Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method capable of suppressing dew condensation on a substrate are provided. The substrate processing apparatus includes: a stage configured to be rotatable; a plurality of holding portions provided on one side of the stage and holding a substrate; a liquid supply portion that supplies a liquid having a temperature higher than a freezing point to a surface of the substrate on an opposite side of the stage; a cooling portion that supplies a cooling gas to a space between the stage and the substrate; a moving portion that changes a distance between the stage and the substrate held by the plurality of holding portions; and a controller that controls the cooling portion and the moving portion. The controller performs a cooling process and a thawing process. In the cooling process, the distance is made a first distance by controlling the moving portion. In the thawing process, the distance is made a second distance longer than the first distance by controlling the moving portion.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to a substrate processing apparatus and a substrate processing method. BACKGROUND

[0002] In a microstructure such as a template for imprinting, a mask substrate for lithography, and a semiconductor wafer, a fine concavo-convex portion is formed on the surface of a substrate.

[0003] Here, as a method of removing contaminants such as particles adhering to the surface of a substrate, an ultrasonic cleaning method, a two-fluid jet cleaning method, and the like are known. However, if an ultrasonic wave is applied to a substrate or a fluid is jetted to the surface of a substrate, the fine concavo-convex portion formed on the surface of the substrate can be damaged. In recent years, the fine concavo-convex portion has been made finer, and the fine concavo-convex portion has become more likely to be damaged.

[0004] Therefore, as a method of removing contaminants adhering to the surface of a substrate, a freeze cleaning method has been proposed.

[0005] In the freeze cleaning method, the surface of a substrate is cleaned as follows. First, pure water is supplied to the surface of a substrate that is being rotated, and a portion of the supplied pure water is discharged to form a water film on the surface of the substrate. Next, a cooling gas is supplied to the substrate on which the water film is formed to freeze the water film. When the water film is frozen to form an ice film, contaminants enter the ice film, and thus the contaminants are separated from the surface of the substrate. Next, pure water is supplied to the ice film to melt the ice film, and the contaminants are removed from the surface of the substrate together with the pure water. Next, the substrate from which the contaminants have been removed is rotated, and thus the substrate is dried.

[0006] Here, when the water film is frozen, if the cooling gas is supplied to the side of the substrate on which the water film is formed, freezing starts from the surface side of the water film (the side opposite to the substrate side of the water film). If freezing starts from the surface side of the water film, it is difficult to separate impurities adhering to the surface of the substrate from the surface of the substrate. Therefore, a technique of supplying the cooling gas to the side opposite to the side of the substrate on which the water film is formed has been proposed (for example, see Patent Literature 1).

[0007] However, if the cooling gas is supplied to the side opposite to the side of the substrate on which the water film is formed in the process of forming the ice film, a placement table on which the substrate is placed is also cooled by the cooling gas. In the process of melting the ice film or the process of drying the substrate, which are performed after the process of forming the ice film, the supply of the cooling gas is stopped, but the temperature of the placement table is maintained at a low temperature for a certain period of time. In the process of melting the ice film or the process of drying the substrate, if the temperature of the placement table is low, the amount of heat transferred from the substrate to the placement table by radiation increases, and the substrate can be cooled.

[0008] In addition, it is also possible that the air around the placement table is cooled by the placement table, and the substrate is cooled by the cooled air.

[0009] If the substrate is cooled, dew condensation occurs on the surface or the back surface of the substrate, and it is possible that contamination or water marks, etc. are generated.

[0010] Therefore, it is desirable to develop a technology capable of suppressing dew condensation on a substrate.

[0011] Patent Literature

[0012] Patent Literature 1: Japanese Patent Application Laid-Open No. 2018-026436 SUMMARY

[0013] The technology problem to be solved by the present application is to provide a substrate processing apparatus and a substrate processing method capable of suppressing dew condensation on a substrate.

[0014] The substrate processing apparatus according to the embodiment includes: a placement table configured to be rotatable; a plurality of holding portions provided on one side of the placement table and holding a substrate; a liquid supply portion that supplies a liquid having a temperature higher than a freezing point to a surface opposite to the placement table side of the substrate; a cooling portion that supplies a cooling gas to a space between the placement table and the substrate; a moving portion that changes a distance between the placement table and the substrate held by the plurality of holding portions; and a controller that controls the cooling portion and the moving portion. The controller executes: a cooling process including a supercooling process of at least causing the liquid on the substrate to be in a supercooled state from a temperature higher than the freezing point and a freezing process (solid-liquid phase) between the supercooled state and a freezing end; and a thawing process after the cooling process, in which the distance is made a first distance by controlling the moving portion in the cooling process, and the distance is made a second distance longer than the first distance by controlling the moving portion in the thawing process.

[0015] According to the embodiment of the present application, a substrate processing apparatus and a substrate processing method capable of suppressing dew condensation on a substrate are provided. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a mode diagram for illustrating a substrate processing apparatus according to the embodiment.

[0017] Figure 2 is a mode diagram for illustrating a raised state of a susceptor.

[0018] Figure 3 is a mode diagram for illustrating a lowered state of a susceptor.

[0019] Figure 4 is a time chart for illustrating an operation of a substrate processing apparatus.

[0020] Figure 5 is a graph for illustrating temperature change in a freezing cleaning process.

[0021] Figure 6 is a mode diagram for illustrating a moving section involved in another embodiment.

[0022] Figure 7 is a mode diagram for illustrating a moving section involved in another embodiment.

[0023] Figure 8 is a mode diagram for illustrating a holding section involved in another embodiment.

[0024] Figure 9 is a mode diagram for illustrating a liquid-repellent section involved in another embodiment.

[0025] Symbol explanation

[0026] 1 - substrate processing apparatus; 2 - placement section; 2a - placement table; 2a1 - holding section; 3 - cooling section; 3a1 - cooling gas; 4 - 1st liquid supply section; 5 - 2nd liquid supply section; 6 - frame; 7 - air supply section; 8 - exhaust section; 9 - moving section; 9a - support section; 9a1 - base; 9a2 - support pillar; 9b - lifting section; 9b1 - base; 9b2 - driving section; 10 - controller; 19 - moving section; 19b - lifting section; 29 - moving section; 29b - lifting section; 29b1 - base; 29b1a - root; 29b1b - support member; 100 - substrate; 101 - liquid; 102 - liquid. DETAILED DESCRIPTION

[0027] Hereinafter, embodiments will be illustrated with reference to the drawings. Also, in each drawing, the same reference signs are attached to the same constituent elements and detailed description is appropriately omitted.

[0028] The substrate 100 illustrated below can be, for example, a plate-like body for a semiconductor wafer, a template for imprint, a mask substrate for photolithography, a MEMS (Micro Electro Mechanical Systems), or the like.

[0029] However, the use of the substrate 100 is not limited thereto.

[0030] Figure 1 is a mode diagram for illustrating a substrate processing apparatus 1 involved in the present embodiment.

[0031] As shown in Figure 1 , the substrate processing apparatus 1 is provided with a placement section 2, a cooling section 3, a 1st liquid supply section 4, a 2nd liquid supply section 5, a frame 6, an air supply section 7, an exhaust section 8, a moving section 9, and a controller 10.

[0032] The placement unit 2 has a placement table 2a, a rotating shaft 2b, and a driving unit 2c.

[0033] The placement table 2a is rotatably provided inside the frame 6. The placement table 2a is in a plate shape. A plurality of holding portions 2al that hold the substrate 100 are provided on one main surface of the placement table 2a. When the substrate 100 is held by the plurality of holding portions 2al, the surface 100b (the surface of the side on which cleaning is performed) of the substrate 100 faces the opposite side to the placement table 2a side.

[0034] On at least any one of the surface of the placement table 2a and the placement table 2a side of the holding portion 2al, a liquid-repellent film (corresponding to one example of the first liquid-repellent portion) can be provided. The liquid-repellent film has a property (liquid repellency) of more easily repelling the liquid 101 than the placement table 2a. The liquid-repellent film can contain, for example, a material having a functional group such as a saturated fluoroalkyl group, a fluoro silane group, an alkyl silane group, a long-chain alkyl group, or a trifluoromethyl group. For example, the liquid-repellent film can be formed by coating a fluororesin on the surface of the placement table 2a (for example, refer to Patent Document 1). Figure 8

[0035] One end portion of the rotating shaft 2b is fitted into the hole 2a2 of the placement table 2a. The other end portion of the rotating shaft 2b is provided outside the frame 6. The rotating shaft 2b is connected to the driving unit 2c outside the frame 6.

[0036] The rotating shaft 2b is in a cylindrical shape. The blowing portion 2bl is provided at the end portion of the rotating shaft 2b on the placement table 2a side. The blowing portion 2bl is opened on the surface of the placement table 2a on the substrate 100 side. The end portion of the blowing portion 2bl on the opening side is connected to the inner wall of the hole 2a2. The opening of the blowing portion 2bl opposes the back surface 100a of the substrate 100 placed on the placement table 2a.

[0037] Also, although the case where the blowing portion 2bl is provided at the top end of the rotating shaft 2b is illustrated, the blowing portion 2bl can also be provided at the top end of the cooling nozzle 3d described later. In addition, the hole 2a2 of the placement table 2a can also be used as the blowing portion 2bl.

[0038] The end portion of the rotating shaft 2b on the opposite side to the placement table 2a side is closed. The cooling nozzle 3d is inserted into the end portion of the rotating shaft 2b on the opposite side to the placement table 2a side. A not-shown rotating shaft seal is provided between the end portion of the rotating shaft 2b on the opposite side to the placement table 2a side and the cooling nozzle 3d.

[0039] ​The driving section 2c is provided outside the frame 6. The driving section 2c is connected to the rotating shaft 2b. In addition, the driving section 2c is fixed to the frame 6. The driving section 2c can have a rotating machine such as a motor. The rotating force of the driving section 2c is transmitted to the placement table 2a via the rotating shaft 2b. Therefore, the placement table 2a can be rotated by the driving section 2c, so that the substrate 100 placed on the placement table 2a can be rotated.

[0040] In addition, the driving section 2c can not only achieve rotation start and rotation stop, but also can change the rotation speed (rotational speed). The driving section 2c can have, for example, a control motor such as a servo motor.

[0041] The cooling section 3 supplies the cooling gas 3al to the space between the placement table 2a and the substrate 100.

[0042] The cooling section 3 has a cooling liquid section 3a, a filter 3b, a flow control section 3c, and a cooling nozzle 3d. The cooling liquid section 3a, the filter 3b, and the flow control section 3c are provided outside the frame 6.

[0043] The cooling liquid section 3a accommodates a cooling liquid and generates the cooling gas 3al. The cooling liquid is a liquefied product of the cooling gas 3al. The cooling gas 3al is not particularly limited as long as the cooling gas 3al is a gas that is difficult to react with the material of the substrate 100. The cooling gas 3al can be, for example, an inert gas such as nitrogen, helium, or argon. At this time, if a gas having a high specific heat is used, the cooling time of the substrate 100 can be shortened. For example, if helium is used, the cooling time of the substrate 100 can be shortened. In addition, if nitrogen is used, the processing cost of the substrate 100 can be reduced.

[0044] The cooling liquid section 3a has a liquid tank that accommodates a cooling liquid and a gasification section that gasifies the cooling liquid accommodated in the liquid tank. A cooling device for maintaining the temperature of the cooling liquid is provided in the liquid tank. The gasification section generates the cooling gas 3al from the cooling liquid by increasing the temperature of the cooling liquid. Since the inside of the liquid tank is filled with the cooling liquid and the cooling gas 3al, the cooling gas 3al is a gas that does not contain moisture. The temperature of the cooling gas 3al is a temperature that can cool the liquid 101 to a temperature below the freezing point so as to be in a supercooled state. Therefore, the temperature of the cooling gas 3al can be a temperature below the freezing point of the liquid 101. The temperature of the cooling gas 3al can be, for example, -170°C.

[0045] The filter 3b is connected to the cooling liquid section 3a via a pipe. The filter 3b suppresses the outflow of contaminants such as particles contained in the cooling liquid to the substrate 100 side.

[0046] The flow control section 3c is connected to the filter 3b via a pipe. The flow control section 3c controls the flow rate of the cooling gas 3al. The temperature of the cooling gas 3al generated from the cooling liquid in the cooling liquid section 3a becomes a substantially prescribed temperature. Therefore, the flow control section 3c can control the temperature of the substrate 100 by controlling the flow rate of the cooling gas 3al, so that the temperature of the liquid 101 on the substrate 100 can be controlled.

[0047] The flow control section 3c can be, for example, a MFC (Mass Flow Controller) or the like. In addition, the flow control section 3c can also indirectly control the flow rate of the cooling gas 3al by controlling the supply pressure of the cooling gas 3al. At this time, the flow control section 3c can be, for example, an APC (Auto Pressure Controller) or the like.

[0048] The cooling nozzle 3d is in a cylindrical shape. One end of the cooling nozzle 3d is connected to the flow control section 3c. The other end of the cooling nozzle 3d is provided inside the rotary shaft 2b. The cooling nozzle 3d supplies the cooling gas 3al whose flow rate is controlled by the flow control section 3c to the substrate 100. The cooling gas 3al ejected from the cooling nozzle 3d is directly supplied to the surface opposite to the surface to which the liquid 101 is supplied via the blowout section 2bl.

[0049] The first liquid supply section 4 supplies the liquid 101 to the surface (surface 100b) opposite to the side of the placement table 2a of the substrate 100. The liquid 101 can be, for example, water (for example, pure water or ultrapure water, or the like) or a liquid in which water is a main component, or the like. The liquid in which water is a main component can be, for example, a mixed liquid of water and alcohol, a mixed liquid of water and an acidic solution, a mixed liquid of water and an alkaline solution, or the like. At this time, if the component other than water is too much, it is difficult to utilize the physical force which increases the volume as described later. Therefore, it is preferable that the concentration of the component other than water be 5 wt% or more and 30 wt% or less. In addition, a gas can also be dissolved in the liquid 101. The gas can be, for example, carbonic acid gas, ozone gas, hydrogen gas, or the like. The temperature of the liquid 101 can be, for example, around room temperature (20°C).

[0050] The first liquid supply section 4 has a liquid storage section 4a, a supply section 4b, a flow control section 4c, and a liquid nozzle 4d. The liquid storage section 4a, the supply section 4b, and the flow control section 4c are provided outside the frame 6.

[0051] The liquid storage section 4a stores the liquid 101.

[0052] The supply section 4b is connected to the liquid storage section 4a via a pipe. The supply section 4b supplies the liquid 101 stored in the liquid storage section 4a to the liquid nozzle 4d.

[0053] The flow rate control section 4c is connected to the supply section 4b via a pipe. The flow rate control section 4c controls the flow rate of the liquid 101 supplied from the supply section 4b. The flow rate control section 4c can be, for example, a flow rate control valve. In addition, the flow rate control section 4c can also perform start and stop of supply of the liquid 101.

[0054] The liquid nozzle 4d is provided inside the frame 6. The liquid nozzle 4d is in a cylindrical shape. One end of the liquid nozzle 4d is connected to the flow rate control section 4c via a pipe. The other end of the liquid nozzle 4d opposes the surface 100b of the substrate 100 placed on the placement table 2a. In addition, the other end of the liquid nozzle 4d (liquid 101 discharge port) is positioned at substantially the center of the surface 100b of the substrate 100.

[0055] The second liquid supply section 5 supplies a liquid 102 to the surface 100b of the substrate 100. The liquid 102 is used in the thawing process described later. Therefore, the liquid 102 is not particularly limited as long as it is difficult to react with the material of the substrate 100 and difficult to remain on the substrate 100 in the drying process described later. The liquid 102 can be, for example, water (e.g., pure water or ultrapure water, etc.) or a mixture of water and alcohol, etc.

[0056] The second liquid supply section 5 has a liquid storage section 5a, a supply section 5b, a flow rate control section 5c, and the liquid nozzle 4d.

[0057] The liquid storage section 5a can be the same as the liquid storage section 4a described above. The supply section 5b can be the same as the supply section 4b described above. The flow rate control section 5c can be the same as the flow rate control section 4c described above.

[0058] In addition, although a case in which the liquid nozzle 4d is used for both liquids 101 and 102 is illustrated, a liquid nozzle that discharges the liquid 101 and a liquid nozzle that discharges the liquid 102 can be separately provided. The temperature of the liquid 102 can be, for example, room temperature (20°C) or the like.

[0059] The frame 6 is in a box shape. A cover 6a is provided inside the frame 6. The cover 6a blocks the liquid 101 (102) supplied to the substrate 100 and discharged to the outside of the substrate 100 due to rotation of the substrate 100. In addition, a partition 6b is provided inside the frame 6. The partition 6b is provided between the outside of the cover 6a and the inside of the frame 6.

[0060] An exhaust port 6c is provided on the side surface of the bottom surface side of the frame 6. The used cooling gas 3a1, the air 7a, and the liquid 101 (102) are discharged to the outside of the frame 6 from the exhaust port 6c. An exhaust pipe 6c1 is connected to the exhaust port 6c, and an exhaust unit (pump) 8 that discharges the used cooling gas 3a1 and the air 7a is connected to the exhaust pipe 6c1. In addition, a discharge pipe 6c2 that discharges the liquid 101 (102) is connected to the exhaust port 6c.

[0061] The air supply unit 7 is provided on the top surface of the frame 6. Also, the air supply unit 7 can be provided on the side surface of the top side of the frame 6. The air supply unit 7 can be provided with an air blower such as a fan and a filter. The air supply unit 7 supplies the air 7a (external air) to the space between the partition 6b and the top of the frame 6. Therefore, the pressure of the space between the partition 6b and the top of the frame 6 is higher than the external pressure. As a result, the air 7a supplied from the air supply unit 7 is easily guided to the exhaust port 6c. In addition, it is possible to suppress the intrusion of contaminants such as particles into the inside of the frame 6 from the exhaust port 6c.

[0062] The moving unit 9 moves the positions of the plurality of holding units 2a1 with respect to the placement table 2a, so as to move the position of the substrate 100 with respect to the placement table 2a. That is, the moving unit 9 changes the distance between the placement table 2a and the substrate 100 held by the plurality of holding units 2a1.

[0063] The moving unit 9 can have a support unit 9a and a lifting unit 9b.

[0064] The support unit 9a can be provided inside the frame 6. The plurality of holding units 2a1 are provided on the support unit 9a.

[0065] The support unit 9a can have a base 9a1 (corresponding to one example of the first base) and a support pillar 9a2.

[0066] The base 9a1 is, for example, annular, and can be provided on the side opposite to the side on which the plurality of holding units 2a1 are provided on the placement table 2a. It is possible to provide the base 9a1 so as to be substantially parallel to the placement table 2a. For example, in the central region of the base 9a1, a hole that penetrates the base 9a1 in the thickness direction, the rotary shaft 2b is provided with a prescribed gap. Also, although the annular base 9a1 is illustrated, the shape of the base 9a1 is not limited thereto. For example, the hole that penetrates the base 9a1 in the thickness direction can also be opened on the side surface of the base 9a1. For example, the planar shape of the base 9a1 can also be C-shaped or U-shaped, or the like. As long as the base 9a1 is provided outside the rotary shaft 2b with a prescribed gap.

[0067] The base 9a1 can have magnetic properties. At least the portion of the base 9a1 on the side opposite to the placement table 2a side has magnetic properties. At this time, either a permanent magnet can be provided on the portion of the base 9a1 on the side opposite to the placement table 2a side, or the base 9a1 can be magnetized.

[0068] The support 9a2 can be provided in the plurality of holding portions 2al, respectively. The support 9a2 is columnar, and one end portion is connected to the holding portion 2al, and the other end portion is connected to the base 9al. The support 9a2 is provided so as to be movable in the thickness direction of the placement table 2a. For example, the support 9a2 can be provided inside a hole, a groove, a cutout, or the like that penetrates the placement table 2a in the thickness direction. It is possible to make the length dimension of the support 9a2 larger than the thickness dimension of the placement table 2a. For example, as shown in FIG. 2, when the holding portion 2al contacts the placement table 2a, it is possible to form a prescribed gap between the placement table 2a and the base 9al. In this way, it is possible to move the positions of the plurality of holding portions 2al in the lifting direction, so as to move the position of the substrate 100 held by the plurality of holding portions 2al. Figure 1

[0069] The lifting portion 9b moves the position of the support portion 9a in the lifting direction, so as to move the position of the substrate 100 held by the plurality of holding portions 2al.

[0070] The lifting portion 9b, for example, can have a base 9bl (corresponding to one example of a second base), and a driving portion 9b2.

[0071] The base 9bl can be provided inside the frame 6. The base 9bl, for example, is annular, and is opposed to the base 9al via a prescribed gap. It is possible to provide the base 9bl so as to be substantially parallel to the base 9al. For example, in the central region of the base 9bl, a hole that penetrates the base 9bl in the thickness direction is provided with the rotating shaft 2b via a prescribed gap. Also, although an annular base 9bl is illustrated, the shape of the base 9bl is not limited thereto. For example, the hole that penetrates the base 9bl in the thickness direction can also be open on the side surface of the base 9bl. For example, the planar shape of the base 9bl can also be C-shaped or U-shaped, or the like. As long as the base 9bl is provided outside the rotating shaft 2b via a prescribed gap, the planar shape and the planar dimension of the base 9bl can be the same as, or different from, the planar shape and the planar dimension of the base 9al.

[0072] The lifting portion 9b is linked to the support portion 9a by a repulsive force, and causes the support portion 9a to lift. Therefore, the base 9bl is opposed to the base 9al, and has the same polarity of magnetism as the base 9al. For example, at least the portion of the base 9bl on the side of the base 9al has magnetism. At this time, it is possible to provide a permanent magnet on the surface of the base 9bl on the side of the base 9al, or to magnetize the base 9bl. Also, the polarity of the portion of the base 9bl that has magnetism can be the same as the polarity of the portion of the base 9al that has magnetism. Therefore, a repulsive force is generated between the base 9bl and the base 9al.

[0073] ​The driving section 9b2 can be provided outside the frame 6. The driving section 9b2 moves the position of the base 9b1 in the lifting direction. The driving section 9b2 is not particularly limited as long as it can cause the base 9b1 to lift. The driving section 9b2 can have, for example, a cylinder, a servomotor, or the like, and a guide mechanism, or the like.

[0074] Figure 2 is a mode diagram for illustrating a lifted state of the base 9a1.

[0075] Figure 3 is a mode diagram for illustrating a lowered state of the base 9a1.

[0076] As described above, since the repulsive force is generated between the base 9b1 and the base 9a1, as Figure 2 illustrated, when the base 9b1 is lifted, the base 9a1 is lifted by being pressed by the base 9b1. When the base 9a1 is lifted, the substrate 100 held by the plurality of holding sections 2a1 is lifted, and the distance L1 between the substrate 100 and the placement table 2a becomes large. At this time, as Figure 2 illustrated, if the base 9a1 is brought into contact with the placement table 2a, the distance L1 between the substrate 100 and the placement table 2a can be kept constant. Also, the placement table 2a is connected to the driving section 2c via the rotation shaft 2b. Also, as described above, the driving section 2c is fixed to the frame 6. Thus, the placement table 2a is rotatably fixed to the frame 6. That is, even if the base 9a1 comes into contact, the position of the placement table 2a does not change. Also, the placement table 2a is brought into contact with the base 9a1 in such a manner that the substrate 100 does not fall from the plurality of holding sections 2a1.

[0077] On the other hand, as Figure 3 illustrated, when the base 9b1 is lowered, the base 9a1 is lowered due to the weight. When the base 9a1 is lowered, the substrate 100 held by the plurality of holding sections 2a1 is lowered, and the distance L2 between the substrate 100 and the placement table 2a becomes small. At this time, as Figure 3 illustrated, if the plurality of holding sections 2a1 is brought into contact with the placement table 2a, the distance L2 between the substrate 100 and the placement table 2a can be kept constant. Also, as described above, the placement table 2a is rotatably fixed to the frame 6. Thus, even if the plurality of holding sections 2a1 comes into contact, the position of the placement table 2a does not change. Also, the placement table 2a is brought into contact with the plurality of holding sections 2a1 in such a manner that the substrate 100 does not fall from the plurality of holding sections 2a1.

[0078] Also, since the distance between the base 9b1 and the base 9a1 can be kept substantially constant by the repulsive force, the distance between the substrate 100 and the placement table 2a can also be adjusted by the position of the base 9b1.

[0079] The controller 10 controls the operation of each component provided in the substrate processing apparatus 1. The controller 10 may include, for example, a computing unit such as a CPU (Central Processing Unit) and a storage unit such as a semiconductor memory. The controller 10 may be, for example, a computer. The storage unit may store a control program for controlling the operation of each component provided in the substrate processing apparatus 1. The computing unit uses the control program stored in the storage unit, data input by the operator, and the like to control the operation of each component provided in the substrate processing apparatus 1.

[0080] For example, there is a correlation between the cooling rate of the liquid 101 and the thickness of the liquid film. For example, the thinner the thickness of the liquid film, the faster the cooling rate of the liquid 101. On the contrary, the thicker the thickness of the liquid film, the slower the cooling rate of the liquid 101. Therefore, the controller 10 controls the cooling unit 3 according to the thickness of the liquid 101 (the thickness of the liquid film), thereby controlling the flow rate of the cooling gas 3a1 and thus controlling the cooling rate of the liquid 101. At this time, the controller 10 controls the placement unit 2, the cooling unit 3, and the first liquid supply unit 4, thereby also controlling the rotation of the substrate 100, the flow rate of the cooling gas 3a1, and the supply amount of the liquid 101.

[0081] Furthermore, the controller 10 controls the placement unit 2 and the cooling unit 3 to supercool the liquid 101 on the surface 100b of the substrate 100. The supercooled liquid 101 is frozen to form a frozen film, which can be cracked by lowering the temperature of the frozen film. The formation and cracking of the frozen film will be described in detail later.

[0082] For example, the controller 10 controls the cooling unit 3 to switch between a first step of supplying the cooling gas 3 a 1 and a second step of stopping the supply of the cooling gas 3 a 1 .

[0083] Furthermore, the controller 10 can control the moving part 9 to set the distance between the placement table 2a and the substrate 100 held by the plurality of holding parts 2a1 to a first distance in the first step, and can control the moving part 9 to set the distance to a second distance longer than the first distance in the second step. Figure 3 The distance L2 shown. The second distance is, for example, Figure 2 The distance L1 is shown.

[0084] For example, in the preparation step, the liquid film forming step, and the cooling step described later, the substrate 100 held by the plurality of holding portions 2 a 1 is lowered to reduce the distance between the substrate 100 and the placement stage 2 a .

[0085] For example, in the thawing process and the drying process described later, the substrate 100 held by the plurality of holding portions 2al is lifted to increase the distance between the substrate 100 and the placement table 2a, thereby reducing the heat transferred from the substrate 100 to the placement table 2a by radiation. In addition, the substrate is suppressed from being cooled by the air cooled by the placement table.

[0086] Furthermore, the lifting position of the substrate 100 in each process and the effect thereof will be described later in detail.

[0087] Next, the substrate processing method according to the present embodiment will be exemplified together with the function of the substrate processing apparatus 1.

[0088] Figure 4 is a time chart for exemplifying the function of the substrate processing apparatus 1.

[0089] Figure 5 is a graph for exemplifying the temperature change in the freeze cleaning process.

[0090] Furthermore, the lifting position of the substrate 100 in each process and the effect thereof will be described later in detail. Figure 4 Figure 5 is a case where the substrate 100 is a 6025 quartz (Qz) substrate (152 mm x 152 mm x 6.35 mm) and the liquid 101 is pure water.

[0091] First, the substrate 100 is carried into the inside of the frame 6 by a not-shown carrying device via a not-shown carrying-in / out port of the frame 6. The carried-in substrate 100 is placed and held on the plurality of holding portions 2al of the placement table 2a.

[0092] At this time, the controller 10 controls the driving portion 9b2 to cause the susceptor 9bl to rise. Therefore, the plurality of holding portions 2al also rises. Thus, the distance between the substrate and the placement table 2a is, for example, the distance Ll (2nd distance) shown in Figure 2 .

[0093] The not-shown carrying device moves from the inside of the frame 6 to the outside of the frame 6 before the preparation process described later is performed. The distance between the substrate and the placement table 2a is maintained at the distance Ll during the movement of the not-shown carrying device to the outside of the frame 6 is completed. By maintaining the distance Ll, the heat transferred from the substrate 100 to the placement table 2a by radiation can be reduced. In addition, the substrate is suppressed from being cooled by the air cooled by the placement table.

[0094] After the substrate 100 is placed and held on the placement table 2a, the freeze cleaning process including the preparation process, the liquid film forming process, the cooling process, the thawing process, and the drying process is performed as shown in Figure 4 .

[0095] First, as shown in Figure 4 and Figure 5 ​The preparation process is executed as illustrated. In the preparation process, the controller 10 controls the drive section 9b2 to lower the base 9b1. When the base 9b1 is lowered, the base 9a1 is lowered and the substrate 100 held by the plurality of holding sections 2a1 is lowered. Thus, the distance between the substrate 100 and the placement table 2a becomes small. This distance is the distance L2 (1st distance) as illustrated. In this way, since the volume of the space in which the cooling gas 3a1 is supplied between the substrate 100 and the placement table 2a can be reduced, the cooling efficiency can be improved or the consumption amount of the cooling gas 3a1 can be reduced. For example, the distance between the substrate 100 and the placement table 2a can be about 1 mm to 5 mm. Figure 3 The distance L2 (1st distance) as illustrated. In this way, since the volume of the space in which the cooling gas 3a1 is supplied between the substrate 100 and the placement table 2a can be reduced, the cooling efficiency can be improved or the consumption amount of the cooling gas 3a1 can be reduced. For example, the distance between the substrate 100 and the placement table 2a can be about 1 mm to 5 mm.

[0096] In addition, the controller 10 controls the supply section 4b and the flow control section 4c to supply the liquid 101 of a prescribed flow rate to the surface 100b of the substrate 100. In addition, the controller 10 controls the flow control section 3c to supply the cooling gas 3a1 of a prescribed flow rate to the back surface 100a of the substrate 100. In addition, the controller 10 controls the drive section 2c to rotate the substrate 100 at the 2nd rotation speed.

[0097] Here, when the environment in the frame 6 is cooled due to the supply of the cooling gas 3a1 of the cooling section 3, frost containing dust in the environment adheres to the substrate 100, which can become a cause of contamination. In the preparation process, since the supply of the liquid 101 to the surface 100b of the substrate 100 is continued, the substrate 100 can be uniformly cooled while preventing frost from adhering to the surface 100b of the substrate 100. In addition, before the substrate 100 is cooled, the space between the substrate 100 and the placement table 2a is in a state of being filled with the cooling gas 3a1. The cooling gas 3a1 is a dry gas. Thus, frost is also prevented from adhering to the back surface 100a of the substrate.

[0098] Furthermore, if frost is prevented from adhering to the surface 100b of the substrate 100, the start of the supply of the liquid 101 and the supply of the cooling gas 3a1 can be performed at the same time as the lowering of the base 9b1, or can be performed before and after the lowering of the base 9b1. In addition, the start of the supply of the liquid 101 and the supply of the cooling gas 3a1 can be performed at different times.

[0099] For example, in the case illustrated, the 2nd rotation speed can be about 20 rpm to 500 rpm, the flow rate of the liquid 101 can be about 0.1 L / min to 1.0 L / min, the flow rate of the cooling gas 3a1 can be about 40 NL / min to 200 NL / min, and the process time of the preparation process can be about 1800 seconds. Figure 4 In the case illustrated, the 2nd rotation speed can be about 20 rpm to 500 rpm, the flow rate of the liquid 101 can be about 0.1 L / min to 1.0 L / min, the flow rate of the cooling gas 3a1 can be about 40 NL / min to 200 NL / min, and the process time of the preparation process can be about 1800 seconds.

[0100] In the preparation step, since the liquid 101 is continuously flowing, the temperature of the liquid film is substantially the same as the temperature of the supplied liquid 101. For example, when the temperature of the supplied liquid 101 is about room temperature (20°C), the temperature of the liquid film is about room temperature (20°C).

[0101] Next, the liquid film formation step is executed as shown in Figure 4 and Figure 5 In the liquid film formation step, the rotation speed of the substrate 100 is set to a rotation speed (first rotation speed) at which a liquid film thickness (predetermined thickness) at which a higher removal rate is obtained is formed. For example, the first rotation speed is 0 rpm to 100 rpm. That is, the controller 10 rotates the substrate 100 at a lower rotation speed than in the preparation step. Thereafter, as exemplified in Figure 4 the supplied liquid 101 in the preparation step is stopped. The first rotation speed can be a rotation speed at which a deviation in the thickness of the liquid film due to centrifugal force is suppressed. Also, during the liquid film formation step, the flow rate of the cooling gas 3al is maintained at the same supply amount as in the preparation step. Thus, the in-plane temperature of the substrate 100 can be maintained substantially uniform in the preparation step.

[0102] Also, the first rotation speed can be set from the preparation step. At this time, in the liquid film formation step, the same rotation speed as in the preparation step can be maintained. Alternatively, the second rotation speed can be a rotation speed lower than the first rotation speed.

[0103] Alternatively, when transitioning from the preparation step to the liquid film formation step, the liquid 101 supplied in the preparation step can be discharged by rotating the substrate 100 at high speed after stopping the supply of the liquid 101. At this time, after discharging the liquid 101, the rotation speed of the substrate 100 can be set to a rotation speed (50 rpm or less) at which a liquid film of a uniform thickness can be maintained, or the substrate 100 can be stopped, and thereafter a predetermined amount of liquid 101 can be supplied to the substrate 100. In this way, a liquid film having a predetermined thickness can be easily formed.

[0104] As described later, the thickness of the liquid film when the cooling step is executed can be set to about 30 μm to 1300 μm. For example, the controller 10 controls the supply amount of the liquid 101 and the rotation speed of the substrate 100, and sets the thickness of the liquid film on the surface 100b of the substrate 100 to about 30 μm to 1300 μm.

[0105] Next, the liquid film formation step is executed as shown in Figure 4 and Figure 5The cooling process is executed as shown. In this embodiment, the period between the start of the supercooling process and the start of freezing of the liquid 101 in the supercooling state is referred to as the "supercooling process", the period between the start of freezing of the liquid 101 in the supercooling state and the end of freezing is referred to as the "freezing process (solid-liquid phase)", and the period between the freezing of the liquid 101 and the generation of cracks by further cooling of the frozen liquid 101 is referred to as the "freezing process (solid phase)". In the supercooling process, only the liquid 101 is present on the surface 100b of the substrate 100. In the freezing process (solid-liquid phase), both the liquid 101 and the frozen liquid 101 are present on the surface 100b of the substrate 100. In the freezing process (solid phase), only the frozen liquid 101 is present on the surface 100b of the substrate 100.

[0106] In addition, the solid-liquid phase refers to a state in which both the liquid 101 and the frozen liquid 101 are present.

[0107] First, in the supercooling process, the temperature of the liquid film on the substrate 100 is lowered more than the temperature of the liquid film in the liquid film forming process by continuing the supply of the cooling gas 3a1 to the back surface 100a of the substrate 100, and the liquid 101 is in a supercooling state.

[0108] Here, if the cooling speed of the liquid 101 is too fast, the liquid 101 is immediately frozen without passing through the supercooling state. Therefore, the controller 10 controls at least any one of the rotation speed of the substrate 100, the flow rate of the cooling gas 3a1, and the supply amount of the liquid 101 to place the liquid 101 on the surface 100b of the substrate 100 in a supercooling state.

[0109] The control conditions for the liquid 101 to be in a supercooling state are affected by the size of the substrate 100, the viscosity of the liquid 101, the specific heat of the cooling gas 3a1, and the like. Therefore, it is preferable to appropriately determine the control conditions for the liquid 101 to be in a supercooling state by performing experiments or simulations.

[0110] In the supercooling state, freezing of the liquid 101 starts due to, for example, the temperature of the liquid film, the presence of a contaminant such as a particle, vibration, or the like. For example, when a contaminant such as a particle is present, the liquid 101 starts to freeze when the temperature T of the liquid 101 becomes -35°C or higher and -20°C or lower.

[0111] When the freezing of the supercooled liquid 101 begins, the supercooling process transitions to the freezing process (solid-liquid phase). In the freezing process (solid-liquid phase), on the surface 100b of the substrate 100, there are liquid 101 and frozen liquid 101. As mentioned above, sometimes contaminants in the supercooled liquid 101 become the starting point for freezing, and it is believed that the contaminants enter the solid. In addition, it is believed that the contaminants attached to the surface 100b of the substrate 100 are separated due to the pressure wave caused by the volume change when the liquid 101 changes into a solid, the physical force caused by the increase in volume, etc. Therefore, it is believed that the contaminants attached to the surface 100b of the substrate 100 are separated due to the contaminants entering the solid or by the pressure wave, physical force, etc. generated when a part of the liquid 101 is frozen, thereby achieving cleaning.

[0112] When the liquid film on the surface 100b of the substrate 100 is completely frozen, the freezing process (solid-liquid phase) transitions to the freezing process (solid phase). During the freezing process (solid phase), the temperature of the frozen film on the surface 100b of the substrate 100 further decreases. Here, the liquid 101 primarily contains water. Therefore, the liquid film on the surface 100b of the substrate 100 is completely frozen, forming a frozen film. As the temperature of the frozen film further decreases, the volume of the frozen film decreases, generating stress in the frozen film.

[0113] At this time, for example, when the temperature of the frozen film becomes -50° C. or lower, cracks are generated in the frozen film. If cracks are generated in the frozen film, contaminants attached to the surface 100 b of the substrate 100 are more easily separated from the surface 100 b of the substrate 100 .

[0114] Next, after cracks occur in the frozen film, Figure 4 and Figure 5 The thawing process is performed as shown. For example, the generation of cracks can be detected by a sensor not shown. Figure 4 and Figure 5 The example shown is a case where liquid 101 and liquid 102 are the same liquid. Therefore, Figure 4 and Figure 5 It is described as liquid 101.

[0115] During the thawing process, the controller 10 controls the supply unit 4b and the flow rate control unit 4c to supply a predetermined flow rate of liquid 101 to the surface 100b of the substrate 100. Furthermore, when the liquid 101 and the liquid 102 are different liquids, the controller 10 controls the supply unit 5b and the flow rate control unit 5c to supply a predetermined flow rate of liquid 102 to the surface 100b of the substrate 100.

[0116] In addition, the controller 10 controls the flow control section 3c to stop the supply of the cooling gas 3al. In addition, the controller 10 controls the drive section 2c to make the rotation speed of the substrate 100 the third rotation speed. The third rotation speed is, for example, 200 rpm to 700 rpm. If the rotation of the substrate 100 becomes fast, the liquid 101 can be spun off by the centrifugal force. Therefore, the liquid 101 can be discharged from the surface 100b of the substrate 100. At this time, the contaminants separated from the surface 100b of the substrate 100 are also discharged together with the liquid 101.

[0117] Also, the supply amount of the liquid 101 or the liquid 102 is not particularly limited as long as the amount is a thawable amount. In addition, the rotation speed of the substrate 100 is not particularly limited as long as the liquid 101 and the contaminants can be discharged.

[0118] Here, as described above, the supply of the cooling gas 3al is stopped in the thawing process. Therefore, the substrate 100 is not directly cooled by the cooling gas 3al. However, in the preparation process, the liquid film forming process, and the cooling process, the chuck 2a is cooled because the cooling gas 3al is continuously supplied. At this time, even if the supply of the cooling gas 3al is stopped in the thawing process, the chuck 2a continues to maintain a relatively low temperature for a certain period of time. If the temperature of the chuck 2a is relatively low, the heat transferred from the substrate 100 to the chuck 2a by radiation increases, and the substrate 100 is sometimes cooled. In addition, the air around the chuck is sometimes cooled by the chuck, and the substrate 100 is cooled by the cooled air. If the substrate 100 is cooled, dew condensation in which particles or the like in the environment enter the surface 100b or the back surface 100a of the substrate 100 can occur. If the dew condensation occurs, contamination or water marks can be generated.

[0119] Therefore, in the substrate processing apparatus 1 according to the present embodiment, the controller 10 controls the drive section 9b2 to raise the susceptor 9bl. As described above, because the repulsive force is generated between the susceptor 9bl and the susceptor 9al, when the susceptor 9bl is raised, the susceptor 9al is pressed by the susceptor 9bl and is raised. When the susceptor 9al is raised, the substrate 100 held by the plurality of holding sections 2al is raised, and the distance between the substrate 100 and the chuck 2a increases. The distance at this time is a distance LI which corresponds to the second distance. If the distance between the substrate 100 and the chuck 2a increases, even if the temperature of the chuck 2a is relatively low, the heat transferred from the substrate 100 to the chuck 2a by radiation decreases. In addition, the cooling of the substrate by the air cooled by the chuck is suppressed. Therefore, the cooling of the substrate 100 and the dew condensation on the surface 100b or the back surface 100a of the substrate 100 can be suppressed. In addition, because the heat transferred from the substrate 100 to the chuck 2a decreases, the thawing time is shortened. The distance between the substrate 100 and the chuck 2a is, for example, 10 mm or more.

[0120] In addition, the base 9b1 is coupled to the base 9a1 by repulsive force. Therefore, the base 9a1 rotates together with the placement table 2a, and even if the position of the base 9b1 in the rotation direction of the placement table 2a is fixed, the position of the base 9a1 can be maintained, so that the position of the substrate 100 can be maintained.

[0121] Also, the timing at which the controller 10 controls the driving section 9b2 to raise the base 9b1 can be before or after the liquid 101 is supplied to the surface 100b of the substrate 100. In the cooling process, the holding section 2a1 cooled by the placement table 2a can freeze to the placement table 2a. By providing the liquid-repellent film on the surface of the placement table 2a and the surface of the holding section 2a1 in contact with the placement table 2a, even if the holding section 2a1 freezes to the placement table 2a, the holding section 2a1 can be easily peeled from the placement table 2a when the base 9b1 is raised.

[0122] In addition, by raising the base 9b1 after the liquid 101 is supplied to the surface 100b of the substrate 100, even if the holding section 2a1 freezes to the placement table 2a, the holding section 2a1 can be thawed by the liquid 101 and more smoothly raised.

[0123] Also, the timing at which the controller 10 controls the driving section 9b2 to raise the base 9b1 can be before or after the liquid 101 is supplied to the surface 100b of the substrate 100. In the cooling process, the holding section 2a1 cooled by the placement table 2a can freeze to the placement table 2a. By providing the liquid-repellent film on the surface of the placement table 2a and the surface of the holding section 2a1 in contact with the placement table 2a, even if the holding section 2a1 freezes to the placement table 2a, the holding section 2a1 can be easily peeled from the placement table 2a when the base 9b1 is raised.

[0124] Next, as shown in FIG. 6, the drying process is performed. Figure 6 Figure 6 As shown in FIG. 7, the drying process is performed.

[0125] In the drying process, the controller 10 controls the supply section 4b and the flow control section 4c to stop supplying the liquid 101. Also, when the liquid 101 and the liquid 102 are different liquids, the controller 10 controls the supply section 5b and the flow control section 5c to stop supplying the liquid 102.

[0126] In addition, in the drying process, the controller 10 controls the driving section 2c to increase the rotation speed of the substrate 100 to a fourth rotation speed faster than the third rotation speed. If the rotation of the substrate 100 is made faster, the substrate 100 can be dried more quickly. Also, the rotation speed of the substrate 100 is not particularly limited as long as the drying can be performed.

[0127] ​Further, in the drying process, the controller 10 controls the driving section 9b2 to be able to maintain the position of the base 9b1, for example. That is, the distance between the substrate 100 and the placement table 2a can be maintained in the thawing process. Further, the controller 10 controls the driving section 9b2 to be able to make the distance between the substrate 100 and the placement table 2a greater or smaller than the distance in the thawing process. For example, the distance is made longer than the first distance and different from the second distance. The third distance is, for example, 6 mm to 9 mm. Or, it can also be made longer than the second distance.

[0128] When the first distance, the second distance, and the third distance are controlled, the driving section 9b2 can be a cylinder having two cylinder bodies or a member combining two cylinders or combining a cylinder and a servo motor.

[0129] For example, if the temperature of the placement table 2a in the drying process is not much changed from the temperature of the placement table 2a in the thawing process, the distance between the substrate 100 and the placement table 2a can be maintained. If the temperature of the placement table 2a in the drying process is higher than the temperature of the placement table 2a in the thawing process, the distance between the substrate 100 and the placement table 2a can also be reduced. The dried substrate 100 is carried out by a carrying device not shown. Therefore, the distance between the substrate 100 and the placement table 2a can also be made a fourth distance longer than the second distance so that the handover to the carrying device becomes easy.

[0130] When the first distance, the second distance, and the fourth distance are controlled, the driving section 9b2 can be a cylinder having two cylinder bodies or a member combining two cylinders or combining a cylinder and a servo motor.

[0131] When the first distance, the second distance, the third distance, and the fourth distance are controlled, the driving section 9b2 can be a multi-stage cylinder or a member combining a plurality of cylinders or combining a plurality of cylinders and a servo motor.

[0132] The substrate 100 on which the freezing cleaning is completed is carried out to the outside of the frame body 6 by a carrying-in and carrying-out port not shown of the frame body 6 via a carrying device not shown.

[0133] Thus, the freezing cleaning process can be performed once. Also, the freezing cleaning process can be performed a plurality of times.

[0134] As explained above, the substrate processing method according to the present embodiment includes a cooling step of supplying a cooling gas 3al to the other surface (back surface 100a) of the substrate 100 rotating with the liquid film on one surface (surface 100b), and a thawing step of thawing the liquid frozen in the cooling step. In the cooling step, the distance between the substrate 100 and the placement table 2a on which the substrate 100 is placed is set to a first distance. In the thawing step, the supply of the cooling gas 3al is stopped, and the distance is set to a second distance longer than the first distance.

[0135] In addition, the substrate processing method according to the present embodiment can further include a drying step of drying the substrate 100 on which the liquid is thawed. In the drying step, the supply of the cooling gas 3al is stopped, and the distance can be set to the second distance or a third distance longer than the first distance and different from the second distance.

[0136] In addition, the substrate processing method according to the present embodiment can further include a carrying-out step of carrying out the dried substrate 100. In the carrying-out step, the supply of the cooling gas 3al is stopped, and the distance can be set to the second distance or a fourth distance longer than the second distance.

[0137] Figure 7 is a mode diagram for illustrating the moving section 19 according to other embodiments.

[0138] The moving section 19 moves the position of the plurality of holding sections 2al of the placement table 2a so as to move the position of the substrate 100 on the placement table 2a.

[0139] As shown in Figure 7 , the moving section 19 can have a support section 9a and a lifting section 19b.

[0140] The lifting section 19b can be, for example, an electromagnet. For example, the electromagnet is provided on the bottom surface of the frame 6, and the aforementioned repulsive force is generated by energizing the electromagnet, whereby the base 9al can be lifted. By stopping the energization of the electromagnet, the base 9al can be lowered due to its own weight.

[0141] Further, the base 9al does not contact the lifting section 19b. To make the base 9al not contact the lifting section 19b, it is sufficient that "t3 > tl + t2" is satisfied.

[0142] At this time, t3 is the distance from the upper surface of the lifting section 19b to the upper surface of the placement table 2a, tl is the length of the support pillar 9a2, and t2 is the thickness of the base 9al.

[0143] Since the polarity of the electromagnet is determined by the direction of the current flow, the direction of the coil winding, the electromagnet can also be used to generate an attractive force by switching the direction of the current flow, whereby the base 9a1 is lowered by the attractive force and the weight. In addition, the aforementioned drive section 9b2 can be provided to raise and lower the electromagnet.

[0144] Figure 8 is a mode diagram for illustrating the mobile section 29 involved in other embodiments.

[0145] The mobile section 29 moves the position of the plurality of holding sections 2a1 for the placement table 2a, so as to move the position of the substrate 100 for the placement table 2a.

[0146] As shown in Figure 8 , the mobile section 29 can have a support section 9a, a lifting section 29b.

[0147] The lifting section 29b can have, for example, a base 29b1, a drive section 9b2.

[0148] The base 29b1 can have, for example, a root 29b1a, a support member 29b1b.

[0149] The root 29b1a is plate-shaped, and can be provided inside the frame 6. The planar shape and the planar size of the root 29b1a can be, for example, the same as the planar shape and the planar size of the aforementioned base 9b1.

[0150] A plurality of support members 29b1b can be provided on the surface of the root 29b1a on the base 9a1 side. The plurality of support members 29b1b can contact the base 9a1. The support member 29b1b has a ball rotatably provided, and the ball can contact the base 9a1. The support member 29b1b can be, for example, a free ball bearing, a ball caster, a roller, or the like.

[0151] In the mobile section 29 involved in the present embodiment, when the root 29b1a is raised, the base 9a1 is pressed against the root 29b1a via the plurality of support members 29b1b. Therefore, the substrate 100 held by the plurality of holding sections 2a1 is raised, and the distance between the substrate 100 and the placement table 2a becomes larger. When the root 29b1a is lowered, the base 9a1 is lowered due to the weight. When the base 9a1 is lowered, the substrate 100 held by the plurality of holding sections 2a1 is lowered, and the distance between the substrate 100 and the placement table 2a becomes smaller.

[0152] Since the part of the support member 29b1b that contacts the base 9a1 is a rotatable ball, the base 9a1 rotates together with the placement table 2a, and even when the position of the root 29b1a in the rotation direction of the placement table 2a is fixed, the position of the base 9a1, and thus the position of the substrate 100, can be maintained.

[0153] If the plurality of support members 29blb come into contact with the base 9al, the rising action of the base 9al can be made more stable. However, if the generation of particles or vibrations is taken into consideration, it is preferable to link the base 9bl to the base 9al by repulsive force.

[0154] Figure 8 is a mode diagram for illustrating the holding portion 2alb involved in other embodiments.

[0155] As Figure 9 indicated, instead of the aforementioned holding portion 2al, a holding portion 2alb can be provided. For example, the holding portion 2alb can be made into a member in which at least one protrusion 2alb (corresponding to one example of a second liquid-repellent portion) is added to the surface of the placement table 2a side of the holding portion 2al. The protrusion 2alb has a property (liquid-repellency) of more easily repelling the liquid 101 than the placement table 2a. The protrusion 2alb contains, for example, a material having the aforementioned liquid-repellency.

[0156] If the protrusion 2alb is provided, the contact area of the holding portion 2alb with the placement table 2a can be reduced, and thus even if the holding portion 2alb and the placement table 2a freeze together, the holding portion 2alb and the placement table 2a are easily peeled off when the base 9bl is raised.

[0157] In addition, as Figure 9 indicated, a liquid-repellent portion 2a3 (corresponding to one example of a first liquid-repellent portion) can also be provided on the surface of the placement table 2a. The liquid-repellent portion 2a3 is in a film shape and contains a material having the aforementioned liquid-repellency. If the liquid-repellent portion 2a3 is provided on the surface of the placement table 2a, the holding portion 2alb and the placement table 2a are more easily peeled off when the base 9bl is raised.

[0158] Figure 9 is a mode diagram for illustrating a liquid-repellent portion 2a4 (corresponding to one example of a third liquid-repellent portion) and a liquid-repellent portion 2a5 (corresponding to one example of a fourth liquid-repellent portion) involved in other embodiments.

[0159] As Figure 9 indicated, a liquid-repellent portion 2a3 (corresponding to one example of a first liquid-repellent portion) can be provided on the surface of the placement table 2a. In addition, a liquid-repellent portion 2a4 can be provided on the surface of the placement table 2a side of the holding portion 2al. The liquid-repellent portion 2a4 is in a plate shape and has a protrusion 2a4a on the surface of the placement table 2a side. The protrusion 2a4a can be provided near the periphery of the liquid-repellent portion 2a4. The protrusion 2a4a can be in a ring shape. The liquid-repellent portion 2a4 has a property (liquid-repellency) of more easily repelling the liquid 101 than the placement table 2a. The liquid-repellent portion 2a4 contains, for example, a material having the aforementioned liquid-repellency.

[0160] In addition, as ​As shown, a liquid-repellent portion 2a5 in a convex shape can be provided on the surface of the placement table 2a. The liquid-repellent portion 2a5 can be provided, for example, at a position opposite to the liquid-repellent portion 2a4. At least either one of the liquid-repellent portion 2a4 and the liquid-repellent portion 2a5 can be provided. The liquid-repellent portion 2a5 can be in a ring shape. The liquid-repellent portion 2a5 has a property (liquid-repellency) of more easily repelling the liquid 101 than the placement table 2a. The liquid-repellent portion 2a5 contains, for example, a material having the aforementioned liquid-repellency.

[0161] When the liquid-repellent portion 2a4 and the liquid-repellent portion 2a5 are provided, in the preparation process, the liquid film formation process, and the cooling process, a gap of a height (for example, 5 mm or more) of the contact angle or more of the liquid 101 and the surface of the placement table 2a is provided between the portion of the liquid-repellent portion 2a4 on which the convex portion 2a4a is not provided and the liquid-repellent portion 2a5. For example, the liquid-repellent portion 2a4 is lifted by the lifting portion 9b, and a gap of 5 mm or more is provided between the portion of the liquid-repellent portion 2a4 on which the convex portion 2a4a is not provided and the liquid-repellent portion 2a5. Also, since the liquid-repellent portion 2a4 and the convex portion 2a4a are liquid-repellent surfaces, the contact angle becomes 90° or more. Therefore, the adhered liquid is at least in a substantially spherical shape, and if more, in an oblong shape (a film shape) having a certain thickness determined by the relationship between the gravity and the specific gravity. The thickness of the liquid is the height of the contact angle.

[0162] In the thawing process and the drying process, a larger gap is provided between the portion of the liquid-repellent portion 2a4 on which the convex portion 2a4a is not provided and the liquid-repellent portion 2a5. For example, a gap of 10 mm or more is provided between the portion of the liquid-repellent portion 2a4 on which the convex portion 2a4a is not provided and the liquid-repellent portion 2a5.

[0163] In this way, in the preparation process, the liquid film formation process, and the cooling process, since the holding portion 2a1 does not directly contact the surface of the placement table 2a, the holding portion 2a1 can be prevented from freezing to the placement table 2a.

[0164] In the preparation process and the liquid film formation process, even if the liquid 101 flows from the substrate 100 to the placement table 2a side through the holding portion 2a1, since the liquid-repellent portion 2a4 is provided, the liquid 101 can be prevented from reaching the surface of the placement table 2a.

[0165] At this time, even if the liquid 101 flows into the gap between the holding portion 2a1 and the surface of the placement table 2a, since the gap between the portion of the liquid-repellent portion 2a4 on which the convex portion 2a4a is not provided and the liquid-repellent portion 2a5 is 5 mm or more, the liquid 101 can be prevented from staying in the gap. Therefore, the liquid 101 can be prevented from freezing in the gap. Also, even if ice of 5 mm or less is formed on the surface of the placement table 2a, the holding portion 2a1 and the placement table 2a are not engaged by the ice.

[0166] Also, a film-like liquid-repellent portion 2a3 (corresponding to one example of the first liquid-repellent portion) can be provided on the surface of the placement table 2a and the side of the placement table 2a of the holding portion 2a1, and a gap of 5 mm or more can be provided between the liquid-repellent portion 2a3 provided on the surface of the placement table 2a and the liquid-repellent portion 2a3 provided on the surface of the holding portion 2a1 in the freezing cleaning process.

[0167] The above describes the embodiments. However, the present application is not limited to these descriptions.

[0168] As for the above-described embodiments, the application that is appropriately designed by those skilled in the art while having the features of the present application is also included in the scope of the present application.

[0169] For example, the shape, size, number, arrangement, and the like of each element of the substrate processing apparatus 1 are not limited to the illustrated content, but can be appropriately changed.

[0170] For example, in the above-described embodiments, although the coolant portion 3a is made to generate the cooling gas 3a1 by causing the coolant to vaporize, the coolant portion can also cool a gas at normal temperature by a cold machine cycle, for example.

[0171] For example, the thawing process can also be performed before a crack is generated on the frozen film in the freezing process (solid phase).

[0172] For example, after the freezing process (solid-liquid phase), the thawing process can also be performed instead of the freezing process (solid phase).

[0173] For example, in the thawing process and the drying process, the supply of the cooling gas can also be maintained in a range in which dew does not occur on the substrate 100. In this way, the time of the freezing cleaning process can be shortened.

[0174] For example, in the above-described embodiments, the thawing process can also be performed after the freezing process (solid-liquid phase) and before the freezing process (solid phase). ​ In the above-described embodiments, the convex portion 2a4a can also not be provided, but only the convex portion 2a5 can be provided.

[0175] In addition, in the height direction, a part of the top end portions of the convex portion 2a4a and the convex portion 2a5 can also overlap each other. At this time, the height of the convex portion 2a5 is made to be a height (for example, 5 mm or more) that is equal to or more than the contact angle of the liquid 101 with the surface of the placement table 2a, and the length of the overlapping portion is also made to be a length that is equal to or more than the contact angle, whereby a labyrinth structure can be made. If the labyrinth structure is made, the liquid 101 can be further prevented from entering between the holding portion 2a1 and the placement table 2a. Therefore, the holding portion 2a1 and the placement table 2a can be further prevented from freezing together.

[0176] For example, the shapes of the convex portions 2a4a and 2a5 are not limited to ring shapes. For example, the convex portion 2a4a can be a dot shape or a wavy shape. In this case, a portion in a ring shape is provided below the portion in a dot shape or a wavy shape of the convex portion 2a5. Also, the thickness of the portion in a ring shape can be 5 mm or more. In addition, the dots of the convex portion 2a4a are provided so as to surround the periphery of the hydrophobic portion 2a4. Also, the dots of the convex portion 2a5 are arranged so as to be located in the gaps provided between the dots of the convex portion 2a4a.

Claims

1. A substrate processing apparatus comprising: a stage configured to be rotatable; a plurality of holding portions provided on one side of the stage and holding a substrate; a liquid supply portion that supplies a liquid having a temperature higher than a freezing point to a surface of the substrate on an opposite side of the stage; a cooling portion that supplies a cooling gas to a space between the stage and the substrate; a moving portion that changes a distance between the stage and the substrate held by the plurality of holding portions; and a controller that controls the cooling portion and the moving portion, wherein the controller executes a cooling process including a supercooling process of changing the liquid on the substrate from a temperature higher than the freezing point to a supercooled state and a freezing process from the supercooled state to a freezing end by the supply of the cooling gas by the cooling portion, and a thawing process of stopping the supply of the cooling gas after the cooling process, wherein in the cooling process, the distance is set to a first distance by controlling the moving portion, and wherein in the thawing process, the distance is set to a second distance longer than the first distance by controlling the moving portion.

2. The substrate processing apparatus according to claim 1, wherein the moving portion includes: a support portion provided with the plurality of holding portions; and a lifting portion that is linked to the support portion by a repulsive force and is capable of lifting and lowering the support portion.

3. The substrate processing apparatus according to claim 2, wherein the support portion includes a first base having magnetism, and wherein the lifting portion includes a second base having magnetism of the same polarity as the first base and opposing the first base. Further comprising a first liquid-repellent portion in a film shape provided on at least either one of a surface of the stage and the stage side of the holding portion and more easily repelling the liquid than the stage. Further comprising a gap of 5 mm or more between the first liquid-repellent portion provided on the surface of the stage and the first liquid-repellent portion provided on the stage side of the holding portion. Further comprising a second liquid-repellent portion in a convex shape provided on the stage side of the holding portion and more easily repelling the liquid than the stage. Further comprising a second liquid-repellent portion in a convex shape provided on the stage side of the holding portion and more easily repelling the liquid than the stage. Further comprising a second liquid-repellent portion in a convex shape provided on the stage side of the holding portion and more easily repelling the liquid than the stage.

9. The substrate processing apparatus according to claim 1, further comprising: a third liquid-repellent portion provided on the stage side of the holding portion and more easily repelling the liquid than the stage; and a fourth liquid-repellent portion provided on a surface of the stage and more easily repelling the liquid than the stage, wherein the third liquid-repellent portion is in a plate shape and has a convex portion on a surface on the stage side, and wherein the fourth liquid-repellent portion is in a convex shape and opposes the third liquid-repellent portion.

10. The substrate processing apparatus according to claim 3, ​ ​ ​ ​ ​ ​ 4. The substrate processing apparatus according to any one of claims 1 to 3, characterized by ​ 5. The substrate processing apparatus according to claim 4, characterized by ​ 6. The substrate processing apparatus according to claim 1, characterized by ​ 7. The substrate processing apparatus according to claim 3, characterized by ​ 8. The substrate processing apparatus according to claim 4, characterized by ​ ​ ​ ​ ​ ​ ​ Further provided are a third liquid-repellent portion provided on the placement table side of the holding portion and more easily repelling the liquid than the placement table; and a fourth liquid-repellent portion provided on the surface of the placement table and more easily repelling the liquid than the placement table. The third liquid-repellent portion is plate-shaped and has a protrusion on the surface on the placement table side. The fourth liquid-repellent portion is convex-shaped and opposes the third liquid-repellent portion.

11. A substrate processing apparatus provided with: a placement table configured to be rotatable; a plurality of holding portions provided on one side of the placement table and holding a substrate; a liquid supply portion supplying a liquid having a temperature higher than a freezing point to a surface opposite to the placement table side of the substrate; a cooling portion supplying a cooling gas to a space between the placement table and the substrate; a moving portion changing a distance between the placement table and the substrate held by the plurality of holding portions; and a controller controlling the cooling portion and the moving portion, characterized in that the controller controls the cooling portion to switch between a first process of supplying the cooling gas and a second process of stopping the supply of the cooling gas, in the first process, the controller controls the moving portion to set the distance to a first distance, and in the second process, the controller controls the moving portion to set the distance to a second distance longer than the first distance. Further provided is a first liquid-repellent portion provided on at least either the surface of the placement table or the placement table side of the holding portion and more easily repelling the liquid than the placement table.

12. The substrate processing apparatus according to claim 11, characterized by A gap of 5 mm or more is provided between the first liquid-repellent portion provided on the surface of the placement table and the first liquid-repellent portion provided on the placement table side of the holding portion.

13. The substrate processing apparatus according to claim 12, characterized by 14. A substrate processing method characterized by comprising: a cooling process of supplying a cooling gas to the other surface of a substrate rotating with a liquid film on one surface; and a thawing process of thawing a liquid frozen in the cooling process, in the cooling process, a distance between the substrate and a placement table on which the substrate is placed is set to a first distance, in the thawing process, the supply of the cooling gas is stopped and the distance is set to a second distance longer than the first distance.

15. The substrate processing method according to claim 14, further comprising a drying process of drying the substrate whose liquid is thawed, in the drying process, the supply of the cooling gas is stopped and the distance is set to the second distance or a third distance longer than the first distance and different from the second distance.

16. The substrate processing method according to claim 15, further comprising an unloading process of unloading the dried substrate, in the unloading process, the supply of the cooling gas is stopped and the distance is set to the second distance or a fourth distance longer than the second distance. ​ ​ ​

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