Device for controlling temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment

Abstract

The embodiment of the present application discloses a device for controlling the temperature of a cleaning liquid in a wafer cleaning device and a wafer cleaning device, which are used to solve the problem in the prior art that the temperature control of the cleaning liquid is not flexible and accurate enough, and that the protective shell is easily deformed by heat due to the excessive heating temperature of the cleaning liquid. The device includes: a refrigeration plate module, a control module and a first temperature measuring device; the refrigeration plate module is arranged on the outer wall of the cleaning tank, and the control module flexibly controls the refrigeration plate module based on the current temperature and target temperature of the cleaning liquid in the cleaning tank, thereby realizing flexible switching of heating and cooling functions, and further flexibly controlling the temperature of the cleaning liquid. Moreover, since the semiconductor refrigeration plate in the refrigeration plate module is in a working state, a certain temperature difference will be generated between the first plate and the second plate, which can avoid the protective shell of the cleaning tank from being deformed by heat due to the excessive heating temperature of the cleaning liquid, thereby achieving the effect of cooling and protecting the protective shell.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a device for controlling the temperature of a cleaning liquid in a wafer cleaning device and the wafer cleaning device. Background Art

[0002] Wafer cleaning equipment is mainly divided into single-wafer semiconductor cleaning equipment and tank-type semiconductor cleaning equipment for batch cleaning. Among them, tank-type semiconductor cleaning equipment is widely used due to its high pass rate and large production capacity. In the process of cleaning wafers, tank-type semiconductor cleaning equipment needs to configure different chemical agents in the cleaning tank according to the different surface residual substances that need to be removed. In order to achieve the best cleaning effect, the concentration and temperature of the agent often need to be controlled according to the process requirements.

[0003] In the related art, when controlling the temperature of chemicals in a cleaning tank, it is necessary to attach a heating body or a heating body with a radiation heating function to the outer surface of the cleaning tank to form a cleaning tank with a heating function; however, this solution is not easy to control the temperature of the heating body, and it is easy for the temperature of the heating body to be too high, thereby causing the heating temperature of the cleaning liquid to be too high, and further causing the protective shell on the outside of the cleaning tank to be deformed due to heat. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a device for controlling the temperature of the cleaning liquid in a wafer cleaning device and a wafer cleaning device, so as to solve the problem in the prior art that the temperature control of the cleaning liquid in the wafer cleaning device is not flexible and accurate enough, and the protective shell on the outside of the cleaning tank is easily deformed by heat due to the excessive heating temperature of the cleaning liquid.

[0005] To solve the above technical problems, the embodiments of the present application are implemented as follows:

[0006] In a first aspect, an embodiment of the present application provides a device for controlling the temperature of a cleaning liquid in a wafer cleaning device, the device comprising: a cooling plate module, a control module, and a first temperature measuring device; wherein,

[0007] A plurality of cooling plate modules are attached to the outer wall of the cleaning tank of the wafer cleaning equipment, each cooling plate module includes at least two semiconductor cooling plates that are thermally connected in sequence, and each semiconductor cooling plate includes a first plate body and a second plate body; the first plate body and the second plate body are respectively connected to the control module;

[0008] The first temperature measuring device is used to measure the current temperature of the cleaning liquid in the cleaning tank and transmit the current temperature to the control module;

[0009] The control module is used to control the first polarity applied to the first plate in the semiconductor refrigeration plate, the second polarity applied to the second plate in the semiconductor refrigeration plate, and the power applied between the first plate and the second plate according to the current temperature and the target temperature of the cleaning liquid.

[0010] In a second aspect, an embodiment of the present application provides a wafer cleaning device, comprising: a cleaning tank and a device for controlling the temperature of a cleaning liquid in the wafer cleaning device as described in the first aspect.

[0011] By adopting the technical solution of the embodiment of the present application, a refrigeration plate module is set on the outer wall of the cleaning tank, and then the control module controls the electrode polarity of the first plate and the second plate applied to the semiconductor refrigeration plate, as well as the power applied between the first plate and the second plate based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank, so as to flexibly control the temperature of the cleaning liquid in the cleaning tank. This not only can achieve the effect of heating the cleaning liquid, but also can achieve the effect of reducing the temperature of the cleaning liquid from high temperature to low temperature, thereby achieving flexible switching of heating and cooling functions, and making temperature control more precise; and because a certain temperature difference will be generated between the first plate and the second plate when the semiconductor refrigeration plate is in working state, this can play the effect of cooling the protective shell of the cleaning tank, thereby preventing the problem of heat deformation of the protective shell caused by the excessive heating temperature of the cleaning liquid in the cleaning tank. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0013] Figure 1 This is a schematic diagram of a first specific structure of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application;

[0014] Figure 2 This is a schematic diagram of a second specific structure of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application;

[0015] Figure 3 1 is a schematic diagram of a third specific structure of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application;

[0016] Figure 42 is a schematic diagram of a fourth specific structure of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application;

[0017] Figure 5 1 is a schematic diagram of a fifth specific structure of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application;

[0018] Figure 6 1 is a sixth specific structural diagram of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application;

[0019] Figure 7 It is a structural schematic diagram of a wafer cleaning device according to an embodiment of the present application. DETAILED DESCRIPTION

[0020] An embodiment of the present application provides a device for controlling the temperature of a cleaning liquid in a wafer cleaning device and a wafer cleaning device, so as to solve the problem in the prior art that the temperature control of the cleaning liquid in the wafer cleaning device is not flexible and accurate enough, and the protective shell on the outside of the cleaning tank is easily deformed by heat due to the excessive heating temperature of the cleaning liquid.

[0021] In order to enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0022] Figure 1 FIG. 1 is a schematic diagram of a specific structure of a device for controlling the temperature of a cleaning liquid in a wafer cleaning device according to an embodiment of the present application. Figure 1 As shown, the control device includes: a refrigeration plate module 101, a control module 102 and a first temperature measuring device 103; wherein,

[0023] A plurality of cooling plate modules 101 are attached to the outer wall of the cleaning tank 20 of the wafer cleaning equipment. Each cooling plate module 101 includes at least two semiconductor cooling plates connected in series. Each semiconductor cooling plate includes a first plate body and a second plate body. The first plate body and the second plate body are respectively connected to the control module 102. In order to simplify the specific structure of the cooling plate module 101, Figure 1The figure only illustrates the case where the refrigeration plate module 101 includes two semiconductor refrigeration plates (i.e., the first semiconductor refrigeration plate and the second semiconductor refrigeration plate), and does not constitute a limitation on the specific structure of the refrigeration plate module 101. For the case where the refrigeration plate module 101 includes three semiconductor refrigeration plates, the third semiconductor refrigeration plate can be arranged on the outer side of the second plate of the second semiconductor refrigeration plate, and so on. No further details are given here.

[0024] The first temperature measuring device 103 is used to measure the current temperature of the cleaning liquid in the cleaning tank 20 and transmit the current temperature to the control module 102;

[0025] The above-mentioned control module 102 is used to control the first polarity applied to the first plate in the semiconductor refrigeration plate, the second polarity applied to the second plate in the semiconductor refrigeration plate, and the power applied between the first plate and the second plate according to the current temperature and target temperature of the cleaning fluid in the wafer cleaning equipment.

[0026] Among them, each of the above-mentioned semiconductor refrigeration chips can be a thermocouple pair formed by connecting two different semiconductors, one of which (i.e., the first chip or the second chip) is the positive electrode of the semiconductor refrigeration chip, and the other semiconductor (i.e., the second chip or the first chip) is the negative electrode of the semiconductor refrigeration chip. When a voltage is applied between the positive and negative electrodes of the semiconductor refrigeration chip, a certain junction temperature difference will be generated between the two semiconductors. Generally speaking, the junction temperature difference can be around 60°C to 70°C, thereby making one of the semiconductors become the hot side and the other semiconductor become the cold side. Under normal circumstances, when a positive voltage is applied to the positive electrode of the semiconductor refrigeration chip, the semiconductor corresponding to the positive electrode becomes the hot side of the semiconductor refrigeration chip (i.e., applying a positive voltage to the positive electrode of the semiconductor refrigeration chip will cause the semiconductor corresponding to the positive electrode to heat up). When a negative voltage is applied to the negative electrode of the semiconductor refrigeration chip, the semiconductor corresponding to the negative electrode becomes the cold surface of the semiconductor refrigeration chip (that is, applying a negative voltage to the negative electrode of the semiconductor refrigeration chip will cause the semiconductor corresponding to the negative electrode to cool); when the voltage applied to the positive electrode of the semiconductor refrigeration chip changes from positive voltage to negative voltage, the semiconductor corresponding to the positive electrode will change from the hot surface to the cold surface (that is, the semiconductor corresponding to the positive electrode will change from heating to cooling), and when the voltage applied to the negative electrode of the semiconductor refrigeration chip changes from negative voltage to positive voltage, the semiconductor corresponding to the negative electrode will change from the cold surface to the hot surface (that is, the semiconductor corresponding to the negative electrode will change from cooling to heating), that is, when the voltage polarity applied between the two semiconductors in the semiconductor refrigeration chip is switched, the hot surface of the semiconductor refrigeration chip will become the cold surface, and the cold surface of the semiconductor refrigeration chip will become the hot surface.

[0027] In a specific implementation, it is assumed that the two different semiconductors contained in each semiconductor refrigeration chip are respectively a first chip and a second chip, wherein the first chip corresponds to the positive electrode of the semiconductor refrigeration chip, and the second chip corresponds to the negative electrode of the semiconductor refrigeration chip; when a positive voltage is applied to the first chip of the semiconductor refrigeration chip, the first chip can be turned into a hot surface to generate heat, and when a negative voltage is applied to the second chip of the semiconductor refrigeration chip, the second chip can be turned into a cold surface to generate heat; further, the control module 102 can be used to switch the polarity of the power applied between the first chip and the second chip in the semiconductor refrigeration chip, that is, the control module 102 can be used to control the first polarity applied to the first chip in the semiconductor refrigeration chip and the second polarity applied to the second chip in the semiconductor refrigeration chip. The second polarity of the body, when the polarity of the power applied between the first plate and the second plate of the semiconductor refrigeration plate is switched, the first polarity applied to the first plate in the semiconductor refrigeration plate is controlled to change from a positive voltage to a negative voltage (that is, the voltage applied to the first plate of the semiconductor refrigeration plate is changed from a positive voltage to a negative voltage), the first plate can be changed from a hot surface to a cold surface, thereby achieving the effect of cooling the cleaning liquid in the cleaning tank 20, and the second polarity applied to the second plate in the semiconductor refrigeration plate is controlled to change from a negative voltage to a positive voltage (that is, the voltage applied to the second plate of the semiconductor refrigeration plate is changed from a negative voltage to a positive voltage), the second plate can be changed from a cold surface to a hot surface, thereby achieving the effect of heating the cleaning liquid in the cleaning tank 20.

[0028] By adopting the technical solution of the embodiment of the present application, a refrigeration plate module 101 is set on the outer wall of the cleaning tank 20, and then the control module 102 controls the electrode polarity of the first plate and the second plate applied to the semiconductor refrigeration plate, and the power applied between the first plate and the second plate based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank 20, so as to flexibly control the temperature of the cleaning liquid in the cleaning tank 20. This not only can achieve the effect of heating the cleaning liquid, but also can achieve the effect of reducing the cleaning liquid from high temperature to low temperature, thereby achieving flexible switching of heating and cooling functions, and making temperature control more precise; and because a certain temperature difference will be generated between the first plate and the second plate when the semiconductor refrigeration plate is in working state, this can play the effect of cooling the protective shell of the cleaning tank, thereby preventing the problem of heat deformation of the protective shell caused by the excessive heating temperature of the cleaning liquid in the cleaning tank.

[0029] Furthermore, considering that the outer wall area of ​​the cleaning tank 20 of the wafer cleaning equipment may be relatively large, and due to the size limitation of each cooling plate module 101, it may be necessary to set multiple cooling plate modules 101 on the outer wall of the cleaning tank 20 to cover the entire outer wall of the cleaning tank 20. Based on this, multiple cooling plate modules 101 are arranged in an array on the outer wall of the cleaning tank 20 of the wafer cleaning equipment.

[0030] Specifically, there are multiple refrigeration plate modules 101; each refrigeration plate module 101 is arranged in a different outer wall area of ​​the cleaning tank 20; wherein, each first semiconductor refrigeration plate in the multiple refrigeration plate modules 101 is connected in parallel to the control module 102, and each second semiconductor refrigeration plate in the multiple refrigeration plate modules 101 is connected in parallel to the control module 102.

[0031] Specifically, each refrigeration chip module 101 can be regarded as a whole. Still taking the refrigeration chip module 101 including two semiconductor refrigeration chips as an example, for example, the first semiconductor refrigeration chip and the second semiconductor refrigeration chip together constitute a refrigeration chip module 101, wherein the first semiconductor refrigeration chip and the second semiconductor refrigeration chip can be semiconductor refrigeration chips of the same power or semiconductor refrigeration chips of different powers, and can be flexibly set according to actual needs; further, a plurality of refrigeration chip modules 101 can be distributed in an array on the outer wall of the cleaning tank 20, wherein the first chip body and the second chip body of each semiconductor refrigeration chip in the refrigeration chip module 101 are connected in series and then in parallel in their respective control modules 102. For example, assuming there are three refrigeration chip modules 101, each refrigeration chip module 101 has two semiconductor refrigeration chips, such as Figure 2 As shown, the first semiconductor refrigeration plate in the first refrigeration plate module 101, the first semiconductor refrigeration plate in the second refrigeration plate module 101, and the first semiconductor refrigeration plate in the third refrigeration plate module 101 are connected in parallel and connected to the control module 102 together, and the first plate and the second plate in each first semiconductor refrigeration plate are connected in series; and the second semiconductor refrigeration plate in the first refrigeration plate module 101, the second semiconductor refrigeration plate in the second refrigeration plate module 101, and the second semiconductor refrigeration plate in the third refrigeration plate module 101 are connected in parallel and connected to the control module 102 together, and the first plate and the second plate in each second semiconductor refrigeration plate are connected in series. Furthermore, the second plate in the first semiconductor refrigeration plate in each refrigeration plate module 101 is bonded to the first plate of the second semiconductor refrigeration plate in its respective module with a thermally conductive adhesive with good thermal conductivity. In order to simplify the specific structure of the refrigeration plate module 101, Figure 2 The figure only illustrates the case where each refrigeration chip module 101 includes two semiconductor refrigeration chips (i.e., the first semiconductor refrigeration chip and the second semiconductor refrigeration chip), which does not constitute a limitation on the specific structure of the refrigeration chip module 101. For the case where each refrigeration chip module 101 includes at least three semiconductor refrigeration chips, refer to the above Figure 2 Each refrigeration plate module 101 includes a specific structure of two semiconductor refrigeration plates. The third semiconductor refrigeration plates in the multiple refrigeration plate modules 101 are connected in parallel to the control module 102, and so on. No further details are given here.

[0032] During specific implementation, the total power required for heating the cleaning liquid in the cleaning tank 20 can be calculated based on the preset heating rate, the power required when the cleaning liquid in the cleaning tank 20 is heated to a preset maximum temperature (i.e., the maximum value of the target temperature), and the experimentally estimated power loss. According to the total power, a certain number and specification of refrigeration plate modules 101 (for example, the packaging size of the refrigeration plate module 101, the power of the refrigeration plate module 101, and the voltage of the refrigeration plate module 101) can be designed; the actual number of semiconductor refrigeration plates in the refrigeration plate module 101 can also be set to be greater than the target number of semiconductor refrigeration plates theoretically required, so that the number of semiconductor refrigeration plates that need to be started can be flexibly controlled according to actual process requirements, thereby diversifying the use scenarios of the cleaning liquid temperature control device, so that the number of semiconductor refrigeration plates started can be increased to meet the need to heat the cleaning liquid to a higher target temperature.

[0033] In the embodiment provided by the present application, a plurality of refrigeration fin modules 101 are arranged in an array on the outer wall of the cleaning tank 20, so that the refrigeration fin modules 101 are deployed in a larger area on the outer wall of the cleaning tank 20, thereby increasing the area of ​​the heating area on the outer wall of the cleaning tank 20, and the semiconductor refrigeration fins at the same position in the plurality of refrigeration fin modules 101 are connected in parallel to the control module 102, so that the control module 102 can control the plurality of refrigeration fin modules 101 individually, thereby achieving more flexible control of the plurality of refrigeration fin modules 101, and deciding which areas of the refrigeration fin modules 101 on the outer wall of the cleaning tank 20 to open or close can be determined according to actual needs, thereby improving the control flexibility of the heating area on the outer wall of the cleaning tank 20.

[0034] Furthermore, in order to accurately detect the actual temperature between two adjacent semiconductor refrigeration plates in the refrigeration plate module 101, for example, to detect the actual temperature between the second plate in the first semiconductor refrigeration plate and the first plate in the second semiconductor refrigeration plate, so as to achieve precise control of the power applied to the semiconductor refrigeration plate and the electrode polarity applied to the first plate and the second plate in the semiconductor refrigeration plate, a second temperature measuring device can be added between the two semiconductor refrigeration plates, so that the control module 102 determines how to control the electrode polarity applied to the first plate and the second plate in the semiconductor refrigeration plate and the power applied between the first plate and the second plate based on the actual temperature measured by the second temperature measuring device. In this way, not only can the temperature of the cleaning liquid be controlled more accurately, but also the problem of excessive temperature of the second plate of the semiconductor refrigeration plate near the protective shell 104 due to the switching of the electrode polarity of the first plate and the second plate in the semiconductor refrigeration plate can be avoided, thereby causing the protective shell of the cleaning tank to be deformed by heat. Based on this, Figure 3As shown, a protective shell 104 is further provided on the outside of the cleaning tank 20, and a second temperature measuring device 105 is further provided between at least two semiconductor refrigeration sheets;

[0035] The second temperature measuring device 105 is used to measure the actual temperature of the first plate of the semiconductor refrigeration plate close to the protective housing 104, and transmit the measured actual temperature to the control module 102;

[0036] The above-mentioned control module 102 is also used to determine whether to switch the first polarity applied to the first sheet in the semiconductor refrigeration sheet and the second polarity applied to the second sheet in the semiconductor refrigeration sheet based on the above-mentioned actual temperature and the maximum heat resistance temperature of the protective shell 104, and if the judgment result is yes, switch the first polarity of the first sheet and the second polarity of the second sheet, or if the judgment result is no, adjust the power applied between the first sheet and the second sheet.

[0037] Specifically, the above-mentioned second temperature measuring device 105 can be arranged between any two adjacent semiconductor refrigeration plates. The actual temperature of the first plate or the second plate in the semiconductor refrigeration plate is detected by the second temperature measuring device 105, so that the control module 102 can accurately control the electrode polarity applied to the first plate and the second plate in the semiconductor refrigeration plate, as well as the power applied between the first plate and the second plate based on the actual temperature. In a specific implementation, a second temperature measuring device 105 can be set between two adjacent semiconductor refrigeration plates adjacent to the protective shell 104. For example, if the refrigeration plate module includes two semiconductor refrigeration plates, the second temperature measuring device 105 is set between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate. If the refrigeration plate module includes three semiconductor refrigeration plates, and the first semiconductor refrigeration plate, the second semiconductor refrigeration plate and the third semiconductor refrigeration plate are provided in sequence and heat-conductively connected from the outer wall of the cleaning tank to the protective shell 104, then the second temperature measuring device 105 needs to be set at least between the third semiconductor refrigeration plate and the second semiconductor refrigeration plate. Specifically, for the case where the second temperature measuring device 105 is set between two adjacent semiconductor refrigeration plates adjacent to the protective shell 104, since the junction temperature difference of each semiconductor refrigeration plate is known, based on the actual temperature measured by the second temperature measuring device 105 and the junction temperature difference of the semiconductor refrigeration plate adjacent to the protective shell 104, it can be determined whether the temperature of the second plate in the semiconductor refrigeration plate adjacent to the protective shell 104 exceeds the maximum heat resistance temperature of the protective shell 104, so that the protective shell 104 can be better protected.

[0038] Furthermore, considering that when the temperature of the semiconductor refrigeration plate is too high, if the electrode polarity of the first plate and the second plate in the semiconductor refrigeration plate is directly switched, the temperature received by the protective housing 104 may be too high. Therefore, the power of at least one semiconductor refrigeration plate can be adjusted to achieve the cooling effect. When the temperature of the first plate in the semiconductor refrigeration plate adjacent to the protective housing 104 drops to a certain temperature, the electrode polarity applied to the first plate and the second plate in at least one semiconductor refrigeration plate is switched, thereby ensuring that the protective housing 104 is within the allowable temperature range, that is, ensuring that the protective housing 104 does not exceed the protective housing 104. 04 maximum heat-resistant temperature, based on this, the control module 102 is further specifically configured to, when the actual temperature measured by the second temperature measuring device 105 is greater than or equal to a first preset value, adjust the power applied between the first plate and the second plate based on the actual temperature until the actual temperature is less than the first preset value, and when the actual temperature is less than the first preset value, determine to switch the first polarity and the second polarity, that is, when the actual temperature measured by the second temperature measuring device 105 is less than the first preset value, the first polarity applied to the first plate in the semiconductor refrigeration plate and the second polarity applied to the second plate can be switched;

[0039] The first preset value is related to the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the semiconductor refrigeration chip near the protective housing 104. The junction temperature difference of the semiconductor refrigeration chip may be related to the power applied to the semiconductor refrigeration chip. Therefore, the junction temperature difference of the semiconductor refrigeration chip may be determined based on the power currently applied to the semiconductor refrigeration chip. In other words, the first preset value may be dynamically variable. In addition, considering that only some semiconductor refrigeration chips may be activated during actual use, the junction temperature difference of the semiconductor refrigeration chip that determines the first preset value is the junction temperature difference of the semiconductor refrigeration chip in an operating state.

[0040] Specifically, the above Figure 1Taking a refrigeration chip module 101 including a first semiconductor refrigeration chip and a second semiconductor refrigeration chip as an example, the control device for the temperature of the cleaning liquid in the wafer cleaning equipment provided by the embodiment of the present application is explained. First, in the case where the current temperature measured by the first temperature measuring device 103 is room temperature, it is necessary to heat the cleaning liquid in the cleaning tank 20, that is, the current temperature is lower than the target temperature, and the heating state is the initial heating state. In specific implementation, the control module 102 controls the first polarity of the first plate in the first semiconductor refrigeration chip to be positive, and controls the second polarity of the second plate in the first semiconductor refrigeration chip to be negative; controls the second semiconductor refrigeration chip to be negative. The first polarity of the first sheet in the semiconductor refrigeration sheet is positive, and the second polarity of the second sheet in the second semiconductor refrigeration sheet is controlled to be negative, and the power applied to the first semiconductor refrigeration sheet and the power applied to the second semiconductor refrigeration sheet are adjusted by the control module 102. If the temperature of the first sheet in the second semiconductor refrigeration sheet is greater than the temperature of the second sheet in the first semiconductor refrigeration sheet, the temperature of the second sheet in the first semiconductor refrigeration sheet can be increased by heat transfer, and then the temperature of the first sheet in the first semiconductor refrigeration sheet can be made higher through the junction temperature difference of the first semiconductor refrigeration sheet, thereby making the heating temperature of the cleaning liquid higher.

[0041] During specific implementation, it can be decided which semiconductor refrigeration plate to start based on actual conditions. For example, if the target temperature is lower than the sum of the room temperature and the junction temperature difference of the first semiconductor refrigeration plate, only the first semiconductor refrigeration plate can be started; for example, if the target temperature is higher than the sum of the room temperature and the junction temperature difference of the first semiconductor refrigeration plate, the first and second semiconductor refrigeration plates can be started at the same time.

[0042] Furthermore, in the case where the temperature of the heated cleaning liquid needs to be cooled, that is, the current temperature measured by the first temperature measuring device 103 is greater than the target temperature, the cleaning liquid can be quickly cooled by switching the electrode polarity of the first plate and the second plate in the first semiconductor refrigeration plate or the second semiconductor refrigeration plate, and utilizing the cold surface temperature of the switched semiconductor refrigeration plate. Specifically, according to actual conditions, the control module 102 can control the switching of the electrode polarity of the first plate and the second plate in the first semiconductor refrigeration plate, or control the switching of the electrode polarity of the first plate and the second plate in the second semiconductor refrigeration plate. At the same time, considering that when the current temperature of the cleaning liquid is too high, the temperature between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate (that is, the actual temperature measured by the second temperature measuring device 105) will also be too high, it is necessary to first adjust the power applied to the first semiconductor refrigeration plate and the second semiconductor refrigeration plate through the control module 102, thereby achieving the effect of cooling the first semiconductor refrigeration plate and the second semiconductor refrigeration plate, so that the temperature between the second plate of the first semiconductor refrigeration plate and the first plate of the second semiconductor refrigeration plate (that is, the actual temperature measured by the second temperature measuring device 105) is lower than the target temperature. The polarity of the electrode applied to the first semiconductor refrigeration plate or the second semiconductor refrigeration plate can only be switched when the actual temperature measured by the second temperature measuring device 105 is less than the first preset value, that is, the power applied between the first plate and the second plate is adjusted based on the actual temperature measured by the second temperature measuring device 105, and the polarity of the electrode applied to the first semiconductor refrigeration plate or the second semiconductor refrigeration plate can only be switched when the actual temperature is less than the first preset value.

[0043] For example, in the case where the refrigeration chip module 101 includes three semiconductor refrigeration chips, and a first semiconductor refrigeration chip, a second semiconductor refrigeration chip and a third semiconductor refrigeration chip are provided in sequence from the outer wall of the cleaning tank to the protective shell 104, and a second temperature measuring device 105 is provided between the third semiconductor refrigeration chip and the second semiconductor refrigeration chip; assuming that the first preset value is the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor refrigeration chip, if the second temperature measuring device 105 If the measured actual temperature (i.e., the actual temperature between the second plate of the second semiconductor refrigeration plate and the first plate of the third semiconductor refrigeration plate) is greater than or equal to the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor refrigeration plate, and the target temperature is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor refrigeration plate, then it is necessary to adjust the power applied to the first semiconductor refrigeration plate, the second semiconductor refrigeration plate and the size of the third semiconductor refrigeration plate. When the actual temperature between the second plate of the second semiconductor refrigeration plate and the first plate of the third semiconductor refrigeration plate is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor refrigeration plate (i.e., the first preset value), the polarity of the first semiconductor refrigeration plate, the second semiconductor refrigeration plate or the third refrigeration plate can be switched.

[0044] For another example, in the case where the refrigeration chip module 101 includes two semiconductor refrigeration chips, assuming that the first preset value is the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor refrigeration chip, if the actual temperature measured by the second temperature measuring device 105 (i.e., the actual temperature between the second plate of the first semiconductor refrigeration chip and the first plate of the second semiconductor refrigeration chip) is greater than or equal to the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor refrigeration chip, and the target temperature is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor refrigeration chip, then it is necessary to adjust the power applied to the first semiconductor refrigeration chip and the second semiconductor refrigeration chip. Only when the actual temperature between the second plate of the first semiconductor refrigeration chip and the first plate of the second semiconductor refrigeration chip is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor refrigeration chip (i.e., the first preset value) can the polarity of the first semiconductor refrigeration chip or the second refrigeration chip be switched.

[0045] Furthermore, in the case where the temperature of the cooling cleaning liquid needs to be heated again, the polarity applied to the first semiconductor refrigeration plate or the polarity of the second semiconductor refrigeration plate can be directly switched. For example, if the polarity of the first plate of the first semiconductor refrigeration plate in the refrigeration plate module is positive and the polarity of the second plate is negative, and the polarity of the first plate of the second semiconductor refrigeration plate is negative and the polarity of the second plate is positive, then the polarity of the second semiconductor refrigeration plate is directly switched to change the polarity of the first plate of the second semiconductor refrigeration plate from negative to positive (that is, the cold side becomes the hot side), and then by adjusting the power applied to the second semiconductor refrigeration plate, the temperature of the first plate in the second semiconductor refrigeration plate is increased, and then the temperature of the second plate in the first semiconductor refrigeration plate is increased by heat transfer, and then the temperature of the first plate in the first semiconductor refrigeration plate is increased by the junction temperature difference of the first semiconductor refrigeration plate, thereby heating the cleaning liquid in the cleaning tank.

[0046] It should be noted that, for the case where the refrigeration plate module includes at least three semiconductor refrigeration plates, the above-mentioned specific control process can be referred to and will not be described in detail here.

[0047] Among them, considering that controlling the temperature of the cleaning liquid in the cleaning tank 20 is mainly to control the temperature increase or decrease of the cleaning liquid for the wafers, and when heating the cleaning liquid, it is necessary to ensure that the protective shell 104 of the cleaning tank 20 will not soften and deform due to the excessively high heating temperature, under normal circumstances, starting two semiconductor refrigeration chips can meet the temperature regulation requirements of the cleaning liquid for the wafers. Therefore, taking the refrigeration chip module 101 including two semiconductor refrigeration chips as an example, of course, the refrigeration chip module 101 can also include at least three semiconductor refrigeration chips. For application scenarios where the target temperature of the cleaning liquid is less than a certain value, only two semiconductor refrigeration chips can be started, that is, the two semiconductor refrigeration chips are controlled to be in a working state. Specifically, the at least two semiconductor refrigeration chips in the above-mentioned refrigeration chip module 101 include: a first semiconductor refrigeration chip and a second semiconductor refrigeration chip;

[0048] Among them, the first sheet in the first semiconductor refrigeration sheet is arranged on the outer wall of the cleaning tank 20, the second sheet in the first semiconductor refrigeration sheet is thermally connected to the first sheet in the first semiconductor refrigeration sheet, the first sheet in the second semiconductor refrigeration sheet is thermally connected to the second sheet in the first semiconductor refrigeration sheet, and the second sheet in the second semiconductor refrigeration sheet is thermally connected to the first sheet in the second semiconductor refrigeration sheet and is close to the protective shell 104.

[0049] Specifically, when the cleaning liquid in the cleaning tank 20 is heated and controlled (i.e., the current temperature measured by the first temperature measuring device 103 is lower than the target temperature), a positive voltage can be applied to the first plate in the first semiconductor refrigeration chip and a negative voltage can be applied to the second plate in the first semiconductor refrigeration chip, so that the junction temperature difference between the first plate and the second plate in the first semiconductor refrigeration chip is generated, so that the first plate in the first semiconductor refrigeration chip becomes a hot surface and generates heat, thereby heating the cleaning liquid in the cleaning tank 20. At the same time, a positive voltage can be applied to the first plate in the second semiconductor refrigeration chip and a negative voltage can be applied to the second plate in the second semiconductor refrigeration chip, so that the junction temperature difference between the first plate and the second plate in the second semiconductor refrigeration chip is generated, so that the first plate in the second semiconductor refrigeration chip becomes a hot surface and generates heat. Since the second plate in the first semiconductor refrigeration chip and the first plate in the second semiconductor refrigeration chip are thermally connected, therefore, The heat of the first sheet in the second semiconductor refrigeration sheet can be transferred to the second sheet in the first semiconductor refrigeration sheet by heat transfer to increase the temperature of the second sheet in the first semiconductor refrigeration sheet (that is, the second sheet in the first semiconductor refrigeration sheet is heated by increasing the temperature of the first sheet in the second semiconductor refrigeration sheet), and then through the junction temperature difference generated between the first sheet and the second sheet of the first semiconductor refrigeration sheet, the first sheet of the first semiconductor refrigeration sheet arranged on the outer wall of the cleaning tank 20 can reach a higher temperature, and then the cleaning liquid in the cleaning tank 20 reaches a higher temperature, and at this time the temperature of the first sheet of the first semiconductor refrigeration sheet is the sum of the temperature of the first sheet of the second semiconductor refrigeration sheet and the junction temperature difference of the first semiconductor refrigeration sheet, and the temperature of the first sheet of the first semiconductor refrigeration sheet can reach as high as the sum of the temperature of the second sheet in the second semiconductor refrigeration sheet and the maximum junction temperature difference of the first semiconductor refrigeration sheet.

[0050] At the same time, since the second sheet of the second semiconductor refrigeration sheet is a cold surface at this time, the temperature of the second sheet of the second semiconductor refrigeration sheet close to the protective housing 104 is much lower than the temperature of the first sheet of the first semiconductor refrigeration sheet, and the temperature difference between the first sheet of the first semiconductor refrigeration sheet and the second sheet of the second semiconductor refrigeration sheet is the sum of the junction temperature difference of the first semiconductor refrigeration sheet and the junction temperature difference of the second semiconductor refrigeration sheet. For example, assuming that the junction temperature difference of the first semiconductor refrigeration sheet is 70° and the junction temperature difference of the second semiconductor refrigeration sheet is 60°, when the temperature of the first sheet of the first semiconductor refrigeration sheet reaches 140°C, the temperature of the second sheet of the first semiconductor refrigeration sheet is 70°C. 0°, at this time, the temperature of the first plate in the second semiconductor refrigeration plate needs to be controlled at about 70°C. When the temperature of the first plate in the second semiconductor refrigeration plate is controlled at 70°C, since the junction temperature difference of the second semiconductor refrigeration plate is 60°, the temperature of the second plate of the second semiconductor refrigeration plate will be maintained at about 10°C. Therefore, even if the cleaning liquid in the cleaning tank 20 needs to be heated to a higher temperature (that is, the temperature of the first plate of the first semiconductor refrigeration plate is higher), the protective shell 104 of the cleaning tank 20 can be maintained at a lower temperature (that is, the temperature of the second plate of the second semiconductor refrigeration plate is lower) by utilizing the sum of the junction temperature differences of the two semiconductor refrigeration plates.

[0051] Specifically, by controlling the electrode polarity and power applied to the semiconductor refrigeration plate in the refrigeration plate module 101 through the control module 102, in addition to controlling the heating of the cleaning liquid in the cleaning tank 20, the cleaning liquid in the cleaning tank 20 can also be controlled to cool (i.e., the current temperature measured by the first temperature measuring device 103 is greater than the target temperature), that is, the temperature of the heated cleaning liquid can be controlled to drop. In a specific implementation, the control module 102 can first control the power applied between the first and second plates in the first semiconductor refrigeration plate, and control the power applied between the first and second plates in the second semiconductor refrigeration plate, thereby reducing the temperature of the first plate in the first semiconductor refrigeration plate and the temperature of the first plate in the second semiconductor refrigeration plate. Then, by switching the polarity of the power applied between the first and second plates of the second semiconductor refrigeration plate, the voltage applied to the first plate of the second semiconductor refrigeration plate is changed from a positive voltage to a negative voltage, that is, the first plate of the second semiconductor refrigeration plate is changed from a hot surface to a cold surface, thereby making the first semiconductor refrigeration plate The heat of the second sheet in the first semiconductor refrigeration plate is transferred to the first sheet of the second semiconductor refrigeration plate by heat transfer, that is, the second sheet in the first semiconductor refrigeration plate is cooled by the first sheet of the second semiconductor refrigeration plate, and then the temperature of the first sheet in the first semiconductor refrigeration plate is lowered by the junction temperature difference of the first semiconductor refrigeration plate, thereby achieving the effect of cooling the cleaning liquid in the cleaning tank 20. Since the temperature is controlled by heat transfer, there is no need to rely entirely on power to control the temperature, so the purpose of reducing power consumption can be achieved, and since heat transfer and power are used at the same time, controllable temperature control can be achieved, thereby making the temperature control more precise.

[0052] In specific implementation, although the first plate in the first semiconductor refrigeration plate is arranged on the outer wall of the cleaning tank 20 and can directly heat the cleaning liquid in the cleaning tank 20, considering that the specific heat capacity of the cleaning liquid will change during the heating process and the influence of factors such as environmental changes, the temperature of the first plate in the first semiconductor refrigeration plate is often not directly equal to the temperature of the cleaning liquid in the cleaning tank 20. Therefore, in order to ensure the accuracy of temperature control, the first temperature measuring device 103 can be used to measure the current temperature of the cleaning liquid in the cleaning tank 20 in real time, and the current temperature is transmitted to the control module 102, so that the control module 102 controls the first polarity applied to the first plate in the semiconductor refrigeration plate, the second polarity applied to the second plate in the semiconductor refrigeration plate, and the power applied between the first plate and the second plate according to the current temperature and the target temperature of the cleaning liquid, thereby realizing precise control of the temperature of the cleaning liquid in the cleaning tank 20.

[0053] Furthermore, considering that the junction temperature difference and heat transfer principle of the second semiconductor refrigeration chip can be utilized to cool the second chip in the first semiconductor refrigeration chip to achieve the purpose of reducing power consumption, and considering that when the temperature of the semiconductor refrigeration chip is too high, if the electrode polarity of the first chip and the second chip in the second semiconductor refrigeration chip is directly switched, the protective housing 104 may be subjected to excessively high temperature and deformed. Based on this, the above-mentioned control module 102 is further specifically configured to adjust the power applied to the first semiconductor refrigeration chip and the power applied to the second semiconductor refrigeration chip based on the actual temperature measured by the second temperature measuring device 105 when the actual temperature measured by the second temperature measuring device 105 is greater than or equal to the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the second semiconductor refrigeration chip;

[0054] When the actual temperature measured by the second temperature measuring device 105 is less than the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the second semiconductor refrigeration chip, switching the first polarity applied to the first chip in the second semiconductor refrigeration chip and the second polarity applied to the second chip, so that the first chip in the second semiconductor refrigeration chip reduces the temperature of the second chip in the first semiconductor refrigeration chip by heat transfer;

[0055] When the current temperature of the cleaning liquid reaches the second preset value, the power applied between the first plate and the second plate in the first semiconductor refrigeration plate is adjusted to make the current temperature of the cleaning liquid reach the target temperature.

[0056] Specifically, for the case where each refrigeration chip module 101 includes two semiconductor refrigeration chips, that is, the refrigeration chip module 101 includes a first semiconductor refrigeration chip and a second semiconductor refrigeration chip, correspondingly, the above-mentioned first preset value is the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the second semiconductor refrigeration chip; wherein, in a specific implementation, the refrigeration chip module 101 may include only the first semiconductor refrigeration chip and the second semiconductor refrigeration chip, or the refrigeration chip module 101 may include not only the first semiconductor refrigeration chip and the second semiconductor refrigeration chip, but also a third semiconductor refrigeration chip, etc., but according to actual needs, only two semiconductor refrigeration chips need to be started; specifically, if the second temperature measuring device 105 If the actual temperature measured between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate is greater than or equal to the difference between the maximum heat-resistant temperature of the protective shell 104 and the junction temperature difference of the second semiconductor refrigeration plate, it is necessary to first adjust the power applied to the first semiconductor refrigeration plate and the power applied to the second semiconductor refrigeration plate so that the temperature between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate reaches the allowable temperature range, that is, the actual temperature measured by the second temperature measuring device 105 is less than the difference between the maximum heat-resistant temperature of the protective shell 104 and the junction temperature difference of the second semiconductor refrigeration plate, and then the electrode polarity applied to the second semiconductor refrigeration plate can be switched, that is, within the range where the polarity of the second semiconductor refrigeration plate is allowed to be switched, the first polarity of the first plate and the second polarity of the second plate in the second semiconductor refrigeration plate are switched so that the first plate in the second semiconductor refrigeration plate changes from a hot surface to a cold surface, and the temperature of the second plate in the first semiconductor refrigeration plate is reduced by heat transfer, thereby achieving the effect of reducing power consumption.

[0057] Specifically, after switching the electrode polarity applied to the second semiconductor refrigeration plate, the above Figure 1The second plate in the second semiconductor refrigeration plate shown in the figure changes from a cold surface to a hot surface, and the first plate in the second semiconductor refrigeration plate changes from a hot surface to a cold surface, so that the temperature of the first plate in the second semiconductor refrigeration plate is reduced, thereby reducing the temperature of the second plate in the first semiconductor refrigeration plate by heat transfer, and then lowering the temperature of the first plate in the first semiconductor refrigeration plate through the junction temperature difference of the first semiconductor refrigeration plate, so that the current temperature of the cleaning fluid reaches a second preset value, wherein the second preset value may be not fixed, for example, the second preset value may be the current temperature of the cleaning fluid after a preset time period since the electrode polarity of the second semiconductor refrigeration plate is switched, that is, after a preset time period has passed since the electrode polarity of the second semiconductor refrigeration plate is switched, it is determined that the current temperature has reached the second preset value; the second preset value may also be It is fixed, for example, a temperature threshold is set in advance, and the current temperature is compared with the temperature threshold to determine whether the current temperature reaches the second preset value; further, if the second preset value is greater than the target temperature, it is necessary to reduce the power applied between the first plate and the second plate in the first semiconductor refrigeration plate so that the current temperature of the cleaning fluid reaches the target temperature; if the second preset value is less than the target temperature, it is necessary to increase the power applied between the first plate and the second plate in the first semiconductor refrigeration plate so that the current temperature of the cleaning fluid reaches the target temperature, that is, if the current temperature of the cleaning fluid does not reach the target temperature after heat transfer, it is also possible to adjust the power applied between the first plate and the second plate in the first semiconductor refrigeration plate so that the current temperature of the cleaning fluid reaches the target temperature.

[0058] Furthermore, after cooling the cleaning liquid in the cleaning tank 20, the cleaning liquid can also be heated on the basis of the cooling. Specifically, the control module 102 switches the first polarity applied to the first plate in the second semiconductor refrigeration plate and the second polarity applied to the second plate, so that the first plate in the second semiconductor refrigeration plate increases the temperature of the second plate in the first semiconductor refrigeration plate by heat transfer (that is, the first plate in the second semiconductor refrigeration plate changes from a cold surface to a hot surface). Then, by adjusting the power applied between the first plate and the second plate of the second semiconductor refrigeration plate, the temperature of the first plate in the second semiconductor refrigeration plate can be increased to be higher than the temperature of the second plate in the first semiconductor refrigeration plate. The temperature of the second plate in the first semiconductor refrigeration plate can be increased by heat transfer, and the temperature of the first plate in the first semiconductor refrigeration plate can be made higher by the junction temperature difference of the first semiconductor refrigeration plate, thereby increasing the temperature of the cleaning liquid. In this way, the temperature of the cleaning liquid in the cleaning tank 20 is increased by heat transfer, which can reduce the overall power consumption of the control device.

[0059] In the embodiment provided by the present application, the power applied to the first semiconductor refrigeration plate and the second semiconductor refrigeration plate is first adjusted to reduce the temperature between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate to a range allowing the electrode polarity of the second semiconductor refrigeration plate to be switched, and then the electrode polarity applied to the second semiconductor refrigeration plate is switched. This can not only lower the temperature of the first plate in the first semiconductor refrigeration plate by heat transfer, thereby cooling the cleaning liquid, but also make the temperature of the protective shell 104 within the allowable temperature range. If the temperature of the cleaning liquid has not reached the target temperature after heating or cooling the cleaning liquid by heat transfer, the power applied between the first plate and the second plate in the first semiconductor refrigeration plate is further adjusted to make the current temperature of the cleaning liquid reach the target temperature. That is, during heating, a cooling effect can be generated by switching the electrode polarity applied to the semiconductor refrigeration plate, and the cooling rate can be precisely controlled by adjusting the voltage (power regulation circuit), thereby making the temperature control accuracy higher and utilizing heat transfer to improve energy efficiency.

[0060] It should be noted that the above-mentioned refrigeration plate module 101 may include two semiconductor refrigeration plates, or may include multiple semiconductor refrigeration plates. In specific implementation, the refrigeration plate module 101 may be set to include multiple semiconductor refrigeration plates, and then according to the actual process requirements (that is, combined with the maximum target temperature of the cleaning liquid and the maximum heat-resistant temperature of the protective shell 104), it is decided to start two semiconductor refrigeration plates or start at least three semiconductor refrigeration plates (that is, using the junction temperature difference of two or at least three semiconductor refrigeration plates to reduce the temperature of the second plate in the semiconductor refrigeration plate close to the protective shell 104, thereby ensuring that when the current temperature of the cleaning liquid reaches the maximum target temperature, the protective shell 104 can still not exceed the maximum heat-resistant temperature), wherein the number of semiconductor refrigeration plates that need to be started (that is, the target number) is positively correlated with the maximum target temperature and negatively correlated with the maximum heat-resistant temperature of the protective shell 104, which can diversify the use scenarios of the cleaning liquid temperature control device; specifically, the above-mentioned control module 102 is specifically used based on the cleaning liquid The maximum value of the target temperature and the maximum heat-resistant temperature of the protective shell 104 are used to determine the target number of semiconductor refrigeration plates that need to be started, and the target number of semiconductor refrigeration plates close to the outer wall of the cleaning tank 20 are determined as target semiconductor refrigeration plates (for example, semiconductor refrigeration plate 1, semiconductor refrigeration plate 2, and semiconductor refrigeration plate 3 in the refrigeration plate module 101 are arranged in sequence from the outer wall of the cleaning tank 20 to the protective shell 104. If the target number is determined to be 2, semiconductor refrigeration plate 1 and semiconductor refrigeration plate 2 are controlled to be in a working state). Then, according to the current temperature and target temperature of the cleaning fluid in the wafer cleaning equipment, the first polarity applied to the first plate in the target semiconductor refrigeration plate, the second polarity applied to the second plate in the target semiconductor refrigeration plate, and the power applied between the first plate and the second plate are controlled. Among them, the specific implementation process of controlling the electrode polarity and power applied to the first plate and the second plate in at least three semiconductor refrigeration plates can refer to the specific control process for two semiconductor refrigeration plates, which will not be repeated here.

[0061] Furthermore, considering that heat needs to be transferred between the second sheet in the first semiconductor refrigeration sheet and the first sheet in the second semiconductor refrigeration sheet through heat transfer, and when the heat transfer tends to be stable, the second sheet in the first semiconductor refrigeration sheet and the first sheet in the second semiconductor refrigeration sheet need to be maintained at the same temperature to make the temperature control of the semiconductor refrigeration sheet more precise, therefore, in order to improve the heat conduction effect of the first sheet and the second sheet connected thermally conductively in each semiconductor refrigeration sheet, and to improve the heat conduction effect between the first sheet of one semiconductor refrigeration sheet and the second sheet of the other semiconductor refrigeration sheet in two adjacent semiconductor refrigeration sheets connected thermally conductively, the first sheet and the second sheet in each semiconductor refrigeration sheet are bonded by a thermally conductive adhesive, and the first semiconductor refrigeration sheet and the second semiconductor refrigeration sheet are bonded by a thermally conductive adhesive, that is, the second sheet in the first semiconductor refrigeration sheet and the first sheet in the second semiconductor refrigeration sheet are bonded by a thermally conductive adhesive.

[0062] In this embodiment, the second sheet in the first semiconductor refrigeration sheet is bonded to the first sheet in the second semiconductor refrigeration sheet by a thermally conductive adhesive with good thermal conductivity, so as to achieve better heat transfer effect and thus make the temperature control of the semiconductor refrigeration sheet more precise.

[0063] Furthermore, considering that the temperature of the cleaning liquid in the cleaning tank 20 can be flexibly controlled by switching the polarity of the electrodes applied to the semiconductor refrigeration chips and adjusting the power applied to the semiconductor refrigeration chips, thereby achieving the effect of heating or cooling the cleaning liquid, in order to further improve the flexibility of switching the polarity of the electrodes applied to the multiple semiconductor refrigeration chips and further improve the flexibility of adjusting the power applied to the multiple semiconductor refrigeration chips, based on this, the control module 102 includes: at least two power polarity switching circuits, at least two power adjustment circuits and a central control circuit;

[0064] The first plate of each semiconductor refrigeration plate is connected to the power supply through a power polarity switching circuit and a power regulation circuit; the second plate of each semiconductor refrigeration plate is connected to the power supply through another power polarity switching circuit and another power regulation circuit.

[0065] The central control circuit is respectively connected to the first temperature measuring device 103, at least two power polarity switching circuits and at least two power regulating circuits;

[0066] The above-mentioned central control circuit is used to control the first polarity applied to the first sheet and the second polarity applied to the second sheet through the power polarity switching circuit according to the current temperature and target temperature of the cleaning liquid, and to control the power applied between the first sheet and the second sheet through the power regulation circuit.

[0067] Specifically, still taking the refrigeration module 101 including the first semiconductor refrigeration plate and the second semiconductor refrigeration plate as an example, the first semiconductor refrigeration plate and the second semiconductor refrigeration plate in the refrigeration module 101 are respectively connected to different power polarity switching circuits and different power regulation circuits. Specifically, Figure 4 As shown, the above-mentioned control module 102 includes: a first power supply polarity switching circuit 1021, a second power supply polarity switching circuit 1022, a first power regulation circuit 1023, a second power regulation circuit 1024 and a central control circuit 1045; wherein, the first semiconductor refrigeration plate of the refrigeration plate module 101 is connected to the power supply 107 through the first power supply polarity switching circuit 1021 and the first power regulation circuit 1023, and the second semiconductor refrigeration plate of the refrigeration plate module 101 is connected to the power supply 107 through the second power supply polarity switching circuit 1022 and the second power regulation circuit 1024; and the central control circuit 1045 is respectively connected to the first temperature measuring device 103, the first power supply polarity switching circuit 1021, the second power supply polarity switching circuit 1022, the first power regulation circuit 1023 and the second power regulation circuit 1024.

[0068] Specifically, the above-mentioned central control circuit 1045 can be a circuit with temperature detection, polarity switching control and power regulation control functions. Correspondingly, the above-mentioned central control circuit 1045 is used to receive the current temperature of the cleaning liquid measured by the first temperature measuring device 103, and based on the difference between the current temperature of the cleaning liquid and the target temperature, control the first power supply polarity switching circuit 1021 to switch the first polarity applied to the first sheet in the first semiconductor refrigeration plate and the second polarity applied to the second sheet, and calculate the power required to be adjusted by the first power regulation circuit 1023, and then adjust the power applied to the first semiconductor refrigeration plate; and control the second power supply polarity switching circuit 1022 to switch the first polarity applied to the first sheet in the second semiconductor refrigeration plate and the second polarity applied to the second sheet, and calculate the power required to be adjusted by the second power regulation circuit 1024, and then adjust the power applied to the second semiconductor refrigeration plate.

[0069] Furthermore, if there are multiple cooling plate modules 101, Figure 5As shown, taking three refrigeration chip modules 101 as an example, the specific circuit structure of the control device is explained. The first semiconductor refrigeration chip in the first refrigeration chip module 101, the first semiconductor refrigeration chip in the second refrigeration chip module 101, and the first semiconductor refrigeration chip in the third refrigeration chip module 101 are connected in parallel and connected to the first power polarity switching circuit 1021 and the first power regulation circuit 1023, and the first plate and the second plate in each first semiconductor refrigeration chip are connected in series; and the second semiconductor refrigeration chip in the first refrigeration chip module 101, the second semiconductor refrigeration chip in the second refrigeration chip module 101, and the second semiconductor refrigeration chip in the third refrigeration chip module 101 are connected in parallel and connected to the second power polarity switching circuit 1022 and the second power regulation circuit 1024, and the first plate and the second plate in each second semiconductor refrigeration chip are connected in series. Furthermore, the second plate in the first semiconductor refrigeration chip in each refrigeration chip module 101 is bonded to the first plate of the second semiconductor refrigeration chip in its respective module using a thermally conductive adhesive with good thermal conductivity.

[0070] In the embodiment provided in the present application, for each refrigeration plate module 101, a separate power polarity switching circuit and a power regulation circuit are designed for each semiconductor refrigeration plate in the refrigeration plate module 101. The central controller can be used to achieve separate control of multiple semiconductor refrigeration plates in the refrigeration plate module 101, thereby flexibly controlling the temperature of the cleaning liquid in the cleaning tank 20, and realizing flexible switching between heating and cooling functions, thereby making the temperature control more precise.

[0071] Furthermore, considering that when controlling the temperature of the cleaning liquid in the cleaning tank 20, it is necessary to adjust the voltage applied between the first and second sheets in the semiconductor refrigeration sheet to adjust the DC voltage output to the semiconductor refrigeration sheet, thereby adjusting the power applied between the first and second sheets. Also, considering that the power supply is usually an AC power supply, in order to improve the stability of the power applied to the semiconductor refrigeration sheet by controlling the power regulation circuit, based on this, under the premise that the power supply 107 is an AC power supply, the control module 102 further includes: a rectifier and voltage stabilizing circuit, which is arranged between the power regulation circuit and the power supply 107;

[0072] The rectifier and voltage stabilization circuit is used to convert the AC power provided by the power supply 107 to obtain the required DC power and transmit the DC power to the power regulation circuit;

[0073] The power regulating circuit is used to regulate the magnitude of the DC voltage output to the semiconductor refrigeration plate, so as to regulate the magnitude of the power applied between the first plate and the second plate.

[0074] Among them, the above-mentioned rectification and voltage stabilization circuit may include: a transformer, a rectification circuit and a voltage stabilization circuit; the above-mentioned power supply 107 may be an AC power supply circuit; specifically, the above-mentioned rectification and voltage stabilization circuit converts the AC power provided by the power supply 107 into the DC power required for heating the cleaning liquid in the cleaning tank 20 (that is, the DC power required by the semiconductor refrigeration plate), and transmits the DC power to the power regulation circuit, so that the power regulation circuit adjusts the magnitude of the DC voltage output to the semiconductor refrigeration plate under the control of the central control circuit 1045, and then adjusts the power applied between the first plate and the second plate in the semiconductor refrigeration plate.

[0075] In the embodiment provided in the present application, by setting a rectifier and voltage stabilization circuit between the power regulation circuit and the power supply 107, the alternating current provided by the power supply 107 can be converted into the direct current required by the semiconductor refrigeration plate, and the size of the direct current can be adjusted by the power regulation circuit to adjust the power applied between the first plate and the second plate in the semiconductor refrigeration plate, thereby achieving precise control of the temperature of the semiconductor refrigeration plate.

[0076] In a specific embodiment, after adding a second temperature measuring device, the second temperature measuring device can be directly connected to the central control circuit 1045 in the control device, in order to further improve the temperature measurement accuracy of the first temperature measuring device 103 and the second temperature measuring device 105, and to improve the control flexibility of the central control circuit 1045 on multiple power polarity switching circuits and multiple power regulation circuits, such as Figure 6 As shown, the central control circuit 1045 may include: a first control circuit 10451 and a second control circuit 10452, wherein the first temperature measuring device 103 is connected to the first control circuit 10451, and the first semiconductor refrigeration plate is connected to the first control circuit 10451 through the first power polarity switching circuit 1021 and the first power regulation circuit 1023; the second temperature measuring device 105 is connected to the second control circuit 10452, and the second semiconductor refrigeration plate is connected to the second control circuit 10452 through the second power polarity switching circuit 1022 and the second power regulation circuit 1024; one end of the rectifier and voltage stabilizing circuit 106 is connected to the first power regulation circuit 1023 and the second power regulation circuit 1024, and the other end is connected to the power supply 107.

[0077] Specifically, considering that the temperature of the protective housing 104 may be too high after switching the polarity of the semiconductor refrigeration plate, it is necessary to first determine whether to allow the switching of the first polarity applied to the first plate in the semiconductor refrigeration plate and the second polarity applied to the second plate based on the actual temperature measured by the second temperature measuring device 105. The specific implementation process of the electrode polarity switching and power adjustment of the semiconductor refrigeration plate refers to the above content and will not be repeated here.

[0078] Specifically, the above-mentioned first control circuit 10451 is used to receive the current temperature of the cleaning fluid measured by the first temperature measuring device 103, and based on the difference between the current temperature of the cleaning fluid and the target temperature, control the first power supply polarity switching circuit 1021 to switch the first polarity applied to the first sheet in the first semiconductor refrigeration plate and the second polarity applied to the second sheet, and calculate the power required to be adjusted by the first power regulation circuit 1023, and then adjust the power applied to the first semiconductor refrigeration plate; correspondingly, the above-mentioned second control circuit 10452 is used to receive the actual temperature between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate measured by the second temperature measuring device 105, and based on the actual temperature and the maximum heat resistance temperature of the protective shell, control the second power supply polarity switching circuit 1022 to switch the first polarity applied to the first sheet in the second semiconductor refrigeration plate and the second polarity applied to the second sheet, and calculate the power required to be adjusted by the second power regulation circuit 1024, and then adjust the power applied to the second semiconductor refrigeration plate.

[0079] Specifically, in the cooling process of the cleaning liquid in the cleaning tank 20, the polarity of the electrode applied to the first semiconductor refrigeration plate can be switched so that the first plate of the first semiconductor refrigeration plate changes from the hot surface to the cold surface, thereby directly cooling the cleaning liquid. At this time, since the second plate of the first semiconductor refrigeration plate changes from the cold surface to the hot surface, if the temperature of the first plate of the first semiconductor refrigeration plate is high before the polarity switching, the temperature of the second plate of the first semiconductor refrigeration plate will also be high after the polarity switching, thereby raising the temperature of the first plate of the second semiconductor refrigeration plate through heat transfer, and then raising the temperature of the second plate of the second semiconductor refrigeration plate, thereby causing the temperature of the protective housing 104 to be too high. Therefore, after the polarity switching, the temperature of the second plate of the second semiconductor refrigeration plate cannot exceed the maximum heat-resistant temperature of the protective housing 104.

[0080] Specifically, before switching the polarity, it can be determined whether to switch the first polarity applied to the first sheet in the semiconductor refrigeration chip and the second polarity applied to the second sheet based on the actual temperature and the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the semiconductor refrigeration chip close to the protective housing. In response to the situation where the cleaning liquid is cooled by switching the electrode polarity of the first sheet and the second sheet in the first semiconductor refrigeration chip, for example, before switching the polarity, if the actual temperature between the first semiconductor refrigeration chip and the second semiconductor refrigeration chip is greater than or equal to the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the semiconductor refrigeration chip close to the protective housing, That is, the actual temperature measured by the second temperature measuring device 105 is greater than or equal to the difference between the maximum heat-resistant temperature of the protective shell 104 and the junction temperature difference of the semiconductor refrigeration plate close to the protective shell. After switching the polarity, the temperature of the second plate in the first semiconductor refrigeration plate will increase, which will cause the temperature of the second plate in the first semiconductor refrigeration plate to be greater than the maximum heat-resistant temperature of the protective shell 104, which will affect the protective shell 104. Therefore, before switching the polarity, the actual temperature between the first semiconductor refrigeration plate and the second semiconductor refrigeration plate is less than the difference between the maximum heat-resistant temperature of the protective shell 104 and the junction temperature difference of the semiconductor refrigeration plate close to the protective shell.

[0081] Specifically, for the cooling process of the cleaning liquid in the cleaning tank 20, the polarity of the electrode applied to the second semiconductor refrigeration plate can be switched to make the first plate of the second semiconductor refrigeration plate become a cold surface, and the temperature of the second plate in the first semiconductor refrigeration plate can be lowered by heat transfer, so as to lower the temperature of the first plate in the first semiconductor refrigeration plate through the junction temperature difference of the first semiconductor refrigeration plate, thereby cooling the cleaning liquid. At this time, the temperature of the first plate in the second semiconductor refrigeration plate (that is, the actual temperature measured by the second temperature measuring device 105) must be at least less than the difference between the maximum heat resistance temperature of the protective shell 104 and the junction temperature difference of the semiconductor refrigeration plate close to the protective shell.

[0082] In the embodiment provided by the present application, a second temperature measuring device 105 is added between the second plate of the first semiconductor refrigeration plate and the first plate of the second semiconductor refrigeration plate, so that the control device can judge whether to switch the first polarity applied to the first plate of the semiconductor refrigeration plate and the second polarity applied to the second plate based on the actual temperature measured by the second temperature measuring device 105. Therefore, when the cleaning liquid is cooled by switching the polarity, the protective shell 104 of the cleaning tank 20 will not be affected by the increase in temperature of the semiconductor refrigeration plate close to the protective shell 104, and the temperature control can be made more precise.

[0083] By adopting the technical solution of the embodiment of the present application, a refrigeration plate module is set on the outer wall of the cleaning tank, and then the control module controls the electrode polarity of the first plate and the second plate applied to the semiconductor refrigeration plate, as well as the power applied between the first plate and the second plate based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank, so as to flexibly control the temperature of the cleaning liquid in the cleaning tank. This not only can achieve the effect of heating the cleaning liquid, but also can achieve the effect of reducing the temperature of the cleaning liquid from high temperature to low temperature, thereby achieving flexible switching of heating and cooling functions, and making temperature control more precise; and because a certain temperature difference will be generated between the first plate and the second plate when the semiconductor refrigeration plate is in working state, this can play the effect of cooling the protective shell of the cleaning tank, thereby preventing the problem of heat deformation of the protective shell caused by the excessive heating temperature of the cleaning liquid in the cleaning tank.

[0084] In summary, specific embodiments of the present subject matter have been described. Other embodiments are within the scope of the appended claims. In some cases, the actions recited in the claims can be performed in a different order and still achieve the desired results. Furthermore, the processes depicted in the accompanying drawings do not necessarily require the specific order shown or sequential order to achieve the desired results. In certain embodiments, multitasking and parallel processing may be advantageous.

[0085] The above is a device for controlling the temperature of the cleaning liquid in the wafer cleaning equipment provided in the embodiment of the present application. Based on the same idea, the embodiment of the present application also provides a wafer cleaning equipment.

[0086] like Figure 7 As shown, the wafer cleaning equipment includes: a cleaning tank 20 and a device 10 for controlling the temperature of the cleaning liquid in the wafer cleaning equipment;

[0087] Among them, the refrigeration plate module 101 in the control device 10 is arranged on the outer wall of the cleaning tank 20, at least two semiconductor refrigeration plates are arranged in sequence between the outer wall of the cleaning tank 20 and the protective shell 104, and the first temperature measuring device 103 is arranged in the cleaning tank 20.

[0088] The wafer cleaning equipment of the embodiment of the present application realizes flexible control of the temperature of the cleaning liquid in the cleaning tank by arranging a refrigeration plate module on the outer wall of the cleaning tank, and then controlling the electrode polarity of the first plate and the second plate applied to the semiconductor refrigeration plate, and the power applied between the first plate and the second plate based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank through the control module. This not only achieves the effect of heating the cleaning liquid, but also can reduce the cleaning liquid from high temperature to low temperature, thereby achieving flexible switching of heating and cooling functions, and making temperature control more precise; and because a certain temperature difference will be generated between the first plate and the second plate when the semiconductor refrigeration plate is in working state, this can play the effect of cooling and protecting the protective shell of the cleaning tank, thereby preventing the problem of heat deformation of the protective shell caused by the excessively high heating temperature of the cleaning liquid in the cleaning tank.

[0089] It should be noted that the control device 10 for the temperature of the cleaning liquid in the wafer cleaning equipment is based on the above Figures 1 to 6 The control device shown, therefore the specific implementation of this embodiment can refer to the specific implementation of the control device for the temperature of the cleaning liquid in the aforementioned wafer cleaning equipment, and the repeated parts will not be repeated.

[0090] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0091] In the description of the embodiments of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the invented product is usually placed when in use. They are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the embodiments of the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0092] In the description of the embodiments of the present application, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in the embodiments of the present application based on the specific circumstances.

[0093] Finally, it should be noted that the embodiments of the present application are described above in conjunction with the accompanying drawings to illustrate the technical solutions of the embodiments of the present application. However, the embodiments of the present application are not limited to the above-mentioned specific implementation methods, and the protection scope of the embodiments of the present application is not limited thereto. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Although the embodiments of the present application are described in detail with reference to the above-mentioned embodiments, those skilled in the art should understand that any person skilled in the art can modify or easily conceive of changes to the technical solutions described in the above-mentioned embodiments within the technical scope disclosed in the embodiments of the present application, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not deviate from the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application. They should all be included in the protection scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application should be based on the protection scope of the claims.

Claims

1. A device for controlling the temperature of a cleaning liquid in a wafer cleaning device, characterized in that: The control device includes: a refrigeration plate module, a control module and a first temperature measuring device; wherein, A plurality of cooling fin modules are attached to the outer wall of the cleaning tank of the wafer cleaning equipment, each cooling fin module includes at least two semiconductor cooling fins thermally connected in sequence, and each semiconductor cooling fin includes a first fin body and a second fin body; the first fin body and the second fin body are respectively connected to the control module, and the first fin body and the second fin body of each semiconductor cooling fin are connected in series and then in parallel in their respective control modules; The first temperature measuring device is used to measure the current temperature of the cleaning liquid in the cleaning tank and transmit the current temperature to the control module; The control module is used to control the first polarity applied to the first plate in the semiconductor refrigeration plate, the second polarity applied to the second plate in the semiconductor refrigeration plate, and the power applied between the first plate and the second plate according to the current temperature and the target temperature of the cleaning liquid.

2. The control device according to claim 1, characterized in that The control module includes: at least two power polarity switching circuits, at least two power regulation circuits and a central control circuit, and each of the refrigeration plate modules includes a first semiconductor refrigeration plate and a second semiconductor refrigeration plate; The first semiconductor refrigeration plate of each refrigeration plate module is connected to the power supply through one power polarity switching circuit and one power regulating circuit; the second semiconductor refrigeration plate of each refrigeration plate module is connected to the power supply through another power polarity switching circuit and another power regulating circuit; The central control circuit is respectively connected to the first temperature measuring device, at least two of the power polarity switching circuits and at least two of the power regulating circuits; The central control circuit is used to control the first polarity applied to the first sheet and the second polarity applied to the second sheet through the power polarity switching circuit according to the current temperature and the target temperature, and to control the power applied between the first sheet and the second sheet through the power regulation circuit.

3. The control device according to claim 1, characterized in that A protective shell is further provided on the outside of the cleaning tank, and a second temperature measuring device is further provided between at least two of the semiconductor refrigeration sheets; The second temperature measuring device is used to measure the actual temperature of the first plate of the semiconductor refrigeration plate close to the protective housing, and transmit the actual temperature to the control module; The control module is also used to determine whether to switch the first polarity applied to the first plate in the semiconductor refrigeration plate and the second polarity applied to the second plate based on the actual temperature and the maximum heat resistance temperature of the protective shell, and switch the first polarity and the second polarity if the judgment result is yes, or adjust the power applied between the first plate and the second plate if the judgment result is no.

4. The control device according to claim 3, characterized in that The control module is further configured to, when the actual temperature is greater than or equal to a first preset value, adjust the power applied between the first plate and the second plate based on the actual temperature until the actual temperature is less than the first preset value; and determine to switch the first polarity and the second polarity when the actual temperature is less than the first preset value; The first preset value is related to the difference between the maximum heat-resistant temperature and the junction temperature difference of the semiconductor refrigeration chip close to the protective housing.

5. The control device according to claim 3, characterized in that The at least two semiconductor refrigeration chips include: a first semiconductor refrigeration chip and a second semiconductor refrigeration chip; Among them, the first sheet of the first semiconductor refrigeration sheet is arranged on the outer wall of the cleaning tank, the second sheet of the first semiconductor refrigeration sheet is thermally connected to the first sheet of the first semiconductor refrigeration sheet, the first sheet of the second semiconductor refrigeration sheet is thermally connected to the second sheet of the first semiconductor refrigeration sheet, and the second sheet of the second semiconductor refrigeration sheet is thermally connected to the first sheet of the second semiconductor refrigeration sheet and is close to the protective shell.

6. The control device according to claim 5, characterized in that The control module is further specifically configured to adjust the power applied to the first semiconductor refrigeration chip and the power applied to the second semiconductor refrigeration chip based on the actual temperature when the actual temperature is greater than or equal to the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor refrigeration chip; When the actual temperature is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor refrigeration chip, switching the first polarity applied to the first plate in the second semiconductor refrigeration chip and the second polarity applied to the second plate, so that the first plate in the second semiconductor refrigeration chip reduces the temperature of the second plate in the first semiconductor refrigeration chip by heat transfer; When the current temperature reaches a second preset value, the power applied between the first plate and the second plate in the first semiconductor refrigeration plate is adjusted so that the current temperature reaches the target temperature.

7. The control device according to claim 5, characterized in that A plurality of refrigeration fin modules are arranged in an array on the outer wall of the cleaning tank.

8. The control device according to claim 5, characterized in that: The first sheet and the second sheet are bonded together by a thermally conductive adhesive, and the first semiconductor refrigeration sheet and the second semiconductor refrigeration sheet are bonded together by the thermally conductive adhesive.

9. The control device according to claim 2, characterized in that: The power supply is an AC power supply, and the control module further includes: a rectifier and voltage stabilizing circuit, which is arranged between the power regulation circuit and the power supply; The rectifier and voltage stabilization circuit is used to convert the alternating current provided by the power supply to obtain the required direct current, and transmit the direct current to the power regulation circuit; The power regulating circuit is used to regulate the magnitude of the DC voltage output to the semiconductor refrigeration chip, so as to regulate the magnitude of the power applied between the first chip and the second chip.

10. A wafer cleaning device, characterized in that: The wafer cleaning equipment comprises: a cleaning tank and a cleaning liquid temperature control device according to any one of claims 1 to 9.

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