Upper electrode assembly and semiconductor process chamber

Abstract

The present invention discloses an upper electrode assembly and a semiconductor process chamber, wherein the upper electrode assembly comprises a radio frequency coil (100), a power supply device and an over-temperature protection device (300); the over-temperature protection device (300) comprises a box body (310) and a temperature control component (320); the temperature control component (320) is arranged on the box body (310); the box body (310) is provided with an inner cavity (310a); at least a portion of the radio frequency coil (100) is located in the inner cavity (310a); the radio frequency coil (100) and the power supply device are electrically connected via the temperature control component (320); the temperature control component (320) is used to detect the temperature of the inner cavity (310a); when the temperature of the inner cavity (310a) is greater than a preset temperature, the temperature control component (320) is disconnected to disconnect the radio frequency coil (100) from the power supply device. The above solution can solve the problem of poor safety and reliability of semiconductor process chambers.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an upper electrode assembly and a semiconductor process chamber. Background Art

[0002] With the rapid development of technology, electronic products such as smartphones and tablets have become indispensable in modern life. These electronic products contain numerous semiconductor chips, the primary manufacturing material of which is wafers. Wafers need to be etched with circuit patterns, typically using semiconductor process equipment.

[0003] The semiconductor process chamber includes a chamber body and an upper electrode assembly. The upper electrode assembly is arranged on the top of the chamber body. The upper electrode assembly includes a radio frequency power supply and a radio frequency coil. When the radio frequency power supply is energized for the radio frequency coil, it can ionize the process gas inside the chamber body, thereby generating plasma.

[0004] However, since semiconductor process chambers are prone to software jams, the RF power supply of the upper electrode assembly cannot stop outputting the RF voltage, causing the RF power supply to continuously energize the RF coil, resulting in excessive ionization of the process gas in the semiconductor process chamber, which can easily cause damage to the semiconductor process chamber and poor safety and reliability of the semiconductor process chamber. Summary of the Invention

[0005] The invention discloses an upper electrode assembly and a semiconductor process chamber, so as to solve the problem of poor safety and reliability of the semiconductor process chamber.

[0006] In order to solve the above problems, the present invention adopts the following technical solutions:

[0007] An upper electrode assembly is used in a semiconductor process chamber, the upper electrode assembly comprising a radio frequency coil, a power supply device and an over-temperature protection device;

[0008] The over-temperature protection device includes a box body and a temperature control component. The temperature control component is disposed on the box body. The box body defines an inner cavity. At least a portion of the radio frequency coil is located in the inner cavity. The radio frequency coil is electrically connected to the power supply device via the temperature control component. The temperature control component is used to detect the temperature of the inner cavity. When the temperature of the inner cavity is greater than a preset temperature, the temperature control component is disconnected to disconnect the radio frequency coil from the power supply device.

[0009] A semiconductor process chamber comprises a chamber body, a dielectric window arranged above the chamber body and the above-mentioned upper electrode assembly, wherein the upper electrode assembly is arranged above the dielectric window.

[0010] The technical solution adopted by the present invention can achieve the following beneficial effects:

[0011] In the upper electrode assembly disclosed herein, when the semiconductor process chamber's software freezes, the power supply device continues to power the RF coil. The longer the RF coil is powered, the more heat it generates. This heat heats the gas within the chamber, raising its temperature. A temperature control device monitors the chamber's temperature. When the chamber's temperature exceeds a preset value, the temperature control device trips, disconnecting the RF coil from the power supply device and stopping power supply to the RF coil. This prevents damage to the semiconductor process chamber and improves its safety and reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0013] Figure 1 A schematic structural diagram of an upper electrode assembly disclosed in an embodiment of the present invention;

[0014] Figure 2 A partial schematic diagram of an upper electrode assembly disclosed in an embodiment of the present invention;

[0015] Figure 3 for Figure 2 sectional view of

[0016] Figure 4 An exploded view of the over-temperature protection device in the upper electrode assembly disclosed in an embodiment of the present invention;

[0017] Figure 5 A schematic structural diagram of a temperature control component in an upper electrode assembly disclosed in an embodiment of the present invention;

[0018] Figure 6 A schematic diagram of the circuit connection between the temperature control component and the power supply device in the upper electrode assembly disclosed in an embodiment of the present invention;

[0019] Figure 7 This is a schematic diagram of the connection of the ventilation assembly in the upper electrode assembly disclosed in an embodiment of the present invention;

[0020] Figure 8 This is a schematic structural diagram of a semiconductor process chamber disclosed in an embodiment of the present invention.

[0021] Description of reference numerals:

[0022] 100-RF coil, 210-power supply, 220-RF power supply, 230-matching device, 300-overtemperature protection device, 310-box, 310a-inner cavity, 310b-perforation, 311-base, 3111-bottom plate, 3112-first side wall, 3112a-first plate, 3112b-second plate, 3112c-third plate, 3113-second side wall, 3113a-fourth plate, 3113b-fifth plate, 3113c-sixth plate, 312-upper cover, 3121-top plate, 3122-top plate, 3123-bottom plate, 3124-bottom plate, 3125-bottom plate, 3126-bottom plate, 3127-bottom plate, 3128-bottom plate, 3129-bottom plate, 3130-bottom plate, 3131-bottom plate, 3132-bottom plate, 3133-bottom plate, 3134-bottom plate, 3135-bottom plate, 3136-bottom plate, 3137-bottom plate, 3138-bottom plate, 3139-bottom plate, 3140-bottom plate, 3141-bottom plate, 3142-bottom plate, 3143-bottom plate, 3144-bottom plate, 3145-bottom plate, 3146-bottom plate, 3147-bottom plate, 3148-bottom plate, 3149-bottom plate, 3150-bottom plate, 3151-bottom plate, 3152-bottom plate, 3153-bottom plate, 122-third side wall, 3123-fourth side wall, 320-temperature control component, 321-main body, 322-first terminal, 323-second terminal, 324-temperature measuring column, 410-first pneumatic connector, 420-second pneumatic connector, 430-first control valve, 440-second control valve, 450-blowing mechanism, 460-exhaust mechanism, 470-first partition connector, 480-second partition connector, 500-coil fixing plate, 600-upper electrode shell, 700-chamber body, 800-medium window. DETAILED DESCRIPTION

[0023] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0024] The technical solutions disclosed in various embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0025] like Figures 1 to 8 As shown, an embodiment of the present invention discloses an upper electrode assembly, which is applied to a semiconductor process chamber. The disclosed upper electrode assembly includes a radio frequency coil 100, a power supply device and an over-temperature protection device 300.

[0026] The RF coil 100 is capable of generating a magnetic field, thereby ionizing process gases within a semiconductor processing chamber. A power supply is used to power the RF coil 100. The overtemperature protection device 300 includes a housing 310 and a temperature control element 320. The temperature control element 320 is disposed on the housing 310. The housing 310 defines an inner cavity 310a, within which at least a portion of the RF coil 100 is located. The RF coil 100 is electrically connected to the power supply via the temperature control element 320. The temperature control element 320 is used to detect the temperature of the inner cavity 310a. When the temperature of the inner cavity 310a exceeds a preset temperature, the temperature control element 320 is disconnected, thereby isolating the RF coil 100 from the power supply.

[0027] In the embodiments disclosed herein, when the semiconductor process chamber software freezes, the power supply device continues to power the RF coil 100. The longer the RF coil 100 is powered, the more heat it generates. This heat heats the gas within the inner cavity 310a of the housing 310, raising the gas temperature therein. A temperature control element 320 monitors the temperature of the inner cavity 310a. When the temperature exceeds a preset value, the temperature control element 320 trips, disconnecting the RF coil 100 from the power supply device and stopping power supply to the RF coil 100. This prevents damage to the semiconductor process chamber and improves the safety and reliability of the semiconductor process chamber.

[0028] In the embodiments disclosed in this application, the preset temperature can be calculated according to the following formulas (1), (2), and (3). When the RF coil 100 is in operation, current flows into the interior thereof. The RF coil 100 has resistance. Within a certain period of time, the RF coil 100 can generate heat. The heat generated can be calculated according to formula (1);

[0029] W=I 2 *R*t (1)

[0030] W is the heating power of the RF coil 100 , I is the current flowing into the RF coil 100 , R is the resistance of the RF coil 100 , and t is the working time.

[0031] The amount of heating of the gas in the box body 310 can be calculated according to formula (2);

[0032] W=c*m*Δt (2)

[0033] W is the heat of the inner cavity 310a of the box body 310, c is the specific heat capacity of the gas, and m is the mass of the gas in the box body, which can be calculated by m=p*V, where V is the volume of the box body and p is the density of the air, all of which are constants. Δt is the temperature increase value. Since the heat in the box body 310 is equal to the heat generated by the RF coil 100, the heat generated in the box body 310 is known, and c is a constant, Δt can be calculated by formula (2). The temperature of the inner cavity 310a in the time period t can be T1, and the initial temperature of the inner cavity 310a can be T0, so the temperature of the inner cavity 310a after the t-time period can be calculated according to formula 3;

[0034] T1=T0+Δt (3)

[0035] At this time, the maximum process time of the semiconductor process chamber can be set to the maximum power-on time t max , the power supply device has a maximum output current I max , the resistance R of the RF coil 100 is a constant, and t max , Imax Substitute the values ​​of and R into formula (1) to calculate the maximum heat generation W of the RF coil 100 max , after calculating W max Substituted into formula (2), the maximum value of temperature increase Δt is obtained max T0 is the initial temperature, which can be room temperature, so the initial temperature is a constant. max Substituting into formula (3), we can get T1 max , that is, the maximum temperature of the inner cavity 310a, the maximum temperature T1 max Can be used as a preset temperature.

[0036] In the above embodiment, a portion of the RF coil 100 can be located within the inner cavity 310a. The overtemperature protection device 300 should be installed in a location that does not interfere with other components of the upper electrode assembly. Specifically, the length of the RF coil 100 within the housing can be between 30 mm and 200 mm.

[0037] Optionally, the box body 310 can be made of resin material, and of course can also be made of other materials, which is not limited herein.

[0038] In the above embodiment, a through hole is provided on the side wall of the box body 310, which communicates with the inner cavity 310a. The RF coil 100 can then pass through the through hole into and out of the inner cavity 310a. When assembling the box body 310 and the RF coil 100, the RF coil 100 must first be inserted into the box body 310, then assembled into place, and finally connected to the power supply. In this case, the overtemperature protection device 300 is susceptible to interference or scraping with other components of the upper electrode assembly, making assembly of the upper electrode assembly more difficult.

[0039] Based on this, in another optional embodiment, the box body 310 may include a base 311 and a top cover 312. The base 311 and top cover 312 enclose an inner cavity 310a and a gap communicating with the inner cavity 310a. The base 311 and top cover 312 are detachably connected, and at least a portion of the RF coil 100 passes through the gap. During assembly, the RF coil 100 can be first assembled into place, and then the base 311 and top cover 312 can be snapped together at appropriate locations on the RF coil 100, thereby sandwiching the RF coil 100 between the base 311 and top cover 312, thereby completing the assembly of the over-temperature protection device 300 with the RF coil 100. This solution is less likely to damage the RF coil 100 and other components of the upper electrode assembly during assembly of the over-temperature protection device 300, thereby reducing the difficulty of assembling the upper electrode assembly.

[0040] In addition, a gap is reserved between the base 311 and the upper cover 312 to facilitate the insertion and exit of the RF coil 100 , thereby preventing the RF coil 100 from being damaged.

[0041] In addition, the base 311 and the upper cover 312 are detachably connected, thereby facilitating the disassembly and installation of the over-temperature protection device 300 .

[0042] In this solution, the base 311 and the upper cover 312 are detachably connected. When modifying the upper electrode assembly, there is no need to change the position of the RF coil 100. Instead, the base 311 and the upper cover 312 need only be fastened to the RF coil 100 without disassembling the RF coil 100, making modification of the upper electrode assembly simpler and more convenient.

[0043] Optionally, the base 311 and the upper cover 312 may be connected by means of bolts, snaps, etc. Of course, other connection methods may also be used, which are not limited herein.

[0044] In another alternative embodiment, the base 311 may include a bottom plate 3111, and a first side wall 3112 and a second side wall 3113 disposed on the same side of the bottom plate 3111, with the first side wall 3112 and the second side wall 3113 disposed opposite each other. The upper cover 312 may include a top plate 3121, and a third side wall 3122 and a fourth side wall 3123 disposed on the same side of the top plate 3121. The third side wall 3122 and the fourth side wall 3123 may be disposed opposite each other and located between the first side wall 3112 and the second side wall 3113. The top plate 3121 may overlap the sides of the first and second side walls 3112 and 3113 facing away from the bottom plate 3111. A gap is formed between the sides of the fourth and third side walls 3123 and 3122 facing away from the top plate 3121 and the bottom plate 3111.

[0045] In this solution, the third side wall 3122 and the fourth side wall 3123 can be directly inserted between the second side wall 3113 and the first side wall 3112, and the top plate 3121 can be overlapped on the first side wall 3112 and the second side wall 3113, so the box body 310 is simple to assemble and easy to disassemble and install.

[0046] Optionally, the top plate 3121 may be fixed to the first side wall 3112 and the second side wall 3113 by bolts. Of course, other connection methods are also possible, which are not limited herein.

[0047] In another optional embodiment, the first side wall 3112 may include a first plate 3112a, a second plate 3112b, and a third plate 3112c connected in sequence. The second side wall 3113 may include a fourth plate 3113a, a fifth plate 3113b, and a sixth plate 3113c connected in sequence.

[0048] The first plate 3112a and the third plate 3112c can be arranged opposite to each other, and the first plate 3112a and the third plate 3112c are both perpendicular to the second plate 3112b. In this case, the first side wall 3112 is a "U"-shaped structural member.

[0049] The fourth plate 3113a and the sixth plate 3113c can be arranged opposite to each other, and the fourth plate 3113a and the sixth plate 3113c can be perpendicular to the fifth plate 3113b. In this case, the second side wall 3113 is a "U"-shaped structural member.

[0050] The second plate 3112b and the fifth plate 3113b are disposed opposite each other. The first plate 3112a can be flush with the fourth plate 3113a, and the third plate 3112c can be flush with the sixth plate 3113c. The third sidewall 3122 can be located between the first plate 3112a and the fourth plate 3113a, and the fourth sidewall 3123 can be located between the third plate 3112c and the sixth plate 3113c.

[0051] In this solution, the first side wall 3112 and the second side wall 3113 are both "U"-shaped structures. The two "U"-shaped structures are arranged relative to each other, so that the gap at the bottom is smaller, thereby reducing the air convection inside and outside the box body 310, which is beneficial to the heating of the air inside the box body 310, thereby improving the detection accuracy of the temperature control component 320.

[0052] This document discloses a specific structure of a temperature control element 320. Other structures are possible and are not intended to be limiting. Specifically, the temperature control element 320 may include a main body 321, a first terminal 322, a second terminal 323, and a temperature measuring terminal 324. Specifically, the main body 321 is the main body of the temperature control element 320 and may include various electronic components, a housing, and other components of the temperature control element 320.

[0053] The first terminal 322 and the second terminal 323 can be disposed on the same side of the main body 321 and electrically connected to the main body 321. The first terminal 322 and the second terminal 323 serve as terminals for the temperature control element 320. The temperature measuring terminal 324 can be disposed on a side of the main body 321 facing away from the first terminal 322 and the second terminal 323. The first terminal 322 is electrically connected to the power supply, and the second terminal 323 is electrically connected to the RF coil 100. The box body 310 can be provided with a through-hole 310b. The end of the temperature measuring terminal 324 facing away from the main body 321 can extend into the box body 310 through the through-hole 310b. The temperature measuring terminal 324 can be used to measure the temperature of the inner cavity 310a.

[0054] During operation, the temperature measuring post 324 extends into the inner cavity 310 a and is in direct contact with the gas in the inner cavity 310 a . As the temperature of the gas in the inner cavity 310 a increases, the temperature of the temperature measuring post 324 also increases accordingly. The temperature of the temperature measuring post 324 is transmitted to the main body 321 . When the temperature reaches a preset temperature, the electronic components on the main body 321 are disconnected. For example, a fuse is provided in the main body 321 . When the temperature of the temperature measuring post 324 exceeds the melting temperature of the fuse, the fuse blows, thereby causing the first terminal 322 and the second terminal 323 to melt, thereby disconnecting the RF coil 100 from the power supply device.

[0055] In the above solution, the temperature measuring column 324 directly extends into the inner cavity 310a to measure the temperature, thereby improving the temperature detection accuracy of the temperature control member 320. In addition, the temperature control member 320 has fewer components and a simple structure.

[0056] Furthermore, the through-hole 310b can be a stepped hole, and the side of the main body 321 where the temperature measuring column 324 is located can be provided with a stepped surface, which can mate with the stepped hole. In this solution, the main body 321 can be located within the stepped hole, so that the main body 321 is not exposed on the surface of the box body 310, or the exposed area of ​​the box body 310 is small, thereby less likely to damage the temperature control element 320. At the same time, the stepped surface on the main body 321 can overlap the bottom surface of the stepped hole, thereby making the installation of the main body 321 and the box body 310 more stable.

[0057] Optionally, the main body 321 and the box body 310 can be connected by screws, and of course they can also be connected by other means, which are not limited herein.

[0058] Before the first processing step in the semiconductor processing chamber, the temperature in the inner chamber 310a is at room temperature. After the first processing step is completed, the temperature in the inner chamber 310a rises. When the second processing step is performed, the gas in the inner chamber 310a is already at a high temperature. Therefore, the temperature of the temperature control element 320 is relatively high, resulting in poor accuracy of the temperature detected by the temperature control element 320.

[0059] Based on this, in another optional embodiment, the over-temperature protection device 300 may further include a ventilation component, which can be used to exhaust the gas in the inner cavity 310a so that the temperature of the inner cavity 310a of the RF coil 100 is the same before each power-on. Each power-on of the RF coil 100 here means that when the semiconductor process chamber completes a process, the RF coil 100 is powered off, and when the next process is performed, the RF coil 100 is powered on again.

[0060] In this solution, after each processing step is completed, the gas in the inner cavity 310a can be discharged through the ventilation component, so that the temperature in the inner cavity 310a is reduced to the state before the first processing step, and the temperature in the inner cavity 310a is kept in the same state between each detection, thereby improving the temperature accuracy detected by the temperature control component 320.

[0061] Furthermore, the ventilation component may include a first pneumatic connector 410, a second pneumatic connector 420, a first control valve 430, a second control valve 440, a blowing mechanism 450 and an exhaust mechanism 460. The first pneumatic connector 410 and the second pneumatic connector 420 may both be arranged on the box body 310 and be connected to the inner cavity 310a. The first pneumatic connector 410 is connected to the blowing mechanism 450 through the first control valve 430, and the second pneumatic connector 420 is connected to the exhaust mechanism 460 through the second control valve 440. The blowing mechanism 450 may blow gas into the inner cavity 310a through the first control valve 430 and the first pneumatic connector 410, and the exhaust mechanism 460 may extract the gas from the inner cavity 310a through the second control valve 440 and the second pneumatic connector 420.

[0062] During specific operation, when the semiconductor processing chamber completes a process, the current to the RF coil 100 is stopped. The first and second control valves 430 and 440 are opened, and the air blowing mechanism 450 blows air in. The air extraction mechanism 460 provides negative pressure to extract the hot air from the inner cavity 310a. At this point, the air blowing mechanism 450 and the air extraction mechanism 460 form a convection cycle, thereby exhausting the hot air from the inner cavity 310a. When the semiconductor processing equipment is ready to perform another process, the first and second control valves 430 and 440 are closed.

[0063] In this solution, the blowing mechanism 450 is used to blow in cold air, and the exhaust mechanism 460 is used to exhaust hot air. Therefore, the blowing mechanism 450 and the exhaust mechanism 460 form a convection cycle, thereby increasing the exhaust rate of hot air in the inner cavity 310a and reducing the accumulation of hot air in the inner cavity 310a.

[0064] Optionally, the first pneumatic connector 410, the first control valve 430 and the blowing mechanism 450 may be connected via a pipeline. The second pneumatic connector 420, the second control valve 440 and the exhaust mechanism 460 may also be connected via a pipeline.

[0065] In the above embodiment, the upper electrode assembly is provided with an upper electrode housing 600, and the RF coil 100 and the over-temperature protection device 300 are both located within the upper electrode housing 600. The exhaust mechanism 460 and the blowing mechanism 450 can be located outside the housing. Therefore, to facilitate communication between the blowing mechanism 450 and the exhaust mechanism 460 and the inner cavity 310a of the box body 310, a first bulkhead connector 470 and a second bulkhead connector 480 can be installed on the sidewall of the upper electrode housing 600. One end of the first bulkhead connector 470 can be located within the upper electrode housing 600 and communicate with the first pneumatic connector 410 via a pipeline. The other end of the first bulkhead structure can be located outside the upper electrode housing 600 and communicate with the first control valve 430 via a pipeline. One end of the second partition joint 480 can be located inside the upper electrode housing 600 and connected to the second pneumatic joint 420 through a pipeline. The other end of the second partition joint 480 can be located outside the upper electrode housing 600 and connected to the second control valve 440 through a pipeline.

[0066] In the above embodiment, the box body 310 can be directly hung on the RF coil 100 . However, the box body 310 has a certain weight and is likely to pull the RF coil 100 , causing damage to the RF coil 100 .

[0067] Based on this, in another optional embodiment, the upper electrode assembly may further include a coil fixing plate 500. The RF coil 100 may be fixed to the coil fixing plate 500, and the box body 310 may be fixedly connected to the coil fixing plate 500. In this solution, the box body 310 may be fixed to the coil fixing plate 500, so that the box body 310 does not exert force on the RF coil 100, thereby preventing the RF coil 100 from being pulled and damaged.

[0068] In another optional embodiment, the power supply device may include a power supply 210, an RF power supply 220, and a matching device 230. The power supply 210 may be electrically connected to the RF power supply 220 via a temperature control element 320. When the temperature of the inner cavity 310a is greater than a preset temperature, the power supply 210 and the RF power supply 220 are disconnected, and the RF power supply 220 may be electrically connected to the RF coil 100 via the matching device 230. In this case, the power supply 210 supplies power to the RF power supply 220, and the voltage output by the RF power supply 220 is load-matched by the matching device 230 before being input to the RF coil 100, achieving energy transmission.

[0069] In this solution, the temperature control element 320 is disposed between the RF power source 220 and the power supply 210. When the temperature control element 320 is disconnected, the power supply source of the RF power source 220 is blocked, thereby improving the reliability of the blocking.

[0070] Specifically, when the temperature control member 320 includes the first terminal and the second terminal mentioned above, the first terminal 322 may be electrically connected to the power supply 210 , and the second terminal 323 may be electrically connected to the RF power supply 220 .

[0071] Based on the upper electrode assembly of any of the above embodiments of the present application, an embodiment of the present application further discloses a semiconductor process chamber, and the disclosed semiconductor process chamber has the upper electrode assembly of any of the above embodiments.

[0072] like Figure 8 As shown, the semiconductor process chamber further includes a chamber body 700 and a dielectric window 800 disposed above the chamber body 700 , and the upper electrode assembly is disposed above the dielectric window 800 .

[0073] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0074] The foregoing is merely an embodiment of the present invention and is not intended to limit the present invention. It will be apparent to those skilled in the art that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention are intended to be included within the scope of the claims of the present invention.

Claims

1. An upper electrode assembly, used in a semiconductor process chamber, characterized in that: The upper electrode assembly comprises a radio frequency coil (100), a power supply device and an over-temperature protection device (300); The over-temperature protection device (300) comprises a box body (310) and a temperature control component (320). The temperature control component (320) is arranged on the box body (310). The box body (310) is provided with an inner cavity (310a). At least a portion of the radio frequency coil (100) is located in the inner cavity (310a). The radio frequency coil (100) is electrically connected to the power supply device via the temperature control component (320). The temperature control component (320) is used to detect the temperature of the inner cavity (310a). When the temperature of the inner cavity (310a) is greater than a preset temperature, the temperature control component (320) is disconnected to disconnect the radio frequency coil (100) from the power supply device.

2. The upper electrode assembly according to claim 1, wherein: The box body (310) comprises a base (311) and an upper cover (312); the base (311) and the upper cover (312) enclose the inner cavity (310a) and a gap communicating with the inner cavity (310a); the base (311) and the upper cover (312) are detachably connected, and at least a portion of the radio frequency coil (100) passes through the gap.

3. The upper electrode assembly according to claim 2, wherein: The base (311) includes a bottom plate (3111) and a first side wall (3112) and a second side wall (3113) arranged on the same side of the bottom plate (3111), wherein the first side wall (3112) and the second side wall (3113) are arranged opposite to each other, and the upper cover (312) is provided with a top plate (3121) and a third side wall (3122) and a fourth side wall (3123) arranged on the same side of the top plate (3121), wherein the third side wall (3122) and the fourth side wall (3123) are arranged opposite to each other. It is configured that the third side wall (3122) and the fourth side wall (3123) are located between the first side wall (3112) and the second side wall (3113), the top plate (3121) is overlapped on the side of the first side wall (3112) and the second side wall (3113) facing away from the bottom plate (3111), and the gap is formed between the side of the fourth side wall (3123) and the third side wall (3122) facing away from the top plate (3121) and the bottom plate (3111).

4. The upper electrode assembly according to claim 3, wherein: The first side wall (3112) includes a first plate (3112a), a second plate (3112b), and a third plate (3112c) connected in sequence, and the second side wall (3113) includes a fourth plate (3113a), a fifth plate (3113b), and a sixth plate (3113c) connected in sequence; The first plate (3112a) and the third plate (3112c) are arranged opposite to each other, and the first plate (3112a) and the third plate (3112c) are both perpendicular to the second plate (3112b); The fourth plate (3113a) and the sixth plate (3113c) are arranged opposite to each other, and the fourth plate (3113a) and the sixth plate (3113c) are both perpendicular to the fifth plate (3113b); The second plate (3112b) and the fifth plate (3113b) are arranged opposite to each other; The first plate (3112a) is flush with the fourth plate (3113a), and the third plate (3112c) is flush with the sixth plate (3113c); The third side wall (3122) is located between the first plate (3112a) and the fourth plate (3113a), and the fourth side wall (3123) is located between the third plate (3112c) and the sixth plate (3113c).

5. The upper electrode assembly according to claim 1, wherein: The temperature control component (320) includes a main body (321), a first terminal (322), a second terminal (323) and a temperature measuring terminal (324). The first terminal (322) and the second terminal (323) are arranged on the same side of the main body (321) and are electrically connected to the main body (321). The temperature measuring terminal (324) is arranged on a side of the main body (321) away from the first terminal (322) and the second terminal (323). The first terminal (322) is electrically connected to the power supply device, and the second terminal (323) is electrically connected to the radio frequency coil (100). The box body (310) is provided with a through hole (310b). One end of the temperature measuring terminal (324) away from the main body (321) extends into the box body (310) through the through hole (310b). The temperature measuring terminal (324) is used to measure the temperature of the inner cavity (310a).

6. The upper electrode assembly according to claim 5, characterized in that The through hole (310b) is a stepped hole, and the main body (321) is provided with a stepped surface on a side facing the temperature measuring column (324), and the stepped surface is matched with the stepped hole.

7. The upper electrode assembly according to claim 1, wherein: The over-temperature protection device (300) further comprises a ventilation component, which is used to discharge the gas in the inner cavity (310a) so that the temperature of the inner cavity (310a) is the same before the radio frequency coil (100) is powered on each time.

8. The upper electrode assembly according to claim 7, wherein: The ventilation assembly comprises a first pneumatic joint (410), a second pneumatic joint (420), a first control valve (430), a second control valve (440), an air blowing mechanism (450) and an air extraction mechanism (460). The first pneumatic joint (410) and the second pneumatic joint (420) are both arranged on the box body (310) and communicated with the inner cavity (310a). The first pneumatic joint (410) is connected to the inner cavity (310a) through the first control valve (430). The blowing mechanism (450) is connected to the second pneumatic connector (420), and the second pneumatic connector (420) is connected to the exhaust mechanism (460) through the second control valve (440). The blowing mechanism (450) blows gas into the inner cavity (310a) through the first control valve (430) and the first pneumatic connector (410), and the exhaust mechanism (460) extracts gas from the inner cavity (310a) through the second control valve (440) and the second pneumatic connector (420).

9. The upper electrode assembly according to claim 1, wherein: The upper electrode assembly further comprises a coil fixing plate (500), the radio frequency coil (100) is fixed on the coil fixing plate (500), and the box body (310) is fixedly connected to the coil fixing plate (500).

10. The upper electrode assembly according to claim 1, wherein: The power supply device comprises a power supply (210), a radio frequency power supply (220), and a matcher (230); the power supply (210) and the radio frequency power supply (220) are electrically connected via the temperature control component (320); the radio frequency power supply (220) and the radio frequency coil (100) are electrically connected via the matcher (230); and when the temperature of the inner cavity (310a) is greater than the preset temperature, the power supply (210) and the radio frequency power supply (220) are disconnected.

11. A semiconductor process chamber, comprising a chamber body (700) and a dielectric window (800) disposed above the chamber body (700), characterized in that: It also includes an upper electrode assembly according to any one of claims 1 to 10, wherein the upper electrode assembly is arranged above the dielectric window (800).

Images