A silicon carbide driving device

Abstract

The present invention provides a silicon carbide drive device, belonging to the field of power supply and power electronics technology, comprising: a processing board, a conditioning circuit is provided on the processing board, and the conditioning circuit is used to condition the input pulse width modulation signal; and a driving board, the driving board is connected to the processing board, and a driving module and a silicon carbide module are provided on the driving board, the driving module is used to boost the pulse width modulation signal after the conditioning process, and the silicon carbide module is used to invert the pulse width modulation signal after the boost process and generate an adjustable current signal and / or an adjustable voltage signal; wherein the driving module supports a pulse signal with a frequency greater than or equal to 1000 KHZ; and the switching frequency of the silicon carbide module is 800 KHZ-1000 KHZ. The silicon carbide drive device of the present invention solves the problem of low switching frequency of the driver in the prior art.

Description

Technical Field

[0001] The invention belongs to the technical field of power supply and power electronics, and in particular relates to a silicon carbide driving device. Background Art

[0002] At present, mainstream drivers mainly use power modules such as IPM (Intelligent Power Module), PIM (Power Integrated Module), IGBT (Insulated Gate Bipolar Transistor), etc. The maximum switching frequency is generally only 20KHZ, and heat dissipation is a major shortcoming for IPM intelligent integrated power modules. The driver technology mainly includes: rectifier circuit technology, DC buffer circuit technology, inverter circuit technology, current and voltage sampling circuit technology, protection circuit technology, reset circuit technology, voltage equalization circuit technology, encoder sampling circuit technology, etc. The driver usually has the following technical requirements: 1. Inversion requirements: support AC-DC-AC rectification and inversion functions, DC-AC (DC-AC) inversion functions; 2. Sampling requirements: encoder sampling, bus voltage sampling, output current sampling and temperature sampling; 3. Protection requirements: output current overcurrent, bus overvoltage, overtemperature and overload protection.

[0003] However, there are several technical problems with existing drivers: 1. The switching frequency is low, with a maximum of only 20KHZ;

[0004] 2. Large internal resistance, large switching loss, large temperature rise, and low inverter efficiency; 3. The buffer circuit, reset circuit, and enable circuit are designed separately, which is inconvenient for users to use and easy to burn the buffer resistor and explode the machine; 3. Few types of encoders are supported; 4. The programs of DSP (Digital Signal Processing) / ARM (Advanced RISC Machine) / FPGA (Field Programmable Gate Array) are solidified, and users cannot perform secondary development. Among these technical problems, the problem of low switching frequency needs to be solved urgently. Summary of the invention

[0005] The embodiment of the present invention provides a silicon carbide driving device to solve the problem of low switching frequency of the driver in the prior art.

[0006] In order to solve the above technical problems, on the one hand, an embodiment of the present invention provides a silicon carbide driving device, comprising:

[0007] A processing board, wherein a conditioning circuit is provided on the processing board, and the conditioning circuit is used to condition the input pulse width modulation signal;

[0008] and a driving board, the driving board being connected to the processing board, the driving board being provided with a driving module and a silicon carbide module, the driving module being used for performing a voltage boost processing on the pulse width modulation signal after the conditioning processing, and the silicon carbide module being used for performing an inversion processing on the pulse width modulation signal after the voltage boost processing and generating a variable current signal and / or a variable voltage signal;

[0009] Wherein, the driving module supports pulse signals with a frequency greater than or equal to 1000 KHZ;

[0010] The switching frequency of the silicon carbide module is 800 KHZ-1000 KHZ.

[0011] According to an embodiment of the present invention, the driving module includes a driving chip, and the model of the driving chip is ACPL-352J.

[0012] According to another embodiment of the present invention, the driving module further comprises a push-pull circuit connected to the driving chip, and the push-pull circuit is used to perform push-pull boost processing on the pulse width modulation signal received by the driving chip.

[0013] According to another embodiment of the present invention, the driving board further includes a driving power supply, and the model of the driving power supply is QA151M.

[0014] According to another embodiment of the present invention, the silicon carbide module is an Infineon silicon carbide module.

[0015] According to another embodiment of the present invention, the model of the silicon carbide module is FF11MR12W1M1.

[0016] According to another embodiment of the present invention, the DC side main circuit structure of the driving board is an AC-DC-AC structure or a DC-AC structure, and the topological structure adopted by the inverter side of the driving board is any one of a single-phase half bridge, a single-phase full bridge, a two-level three-phase half bridge, a two-level three-phase full bridge, a three-level three-phase half bridge, a three-level three-phase full bridge, a five-level three-phase half bridge, a five-level three-phase full bridge and a three-phase four-bridge arm.

[0017] According to another embodiment of the present invention, a sampling module is further provided on the driving board, and the sampling module includes 5-channel voltage sampling and 10-channel current sampling.

[0018] According to another embodiment of the present invention, the silicon carbide driving device further includes an electromagnetic compatibility board, and the electromagnetic compatibility board is connected to the driving board and the processing board respectively.

[0019] On the other hand, an embodiment of the present invention further provides a driving system, comprising the silicon carbide driving device described above and a device to be driven connected to the silicon carbide driving device.

[0020] Beneficial effects of the present invention:

[0021] The pulse width modulation signal input into the silicon carbide driving device of the embodiment of the present invention is processed by the conditioning circuit of the processing board and then sent to the driving module on the driving board to boost the voltage to a preset voltage value and then sent to the silicon carbide module for inversion processing. After being processed by the silicon carbide module, a variable current and voltage signal is generated, which is used to control the device to be driven. In addition, the driving module in this embodiment supports pulse signals with a frequency greater than or equal to 1000 KHZ and the switching frequency of the silicon carbide module is as high as 800 KHZ-1000 KHZ. Therefore, the silicon carbide driving device of the embodiment of the present invention has a simple structure and a high switching frequency, which solves the problem of low switching frequency of the driver in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0023] Figure 1 is a schematic block diagram of an embodiment of a silicon carbide driving device of the present invention;

[0024] Figure 2 is a schematic block diagram of an embodiment of a driving board of a silicon carbide driving device of the present invention;

[0025] Figure 3 It is a three-phase half-bridge main circuit structure diagram of an embodiment of a driving board of a silicon carbide driving device of the present invention;

[0026] Figure 4 is a schematic block diagram of another embodiment of a silicon carbide driving device of the present invention;

[0027] Figure 5 It is a topological structure diagram of an embodiment of the electromagnetic compatibility board of the silicon carbide driving device of the present invention;

[0028] Figure 6 is a schematic block diagram of an embodiment of a drive system of the present invention. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] See also Figure 1 As shown, an embodiment of the present invention provides a silicon carbide driving device 100, comprising:

[0031] A processing board 1, on which a conditioning circuit 10 is provided, and the conditioning circuit 10 is used to condition an input pulse width modulation signal (PWM);

[0032] And, a driving board 2, the driving board 2 is connected to the processing board 1, and a driving module 20 and a silicon carbide module 21 are provided on the driving board 2, the driving module 20 is used to boost the pulse width modulation signal after the conditioning process, and the silicon carbide module 21 is used to invert the pulse width modulation signal after the boost process and generate a variable current signal and / or a variable voltage signal;

[0033] Wherein, the driving module 20 supports a pulse signal with a frequency greater than or equal to 1000 KHZ;

[0034] The switching frequency of the silicon carbide module 21 is 800 kHz-1000 kHz.

[0035] The pulse width modulation signal input in this embodiment is an 8-way PWM modulation instruction, which is processed by the conditioning circuit of the processing board and sent to the driving module on the driving board to boost the voltage to a preset voltage value and then sent to the silicon carbide module for inversion processing. After being processed by the silicon carbide module, a variable current and voltage signal is generated, which is used to control the device to be driven. In addition, the driving module in this embodiment supports pulse signals with a frequency greater than or equal to 1000 KHZ and the switching frequency of the silicon carbide module is as high as 800 KHZ-1000 KHZ. Therefore, the silicon carbide driving device of the embodiment of the present invention has a simple structure and a high switching frequency, which solves the problem of low switching frequency of the driver in the prior art.

[0036] In some implementations, the driver module 20 of the embodiment of the present invention includes a driver chip 201, and the model of the driver chip 201 is ACPL-352J. In this embodiment, the driver chip, that is, the driver optocoupler, is ACPL-352J, which has the following advantages: supports pulse signals above 1000KHZ; has excellent common-mode transient suppression (CMTI) of up to 100kV / μs, which can avoid erroneous gate driver failures in noisy environments; supports rail-to-rail output current up to 5A, so that no output buffer circuit is required; has integrated fail-safe IGBT and MOSFET diagnostic, protection and fault reporting functions; provides minimal propagation delay and excellent timing deviation. The high peak output current and wide operating voltage range of the chip eliminate the need for output buffer circuits, enabling designers to implement cost-effective gate driver solutions for motor drives and power inverters.

[0037] In some implementations, see Figure 2 As shown, the driving module 20 of the embodiment of the present invention also includes a push-pull circuit 202 connected to the driving chip 201, and the push-pull circuit 202 is used to push-pull and boost the pulse width modulation signal received by the driving chip 201. In this embodiment, the driving circuit uses a push-pull circuit, and the advantages of this circuit are: in a general push-pull circuit, such as the output stage, the circuit works to amplify the input signal; and to complete the circuit work, but the general push-pull circuit uses the same level components (transistors or electron tubes) to realize the output stage components to be turned on in turn, and two signals of equal magnitude and opposite phases must be stimulated, that is, the so-called phase inversion problem. The phase inversion can be completed by using a circuit, and an inductor component (transformer) can be used, but this all increases the complexity and reliability of the circuit. Complementary circuits can overcome the above problems that occur when using unipolar components. When the circuit is working, the bipolar components are turned on in turn, and the phase inversion or simplified circuit can also be omitted, so that the stability of the circuit can be improved accordingly. For example, when the input signal is positive, the NPN tube in the bipolar is turned on and the PNP is automatically turned off due to the polarity. When the circuit input signal is negative, the PNP tube is turned on and the NPN tube is turned off. No matter how the signal changes, it can automatically turn on and off to complete the circuit operation. The push-pull circuit has a simple structure and a high utilization rate of the switch transformer core. When the push-pull circuit is working, only one of the two symmetrical power switch tubes is turned on at a time, so the conduction loss is small.

[0038] In some implementations, see Figure 2As shown, the driving board 2 of the embodiment of the present invention also includes a driving power supply 22, and the model of the driving power supply 22 is: QA151M. In this embodiment, the driving power supply uses QA151M, which has the following advantages: high power conversion efficiency, up to 83%; high isolation voltage of 6000VDC, ultra-small isolation capacitance of 3.5pF, and sustainable short-circuit protection; it adopts a two-way independent output and then common connection mode, which can better provide energy for the opening and closing of silicon carbide SiC, and has output short-circuit protection and self-recovery capabilities.

[0039] In some implementations, the silicon carbide module 21 of the embodiment of the present invention is an Infineon silicon carbide module.

[0040] In some implementations, the model of the silicon carbide module 21 of the embodiment of the present invention is FF11MR12W1M1.

[0041] In this embodiment, the silicon carbide module, i.e., the inverter circuit, uses an Infineon silicon carbide module, model FF11MR12W1M1. The advantages of this module are: converting DC power into AC power of different frequencies and phases according to the PWM modulation signal; having a switching frequency of up to 1GHZ; low switching loss, low thermal resistance, and low temperature rise; an inverter conversion efficiency of up to 99%; since silicon carbide has a body diode, an external anti-parallel diode is not required under any circumstances, which simplifies the current freewheeling circuit; it brings smaller product design and higher efficiency; higher frequency operation can make the driver smaller; with a withstand voltage of 1200V, it can operate at higher temperatures, which means that the cooling system can be simpler.

[0042] The silicon carbide drive device of the embodiment of the present invention adopts a three-phase four-bridge arm silicon carbide drive board, which mainly realizes AC-DC-AC inverter function, temperature sampling, 4-way output current sampling, 3-way output voltage sampling, 1-way bus voltage sampling, 1-way bus current sampling, and 8-way PWM push-pull boost to 17V output; it can realize both three-phase motor control and three-phase four-bridge arm power grid control; it adopts a silicon carbide module composed of the world's latest third-generation semiconductor materials, uses the latest driver chip ACPL-352J launched by Avago AVAGO, and the driver power module QA151M of Jinshengyang, and uses a push-pull circuit to make the switching frequency of the silicon carbide power module (model FF11MR12W1M1) reach 800KHZ, so as to control the output current of the silicon carbide driver to be more realistic sine wave waveform and better motor control effect.

[0043] In some implementations, the DC side main circuit structure of the driving board 2 of the embodiment of the present invention is an AC-DC-AC structure or a DC-AC structure, and the topology structure adopted by the inverter side of the driving board 2 is any one of a single-phase half bridge, a single-phase full bridge, a two-level three-phase half bridge, a two-level three-phase full bridge, a three-level three-phase half bridge, a three-level three-phase full bridge, a five-level three-phase half bridge, a five-level three-phase full bridge, and a three-phase four-bridge arm. The silicon carbide driving device of this embodiment can support a variety of topological structures.

[0044] In some implementations, see Figure 2 As shown, the driving board 2 of the embodiment of the present invention is further provided with a sampling module 23, and the sampling module 23 includes 5 voltage samplings and 10 current samplings. The silicon carbide driving device of this embodiment has more and richer sampling signal paths.

[0045] The driving board of the embodiment of the present invention is also provided with a signal level conversion module, a weak current signal isolation module,

[0046] Buffer relay module, rectifier module, bus capacitor filter module, bus voltage equalizing module, brake module, multi-channel power supply module, active Miller clamp module and power module short-circuit protection module, etc.

[0047] In summary, the main functions of the driving board of the embodiment of the present invention include:

[0048] 1. Convert weak current digital signals into analog signals, condition and amplify them and transmit them to the controlled object;

[0049] 2. Invert the industrial frequency AC power supply or DC power supply into AC power supply of various frequencies and provide it to the controlled object, thereby realizing the power conversion function of the power supply, and further realizing the functions of voltage regulation, frequency regulation, current regulation and speed regulation;

[0050] 3. Power devices generally use drive circuits designed with intelligent power modules IPM, PIM, IGBT, and silicon carbide SIC as the core. However, the IPM integrates the drive circuit internally and has fault detection and protection circuits such as overvoltage, overcurrent, overheating, and undervoltage. A soft start circuit or buffer circuit is also designed in the main circuit to reduce the impact of the start-up process on the driver to prevent the instantaneous current from being too large and the bus capacitor from forming a short circuit and causing the machine to explode. The power drive unit first rectifies the input three-phase electricity or city electricity through a three-phase full-bridge uncontrolled rectifier circuit to obtain the corresponding direct current, and then controls the controlled object through a three-phase sinusoidal PWM voltage inverter. The entire process of the power drive unit can be simply described as an AC-DC-AC process; the main topology circuit of the rectifier unit (AC-DC) is a three-phase full-bridge uncontrolled rectifier circuit;

[0051] 4. The main circuit of the DC side of the driver board adopts AC-DC-AC structure and DC-AC structure; the inverter side of the driver board can adopt a three-phase half-bridge, see Figure 3 As shown;

[0052] 5. Support multiple input voltage levels: AC single-phase 220V / three-phase 220V / three-phase 380V input, DC 0~600V input;

[0053] 6. Support power levels: Rated output power (current): 2KW, 15KW, 30KW and 55KW, etc.;

[0054] 7. Support multiple topologies: two-level three-phase half-bridge with three arms and four arms, common collector T-type three-level and other topologies;

[0055] 8. All power module silicon carbide SICs adopt the world's leading Infineon brand, with a maximum withstand voltage of 1200V. The current is selected according to the power level. The switching frequency of silicon carbide SICs is up to 1000KHZ;

[0056] 8. The bus voltage supports a rated DC voltage of DC600V and a maximum of 720V (overvoltage threshold);

[0057] 9. The overload capacity currently supports a maximum of 3 times overload (overload time 1 second);

[0058] 10. Voltage sampling module (5 channels in total): supports phase voltage and line voltage sampling (optional), 1 bus voltage, 1 series capacitor midpoint voltage, 3 driver board output voltages; accuracy 0.5%, response time less than 40us, frequency 200Hz;

[0059] 11. Current sampling module (10 channels in total): 1 channel for bus current, 1 channel for series capacitor midpoint current, 4 channels for driver board output current; 4 channels for driver board cross bridge arm current; accuracy 0.5%, response time less than 1us, frequency 100KHz;

[0060] 12. Protection function: bus overvoltage, driver output current overcurrent, overtemperature protection, braking function, etc.;

[0061] 13. The driver chip of the power module adopts AVAGO brand, which has high performance, driving current up to 2.5A, power supply undervoltage and short circuit protection functions;

[0062] 14. The DCDC power module adopts the MORNSUN brand, which has the characteristics of small output power ripple, low noise and low heat generation;

[0063] 15. The Hall voltage / current sensor adopts ZX brand, which can accurately measure DC, AC, pulse and various irregular waveform voltage / current under electrical isolation conditions;

[0064] 16. The protection circuit adopts the protection circuit composed of TI brand's newly launched DQ trigger, which has the characteristics of sensitive response and low power consumption.

[0065] 17. Support various motor control: AC asynchronous / synchronous motor, permanent magnet synchronous motor, AC servo motor, DC brushless / brushless motor, AC / DC linear motor, customized motor, etc.; widely used in new energy vehicles, motor support system, servo industrial control and other fields;

[0066] 18. Support grid-connected control: realize single-phase grid-connected inverter function and three-phase grid-connected inverter function; widely used in wind power, photovoltaic, energy storage system, UPS system, active filtering, harmonic control, reactive power compensation, three-phase imbalance and other fields.

[0067] 19. All circuit boards adopt a 6-layer design, which has the characteristics of strong anti-interference ability, high signal reliability, and strong EMC electromagnetic compatibility function.

[0068] The main functions of the processing board in the embodiment of the present invention are to condition the collected current, voltage, encoder and other signals, handle fault protection and fault reset in a timely manner, and indirectly control digital input and output signals and other functions.

[0069] The processing board consists of multiple modules, specifically:

[0070] 1. Conditioning circuit is sampling signal conditioning module (voltage, current, temperature, etc.):

[0071] The Hall voltage / current sensor adopts ZX brand, which can accurately measure DC, AC, pulse and various irregular waveform voltage / current under electrical isolation conditions;

[0072] Voltage sampling module (10 channels in total): 1 bus voltage, 3 driver output voltages, 3 grid voltages, and 3 load voltages; accuracy 0.5%, response time less than 40us, frequency 200Hz;

[0073] Current sampling module (13 channels in total): 1 channel for bus current, 4 channels for driver output current, 4 channels for network current, and 4 channels for load current; accuracy 0.5%, response time less than 1us, frequency 100KHz;

[0074] 2. Digital input module DI: 3-way high-speed isolated input (bidirectional), maximum frequency 50KHZ;

[0075] 3. Digital output module DO: 3-way high-speed isolated output, maximum frequency 50KHZ, current 3A / AC250V, 1A / DC30V;

[0076] 4. Multi-channel power supply module (3.3V, 5V, +15V, -15V, 24V):

[0077] Accuracy and linear voltage regulation degree 1%; using MORNSUN brand, with the characteristics of small output power ripple, low noise, low heat, etc.;

[0078] 5. Encoder acquisition module and signal conditioning module:

[0079] Supports multiple encoder types: single-ended / differential incremental (5V / 24V), absolute, resolver, Hall, grating encoder, etc.; supports encoder digital / analog signal output, supports high-resolution / precision encoders (such as 2500 lines / 3600 lines / 5000 lines, etc.);

[0080] 6. Protection module (overvoltage, overcurrent, overtemperature, etc.):

[0081] The protection circuit is composed of the sampling LM293 comparator and the newly launched DQ trigger of TI brand. It has the characteristics of sensitive response and low power consumption, and has bus overvoltage, driver output current overcurrent, overtemperature protection, braking function, etc.

[0082] 7. Fault reset module:

[0083] The reset circuit uses a protection circuit composed of TI's newly launched DQ trigger, which has the characteristics of sensitive response and low power consumption.

[0084] 8. Support 4 pairs of complementary PWM signal output.

[0085] 9. All circuit boards adopt a 6-layer design, which has the characteristics of strong anti-interference ability, high signal reliability, and strong EMC electromagnetic compatibility function.

[0086] In some implementations, see Figure 4 As shown, the silicon carbide driving device 100 of the embodiment of the present invention further includes an electromagnetic compatibility board 3, and the electromagnetic compatibility board 3 is connected to the driving board 2 and the processing board 1 respectively.

[0087] The main functions of the electromagnetic compatibility board EMC in this embodiment are:

[0088] 1. Suppress the noise of the power grid and the high-frequency harmonics generated by the driver and the noise and high-frequency harmonics generated by the switching power supply, mainly to reduce and suppress the electromagnetic interference generated by the driver and meet the European standard EN61000;

[0089] 2. The EMC electromagnetic compatibility board topology can be used as a single L filter and a first-stage LC and two-stage LC filter, see Figure 5 As shown;

[0090] 3. EMC electromagnetic compatibility board technical parameters:

[0091] 1) Rated input voltage: three-phase AC 0~380V;

[0092] 2) Rated output voltage: three-phase AC 0~380V;

[0093] 3) Rated output power (current): 15KW (25A);

[0094] 4) Device configuration: X safety capacitor, Y safety capacitor, varistor, discharge tube, common mode inductor;

[0095] 5) Inductor L parameter: 20mH;

[0096] 6) Working frequency: 50 / 60Hz;

[0097] 7) Temperature range: -25℃~+85℃;

[0098] 8) Temperature rise: < 30℃;

[0099] 9) Withstand voltage test: 1 minute;

[0100] 10) Surge voltage between lines: 2KV;

[0101] 11) Surge voltage between line and ground: 2KV;

[0102] 12) Group pulse EFT voltage between lines: 4KV;

[0103] 13) Group pulse EFT voltage between lines: 4KV;

[0104] 14) All circuit boards adopt a 6-layer design, which has the characteristics of strong anti-interference ability, high signal reliability, and strong EMC electromagnetic compatibility.

[0105] On the other hand, see Figure 6 As shown, an embodiment of the present invention further provides a driving system, including the above-mentioned silicon carbide driving device 100 and a device to be driven 200 connected to the silicon carbide driving device 100 .

[0106] See also Figure 6 As shown, the driving system in this embodiment further includes a switching system 300 and a controller 400, wherein the controller may be a real-time simulation controller.

[0107] In this embodiment, the drive system can be various motor control systems, smart grid systems, new energy grid-connected control systems, wireless charging systems, etc., for example, the following application scenarios:

[0108] 1. Smart grid and new energy grid connection: The main applications of smart grid include high-voltage DC transmission converter valves, flexible DC transmission converter valves, flexible AC transmission devices, high-voltage DC circuit breakers, power electronic transformers and other devices;

[0109] 2. Rail transit system;

[0110] 3. New energy vehicle controller: main drive control, vehicle controller, charging pile, etc.;

[0111] 4. Unmanned driving industry;

[0112] 5. Wireless charging industry;

[0113] 6. Solar inverter;

[0114] 7. Energy storage system;

[0115] 8. UPS: high-efficiency double conversion system;

[0116] 9. Motor driver: active front end and motor side (hybrid silicon carbide);

[0117] 10. Power supply: auxiliary power supply for traction applications, induction heating, etc.

[0118] In summary, the silicon carbide driver according to the embodiment of the present invention has the following advantages:

[0119] 1. Users can re-study and simulate the algorithm program and download the program for real-time debugging, supporting a variety of different motor controls, and also supporting three-phase four-bridge arm power grid control;

[0120] 2. The silicon carbide SIC module made of the world's latest third-generation semiconductor materials is used, and the switching frequency reaches 800KHZ, so that the output current of the silicon carbide driver is more realistic and close to the sine wave waveform, and the motor control effect is better;

[0121] 3. It uses the latest driver chip ACPL-352J launched by AVAGO, which has strong output current capability, gate drive signal undervoltage protection, overcurrent soft shutdown protection, gate signal status feedback and other advantages;

[0122] 4. Use QA151M drive module from Goldensun to generate +15V and -5V power supply, with short circuit protection and self-recovery function;

[0123] 5. Use the latest push-pull drive circuit to increase the gate drive current to 5A, which can drive high-power 100KW silicon carbide power modules;

[0124] 6. It can support a variety of topologies, such as single-phase half-bridge / full-bridge, two-level three-phase half-bridge / full-bridge, three-level three-phase half-bridge / full-bridge, five-level three-phase half-bridge / full-bridge, three-phase four-bridge arms, AC-DC-AC, DC-AC;

[0125] 7. It has more and richer sampling signal paths;

[0126] 8. Comprehensive protection functions, and the driver has a fault self-check function when it is turned on;

[0127] 9. Small internal resistance (usually more than 10 milliohms), small switching loss and low temperature rise;

[0128] 10. PWM switching frequency up to 200KHZ;

[0129] 11. Inverter output efficiency is as high as 98%;

[0130] 12. It supports a large current bandwidth, which is especially suitable for motor control research and power electronics grid-connected research;

[0131] 13. Support high voltage 1200V and high current 600A.

[0132] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the enlightenment of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A silicon carbide driving device, characterized in that: include: A processing board, wherein a conditioning circuit is provided on the processing board, and the conditioning circuit is used to condition the input pulse width modulation signal; and a driving board, the driving board being connected to the processing board, the driving board being provided with a driving module and a silicon carbide module, the driving module being used to perform a voltage boost process on the pulse width modulation signal after the conditioning process, and the silicon carbide module being used to perform an inversion process on the pulse width modulation signal after the voltage boost process and generate a variable current signal and / or a variable voltage signal; Wherein, the driving module supports a pulse signal with a frequency greater than or equal to 1000 KHZ; The switching frequency of the silicon carbide module is 800 KHZ-1000 KHZ; The driving module includes a driving chip, and the model of the driving chip is ACPL-352J; The driving module further comprises a push-pull circuit connected to the driving chip, the push-pull circuit being used for performing push-pull boost processing on the pulse width modulation signal received by the driving chip; The driving board also includes a driving power supply, and the model of the driving power supply is QA151M; The silicon carbide module is an Infineon silicon carbide module; the model of the silicon carbide module is FF11MR12W1M1; The DC side main circuit structure of the driving board is an AC-DC-AC structure or a DC-AC structure, and the topological structure adopted by the inverter side of the driving board is any one of a single-phase half bridge, a single-phase full bridge, a two-level three-phase half bridge, a two-level three-phase full bridge, a three-level three-phase half bridge, a three-level three-phase full bridge, a five-level three-phase half bridge, a five-level three-phase full bridge and a three-phase four-bridge arm; The driving board is also provided with a sampling module, which includes 5-way voltage sampling and 10-way current sampling; The silicon carbide driving device further comprises an electromagnetic compatibility board, and the electromagnetic compatibility board is connected to the driving board and the processing board respectively.

2. A drive system, characterized in that: It comprises the silicon carbide driving device as claimed in claim 1 and a device to be driven connected to the silicon carbide driving device.

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