Electromagnetic shielding substrate and display panel

Abstract

The present invention provides an electromagnetic shielding substrate, which includes a first substrate and a photoelectric auxiliary layer. The photoelectric auxiliary layer is arranged on the first substrate and directly contacts the first substrate. The photoelectric auxiliary layer includes a first sublayer and a second sublayer. The second sublayer is connected between the first sublayer and the first substrate. The chemical composition of the first sublayer is M x O y , the chemical composition of the second sublayer is M x O z , and M is selected from one of Nb, Mo, Ta, Te, Ti, Tl, Y, Yb, Zr and Zn. x and y are positive integers, and y-1

Description

Technical Field

[0001] The present invention relates to a substrate and a display panel, and in particular to an electromagnetic shielding substrate and a display panel having an electromagnetic protection effect. Background Art

[0002] The wide application of display panels has completely changed people's lifestyles. The visual revolution of the eye has further driven the vigorous development of display technologies. For special usage scenarios, such as medical facilities and aircraft, in order to reduce the external electromagnetic interference on precision electronic instruments, most display panels need to have an electromagnetic shielding function. Generally speaking, such display panels achieve the purpose of electromagnetic protection by plating a transparent conductive film layer or a conductive polymer film layer on the surface of the substrate on the display side. However, a high film thickness of the transparent conductive film layer will cause an increase in the reflectivity of external environmental light, while a low film thickness will make the process control difficult, resulting in too large a variation in the resistance value of the transparent conductive film layer. In addition, although the refractive index of the conductive polymer film layer approaches the refractive index of the commonly used materials of the substrate (such as glass), the hardness of such organic film layers is relatively low and the lifespan is also short. Therefore, an electromagnetic shielding layer that can be applied to display panels and has both low reflectivity and high reliability is still urgently needed to be developed. Summary of the Invention

[0003] The present invention provides a display panel with a high degree of integration of electromagnetic protection and anti-reflection performance.

[0004] The present invention provides an electromagnetic shielding substrate with better process margin.

[0005] The display panel of the present invention includes a first substrate, a second substrate, a photo-electric auxiliary layer, a pixel circuit layer, and a display medium layer. The first substrate has opposite first and second surfaces. The second substrate is disposed opposite to the first substrate. The photo-electric auxiliary layer is disposed on the first substrate and directly contacts the first surface or the second surface of the first substrate. The photo-electric auxiliary layer includes a first sub-layer and a second sub-layer. The second sub-layer is connected between the first sub-layer and the first substrate. The chemical composition of the first sub-layer is M x O y , and the chemical composition of the second sub-layer is M x O z , and M is selected from one of Nb, Mo, Ta, Te, Ti, Tl, Y, Yb, Zr, and Zn, where x and y are positive integers, and y - 1 < z < y. The pixel circuit layer is disposed on the second substrate. The display medium layer is disposed between the pixel circuit layer and the first substrate.

[0006] In an embodiment of the present invention, the first substrate of the above display panel is aluminosilicate glass.

[0007] In an embodiment of the present invention, the thickness of the second sub-layer of the above display panel is less than the thickness of the first sub-layer.

[0008] In one embodiment of the present invention, the chemical composition of the first sub-layer of the display panel is niobium pentoxide (Nb 2 O 5 ), molybdenum trioxide (MoO 3 ), Tantalum pentoxide (Ta 2 O 5 ), tellurium dioxide (TeO 2 ), titanium dioxide (TiO 2 ), thallium oxide (Tl 2 O), yttrium oxide (Y 2 O 3 ), Ytterbium oxide (Yb 2 O 3 )、ZrO 2 ) or zinc oxide (ZnO).

[0009] In one embodiment of the present invention, the sheet resistance of the photovoltaic auxiliary layer of the display panel is between 10 10 Ohm / square to 10 12 Between ohm / square.

[0010] In one embodiment of the present invention, the photoelectric auxiliary layer of the display panel is located between the first substrate and the display medium layer.

[0011] In one embodiment of the present invention, the display panel further comprises an optical auxiliary layer disposed on a side of the photoelectric auxiliary layer away from the first substrate, wherein the refractive index of the photoelectric auxiliary layer is greater than the refractive index of the optical auxiliary layer.

[0012] In one embodiment of the present invention, the material of the optical auxiliary layer of the display panel is silicon dioxide (SiO2), magnesium fluoride (MgF2) or sodium fluoroaluminate (Na 3 AlF 6 ).

[0013] In one embodiment of the present invention, the thickness of the optical auxiliary layer of the display panel is between 100 angstroms and 400 angstroms.

[0014] In one embodiment of the present invention, the thickness of the photovoltaic auxiliary layer of the display panel is between 50 angstroms and 200 angstroms.

[0015] The electromagnetic shielding substrate of the present invention comprises a first substrate and an optoelectronic auxiliary layer. The optoelectronic auxiliary layer is disposed on the first substrate and directly contacts the first substrate. The optoelectronic auxiliary layer comprises a first sublayer and a second sublayer. The second sublayer is connected between the first sublayer and the first substrate. The chemical composition of the first sublayer is M x O y , the chemical composition of the second sublayer is M x Oz , and M is selected from one of Nb, Mo, Ta, Te, Ti, Tl, Y, Yb, Zr and Zn, wherein x and y are positive integers, and y-1 <z<y。

[0016] Based on the above, in a display panel of an embodiment of the present invention, a photoelectric auxiliary layer is provided on the substrate located on one side of the display surface, so as to reduce the reflectivity of the display panel to external ambient light. By making the oxygen content of the metal oxide of the second sub-layer of the photoelectric auxiliary layer contacting the substrate lower than the oxygen content of the metal oxide of the first sub-layer not contacting the substrate, the photoelectric auxiliary layer can also have a specific conductivity to achieve the effect of electromagnetic protection. In addition, the use of inorganic metal oxides can also increase the hardness and service life of the photoelectric auxiliary layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic cross-sectional view of a display panel according to a first embodiment of the present invention;

[0018] Figure 2 is a schematic cross-sectional view of a display panel according to a second embodiment of the present invention.

[0019] Description of Reference Numerals

[0020] 10, 11: display panel;

[0021] 110: a first substrate;

[0022] 110s1: first surface;

[0023] 110s2: second surface;

[0024] 120: second substrate;

[0025] 125: pixel circuit layer;

[0026] 130: display medium layer;

[0027] 140, 140A: photoelectric auxiliary layer;

[0028] 141: first sublayer;

[0029] 142: second sublayer;

[0030] 150: optical auxiliary layer;

[0031] t1, t2: thickness. DETAILED DESCRIPTION

[0032] The above and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only referenced to the directions of the accompanying drawings. Therefore, the directional terms used are used to illustrate and not to limit the present invention. Some embodiments of the present invention will be listed below to explain the present invention in detail. Whenever possible, the same component symbols are used to represent the same or similar parts in the drawings and descriptions.

[0033] Figure 1 is a cross-sectional view of a display panel according to a first embodiment of the present invention. Figure 1 The display panel 10 includes a first substrate 110, a second substrate 120, a pixel circuit layer 125, a display medium layer 130, and an optoelectronic auxiliary layer 140. The first substrate 110 and the second substrate 120 are disposed on opposite sides of the display medium layer 130. The pixel circuit layer 125 is disposed on the second substrate 120 and between the second substrate 120 and the display medium layer 130. The display medium layer 130 is disposed between the pixel circuit layer 125 and the first substrate 110.

[0034] For example, the material of the first substrate 110 and the second substrate 120 may be aluminosilicate glass, but the present invention is not limited thereto. In other embodiments, the material of the first substrate 110 and the second substrate 120 may also be quartz or other suitable glass materials (e.g., soda-lime glass, borosilicate glass, or the like). It should be noted that, in this embodiment, the material of the first substrate 110 and the second substrate 120 may be the same, but the present invention is not limited thereto. In other embodiments, the material of the first substrate 110 and the second substrate 120 may also be different from each other.

[0035] In the present embodiment, the display medium layer 130 may be a liquid crystal layer and include a plurality of liquid crystal molecules (not shown). That is, the display panel 10 of the present embodiment may be a liquid crystal display panel, but the present invention is not limited thereto. In another embodiment, the display medium layer 130 may also be a stacked layer of organic light-emitting materials. That is, the display panel 10 may also be an organic light emitting diode (OLED) panel. In yet another embodiment, the display medium layer 130 may also include a plurality of light-emitting components electrically coupled to the pixel circuit layer 125, such as micro light emitting diodes (micro-LED) or sub-millimeter light-emitting diodes (mini-LED), but is not limited thereto.

[0036] On the other hand, the pixel circuit layer 125 may include a plurality of active components (not shown), a plurality of pixel electrodes (not shown) and a plurality of signal lines (not shown). These signal lines are arranged in two mutually perpendicular directions, respectively, and define a plurality of pixel regions of the display panel 10. The plurality of pixel electrodes are respectively disposed in the plurality of pixel regions, and each is electrically connected to at least one corresponding active component and at least two signal lines. However, the present invention is not limited thereto, and when the display panel 10 is a micro light emitting diode display panel or a sub-millimeter light emitting diode display panel, the pixel circuit layer 125 may also optionally include a plurality of bonding pads to electrically bond the plurality of light emitting components.

[0037] Further, in the present embodiment, one side of the display panel 10 provided with the first substrate 110 is the display side. The first substrate 110 has a first surface 110s1 and a second surface 110s2 opposite to each other. The photoelectric auxiliary layer 140 is optionally disposed on the first surface 110s1 of the first substrate 110 away from the display medium layer 130, and the display medium layer 130 is located on the second surface 110s2 of the first substrate 110, but the present invention is not limited thereto. It is particularly noted that the photoelectric auxiliary layer 140 is in direct contact with the first surface 110s1 of the first substrate 110 and is a stacked layer of multiple metal oxides. For example, the thickness of the photoelectric auxiliary layer 140 may be between 50 angstroms and 200 angstroms. It is particularly noted that since the photoelectric auxiliary layer 140 is disposed on the first substrate 110, the combination of the first substrate 110 and the photoelectric auxiliary layer 140 can be regarded as an electromagnetic shielding substrate, and this electromagnetic shielding substrate is not limited to the application on the display panel 10. For example, the first substrate 110 provided with the photoelectric auxiliary layer 140 may also be a substrate of a touch panel, but is not limited thereto.

[0038] The optoelectronic auxiliary layer 140 includes a first sub-layer 141 and a second sub-layer 142, wherein the thickness t2 of the second sub-layer 142 is less than the thickness t1 of the first sub-layer 141, and the oxygen content of the second sub-layer 142 is lower than that of the first sub-layer 141. Specifically, the chemical composition of the first sub-layer 141 is M x O y , and the chemical composition of the second sub-layer 142 is M x O z , where M can be selected from one of Nb, Mo, Ta, Te, Ti, Tl, Y, Yb, Zr, and Zn, x and y are positive integers, and y - 1 < z < y. For example, the chemical composition of the first sub-layer 141 is niobium pentoxide (Nb 2 O 5 ), molybdenum trioxide (MoO 3 ), tantalum pentoxide (Ta 2 O 5 ), tellurium dioxide (TeO 2 ), titanium dioxide (TiO 2 ), thallium oxide (Tl 2 O), yttrium oxide (Y 2 O 3 ), ytterbium oxide (Yb 2 O 3 ), zirconium dioxide (ZrO 2 ) or zinc oxide (ZnO).

[0039] In this embodiment, the chemical composition of the first sub-layer 141 of the optoelectronic auxiliary layer 140 is, for example, niobium pentoxide (Nb 2 O 5 ), and the chemical composition of the second sub-layer 142 is, for example, Nb 2 O z , where 4 < z < 5. For example, the method of forming the optoelectronic auxiliary layer 140 may include: providing a piece of aluminosilicate glass as the first substrate 110, forming an optoelectronic auxiliary material layer (not shown) on the first substrate 110, and performing a heat treatment step to transform the optoelectronic auxiliary material layer into the optoelectronic auxiliary layer 140, wherein the material of the optoelectronic auxiliary material layer is Nb 2 O 5 , and a part of the optoelectronic auxiliary material layer away from the first substrate 110 and another part of the optoelectronic auxiliary material layer in contact with the first substrate 110 respectively form the first sub-layer 141 and the second sub-layer 142 of the optoelectronic auxiliary layer 140.

[0040] Specifically, since the electrochemical potential of aluminum in the chemical composition of the first substrate 110 is greater than that of niobium in the photo-assisted material layer, the reaction driving force of aluminum with oxygen is higher than that of niobium with oxygen. Therefore, during the heat treatment of the photo-assisted material layer, some of the oxygen elements in the photo-assisted material layer in contact with the first substrate 110 tend to bond with aluminum, resulting in a decrease in the oxygen content of the part of the photo-assisted material layer in contact with the first substrate 110 and forming a second sub-layer 142 with a chemical composition of Nb 2 O z and 4 < z < 5.

[0041] It is worth mentioning that the sheet resistance of the photo-assisted material layer is greater than 10 12 ohms / square before heat treatment and is between 10 10 ohms / square and 10 12 ohms / square after the heat treatment step is completed. More specifically, in this embodiment, through the heat treatment process, the photo-assisted material layer directly in contact with the first substrate 110 can be transformed into a photo-assisted layer 140 with a specific conductivity (for example, a conductivity greater than 10 -4 Siemens / cm), and the conductivity of the photo-assisted layer 140 increases with the increase of the heat treatment temperature. In other words, the photo-assisted layer 140 obtained by heat treatment can be used as an electromagnetic shielding layer of the display panel 10 to achieve the effect of electromagnetic protection. On the other hand, since the photo-assisted layer 140 is made of inorganic metal oxides, the hardness and service life of its film layer can be significantly increased.

[0042] However, the present invention does not limit the formation method of the photo-assisted layer 140. In another embodiment, during the thermal evaporation process of the photo-assisted material layer, the second sub-layer 142 with a lower oxygen content (i.e., the part with a chemical composition of Nb 2 O z and 4 < z < 5 in the photo-assisted layer 140) can also be formed by controlling the oxygen flow rate in the reaction chamber.

[0043] Furthermore, the display panel 10 may also optionally include an optical auxiliary layer 150. The optical auxiliary layer 150 is disposed on a side of the photoelectric auxiliary layer 140 away from the first substrate 110, and the refractive index of the photoelectric auxiliary layer 140 is greater than the refractive index of the optical auxiliary layer 150. For example, the refractive index of the optical auxiliary layer 150 at a visible light wavelength may be less than 1.5, and the refractive index of the photoelectric auxiliary layer 140 at a visible light wavelength may be greater than 2, but is not limited thereto. In the present embodiment, the material of the optical auxiliary layer 150 is, for example, silicon dioxide (SiO2), but is not limited thereto. In other embodiments, the material of the optical auxiliary layer 150 may also be magnesium fluoride (MgF2), sodium fluoroaluminate (Na2O3), or the like. 3 AlF 6 ), or other materials with a low refractive index (eg, a refractive index of visible light wavelength less than 1.5). In addition, the thickness of the optical auxiliary layer 150 may be between 100 angstroms and 400 angstroms.

[0044] Since a photoelectric auxiliary layer 140 with a high refractive index and an optical auxiliary layer 150 with a low refractive index are sequentially stacked on the first surface 110s1 of the first substrate 110, reflection of light from the external environment on the first surface 110s1 of the first substrate 110 can be effectively suppressed, which helps to improve the display quality (e.g. dark state contrast) of the display panel 10.

[0045] Figure 2 is a cross-sectional schematic diagram of a display panel according to a second embodiment of the present invention. Figure 2 The display panel 11 of this embodiment and Figure 1 The difference between the display panel 10 and the display panel 11 is that the configuration of the photoelectric auxiliary layer is different. In this embodiment, the photoelectric auxiliary layer 140A of the display panel 11 is disposed on the second surface 110s2 of the first substrate 110 and is located between the display medium layer 130 and the first substrate 110.

[0046] Since the method for forming the photovoltaic auxiliary layer 140A of this embodiment is similar to the method for forming the photovoltaic auxiliary layer 140 of the aforementioned embodiment, please refer to the relevant paragraphs of the aforementioned embodiment for detailed description, and will not be repeated here. It is worth mentioning that compared with the conventional method of using a transparent conductive film layer (such as an indium tin oxide film) as an electromagnetic shielding layer, the photovoltaic auxiliary layer 140A of this embodiment has a larger sheet resistance value (for example, between 10 10 Ohm / square to 10 12ohm / square), and is more suitable for use in situations where the electromagnetic shielding layer needs to have a high sheet resistance value, and its sheet resistance value (or conductivity) can also be adjusted by the reaction temperature of the heat treatment step. In other words, unlike the traditional transparent conductive film layer that requires a thinner film thickness to obtain a higher sheet resistance value, making process control difficult, the optoelectronic auxiliary layer 140A of this embodiment can have a better process margin, and can allow the display panel 11 to achieve an electromagnetic protection effect while maintaining an optical performance of low reflectivity.

[0047] As described above, in a display panel of an embodiment of the present invention, a photoelectric auxiliary layer is provided on the substrate located on one side of the display surface, so as to reduce the reflectivity of the display panel to external ambient light. By making the oxygen content of the metal oxide of the second sub-layer of the photoelectric auxiliary layer contacting the substrate lower than the oxygen content of the metal oxide of the first sub-layer not contacting the substrate, the photoelectric auxiliary layer can also have a specific conductivity to achieve the effect of electromagnetic protection. In addition, the use of inorganic metal oxides can also increase the hardness and service life of the photoelectric auxiliary layer.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that: include: A first substrate having a first surface and a second surface opposite to each other, wherein the first substrate is aluminosilicate glass; a second substrate, arranged opposite to the first substrate; A photoelectric auxiliary layer is disposed on the first substrate and directly contacts the first surface or the second surface of the first substrate, and the photoelectric auxiliary layer includes: A first sublayer and a second sublayer, wherein the second sublayer is connected between the first sublayer and the first substrate, the thickness of the second sublayer is less than the thickness of the first sublayer, and during the heat treatment process of the photoelectric auxiliary material layer, a portion of oxygen elements in the photoelectric auxiliary material layer contacting the first substrate is bonded with an aluminum element of the first substrate, so that the oxygen content of the portion of the photoelectric auxiliary material layer contacting the first substrate is reduced, and the second sublayer is formed after the heat treatment process, and the chemical composition of the first sublayer is M x O y , the chemical composition of the second sublayer is M x O z , and M is selected from one of Nb, Mo, Ta, Te, Ti, Tl, Y, Yb, Zr and Zn, wherein x and y are positive integers, and y-1<z<y; a pixel circuit layer, disposed on the second substrate; and The display medium layer is arranged between the pixel circuit layer and the first substrate.

2. The display panel according to claim 1, characterized in that: The chemical composition of the first sublayer is niobium pentoxide, molybdenum trioxide, tantalum pentoxide, tellurium dioxide, titanium dioxide, thallium oxide, yttrium oxide, ytterbium oxide, zirconium dioxide or zinc oxide.

3. The display panel according to claim 1, characterized in that: The sheet resistance of the photovoltaic auxiliary layer is between 10 10 Ohm / square to 10 12 Between ohm / square.

4. The display panel according to claim 3, characterized in that: The photoelectric auxiliary layer is located between the first substrate and the display medium layer.

5. The display panel according to claim 1, characterized in that: The display panel further includes: The optical auxiliary layer is arranged on a side of the photoelectric auxiliary layer away from the first substrate, wherein the refractive index of the photoelectric auxiliary layer is greater than the refractive index of the optical auxiliary layer.

6. The display panel according to claim 5, characterized in that: The material of the optical auxiliary layer is silicon dioxide, magnesium fluoride or sodium fluoroaluminate.

7. The display panel according to claim 5, characterized in that: The thickness of the optical auxiliary layer is between 100 angstroms and 400 angstroms.

8. The display panel according to claim 1, characterized in that: The thickness of the photovoltaic auxiliary layer is between 50 angstroms and 200 angstroms.

9. An electromagnetic shielding substrate, characterized in that: include: A first substrate, wherein the first substrate is aluminosilicate glass; as well as A photoelectric auxiliary layer is disposed on the first substrate and directly contacts the first substrate, and the photoelectric auxiliary layer includes: A first sublayer and a second sublayer, wherein the second sublayer is connected between the first sublayer and the first substrate, the thickness of the second sublayer is less than the thickness of the first sublayer, and during the heat treatment process of the photoelectric auxiliary material layer, a portion of oxygen elements in the photoelectric auxiliary material layer contacting the first substrate is bonded with an aluminum element of the first substrate, so that the oxygen content of the portion of the photoelectric auxiliary material layer contacting the first substrate is reduced, and the second sublayer is formed after the heat treatment process, and the chemical composition of the first sublayer is M x O y , the chemical composition of the second sublayer is M x O z , and M is selected from one of Nb, Mo, Ta, Te, Ti, Tl, Y, Yb, Zr and Zn, wherein x and y are positive integers, and y-1<z<y.

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