Integrated Sensing Device and Method of Manufacturing the Same

Abstract

The present application provides an integrated sensing device and a manufacturing method thereof. The integrated sensing device includes a substrate having a first pad and a second pad. The integrated sensing device also includes an isolation layer disposed on the substrate and exposing partial top surfaces of the first pad and the second pad. The integrated sensing device further includes a first sensing structure and a second sensing structure, which are disposed on the isolation layer and separated from each other. The integrated sensing device includes a first extended electrode electrically connected to the first sensing structure and the first pad. The integrated sensing device also includes a second extended electrode electrically connected to the second sensing structure and the second pad. The integrated sensing device further includes a waterproof barrier layer and a water-absorbing barrier layer, which are respectively disposed on the first sensing structure and the second sensing structure.

Description

Technical Field

[0001] Embodiments of the present application relate to a sensing device and a manufacturing method thereof, and particularly to an integrated sensing device and a manufacturing method thereof. Background Art

[0002] With the development of modern technology, sensors that convert external environmental characteristics into information (such as gas sensors, temperature sensors, humidity sensors, pressure sensors, etc.) have emerged accordingly. Due to the progress of semiconductor technology, the minimum size process has been continuously broken through, and the demand for integrating sensors with various functions into a single electronic device (such as a portable electronic device) has been increasing day by day, and it has become an essential element for next-generation smart homes and mobile devices. Among them, an integrated environmental monitoring device that can combine temperature sensing, humidity sensing, pressure sensing, and environmental gases is the most concerned project.

[0003] However, different from general sensing devices, the sensing chips of environmental monitoring devices must be exposed to the environment and face the threats of various environmental factors, so special packaging processes are required. If different sensing chips are directly arranged in adjacent areas, cross-interference may occur. For example, the moisture sensed by the humidity sensing chip may affect the gas sensing chip, resulting in inaccurate sensing results of the gas sensing chip; or, existing gas sensing chips often need to be paired with a heating plate to raise the temperature to more than 100 °C and continuously heat before gas sensing. However, such a high temperature may cause an increase in resistance and the detachment of water vapor (moisture) from the humidity sensing layer of the gas sensing chip, resulting in inaccurate sensing results of the humidity sensing chip.

[0004] Therefore, different sensing chips must be formed into independent blocks, and only through methods such as printed circuit board assembly and chip package assembly can the individual independent sensing chips be integrated into an integrated environmental monitoring device. Such an integrated environmental monitoring device has a large volume, resulting in limited applications (for example, it cannot be used in portable electronic devices such as smart phones and smart watches). Summary of the Invention

[0005] Embodiments of the present disclosure relate to an integrated sensing device and a manufacturing method thereof. In some embodiments of the present disclosure, a waterproof barrier layer and a water-absorbing barrier layer are respectively disposed on different sensing structures, so that these sensing structures can be disposed in adjacent areas without interfering with each other, achieving a wafer-level integrated sensing device. Thus, the size of the integrated sensing device can be effectively reduced, and the application range of the integrated sensing device can be expanded.

[0006] The embodiments disclosed herein include an integrated sensing device. The integrated sensing device includes a substrate having a first pad and a second pad. The integrated sensing device also includes an isolation layer disposed on the substrate and exposing partial top surfaces of the first pad and the second pad. The integrated sensing device further includes a first sensing structure and a second sensing structure disposed on the isolation layer and separated from each other. The integrated sensing device includes a first extended electrode electrically connected to the first sensing structure and the first pad. The integrated sensing device also includes a second extended electrode electrically connected to the second sensing structure and the second pad. The integrated sensing device further includes a waterproof barrier layer and a water-absorbing barrier layer respectively disposed on the first sensing structure and the second sensing structure.

[0007] The embodiments disclosed herein include a method for manufacturing an integrated sensing device. The method for manufacturing an integrated sensing device includes providing a substrate having a first pad and a second pad. The method for manufacturing an integrated sensing device also includes forming an isolation layer on the substrate. The isolation layer exposes partial top surfaces of the first pad and the second pad. The method for manufacturing an integrated sensing device further includes forming a first extended electrode on the isolation layer. The first extended electrode is connected to the first pad. The method for manufacturing an integrated sensing device includes forming a second extended electrode on the isolation layer. The second extended electrode is connected to the second pad. The method for manufacturing an integrated sensing device also includes respectively forming a first sensing structure and a second sensing structure on the first extended electrode and the second extended electrode. The first sensing structure and the second sensing structure are separated from each other. The method for manufacturing an integrated sensing device further includes forming a waterproof barrier layer on the isolation layer, the first extended electrode, the second extended electrode, and the first sensing structure. The method for manufacturing an integrated sensing device includes forming a water-absorbing barrier layer on the second sensing structure. Brief Description of the Drawings

[0008] The embodiments disclosed herein will be described in detail below with reference to the accompanying drawings. It should be noted that various feature components are not drawn to scale and are only for illustrative purposes. In fact, the dimensions of the elements may be enlarged or reduced to clearly show the technical features of the embodiments disclosed herein.

[0009] Figures 1 to 6 is a cross-sectional view showing the stages of manufacturing an integrated sensing device according to an embodiment of the present disclosure.

[0010] Figure 7 is a schematic diagram showing the structures of the waterproof barrier layer and the water-absorbing barrier layer according to an embodiment of the present disclosure.

[0011] Figure 8 is a cross-sectional view of an integrated sensing device according to another embodiment of the present disclosure.

[0012] Figure 9 is a cross-sectional view of an integrated sensing device according to another embodiment of the present disclosure.

[0013] Figure 10 is a cross-sectional view of an integrated sensing device according to another embodiment of the present disclosure.

[0014] Symbol description:

[0015] 100, 102, 104, 106: Integrated sensing device

[0016] 10: Substrate

[0017] 11: First pad

[0018] 11T: Top surface

[0019] 12: Second pad

[0020] 12T: Top surface

[0021] 20: Isolation layer

[0022] 21: First isolation layer

[0023] 22: Second isolation layer

[0024] 31: First extended electrode

[0025] 32: Second extended electrode

[0026] 41: First sensing structure

[0027] 41T: Top surface

[0028] 42: Second sensing structure

[0029] 42T: Top surface

[0030] 43: Third sensing structure

[0031] 51: Waterproof barrier layer

[0032] 511: First part

[0033] 511H: Hole

[0034] 512: Second part

[0035] 512H: Hole

[0036] 52: Water absorption barrier layer

[0037] 521: First part

[0038] 521H: Hole

[0039] 522: Second Part

[0040] 522H: Hole

[0041] 60: Heater

[0042] C1, C1’, C2, C2’: Center Line

[0043] H1, H2: Diameter

[0044] T1, T2: Thickness

[0045] ΔX1, ΔX2: Offset Detailed Implementation Manner

[0046] The following disclosure provides many different embodiments or examples for implementing different features of the present case. The following disclosure describes specific examples of each component and its arrangement to simplify the description. Of course, these specific examples are not used for limitation. For example, if the present disclosure embodiment describes that a first feature component is formed on or above a second feature component, it means that it may include an embodiment in which the above first feature component and the above second feature component are in direct contact, and may also include an embodiment in which an additional feature component is formed between the above first feature component and the above second feature component, so that the above first feature component and the second feature component may not be in direct contact.

[0047] It should be understood that additional operation steps may be implemented before, between, or after the method, and in other embodiments of the method, some operation steps may be replaced or omitted.

[0048] In addition, spatially related terms may be used, such as "below", "beneath", "lower", "above", "over", "higher", and similar terms. These spatially related terms are for facilitating the description of the relationship between one (some) element or feature component and another (some) element or feature component in the drawings. These spatially related terms include different orientations of the device during use or operation, as well as the orientations described in the drawings. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially related adjectives used therein will also be interpreted according to the turned orientation.

[0049] In the specification, the terms "about", "approximately", "substantially" generally mean within 20%, or within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The given quantity is an approximate quantity, that is, the meaning of "about", "approximately", "substantially" may still be implied even without specific description of "about", "approximately", "substantially".

[0050] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be understood that such terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with the context of the relevant art and this disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in an embodiment of this disclosure.

[0051] The different embodiments disclosed below may reuse the same reference signs and / or labels. These repetitions are for the purpose of simplicity and clarity and are not intended to limit a specific relationship between the different embodiments and / or structures discussed.

[0052] Figures 1 to 6 is a cross-sectional view showing the stages of manufacturing an integrated sensing device 100 according to an embodiment of this disclosure. It should be noted in particular that, for simplicity, Figures 1 to 6 some components of the integrated sensing device 100 may be omitted in

[0053] Referring to Figure 1 , first, a substrate 10 is provided. In some embodiments, the substrate 10 is, for example, a complementary metal-oxide-semiconductor (CMOS) substrate. For example, the material of the substrate 10 may include elemental semiconductors (e.g., silicon or germanium), compound semiconductors (e.g., silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP)), alloy semiconductors (e.g., SiGe, SiGeC, GaAsP, or GaInP), other suitable semiconductors, or combinations thereof, but the embodiments of this disclosure are not limited thereto. In some embodiments, the substrate 10 may be a semiconductor-on-insulator (SOI) substrate. The aforementioned semiconductor-on-insulator substrate may include a bottom plate, a buried oxide layer disposed on the bottom plate, and a semiconductor layer disposed on the buried oxide layer. In some embodiments, the substrate 10 may be a semiconductor wafer (e.g., a silicon wafer or other suitable semiconductor wafer).

[0054] In some embodiments, the substrate 10 may include various p-type doped regions and / or n-type doped regions formed by processes such as ion implantation and / or diffusion. For example, the aforementioned doped regions may be configured to form transistors, photodiodes, and / or light-emitting diodes, but the embodiments of this disclosure are not limited thereto.

[0055] In some embodiments, the substrate 10 may include various isolation features to separate different device regions in the substrate 10. For example, the isolation features may include shallow trench isolation (STI) features, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the step of forming the shallow trench isolation may include etching a trench in the substrate 10 and filling the trench with an insulating material (e.g., silicon oxide, silicon nitride, or silicon oxynitride). The filled trench may have a multi-layer structure (e.g., a thermal oxide liner and silicon nitride filled in the trench). A chemical mechanical polishing (CMP) process may be performed to polish the excess insulating material and planarize the upper surface of the isolation feature.

[0056] In some embodiments, the substrate 10 may include various conductive features (e.g., conductive lines or vias). As Figure 1 shown, the substrate 10 has a first pad 11 and a second pad 12. For example, the materials of the first pad 11 and the second pad 12 may include aluminum (Al), copper (Cu), tungsten (W), their respective alloys, other suitable conductive materials, or combinations of the foregoing, but the embodiments of the present disclosure are not limited thereto.

[0057] Referring to Figure 2 , a first isolation layer 21 is formed on the substrate 10. Specifically, the first isolation layer 21 is a patterned isolation layer, and the first isolation layer 21 may cover the substrate 10, the first pad 11, and the second pad 12, and expose a partial top surface 11T of the first pad 11 and a partial top surface 12T of the second pad 12.

[0058] For example, a first isolation material may be first formed on the substrate 10, and the first isolation material may cover the substrate 10, the first pad 11, and the second pad 12. The first isolation material may include oxides (e.g., silicon oxide), nitrides (e.g., silicon nitride, aluminum nitride), other similar materials, or combinations of the foregoing, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the first isolation material may be formed on the substrate 10, the first pad 11, and the second pad 12 through a deposition process. For example, the deposition process may include chemical vapor deposition, atomic layer deposition, molecular beam epitaxy, liquid phase epitaxy, other similar processes, or combinations of the foregoing, but the embodiments of the present disclosure are not limited thereto.

[0059] Next, a patterning process can be performed on the first isolation material to form the first isolation layer 21. The patterning process may include disposing a mask layer (not shown) on the first isolation material, and then using the aforementioned mask layer as an etching mask to perform an etching process to etch the first isolation material, so as to expose a partial top surface 11T of the first pad 11 and a partial top surface 12T of the second pad 12.

[0060] In some embodiments, the formation of the mask layer may include a deposition process, a photolithography process, other suitable processes, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto. For example, the deposition process includes spin-on coating, chemical vapor deposition, atomic layer deposition, similar processes, or a combination of the foregoing; the photolithography process may include photoresist coating (such as spin-on coating), soft baking, mask aligning, exposure, post-exposure baking (PEB), developing, rinsing, drying (such as hard baking), other suitable processes, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto.

[0061] In some embodiments, the aforementioned etching process may include a dry etching process, a wet etching process, or a combination of the foregoing. For example, the dry etching process may include reactive ion etch (RIE), inductively-coupled plasma (ICP) etching, neutral beam etch (NBE), electron cyclotron resonance (ERC) etching, similar etching processes, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto. For example, the wet etching process may use, for example, hydrofluoric acid (HF), ammonium hydroxide (NH4OH), or any suitable etchant.

[0062] Refer to Figure 3 , a second isolation layer 22 is formed on the first isolation layer 21. Specifically, the second isolation layer 22 is a patterned isolation layer, and the second isolation layer 22 can cover the first isolation layer 21 and expose a partial top surface 11T of the first pad 11 and a partial top surface 12T of the second pad 12.

[0063] Similarly, a second insulating material may be first formed on the first insulating layer 21. Subsequently, a patterning process may be performed on the second insulating material to form a second insulating layer 22. The patterning process may include disposing a mask layer (not shown) on the second insulating material, and then using the aforementioned mask layer as an etching mask to perform an etching process to etch the second insulating material to expose a partial top surface 11T of the first pad 11 and a partial top surface 12T of the second pad 12. Examples of the patterning process are as described above and will not be elaborated herein.

[0064] In some embodiments, the second insulating material is different from the first insulating material, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the second insulating material may be the same as the first insulating material. As Figure 3 shown, the first insulating layer 21 and the second insulating layer 22 may be regarded as an insulating layer 20. In addition, the insulating layer 20 (the first insulating layer 21, the second insulating layer 22) may be regarded as a passivation layer of the integrated sensing device 100.

[0065] Referring to Figure 4 , a first extended electrode 31 is formed on the insulating layer 20 (the second insulating layer 22), and a second extended electrode 32 is formed on the insulating layer 20 (the second insulating layer 22). As Figure 4 shown, the first extended electrode 31 is connected to the first pad 11, and the second extended electrode 32 is connected to the second pad 12. That is, the first extended electrode 31 may directly contact the exposed partial top surface 11T of the first pad 11, and the second extended electrode 32 may directly contact the exposed partial top surface 12T of the second pad 12. In this embodiment, the first extended electrode 31 and the second extended electrode 32 are separated from each other.

[0066] In some embodiments, the materials of the first extended electrode 31 and the second extended electrode 32 may include metals, metal silicides, similar materials, or combinations of the foregoing, but the embodiments of the present disclosure are not limited thereto. For example, the metal may be gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), copper (Cu), similar materials, alloys of the foregoing, or combinations of the foregoing, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the first extended electrode 31 and the second extended electrode 32 may be formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, evaporation, sputtering, similar processes, or combinations of the foregoing, but the embodiments of the present disclosure are not limited thereto.

[0067] Referring to Figure 5, a first sensing structure 41 and a second sensing structure 42 are respectively formed on the first extended electrode 31 and the second extended electrode 32. As Figure 5 shown, the first sensing structure 41 and the second sensing structure 42 are separated from each other. In some embodiments, the first sensing structure 41 can be a gas sensor, and the second sensing structure 42 can be a humidity sensor, but the embodiments of the present disclosure are not limited thereto.

[0068] Referring to Figure 6 , a waterproof barrier layer 51 is formed on the isolation layer 20 (second isolation layer 22), the first extended electrode 31, the second extended electrode 32, and the first sensing structure 41. Specifically, the waterproof barrier layer 51 can directly contact the top surface 41T of the first sensing structure 41. In this embodiment, the waterproof barrier layer 51 is a film layer that is waterproof, oil-proof, but allows gas to pass through.

[0069] Referring to Figure 6 , a water-absorbing barrier layer 52 is formed on the second sensing structure 42. Specifically, the water-absorbing barrier layer 52 can directly contact the top surface 42T of the second sensing structure 42. In this embodiment, the water-absorbing barrier layer 52 is oil-proof, but allows water and gas to pass through.

[0070] In some embodiments, the materials of the waterproof barrier layer 51 and the water-absorbing barrier layer 52 include fluorocarbons, such as polytetrafluoroethylene (PTFE), fluorocarbons of perfluoroalkyl (C4-C18 perfluoroalkylchain), but the embodiments of the present disclosure are not limited thereto. In addition, the material of the water-absorbing barrier layer 52 can be pre-treated with sulfonic acid or phosphoric acid.

[0071] Furthermore, the material of the water-absorbing barrier layer 52 can include a fluorine-containing material and a bronze-like compound (A x M y O z, wherein A is a cation, such as a hydrogen ion, an alkali metal ion, an alkaline earth metal ion, a rare earth metal ion, an ammonium ion or a combination thereof; M is a transition metal ion, a metalloid ion or a carbon ion; O is oxygen, and x, y and z are integers to achieve charge balance) derived complex. The fluorine-containing material may include one or more fluorine-containing materials such as sulfonated perfluoroalkane compounds (alkyl sulfonic acid / sulfonate fluorosurfactant), sulfonated fluoropolymers (such as perfluorosulfonic acid (PFSA) / polytetrafluoroethylene (PTFE) copolymer), and phosphorylated perfluoroalkane compounds (such as alkyl phosphate ester fluorosurfactant). In some embodiments, the material of the water-absorbing barrier layer 52 may also contain 0.1% to 15% of an aqueous polymer, such as: polyvinyl alcohol (PVA), polyacrylamide (PAM or PAAM), polyethyleneimine (PEI), methyl cellulose (MC), hydroxyethyl cellulose (HEC), hydroxyethyl methyl cellulose (HEMC), hydroxypropyl cellulose (HPC), hydroxypropyl methylcellulose (HPMC), but the embodiments of the present disclosure are not limited thereto.

[0072] In some embodiments, the water-absorbing barrier layer 52 may be formed by a first layer and a second layer. Specifically, the surface of the area of the first layer is first treated by plasma treatment or ultraviolet-ozone treatment, and then a bronze compound or a bronze compound-hydrophilic polymer composite is coated / deposited. After heat treatment, the first layer is formed. Then, a fluorine-containing material is coated / deposited on the first layer, and after heat treatment, the second layer is formed. In some embodiments, the water-absorbing barrier layer 52 may be formed by a fluorine-containing material-bronze compound composite. Specifically, the fluorine-containing material and the bronze compound form a fluorine-containing material-bronze compound composite and are pre-configured in a solvent system. The area of the water-absorbing barrier layer 52 is first treated by plasma treatment or ultraviolet-ozone treatment on the surface. Then, the fluorine-containing material-bronze compound composite is coated / deposited, and after heat treatment, the water-absorbing barrier layer 52 is formed. In some embodiments, the area of the water-absorbing barrier layer 52 is first treated by plasma treatment or ultraviolet-ozone treatment on the surface and a hydrophilic polymer is coated. After heat treatment, the fluorine-containing material-bronze compound composite is then coated / deposited; then, after further heat treatment, the water-absorbing barrier layer 52 is formed.

[0073] In some embodiments, the water-absorbing barrier layer 52 may be formed by a fluorine-containing material-bronze compound-hydrophilic polymer composite. Specifically, the fluorine-containing material, the bronze compound, and the hydrophilic polymer form a fluorine-containing material-bronze compound-hydrophilic polymer composite and are pre-configured in a solvent system. The area of the water-absorbing barrier layer 52 is first treated by plasma treatment or ultraviolet-ozone treatment on the surface. Then, the fluorine-containing material-bronze compound-hydrophilic polymer composite is coated / deposited, and after heat treatment, the water-absorbing barrier layer is formed. In some embodiments, the area of the water-absorbing barrier layer 52 is first treated by plasma treatment or ultraviolet-ozone treatment on the surface and a hydrophilic polymer is coated. After heat treatment, the fluorine-containing material-bronze compound-hydrophilic polymer composite is then coated / deposited; then, after further heat treatment, the water-absorbing barrier layer 52 is formed.

[0074] In some embodiments, the water-proof barrier layer 51 and the water-absorbing barrier layer 52 may be respectively formed on the first sensing structure 41 and the second sensing structure 42 by spin-on coating, additive manufacturing (AM) (3D printing), etc., but the embodiments of the present disclosure are not limited thereto.

[0075] Figure 7 is a schematic diagram showing the structures of the water-proof barrier layer 51 and the water-absorbing barrier layer 52 according to an embodiment of the present disclosure. As Figure 7As shown, in some embodiments, the waterproof barrier layer 51 is a porous structure. In this embodiment, the waterproof barrier layer 51 may include a first portion 511 and a second portion 512, and the second portion 512 is disposed on the first portion 511 (for example, the second portion 512 is stacked on the first portion 511). Figure 7 As shown, the first portion 511 and the second portion 512 include a plurality of holes 511H and holes 512H respectively, and the holes 511H and holes 512H do not completely overlap each other. Specifically, the center line C1 of the hole 511H and the center line C2 of the corresponding hole 512H have an offset ΔX1.

[0076] In some embodiments, the cross-section of each hole 511H of the first portion 511 and each hole 512H of the second portion 512 may have the same diameter H1, and the diameter H1 may be between about 0.01 and about 100 μm, but the disclosed embodiment is not limited thereto. In some embodiments, the thickness T1 of the waterproof barrier layer 51 (i.e., the sum of the thickness of the first portion 511 and the thickness of the second portion 512) may be between about 0.5 and about 750 μm, but the disclosed embodiment is not limited thereto.

[0077] It is important to note that Figure 7 The waterproof barrier layer 51 shown includes only one first portion 511 and one second portion 512, but the disclosed embodiment is not limited thereto. In some other embodiments, the waterproof barrier layer 51 may include multiple first portions 511 and multiple second portions 512, and these first portions 511 and second portions 512 may be stacked alternately with each other. In addition, the number of the first portions 511 of the waterproof barrier layer 51 may be different from the number of the second portions 512 of the waterproof barrier layer 51.

[0078] Similarly, if Figure 7 As shown, in some embodiments, the water-absorbing barrier layer 52 is a porous structure. In this embodiment, the water-absorbing barrier layer 52 may include a first portion 521 and a second portion 522, and the second portion 522 is disposed on the first portion 521 (for example, the second portion 522 is stacked on the first portion 521). Figure 7 As shown, the first portion 521 and the second portion 522 include a plurality of holes 521H and holes 522H respectively, and the holes 521H and holes 522H do not completely overlap each other. Specifically, the center line C1 ′ of the hole 521H and the center line C2 ′ of the corresponding hole 522H have an offset ΔX2 .

[0079] In some embodiments, each hole 521H of the first part 521 and each hole 522H of the second part 522 may have the same cross-sectional diameter H2, and the diameter H2 may be between about 0.01 and about 100 μm, but the embodiments disclosed herein are not limited thereto. In some embodiments, the thickness T2 of the water-absorbing barrier layer 52 (i.e., the sum of the thicknesses of the first part 521 and the second part 522) may be between about 0.5 and about 500 μm, but the embodiments disclosed herein are not limited thereto.

[0080] It should be particularly noted that Figure 7 The shown water-absorbing barrier layer 52 only includes one first part 521 and one second part 522, but the embodiments disclosed herein are not limited thereto. In some other embodiments, the water-absorbing barrier layer 52 may include a plurality of first parts 521 and a plurality of second parts 522, and these first parts 521 and second parts 522 may be stacked alternately with each other. In addition, the number of the first parts 521 of the water-absorbing barrier layer 52 may be different from the number of the second parts 522 of the water-absorbing barrier layer 52.

[0081] As Figure 6 As shown, the embodiments disclosed herein provide an integrated sensing device 100. The integrated sensing device 100 includes a substrate 10, and the substrate 10 has a first pad 11 and a second pad 12. The integrated sensing device 100 also includes an insulating layer 20, and the insulating layer 20 is disposed on the substrate 10 and exposes partial top surfaces (11T) of the first pad 11 and partial top surfaces (12T) of the second pad 12. The integrated sensing device 100 further includes a first sensing structure 41 and a second sensing structure 42, and the first sensing structure 41 and the second sensing structure 42 are disposed on the insulating layer 20 and separated from each other. The integrated sensing device 100 includes a first extended electrode 31, and the first extended electrode 31 is electrically connected to the first sensing structure 41 and the first pad 11. The integrated sensing device 100 also includes a second extended electrode 32, and the second extended electrode 32 is electrically connected to the second sensing structure 42 and the second pad 12. The integrated sensing device 100 further includes a waterproof barrier layer 51 and a water-absorbing barrier layer 52, and the waterproof barrier layer 51 and the water-absorbing barrier layer 52 are respectively disposed on the first sensing structure 41 and the second sensing structure 42.

[0082] In the embodiments disclosed herein, the waterproof barrier layer 51 may cover (directly contact) the first sensing structure 41, and the water-absorbing barrier layer 52 may cover (directly contact) the second sensing structure 42. Therefore, the first sensing structure 41 and the second sensing structure 42 do not need to form independent blocks, but may be disposed in adjacent areas without interfering with each other, achieving a chip-level integrated sensing device. Thereby, the size of the integrated sensing device 100 can be effectively reduced, and the application range of the integrated sensing device 100 can be expanded.

[0083] Figure 8 is a cross-sectional view of the integrated sensing device 102 according to another embodiment of the present disclosure. Similarly, for simplicity, Figure 8 some components of the integrated sensing device 102 may be omitted.

[0084] Figure 8 the illustrated integrated sensing device 102 has a structure similar to that of Figure 6 the illustrated integrated sensing device 100. That is, the integrated sensing device 102 includes a substrate 10 having a first pad 11 and a second pad 12. The integrated sensing device 102 also includes an isolation layer 20 disposed on the substrate 10 and exposing partial top surfaces of the first pad 11 and the second pad 12. The integrated sensing device 102 further includes a first sensing structure 41 and a second sensing structure 42, the first sensing structure 41 and the second sensing structure 42 being disposed on the isolation layer 20 and separated from each other. The integrated sensing device 102 includes a first extended electrode 31 electrically connected to the first sensing structure 41 and the first pad 11. The integrated sensing device 102 also includes a second extended electrode 32 electrically connected to the second sensing structure 42 and the second pad 12.

[0085] In this embodiment, the first sensing structure 41 and the second sensing structure 42 are separated from each other. The first sensing structure 41 may be a gas sensor, and the second sensing structure 42 may be a humidity sensor. The integrated sensing device 102 further includes a waterproof barrier layer 51 and a water-absorbing barrier layer 52, the waterproof barrier layer 51 and the water-absorbing barrier layer 52 being disposed on the first sensing structure 41 and the second sensing structure 42 respectively.

[0086] Differing from Figure 6 the illustrated integrated sensing device 100 is that Figure 8 the illustrated integrated sensing device 102 further includes a third sensing structure 43 disposed on the isolation layer 20 (second isolation layer 22) and separated from the first sensing structure 41 and the second sensing structure 42.

[0087] In some embodiments, the third sensing structure 43 may be (at least partially) embedded in the isolation layer 20 (second isolation layer 22). In addition, in a top view (not shown) of the integrated sensing device 102, the third sensing structure 43 may be disposed between the first sensing structure 41 and the second sensing structure 42 and separated from the first sensing structure 41 and the second sensing structure 42, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the third sensing structure 43 may also be disposed at other positions in the integrated sensing device 102.

[0088] In Figure 8In the illustrated embodiment, the third sensing structure 43 is a temperature sensor, but the embodiments of the present disclosure are not limited thereto. For example, the third sensing structure 43 may also be an accelerometer, a fingerprint recognition sensor, a flow meter, a gyroscope, an image sensor, an infrared sensor, a light sensor, a pressure sensor, a touch sensor, a particle sensor, other suitable sensors, or a combination thereof.

[0089] As Figure 8 shown, a waterproof barrier layer 51 may be formed on the third sensing structure 43. Specifically, the waterproof barrier layer 51 may directly contact the top surface of the third sensing structure 43, but the embodiments of the present disclosure are not limited thereto. Since the waterproof barrier layer 51 is a film layer that is waterproof, oil-proof, but allows gas to pass through, it can prevent the third sensing structure 43 from being interfered by water.

[0090] Since the value of the relative humidity in the environment changes according to the temperature, in the example where the second sensing structure 42 is a humidity sensor and the third sensing structure 43 is a temperature sensor, the second sensing structure 42 can be adjusted according to the sensing result of the third sensing structure 43 to provide a more accurate relative humidity. For example, there may be a large difference between the temperature at the production site of the integrated sensing device 102 and the temperature in the actual sales area. However, since the second sensing structure 42 of the integrated sensing device 102 can adjust the sensed value it displays according to the sensing result of the third sensing structure 43, the user can measure a relative humidity that is more in line with the local environment.

[0091] Figure 9 is a cross-sectional view of an integrated sensing device 104 according to another embodiment of the present disclosure. Similarly, for simplicity, Figure 9 some components of the integrated sensing device 104 may be omitted in the

[0092] Figure 9 The integrated sensing device 104 shown has the same as Figure 6A structure similar to the integrated sensing device 100 shown. That is, the integrated sensing device 104 includes a substrate 10 having a first pad 11 and a second pad 12. The integrated sensing device 104 also includes an insulating layer 20 disposed on the substrate 10 and exposing a partial top surface of the first pad 11 and a partial top surface of the second pad 12. The integrated sensing device 104 further includes a first sensing structure 41 and a second sensing structure 42, the first sensing structure 41 and the second sensing structure 42 being disposed on the insulating layer 20 and separated from each other. The integrated sensing device 104 includes a first extended electrode 31 electrically connected to the first sensing structure 41 and the first pad 11. The integrated sensing device 104 also includes a second extended electrode 32 electrically connected to the second sensing structure 42 and the second pad 12.

[0093] In this embodiment, the first sensing structure 41 and the second sensing structure 42 are separated from each other. The first sensing structure 41 can be a gas sensor, and the second sensing structure 42 can be a humidity sensor. The integrated sensing device 104 further includes a waterproof barrier layer 51 and a water-absorbing barrier layer 52, the waterproof barrier layer 51 and the water-absorbing barrier layer 52 being disposed on the first sensing structure 41 and the second sensing structure 42 respectively.

[0094] And Figure 6 Different from the integrated sensing device 100 shown, Figure 9 The integrated sensing device 104 shown further includes a heater 60 disposed in the insulating layer 20 (second insulating layer 22) and located between the substrate 10 and the first sensing structure 41 and the second sensing structure 42. Specifically, the heater 60 can be embedded in the insulating layer 20 (second insulating layer 22) and located below the first sensing structure 41 and the second sensing structure 42.

[0095] In this embodiment, the heating temperature of the heater 60 is between approximately 50°C and approximately 80°C, but the disclosed embodiments are not limited thereto. In addition, compared with existing gas sensing chips, the heater 60 of this embodiment can sense gas without continuous heating. In some embodiments, the heater 60 can provide an integrated sensing device 104 for calibration, reset function, and improve the response of the sensor (e.g., the first sensing structure 41). Specifically, the calibration of the integrated sensing device 104 provided by the heater 60 means that data comparison and calibration can be performed using the information feedback at different temperatures. For example, in a standard humidity environment, signals at 25°C, 32°C, 40°C, and 50°C can be captured from a standard sample to adjust the threshold, but the disclosed embodiments are not limited thereto. The reset of the integrated sensing device 104 provided by the heater 60 ensures that the adsorbed sample is completely driven away from the sensing layer of the integrated sensing device 104. For example, a reset can be performed to ensure that the adsorbed alcohol is removed, or a reset can be performed to ensure that the adsorbed water vapor is removed.

[0096] Compared with existing gas sensing chips, the heating plate they are paired with must raise the temperature to over 100°C and continuously heat, and there are many specifications for the operation time and spatial position to operate properly, so it is not yet suitable for the application of portable devices. The heater 60 of the integrated sensing device 104 does not need to raise the temperature too high and does not need continuous heating, which can effectively prevent the increase in resistance and avoid the problem of high-temperature cross-interference in the integrated sensing device, so as to improve the overall sensing accuracy.

[0097] Figure 10 is a cross-sectional view of an integrated sensing device 106 according to another embodiment of the present disclosure. Similarly, for simplicity, Figure 10 some components of the integrated sensing device 106 may be omitted.

[0098] Figure 10 The illustrated integrated sensing device 106 has the same as Figure 9A structure similar to the integrated sensing device 104 shown. That is, the integrated sensing device 106 includes a substrate 10 having a first pad 11 and a second pad 12. The integrated sensing device 106 also includes an isolation layer 20 disposed on the substrate 10 and exposing a partial top surface of the first pad 11 and a partial top surface of the second pad 12. The integrated sensing device 106 further includes a first sensing structure 41 and a second sensing structure 42, the first sensing structure 41 and the second sensing structure 42 being disposed above the isolation layer 20 and separated from each other. The integrated sensing device 106 includes a first extended electrode 31, the first extended electrode 31 being electrically connected to the first sensing structure 41 and the first pad 11. The integrated sensing device 106 also includes a second extended electrode 32, the second extended electrode 32 being electrically connected to the second sensing structure 42 and the second pad 12.

[0099] In this embodiment, the first sensing structure 41 and the second sensing structure 42 are separated from each other. The first sensing structure 41 can be a gas sensor, and the second sensing structure 42 can be a humidity sensor. The integrated sensing device 106 further includes a waterproof barrier layer 51 and a water-absorbing barrier layer 52, the waterproof barrier layer 51 and the water-absorbing barrier layer 52 being disposed above the first sensing structure 41 and the second sensing structure 42 respectively.

[0100] And Figure 9 Different from the integrated sensing device 104 shown, Figure 10 The integrated sensing device 106 shown further includes a third sensing structure 43, the third sensing structure 43 being adjacent to but separated from the heater 60. Specifically, the third sensing structure 43 is disposed in the isolation layer 20 (second isolation layer 22) and located between the substrate 10 and the waterproof barrier layer 51.

[0101] In Figure 10 The embodiment shown, the third sensing structure 43 is a temperature sensor, but the embodiments disclosed herein are not limited thereto. Other examples of the third sensing structure 43 are as described above and will not be elaborated herein.

[0102] In summary, in the embodiments disclosed herein, the waterproof barrier layer can cover (directly contact) the first sensing structure, and the water-absorbing barrier layer can cover (directly contact) the second sensing structure. Therefore, the first sensing structure and the second sensing structure do not need to form independent blocks, but can be disposed in adjacent areas without interfering with each other, achieving a chip-level integrated sensing device. Thereby, the size of the integrated sensing device can be effectively reduced, and the application range of the integrated sensing device can be expanded.

[0103] Furthermore, in some embodiments, the integrated sensing device may further include a third sensing structure and / or a heater, which can provide calibration and reset functions for the integrated sensing device and improve the response and / or accuracy of the sensor.

[0104] The foregoing outlines components of several embodiments so that those of ordinary skill in the art to which this disclosure pertains can better understand the perspective of the embodiments of this disclosure. Those of ordinary skill in the art to which this disclosure pertains should understand that they can, based on the embodiments of this disclosure, design or modify other processes and structures to achieve the same purposes and / or advantages as the embodiments introduced herein. Those of ordinary skill in the art to which this disclosure pertains should also understand that such equivalent structures do not depart from the spirit and scope of this disclosure, and they can make various changes, substitutions, and replacements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the scope of the appended patent application. Additionally, although this disclosure has been disclosed above in several preferred embodiments, it is not intended to limit this disclosure.

[0105] References throughout this specification to features, advantages, or similar language do not imply that all features and advantages that can be realized with this disclosure should or can be achieved in any single embodiment of this disclosure. Rather, language referring to features and advantages is understood to mean that a particular feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of this disclosure. Thus, the discussions of features and advantages, and similar language, throughout this specification may, but do not necessarily, refer to the same embodiment.

[0106] Furthermore, in one or more embodiments, the described features, advantages, and characteristics of this disclosure can be combined in any suitable manner. Based on the description herein, those skilled in the relevant art will recognize that this disclosure can be implemented without one or more specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be identified in certain embodiments that may not be present in all embodiments of this disclosure.

Claims

1. An integrated sensing device, characterized in that, Comprising: A substrate having a first pad and a second pad; An isolation layer disposed on the substrate and exposing a partial top surface of the first pad and a partial top surface of the second pad; A first sensing structure and a second sensing structure disposed above the isolation layer and separated from each other; A first extension electrode electrically connected to the first sensing structure and the first pad; A second extension electrode electrically connected to the second sensing structure and the second pad; A waterproof barrier layer covering the first sensing structure, the first extension electrode, and the second extension electrode, and exposing the second sensing structure; And A water-absorbing barrier layer disposed on the waterproof barrier layer and covering the exposed second sensing structure.

2. The integrated sensing device according to claim 1, wherein The water-absorbing barrier layer directly contacts the top surface of the second sensing structure.

3. The integrated sensing device according to claim 1, wherein The first sensing structure is a gas sensor, and the second sensing structure is a humidity sensor.

4. The integrated sensing device according to claim 3, wherein Further comprising: A third sensing structure disposed above the isolation layer and separated from the first sensing structure and the second sensing structure.

5. The integrated sensing device according to claim 4, wherein, In a top view of the integrated sensing device, the third sensing structure is disposed between the first sensing structure and the second sensing structure.

6. The integrated sensing device according to claim 3, wherein Further comprising: A heater disposed in the isolation layer and between the substrate and the first sensing structure and the second sensing structure.

7. The integrated sensing device according to claim 1, wherein The waterproof barrier layer is a porous structure, and the water-absorbing barrier layer is a porous structure.

8. The integrated sensing device according to claim 7, wherein, The waterproof barrier layer includes a first portion and a second portion, the second portion is disposed above the first portion, and the first portion and the second portion respectively include a plurality of holes.

9. The integrated sensing device according to claim 8, wherein A center line of a hole in the first portion and a center line of a corresponding hole in the second portion have an offset.

10. The integrated sensing device according to claim 7, wherein The water-absorbing barrier layer includes a first portion and a second portion, the second portion is disposed above the first portion, and the first portion and the second portion respectively include a plurality of holes.

11. The integrated sensing device according to claim 10, wherein A center line of a hole in the first portion and a center line of a corresponding hole in the second portion have an offset.

12. The integrated sensing device according to claim 1, wherein The material of the waterproof barrier layer and the material of the water-absorbing barrier layer contain fluorocarbons.

13. A manufacturing method of an integrated sensing device, characterized in that, Comprising: Providing a substrate having a first pad and a second pad; Forming an isolation layer on the substrate, wherein the isolation layer exposes a partial top surface of the first pad and a partial top surface of the second pad; Forming a first extension electrode on the isolation layer, wherein the first extension electrode is connected to the first pad; Forming a second extension electrode on the isolation layer, wherein the second extension electrode is connected to the second pad; Forming a first sensing structure and a second sensing structure respectively on the first extension electrode and the second extension electrode, wherein the first sensing structure and the second sensing structure are separated from each other; Covering the isolation layer, the first extension electrode, the second extension electrode, and the first sensing structure with a waterproof barrier layer, and exposing the second sensing structure; And Forming a water-absorbing barrier layer on the waterproof barrier layer and covering the exposed second sensing structure.

14. The manufacturing method of the integrated sensing device according to claim 13, characterized in that, The step of forming the isolation layer on the substrate includes: forming a first isolation material on the substrate; patterning the first isolation material to form a first isolation layer, wherein the first isolation layer exposes part of the top surface of the first pad and part of the top surface of the second pad; forming a second isolation material on the first isolation layer, wherein the second isolation material is different from the first isolation material; and patterning the second isolation material to form a second isolation layer, wherein the second isolation layer exposes part of the top surface of the first pad and part of the top surface of the second pad.

15. The manufacturing method of the integrated sensing device according to claim 13, characterized in that, The materials of the waterproof barrier layer and the water absorption barrier layer include fluorocarbons, and the material of the water absorption barrier layer is pre-treated with a bronze compound or an aqueous polymer to form a composite.

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