Semiconductor device manufacturing apparatus and manufacturing method

Abstract

The present invention provides a manufacturing device and a manufacturing method for a semiconductor device, which can adjust the holding surface of a bonding head to be parallel to the plane of a stage with high precision in a simple sequence. The manufacturing device for a semiconductor device includes: a stage; a bonding head; a profiling mechanism provided on the bonding head; and a controller, which performs a profiling process, in which the facing surface, which is a holding surface or a chip end surface, is adjusted to be parallel to the reference surface by making the facing surface imitate the reference surface, which is the plane of the stage or the substrate, and in the profiling process, before the axial position of the bonding head reaches a predetermined reference position, the controller switches the profiling mechanism to a free state, makes the facing surface abut against the reference surface, and maintains the state to make the bonding head relatively move in the surface direction of the reference surface, and switches the profiling mechanism to a locked state when the axial position reaches the reference position.

Description

Technical Field

[0001] This specification discloses a manufacturing apparatus and a manufacturing method for manufacturing a semiconductor device by bonding a semiconductor chip to a substrate using a bonding head having a profiling mechanism. Background Art

[0002] Since ancient times, the following technology has been widely known: in a state where a semiconductor chip is sucked and held on the front end surface of a bonding head (hereinafter referred to as a "holding surface"), a bonding head is driven to bond the semiconductor chip to a substrate, thereby manufacturing a semiconductor device. In the semiconductor device manufacturing technology, in order to bond the semiconductor chip to the surface of the substrate well, the holding surface is required to be parallel to the plane of the substrate with high accuracy.

[0003] In order to make the holding surface parallel to the substrate in a simple sequence, a manufacturing device is also known in which a profiling mechanism is mounted on a bonding head. Here, the profiling mechanism refers to a mechanism that has a fixed member including one of a concave spherical surface and a convex spherical surface, and a movable member including the other of the concave spherical surface and the convex spherical surface, and the movable member can swing three-dimensionally relative to the fixed member. The profiling mechanism can switch between a free state in which the swing of the movable member is enabled, and a locked state in which the swing of the movable member is restricted.

[0004] Patent Document 1 discloses a bonding head equipped with such a profiling mechanism. In Patent Document 1, with the profiling mechanism set in a free state, a second object held by the bonding head is brought into contact with and pressed against a first object held on a stage, thereby adjusting the contact surface of the second object to be parallel to the surface of the first object.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent No. 3919684 Summary of the invention

[0008] Problems to be solved by the invention

[0009] According to the technology of Patent Document 1, the holding surface of the bonding head can be made parallel to the stage to a certain extent in a simple sequence. However, when the holding surface of the bonding head or the second object held by the bonding head is simply pushed against the stage or the first object held by the stage, the holding surface may not be completely parallel due to the influence of friction, etc. That is, in the prior art, it is difficult to adjust the holding surface of the bonding head to be parallel to the plane of the stage with high precision.

[0010] Therefore, this specification discloses a semiconductor device manufacturing apparatus and a manufacturing method that can adjust the holding surface of a bonding head to be parallel to the plane of a stage with high accuracy in a simple procedure.

[0011] Technical means of solving problems

[0012] The manufacturing device of the semiconductor device disclosed in the present specification includes: a stage for mounting a substrate; a bonding head for sucking and holding a chip by a holding surface facing the stage, and being movable relative to the stage in the surface direction and the normal direction of the stage; a profiling mechanism, which is a profiling mechanism arranged on the bonding head and has a fixed member and a movable member, the fixed member including one of a concave spherical surface and a convex spherical surface, and the movable member including the other of the concave spherical surface and the convex spherical surface and being arranged in a manner capable of swinging relative to the fixed member together with the holding surface; and a controller for performing a profiling process in which an end face of the chip held on the holding surface or the holding surface is caused to swing relative to the fixed member. The facing surface is adjusted to be parallel to the reference surface by imitating the substrate plane or the stage plane held by the stage, and the profiling mechanism can be switched to a free state in which the swing of the movable member can be realized, and a locked state in which the swing of the movable member is restricted. In the profiling process, the controller makes the facing surface abut against the reference surface while switching the profiling mechanism to the free state before the axial position of the bonding head reaches a specified reference position, and maintains the state so that the bonding head moves relatively in the surface direction of the reference surface, and switches the profiling mechanism to the locked state when the axial position reaches the reference position.

[0013] In the above case, the controller may move the bonding head in at least four directions parallel to the reference surface during the profiling process.

[0014] Furthermore, the controller may determine, as the reference position, the axial position when the axial position is closest to the stage during the process of moving the bonding head along a predetermined profiling route in the profiling process.

[0015] In addition, the reference position is predetermined based on the arrangement of the bonding head and the stage, or the result of the past profiling process.

[0016] The semiconductor device manufacturing method disclosed in the present specification manufactures the semiconductor device by bonding a chip sucked and held by a holding surface of a bonding head having a profiling mechanism to a substrate placed on a stage, and the semiconductor device manufacturing method is characterized in that it includes: a profiling step of adjusting the end face of the chip held on the holding surface or the facing surface of the holding surface to be parallel to a reference surface of the substrate plane held by the stage or the stage plane by making the facing surface follow the reference surface, and the profiling mechanism has a fixed member and a movable member, and can be switched to a free state that enables the swing of the movable member, and the The movable member is in a locked state in which the swinging of the movable member is restricted, the fixed member includes one of a concave spherical surface and a convex spherical surface, and the movable member includes the other of the concave spherical surface and the convex spherical surface and is arranged in a manner that can swing relative to the fixed member together with the retaining surface. In the profiling step, before the axial position of the bonding head reaches a specified reference position, the profiling mechanism is switched to the free state, so that the facing surface is abutted against the reference surface, and the state is maintained so that the bonding head is relatively moved in the surface direction of the reference surface. When the axial position reaches the reference position, the profiling mechanism is switched to the locked state.

[0017] [Effects of the Invention]

[0018] According to the technology disclosed in this specification, the holding surface of the bonding head can be adjusted to be parallel to the plane of the stage with high accuracy by a simple procedure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a diagram showing the structure of a semiconductor device manufacturing apparatus.

[0020] Figure 2 It is a figure which shows the structure of a profiling mechanism.

[0021] Figure 3 It is a diagram for explaining the principle of profiling processing.

[0022] Figure 4 This is a diagram showing an example of a profiling route.

[0023] Figure 5 This is a diagram showing another example of the profiling route.

[0024] Figure 6 : is a flowchart showing the flow of the profiling process.

[0025] Figure 7 This is a flowchart showing the flow of another example of the profiling process.

[0026] [Explanation of Symbols]

[0027] 10: Manufacturing device

[0028] 12: Stage

[0029] 14: Joint head

[0030] 20: Keep the face

[0031] 22: Profiling mechanism

[0032] 24: Heater

[0033] 26: Mobile mechanism

[0034] 28: Heater drive unit

[0035] 30: Vacuum source

[0036] 31: Air piping

[0037] 32: Profiling mechanism drive unit

[0038] 34: Controller

[0039] 40: Fixed components

[0040] 42: Movable components

[0041] 43: Supporter

[0042] 44: Spherical aerostatic bearing

[0043] 50: Opposite side

[0044] 60: Profiling route

[0045] 100: Substrate

[0046] 102: Semiconductor chips

[0047] 110: Reference plane DETAILED DESCRIPTION

[0048] Hereinafter, the structure of the semiconductor device manufacturing apparatus 10 will be described with reference to the drawings. Figure 1 is a diagram showing the structure of the manufacturing apparatus 10. Figure 1 As shown, the manufacturing apparatus 10 includes a stage 12 on which a substrate 100 is mounted, and a bonding head 14 for suction-holding a semiconductor chip 102 .

[0049] The stage 12 can hold the substrate 100 by suction, and a heater (not shown) is mounted inside the stage 12 for heating the substrate 100. The heating and suction of the stage 12 are controlled by a controller 34 described later. The stage 12 in this example is a fixed stage whose position in the vertical direction and the horizontal direction remains unchanged, but the stage 12 may be movable in at least one of the vertical direction and the horizontal direction depending on the situation.

[0050] The bonding head 14 is arranged to face the stage 12 and can move in the horizontal direction and the vertical direction relative to the stage 12. In order to realize the movement of the bonding head 14, a moving mechanism 26 is provided. The moving mechanism 26 has, for example, a driving source such as a motor or a hydraulic cylinder, and a direct-acting mechanism or a transmission mechanism such as a gear that transmits the movement of the driving source to the bonding head 14. The driving of the moving mechanism 26 is controlled by a controller 34.

[0051] The bonding head 14 can hold the semiconductor chip 102 by suction at the holding surface 20, which is the front end surface. Therefore, a suction hole (not shown) for holding the semiconductor chip 102 by suction is formed at the front end of the bonding head 14, and the suction hole is connected to the vacuum source 30 via an air pipe 31. In addition, a heater 24 for heating the held semiconductor chip 102 is built into the front end of the bonding head 14. The heater 24 is controlled by a heater driving unit 28.

[0052] After the bonding head 14 holds the semiconductor chip 102 by suction using the holding surface 20, the semiconductor chip 102 is placed on the surface of the substrate 100 and pressurized and heated, thereby bonding the semiconductor chip 102 to the substrate 100. Here, in recent years, semiconductor devices have been highly integrated due to the miniaturization of semiconductor processes. In order to achieve the high integration, it is necessary to maintain the parallelism of the substrate 100 and the semiconductor chip 102 bonded to the substrate 100 with high precision. As a means of such parallel adjustment, a manual angle adjustment device called a goniostage, or a method of finely adjusting the tilt by clamping a gasket, etc. have been proposed in the past. However, such existing parallel adjustment means require high skills and a lot of adjustment time.

[0053] Therefore, in order to enable parallel adjustment in a simple procedure, the bonding head 14 of this example is equipped with a profiling mechanism 22. The profiling mechanism 22 is a spherical air static pressure bearing 44 (see Figure 2 ) of the air pressure device. In the following, the upper side of the profiling mechanism 22 in the bonding head 14 is referred to as the "upper part 14u", and the lower side is referred to as the "lower part 14d".

[0054] Figure 2: is a diagram showing an example of the structure of the profiling mechanism 22. The profiling mechanism 22 has a fixed member 40, a movable member 42 movable relative to the fixed member 40, and a support 43. The fixed member 40 and the movable member 42 constitute a spherical air static pressure bearing 44. The upper end of the fixed member 40 is fixed to the upper portion 14u of the bonding head 14. The bottom surface of the fixed member 40 is a concave hemispherical surface. In addition, an air passage 46 for supplying or sucking air is formed in the fixed member 40. The air passage 46 passes through the side surface of the fixed member 40 to the bottom surface (i.e., the concave hemispherical surface). On the side surface of the fixed member 40, an air pipe 47 (refer to Figure 1 ).

[0055] The movable member 42 is held so as to be able to swing three-dimensionally relative to the fixed member 40. The lower end of the movable member 42 is fixed to the lower portion 14d of the bonding head 14, and the movable member 42 can swing together with the holding surface 20. In addition, the upper surface of the movable member 42 is a convex hemispherical surface corresponding to the concave hemispherical surface of the fixed member 40. The retainer 43 holds the movable member 42 in a manner not to hinder the swing of the movable member 42.

[0056] This type of profiling mechanism 22 separates the movable member 42 from the fixed member 40 and supports it in a non-contact state by ejecting compressed air from the concave hemispherical surface of the fixed member 40. As a result, the sliding resistance of the movable member 42 is greatly reduced, and it can precisely rotate with extremely light force. In addition, by stopping the supply of compressed air and vacuuming the movable member 42, the movable member 42 can be fixed in a predetermined posture. Hereinafter, the state in which compressed air is ejected and the swing of the movable member 42 is allowed is referred to as a "free state", and the state in which the movable member 42 is vacuumed and the swing of the movable member 42 is restricted is referred to as a "locked state".

[0057] The switching between the free state and the locked state of the profiling mechanism 22 is performed by the profiling mechanism driving unit 32. The profiling mechanism driving unit 32 has a compressor for supplying compressed air or a vacuum source for vacuum suction, etc. In addition, the driving of the profiling mechanism driving unit 32 is controlled by a controller 34.

[0058] The controller 34 controls the driving of each part of the manufacturing device 10. Specifically, the controller 34 performs a mounting process in which the moving mechanism 26, the heater driving unit 28, the vacuum source 30, etc. are driven to bond the semiconductor chip 102 to the substrate 100. In addition, the controller 34 of this example also performs a profiling process before the mounting process in which the end face of the semiconductor chip 102 held on the holding surface 20 or the holding surface 20 is made to follow the plane of the substrate 100 held by the stage 12 or the plane of the stage 12, so that the two are adjusted to be parallel. In addition, hereinafter, the end face of the semiconductor chip 102 held on the holding surface 20 or the holding surface 20 is referred to as the "opposing surface 50", and the plane of the substrate 100 held by the stage 12 or the plane of the stage 12 is referred to as the "reference surface 110".

[0059] This controller 34 is a computer having a processor for performing various operations and a memory for storing data and programs. The controller 34 of this example performs a profiling process for adjusting the holding surface 20 to be parallel to the plane of the stage 12 before performing the mounting process of the semiconductor chip 102. The profiling process will be described below.

[0060] Figure 3 is an image diagram showing the principle of profiling. Figure 3 In the embodiment, the holding surface 20 is set as the facing surface 50, and the plane of the stage 12 is set as the reference surface 110. Usually, there is an offset of the tilt of the axis or the surface in the device. Due to this offset, the facing surface 50 may be tilted relative to the reference surface 110. Figure 3 In the example shown in FIG. 1 , the axis A of the upper portion 14 u of the bonding head 14 is inclined relative to the ideal axis A*.

[0061] In order to correct this inclination, it has been proposed in recent years to use the profiling mechanism 22. Specifically, it has been proposed to make the holding surface 20 contact with the reference surface 110 after the profiling mechanism 22 is set to a free state, thereby performing parallel adjustment of the holding surface 20. In the free state, the movable member 42 can swing with a very small force. Therefore, in theory, if Figure 3 As shown on the left side of FIG, the movable member 42 swings until the entire facing surface 50 contacts the reference surface 110 and the facing surface 50 is parallel to the reference surface 110. Then, when the facing surface 50 becomes parallel, if the profiling mechanism 22 is switched to the locked state and the swing of the movable member 42 is restricted, the parallelism of the facing surface 50 with respect to the reference surface 110 can be maintained with high accuracy.

[0062] However, in reality, due to the influence of slight resistance or the dead weight of piping, etc. Figure 3As shown on the right side of FIG, merely making the facing surface 50 abut against the reference surface 110 cannot completely eliminate the inclination of the facing surface 50, and sometimes a parallel deviation remains. When the profiling mechanism 22 is locked in a state where a parallel deviation remains, the parallelism of the facing surface 50 with respect to the reference surface 110 cannot be maintained with high accuracy.

[0063] In this example, in order to more reliably reduce the residual parallel deviation, the facing surface 50 is brought into contact with the reference surface 110 while the profiling mechanism 22 is in a free state, and the bonding head 14 is relatively moved in the surface direction of the reference surface 110 while maintaining the state. The above movement easily induces the movable member 42 to swing, thereby making the facing surface 50 parallel to the reference surface 110.

[0064] That is, when the movable member 42 Figure 3 The residual parallel deviation is shown on the right side of the swing to become Figure 3 When the opposing surface 50 and the reference surface 110 are completely parallel as shown on the left side of FIG. Figure 3 By inducing the above-mentioned sliding, the bonding head 14 is moved in the horizontal direction, especially in the outer direction when viewed from the contact point P, so that the movable member 42 is easy to swing, and as a result, the facing surface 50 is easy to be parallel to the reference surface 110.

[0065] Here, if Figure 3 As is clear, when the surfaces 50 are completely parallel, the axial position Pz of the bonding head 14 is closer to the stage 12 than when there is a residual parallel deviation. Therefore, the axial position Pz of the bonding head 14 reflects the parallelism of the facing surfaces 50 .

[0066] Therefore, in this example, when the bonding head 14 is relatively moved in the surface direction of the reference surface 110 with the profiling mechanism 22 set to the free state, the axial position Pz of the bonding head 14 is observed, and when the axial position Pz reaches a predetermined reference position Pzdef, the profiling mechanism 22 is switched to the locked state. Here, the reference position Pzdef may be determined in the process of moving the bonding head 14 in the surface direction, or may be predetermined based on the configuration of the stage 12 and the bonding head 14. In either case, the axial position Pz at which it can be determined that the entire facing surface 50 is in contact with the reference surface 110 is set as the reference position.

[0067] In addition, the difference in the moving direction of the inclined bonding head 14 can be reduced according to the direction of the inclination of the facing surface 50. Figure 3In the right figure of , the facing surface 50 is tilted to the lower right. In the above case, compared with the case where the bonding head 14 is moved to the left, the possibility of reducing the residual deviation is high when the bonding head 14 is moved to the right. However, it is difficult to know the direction of the tilt of the facing surface 50 in advance. Therefore, when the bonding head 14 is moved in the surface direction, it is moved in at least four directions parallel to the reference surface 110. For example, the bonding head 14 is moved in the +X direction, the -X direction, the +Y direction, and the -Y direction. By moving the bonding head 14 in four directions in this way, no matter in which direction the facing surface 50 is tilted, the tilt can be eliminated more reliably.

[0068] Figure 4 60 is a diagram showing an example of a path (hereinafter referred to as a "profiling path 60") when the bonding head 14 is moved. Figure 4 In the example of FIG. 1 , the profiling path 60 is in a rectangular spiral shape extending from the center of the stage 12 toward the outside. The shape of the profiling path 60 may be appropriately changed, for example, Figure 5 Shown, also can be the cross shape of one stroke.No matter which kind of situation, this profiling route 60 is all to be stored in the storage unit of controller 34 in advance.

[0069] Next, the flow of the profiling process for adjusting the facing surface 50 to be parallel to the reference surface 110 will be described. Figure 6 1 is a flowchart showing the flow of the profiling process. When the profiling process is performed, the bonding head 14 may or may not hold certain chip components. When the chip components are held, the bottom surface of the chip components becomes the facing surface 50. In addition, when the chip components are not held, the holding surface 20 of the bonding head 14 becomes the facing surface 50. Similarly, the stage 12 may or may not hold the substrate 100. When the substrate 100 is held, the upper surface of the substrate 100 becomes the reference surface 110, and when the substrate 100 is not held, the upper surface of the stage 12 becomes the reference surface 110.

[0070] When performing the profiling process, the controller 34 first drives the profiling mechanism driving unit 32 to switch the profiling mechanism 22 to a free state (S10). Then, the controller 34 drives the moving mechanism 26 to lower the bonding head 14 until the facing surface 50 abuts against the reference surface 110 (S12). Whether the abutment is present can be determined, for example, by detecting the reaction force from the reference surface 110 or by the change in the axial position Pz of the bonding head 14.

[0071] If the facing surface 50 abuts against the reference surface 110, the controller 34 maintains the profiling mechanism 22 in a free state, and drives the moving mechanism 26 while maintaining the state, so that the bonding head 14 moves along the profiling route 60 (S14). During the movement, the axial position Pz of the bonding head 14 is detected by a position sensor provided in the moving mechanism 26. The controller 34 periodically detects the axial position Pz detected by the position sensor and stores it in the storage unit (S16).

[0072] If the movement along the prescribed profiling route 60 is completed (Yes in S18), the controller 34 determines the lowest point height Pzmin (i.e., the one closest to the stage 12) among the axial positions Pz stored in the storage unit, and sets the lowest point height Pzmin as the reference position Pzdef (S20). Then, the controller 34 determines whether the current axial position Pz of the bonding head 14 is the reference position Pzdef (S22). When the current axial position Pz is the reference position Pzdef (Yes in S22), the controller 34 determines that the residual parallel deviation is eliminated, and drives the profiling mechanism driving unit 32 to switch the profiling mechanism 22 to a locked state (S26). On the other hand, when the current axial position Pz does not appear at the reference position Pzdef (No in S22), the controller 34 drives the moving mechanism 26 to move the bonding head 14 in a direction parallel to the reference surface 110 (S24). The moving route at this time may be the same as or different from the profiling route 60. In either case, if the current axial position Pz reaches the reference position Pzdef as a result of the movement (Yes in S22 ), the contouring mechanism 22 is switched to the locked state ( S26 ).

[0073] As is clear from the above description, in this example, even after the facing surface 50 is brought into contact with the reference surface 110, the free state is maintained, and the bonding head 14 is moved in the surface direction while maintaining the state. As a result, the residual parallel deviation caused by friction or the dead weight of the pipe can be more reliably reduced, and the parallelism of the facing surface 50 with respect to the reference surface 110 can be highly maintained. In addition, in this example, the reference position Pzdef is set based on the axial position Pz obtained in the process of moving the bonding head 14 in the surface direction. As a result, even if the arrangement of the bonding head 14 and the stage 12 is changed from the design time due to aging, etc., an appropriate reference position Pzdef can be set.

[0074] Next, another example of the flow of the profiling process will be described. Figure 72 is a flowchart showing another example of the flow of the profiling process. In the profiling process, the controller 34 pre-sets the reference position Pzdef and stores it in the storage unit. The reference position Pzdef can be determined based on the configuration relationship between the stage 12 and the bonding head 14, that is, the design dimensional values ​​and positions of the two. In addition, as another form, the reference position Pzdef can also be determined based on the results of the past profiling process. For example, Figure 6 The lowest point height Pzmin obtained when the profiling process was performed in the past is set as the reference position Pzdef.

[0075] When performing profiling, Figure 6 Similarly, after switching the profiling mechanism 22 to the free state, the controller 34 lowers the bonding head 14 until the facing surface 50 abuts against the reference surface 110 (S30). Then, the controller 34 moves the bonding head 14 in the surface direction along the prescribed profiling route 60 (S34). At this time, the controller 34 periodically detects the axial position Pz of the bonding head 14 (S36), and compares the detected axial position Pz with the reference position Pzdef (S38).

[0076] If the comparison result shows that the axial position Pz exceeds the reference position Pzdef, the controller 34 returns to step S34 and continues the surface movement of the bonding head 14. On the other hand, if the axial position Pz is below the reference position Pzdef, the controller 34 determines that the residual parallel deviation is eliminated, and drives the profiling mechanism driving unit 32 to switch the profiling mechanism 22 to the locked state (S40).

[0077] As is clear from the above description, in this example, even after the facing surface 50 is brought into contact with the reference surface 110, the free state is maintained, and the bonding head 14 is moved in the surface direction while maintaining the state, so that the parallelism of the facing surface 50 with respect to the reference surface 110 can be highly maintained. In addition, in this example, the movement of the bonding head 14 in the surface direction is stopped at the time point when the axial position Pz reaches the preset reference position Pzdef. Figure 6 Compared with the processing of the previous embodiment, the profiling processing can be ended earlier.

[0078] Furthermore, the structures described above are all examples. If the bonding head 14 is moved in the plane direction while maintaining the free state and switched to the locked state when the axial position Pz reaches the predetermined reference position Pzdef, other structures can also be appropriately changed. For example, in the above example, the bonding head 14 is moved in four directions parallel to the reference surface 110, but it is not necessary to move the bonding head 14 in four directions.

[0079] For example, in the case where the direction of the inclination of the facing surface 50 can be predicted in advance, the bonding head 14 can also be moved only in the direction in which the predicted inclination can be eliminated. That is, the lower part 14d of the movable member 42 and the profiling mechanism 22 is connected with a pipe or an electrical wiring for supplying or sucking air. Due to the weight of such pipes and electrical wiring, the profiling mechanism 22 may be greatly tilted in one direction just after switching to the free state. Such a large tilt is likely to become the cause of residual parallel deviation. In the case of residual parallel deviation caused by the pipes and electrical wiring, the direction of the inclination of the facing surface 50 can be predicted according to the position of the pipes and electrical wiring. Therefore, the direction of the inclination of the facing surface 50 can also be predicted according to the position of the pipes and electrical wiring, and the bonding head 14 can be moved only in the direction in which the predicted inclination can be eliminated, that is, in the right direction in the case of the lower right. In addition, in the case of moving the bonding head 14 in four directions, the direction of the inclination of the facing surface 50 can also be predicted, and the bonding head 14 can be first moved in the direction in which the predicted inclination can be eliminated. By setting the above structure, the residual inclination can be greatly reduced in the initial operation, so if Figure 7 processing, the time required for processing can be shortened.

[0080] In the above description, the fixed member 40 of the profiling mechanism 22 has a concave spherical surface and the movable member 42 has a convex spherical surface, but these may be reversed, and the fixed member 40 may have a convex spherical surface and the movable member 42 may have a concave spherical surface. In the above description, the bonding head 14 is configured to move, but the stage 12 may be movable instead of the bonding head 14, or in addition to the bonding head 14, the stage 12 may also be movable. Figure 3 In the example of FIG. 2 , the holding surface 20 is set as the facing surface 50. However, in the profiling process, a chip component, such as a chip component dedicated for parallel adjustment, may be held on the holding surface 20, and the end surface of the chip may be processed as the facing surface 50. Figure 3 In the example, the upper surface of the stage 12 is set as the reference surface 110, but during the profiling process, the substrate 100, such as a substrate 100 dedicated to parallel adjustment, may be held on the stage 12 and the upper surface of the substrate 100 may be processed as the reference surface 110.

Claims

1. A semiconductor device manufacturing apparatus, characterized in that: include: A stage for mounting a substrate; a bonding head that sucks and holds the chip using a holding surface facing the stage and is relatively movable in a surface direction and a normal direction of the stage relative to the stage; a profiling mechanism provided in the bonding head and comprising a fixed member including one of a concave spherical surface and a convex spherical surface, and a movable member including the other of the concave spherical surface and the convex spherical surface and provided so as to be swingable relative to the fixed member together with the holding surface; and a controller for performing a profiling process in which an end face of the chip held on the holding surface or an opposing face of the holding surface is made to follow a reference plane which is a substrate plane held by the stage or a reference plane of the stage, thereby adjusting the opposing face to be parallel to the reference plane, and The contour mechanism can be switched between a free state in which the movable member can swing and a locked state in which the swing of the movable member is restricted. During the profiling process, before the axial position of the bonding head reaches a specified reference position, the controller switches the profiling mechanism to the free state, causes the opposing surfaces to abut against the reference surface, maintains the state and causes the bonding head to move relatively in the surface direction of the reference surface, and switches the profiling mechanism to the locked state when the axial position reaches the reference position.

2. The semiconductor device manufacturing apparatus according to claim 1, characterized in that The controller moves the bonding head in at least four directions parallel to a reference surface during the profiling process.

3. The semiconductor device manufacturing apparatus according to claim 1 or 2, characterized in that The controller determines, in the profiling process, the axial position when the axial position is closest to the stage in the process of moving the bonding head along a predetermined profiling route as the reference position.

4. The semiconductor device manufacturing apparatus according to claim 1 or 2, characterized in that The reference position is determined in advance based on the arrangement of the bonding head and the stage, or the result of a past profiling process.

5. A method for manufacturing a semiconductor device, which manufactures a semiconductor device by bonding a chip held by suction by a holding surface of a bonding head having a profiling mechanism to a substrate placed on a stage, the method comprising: a profiling step of adjusting the facing surface to be parallel to the reference surface by causing the end surface of the chip held on the holding surface or the facing surface of the holding surface to follow the reference surface of the substrate plane or the stage plane held by the stage, and The profiling mechanism includes a fixed member and a movable member, and can be switched between a free state in which the movable member can swing and a locked state in which the swing of the movable member is restricted, wherein the fixed member includes one of a concave spherical surface and a convex spherical surface, and the movable member includes the other of the concave spherical surface and the convex spherical surface and is arranged so as to be able to swing relative to the fixed member together with the holding surface. In the profiling step, before the axial position of the bonding head reaches a specified reference position, the profiling mechanism is switched to the free state, the opposing surfaces are brought into contact with the reference surface, and the state is maintained so that the bonding head is relatively moved in the surface direction of the reference surface. When the axial position reaches the reference position, the profiling mechanism is switched to the locked state.

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