Epitaxial structure with quantum dot layer and manufacturing method thereof and light-emitting diode chip

Abstract

The present invention provides an epitaxial structure with a quantum dot layer, a method for manufacturing the same, and a light-emitting diode chip. The quantum dot active layer is used as the active region. Since the quantum dot layer itself has a three-dimensional limiting effect on carriers, the light-emitting efficiency of the light-emitting diode chip can be improved, and a higher brightness can be achieved even at a low current. In addition, the present invention uses the quantum dot active layer as the active region, and there is no need to increase the Al component in order to obtain a shorter light-emitting wavelength, thereby ensuring that the internal quantum efficiency of the light-emitting diode chip is high. In addition, the present invention makes the In component of the non-doped layer larger than the In component of the N-type barrier layer, so that there is a large positive mismatch between the non-doped layer and the base material, which provides better conditions for the growth of the quantum dot layer, thereby improving the manufacturing quality of the light-emitting diode chip.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and more specifically, to an epitaxial structure with a quantum dot layer, a manufacturing method thereof, and a light emitting diode chip. Background Art

[0002] In recent years, with the rapid development of AlGaInP-based light-emitting diode chips, traditional devices with multi-quantum wells as active region structures have also become quite mature. X Ga 1-X ) 0.5 In 0.5 P material has a wide band gap. As the Al component changes in the range of 0 to 0.5, the emission wavelength can change from 650nm red light to 550nm yellow-green light. As the wavelength becomes shorter, the Al component needs to be continuously increased, but the increase in the Al component will cause the AlGaInP material to change from a direct band gap to an indirect band gap, resulting in lower internal quantum efficiency and low device brightness. In addition, the peak efficiency of micro-sized light-emitting diode chips will shift to large currents, and the luminous efficiency will drop sharply under small currents. Therefore, how to improve the luminous efficiency of the device is a major problem facing current micro-light-emitting diode chips. Summary of the invention

[0003] In view of this, the present invention provides an epitaxial structure with a quantum dot layer, a manufacturing method thereof, and a light-emitting diode chip, which effectively solve the technical problems existing in the prior art, improve the luminous efficiency of the light-emitting diode chip, improve the manufacturing quality of the light-emitting diode chip, and ensure that the internal quantum efficiency of the light-emitting diode chip is high.

[0004] To achieve the above purpose, the technical solution provided by the present invention is as follows:

[0005] An epitaxial structure having a quantum dot layer, comprising:

[0006] N-type confinement layer;

[0007] An N-type barrier layer located on one side of the N-type restriction layer;

[0008] A quantum dot active layer located on a side of the N-type barrier layer away from the N-type confinement layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer and a cap layer stacked in sequence, the non-doped layer is located on a side close to the N-type barrier layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer;

[0009] A P-type barrier layer located on a side of the quantum dot active layer away from the N-type confinement layer;

[0010] A P-type confinement layer is located on a side of the P-type barrier layer away from the N-type confinement layer.

[0011] Optionally, the N-type barrier layer is an N-type AlGaInP barrier layer, and the undoped layer is an undoped AlGaInP layer;

[0012] Wherein, the growth temperature of the non-doped layer is lower than the growth temperature of the N-type barrier layer.

[0013] Optionally, the thickness of the undoped layer ranges from 20 to 80 angstroms, including endpoint values.

[0014] Optionally, the epitaxial structure further includes:

[0015] A current spreading layer located on a side of the N-type limiting layer away from the N-type blocking layer;

[0016] An ohmic contact layer is located on a side of the current spreading layer away from the N-type barrier layer.

[0017] Optionally, the epitaxial structure further includes:

[0018] An etching stop layer located on a side of the ohmic contact layer away from the N-type barrier layer;

[0019] a buffer layer located on a side of the corrosion stop layer away from the N-type barrier layer;

[0020] A temporary substrate is located on a side of the buffer layer away from the N-type barrier layer.

[0021] Optionally, the epitaxial structure further includes:

[0022] A transition layer located on a side of the P-type restriction layer away from the N-type restriction layer;

[0023] A window layer is located on a side of the transition layer away from the N-type confinement layer.

[0024] Optionally, the In component of the non-doped layer is greater than the In component of the N-type confinement layer.

[0025] Correspondingly, the present invention also provides a method for manufacturing an epitaxial structure having a quantum dot layer, which is used to manufacture the above-mentioned epitaxial structure having a quantum dot layer, and the manufacturing method comprises:

[0026] Growing an N-type barrier layer on one side of the N-type confinement layer;

[0027] A quantum dot active layer is grown on the side of the N-type barrier layer away from the N-type confinement layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer and a cap layer stacked in sequence, the non-doped layer is located on a side close to the N-type barrier layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer;

[0028] Growing a P-type barrier layer on the side of the quantum dot active layer away from the N-type confinement layer;

[0029] A P-type confinement layer is grown on a side of the P-type barrier layer away from the N-type confinement layer.

[0030] Optionally, the N-type barrier layer is an N-type AlGaInP barrier layer, and the undoped layer is an undoped AlGaInP layer, wherein the method for manufacturing the undoped layer includes:

[0031] After the growth of the N-type barrier layer is completed, the growth temperature of the growth chamber is lowered to grow the non-doped layer.

[0032] Correspondingly, the present invention further provides a light-emitting diode chip, which includes the above-mentioned epitaxial structure with a quantum dot layer.

[0033] Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

[0034] The present invention provides an epitaxial structure with a quantum dot layer, a manufacturing method thereof and a light-emitting diode chip, comprising: an N-type confinement layer; an N-type barrier layer located on one side of the N-type confinement layer; a quantum dot active layer located on the side of the N-type barrier layer away from the N-type confinement layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer and a cap layer stacked in sequence, the non-doped layer is located on a side close to the N-type barrier layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer; a P-type barrier layer located on the side of the quantum dot active layer away from the N-type confinement layer; and a P-type confinement layer located on the side of the P-type barrier layer away from the N-type confinement layer.

[0035] From the above content, it can be seen that the technical solution provided by the present invention uses the quantum dot active layer as the active region. Since the quantum dot layer itself has a three-dimensional limiting effect on carriers, it can improve the luminous efficiency of the light-emitting diode chip and achieve a higher brightness even at a low current. In addition, the present invention uses the quantum dot active layer as the active region, and there is no need to increase the Al component in order to obtain a shorter luminous wavelength, thereby ensuring a high internal quantum efficiency of the light-emitting diode chip.

[0036] Furthermore, the present invention makes the In component of the non-doped layer greater than the In component of the N-type barrier layer, so that there is a large positive mismatch between the non-doped layer and the substrate material, which provides better conditions for the growth of the quantum dot layer, thereby improving the manufacturing quality of the light-emitting diode chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0038] Figure 1 A schematic diagram of the structure of an epitaxial structure with a quantum dot layer provided by an embodiment of the present invention;

[0039] Figure 2 A schematic diagram of another epitaxial structure with a quantum dot layer provided by an embodiment of the present invention;

[0040] Figure 3 A schematic diagram of the structure of another epitaxial structure with a quantum dot layer provided in an embodiment of the present invention;

[0041] Figure 4 A flow chart of a method for manufacturing an epitaxial structure having a quantum dot layer provided by an embodiment of the present invention;

[0042] Figure 5a-5d for Figure 4 Schematic diagram of the corresponding structure of each step. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0044] As mentioned in the background technology, in recent years, with the rapid development of AlGaInP-based light-emitting diode chips, traditional devices with multi-quantum wells as active region structures have also become quite mature. X Ga 1-X ) 0.5 In 0.5 P material has a wide band gap. As the Al component changes in the range of 0 to 0.5, the emission wavelength can change from 650nm red light to 550nm yellow-green light. As the wavelength becomes shorter, the Al component needs to be continuously increased, but the increase in the Al component will cause the AlGaInP material to change from a direct band gap to an indirect band gap, resulting in lower internal quantum efficiency and low device brightness. In addition, the peak efficiency of micro-sized light-emitting diode chips will shift to large currents, and the luminous efficiency will drop sharply under small currents. Therefore, how to improve the luminous efficiency of the device is a major problem facing current micro-light-emitting diode chips.

[0045] In order to improve the luminous efficiency of devices, quantum dot materials have attracted widespread attention due to their excellent properties such as adjustable luminous wavelength, pure chromaticity, and high quantum efficiency. Quantum dots are semiconductor nanoparticles with a diameter of 1 to 100 nm, which can confine electrons and holes in microcrystals in three dimensions, thereby effectively improving the luminous efficiency and achieving high brightness even under low currents. In addition, the luminous wavelength is determined by the size and shape of the quantum dots, avoiding the risk of reduced internal quantum efficiency in the traditional structure of using AlGaInP quantum wells as the active area to increase the Al component in order to obtain a short wavelength. However, the preparation quality of existing quantum dots is not high and needs to be improved.

[0046] Based on this, the embodiments of the present invention provide an epitaxial structure with a quantum dot layer, a manufacturing method thereof, and a light-emitting diode chip, which effectively solve the technical problems existing in the prior art, improve the luminous efficiency of the light-emitting diode chip, improve the manufacturing quality of the light-emitting diode chip, and ensure that the internal quantum efficiency of the light-emitting diode chip is high.

[0047] To achieve the above purpose, the technical solution provided by the embodiment of the present invention is as follows, specifically combined with Figures 1 to 5d The technical solution provided by the embodiment of the present invention is described in detail.

[0048] refer to Figure 1 FIG. 1 is a schematic diagram of a structure of an epitaxial structure having a quantum dot layer provided by an embodiment of the present invention, wherein the epitaxial structure includes:

[0049] N-type confinement layer 110 .

[0050] The N-type barrier layer 120 is located on one side of the N-type limiting layer 110 .

[0051] A quantum dot active layer 130 is located on a side of the N-type barrier layer 120 away from the N-type confinement layer 110, wherein the quantum dot active layer 130 includes an undoped layer 131, a quantum dot layer 132 and a cap layer 133 stacked in sequence, the undoped layer 131 is located on a side close to the N-type barrier layer 120, and the In component of the undoped layer 131 is greater than the In component of the N-type barrier layer 120.

[0052] A P-type barrier layer 140 is located on a side of the quantum dot active layer 130 away from the N-type confinement layer 110 .

[0053] The P-type confinement layer 150 is located on a side of the P-type barrier layer 140 away from the N-type confinement layer 110 .

[0054] It should be noted that the quantum dot active layer provided in the embodiment of the present invention may be a single quantum dot active layer or a superposition structure of multiple quantum dot active layers, which needs to be specifically selected according to the actual application.

[0055] It can be understood that the technical solution provided by the embodiment of the present invention uses the quantum dot active layer as the active region. Since the quantum dot layer itself has a three-dimensional limiting effect on carriers, it can improve the luminous efficiency of the light-emitting diode chip and achieve a higher brightness even at a low current. In addition, the embodiment of the present invention uses the quantum dot active layer as the active region, and there is no need to increase the Al component in order to obtain a shorter luminous wavelength, thereby ensuring a high internal quantum efficiency of the light-emitting diode chip.

[0056] In addition, the embodiment of the present invention makes the In component of the non-doped layer greater than the In component of the N-type barrier layer, so that there is a large positive mismatch between the non-doped layer and the substrate material, which provides better conditions for the growth of the quantum dot layer, thereby improving the manufacturing quality of the light-emitting diode chip. Furthermore, the In component of the non-doped layer provided by the embodiment of the present invention is also greater than the In component of the N-type confinement layer, further ensuring that there is a large positive mismatch between the non-doped layer and the substrate material, ensuring that the growth conditions provided for the quantum dot layer are better.

[0057] In one embodiment of the present invention, the N-type barrier layer provided by the present invention is an N-type AlGaInP barrier layer, and the undoped layer is an undoped AlGaInP layer; wherein the growth temperature of the undoped layer is lower than the growth temperature of the N-type barrier layer.

[0058] Furthermore, the thickness of the non-doped layer provided in the embodiment of the present invention may range from 20 to 80 angstroms, including end points.

[0059] In one embodiment of the present invention, the epitaxial structure provided by the present invention may further include more optimized layers to improve the performance of the epitaxial structure. Figure 2 FIG. 1 is a schematic diagram of another epitaxial structure with a quantum dot layer provided in an embodiment of the present invention, wherein the epitaxial structure provided in an embodiment of the present invention further includes:

[0060] The current spreading layer 160 is located on a side of the N-type limiting layer 110 away from the N-type barrier layer 120 .

[0061] An ohmic contact layer 170 is located on a side of the current spreading layer 160 away from the N-type barrier layer 120 .

[0062] Further integration Figure 2 As shown, the epitaxial structure provided by the present invention also includes:

[0063] The transition layer 180 is located on a side of the P-type confinement layer 150 away from the N-type confinement layer 110 .

[0064] The window layer 190 is located on a side of the transition layer 180 away from the N-type confinement layer 110 .

[0065] Furthermore, the epitaxial structure provided in the embodiment of the present invention can also be used as an intermediate structure to be bonded with other structures. Figure 3 FIG. 1 is a schematic diagram of a structure of another epitaxial structure having a quantum dot layer provided in an embodiment of the present invention, wherein the epitaxial structure provided in an embodiment of the present invention further includes:

[0066] An etching stop layer 210 is located on a side of the ohmic contact layer 170 away from the N-type barrier layer 120 .

[0067] The buffer layer 220 is located on a side of the etching stop layer 210 away from the N-type barrier layer 120 .

[0068] A temporary substrate 230 is located on a side of the buffer layer 220 away from the N-type barrier layer 120 .

[0069] It will be appreciated that after the epitaxial structure is bonded to other permanent substrate structures, the etch stop layer, the buffer layer and the temporary substrate may be removed.

[0070] Correspondingly, an embodiment of the present invention further provides a method for manufacturing an epitaxial structure having a quantum dot layer, which is used to manufacture the above-mentioned epitaxial structure having a quantum dot layer. Figure 4 FIG. 1 is a flow chart of a method for manufacturing an epitaxial structure having a quantum dot layer provided by an embodiment of the present invention, wherein the manufacturing method comprises:

[0071] S1. Growing an N-type barrier layer on one side of the N-type confinement layer.

[0072] S2. A quantum dot active layer is grown on the side of the N-type barrier layer away from the N-type confinement layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer and a cap layer stacked in sequence, the non-doped layer is located on the side close to the N-type barrier layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer. The quantum dot active layer can be a single quantum dot active layer or a stacked structure of multiple quantum dot active layers, which needs to be specifically selected according to the actual application.

[0073] S3, growing a P-type barrier layer on a side of the quantum dot active layer away from the N-type confinement layer.

[0074] S4, growing a P-type confinement layer on a side of the P-type barrier layer away from the N-type confinement layer.

[0075] The manufacturing method provided by the embodiment of the present invention is described in more detail below with reference to the accompanying drawings. Figure 5a-5d As shown, Figure 4 Schematic diagram of the corresponding structure of each step.

[0076] like Figure 5a As shown, corresponding to step S1 , an N-type barrier layer 120 is grown on one side of the N-type restriction layer 110 .

[0077] In one embodiment of the present invention, the epitaxial structure provided by the present invention may further include more optimized layers, such as a current spreading layer located on the side of the N-type limiting layer away from the N-type barrier layer; and an ohmic contact layer located on the side of the current spreading layer away from the N-type barrier layer. Furthermore, the epitaxial structure provided by the embodiment of the present invention may also be used as an intermediate structure to bond with other structures. Among them, the epitaxial structure provided by the embodiment of the present invention also includes: an etching stop layer located on the side of the ohmic contact layer away from the N-type barrier layer. A buffer layer located on the side of the etching stop layer away from the N-type barrier layer. A temporary substrate located on the side of the buffer layer away from the N-type barrier layer.

[0078] That is, the manufacturing method provided by the embodiment of the present invention can first provide a temporary substrate, which can be a GaAs inverted 15° substrate, and place it in a reaction chamber. After heating the reaction chamber, first grow a buffer layer on the temporary substrate, the buffer layer can be a GaAs buffer layer, the doping element can be Si / Te, and the doping concentration can be 1 to 5E18. Grow an etching stop layer on the buffer layer, the etching stop layer can be a GaInP etching stop layer, the doping element can be Si / Te, and the doping concentration can be 1 to 5E18. Grow an ohmic contact layer on the etching stop layer, the ohmic contact layer can be a GaAs ohmic contact layer, the doping element can be Si / Te, and the doping concentration can be 1 to 5E18. Grow a current spreading layer on the ohmic contact layer, the current spreading layer can be an AlGaInP current spreading layer, the doping element can be Si / Te, and the doping concentration can be 1 to 5E18. An N-type confinement layer with a thickness of 2000-60000 angstroms (including end values) is grown on the current spreading layer. The N-type confinement layer may be an N-type AlInP confinement layer. The doping element may be Si / Te. The doping concentration may be 1-3E18. Then, an N-type barrier layer is grown on the N-type confinement layer. The N-type barrier layer may be an N-type AlGaInP barrier layer.

[0079] like Figure 5bAs shown, corresponding to step S2, a quantum dot active layer 130 is grown on the side of the N-type barrier layer 120 away from the N-type confinement layer 110, wherein the quantum dot active layer 130 includes a non-doped layer 131, a quantum dot layer 132 and a capping layer 133 stacked in sequence, the non-doped layer 131 is located on a side close to the N-type barrier layer 120, and the In component of the non-doped layer 131 is greater than the In component of the N-type barrier layer 120.

[0080] In one embodiment of the present invention, the N-type barrier layer provided by the present invention is an N-type AlGaInP barrier layer, and the non-doped layer is a non-doped AlGaInP layer, wherein the method for manufacturing the non-doped layer comprises: after the growth of the N-type barrier layer is completed, lowering the growth temperature of the growth chamber to grow the non-doped layer. That is, after the N-type barrier layer is completed, firstly lowering the growth temperature of the growth chamber, and then introducing trimethylaluminum, trimethylgallium, trimethylindium and phosphine into the reaction chamber to grow a non-doped In-rich layer with a thickness of 20-80 angstroms, wherein the growth temperature when growing the non-doped layer is 580-660°C, including the end value. Lowering the growth temperature can make the surface of the N-type AlGaInP barrier layer evenly distributed with the In-rich layer, because In is easy to evaporate at high temperature, lowering the growth temperature can effectively increase the amount of In incorporated into the non-doped layer, so that it has a large positive mismatch with the substrate material, providing a powerful condition for the growth of the quantum dot layer.

[0081] In one embodiment of the present invention, the quantum dot layer provided by the present invention is a GaInP quantum dot layer, and the cap layer is an AlGaInP cap layer; wherein the AlGaInP cap layer may include a superimposed non-doped low-temperature AlGaInP sub-cap layer and a non-doped high-temperature AlGaInP sub-cap layer. After the non-doped layer is grown, the temperature of the reaction chamber is continuously lowered, and trimethylgallium, trimethylindium and phosphine are introduced to deposit the GaInP quantum dot layer; finally, the temperature of the reaction chamber is increased, trimethylaluminum, trimethylgallium, trimethylindium and phosphine are introduced into the reaction chamber, and a non-doped low-temperature AlGaInP sub-cap layer with a thickness of 60-120 angstroms (including the end value) is continuously deposited, and the temperature of the reaction chamber is continuously increased to grow a non-doped high-temperature (wherein the high temperature is the growth temperature when the non-doped low-temperature AlGaInP sub-cap layer is grown) AlGaInP sub-cap layer with a thickness of 200-1500 angstroms (including the end value).

[0082] Therefore, different quantum dot sizes can be obtained by adjusting the growth temperature and time, and the final quantum dot active layer related structure can be obtained by cyclic growth for 1-10 cycles.

[0083] like Figure 5c As shown, corresponding to step S3 , a P-type barrier layer 140 is grown on the side of the quantum dot active layer 130 away from the N-type confinement layer 110 .

[0084] In one embodiment of the present invention, the P-type barrier layer provided by the present invention can be a P-type AlGaInP barrier layer. After the quantum dot active layer is grown, the temperature of the reaction chamber is increased to the growth temperature of the barrier layer to grow a non-doped P-type AlGaInP barrier layer.

[0085] like Figure 5d As shown, corresponding to step S4 , a P-type confinement layer 150 is grown on the side of the P-type barrier layer 140 away from the N-type confinement layer 110 .

[0086] The epitaxial structure provided by the present invention may also include more optimized layers to improve the performance of the epitaxial structure. The epitaxial structure provided by the present invention also includes: a transition layer located on the side of the P-type restriction layer away from the N-type restriction layer. A window layer located on the side of the transition layer away from the N-type restriction layer. That is, after the growth of the P-type barrier layer is completed, a P-type restriction layer with a thickness of 2000-60000 angstroms (including the endpoint value) is grown on the P-type barrier layer. The P-type restriction layer can be a P-type AlInP restriction layer, the doping element can be Mg / Zn, and the doping concentration can be 1 to 5E18. Then, a transition layer with a thickness of 200-500 angstroms (including the endpoint value) is grown on the P-type restriction layer. The transition layer can be an AlGaInP transition layer, the doping element can be Mg / Zn, and the doping concentration can be 1 to 5E18. Finally, a window layer is grown on the transition layer. The window layer can be a GaP window layer, and the doping element can be Mg / Zn / C.

[0087] Correspondingly, an embodiment of the present invention further provides a light-emitting diode chip, wherein the light-emitting diode chip includes the epitaxial structure with a quantum dot layer provided by any one of the above embodiments.

[0088] The embodiment of the present invention provides an epitaxial structure with a quantum dot layer, a manufacturing method thereof, and a light-emitting diode chip, comprising: an N-type confinement layer; an N-type barrier layer located on one side of the N-type confinement layer; a quantum dot active layer located on the side of the N-type barrier layer away from the N-type confinement layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer, and a cap layer stacked in sequence, the non-doped layer is located on a side close to the N-type barrier layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer; a P-type barrier layer located on the side of the quantum dot active layer away from the N-type confinement layer; and a P-type confinement layer located on the side of the P-type barrier layer away from the N-type confinement layer.

[0089] From the above content, it can be seen that the technical solution provided by the embodiment of the present invention uses the quantum dot active layer as the active region. Since the quantum dot layer itself has a three-dimensional restriction effect on carriers, it can improve the luminous efficiency of the light-emitting diode chip and achieve a higher brightness even at a low current. In addition, the embodiment of the present invention uses the quantum dot active layer as the active region, and there is no need to increase the Al component in order to obtain a shorter luminous wavelength, thereby ensuring a high internal quantum efficiency of the light-emitting diode chip.

[0090] Furthermore, in the embodiment of the present invention, the In component of the undoped layer is made greater than the In component of the N-type barrier layer, so that there is a large positive mismatch between the undoped layer and the substrate material, which provides better conditions for the growth of the quantum dot layer, thereby improving the manufacturing quality of the light-emitting diode chip.

[0091] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An epitaxial structure having a quantum dot layer, characterized in that: include: N-type confinement layer; An N-type barrier layer located on one side of the N-type restriction layer; A quantum dot active layer located on a side of the N-type barrier layer away from the N-type confinement layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer and a cap layer stacked in sequence, the non-doped layer is located on a side close to the N-type barrier layer, and the quantum dot layer is located between the non-doped layer and the cap layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer, the N-type barrier layer is an N-type AlGaInP barrier layer, and the non-doped layer is a non-doped AlGaInP layer; A P-type barrier layer located on a side of the quantum dot active layer away from the N-type confinement layer; A P-type confinement layer is located on a side of the P-type barrier layer away from the N-type confinement layer.

2. The epitaxial structure with a quantum dot layer according to claim 1, characterized in that: The growth temperature of the non-doped layer is lower than the growth temperature of the N-type barrier layer.

3. The epitaxial structure with a quantum dot layer according to claim 1, characterized in that: The thickness of the non-doped layer ranges from 20 to 80 angstroms, inclusive.

4. The epitaxial structure with a quantum dot layer according to claim 1, characterized in that: The epitaxial structure further comprises: A current spreading layer located on a side of the N-type limiting layer away from the N-type blocking layer; An ohmic contact layer is located on a side of the current spreading layer away from the N-type barrier layer.

5. The epitaxial structure with a quantum dot layer according to claim 4, characterized in that: The epitaxial structure further comprises: An etching stop layer located on a side of the ohmic contact layer away from the N-type barrier layer; a buffer layer located on a side of the corrosion stop layer away from the N-type barrier layer; A temporary substrate is located on a side of the buffer layer away from the N-type barrier layer.

6. The epitaxial structure with a quantum dot layer according to claim 1, characterized in that: The epitaxial structure further comprises: A transition layer located on a side of the P-type restriction layer away from the N-type restriction layer; A window layer is located on a side of the transition layer away from the N-type confinement layer.

7. The epitaxial structure with a quantum dot layer according to claim 1, characterized in that: The In composition of the non-doped layer is also greater than the In composition of the N-type confinement layer.

8. A method for manufacturing an epitaxial structure having a quantum dot layer, characterized in that: For making the epitaxial structure with a quantum dot layer according to any one of claims 1 to 7, the making method comprises: Growing an N-type barrier layer on one side of the N-type confinement layer; A quantum dot active layer is grown on the side of the N-type barrier layer away from the N-type restriction layer, wherein the quantum dot active layer comprises a non-doped layer, the quantum dot layer and a cap layer stacked in sequence, the non-doped layer is located on the side close to the N-type barrier layer, and the In component of the non-doped layer is greater than the In component of the N-type barrier layer, the N-type barrier layer is an N-type AlGaInP barrier layer, and the non-doped layer is a non-doped AlGaInP layer; Growing a P-type barrier layer on the side of the quantum dot active layer away from the N-type confinement layer; A P-type confinement layer is grown on a side of the P-type barrier layer away from the N-type confinement layer.

9. The method for manufacturing an epitaxial structure having a quantum dot layer according to claim 8, characterized in that: The method for manufacturing the non-doped layer comprises: After the growth of the N-type barrier layer is completed, the growth temperature of the growth chamber is lowered to grow the non-doped layer.

10. A light emitting diode chip, characterized in that: The light-emitting diode chip comprises the epitaxial structure having a quantum dot layer as claimed in any one of claims 1 to 7.

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