A quantum dot optical compensation film and preparation method thereof

Through the quantum dot optical compensation film, the problem that light wavelength cannot be allocated as needed in facility agriculture is solved, and the precise light supply to specific crops is achieved, and the yield and quality of crops are improved.

CN114388677BActive Publication Date: 2025-04-08FOSHAN PUGAFU TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202011123364.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-10-20
Publication Date
2025-04-08
Estimated Expiration
2040-10-20

AI Technical Summary

Technical Problem

In existing facility agriculture, greenhouses cannot independently provide specific wavelengths of light for crops, resulting in the inability to allocate the light wavelengths as needed, affecting crop growth and yield.

Method used

A quantum dot optical compensation film is used, which consists of a flexible substrate and a double-layer photonic crystal self-encapsulated quantum dot layer. By regulating the particle size distribution of quantum dots, more accurate spectral emission is achieved. It is used in agriculture as an optical compensation film and accurately provides light at specific wavelengths.

Benefits of technology

The utilization rate of crops to sunlight is improved, crop yield and quality is improved, and compared with the prior art, it has higher luminescence stability, luminescence intensity and light source utilization rate.

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Abstract

The present invention relates to a quantum dot optical compensation film and a preparation method thereof, wherein the quantum dot optical compensation film comprises a flexible substrate and a double-layer photonic crystal self-encapsulated quantum dot layer impregnated and deposited on the flexible substrate; the double-layer photonic crystal self-encapsulated quantum dot layer comprises a first photonic crystal deposition layer, a quantum dot spray layer and a second photonic crystal deposition layer in sequence. The quantum dot optical compensation film of the present invention utilizes a double-layer photonic crystal film to realize self-encapsulation of quantum dots, spontaneously constructs an encapsulation structure, has a good protection effect, effectively isolates water and oxygen corrosion, has simple raw materials, does not require photothermal polymerization, does not require quencher mixing and participation, effectively ensures the light-induced stability of quantum dots, has the advantages of high luminous intensity, high light source utilization rate and the ability to improve irradiation uniformity. The preparation method of the quantum dot optical compensation film has a simple preparation process, a short production cycle and low cost, and is suitable for large-scale agricultural applications.
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Description

Technical Field

[0001] The invention relates to the technical field of quantum dot luminescent materials, and in particular to a quantum dot optical compensation film and a preparation method thereof. Background Art

[0002] With the popularization and promotion of the national urbanization policy, infrastructure construction such as roads, bridges, high-rise buildings, and commercial districts has been put on the agenda. In the process of urbanization, large and super-large cities are attracting more and more people due to employment opportunities and benefits. The acceleration of infrastructure construction will inevitably require more arable land resources. With the increase in population size, the demand for food crops is also increasing. How to use the increasingly scarce arable land resources more efficiently to meet food demand and how to further improve the output and quality of agricultural products will become a social problem that needs to be solved urgently.

[0003] With the rapid development of economy and society today, facility agriculture is favored by consumers because it can provide a large number of off-season vegetables, flowers, fruits, medicinal materials, etc. For a long time, facility agriculture has mainly relied on greenhouse films or glass to shield crops from wind and rain and create off-season climate characteristics to meet the special growth needs of crops. However, as one of the important factors affecting crop growth, the wavelength of light cannot be well distributed on demand, that is, the greenhouse cannot autonomously provide the specific wavelength of light that crops prefer. For example, some precious flowers, medicinal materials and other economic crops need to absorb short-wavelength blue light in the early stage of growth to accelerate cell division and growth; while in the middle and late stages of growth, they tend to need longer wavelength red-orange light for the synthesis of a large number of nutrients. Therefore, applying light irradiation of specific wavelengths in different growth cycles of crops will maximize the promotion of crop growth and improve crop yield and quality.

[0004] At present, modern facility agriculture mainly aims to improve the yield and quality of crops through the introduction of genetically modified varieties, the use of hormones, fertilizers or LED light source irradiation. So far, scientists still have great controversy over the impact of genetically modified crops or the use of plant hormones on human health; fertilizers will increase crop yields to a certain extent, but the increasing cost is a very thorny problem that plagues agricultural producers; in contrast, choosing a light source with a specific band to irradiate crops is indeed a very effective measure. The common method is to use a certain number of special LED light sources with a specific band to place them in the greenhouse, and regularly power on the crops to irradiate them to increase crop yields. As an energy-consuming point light source, LED must be evenly distributed and requires a large number to effectively irradiate the entire greenhouse, but its emission spectrum is wide, and it is not easy to filter out shorter wavelength light that is harmful to crops, and the comprehensive customization cost and energy consumption are large. Therefore, how to develop a band-adjustable, energy-saving surface light source is an urgent problem to be solved. Summary of the invention

[0005] Based on this, the object of the present invention is to provide a quantum dot optical compensation film, which has the advantages of good luminous stability, luminous intensity, high light source utilization rate and the ability to improve irradiation uniformity.

[0006] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0007] A quantum dot optical compensation film comprises a flexible substrate and a double-layer photonic crystal self-packaged quantum dot layer which is impregnated and deposited on the flexible substrate; the double-layer photonic crystal self-packaged quantum dot layer comprises a first photonic crystal deposition layer, a quantum dot spraying layer and a second photonic crystal deposition layer in sequence.

[0008] The quantum dot optical compensation film described in the embodiment of the present invention uses quantum dots as the light conversion layer material. Since quantum dots can absorb energy of shorter wavelengths and emit longer photons, their quantum yield is directly related to the fluorescence efficiency. By regulating the particle size distribution of quantum dots, the half-peak width of the emission wavelength can be accurately controlled to achieve more accurate spectral emission. When used in agricultural production as an optical compensation film, it can be accurately applied to specific crops to meet their selective absorption of light, which greatly improves the utilization rate of crops for sunlight, thereby improving crop yield and quality. Compared with the prior art that uses surface-coated silica or polymer monomers and coats quantum dots by thermal or photoreaction polymerization, surface-coated silica requires that the quantum dots be placed in a mixed solution of ethyl orthosilicate, ammonia water, and ethanol that is prone to luminescence quenching, and the problem of incompatibility between quantum dots and polar solvents is likely to occur, resulting in poor actual coating effects. Surface-coated polymer monomers require the addition of many types of initiators and sensitizers to the monomer solution, and complex side reactions will occur, further weakening The coating effect of inorganic silica and organic polymers on quantum dots may even lead to the problem of quenching of quantum dots. The quantum dot optical compensation film described in the embodiment of the present invention uses a double-layer photonic crystal film to achieve self-encapsulation of quantum dots, spontaneously constructs a packaging structure, has a good protection effect, effectively isolates water and oxygen erosion, has simple raw materials, does not require photothermal polymerization, and does not require the mixing of quenchers, effectively ensuring the light-induced stability of quantum dots. Secondly, the double-layer photonic crystal film structure utilizes the light-convex lens-like light-gathering effect of photonic crystals to make the quantum dots have a higher luminous intensity. At the same time, the quantum dots are self-encapsulated in two layers of optically dense media (photonic crystal films). When sunlight enters the photonic crystal film layer, the incident photons will be continuously totally reflected in the optically dense medium, thereby maximizing the excitation of quantum dots to emit light, improving the utilization rate of the light source, and making the quantum dots emit light similar to the "diffuse reflection" effect more significant. In addition, the light source release area of ​​the quantum dots is comprehensively improved under the coordination of the optical compensation film structure, the irradiation uniformity is improved, and the utilization efficiency of the required light by the crops is maximized, thereby improving the yield and quality of crops.

[0009] Furthermore, the flexible substrate material is selected from one or more mixtures of polyethylene terephthalate, polyethylene naphthalate, polyetheretherketone, polyethersulfone resin, polyarylate, polycarbonate, propylene glycol butyl ether and polyimide and textile materials.

[0010] Furthermore, the quantum dots are Zn-Cu-In-Se quantum dots, Cu-In-Ga-Se quantum dots, Cu-In-Se-S quantum dots, CuInS2 quantum dots, ZnS quantum dots, ZnSe quantum dots, ZnSeS quantum dots, ZnTe x Se 1-x A mixture of one or more of quantum dots, InP quantum dots and carbon quantum dots.

[0011] Furthermore, the quantum dots are quantum dots with a core-shell structure, which include a core part and a surface coating layer coated outside the core part; the core part is Zn-Cu-In-Se quantum dots, Cu-In-Ga-Se quantum dots, Cu-In-Se-S quantum dots, CuInS2 quantum dots, ZnS quantum dots, ZnSe quantum dots, ZnSeS quantum dots, ZnTe x Se 1-x The surface coating material is one or more of silicon dioxide and polyacrylic resin or a mixture of two of them. The core-shell structure can effectively improve the stability of quantum dots and the fluorescence quantum yield.

[0012] Furthermore, the surface coating layer is also modified and connected with surface functional groups, and the surface functional groups are one or more of thiol, hydroxyl, carboxyl, amino and ester groups. The modified and connected surface functional groups can increase the dispersibility of the quantum dots in the dispersant and make them more evenly dispersed.

[0013] Furthermore, the photonic crystal deposition layer material is one or more of SiO2 nanospheres, polymethyl methacrylate nanospheres, polycarbonate nanospheres or silicone nanospheres, which can effectively self-encapsulate and protect the quantum dot layer, prevent it from being corroded by water and oxygen, and effectively improve the stability of the material.

[0014] In addition, an embodiment of the present invention further provides a method for preparing the above-mentioned quantum dot optical compensation film, which comprises the following specific operation steps:

[0015] S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 0.1-5 g / L; the dispersant of the quantum dot dispersion is a mixture of one or more of n-octane, toluene, and chloroform, and the mass volume concentration of the quantum dots is 0.5-50 g / L;

[0016] S2, immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, and forming a first photonic crystal deposition layer on the surface of the substrate after evaporation of the dispersant;

[0017] S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer;

[0018] S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

[0019] Furthermore, in step S2 and step S4, the dispersant is evaporated at 25-100°C.

[0020] Furthermore, in the dipping operation of step S2 and step S4, the angle between the flexible substrate or the film material formed with the first photonic crystal deposition layer and the quantum dot spray layer and the horizontal plane during dipping is 0-90°.

[0021] The method for preparing the quantum dot optical compensation film described in the embodiment of the present invention has a simple preparation process, a short production cycle and low cost, and is suitable for large-scale agricultural applications.

[0022] For better understanding and implementation, the present invention is described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the structure of the quantum dot optical compensation film according to Example 1 of the present invention;

[0024] Figure 2 This is a schematic diagram of the process of preparing the quantum dot optical compensation film described in Example 3 of the present invention. DETAILED DESCRIPTION

[0025] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0026] Example 1

[0027] Please refer to Figure 1 , Figure 1 This is a schematic diagram of the structure of the quantum dot optical compensation film described in Example 1 of the present invention. As shown in the figure, Example 1 of the present invention provides a quantum dot optical compensation film, which includes a flexible substrate 10 and a double-layer photonic crystal self-packaged quantum dot layer 20 immersed and deposited on the flexible substrate; the double-layer photonic crystal self-packaged quantum dot layer 20 includes a first photonic crystal deposition layer 22, a quantum dot light conversion layer 24 and a second photonic crystal deposition layer 26 in sequence.

[0028] As an optional implementation, in this embodiment, the flexible substrate material is selected from one or more mixtures of polyethylene terephthalate, polyethylene naphthalate, polyetheretherketone, polyethersulfone resin, polyarylate, polycarbonate, propylene glycol butyl ether and polyimide and textile materials.

[0029] The quantum dots are Zn-Cu-In-Se quantum dots, Cu-In-Ga-Se quantum dots, Cu-In-Se-S quantum dots, CuInS2 quantum dots, ZnS quantum dots, ZnSe quantum dots, ZnSeS quantum dots, ZnTe x Se 1-x A mixture of one or more of quantum dots, InP quantum dots and carbon quantum dots.

[0030] The photonic crystal is a mixture of one or more of SiO2 nanospheres, polymethyl methacrylate nanospheres, polycarbonate nanospheres or organic silicon nanospheres.

[0031] Example 2

[0032] Embodiment 1 of the present invention provides a quantum dot optical compensation film, which is different from embodiment 1 in that: the quantum dots are quantum dots with a core-shell structure, which include a core part and a surface coating layer coated outside the core part; the core part is Zn-Cu-In-Se quantum dots, Cu-In-Ga-Se quantum dots, Cu-In-Se-S quantum dots, CuInS2 quantum dots, ZnS quantum dots, ZnSe quantum dots, ZnSeS quantum dots, ZnTe x Se 1-x The surface coating material is one or more of silicon dioxide and polyacrylic resin or a mixture of two of them. The core-shell structure can effectively improve the stability of quantum dots and the fluorescence quantum yield.

[0033] As an optional embodiment, the surface coating layer is also modified and connected with surface functional groups, and the surface functional groups are one or more of thiol, hydroxyl, carboxyl, amino and ester groups. The modified connection of surface functional groups can increase the dispersibility of quantum dots in the dispersant and make them more evenly dispersed.

[0034] The quantum dot optical compensation film described in Examples 1 and 2 of the present invention uses quantum dots as the light conversion layer material. Since quantum dots can absorb energy of shorter wavelengths and emit longer photons, their quantum yield is directly related to the fluorescence efficiency. By regulating the particle size distribution of quantum dots, the half-peak width of the emission wavelength can be accurately controlled to achieve more accurate spectral emission. When used in agricultural production as an optical compensation film, it can be accurately applied to specific crops to meet their selective absorption of light, which greatly improves the utilization rate of crops for sunlight, thereby improving crop yield and quality. Compared with the prior art that uses surface-coated silica or polymer monomers and coats quantum dots by thermal or photoreaction polymerization, surface-coated silica requires that the quantum dots be placed in a mixed solution of ethyl orthosilicate, ammonia water, and ethanol that is prone to luminescence quenching, and the problem of incompatibility between quantum dots and polar solvents is likely to occur, resulting in poor actual coating effect. Surface-coated polymer monomers require the addition of many types of initiators and sensitizers to the monomer solution, and complex side reactions will occur, further reducing The weak inorganic silica and organic polymer coating effect on quantum dots may even lead to the problem of quenching of quantum dots. The quantum dot optical compensation film described in the embodiment of the present invention uses a double-layer photonic crystal film to realize self-encapsulation of quantum dots, spontaneously constructs a packaging structure, has a good protection effect, effectively isolates water and oxygen erosion, has simple raw materials, does not require photothermal polymerization, and does not require the mixing of quenchers, effectively ensuring the light-induced stability of quantum dots. Secondly, the double-layer photonic crystal film structure utilizes the light-convex lens-like light-gathering effect of photonic crystals to make the quantum dots have a higher luminous intensity. At the same time, the quantum dots are self-encapsulated in two layers of optically dense media (photonic crystal films). When sunlight enters the photonic crystal film layer, the incident photons will be continuously totally reflected in the optically dense medium, thereby maximizing the excitation of quantum dots to emit light, improving the utilization rate of the light source, and making the quantum dots emit light similar to the "diffuse reflection" effect more significant. In addition, the light source release area of ​​the quantum dots is comprehensively improved under the coordination of the optical compensation film structure, the irradiation uniformity is improved, and the utilization efficiency of the required light by the crops is maximized, thereby improving the yield and quality of crops.

[0035] Example 3

[0036] Please refer to Figure 2 , Figure 2The process diagram of the method for preparing the quantum dot optical compensation film according to Example 3 of the present invention is shown in FIG. Example 3 of the present invention provides a method for preparing the quantum dot optical compensation film according to any one of Examples 1 to 2, which comprises the following specific steps:

[0037] S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 0.1 g / L; the dispersant of the quantum dot dispersion is n-octane, and the mass volume concentration of the quantum dots is 0.5 g / L;

[0038] S2, horizontally immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, and after pulling, evaporating the dispersant at 25° C. to form a first photonic crystal deposition layer on the surface of the substrate;

[0039] S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer, at which time the n-butane dispersion of quantum dots is deposited in large quantities at the low-lying areas of the gaps in the first photonic crystal deposition layer due to its gravity;

[0040] S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

[0041] Example 4

[0042] Embodiment 4 of the present invention provides a method for preparing the quantum dot optical compensation film of any one of Embodiments 1 to 2, which comprises the following specific steps:

[0043] S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 2 g / L; the dispersant of the quantum dot dispersion is n-octane, and the mass volume concentration of the quantum dot is 10 g / L;

[0044] S2, immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, wherein the angle between the flexible substrate and the horizontal plane is 45°, and after pulling, the dispersant is evaporated at 100° C. to form a first photonic crystal deposition layer on the surface of the substrate;

[0045] S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer, at which time the n-butane dispersion of quantum dots is deposited in large quantities at the low-lying areas of the gaps in the first photonic crystal deposition layer due to its gravity;

[0046] S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

[0047] Example 5

[0048] Embodiment 5 of the present invention provides a method for preparing the quantum dot optical compensation film of any one of Embodiments 1 to 2, which comprises the following specific steps:

[0049] S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 1 g / L; the dispersant of the quantum dot dispersion is n-octane, and the mass volume concentration of the quantum dots is 20 g / L;

[0050] S2, immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, wherein the angle between the flexible substrate and the horizontal plane is 60°, and after pulling, the dispersant is evaporated at 50° C. to form a first photonic crystal deposition layer on the surface of the substrate;

[0051] S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer, at which time the n-butane dispersion of quantum dots is deposited in large quantities at the low-lying areas of the gaps in the first photonic crystal deposition layer due to its gravity;

[0052] S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

[0053] Example 6

[0054] Embodiment 6 of the present invention provides a method for preparing the quantum dot optical compensation film of any one of Embodiments 1 to 2, which comprises the following specific steps:

[0055] S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 3 g / L; the dispersant of the quantum dot dispersion is n-octane, and the mass volume concentration of the quantum dots is 50 g / L;

[0056] S2, immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, wherein the angle between the flexible substrate and the horizontal plane is 90°, and after pulling, the dispersant is evaporated at 60° C. to form a first photonic crystal deposition layer on the surface of the substrate;

[0057] S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer, at which time the n-butane dispersion of quantum dots is deposited in large quantities at the low-lying areas of the gaps in the first photonic crystal deposition layer due to its gravity;

[0058] S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

[0059] Example 7

[0060] Embodiment 7 of the present invention provides a method for preparing the quantum dot optical compensation film of any one of Embodiments 1 to 2, which comprises the following specific steps:

[0061] S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 5 g / L; the dispersant of the quantum dot dispersion is n-octane, and the mass volume concentration of the quantum dot is 1 g / L;

[0062] S2, immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, wherein the angle between the flexible substrate and the horizontal plane is 30°, and after pulling, the dispersant is evaporated at 40° C. to form a first photonic crystal deposition layer on the surface of the substrate;

[0063] S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer, at which time the n-butane dispersion of quantum dots is deposited in large quantities at the low-lying areas of the gaps in the first photonic crystal deposition layer due to its gravity;

[0064] S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

[0065] The method for preparing the quantum dot optical compensation film described in Examples 3 to 7 of the present invention has a simple preparation process, a short production cycle and low cost, and is suitable for large-scale agricultural applications.

[0066] The above-mentioned embodiments only express several implementation methods of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A quantum dot optical compensation film, characterized in that: It comprises a flexible substrate and a double-layer photonic crystal self-encapsulated quantum dot layer which is impregnated and deposited on the flexible substrate; the double-layer photonic crystal self-encapsulated quantum dot layer comprises a first photonic crystal deposition layer, a quantum dot light conversion layer and a second photonic crystal deposition layer in sequence; The photonic crystals are a mixture of one or more of SiO2 nanospheres, polymethyl methacrylate nanospheres, polycarbonate nanospheres or silicone nanospheres; wherein the quantum dot light conversion layer is obtained by spraying a quantum dot dispersion on the first photonic crystal deposition layer, and the mass volume concentration of the quantum dots is 0.5 to 50 g / L; The quantum dots are quantum dots with a core-shell structure, which include a core part and a surface coating layer coated outside the core part; the core part is Zn-Cu-In-Se quantum dots, Cu-In-Ga-Se quantum dots, Cu-In-Se-S quantum dots, CuInS2 quantum dots, ZnS quantum dots, ZnSe quantum dots, ZnSeS quantum dots, ZnTe x Se 1-x The surface coating layer material is one or a mixture of silicon dioxide and polyacrylic acid resin.

2. The quantum dot optical compensation film according to claim 1, characterized in that: The flexible substrate material is selected from one or more mixtures of polyethylene terephthalate, polyethylene naphthalate, polyetheretherketone, polyethersulfone resin, polyarylate, polycarbonate, propylene glycol butyl ether and polyimide and textile materials.

3. The quantum dot optical compensation film according to claim 1, characterized in that: The quantum dots are Zn-Cu-In-Se quantum dots, Cu-In-Ga-Se quantum dots, Cu-In-Se-S quantum dots, CuInS2 quantum dots, ZnS quantum dots, ZnSe quantum dots, ZnSeS quantum dots, ZnTe x Se 1-x A mixture of one or more of quantum dots, InP quantum dots and carbon quantum dots.

4. The quantum dot optical compensation film according to claim 3, characterized in that: The surface coating layer is also modified and connected with surface functional groups, and the surface functional groups are one or more of thiol, hydroxyl, carboxyl, amino and ester groups.

5. A method for preparing the quantum dot optical compensation film according to any one of claims 1 to 4, characterized in that: The specific steps are as follows: S1. Select a flexible substrate of suitable size and type, and prepare a photonic crystal dispersion and a quantum dot dispersion, wherein the dispersant of the photonic crystal dispersion is ethanol, and the mass volume concentration of the photonic crystal is 0.1-5 g / L; the dispersant of the quantum dot dispersion is a mixture of one or more of n-octane, toluene, and chloroform, and the mass volume concentration of the quantum dots is 0.5-50 g / L; S2, immersing the flexible substrate in the silicon dioxide dispersion obtained in step S1, and forming a first photonic crystal deposition layer on the surface of the substrate after evaporation of the dispersant; S3, spraying the quantum dot dispersion obtained in step S1 on the film material obtained in step S2 to form a quantum dot light conversion layer; S4, repeating the operation of step S2 to form a second photonic crystal deposition layer on the quantum dot spray layer, thereby obtaining the quantum dot optical compensation film.

6. The method for preparing a quantum dot optical compensation film according to claim 5, characterized in that: In step S2 and step S4, the dispersant is evaporated at 25 to 100°C.

7. The method for preparing a quantum dot optical compensation film according to claim 5, characterized in that: In the dipping operation of step S2 and step S4, the flexible substrate or the film material formed with the first photonic crystal deposition layer and the quantum dot spray layer is pulled at an angle of 0 to 90°.

Citation Information

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