Radiation device and method of operating the same, computer program product and object holder

Abstract

The invention relates to a method for operating a radiation device, in particular a particle radiation device and / or a laser radiation device. In addition, the invention also relates to a computer program product and a radiation device for executing the method. In addition, the invention also relates to an object holder for an object. For example, the object holder can be arranged in the particle radiation device. The method according to the invention comprises the following steps: generating a mark on the object holder using a laser beam of a laser beam device and / or using a particle beam of a particle radiation device, wherein the particle beam has charged particles; arranging the object on the object holder; moving the object holder; positioning the particle beam and / or the laser beam relative to the object using the mark; and processing, imaging and / or analyzing the object using the particle beam and / or the laser beam.

Description

Technical Field

[0001] The invention relates to a method for operating a radiation device, in particular a particle radiation device and / or a laser radiation device. The invention also relates to a computer program product and a radiation device for carrying out the method. The invention also relates to an object holder for an object. For example, the object holder can be arranged in a particle radiation device. Background Art

[0002] Electron radiation devices, in particular scanning electron microscopes (also referred to below as SEM) and / or transmission electron microscopes (also referred to below as TEM), are used to study objects (specimens) in order to gain insights into their properties and behavior under specific conditions.

[0003] In the case of SEM, an electron beam (hereinafter also referred to as a primary electron beam) is generated by means of a beam generator and is focused onto the object to be studied by a beam guidance system. The primary electron beam is guided in a scanning manner on the surface of the object to be studied by means of a deflection device. The electrons of the primary electron beam interact with the object to be studied. As a result of the interaction, electrons (so-called secondary electrons) are emitted from the object and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and backscattered electrons are detected and used to generate an image. Thus, an image of the object to be studied is obtained. In addition, as a result of the interaction, interaction radiation, such as X-ray radiation and cathode luminescence, is generated. The interaction radiation is particularly used for analyzing objects.

[0004] In the case of TEM, a primary electron beam is also generated by means of a beam generator and is focused onto the object to be studied by means of a beam guidance system. The primary electron beam transmits the object to be studied. When the primary electron beam passes through the object to be studied, the electrons of the primary electron beam interact with the material of the object to be studied. The electrons that penetrate the object to be studied are imaged on a light screen or on a detector (e.g., a camera) through a system consisting of an objective lens and a transmission lens (projection). Imaging can also be performed in the scanning mode of TEM. This type of TEM is generally referred to as STEM. It can also be proposed that backscattered electrons and / or secondary electrons emitted by the object to be studied are detected at the object to be studied by means of another detector in order to image the object to be studied.

[0005] Furthermore, it is known from the prior art to use combined devices for studying objects, wherein not only electrons but also ions can be directed to the object to be studied. For example, it is known to equip the SEM with an ion beam column. Ions are generated by means of an ion beam generator arranged in the ion beam column, which are used to prepare the object (for example, to grind the material of the object or to apply the material to the object) or also for imaging. The SEM is used in particular to observe the preparation process, but also for further studying the prepared or unprepared object.

[0006] In other known particle radiation devices, materials are applied to an object, for example, using gas transport. The known particle radiation device is a combined device that provides an electron beam and an ion beam. The particle radiation device includes an electron radiation column and an ion radiation column. The electron radiation column provides an electron beam focused on the object. The object is arranged in a sample chamber that is kept in a vacuum. The ion radiation column provides an ion beam that is also focused on the object. With the help of the ion beam, for example, a layer on the surface of the object is removed. After removing this layer, the other surface of the object is exposed. With the help of a gas input device, a gaseous precursor substance (so-called precursor) can be placed in the sample chamber. It is known that the gas input device is constructed with a needle-shaped device, which can be arranged very close to the position of a few μm from the object, so that the gaseous precursor substance can be guided to the position as accurately as possible and with a high concentration. Through the interaction of the ion beam and the gaseous precursor substance, a material layer is deposited on the surface of the object. For example, it is known that gaseous phenanthrene is introduced into the sample chamber as a gaseous precursor substance through a gas input device. Then, a carbon layer or a layer comprising carbon is substantially deposited on the surface of the object. It is also known to use a gaseous precursor substance with a metal to deposit a metal or a layer comprising a metal on the surface of the object. However, the deposit is not limited to carbon and / or metal. Rather, any substance may be deposited on the surface of the object, such as a semiconductor, a non-conductor or other compound. Furthermore, it is known that a gaseous precursor substance is used to abrade the material of the object when interacting with a particle beam.

[0007] Applying material to an object and / or removing material from an object is used, for example, to arrange markings on the object.In the prior art, for example, markings are used to position electron beams and / or ion beams.

[0008] In order to perform high-resolution analysis of the material structure of an object in a TEM or in a SEM with a transmission detector, it is known to prepare the object so that the thickness of the object is less than 100 nm, because in the transmission of electrons through the object, the electrons of the electron beam have a typical range of action of 1000 nm in solid materials. The electrons have an energy of typically from tens of keV to hundreds of keV when entering the object. The thickness of the object less than 100 nm ensures that the vast majority of the electrons pass through the object and can be detected by means of the detector.

[0009] It is known in the prior art to treat an object with an ion beam to achieve an object thickness of less than 100 nm, for example a thickness in the range of 1 nm to 80 nm or 1 nm to 50 nm. The treatment of the object with an ion beam can be observed by imaging the object with an electron beam.

[0010] A method known from the prior art for producing an object to be examined with a TEM or with an SEM using a transmission detector is described below. First, in a material block, for example, with an extension in the millimeter range, a sub-block of the material block is exposed using an ion beam and produced from the material block. The sub-block has, for example, a thickness of a few micrometers (especially 3 μm to 6 μm) and a length of, for example, several tens of μm (especially 30 μm to 80 μm). The sub-block is then fastened to a micromanipulator and removed from the material block. The sub-block is then fastened to a TEM object holder (also called a "TEM grid"). Using the ion beam directed to the sub-block, the material of the sub-block is now ground down until the sub-block or at least one region of the sub-block has a thickness of less than 100 nm. When grinding material from the sub-block, the TEM object holder is first rotated 1° to 2° about the rotation axis in a first direction from an initial position in order to ensure that the material is well ground down on the first side of the sub-block. Then, the TEM object holder is rotated from the initial position in the second direction around the rotation axis by 1° to 2° in order to ensure good grinding of the material on the second side of the sub-block. The first side and the second side of the sub-block are arranged opposite to each other and spaced apart. In order to enable the TEM object holder to rotate, the TEM object holder is arranged on a sample stage designed to be movable. The sample stage has a mechanical movement unit that realizes the rotation of the TEM object holder.

[0011] For prior art, see US 8,536,525 B2.

[0012] Due to mechanical inaccuracies of the motion unit of the sample stage, an undesired relative movement of the ion beam with respect to the position of the sub-block may occur when the TEM object holder is rotated about the rotation axis. In other words, after the rotation of the TEM object holder, the ion beam no longer hits the sub-block arranged on the TEM object holder at the position where the ion beam was focused before the rotation of the TEM object holder. In this case, in the prior art, the ion beam is recalibrated and positioned so that the ion beam hits the desired position of the sub-block in order to be able to abrade material. Summary of the invention

[0013] The object of the present invention is to provide a method for operating a radiation device, a computer program product, a radiation device and an object holder, with which, after a movement of the object holder, a particle beam or laser beam of the particle radiation device can be positioned relative to an object arranged on the object holder in a simple manner, in particular automatically.

[0014] According to the invention, this object is achieved by means of a method for operating a radiation device having the features described below. A computer program product having a program code is given below, which is loaded into a processor or can be loaded into a processor and controls the radiation device during execution so that the method according to the invention is carried out. In addition, the invention also relates to a radiation device having the features described below. In addition, the invention also relates to an object holder having the features described below. Further features of the invention are derived from the following description, the attached claims and / or the drawings.

[0015] The method according to the invention is used to operate a radiation device, in particular a particle radiation device for processing, imaging and / or analyzing an object and / or a laser radiation device for processing, imaging and / or analyzing an object. For example, the particle radiation device has at least one beam generator for generating a particle beam with charged particles. The charged particles are, for example, electrons or ions.

[0016] In the method according to the invention, at least one mark is arranged on the object holder. In other words, a mark is generated on the object holder. The arrangement of the mark is carried out using a laser beam of a laser beam device and / or using at least one particle beam of a particle radiation device, wherein the particle beam has charged particles. For example, it is proposed that the laser beam device is arranged on the particle radiation device. In addition to this or in lieu thereof, it is proposed that the laser beam device is a device separate from the particle radiation device. For example, it is proposed that by means of the laser beam device, material is ground and / or applied from the object holder so that a mark is generated by material grinding. In addition to this or in lieu thereof, it is proposed that by means of the particle beam, material is ground from the object holder and / or material is applied to the object holder so that a mark is generated by material grinding and / or material application. For material application and / or material grinding, for example, a gas is supplied to the object holder. The gas interacts with the particle beam and / or the laser beam so that material is applied to the object holder or material is ground from the object holder.

[0017] The method according to the present invention also includes arranging at least one object on an object holder. For example, in order to arrange the object on the object holder, a material is applied at the connection position between the object and the object holder, so that the object is connected to the object holder. To this end, in an embodiment of the method according to the present invention, a gas and a particle beam are supplied to the object so that the material is applied at the connection position due to the interaction between the particle beam and the gas. Additionally or alternatively, in another embodiment of the method according to the present invention, a gas and a laser beam are supplied to the object so that the material is applied at the connection position based on the interaction between the laser beam and the gas. However, the present invention is not limited to the aforementioned embodiment of arranging the object on the object holder. Instead, any method of arranging the object on the object holder suitable for the present invention can be used.

[0018] In addition, in the method according to the present invention, the movement of the object holder and therefore the movement of the object arranged on the object holder are realized. The movement of the object holder includes, for example, the translational movement of the object holder along at least one axis. For example, the object holder moves along the first axis, along the second axis and / or along the third axis, wherein the first axis, the second axis and the third axis are, for example, oriented perpendicularly to each other. In addition to this or in lieu of this, it is proposed that the object holder rotates around at least one axis of rotation. The above rotation particularly includes the tilting of the object holder around the axis of rotation. In particular, it is proposed that the object holder and the object thus arranged on the object holder rotate 0.5° to 5°, particularly 1° to 3° or 1° to 2° around the axis of rotation in the first direction and / or the second direction from the initial position. The aforementioned range limit of the angular range is included in the angular range. It is explicitly pointed out that the present invention is not limited to the aforementioned angular range. Instead, any angular range suitable for the present invention can be used. In the embodiment of the method according to the present invention, it is additionally or alternatively proposed that the object holder rotates around the first axis of rotation and / or around the second axis of rotation. For example, the first rotation axis and the second rotation axis are oriented perpendicular to each other.

[0019] The method according to the invention also comprises the relative positioning of the particle beam and / or the laser beam relative to the object using a marking. In other words, after the movement of the object holder, the particle beam and / or the laser beam is recalibrated and positioned relative to the object in such a way that the particle beam can be guided to a desired position on the object. The relative positioning of the particle beam and / or the laser beam relative to the object is performed, for example, by (a) recalibrating (i.e. positioning) the particle beam (e.g. by means of a deflection unit of a particle irradiation device) and / or by (b) recalibrating (i.e. positioning) the laser beam (e.g. by means of a guiding unit of the laser beam) and / or by (c) recalibrating (i.e. positioning) the object holder by the movement of the object holder. In addition, the method according to the invention then comprises processing, imaging and / or analyzing the object using the positioned particle beam and / or the positioned laser beam.

[0020] The method according to the invention is not limited to the above-described sequence of method steps described. Rather, in the method according to the invention, any sequence of the above-described method steps that is suitable for the invention can be selected.

[0021] The invention has the advantage that, in particular after a movement of the object holder, but also after any other relative movement of the object holder relative to the particle beam and / or laser beam, a relative positioning of a particle beam and / or a laser beam device of a particle irradiation system relative to an object arranged on the object holder can be easily achieved. In particular, the relative positioning of the particle beam and / or laser beam relative to the object can be performed automatically.

[0022] In an embodiment of the method according to the present invention, the object holder is designed as an object holder suitable for transporting an inspection particle beam to an object, wherein the inspection particle beam has particles that transmit through the object. For example, the object holder is designed as a TEM object holder, which can be inserted into a TEM and / or into a SEM with a transmission detector and / or into a combined device with an ion radiation column, an electron radiation column and a transmission detector. It should be clearly pointed out that the particle radiation device used to perform the method according to the present invention does not necessarily have to be a particle radiation device that provides an inspection particle beam. Instead, the object holder can be separated from the particle radiation device used to perform the method according to the present invention and introduced into another particle radiation device, and then the inspection particle beam is used in the particle radiation device to inspect the object. For example, the other particle radiation device is a TEM.

[0023] In another embodiment of the method according to the invention, the object is generated by means of a particle beam of a particle radiation device and / or a laser beam of a laser beam device before the object is arranged on the object holder. For example, in an embodiment of the method according to the invention, an object in the form of a sub-block of a material block is exposed in the material block and produced from the material block by a particle beam (e.g., an ion beam). The material block has, for example, an extension in the millimeter range. And the object produced in the form of a sub-block has, for example, a thickness of several micrometers (especially 3μm to 6μm) and a length of, for example, tens of μm (especially 30μm to 80μm). Subsequently, the object is fastened in the form of a sub-block, for example, on a micromanipulator and taken out of the material block. Then, the object in the form of a sub-block is arranged on the object holder. In addition to this or in lieu thereof, it is proposed that the object is directly arranged on the object holder without performing an intermediate step, that is, when the object is arranged on the micromanipulator.

[0024] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that the object is arranged on the object holder so that the surface of the object is arranged at an angle of 0° to 360° with the surface of the object holder that is freely accessible to the particle beam and / or laser beam. Here, the mark is arranged on the aforementioned surface of the object holder. In an embodiment of the method according to the invention, the surface of the object is arranged parallel to the surface of the object holder that is freely accessible to the particle beam and / or laser beam. Instead of this, it is proposed that the surface of the object is arranged at an angle of 5° to 80° with the surface of the object holder that is freely accessible to the particle beam and / or laser beam. For example, it is proposed that the surface of the object and the surface of the object holder are arranged in different planes. Instead of this, it is proposed that the surface of the object and the surface of the object holder are arranged in a single plane. In other words, the surface of the object and the surface of the object holder are at the same height. This embodiment of the method ensures a particularly good relative positioning of the particle beam and / or laser beam relative to the object because the mark and the object are arranged in a single plane.

[0025] In yet another embodiment of the method according to the present invention, it is additionally or alternatively proposed that before the mark is arranged on the face of the object holder, the face of the object holder is generated using a particle beam and / or a laser beam. If the object holder does not have a face or only has a few suitable faces for arranging the mark, it is proposed in this embodiment of the method according to the present invention, for example, that the face of the object holder is first generated on the object holder. Then, the face of the object holder is generated on the object holder using a particle beam, and the particle beam is, for example, an ion beam and / or a laser beam. This is achieved in particular by grinding the material of the object holder when using a particle beam and / or a laser beam. For grinding, in particular, a gas can be conveyed to the object holder. By the interaction of the ion beam and / or the laser beam with the gas and with the object holder, material grinding is generated on the object holder. In addition to this or alternatively proposed here, for example, by applying material to the object holder when using a particle beam and / or a laser beam and when conveying gas to generate the face of the object holder. The application of material to the object holder is brought about, for example, by the interaction of an ion beam and / or a laser beam with a gas.

[0026] In an embodiment of the method according to the invention, it is additionally or alternatively proposed that a reference image with a mark is generated by imaging the mark using a particle beam. Here, the reference image with a mark is understood as a reference image of the image with a mark above and below. In addition, another image with a mark is generated. Here, the image with a mark is understood as an image with a mark above and below. In other words, another image with a mark is generated by re-imaging the mark using a particle beam. When generating the reference image with a mark and the other image with a mark, for example, an ion beam and / or an electron beam is used as a particle beam. The reference image with a mark is then compared with the other image with a mark. Then, a displacement vector is determined by comparing the reference image with the mark with the other image with a mark. The determined displacement vector is then used to perform relative positioning of the particle beam and / or laser beam. For example, a mathematical method of cross-correlation is applied when determining the displacement vector, which is already known from the prior art.

[0027] In a further embodiment of the method according to the invention, it is additionally or alternatively proposed that the particle beam has a predeterminable beam flow, wherein not only a further image with the marking is generated, but also the processing, imaging and / or analysis of the object is carried out using the particle beam with the predeterminable beam flow. Alternatively, it is proposed that the particle beam has a predeterminable beam flow, wherein (i) a reference image with the marking is generated, (ii) a further image with the marking is generated, and (iii) the processing, imaging and / or analysis of the object is carried out using the particle beam with the predeterminable beam flow. Therefore, in the above-mentioned embodiment of the method according to the invention, it is proposed that the particle beam always operates with the same beam flow (i.e. the predeterminable beam flow), and more precisely, when generating a reference image with the marking, when generating a further image with the marking, when processing the object, when imaging the object and / or when analyzing the object.

[0028] In another embodiment of the method according to the present invention, it is additionally or alternatively proposed that the particle beam has a first beam flow that can be predetermined or a second beam flow that can be predetermined. The first beam flow is different from the second beam flow. Using the first beam flow that can be predetermined, another image with a mark is generated under the condition of using the particle beam. On the contrary, the processing, imaging and / or analysis of the object is carried out under the condition of using the particle beam with a second beam flow that can be predetermined. Instead of this, it is proposed that the particle beam has a first beam flow that can be predetermined or a second beam flow that can be predetermined. Here, the first beam flow is also different from the second beam flow. Under the condition of using the particle beam with the first beam flow that can be predetermined, the generation of a reference image with a mark and / or the generation of another image with a mark are carried out. In addition, the processing, imaging and / or analysis of the object are carried out / performed under the condition of using the particle beam with the second beam flow that can be predetermined. Therefore, it is proposed in the above-mentioned embodiment to operate a particle beam with different beam flows.

[0029] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that the processing of the object includes the grinding of the material of the object. For example, the material of the object is ground using an ion beam and / or a laser beam. For this purpose, at least one gas is especially supplied to the object, wherein the gas acts together with the particle beam and / or the laser beam and the object so that the material is ground from the object. In addition to this or alternatively to this, it is proposed that the processing of the object includes arranging the material on the object. For example, this is carried out when at least one gas is supplied to the object, wherein the gas acts together with the particle beam and / or the laser beam so that the material is arranged on the object. For example, an ion beam is used as a particle beam. For example, a gaseous precursor substance (so-called precursor) is placed in the sample chamber by means of a gas input device. The gas input device has, in particular, a needle-shaped device, which can be arranged very close to the position of the object by a few μm, so that the gaseous precursor substance can be guided to the position as accurately as possible and with a high concentration. Through the interaction of the ion beam with the gaseous precursor substance, a material layer is deposited on the surface of the object. For example, gaseous phenanthrene is introduced into the sample chamber as a gaseous precursor substance through a gas input device. Then, a carbon layer or a layer containing carbon is basically deposited on the surface of the object. In addition, a gaseous precursor substance with a metal can also be used to deposit a metal or a layer containing a metal on the surface of the object. However, the deposit is not limited to carbon and / or metal. Instead, any substance, such as a semiconductor, a non-conductor or other compound, can be deposited on the surface of the object.

[0030] Again, in addition or as an alternative thereto, it is proposed that the analysis object comprises at least one of the following analysis types:

[0031] - analysis by means of EDX (where EDX is the abbreviation for Energy Dispersive X-ray Spectroscopy),

[0032] - analysis by means of WDX (WDX is the abbreviation for wavelength dispersive X-ray spectroscopy),

[0033] - analysis by means of EBSD (EBSD being the abbreviation for Electron Backscatter Diffraction),

[0034] - analysis by means of TKD examination (wherein TKD is the abbreviation for Transmission Kikuchi Diffraction),

[0035] - analysis by means of electron beam imaging, and

[0036] The analysis is carried out using a transmission detector, for example a STEM detector in a SEM or in a combined device with an electron radiation column and an ion radiation column.

[0037] In an embodiment of the method according to the invention, it is additionally or alternatively proposed that the charged particles are ions. For example, the ions are gallium ions. However, the invention is not limited to the aforementioned ions. Rather, any type of ions suitable for the invention can be used for the invention. It is alternatively proposed that the charged particles are electrons.

[0038] In an embodiment of the method according to the invention, it is additionally or alternatively provided that the method has one of the following features:

[0039] (i) the particle beam is a first particle beam. The object is imaged by means of a second particle beam;

[0040] (ii) the particle beam is a first particle beam, wherein the charged particles of the first particle beam include ions. The object is imaged using a second particle beam, wherein the second particle beam includes electrons.

[0041] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that a reference image with a mark is generated by imaging the mark using a second particle beam. The reference image with a mark is referred to below as an additional reference image with a mark. In addition, another image with a mark is generated by re-imaging the mark using a second particle beam. The additional image with a mark will be referred to below as another additional image with a mark. The additional reference image with a mark is then compared with another additional image with a mark, and a displacement vector is determined using the comparison of the additional reference image with a mark with another additional image with a mark. The displacement vector is referred to below as an additional displacement vector. Relative positioning of the particle beam and / or laser beam is performed using an additional displacement vector. For example, a mathematical method of cross-correlation is applied when determining the additional displacement vector, which is already known from the prior art.

[0042] In yet another further embodiment of the method according to the invention, it is additionally or alternatively proposed that the method has at least one of the following features:

[0043] (i) the mark is produced as a mark having at least one edge, from which a first plane extends in a first dimension and a second plane extends in a second dimension;

[0044] (ii) the marking is produced as a marking having at least one first edge and at least one second edge. The first edge and the second edge can be oriented in different directions. A first plane extends from the first edge and the second edge in a first dimension, and a second plane extends from the first edge and the second edge in a second dimension. In this case, for example, the first planes are different from one another. In particular, it is also provided that the second planes are different from one another;

[0045] (iii) the marks are generated as cross marks and / or polygons;

[0046] (iv) the mark is generated as a star mark;

[0047] (v) the mark is produced as an X-shaped mark;

[0048] (vi) the mark is produced as an L-shaped mark;

[0049] (vii) Producing markings by abrading material and / or by applying material.

[0050] The present invention also relates to a computer program product having a program code, which can be loaded into or is loaded into a processor of a radiation device, in particular a particle radiation device and / or a laser radiation device, wherein the program code, when executed in the processor, controls the radiation device in such a way that a method having at least one of the above or following features or a method having a combination of at least two of the above or following features is implemented.

[0051] The present invention also relates to a radiation device for processing, imaging and / or analyzing an object. The radiation device according to the present invention has at least one beam generator for generating a particle beam and / or a laser beam with charged particles. The charged particles are, for example, electrons or ions. In addition, the radiation device has an object holder for arranging the object. In addition, the radiation device has a scanning device for scanning the particle beam and / or the laser beam on the object. The radiation device also has at least one detector for detecting interaction particles and / or interaction radiation, which is generated by the interaction of the particle beam and / or the laser beam with the object when the particle beam and / or the laser beam hits the object. In addition, the radiation device according to the present invention is provided with at least one display device for displaying images and / or analyzing objects. The radiation device according to the present invention is also provided with at least one control unit with a processor, in which a computer program product is loaded, and the computer program product has at least one of the above or following features or a combination of at least two of the above or following features.

[0052] In embodiments of the radiation device according to the invention, it is additionally or alternatively provided that the radiation device is designed as a particle radiation device. Furthermore, the radiation device has at least one objective for focusing the particle beam onto the object.

[0053] In another embodiment of the particle radiation device according to the present invention, it is additionally or alternatively proposed that the beam generator is designed as a first beam generator and the particle beam is designed as a first particle beam with first charged particles. In addition, the objective lens is designed as a first objective lens, which is used to focus the first particle beam on the object. In addition, the radiation device according to the present invention has at least one second beam generator for generating a second particle beam with second charged particles. In addition, the radiation device according to the present invention has at least one second objective lens, which is used to focus the second particle beam on the object.

[0054] In particular, it is proposed that the radiation device is designed as an electron radiation device and / or an ion radiation device.

[0055] The present invention also relates to an object holder for being arranged in a particle radiation device. For example, this particle radiation device is an electron radiation device and / or an ion radiation device. The object holder according to the present invention has at least one holding device for holding an object. In addition, the object holder according to the present invention has at least one mark for positioning the particle beam of the particle radiation device. For example, the mark can be generated on the object holder when using a laser beam device and / or a particle beam of the particle radiation device. The object holder is designed to transport charged particles that pass through the object. These charged particles are, for example, electrons or ions. For example, the object holder according to the present invention can be used when performing the above-mentioned or below-mentioned method according to the present invention.

[0056] In an embodiment of the object holder according to the present invention, it is additionally or alternatively proposed that the object holder has a surface constructed in this way, that is, the surface is freely accessible to the particle beam of the particle radiation device and / or to the laser beam of the laser radiation device. In addition, the mark is arranged on the surface of the object holder. In addition, the object holder is designed so that the surface of the object can be arranged at an angle of 0° to 360° relative to the surface of the object holder. In particular, it is proposed that the surface of the object can be arranged parallel to the surface of the object holder. For example, it is proposed that the surface of the object and the surface of the object holder can be arranged in different planes. Instead of this, it is proposed that the surface of the object and the surface of the object holder can be arranged in a single plane. In other words, the surface of the object and the surface of the object holder are at the same height. According to this embodiment of the object holder of the present invention, particularly good relative positioning of the particle beam and / or laser beam relative to the object is guaranteed because the mark and the object are arranged in a single plane.

[0057] In a further embodiment of the object holder according to the invention, it is additionally or alternatively proposed that the marking is arranged on the holding device. For example, the aforementioned holding device is the first holding device among a large number of further holding devices arranged on the object holder. In particular, the further holding device has a second holding device. In a further embodiment of the object holder according to the invention, the marking is arranged on the second holding device. Conversely, the object can be arranged on the first holding device. The second holding device is arranged on the object holder separately from the first holding device. Therefore, the first holding device and the second holding device are not identical.

[0058] In yet another further embodiment of the object holder according to the invention, it is additionally or alternatively provided that the object holder has at least one of the following features:

[0059] (i) the mark is formed as a mark having at least one edge, from which a first plane extends in a first dimension and a second plane extends in a second dimension;

[0060] (ii) The marking is formed as a marking having at least one first edge and at least one second edge. The first edge and the second edge can be oriented in different directions. A first plane extends from the first edge and the second edge in a first dimension, and a second plane extends from the first edge and the second edge in a second dimension. In this case, for example, the first planes are different from one another. In particular, it is also provided that the second planes are different from one another;

[0061] (iii) the mark is formed as a cross mark and / or a polygon;

[0062] (iv) the mark is formed as a star-shaped mark;

[0063] (v) the mark is formed as an X-shaped mark;

[0064] (vi) the mark is formed as an L-shaped mark;

[0065] (vii) Markings are those produced by abrading material and / or by applying material.

[0066] Due to their design, the above-described marking is particularly suitable for the automatic identification of a particle beam and / or laser beam and for the automatic relative positioning of the particle beam and / or laser beam relative to the object. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] Other suitable or practical embodiments and advantages of the present invention are described below in conjunction with the accompanying drawings. In the accompanying drawings:

[0068] Figure 1 A first embodiment of a particle radiation device is shown;

[0069] Figure 2 A second embodiment of a particle radiation device is shown;

[0070] Figure 3 A third embodiment of a particle radiation device is shown;

[0071] Figure 4 A schematic diagram showing a sample stage of a particle radiation device;

[0072] Figure 5 Shown according to Figure 4 Another schematic diagram of a sample stage;

[0073] Figure 6 A schematic diagram of a particle irradiation device having a laser beam device is shown;

[0074] Figure 7 A schematic diagram of a system having a particle irradiation device and a laser beam arrangement is shown;

[0075] Figure 8 A schematic diagram showing a flow chart of an embodiment of a method for operating a particle radiation device;

[0076] Fig. 9 a schematic diagram showing a side view of an object holder;

[0077] Fig.10 Shown according to Fig. 9 A schematic diagram of a top view of an object holder;

[0078] Fig.11 A schematic diagram showing a flow chart of a further embodiment of a method for operating a particle radiation device;

[0079] Fig.12 a schematic diagram showing a side view of an additional object holder;

[0080] Fig.13 shows the basis after the surface is generated on the object holder Fig.12 A schematic diagram of a side view of a holding device of an object holder;

[0081] Fig.14 shows the basis after the surface is generated on the object holder Fig.12 A further schematic diagram of a side view of a holding device of an object holder; and

[0082] Fig.15 A schematic diagram showing a top view of a holding device of an object holder. DETAILED DESCRIPTION

[0083] The invention is now explained in detail with the aid of a particle irradiation device in the form of an SEM and in the form of a combined device with an electron irradiation column and an ion irradiation column. It is explicitly pointed out that the invention can be used in any particle irradiation device, in particular in any electron irradiation device and / or any ion irradiation device.

[0084] Figure 1 A schematic diagram of a SEM 100 is shown. The SEM 100 has a first beam generator in the form of an electron source 101, which is designed as a cathode. In addition, the SEM 100 is provided with an extraction electrode 102 and an anode 103, which is plugged into one end of a beam guide tube 104 of the SEM 100. For example, the electron source 101 is designed as a thermal field emitter. However, the present invention is not limited to such an electron source 101. Instead, any electron source can be used.

[0085] The electrons coming out of the electron source 101 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between the electron source 101 and the anode 103. In the embodiment shown here, the anode potential is 100V to 35kV, for example 5kV to 15kV, especially 8kV relative to the ground potential of the housing of the sample chamber 120. However, alternatively, the anode potential can also be at ground potential.

[0086] Two converging lenses, namely a first converging lens 105 and a second converging lens 106, are arranged at the beam guide tube 104. Here, starting from the electron source 101 and viewed in the direction of the first objective lens 107, the first converging lens 105 is arranged first and then the second converging lens 106. It should be explicitly pointed out that other embodiments of the SEM 100 can have only a single converging lens. A first baffle unit 108 is arranged between the anode 103 and the first converging lens 105. The first baffle unit 108, together with the anode 103 and the beam guide tube 104, is at a high voltage potential, namely the potential of the anode 103 or ground. The first baffle unit 108 has a plurality of first baffle openings 108A, which are arranged at the anode 103 and the beam guide tube 104. Figure 1 108A. For example, there are two first baffle openings 108A. Each of the multiple first baffle openings 108A has a different opening diameter. With the help of an adjustment mechanism (not shown), the desired first baffle opening 108A can be set to the optical axis OA of the SEM 100. It should be clearly pointed out that in other embodiments, the first baffle unit 108 may be provided with only a single baffle opening 108A. In this embodiment, an adjustment mechanism may not be provided. The first baffle unit 108 is now designed to be fixed in position. A second baffle unit 109 is arranged between the first converging lens 105 and the second converging lens 106. Instead of this, it is proposed that the second baffle unit 109 is movably formed.

[0087] The first objective 107 has a pole shoe 110 in which a hole is formed. The beam guiding tube 104 is guided through this hole. A coil 111 is arranged in the pole shoe 110 .

[0088] An electrostatic deceleration device is arranged in the lower region of the beam guide tube 104. This deceleration device has a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged at the end of the beam guide tube 104 facing the object 125, which is arranged on a movably designed object holder 114.

[0089] The tubular electrode 113 together with the beam guiding tube 104 is at the potential of the anode 103, while the individual electrodes 112 and the object 125 are at a lower potential relative to the potential of the anode 103. In the present case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be braked to the desired energy required for examining the object 125.

[0090] The SEM 100 also has a scanning device 115, by which the primary electron beam can be deflected and scanned over the object 125. In this case, the electrons of the primary electron beam interact with the object 125. As a result of the interaction, detected interaction particles and / or interaction radiation occur. As interaction particles, in particular, electrons are emitted from the surface of the object 125 or from areas near the surface - so-called secondary electrons - or electrons of the primary electron beam are backscattered - so-called backscattered electrons.

[0091] The object 125 and the individual electrodes 112 may also be at different potentials and different from ground. The position of the deceleration of the primary electron beam relative to the object 125 can thereby be set. If the deceleration is performed, for example, relatively close to the object 125, the imaging errors are smaller.

[0092] In order to detect secondary electrons and / or backscattered electrons, a detector assembly is arranged in the beam guide tube 104, which detector assembly has a first detector 116 and a second detector 117. The first detector 116 is arranged on the source side along the optical axis OA, while the second detector 117 is arranged on the object side along the optical axis OA in the beam guide tube 104. The first detector 116 and the second detector 117 are arranged offset from each other in the direction of the optical axis OA of the SEM 100. The first detector 116 and the second detector 117 each have a through opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guide tube 104. The optical axis OA of the SEM 100 extends through the corresponding through openings.

[0093] The second detector 117 is mainly used to detect secondary electrons. The secondary electrons first have a small kinetic energy and an arbitrary direction of movement when leaving the object 125. The secondary electrons are accelerated in the direction of the first objective lens 107 by the strong suction field emitted from the tubular electrode 113. The secondary electrons enter the first objective lens 107 approximately in parallel. The beam diameter of the beam of secondary electrons is also kept small in the first objective lens 107. The first objective lens 107 now strongly acts on the secondary electrons and produces a relatively short secondary electron focus with a sufficiently steep angle relative to the optical axis OA, so that the secondary electrons are further dispersed from each other after focusing and hit the second detector on the effective area of ​​the second detector 117. On the contrary, only a small part of the electrons scattered back at the object 125 (i.e., the scattered back electrons with relatively high kinetic energy relative to the secondary electrons when leaving the object 125) are recorded by the second detector 117. The high kinetic energy of the backscattered electrons upon exiting from the object 125 and the angle relative to the optical axis OA result in the beam waist of the backscattered electrons, i.e. the beam region with the smallest diameter, being located near the second detector 117. Most of the backscattered electrons pass through the through opening of the second detector 117. The first detector 116 is therefore used essentially for recording the backscattered electrons.

[0094] In a further embodiment of the SEM 100, the first detector 116 may be designed to additionally have a reverse field grid 116A. The reverse field grid 116A is arranged on the side of the first detector 116 pointing toward the object 125. The reverse field grid 116A has a negative potential relative to the potential of the beam guide tube 104, so that only backscattered electrons with high energy pass through the reverse field grid 116A to reach the first detector 116. Additionally or alternatively, the second detector 117 has an additional reverse field grid that is designed similarly to the aforementioned reverse field grid 116A of the first detector 116 and has a similar function.

[0095] Furthermore, the SEM 100 has a sample chamber detector 119 in the sample chamber 120 , for example an Everhart-Thornley detector or an ion detector having a light-shielding detection surface coated with metal.

[0096] The detection signals generated by the first detector 116 , the second detector 117 , and the sample chamber detector 119 are used to generate an image or multiple images of the surface of the object 125 .

[0097] It is to be explicitly pointed out that the baffle openings of the first baffle unit 108 and the second baffle unit 109 and the through-openings of the first detector 116 and the second detector 117 are shown exaggeratedly. The through-openings of the first detector 116 and the second detector 117 have a size perpendicular to the optical axis OA in the range of 0.5 mm to 5 mm. For example, they are designed to be circular and have a diameter perpendicular to the optical axis OA in the range of 1 mm to 3 mm.

[0098] In the embodiment shown, the second baffle unit 109 is constructed as an orifice plate and is provided with a second baffle opening 118 for allowing the primary electron beam to pass through, and the second baffle opening has a size in the range of 5 μm to 500 μm, for example 35 μm. Alternatively, in another embodiment, it is proposed that the second baffle unit 109 is provided with a plurality of baffle openings, which can be mechanically deflected toward the primary electron beam or the primary electron beam can reach these baffle openings when using electric and / or magnetic deflection elements. The second baffle unit 109 is designed as a pressure grading plate. This pressure grading plate will be arranged with the electron source 101 and ultra-high vacuum prevails (10 -7 hPa to 10 -12 hPa) and the first region with high vacuum (10 - 3 hPa to 10 -7 The second region is an intermediate pressure region of the beam guiding tube 104 leading to the sample chamber 120 .

[0099] The sample chamber 120 is under vacuum. In order to generate the vacuum, a pump (not shown) is arranged at the sample chamber 120. Figure 1 In the embodiment shown in FIG. 1 , the sample chamber 120 operates within a first pressure range or a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, while the second pressure range only includes pressures greater than 10 -3 In order to ensure these pressure ranges, the sample chamber 120 is sealed in terms of vacuum technology.

[0100] The object holder 114 is arranged on the sample stage 122. The sample stage 122 has a motion unit, and the object holder 114 is designed to be able to move in three directions arranged perpendicularly to each other, namely, in the x direction (first stage axis), the y direction (second stage axis) and the z direction (third stage axis). In addition, the sample stage 122 has a motion unit so that the object holder 114 can rotate around two rotation axes (stage rotation axes) arranged perpendicularly to each other. The present invention is not limited to the above-mentioned sample stage 122. Instead, the sample stage 122 may have additional translation axes and rotation axes, along which the object holder 114 can move or around which the translation axis and the rotation axis can move.

[0101] The SEM 100 also has a third detector 121, which is arranged in the sample chamber 120. More precisely, the third detector 121 is arranged behind the sample stage 122 along the optical axis OA when viewed from the electron source 101. The sample stage 122 and thus the object holder 114 can be rotated in such a way that an object 125 arranged on the object holder 114 can be penetrated by the primary electron beam. When the primary electron beam passes through the object 125 to be investigated, the electrons of the primary electron beam interact with the material of the object 125 to be investigated. The electrons that pass through the object 125 to be investigated are detected by the third detector 121.

[0102] A radiation detector 500 is arranged at the sample chamber 120, by which interaction radiation, such as X-ray radiation and / or cathode luminescence, is detected. The radiation detector 500, the first detector 116, the second detector 117 and the sample chamber detector 119 are connected to a control unit 123, which has a monitor 124. The third detector 121 is also connected to the control unit 123. For the sake of simplicity, it is not shown in the figure. The control unit 123 processes the detection signals generated by the first detector 116, the second detector 117, the sample chamber detector 119, the third detector 121 and / or the radiation detector 500, and displays these detection signals on the monitor 124 in the form of an image or spectrum.

[0103] The control unit 123 also has a database 126 in which data are stored and from which data are read. In addition, the control unit 123 has a processor 127 into which a computer program product with a program code is loaded, which program code controls the SEM 100 when executed so that the method according to the invention is performed. This will be explained in detail below.

[0104] The SEM 100 has a gas input device 1000 for delivering a gaseous precursor to a specific position on the surface of the object 125 and / or the object holder 114. The gas input device 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is contained in the precursor reservoir 1001, for example, as a solid, gaseous or liquid substance. By heating and / or cooling the precursor, the balance between the solid phase, the liquid phase and the gas phase is adapted so that the required vapor pressure is available. For example, phenanthrene is used as a precursor. Then, a carbon layer or a layer containing carbon is basically deposited on the surface of the object 125 and / or the object holder 114. Alternatively, for example, a precursor with a metal can be used to deposit a metal or a layer containing a metal on the surface of the object 125 and / or the object holder 114. However, the deposit is not limited to carbon and / or metal. Instead, any substance, such as a semiconductor, a non-conductor or other compound, can be deposited on the surface of the object 125 and / or the object holder 114. Furthermore, it is also proposed to use the precursor to remove material of the object 125 and / or the object holder 114 during the interaction with the particle beam.

[0105] The gas input device 1000 is provided with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 in the direction of the object 125, which can be placed near the surface of the object 125 and / or the surface of the object holder 114, for example at a distance of 10 μm to 1 mm from the surface of the object 125 and / or the surface of the object holder 114. The cannula 1003 has a supply opening, the diameter of which is, for example, in the range of 10 μm to 1000 μm, in particular in the range of 100 μm to 600 μm. The supply line 1002 has a valve 1004 for regulating the flow of the gaseous precursor into the supply line 1002. In other words, when the valve 1004 is open, the gaseous precursor is introduced from the precursor reservoir 1001 into the supply line 1002 and is guided to the surface of the object 125 and / or the surface of the object holder 114 via the cannula 1003. When valve 1004 is closed, the flow of the gaseous precursor to the surface of object 125 and / or the surface of object holder 114 stops.

[0106] The gas supply device 1000 is also provided with a regulating unit 1005, which enables adjustment of the position of the sleeve 1003 in all three spatial directions (i.e., the x-direction, the y-direction, and the z-direction) and adjustment of the orientation of the sleeve 1003 by rotation and / or tilting. The gas supply device 1000 and therefore also the regulating unit 1005 are connected to the control unit 123 of the SEM 100.

[0107] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Instead, in these further embodiments it is provided that the precursor reservoir 1001 is arranged, for example, on a wall of the room in which the SEM 100 is located.

[0108] The gas input device 1000 has a temperature measuring unit 1006. For example, an infrared measuring instrument or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the present invention is not limited to the use of such a temperature measuring unit. Instead, any temperature measuring unit suitable for the present invention can be used as the temperature measuring unit. In particular, it can be proposed that the temperature measuring unit 1006 is not arranged on the gas input device 1000 itself, but is arranged, for example, spaced apart from the gas input device 1000.

[0109] The gas input device 1000 also has a temperature setting unit 1007. The temperature setting unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature setting unit 1007 is designed as a heating and / or cooling device, which has, for example, a heating wire and / or a Peltier element. However, the present invention is not limited to the use of such a temperature setting unit 1007. Instead, any suitable temperature setting unit can be used in the present invention.

[0110] Figure 2 A particle irradiation device is shown in the form of a combined device 200. The combined device 200 has two particle irradiation columns. On the one hand, the combined device 200 is provided as in Figure 1 The SEM 100 already shown in FIG. 1 is shown in FIG. 2 , but without the sample chamber 120 . Instead, the SEM 100 is arranged at the sample chamber 201 . The sample chamber 201 is under vacuum. In order to generate the vacuum, a pump (not shown) is arranged at the sample chamber 201 . Figure 2 In the embodiment shown in FIG. 1 , the sample chamber 201 operates within a first pressure range or a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, while the second pressure range only includes pressures greater than 10 -3 In order to ensure these pressure ranges, the sample chamber 201 is sealed in terms of vacuum technology.

[0111] A sample chamber detector 119 is arranged in the sample chamber 201 . The sample chamber detector is designed as an Everhart-Thornley detector or an ion detector, for example, and has a light-shielded metal-coated detection surface. In addition, a third detector 121 is arranged in the sample chamber 201 .

[0112] The SEM 100 is used to generate a first particle beam, ie a primary electron beam, which has been described further above, and has an optical axis which has been mentioned above and which is located at Figure 2 The reference numeral 709 is provided in the sample chamber 201 and is also referred to as the first beam axis in the following text. On the other hand, the combined device 200 is provided with an ion irradiation device 300, which is also arranged at the sample chamber 201. The ion irradiation device 300 also has an optical axis, which is located at Figure 2 , is provided with reference numeral 710 and is also referred to below as second beam axis.

[0113] The SEM 100 is arranged vertically relative to the sample chamber 201. In contrast, the ion irradiation device 300 is arranged to be inclined at an angle of about 0° to 90° relative to the SEM 100. Figure 2 For example, an arrangement of about 50° is shown in FIG. The ion irradiation device 300 has a second beam generator in the form of an ion beam generator 301. Ions are generated by the ion beam generator 301, and these ions constitute a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302 that is at a predeterminable potential. Then, the second particle beam passes through the ion optical device of the ion irradiation device 300, wherein the ion optical device has a converging lens 303 and a second objective lens 304. The second objective lens 304 ultimately generates an ion probe, which is focused on an object 125 arranged at an object holder 114. The object holder 114 is arranged on a sample stage 122.

[0114] An adjustable or selectable baffle 306, a first electrode assembly 307 and a second electrode assembly 308 are arranged above the second objective lens 304 (i.e. in the direction of the ion beam generator 301), wherein the first electrode assembly 307 and the second electrode assembly 308 are designed as grid electrodes. With the aid of the first electrode assembly 307 and the second electrode assembly 308, the second particle beam is scanned over the surface of the object 125, wherein the first electrode assembly 307 acts in a first direction and the second electrode assembly 308 acts in a second direction opposite to the first direction. Thus, for example, scanning is performed in the x-direction. By rotating the further electrodes (not shown) at the first electrode assembly 307 and the second electrode assembly 308 by 90°, scanning is performed in the y-direction perpendicular to the x-direction.

[0115] As described above, the object holder 114 is arranged on the sample stage 122. Figure 2In the illustrated embodiment, the sample stage 122 also has a motion unit, and the object holder 114 is designed to be able to move in three directions arranged perpendicular to each other, namely, the x direction (first stage axis), the y direction (second stage axis), and the z direction (third stage axis). In addition, the sample stage 122 has a motion unit so that the object holder 114 can rotate around two rotation axes (stage rotation axes) arranged perpendicular to each other.

[0116] exist Figure 2 The distances between the various units of the combined device 200 shown in FIG. 2 are shown exaggeratedly in order to better illustrate the various units of the combined device 200 .

[0117] A radiation detector 500 is arranged on the sample chamber 201 , with which interaction radiation, for example X-ray radiation and / or cathodoluminescence, is detected. The radiation detector 500 is connected to a control unit 123 , which has a monitor 124 .

[0118] The control unit 123 processes the data from the first detector 116 and the second detector 117 ( Figure 2 ), detection signals generated by the sample chamber detector 119, the third detector 121 and / or the radiation detector 500, and displayed on the monitor 124 in the form of an image or a spectrum.

[0119] The control unit 123 also has a database 126 in which data are stored and read out from the database. In addition, the control unit 123 has a processor 127 into which a computer program product with a program code is loaded, which controls the combined device 200 when executed so that the method according to the invention is performed. This will be explained in detail below.

[0120] The combined device 200 has a gas input device 1000 for conveying a gaseous precursor to a specific location on the surface of the object 125 and / or the object holder 114. The gas input device 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is contained in the precursor reservoir 1001, for example, as a solid, gaseous or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid phase, liquid phase and gas phase is adapted so that the required vapor pressure is available.

[0121] For example, phenanthrene is used as a precursor. Then, a carbon layer or a layer containing carbon is basically deposited on the surface of the object 125 and / or the object holder 114. Instead, for example, a precursor with a metal can be used to deposit a metal or a layer containing a metal on the surface of the object 125 and / or the object holder 114. However, the deposit is not limited to carbon and / or metal. Instead, any substance, such as a semiconductor, a non-conductor or other compound, can be deposited on the surface of the object 125 and / or the object holder 114. In addition, it is also proposed to use a precursor to grind the material of the object 125 and / or the object holder 114 when interacting with one of the two particle beams.

[0122] The gas input device 1000 is provided with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 in the direction of the object 125 and / or the object holder 114, which can be placed close to the surface of the object 125 and / or the surface of the object holder 114, for example at a distance of 10 μm to 1 mm from the surface of the object 125 and / or the surface of the object holder 114. The cannula 1003 has a supply opening, the diameter of which is, for example, in the range of 10 μm to 1000 μm, in particular in the range of 100 μm to 600 μm. The supply line 1002 has a valve 1004 for regulating the flow of the gaseous precursor into the supply line 1002. In other words, when valve 1004 is open, the gaseous precursor is introduced from precursor reservoir 1001 into supply line 1002 and directed to the surface of object 125 and / or the surface of object holder 114 via cannula 1003. When valve 1004 is closed, the flow of the gaseous precursor to the surface of object 125 and / or the surface of object holder 114 stops.

[0123] The gas supply device 1000 is also provided with a regulating unit 1005, which enables adjustment of the position of the sleeve 1003 in all three spatial directions (i.e., the x-direction, the y-direction, and the z-direction) and adjustment of the orientation of the sleeve 1003 by rotation and / or tilting. The gas supply device 1000 and therefore also the regulating unit 1005 are connected to the control unit 123 of the combined device 200.

[0124] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, in these further embodiments it is provided that the precursor reservoir 1001 is arranged, for example, on a wall of the room in which the combination device 200 is located.

[0125] The gas input device 1000 has a temperature measuring unit 1006. For example, an infrared measuring instrument or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the present invention is not limited to the use of such a temperature measuring unit. Instead, any temperature measuring unit suitable for the present invention can be used as the temperature measuring unit. In particular, it can be proposed that the temperature measuring unit 1006 is not arranged on the gas input device 1000 itself, but is arranged, for example, spaced apart from the gas input device 1000.

[0126] The gas input device 1000 also has a temperature setting unit 1007. The temperature setting unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature setting unit 1007 is designed as a heating and / or cooling device, which has, for example, a heating wire and / or a Peltier element. However, the present invention is not limited to the use of such a temperature setting unit 1007. Instead, any suitable temperature setting unit can be used in the present invention.

[0127] Figure 3 A schematic diagram of a further embodiment of a particle irradiation device according to the invention is shown. This embodiment of the particle irradiation device is provided with reference numeral 400 and comprises a mirror corrector for correcting, for example, color distortion and / or spherical distortion. The particle irradiation device 400 comprises a particle irradiation column 401 which is formed as an electron irradiation column and substantially corresponds to the electron irradiation column of a calibrated SEM. The particle irradiation device 400 is not limited to a SEM with a mirror corrector. Rather, the particle irradiation device 400 may comprise any type of corrector unit.

[0128] The particle radiation column 401 includes a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403 and an anode 404. For example, the electron source 402 is designed as a thermal field emitter. The electrons leaving the electron source 402 are accelerated toward the anode 404 due to the potential difference between the electron source 402 and the anode 404. Accordingly, a particle beam in the form of an electron beam is formed along a first optical axis OA1.

[0129] After the particle beam leaves the electron source 402 , the particle beam is guided along a beam path which corresponds to the first optical axis OA1 . To guide the particle beam, a first electrostatic lens 405 , a second electrostatic lens 406 and a third electrostatic lens 407 are used.

[0130] In addition, the particle beam is adjusted along the beam path when a beam guide is used. The beam guide of this embodiment includes a source adjustment unit, which has two magnetic deflection units 408 arranged along the first optical axis OA1. In addition, the particle radiation device 400 includes an electrostatic beam deflection unit. In another embodiment, the first electrostatic beam deflection unit 409, which is also designed as a quadrupole, is arranged between the second electrostatic lens 406 and the third electrostatic lens 407. The first electrostatic beam deflection unit 409 is also arranged after the magnetic deflection unit 408. A first multipole unit 409A in the form of a first magnetic deflection unit is arranged on one side of the first electrostatic beam deflection unit 409. In addition, a second multipole unit 409B in the form of a second magnetic deflection unit is arranged on the other side of the first electrostatic beam deflection unit 409. The first electrostatic beam deflection unit 409, the first multipole unit 409A and the second multipole unit 409B are adjusted to adjust the particle beam relative to the axis of the third electrostatic lens 407 and the entrance window of the beam deflection device 410. The first electrostatic beam deflection unit 409 , the first multipole unit 409A and the second multipole unit 409B can interact like a Wien filter. A further magnetic deflection element 432 is arranged at the entrance of the beam deflection device 410 .

[0131] The beam deflector 410 is used as a particle beam deflector, which deflects the particle beam in a specific manner. The beam deflector 410 includes a plurality of magnetic sectors, namely a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F and a seventh magnetic sector 411G. The particle beam enters the beam deflector 410 along the first optical axis OA1 and is deflected by the beam deflector 410 in the direction of the second optical axis OA2. The beam is deflected by the first magnetic sector 411A, the second magnetic sector 411B and the third magnetic sector 411C at an angle of 30° to 120°. The second optical axis OA2 is oriented to be the same angle as the first optical axis OA1. The beam deflection device 410 also deflects the particle beam directed along the second optical axis OA2, specifically in the direction of the third optical axis OA3. The beam deflection is provided by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E. Figure 3In the embodiment of the invention, the deflection to the second optical axis OA2 and to the third optical axis OA3 is provided by deflecting the particle beam by an angle of 90°. Therefore, the third optical axis OA3 extends coaxially with the first optical axis OA1. However, it should be noted that the particle radiation device 400 is not limited to a deflection angle of 90° in the invention described herein. Instead, any suitable deflection angle, such as 70° or 110°, can be selected by the beam deflection device 410, so that the first optical axis OA1 and the third optical axis OA3 do not extend coaxially. For further details about the beam deflection device 410, see WO 02 / 067286A2.

[0132] After the particle beam has been deflected by the first magnetic sector 411A, the second magnetic sector 411B and the third magnetic sector 411C, the particle beam is guided along the second optical axis OA2. The particle beam is guided to the electrostatic mirror 414 and the particle beam advances along the fourth electrostatic lens 415, the third multipole unit 416A in the form of a magnetic deflection unit, the second electrostatic beam deflection unit 416, the third electrostatic beam deflection unit 417 and the fourth multipole unit 416B in the form of a magnetic deflection unit on its path to the electrostatic mirror 414. The electrostatic mirror 414 includes a first mirror electrode 413A, a second mirror electrode 413B and a third mirror electrode 413C. The electrons of the particle beam reflected back at the electrostatic mirror 414 advance again along the second optical axis OA2 and enter the beam deflection device 410 again. These electrons are then deflected to the third optical axis OA3 by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E.

[0133] The electrons of the particle beam leave the beam deflection device 410 and are guided along the third optical axis OA3 to the object 425, which is to be inspected and arranged in the object holder 114. On the way to the object 425, the particle beam is guided to the fifth electrostatic lens 418, the beam guide tube 420, the fifth multipole unit 418A, the sixth multipole unit 418B and the objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is braked or accelerated by the fifth electrostatic lens 418 to the potential of the beam guide tube 420.

[0134] The particle beam is focused into a focal plane by an objective lens 421, and an object 425 is arranged in the focal plane. The object holder 114 is arranged on a movable sample stage 424. The movable sample stage 424 is arranged in a sample chamber 426 of the particle radiation device 400. The sample stage 424 has a motion unit, and the object holder 114 is designed to be able to move in three directions arranged perpendicular to each other, namely, in the x direction (first stage axis), the y direction (second stage axis) and the z direction (third stage axis). In addition, the sample stage 424 has a motion unit so that the object holder 114 can rotate around two rotation axes (stage rotation axes) arranged perpendicular to each other.

[0135] The sample chamber 426 is under vacuum. In order to generate the vacuum, a pump (not shown) is arranged at the sample chamber 426. Figure 3 In the embodiment shown in FIG. 4 , the sample chamber 426 operates within a first pressure range or a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, while the second pressure range only includes pressures greater than 10 -3 In order to ensure these pressure ranges, the sample chamber 426 is sealed in terms of vacuum technology.

[0136] The objective lens 421 can be designed as a combination of a magnetic lens 422 and a sixth electrostatic lens 423. The end of the beam guide tube 420 can also be an electrode of the electrostatic lens. The particles of the particle radiation device are braked to the potential of the object 425 after they leave the beam guide tube 420. The objective lens 421 is not limited to the combination of the magnetic lens 422 and the sixth electrostatic lens 423. Instead, the objective lens 421 can adopt any suitable embodiment. For example, the objective lens 421 can also be designed as a pure magnetic lens or a pure electrostatic lens.

[0137] The particle beam focused on the object 425 interacts with the object 425. Interaction particles are generated. In particular, secondary electrons are emitted from the object 425 or backscattered electrons are backscattered at the object 425. The secondary electrons or backscattered electrons are accelerated again and guided into the beam guide tube 420 along the third optical axis OA3. The trajectories of the secondary electrons and backscattered electrons extend in the direction opposite to the particle beam, in particular, on the path of the beam of the particle beam.

[0138] The particle irradiation device 400 includes a first analysis detector 419, which is arranged along the beam path between the beam deflection device 410 and the objective lens 421. Secondary electrons advancing in a direction oriented at a large angle relative to the third optical axis OA3 are detected by the first analysis detector 419. Backscattered electrons and secondary electrons having a small axial spacing at the position of the first analysis detector 419 relative to the third optical axis OA3 (that is, backscattered electrons and secondary electrons having a small spacing from the third optical axis OA3 at the first analysis detector 419) enter the beam deflection device 410 and are deflected by the fifth magnetic sector 411E, the sixth magnetic sector 411F and the seventh magnetic sector 411G along the detection beam path 427 to the second analysis detector 428. The deflection angle is, for example, 90° or 110°.

[0139] The first analysis detector 419 generates detection signals, which are essentially generated by the emitted secondary electrons. The detection signals generated by the first analysis detector 419 are guided to the control unit 123 and are used to obtain information about the characteristics of the interaction range of the focused particle beam and the object 425. In particular, the focused particle beam is scanned on the object 425 when a scanning device 429 is used. Through the detection signals generated by the first analysis detector 419, an image of the scanned area of ​​the object 425 can then be generated and displayed on a display unit. The display unit is, for example, a monitor 124 arranged at the control unit 123.

[0140] The second analysis detector 428 is also connected to the control unit 123. The detection signal of the second analysis detector 428 is directed to the control unit 123 and used to generate an image of the scanned area of ​​the object 425 and displayed on a display unit. The display unit is, for example, a monitor 124 arranged at the control unit 123.

[0141] A radiation detector 500 is arranged at the sample chamber 426, by which interaction radiation, such as X-ray radiation and / or cathode luminescence, is detected. The radiation detector 500 is connected to a control unit 123, which has a monitor 124. The control unit 123 processes the detection signals of the radiation detector 500 and displays these detection signals on the monitor 124 in the form of images and / or spectra.

[0142] The control unit 123 also has a database 126 in which data are stored and from which data are read. In addition, the control unit 123 has a processor 127 into which a computer program product with a program code is loaded, which, when executed, controls the particle radiation device 400 in such a way that the method according to the invention is carried out. This will be explained in detail further below.

[0143] The particle radiation device 400 has a gas input device 1000 for conveying a gaseous precursor to a specific location on the surface of the object 425 and / or the object holder 114. The gas input device 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is accommodated in the precursor reservoir 1001, for example, as a solid, gaseous or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid phase, liquid phase and gas phase is adapted so that the required vapor pressure is available.

[0144] For example, phenanthrene is used as a precursor. Then, a carbon layer or a layer containing carbon is basically deposited on the surface of the object 425 and / or the object holder 114. Instead, for example, a precursor with a metal can be used to deposit a metal or a layer containing a metal on the surface of the object 425 and / or the object holder 114. However, the deposit is not limited to carbon and / or metal. Instead, any substance, such as a semiconductor, a non-conductor or other compound, can be deposited on the surface of the object 425 and / or the object holder 114. In addition, it is also proposed to use a precursor to grind the material of the object 425 and / or the object holder 114 when interacting with the particle beam.

[0145] The gas input device 1000 is provided with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 in the direction of the object 425 and / or the object holder 114, which can be placed close to the surface of the object 425 and / or the surface of the object holder 114, for example at a distance of 10 μm to 1 mm from the surface of the object 425 and / or the surface of the object holder 114. The cannula 1003 has a supply opening, the diameter of which is, for example, in the range of 10 μm to 1000 μm, in particular in the range of 100 μm to 600 μm. The supply line 1002 has a valve 1004 for regulating the flow of the gaseous precursor into the supply line 1002. In other words, when valve 1004 is open, the gaseous precursor is introduced from precursor reservoir 1001 into supply line 1002 and directed to the surface of object 425 and / or the surface of object holder 114 via cannula 1003. When valve 1004 is closed, the flow of the gaseous precursor to the surface of object 425 and / or the surface of object holder 114 stops.

[0146] The gas supply device 1000 is also provided with a regulating unit 1005, which enables the position of the sleeve 1003 to be adjusted in all three spatial directions (i.e., the x-direction, the y-direction, and the z-direction) and the orientation of the sleeve 1003 to be adjusted by rotation and / or tilting. The gas supply device 1000 and therefore also the regulating unit 1005 are connected to the control unit 123 of the particle radiation device 400.

[0147] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, in these further embodiments it is provided that the precursor reservoir 1001 is arranged, for example, on a wall of the room in which the particle irradiation system 400 is located.

[0148] The gas input device 1000 has a temperature measuring unit 1006. For example, an infrared measuring instrument or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the present invention is not limited to the use of such a temperature measuring unit. Instead, any temperature measuring unit suitable for the present invention can be used as the temperature measuring unit. In particular, it can be proposed that the temperature measuring unit 1006 is not arranged on the gas input device 1000 itself, but is arranged, for example, spaced apart from the gas input device 1000.

[0149] The gas input device 1000 also has a temperature setting unit 1007. The temperature setting unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature setting unit 1007 is designed as a heating and / or cooling device, which has, for example, a heating wire and / or a Peltier element. However, the present invention is not limited to the use of such a temperature setting unit 1007. Instead, any suitable temperature setting unit can be used in the present invention.

[0150] Next, the sample stage 122 of the SEM 100, the sample stage 122 of the combined device 200, and the sample stage 424 of the particle radiation device 400 will now be discussed. The sample stages 122, 424 are designed as sample stages having a motion unit, which is Figure 4 and Figure 5 It is to be noted that the present invention is not limited to the sample stages 122, 424 described herein. Rather, the present invention may have any movable sample stage suitable for the present invention.

[0151] An object holder 114 with an object 125, 425 is arranged on the sample stage 122, 424. The sample stage 122, 424 has a movement unit which ensures the movement of the object holder 114 in such a way that a region of interest on the object 125, 425 can be examined by means of a particle beam. Figure 4 and Figure 5 The motion unit is schematically shown in FIG. 2 and explained below.

[0152] The sample stage 122, 424 has a first movement unit 600 on a housing 601 of the sample chamber 120, 201, 426, in which the sample stage 122, 424 is arranged. The first movement unit 600 is used to realize the movement of the object holder 114 along the z-axis (third stage axis). In addition, a second movement unit 602 is provided. The second movement unit 602 realizes the rotation of the object holder 114 around the first stage rotation axis 603 (also called the tilt axis). This second movement unit 602 is used to tilt the object 125, 425 around the first stage rotation axis 603.

[0153] A third motion unit 604 is arranged on the second motion unit 602, which is designed as a guide for a slide and ensures that the object holder 114 can move in the x direction (first table axis). The aforementioned slide is another motion unit, namely the fourth motion unit 605. The fourth motion unit 605 is designed to enable the object holder 114 to move in the y direction (second table axis). For this purpose, the fourth motion unit 605 has a guide, in which another slide is guided, and on which a holding portion 609 with the object holder 114 and the objects 125, 425 is arranged.

[0154] The holding portion 609 is in turn designed to have a fifth movement unit 606, which enables the holding portion 609 to rotate about a second stage rotation axis 607. The second stage rotation axis 607 is oriented perpendicularly to the first stage rotation axis 603.

[0155] Due to the above arrangement, the sample stage 122, 424 of the embodiment discussed here has the following motion chain: first motion unit 600 (moves along the z-axis) - second motion unit 602 (rotates around the first stage rotation axis 603) - third motion unit 604 (moves along the x-axis) - fourth motion unit 605 (moves along the y-axis) - fifth motion unit 606 (rotates around the second stage rotation axis 607).

[0156] In other specific embodiments (not shown), it is provided that a further movement unit is arranged on the sample stage 122 , 424 , so that a movement along a further translation axis and / or about a further rotation axis is possible.

[0157] As from Figure 5As can be seen in , each of the above-mentioned motion units is connected to a stepper motor. Therefore, the first motion unit 600 is connected to the first stepper motor M1 and is driven by the driving force provided by the first stepper motor M1. The second motion unit 602 is connected to the second stepper motor M2, which drives the second motion unit 602. The third motion unit 604 is connected to the third stepper motor M3. The third stepper motor M3 provides a driving force to drive the third motion unit 604. The fourth motion unit 605 is connected to the fourth stepper motor M4, wherein the fourth stepper motor M4 drives the fourth motion unit 605. In addition, the fifth motion unit 606 is connected to the fifth stepper motor M5. The fifth stepper motor M5 provides a driving force to drive the fifth motion unit 606. The aforementioned stepper motors M1 to M5 are controlled by a control unit 608 (see Figure 5 ).

[0158] Figure 6 The schematic diagram shows a further embodiment of an SEM 100 , a composite device 200 and a particle irradiation device 400 with a sample stage 122 , 424 . This embodiment has a laser beam device 700 which is arranged in and / or on the SEM 100 , the composite device 200 and the particle irradiation device 400 . Figure 7 A schematic diagram of yet another further embodiment of the SEM 100, the combined device 200 and the particle irradiation device 400 with the sample stage 122, 424 is shown. In this embodiment, the laser beam device 700 is not arranged in or on the SEM 100, the combined device 200 and the particle irradiation device 400. Instead, the laser beam device 700 is a device separate from the SEM 100, the combined device 200 and the particle irradiation device 400.

[0159] An embodiment of the method according to the invention is explained in more detail below in conjunction with the combined device 200. The execution of the method according to the invention in conjunction with the SEM 100 and / or the particle radiation device 400 proceeds analogously.

[0160] Figure 8A schematic diagram of a process of an embodiment of the method according to the present invention is shown. In method step S1, an object 125 is first produced, which should be processed, imaged and / or analyzed later. For example, in this embodiment of the method according to the present invention, an object 125 in the form of a sub-block of a material block is exposed in the material block and produced from the material block using an ion beam of a combined device 200. The exposure is performed, for example, by grinding the material of the material block with an ion beam. To this end, for example, a gas can be delivered to the material block through a supply line 1002 of a gas input device 1000, and the gas interacts with the ion beam and the material of the material block so that the material of the material block is ground. The material block has an extension in the millimeter range, for example. The object 125 produced in the form of a sub-block has, for example, a thickness of several micrometers (especially 3μm to 6μm) and a length of, for example, tens of μm (especially 30μm to 80μm).

[0161] In a further method step S2, the manufactured object 125 is arranged at the object holder 114. For this purpose, for example, the manufactured object 125 is fastened to a micromanipulator (not shown) and removed from the material block. For example, the fastening is achieved by delivering the gas of the gas input device 1000 to the connection position between the object 125 and the micromanipulator. Due to the interaction between the ion beam and the gas, the material is applied to the connection position so that the manufactured object 125 is fastened to the micromanipulator. Then, the object 125 is arranged on the object holder 114. For this purpose, the object 125 is fastened to the object holder 114 and released from the micromanipulator again. For example, the fastening on the object holder 114 is also achieved by delivering the gas of the gas input device 1000 to the connection position between the object 125 and the object holder 114. Due to the interaction between the ion beam and the gas, the material is applied to the connection position so that the object 125 is fastened to the object holder 114. For example, by delivering gas from the gas input device 1000 to the connection point between the object 125 and the micromanipulator, the object 125 is released again. Due to the interaction between the ion beam and the gas, the material at the connection point is ground off, so that the micromanipulator releases the object 125. As an alternative to this, it is proposed that in order to release the object 125 from the micromanipulator, only the ion beam is used, and the material at the connection point between the object 125 and the micromanipulator is ground off with the ion beam. In another embodiment of the method according to the invention, it is additionally or alternatively proposed that the object 125 is directly arranged on the object holder 114 without an intermediate step, that is, the object 125 is arranged on the micromanipulator.

[0162] Fig. 91 is a schematic diagram showing a side view of the object holder 114. The object holder 114 includes a first holding device 701, a second holding device 702, a third holding device 703 and a fourth holding device 704. The aforementioned holding devices 701 to 704 are arranged at intervals from each other and are used to hold the object 125. Fig. 9 In the embodiment of the object holder 114 shown, the object 125 is arranged on the first holding device 701. The arrangement of the object 125 on the first holding device 701 is carried out, for example, by means of the method steps already explained above. For example, it is proposed that the object holder 114 is designed to transport charged particles to the object 125, wherein the charged particles are transmitted through the object 125. In particular, the charged particles are electrons or ions. In addition, it is proposed, for example, that the object holder 114 is designed as a TEM object holder, which can be used for further imaging and analyzing the object 125 in a TEM (not shown). In addition to this or in lieu thereof, it is proposed that the object holder 114 remains inserted in the combined device 200 and the object 125 is analyzed using the third detector 121. It is explicitly pointed out that the method according to the present invention is not limited to the aforementioned embodiment of the object holder 114. Instead, any object holder suitable for performing the method according to the present invention can be used.

[0163] In method step S3, at least one marking is arranged on the object holder 114. In other words, at least one marking is produced on the object holder 114. Method step S3 can also be carried out before or during method step S2. For example, the marking is produced using a laser beam of the laser beam device 700. This can be done, for example, in the combined device 200 (see Figure 6 ). Alternatively, the object holder 114 can be removed from the assembly device 200, for example. Subsequently, a marking is produced on the object holder 114 with the laser beam device 700 (see Figure 7 ). Material is removed from the object holder 114 by means of the laser beam device 700 in such a way that a marking is produced. Additionally or alternatively, it is proposed that material is removed from the object holder 114 and / or material is applied to the object holder 114 by means of an ion beam, for example, so that a marking is produced by material removal and / or material application. For material application and / or material removal, gas is supplied to the object holder 114, for example, by means of a gas supply device 1000. The ion beam and / or the laser beam interact with the gas and the material of the object holder 114 so that material is applied to the object holder 114 or removed from the object holder 114. Fig.10 Shown according to Fig. 9114 . In method step S3, a mark 705 is arranged on a first holding device 701 using the method according to the present invention. For example, the mark 705 is generated as a mark having at least one edge, a first plane extending from the edge in a first dimension, and a second plane extending from the edge in a second dimension. In particular, it is proposed that the mark 705 is generated as a mark having at least one first edge and at least one second edge, wherein a first plane in the first dimension and a second plane in the second dimension extend respectively from both the first edge and the second edge. The first planes are, for example, different from each other. In addition, the second planes are, for example, different from each other. In addition or alternatively thereto, the mark 705 is generated as a cross mark. In addition or alternatively thereto, the mark 705 is generated as a star mark. In another embodiment of the method according to the present invention, the mark 705 is generated as an X-shaped mark and / or an L-shaped mark and / or a polygon.

[0164] In method step S4, a reference image with a mark 705 is generated by means of an ion beam. For this purpose, the ion beam is directed onto a mark 705 arranged on the object holder 114. Due to the interaction between the ion beam and the mark 705, interaction particles, in particular secondary electrons, are generated. The interaction particles are detected, for example, by means of a sample chamber detector 119. The detection signal generated by the sample chamber detector 119 is transmitted to the control unit 123 to generate a reference image with a mark 705. Alternatively, it is proposed to generate a reference image with a mark 705 by means of an electron beam. For this purpose, the electron beam is directed onto a mark 705 arranged on the object holder 114. Due to the interaction between the electron beam and the mark 705, interaction particles, in particular secondary electrons and backscattered electrons, are generated. These interaction particles are detected by the sample chamber detector 119, the first detector 116 and / or the second detector 117. The detection signals generated by the sample chamber detector 119 , the first detector 116 and / or the second detector 117 are transmitted to the control unit 123 in order to generate a reference image with the marking 705 .

[0165] In method step S5, the object holder 114 with the sample stage 122 is moved. The movement of the object holder 114 includes, for example, the movement of the object holder 114 along the x-axis, along the y-axis and / or along the z-axis. In addition to this or in lieu of this, it is proposed that the object holder 114 rotates around the first stage rotation axis 603 and / or around the second stage rotation axis 607. The aforementioned rotation particularly includes the tilting of the object holder 114. In particular, it is proposed that the object holder 114 and the object 125 arranged on the object holder 114 are rotated around the first stage rotation axis 603 and / or the second stage rotation axis 607 from the initial position by 0.5° to 5°, particularly 1° to 3° or 1° to 2°. The aforementioned range limits of the angular range are included in the angular range. It is explicitly pointed out that the present invention is not limited to the aforementioned angular range. Instead, any angular range suitable for the present invention can be used.

[0166] In method step S6, a further image with the mark 705 is generated. In other words, a further image with the mark 705 is generated by re-imaging the mark 705. For this purpose, an ion beam is directed onto the mark 705 arranged on the object holder 114. Due to the interaction of the ion beam with the mark 705, interaction particles, in particular secondary electrons, are generated. The interaction particles are detected, for example, by means of a sample chamber detector 119. The detection signal generated by the sample chamber detector 119 is transmitted to the control unit 123 to generate a further image with the mark 705. Instead of this, it is proposed to generate a further image with the mark 705 by means of an electron beam. For this purpose, the electron beam is directed onto the mark 705 arranged on the object holder 114. Due to the interaction of the electron beam with the mark 705, interaction particles, in particular secondary electrons and backscattered electrons, are generated. These interaction particles are detected by the sample chamber detector 119, the first detector 116 and / or the second detector 117. The detection signals generated by the sample chamber detector 119 , the first detector 116 and / or the second detector 117 are transmitted to the control unit 123 in order to generate a further image with the marking 705 .

[0167] In one embodiment of the method according to the invention, the reference image with marking 705 and the further image with marking 705 are each generated using an ion beam. In an alternative embodiment of the method according to the invention, the reference image with marking 705 and the further image with marking 705 are each generated using an electron beam.

[0168] For example, a reference image with the marking 705 and a further image with the marking 705 are automatically generated. The marking 705 is automatically recognized and the region of the marking 705 is imaged by means of an ion beam and / or an electron beam.

[0169] In method step S7, the reference image with the marking 705 is compared with the further image with the marking 705. For example, image recognition software is used for this purpose. Subsequently, the displacement vector is determined by comparing the reference image with the marking 705 with the further image with the marking 705. For example, a mathematical method of cross-correlation is used when determining the displacement vector. In the method according to the invention, the displacement of the ion beam and / or electron beam relative to the object 125 achieved by the movement of the object holder 114 can be significantly greater than the rotation relative to the object 125. Therefore, in the embodiment shown here, only the displacement vector is determined without taking into account the rotation. In addition to this or instead of this, it is proposed that the rotation is also taken into account.

[0170] The following is a more detailed explanation of an embodiment of the method according to the invention in the case of using cross-correlation. In the following embodiment of the method according to the invention, the marker 705 is designed as a polygon with edges. In particular, (a) a reference image with the marker 705 is generated, (b) a further image with the marker 705 is generated after the movement of the object holder 114, and (c) a displacement between the reference image with the marker 705 and the further image with the marker 705 is calculated using the processor 127.

[0171] The mark 705 may be a polygonal mark 705 having coordinates x and y of each node. i ,y i Using these coordinates for each node, the face center of the marker 705 can be calculated using the processor 127 using the following equation:

[0172]

[0173]

[0174] Where A is the area of ​​the polygon, given by

[0175]

[0176] The polygonal mark 705 has a face center, which passes through the coordinate C x , C y The center of the face of the marker 705 in the reference image is compared with the center of the face of the marker 705 in the other image.

[0177] Due to the inaccuracy of the mechanical structure of the moving unit of the sample stage 122, an undesirable relative displacement of the position of the ion beam and the position of the object 125 arranged on the object holder 114 may occur when the object holder 114 moves. In other words, after the movement of the object holder 114, the ion beam no longer hits the object 125 arranged on the object holder 114 at the position where the ion beam was focused before the movement of the object holder 114. In this case, the ion beam must be positioned relative to the object 125 so that the ion beam hits the desired position of the object 125, so as to be able to, for example, grind material or analyze the object 125. The relative positioning of the ion beam relative to the object 125 is achieved, for example, by recalibration (i.e. positioning) of the ion beam (e.g. by means of the first electrode assembly 307 and / or the second electrode assembly 308 and / or the second objective lens 304) and / or by the movement of the object holder 114. Larger displacements of several μm can be compensated by the movement of the object holder 114. The foregoing also applies similarly to the electron beam. After the movement of the object holder 114, the electron beam no longer hits the object 125 arranged on the object holder 114 at the position where the electron beam was focused before the movement of the object holder 114. The relative positioning of the electron beam with respect to the object 125 is achieved, for example, by recalibrating (i.e. positioning) the electron beam (e.g. by means of the first focusing lens 105 and / or the second focusing lens 106 and / or the first objective lens 107 and / or the scanning device 115 of the SEM 100) and / or by the movement of the object holder 114. Larger displacements of several μm can be compensated by the movement of the object holder 114. The electron beam then hits the desired position of the object 125 again, so that, for example, the object 125 can be imaged and / or inspected.

[0178] Alternatively, the electron beam can be used to image the mark 705, while the ion beam is used to process the object 125. Here, the relative position of the ion beam with respect to the electron beam is fixed, so that the correction of the displacement of the electron beam with respect to the object 125 can be converted into the correction of the displacement of the ion beam with respect to the object 125.

[0179] The possible displacement of the center of the face is determined by correlating the reference image with the marker 705 with the further image with the marker 705. The displacement is represented by the displacement vector (d x , d y ) to indicate.

[0180] Then, using the displacement vector (d x , d y ), determine how the ion beam and / or electron beam must be positioned in order to re-impact the position on the object 125 at which the ion beam and / or electron beam hit before the object holder 114 was moved. The corresponding coordinates of the position at which the ion beam and / or electron beam is now focused are given, for example, as follows:

[0181]

[0182] In method step S8, the ion beam and / or electron beam is now positioned relative to the object 125 using the marking 705. In other words, after the movement of the object holder 114, the ion beam and / or electron beam is relatively positioned by displacement so that the ion beam and / or electron beam can be directed to the position on the object 125 at which the ion beam and / or electron beam was focused before the movement of the object holder 114. A previously determined displacement vector is used for this purpose. The relative positioning of the ion beam relative to the object 125 is achieved, for example, by recalibrating (i.e. positioning) the ion beam (e.g. by means of the first electrode assembly 307 and / or the second electrode assembly 308 and / or the second objective lens 304) and / or by the movement of the object holder 114. The relative positioning of the electron beam with respect to the object 125 is achieved, for example, by recalibrating (i.e. positioning) the electron beam (e.g. with the aid of the first focusing lens 105 and / or the second focusing lens 106 and / or the first objective lens 107 and / or the scanning device 115 of the SEM 100) and / or by moving the object holder 114.

[0183] In method step S9, the object 125 arranged on the object holder 114 is now processed, imaged and / or analyzed, for example using an ion beam and / or an electron beam. For example, the ion beam removes material from the object 125 until the sub-piece has a thickness of less than 100 nm, for example less than 80 nm, less than 60 nm, less than 40 nm or less than 20 nm. In particular, the thickness is in the range between 1 nm and 10 nm. In an embodiment, for this purpose, a gas is supplied to the object 125 by means of a gas supply device 1000, wherein the gas interacts with the ion beam and the object 125 so that material is removed from the object 125. This will be discussed further below.

[0184] Additionally or alternatively, it is proposed that the processing of object 125 includes arranging a material on object 125. This can be achieved, for example, by supplying at least one gas to object 125 using gas supply device 1000, wherein the gas interacts with the ion beam such that the material is arranged on object 125.

[0185] In addition or as an alternative thereto, it is proposed that the analysis of the object 125 arranged on the object holder 114 comprises an analysis of the object 125 by means of EDX, by means of WDX, by means of EBSD, by means of TKD examination and / or by means of an examination of the third detector 121 of the combined device 200. For this purpose, for example, an electron beam is directed onto the object 125, in particular onto the above-mentioned sub-piece of the object 125 having a thickness of less than 100 nm.

[0186] Additionally or alternatively, it is proposed that the object 125 arranged on the object holder 114 is imaged by means of an ion beam and / or an electron beam. For this purpose, the ion beam and / or the electron beam is directed onto the object 125, in particular onto the above-mentioned sub-piece of the object 125 with a thickness of less than 100 nm, and scanned over the object 125. An interaction of the ion beam and / or the electron beam with the object 125 occurs. For example, the sample chamber detector 119 is used to detect the interaction particles, in particular secondary electrons, generated during the interaction. The detection signal is sent to the control unit 123 to generate an image of the object 125.

[0187] In an embodiment of the method according to the invention, method steps S5 to S9 are repeated after method step S9. This is particularly advantageous when the thickness of object 125 or at least a sub-block of object 125 is to be reduced. Fig.15 Shown in. Fig.15 A top view of a first holding device 701 is shown, which has a face 706 with a marking 705. An object 125 is arranged on the first holding device 701, the object having a sub-block 708 of the object 125, the thickness of which is reduced by material grinding. To achieve this, in an embodiment of the method according to the invention, in a first operation of method step S5, the object holder 114 and the object 125 arranged on the object holder 114 are rotated from an initial position about the first table rotation axis 603 and / or the second table rotation axis 607 in a first direction by 0.5° to 5°, in particular 1° to 3° or 1° to 2°. The aforementioned range limits of the angular range are included in the angular range. It is explicitly pointed out that the present invention is not limited to the aforementioned angular range. Instead, any angular range suitable for the present invention can be used. Method steps S6 to S9 are then performed, wherein, in method step S9, the material on the first side of the sub-block 708 is ground. In the second operation of method step S5, the object holder 114 and the object 125 arranged on the object holder 114 are rotated from the initial position around the first table rotation axis 603 and / or the second table rotation axis 607 in the second direction by 0.5° to 5°, in particular 1° to 3° or 1° to 2°. The second direction is opposite to the first direction. The aforementioned range limits of the angular range are included in the angular range. It is explicitly pointed out that the present invention is not limited to the aforementioned angular range. Instead, any angular range suitable for the present invention can be used. Method steps S6 to S9 are then performed, wherein, in method step S9, the material on the second side of the sub-block 708 is ground. The second side is arranged opposite to the first side. In addition, the first side and the second side are arranged at intervals from each other.

[0188] Fig.11 A further embodiment of the method according to the invention is shown. Fig.11Another embodiment of the method of the present invention is based on Figure 8 Therefore, reference is first made to the above explanations, which also apply here. Figure 8 The method according to the invention can be implemented in different ways, depending on Fig.11 A further embodiment of the method according to the invention has a further method step S10, which is performed, for example, between method step S1 and method step S2. Alternatively, method step S10 can be performed at any time before method step S3. In method step S10, a surface is first generated on the object holder 114, on which the marking 705 is arranged in method step S3. If the object holder 114 has no surface or only an unsuitable surface for arranging the marking 705 (for example, at an unsuitable height, with an unsuitable orientation, with a curved or very inclined surface), it is proposed in this embodiment of the method according to the invention that this surface is first generated on the object holder 114. Fig.12 An embodiment of an object holder 114 having a first holding device 701, a second holding device 702, a third holding device 703 and a fourth holding device 704 is shown. The ends of the aforementioned holding devices 701 to 704 have rounded portions. For example, an object 125 is arranged on the first holding device 701. In the region of the rounded portion of the first holding device 701, a surface should be arranged, on which a marking 705 is arranged. Then, for example, an ion beam is used to generate a surface on the first holding device 701 of the object holder 114. This is achieved, for example, by grinding the material on the first holding device 701 of the object holder 114 using an ion beam. For grinding, gas can be supplied to the first holding device 701, in particular using a gas input device 1000. Due to the interaction of the ion beam with the gas and the material of the first holding device 701, the material of the first holding device 701 is ground. Additionally or alternatively thereto, it is proposed that the surface can be produced by applying material to first holding device 701 using an ion beam and conveying a gas of gas supply device 1000 . Fig.13 A schematic illustration of a first holding device 701 is shown with a surface produced on the holding device 701 , wherein the surface is provided with the reference numeral 706 .

[0189] In accordance with Figure 8 According to a further embodiment of the method according to the invention, in method step S2, the object 125 is arranged on the object holder 114 in such a way that the surface of the object 125 is arranged at an angle of 0° to 360°, for example 5° to 80°, relative to the surface of the object holder 114 that is freely accessible to the ion beam and / or electron beam. For example, the surface of the object 125 is arranged parallel to the surface of the object holder 114 that is freely accessible to the ion beam and / or electron beam. This is Fig.13 The object 125 is arranged on the first holding device 701 of the object holder 114 such that the surface 706 on the first holding device 701 is oriented parallel to the surface 707 of the object 125. Fig.13 In the embodiment shown, the surface 707 of the object 125 and the surface 706 of the first holding device 701 are arranged in a single plane. In other words, the surface 707 of the object 125 and the surface 706 of the first holding device 701 are at the same height. The marking 705 is produced and arranged on the surface 706 of the first holding device 701. This embodiment of the method according to the invention ensures particularly good positioning of the ion beam and / or electron beam relative to the object 125, since the marking 705 and the object 125 are arranged in a single plane. Additionally or alternatively, it is proposed that the surface 707 of the object 125 and the surface 706 of the first holding device 701 are arranged in different planes. This Fig.14 Shown in. Fig.14 based on Fig.13 The same components are provided with the same reference numerals.

[0190] In accordance with Figure 8 In yet another embodiment of the method according to the invention, it is proposed that the ion beam used to generate the mark 705 on the object holder 114, for example in method step S3, has a predeterminable beam current. For example, the beam current of the ion beam is in the range of 10pA to 500pA. The range limit is included in this range. It is explicitly pointed out that the present invention is not limited to the aforementioned range. Instead, the present invention can use any range suitable for the present invention. In this embodiment of the method according to the invention, it is proposed that (i) a reference image with the mark 705 is generated, (ii) another image with the mark 705 is generated, and (iii) an object 125 is processed, imaged and / or analyzed by means of an ion beam with this predeterminable beam current. Therefore, in this embodiment of the method according to the invention, it is proposed that the ion beam is always operated with the same beam current (i.e., the predeterminable beam current) and specifically in the generation of a reference image with the mark 705, in the processing, imaging and / or analysis of the object 125, and in the generation of another image with the mark 705.

[0191] In accordance with Figure 8In another embodiment of the method according to the present invention, it is proposed that the ion beam has a first beam current that can be predetermined or a second beam current that can be predetermined. A reference image with a mark 705 is generated using an ion beam with a first beam current that can be predetermined. For example, the first beam current of the ion beam is in the range of 1nA to 10nA. The range limit is included in this range. It is explicitly pointed out that the present invention is not limited to the aforementioned range. Rather, the present invention can use any range suitable for the present invention. The second beam current of the ion beam is, for example, in the range of 10pA to 500pA. For example, another image with a mark 705 is generated with the aid of an ion beam with a first beam current or with a second beam current. In addition, the object 125 is processed, imaged and / or analyzed with the aid of an ion beam with a second beam current.

[0192] The invention has the advantage that, in particular after a movement of the object holder 114, but also after any other relative movement of the object holder 114 relative to the particle beam (and / or laser beam, if such a laser beam is used), a relative positioning of the particle beam and / or laser beam relative to the object 125 arranged on the object holder 114 can be easily achieved. In particular, the relative positioning of the particle beam and / or laser beam relative to the object 125 can be performed automatically.

[0193] All described embodiments of the method according to the invention are not limited to the above-described order of the method steps described. Rather, in the method according to the invention, any order of the above-described method steps that is suitable for the invention can be selected.

[0194] The features of the invention disclosed in the description, in the drawings and in the claims are essential, individually and in any combination, for the realization of the invention in its different embodiments. The invention is not limited to the embodiments described. The invention may be varied within the scope of the claims and taking into account the knowledge of a person skilled in the relevant art.

[0195] List of Reference Numerals

[0196] 100 SEM

[0197] 101 Electron Source

[0198] 102 Extraction electrode

[0199] 103 Anode

[0200] 104 Beam guide tube

[0201] 105 First Converging Lens

[0202] 106 Second converging lens

[0203] 107 First Objective

[0204] 108 First baffle unit

[0205] 108A First baffle opening

[0206] 109 Second baffle unit

[0207] 110 pole shoes

[0208] 111 Coil

[0209] 112 Individual electrodes

[0210] 113 Tubular Electrode

[0211] 114 Object Holder

[0212] 115 Scanning Device

[0213] 116 First Detector

[0214] 116A Reverse Field Grid

[0215] 117 Second Detector

[0216] 118 Second baffle opening

[0217] 119 Sample Chamber Detector

[0218] 120 Sample Room

[0219] 121 Third Detector

[0220] 122 Sample table

[0221] 123 Control Unit

[0222] 124 Monitor

[0223] 125 Objects

[0224] 126 Database

[0225] 127 processors

[0226] 200 combined equipment

[0227] 201 Sample Room

[0228] 300 Ionizing Radiation Equipment

[0229] 301 Ion Beam Generator

[0230] 302 Extraction electrodes in ion radiation equipment

[0231] 303 Converging lens

[0232] 304 Second objective lens

[0233] 306 Adjustable or selectable baffles

[0234] 307 first electrode assembly

[0235] 308 second electrode assembly

[0236] 400 Particle radiation device with corrector unit

[0237] 401 Particle Radiation Column

[0238] 402 Electron Source

[0239] 403 Extraction Electrode

[0240] 404 Anode

[0241] 405 First Electrostatic Lens

[0242] 406 Second electrostatic lens

[0243] 407 The third electrostatic lens

[0244] 408 Magnetic Deflection Unit

[0245] 409 First electrostatic beam deflection unit

[0246] 409A First Multipole Unit

[0247] 409B Second multipole unit

[0248] 410 Beam Deflection Device

[0249] 411A First magnetic sector

[0250] 411B Second magnetic sector

[0251] 411C Third magnetic sector

[0252] 411D Fourth magnetic sector

[0253] 411E Fifth Magnetic Sector

[0254] 411F Sixth magnetic sector

[0255] 411G Seventh magnetic sector

[0256] 413A First reflector electrode

[0257] 413B Second reflector electrode

[0258] 413C Third reflector electrode

[0259] 414 Electrostatic Mirror

[0260] 415 The fourth electrostatic lens

[0261] 416 Second electrostatic beam deflection unit

[0262] 416A Third multipole unit

[0263] 416B Fourth multipole unit

[0264] 417 Third electrostatic beam deflection unit

[0265] 418 Fifth Electrostatic Lens

[0266] 418A Fifth Multipole Unit

[0267] 418B Sixth multipole unit

[0268] 419 First Analytical Detector

[0269] 420 Beam guide tube

[0270] 421 Objective

[0271] 422 Magnetic Lens

[0272] 423 Sixth Electrostatic Lens

[0273] 424 Sample Station

[0274] 425 Objects

[0275] 426 Sample Room

[0276] 427 Detection beam path

[0277] 428 Second analysis detector

[0278] 429 Scanning Device

[0279] 432 Additional magnetic deflection elements

[0280] 500 Radiation Detector

[0281] 600 First motion unit

[0282] 601 Housing

[0283] 602 Second motion unit

[0284] 603 First Rotation Axis

[0285] 604 Third Movement Unit

[0286] 605 Fourth Movement Unit

[0287] 606 Fifth Movement Unit

[0288] 607 Second rotation axis

[0289] 608 Control Unit

[0290] 609 Holding Department

[0291] 700 Laser beam device

[0292] 701 first holding device

[0293] 702 second holding device

[0294] 703 Third holding device

[0295] 704 fourth holding device

[0296] 705 Mark

[0297] 706 Surface of the object holder (first holding device of the object holder)

[0298] 707 Object Surface

[0299] 708 Sub-blocks of objects

[0300] 709 First beam axis

[0301] 710 Second beam axis

[0302] 1000 Gas input device

[0303] 1001 Gas storage in the form of a precursor storage

[0304] 1002 Supply pipeline

[0305] 1003 Casing

[0306] 1004 Valve

[0307] 1005 Adjustment unit

[0308] 1006 Temperature measurement unit

[0309] 1007 Temperature setting unit

[0310] M1 Stepper Motor

[0311] M2 Second stepper motor

[0312] M3 third stepper motor

[0313] M4 fourth stepper motor

[0314] M5 fifth stepper motor

[0315] OA optical axis

[0316] OA1 First optical axis

[0317] OA2 Second optical axis

[0318] OA3 Third optical axis

[0319] S1 to S10 Method steps

Claims

1. A method for operating a radiation device (100, 200, 400), the radiation device comprising a particle radiation device (100, 200, 400) generating a particle beam, the method comprising the following steps: - generating at least one mark (705) on an object holder (114) using the particle beam, wherein: The particle beam has charged particles; - arranging at least one object (125, 425) on the object holder (114); - moving the object holder (114), wherein the movement of the object holder (114) comprises a translational movement of the object holder (114) along at least one axis and / or a rotation of the object holder (114) around at least one rotational axis (603, 607); - using the marking (705) to relatively position the particle beam with respect to the object (125, 425); and - processing, imaging and / or analyzing the object (125, 425) using the particle beam, For the relative positioning of the particle beam, the following steps are performed: - generating a reference image with the marker (705) by imaging the marker (705) using the interaction of the particle beam with the marker (705); - after the movement of the object holder, generating a further image with the marking (705) by re-imaging the marking (705) using the particle beam; - comparing the reference image with the marking (705) with the further image with the marking (705); - determining a displacement vector by comparing the reference image with the marking (705) with the further image with the marking (705), wherein a relative positioning of the particle beam is performed using the displacement vector.

2. The method according to claim 1, wherein: An object holder (114) is used as the object holder (114) which is suitable for delivering an inspection particle beam with particles transmitted through the object (125, 425).

3. The method according to claim 1, wherein: The object (125, 425) is produced by means of the particle beam before the object (125, 425) is arranged on the object holder (114).

4. The method according to claim 1, wherein: - the object (125, 425) is arranged on the object holder (114) such that a surface (707) of the object (125, 425) is arranged at an angle of 0° to 360° relative to a surface (706) of the object holder (114, 701) which is freely accessible to the particle beam, and wherein - Producing the marking (705) on the surface of the object holder (114, 701).

5. The method according to claim 4, wherein: This method has one of the following characteristics: (i) a surface (707) of the object (125, 425) is arranged parallel to a surface (706) of the object holder (114, 701) which is freely accessible to the particle beam; (ii) The surface (707) of the object (125, 425) is arranged at an angle of 5° to 80° relative to the surface (706) of the object holder (114, 701) that is freely accessible to the particle beam.

6. The method according to claim 4, wherein: Before producing the marking (705) on the surface of the object holder (114), the surface (706) of the object holder (114) is produced using the particle beam.

7. The method according to claim 1, wherein: This method has one of the following characteristics: (i) the particle beam has a predeterminable beam flow, wherein not only the further image with the marking (705) is generated but also the processing, imaging and / or analysis of the object (125, 425) is carried out using the particle beam with the predeterminable beam flow; (ii) the particle beam has a predeterminable beam flow, wherein generating a reference image having the marking (705), generating a further image having the marking (705), and processing, imaging and / or analyzing the object (125, 425) are performed using the particle beam having the predeterminable beam flow.

8. The method according to claim 1, wherein: This method has one of the following characteristics: (i) the particle beam has a first, predeterminable beam flow and a second, predeterminable beam flow, wherein the generation of the further image having the marking (705) is carried out using the particle beam having the first, predeterminable beam flow, and wherein the processing, imaging and / or analysis of the object (125, 425) is carried out using the particle beam having the second, predeterminable beam flow; (ii) the particle beam has a first predeterminable beam flow and a second predeterminable beam flow, wherein a reference image having the mark (705) is generated using the particle beam having the first predeterminable beam flow, wherein a further image having the mark (705) is generated using the particle beam having the first predeterminable beam flow, and wherein processing, imaging and / or analysis of the object (125, 425) is performed using the particle beam having the second predeterminable beam flow.

9. The method according to claim 1, wherein: The method has at least one of the following characteristics: (i) processing the object (125, 425) includes grinding the material of the object (125, 425); (ii) processing the object (125, 425) includes arranging a material on the object (125, 425); (iii) Analysis of the object (125, 425) comprises analysis by means of energy dispersive X-ray spectroscopy and / or by means of wavelength dispersive X-ray spectroscopy and / or by means of electron backscatter diffraction and / or by means of transmission Kikuchi diffraction and / or by means of electron beam imaging and / or by means of use of a transmission detector (121).

10. The method according to claim 1, wherein the method has one of the following features: (i) the charged particles are ions; (ii) The charged particle is an electron.

11. The method according to any one of claims 1 to 9, characterized in that: (i) the particle beam is a first particle beam capable of producing at least one marking, wherein, The object is imaged (125, 425) using a second particle beam.

12. The method according to any one of claims 1 to 9, characterized in that: (ii) the particle beam is a first particle beam capable of producing at least one marking, wherein, The charged particles of the first particle beam include ions, and the object (125, 425) is imaged using a second particle beam, wherein the second particle beam includes electrons.

13. The method according to claim 11, wherein: For the relative positioning of the particle beam, the following steps are performed: - generating a further reference image with the marking (705) by imaging the marking (705) using the second particle beam; - generating a further image with the marking (705) by re-imaging the marking (705) using the second particle beam; - comparing the further reference image having the marking (705) with the still further image having the marking (705); - determining a further displacement vector by comparing the further reference image with the marking (705) with the still further image with the marking (705), wherein a relative positioning of the particle beam is performed using the further displacement vector.

14. The method according to claim 1, wherein the method has at least one of the following features: (i) generating the mark (705) as a mark having at least one edge, wherein: A first plane extends from the edge in a first dimension and a second plane extends from the edge in a second dimension; (ii) generating the marking (705) as a marking having at least one first edge and at least one second edge, wherein a first plane in a first dimension and a second plane in a second dimension extend both from the first edge and from the second edge, wherein in each case two first planes are different from one another and wherein in each case two second planes are different from one another; (iii) the mark (705) is generated as a cross mark and / or a polygon; (iv) the mark (705) is generated as a star mark; (v) the mark (705) is generated as an X-shaped mark; (vi) the mark (705) is generated as an L-shaped mark; (vii) The marking (705) is produced by abrading material and / or by applying material.

15. A method for operating a radiation device (100, 200, 400), the radiation device comprising a laser beam device (700) for generating a laser beam and a particle radiation device (100, 200, 400) for generating a particle beam, the method comprising the following steps: - generating at least one mark (705) on an object holder (114) using the laser beam and / or the particle beam, wherein: The particle beam has charged particles; - arranging at least one object (125, 425) on the object holder (114); - moving the object holder (114), wherein the movement of the object holder (114) comprises a translational movement of the object holder (114) along at least one axis and / or a rotation of the object holder (114) around at least one rotational axis (603, 607); - using the marking (705) to relatively position the particle beam and / or the laser beam relative to the object (125, 425); and - processing, imaging and / or analyzing the object (125, 425) using the particle beam and / or processing and / or analyzing the object (125, 425) using the laser beam, Therein, for the relative positioning of the particle beam and / or the laser beam, the following steps are performed: - generating a reference image with the marker (705) by imaging the marker (705) using the interaction of the particle beam with the marker (705); - after the movement of the object holder, generating a further image with the marking (705) by re-imaging the marking (705) using the particle beam; - comparing the reference image with the marking (705) with the further image with the marking (705); - determining a displacement vector by comparing the reference image with the marking (705) with the further image with the marking (705), wherein a relative positioning of the particle beam and / or the laser beam is carried out using the displacement vector.

16. The method according to claim 15, wherein: An object holder (114) is used as the object holder (114) which is suitable for delivering an inspection particle beam with particles transmitted through the object (125, 425).

17. The method according to claim 15, wherein: The object (125, 425) is produced by means of the particle beam and / or the laser beam before the object (125, 425) is arranged on the object holder (114).

18. The method according to claim 15, wherein: - the object (125, 425) is arranged on the object holder (114) such that a surface (707) of the object (125, 425) is arranged at an angle of 0° to 360° relative to a surface (706) of the object holder (114, 701) which is freely accessible to the particle beam and / or to the laser beam, and wherein: - Producing the marking (705) on the surface of the object holder (114, 701).

19. The method according to claim 18, wherein: This method has one of the following characteristics: (i) a surface (707) of the object (125, 425) is arranged parallel to a surface (706) of the object holder (114, 701) which is freely accessible to the particle beam and / or to the laser beam; (ii) The surface (707) of the object (125, 425) is arranged at an angle of 5° to 80° relative to the surface (706) of the object holder (114, 701) that is freely accessible to the particle beam and / or to the laser beam.

20. The method according to claim 18, wherein: Before the marking (705) is produced on the surface of the object holder (114), the surface (706) of the object holder (114) is produced using the particle beam and / or the laser beam.

21. The method according to claim 15, wherein: This method has one of the following characteristics: (i) the particle beam has a predeterminable beam flow, wherein not only the further image with the marking (705) is generated but also the processing, imaging and / or analysis of the object (125, 425) is carried out using the particle beam with the predeterminable beam flow; (ii) the particle beam has a predeterminable beam flow, wherein generating a reference image having the marking (705), generating a further image having the marking (705), and processing, imaging and / or analyzing the object (125, 425) are performed using the particle beam having the predeterminable beam flow.

22. The method according to claim 15, wherein: This method has one of the following characteristics: (i) the particle beam has a first, predeterminable beam flow and a second, predeterminable beam flow, wherein the generation of the further image having the marking (705) is carried out using the particle beam having the first, predeterminable beam flow, and wherein the processing, imaging and / or analysis of the object (125, 425) is carried out using the particle beam having the second, predeterminable beam flow; (ii) the particle beam has a first predeterminable beam flow and a second predeterminable beam flow, wherein a reference image having the mark (705) is generated using the particle beam having the first predeterminable beam flow, wherein a further image having the mark (705) is generated using the particle beam having the first predeterminable beam flow, and wherein processing, imaging and / or analysis of the object (125, 425) is performed using the particle beam having the second predeterminable beam flow.

23. The method according to claim 15, wherein: The method has at least one of the following characteristics: (i) processing the object (125, 425) includes grinding the material of the object (125, 425); (ii) processing the object (125, 425) includes arranging a material on the object (125, 425); (iii) Analysis of the object (125, 425) comprises analysis by means of energy dispersive X-ray spectroscopy and / or by means of wavelength dispersive X-ray spectroscopy and / or by means of electron backscatter diffraction and / or by means of transmission Kikuchi diffraction and / or by means of electron beam imaging and / or by means of use of a transmission detector (121).

24. The method according to claim 15, wherein the method has one of the following features: (i) the charged particles are ions; (ii) The charged particle is an electron.

25. The method according to any one of claims 15 to 23, characterized in that: (i) the particle beam is a first particle beam capable of producing at least one marking, wherein, The object is imaged (125, 425) using a second particle beam.

26. The method according to any one of claims 15 to 23, characterized in that: (ii) the particle beam is a first particle beam capable of producing at least one marking, wherein, The charged particles of the first particle beam include ions, and the object (125, 425) is imaged using a second particle beam, wherein the second particle beam includes electrons.

27. The method according to claim 25, wherein: For the relative positioning of the particle beam and / or the laser beam, the following steps are carried out: - generating a further reference image with the marking (705) by imaging the marking (705) using the second particle beam; - generating a further image with the marking (705) by re-imaging the marking (705) using the second particle beam; - comparing the further reference image having the marking (705) with the still further image having the marking (705); - determining a further displacement vector by comparing the further reference image with the marking (705) with the still further image with the marking (705), wherein a relative positioning of the particle beam and / or the laser beam is carried out using the further displacement vector.

28. The method according to claim 15, wherein the method has at least one of the following features: (i) generating the mark (705) as a mark having at least one edge, wherein: A first plane extends from the edge in a first dimension and a second plane extends from the edge in a second dimension; (ii) generating the marking (705) as a marking having at least one first edge and at least one second edge, wherein a first plane in a first dimension and a second plane in a second dimension extend both from the first edge and from the second edge, wherein in each case two first planes are different from one another and wherein in each case two second planes are different from one another; (iii) the mark (705) is generated as a cross mark and / or a polygon; (iv) the mark (705) is generated as a star mark; (v) the mark (705) is generated as an X-shaped mark; (vi) the mark (705) is generated as an L-shaped mark; (vii) The marking (705) is produced by abrading material and / or by applying material.

29. A computer program product having a program code which can be loaded into a processor (127) and which, when executed, controls a radiation device (100, 200, 400) such that the method according to any one of claims 1 to 14 is carried out.

30. A computer program product having a program code which can be loaded into a processor (127) and which, when executed, controls a radiation device (100, 200, 400) such that the method according to any one of claims 15 to 28 is carried out.

31. A radiation device (100, 200, 400) for processing, imaging and / or analyzing an object (125, 425), the radiation device having - at least one beam generator (101, 301, 402, 700) for generating a particle beam having charged particles; - at least one object holder (114) for arranging the object (125, 425); - at least one scanning device (115, 307, 308, 429) for scanning the particle beam over the object (125, 425); at least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interacting particles and / or interacting radiation generated by the interaction of the particle beam with the object (125, 425), - at least one display device (124) for displaying images and / or analyzing the object (125, 425) and having - at least one control unit (123) having a processor (127) into which the computer program product according to claim 29 is loaded.

32. A radiation device (100, 200, 400) for processing, imaging and / or analyzing an object (125, 425), the radiation device having - at least one beam generator (101, 301, 402, 700) for generating a particle beam with charged particles and a laser beam; - at least one object holder (114) for arranging the object (125, 425); at least one scanning device (115, 307, 308, 429) for scanning the particle beam and / or the laser beam over the object (125, 425); at least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interacting particles and / or interacting radiation generated by the interaction of the particle beam and / or the laser beam with the object (125, 425), - at least one display device (124) for displaying images and / or analyzing the object (125, 425) and having - at least one control unit (123) having a processor (127) into which the computer program product according to claim 30 is loaded.

33. The radiation device (100, 200, 400) according to claim 31 or 32, wherein: The radiation device (100, 200, 400) is a particle radiation device, and the particle radiation device (100, 200, 400) has at least one objective lens (107, 304, 421) for focusing the particle beam onto the object (125, 425).

34. The radiation device (200) according to claim 33, wherein The beam generator (101) is designed as a first beam generator, and the particle beam is designed as a first particle beam having first charged particles, wherein the objective lens (107) is designed as a first objective lens for focusing the first particle beam onto the object (125), and wherein the particle radiation device (200) further comprises: - at least one second beam generator (301) for generating a second particle beam having second charged particles; and - at least one second objective lens (304) for focusing the second particle beam onto the object (125).

35. The radiation device (100, 200, 400) according to claim 33, wherein The particle irradiation device (100, 200, 400) is an electron irradiation device and / or an ion irradiation device.

Images