Sensing device and calibration method

Abstract

A sensing device includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip includes a substrate and a temperature sensor, a pressure sensor, and an environmental state sensor disposed on the substrate. The temperature sensor senses environmental temperature. The pressure sensor senses pressure. The environmental sensor senses an environmental state. The processing circuit obtains a first sensed temperature value through the temperature sensor when the environmental sensor is not operating, and obtains a second sensed temperature value through the temperature sensor when the environmental sensor is operating. The processing circuit obtains a sensed pressure value through the pressure sensor, obtains at least one temperature correction parameter of the pressure sensor according to the first and second sensed temperature values, and corrects the sensed pressure value accordingly to generate a corrected pressure value.

Description

Technical Field

[0001] The present invention relates to a sensing device, and more particularly to a sensing device with multiple sensors integrated into a single chip and a calibration method thereof. Background Art

[0002] Recently, environmental sensing technology is developing towards multifunctional integration, miniaturization, and low prices to facilitate popularization. In existing multifunctional integrated sensing devices, the sensing accuracy is reduced due to the interference between the sensors. For example, in a sensor device that integrates a gas sensor and a pressure sensor, when the gas sensor is operating, the heater of the gas sensor is activated, causing the temperature to rise. The pressure sensor itself has a temperature coefficient, so under the influence of this temperature rise, the output voltage of the pressure sensor is offset and the gain drifts. However, the existing sensor device that integrates the gas sensor and the pressure sensor lacks a correction mechanism for the pressure sensor. When the above-mentioned temperature rise is severe, it will cause the output voltage to saturate, causing the pressure sensor to fail. Therefore, in a multifunctional integrated sensing device, how to eliminate the interference between the sensors is an important issue. Summary of the invention

[0003] Therefore, the present invention provides a multifunctional sensing device, which integrates a temperature sensor, a pressure sensor, a humidity sensor, and a gas sensor into a single chip. The temperature correction parameters of the temperature sensing are self-established to eliminate the thermal interference of other sensors on the pressure sensing. In addition, through the sequential correction mechanism for the pressure sensing, the humidity sensing, and the gas sensing, a more accurate sensing output value can be obtained.

[0004] One embodiment of the present invention provides a sensing device, which includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip is electrically connected to the processing circuit and includes a substrate, a temperature sensor, a pressure sensor, and a first environmental state sensor. The temperature sensor is disposed on the substrate and is used to sense temperature. The pressure sensor is disposed on the substrate and is used to sense pressure. The first environmental sensor is disposed on the substrate and is used to sense a first environmental state. The processing circuit is configured to perform: when the first environmental sensor is not operating, a first sensed temperature value is obtained through the temperature sensor; when the first environmental sensor is operating, a second sensed temperature value is obtained through the temperature sensor; a sensed pressure value is obtained through the pressure sensor; and at least one temperature correction parameter of the pressure sensor is obtained according to the first sensed temperature value and the second sensed temperature value, and the sensed pressure value is corrected according to the at least one temperature correction parameter to generate a corrected pressure value.

[0005] One embodiment of the present invention provides a calibration method for a sensing device. The sensing device includes a multi-sensor integrated single chip and a processing circuit, and the multi-sensor integrated single chip includes a temperature sensor, a pressure sensor, and a first environmental sensor. The calibration method includes the steps of: the processing circuit drives the temperature sensor to sense temperature and generate a sensed temperature value; the processing circuit drives the first environmental sensor and drives the temperature sensor to sense temperature and generate a second sensed temperature value; the processing circuit drives the pressure sensor to sense pressure and generate a sensed pressure value; and the processing circuit obtains at least one temperature correction parameter of the pressure sensor according to the first sensed temperature value and the second sensed temperature value, and corrects the sensed pressure value according to the at least one temperature correction parameter to generate a corrected pressure value. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1A FIG. 4 shows a sensing device according to an embodiment of the present invention.

[0007] Figure 1B FIG. 4 shows a sensing device according to another embodiment of the present invention.

[0008] Figure 1C FIG. 4 shows a sensing device according to another embodiment of the present invention.

[0009] Figure 1D FIG. 4 shows a sensing device according to another embodiment of the present invention.

[0010] Figure 2 According to an embodiment of the present invention, Figure 1C Schematic diagram of multi-sensor integration into a single chip for a sensing device.

[0011] Figure 3A FIG. 4 is a flow chart of a calibration method according to an embodiment of the present invention.

[0012] Figure 3B FIG. 4 is a flow chart of a calibration method according to another embodiment of the present invention.

[0013] Figure 4A A flow chart showing a method for generating temperature correction parameters according to an embodiment of the present invention.

[0014] Figure 4B-1 , Figure 4B-2 A flow chart showing a method for generating temperature correction parameters according to another embodiment of the present invention.

[0015] Figure 5A FIG. 4 is a schematic diagram showing the relationship between the operating states of the pressure sensor, the gas sensor and the humidity sensor and the temperature values ​​obtained during the operation according to an embodiment of the present invention.

[0016] Figure 5B FIG. 4 is a graph showing a relationship between each sensed temperature value and the corresponding pressure output value according to an embodiment of the present invention.

[0017] Figure 5C FIG. 4 is a schematic diagram showing the relationship between each sensed temperature value and an offset temperature coefficient according to an embodiment of the present invention.

[0018] Fig. 6A FIG. 4 is a graph showing a change curve of pressure value at each sensed temperature value when the atmospheric pressure changes according to an embodiment of the present invention.

[0019] Figure 6B FIG. 4 is a curve showing the relationship between different sensed temperature values ​​and corresponding output gains according to an embodiment of the present invention.

[0020] Figure 6C FIG. 4 is a schematic diagram showing the relationship between the sensed temperature value and the gain temperature coefficient according to an embodiment of the present invention.

[0021] Fig. 7A FIG. 4 is a schematic diagram showing the relationship between the operating states of the pressure sensor, the gas sensor and the humidity sensor and the temperature values ​​obtained during the operation according to another embodiment of the present invention.

[0022] Figure 7B FIG. 4 is a graph showing a relationship between each sensed temperature value and the corresponding pressure output value according to another embodiment of the present invention.

[0023] Figure 7C FIG. 4 is a schematic diagram showing the relationship between each sensed temperature value and the offset temperature coefficient according to another embodiment of the present invention.

[0024] Fig. 8A FIG. 4 is a graph showing a change curve of pressure values ​​at various sensed temperature values ​​when the atmospheric pressure changes according to another embodiment of the present invention.

[0025] Figure 8B FIG. 4 is a curve showing the relationship between different sensed temperature values ​​and corresponding output gains according to another embodiment of the present invention.

[0026] Figure 8C FIG. 4 is a schematic diagram showing the relationship between the sensed temperature value and the gain temperature coefficient according to another embodiment of the present invention.

[0027] Fig. 9 According to an embodiment of the present invention, Figure 1A to Figure 1D Circuit architecture of the analog front-end circuit.

[0028] Fig.10 FIG. 4 shows a calibration method according to an embodiment of the present invention.

[0029] Explanation of symbols

[0030] 1: Sensing device

[0031] 10: Multi-sensor integrated chip (chip)

[0032] 10A: Temperature sensor

[0033] 10B: Pressure sensor

[0034] 10C: Humidity sensor

[0035] 10D, 10D': Gas sensor

[0036] 10E: First Environmental Sensor

[0037] 10F: Second environmental sensor

[0038] 11, 11': Processing circuit

[0039] 12, 12': correction unit 13: digital control unit

[0040] 20:Substrate

[0041] 60: Output offset correction circuit

[0042] 61,62: Amplifier circuit

[0043] 63: Filter

[0044] 64: Output gain correction circuit

[0045] 65: Filter

[0046] 100B: Pressure sensing component

[0047] 100C: First sensing component

[0048] 100D: Second sensing component

[0049] 101B: Reference capacitor

[0050] 101C: First heater

[0051] 101D: Second heater

[0052] 110A: Temperature reading circuit

[0053] 110B: Pressure reading circuit

[0054] 110C: Humidity reading circuit

[0055] 110D: Gas concentration reading circuit

[0056] 111A: Temperature calculation circuit

[0057] 111B: Pressure calculation circuit

[0058] 111C: Humidity calculation circuit

[0059] 111D: Gas concentration calculation circuit

[0060] 112B: Pressure sensor calibration circuit

[0061] 112C: first heating drive circuit

[0062] 112D: Second heating drive circuit

[0063] 114: Heating control circuit

[0064] 115: Memory

[0065] 120:Analog front-end circuit

[0066] 121: Delta-Sigma Modulation Analog-to-Digital Converter

[0067] C PRE :Pressure Sensing Capacitor

[0068] D GAS :Gas concentration value

[0069] D' GAS : Correction gas concentration value

[0070] D HUMD :Relative humidity value

[0071] D' HUMD : Correction humidity value

[0072] D PRE :Sensing pressure value

[0073] D' PRE :Calibration pressure value

[0074] D TEMP :Sensing temperature value

[0075] GC1: First output gain correction parameter

[0076] GC2: Second output gain correction parameters

[0077] OC1: First output offset correction parameters

[0078] OC2: Second output offset correction parameters

[0079] P ref1 :First pressure output value

[0080] P ref2 : The third pressure output value

[0081] P h10: Second pressure output value

[0082] P h11 : The fourth pressure output value

[0083] P h20 : Fifth pressure output value

[0084] P h21 : The sixth pressure output value

[0085] R GAS :Gas sensing resistance value

[0086] R HUMD :Humidity sensing resistor value

[0087] R TEMP : Temperature sensing resistor value

[0088] RS62, RS64: Resistors

[0089] S GAS :Digital temperature signal

[0090] S HUMD :Digital humidity signal

[0091] S PRE :Digital pressure signal

[0092] S TEMP :Digital temperature signal

[0093] S10~S17: Steps

[0094] S30~S37、S32'、S33'、S35、S36': Steps

[0095] S70~S75: Steps

[0096] S111B: Control signal

[0097] S112B: Correction signal

[0098] S114C,S114D:Signal

[0099] T ref : First sensed temperature value

[0100] T h1 : Second sensing temperature value

[0101] T h2 : The third sensed temperature value DETAILED DESCRIPTION

[0102] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, a preferred embodiment is given below and described in detail with reference to the accompanying drawings.

[0103] Figure 1A FIG. 2 is a diagram showing a sensing device according to an embodiment of the present invention. Figure 1A , the sensing device 1 includes a processing circuit 11 and a multi-sensor integrated single chip 10 electrically connected to the processing circuit 11. The multi-sensor integrated single chip 10 includes a substrate (not shown), a temperature sensor 10A, a pressure sensor 10B, and a first environmental sensor 10E. The temperature sensor 10A, the pressure sensor 10B, and the first environmental sensor 10E are configured on the same substrate (not shown). The temperature sensor 10A is used to sense temperature, the pressure sensor 10B is used to sense pressure, and the first environmental sensor 10E is used to sense a first environmental state. Figure 1A In the illustrated embodiment, the first environmental sensor 10E is a humidity sensor 10C, and the first environmental state is relative humidity.

[0104] Figure 1B 2 is a diagram showing a drawing of a sensing device according to another embodiment of the present invention. Figure 1B The sensing device 1 of this embodiment and Figure 1A Similar to the embodiment shown, Figure 1A The difference between the illustrated embodiments is that the first environmental sensor 10E of the present embodiment is a gas sensor 10D, and the first environmental state of the present embodiment is a gas concentration.

[0105] Figure 3A is a flow chart of a calibration method according to an embodiment of the present invention. Figure 3A , this correction method is applicable to Figure 1A or Figure 1B The sensing device 1 shown. The steps of the calibration method are as follows: execute step S10, the processing circuit 11 drives the temperature sensor 10A to sense the temperature and generate a first sensed temperature value. Then execute step S11, the processing circuit 11 drives the first environment sensor 10E, and drives the temperature sensor 10A to sense the temperature and generate a second sensed temperature value. Execute step S12, the processing circuit 11 drives the pressure sensor 10B to sense the pressure and generate a sensed pressure value. Then execute step S13, the processing circuit 11 obtains at least one temperature calibration parameter of the pressure sensor 10B according to the first sensed temperature value and the second sensed temperature value, and calibrates the sensed pressure value according to the at least one temperature calibration parameter to generate a calibrated pressure value.

[0106] Figure 1C is a diagram showing a sensing device according to another embodiment of the present invention, and Figure 2 is a schematic diagram of the sensing device. Figure 1C , Figure 2 , the sensing device 1 includes a processing circuit 11 and a multi-sensor integrated single chip 10 electrically connected to the processing circuit 11. The multi-sensor integrated single chip 10 includes a substrate 20, a temperature sensor 10A, a pressure sensor 10B, a first environment sensor 10E, and a second environment sensor 10F. The temperature sensor 10A, the pressure sensor 10B, the first environment sensor 10E, and the second environment sensor 10F are configured on the same substrate 20. The temperature sensor 10A is used to sense temperature, and the pressure sensor 10B is used to sense pressure. The first environment sensor 10E is used to sense a first environment state, and the second environment sensor 10F is used to sense a second environment state. In this embodiment, the first environment sensor 10E is a humidity sensor 10C and the first environment state is relative humidity, and the second environment sensor 10F is a gas sensor 10D and the second environment state is gas concentration.

[0107] The temperature sensor 10A is a resistive sensor, that is, it reflects the ambient temperature through the resistance value. The pressure sensor 10B includes a pressure sensing component 100B and a reference capacitor 101B. The pressure sensor 10B of this embodiment is a capacitive sensor, which reflects the ambient pressure through the capacitance value. However, in other embodiments, the pressure sensor 10B can also be a resistive sensor, that is, it reflects the ambient pressure through the resistance value. The humidity sensor 10C includes a first sensing component 100C and a first heater 101C; the humidity sensor 10C of this embodiment is a resistive sensor, that is, it reflects the relative humidity of the environment through the resistance value. The gas sensor 10D includes a second sensing component 100D; the gas sensor 10D of this embodiment is a resistive sensor, that is, it reflects the gas concentration of the environment through the resistance value.

[0108] The processing circuit 11 includes a reading and correction section 12 and a digital control section 13. The reading and correction section 12 includes a temperature reading circuit 110A, a pressure reading circuit 110B, a pressure correction circuit 112B, a humidity reading circuit 110C, a first heating driving circuit 112C, and a gas concentration reading circuit 110D. The pressure reading circuit 110B includes an analog front end circuit 120 and a delta-sigma modulation analog-to-digital converter 121. The digital control section 13 includes a temperature calculation circuit 111A, a pressure calculation circuit 111B, a humidity calculation circuit 111C, a gas concentration calculation circuit 111D, a heating control circuit 114, and a memory 115 capable of storing data. The processing circuit 11 can be integrated on the same chip to form an application specific integrated circuit (ASIC), or can be implemented using a field programmable gate array (FPGA). However, in other embodiments, the processing circuit 11 can also be the reading and correction section 12 integrated into the same chip, while the digital control section 13 is integrated on another chip.

[0109] Figure 3B FIG. 1 is a flow chart of a calibration method according to another embodiment of the present invention. Figure 3B , this correction method is applicable to Figure 1C The sensing device 1 shown. The steps of the calibration method are as follows: execute step S10, the processing circuit 11 drives the temperature sensor 10A to sense temperature and generate a first sensed temperature value, and execute step S11, the processing circuit 11 drives the first environment sensor 10E, and drives the temperature sensor 10A to sense temperature and generate a second sensed temperature value. Execute step S12, the processing circuit 11 drives the pressure sensor 10B to sense pressure and generate a sensed pressure value. Execute step S13, the processing circuit 11 obtains at least one temperature calibration parameter of the pressure sensor 10B according to the first sensed temperature value and the second sensed temperature value, and calibrates the sensed pressure value according to the at least one temperature calibration parameter to generate a calibrated pressure value.

[0110] Then, step S14 is executed, in which the processing circuit 11 drives the first environment sensor 10E to sense the first environment state to generate a sensed first environment state value, and step S15 is executed, in which the processing circuit 11 performs an operation according to the calibrated pressure value and the second sensed temperature value to calibrate the sensed first environment state value and generate a calibrated first environment state value. Then, step S16 is executed, in which the processing circuit 11 drives the second environment sensor 10F to obtain the sensed second environment state value, and step S17 is executed, in which the processing circuit 11 performs an operation according to the calibrated first environment state value to calibrate the sensed second environment state value and generate a calibrated second environment state value. The first environment sensor 10E of this embodiment is a humidity sensor 10C and the first environment state value is a relative humidity value, and the second environment sensor 10F is a gas sensor 10D and the second environment state value is a gas concentration value. The operation details of the calibration method of this embodiment will be described in detail below.

[0111] The resistance value of the temperature sensor 10A varies with the temperature of the environment or the substrate 20, which is referred to herein as the temperature sensing resistance value R TEMP When the sensing device 1 senses the ambient temperature, the temperature reading circuit 110A can obtain the temperature sensing resistance value R TEMP , and the temperature sensing resistor value R TEMP Converted into a digital temperature signal S TEMP The temperature operation circuit 111A can control the temperature reading circuit 110A and is configured to receive and process the digital temperature signal S TEMP , and generates the digital temperature signal S according to an ambient temperature lookup table stored in the memory 115 TEMP Corresponding sensed temperature value D TEMP , to reflect the current ambient temperature. The temperature calculation circuit 111A is also configured to sense the temperature value D TEMP Stored in the memory 115.

[0112] The capacitance value of the pressure sensing component 100B of the pressure sensor 10B changes with the ambient pressure. For example, the ambient pressure is reflected in the capacitance change between the pressure sensing component 100B and the reference capacitor 101B, which is referred to as the pressure sensing capacitor C. PRE When the sensing device 1 senses the ambient pressure, the pressure reading circuit 110B obtains the pressure sensing capacitor C PRE , and the analog front-end circuit 120 of the pressure reading circuit 110B and the delta-sigma modulation analog-to-digital converter 121 are used to sense the pressure sensing capacitor C PRE Perform conversion and generate a digital pressure signal S corresponding to the capacitance value PRE The pressure operation circuit 111B can control the operation of the analog front end circuit 120 and is configured to receive and process the digital pressure signal S PRE, and generates the digital pressure signal S according to an ambient pressure lookup table stored in the memory 115 PRE The corresponding sensed pressure value D PRE , and the sensed pressure value D PRE The pressure calculation circuit 111B is also configured to convert the sensed pressure value D PRE The pressure correction circuit 112B is coupled to the analog front end circuit 120 and is used to correct the digital pressure signal S PRE , and performs calibration according to at least one temperature calibration parameter, the at least one temperature calibration parameter being, for example, an output offset calibration parameter or an output gain calibration parameter.

[0113] The pressure calculation circuit 111B reads the sensed temperature value D when performing the environmental pressure measurement from the memory 115. TEMP , and according to the sensed temperature value D TEMP At least one temperature correction parameter is obtained, and a control signal S111B is generated to the pressure correction circuit 112B according to the obtained at least one temperature correction parameter. PRE Converted into digital pressure signal S PRE During the temperature correction process, the analog front-end circuit 120 adjusts the output offset and output gain of the analog front-end circuit 120 according to the received temperature correction parameters, thereby achieving the correction operation of the output offset and output gain drifting with temperature. After temperature correction, the pressure operation circuit 111B generates a corrected pressure value D' PRE , and the corrected pressure value D' PRE The temperature correction parameters are generated and the temperature correction of the output offset and the output gain are described later.

[0114] In the process of humidity sensing performed by the humidity sensor 10C of the present embodiment, the heating control circuit 114 generates a signal S114C to control the first heating driving circuit 112C to output a voltage to drive the first heater 101C, and the first heater 101C generates heat energy, so that the first sensing component 100C and the substrate 20 are heated and heated, that is, the ambient temperature is increased. The resistance value of the first sensing component 100C of the humidity sensor 10C changes with the ambient humidity. For example, the ambient humidity is reflected in the resistance value between the two ends of the first sensing component 100C, which is referred to as the humidity sensing resistance value R HUMD When the sensing device 1 senses the ambient humidity, the humidity reading circuit 110C obtains the humidity sensing resistance value R HUMD , and the humidity sensing resistor value R HUMD Converted into a digital humidity signal S corresponding to the resistance value HUMDThe humidity calculation circuit 111C can control the humidity reading circuit 110C and is configured to receive and process the digital humidity signal S HUMD , and generates the digital humidity signal S according to a relative humidity lookup table stored in the memory 115 HUMD The corresponding relative humidity value D HUMD The humidity calculation circuit 111C reads out the sensed temperature value D when performing the environmental humidity measurement from the memory 115. TEMP And the corrected pressure value D' generated after the temperature correction operation PRE , and according to the sensed temperature value D TEMP and the corrected pressure value D' PRE To correct the relative humidity value D HUMD To generate the corrected humidity value D' HUMD , and the corrected humidity value D' HUMD The humidity calculation circuit 111C corrects the humidity value D' HUMD Stored in the memory 115.

[0115] In the process of the gas sensor 10D of the present embodiment performing gas concentration sensing, the heating control circuit 114 generates a signal S114C to control the first heating driving circuit 112C to output a voltage to drive the first heater 101C, and the first heater 101C generates heat energy, so that the substrate 20 is heated and the second sensing component 100D is also heated accordingly. The resistance value of the second sensing component 100D of the gas sensor 10D changes with the gas concentration of the environment. For example, the gas concentration is reflected in the resistance value between the two ends of the second sensing component 100D, which is referred to as the gas sensing resistance value R GAS When the sensing device 1 senses the gas concentration of the environment, the gas concentration reading circuit 110D obtains the gas sensing resistance value R GAS , and the gas sensing resistance value R GAS Converted into a corresponding digital gas signal S GAS The gas concentration calculation circuit 111D calculates the gas concentration based on the digital gas signal S GAS The gas concentration calculation is performed with a baseline resistance value of the gas sensor 10D stored in the memory 115 to obtain a gas concentration value D GAS The gas concentration calculation circuit 111D reads the sensed temperature value D when performing the relative humidity measurement of the environment from the memory 115. TEMP , the corrected pressure value D' generated by the temperature correction operation PRE , and the corrected humidity value D' HUMD , and according to the sensed temperature value D TEMP , Correction pressure value D' PRE , and the corrected humidity value D' HUMDTo perform calculations to compensate for the baseline resistance value of the gas sensor 10D, and then calibrate the gas concentration value D according to the compensated baseline resistance value GAS , to generate the corrected gas concentration value D' GAS , so as to more accurately reflect the gas concentration in the current environment. The gas concentration calculation circuit 111D corrects the gas concentration value D' GAS Stored in the memory 115.

[0116] Figure 1D FIG. 1 is a diagram showing a sensing device according to another embodiment of the present invention. The sensing device of this embodiment is Figure 1C The sensing device shown is similar and can be used to perform Figure 3A or Figure 3B The correction method shown. Figure 1D The embodiment shown is Figure 1C The differences in the sensing devices shown are described below. Figure 1D , Figure 2 In this embodiment, the second environment sensor 10F is a gas sensor 10D'. In addition to Figure 1C The same as shown includes a second sensing component 100D, and the gas sensor 10D' further includes a second heater 101D. In addition, the reading and calibration unit 12' of the processing circuit 11' of this embodiment is Figure 1C In addition to the temperature reading circuit 110A, the pressure reading circuit 110B, the pressure correction circuit 112B, the humidity reading circuit 110C, the first heating driving circuit 112C and the gas concentration reading circuit 110D, the processing circuit 11' further includes a second heating driving circuit 112D. In the process of performing gas concentration sensing, the heating control circuit 114 of the gas sensor 10D' of this embodiment generates a signal S114D to control the second heating driving circuit 112D to output a voltage to drive the second heater 101D, and the second heater 101D generates heat energy, so that the second sensing component 101D and the substrate 20 are heated and heated. The gas sensor 10D' of this embodiment performs gas concentration sensing to further obtain a calibrated gas concentration value D' GAS The method and process are the same as those in the previous embodiment, please refer to the previous embodiment and no repetition will be given.

[0117] The sensing device of the present invention performs a temperature correction operation according to at least one temperature correction parameter. Figure 4A is a flow chart showing a method for generating temperature correction parameters according to an embodiment of the present invention, which is applicable to Figure 1A , Figure 1B , Figure 1C or Figure 1D The sensing device shown. Figure 4A , Figure 2 ,as well as Figure 1A , Figure 1B , Figure 1C or Figure 1D When the sensing device 1 establishes or updates the temperature correction parameters, first, the first atmospheric pressure P0 is applied to the sensing device 1 (step S30), that is, the device 1 is set in an environment of the first atmospheric pressure P0.

[0118] When the sensing device 10 is at the first atmospheric pressure P0, the temperature sensor 10A performs sensing to obtain a first sensing temperature value T ref , and the pressure sensor 10B performs sensing to obtain a first pressure output value P ref1 (Step S31).

[0119] Next, the pressure calculation circuit 111B drives the first heater 101C of the humidity sensor 10C via the heating control circuit 114 and the first heating driving circuit 112C, thereby causing the first heater 101C to heat the substrate 20. At this time, the temperature sensor 10A performs sensing to obtain a second sensing temperature value T h1 , and the pressure sensor 10B performs sensing to obtain a second pressure output value P h10 (Step S32). The pressure calculation circuit 111B calculates the pressure of the first temperature value T ref , the first pressure output value P ref1 , the second sensing temperature value T h1 , and the second pressure output value P h10 To perform calculation to obtain the first offset temperature coefficient TCO 1 and a corresponding first output offset correction parameter OC1 (step S33).

[0120] Next, when the first heater 101C of the humidity sensor 10C is not in operation, the second atmospheric pressure P1 is applied to the sensing device 1, and the pressure sensor 10B performs sensing to obtain a third pressure output value P ref2 (Step S34), at this time, the ambient temperature sensed by the temperature sensor 10A is the first sensed temperature T in step S30 ref The pressure calculation circuit 111B then drives the first heater 101C of the humidity sensor 10C to heat the substrate 20, and the pressure sensor 10B performs sensing to obtain a fourth pressure output value P h11 (Step S35). Next, the pressure calculation circuit 111B calculates the pressure of the first temperature value T ref , the second sensing temperature value T h1 , a first pressure output value P corresponding to the first atmospheric pressure P0 ref1 And the second pressure output value P h10, and a third pressure output value P corresponding to the second atmospheric pressure P1 ref2 And the fourth pressure output value P h11 Perform the operation to obtain the first gain temperature coefficient TCG 1 And the corresponding first output gain correction parameter GC1 (step S36).

[0121] Figure 5A Schematic diagram showing the relationship between the operating status of the pressure sensor 10B, the gas sensor 10D and the humidity sensor 10C and the temperature values ​​obtained during operation. Figure 5A , O P It means that only the pressure sensor 10B is operating (that is, the gas sensor 10D and the humidity sensor 10C are not operating or driven). PH It indicates that the first heater 101C of the pressure sensor 10B and the humidity sensor 10C are both operating.

[0122] Figure 5B is the sensing temperature value T of the present invention ref 、T h1 And the pressure output value P ref1 , P h10 The pressure calculation circuit 111B calculates the second pressure output value P h10 With the first pressure output value P ref1 and calculate the first pressure difference between them (ie, the first output offset) OFT1, and calculate the second sensed temperature value T h1 and the first sensing temperature value T ref The first temperature difference ΔT between 1 The pressure calculation circuit 111B calculates the first pressure difference OFT1 relative to the first temperature difference ΔT 1 The ratio of the slope SL40 of the section 400 of the curve 40 is obtained, and the slope SL40 is the first offset temperature coefficient TCO 1 . Figure 5C is the sensed temperature value T ref 、T h1 With the first offset temperature coefficient TCO 1 Schematic diagram of the relationship between. Further reference Figure 5C , when the temperature of the substrate 20 or the environment of the sensing device 1 is at the first sensing temperature value T ref To the second sensing temperature value T h1 When the value is between , the offset temperature coefficient of the pressure sensor 10B is the first offset temperature coefficient TCO 1 .

[0123] Fig. 6AThe pressure output values ​​and their changes are shown when the sensing device 1 is subjected to the first atmospheric pressure P0 or the second atmospheric pressure P1, under different environments or substrate 20 temperatures, wherein the curve C1 is when the environment or substrate 20 temperature is the first sensing temperature value T ref In the case of the pressure between the first atmospheric pressure P0 and the second atmospheric pressure P1, the pressure output value changes obtained respectively, that is, the pressure output value P ref1 To the third pressure output value P ref2 Curve C2 is when the temperature of the environment or substrate 20 is the second sensing temperature value T h1 In the case of the pressure between the first atmospheric pressure P0 and the second atmospheric pressure P1, the changes in the pressure output values ​​obtained, that is, the second pressure output value P h10 , the fourth pressure output value P h11 The pressure calculation circuit 111B performs calculations to obtain the slope SL50 of the curve C1 and the slope SL51 of the curve C2, and uses the slope SL50 as the reference output gain G of the pressure sensor 10B. 0 , and the slope SL51 is used as the first output gain G of the pressure sensor 10B 1 .

[0124] Figure 6B The temperature of the display environment or substrate 20 is the sensing temperature value T ref 、T h1 The corresponding output gain G 0 , G 1 The pressure operation circuit 111B performs an operation to obtain a first output gain G 1 With reference output gain G 0 The first gain difference ΔG1 between the two, and the second sensed temperature value T h1 and the first sensing temperature value T ref The first temperature difference ΔT between 1 The pressure operation circuit 111B performs operation to obtain the ratio of the first gain difference ΔG1 to the first temperature difference ΔT1, that is, to obtain the slope SL53 of the section 500 of the curve 50, and the slope SL53 is the first gain temperature coefficient TCG. 1 . Figure 6C is a schematic diagram showing the sensed temperature value T ref 、T h1 and gain temperature coefficient TCG 1 The relationship between Figure 6C As shown, when the temperature of the environment of the sensing device 1 or the substrate 20 is at a first sensing temperature value T ref and the second sensing temperature value T h1In the case between 1 .

[0125] When performing the temperature calibration operation on the pressure sensor 10B, the offset temperature coefficient and the gain temperature coefficient of the pressure sensor 10B need to be considered. The output voltage of the pressure reading circuit 110B at this time is VO, which is expressed as:

[0126] VO=[V SENS +OFT+(TCO×ΔT)-(OC)]×[GAIN+(TCG×ΔT)] (Formula 1)

[0127] Among them, V SENS represents the output voltage of the pressure sensor 10B, OFT represents the output offset voltage of the pressure reading circuit 110B, and GAIN represents the output gain of the pressure sensor 10B.

[0128] In this embodiment, in order to eliminate the influence of temperature on the pressure sensor 10B, the temperature correction operation of the sensing device 1 is based on the first sensing temperature value T ref When the temperature of the environment of the sensing device 1 or the substrate 20 is the first sensing temperature value Tref, the output voltage of the pressure reading circuit 110B is VOref, which can be expressed as:

[0129] VOref=[V SENS +OFT0-(OC0)]×[G 0 ] (Formula 2)

[0130] Wherein, OFT0 represents the first sensing temperature value T ref The voltage output reference offset of the pressure reading circuit 110B is shown in FIG. OC0 at the first sensing temperature value T ref Output offset correction parameter of the lower pressure sensor 10B: At this time, setting OC0 equal to OFT0 (OC0 = OFT0) can correct the output offset voltage.

[0131] When the temperature of the environment of the sensing device 1 or the substrate 20 is the second sensing temperature value T h1 When , according to equation 2 and using the voltage output reference offset OFT0, the output voltage of the pressure reading circuit 110B is VO1, which is expressed as:

[0132] VO1=[V SENS +OFT0+(TCO 1 ×ΔT 1 )-(OC1)]×[GC1+(TCG 1 ×ΔT 1 )] (Formula 3)

[0133] Where, ΔT 1 =T h1 -T ref .

[0134] At this time, comparing equation 1 with equation 3, if OC1=OFT0+(TCO 1 ×ΔT 1 ), the offset temperature coefficient TCO can be offset 1 In addition, if GC1 = G 0 -(TCG 1 ×ΔT 1 ), the gain temperature coefficient TCG can be offset 1 The influence of the pressure sensor is to maintain the gain of the pressure sensor at the reference output gain G 0 , correcting the temperature drift of the output gain. Based on the above, the difference between the output offset correction parameters OC0 and OC1 is (TCO 1 ×ΔT 1 ), and the reference output gain G 0 The difference between the first output gain correction parameter GC1 is (TCG 1 ×ΔT 1 ).

[0135] After obtaining the first output offset calibration parameter OC1 and the first output gain calibration parameter GC1, the pressure calculation circuit 111B establishes a lookup table (step S37) which includes the second sensed temperature value T h1 With respect to the relationship between the first output offset correction parameter OC1 and the first output gain correction parameter GC1 , the pressure calculation circuit 111B stores the lookup table in the memory 115 .

[0136] The sensing device of the present invention performs a temperature correction operation according to at least one temperature correction parameter. Figure 4B-1 , Figure 4B-2 is a method for generating temperature correction parameters according to another embodiment of the present invention, which is applicable to Figure 1A , Figure 1B , Figure 1C or Figure 1D The sensing device shown. Figure 4B-1 , Figure 4B-2 , Figure 2 and Figure 1A , Figure 1B , Figure 1C or Figure 1D The method of generating temperature correction parameters in this embodiment is similar to Figure 4ASimilar to the above, in the temperature correction parameters generated in this embodiment, in addition to the first output offset correction parameter and the first output gain correction parameter, a second output offset correction parameter and a second output gain correction parameter are further generated. Figure 4A The differences in the methods shown are explained in the following paragraphs.

[0137] When executed with Figure 4A After the same step S32 as shown, step S32′ is further performed in this embodiment. When the first atmospheric pressure P0 is applied to the sensing device 1, the pressure calculation circuit 111B drives the second heater 101D of the gas sensor 10D via the heating control circuit 114 and the second heating driving circuit 112D, so that the second heater 101D heats the substrate 20. At this time, the temperature sensor 10A performs sensing to obtain a third sensing temperature value T h2 , and the pressure sensor 10B performs sensing to obtain a fifth pressure output value P h20 Step S33' of this embodiment is the same as Figure 4A The step S33 is similar to the above, but in the step S33' of this embodiment, the pressure calculation circuit 111B further calculates the pressure according to the second sensed temperature value T h1 , the second pressure output value P h10 , the third sensing temperature value T h2 And the fifth pressure output value P h20 , to perform calculations to obtain the second offset temperature coefficient TCO 2 And a corresponding second output offset correction parameter OC2.

[0138] On the other hand, in the implementation and Figure 4A After the same steps S34 and S35 as shown in the figure, step S35' is further performed in this embodiment. When the second atmospheric pressure P1 is applied to the sensing device 1, the pressure calculation circuit 111B drives the second heater 101D of the gas sensor 10D to heat the substrate 20, and the pressure sensor 10B performs sensing to obtain a sixth pressure output value P h21 At this time, the ambient temperature sensed by the temperature sensor 10A is the third sensed temperature value T in step S32'. h2 This embodiment is executed in accordance with Figure 4A After the same step S36 as shown, step S36' is further performed, and the pressure calculation circuit 111B calculates the second temperature value T h1 , the third sensing temperature value T h2 , a second pressure output value P corresponding to the first atmospheric pressure P0 h10 And the fifth pressure output value P h20 , a fourth pressure output value P corresponding to the second atmospheric pressure P1 h11 And the sixth pressure output value Ph21 , and the first gain temperature coefficient TCG 1 Perform the operation to obtain the second gain temperature coefficient TCG 2 And the corresponding second output gain correction parameter GC2.

[0139] Fig. 7A Schematic diagram showing the relationship between the operating states of the pressure sensor 10B, the heater 101D of the gas sensor 10D, and the first heater 101C of the humidity sensor 10C and the temperature values ​​obtained during the operation. Fig. 7A In, O P It means that only the pressure sensor 10B is operating (that is, the gas sensor 10D and the humidity sensor 10C are not operating or driven). PH It indicates that the first heater 101D of the pressure sensor 10B and the gas sensor 10D are both operating, and PGH It indicates that the pressure sensor 10B, the second heater 101D of the gas sensor 10D, and the first heater 101C of the humidity sensor 10C are all in operation.

[0140] Figure 7B is the sensing temperature value T of the present invention ref 、T h1 、T h2 And the pressure output value P ref1 , P h10 , P h20 The pressure calculation circuit 111B calculates the second pressure output value P h10 With the first pressure output value P ref1 and calculate the first pressure difference between them (ie, the first output offset) OFT1, and calculate the second sensed temperature value T h1 and the first sensing temperature value T ref The first temperature difference ΔT between 1 The pressure calculation circuit 111B calculates the first pressure difference OFT1 relative to the first temperature difference ΔT 1 The ratio of the slope SL40 of the section 400 of the curve 40' is obtained, and the slope SL40 is the first offset temperature coefficient TCO 1 The pressure calculation circuit 111B calculates the fifth pressure output value P h20 and the second pressure output value P h10 The second pressure difference between the two (ie, the second output offset) OFT2 and the third sensed temperature value T h2 and the second sensing temperature value T h1 The second temperature difference ΔT between 2 The pressure calculation circuit 111B calculates the second pressure difference OFT2 relative to the second temperature difference ΔT2 The ratio of the slope SL41 of the section 401 of the curve 40' is obtained, and the slope SL41 is the second offset temperature coefficient TCO 2 .

[0141] Figure 7C is the sensed temperature value T ref 、T h1 、T h2 The first and second offset temperature coefficients TCO 1 、TCO 2 Schematic diagram of the relationship between. Further reference Figure 7C , when the temperature of the substrate 20 or the environment of the sensing device 1 is at the first sensing temperature value T ref To the second sensing temperature value T h1 When the value is between , the offset temperature coefficient of the pressure sensor 10B is the first offset temperature coefficient TCO 1 When the temperature of the substrate 20 or the environment of the sensing device 1 is at the second sensing temperature value T h1 To the third sensing temperature value T h2 When the value is between , the offset temperature coefficient of the pressure sensor 10B is the second offset temperature coefficient TCO 2 .

[0142] Fig. 8A The pressure output values ​​and their changes are shown when the sensing device 1 is subjected to the first atmospheric pressure P0 or the second atmospheric pressure P1, under different environments or substrate 20 temperatures, wherein the curve C1 is when the environment or substrate 20 temperature is the first sensing temperature value T ref In the case of the pressure between the first atmospheric pressure P0 and the second atmospheric pressure P1, the pressure output value changes obtained respectively, that is, the pressure output value P ref1 To the third pressure output value P ref2 Curve C2 is when the temperature of the environment or substrate 20 is the second sensing temperature value T h1 In the case of the pressure between the first atmospheric pressure P0 and the second atmospheric pressure P1, the changes in the pressure output values ​​obtained, that is, the second pressure output value P h10 , the fourth pressure output value P h11 Curve C3 is when the temperature of the environment or substrate 20 is the third sensing temperature value T h2 In the case of the pressure between the first atmospheric pressure P0 and the second atmospheric pressure P1, the changes in the pressure output values ​​obtained respectively, that is, the fifth pressure output value P h20 , the sixth pressure output value P h21The pressure calculation circuit 111B performs calculations to obtain the slope SL50 of the curve C1, the slope SL51 of the curve C2, and the slope SL52 of the curve C2, and uses the slope SL50 as the reference output gain G of the pressure sensor 10B. 0 , using the slope SL51 as the first output gain G of the pressure sensor 10B 1 and the slope SL52 is used as the second output gain G of the pressure sensor 10B. 2 .

[0143] Figure 8B The temperature of the display environment or substrate 20 is the sensing temperature value T ref 、T h1 、T h2 The corresponding output gain G 0 , G 1 , G 2 The pressure operation circuit 111B performs operation to obtain the first output gain G 1 With reference output gain G 0 The first gain difference ΔG1 between the two, and the second sensed temperature value T h1 and the first sensing temperature value T ref The first temperature difference ΔT between 1 The pressure operation circuit 111B performs operation to obtain the first gain difference ΔG1 relative to the first temperature difference ΔT 1 The ratio of the curve 50′ to the curve 50′ is obtained by obtaining the slope SL53 of the section 500, and the slope SL53 is the first gain temperature coefficient TCG. 1 The pressure operation circuit 111B performs operation to obtain the second output gain G 2 With the first output gain G 1 The second gain difference ΔG2 between the two, and the third sensed temperature value T h2 and the second sensing temperature value T h1 The second temperature difference ΔT between 2 The pressure operation circuit 111B performs operation to obtain the second gain difference ΔG2 relative to the second temperature difference ΔT 2 The ratio of the value of the curve 50′ is the slope SL54 of the section 501, and the slope SL54 is the second gain temperature coefficient TCG. 2 .

[0144] Figure 8C is a schematic diagram showing the sensed temperature value T ref 、T h1 、T h2 and gain temperature coefficient TCG 1 、TCG 2 The relationship between Figure 8C As shown, when the temperature of the environment of the sensing device 1 or the substrate 20 is at the first sensing temperature value T ref and the second sensing temperature value T h1 In the case between, the gain correction parameter of the pressure sensor 10B is the first gain temperature coefficient TCG 1 When the temperature of the environment of the sensing device 1 or the substrate 20 is at the second sensing temperature value T h1 and the third sensing temperature value T h2 When the gain temperature coefficient of the pressure sensor 10B is between 2 .

[0145] When performing the temperature correction operation for pressure sensing, the offset temperature coefficient and the gain temperature coefficient of the pressure sensor 10B need to be considered. The output voltage of the pressure reading circuit 110B at this time is VO, which is expressed as:

[0146] VO=[V SENS +OFT+(TCO×ΔT)-(OC)]×[GAIN+(TCG×ΔT)] (Formula 1)

[0147] Among them, V SENS represents the output voltage of the pressure sensor 10B, OFT represents the output offset voltage of the pressure reading circuit 110B, and GAIN represents the output gain of the pressure sensor 10B.

[0148] In the embodiment of the present invention, in order to eliminate the influence of temperature on the pressure sensor 10B, the temperature correction operation of the sensing device 1 is based on the first sensing temperature value T ref When the temperature of the environment or substrate 20 is the first sensing temperature value T ref When the pressure reading circuit 110B outputs a voltage of VO ref , which is expressed as:

[0149] VO ref =[V SENS +OFT0-(OC0)]×[G 0 ] (Formula 2)

[0150] Wherein, OFT0 represents the first sensing temperature value T ref The voltage output reference offset of the pressure reading circuit 110B is shown in FIG. OC0 at the first sensing temperature value T ref Output offset correction parameter of the lower pressure sensor 10B: At this time, setting OC0 equal to OFT0 (OC0 = OFT0) can correct the output offset voltage.

[0151] When the temperature of the environment of the sensing device 1 or the substrate 20 is the second sensing temperature value T h1When , according to equation 2 and using the voltage output reference offset OFT0, the output voltage of the pressure reading circuit 110B is VO1, which is expressed as:

[0152] VO1=[V SENS +OFT0+(TCO 1 ×ΔT 1 )-(OC1)]×[GC1+(TCG 1 ×ΔT 1 )] (Formula 3)

[0153] Where, ΔT 1 =T h1 -T ref .

[0154] At this time, comparing equation 1 with equation 3, if OC1=OFT0+(TCO 1 ×ΔT 1 ), the offset temperature coefficient TCO can be offset 1 In addition, if GC1 = G 0 -(TCG 1 ×ΔT 1 ), the gain temperature coefficient TCG can be offset 1 The influence of the pressure sensor is to maintain the gain of the pressure sensor at the reference output gain G 0 , correcting the temperature drift of the output gain. Based on the above, the difference between the output offset correction parameters OC0 and OC1 is (TCO 1 ×ΔT 1 ), and the reference output gain G 0 The difference between the first output gain correction parameter GC1 is (TCG 1 ×ΔT 1 ).

[0155] When the temperature of the environment of the sensing device 1 or the substrate 20 is within the third temperature value T h2 When , according to equation 1 and using the voltage output reference offset OFT0, the output voltage of the pressure reading circuit 110B is VO2, which is expressed as:

[0156] VO2=[V SENS +OFT0+(TCO 1 ×ΔT 1 )+(TCO 2 ×ΔT 4 )-(OC2)]×[GC2+(TCG 1 ×ΔT 1 )+(TCG 2 ×ΔT 4 )] (Formula 4)

[0157] Where, ΔT 4 =T h2 -T ref .

[0158] At this time, comparing equation 1 with equation 4, if OC2=OFT0+(TCO 1 ×ΔT 1 )+(TCO 2 ×ΔT 4 ), the offset temperature coefficient TCO can be offset 2 In addition, if GC2 = G 0 -(TCG 1 ×ΔT 1 )-(TCG 2 ×ΔT 4 ), the gain temperature coefficient TCG can be offset 2 The influence of the pressure sensor is to maintain the gain of the pressure sensor at the reference output gain G 0 , correcting the temperature drift of the output gain. According to the above, the difference between the output offset correction parameters OC0 and OC2 is (TCO 1 ×ΔT 1 )+(TCO 2 ×ΔT 4 ), and the reference output gain G 0 The difference between the second output gain correction parameter GC2 is (TCG 1 ×ΔT 1 )+(TCG 2 ×ΔT 4 ).

[0159] According to the above, the pressure calculation circuit 111B obtains the first offset temperature coefficient TCO 1 And the second offset temperature coefficient TCO 2 , and the pressure operation circuit 111B calculates the pressure according to the first offset temperature coefficient TCO 1 The operation is performed to obtain the first output offset correction parameter OC1, that is, the voltage output reference output offset OFT0 is added to the difference between the first and second output offset correction parameters OC0 and OC1 (TCO 1 ×ΔT 1 The pressure operation circuit 111B also calculates the pressure of the second offset temperature coefficient TCO according to the second offset temperature coefficient TCO. 2 The operation is performed to obtain the second output offset correction parameter OC2, that is, the reference output offset voltage OFT0 is added to the difference between the output offset correction parameters OC0 and OC2 (TCO 1 ×ΔT 1 )+(TCO 2 ×ΔT 4). In addition, the pressure operation circuit 111B performs operation to obtain the first gain temperature coefficient TCG 1 And the second gain temperature coefficient TCG 2 , and calculate the first output gain correction parameter GC1, that is, the reference output gain G 0 Subtract the reference output gain G 0 The difference between the first output gain correction parameter GC1 (TCG 1 ×ΔT 1 ), the pressure operation circuit 111B also calculates the second output gain correction parameter GC2, that is, the reference gain G 0 Subtract the reference output gain G 0 The difference between the second output gain correction parameter GC2 (TCG 1 ×ΔT 1 )+(TCG 2 ×ΔT 4 ).

[0160] After obtaining the first and second output offset calibration parameters OC1 and OC2 and the first and second output gain calibration parameters GC1 and GC2, the pressure calculation circuit 111B establishes a lookup table (step S37) including the second sensing temperature value T h1 With respect to the relationship between the first output offset correction parameter OC1 and the first output gain correction parameter GC1, and the third sensed temperature value T h2 With respect to the relationship between the second output offset correction parameter OC2 and the second output gain correction parameter GC2 , the pressure operation circuit 111B stores the lookup table in the memory 115 .

[0161] The following will describe how the first and second output offset calibration parameters OC1 and OC2 and the first and second output gain calibration parameters GC1 and GC2 are obtained through the pressure calibration circuit 112B and the analog front end circuit 120. Fig. 9 The analog front end circuit 120 includes a multi-stage circuit that receives the pressure sensing voltage V PRE , and generates an output voltage VO to the delta-sigma modulation analog-to-digital converter 121. These multi-stage circuits include an output offset correction circuit 60, two-stage amplifier circuits 61-62, filters 63 and 65, and an output gain correction circuit 64. When the temperature correction operation is performed, the pressure operation circuit 111B accesses the memory 115 and searches the lookup table to obtain the output offset correction parameter and the output gain correction parameter corresponding to the current temperature sensing value, for example, to obtain the output offset correction parameter corresponding to the second sensing temperature value T h1The pressure operation circuit 111B generates a control signal S111B to the pressure correction circuit 112B according to the first output offset correction parameter OC1 and the first output gain correction parameter GC1, and the pressure correction circuit 112B generates a correction signal S112B according to the control signal S111B. The analog front end circuit 120 changes the operating voltage V of the output offset correction circuit 60 according to the correction signal S112B. S With V SB or capacitor C S The capacitance value is used to correct the output offset voltage. In addition, the analog front-end circuit 120 changes the resistance value of the resistor RS64 of the output gain correction circuit 64 according to the correction signal S112B to adjust the output gain to eliminate the temperature drift of the gain. In other embodiments, the amplifier circuit 62 and the output gain correction circuit 64 are used for gain correction. For example, the amplifier circuit 62 performs a coarse gain correction by changing the resistance value of its resistor RS62, and the output gain correction circuit 64 performs a fine gain correction by changing the resistance value of its resistor RS64.

[0162] Fig.10 FIG. 4 is a diagram showing a calibration method according to an embodiment of the present invention. Fig.10 The correction method can be used for Figure 1A to Figure 1D Any of the sensing devices. Fig.10 The sensor integrated single chip 10 includes a temperature sensor 10A, a pressure sensor 10B, a humidity sensor 10C and a gas sensor 10D, and at least one of them can be driven to operate (step S70). When the sensor integrated single chip 10 performs sensing of the ambient humidity, only the humidity sensor 10C can be operated, that is, only the humidity sensor 10C is driven; when sensing the ambient gas concentration, since the sensing of the gas concentration is affected by the ambient humidity, the humidity sensor 10C and the gas sensor 10D need to operate together, that is, the humidity sensor 10C and the gas sensor 10D are driven at the same time. When at least one of the humidity sensor 10C and the gas sensor 10D is operating, the first or second heater 101C, 101D inside it is also driven at the same time, thereby causing the ambient temperature of the sensor integrated single chip 10 to rise. The temperature sensor 10A senses the ambient temperature, and generates a sensed temperature value D through the operation of the temperature reading circuit 110A and the temperature calculation circuit 111A. TEMP (Step S71). The pressure sensor 10B senses the ambient pressure, and performs a temperature correction operation through the pressure reading circuit 110B and the pressure calculation circuit 111B to generate a sensed pressure value D PRE (Step S72). In step S72, the correction parameters used in the temperature correction operation are calculated using Figure 4A or Figure 4B-1 , Figure 4B-2 Specifically, when only the humidity sensor 10C is operating (sensing the ambient humidity), that is, only the first heater 101C is driven, the pressure calculation circuit 111B accesses the memory 115 and searches the lookup table to obtain the corresponding second sensing temperature value T h1 The first output offset correction parameter OC1 and the first output gain correction parameter GC1 are used as the first output offset correction parameter OC1 and the first output gain correction parameter GC1. The pressure operation circuit 111B generates a control signal S111B to the pressure correction circuit 112B according to the first offset correction parameter OC1 and the first output gain correction parameter GC1, so as to perform a temperature correction operation by controlling the analog front-end circuit 120 (please refer to the above text for the temperature correction operation). When the humidity sensor 10C and the gas sensor 10D operate together (simultaneously sensing the ambient humidity and the gas concentration), that is, the first and second heaters 101C and 101D are driven at the same time, the pressure data processing circuit 11B accesses the memory 115 and searches the lookup table to obtain the corresponding third sensing temperature value T h2 The pressure operation circuit 111B generates a control signal S111B to the pressure correction circuit 112B according to the second output offset correction parameter OC2 and the second output gain correction parameter GC2, and the pressure correction circuit 112B generates a correction signal S112B according to the control signal S111B, so as to perform a temperature correction operation by controlling the analog front end circuit 120.

[0163] After obtaining the sensed pressure value D generated by the temperature correction operation PRE After that, the humidity sensor 10C senses the relative humidity of the environment and generates a relative humidity value D through the operation of the humidity reading circuit 110C and the humidity calculation circuit 111C. HUMD Humidity calculation circuit 111C accesses memory 115 and searches the lookup table to determine the relative humidity value D HUMD , sensed temperature value D TEMP And the corrected pressure value D' generated by the temperature correction operation PRE Perform calculations to correct the relative humidity value D HUMD , to obtain the corrected humidity value D' HUMD (Step S73). In the case of only sensing the relative humidity of the environment, the process ends after executing step S73. In the case of further sensing the gas concentration, step S74 is performed after executing step S73. In step S74, when the gas sensor 10D senses the gas concentration, the gas concentration reading circuit 110D and the gas concentration calculation circuit 111D perform operations to generate a gas concentration value D GAS , and according to the sensed temperature value D TEMP , Correction pressure value D' PRE , and the corrected humidity value D'HUMD To compensate the baseline resistance value of the gas sensor 10D, and then execute the gas concentration algorithm according to the above data to obtain the corrected gas concentration value D' GAS Finally, the sensing and calibration operation is terminated (step S75).

[0164] Through the above embodiments, it can be known that the sensing device 1 of the present invention integrates at least one of the humidity sensor 10C and the gas sensor 10D, the temperature sensor 10A, and the pressure sensor 10B on a single chip. The sensing device 1 of the present invention can obtain the temperature correction parameters of the pressure sensor 10B when the first heater 101C of the humidity sensor 10C is driven alone, and obtain another set of temperature correction parameters of the pressure sensor 10B when the first heater 101C of the humidity sensor 10C and the second heater 101D of the gas sensor 10D are driven at the same time. Therefore, when the first and / or second heaters 101C and 101D are driven, a temperature correction operation for pressure sensing can be performed according to the temperature correction parameters, so as to eliminate the thermal interference of the first or second heater 101C and 101D on pressure sensing and obtain a more accurate pressure value. After obtaining the corrected pressure value after the temperature correction operation, the relative humidity value and the gas concentration value can be corrected in sequence according to the corrected pressure value, so that it can accurately reflect the relative humidity and gas concentration of the environment. The temperature correction parameters of the present invention are obtained by directly using the first heater 101C of the humidity sensor 10C and / or the second heater 101D of the gas sensor 10D without using an additional heater, thereby effectively reducing the cost.

[0165] In the above Figure 4A to Figure 4B-1 , Figure 4B-2 In the method for generating the correction parameter of the temperature correction operation shown in FIG. 1 , step S32 is to obtain the second sensed temperature value T while driving the first heater 101C. h1 and the second pressure output value P h10 . Figure 4B-1 Step S32′ is to obtain a third sensed temperature value T while driving the first heater 101C and the second heater 101D at the same time. h2 And the fifth pressure output value P h20 .

[0166] In another embodiment, steps S32 and S32′ can be achieved by a single heater, that is, the sensing device includes only one of the first and second heaters 101C, 101D, as described below: In step S31, the first or second heater 101C, 101D outputs a first power (i.e., generates heat energy of a first intensity) to obtain a second sensing temperature value T h1 and the second pressure output value P h10In step S31', the first or second heater 101C, 101D is driven with another voltage to output a second power (ie, generate heat energy of a second intensity) to obtain a third sensed temperature value T h2 And the fifth pressure output value P h20 . For example, in Figure 1C In the embodiment of the present invention, when executing step S31, the first heater 101C is driven by a voltage to obtain a second sensing temperature value T h1 and the second pressure output value P h10 When the step S31' is executed, another voltage is applied to drive the first heater 101C to obtain a third sensing temperature value T h2 And the fifth pressure output value P h20 The heating control circuit of the present invention is driven by the signal sent by the pressure operation circuit, and further drives the first heater or the second heater.

[0167] Although the present invention has been disclosed as above in terms of preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art should be able to make changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the claims.

Claims

1. A sensing device, comprising: Processing circuit; as well as The multi-sensor integrated single chip is electrically connected to the processing circuit and includes: substrate; A temperature sensor is disposed on the substrate and is used to sense temperature; A pressure sensor is disposed on the substrate and is used to sense pressure; and A first environmental sensor is disposed on the substrate and is used to sense a first environmental state; The processing circuit is configured to perform: When the first environment sensor is not operating, obtaining a first sensed temperature value via the temperature sensor; When the first environment sensor is in operation, obtaining a second sensed temperature value via the temperature sensor; obtaining a sensed pressure value via the pressure sensor; and At least one temperature correction parameter for the pressure sensor to eliminate thermal interference of the first environmental sensor is obtained according to the first sensed temperature value when the first environmental sensor is not operating and the second sensed temperature value when the first environmental sensor is operating, and the sensed pressure value is corrected according to the at least one temperature correction parameter to generate a corrected pressure value.

2. The sensing device according to claim 1, wherein: The first environmental sensor includes a first sensing component and a first heater, and the first heater can generate heat energy to increase the temperature of the first sensing component and the substrate, and the temperature sensor can sense the temperature of the substrate.

3. The sensing device according to claim 1, wherein: The first environmental sensor is a humidity sensor or a gas sensor, and the first environmental state is relative humidity or gas concentration.

4. The sensing device according to claim 1, wherein: The processing circuit is further configured to perform: The sensed first environmental state value is obtained through the first environmental sensor, and an operation is performed according to the calibrated pressure value and the second sensed temperature value to calibrate the sensed first environmental state value and generate a calibrated first environmental state value.

5. The sensing device according to claim 4, wherein: The first environment sensor is a humidity sensor, the first environment state is relative humidity, and the sensed first environment state value and the corrected first environment state value are relative humidity values.

6. The sensing device according to claim 1, wherein: The at least one temperature correction parameter includes a first output offset correction parameter.

7. The sensing device according to claim 1, wherein: The at least one temperature correction parameter includes a first output gain correction parameter.

8. The sensing device according to claim 1, wherein: The multi-sensor integrated single chip further includes a second environmental sensor disposed on the substrate, and the second environmental sensor is used to sense a second environmental state. The processing circuit is configured to further execute: Acquiring a sensed first environmental state value through the first environmental sensor, and performing an operation according to the calibrated pressure value and the second sensed temperature value to calibrate the sensed first environmental state value and generate a calibrated first environmental state value; and The sensed second environment state value is obtained through the second environment sensor, and an operation is performed according to the corrected first environment state value to correct the sensed second environment state value and generate a corrected second environment state value.

9. The sensing device of claim 8, wherein: The first environment sensor is a humidity sensor, the first environment state is relative humidity, and the sensed first environment state value and the corrected first environment state value are wet relative humidity values; The second environment sensor is a gas sensor, the second environment state is a gas concentration, and the sensed second environment state value and the corrected second environment state value are gas concentration values; and The processing circuit is further configured to perform: performing an operation according to the second sensed temperature value and the corrected first environmental state value to compensate for a baseline resistance value of the second environmental sensor; as well as An operation is performed according to the compensated baseline resistance value to correct the sensed second environmental state value and generate the corrected second environmental state value.

10. The sensing device according to claim 8, wherein: The first environmental sensor includes a first sensing component and a first heater, and the second environmental sensor includes a second sensing component, and the processing circuit is configured to further perform: driving the first heater to output a first power; as well as driving the first heater to output a second power; The first heater can increase the temperature of the substrate, the temperature of the first sensing component, and the temperature of the second sensing component; and When the first heater outputs the first power, the temperature sensor senses and obtains the first sensed temperature value, and when the first heater outputs the second power, the temperature sensor senses and obtains the second sensed temperature value.

11. The sensing device of claim 8, wherein: The first environmental sensor includes a first sensing component and a first heater, and the second environmental sensor includes a second sensing component and a second heater, wherein the first heater and the second heater can increase the temperature of the substrate, the temperature of the first sensing component, and the temperature of the second sensing component; When the processing circuit drives the first heater, the temperature sensor senses and obtains the first sensed temperature value; as well as When the processing circuit drives the first heater and the second heater simultaneously, the temperature sensor senses and obtains the second sensed temperature value.

12. A calibration method for a sensing device, the sensing device comprising a multi-sensor integrated single chip and a processing circuit, the multi-sensor integrated single chip comprising a temperature sensor, a pressure sensor, and a first environment sensor, the calibration method comprising: The processing circuit drives the temperature sensor to sense temperature when the first environmental sensor is not operating, and generates a first sensed temperature value; The processing circuit drives the first environment sensor and the temperature sensor to sense the temperature and generate a second sensed temperature value; The processing circuit drives the pressure sensor to sense pressure and generate a sensed pressure value; as well as The processing circuit obtains at least one temperature correction parameter for the pressure sensor to eliminate thermal interference of the first environmental sensor based on the first sensed temperature value when the first environmental sensor is not operating and the second sensed temperature value when the first environmental sensor is operating, and corrects the sensed pressure value based on the at least one temperature correction parameter to generate a corrected pressure value.

13. The calibration method according to claim 12, wherein: The first environment sensor includes a first sensing component and a first heater, and when the processing circuit drives the first heater, the processing circuit drives the temperature sensor to sense and generate the second sensed temperature value.

14. The calibration method according to claim 12, wherein: The first environment sensor is a humidity sensor or a gas sensor, and the sensed first environment state value is a relative humidity value or a gas concentration value.

15. The calibration method according to claim 12, further comprising: The processing circuit drives the first environment sensor to sense a first environment state to generate a sensed first environment state value; as well as The processing circuit performs calculation according to the corrected pressure value and the second sensed temperature value to correct the sensed first environmental state value and generate a corrected first environmental state value.

16. The calibration method according to claim 15, wherein: The first environment sensor is a humidity sensor, the first environment state is relative humidity, and the sensed first environment state value and the corrected first environment state value are relative humidity values.

17. The calibration method according to claim 12, wherein: The step of obtaining the at least one temperature calibration parameter of the pressure sensor by the processing circuit according to the first sensed temperature value and the second sensed temperature value comprises: Obtaining, by the processing circuit, a first output offset correction parameter among the at least one temperature correction parameter; The first output offset correction parameter corresponds to the first sensing temperature value and the second sensing temperature value.

18. The calibration method according to claim 12, wherein: The step of obtaining the at least one temperature calibration parameter of the pressure sensor by the processing circuit according to the first sensed temperature value and the second sensed temperature value comprises: Obtaining, by the processing circuit, a first output gain correction parameter among the at least one temperature correction parameter; The first output gain correction parameter corresponds to the first sensing temperature value and the second sensing temperature value.

19. The calibration method according to claim 12, wherein: The multi-sensor integrated single chip further includes a second environmental sensor for sensing a second environmental state, and the calibration method further includes: The processing circuit drives the first environment sensor to obtain a sensed first environment state value; The processing circuit performs a calculation according to the calibrated pressure value and the second sensed temperature value to calibrate the sensed first environmental state value and generate a calibrated first environmental state value; The processing circuit drives the second environment sensor to obtain a sensed second environment state value; and The processing circuit performs an operation according to the corrected first environmental state value to correct the sensed second environmental state value and generate a corrected second environmental state value.

20. The calibration method according to claim 19, wherein: The first environment sensor is a humidity sensor, the first environment state is relative humidity, and the sensed first environment state value and the corrected first environment state value are wet relative humidity values; The second environment sensor is a gas sensor, the second environment state is a gas concentration, and the sensed second environment state value and the corrected second environment state value are gas concentration values; as well as The steps of performing calculation according to the corrected first environmental state value and the second sensed temperature value to correct the sensed second environmental state value and generate the corrected second environmental state value include: The processing circuit performs an operation according to the second sensed temperature value and the corrected first environmental state value to compensate for the baseline resistance value of the second environmental sensor; as well as The processing circuit performs calculations according to the compensated baseline resistance value to correct the sensed second environmental state value and generate the corrected second environmental state value.

21. The calibration method according to claim 19, wherein: The second environmental sensor includes a second sensing component, and the first environmental sensor includes a first sensing component and a first heater, the first heater can increase the temperature of the substrate, the temperature of the first sensing component and the temperature of the second sensing component, and the calibration method further includes: The processing circuit drives the first heater to output a first power; and The processing circuit drives the first heater to output a second power; When the first heater outputs the first power, the temperature sensor senses and obtains the first sensed temperature value, and when the first heater outputs the second power, the temperature sensor senses and obtains the second sensed temperature value.

22. The calibration method according to claim 19, wherein: The first environmental sensor includes a first sensing component and a first heater, and the second environmental sensor includes a second sensing component and a second heater, the first heater and the second heater can increase the temperature of the substrate, the temperature of the first sensing component, and the temperature of the second sensing component, and the calibration method further includes: The processing circuit drives the first heater to operate; and The processing circuit drives the first heater and the second heater to operate simultaneously; When the first heater is driven, the temperature sensor senses and obtains the first sensed temperature value, and when the first heater and the second heater are driven simultaneously, the temperature sensor senses and obtains the second sensed temperature value.

23. The calibration method according to claim 19, wherein: The step of obtaining the at least one temperature calibration parameter of the pressure sensor by the processing circuit according to the first sensed temperature value and the second sensed temperature value comprises: applying a first atmospheric pressure to the sensing device; When the sensing device is applied with the first atmospheric pressure and the temperature sensor senses and obtains the first sensed temperature value, the processing circuit drives the pressure sensor to sense and generate a first pressure output value; When the sensing device is applied with the first atmospheric pressure and the temperature sensor senses and obtains the second sensed temperature value, the processing circuit drives the pressure sensor to sense and generate a second pressure output value; and The processing circuit performs calculation according to the first sensed temperature value, the second sensed temperature value, the first pressure output value, and the second pressure output value to obtain a first output offset correction parameter of the at least one temperature correction parameter.

24. The calibration method according to claim 23, wherein: The step of obtaining the at least one temperature calibration parameter of the pressure sensor by the processing circuit according to the first sensed temperature value and the second sensed temperature value comprises: applying a second atmospheric pressure to the sensing device; When the second atmospheric pressure is applied to the sensing device and the temperature sensor senses and obtains the first sensed temperature value, the processing circuit drives the pressure sensor to sense and generate a third pressure output value; When the second atmospheric pressure is applied to the sensing device and the temperature sensor senses and obtains the second sensed temperature value, the processing circuit drives the pressure sensor to sense and generate a fourth pressure output value; and The processing circuit performs calculations according to the first sensed temperature value, the second sensed temperature value, the first pressure output value, the second pressure output value, the third pressure output value and the fourth pressure output value to obtain a first output gain correction parameter in the at least one temperature correction parameter.

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