperature by a heater is used to process the substrate, and when the processing liquid is discharged from the standby position of the nozzle, the interior of the circulation path is blocked from the environment around the substrate.

[0004] [Background Technical Documents]

[0005] [Patent Literature]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2020-35920 Summary of the Invention

[0007] [The problem the invention aims to solve]

[0008] In the substrate processing apparatus of Patent Document 1, when the circulating processing liquid is discharged from the nozzle toward the substrate through the discharge flow path, the temperature of the processing liquid sometimes drops in the discharge flow path. In particular, when the processing liquid is first discharged to the substrate, even if the processing liquid is regulated in the circulation flow path, the temperature of the processing liquid still drops when the processing liquid flows through the discharge flow path, sometimes causing changes in the properties of the substrate.

[0009] The present invention was made in view of the aforementioned problem, and its object is to provide a substrate processing apparatus that can suppress the temperature drop of the processing liquid when the circulating processing liquid is discharged to the substrate.

[0010] [Technical means to solve the problem]

[0011] According to one aspect of the present invention, a substrate processing apparatus includes: a substrate processing unit for processing a substrate; a circulation path having a heater for heating a processing liquid supplied to the substrate processing unit and for circulating the processing liquid; a discharge path branching from the circulation path to allow the processing liquid to flow to the substrate processing unit; and a valve disposed in the discharge path; wherein a portion of the circulation path is disposed along a portion of the discharge path.

[0012] In one embodiment, a portion of the circulating flow path extends parallel to a portion of the discharging flow path.

[0013] In one embodiment, a portion of the circulating flow path is in contact with a portion of the discharging flow path.

[0014] In one embodiment, the substrate processing apparatus further includes a heat-insulating material that covers a portion of the circulation path and a portion of the discharge path.

[0015] In one embodiment, the valve comprises a motor needle valve.

[0016] In one embodiment, a flow meter is further included, which is configured in the discharge flow path.

[0017] In one embodiment, the valve comprises a three-way valve.

[0018] In one embodiment, the substrate processing apparatus further includes a receiving section that receives a portion of the circulation path, a portion of the discharge path, and the valve.

[0019] In one embodiment, the receiving part has: a box with an opening at the top; and a cover covering the top of the box.

[0020] In one embodiment, the substrate processing unit includes: a chamber for processing the substrate; a substrate holding portion disposed within the chamber; a cup disposed within the chamber; a driving chamber having a driving portion for driving the substrate holding portion and the cup; and a frame located between the chamber and the driving chamber; and the receiving portion disposed on the side of the frame.

[0021] In one embodiment, the circulating flow path has: a main flow path; and a detour flow path branching from the main flow path and connecting to the discharge flow path; and a portion of the detour flow path is configured along a portion of the discharge flow path.

[0022] [Invention Effects]

[0023] According to the present invention, when the circulated processing liquid is discharged to the substrate, the temperature drop of the processing liquid can be suppressed. Attached Figure Description

[0024] Figure 1 This is a schematic top view of the substrate processing apparatus of this embodiment.

[0025] Figure 2 This is a schematic diagram of the substrate processing apparatus of this embodiment.

[0026] Figure 3This is a schematic diagram of the substrate processing unit in the substrate processing apparatus of this embodiment.

[0027] Figure 4 This is a block diagram of the substrate processing apparatus of this embodiment.

[0028] Figure 5 This is a schematic side view of the substrate processing apparatus of this embodiment.

[0029] Figure 6 This is a schematic partial enlarged view of the substrate processing apparatus of this embodiment.

[0030] Figure 7 This is a schematic partial enlarged view of the substrate processing apparatus of this embodiment.

[0031] Figure 8 This is a schematic perspective view of the substrate processing apparatus of this embodiment.

[0032] Figure 9 This is a schematic perspective view of the area near the receiving section in the substrate processing apparatus of this embodiment.

[0033] Figure 10 This is a schematic perspective view of the area near the connection support portion in the substrate processing apparatus of this embodiment.

[0034] Figure 11 This is a schematic diagram of the substrate processing unit in the substrate processing apparatus of this embodiment.

[0035] Figure 12 This is a schematic top view of the substrate processing apparatus of this embodiment.

[0036] Figure 13 This is a schematic top view of the substrate processing apparatus of this embodiment.

[0037] Figure 14 This is a schematic diagram of the substrate processing apparatus of this embodiment.

[0038] Figure 15 This is a schematic diagram of the substrate processing unit in the substrate processing apparatus of this embodiment.

[0039] Figure 16 This is a schematic partial enlarged view of the substrate processing apparatus of this embodiment.

[0040] Figure 17 This is a schematic side view of the substrate processing apparatus of this embodiment.

[0041] Figure 18 This is a schematic perspective view of the substrate processing apparatus of this embodiment.

[0042] Figure 19This is a schematic partial enlarged perspective view of the area near the receiving section in the substrate processing apparatus of this embodiment. Detailed Implementation

[0043] Hereinafter, embodiments of the substrate processing apparatus of the present invention will be described with reference to the accompanying drawings. In the drawings, the same or corresponding parts are given the same reference numerals and are not described repeatedly. Furthermore, in this application specification, for ease of understanding the invention, X-axis, Y-axis, and Z-axis that are orthogonal to each other are sometimes described. Typically, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0044] Next, refer to Figure 1 The substrate processing apparatus 10 of this embodiment will be described. Figure 1 This is a schematic top view of the substrate processing apparatus 10.

[0045] The substrate processing apparatus 10 processes the substrate W. The substrate processing apparatus 10 includes a plurality of substrate processing units 100. The substrate processing units 100 process the substrate W by performing at least one of the following processes: etching, surface treatment, property imparting, processing film formation, removal of at least a portion of the film, and film cleaning.

[0046] like Figure 1 As shown, the substrate processing apparatus 10, in addition to having multiple substrate processing units 100, also includes: a fluid cabinet 210, a fluid container 220, a processing liquid circulation mechanism 300, multiple load ports LP, a transfer robot IR, a central robot CR, and a control device 20. The control device 20 controls the substrate processing units 100, the fluid cabinet 210, the fluid container 220, the processing liquid circulation mechanism 300, the load ports LP, the transfer robot IR, and the central robot CR.

[0047] The load port LP stacks and houses multiple substrates W. A transfer robot IR moves the substrates W between the load port LP and the central robot CR. Alternatively, the device can be configured as follows: a temporary mounting stage (passage) for placing the substrates W is provided between the transfer robot IR and the central robot CR, and the substrates W are indirectly transferred between the transfer robot IR and the central robot CR via the mounting stage. The central robot CR moves the substrates W between the transfer robot IR and the substrate processing unit 100.

[0048] Multiple substrate processing units 100 form multiple towers TW (Talls TW) arranged in a manner surrounding the central robotic arm CR when viewed from above. Figure 2 There are four towers (TW). Each tower (TW) contains multiple substrate processing units 100 stacked on top of each other. Figure 1 The middle section contains three substrate processing units (100).

[0049] Each substrate processing unit 100 discharges a processing solution to the substrate W to process the substrate W. The processing solution includes a chemical solution, a washing solution, and / or a hydrophobic solution. In addition, the processing solution may also contain other liquids.

[0050] Fluid cabinet 210 contains processing liquid. In addition, fluid cabinet 210 can also contain gas.

[0051] Fluid cartridges 220 correspond to towers TW. Liquid in fluid cabinet 210 is supplied via any fluid cartridge 220 to all substrate processing units 100 contained in the tower TW corresponding to the fluid cartridge 220. In addition, gas in fluid cabinet 210 is supplied via any fluid cartridge 220 to all substrate processing units 100 contained in the tower TW corresponding to the fluid cartridge 220.

[0052] The processing liquid circulation mechanism 300 circulates the processing liquid supplied to each substrate processing unit 100. Typically, the substrate processing unit 100 processes the substrate W using a processing liquid at a temperature higher than room temperature. Therefore, the processing liquid circulation mechanism 300 supplies processing liquid to each substrate processing unit 100 while circulating the heated processing liquid.

[0053] The processing liquid circulation mechanism 300 includes a processing liquid tank 310, multiple processing liquid units 320, and a circulation path 330. The processing liquid units 320 are respectively configured corresponding to multiple towers (TW). In the circulation path 330, the processing liquid circulates within the processing liquid tank 310 and the processing liquid units 320. The circulation path 330 is formed by multiple piping. The processing liquid in the processing liquid tank 310 is supplied via the processing liquid units 320 to all the substrate processing units 100 included in the towers (TW) corresponding to the processing liquid units 320.

[0054] Furthermore, the liquid supplied to the substrate processing unit 100 from the fluid tank 210 via the fluid cartridge 220 is different from the liquid supplied to the substrate processing unit 100 from the processing liquid tank 310 via the processing liquid unit 320 through the circulation path 330. For example, the liquid supplied to the substrate processing unit 100 from the fluid tank 210 via the fluid cartridge 220 is an acidic or alkaline liquid. Typically, the pipe diameter of the liquid flowing out of the fluid tank 210 is approximately 20 mm, and the supply rate to the substrate W is 1 L / min to 10 L / min.

[0055] On the other hand, typically, the processing liquid supplied from the processing liquid tank 310 to the substrate processing unit 100 via the processing liquid unit 320 and circulation path 330 is a flammable liquid. For example, the flammable liquid contains IPA (isopropanol). Alternatively, the flammable liquid may also contain SMT (hydrophobic liquid). Typically, the piping diameter of the processing liquid supplied from the processing liquid tank 310 is approximately 10 mm, and the supply amount to the substrate W is 50 cm. 3 / minute ~300cm 3 / minute.

[0056] The control device 20 controls various operations of the substrate processing apparatus 10. The control device 20 includes a control unit 22 and a storage unit 24. The control unit 22 has a processor. For example, the control unit 22 has a central processing unit (CPU). Alternatively, the control unit 22 may have a general-purpose arithmetic unit.

[0057] Storage unit 24 stores data and computer programs. The data includes process recipe data. The process recipe data contains information representing multiple process recipes. Each process recipe specifies the processing content and sequence of the substrate W.

[0058] Storage unit 24 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. Storage unit 24 may also include removable media. Control unit 22 executes the computer program stored in storage unit 24 to perform substrate processing operations.

[0059] The storage unit 24 stores a computer program in a pre-defined order. The substrate processing unit 100 operates in the order specified by the computer program.

[0060] in addition, Figure 1 The diagram shows one control device 20 relative to the substrate processing apparatus 10, but it is also possible that each substrate processing unit 100 has one control device 20. However, in this case, the substrate processing apparatus 10 preferably has multiple substrate processing units 100 and other control devices for controlling devices other than the substrate processing units 100.

[0061] Next, refer to Figure 2 The circulation of the processing liquid in the substrate processing apparatus 10 will be explained. Figure 2 This is a schematic diagram of the substrate processing apparatus 10.

[0062] like Figure 2 As shown, the processing liquid circulates within the processing liquid tank 310 and the processing liquid unit 320, and is supplied from the processing liquid unit 320 to the substrate processing unit 100 as needed.

[0063] The processing liquid tank 310 regulates the processing liquid. Typically, the processing liquid tank 310 regulates the processing liquid to a state above room temperature. In addition, the processing liquid tank 310 filters impurities in the processing liquid.

[0064] The treatment fluid tank 310 includes: a treatment fluid tank 311, a pump 312, a heater 313, a flow meter 314, a filter 315, and a valve 316. The treatment fluid tank 311 stores the treatment fluid.

[0065] Pump 312 delivers the processing liquid to the downstream side of the circulation path 330. After temporarily drawing in the processing liquid, pump 312 discharges the drawn-in processing liquid downstream of the circulation path 330. Driven by pump 312, the processing liquid in the processing liquid tank 311 is circulated through the circulation path 330. In addition, the processing liquid is supplied to the substrate processing unit 100 as needed.

[0066] Heater 313 heats the processing liquid flowing through circulation path 330. Therefore, circulation path 330 can circulate processing liquid with a specific temperature above room temperature. Furthermore, substrate processing unit 100 can process substrate W using processing liquid with a specific temperature above room temperature.

[0067] Flow meter 314 measures the flow rate of the processed liquid flowing through circulation path 330. Filter 315 filters out impurities or foreign matter from the processed liquid flowing through circulation path 330.

[0068] Valve 316 opens and closes the circulation path 330. Furthermore, valve 316 can also change the flow rate through the circulation path 330. For example, valve 316 could also be a motor needle valve. For example, the flow rate of the processed fluid controlled by valve 316 can also be adjusted based on the measurement results of flow meter 314.

[0069] The circulation path 330 is a flow path from the processing liquid tank 310 through the processing liquid unit 320 and back to the processing liquid tank 310. Additionally, the processing liquid unit 320 is provided with a discharge path 132 branching off from the circulation path 330. The processing liquid is discharged to the substrate W via the discharge path 132.

[0070] The circulation path 330 includes: path 331, from the treatment liquid tank 311 to the exit of the treatment liquid cabinet 310; path 332, from the exit of the treatment liquid cabinet 310 to the entry of the treatment liquid unit 320; path 333, from the entry of the treatment liquid unit 320 to the turnaround point; path 334, from the turnaround point to the exit of the treatment liquid unit 320; path 335, from the exit of the treatment liquid unit 320 to the entry of the treatment liquid cabinet 310; and path 336, from the entry of the treatment liquid cabinet 310 to the treatment liquid tank 311.

[0071] After passing through pump 312 and heater 313, flow path 331 branches into multiple branch flow paths. Each branch flow path 331 is connected to flow path 332 via flow meter 314 and filter 315. The treated liquid flows vertically downward from the treated liquid tank 311 through flow path 331 and then horizontally into flow path 332.

[0072] The flow path 332 is positioned below the ground (base plate) on which the processing liquid tank 310, processing liquid unit 320, and substrate processing unit 100 are mounted. The processing liquid enters the flow path 332 in a horizontal direction.

[0073] Flow path 333 extends vertically upward from below the ground, and the processing liquid flows vertically upward along flow path 333. Flow path 333 has a main flow path 333a and a detour flow path 33U. Main flow path 333a extends vertically upward. Detour flow path 33U extends horizontally from main flow path 333a toward substrate processing unit 100.

[0074] As described above, the substrate processing unit 100 is stacked in multiple segments. The main flow path 333a extends vertically upward for each segment of the substrate processing unit 100, and the detour flow paths 33U extend from the main flow path 333a in a manner close to each substrate processing unit 100.

[0075] The substrate processing unit 100 includes a processing liquid supply unit 130, details of which will be described later. The processing liquid supply unit 130 includes a discharge flow path 132, a nozzle 134, and a valve 136. The discharge flow path 132 is connected to a bypass flow path 33U. The valve 136 is disposed in the discharge flow path 132. The valve 136 is a type of device for directly or indirectly controlling the flow path of the processing liquid.

[0076] By opening valve 136, the processing liquid is discharged from the main flow path 333a and the detour flow path 33U of flow path 333 through the discharge flow path 132 to the substrate W. Therefore, the processing liquid is supplied to the substrate W as needed from the main flow path 333a and the detour flow path 33U of flow path 333 through the discharge flow path 132 and the nozzle 134.

[0077] Additionally, a portion of the discharge flow path 132 is configured along a portion of the detour flow path 33U. This portion of the discharge flow path 132 is preferably parallel to a portion of the detour flow path 33U. Furthermore, this portion of the discharge flow path 132 is preferably close to a portion of the detour flow path 33U, and may also contact a portion of the detour flow path 33U.

[0078] The detour flow path 33U has a destination path 333b and a return path 333c. A portion of the discharge flow path 132 may also be configured along a portion of one of the destination path 333b and the return path 333c. Preferably, the portion of the discharge flow path 132 is parallel to a portion of one of the destination path 333b and the return path 333c. Furthermore, the portion of the discharge flow path 132 is preferably close to a portion of one of the destination path 333b and the return path 333c, and the portion of the discharge flow path 132 may also contact a portion of one of the destination path 333b and the return path 333c.

[0079] Flow path 334 extends from vertically upwards to below ground level. Flow path 334 spans the height corresponding to the multiple substrate processing units 100 and extends linearly in the vertical direction. In addition, flow paths 333 and 334 are disposed within the processing liquid unit 320.

[0080] Flow path 335 is similarly disposed below the ground (base plate) on which the processing liquid tank 310, processing liquid unit 320 and substrate processing unit 100 are mounted. Flow path 335 extends in the horizontal direction.

[0081] Furthermore, flow path 336 extends vertically upward from below the ground. The processing liquid enters from below the ground and flows vertically upward along flow path 336 before returning to the processing liquid tank 311. A valve 316 is disposed in flow path 336. Additionally, flow paths 331 and 336 are disposed within the processing liquid tank 310. In this way, the processing liquid circulates in the circulation flow path 330 and is supplied to the substrate W as needed.

[0082] The processing liquid flowing through the processing liquid unit 320 passes through the bypass flow path 33U. Furthermore, with valve 136 open, the processing liquid flows through the discharge flow path 132 and is discharged from nozzle 134 onto the substrate W. With valve 136 closed, because the processing liquid flows through the bypass flow path 33U arranged along the discharge flow path 132, the discharge flow path 132 can be maintained at a relatively high temperature even when there is no processing liquid flowing through it. Therefore, when the processing liquid begins to flow through the discharge flow path 132, the temperature drop of the processing liquid can be suppressed. Thus, the processing liquid is not wasted, and it can be effectively utilized to process the substrate W.

[0083] For example, IPA (isopropyl alcohol) solution can also be used as the treatment solution. Alternatively, SMT (hydrophobicating agent) can also be used as the treatment solution.

[0084] in addition, Figure 2 In this case, the processing liquid cabinet 310, the processing liquid unit 320, and the substrate processing unit 100 are all disposed above the ground, but the processing liquid cabinet 310 can also be disposed below the ground.

[0085] Next, refer to Figures 1-3 The substrate processing unit 100 in the substrate processing apparatus 10 of this embodiment will be described. Figure 3 This is a schematic diagram of the substrate processing unit 100.

[0086] The substrate processing unit 100 includes a chamber 110, a substrate holding section 120, and a processing liquid supply section 130. The chamber 110 houses the substrate W. The substrate holding section 120 holds the substrate W.

[0087] The chamber 110 is generally box-shaped with an internal space. The chamber 110 houses the substrate W. Here, the substrate processing unit 100 is a monolithic type that processes substrates W one by one, and the chamber 110 houses substrates W one by one. The substrate W is housed within the chamber 110 and processed within the chamber 110. The chamber 110 houses at least a portion of both a substrate holding section 120 and a processing liquid supply section 130.

[0088] The substrate holding portion 120 holds the substrate W. The substrate holding portion 120 holds the substrate W horizontally with the front (upper surface) Wa of the substrate W facing upwards and the back (lower surface) Wb of the substrate W facing vertically downwards. Furthermore, the substrate holding portion 120 rotates the substrate W while holding it.

[0089] For example, the substrate holding portion 120 may also be a clamping type that clamps the end of the substrate W. Alternatively, the substrate holding portion 120 may also have any mechanism for holding the substrate W from the back side Wb. For example, the substrate holding portion 120 may also be a vacuum type. In this case, the substrate holding portion 120 holds the substrate W horizontally by adsorbing the central portion of the back side Wb of the substrate W, which is a non-device forming surface, onto the front side. Alternatively, the substrate holding portion 120 may also be a combination of a clamping type and a vacuum type that contacts the peripheral end face of the substrate W with a plurality of clamping pins.

[0090] For example, the substrate holding portion 120 includes: a rotating base 121, a clamping member 122, a shaft 123, an electric motor 124, a housing 125, and a motor drive portion 126. The clamping member 122 is disposed on the rotating base 121. The clamping member 122 clamps the substrate W. Typically, a plurality of clamping members 122 are disposed on the rotating base 121.

[0091] Shaft 123 is a hollow shaft. Shaft 123 extends vertically along the rotation axis Ax. A rotating base 121 is attached to the upper end of shaft 123. The substrate W is placed above the rotating base 121.

[0092] The rotating base 121 is a circular plate that horizontally supports the substrate W. A shaft 123 extends downward from the center of the rotating base 121. An electric motor 124 applies rotational force to the shaft 123. By rotating the shaft 123 in the direction of rotation, the electric motor 124 causes the substrate W and the rotating base 121 to rotate about the rotation axis Ax. A housing 125 surrounds the shaft 123 and the electric motor 124.

[0093] The motor drive unit 126 drives the electric motor 124. The rotation of the electric motor 124 is controlled by the drive of the motor drive unit 126. The motor drive unit 126 is disposed outside the chamber 110.

[0094] The processing liquid supply unit 130 supplies processing liquid to the substrate W. Typically, the processing liquid supply unit 130 supplies processing liquid to the front side Wa of the substrate W. The processing liquid is, for example, IPA liquid.

[0095] At least a portion of the processing liquid supply unit 130 is housed within the chamber 110. The processing liquid supply unit 130 supplies processing liquid to the front side Wa of the substrate W.

[0096] As described above, the processing liquid supply unit 130 includes a discharge flow path 132, a nozzle 134, and a valve 136. Processing liquid is supplied from a supply source to the discharge flow path 132, and the processing liquid flows within the discharge flow path 132. The nozzle 134 is disposed at the front end of the discharge flow path 132. The nozzle 134 discharges the processing liquid onto the front side Wa of the substrate W. The valve 136 is connected to the discharge flow path 132. The valve 136 opens and closes the flow path within the discharge flow path 132.

[0097] Here, the discharge path 132 extends from the outside of the chamber 110 to the inside of the chamber 110, and the valve 136 is disposed on the outside of the chamber 110. The nozzle 134 is preferably configured to be movable relative to the substrate W.

[0098] The substrate processing unit 100 includes a shielding member 140. The shielding member 140 includes a shielding plate 142, a support shaft 144, and a lifting unit 146. The shielding plate 142 is horizontally disposed above the substrate holding portion 120. The shielding plate 142 comprises a thin, circular plate. The shielding plate 142 is horizontally supported by a cylindrical support shaft 144 extending upward from the center of the shielding plate 142. The centerline of the shielding plate 142 is located on the rotation axis Ax of the substrate W. A nozzle 134 of the processing liquid supply portion 130 is mounted on the shielding plate 142.

[0099] The lower surface 142L of the shielding plate 142 faces the front surface of the substrate W. The lower surface 142L of the shielding plate 142 is parallel to the front surface Wa of the substrate W and has an outer diameter greater than the diameter of the substrate W.

[0100] The lifting unit 146 causes the shielding plate 142 to move up and down in the vertical direction. The lifting unit 146 also allows the shielding plate 142 to move at any position between the upper and lower positions. Figure 3 In the middle, shielding plate 142 is located at the top.

[0101] The substrate processing unit 100 further includes a cup 180. The cup 180 recovers the processing liquid splashed from the substrate W.

[0102] The cup body 180 includes a cup body 182 and a cup body driving part 184. The cup body driving part 184 drives the cup body 182. The cup body 182 is raised and lowered by the driving of the cup body driving part 184. The cup body driving part 184 is disposed outside the chamber 110.

[0103] For example, during the period when the processing liquid supply section 130 supplies processing liquid to the substrate W, the cup body 182 rises vertically upward to the side of the substrate W. In this case, the cup body 182 recovers the processing liquid that splashes out from the substrate W due to the rotation of the substrate W. Furthermore, as soon as the period of supplying processing liquid to the substrate W by the processing liquid supply section 130 ends, the cup body 182 descends vertically downward from the side of the substrate W.

[0104] As described above, the control device 20 includes a control unit 22 and a storage unit 24. The control unit 22 controls the substrate holding unit 120, the processing liquid supply unit 130, the shielding member 140, and / or the cup body 180. In one example, the control unit 22 controls the motor drive unit 126, the valve 136, the lifting unit 146, and / or the cup body drive unit 184.

[0105] The substrate processing unit 100 of this embodiment is suitable for fabricating a semiconductor device having a semiconductor layer. Typically, in a semiconductor device, a conductive layer and an insulating layer are stacked on a substrate. During the fabrication of the semiconductor device, the substrate processing unit 100 is suitable for cleaning and / or processing (e.g., etching, property modification, etc.) of the conductive layer and / or the insulating layer.

[0106] Next, refer to Figures 1-4 The substrate processing apparatus 10 of this embodiment will be described. Figure 4 This is a block diagram of the substrate processing apparatus 10.

[0107] like Figure 4As shown, the control device 20 controls various operations of the substrate processing apparatus 10. The control device 20 controls the transfer robot IR, the central robot CR, the substrate holding section 120, the processing liquid supply section 130, and the cup 180. Specifically, the control device 20 controls the transfer robot IR, the central robot CR, the substrate holding section 120, the processing liquid supply section 130, and the cup 180 by sending control signals to them.

[0108] Specifically, the control unit 22 controls the transfer robot IR, thereby using the transfer robot IR to transfer the substrate W.

[0109] The control unit 22 controls the central robot CR, thereby using the central robot CR to transfer the substrate W. For example, the central robot CR receives the unprocessed substrate W and moves the substrate W into any one of the multiple chambers 110. In addition, the central robot CR receives the processed substrate W from the chamber 110 and moves the substrate W out.

[0110] The control unit 22 controls the substrate holding unit 120 to control the substrate W to start rotating, change its rotation speed, and stop rotating. For example, the control unit 22 controls the substrate holding unit 120 to change its rotational speed. Specifically, the control unit 22 changes the rotational speed of the substrate W by changing the rotational speed of the electric motor 124 of the substrate holding unit 120.

[0111] The control unit 22 controls the valve 136 of the processing fluid supply unit 130, thereby switching the state of the valve 136 between an open state and a closed state. Specifically, the control unit 22 controls the valve 136 of the processing fluid supply unit 130 to open the valve 136, thereby allowing the processing fluid flowing into the nozzle 134 in the discharge flow path 132 to pass through. Conversely, the control unit 22 controls the valve 136 of the processing fluid supply unit 130 to close the valve 136, thereby stopping the supply of processing fluid flowing into the nozzle 134 in the discharge flow path 132.

[0112] The control unit 22 controls the cup body drive unit 184, thereby controlling the position of the control cup body 182. For example, during the period when the processing liquid supply unit 130 supplies processing liquid to the substrate W, the control unit 22 controls the cup body drive unit 184 to rise vertically upwards until the cup body 182 is to the side of the substrate W. Furthermore, as soon as the period when the processing liquid supply unit 130 supplies processing liquid to the substrate W ends, the control unit 22 controls the cup body drive unit 184 to descend vertically downwards from the side of the substrate W.

[0113] In addition, the control unit 22 can also control Figure 3 The shielding member 140 is shown. For example, the control unit 22 can also control the lifting unit 146, thereby causing the substrate W to rise or fall relative to the shielding plate 142.

[0114] Next, refer to Figure 5 The substrate processing apparatus 10 of this embodiment will be described. Figure 5 This is a schematic diagram of the substrate processing apparatus 10. Figure 5 This shows the side view of the substrate processing unit 100 and the processing liquid unit 320 in the substrate processing apparatus 10.

[0115] like Figure 5 As shown, the substrate processing unit 100 is stacked in multiple segments. Here, the substrate processing unit 100 is stacked in three segments across two columns. In addition, the processing liquid unit 320 is arranged between the two columns of the substrate processing unit 100 in a manner that extends in the vertical direction.

[0116] As described above, the processing fluid unit 320 includes a flow path 333 and a flow path 334. Flow path 333 extends from vertically downward to vertically upward. Flow path 334 extends from vertically upward to vertically downward. The processing fluid flows from vertically downward to vertically upward after passing through flow path 333, and then flows from vertically upward to vertically downward after passing through flow path 334. Alternatively, flow paths 333 and 334 can also be configured to be separate from each other within a single tube.

[0117] Flow path 333 has multiple main flow paths 333a and multiple bypass flow paths 33U. Here, the main flow paths 333a extend vertically downwards and upwards. The bypass flow paths 33U extend from the end of one of the main flow paths 333a. Typically, the bypass flow paths 33U extend horizontally from the main flow paths 333a. The bypass flow paths 33U extend from one main flow path 333a and connect to another main flow path 333a. The bypass flow paths 33U connect to the discharge flow path 132. (Refer to the above text.) Figure 2 and Figure 3 As described above, the processing liquid enters the chamber 110 via the discharge flow path 132 and is discharged from the nozzle 134 onto the substrate W. Thus, the processing liquid is supplied to the chamber 110 through the main flow path 333a, the detour flow path 33U, and the discharge flow path 132.

[0118] The substrate processing unit 100 includes a chamber 110, a drive chamber 112, and a frame 114. Here, the substrate processing unit 100 has two spaces arranged vertically. The upper space is the chamber 110, and the lower space is the drive chamber 112. The frame 114 is disposed between the chamber 110 and the drive chamber 112.

[0119] like Figure 3As shown, the chamber 110 is equipped with a substrate holding part 120, a nozzle 134, a shielding member 140, and a cup body 182, etc. Figure 5 To avoid overly complex diagrams, no related illustrations are provided. On the other hand, a drive member for the components within the drive chamber 110 is disposed within the drive chamber 112. For example, a motor drive unit 126 and / or a cup body drive unit 184 are disposed within the drive chamber 112. Furthermore, a device for driving the lifting unit 146 may also be disposed within the drive chamber 112. Figure 3 The driving source of ).

[0120] Here, a receiving section 160 is arranged on the side of the frame 114. For example, the receiving section 160 is a box shape with or without a lid. The receiving section 160 houses a portion of the circulating flow path 330 and a portion of the discharge flow path 132. In detail, the receiving section 160 houses a portion of the detour flow path 330 and the discharge flow path 132. In addition, the receiving section 160 may also house a valve 136 disposed in the discharge flow path 132. The receiving section 160 is located on the side of the frame 114 between the chamber 110 and the drive chamber 112, thereby facilitating maintenance of the machine within the chamber 110 and the drive chamber 112.

[0121] also, Figure 5 Because valve 136 is housed in housing section 160 and is also arranged along bypass flow path 33U, the temperature drop of valve 136 can be suppressed. When valve 136 changes from closed to open, if the temperature of valve 136 is low, the temperature of the processing fluid passing through valve 136 will drop. Therefore, by arranging valve 136 along bypass flow path 33U, even when valve 136 is closed, valve 136 can still maintain a relatively high temperature.

[0122] in addition, Figure 5 In this embodiment, the receiving part 160 houses the valve 136, but this embodiment is not limited to this. The valve 136 may also be disposed in a position within the chamber 110 that is not housed by the receiving part 160. Even in this case, since the processing fluid flows through the detour flow path 33U disposed along the discharge flow path 132 when the valve 136 is closed, the temperature drop of the processing fluid can still be suppressed when the processing fluid begins to flow through the discharge flow path 132.

[0123] Alternatively, a motor needle valve can also be installed in the housing 160 as valve 136, but Figure 5 No related illustrations are provided. In addition, a flow meter 137 and a back-suction integrated discharge valve may also be installed in the housing 160.

[0124] Furthermore, the housing 160 is configured to extend horizontally between adjacent substrate processing units 100 arranged in the column direction, and the detour flow path 333U housed in the housing 160 extends in a direction orthogonal to the extension direction of the main flow path 333a. Therefore, the temperature drop of the discharge flow path 132 can be suppressed by a relatively short circulation flow path.

[0125] Next, refer to Figure 6 The substrate processing apparatus 10 of this embodiment will be described. Figure 6 This is a partial enlarged view of the substrate processing apparatus 10.

[0126] like Figure 6 As shown, a circulation path 333 of a circulation path 330 is arranged on the side of the substrate processing unit 100. The circulation path 333 extends from vertically downward to vertically upward. The circulation path 333 has a main flow path 333a and a detour flow path 33U. The detour flow path 33U extends from the main flow path 333a. The detour flow path 33U extends horizontally from the end of the main flow path 333a, and then returns to the horizontal direction towards the main flow path 333a.

[0127] In detail, one of the main flow paths 333a of the flow path 333 extends vertically downwards and upwards. From the end of this main flow path 333a, it turns horizontally to become a detour flow path 33U. The detour flow path 33U extends from one end along the long side of the receiving portion 160 to the other end, and then extends again to one end along the long side of the receiving portion 160. The end of the detour flow path 33U connects to another main flow path 333a and further extends vertically downwards and upwards.

[0128] Furthermore, the discharge flow path 132 branches off from the detour flow path 33U. The detour flow path 33U connects to the discharge flow path 132 midway. Here, the detour flow path 33U connects to the discharge flow path 132 at its end along the long side direction. In addition, a portion of the discharge flow path 132 is arranged adjacent to a portion of the detour flow path 33U.

[0129] The detour path 33U has a outgoing path 333b and a returning path 333c. The outgoing path 333b extends from the end of the main path 333a away from the main path 333a. The returning path 333c extends from the front end of the outgoing path 333b and connects to the main path 333a.

[0130] In addition, at least a portion of the discharge flow path 132 is configured along the detour flow path 33U. Figure 6 The diagram shows the discharge path 132 along the return path 333c, but the discharge path 132 can also be along the outgoing path 333b.

[0131] For example, the discharge path 132, the outgoing path 333b, and the return path 333c can also be configured to be arranged side by side in the horizontal direction. Alternatively, the discharge path 132, the outgoing path 333b, and the return path 333c can also be configured to be arranged side by side in the vertical direction.

[0132] As described above, flow path 333 extends vertically upward from below, while passing through detour flow path 33U. Flow path 334 is disposed adjacent to flow path 333. Specifically, flow path 334 is disposed adjacent to the main flow path 333a of flow path 333. Flow path 334 extends vertically downward from above.

[0133] The receiving portion 160 is disposed on the side of the substrate processing unit 100. The receiving portion 160 extends in the horizontal direction. Flow paths 333 and 334 pass through the receiving portion 160. Flow path 334 passes through the receiving portion 160 in a straight line in the vertical direction. On the other hand, flow path 333 passes through the receiving portion 160 between adjacent main flow paths 333a via a detour flow path 33U that is received in the receiving portion 160 and flows in the horizontal direction.

[0134] As described above, the detour flow path 33U has a outgoing path 333b and a returning path 333c. The outgoing path 333b extends in a direction away from the main flow path 333a. Furthermore, the returning path 333c extends from the front end of the outgoing path 333b to the side of the main flow path 333a. In addition, the outgoing path 333b and the returning path 333c are connected only on the side away from the main flow path 333a, and are not connected on the side of the main flow path 333a.

[0135] The spacing between the discharge path 132, the destination path 333b, and the return path 333c is preferably short. For example, the discharge path 132 may also contact at least one of the destination path 333b and the return path 333c.

[0136] To suppress the temperature drop of the processed liquid flowing through the detour flow path 33U, it is preferable that a portion of the discharge flow path 132 is arranged along a portion of the detour flow path 33U. For example, the distance between a portion of the discharge flow path 132 and a portion of the detour flow path 33U is preferably short. For example, the shortest distance between the discharge flow path 132 and the detour flow path 33U can be less than 3 cm or less, or less than 1 cm. Alternatively, a portion of the discharge flow path 132 may also contact a portion of the detour flow path 33U.

[0137] Furthermore, in the detour flow path 33U, the outgoing path 333b and the returning path 333c are adjacent. Specifically, the interval between a portion of the outgoing path 333b and a portion of the returning path 333c is preferably short. A portion of the outgoing path 333b preferably contacts a portion of the returning path 333c.

[0138] Furthermore, the bypass flow path 33U and the discharge flow path 132 can also be surrounded by a heat-insulating material 162. Using the heat-insulating material 162, heat diffusion of the processed liquid flowing through the bypass flow path 33U and the discharge flow path 132 can be reduced, suppressing the temperature drop of the processed liquid flowing through the bypass flow path 33U and the discharge flow path 132. For example, the heat-insulating material 162 may contain porous PTFE (polytetrafluoroethylene).

[0139] In addition, the thermal insulation material 162 may also cover at least a portion of the valve 136. This can suppress heat diffusion from the valve 136.

[0140] Furthermore, when using the thermal insulation material 162, it is preferable to use a fixing member 164 to maintain the state in which the meandering flow path 33U and the discharge flow path 132 are surrounded. For example, a cable tie can also be used as the fixing member 164. Alternatively, a ring-shaped elastomer can also be used as the fixing member 164.

[0141] The containment section 160 may also have a sealed hollow space. When the containment section 160 is sealed, it is preferable to fill it with an inert gas.

[0142] Here, the substrate processing apparatus 10 further includes an inert gas supply unit 170 for supplying inert gas. The inert gas supply unit 170 supplies inert gas to the housing unit 160. The inert gas is, for example, nitrogen.

[0143] The inert gas supply unit 170 includes a flow path 172 and a valve 174. Inert gas is supplied from a supply source through the flow path 172 for inert gas flow. The valve 174 opens and closes the flow path within the flow path 172.

[0144] Here, the inert gas supply unit 170 supplies inert gas to the containment unit 160, but the inert gas supply unit 170 may also supply inert gas to the chamber 110.

[0145] Alternatively, flow paths 333 and 334 can also be configured inside a single outer pipe 33T. The inner diameter of the outer pipe 33T is larger than the sum of the outer diameters of the pipes forming flow path 333 and the pipes forming flow path 334. Therefore, a double piping system 33D is formed by flow paths 333, 334, and the outer pipe 33T. Flow paths 333 and 334 are configured inside the outer pipe 33T, and the space outside of flow paths 333 and 334 can be filled with air. In this way, by configuring a double piping system 33D with flow paths 333 and 334 configured inside the outer pipe 33T, heat diffusion from flow paths 333 and 334 can be suppressed.

[0146] Additionally, the above references Figure 6In the description provided, one valve 136 is configured as a flow path device in the discharge flow path 132, but this embodiment is not limited to this. Multiple flow path devices may also be configured in the discharge flow path 132.

[0147] Next, refer to Figure 7 The substrate processing apparatus 10 of this embodiment will be described. Figure 7 This is a schematic diagram of the substrate processing apparatus 10. Figure 7 In the substrate processing apparatus 10, the discharge flow path 132 is equipped with various valves 136 and flow meters 137 as flow path mechanisms. Apart from this point, it has the same features as those mentioned above. Figure 6 The substrate processing apparatus 10 described herein has the same configuration, and repeated descriptions are omitted to avoid lengthy descriptions.

[0148] like Figure 7 As shown, a motor needle valve 136a is configured as valve 136 in the discharge flow path 132. The flow rate of the processed liquid flowing through the discharge flow path 132 can be easily controlled by the motor needle valve 136a.

[0149] Furthermore, a back-suction integrated discharge valve 136b is configured as valve 136 in the discharge flow path 132. The flow rate of the processed liquid can be controlled with high precision through the back-suction integrated discharge valve 136b.

[0150] Furthermore, a flow meter 137 is disposed in the discharge flow path 132. The flow meter 137 measures the flow rate of the processed liquid flowing through the discharge flow path 132. For example, the flow meter 137 is an ultrasonic flow meter. In this way, the flow rate of the processed liquid supplied from the nozzle 134 to the substrate W can be measured.

[0151] When the discharge flow path 132 is equipped with a motor needle valve 136a, a flow meter 137 and a back suction integrated discharge valve 136b, the flow meter 137, the motor needle valve 136a and the back suction integrated discharge valve 136b are preferably arranged sequentially from upstream to downstream.

[0152] Furthermore, a three-way valve (toggle valve) 136c can also be configured as valve 136 in the discharge flow path 132. The three-way valve 136c is disposed between the connection between the discharge flow path 132 and the bypass flow path 33U and the motor needle valve 136a. In this case, one valve of the three-way valve 136c can also be connected to the inert gas supply unit. With the other valve of the three-way valve 136c closed, by supplying inert gas from the inert gas supply unit, the processing liquid can be discharged toward the substrate processing unit 100, thereby facilitating maintenance of the discharge flow path 132. Alternatively, while a three-way valve 136c is used here, two valves can also be used instead of the three-way valve 136c to supply inert gas from the inert gas supply unit for maintenance of the discharge flow path 132.

[0153] Next, refer to Figures 6-8 The substrate processing apparatus 10 of this embodiment will be described. Figure 8 This is a schematic perspective view of the substrate processing unit 100 and the processing liquid unit 320 in the substrate processing apparatus 10.

[0154] like Figure 8 As shown, three substrate processing units 100 are arranged vertically. Furthermore, a processing liquid unit 320 extends vertically to the side of the substrate processing unit 100. The processing liquid unit 320 includes: a dual piping 33D extending vertically; and a meandering flow path 33U housed within a housing 160 connected to the dual piping 33D. Figure 7 As described above, the dual piping 33D includes flow path 333 and flow path 334. Each substrate processing unit 100 is provided with a receiving portion 160. In detail, the receiving portion 160 is disposed on the side of the frame 114 of the substrate processing unit 100.

[0155] A connecting support 322 is disposed at the lower part of the processing fluid unit 320. The connecting support 322 supports the dual piping 33D and connects the flow paths 333 and 334 within the dual piping 33D to the flow paths 332 and 335 below ground. Figure 2 The dual piping 33D is connected to the connecting support 322. Flow paths 333 and 334 pass through the connecting support 322, but... Figure 8 No relevant illustrations were provided.

[0156] Next, refer to Figures 7-9 The substrate processing apparatus 10 of this embodiment will be described. Figure 9 This is a schematic perspective view of the housing 160 and its vicinity in the substrate processing apparatus 10. Additionally, Figure 9 For reference, the cover 160a of the housing 160 is shown in the open state.

[0157] like Figure 9 As shown, the receiving section 160 has a lid 160a and a box 160b. The box 160b is hollow and extends horizontally. The lid 160a has a shape that matches the hollow shape of the box 160b. By covering the box 160b with the lid 160a, the receiving section 160 can be sealed.

[0158] The housing 160b houses the detour flow path 33U and the discharge flow path 132. In addition, the housing 160b houses the three-way valve 136c, the flow meter 137, the motor needle valve 136a, and the back suction integrated discharge valve 136b, which are connected to the discharge flow path 132.

[0159] The container 160b houses the outgoing path 333b, the returning path 333c, and the discharge path 132 of the bypass flow path 33U. Here, the outgoing path 333b, the returning path 333c, and the discharge path 132 are arranged side-by-side in a horizontal row. Furthermore, within the container 160b, the outgoing path 333b, the returning path 333c, and the discharge path 132 of the bypass flow path 33U are covered by a heat-insulating material 162. The heat-insulating material 162 is fixed by a fixing member 164 in the area where the three-way valve 136c, the flow meter 137, the motor needle valve 136a, and the suction-integrated discharge valve 136b are not located. Because a high-temperature processing liquid circulates in the bypass flow path 33U, the heat-insulating material 162 and the fixing member 164 can suppress the temperature drop of the discharge path 132 and prevent heat diffusion from the bypass flow path 33U and the discharge path 132.

[0160] Furthermore, by covering the box 160b with the cover 160a, heat diffusion from the meandering flow path 33U and the discharge flow path 132 can be suppressed. In addition, by covering the box 160b with the cover 160a, even if a small amount of processing liquid leaks from the meandering flow path 33U and the discharge flow path 132, overall contamination of the substrate processing apparatus 10 can be prevented.

[0161] In addition, according to Figures 7-9 It can be understood that flow path 333 (main flow path 333a) and flow path 334 are integrally formed as part of the dual piping 33D outside the housing 160, while inside the housing 160, flow path 333 and flow path 334 are separate. The orientation of the main flow path 333a can be changed to a horizontal direction by means of a connector located at the end of the main flow path 333a, connecting with the bypass flow path 33U. Furthermore, Figure 9 In order to avoid the diagram being too complicated, the detour flow path 33U and the discharge flow path 132 are represented by a different thickness than the flow path 334 and the main flow path 333a, but of course the diameter of these flow paths can be the same.

[0162] Next, refer to Figures 6-10 The connection support 322 in the substrate processing apparatus 10 of this embodiment will be described. Figure 10 This is a schematic perspective view of the connecting support part 322.

[0163] like Figure 10 As shown, the dual conduit 33D extends vertically downwards and connects to the connecting support 322. For example... Figure 6 and Figure 7As shown, the dual piping 33D includes a flow path 333, a flow path 334, and an outer pipe 33T. The dual piping 33D connects to the connecting support 322 on its outer surface. Flow paths 333 and 334 of the dual piping 33D extend inside the connecting support 322. After extending horizontally at the connecting support 322, flow paths 333 and 334 extend vertically downwards. Then, flow paths 333 and 334 connect to a connector below the connecting support 322, thereby forming a dual piping again in flow paths 332 and 335 located below the ground.

[0164] Additionally, the above references Figure 3 In the description provided, the substrate processing unit 100 includes a shielding member 140, and processing liquid is supplied from the shielding member 140; however, this embodiment is not limited to this. In the substrate processing unit 100, processing liquid may also be supplied from a nozzle mounted on a movable arm.

[0165] Next, refer to Figure 11 and Figure 12 The substrate processing apparatus 10 of this embodiment will be described. Figure 11 This is a schematic diagram of the substrate processing unit 100 in the substrate processing apparatus 10. Figure 11 In the substrate processing unit 100, the nozzle 134 of the processing liquid supply unit 130 is mounted on the front end of the arm 138a, rather than on the shielding member 140. Apart from this point, [the following is also true]. Figure 3 The substrate processing unit 100 shown is the same, and repeated descriptions are omitted to avoid lengthy descriptions.

[0166] like Figure 11 As shown, the processing liquid supply unit 130 further includes a nozzle moving unit 138. The nozzle moving unit 138 moves the nozzle 134 between a dispensing position and a retracting position. When the nozzle 134 is in the dispensing position, the nozzle 134 is located above the substrate W. When the nozzle 134 is in the dispensing position, the nozzle 134 dispenses the processing liquid toward the front surface Wa of the substrate W. When the nozzle 134 is in the retracting position, the nozzle 134 is located at a position further radially outward from the substrate W than the substrate W.

[0167] The nozzle moving part 138 includes an arm 138a, a rotating shaft 138b, and a moving mechanism 138c. The arm 138a extends in a generally horizontal direction. A nozzle 134 is mounted at the front end of the arm 138a. The arm 138a is connected to the rotating shaft 138b. The rotating shaft 138b extends in a generally vertical direction. The moving mechanism 138c rotates the rotating shaft 138b about a rotating axis parallel to the generally vertical direction, causing the arm 138a to rotate along a generally horizontal plane. As a result, the nozzle 134 moves along a generally horizontal plane. For example, the moving mechanism 138c includes an arm swing motor that rotates the rotating shaft 138b about the rotating axis. The arm swing motor is, for example, a servo motor. Furthermore, the moving mechanism 138c raises and lowers the rotating shaft 138b in a generally vertical direction, thereby raising and lowering the arm 138a. As a result, the nozzle 134 moves in a generally vertical direction. For example, the moving mechanism 138c includes: a ball screw mechanism; and an arm lifting motor that provides driving force to the ball screw mechanism. The arm lifting motor is, for example, a servo motor.

[0168] Figure 12 This is a schematic front view of the substrate processing apparatus 10. (See attached image.) Figure 12 As shown, a central robotic arm CR is disposed inside the chamber 110, and a receiving portion 160 is disposed outside the chamber 110. Additionally, as referenced above... Figures 5-9 As described in the description, the containment section 160 contains a detour flow path 33U and an ejection flow path 132, but it should be noted that... Figure 12 To avoid diagram complexity, a single line is used to represent the meandering flow path 33U.

[0169] The rotating shaft 138b of the processing fluid supply unit 130 faces the receiving unit 160 across the side wall of the chamber 110. In this way, since the discharge flow path 132 in the chamber 110 can be shortened, it is easy to configure and maintain the machine in the chamber 110.

[0170] Additionally, the above references Figures 2 to 12 In the description provided, the bypass flow path 33U is disposed outside the chamber 110, but this embodiment is not limited to this. Furthermore, references to the above text... Figures 5-12 In the description provided, the receiving part 160 is disposed outside the chamber 110, but this embodiment is not limited to this. Alternatively, a portion of the detour flow path 33U may be disposed inside the chamber 110, and the receiving part 160 may also be disposed inside the chamber 110.

[0171] Next, refer to Figure 13 The substrate processing apparatus 10 of this embodiment will be described. Figure 13 This is a schematic diagram of the substrate processing apparatus 10. Additionally, Figure 13In the substrate processing apparatus 10, a portion of the circulation path 330 is disposed within the chamber 110, except at that point, and... Figure 12 The substrate processing apparatus 10 shown is the same, and repeated descriptions are omitted to avoid lengthy descriptions.

[0172] like Figure 13 As shown, the housing 160 is disposed within the chamber 110. Specifically, the housing 160 is disposed on the side of the chamber 110 different from the central manipulator CR side. (Refer to the above text.) Figures 5-9 As described in the description, the containment section 160 contains a detour flow path 33U and an ejection flow path 132, but it should be noted that, with Figure 12 same, Figure 13 To avoid making the diagram too complicated, the meandering flow path 33U is represented by a single line.

[0173] The processing fluid unit 320 is disposed on the outside of the chamber 110. More specifically, the processing fluid unit 320 is disposed between adjacent chambers 110.

[0174] also, Figure 13 In this embodiment, the processing fluid unit 320, which is equipped with flow paths 333 and 334 for the processing fluid, is disposed on the outside of the chamber 110, but this embodiment is not limited to this. Flow paths 333 and 334 may also be configured to penetrate the chamber 110 from vertically downward to vertically upward.

[0175] Additionally, the above references Figures 1 to 13 In the description provided, the processing fluid circulation mechanism 300 circulates only one type of processing fluid, but this embodiment is not limited to this. The processing fluid circulation mechanism 300 may also circulate multiple types of processing fluids.

[0176] Next, refer to Figure 14 The substrate processing apparatus 10 of this embodiment will be described. Figure 14 This is a schematic diagram of a substrate processing apparatus 10 that circulates two types of processing solutions. Additionally, Figure 14 In the substrate processing apparatus 10, two types of processing solutions are circulated, and apart from this point, they have the same characteristics as those mentioned above. Figure 2 The substrate processing apparatus 10 described herein has the same configuration, and repeated descriptions are omitted to avoid lengthy descriptions.

[0177] like Figure 14 As shown, the two processing solutions circulate within the processing solution tank 310 and the processing solution unit 320, respectively, and are supplied from the processing solution unit 320 to the substrate processing unit 100 as needed. For example, one of the two processing solutions is an IPA solution, and the other is an SMT solution.

[0178] The processing liquid tank 310 regulates two processing liquids. Typically, the processing liquid tank 310 regulates the processing liquids to a state above room temperature. Furthermore, the processing liquid tank 310 filters impurities within the processing liquids. In this specification, one of the two processing liquids is sometimes referred to as processing liquid A, and the other as processing liquid B.

[0179] The processing fluid tank 310 includes: a processing fluid tank 311A, a pump 312A, a heater 313A, a filter 315A, a processing fluid tank 311B, a pump 312B, a heater 313B, and a filter 315B. The processing fluid tank 311A, pump 312A, heater 313A, and filter 315A are used to regulate processing fluid A, while the processing fluid tank 311B, pump 312B, heater 313B, and filter 315B are used to regulate processing fluid B.

[0180] The processing fluid tank 311A, pump 312A, heater 313A, and filter 315A may have the same or different configurations as the processing fluid tank 311B, pump 312B, heater 313B, and filter 315B. For example, the flow rates of pumps 312A and 312B and / or the set temperatures of heaters 313A and 313B may vary depending on the type of processing fluid.

[0181] The processing fluid A flows sequentially through the following flow paths: flow path 331A, from the processing fluid tank 311A ​​to the exit of the processing fluid cabinet 310; flow path 332A, from the processing fluid cabinet 310 to the entry of the processing fluid unit 320; flow path 333A, from the entry of the processing fluid unit 320 to the turnaround point; flow path 334A, from the turnaround point to the exit of the processing fluid unit 320; flow path 335A, from the exit of the processing fluid unit 320 to the entry of the processing fluid cabinet 310; and flow path 336A, from the entry of the processing fluid cabinet 310 to the processing fluid tank 311A.

[0182] Similarly, the processing fluid B flows sequentially through the following flow paths: flow path 331B, from the processing fluid tank 311B to the exit of the processing fluid cabinet 310; flow path 332B, from the processing fluid cabinet 310 to the entry of the processing fluid unit 320; flow path 333B, from the entry of the processing fluid unit 320 to the turnaround point; flow path 334B, from the turnaround point to the exit of the processing fluid unit 320; flow path 335B, from the exit of the processing fluid unit 320 to the entry of the processing fluid cabinet 310; and flow path 336B, from the entry of the processing fluid cabinet 310 to the processing fluid tank 311B.

[0183] Flow path 333A includes a main flow path 333Aa, and a detour path 333Ab and a return path 333Ac, which serve as detour paths. Furthermore, the substrate processing unit 100 includes a discharge flow path 132A, a nozzle 134A, and a valve 136A. The discharge flow path 132A is connected to the return path 333Ac. The valve 136A is disposed in the discharge flow path 132A.

[0184] By opening valve 136A, the processing liquid from the main flow path 333Aa and return path 333Ac of flow path 333A is discharged onto the substrate W through discharge flow path 132A. Therefore, the processing liquid A is supplied to the substrate W as needed from the main flow path 333Aa and return path 333Ac of flow path 333A through discharge flow path 132A and nozzle 134.

[0185] Similarly, flow path 333B includes a main flow path 333Ba, and a detour flow path 333Bb and a return flow path 333Bc. Furthermore, the substrate processing unit 100 includes a discharge flow path 132B, a nozzle 134B, and a valve 136B. The discharge flow path 132B is connected to the return flow path 333Bc. The valve 136B is disposed in the discharge flow path 132B.

[0186] By opening valve 136B, the processing liquid from the main flow path 333Ba and return path 333Bc of flow path 333B is discharged onto the substrate W through discharge flow path 132B. Therefore, the processing liquid B is supplied to the substrate W as needed from the main flow path 333Ba and return path 333Bc of flow path 333B through discharge flow path 132B and nozzle 134.

[0187] Next, refer to Figure 14 and Figure 15 The substrate processing unit 100 in the substrate processing apparatus 10 of this embodiment will be described. Figure 15 This is a schematic diagram of the substrate processing unit 100. Additionally, Figure 15 In the substrate processing unit 100, the shielding member 140 is supplied with two processing liquids from the first processing liquid supply unit 130A and the second processing liquid supply unit 130B. Apart from this point, it has the same characteristics as described above. Figure 3 The substrate processing unit 100 described herein has the same configuration, and repeated descriptions are omitted to avoid lengthy descriptions.

[0188] The substrate processing unit 100 includes a first processing liquid supply unit 130A and a second processing liquid supply unit 130B. The first processing liquid supply unit 130A includes a discharge flow path 132A, a nozzle 134A, and a valve 136A. The second processing liquid supply unit 130B includes a discharge flow path 132B, a nozzle 134B, and a valve 136B.

[0189] In the substrate processing apparatus 10 of this embodiment, the cup body 180 includes a first cup body 182A, a first cup body driving unit 184A, a second cup body 182B, and a second cup body driving unit 184B. The first cup body 182A and the second cup body 182B are driven to switch according to the processing liquid supplied to the substrate W.

[0190] For example, when the first processing liquid supply unit 130A supplies processing liquid to the substrate W, the first cup body 182A rises to the side of the substrate W to recover the processing liquid. On the other hand, when the second processing liquid supply unit 130B supplies processing liquid to the substrate W, the second cup body 182B rises to the side of the substrate W to recover the processing liquid.

[0191] Next, refer to Figures 14-16 The substrate processing apparatus 10 used for circulating and supplying the two processing solutions will be described. Figure 16 This is a schematic diagram of the substrate processing unit 100 and the processing liquid unit 320 in the substrate processing apparatus 10.

[0192] like Figure 16 As shown, the processing fluid unit 320 includes flow path 333A, flow path 334A, flow path 333B, and flow path 334B. Flow path 333A and flow path 333B extend from vertically downward to vertically upward. Flow path 334A and flow path 334B extend from vertically upward to vertically downward. Processing fluids A and B flow from vertically downward to vertically upward through flow paths 333A and 333B respectively, and then flow from vertically upward to vertically downward through flow paths 334A and 334B respectively.

[0193] Flow path 333A has a main flow path 333Aa and a detour flow path 33AU. Here, the main flow path 333Aa extends vertically downwards and upwards. The detour flow path 33AU extends from the end of one of the main flow paths 333Aa. Typically, the detour flow path 33AU extends horizontally from the main flow path 333Aa. The detour flow path 33AU extends from one of the main flow paths 333Aa and connects to another main flow path 333Aa. The detour flow path 33AU connects to the discharge flow path 132A. (Refer to the above text.) Figure 14 and Figure 15 As described above, the processing liquid A enters the chamber 110 via the discharge flow path 132A and is discharged from the nozzle 134A to the substrate W.

[0194] Similarly, flow path 333B has multiple main flow paths 333Ba and multiple bypass flow paths 33BU. Here, the main flow paths 333Ba extend vertically downwards and upwards. The bypass flow paths 33BU extend from the end of one of the main flow paths 333Ba. Typically, the bypass flow paths 33BU extend horizontally from the main flow paths 333Ba. The bypass flow paths 33BU extend from one of the main flow paths 333Ba and connect to another main flow path 333Ba. The bypass flow paths 33BU are connected to the discharge flow path 132B. (Refer to the above text.) Figure 14 and Figure 15 As described above, the processing liquid B enters the chamber 110 via the discharge flow path 132B and is discharged from the nozzle 134B to the substrate W.

[0195] The containment section 160 contains: a detour flow path 33UA for use with processed liquid A; a discharge flow path 132A for use with processed liquid A; a valve 136A disposed in the discharge flow path 132A; a detour flow path 33UB for use with processed liquid B; a discharge flow path 132B for use with processed liquid B; and a valve 136B disposed in the discharge flow path 132B. For example, the detour flow path 33UB, the discharge flow path 132B, and the valve 136B may also be disposed below the containment section 160, and the detour flow path 33UA, the discharge flow path 132A, and the valve 136A may be disposed above the containment section 160. As another example, the detour flow paths 33UB and 33UA may overlap in the containment section 160, the discharge flow paths 132B and 132A may overlap, and the valves 136B and 136A may overlap.

[0196] As described above, the substrate processing apparatus 10 of this embodiment is suitable for use with flammable processing liquids. For example, the processing liquid supplied from the first processing liquid supply unit 130A may be an IPA liquid, and the processing liquid supplied from the second processing liquid supply unit 130B may be an SMT liquid. Furthermore, when an SMT liquid is used in the processing of the substrate W, the SMT liquid used is preferably recycled separately from other processing liquids.

[0197] Next, refer to Figures 14-17 The substrate processing unit 100 in the substrate processing apparatus 10 of this embodiment will be described. Figure 17 This is a schematic diagram of the substrate processing apparatus 10. Additionally, it should be noted that... Figure 17 In order to avoid making the diagram too complicated, the flow path in the processing liquid unit 320 is omitted in the substrate processing apparatus 10.

[0198] like Figure 17As shown, the substrate processing unit 100 has a discharge section 118. The discharge section 118 is disposed on the side of the drive chamber 112. The discharge section 118 is connected to the discharge pipe of the chamber 110. Typically, the function of the discharge section 118 is to discharge the SMT liquid recovered by the cup 180 after the substrate W has been processed with SMT liquid. In each of the stacked substrate processing units 100, the discharge section 118 is disposed on the side of the drive chamber 112, and the discharge sections 118 of different levels are connected via discharge pipes 119. In this way, it is possible to recover a specific solution (e.g., SMT liquid) discharged from multiple substrate processing units 100.

[0199] Next, refer to Figures 14-18 The substrate processing apparatus 10 of this embodiment will be described. Figure 18 This is a schematic perspective view of the substrate processing unit 100 and the processing liquid unit 320 in the substrate processing apparatus 10. Additionally, Figure 18 In the substrate processing unit 100, the processing liquid unit 320 has dual piping 33DA and dual piping 33DB for circulating two types of processing liquids. Apart from this, it also has... Figure 8 The substrate processing apparatus 10 has the same configuration, and repeated descriptions are omitted to avoid lengthy descriptions.

[0200] like Figure 18 As shown, three substrate processing units 100 are arranged vertically. Furthermore, a processing liquid unit 320 extends vertically to the side of the substrate processing unit 100. The processing liquid unit 320 includes: a dual piping 33DA extending vertically; and a meandering flow path 33AU connected to the dual piping 33DA and housed within a housing 160. Figure 16 Dual piping 33DA includes Figure 14 and Figure 16 The flow paths 333A and 334A are shown.

[0201] Furthermore, the processing fluid unit 320 includes: a dual piping 33DB extending in the vertical direction; and a meandering flow path 33AB connected to the dual piping 33DB and housed within the housing 160. Figure 16 Dual piping 33DB includes Figure 14 and Figure 16 The flow paths 333B and 334B are shown.

[0202] Here, each substrate processing unit 100 is provided with a receiving section 160. In detail, the receiving section 160 is disposed on the side of the frame 114 of the substrate processing unit 100.

[0203] Next, refer to Figures 14-19 The substrate processing apparatus 10 of this embodiment will be described. Figure 19 This is a schematic diagram of the substrate processing apparatus 10. Additionally, Figure 19 In the substrate processing apparatus 10, two types of processing liquids flow in the processing liquid unit 320, and apart from this point, it has the same characteristics as described above. Figure 9 The substrate processing apparatus 10 described herein has the same configuration, and repeated descriptions are omitted to avoid lengthy descriptions.

[0204] like Figure 19 As shown, the containment section 160 contains the outgoing path 333Ab and the return path 333Ac of the flow path 333A, and also contains a portion of the discharge flow path 132A. Furthermore, the containment section 160 contains the outgoing path 333Bb and the return path 333Bc of the flow path 333B, and also contains a portion of the discharge flow path 132B.

[0205] like Figure 19 As shown, flow paths 333A and 334A of the processing fluid A are integrally formed as part of a dual piping 33DA outside the housing 160, while inside the housing 160, flow paths 333A and 334A are separate. The orientation of flow path 333A can be changed to a horizontal direction by means of a connector located at the end of flow path 333A, connecting to the outgoing path 333Ab and the return path 333Ac. Similarly, flow paths 333B and 334B of the processing fluid B are integrally formed as part of a dual piping 33DB outside the housing 160, while inside the housing 160, flow paths 333B and 334B are separate. The orientation of flow path 333B can be changed to a horizontal direction by means of a connector located at the end of flow path 333B, connecting to the outgoing path 333Bb and the return path 333Bc.

[0206] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the described embodiments and can be implemented in various forms without departing from its spirit. Furthermore, various inventions can be formed by appropriately combining the multiple constituent elements disclosed in the embodiments. For example, several constituent elements may be deleted from all the constituent elements shown in the embodiments. Furthermore, constituent elements from different embodiments may be appropriately combined. For ease of understanding, the drawings are schematically represented with each constituent element as the main body. For ease of drawing, the thickness, length, number, spacing, etc. of each constituent element shown in the drawings may sometimes differ from the actual situation. In addition, the material, shape, size, etc. of each constituent element shown in the embodiments are examples and are not particularly limited. Various changes can be made within the scope of the effect of the present invention without substantially departing from it.

[0207] [Industrial Applicability]

[0208] This invention is suitable for use in substrate processing apparatus.

[0209] [Explanation of Symbols]

[0210] 10: Substrate processing apparatus

[0211] 100: Substrate processing unit

[0212] 110: Chamber

[0213] 120: Substrate holding section

[0214] 130: Processing Fluid Supply Department

[0215] 130A: First Processing Fluid Supply Unit

[0216] 130B: Second Processing Fluid Supply Unit

[0217] W: Substrate.

Claims

1. A substrate processing apparatus comprising: a substrate processing unit configured to process a substrate; and a valve disposed in an exhaust flow path; wherein the bypass flow path has a forward flow path and a return flow path; a portion of the forward flow path is adjacent to or in contact with a portion of the return flow path; the exhaust flow path, the forward flow path, and the return flow path are disposed in a row in a horizontal direction or a vertical direction; and a portion of the bypass flow path extends parallel to and is disposed adjacent to or in contact with a portion of the exhaust flow path.

2. The substrate processing apparatus according to claim 1, further comprising a heat insulating material covering a portion of the bypass flow path and a portion of the exhaust flow path. A circulation flow path has a main flow path in which a heater that heats a processing liquid supplied to the substrate processing unit is arranged, a detour flow path that branches from the main flow path, and the processing liquid circulates through the main flow path and the detour flow path; and a discharge flow path that branches from the detour flow path and through which the processing liquid flows to the substrate processing unit.

3. The substrate processing apparatus according to claim 1, wherein the valve comprises a motor needle valve.

4. The substrate processing apparatus according to claim 1, further comprising a flow meter disposed in the exhaust flow path.

5. The substrate processing apparatus according to claim 1, wherein the valve comprises a three-way valve.

6. The substrate processing apparatus according to claim 1, further comprising a housing portion housing a portion of the bypass flow path, a portion of the exhaust flow path, and the valve.

7. The substrate processing apparatus according to claim 6, wherein the housing portion has a box with an upper opening and a lid covering the upper opening of the box.

8. The substrate processing apparatus according to claim 6 or 7, wherein the substrate processing unit comprises: a chamber configured to process the substrate; a substrate holding portion disposed in the chamber; a cup disposed in the chamber; a drive chamber in which a drive portion configured to drive the substrate holding portion and the cup is disposed; and a frame between the chamber and the drive chamber; and the housing portion is disposed laterally of the frame. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​

Citation Information

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