Optical semiconductor device
By designing substrates, supports, and connecting components in the optical semiconductor device, the return path of high-frequency signals and the heat dissipation path of the laser section are ensured, solving the problem of excessive inductance affecting high-speed drive and achieving better high-speed performance and heat dissipation effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUMITOMO ELECTRIC INDUSTRIES LTD
- Filing Date
- 2021-09-15
- Publication Date
- 2026-05-12
AI Technical Summary
Existing optical semiconductor devices have relatively large inductance at high frequency bandwidths, which affects high-speed driving performance.
By employing a special design of the substrate, support members, and connecting components, the first connecting part and the second connecting part respectively ensure the return path of the high-frequency signal and the heat dissipation path of the laser part, thereby reducing inductance and improving heat dissipation.
It effectively reduces inductance, improves the return path and heat dissipation of high-frequency signals, and enhances the high-speed drive performance of the device.
Smart Images
Figure CN114268015B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to optical semiconductor devices. Background Technology
[0002] Patent Document 1 describes a photoelectric conversion semiconductor device. The photoelectric conversion semiconductor device includes: a semiconductor laser element with an optical modulator, which includes a semiconductor laser section and an optical modulator section; a high-frequency circuit, which includes a high-frequency circuit board and transmission lines; a terminating resistor; a capacitive matching circuit; and a plurality of metal lines.
[0003] Furthermore, Patent Document 1 describes a semiconductor laser device with a flip-chip optical modulator. This semiconductor laser device includes: a semiconductor laser element with a flip-chip optical modulator, comprising a semiconductor laser section and an optical modulator section; an open ferrule; a resistive element for terminating resistors; a through-hole; and electrodes. The electrodes include a signal input electrode to the optical modulator section, a ground electrode to the semiconductor laser element, and a laser input electrode for inputting drive current to the semiconductor laser section.
[0004] The semiconductor laser element with optical modulator is connected to the transmission line of the high-frequency circuit via a signal input electrode and solder. Additionally, the semiconductor laser element with optical modulator is connected to a via via a ground electrode, solder, and the transmission line of the high-frequency circuit. The via connects one end of a resistor via this transmission line.
[0005] Patent Document 1: Japanese Patent Application Publication No. 2001-209017
[0006] In the case of connection via the aforementioned metal wire, the cathode electrode that supplies current to the external circuit is positioned on the back side (opposite side of the anode electrode) of the anode electrode that supplies current to the external circuit. In the case of connection via metal wire, high-speed driving in frequency bands exceeding 50 GHz may be hindered by the inductance of the metal wire. Summary of the Invention
[0007] The object of the present invention is to provide an optical semiconductor device that can reduce inductance.
[0008] One type of optical semiconductor device includes: a substrate; a support member mounted on the substrate, having on its surface a first pattern for transmitting signals, a second pattern having a reference potential and forming a coplanar circuit with the first pattern, and a third pattern for supplying direct current; a modulator mounted on the support member, having a first electrode disposed on the back side and connected to the second pattern of the support member, and a second electrode disposed on the surface and connected to the first pattern of the support member; a laser unit mounted on the support member, having a third electrode disposed on the back side and connected to the second pattern of the support member, and a fourth electrode disposed on the surface and connected to the third pattern of the support member; a first connection portion, one end of which is connected to the second pattern of the support member, and the other end of which is connected to the first electrode; and a second connection portion, one end of which is connected to the surface of the substrate, and the other end of which is connected to the third electrode of the laser unit, wherein the modulator and the laser unit are mounted such that their respective surfaces face each other to the surface of the support member.
[0009] Another type of optical semiconductor device includes: a support having a first pattern for transmitting signals and a second pattern having a reference potential forming a coplanar line with the first pattern on its surface; a modulator having a first electrode disposed on its back side and connected to the second pattern of the support and a second electrode disposed on its surface and connected to the first pattern of the support; and a first connection portion having one end connected to the second pattern of the support and the other end connected to the first electrode of the modulator, wherein the surface of the modulator and the surface of the support are opposite to each other.
[0010] The effects of the invention
[0011] According to the present invention, the inductance can be reduced. Attached Figure Description
[0012] Figure 1 This is a perspective view showing the support member, modulator, and first connection portion of the optical semiconductor device according to the embodiment.
[0013] Figure 2 It is a schematic representation Figure 1 A cross-sectional view of the support, modulator, and first connecting part.
[0014] Figure 3 It means Figure 1 A perspective view of the substrate, support, and integrated semiconductor laser device of an optical semiconductor device.
[0015] Figure 4 It means Figure 3 A perspective view of the modulator and laser section of an integrated semiconductor laser device.
[0016] Figure 5 It means Figure 1A perspective view of the substrate, support, integrated semiconductor laser device, first connection part, and second connection part of the optical semiconductor device.
[0017] Figure 6 It means Figure 5 A perspective view of the first connecting part.
[0018] Figure 7 It means Figure 5 A perspective view of the second connecting part.
[0019] Figure 8 This is a perspective view showing the first and second connecting parts involved in the modified example. Detailed Implementation
[0020] [Description of Embodiments of the Invention]
[0021] First, embodiments of the present invention will be described. One embodiment of the optical semiconductor device m includes: a substrate; a support member mounted on the substrate, having on its surface a first pattern for transmitting signals, a second pattern having a reference potential forming a coplanar circuit with the first pattern, and a third pattern for supplying direct current; a modulator mounted on the support member, having a first electrode disposed on the back side and connected to the second pattern of the support member, and a second electrode disposed on the surface and connected to the first pattern of the support member; a laser unit mounted on the support member, having a third electrode disposed on the back side and connected to the second pattern of the support member, and a fourth electrode disposed on the surface and connected to the third pattern of the support member; a first connecting portion, one end of which is connected to the second pattern of the support member, and the other end of which is connected to the first electrode; and a second connecting portion, one end of which is connected to the surface of the substrate, and the other end of which is connected to the third electrode of the laser unit, wherein the modulator and the laser unit are mounted such that their respective surfaces face each other to the surface of the support member.
[0022] This optical semiconductor device includes a substrate, a support member, and an integrated semiconductor laser. The integrated semiconductor laser includes a modulator and a laser section. The integrated semiconductor laser is mounted on the support member with the surfaces of the modulator and laser section facing the surface of the support member. The support member has a first pattern, a second pattern, and a third pattern on its surface, and the modulator has a second electrode on its surface. The laser section has a fourth electrode on its surface. The fourth electrode is connected to the third pattern of the support member, and the second electrode is connected to the first pattern of the support member. The optical semiconductor device also includes a first connection portion and a second connection portion. The first connection portion connects the first electrode formed on the back side of the modulator to the second pattern formed on the surface of the support member. Therefore, when a cathode electrode is formed on the back side of the modulator as the first electrode, a return path for high-frequency signals powered from the line can be ensured, and the inductance reaching the ground side can be reduced. Furthermore, the second connection portion connects the third electrode formed on the back side of the laser section to the surface of the substrate. Therefore, the laser unit is connected to the surface of the substrate via the second connecting part, which ensures a heat dissipation path from the laser unit to the substrate, thereby improving heat dissipation.
[0023] The modulator and laser unit can be an integrated semiconductor laser with a modulator, or the modulator and laser unit can be separate components. Even when the modulator and laser unit are separate components, the first and second connection portions of the optical semiconductor device ensure various effects such as securing the return path and ensuring the heat dissipation path. Furthermore, in a semiconductor laser with a modulator that integrates both the modulator and laser unit, the return path and heat dissipation path are easily affected by the integration; therefore, the effects obtained by providing the first and second connection portions of the optical semiconductor device can be further improved.
[0024] One end of the first connecting portion may have a first surface, and the other end of the first connecting portion may have a second surface. One end of the second connecting portion may have a third surface, and the other end of the second connecting portion may have a fourth surface. In this case, one end of the first connecting portion can contact the second patterned surface, and the other end of the first connecting portion can contact the first electrode surface of the modulator. Furthermore, one end of the second connecting portion can contact the surface of the substrate, and the other end of the second connecting portion can contact the third electrode surface of the laser portion. Therefore, the effect of ensuring the return path of high-frequency signals and the effect of ensuring the heat dissipation path can be further improved.
[0025] The second connecting portion may also have a fifth surface intersecting the third surface of the second connecting portion, the third surface of the second connecting portion being connected to the surface of the substrate, and the fifth surface of the second connecting portion being arranged along the side of the support member. In this case, one side of the second connecting portion, namely the fifth surface, can be arranged along the support member.
[0026] The substrate can be made of metal or an insulator. In this case, a metal substrate or an insulating substrate can be used.
[0027] The support can be made of an insulator.
[0028] The first connection part can be made of metal or an insulator. In this case, a first connection part made of metal or an insulator can be used.
[0029] The second connection can be made of metal or an insulator. In this case, a second connection made of metal or an insulator can be used.
[0030] At least one of the first and second connecting portions may be made of an insulator, and a metal pattern may be formed on the surface of the insulator. In this case, a metal pattern can be formed on the contact surface between the first and second connecting portions and the integrated semiconductor laser.
[0031] The first connecting part and the second connecting part can be integrated as one unit. In this case, the first connecting part and the second connecting part are a single component. This prevents an increase in the number of components and makes it easy to operate the first connecting part and the second connecting part.
[0032] Another type of optical semiconductor device includes: a support having a first pattern for transmitting signals and a second pattern having a reference potential forming a coplanar line with the first pattern on its surface; a modulator having a first electrode disposed on its back side and connected to the second pattern of the support and a second electrode disposed on its surface and connected to the first pattern of the support; and a first connection portion having one end connected to the second pattern of the support and the other end connected to the first electrode of the modulator, wherein the surface of the modulator and the surface of the support are opposite to each other.
[0033] This opto-semiconductor device includes a support and a modulator. The modulator is mounted on the support with its surface facing the surface of the support. The support has a first pattern and a second pattern on its surface, and a second electrode is formed on the surface of the modulator. The second electrode is connected to the first pattern of the support. Furthermore, the opto-semiconductor device has a first connection portion that connects the first electrode formed on the back side of the modulator to the second pattern formed on the surface of the support. Therefore, when a cathode electrode is formed on the back side of the modulator as the first electrode, a return path for high-frequency signals powered from the line can be ensured. This reduces the inductance reaching the ground side.
[0034] The thermal conductivity of the substrate can be higher than that of the support.
[0035] [Detailed Description of Embodiments of the Invention]
[0036] Hereinafter, specific examples of the optical semiconductor device according to the embodiments will be described with reference to the accompanying drawings. Furthermore, the present invention is not limited to the examples described below, but is shown in the claims and includes all modifications within the scope equivalent to the claims. In the description of the drawings, the same or equivalent elements are labeled with the same reference numerals, and repeated descriptions are omitted where appropriate. Additionally, for the purposes of the drawings, some parts are sometimes simplified or exaggerated in description for ease of understanding, and the size ratios, etc., are not limited to the size ratios shown in the drawings.
[0037] Figure 1 This is a perspective view of the support member 10, the integrated semiconductor laser 20, and the first connecting portion 30 of the exemplary optical semiconductor device 1 according to the embodiment. Figure 2 This is a schematic side view of the support member 10, the integrated semiconductor laser 20, and the first connecting part 30. Figure 3 This is a perspective view showing the substrate 2, support member 10, and integrated semiconductor laser 20 of the optical semiconductor device 1.
[0038] The integrated semiconductor laser 20 is, for example, an electro-absorption modulator laser (EML) laser-diode that includes an electro-absorption modulator (EA). As an example, the integrated semiconductor laser 20 is shaped like a plate having a thickness in the third direction D3.
[0039] like Figure 1 , Figure 2 and Figure 3 As shown, in the optical semiconductor device 1, a substrate 2, a support member 10, and an integrated semiconductor laser 20 are stacked sequentially. The substrate 2 is made of, for example, copper tungsten (CuW). The substrate 2 serves as the base for the support member 10 and the integrated semiconductor laser 20. Alternatively, the material of the substrate 2 can be any material other than copper tungsten, such as copper molybdenum (CuMo), aluminum nitride (AlN), aluminum silicon carbide (Al-SiC), and magnesium silicon carbide (Mg-SiC).
[0040] For example, the support member 10 is made of an insulator. As an example, the material of the support member 10 can be aluminum nitride (AlN). AlN is a heat-dissipating material with high heat dissipation properties, and is therefore suitable for heat dissipation via the support member 10. However, AlN has a high dielectric constant, so an AlN-based support member 10 is also unsuitable for high-frequency transmission. Alternatively, the support member 10 can be aluminum oxide (AlO), which has lower heat dissipation properties than AlN.
[0041] The substrate 2 has a surface 2b for mounting the support member 10, and the support member 10 has a surface 10b for mounting the integrated semiconductor laser 20. For example, the surface 10b extends in the longitudinal direction (first direction D1) and the width direction (second direction D2) of the integrated semiconductor laser 20, and has a thickness in the third direction D3. The support member 10 has, for example, a side surface 10c extending in the first direction D1 and the third direction D3, and a side surface 10d extending in the second direction D2 and the third direction D3.
[0042] The support member 10 has a first pattern 11 for transmitting signals, a second pattern 12 with a reference potential forming a coplanar circuit with the first pattern 11, and a third pattern 13 for supplying direct current on its surface 10b. Furthermore, the integrated semiconductor laser 20 is a semiconductor laser with a modulator, including a modulator 21 and a laser section 22. The modulator 21 has a surface 21b opposite to the support member 10 and a back surface 21c facing the opposite side of the support member 10. The modulator 21 and the laser section 22 can be an integrated semiconductor laser 20 with a modulator, or they can be separate components.
[0043] Like the modulator 21, the laser unit 22 has a surface 22b opposite to the support member 10 and a back surface 22c facing the opposite side of the support member 10. The integrated semiconductor laser 20 also has a side surface 20d extending in the first direction D1 and the third direction D3, and a side surface 20f extending in the second direction D2 and the third direction D3. The first connecting portion 30 and the second connecting portion 40 are each opposite to the side surface 20d.
[0044] The optical semiconductor device 1 also has a first connection portion 30 connected to the surface 10b of the support member 10 and the back surface 21c of the modulator 21, and a second connection portion 40 connected to the surface 2b of the substrate 2 and the back surface 22c of the laser portion 22. One end of the first connection portion 30 is connected to the second pattern 12 of the support member 10, and the other end of the first connection portion 30 is connected to the first electrode 23 of the first conductivity type of the modulator 21.
[0045] For example, the second pattern 12 is a GND pattern, and the first electrode 23 is the cathode electrode of the modulator 21. The first pattern 11 is disposed on the surface 10b of the support 10 and connected to the second electrode 24 of the modulator 21. For example, the first pattern 11 is a pattern electrode for signal transmission, and the second electrode 24 is the anode electrode of the modulator 21.
[0046] Figure 4 It is Figure 3 An enlarged oblique view of the integrated semiconductor laser 20. (See image.) Figure 4As shown, the first pattern 11, connected to the anode electrode of the modulator 21, transmits a high-frequency signal. For example, an absorption current flows through the second electrode 24, which serves as the anode electrode. The first pattern 11 is bent, for example, extending from the relative position of the support member 10 and the integrated semiconductor laser 20 toward one side in the second direction D2 and along the first direction D1.
[0047] A post 10f protruding from surface 10b is sandwiched between surface 10b of support member 10 and surface 21b of modulator 21. Post 10f electrically connects the first pattern 11 of support member 10 and the anode electrode of modulator 21. Additionally, support member 10 may have, for example, multiple posts 10g (not shown). These multiple posts 10g electrically connect the anode electrode of laser section 22 and the pattern of support member 10. Furthermore, since integrated semiconductor laser 20 is flip-chip mounted on support member 10, the multiple posts 10h are provided for stable flip-chip mounting.
[0048] The first pattern 11 has a first extension 11b extending in the first direction D1 and a second extension 11c bending from the first extension 11b toward the integrated semiconductor laser 20. The first pattern 11 is made of gold (Au), for example. The second pattern 12 is, for example, a line GND provided on the surface 10b of the support member 10.
[0049] The laser unit 22 of the integrated semiconductor laser 20 is, for example, a heat source. The laser unit 22 has a third electrode 25 of a first conductivity type disposed on the back surface 22c, and a fourth electrode 26 of a second conductivity type disposed on the surface 22b and connected to a third pattern 13 of the support member 10. The third pattern 13 supplies direct current (LD current) to the laser unit 22. The third electrode 25, for example, together with the aforementioned first electrode 23, constitutes the common cathode on the back surface of the integrated semiconductor laser 20.
[0050] Figure 5 This is a perspective view showing the first connecting portion 30 that connects the support member 10 and the integrated semiconductor laser 20 to each other, and the second connecting portion 40 that connects the substrate 2 and the integrated semiconductor laser 20 to each other. Figure 5 As shown, the first connecting portion 30, viewed along the first direction D1, is L-shaped, and an integrated semiconductor laser 20 (modulator 21) is disposed on the inner part of the L. The second connecting portion 40 is also L-shaped, similar to the first connecting portion 30, and an integrated semiconductor laser 20 (laser portion 22) is disposed on the inner part of the L.
[0051] like Figure 2 and Figure 5As shown, the first connecting portion 30 has a first surface 31 at one end connected to the second pattern 12 of the support member 10, and a second surface 32 at the other end connected to the first electrode 23 of the modulator 21. That is, the first connecting portion 30 is connected to the line GND (second pattern 12) from the anode electrode (second electrode 24) of the modulator 21 via the first connecting portion 30 (second surface 32 and first surface 31).
[0052] The first connection portion 30 forms a high-frequency return path X. The inductance of the first connection portion 30 is less than the inductance of the second connection portion 40. The second connection portion 40 connects to the substrate 2 (surface 2b) from the anode electrode (fourth electrode 26) of the laser portion 22 via the second connection portion 40 (fourth surface 42 and third surface 41). The second connection portion 40 forms a heat dissipation path Y extending from the laser portion 22 to the substrate 2. For example, the thermal resistance of the second connection portion 40 is less than the thermal resistance of the first connection portion 30.
[0053] Figure 6 This is a perspective view showing the first connecting part 30. (Example) Figure 5 and Figure 6 As shown, the first connecting portion 30 has a first surface 31 connected to the support member 10, a second surface 32 connected to the modulator 21, an inner surface 33 extending between the first surface 31 and the second surface 32, and an outer surface 34 that is L-shaped and arranged along the first direction D1.
[0054] For example, the first surface 31, the second surface 32, the inner surface 33, and the outer surface 34 are each flat. The first surface 31, the second surface 32, and the inner surface 33 are, for example, rectangular in shape. The inner surface 33 of the first connecting portion 30 is, for example, separate from the modulator 21. For example, the area of the second surface 32 is larger than the area of the first surface 31. As a result, the contact area with the back surface 21c of the modulator 21 can be ensured to be large, thereby reducing the inductance reaching the GND side (hereinafter sometimes referred to as Lgnd).
[0055] Figure 7 This is a perspective view showing the second connecting part 40. (Example) Figure 5 and Figure 7 As shown, the second connecting portion 40 includes a third surface 41 connected to the surface 2b of the substrate 2, a fourth surface 42 connected to the laser portion 22, and a fifth surface 43 extending from one end of the third surface 41 in the second direction D2 in the third direction D3 and the first direction D1. For example, the third surface 41 is a base connecting portion connected to the substrate 2, which serves as a base. The fourth surface 42 is, for example, a connecting portion connected to the laser portion 22 (back surface 22c) of the integrated semiconductor laser 20.
[0056] Furthermore, the second connecting portion 40 is L-shaped and has an outer pair of side surfaces 44 arranged along the first direction D1, and a protrusion 45 protruding inwards from the L. The protrusion 45 has a support member opposing surface 45b extending in the first direction D1 and the second direction D2, and a laser opposing surface 45c extending in the first direction D1 and the third direction D3. The support member opposing surface 45b is, for example, the portion that connects to the second pattern 12 of the support member 10.
[0057] The third surface 41, the fourth surface 42, the fifth surface 43, the outer surface 44, the supporting member opposing surface 45b, and the laser opposing surface 45c are each, for example, flat. The third surface 41, the fourth surface 42, the fifth surface 43, the supporting member opposing surface 45b, and the laser opposing surface 45c are, for example, rectangular. The fifth surface 43 of the second connecting portion 40 extends, for example, along the side surface 10c of the supporting member 10. For example, the area of the fourth surface 42 is larger than the area of the third surface 41. The fifth surface 43, for example, forms a wall portion that abuts against the supporting member 10.
[0058] Therefore, a large contact area with the back surface 22c of the laser section 22 can be ensured, thereby improving heat dissipation from the laser section 22. The second connecting portion 40 may have fins to improve heat dissipation. The second connecting portion 40 dissipates heat from the laser section 22 to the substrate 2 along a heat dissipation path Y extending from the laser section 22 across the support member 10 to the substrate 2.
[0059] Therefore, the necessity of considering the heat dissipation of the support member 10 can be reduced, thus increasing the degree of freedom in the material of the support member 10. As a result, a support member 10 suitable for high frequencies can be designed without considering heat dissipation, thus enabling good high-frequency characteristics to be achieved through the support member 10.
[0060] At least one of the fifth surface 43 of the second connecting portion 40 and the opposite surface 45b of the support member can contact the support member 10. For example, when the opposite surface 45b of the support member contacts the surface 10b of the support member 10, the alignment of the second connecting portion 40 with the support member 10 and the integrated semiconductor laser 20 can be easily performed.
[0061] For example, at least one of the first connecting portion 30 and the second connecting portion 40 may be made of metal. For example, if the second connecting portion 40 is made of metal, metal has higher heat dissipation properties than an insulator, thereby improving the heat dissipation from the laser portion 22 via the second connecting portion 40 to the substrate 2.
[0062] When at least one of the first connecting portion 30 and the second connecting portion 40 is made of metal, the material of the first connecting portion 30 and the second connecting portion 40 is, for example, copper-tungsten (CuW), copper-molybdenum (CuMo), gold (Au), silver (Ag), copper (Cu), aluminum (Al), platinum (Pt) or an alloy containing at least one of them.
[0063] However, the materials of the first connecting portion 30 and the second connecting portion 40 may also be materials other than metals. For example, at least either the first connecting portion 30 or the second connecting portion 40 may be made of an insulator. The materials of the first connecting portion 30 and the second connecting portion 40 may be, for example, aluminum nitride (AlN) or synthetic diamond crystal.
[0064] When the first connecting portion 30 or the second connecting portion 40 is made of an insulator, a metallic pattern is formed on the surfaces of the first connecting portion 30 that contact the modulator 21 or the support member 10 (e.g., the first surface 31 and the second surface 32) and the surfaces of the second connecting portion 40 that contact the laser unit 22, the support member 10, or the substrate 2 (e.g., the third surface 41, the fourth surface 42, and the support member opposing surface 45b). As described above, when the first connecting portion 30 or the second connecting portion 40 is made of an insulator, the high-frequency characteristics can be improved, and a high-frequency return path can also be obtained in the laser unit 22.
[0065] The materials of the first connecting part 30 and the second connecting part 40 can be the same or different from each other. For example, the first connecting part 30 can be made of an insulator and the second connecting part 40 can be made of metal. In this case, the first connecting part 30 can achieve the effect of a high-frequency return path, and the heat dissipation of the heat source, i.e., the laser part 22, can be performed more effectively in the second connecting part 40.
[0066] Next, the effects of the optical semiconductor device 1 according to the embodiment will be explained. The optical semiconductor device 1 includes a substrate 2, a support member 10, and an integrated semiconductor laser 20. The integrated semiconductor laser 20 includes a modulator 21 and a laser section 22. The integrated semiconductor laser 20 is mounted on the support member 10 such that the surfaces 21b and 22b of the modulator 21 and the laser section 22 face the surface 10b of the support member 10. The support member 10 has a first pattern 11, a second pattern 12, and a third pattern 13 on its surface 10b, and the modulator 21 has a second electrode 24 on its surface 21b. Additionally, the laser section 22 has a fourth electrode 26 on its surface 22b. The fourth electrode 26 is connected to the third pattern 13 of the support member 10, and the second electrode 24 is connected to the first pattern 11 of the support member 10.
[0067] Furthermore, the optical semiconductor device 1 has a first connection portion 30 and a second connection portion 40. The first connection portion 30 connects the first electrode 23 formed on the back surface 21c of the modulator 21 and the second pattern 12 formed on the surface 10b of the support member 10. Therefore, when a cathode electrode is formed on the back surface 21c of the modulator 21 as the first electrode 23, the return path of the high-frequency signal powered from the line (first pattern 11) can be ensured, and the inductance reaching the GND side can be reduced.
[0068] Furthermore, the second connection portion 40 connects the third electrode 25 formed on the back surface 22c of the laser portion 22 to the surface 2b of the substrate 2. Thus, the laser portion 22 is connected to the surface 2b of the substrate 2 via the second connection portion 40, ensuring a heat dissipation path Y from the laser portion 22 to the substrate 2, thereby improving heat dissipation.
[0069] One end of the first connecting portion 30 may have a first surface 31, and the other end of the first connecting portion 30 may have a second surface 32. One end of the second connecting portion 40 may have a third surface 41, and the other end of the second connecting portion 40 may have a fourth surface 42. This allows one end of the first connecting portion 30 to contact the surface of the second pattern 12, and the other end of the first connecting portion 30 to contact the surface of the first electrode 23 of the modulator 21. Furthermore, one end of the second connecting portion 40 can contact the surface 2b of the substrate 2, and the other end of the second connecting portion 40 can contact the surface of the third electrode 25 of the laser portion 22. Therefore, the effect of the high-frequency return path X and the effect of ensuring the heat dissipation path Y can be further improved.
[0070] Furthermore, the modulator 21 and the laser unit 22 can be an integrated semiconductor laser 20 with a modulator, or they can be separate components. Even when the modulator 21 and the laser unit 22 are separate components, the first connection portion 30 and the second connection portion 40 of the optical semiconductor device 1 can still ensure the return path and heat dissipation path, respectively. Moreover, in a semiconductor laser 20 with a modulator integrating the modulator 21 and the laser unit 22, integration makes the return path and heat dissipation path more susceptible to influence; therefore, the effects obtained by providing the first connection portion 30 and the second connection portion 40 of the optical semiconductor device 1 can be further improved.
[0071] The second connecting portion 40 also has a fifth surface 43 that intersects with the third surface 41 of the second connecting portion 40. The third surface 41 of the second connecting portion 40 is connected to the surface 2b of the substrate 2, and the fifth surface 43 of the second connecting portion 40 is arranged along the side surface 10c of the support member 10. Thus, one side surface of the second connecting portion 40, namely the fifth surface 43, can be arranged along the support member 10.
[0072] The substrate 2 can be made of metal or an insulator. In this case, a metal substrate 2 or an insulating substrate 2 can be used.
[0073] The support member 10 may be made of an insulator.
[0074] The first connecting part 30 can be made of metal or an insulator. In this case, a first connecting part 30 made of metal or a first connecting part 30 made of insulation can be used.
[0075] The second connecting part 40 can be made of metal or an insulator. In this case, a second connecting part 40 made of metal or an insulator can be used.
[0076] At least one of the first connecting portion 30 and the second connecting portion 40 may be made of an insulator, and a metal pattern may be formed on the surface of the insulator. In this case, a metal pattern can be formed on the contact surface of at least one of the first connecting portion 30 and the second connecting portion 40 with the integrated semiconductor laser 20, the support member 10, or the substrate 2. Furthermore, the thermal conductivity of the substrate 2 may be higher than that of the support member 10.
[0077] Next, refer to Figure 8 The connecting portion 50, which has a first connecting portion and a second connecting portion, as described in the modified example, will be explained. The connecting portion 50 has a first connecting portion 60 with the same shape as the first connecting portion 30 described above, and a second connecting portion 70 with the same shape as the second connecting portion 40. The first connecting portion 60, like the first connecting portion 30, has a first surface 31, a second surface 32, an inner surface 33, and an outer surface 34. The second connecting portion 70, like the second connecting portion 40, has a third surface 41, a fourth surface 42, a fifth surface 43, an outer surface 44, and a protrusion 45.
[0078] In the modified example of the optical semiconductor device described above, the first connection portion 60 and the second connection portion 70 are integrated. That is, the first connection portion 60 and the second connection portion 70 are a single component. As a result, the increase in the number of components can be suppressed, and the operation of the first connection portion 60 and the second connection portion 70 can be easily performed.
[0079] The embodiments and variations of the optical semiconductor device according to the present invention have been described above. However, the present invention is not limited to the foregoing embodiments. That is, various modifications and alterations can be made to the present invention without changing the spirit of the claims, which will be readily apparent to those skilled in the art. For example, the shape, size, quantity, material, and arrangement of the components of the optical semiconductor device are not limited to the foregoing content and can be appropriately modified.
[0080] For example, in the aforementioned embodiment, an example of an integrated semiconductor laser 20 having a substrate 2, a laser section 22, and a second connection section 40 was described. However, it is also possible for the optical semiconductor device to omit at least one of the substrate 2, the laser section 22, and the second connection section 40. That is, it could be an optical semiconductor device having only a support member 10, a modulator 21, and a first connection section 30. In this case, even with a cathode electrode formed on the back surface 21c of the modulator 21, a high-frequency return path X from the line power supply can be ensured. Therefore, the inductance reaching the GND side can be reduced.
[0081] Explanation of the label
[0082] 1… Optical semiconductor device
[0083] 2...Substrate
[0084] 2b…Surface
[0085] 10… Support components
[0086] 10b…Surface
[0087] 10c, 10d... Side view
[0088] 10f…column
[0089] 11… Pattern 1
[0090] 11b…First Extension
[0091] 11c…Second Extension
[0092] 12… Pattern 2
[0093] 13…3rd Pattern
[0094] 20… Integrated semiconductor lasers (semiconductor lasers with modulators)
[0095] 20d, 20f... Side view
[0096] 21… modulator
[0097] 21b…Surface
[0098] 21c…back
[0099] 22…Laser Department
[0100] 22b…Surface
[0101] 22c…back
[0102] 23…Electrode 1
[0103] 24…Electrode 2
[0104] 25…3rd electrode
[0105] 26…4th electrode
[0106] 30, 60… First connecting part
[0107] 31…Page 1
[0108] 32… Page 2
[0109] 33…inner side
[0110] 34…outer side
[0111] 40, 70… Second connecting part
[0112] 41… Page 3
[0113] 42… Page 4
[0114] 43… Page 5
[0115] 44…outer side
[0116] 45…convex part
[0117] 45b…Supporting member opposite surface
[0118] 45c…Laser opposite face
[0119] 50…Connecting part
[0120] D1…Direction 1
[0121] D2…Direction 2
[0122] D3…3rd direction
Claims
1. An optical semiconductor device, comprising: substrate; A support member, mounted on the substrate, has a first pattern for transmitting signals, a second pattern having a reference potential that forms a coplanar circuit with the first pattern, and a third pattern for supplying direct current. A modulator mounted on the support has a first electrode disposed on the back side and connected to the second pattern of the support, and a second electrode disposed on the surface and connected to the first pattern of the support. A laser unit, mounted on the support member, has a third electrode disposed on the back side and connected to the second pattern of the support member, and a fourth electrode disposed on the surface and connected to the third pattern of the support member. A first connecting portion, one end of which is connected to the second pattern of the support member, and the other end of which is connected to the first electrode; and The second connecting portion has one end connected to the surface of the substrate and the other end connected to the third electrode of the laser portion. The modulator and the laser unit are mounted with their respective surfaces facing each other to the surface of the support member. One end of the first connecting portion has a first surface, and the other end of the first connecting portion has a second surface. One end of the second connecting portion has a third surface, and the other end of the second connecting portion has a fourth surface. The second connecting portion also has a fifth surface that intersects with the third surface of the second connecting portion. The third surface of the second connecting portion is connected to the surface of the substrate. The fifth surface of the second connecting portion is arranged along the side of the support member.
2. The optical semiconductor device according to claim 1, wherein, The modulator and the laser unit are integrated to form a semiconductor laser with a modulator.
3. The optical semiconductor device according to claim 1 or 2, wherein, The substrate is made of metal or an insulator.
4. The optical semiconductor device according to claim 1 or 2, wherein, The support is made of an insulator.
5. The optical semiconductor device according to claim 1 or 2, wherein, The first connecting part is made of metal or an insulator.
6. The optical semiconductor device according to claim 1 or 2, wherein, The second connection part is made of metal or an insulator.
7. The optical semiconductor device according to claim 5, wherein, At least one of the first connecting portion and the second connecting portion is made of an insulator. A metallic pattern is formed on the surface of the insulator.
8. The optical semiconductor device according to claim 6, wherein, At least one of the first connecting portion and the second connecting portion is made of an insulator. A metallic pattern is formed on the surface of the insulator.
9. The optical semiconductor device according to claim 1 or 2, wherein, The first connecting part and the second connecting part are integrated.
10. The optical semiconductor device according to claim 1, wherein, The thermal conductivity of the substrate is higher than that of the support member.
11. The optical semiconductor device according to claim 1 or 2, wherein, The first connecting part and the second connecting part are each L-shaped.