Substrate processing system and management method of substrate processing device

Abstract

Provided is a management method for a substrate processing system and a substrate processing device. By managing information related to film removal from the peripheral portion of a substrate, the substrate processing device can be used stably for a long period of time. The system comprises: a measurement processing step for measuring the film removal width based on an image obtained by the camera unit capturing the peripheral portion of the substrate processed based on a substrate processing process; a production step for producing a management list that associates a set value of the film removal width, a measured value of the film removal width measured by the measurement processing step, and information on the time when the measurement result is obtained; an analysis step for analyzing the state of substrate processing based on the produced management list; and a notification step for providing a specified notification to a user based on the analysis result of the analysis step.

Description

[0001] This application is a divisional application of the Chinese invention patent application with the application date of March 10, 2017, application number 201710141991.9, and invention name “Management method of substrate processing device and substrate processing system”. Technical Field

[0002] The invention relates to a substrate processing device for processing substrates such as semiconductor wafers by using a processing liquid. Background Art

[0003] A substrate processing system having a single-chip substrate processing device is known. As such a system, there is a system having a substrate processing device having the following functions: holding a substrate having a film formed on the surface of the substrate and rotating the substrate about a vertical axis, supplying a processing liquid from a nozzle to the peripheral portion of the substrate to remove the film at the peripheral portion. In Patent Document 1, a photographing mechanism is provided in the substrate processing system to photograph the peripheral portion of the substrate processed by the substrate processing device, and based on the photographed image, it is determined whether the film at the peripheral portion has been properly removed.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2013-168429 Summary of the invention

[0005] Problem that the invention aims to solve

[0006] However, the technology of Patent Document 1 only discloses a method of determining film removal in a one-time maintenance operation, and does not disclose a management method based on long-term operation of the substrate processing apparatus.

[0007] The present invention is to solve the above-mentioned problem and manage information related to film removal at the peripheral portion of a substrate, thereby enabling stable operation of a substrate processing apparatus for a long period of time.

[0008] Solutions for solving problems

[0009] In order to solve the above-mentioned problems, the substrate processing device in the management method of the substrate processing device of the present invention comprises: a rotating holding part, which holds the substrate and rotates the substrate; a processing liquid supplying part, which supplies a processing liquid for removing a film on the peripheral portion of the substrate; and a photographing part, which photographs the peripheral portion of the substrate. The management method of the substrate processing device comprises: a process acquisition step, which acquires a substrate processing process including a set value of a removal width of the film; a measurement processing step, which measures the removal width of the film based on a captured image obtained by the photographing part photographing the peripheral portion of the substrate processed based on the substrate processing process; a production step, which produces a management list that associates the set value of the removal width of the film, the measured value of the removal width of the film measured by the measurement processing step, and the time information of obtaining the measurement result; an analysis step, which analyzes the status of the substrate processing based on the produced management list; and a notification step, which makes a specified notification to the user according to the analysis result of the analysis step.

[0010] In order to solve the above-mentioned problems, the present invention provides a substrate processing system, including a substrate processing device for performing a process of removing a film from the peripheral portion of a substrate, a camera device for photographing the peripheral portion of the substrate, a measurement processing device for performing a measurement process based on the photographed image, and an information processing device for managing information related to the measurement process. The substrate processing system is characterized in that the substrate processing device comprises: a rotating holding portion, which holds the substrate and rotates the substrate; and a processing liquid supply portion, which supplies a processing liquid for removing the film to the peripheral portion of the substrate, the measurement processing device comprises a control portion, which measures the removal width of the film based on the photographed image obtained by the camera device, and the information processing device comprises a control portion, which creates a management list that associates processing process information including a set value for the removal width of the film with measurement processing result information including a measured value for the removal width of the film and information on the time when the measurement result is obtained, and analyzes the status of substrate processing based on the created management list.

[0011] In order to solve the above-mentioned problems, the present invention provides a management method for a substrate processing device, wherein the substrate processing device comprises: a rotating holding part, which holds a substrate and rotates the substrate; a processing liquid supplying part, which supplies a processing liquid for removing a film on the peripheral portion of the substrate; and a photographing part, which photographs the peripheral portion of the substrate. The management method for the substrate processing device is characterized in that it comprises the following steps: a process acquisition step, which acquires a substrate processing process including a set value of a removal width of the film; a measurement processing step, which measures the removal width of the film based on a captured image obtained by the photographing part photographing the peripheral portion of the substrate after being processed based on the substrate processing process; a production step, which produces a management list that associates the set value of the removal width of the film, the measured value of the removal width of the film measured by the measurement processing step, and the time information of obtaining the measurement result; and an analysis step, which analyzes the status of substrate processing based on the produced management list.

[0012] Effects of the Invention

[0013] The present invention has an effect of enabling a substrate processing apparatus to be operated stably for a long period of time by managing information related to film removal at the peripheral portion of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0015] Figure 2 It is a longitudinal sectional side view of the processing unit involved in the embodiment of the present invention.

[0016] Figure 3 It is a plan view showing a cover member of the processing unit, a lifting mechanism of the cover member, and a processing liquid supply portion.

[0017] Figure 4 Yes Figure 2 The cross-sectional view is enlarged and shown in detail near the outer periphery of the wafer on the right side.

[0018] Figure 5 It is a cross-sectional view showing the detailed structure of the imaging device.

[0019] Figure 6 It is a diagram showing a schematic configuration of a measurement processing system according to an embodiment.

[0020] Figure 7 It is a diagram showing the overall flow of substrate processing and measurement processing executed by the substrate processing system and the measurement processing system in the first embodiment.

[0021] Figure 8 This is a diagram specifically illustrating the overall flow of chemical solution processing in this embodiment.

[0022] Fig. 9 1 is a diagram for explaining the relationship between the state of liquid on the wafer W and the arrangement of the imaging device in the chemical liquid processing according to the present embodiment.

[0023] Fig.10 FIG. 2 is a diagram showing an imaging angle of view of the wafer W by the imaging device.

[0024] Fig.11 1 is a diagram for explaining the arrangement relationship among the imaging device, the processing unit, and the wafer W.

[0025] Fig.12 This is a flowchart for explaining the operation of measuring the cutting width and the eccentricity.

[0026] Fig.13 is a schematic diagram of a second captured image captured according to the second capturing condition.

[0027] Fig.14 is a schematic diagram of a first captured image captured according to a first capturing condition.

[0028] Fig.15 The state of eccentricity of the wafer W with respect to the holding portion will be described.

[0029] Fig.16 Graph showing the measurement results of the cut width corresponding to the rotation angle of the wafer W.

[0030] Fig.17 This is a diagram showing an example of a display screen showing measurement result information displayed on a display device.

[0031] Fig.18 It is a diagram for explaining the structure of the holding position adjustment mechanism.

[0032] Fig.19 It is a diagram for explaining the overall flow in the second embodiment.

[0033] Fig. 20 This is a flowchart illustrating the holding position adjustment process in the second embodiment.

[0034] Fig.21 It is a diagram for explaining the operation of the holding position adjustment mechanism.

[0035] Fig. 22 This is a diagram for explaining the image processing process.

[0036] Fig.23 This is a flowchart illustrating the imaging setting process in the third embodiment.

[0037] Fig.24 This is a diagram showing a list of information on measurement processing results.

[0038] Fig.25 This is a diagram for explaining how to analyze and effectively utilize measurement processing results.

[0039] Fig.26 It is a diagram for explaining the overall flow in the fourth embodiment.

[0040] Fig. 27 This is a flowchart for explaining the analysis process of the measurement results in the fourth embodiment.

[0041] Fig.28 It is a plan view showing a cover member, a lifting mechanism of the cover member, and a processing liquid supply portion of a processing unit according to a fifth embodiment.

[0042] Fig.29 FIG. 1 is a diagram for explaining the positional relationship among the imaging device, the wafer W, and the liquid on the wafer W. FIG.

[0043] Fig.30 The diagram explains the arrangement relationship among the imaging device, the processing unit, and the wafer W in the imaging area, and the liquid adhesion state of the chemical solution or the cleaning solution.

[0044] Fig.31 This is a flowchart for explaining the chemical liquid processing performed along with imaging in the fifth embodiment.

[0045] Description of Reference Numerals

[0046] 4: control device; 16: processing unit; 250A: processing liquid supply unit; 250B: processing liquid supply unit; 270: imaging device; 601: measurement processing device; 602: information processing device. DETAILED DESCRIPTION

[0047] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0048] In this embodiment, the configuration of a substrate processing system, the configuration of a measurement processing system, and the operations thereof are mainly described.

[0049] Figure 1 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined below, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0050] like Figure 1 As shown, the substrate processing system 1 includes an import / export station 2 and a processing station 3. The import / export station 2 and the processing station 3 are disposed adjacent to each other.

[0051] The import / export station 2 includes a carrier placement unit 11 and a conveyor unit 12. A plurality of carriers C are placed on the carrier placement unit 11, and the plurality of carriers C accommodate a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state.

[0052] The conveying unit 12 is disposed adjacent to the carrier placement unit 11, and includes a substrate conveying device 13 and an interface 14 inside the conveying unit 12. The substrate conveying device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and uses the wafer holding mechanism to convey the wafer W between the carrier C and the interface 14.

[0053] The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided so as to be arranged on both sides of the conveying unit 15.

[0054] The conveying unit 15 includes a substrate conveying device 17 therein. The substrate conveying device 17 includes a wafer holding mechanism for holding the wafer W. The substrate conveying device 17 is movable in the horizontal direction and the vertical direction and is rotatable about the vertical axis, and conveys the wafer W between the interface 14 and the processing unit 16 using the wafer holding mechanism.

[0055] The processing unit 16 performs predetermined substrate processing on the wafer W conveyed by the substrate conveying device 17 .

[0056] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

[0057] The program may be a program recorded in a computer-readable storage medium or a program installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0058] In the substrate processing system 1 configured as described above, first, the substrate conveyor 13 of the input / output station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate conveyor 17 of the processing station 3 and is input into the processing unit 16.

[0059] After the wafer W input into the processing unit 16 is processed by the processing unit 16, the wafer W is output from the processing unit 16 by the substrate conveyor 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate conveyor 13.

[0060] Next, the detailed structure of the processing unit 16 of this embodiment is described. The processing unit 16 corresponds to the substrate processing device of the present invention, and performs the following substrate processing: a chemical solution is supplied to the surface of a circular substrate, i.e., a wafer W, on which a semiconductor device is formed, and an unnecessary film formed on the peripheral portion of the wafer W is removed.

[0061] like Figure 2 and Figure 3 As shown, the processing unit 16 includes: a wafer holding part 210, which holds the wafer W in a horizontal position so that it can rotate around a vertical axis; a cup body 220, which surrounds the wafer W held by the wafer holding part 210 to receive the processing liquid scattered from the wafer W; an annular cover member 230, which covers the peripheral portion of the upper surface of the wafer W held by the wafer holding part 210; a lifting mechanism (moving mechanism) 240, which lifts and lowers the cover member 230; and processing liquid supply parts 250A, 250B, which supply processing fluid to the wafer W held by the wafer holding part 210.

[0062] The cup body 220, the wafer holding part 210, the cover member 230 and the like, which are structural members of the above-mentioned processing unit 16, are housed in a housing 260. A clean air introduction unit 261 for taking in clean air from the outside is provided near the top of the housing 260. In addition, an exhaust port 262 for exhausting the atmosphere in the housing 260 is provided near the bottom surface of the housing 260. Thus, a downward flow of clean air flowing from the upper part of the housing 260 to the lower part is formed in the housing 260. An input / output port 264 opened and closed by a shutter 263 is provided on one side wall of the housing 260. The conveying arm of the wafer conveying mechanism (not shown) provided outside the housing 260 can pass through the input / output port 264 while holding the wafer W. The wafer holding part 210 is configured as a vacuum suction cup in the shape of a circular plate, and its upper surface is a wafer adsorption surface. The wafer holding part 210 can be rotated at a desired speed by a rotation drive mechanism (not shown). The wafer holding part 210 corresponds to the rotation holding part of the present invention.

[0063] like Figure 2 As shown, the cup 220 is a bottomed annular member provided to surround the outer circumference of the wafer holding portion 210. The cup 220 has the following functions: receiving and recovering the chemical solution that is supplied to the wafer W and then scattered outside the wafer W, and discharging the chemical solution to the outside.

[0064] A small gap (e.g., about 2 mm to 3 mm in height) is formed between the lower surface of the wafer W held by the wafer holding portion 210 and the upper surface 212 of the inner peripheral side portion 211 of the cup body 220 facing the lower surface of the wafer W. Two gas ejection ports 213 and 214 are opened on the upper surface 212 facing the wafer W. The two gas ejection ports 213 and 214 extend continuously along the concentric large diameter circle and small diameter circle, respectively, and eject N gas radially outward and obliquely upward toward the lower surface of the wafer W. 2 Gas (heated nitrogen gas) is supplied to the annular gas diffusion space 215 from a gas introduction line (not shown) formed in the inner peripheral side portion 211 of the cup body 220. 2 Gas, N 2 The gas is heated in the gas diffusion space 215 , flows so as to diffuse in the circumferential direction, and is ejected from the gas ejection ports 213 , 214 .

[0065] A drainage path 216 and an exhaust path 217 are connected to the outer peripheral side of the cup body 220. An annular guide plate 218 extends radially outward from the outer peripheral portion of the inner peripheral side portion 211 of the cup body 220 (a position below the periphery of the wafer W). In addition, an outer peripheral wall 219 is provided on the outer peripheral side of the cup body 220. The outer peripheral wall 219 receives the fluid (liquid droplets, gas, and a mixture thereof, etc.) that flies outward from the wafer W through its inner peripheral surface and guides the fluid downward. The mixed fluid of gas and liquid droplets that flows into a position below the guide plate 218 is separated, and the liquid droplets are discharged from the drainage path 216 and the gas is discharged from the exhaust path 217.

[0066] The cover member 230 is a ring-shaped member configured to face the upper surface peripheral portion of the wafer W held by the wafer holding portion 210 during processing. The cover member 230 rectifies the gas flowing near the upper surface peripheral portion of the wafer W and introduced into the cup body 220 and increases the flow rate of the gas to prevent the processing liquid scattered from the wafer W from adhering to the upper surface of the wafer W again.

[0067] The cover member 230 has an inner peripheral surface 231, which extends from the top to the bottom in the vertical direction and is inclined toward the radial outside as it approaches the wafer W. In addition, the cover member 230 has a horizontal lower surface 232 facing the wafer W, and a gap in the vertical direction is formed between the horizontal lower surface 232 and the upper surface of the wafer W. The outer peripheral edge of the cover member 230 is located radially outward from the outer peripheral end (edge) We of the wafer W (refer to Figure 3 ) In addition, the peripheral portion to be cleaned is, for example, a region extending about 3 mm radially inward from the outer peripheral end, and is a range covered by the horizontal lower surface of the cover member 230.

[0068] In the top view Figure 3 2 shows a state where the wafer W is held by the wafer holding portion 210 and the cover member 230 is located at the processing position. Figure 3 In FIG. 5 , the outer peripheral end We of the wafer W covered and hidden by the cover member 230 is indicated by a dashed line. In addition, the inner peripheral edge of the cover member 230 is indicated by a reference numeral 5 e.

[0069] like Figure 2 and Figure 3 As shown, the lifting mechanism 240 for lifting the cover member 230 has a plurality of (four in this example) sliders 241 mounted on a support body 233 supporting the cover member 230, and guide pillars 242 extending in the vertical direction through each slider 241. A cylinder motor (not shown) is connected to each slider 241. By driving the cylinder motor, the slider 241 moves up and down along the guide pillars 242, thereby enabling the cover member 230 to be lifted and lowered. The cup body 220 is supported by an elevator 243 that constitutes a part of the cup lifting mechanism (not shown). When the elevator 243 is moved from Figure 2 When the state shown is lowered, the cup body 220 is lowered, and the Figure 1 The substrate transport device 17 and the wafer holding unit 210 are shown to transfer the wafer W.

[0070] Next, refer to Figure 2 , Figure 3 as well as Figure 4 The processing liquid supply units 250A and 250B are described below. Figure 3 As shown in FIG. 1 , the processing liquid supply unit 250A includes a liquid nozzle 251 for spraying a mixed solution of ammonia, hydrogen peroxide, and pure water, i.e., SC-1 liquid, and a cleaning nozzle 252 for spraying a cleaning liquid (DIW (pure water) in this example). In addition, the processing liquid supply unit 250A includes a nozzle 252 for spraying a drying gas (N in this example). 2 The processing liquid supply unit 250B has a liquid nozzle 254 for ejecting HF liquid, a cleaning nozzle 255 for ejecting cleaning liquid, and a gas nozzle 256 for ejecting drying gas.

[0071] The processing liquid supply unit 250A corresponds to the first processing liquid supply unit of the present invention, and the liquid ejected from the chemical liquid nozzle 251 and the cleaning nozzle 252 corresponds to the first processing liquid of the present invention. In addition, the processing liquid supply unit 250B corresponds to the second processing liquid supply unit of the present invention, and the liquid ejected from the chemical liquid nozzle 254 and the cleaning nozzle 255 corresponds to the second processing liquid of the present invention. In addition, the types of the first processing liquid and the second processing liquid are not limited to the types disclosed in this embodiment, and the positional relationship between the first processing liquid supply unit and the second processing liquid supply unit can also be reversed.

[0072] like Figure 3 and Figure 4 As shown in (a) of FIG. 2 , the nozzles 251 to 253 of the processing liquid supply unit 250A are accommodated in the recess 234 formed on the inner peripheral surface of the cover member 230. Each nozzle (251 to 253) is as shown in FIG. Figure 4 The processing liquid supply unit 250A sprays the processing fluid obliquely downward as shown by arrow A in (b), and in a manner such that the spraying direction shown by arrow A has a component in the rotation direction Rw of the wafer W. In addition, the processing liquid supply unit 250A has a driving mechanism not shown in the figure, and each nozzle (251-253) can move forward and backward in the direction of arrow B to adjust the position so that the liquid is attached to the optimal position on the wafer W when being sprayed. The processing liquid supply unit 250B also has the same structure as the processing liquid supply unit 250A.

[0073] Figure 2 The control device 4 shown controls the operation of all functional components of the processing unit 16 (for example, a rotation drive mechanism not shown, an elevating mechanism 240 , a wafer holding unit 210 , various processing fluid supply mechanisms, etc.).

[0074] The imaging device 270 corresponds to the imaging unit of the present invention and is used to perform the measurement process described later on the wafer W. The imaging device 270 is fixed to the cover member 230 and is arranged so that the opening for imaging is located vertically above the peripheral edge of the wafer W (in the Z-axis direction).

[0075] use Figure 5 The structure of the imaging device 270 in this embodiment is explained in the cross-sectional view shown. The imaging device 270 includes an imaging function unit 501 and a light guide unit 502. The imaging function unit 501 is used to image the wafer W with the aid of the light guide unit 502. The light guide unit 502 is used to guide the illumination light to the surface of the wafer W and to guide the reflected light of the wafer W with respect to the illumination light (hereinafter referred to as the optical image) to the imaging function unit 501. The light guide unit 502 is installed on the side surface of the cover member 230 with the aid of the mounting surface AA. The cover member 230 has Figure 2 The cross-sectional shape shown in FIG. 2 is different from that shown in FIG. 2 , but the area corresponding to the mounting surface AA of the light guide 502 in the circumferential direction is cut away. However, the cross-sectional shape of the whole formed by the cover member 230 and the light guide 502 together is similar to that shown in FIG. Figure 2 The cross-sectional shape of the cover member 230 shown is consistent in profile.

[0076] The shooting function unit 501 includes a shooting sensor 503. In the present embodiment, the shooting sensor 503 is a CCD sensor having an effective pixel area of ​​approximately 2 million pixels consisting of 1600 pixels × 1200 lines, and only generates a signal corresponding to a brightness signal according to the light receiving level. A shooting optical mechanism 504 having at least a focus adjustment function is provided in front of the surface of the shooting sensor 503. The shooting optical mechanism 504 includes a lens group, and the position of the lens can be changed to adjust the focus. In the present embodiment, an adjustment member 505 is provided for the user to directly manually adjust the lens position to adjust the focus. The adjustment member 505 is provided at a position higher than the position of the cover member 230 and the shooting function unit 501, so that the user of the device can easily perform manual operation.

[0077] A mirror 506 is provided in front of the optical axis direction of the photographing optical mechanism 504. The photographing device 270 is provided with an opening facing vertically upward (in the Z-axis direction) of the wafer W, so that the optical image of the surface of the wafer W as the photographing object faces vertically upward LZ. The mirror 506 transforms the direction of the optical image into the horizontal direction LX so that the direction of the optical image coincides with the optical axis of the photographing sensor 503 and the photographing optical mechanism 504.

[0078] The lighting chamber 507 is used to form irradiation light for irradiating the wafer W, and an LED lighting unit 508 and a mirror 509 are provided inside the lighting chamber 507. The LED lighting unit 508 generates irradiation light for irradiating the wafer W. The mirror 509 reflects the irradiation light from the LED lighting unit 508 vertically downward, and on the other hand, transmits the optical image toward the LZ. The opening 510 has a rectangular cross-sectional shape, and guides the irradiation light reflected at the mirror 509 of the lighting chamber 507 downward. In addition, the cross section of the opening 510 can also be formed into a circular shape.

[0079] The glass window 511 has the same cross-sectional shape as the opening 510 at the upper end, and guides the irradiation light entering from the opening 510 to the surface of the wafer W as the imaging object. In addition, the reflected light from the surface of the wafer W is guided in the LZ direction as an optical image. The lower surface 512 of the glass window 511 is the lower end of the imaging device 270, and has a plane facing the peripheral portion of the upper surface of the wafer W, and the height of the plane is the same as that of the wafer W. Figure 2 The height of the lower surface 232 of the cover member 230 is the same. In addition, as described above, in order to be consistent with the shape of the cover member 230, the outer side surface 513 of the glass window 511 is further recessed from the upper side of the outer side surface 513 at the height position of the outer bottom surface of the cover member 230. Therefore, the glass window 511 is formed to be L-shaped as a whole when observed in cross section.

[0080] When the processing liquid supply parts 250A and 250B supply the chemical liquid and the cleaning liquid to the wafer W, the atmosphere including the chemical liquid and water passes through the area below the opening 510 of the imaging device 270. The glass window 511 has the function of blocking the atmosphere from entering the opening 510 in order to prevent such atmosphere from entering the housing of the imaging device 270 and corroding the internal structure. The glass window 511 is a transparent member, so although it blocks the atmosphere, it allows the irradiation light and the reflected light from the wafer surface to pass.

[0081] The inner cover member 514 is used to prevent liquid from adhering to the glass window 511 and has Figure 2 The shape of the inner peripheral surface 231 of the cover member 230 shown in the figure is the same shape. In this way, the lower surface 512 of the glass window 511, the outer side surface 513, and the inner cover member 514 form a contour shape that is the same as the cross-section of the cover member 230, thereby suppressing the airflow that is intended to pass from the cover member 230 to the cup body 220 from being turbulent due to the shape of the shooting device 270 when performing liquid treatment and cleaning treatment.

[0082] In the shooting function unit 501, the shooting control unit 515 controls the shooting action of the shooting device 270 and performs image processing on the shot image. The optical image received by the shooting sensor 503 is photoelectrically converted, and after being converted into an analog signal corresponding to the brightness signal, it is sent to the shooting control unit 515. The shooting control unit 515 performs A / D conversion on the received analog signal to generate a digital signal representing the brightness, and performs prescribed image processing to form a shot image of one frame. In addition, the shooting control unit 515 can also form a moving image by continuously acquiring still image frames. The cable 516 is used to exchange control signals with an external device and send the shot image to the external device.

[0083] use Figure 6 The measurement processing system 600 in this embodiment is described below. This system includes the imaging device 270, a measurement processing device 601, an information processing device 602, and a control device 4.

[0084] If used Figure 5 As described, the imaging device 270 includes the imaging sensor 503, the imaging optical mechanism 504, the LED lighting unit 508, the imaging control unit 515, the cable 516, etc. As described later, the imaging control unit 515 can change the imaging conditions and perform imaging based on a control signal received from the measurement processing device 601 via the cable 516.

[0085] The measurement processing device 601 is a device that processes the image captured by the imaging device 270 to measure the cutout width, eccentricity, etc., which will be described later. The measurement processing device 601 includes at least a control unit 603 and a storage unit 604 in its housing.

[0086] The control unit 603 controls each block of the measurement processing device 601 and controls the operation of the imaging device 270. In addition, by executing the measurement processing program described later, calculations on the resection width and the eccentricity are performed. The storage unit 604 stores the measurement processing program described later and the image processing process described later executed by the control unit 603. In addition, the storage unit 604 temporarily stores the captured images received from the imaging device 270 via the cable 516, and stores the measurement results calculated by the control unit 603. The measurement processing device 601 can send and receive various information with the information processing device 602 and the control device 4 via the communication line 605.

[0087] The information processing device 602 can store the captured images and measurement results sent from the measurement processing device 601, and can send these information to the control device 4. The information processing device 602 has at least a control unit 606 and a storage unit 607 in its housing. The control unit 606 can control each block of the information processing device 602, and can also send various instructions to the measurement processing device 601. In addition, the control unit 606 also has a function of analyzing the measurement results. The storage unit 607 stores the captured images and measurement results sent from the measurement processing device 601. The information processing device 602 can send and receive various information with the measurement processing device 601 and the control device 4 via the communication line 605.

[0088] The control device 4 is as follows Figure 1 The control device 4 can control the entire substrate processing system 1 as shown, and can also operate in cooperation with the measurement processing device 601 and the information processing device 602. The control device 4 can send and receive various information with the measurement processing device 601 and the information processing device 602 via the communication line 605. In addition, the control device 4 is connected to an operating device 608 and a display device 609. The display device 609 displays the captured image and the result image received from the information processing device 602. The operating device 608 includes an input device such as a keyboard, a mouse, and a touch panel, and can select a wafer processing recipe that describes the processing to be performed on the wafer W that is the object of the measurement processing.

[0089] In this embodiment, each device constituting the measurement processing system 600 is housed inside the housing of the substrate processing system 1. However, the present invention is not limited to this example, and one or more devices may be configured in another housing, and the communication line 605 may be configured through a wired or wireless network. As an example, the system may be configured as follows: the information processing device 602 is configured in a housing separate from the substrate processing system 1, and the substrate processing system 1 can be remotely managed.

[0090] Next, use Figure 7The entire flow of substrate processing and measurement processing performed by the substrate processing system 1 and the measurement processing system 600 of this embodiment will be described. This processing operation is performed on 25 wafers W as a group, and this flowchart shows the processing operation of one wafer W in a group.

[0091] First, a wafer W is loaded into the processing unit 16 (S101). Here, the cover member 230 is positioned at a retracted position (relative to the position of FIG. 1 ) by the lifting mechanism 240. Figure 2 Then, the cup body 220 is lowered by the lifter 243 of the cup lifting mechanism. Then, the shutter 263 of the housing 260 is opened and the cup body 220 is lowered. Figure 1 The transport arm of the substrate transport device 17 shown enters the housing 260, so that the wafer W held by the transport arm of the substrate transport device 17 is located directly above the wafer holding part 210. Next, the transport arm is lowered to a position lower than the upper surface of the wafer holding part 210 to place the wafer W on the upper surface of the wafer holding part 210. Next, the wafer W is adsorbed by the wafer holding part 210. Thereafter, the empty substrate transport device 17 is withdrawn from the housing 260. Next, the cup body 220 is raised and returned to the Figure 2 and lower the cover member 230 to the position shown in FIG. Figure 2 Through the above process, the wafer input is completed and becomes Figure 2 Status shown.

[0092] Next, wafer processing is performed using a chemical solution or the like (S102). Details of the wafer processing in this embodiment will be described later.

[0093] Next, a measurement process is performed on the wafer W ( S103 ). Details of the measurement process in this embodiment will be described later.

[0094] Finally, the wafer W is output from the processing unit 16 (S104). Here, the cover member 230 is raised and located in the retreat position, and the cup body 220 is lowered. Next, the shutter 263 of the housing 260 is opened and the conveying arm of the substrate conveying device 17 is allowed to enter the housing 260, and the empty conveying arm is positioned below the wafer W held by the wafer holding portion 210, and then the conveying arm is raised, and the conveying arm receives the wafer W from the wafer holding portion 210 in a state where the adsorption of the wafer W is stopped. Thereafter, the conveying arm holding the wafer W is withdrawn from the housing 260. Through the above, a series of liquid treatments on a wafer W are completed.

[0095] Next, use Figure 8 The wafer processing performed in step S102 of this embodiment is specifically described with reference to the flowchart.

[0096] First, the first chemical liquid treatment is performed (S201). Here, the wafer W is rotated and N is ejected from the gas ejection ports 213 and 214 of the cup body 220. 2 The gas is used to heat the wafer W, especially the peripheral portion of the wafer W as the processing area, to a temperature suitable for the chemical liquid treatment (e.g., about 60° C.). After the wafer W is sufficiently heated, the chemical liquid (SC1) is supplied from the chemical liquid nozzle 251 of the processing liquid supply unit 250A to the peripheral portion of the upper surface (device forming surface) of the wafer W while the wafer W is kept rotating, so as to remove unnecessary films located at the peripheral portion of the upper surface of the wafer.

[0097] Next, the first cleaning process (S202) is performed. Here, after the liquid treatment is performed for a predetermined time, the liquid spraying from the liquid nozzle 251 is stopped, and the cleaning liquid (DIW) is supplied to the peripheral portion of the wafer W from the cleaning nozzle 252 of the processing liquid supply unit 250A to perform the cleaning process. The liquid and reaction products remaining on the upper and lower surfaces of the wafer W are washed away by this cleaning process. In addition, here, the same drying process as step S205 described later can also be performed.

[0098] Then, the second liquid treatment (S203) is performed. Here, the liquid treatment for removing waste that could not be removed in the first liquid treatment is performed on the wafer W. The wafer W is rotated and heated in the same manner as the first liquid treatment, and liquid (HF) is supplied from the liquid nozzle 254 of the processing liquid supply unit 250B to the peripheral portion of the upper surface (device forming surface) of the wafer W to remove unnecessary films located on the peripheral portion of the upper surface of the wafer.

[0099] Next, the second cleaning process is performed (S204). Here, after the chemical solution treatment is performed for a predetermined time, the rotation of the wafer W and the N gas ejection from the gas ejection ports 213 and 214 are continued. 2 The gas is ejected, the chemical liquid ejection from the chemical liquid nozzle 254 is stopped, and the cleaning liquid (DIW) is supplied to the peripheral portion of the wafer W from the cleaning nozzle 255 of the processing liquid supply unit 250B to perform a cleaning process. The chemical liquid and reaction products remaining on the upper and lower surfaces of the wafer W are washed away by this cleaning process.

[0100] Finally, a drying process is performed (S205). After the cleaning process is performed for a predetermined time, the rotation of the wafer W and the N gas ejection from the gas ejection ports 213 and 214 are continued. 2 The gas is ejected, the cleaning liquid is ejected from the cleaning nozzle 255, and the drying gas (N 2 Gas) is supplied to the peripheral portion of the wafer W for drying.

[0101] Next, refer to Fig. 9The relationship between the liquid state on the wafer W in the chemical liquid processing performed in step S102 and the arrangement of the imaging device 270 will be described.

[0102] First, the first chemical liquid process of discharging the first chemical liquid (SC-1 liquid) toward the wafer W in step S201 will be described.

[0103] like Fig. 9 As shown in (a), the wafer W is rotated in the first rotation direction R1. The rotation speed is, for example, 2000 rpm to 3000 rpm, and the first chemical liquid is supplied from the chemical liquid nozzle 251 to the peripheral portion of the upper surface of the wafer W. Fig. 9 In (a), the first chemical liquid present on (attached to) the upper surface of the wafer W is indicated by a mark 901. In this way, the first chemical liquid supplied to the arrival area 902 of the peripheral portion of the wafer W rotating in the first rotation direction R1 moves to the outside of the wafer W by the centrifugal force based on the rotation, and is then thrown out of the wafer W and scattered to the outside. The first chemical liquid scattered to the outside of the wafer W is discharged to the outside from the drainage path 216 via the inner peripheral surface of the outer peripheral wall 219 of the cup body 220.

[0104] The position 903 on the wafer W where the first chemical liquid is completely thrown out of the wafer W depends on parameters such as the speed of the first chemical liquid sprayed from the chemical liquid nozzle 251, the rotation speed of the wafer W, and the distance from the first chemical liquid arrival area 902 to the side end of the wafer W. For example, when the rotation speed is reduced, the chemical liquid is not easily thrown out by the centrifugal force, so the area where the chemical liquid exists increases as shown by the dotted line.

[0105] In step S202, the cleaning nozzle 252 and the cleaning liquid sprayed onto the wafer W also operate in the same manner. However, the cleaning liquid from the cleaning nozzle 252 reaches an area substantially the same as the area 902 where the first chemical liquid reaches, but is located slightly upstream in the rotation direction and toward the center of the wafer W. Therefore, the area on the upper surface of the wafer W where the first chemical liquid flows can be reliably cleaned by the cleaning liquid.

[0106] The second chemical liquid process of ejecting the second chemical liquid (HF) toward the wafer W in step S203 will be described.

[0107] like Fig. 9As shown in (b), the wafer W is rotated in a second rotation direction R2 opposite to the first rotation direction R1. The rotation speed is, for example, 2000 rpm to 3000 rpm, and the second liquid is supplied from the liquid nozzle 254 to the peripheral portion of the upper surface of the wafer W. As shown in the figure, the second liquid present on (attached to) the upper surface of the wafer W is indicated by the mark 904, and the second liquid supplied to the arrival area 905 shows the same action as the first liquid in step S201. In step S204, the cleaning nozzle 255 and the cleaning treatment liquid sprayed and reaching the wafer W also act in the same way as the cleaning nozzle 252.

[0108] As described above, by rotating the wafer W in opposite directions in steps S201 and S202 and steps S203 and S204, the regions of the first chemical solution 901 and the second chemical solution 904 present on the upper surface of the wafer W and the positions 903 and 906 where all the chemical solutions are thrown out can be adjusted. Here, the angle formed by connecting the processing liquid supply unit 250A and the processing liquid supply unit 250B and the center of the wafer W is denoted as “θ X ” degrees, and the angle formed by connecting the arrival area 902 and the position 903 with the center of the wafer W is denoted as “θ A ”, let the angle formed by connecting the arrival area 905 and the position 906 with the center of the wafer W be “θ B ” (refer to Fig. 9 (b). At this time, let θ be the relational expression for each angle. X +θ A +θ B <360 degrees. For example, when θ X = 60 degrees, by setting θ A <120 degrees, θ B <120 degrees to meet this condition, the positions 903 and 906 where the liquid is thrown out will not intersect on the circumference. In this way, it is possible to suppress the salts etc. generated by the reaction caused by the processing liquid thrown out from the wafer W mixing with each other inside the cup body 220.

[0109] In addition, the opening 510 is located upstream of the first chemical liquid and the cleaning liquid arrival area 902 on the wafer W in the first rotation direction R1, and the opening 510 is located upstream of the second chemical liquid and the cleaning liquid arrival area 905 on the wafer W in the second rotation direction R2. By arranging the opening 510 of the imaging device 270 in this way, it is possible to prevent the opening 510 from being adhered to by liquid during chemical liquid processing.

[0110] Fig.10 2 is a diagram showing the photographing angle of the wafer W of the photographing device 270. Fig.10 As shown, the imaging device 270 uses a rectangular area located at the periphery of the wafer W as an imaging angle of view 1001 .

[0111] In order to measure the cutting width and the eccentricity, the measurement processing device 601 uses an image cut out from the overall captured image of the shooting angle of view 1001. Specifically, the captured images of the five regions 1001a, 1001b, 1001c, 1001d and 1001e, which have been positionally adjusted along the boundary of the wafer W in the angle of view 1001 of the imaging device 270, are used. The size of the cut captured image is, for example, 320 pixels in the X-axis direction and 240 pixels in the Y-axis direction. In addition, in the present embodiment, as described later, two captured images are acquired under the first shooting condition and the second shooting condition for each shooting angle of view 1001, respectively.

[0112] use Fig.11 The configuration relationship between the imaging device 270, the processing unit 16 and the wafer W is described. As shown in the figure, the wafer W has a chamfer (round) at the peripheral portion, and a processing film is formed on the upper surface, and only the processing film at the peripheral portion is removed (cut off). In addition, it is assumed that the diameter of the wafer W is 300 mm, and there is no error in the circumferential direction.

[0113] When the camera 270 is properly set, the inner end (upper end) of the camera angle of view in the longitudinal (X-axis) direction of the camera 270 is located on the processing film of the wafer W, and the outer end (lower end) is located on the processing film of the wafer W. Figure 2 On the upper surface 212 of the inner peripheral side portion 211 shown. Therefore, in the captured image captured by the camera 270, there are a processing film area 1101, a cutting surface area 1102, a chamfered area 1103, and an upper surface area 1104 in order from the inner end (upper end) of the viewing angle. Here, the processing film area 1101 is an area where the formed processing film is not removed by the chemical solution and remains as it is. The cutting surface area 1102 is an area of ​​the plane in the area where the formed processing film is removed, which does not include the chamfered area formed on the peripheral end of the wafer W. The chamfered area 1103 is an area where the processing film is removed or the chamfer of the processing film is not formed initially. The upper surface area 1104 is an area formed in front of the peripheral edge of the wafer W.

[0114] Furthermore, the cut-out width is the width of an area where the process film does not exist (an area where the process film is removed or the process film is not initially formed) formed by the cut-out surface area 1102 and the chamfered area 1103 at the peripheral end of the wafer W and between the peripheral end of the process film and the peripheral end of the wafer W. In addition, the width of the cut-out surface area 1102 is referred to as the cut-out surface width, and the width of the chamfered area 1103 is referred to as the chamfer width.

[0115] Next, use Fig.12The control unit 603 of the measurement processing device 601 executes the measurement processing program stored in the storage unit 604, thereby realizing the measurement operation in this flowchart.

[0116] When the whole process transfers to step S103, the configuration relationship between the photographing device 270, the processing unit 16 and the wafer W has become Fig.11 Status shown.

[0117] First, the measurement processing device 601 sets the first imaging condition and the second imaging condition shown below as imaging conditions to be performed by the imaging device 270 (step S301 ). At this time, the wafer W is located at a predetermined rotation initial position.

[0118] Next, the wafer W is photographed under the first photographing condition (step S302). Here, first, the control unit 603 of the measurement processing device 601 sends a control instruction to the photographing device 270, so that the photographing device 270 performs a photographing action under the first photographing condition. The photographing control unit 515 that receives the control instruction controls the photographing sensor 503 and the LED lighting unit 508 in accordance with the received control instruction so that photographing is performed under the first photographing condition, thereby photographing. The photographing control unit 515 converts the signal obtained by photographing the photographing sensor 503 into a photographed image of a brightness signal of 1 frame, and sends the photographed image to the measurement processing device 601. The photographed image transmitted to the measurement processing device 601 is stored in the storage unit 604. Here, the content of the first photographing condition and the state of the actual photographed image will be described later.

[0119] After the imaging under the first imaging condition, the wafer W is continuously imaged under the second imaging condition (step S303). The operation here is the same as step S302, and the content of the second imaging condition and the state of the actual image will be described later.

[0120] Next, it is determined whether all the preset positions have been photographed (S304). In this embodiment, 360 shots are taken at the positions where the shots were taken in steps S302 and S303, rotating 1 degree at a time, so "yes" is determined only when all 360 positions have been photographed.

[0121] Here, since only the image capture at the position initially set in step S301 has been performed (step S304: No), the process moves to the rotation operation in step S305.

[0122] The control device 4 drives the rotation drive unit to rotate the wafer holding unit 210 , thereby rotating the held wafer W by 1 degree, and disposing the next imaging position right below the imaging device 270 ( S305 ).

[0123] After the rotation operation is completed, the process returns to step S302 and the same shooting operation and rotation operation are performed. After the above operation is performed 360 times, all positions are shot (step S304: "Yes"), so the process transfers to step S306 and image analysis processing is performed using 360 sets of first shot images and second shot images (S306). Then, as a result of the measurement, the excision width and the eccentricity are obtained (S307). The details of the image analysis processing will be described later.

[0124] In this embodiment, the control unit 603 sends the first captured image based on the first capturing condition, the second captured image based on the second capturing condition, and the cutout width to the information processing device 602 (S308). The information processing device 602 stores the received first captured image and second captured image in the storage unit 607.

[0125] Next, the details of the photographing operation and the image analysis processing in steps S302 to S306 are described.

[0126] The information measured in this embodiment is the cut width of the wafer W. Fig.11 The relationship between them can be calculated by the following calculation formulas (1) to (3).

[0127] Cut-off width [mm] = width of cut-off surface area 1102 [mm] + width of chamfered area 1103 [mm] Formula (1)

[0128] Here,

[0129] Width of the cut surface area 1102 [mm] = (position of the cut surface boundary 1110 [pixel] - position of the treated film boundary 1109 [pixel]) / scaling value [pixel / mm] ···Formula (2)

[0130] Width of chamfered area 1103 [mm] = (position of wafer peripheral end 1111 [pixel] - position of cut surface boundary 1110 [pixel]) / calibration value [pixel / mm] Formula (3)

[0131] In the above formulas (1) to (3), the so-called "position [pixel]" refers to the count value of the number of pixels in the horizontal direction from the inner end of the cropped image. In this embodiment, the number of pixels in the horizontal direction (X-axis direction) of the cropped image is 320, so the value of "position [pixel]" can be 1 to 320.

[0132] Here, it is assumed that the correspondence between the number of pixels of the image captured by the camera and the length [mm] of the wafer W on the plane where it is located has been measured and determined using a calibration wafer or the like. In this embodiment, the value of "calibration value" = 20 pixels / mm is stored in the storage unit 604 in advance.

[0133] In this embodiment, if Fig.10 As shown, five regions are extracted from one captured image, the excision widths are calculated for each region, and their average value is taken as the final excision width value for each region.

[0134] As shown in equations (1) to (3), the calculation of the excision width requires determining the three boundary positions of (a) the position of the excision surface boundary 1110, (b) the position of the treatment film boundary 1109, and (c) the position of the wafer peripheral edge 1111 based on the change in the brightness level of the pixels of the captured image (brightness edge amount). Here, the brightness edge amount can be obtained by using a method of obtaining a peak value based on the absolute value of the difference in brightness values ​​between adjacent pixels or a method of applying a known edge filter to the image.

[0135] The wafer W and each region 1101 to 1104 of the processing unit 16 of the present embodiment have reflection characteristics specific to their materials and reflection characteristics specific to their structures. When the irradiation light of the same illumination intensity generated by the LED lighting unit 508 is incident, for example, the reflection light level of the cut surface region 1102 is a higher reflection light level (bright gray) than the reflection light level (gray) of the processing film region 1101 due to the difference in material. On the other hand, the cut surface region 1102 and the chamfered region 1103 are made of the same material, but the chamfered region 1103 is inclined, so the reflection light level in the direction of the imaging sensor 503 is low (close to black).

[0136] The reflective surface of the upper surface area 1104 is relatively far away, so light attenuation occurs, but it also has a certain level of reflected light (gray close to black).

[0137] Therefore, as a result, the illumination level in the optical image of the light received by the imaging sensor 503 is from high to low in the order of the cut surface area 1102 , the processed film area 1101 , the upper surface area 1104 , and the chamfered area 1103 .

[0138] Thus, in this embodiment, when the illumination light of the same illumination intensity from the LED illumination unit 508 is used, the range of illumination intensity levels in the optical image is very wide, so that the imaging sensor 503 having a generally wide dynamic range cannot capture images in such a way that the illumination intensity levels of all regions are at appropriate brightness levels. Furthermore, the correct brightness edge cannot be calculated from the captured image that does not have an appropriate brightness level, and errors occur when determining the three boundary positions (a) to (c).

[0139] In this embodiment, the first shooting condition and the second shooting condition with different brightness are prepared in advance, and the shooting is performed twice using these conditions, thereby solving the above problem. For convenience, the second shooting condition and the second shot image are first described.

[0140] Regarding the second shooting condition, a shooting condition that emphasizes the intermediate illumination level is set so that a relatively bright shooting image can be obtained to accurately determine the position of (b) the process film boundary 1109. That is, when the illumination level of the optical image is converted into a brightness signal, a wide range of gradations appear in the illumination level of the process film region 1101 in the optical image and the illumination level of the cut surface region 1102. Specifically, for example, the adjustment can be made by setting the sensitivity of the CCD (for example, ISO sensitivity) or by setting the light receiving time of the CCD using an exposure adjustment mechanism (not shown).

[0141] Here, the second shooting condition emphasizes the middle illumination level, so the reproducibility of the low illumination level area is low. That is, the gradation of the illumination level of the upper surface area 1104 and the chamfered area 1103 is narrowed, so both areas appear as images of a color close to black.

[0142] exist Fig.13 A schematic diagram of the second captured image captured according to the second shooting condition is shown in . The color scale of the brightness signal level of the processing film area 1101 and the cut surface area 1102 is fully maintained, so that the change in the brightness level of the pixels in these two areas, that is, the detection of the brightness edge becomes easy, and the position of (b) the processing film boundary 1109 can be accurately determined. In addition, the position of (a) the cut surface boundary 1110 can also be accurately determined. On the other hand, the upper surface area 1104 and the chamfered area 1103 are both located at positions with low brightness signal values ​​(roughly black). Therefore, it is not easy to detect the brightness edge, and the position of (c) the wafer peripheral end 1111 cannot be determined.

[0143] In this embodiment, (c) the position of the wafer peripheral edge 1111 is determined based on a relatively dark first captured image captured under another imaging condition, namely, the first imaging condition.

[0144] Regarding the first shooting condition, a shooting condition that emphasizes low illumination levels is set. That is, when the illumination level of the optical image is converted into a brightness signal, a wide range of gradations appears in the illumination level of the chamfered area 1103 in the optical image. Specifically, for example, the adjustment can be made by setting the sensitivity (e.g., ISO sensitivity) of the CCD to a sensitivity higher than that of the second shooting condition, or by setting the light receiving time of the CCD to a time longer than that of the second shooting condition.

[0145] Here, the first imaging condition emphasizes low illumination levels, so the reproducibility of the region with intermediate illumination levels is low. That is, the gradation of illumination levels of the processed film region 1101 and the cut surface region 1102 is narrowed, so the image appears as a color close to white.

[0146] exist Fig.14 , a schematic diagram of the first captured image captured according to the first capturing condition is shown in FIG. The color scale of the brightness signal value of the upper surface area 1104 and the chamfered area 1103 is fully maintained, so that the detection of the brightness edge can be made easy, and the position of the (c) wafer peripheral edge 1111 can be accurately determined. On the other hand, the processing film area 1101 and the cut surface area 1102 are both located at positions with high brightness signal values ​​(roughly white). Therefore, it is not easy to detect the brightness edge, and the position of the (b) processing film boundary 1109 cannot be determined.

[0147] As described above, the first captured image based on the first capturing condition and the second captured image based on the second capturing condition can be used to accurately determine (a) the position of the resected surface boundary 1110 , (b) the position of the processed film boundary 1109 , and (c) the position of the wafer peripheral end 1111 .

[0148] The control unit 603 calculates the excision width by applying the above position information (a) to (c) in the above equations (1) to (3). The excision width is similarly calculated for the other cropped images 1000a, 1000b, 1000d, and 1000e, and the value obtained by averaging the values ​​of these widths is determined as the final excision width obtained based on the shooting angle of view 1001.

[0149] Next, use Fig.15 The eccentric state of the wafer W relative to the holding part 210 is described. When the substrate conveying device 17 places the wafer W on the wafer holding part 210, sometimes the center position WO of the wafer W is offset from the center position HO of the wafer holding part in the X-axis and Y-axis directions. This phenomenon is caused, for example, by insufficient adjustment of the substrate conveying device 17, wear of structural components caused by long-term use, etc. In this embodiment, the offset amount of the substrate relative to the center position HO that should be located is defined as the eccentricity amount WD.

[0150] exist Fig.15 1000a to 1000e show the positional relationship between the cutting area and the wafer W. Immediately after the substrate conveyor 17 places the wafer W offset on the wafer holding portion 210, the center position WO of the wafer W is located at a certain position on the ring 1501. Then, when the wafer W is rotated as indicated by the arrow, the center position WO of the wafer W will definitely pass through Fig.15 The positions of WO1 and WO2 on the X-axis.

[0151] When the imaging device 270 is fixedly mounted while rotating the wafer W having such an eccentricity as in the present embodiment, the phenomenon that the position of the wafer peripheral edge 1111 changes periodically occurs. When observed in the cutout regions of the images 1000a to 1000e, when the center of the wafer W is located at WO1, the wafer peripheral edge 1111 appears at position 1502 and takes a minimum value, and when the center of the wafer W is located at WO2, the wafer peripheral edge 1111 appears at position 1503 and takes a maximum value.

[0152] The difference between the center positions WO1 and WO2 is equal to the difference between the maximum and minimum values ​​of the wafer peripheral end 1111. Therefore, the eccentricity WD=(maximum value of the wafer peripheral end 1111-minimum value of the wafer peripheral end 1111) / 2 can be obtained as in Formula (4).

[0153] Fig.16 To express through Fig.12 FIG. 2 is a graph showing measurement results of the cut width corresponding to the rotation angle of the wafer W when the wafer W is rotated 360 degrees, obtained by the measurement process shown.

[0154] In this example, the wafer W is kept eccentric. Figure 7 The measurement result in the case of wafer processing in step S102. Similar to the wafer peripheral end 1111, the resection width also varies periodically according to the angle. In the present embodiment, the measurement processing device 601 determines the average value "Ave", the maximum value "Max" and the minimum value "Min" of the resection width based on the measurement result at 360. Here, when it can be assumed that the variation of the processing film boundary 1109 is so small as to be negligible relative to the periodic variation of the wafer peripheral end 1111 in the captured image at 360, the variation of the wafer peripheral end 1111 is dominant in the variation of the resection width. Therefore, it can be calculated as the eccentricity WD = (maximum value "Max" - minimum value "Min") / 2...Formula (5).

[0155] The measurement processing device 601 transmits information indicating the cut width and the eccentricity, that is, an average value “Ave”, a maximum value “Max”, and a minimum value “Min” at 360 degrees to the information processing device 602 .

[0156] The information processing device 602 generates information to be displayed on the display device 609 connected to the control device 4 based on the measurement result information received from the measurement processing device 601 .

[0157] Fig.17 17 is a diagram showing an example of a display screen 1700 showing measurement result information displayed on the display device 609. The process information window 1701 shows setting values ​​of the chemical treatment to be performed on the wafer W to be measured, such as the setting value of the cut width. In addition, the process information window 1701 also displays the film type of the wafer W to be processed.

[0158] The measurement result window 1702 displays the cutout width obtained as the measurement result, and in this case, the above-mentioned average value "Ave" is displayed. In addition, the eccentricity WD calculated by the above-mentioned equation (5) is also displayed.

[0159] The first image window 1703 and the second image window 1704 can respectively display a captured image obtained according to the first capturing condition and a captured image obtained according to the second capturing condition for confirmation.

[0160] The graph window 1705 is used, for example, to Fig.16 The various measurement results such as the change in the cut width according to the angle shown are visualized to confirm their characteristics.

[0161] The cut-off width obtained in this embodiment can be used as information for adjusting the processing liquid supply unit 250 of the processing unit 16, for example. The user of the system can make fine adjustments to the position of the chemical liquid nozzle 208, for example, based on the difference between the preset cut-off width and the cut-off width obtained by actual measurement. In addition, as described in the second embodiment, if the eccentricity is obtained, the holding position of the wafer W can also be adjusted.

[0162] As described above, according to the present embodiment, the opening 510 of the imaging device 270 is located at a position upstream of the arrival area 902 of the processing liquid in the wafer W in the first rotation direction R1. Thus, even if the imaging device 270 is arranged on the cover member 230 in a manner that allows the peripheral portion of the wafer W to be photographed while the wafer W is held, good photography can be performed without causing liquid adhesion to the imaging device 270. In addition, the imaging device 270 is installed by cutting off a portion of the cover member 230 so that the cross-section of the cover member 230 as a whole is the same as that of the cover member 230 at other positions. By making the shapes of the inner side surface and the lower surface the same in this way, good liquid processing can be performed without causing turbulence in the airflow around the imaging device 270.

[0163] <Modification 1 of the First Embodiment>

[0164] As a first modification of the above-described embodiment, two system configuration examples regarding focus adjustment will be described.

[0165] First, explain the operation Figure 5 The focus adjustment is performed by the adjustment member 505 of the imaging device 270 shown in the figure. The user can quickly perform the focus adjustment operation by checking the degree of focus on the wafer W through the captured image in real time. In this embodiment, the display device 609 displays the captured image.

[0166] Specifically, during the focus adjustment operation, the imaging control unit 515 also operates the imaging sensor 503 to continuously capture images of the wafer W at a frame rate of, for example, 5 fps, and transmits the images to the measurement processing device 601. The measurement processing device 601 processes the received continuous images so that the images can be displayed on the display device 609, and transmits the processed images to the control device 4. The control device 4, for example, Fig.17 The received captured image is displayed in the first image window 1703 or the second image window 1704. In this case, it is not necessary to integrate the display device 609 with the housing of the substrate processing system 1 in advance, which improves convenience. Therefore, it can also be configured as a movable terminal device connected to the substrate processing system 1 by wire or wirelessly.

[0167] The above is a focus adjustment operation performed manually, but the focus adjustment is performed using a sample wafer before measuring the actual cut width, and cannot be performed when the measurement process is actually performed on the wafer W to be processed.

[0168] As a second example, a case where the imaging device 270 is configured to have an autofocus function so that the focus adjustment can be automatically performed without manual operation will be described.

[0169] In this modification, Figure 5 The photographing optical mechanism 504 shown has an actuator (not shown) built in for automatically moving the lens group. The photographing control unit 515 is configured to be able to perform autofocus (AF) control based on a contrast method, and sends a control signal determined based on a photographed image obtained by the photographing sensor 503 to the actuator.

[0170] Specifically, the shooting control unit 515 sets the action mode of the shooting sensor 503 so that it can shoot animation at a rate of, for example, 5 fps. Fig.10 The AF evaluation values ​​indicating the blur degree of the image are obtained from the five cropped areas shown. Then, based on the AF evaluation values, the lens group of the photographing optical mechanism 504 is moved in a direction where the blur degree becomes smaller. This control is repeated for consecutive frames, and after it can be determined that the blur degree is minimized based on the AF evaluation values, it is determined to be in focus.

[0171] use Fig.12 (b) of this embodiment is used to illustrate the measurement process of this embodiment. Fig.12 The same processing steps in the flowchart (a) are marked with the same symbols, and the description is omitted here.

[0172] In the present embodiment, an AF operation is performed at each of the 360 ​​positions on the wafer W to bring the image into focus and then image capture is performed.

[0173] In step S311, the above-mentioned contrast-based AF control is performed. Then, in step S312, (a) actuator drive information, (b) lens position information, (c) time elapsed from the start of AF control until the focus state is reached, etc. are stored. After that, the process proceeds to the shooting operation of step S302 already described.

[0174] By performing the above control, it is possible to obtain captured images at all the capturing positions with good focus adjustment, so that the measurement process can be performed with high accuracy. In addition, by analyzing the AF information (a), (b), and (c) in step S312, it is also possible to obtain the characteristics of the wafer W. For example, when the above AF information is compared with Fig.16 In the case where the cut width example shown in also undergoes periodic changes corresponding to the angle, there is a possibility that the distance between the wafer W and the imaging device 270 varies periodically. Periodic changes in the distance indicate that there is a high possibility that the wafer W is warped (deformed), and in this case, control can also be performed so that the user is alerted through the display device 609.

[0175] <Modification 2 of the First Embodiment>

[0176] As a second variation of the above embodiment, the following description will be given of a method in which Figure 7 An example of measurement processing or wafer processing in the overall flow. Figure 7 The measurement result in step S103 may be as follows: Fig.16 Instead of such a smooth curve, it includes, for example, a plurality of small bumps and depressions that appear in units of several degrees (not shown). This phenomenon occurs especially when the processing film boundary 1109 is not fixed in the radial direction, which means that the processing film is not removed with the same width in the circumferential direction, and local film residue occurs. It is highly likely that the local film residue is not caused by insufficient precision in the nozzle position setting but is caused by insufficient execution time of the liquid treatment. Therefore, in the case where small bumps and depressions are generated in the measurement result of the excision width, control is performed to repeat the same liquid treatment again. As a result, a sufficient amount of liquid is supplied to the remaining film again, so that the film residue can be easily removed, so that the wafer W itself, which is the object of measurement, can also obtain a good processing result.

[0177] Specifically, in Figure 7 After the measurement processing in step S103 of the overall flow, the control unit 603 of the measurement processing device 601 performs Fig.16 The cut width is graphed to automatically identify the presence or absence of unevenness. Then, if it is determined that unevenness has occurred, that is, film residue exists, the control unit 18 is notified of this fact. Then, the control unit 18 controls the processing unit 16 to execute the wafer processing of step S102 again.

[0178] In addition, the measurement process of step S103 may be performed together with the above wafer processing, or may be performed separately, for example, between the first cleaning process (step S202) and the second liquid treatment (step S203) in the wafer processing of step S102. Thus, the excision width based on the first liquid treatment (step S201) can be individually confirmed, and the subsequent nozzle position can be adjusted based on the result. Alternatively, the additional processing of the first liquid treatment as described above can be performed to remove the film residue.

[0179] <Second Embodiment>

[0180] In the first embodiment, the eccentricity WD can be measured using the imaging device 270 , but the holding position of the wafer W may be automatically adjusted based on the eccentricity WD. In this embodiment, the operation when the holding position adjustment mechanism is provided inside the processing unit 16 will be described.

[0181] Fig.18 1 is a diagram for explaining the holding position adjustment mechanism provided in the processing unit 16 of the present embodiment. The mechanism can be provided, for example, at Figure 2The interior of the housing 260 of the processing unit 16 is shown in FIG. Figure 3 The space below the processing liquid supply parts 250A and 250B.

[0182] Fig.18 (a) is a diagram of the holding position adjustment mechanism 1800 as seen from above. For convenience, the wafer W is indicated by a dotted line, but the wafer W is located above the holding position adjustment mechanism 1800 .

[0183] The holding position adjustment mechanism 1800 includes a hand 1801, an arm 1802, and a supporting rotating part 1803. The hand 1801 is an arc-shaped supporting member, and has an arc shape of a size that surrounds the holding part 210. In addition, three protrusion members 1804 are provided on the surface of the hand 1801 for directly contacting the back surface of the wafer W. The hand 1801 is not limited to an arc shape, as long as it is an arc shape (including an angular U-shape) of a size that surrounds the holding part 210 from the outside of the holding part 210.

[0184] The arm 1802 is connected to the hand 1801 at one end, and is used to move the hand 1801 horizontally along an axis. The support rotation part 1803 is connected to the other end of the arm 1802, supports the arm 1802 and drives the motor (not shown) to rotate the hand 1801 and the arm 1802 in the direction of the arrow 1805. Thus, the hand 1801 can be positioned to surround the holding part 210 (at Fig.18 (a) indicated by the dotted line) and the retreat position (in Fig.18 In addition, the hand 1801 and the arm 1802 can be raised and lowered integrally. Fig.18 In (a), the two-dot chain line indicates the direction of the X-axis, and the imaging device 270 is also located on this straight line, but is not shown in the figure.

[0185] Fig.18 (b) is a side view of the holding position adjustment mechanism 1801 as viewed from the lateral direction. By raising the protrusion 1804 to a position higher than the upper surface of the holding portion 210, the protrusion 1804 can contact the wafer to lift the wafer, and by lowering it to a position lower than the height of the holding portion 210, the wafer can be delivered to the holding portion 210. In addition, as shown by the arrow, the arm 1802 can be moved linearly forward and backward along the X-axis direction, and the position of the arm 1802 can be changed linearly forward and backward.

[0186] Next, use Fig.19 and Fig. 20 The holding position adjustment process according to the present embodiment will be described with reference to the flowchart shown in FIG.

[0187] like Fig.19As shown in the overall process of the first embodiment, Figure 7 In the overall process of FIG. 1 , the holding position adjustment process of this embodiment is additionally performed after the wafer input process of step S101. Fig.19 In the above, the processing other than the holding position adjustment processing of step S111 is the same as Figure 7 The processing described in is the same as that described in , so the description is omitted here. Fig. 20 The details of step S111 are described with reference to the flowchart of FIG.

[0188] exist Fig. 20 In the process, the first imaging condition is set as the imaging condition of the imaging device 270 (step S401), the imaging of the wafer W under the first imaging condition is repeated according to the preset number of imaging times (step S402), the number of imaging times is determined (S403), and the wafer W is rotated (S404). Fig.12 The processes other than the shooting based on the second shooting condition (step S303) in the repeated processing of steps S301 to S305 shown are the same processes, so detailed description is omitted. As described in the first embodiment, in order to know the eccentricity WD, it is sufficient to know the position of the wafer peripheral end 1111, so only shooting under the first shooting condition is performed.

[0189] After the above steps are completed (step S403: "Yes"), the process proceeds to step S405, where the image analysis process is performed using the 360-degree first captured image (S405). Then, the eccentricity WD is determined as the result of the measurement (step S406). The details of the image analysis process for determining the eccentricity WD have been described in the first embodiment. Fig.15 However, the maximum and minimum values ​​of the wafer peripheral edge 1111 are also stored in advance. For example, when the maximum value is obtained at the 60th time and the minimum value is obtained at the 240th time, when the wafer is placed on the holding part 210, the vector of the eccentricity WD, that is, the direction of the offset is in the direction after rotating -60 degrees from the initial position of the rotation in step S401.

[0190] Next, a step of adjusting (correcting) the position of the wafer W based on the eccentricity WD is started. Fig.21 The operation of the holding position adjustment mechanism 1800 will be described.

[0191] First, an action is performed to align the phase of the eccentricity of wafer W (S407). If the holding unit 210 has not been rotated since the 360 ​​shots were completed in step S403, the holding unit 210 is in the initial position of the rotation in step S401. In this step, the wafer W is rotated so that the peripheral end 1111 takes a maximum rotation angle. In the above example, the wafer W is rotated 60 degrees from the initial position of the rotation. As a result, the direction of the vector of the eccentricity WD is consistent with the direction of the X-axis, and the holding position adjustment mechanism 1800 can adjust the wafer W to the appropriate position by a simple control action of moving the wafer W parallel to the X-axis direction by the eccentricity WD.

[0192] Next, make Fig.21 The cover member 230 (imaging device 270) in the state (a) is located in the retreat position (relative to the state shown in FIG. 1 ) by the lifting mechanism 240. Figure 2 The cup body 220 is lowered by the lifter 243 of the cup lift mechanism (step S408). Here, the holding unit 210 also holds the wafer W by suction (the downward clear arrow).

[0193] Then, if Fig.21 As shown in (b), the holding position adjustment mechanism 1801 is operated to rotate the arm 1802 and enter between the wafer W and the cup 220, so that the hand 1801 is located under the wafer W (S409). Then, the suction of the holding part 210 is stopped (S410).

[0194] Then, the position of the wafer W is adjusted based on the eccentricity WD determined in step S406 (S411). Fig.21 As shown in (c), the support rotating unit 1803 raises the arm 1802 to make the protrusion 1804 of the hand 1801 contact the back side of the wafer W. At this time, the hand 1801 is Fig.18 As shown in FIG. 2 , the area of ​​the lower surface of the wafer W that is outside the contact area with the holding portion 210 is supported. Fig.21 As shown in (d) of FIG. 1 , the hand 1801 and the arm 1802 are raised to make the holding portion 210 and the wafer W non-contact. Then, as shown in FIG. Fig.21 As shown in (e), the arm 1802 is moved by an amount corresponding to the eccentricity WD.

[0195] Then, the arm 1802 is lowered, as shown in FIG. Fig.21 As in (f), the wafer W is brought into contact with the holding portion 210, and adsorption is started again (S412), and as in Fig.21 As shown in (g), the arm portion 1802 is further lowered so that the arm portion 1802 and the wafer W are no longer in contact.

[0196] Then, if Fig.21 As shown in (h), the arm 1802 is retracted (S413), and finally the cover member 230 is lowered by the lifting mechanism 240, and the cup body 220 is moved upward by the lift 243 of the cup lifting mechanism to return to Figure 2 The position shown in FIG. 4 is obtained, thereby ending a series of processing (step S414).

[0197] As described above, according to the present embodiment, a holding position adjustment mechanism 1800 is provided to support the wafer W from the lower surface and adjust the holding position of the wafer W, and the holding position adjustment mechanism 1800 adjusts the holding position of the wafer W relative to the center of the holding portion 210 according to the eccentricity of the wafer W determined based on the image captured by the imaging device 270. The holding position adjustment mechanism 1800 dives under the wafer W to perform position adjustment, so compared to the previous method of performing position adjustment by laterally clamping the wafer W from the outer peripheral end, it is possible to reduce the space occupied by the holding position adjustment mechanism in the housing. Therefore, good adjustment can be performed without increasing the occupied space of the device. In addition, the wafer W is held from below by the protruding member 1804 of the hand 1801, so that the position adjustment can be performed stably and appropriately without damaging the outer peripheral end of the wafer W. Furthermore, since the adjustment is performed on the lower surface of the area of ​​the wafer W that is outside the contact area between the wafer W and the holding part 210, the upward lift amount only needs to be slightly lifted relative to the holding part 210, and there is no need to ensure space in the Z-axis (vertical) direction for position adjustment in the structure of the processing unit 16. In addition, the wafer W is rotated in advance to determine the direction of eccentricity, and the position adjustment is performed on the basis of rotating the wafer W so that the direction is consistent with the direction of linear movement of the arm part 1802 (X-axis direction), so that the control of the holding position adjustment mechanism can be simple and precise.

[0198] <Third Embodiment>

[0199] In the above-described embodiment, the measurement processing device 601 first performs imaging settings of the imaging device 270 before starting the measurement process. However, the setting may be changed according to the wafer to be measured or the content of the process.

[0200] There are various types of wafers to be measured. For example, there are wafers with water-soluble films, metal films such as titanium, aluminum, and tungsten. These films have inherent refractive indices, attenuation rates, etc., and therefore have different light reflection characteristics. Therefore, even if the image is taken by an image capture device under the same image capture conditions, the brightness level of the edge appearing in the captured image is different.

[0201] In the first embodiment, Fig.11In the film structure shown, as the second imaging condition, an imaging condition that places emphasis on the reflected light level of the intermediate illumination is set so that the position of the processed film boundary 1109 can be accurately identified.

[0202] However, as mentioned above, the reflection characteristics of light vary depending on the type of film. Therefore, even at the reflected light level of intermediate illumination, there is a situation where high-precision edge detection can be performed by allocating a wide color gradation range to the intermediate illumination that is relatively close to the low illumination side; and conversely, high-precision edge detection can be performed by allocating a wide color gradation range to the intermediate illumination that is relatively high illumination.

[0203] Furthermore, the chamfer of the wafer W is formed from the base, and if the material of the wafer itself is different, the light reflection characteristics also change. Therefore, if the first imaging condition is also changed according to the type of film, good detection may be possible.

[0204] Furthermore, even if the type of film is the same, it may be better to change the imaging conditions according to the size of the set cut-out width.

[0205] In this embodiment, the measurement settings including the imaging conditions are defined as an "image processing recipe", and the image processing recipe is selected according to the type of film on the wafer to be processed. Fig. 22 The image processing process in this embodiment is described.

[0206] Fig. 22 (a) is a table 2201 of measurement settings showing the correspondence between film types and image processing recipes. Image processing recipes 2202 are set corresponding to film types 2203 and cut-off widths 2204. This table is stored in the storage unit 607 of the information processing device 602 in advance.

[0207] In this embodiment, the shooting conditions included in the image processing process are conditions reflected in the brightness of the captured image, and the shooting conditions include the setting of the sensitivity of the CCD, the setting of the exposure, etc. In addition, if the fineness of the brightness and darkness of the image changes due to the size of the set cut-out width and the shooting conditions, it is better to change the edge detection processing algorithm accordingly. Therefore, in this embodiment, the edge detection method of the detection processing and the method of related processing (color scale conversion, etc.) used for detection can also be changed.

[0208] Fig. 22 (b) shows a list of image processing recipes of this embodiment. The list 2205 of image processing recipes is stored in advance in the storage unit 604 of the measurement processing device 601.

[0209] Image processing process A is set corresponding to the process of removing the peripheral portion of the water-soluble film wafer with a width of 3 mm, and the first shooting condition is used as the condition for shooting the chamfered area 2206, and the second shooting condition is used as the condition for shooting the processed film boundary 2207. In addition, detection processing A is performed as edge detection processing 2208.

[0210] In the process of removing the peripheral portion of the water-soluble film wafer with a width of 2 mm, the best third shooting condition and detection process B are selected to detect the narrow removal width. In addition, in the case of aluminum and titanium, the characteristics of the substrate and the film are different from those of the water-soluble film wafer, so the best shooting conditions, image processing, and detection processing are set. In addition, a standard image processing process E is also prepared for the processing of wafers with unknown film types. For example, the eighth shooting condition is set to a condition including a set value between the first shooting condition and the fourth shooting condition, and the ninth shooting condition is set to a condition including a set value obtained by averaging the second shooting condition, the third shooting condition, the fifth shooting condition, and the sixth shooting condition.

[0211] The processing of this embodiment can be applied to Fig.12 The shooting setting is performed in step S301 of the flowchart shown in FIG. Fig.23 The details of the shooting setting in this embodiment are described with reference to the flowchart shown.

[0212] First, the control device 4 determines the wafer processing recipe based on reception from an external device or operation input from the operation device 601, and sends the wafer processing recipe from the control device 4 to the information processing device 602. In the information processing device 602, the control unit 606 acquires the wafer processing recipe (S501).

[0213] Next, the content of the acquired wafer processing recipe is read to determine the film type information of the wafer W to be processed and the cutting width to be etched ( S502 ).

[0214] The control unit 605 retrieves the data stored in the storage unit 606 Fig. 22 The film type and the cut-off width determined in step S502 are searched in the selection table of (a). Since there is a set of the film type and the cut-off width this time, the corresponding process A is selected (S503).

[0215] Then, the information processing device 602 sends the setting instruction information to the measurement processing device 601 so that the selected process A is used. The control unit 603 of the measurement processing device 601 uses the received setting instruction information to read the process A from the storage unit 604 and sends the shooting conditions to the shooting control unit 515. The shooting control unit 515 sets the received shooting conditions for subsequent shooting. In addition, the control unit 603 sets the detection processing when performing the measurement processing (S504).

[0216] The above is an example of the present embodiment. However, if the information of the film type is not recorded in the wafer processing process of step S501, the information of the film type may be obtained by a different method in step S502. For example, a sensor (not shown) that determines the film type by irradiating light and receiving its reflected light may be provided in the housing 260 in advance, and the control unit 603 may directly check the input wafer W to determine the film type of the wafer W.

[0217] As described above, according to the present embodiment, information on the type of film on the wafer W is acquired, a measurement setting corresponding to the acquired type of film is selected from a plurality of measurement settings pre-stored in the storage unit 607, and the imaging device 270 uses the selected measurement setting to image the peripheral portion of the wafer W. Thus, the user does not need to spend time adjusting the measurement settings such as imaging conditions, and can perform measurement processing appropriately and quickly.

[0218] <Fourth Embodiment>

[0219] In this embodiment, a method of analyzing and processing the information of the measurement processing results accumulated in the information processing device 601 and utilizing the information for maintenance and management of the device will be described.

[0220] Fig.24 A management list 2400 showing measurement processing results stored in the storage unit 607 of the information processing device 601 .

[0221] The information in the management list 2400 includes processing recipe information 2401 that can be identified from the description of the recipe to be performed on the wafer W to be processed, and measurement processing result information 2402 that is determined when the measurement is performed by the measurement processing device 601 . The processing recipe information 2401 is information that can be identified from the description of the recipe to be performed on the wafer W to be processed.

[0222] The processing recipe information 2401 includes a lot ID 2403 and a wafer ID 2404 as identification information of the wafer W. In addition, the processing recipe information 2401 includes a film type 2405 and a set cutting width 2406 related to a specific processing.

[0223] The measurement processing result information 2402 includes the image processing recipe 2407 described in the third embodiment, the date 2408 when the measurement processing was performed based on the image processing recipe, and the time 2409. In addition, as the result of the measurement processing, there are the maximum value "Max" 2410, the minimum value "Min" 2411, and the average value "Ave" 2412 of the result of the cut-off width at 360. In addition, not only the maximum value and the minimum value but also all the measurement values ​​at 360 may be stored.

[0224] The information processing device 601 has a folder for recording captured images for each measurement process of a wafer and a folder for recording the image capture settings such as the focus adjustment information of the image capture device 270 used in the image capture in the storage unit 607. A link 2413 to the captured image folder and a link 2414 to the image capture setting information are also stored as the measurement process result information 2402.

[0225] Next, a specific analysis process and maintenance management method using the above-mentioned information list of measurement process results will be described below.

[0226] First, regarding lot ID "3342", 25 wafers W of the same type are continuously measured using the same wafer processing recipe and image processing recipe A. This makes it possible to confirm whether the wafer group of one lot has been cut without any deviation.

[0227] Lot ID "3342" and lot ID "3842" were processed on the same type of wafer W using the same wafer processing process and image processing process A, but were measured on different dates. Fig.25 The following describes the details of this case.

[0228] Fig.25 (a) is a curve graph with the vertical axis being the eccentricity ((maximum value "Max" - minimum value "Min") / 2) and the horizontal axis being the date (and time) when the measurement processing is performed. The control unit 606 of the information processing device 602 can create the curve graph based on the management list 2400.

[0229] The time-dependent change of the eccentricity can be known from this graph. Fig.25 The example of the time-dependent change 2501 in (a) shows that the eccentricity increases with the passage of time. One of the causes is that the wafer W cannot be accurately conveyed due to the wear of the components constituting the substrate conveying device 17.

[0230] The control unit 606 of the information processing device 601 creates a graph of the time-varying changes 2501 and sends the graph to the control device 4. The control device 4 can display the graph in the first embodiment according to the user's request or automatically. Fig.17 In the curve chart window 1705 of the display screen 1700.

[0231] In addition, for example, the eccentricity that can be tolerated in the operation of the device can be determined in advance as the first threshold through experiments, and if a result indicating that the device is continuously approaching the first threshold is obtained, the user is automatically notified of this fact. Fig.25 In the example of (a), when the eccentricity exceeds a second threshold value which is smaller than the first threshold value, a reminder is given to the user on the display screen 1700 to check or replace the substrate conveying device 17. In addition, not only whether the second threshold value is exceeded is used as a judgment condition for the reminder, but also multiple measurement results of the eccentricity before reaching the second threshold value can be extracted to add whether the multiple values ​​have an increasing trend as a judgment condition for the reminder.

[0232] In addition, when the eccentricity suddenly exceeds the first threshold value as in the time-dependent change 2502, there is a high possibility that an abnormality of the device has occurred, so a warning, device stop, or other notification is issued on the display screen 1700.

[0233] Fig.25 (b) is a graph in which the vertical axis represents the absolute value of the difference between the average value "Ave" of the actual cut-out width and the set value of the cut-out width, and the horizontal axis represents the date (and time) when the measurement process is performed.

[0234] The graph shows the change over time in the accuracy of the liquid discharge position of the liquid dischargers 250A and 250B. Fig.25 In the example of the time-dependent change 2503 in (b), it is shown that the accuracy of the liquid ejection position decreases with the passage of time. One of the reasons is that the position of the liquid ejection cannot be accurately controlled due to the wear of the components constituting the processing liquid supply unit 250A, 250B. In this case, Fig.25 Similarly to (a), a graph of the time-varying change 2403 can be displayed in the graph window 1705 of the display screen 1700 according to the user's request or automatically. In addition, a reminder can be issued when the second threshold is exceeded. Fig.25 Similar to the example (a), whether or not the absolute values ​​of a plurality of differences have an increasing trend may be added as a judgment condition for calling attention.

[0235] In addition, when the first threshold is exceeded suddenly as in the case of the time-dependent change 2504 , there is a high possibility that an abnormality has occurred in the device, and thus a warning, device stop, or other notification is given on the display screen 1700 .

[0236] Below, in Fig.26 The overall process of the system in this embodiment is shown in FIG. Figure 7 The flowchart of FIG. 1 adds the result analysis process of step S131. Therefore, the description of the process of steps S101 to S104 is omitted here.

[0237] Next, use Fig. 27 The details of the result analysis processing of step S131 are described with reference to the flowchart of FIG.

[0238] First, the information processing device 602 obtains the measurement result information from the measurement processing device 601 (S601). The information obtained here is Fig.24 The measurement processing result information 2402 shown in FIG.

[0239] Next, the information acquired in step S601 is stored in the storage unit 607 to create Fig.24 Here, the process information 2401 has been acquired before the measurement process, so the process information 2401 is associated with the measurement process result information 2402. If the list has already been created, the management list 2400 is created by adding and updating the measurement result information this time.

[0240] Then, as a process for analyzing the processing state of the wafer W, it is confirmed whether the eccentricity of a wafer W in the measurement result exceeds a predetermined first threshold value (S603). Here, if it is determined that the eccentricity exceeds the first threshold value (S604: "No"), a warning notification (S605) is issued, and control such as stopping the device is performed as a response to an abnormality.

[0241] In addition, similarly, as a process for analyzing the processing status of wafer W, it is confirmed whether the difference between the actual cutting width and the set value exceeds the first threshold value (S603). Here, if it is determined that it exceeds the first threshold value (S604: "No"), a warning notification (S605) is issued, and control such as stopping the device is performed as a response to abnormalities.

[0242] On the other hand, if it is determined that the first threshold value has not been exceeded, then the analysis of the change over time is performed as a process for analyzing the processing state of the wafer W (S606). Here, as described above, it is determined whether the eccentricity and the cutting width have exceeded the second threshold value. If it is determined that they have exceeded the second threshold value (S607: No), a warning or the like is notified through the display screen 1700 (S608).

[0243] If there is no particular abnormality, the created graph is displayed as a notification of the analysis result in the graph window 1705 of the display screen 1700 (S609). The graph may be displayed together with the notification of the warning or caution in steps S605 and S608.

[0244] As described above, according to the present embodiment, the information processing device 602 creates a management list 2400 including the processing process information 2401 and the measurement processing result information 2402. Moreover, the state of the substrate processing is analyzed based on the management list 2400, and a predetermined notification is given to the user according to the analysis result. In this way, by managing the information on the film removal of the peripheral portion of the wafer W, the processing unit 16 can be used stably for a long time. In particular, the failure, wear, and deterioration of the processing liquid supply unit 250 and the substrate conveying device 17 can be known based on the cutting width and eccentricity, so that maintenance and component replacement can be performed at an appropriate time.

[0245] <Fifth Embodiment>

[0246] In the first to fourth embodiments, the measurement process is performed before or after the chemical liquid process in order to obtain the result of wafer processing or the amount of eccentricity.

[0247] On the other hand, there is a need to confirm the state of the wafer when the liquid is actually supplied. If the state during the liquid supply can be evaluated, it can also be reflected in the adjustment operation of the supply amount of the processing liquid, the nozzle position, etc. In this embodiment, an example of measuring processing during the liquid treatment and cleaning processing is described.

[0248] Fig.28 2 is a top view of the processing unit 16 in this embodiment. In the first to fourth embodiments described above, a photographing device 270 is provided between two processing liquid supply units to photograph an area on the wafer W where no chemical solution is present. Fig.28 As shown in the figure, the imaging device 270A and the imaging device 270B are provided. The imaging device 270A is provided at a position ahead of the processing liquid supply unit 250A in the rotation direction R1 of the wafer W, and can capture the state of the processing liquid being supplied. Similarly, the imaging device 270B is provided at a position ahead of the processing liquid supply unit 250B in the rotation direction R2 of the wafer W, and can capture the state of the processing liquid being supplied. In addition, this embodiment is as described in the above embodiment. Figure 7 , Fig.19Since the imaging device 270A and the imaging device 270B are implemented as part of the overall process, at least one of the imaging device 270A and the imaging device 270B is also used in the measurement processing of the cutting width and the eccentricity, etc. In addition, in this embodiment, it is assumed that the influence on the imaging caused by the liquid adhesion to the imaging device described in the first embodiment is small enough to be ignored.

[0249] In this embodiment, using Fig.29 To illustrate how Fig.28 The positional relationship between the imaging ranges of the imaging devices 270A and 270B, the wafer W, and the liquid on the wafer W when the imaging devices are arranged in this manner.

[0250] exist Fig.29 In the figure, area 2901 indicates the imaging range of imaging device 270A, and area 2902 indicates the imaging range of imaging device 270B.

[0251] Fig.30 The diagram is a diagram for explaining the arrangement relationship among the imaging device 270 , the processing unit 16 , and the wafer W in the area 2901 or the area 2902 , and the liquid adhesion state of the chemical solution or the cleaning solution.

[0252] Fig.30 It shows the state after the chemical treatment has just started, indicating that the treatment film has not been removed and the chemical solution 3001 is attached to the treatment film and the chamfered area. In addition, the camera is taken with the arrival area 902 (905) as the center of the viewing angle. In theory, the cutting width in the wafer processing process is Fig.30 The liquid attachment width should be the same, and one purpose of this embodiment is to confirm the consistency of the two. To this end, it is necessary to properly capture the position of the inner end boundary 3002 of the liquid attachment and the change of its state.

[0253] For example, it is possible to predict that the position and thickness of the inner edge 3002 will change when the treatment film is removed during the liquid treatment. Therefore, in this embodiment, a still image is not taken but a moving image is taken, thereby confirming the liquid adhesion status from the start to the end of the liquid treatment.

[0254] In addition, the liquid adheres differently depending on the rotation speed and the properties of the processing liquid, so the conditions for movie shooting are different for the first liquid and the second liquid. As in the above embodiment, the shooting condition is to enable good edge detection between the processing film and the place where the liquid adheres.

[0255] Next, use Fig.31 The flow chart of FIG. 1 is used to illustrate the liquid treatment accompanying the shooting in this embodiment. In addition, in this figure, regarding S201 to S205, the same as that described in the first embodiment Figure 8The steps shown in the flowchart are the same, so the description is omitted.

[0256] First, before starting to supply the liquid, the wafer W is imaged under the first moving image imaging condition (S701). The imaging condition here is the optimal imaging condition for the chemical liquid used in the first chemical liquid treatment and the cleaning liquid used in the first cleaning treatment.

[0257] Next, the first chemical liquid treatment (S201) and the first cleaning treatment (S202) are started. During the steps S201 and S202, the camera 270 continues to shoot based on the first animation shooting condition. During this time, the measurement processing device 601 sends the captured moving image to the control device 4 in real time, and the control device 4 displays the moving image in the first image window 1703 of the display screen 1700, for example.

[0258] Next, the video recording of the camera 270 is temporarily stopped, and the moving image obtained by the recording is sent to the information processing device 602, and the information processing device 602 performs a recording process of the moving image (S702). The details of the recording process will be described later.

[0259] Next, the imaging device 270 changes the imaging condition to the second imaging condition and starts imaging ( S703 ).

[0260] Next, the second liquid treatment (S203) and the second cleaning treatment (S204) are started. During the steps S203 and S204, the camera 270 continues to shoot based on the second animation shooting condition. During this time, the captured moving image is sent to the control device 4 in real time, and the control device 4 displays the moving image in the second image window 1704 of the display screen 1700.

[0261] Next, the video recording of the camera 270 is temporarily stopped, and the moving image obtained by the recording is sent to the information processing device 602, and the information processing device 602 performs a recording process of the moving image (S704). The details of the recording process will be described later.

[0262] Finally, a drying process is performed (S205), and a series of chemical liquid treatments are completed.

[0263] The above is the chemical liquid treatment of this embodiment. However, in the chemical liquid treatment of step S201, the wafer W rotates at a high speed. In the case of rotating at 3000 rpm, it is calculated to rotate 50 times per second. Theoretically, the arrival area 902 (905) of the chemical liquid and the cleaning liquid does not change with respect to the shooting angle. Fig.15 In the case of the eccentricity described above, the position of the wafer peripheral edge 1111 of the wafer W is Fig.30The "variable width" shown in the figure is repeatedly varied at high speed. The frame rate of general animation shooting is about 30fps, so it is difficult to accurately shoot and observe the liquid adhesion width. In order to prevent this problem from occurring, it is preferred to execute Fig.19 The holding position adjustment process shown in step S111 is performed to set the eccentricity to be eliminated and then perform the liquid treatment of step S201. In addition, the holding position adjustment process is not limited to the method described in the second embodiment.

[0264] Next, the recording process of steps S702 and S704 will be described. It is more preferable if the liquid adhesion width during the process can be fed back to the setting and control of the subsequent liquid treatment, rather than being confirmed by the user by observing the captured video.

[0265] In this embodiment, the captured animation is recorded in the storage unit 607 and Fig.24 The inner end boundary 3002 is added to the measurement processing result information 2402 of the management list 2400 of the measurement processing result. As a result, the set cutting width 2406, the actual measured cutting width, that is, the average value "Ave" 2412, and the inner end boundary 3002 can be compared for each wafer. In addition, feedback settings such as determining the offset value of each nozzle of the processing liquid supply unit 250A, 250B in the subsequent processing can be performed based on the comparison result.

[0266] Regarding the calculation method of the inner edge 3002, if the illumination levels of the reflected light of the treatment film region 1101 and the chemical solution 3001 are sufficiently different, it is sufficient to find the brightness edge between the two in each frame of the moving image. Fig.30 In that way, an outward liquid flow as shown by the arrow is generated in the area where the drug 3001 is attached, so the frame difference can be taken for multiple consecutive frames, and the absolute value of the difference change and the radial position where the movement direction changes significantly can be estimated as the inner end boundary 3002.

[0267] Here, an example of feedback of information on the liquid adhesion state according to the present embodiment will be described.

[0268] Assume that the cutting width is 3 mm and the liquid supply time is 30 seconds in the first liquid treatment of step S201. In this case, the nozzle position is configured at a position corresponding to the cutting width of 3 mm, and the supply of the first liquid is started at a predetermined first flow rate, but when the management list 2400 is referenced later, the average value "Ave" is 3.1 mm, which is a deviation.

[0269] In the present embodiment, since the moving image of the liquid supply time, that is, the 30-second period, is recorded in association with the information, it is possible to know what phenomenon actually occurred on the wafer W.

[0270] For example, by observing the moving image, the user can learn that as the process progresses, the process film on the wafer W is removed and becomes thinner, and when 20 seconds have passed, the first chemical solution intrudes into a region of 3.1 mm.

[0271] The user accepts this phenomenon and can re-create the process by, for example, moving the nozzle position outward by 0.1 mm after 20 seconds have passed, or reducing the amount of the first chemical solution after 20 seconds have passed. This can prevent excessive removal of the treated film, thereby obtaining a result that complies with the process, that is, an average value "Ave" of 3.0 mm.

[0272] Not only can it be set by the user, but it can also be automatically controlled by the control device 4. It is assumed that during the liquid supply time of 30 seconds, the inner end boundary 3002 is also continuously recorded every second. The information processing device 602 analyzes the management list 2400, and if it is determined that the inner end boundary 3002 is offset by 0.1 mm compared with the recorded information so far after 20 seconds, the content is notified to the control device 4. The control device 4 issues an instruction to the processing unit 16 in the next processing of the wafer W, so that it automatically controls the nozzle position and liquid volume in the following manner: the nozzle position is moved 0.1 mm to the outside after 20 seconds, or the liquid volume of the first liquid is reduced after 20 seconds. In addition, the control device 4 can take the same response as the above-mentioned user example, such as changing the process itself, or urging the user to change the process through the display device 609.

[0273] As described above, according to the present embodiment, while the processing liquid is being supplied, it is possible to know the adhesion state of the liquid on the peripheral portion of the wafer W. In particular, the boundary between the processing film and the area where the liquid is located can be known, and thus can be effectively used as information for feedback setting of the cutting width, liquid amount, etc.

[0274] The first to fifth embodiments of the present invention are described above, but these examples are not only applicable to processing wafers for products, but can also be applied to special situations such as system startup and maintenance mode. In addition, the system structure is not necessarily fixed to the housing. For example, it can also be configured to prepare a shooting device in advance as a jig, and each device is connected and removed from the system according to the timing required by the application. In addition, each embodiment can be implemented individually based on the necessary parts of the system structure disclosed in the first embodiment, and can also coexist with the structures disclosed in other embodiments. That is, in order to achieve multiple purposes, the first to fifth embodiments can be appropriately combined and implemented.

Claims

1. A substrate processing system, comprising a substrate processing device for performing a process of removing a film from a peripheral portion of a substrate, a camera device for photographing the peripheral portion of the substrate, a measurement processing device for performing a measurement process based on the photographed image, and an information processing device for managing information related to the measurement process, wherein the substrate processing system is characterized in that: The substrate processing device comprises: a rotation holding unit that holds the substrate and rotates the substrate; and a processing liquid supply unit that supplies a processing liquid for removing the film to the peripheral edge of the substrate, The measurement processing device includes a control unit that measures the removal width of the film based on the image captured by the imaging device. The information processing device includes a control unit, which creates a management list that associates processing process information including a set value of the removal width of the film with measurement processing result information including a measured value of the removal width of the film and information on the time when the measurement result was obtained, and analyzes the time-dependent changes of the measurement result based on the created management list.

2. The substrate processing system according to claim 1, characterized in that: The management list includes information on the eccentricity of the substrate relative to the rotation holding portion. The control unit of the information processing device analyzes the state of substrate processing and creates a graph showing the change over time of the measurement result based on the management list.

3. A method for managing a substrate processing device, the substrate processing device comprising: a rotation holding unit that holds a substrate and rotates the substrate; a processing liquid supply unit that supplies a processing liquid for removing a film on a peripheral portion of the substrate; and a photographing unit that photographs the peripheral portion of the substrate, the method for managing the substrate processing device being characterized by comprising the following steps: A process acquisition step of acquiring a substrate processing process including a set value of a removal width of the film; a measuring processing step of measuring a removal width of the film based on an image obtained by the imaging unit imaging a peripheral portion of the substrate processed based on the substrate processing step; a preparation step of preparing a management list in which the set value of the film removal width, the measured value of the film removal width measured by the measurement processing step, and the time information when the measurement result is obtained are associated with each other; as well as The analyzing step is to analyze the change over time of the measurement result based on the created management list.

4. The management method of a substrate processing device according to claim 3, characterized in that: In the measurement processing step, information on the eccentricity of the substrate relative to the rotation holding portion is further measured. In the production process, the information of the eccentricity measured is associated with the management list, In the analyzing step, it is determined whether the eccentricity of the management list exceeds a predetermined threshold value.

5. The management method of a substrate processing device according to claim 3 or 4, characterized in that: A graph showing changes in the measurement results over time is created based on the management list created in the creation step.

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