A preparation method of a sensor based on co-doped SiC nanomaterials

Abstract

The present invention discloses a preparation method of a sensor based on co-doped SiC nanomaterials. By co-doping boron and aluminum into silicon carbide, the light response range of silicon carbide can be extended from the ultraviolet light region to the visible light region, and at the same time, the concentration of photo-generated carriers of silicon carbide under light illumination is increased, thereby further optimizing its light response ability and improving the sensitivity of visual sensing. In addition, by doping nitrogen into boron-aluminum co-doped silicon carbide, the structural asymmetry of silicon carbide can be increased, thereby enhancing its piezoelectric coefficient and increasing its piezoelectric response ability, and further improving the sensitivity of tactile sensing. Based on the anodic electrochemical etching treatment of boron-aluminum-nitrogen co-doped silicon carbide, one-dimensional silicon carbide nanostructures with different morphologies can be obtained, enabling the integrated sensor to be applied in a wider range of environments. In short, the present invention provides a preparation method of a sensor based on co-doped SiC nanomaterials with a simple operation process and strong practicability.

Description

Technical Field

[0001] The present invention relates to the technical field of sensors, and particularly to a preparation method of a sensor based on co-doped SiC nanomaterials. Background Art

[0002] With the rapid development of the information age, obtaining more extensive and complex information to establish a large database has become the cornerstone of technological development. In daily life, humans obtain external information mainly relying on their own sensory organs, including touch, vision, etc. In activities such as social production and scientific research, the human sensory system obviously cannot meet the needs of information acquisition. Therefore, seeking sensors that can convert environmental information into electrical signals for humans to collect has become an urgent problem to be solved.

[0003] In existing research, most sensors still have a series of problems that cannot be ignored: (1) Most sensors can only serve as single sensors for vision or touch; (2) When two types of sensing are combined, the sensor system becomes more complex and larger in volume due to the installation of different sensors; (3) When sensors for different sensing are combined together, the matching difficulty increases.

[0004] In the research process of sensors, it is found that silicon carbide, as the third-generation wide-bandgap semiconductor, has stable chemical properties, high mechanical strength, stable chemical performance, high thermal conductivity, small thermal expansion coefficient, and good wear resistance, and has been widely used in fields such as supercapacitors and field emission cathode materials. In addition, silicon carbide also exhibits excellent optoelectronic response ability and significant piezoelectric effect, and is an excellent material for assembling tactile and visual integrated sensors.

[0005] Based on the above properties of silicon carbide, the present invention first proposes a co-doped one-dimensional SiC nanostructure, and uses its optoelectronic and piezoelectric response abilities to construct a tactile and visual integrated sensor, and solves the above series of problems existing in the sensors of the prior art. Summary of the Invention

[0006] In view of the deficiencies of the above prior art, the present invention provides a preparation method of a sensor based on co-doped SiC nanomaterials, which has a simple operation process and strong practicability.

[0007] To solve the above technical problems, the present invention adopts the following technical solutions:

[0008] A preparation method of a sensor based on co-doped SiC nanomaterials, comprising:

[0009] Co-doping a silicon carbide single crystal wafer with a boron source, an aluminum source, and a nitrogen source in sequence to obtain boron-aluminum-nitrogen co-doped silicon carbide;

[0010] The anodic electrochemical etching treatment is carried out on the boron-aluminum-nitrogen co-doped silicon carbide to obtain a silicon carbide nanostructure array film, and the silicon carbide nanostructure array film is detached from the silicon carbide single crystal wafer; wherein, the silicon carbide nanostructure array film includes a substrate and silicon carbide nanostructures attached to the substrate;

[0011] A layer of PDMS film is provided on the side of the substrate having silicon carbide nanostructures, and the first end of the silicon carbide nanostructures is exposed from the PDMS film, thus completing the preparation of the electrode mask template;

[0012] Deposit a first electrode array layer on the side of the electrode mask template that exposes the first end of the silicon carbide nanostructures;

[0013] Detach the substrate from the electrode mask template, and then expose the second end of the silicon carbide nanostructures on the surface of the PDMS film;

[0014] Deposit a second electrode array layer on the side of the electrode mask template that exposes the second end of the silicon carbide nanostructures, thus completing the preparation of the sensor.

[0015] Further, the co-doping of the silicon carbide single crystal wafer with a boron source, an aluminum source, and a nitrogen source includes:

[0016] At 800 - 1200 °C, using B2O3 as the boron source, under an argon atmosphere protection at a pressure of 10 - 500 Pa, perform boron doping on the silicon carbide single crystal wafer for 1 - 10 hours to obtain boron-doped silicon carbide;

[0017] At 1000 - 1500 °C, using Al2O3 as the aluminum source, under an argon atmosphere protection at a pressure of 1 - 50 Pa, perform aluminum doping on the boron-doped silicon carbide for 1 - 10 hours to obtain boron-aluminum co-doped silicon carbide;

[0018] At 900 - 1400 °C, using N2O5 as the nitrogen source, under an argon atmosphere protection at a pressure of 10 - 300 Pa, perform nitrogen doping on the boron-aluminum co-doped silicon carbide for 1 - 10 hours to obtain the boron-aluminum-nitrogen co-doped silicon carbide.

[0019] Further, the boron doping concentration in the boron-aluminum-nitrogen co-doped silicon carbide is 0.01–1 mol%, the aluminum doping concentration is 0.01 - 0.5 mol%, the nitrogen doping concentration is 0.01 - 1 mol%, and the silicon carbide concentration is 0.01 - 1 mol%

[0020] Further, the resistance of the silicon carbide single crystal wafer is greater than 10 7 Ω·cm, and the crystal form of the silicon carbide single crystal wafer is at least one of 3C, 4H, and 6H.

[0021] Further, the anodic electrochemical etching treatment of the boron-aluminum-nitrogen co-doped silicon carbide to form a silicon carbide nanostructure array film on the silicon carbide single crystal wafer includes:

[0022] Mix hydrofluoric acid, ethanol, and hydrogen peroxide to prepare an etching solution;

[0023] Use the boron-aluminum-nitrogen co-doped silicon carbide as the anode and a graphite sheet as the cathode, apply a voltage of 1 - 150 V, with a pulse waveform of sine wave or square wave, and an electrochemical reaction time of 1 - 100 minutes to form the silicon carbide nanostructure array film on the silicon carbide single crystal wafer.

[0024] Further, the silicon carbide nanostructure array film includes at least one of a silicon carbide smooth nanowire array, a silicon carbide nanobelt array, and a silicon carbide bamboo-shaped nanowire array;

[0025] Among them, the anodic electrochemical etching treatment of the boron-aluminum-nitrogen co-doped silicon carbide includes:

[0026] Under the conditions of a voltage of 1 - 50 V, a pulse waveform of sine wave, and an electrochemical reaction time of 1 - 30 minutes, perform anodic electrochemical etching treatment on the boron-aluminum-nitrogen co-doped silicon carbide to form the silicon carbide smooth nanowire array on the silicon carbide single crystal wafer;

[0027] Under the conditions of a voltage of 1 - 100 V, a pulse waveform of square wave, and an electrochemical reaction time of 1 - 50 minutes, perform anodic electrochemical etching treatment on the boron-aluminum-nitrogen co-doped silicon carbide to form the silicon carbide nanobelt array on the silicon carbide single crystal wafer;

[0028] Under the conditions of a voltage of 30 - 150 V, a pulse waveform of sine wave, and an electrochemical reaction time of 30 - 100 minutes, perform anodic electrochemical etching treatment on the boron-aluminum-nitrogen co-doped silicon carbide to form the silicon carbide bamboo-shaped nanowire array on the silicon carbide single crystal wafer.

[0029] Further, setting a layer of PDMS film on the side of the substrate with silicon carbide nanostructures and exposing the first end of the silicon carbide nanostructures out of the PDMS film includes:

[0030] Place the substrate on a spin coater and spin coat a layer of PDMS film with a thickness of 10 - 100 microns evenly on the side of the substrate with silicon carbide nanostructures;

[0031] Place the silicon carbide nanostructure array film coated with the PDMS film in a plasma cleaner, clean the side of the PDMS film away from the substrate, and gradually reduce the thickness of the PDMS film until the length of the first end of the silicon carbide nanostructure exposed on the surface of the PDMS film is 10-50 microns.

[0032] Further, detaching the substrate from the electrode mask plate includes:

[0033] By ion thinning method, bombarding the surface of the electrode mask plate with Ar ions, and controlling the thinning time until the base layer is completely removed.

[0034] Further, both the first electrode array layer and the second electrode array layer are in the array form of 1×1, 2×2, 3×3 ····· n×n, and the patterns of the first electrode array layer and the second electrode array layer are at least one of square, circular, triangular, and rhombic.

[0035] Further, it also includes the encapsulation of the sensor, which includes:

[0036] After leading out wires on the first electrode array layer and the second electrode array layer respectively, use a spin coater to spin coat a PDMS layer with a thickness of 10-100 microns on the first electrode array layer and the second electrode array layer respectively, and then dry and cure to obtain the encapsulated sensor.

[0037] A preparation method of a sensor based on co-doped SiC nanomaterials provided by the present invention constructs a tactile and visual integrated sensor through a nanostructure based on co-doped one-dimensional SiC. While realizing the coupling of the two types of sensing, it takes into account the miniaturization and portability of the sensor; at the same time, by co-doping boron and aluminum into silicon carbide, the present invention can expand the light response range of silicon carbide from the ultraviolet region to the visible region, and also increase the concentration of photo-generated carriers of silicon carbide under light illumination conditions, thereby further optimizing its light response ability and improving the sensitivity of visual sensing; in addition, by doping nitrogen into boron-aluminum co-doped silicon carbide, the structural asymmetry of silicon carbide can be increased, thereby enhancing its piezoelectric coefficient and increasing its piezoelectric response ability, and further improving the sensitivity of tactile sensing; based on anodic electrochemical etching treatment of boron-aluminum-nitrogen co-doped silicon carbide, one-dimensional silicon carbide nanostructures with different morphologies can be obtained, enabling the integrated sensor to be applied in a wider range of environments. In short, the present invention provides a preparation method of a sensor based on co-doped SiC nanomaterials with a simple operation process and strong practicability.

[0038] Other features and advantages of the present invention will be set forth in the following description, and in part will be obvious from the description, or may be learned by practice of the present invention. The objectives and other advantages of the present invention may be realized and attained by the structure particularly pointed out in the written description, claims, as well as the drawings.

[0039] The technical solution of the present invention will be further described in detail below with reference to the drawings and embodiments. Description of the Drawings

[0040] Figure 1 It is a process flow chart of a preparation method of a sensor based on co-doped SiC nanomaterials provided by an embodiment of the present invention;

[0041] Figure 2 It is an operation flow chart of a preparation method of a sensor based on co-doped SiC nanomaterials provided by an embodiment of the present invention. Detailed Embodiments

[0042] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0043] A preparation method of a sensor based on co-doped SiC nanomaterials provided by the present invention is shown in Figure 1 , and includes the following steps:

[0044] S100. Co-dope a single crystal silicon carbide wafer with a boron source, an aluminum source, and a nitrogen source in sequence to obtain boron-aluminum-nitrogen co-doped silicon carbide;

[0045] S200. Perform anodic electrochemical etching treatment on the boron-aluminum-nitrogen co-doped silicon carbide to obtain a silicon carbide nanostructure array film, and detach the silicon carbide nanostructure array film from the single crystal silicon carbide wafer; wherein, the silicon carbide nanostructure array film includes a substrate and silicon carbide nanostructures attached to the substrate;

[0046] S300. Set a layer of PDMS film on the side of the substrate with silicon carbide nanostructures, and expose the first end of the silicon carbide nanostructures from the PDMS film to complete the preparation of the electrode mask template;

[0047] S400. Deposit a first electrode array layer on the side of the electrode mask template that exposes the first end of the silicon carbide nanostructures;

[0048] S500. Detach the substrate from the electrode mask, and then expose the second end of the silicon carbide nanostructure on the surface of the PDMS film;

[0049] S600. Deposit a second electrode array layer on the side of the electrode mask that exposes the second end of the silicon carbide nanostructure, and thus complete the fabrication of the sensor.

[0050] The sensor prepared by the preparation method provided by the present invention constructs a tactile and visual integrated sensor based on a co-doped one-dimensional SiC nanostructure. While realizing the coupling of the two types of sensing, it takes into account the miniaturization and portability of the sensor; at the same time, by co-doping boron and aluminum into silicon carbide, the present invention can expand the light response range of silicon carbide from the ultraviolet region to the visible region, and also increase the concentration of photo-generated carriers in silicon carbide under light illumination conditions, thereby further optimizing its light response ability and improving the sensitivity of visual sensing; in addition, by doping nitrogen into boron- and aluminum-codoped silicon carbide, the structural asymmetry of silicon carbide can be increased, thereby enhancing its piezoelectric coefficient and increasing its piezoelectric response ability, and further improving the sensitivity of tactile sensing; based on anodic electrochemical etching treatment of boron-aluminum-nitrogen co-doped silicon carbide, one-dimensional silicon carbide nanostructures with different morphologies can be obtained, enabling the integrated sensor to be applied to a wider range of environments. In summary, the present invention provides a preparation method for a sensor based on co-doped SiC nanomaterials with a simple operation process and strong practicability.

[0051] Further, the co-doping of the silicon carbide single crystal wafer with a boron source, an aluminum source, and a nitrogen source includes the following steps:

[0052] (1) At 800 - 1200 °C, using B2O3 as the boron source, under a pressure of 10 - 500 Pa and in an argon atmosphere, perform boron doping on the silicon carbide single crystal wafer for 1 - 10 hours to obtain boron-doped silicon carbide;

[0053] (2) At 1000 - 1500 °C, using Al2O3 as the aluminum source, under a pressure of 1 - 50 Pa and in an argon atmosphere, perform aluminum doping on the boron-doped silicon carbide for 1 - 10 hours to obtain boron-aluminum co-doped silicon carbide;

[0054] (3) At 900 - 1400 °C, using N2O5 as the nitrogen source, under a pressure of 10 - 300 Pa and in an argon atmosphere, perform nitrogen doping on the boron-aluminum co-doped silicon carbide for 1 - 10 hours to obtain the boron-aluminum-nitrogen co-doped silicon carbide.

[0055] In this embodiment, by separately controlling the doping temperature and time of boron, aluminum, and nitrogen, silicon carbide with an aluminum doping concentration of 0.01 - 0.5 mol% obtained in step (2) is obtained, and the concentration of silicon carbide in the finally obtained boron-aluminum co-doped silicon carbide is 0.02 - 0.8 mol%. Here, boron-aluminum and silicon carbide are co-doped: one is to extend the light response range of silicon carbide from the ultraviolet region to the visible region; the other is to increase the concentration of photo-generated carriers in silicon carbide under light illumination conditions and improve its light response ability.

[0056] At the same time, in order to improve the piezoelectric response ability of silicon carbide, high-temperature diffusion doping of silicon carbide is carried out. Here, in step (3), at 900 - 1400 °C, using N2O5 as the nitrogen source, nitrogen doping of silicon carbide is carried out for 1 - 10 hours under an argon atmosphere protection at a pressure of 10 - 300 Pa. By controlling the doping temperature and time of nitrogen, silicon carbide with a nitrogen doping concentration of 0.01 - 1 mol% and a silicon carbide concentration of 0.01 - 1 mol% is obtained. Since the doping of nitrogen increases the structural asymmetry of silicon carbide, the boron-aluminum silicon carbide after nitrogen doping improves its piezoelectric coefficient and increases its piezoelectric response ability.

[0057] Furthermore, the boron-aluminum-nitrogen co-doped silicon carbide has a boron doping concentration of 0.01–1 mol%, an aluminum doping concentration of 0.01 - 0.5 mol%, a nitrogen doping concentration of 0.01 - 1 mol%, and a silicon carbide concentration of 0.01 - 1 mol%

[0058] In order to improve the light response ability of silicon carbide and enhance the effect of high-temperature diffusion co-doping of silicon carbide, in some embodiments, the resistance of the silicon carbide single crystal wafer is greater than 10 7 Ω·cm, and the crystal form of the silicon carbide single crystal wafer is at least one of 3C, 4H, and 6H.

[0059] It should be noted that in the obtained boron-aluminum co-doped silicon carbide, the concentration of 3C silicon carbide is 0.02 - 0.3 mol%, the concentration of 4H silicon carbide is 0.02 - 0.5 mol%, and the concentration of 6H silicon carbide is 0.02 - 0.8 mol%; in the obtained boron-aluminum-nitrogen co-doped silicon carbide, the concentration of 3C silicon carbide is 0.01 - 0.4 mol%, the concentration of 4H silicon carbide is 0.05 - 0.6 mol%, and the concentration of 6H silicon carbide is 0.1 - 1 mol%.

[0060] In some embodiments, an anodic electrochemical etching treatment is performed on the boron-aluminum-nitrogen co-doped silicon carbide to form a silicon carbide nanostructure array film on the silicon carbide single crystal wafer, including:

[0061] (1) Mix hydrofluoric acid, ethanol, and hydrogen peroxide to prepare an etching solution;

[0062] (2) Using the boron-aluminum-nitrogen co-doped silicon carbide as the anode and a graphite sheet as the cathode, at a voltage of 1 - 150 V, with the pulse waveform being a sine wave or a square wave, and the electro-chemical reaction time being 1 - 100 minutes, a silicon carbide nanostructure array film is formed on the silicon carbide single crystal wafer.

[0063] Furthermore, the silicon carbide nanostructure array film includes at least one of a silicon carbide smooth nanowire array, a silicon carbide nanoribbon array, and a silicon carbide bamboo-shaped nanowire array;

[0064] Among them, the anodic electro-chemical etching treatment of the boron-aluminum-nitrogen co-doped silicon carbide includes:

[0065] Under the conditions of a voltage of 1 - 50 V, a pulse waveform being a sine wave, and an electro-chemical reaction time being 1 - 30 minutes, the boron-aluminum-nitrogen co-doped silicon carbide is subjected to anodic electro-chemical etching treatment to form the silicon carbide smooth nanowire array on the silicon carbide single crystal wafer;

[0066] Under the conditions of a voltage of 1 - 100 V, a pulse waveform being a square wave, and an electro-chemical reaction time being 1 - 50 minutes, the boron-aluminum-nitrogen co-doped silicon carbide is subjected to anodic electro-chemical etching treatment to form the silicon carbide nanoribbon array on the silicon carbide single crystal wafer;

[0067] Under the conditions of a voltage of 30 - 150 V, a pulse waveform being a sine wave, and an electro-chemical reaction time being 30 - 100 minutes, the boron-aluminum-nitrogen co-doped silicon carbide is subjected to anodic electro-chemical etching treatment to form the silicon carbide bamboo-shaped nanowire array on the silicon carbide single crystal wafer.

[0068] It should be noted that when detaching the silicon carbide nanostructure array film from the silicon carbide single crystal wafer, when the voltage is 5 - 20 V, the pulse waveform is a triangular wave, and the time is 5 - 10 minutes, the silicon carbide nanostructure array film can be detached from the silicon carbide single crystal wafer. The total thickness of the obtained silicon carbide nanostructure array film is between 200 - 500 microns.

[0069] Furthermore, disposing a layer of PDMS film on the side of the substrate having the silicon carbide nanostructure and exposing the first end of the silicon carbide nanostructure out of the PDMS film includes the following steps:

[0070] (1) Placing the substrate on a spin coater and spin-coating a layer of PDMS film with a thickness of 10 - 100 microns evenly on the side of the substrate having the silicon carbide nanostructure;

[0071] (2) Place the silicon carbide nanostructure array film coated with the PDMS film in a plasma cleaner, clean the side of the PDMS film away from the substrate, and gradually reduce the thickness of the PDMS film until the length of the first end of the silicon carbide nanostructure exposed on the surface of the PDMS film is 10 - 50 microns.

[0072] Further, detaching the substrate from the electrode mask includes:

[0073] By ion thinning method, bombard the surface of the electrode mask with Ar ions, and control the thinning time until the base layer is completely removed.

[0074] In some embodiments, exposing the second end of the silicon carbide nanostructure on the surface of the PDMS film includes: placing the electrode mask in a plasma cleaner, using the plasma cleaner to clean the PDMS film, and gradually reducing the thickness of the side of the PDMS film close to the second end of the silicon carbide nanostructure until the length of the second end of the silicon carbide nanostructure exposed on the surface of the PDMS film is between 10 - 50 microns.

[0075] Further, both the first electrode array layer and the second electrode array layer are in the array form of 1×1, 2×2, 3×3 ····· n×n, and the patterns of the first electrode array layer and the second electrode array layer are at least one of square, circular, triangular, and rhombic. Among them, the electrode arrays on the first electrode array layer and the second electrode array layer correspond one by one.

[0076] In order to avoid the pollution of the sensor by the external environment and increase the service life of the sensor, in some embodiments, it further includes the encapsulation of the sensor, which includes:

[0077] After leading out wires on the first electrode array layer and the second electrode array layer respectively, use a spin coater to spin coat a PDMS layer with a thickness of 10 - 100 microns on the first electrode array layer and the second electrode array layer respectively, and then dry and cure to obtain the encapsulated sensor.

[0078] This application also conducts service tests on the sensors prepared by the method provided by the present invention. Through the service tests of the sensors, the following conclusions are obtained:

[0079] (1) Since silicon carbide has both optoelectronic response ability and piezoelectric effect, when the sensor is deformed by touch, due to the piezoelectric effect, a piezoelectric potential will be generated, outputting voltage and current signals, thereby detecting the touch.

[0080] (2) Since the magnitude of the piezopotential of the sensor is proportional to the magnitude of the deformation, the touch force can be judged by the magnitudes of the voltage and current values;

[0081] (3) When the sensor receives light, due to the photoelectric effect, a photopotential will be generated, and voltage and current signals will be output, thereby detecting the light; at the same time, the magnitude of the photopotential is proportional to the light intensity, and the light intensity can be judged by the magnitudes of the voltage and current values. Thus, a single device can detect both touch and light, realizing the construction of a tactile and visual integrated sensor.

[0082] The following specifically describes a tactile and visual integrated sensor provided by the present invention based on the construction of a co-doped one-dimensional SiC nanostructure through embodiments.

[0083] Example 1

[0084] See Figure 2 , a preparation method of a sensor based on a co-doped SiC nanomaterial provided by an embodiment of the present invention includes the following steps:

[0085] (1) Regulation of the light response ability of silicon carbide: As shown in Figure A, in this embodiment, an insulating silicon carbide single crystal wafer is selected as the raw material, and its resistance is greater than 10 7 Ω·cm, and the crystal form can be 3C, 4H, and 6H silicon carbide. In order to improve the light response ability of silicon carbide, high-temperature diffusion co-doping is carried out on silicon carbide. First, at 800 °C, using B2O3 as the boron source, boron doping of silicon carbide is carried out for 1 hour under an argon atmosphere with a pressure of 10 Pa. By regulating the doping temperature and time, silicon carbide with a boron doping concentration of 0.01 mol% is obtained. Then, at 1000 °C, using Al2O3 as the aluminum source, aluminum doping of silicon carbide is carried out for 1 hour under an argon atmosphere with a pressure of 1 Pa. By regulating the doping temperature and time, silicon carbide with an aluminum doping concentration of 0.01 mol% is obtained. Finally, boron-aluminum co-doped silicon carbide is obtained, and the total doping concentration is controlled to be 0.02 mol% for 3C silicon carbide, 0.02 mol% for 4H silicon carbide, and 0.02 mol% for 6H silicon carbide. Boron-aluminum co-doping: one is to expand the light response range of silicon carbide from the ultraviolet light region to the visible light region; the other is to increase the concentration of photo-generated carriers in silicon carbide under light illumination and improve its light response ability.

[0086] (2) Regulation of the piezoelectric response ability of silicon carbide: To enhance the piezoelectric response ability of silicon carbide, high-temperature diffusion doping is carried out on silicon carbide. At 900 °C, with N2O5 as the nitrogen source, under an argon atmosphere protection at a pressure of 10 Pa, nitrogen doping of silicon carbide is carried out for 1 hour. By regulating the doping temperature and time, boron-aluminum-nitrogen co-doped silicon carbide with a nitrogen doping concentration of 0.01 mol% is obtained, among which, 3C silicon carbide is 0.01 mol%, 4H silicon carbide is 0.05 mol%, and 6H silicon carbide is 0.1 mol%. The doping of nitrogen increases the structural asymmetry of silicon carbide, thereby enhancing its piezoelectric coefficient and increasing its piezoelectric response ability.

[0087] (3) Synthesis of one-dimensional silicon carbide nanostructure array films: As shown in Figure B, based on boron-aluminum-nitrogen co-doped silicon carbide, one-dimensional silicon carbide nanostructure arrays with different morphologies are prepared by anodic electrochemical etching. A mixed solution of hydrofluoric acid, ethanol, and hydrogen peroxide is used as the etching solution, silicon carbide is used as the anode, and a graphite sheet is used as the cathode. The etching voltage magnitude, waveform, and time are regulated. Among them, when the voltage is 1 V, the pulse waveform is a sine wave, and the time is 1 minute, a smooth silicon carbide nanowire array is obtained. When the voltage is 1 V, the pulse waveform is a square wave, and the time is 1 minute, a silicon carbide nanoribbon array is obtained. When the voltage is 30 V, the pulse waveform is a sine wave, and the time is 30 minutes, a bamboo-shaped silicon carbide nanowire array is obtained. Finally, as shown in Figure C, when the voltage is 5 V, the pulse waveform is a triangular wave, and the time is 5 minutes, the silicon carbide nanostructure array film can be detached from the silicon carbide single crystal wafer. As shown in Figure D, the total thickness of the obtained one-dimensional silicon carbide nanostructure array is between 200 microns.

[0088] (4) Fabrication of tactile and visual integrated sensor: Place the silicon carbide nanostructure array film with its B side facing down on a spin coater, and spin coat a PDMS film with a thickness difference of L on the A side. The thickness difference L is 10 micrometers, as shown in Figure E. Then place it in a plasma cleaner with the A side facing up and the B side facing down. Use the plasma cleaner to clean the PDMS film and gradually reduce its thickness until the exposed length of the one-dimensional silicon carbide is between 10 micrometers, as shown in Figure F. With the A side facing up and the B side facing down, using Figure F as the electrode mask template with a mask size of L2 between 5, deposit a 20-micrometer-thick ITO electrode array layer on the A side of the array film using standard photolithography technology, as shown in Figure G. Then turn the film over with the B side facing up and the A side facing down, as shown in Figure H. First, use ion thinning to bombard the sample surface with Ar ions and control the thinning time until the B-side base layer is completely removed, as shown in Figure I. Then place it in a plasma cleaner with the B side facing up and the A side facing down. Use the plasma cleaner to clean the PDMS film and gradually reduce its thickness until the exposed length of the one-dimensional silicon carbide is between 10 micrometers, as shown in Figure J. With the B side facing up and the A side facing down, using Figure G as the electrode mask template with a mask size of L3 between 5 micrometers, deposit a 20-micrometer-thick ITO electrode layer on the B side of the array film using standard photolithography technology, as shown in Figure K. The electrode arrays used in this device can be 1×1, 2×2, 3×3 ···· n×n, and the patterns of the electrode arrays can be different patterns such as square, circular, triangular, and diamond-shaped, which can be adjusted according to the actual application scenario. For example, when high detection resolution is required, increase the density of the electrode array; when the shape of the detected object is mostly square, use a square electrode; when the detected object is mostly circular, use a circular electrode, etc. The electrodes on the A side and the B side should be strictly aligned so that their electrode arrays correspond one by one.

[0089] (5) Encapsulation of the sensor: As shown in Figure L, lead out wires from the dot positions of the electrode arrays respectively. Using a spin coater with the A side facing up and the B side facing down, spin coat a 10-micrometer-thick PDMS layer on the A side evenly and dry and cure it; as shown in Figure M, lead out wires from the dot positions of the electrode arrays respectively. Using a spin coater with the B side facing up and the A side facing down, spin coat a 10-micrometer-thick PDMS layer on the B side evenly and dry and cure it. The encapsulated sensor is obtained.

[0090] (6) Service of the sensor: Silicon carbide has both optoelectronic response ability and piezoelectric effect. When the device is deformed by touch, due to the piezoelectric effect, a piezoelectric potential will be generated, outputting voltage and current signals, thereby detecting the touch. At the same time, the magnitude of the piezoelectric potential is proportional to the magnitude of the deformation, and the touch force can be judged by the magnitudes of the voltage and current values. When the device is illuminated, due to the photoelectric effect, a photoelectric potential will be generated, outputting voltage and current signals, thereby detecting the illumination. At the same time, the magnitude of the photoelectric potential is proportional to the illumination intensity, and the light intensity can be judged by the magnitudes of the voltage and current values. Thus, a single device can detect both touch and illumination, realizing the construction of a tactile and visual integrated sensor.

[0091] Example 2

[0092] See Figure 2 , a preparation method of a sensor based on co-doped SiC nanomaterials provided by an embodiment of the present invention includes the following steps:

[0093] (1) Regulation of the optoelectronic response ability of silicon carbide: As shown in Figure A, the present invention selects an insulating silicon carbide single crystal wafer as the raw material, whose resistance is greater than 10 7 Ω·cm, and the crystal form can be 3C, 4H, and 6H type silicon carbide. In order to improve the optoelectronic response ability of silicon carbide, high-temperature diffusion co-doping is carried out on silicon carbide. First, at 1000 °C, using B2O3 as the boron source, under an argon atmosphere with a pressure of 250 Pa, boron doping of silicon carbide is carried out for 5 hours. By regulating the doping temperature and time, silicon carbide with a boron doping concentration of 0.05 mol% is obtained. Then, at 1250 °C, using Al2O3 as the aluminum source, under an argon atmosphere with a pressure of 25 Pa, aluminum doping of silicon carbide is carried out for 5 hours. By regulating the doping temperature and time, boron-aluminum co-doped silicon carbide with an aluminum doping concentration of 0.25 mol% is obtained. Finally, boron-aluminum co-doped silicon carbide is obtained, and the total doping concentration is controlled to be 0.15 mol% for 3C silicon carbide, 0.25 mol% for 4H silicon carbide, and 0.4 mol% for 6H silicon carbide. Boron-aluminum co-doping: One is to expand the optoelectronic response range of silicon carbide from the ultraviolet region to the visible region; the other is to increase the concentration of photo-generated carriers in silicon carbide under illumination conditions, improving its optoelectronic response ability.

[0094] (2) Regulation of the piezoelectric response ability of silicon carbide: In order to improve the piezoelectric response ability of silicon carbide, high-temperature diffusion doping is carried out on silicon carbide. At 1200 °C, using N2O5 as the nitrogen source, under an argon atmosphere with a pressure of 150 Pa, nitrogen doping of silicon carbide is carried out for 5 hours. By regulating the doping temperature and time, boron-aluminum-nitrogen co-doped silicon carbide with a nitrogen doping concentration of 0.05 mol% is obtained, where 3C silicon carbide is 0.2 mol%, 4H silicon carbide is 0.3 mol%, and 6H silicon carbide is 0.5 mol%. By doping with nitrogen, the structural asymmetry of silicon carbide is increased, thereby improving its piezoelectric coefficient and increasing its piezoelectric response ability.

[0095] (3) Synthesis of one-dimensional silicon carbide nanostructure array film: As shown in Figure B, based on co-doped silicon carbide, one-dimensional silicon carbide nanostructure arrays with different morphologies were prepared by anodic electrochemical etching. A mixture of hydrofluoric acid, ethanol and hydrogen peroxide was used as the etching solution, silicon carbide was used as the anode, and the graphite sheet was used as the cathode. The etching voltage, waveform and time were regulated. Among them, when the voltage was 25V, the pulse waveform was a sine wave, and the time was 15 minutes, a smooth silicon carbide nanowire array was obtained. When the voltage was 50V, the pulse waveform was a square wave, and the time was 25 minutes, a silicon carbide nanobelt array was obtained. When the voltage was 90V, the pulse waveform was a sine wave, and the time was 60 minutes, a silicon carbide bamboo-shaped nanowire array was obtained. Finally, as shown in Figure C, when the voltage was 10V, the pulse waveform was a triangle wave, and the time was 8 minutes, the silicon carbide nanostructure array film could be detached from the silicon carbide single crystal wafer. As shown in Figure D, the total thickness of the obtained one-dimensional silicon carbide array was between 300 microns.

[0096] (4) Construction of integrated tactile and visual sensor: Place the silicon carbide nanostructure array film with the B surface facing down on a coating machine, and evenly spin-coat a PDMS film with a thickness difference of L of 50 microns on the A surface, as shown in Figure E. Then place it in a plasma cleaner with the A surface facing up and the B surface facing down. Use a plasma cleaner to clean the PDMS film and gradually reduce its thickness until the exposed length of the one-dimensional silicon carbide is between 25 microns, as shown in Figure F. With the A surface facing up and the B surface facing down, Figure F is used as an electrode mask template with a mask template size of L2 between 25 microns. Use a standard photolithography process to deposit a 60-micron thick ITO electrode array layer on the A surface of the array film, as shown in Figure G. Then place the film with the B surface facing up and the A surface facing down, as shown in Figure H. First, use the ion thinning method to bombard the sample surface with Ar ions, and control the thinning time until the base layer of the B surface is completely removed, as shown in Figure I. Then place it in a plasma cleaner with the B surface facing up and the A surface facing down. Use a plasma cleaner to clean the PDMS film and gradually reduce its thickness until the exposed length of one-dimensional silicon carbide is between 25 microns, as shown in Figure J. The B side faces up and the A side faces down. Figure G is used as the electrode pickling template. The size of the pickling template is between L3 and 25 microns. Use a standard photolithography process to deposit a 60-micron thick ITO electrode layer on the B side of the array film, as shown in Figure K. The electrode array used in the device can be 1×1, 2×2, 3×3·····n×n, and the pattern of the electrode array can be square, circular, triangular, diamond and other different patterns. It can be adjusted as needed according to the actual application scenario. For example, when high detection resolution is required, the density of the electrode array is increased. For example, when the shape of the detected object is likely to be square, a square electrode is used, and when the shape of the detected object is likely to be circular, a circular electrode is used. The electrodes on the A side and the B side must be strictly aligned so that their electrode arrays correspond one to one.

[0097] (5) Encapsulation of the sensor: As shown in Figure L, wires are respectively led out from the dot positions of the electrode array. Using a spin coater, with side A facing up and side B facing down, a PDMS layer with a thickness of 50 microns is evenly spin-coated on side A and dried and cured; as shown in Figure M, wires are respectively led out from the dot positions of the electrode array. Using a spin coater, with side B facing up and side A facing down, a PDMS layer with a thickness of 50 microns is evenly spin-coated on side B and dried and cured. The encapsulated sensor is obtained.

[0098] (6) Service of the sensor: Silicon carbide simultaneously has photoelectric response ability and piezoelectric effect. When the device is deformed by touch, due to the piezoelectric effect, a piezoelectric potential will be generated, and voltage and current signals will be output, thereby detecting the touch; at the same time, the magnitude of the piezoelectric potential is proportional to the magnitude of the deformation, and the touch force can be judged by the magnitudes of the voltage and current values. When the device is illuminated, due to the photoelectric effect, a photoelectric potential will be generated, and voltage and current signals will be output, thereby detecting the illumination; at the same time, the magnitude of the photoelectric potential is proportional to the illumination intensity, and the light intensity can be judged by the magnitudes of the voltage and current values. Thus, a single device can detect both touch and illumination, realizing the construction of a tactile and visual integrated sensor.

[0099] Example 3

[0100] See Figure 2 , a preparation method of a sensor based on co-doped SiC nanomaterials provided by an embodiment of the present invention includes the following steps:

[0101] (1) Regulation of the photoelectric response ability of silicon carbide: As shown in Figure A, the present invention selects an insulating silicon carbide single crystal wafer as the raw material, whose resistance is greater than 10 7 Ω·cm, and the crystal form can be 3C, 4H, and 6H type silicon carbide. In order to improve the photoelectric response ability of silicon carbide, high-temperature diffusion co-doping is carried out on silicon carbide. First, at 1200 °C, using B2O3 as the boron source, boron doping of silicon carbide is carried out for 10 hours under an argon atmosphere protection at a pressure of 500 Pa. By regulating the doping temperature and time, silicon carbide with a boron doping concentration of 1 mol% is obtained. Then, at 1500 °C, using Al2O3 as the aluminum source, aluminum doping of silicon carbide is carried out for 10 hours under an argon atmosphere protection at a pressure of 50 Pa. By regulating the doping temperature and time, boron-aluminum co-doped silicon carbide with an aluminum doping concentration of 0.5 mol% is obtained. Finally, boron-aluminum co-doped silicon carbide is obtained, and the total doping concentration is controlled at 0.3 mol% for 3C silicon carbide, 0.5 mol% for 4H silicon carbide, and 0.8 mol% for 6H silicon carbide. Boron-aluminum co-doping: one is to expand the photoelectric response range of silicon carbide from the ultraviolet light region to the visible light region; the other is to increase the photogenerated carrier concentration of silicon carbide under illumination conditions and improve its photoelectric response ability.

[0102] (2) Regulation of the piezoelectric response ability of silicon carbide: To enhance the piezoelectric response ability of silicon carbide, high-temperature diffusion doping is carried out on boron-aluminum co-doped silicon carbide. At 1400 °C, using N2O5 as the nitrogen source, nitrogen doping of silicon carbide is carried out for 10 hours under an argon atmosphere with a pressure of 300 Pa. By regulating the doping temperature and time, boron-aluminum-nitrogen co-doped silicon carbide with a nitrogen doping concentration of 1 mol% is obtained, among which, 3C silicon carbide is 0.4 mol%, 4H silicon carbide is 0.6 mol%, and 6H silicon carbide is 1 mol%. The doping of nitrogen increases the structural asymmetry of silicon carbide, thereby enhancing its piezoelectric coefficient and increasing its piezoelectric response ability.

[0103] (3) Synthesis of one-dimensional silicon carbide nanostructure array thin films: As shown in Figure B, based on co-doped silicon carbide, one-dimensional silicon carbide nanostructure arrays with different morphologies are prepared by anodic electrochemical etching. A mixed solution of hydrofluoric acid, ethanol, and hydrogen peroxide is used as the etching solution, silicon carbide is used as the anode, and a graphite sheet is used as the cathode. The etching voltage magnitude, waveform, and time are regulated. When the voltage is 50 V, the pulse waveform is a sine wave, and the time is 30 minutes, a smooth silicon carbide nanowire array is obtained. When the voltage is 100 V, the pulse waveform is a square wave, and the time is 50 minutes, a silicon carbide nanoribbon array is obtained. When the voltage is 150 V, the pulse waveform is a sine wave, and the time is 100 minutes, a bamboo-shaped silicon carbide nanowire array is obtained. Finally, as shown in Figure C, when the voltage is 20 V, the pulse waveform is a triangular wave, and the time is 10 minutes, the silicon carbide nanostructure array thin film can be detached from the silicon carbide single crystal wafer. As shown in Figure D, the total thickness of the obtained one-dimensional silicon carbide array is between 500 microns.

[0104] (4) Fabrication of integrated tactile and visual sensors: Place the silicon carbide nanostructure array film with its B side facing down on a spin coater, and spin coat a PDMS film with a thickness difference of L on its A side. The thickness difference L is 100 microns, as shown in Figure E. Then place it in a plasma cleaner with its A side facing up and B side facing down. Use the plasma cleaner to clean the PDMS film and gradually reduce its thickness until the exposed length of the one-dimensional silicon carbide is between 50 microns, as shown in Figure F. With its A side facing up and B side facing down, using Figure F as the electrode mask template with a mask size L2 between 50 microns, use the standard lithography process to deposit a 100-micron-thick ITO electrode array layer on the A side of the array film, as shown in Figure G. Then turn the film over so that its B side is facing up and A side is facing down, as shown in Figure H. First, use the ion thinning method to bombard the sample surface with Ar ions, and control the thinning time until the B-side substrate layer is completely removed, as shown in Figure I. Then place it in a plasma cleaner with its B side facing up and A side facing down. Use the plasma cleaner to clean the PDMS film and gradually reduce its thickness until the exposed length of the one-dimensional silicon carbide is between 50 microns, as shown in Figure J. With its B side facing up and A side facing down, using Figure G as the electrode mask template with a mask size L3 between 50 microns, use the standard lithography process to deposit a 100-micron-thick ITO electrode layer on the B side of the array film, as shown in Figure K. The electrode arrays used in this device can be 1×1, 2×2, 3×3 ···· n×n, and the patterns of the electrode arrays can be different patterns such as square, circular, triangular, rhombic, etc., which can be adjusted according to the actual application scenario. For example, when high detection resolution is required, increase the density of the electrode array. When the shape of the object to be detected is mostly square, use a square electrode, and when the object to be detected is mostly circular, use a circular electrode, etc. The electrodes on the A side and B side should be strictly aligned so that their electrode arrays correspond one by one.

[0105] (5) Encapsulation of the sensor: As shown in Figure L, lead out wires from the dot positions of the electrode arrays respectively. Using a spin coater with its A side facing up and B side facing down, spin coat a 100-micron-thick PDMS layer on the A side evenly and dry and cure it; as shown in Figure M, lead out wires from the dot positions of the electrode arrays respectively. Using a spin coater with its B side facing up and A side facing down, spin coat a 100-micron-thick PDMS layer on the B side evenly and dry and cure it to obtain the encapsulated sensor.

[0106] (6) Service of the sensor: Silicon carbide has both optoelectronic response ability and piezoelectric effect. When the device is deformed by touch, due to the piezoelectric effect, a piezoelectric potential will be generated, outputting voltage and current signals, thereby detecting the touch. At the same time, the magnitude of the piezoelectric potential is proportional to the magnitude of the deformation, and the touch force can be judged by the magnitudes of the voltage and current values. When the device is irradiated with light, due to the photoelectric effect, a photoelectric potential will be generated, outputting voltage and current signals, thereby detecting the light. At the same time, the magnitude of the photoelectric potential is proportional to the light intensity, and the light intensity can be judged by the magnitudes of the voltage and current values. Thus, a single device can detect both touch and light, realizing the construction of a tactile and visual integrated sensor.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. And these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A preparation method of a tactile and visual integrated sensor based on co-doped SiC nanomaterials, characterized in that, Including: Co-doping a silicon carbide single crystal wafer with a boron source, an aluminum source, and a nitrogen source in sequence to obtain boron-aluminum-nitrogen co-doped silicon carbide; Performing anodic electrochemical etching treatment on the boron-aluminum-nitrogen co-doped silicon carbide to obtain a silicon carbide nanostructure array film, and detaching the silicon carbide nanostructure array film from the silicon carbide single crystal wafer; wherein, the silicon carbide nanostructure array film includes a substrate and silicon carbide nanostructures attached to the substrate; Providing a layer of PDMS film on the side of the substrate having silicon carbide nanostructures, and exposing the first end of the silicon carbide nanostructures from the PDMS film to complete the preparation of the electrode mask template; Depositing a first electrode array layer on the side of the electrode mask template exposing the first end of the silicon carbide nanostructures; Detaching the substrate from the electrode mask template, and then exposing the second end of the silicon carbide nanostructures from the surface of the PDMS film; Depositing a second electrode array layer on the side of the electrode mask template exposing the second end of the silicon carbide nanostructures to complete the preparation of the sensor.

2. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, wherein, The co-doping of the silicon carbide single crystal wafer with the boron source, the aluminum source, and the nitrogen source in sequence includes: At 800 - 1200 °C, using B2O3 as the boron source, under an argon atmosphere protection at a pressure of 10 - 500 Pa, performing boron doping on the silicon carbide single crystal wafer for 1 - 10 hours to obtain boron-doped silicon carbide; At 1000 - 1500 °C, using Al2O3 as the aluminum source, under an argon atmosphere protection at a pressure of 1 - 50 Pa, performing aluminum doping on the boron-doped silicon carbide for 1 - 10 hours to obtain boron-aluminum co-doped silicon carbide; At 900 - 1400 °C, using N2O5 as the nitrogen source, under an argon atmosphere protection at a pressure of 10 - 300 Pa, performing nitrogen doping on the boron-aluminum co-doped silicon carbide for 1 - 10 hours to obtain the boron-aluminum-nitrogen co-doped silicon carbide.

3. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 2, characterized in that, In the boron-aluminum-nitrogen co-doped silicon carbide, the boron doping concentration is 0.01 - 1 mol%, the aluminum doping concentration is 0.01 - 0.5 mol%, the nitrogen doping concentration is 0.01 - 1 mol%, and the silicon carbide concentration is 0.01 - 1 mol%.

4. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, characterized in that, The resistance of the silicon carbide single crystal wafer is greater than 10 7 Ω·cm, and the crystal form of the silicon carbide single crystal wafer is at least one of 3C, 4H, and 6H.

5. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, wherein, The anodic electrochemical etching treatment of the boron-aluminum-nitrogen co-doped silicon carbide to form a silicon carbide nanostructure array film on the silicon carbide single crystal wafer includes: Mixing hydrofluoric acid, ethanol, and hydrogen peroxide to prepare an etching solution; Using the boron-aluminum-nitrogen co-doped silicon carbide as the anode and a graphite sheet as the cathode, at a voltage of 1 - 150 V, with a pulse waveform being a sine wave or a square wave, and an electrochemical reaction time of 1 - 100 minutes to form the silicon carbide nanostructure array film on the silicon carbide single crystal wafer.

6. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 5, characterized in that, The silicon carbide nanostructure array film includes at least one of a silicon carbide smooth nanowire array, a silicon carbide nanoribbon array, and a silicon carbide bamboo-shaped nanowire array; Wherein, the anodic electrochemical etching treatment of the boron-aluminum-nitrogen co-doped silicon carbide includes: Under the conditions of a voltage of 1 - 50 V, a pulse waveform of a sine wave, and an electrochemical reaction time of 1 - 30 minutes, anodic electrochemical etching treatment is performed on the boron-aluminum-nitrogen co-doped silicon carbide to form the silicon carbide smooth nanowire array on the silicon carbide single crystal wafer; Under the conditions of a voltage of 1 - 100 V, a pulse waveform of a square wave, and an electrochemical reaction time of 1 - 50 minutes, anodic electrochemical etching treatment is performed on the boron-aluminum-nitrogen co-doped silicon carbide to form the silicon carbide nanobelt array on the silicon carbide single crystal wafer; Under the conditions of a voltage of 30 - 150 V, a pulse waveform of a sine wave, and an electrochemical reaction time of 30 - 100 minutes, anodic electrochemical etching treatment is performed on the boron-aluminum-nitrogen co-doped silicon carbide to form the silicon carbide bamboo-shaped nanowire array on the silicon carbide single crystal wafer.

7. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, characterized in that Setting a layer of PDMS film on the side of the substrate with the silicon carbide nanostructure and exposing the first end of the silicon carbide nanostructure from the PDMS film includes: Placing the substrate on a spin coater and spin coating a layer of PDMS film with a thickness of 10 - 100 microns evenly on the side of the substrate with the silicon carbide nanostructure; Placing the silicon carbide nanostructure array film spin-coated with the PDMS film in a plasma cleaner, cleaning the side of the PDMS film away from the substrate, and gradually reducing the thickness of the PDMS film until the length of the first end of the silicon carbide nanostructure exposed from the surface of the PDMS film is 10 - 50 microns.

8. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, wherein, Detaching the substrate from the electrode mask plate includes: By ion thinning method, bombarding the surface of the electrode mask plate with Ar ions and controlling the thinning time until the substrate is completely removed.

9. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, characterized in that, Both the first electrode array layer and the second electrode array layer are in the array form of 1×1, 2×2, 3×3 ····· n×n, and the patterns of the first electrode array layer and the second electrode array layer are at least one of square, circular, triangular, and rhombic.

10. The preparation method of the tactile and visual integrated sensor based on co-doped SiC nanomaterials according to claim 1, characterized in that, It also includes the encapsulation of the sensor, which includes: After leading out wires on the first electrode array layer and the second electrode array layer respectively, using a spin coater, spin coating a layer of PDMS layer with a thickness of 10 - 100 microns on the first electrode array layer and the second electrode array layer respectively, and then drying and curing to obtain the encapsulated sensor.

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