Substrate container with enhanced internal flow field

Abstract

This invention discloses a substrate container with enhanced internal flow field, comprising a housing, at least one offset inflation mechanism, and at least one gas diffusion mechanism. The offset inflation mechanism is disposed outside the internal accommodating space of the housing and has an air chamber parallel to the bottom plate. The gas diffusion mechanism includes a base, a partition wall, and at least one diffusion member. The base covers the air outlet of the air chamber to form a secondary air chamber. The partition wall extends perpendicularly to the bottom plate to form a vertical first gas channel, which communicates with the secondary air chamber. The diffusion member and the partition wall are clamped together to form a second gas channel. The partition wall has at least one pore to connect the first gas channel and the second gas channel. This invention improves the problem of the flow field of the substrate container being limited to the bottom, enhances the internal flow field of the substrate container, and maintains the quality of the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate container, and more particularly to a substrate container that can enhance the internal flow field. Background Technology

[0002] In the manufacturing industry, substrates (such as wafers, glass substrates, circuit boards, or other types of substrates) undergo multiple processes, and substrate containers are used for storage and transportation between these processes. Therefore, the cleanliness of the substrate containers is also very important. In addition, after the substrates have undergone the processes, residual moisture, dust particles, and heat may still remain on their surfaces when stored in substrate containers. The traditional approach is to blow air into the container from the bottom (relative to the front used for opening and closing), allowing the airflow to move from the back to the front, carrying away moisture, dust particles, and heat. For example, the cleaning module of the wafer transport device described in Taiwanese invention patent TWI567856. However, most of the gas flow exists only near the bottom of the substrate container; the airflow is very weak or even stagnant in the area above the first substrate. Furthermore, setting up special gas channels to enhance the flow field occupies the existing storage space of the substrate container, reducing the total number of substrates that a single container can store, thus indirectly increasing the cost of substrate storage. Summary of the Invention

[0003] The purpose of this invention is to solve the various problems of existing substrate containers and to propose a substrate container that enhances the internal flow field.

[0004] To achieve the above and other objectives, the present invention provides a substrate container for enhancing the internal flow field, comprising: a housing having a front cover, a back plate opposite to the front cover, a bottom plate and a top plate connecting the front cover and the back plate, the front cover, the back plate, the bottom plate and the top plate being sandwiched to form an internal accommodating space; at least one offset inflation mechanism disposed outside the internal accommodating space, the offset inflation mechanism having an air chamber parallel to the bottom plate, one end of the air chamber having an air inlet opposite to the housing, and the other end of the air chamber having at least one air outlet penetrating the bottom plate. An air outlet is adjacent to the back plate; and at least one gas diffusion mechanism is adjacent to the back plate. The gas diffusion mechanism includes a base, an isolation wall, and at least one diffusion member. The base covers the at least one air outlet to form a secondary gas chamber. The isolation wall extends perpendicularly to the base plate to form a vertical first gas channel. The first gas channel communicates with the secondary gas chamber. The at least one diffusion member is disposed on at least one side of the isolation wall. The diffusion member and the isolation wall are sandwiched to form a second gas channel. The isolation wall has at least one pore to communicate the first gas channel and the second gas channel.

[0005] Optionally, the second gas passage is not directly connected to the auxiliary gas chamber.

[0006] Optionally, the diffusion member has a plurality of through holes on the surface facing the front cover so that gas from the first gas channel flows to the front cover through the through holes.

[0007] Optionally, the isolation wall and the diffusion component are integrally formed.

[0008] Optionally, the opening in the partition wall is the gap between the partition wall and the back panel.

[0009] Optionally, it also includes a central support mechanism, wherein the offset inflation mechanism and the gas diffusion mechanism are each in two sets, and the central support mechanism is disposed between the two sets of gas diffusion mechanisms.

[0010] Optionally, the partition wall and the back panel are integrally formed.

[0011] Optionally, the pores in the isolation wall are the gaps between the isolation wall and the diffusion member.

[0012] Optionally, it also includes an airtight component disposed between the partition wall and the box.

[0013] Optionally, the backplate, the partition wall, and the diffusion component are integrally formed, and the pores are holes that penetrate the partition wall.

[0014] Therefore, the substrate container of the present invention, which enhances the internal flow field, has a strong airflow blowing from the rear of the container towards the front cover in the height direction. This significantly enhances the flow field inside the container, rather than limiting the flow to the area near the bottom. This effectively removes residual moisture, dust particles, and residual heat, maintaining the quality of the substrate. Furthermore, while enhancing the flow field, the offset inflation mechanism and gas diffusion mechanism of the present invention do not occupy existing substrate storage space.

[0015] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the invention. However, these descriptions and drawings are only for illustrating the present invention and are not intended to limit the scope of the invention in any way. Attached Figure Description

[0016] Figure 1 This is a cross-sectional schematic diagram of a substrate container for enhancing the internal flow field according to the first embodiment of the present invention;

[0017] Figure 2 This is a partial cross-sectional schematic diagram of the substrate container for enhancing the internal flow field according to the first embodiment of the present invention.

[0018] Figure 3 for Figure 2 Another perspective illustration;

[0019] Figure 4 This is a three-dimensional schematic diagram of the gas diffusion mechanism according to the first embodiment of the present invention;

[0020] Figure 5 This is a schematic diagram of the assembly of the substrate container for enhancing the internal flow field according to the second embodiment of the present invention;

[0021] Figure 6 This is a three-dimensional schematic diagram of the gas diffusion mechanism according to the second embodiment of the present invention;

[0022] Figure 7 This is a front view schematic diagram of a substrate container for enhancing the internal flow field according to a second embodiment of the present invention;

[0023] Figure 8 This is a partial perspective view of the isolation wall according to the third embodiment of the present invention.

[0024] [Symbol Explanation]

[0025] 100 Substrate Containers for Enhancing Internal Flow Field

[0026] 100a Substrate container for enhancing internal flow field

[0027] 1. Box

[0028] 11 Front Cover

[0029] 12 Back panel

[0030] 13. Base plate

[0031] 14. Top Slab

[0032] 15 Side panels

[0033] 151 Extension

[0034] 1a Box

[0035] 2 Off-center inflation mechanism

[0036] 21 air chambers

[0037] 21' Auxiliary gas chamber

[0038] 211 Air Inlet

[0039] 212 Air outlet

[0040] 3. Gas diffusion mechanism

[0041] 31 Base

[0042] 31a base

[0043] 32. Separation wall

[0044] 321 First Gas Channel

[0045] 321a First Gas Passage

[0046] 321b First Gas Passage

[0047] 322 Second Gas Channel

[0048] 322a Second Gas Channel

[0049] 322b Second Gas Channel

[0050] 323 Pores

[0051] 323a Pores

[0052] 323b Pores

[0053] 32a Separation Wall

[0054] 32b Separation Wall

[0055] 33 Diffusion components

[0056] 331 Through Hole

[0057] 331a Through Hole

[0058] 331b Through Hole

[0059] 33a Diffusion component

[0060] 33b Diffusion component

[0061] 34 Airtight components

[0062] 4. Central Support Institutions

[0063] S Internal accommodating space Detailed Implementation

[0064] To fully understand the present invention, the following specific embodiments, in conjunction with the accompanying drawings, will provide a detailed description of the invention. Those skilled in the art can understand the purpose, features, and effects of the invention from the content disclosed in this specification. It should be noted that the present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the spirit of the invention. Furthermore, the accompanying drawings are for simple illustration only and are not depictions based on actual dimensions. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the claims of the present invention. The following is an explanation:

[0065] like Figure 1 As shown, the substrate container 100 for enhancing the internal flow field according to the first embodiment of the present invention includes: a box body 1, at least one offset inflation mechanism 2 and at least one gas diffusion mechanism 3.

[0066] The box body 1 has a front cover 11, a back plate 12 opposite to the front cover 11, a bottom plate 13 and a top plate 14 connecting the front cover 11 and the back plate 12. The box body 1 may also have multiple side plates (not shown in the figure), and the front cover 11, the back plate 12, the bottom plate 13 and the top plate 14 are clamped together to form an internal accommodating space S.

[0067] like Figures 1 to 3 As shown (where Figure 3 (Back panel 12 omitted). The offset inflation mechanism 2 is located outside the internal accommodating space S and has an air chamber 21 parallel to the base plate 13. One end of the air chamber 21 has an air inlet 211 facing away from the housing 1 to receive a high-pressure gas source from the outside. The air inlet 211 can be a quick-connect gas connector, employing, for example, the cleaning module of the wafer transfer device described in Taiwan Patent No. TWI567856, to inject high-pressure gas into the air chamber 21. The other end of the air chamber 21 has at least one air outlet 212 penetrating the base plate 13, adjacent to the back panel 12.

[0068] A gas diffusion mechanism 3 is adjacent to the back plate 12. The gas diffusion mechanism 3 includes a base 31, an isolation wall 32, and at least one diffusion member 33. The base 31 covers the gas outlet 212 to form a secondary gas chamber 21'. The isolation wall 32 extends perpendicularly to the bottom plate 13 to form a vertical first gas channel 321, which communicates with the secondary gas chamber 21'. In this embodiment, the gas chamber 21 has two gas outlets 212, and the base 31 covers these two gas outlets 212 to form the secondary gas chamber 21'. Multiple gas outlets 212 can help the aforementioned high-pressure gas source enter the secondary gas chamber 21' more evenly through the gas chamber 21, so that the gas chamber 21 and the secondary gas chamber 21' can have approximately equal high pressure, which is the pressure relative to the internal accommodating space S. However, the invention is not limited to this; there may be one or more gas outlets 212, and the gas outlets 212 may also be achieved by using a porous material.

[0069] like Figure 3 and Figure 4 As shown, at least one diffusion member 33 is disposed on at least one side of the isolation wall 32. The diffusion member 33, the isolation wall 32, and the back plate 12 are sandwiched to form a second gas channel 322. In other words, the second gas channel 322 is disposed on one side of the first gas channel 321 and is separated by the isolation wall 32. The isolation wall 32 has at least one aperture 323 to connect the first gas channel 321 and the second gas channel 322. In this embodiment, the second gas channel 322 is not directly connected to the auxiliary gas chamber 21', and the second gas channel 322 is connected to the internal accommodating space S through the diffusion member 33.

[0070] Therefore, when high-pressure gas fills the auxiliary gas chamber 21' adjacent to the back plate 12 through the gas chamber 21, the auxiliary gas chamber 21' is under high pressure. The only direct path connecting the auxiliary gas chamber 21' to the first gas channel 321 allows the high-pressure gas to enter the first gas channel 321 rapidly. Furthermore, since the gap 323 between the first gas channel 321 and the second gas channel 322 is relatively small, the leaked gas does not significantly affect the pressure of the first gas channel 321. Therefore, under continuous high-pressure gas injection, the first gas channel 321 as a whole remains under high pressure relative to the internal accommodating space S. However, the present invention is not limited to this.

[0071] High-pressure gas from the first gas channel 321 enters the second gas channel 322 through the pores 323. Preferably, the pores 323 are distributed along the height direction (Z-axis direction) from the bottom of the first gas channel 321. Since the first gas channel 321 is entirely under high pressure in the height direction, even at the top of the first gas channel 321, high-pressure gas still enters the second gas channel 322 through the pores 323, forming a strong airflow. In other words, since the second gas channel 322 is not directly connected to the auxiliary gas chamber 21', the second gas channel 322 unilaterally receives gas from the first gas channel 321 and diffuses it into the internal accommodating space S. Because there is a strong airflow in the Z-axis direction from the first gas channel 321 through the second gas channel 322 into the internal accommodating space S and blowing towards the front cover 11, the flow field inside the housing 1 is greatly enhanced, and is not limited to the flow near the bottom plate 13 near the air inlet 211.

[0072] Furthermore, such as Figure 3 and Figure 4 As shown, in this embodiment, the surface of the diffuser 33 facing the front cover 11 is provided with a plurality of through holes 331, so that gas from the first gas channel 321 flows through the through holes 331 to the internal accommodating space S. However, the present invention is not limited thereto, and the surface of the diffuser 33 facing the front cover 11 may be a porous material.

[0073] Furthermore, such as Figure 4 As shown, in this embodiment, there are two diffusion members 33, which are disposed on opposite sides of the isolation wall 32.

[0074] Furthermore, such as Figure 4 As shown, in this embodiment, the isolation wall 32 and the diffusion member 33 are integrally formed. In this case, the pores 323 of the isolation wall 32 are actually the gaps between the isolation wall 32 and the back plate 12. However, the present invention is not limited to this. The isolation wall 32 and the diffusion member 33 can also be two separately manufactured components, bonded or welded together in other ways, or kept airtight by other airtight components.

[0075] Furthermore, in this embodiment, the offset inflation mechanism 2 and the gas diffusion mechanism 3 are each in two sets. For example... Figure 1 As shown, a central support mechanism 4 can be provided between the two sets of offset inflation mechanisms 2 and gas diffusion mechanisms 3. The central support mechanism 4 is, for example, the rear support unit of Taiwan Utility Model Patent No. TWM588108, used to assist in supporting the central area of ​​the substrate.

[0076] The present invention further proposes a second embodiment. For example... Figures 5 to 7 As shown, the difference between the substrate container 100a with enhanced internal flow field in the second embodiment and the substrate container 100 with enhanced internal flow field in the first embodiment is that the substrate container 100a with enhanced internal flow field has multiple offset inflation mechanisms 2, bases 31a, and isolation walls 32a. The diffusion member 33a is connected to multiple isolation walls 32a, so that the second gas channel 322a is connected to multiple first gas channels 321a. In this embodiment, there are two offset inflation mechanisms 2, bases 31a, and isolation walls 32a. The two isolation walls 32a are respectively disposed on both sides of the diffusion member 33a, so that the two sides of the second gas channel 322a are connected to two first gas channels 321a respectively. However, the present invention is not limited to this, and there may be three or more isolation walls 32a surrounding multiple sides of the diffusion member 33a.

[0077] In this embodiment, the isolation wall 32a and the back plate 12 are integrally formed, and the base 31a can also be integrally formed on the isolation wall 32a and the back plate 12.

[0078] The box body 1a has a side plate 15, and the extension 151 of the side plate 15 is clamped with the partition wall 32a to form a first gas channel 321a. The extension 151 can also be regarded as a back plate partially connected to the side plate 15.

[0079] Similarly, high-pressure gas enters the auxiliary gas chamber formed by the base 31a and the bottom plate 13 through the vent of the offset inflation mechanism 2, and then enters the first gas channel 321a formed by the clamping of the isolation wall 32a and the extension 151. The high-pressure gas forms a strong airflow through the pores 323a and enters the second gas channel 322a formed by the clamping of the back plate 12, the isolation wall 32a and the diffuser 33a, and then flows to the front cover through multiple through holes 331a.

[0080] Furthermore, in this embodiment, as Figure 5 As shown, the substrate container 100a that enhances the internal flow field also includes an airtight member 34 disposed between the isolation wall 32a and the extension 151 to maintain the airtightness between the isolation wall 32a and the extension 151. The airtight member 34 may be a silicone strip.

[0081] In this embodiment, since the isolation wall 32a and the back plate 12 are integrally formed, the pores 323a of the isolation wall 32a are actually the gaps between the isolation wall 32a and the diffusion member 33a. However, the present invention is not limited thereto.

[0082] like Figure 8 As shown, in the third embodiment of the present invention, the back plate 12, the isolation wall 32b, and the diffusion member 33b are integrally formed (or can be maintained airtight by other means). The pores 323b of the isolation wall 32b are holes penetrating the isolation wall 32b, rather than gaps between the isolation wall 32b and any other component. High-pressure gas enters the second gas channel 322b from the first gas channel 321b through the pores 323b, and then flows to the front cover through the through holes 331b of the diffusion member 33b. The pores 323b can be made of porous material.

[0083] The present invention has been disclosed above with reference to preferred embodiments. However, those skilled in the art should understand that the embodiments are for illustrative purposes only and should not be construed as limiting the scope of the invention. It should be noted that all variations and substitutions equivalent to the described embodiments should be included within the scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A substrate container for enhancing an internal flow field, characterized by, The substrate container for enhancing the internal flow field comprises: a box body having a front cover, a back plate opposite to the front cover, a bottom plate connecting the front cover and the back plate, and a top plate, the front cover, the back plate, the bottom plate and the top plate clamping to form an internal accommodation space; at least one bias inflation mechanism arranged outside the internal accommodation space, the bias inflation mechanism having a gas chamber parallel to the bottom plate, one end of the gas chamber having an air inlet opposite to the box body, the other end of the gas chamber having a plurality of air outlets penetrating the bottom plate, the plurality of air outlets being adjacent to the back plate; and at least one gas diffusion mechanism adjacent to the back plate, the gas diffusion mechanism comprising two bases, two isolation walls and two diffusion members, the two bases covering the plurality of air outlets to form a secondary gas chamber, the two isolation walls extending perpendicularly to the bottom plate and forming a vertical first gas channel with two sides facing each other, the first gas channel communicating with the secondary gas chamber, the two diffusion members being arranged on the two sides of the two isolation walls opposite to each other, and each diffusion member clamping with a same-side isolation wall to form a second gas channel, the two isolation walls having at least one aperture, the at least one aperture communicating the first gas channel and the two second gas channels; wherein, the arrangement direction of the first gas channel and the two second gas channels is parallel to the surface of the back plate, the first gas channel and the two second gas channels are parallel and adjacent to the back plate, and the first and second of the two second gas channels are arranged on opposite sides of the first gas channel.

2. The substrate container with enhanced internal flow field of claim 1, wherein, Each of the second gas channels is not directly communicated with the secondary gas chamber.

3. The substrate container with enhanced internal flow field of claim 1, wherein, The two diffusion members are provided with a plurality of through holes towards the surface of the front cover, so that the gas from the first gas channel flows to the front cover through the through holes.

4. The substrate container with enhanced internal flow field of claim 1, wherein, The two isolation walls and the two diffusion members are integrally formed.

5. The substrate container with enhanced internal flow field of claim 1, wherein, The aperture of the isolation wall is a gap between the isolation wall and the back plate.

6. The substrate container with enhanced internal flow field of claim 1, wherein, Further comprising a central support mechanism, the bias inflation mechanism and the gas diffusion mechanism each being two groups, the central support mechanism being arranged between the two groups of gas diffusion mechanisms.

7. The substrate container with enhanced internal flow field of claim 1, wherein, The two isolation walls and the back plate are integrally formed.

8. The substrate container with enhanced internal flow field of claim 7, wherein, The aperture of the isolation wall is a gap between the isolation wall and the diffusion member.

9. The substrate container with enhanced internal flow field of claim 1, wherein, Further comprising a gas-tight member arranged between the isolation wall and the box body.

10. The substrate container with enhanced internal flow field of claim 1, wherein, The back plate, the two isolation walls and the two diffusion members are integrally formed, and the aperture is a hole penetrating the isolation wall. The back plate, the two isolation walls and the two diffusion members are integrally formed, and the aperture is a hole penetrating the isolation wall.

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