Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device and a substrate processing method. The substrate processing device (100) comprises: a substrate holding portion (120) for holding a plurality of substrates (W) arranged in a row along a row direction; a processing tank (110) for storing a processing liquid (L) for immersing the substrates (W) held by the substrate holding portion (120); and a plurality of bubble generating tubes (136) for generating bubbles in the processing liquid (L) by supplying gas to the processing liquid (L). Among the plurality of bubble generating tubes (136), the flow rate of gas supplied to the end bubble generating tubes (136b, 136c) located below the end of the substrate row immersed in the processing liquid (L) is greater than the flow rate of gas supplied to the center bubble generating tube (136a) located below the center of the substrate row.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] As is well known, substrates used in electronic components such as semiconductor devices and liquid crystal display devices are processed by substrate processing equipment. The substrates are processed by being immersed in a processing liquid in a processing tank.

[0003] In recent years, semiconductor elements formed on semiconductor substrates have become increasingly miniaturized and / or three-dimensional, and with this, the demand for uniform processing of substrates has become increasingly high. For example, a NAND element having a three-dimensional structure has a laminated structure with a three-dimensional concave-convex structure. In the case where a processing liquid is retained in the concave portion of the concave-convex structure of the element pattern, the liquid replacement in the concave portion becomes insufficient. Therefore, in order to promote sufficient liquid replacement of the entire substrate including the concave portion, a bubble generating tube is sometimes arranged below the substrate immersed in the processing tank, and bubbles are generated from the bubble generator to promote liquid replacement in the processing tank (for example, refer to patent documents 1 and 2).

[0004] In the substrate processing apparatus disclosed in Patent Document 1, while a substrate is immersed in a treatment tank containing a phosphoric acid aqueous solution for treatment, bubbles are generated within the treatment tank from a bubble generator positioned below the immersed substrate. The bubble generator is cylindrical and has multiple nozzles (multiple openings). A gas supply pipe is connected to one end of the bubble generator, which supplies water vapor to the bubble generator. The bubble generator generates bubbles containing water vapor within the phosphoric acid aqueous solution by ejecting water vapor from each nozzle into the phosphoric acid aqueous solution.

[0005] Furthermore, the substrate processing apparatus of Patent Document 2 captures an image of the state of bubble generation in liquid during a substrate processing step, and adjusts the amount of bubble generation from the bubble generator based on the captured image result.

[0006] [Background Art Literature]

[0007] [Patent Document]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2020-21822

[0009] [Patent Document 2] Japanese Patent Application Laid-Open No. 2018-48262 Summary of the Invention

[0010] [Problems to be solved by the invention]

[0011] However, the substrate processing apparatus described in Patent Document 1 sometimes produces uneven processing of each substrate. Furthermore, the substrate processing apparatus described in Patent Document 2 captures the state of bubble generation in the liquid during the substrate processing step, but it is difficult to individually adjust the amount of bubbles generated by the bubble generator after capturing the state of bubble generation in the liquid.

[0012] Typically, multiple substrates are processed during a single immersion process. Therefore, if the processing of each substrate varies, the characteristics of the semiconductor devices manufactured from the substrates will vary, resulting in a reduction in the yield of the semiconductor devices. For example, if the silicon concentration in the treatment solution used to etch the substrate varies, this can affect the etching properties of silicon nitride and silicon oxide. This effect is particularly significant when the substrate has a three-dimensional, concave-convex shape.

[0013] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can suppress uneven processing of each substrate in a processing bath.

[0014] [Technical means to solve the problem]

[0015] According to one aspect of the present invention, a substrate processing apparatus includes: a substrate holding portion for holding a plurality of substrates arranged in a row along a row direction; a processing tank for storing a processing liquid for immersing the substrates held by the substrate holding portion; and a plurality of bubble generating tubes for generating bubbles in the processing liquid by supplying gas to the processing liquid. Among the plurality of bubble generating tubes, the flow rate of gas supplied to the end bubble generating tubes located below the ends of the row of substrates immersed in the processing liquid is different from the flow rate of gas supplied to the center bubble generating tube located below the center of the row of substrates.

[0016] In one embodiment, the plurality of bubble generating tubes extend perpendicularly to a normal direction of the main surface of the substrate.

[0017] In one embodiment, the number of the central bubble generating tubes per unit area is smaller than the number of the end bubble generating tubes per unit area.

[0018] In one embodiment, among the plurality of bubble generating tubes, a flow rate of gas supplied to the end bubble generating tubes located below the end of the substrate array immersed in the processing liquid is greater than a flow rate of gas supplied to the central bubble generating tube located below the center of the substrate array.

[0019] In one embodiment, the substrate processing apparatus further comprises: a plurality of gas supply pipes connected to the plurality of bubble generating pipes; and a flow control mechanism for controlling the flow of gas flowing through the plurality of gas supply pipes. The flow control mechanism controls the flow of gas flowing through the plurality of gas supply pipes such that the flow of gas supplied to the end bubble generating pipes is greater than the flow of gas supplied to the center bubble generating pipe.

[0020] In one embodiment, the substrate processing apparatus further includes a pressure gauge configured to measure the pressure of the gas flowing through the gas supply pipe connected to the end bubble generating pipe and the pressure of the gas flowing through the gas supply pipe connected to the central bubble generating pipe.

[0021] In one embodiment, the substrate processing apparatus further includes a control unit configured to control the flow rate control mechanism. The control unit controls the flow rate of gas flowing through the plurality of gas supply pipes based on the pressure of gas flowing through the gas supply pipe connected to the end bubble generating pipe and the pressure of gas flowing through the gas supply pipe connected to the end bubble generating pipe.

[0022] In one embodiment, the substrate processing apparatus further includes: a control unit configured to control the flow rate control mechanism; and a storage unit configured to store a control program. The control unit controls the flow rate control mechanism according to the control program.

[0023] In one embodiment, the central bubble generating tube includes: a first central tube disposed below one side in a horizontal direction relative to the substrate; and a second central tube separated from the first central tube and arranged in a straight line with the first central tube below the other side in a horizontal direction relative to the substrate. The end bubble generating tube includes: a first end tube disposed below one side in a horizontal direction relative to the substrate; and a second end tube separated from the first end tube and arranged in a straight line with the first end tube below the other side in a horizontal direction relative to the substrate.

[0024] In one embodiment, the substrate processing apparatus further includes a liquid discharge pipe, and the liquid discharge pipe is disposed in the processing tank.

[0025] In one embodiment, the liquid ejection tube is arranged to extend parallel to a normal direction of the main surface of the substrate.

[0026] In one embodiment, the treatment solution includes a phosphoric acid solution.

[0027] According to another aspect of the present invention, a substrate processing method includes: an immersion step of immersing a plurality of substrates arranged in a row in a processing liquid stored in a processing tank; and a bubble supply step of generating bubbles in the processing liquid by supplying gas to a plurality of bubble generating tubes disposed in the processing tank, and supplying the bubbles to the substrates immersed in the processing liquid. The bubble supply step includes an uneven flow supply step, wherein the uneven flow supply step causes a different flow rate of gas to be supplied to end bubble generating tubes located below the ends of the substrate row than to be supplied to a center bubble generating tube located below the center of the substrate row.

[0028] In one embodiment, the plurality of bubble generating tubes extend perpendicularly to a normal direction of the main surface of the substrate.

[0029] In one embodiment, in the uneven flow supply step, the flow rate of gas supplied to the end bubble generating tubes located below the end of the substrate array among the multiple bubble generating tubes is greater than the flow rate of gas supplied to the central bubble generating tube located below the center of the substrate array.

[0030] In one embodiment, the bubble supply step further includes: a flow rate equalization step of supplying gas at equal flow rates to the end bubble generating tubes and the center bubble generating tube; and a pressure measurement step of measuring the pressure of gas flowing through the gas supply tubes connected to the end bubble generating tubes and the pressure of gas flowing through the gas supply tube connected to the center bubble generating tube in the flow rate equalization step. The flow rate unequalization step sets the flow rate of gas flowing through the gas supply tubes connected to the end bubble generating tubes and the flow rate of gas supplied to the gas supply tube connected to the center bubble generating tube based on the measurement results of the pressure measurement step.

[0031] [Effects of the Invention]

[0032] According to the present invention, it is possible to suppress uneven processing of individual substrates in a processing tank. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 (a) and (b) are schematic perspective views of the substrate processing apparatus according to this embodiment.

[0034] Figure 2 It is a schematic diagram of a substrate processing apparatus according to this embodiment.

[0035] Figure 3 (a) is a schematic side view of the substrate processing apparatus of this embodiment, and (b) is a schematic top view of the substrate processing apparatus of this embodiment.

[0036] Figure 4 (a) is a schematic diagram showing bubbles generated when gas is supplied at equal flow rates to a plurality of bubble generating tubes in a substrate processing apparatus, and (b) is a schematic diagram showing the flow of processing liquid in the substrate processing apparatus of this embodiment.

[0037] 5( a ) is a schematic side view of the substrate processing apparatus of this embodiment, and FIG. 5( b ) is a schematic diagram showing bubbles generated when gas is supplied at different flow rates to a plurality of bubble generating tubes in the substrate processing apparatus of this embodiment.

[0038] Figure 6 It is a schematic diagram of a substrate processing apparatus according to this embodiment.

[0039] Figure 7 This is a flowchart of the substrate processing method according to this embodiment.

[0040] Figure 8 (a) to (c) are schematic diagrams showing changes in a substrate subjected to etching processing using the substrate processing method of this embodiment.

[0041] Figure 9 It is a schematic top view of the substrate processing apparatus according to this embodiment and a partially enlarged view thereof.

[0042] Figure 10 (a) and (b) are schematic plan views of the substrate processing apparatus according to this embodiment.

[0043] Figure 11 It is a schematic diagram of a substrate processing apparatus according to this embodiment.

[0044] Figure 12 (a) is a schematic side view of the substrate processing apparatus of this embodiment, and (b) is a schematic top view of the substrate processing apparatus of this embodiment.

[0045] Figure 13 It is a schematic diagram of a substrate processing apparatus according to this embodiment.

[0046] Figure 14 It is a schematic diagram of a substrate processing apparatus according to this embodiment. DETAILED DESCRIPTION

[0047] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described with reference to the accompanying drawings. In addition, in the figures, the same reference symbols are given to the same or corresponding parts, and the description will not be repeated. In addition, in the specification of this case, in order to facilitate the understanding of the invention, the X-axis, Y-axis and Z-axis that are orthogonal to each other are sometimes described. Typically, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. In addition, in the specification of this case, in order to facilitate the understanding of the invention, the X-axis, Y-axis and Z-axis that are orthogonal to each other are sometimes described. Typically, the X-axis and Y-axis extend parallel to the main surface of the substrate or base material, and the Z-axis extends in a direction perpendicular to the main surface of the substrate or base material.

[0048] Reference Figure 1 An embodiment of a substrate processing apparatus 100 according to the present invention will be described. Figure 1 (a) and Figure 1 (b) is a schematic perspective view of the substrate processing apparatus 100 according to this embodiment. Figure 1 (a) is a schematic perspective view of a substrate W before being immersed in the processing liquid L in the processing tank 110. Figure 1 (b) is a schematic perspective view of the substrate W after being immersed in the processing liquid L in the processing tank 110.

[0049] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, process film formation, removal of at least a portion of a film, and cleaning.

[0050] The substrate W is in the form of a relatively thin plate. Typically, the substrate W is in the form of a relatively thin, substantially circular plate. Examples of substrates W include semiconductor wafers, substrates for liquid crystal displays (LCDs), substrates for plasma displays (PDPs), substrates for field emission displays (FEDs), optical disks, magnetic disks, magneto-optical disks, photomask substrates, ceramic substrates, and solar cell substrates.

[0051] The substrate processing apparatus 100 processes a substrate W using a processing liquid L. The processing liquid L performs at least one of etching, surface treatment, property imparting, process film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0052] The substrate processing apparatus 100 processes a plurality of substrates W at a time using the processing liquid L. Alternatively, the substrate processing apparatus 100 may process a plurality of substrates W in units of a specific number using the processing liquid L. The specific number is an integer greater than or equal to 1. Here, the substrate processing apparatus 100 processes a plurality of substrates W at a time.

[0053] For example, the substrate processing apparatus 100 performs an etching process on a silicon oxide film (SiO2 film) and a silicon nitride film (SiN film) on the pattern-forming side of a substrate W, which includes a silicon substrate. In this etching process, either the silicon oxide film or the silicon nitride film is removed from the surface of the substrate W.

[0054] The treatment liquid L contains phosphoric acid (H3PO4). The treatment liquid L includes, for example, an aqueous phosphoric acid solution, a liquid containing an additive in the aqueous phosphoric acid solution, a mixed acid containing phosphoric acid, or a mixed acid containing phosphoric acid and an additive. For example, when a solution of approximately 89% by mass of phosphoric acid (H3PO4) and approximately 11% by mass of water (deionized water) at a temperature of approximately 157°C (hereinafter referred to as "phosphoric acid solution") is used as the treatment liquid L, the silicon nitride film (SiN film) is removed from the surface of the substrate W. In other words, a high-temperature, high-acid concentration solution free of impurities is used as the treatment liquid L, and the treatment liquid L dissolves the silicon (SiN film). 4+ ). In addition, the type of the processing liquid L is not particularly limited as long as it can process the substrate W. In addition, the temperature of the processing liquid L is not particularly limited.

[0055] The substrate processing apparatus 100 includes a processing tank 110 and a substrate holding portion 120. The processing tank 110 stores a processing liquid L for processing a substrate W.

[0056] The substrate holder 120 holds a substrate W. The normal direction of the main surface of the substrate W held by the substrate holder 120 is parallel to the Y direction. Multiple substrates W are arranged in a row along the Y direction. In other words, the multiple substrates W are arranged approximately parallel to the horizontal direction. In addition, the normal lines of each of the multiple substrates W extend in the Y direction, and each of the multiple substrates W extends approximately parallel to the X direction. The substrate holder 120 moves the substrate W while holding it. For example, the substrate holder 120 moves the substrate W vertically upward or vertically downward while holding the substrate W.

[0057] Typically, the substrate holding portion 120 holds a plurality of substrates W at a time. Here, the substrate holding portion 120 holds substrates W in a substrate row arranged in a row along the Y direction.

[0058] Specifically, the substrate holder 120 includes a lift. The substrate holder 120 moves vertically upward or downward while holding a plurality of substrates W. As the substrate holder 120 moves vertically downward, the plurality of substrates W held by the substrate holder 120 are immersed in the processing liquid L stored in the inner tank 112.

[0059] Figure 1In (a), the substrate holding unit 120 is located above the processing tank 110. The substrate holding unit 120 is lowered vertically downward (in the Z direction) while holding a plurality of substrates W. Thus, the plurality of substrates W are placed into the processing tank 110.

[0060] like Figure 1 As shown in FIG. 1 , when the substrate holding unit 120 descends to the processing tank 110 , the plurality of substrates W are immersed in the processing liquid L in the processing tank 110 . The substrate holding unit 120 immerses the plurality of substrates W arranged at predetermined intervals in the processing liquid L in the processing tank 110 .

[0061] The substrate holding portion 120 further includes a main plate 122 and a holding rod 124. The main plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends from one main surface of the main plate 122 in the horizontal direction (Y direction). Figure 1 In Figures 1(a) and 1(b), three holding rods 124 extend horizontally from one main surface of the main body plate 122. Multiple substrates W are aligned at predetermined intervals, and the holding rods 124 abut the lower edges of the substrates W and hold them in an upright position (vertical position).

[0062] The substrate holding portion 120 further includes a lifting unit 126. The lifting unit 126 lifts the body plate 122 between the following positions: a processing position ( Figure 1 (b) shown in the position), the plurality of substrates W held in the substrate holding portion 120 are located in the processing tank 110; and the retreat position ( Figure 1 (a), the plurality of substrates W held by the substrate holding portion 120 are positioned above the processing tank 110. Thus, the main plate 122 is moved to the processing position by the lifting unit 126, and the plurality of substrates W held by the holding rods 124 are immersed in the processing liquid L.

[0063] Next, refer to Figure 1 and Figure 2 The substrate processing apparatus 100 according to this embodiment will be described. Figure 2 is a schematic diagram of the substrate processing apparatus 100 .

[0064] like Figure 2 As shown, here, the substrates W are divided into three regions based on their positions in the arrangement direction (Y direction). The three regions include a central region A, an end region B, and an end region C. The end region B, central region A, and end region C are arranged in the Y direction of the arrangement of the substrates W. The central region A is located between the end regions B and C. The end regions B are located in the -Y direction relative to the central region A, and the end regions C are located in the +Y direction relative to the central region A.

[0065] The substrate processing apparatus 100 further includes a gas supply unit 130 and a control unit 180. The gas supply unit 130 supplies gas to the processing tank 110. Specifically, the gas supply unit 130 supplies gas to the processing liquid L stored in the processing tank 110. The gas supply unit 130 supplies gas to the processing tank 110, thereby facilitating the processing of the substrate W.

[0066] The gas supply unit 130 supplies gas to the processing tank 110 to form bubbles in the processing liquid L. The bubbles formed in the processing liquid L float in the processing liquid L and reach the interface between the processing liquid L and gas (eg, air or a specific ambient gas) in the processing tank 110.

[0067] When bubbles float in the processing liquid L, they come into contact with the surface of the substrate W. In this case, the bubbles stir the phosphoric acid, thereby eliminating uneven silicon concentration in the phosphoric acid. This improves etching uniformity.

[0068] The gas supply unit 130 includes a gas supply source 132, a gas supply pipe 134, and a bubble generating pipe 136. The gas supply source 132 stores gas. The gas is supplied from the gas supply source 132.

[0069] The gas supply pipe 134 connects the gas supply source 132 and the bubble generation pipe 136 . The gas supplied from the gas supply source 132 flows into the bubble generation pipe 136 through the gas supply pipe 134 .

[0070] The bubble generating tube 136 is disposed in the processing tank 110. Typically, the bubble generating tube 136 is disposed on the bottom surface of the processing tank 110.

[0071] Multiple bubble generating tubes 136 are arranged between substrates W arranged along the arrangement direction, with each tube spaced one substrate W apart. The multiple bubble generating tubes 136 are arranged across the central region A, the end regions B, and the end regions C. In this specification, among the multiple bubble generating tubes 136, the bubble generating tubes 136 located below the substrates W in the central region A are sometimes referred to as central bubble generating tubes 136a. Furthermore, among the multiple bubble generating tubes 136, the bubble generating tubes 136 located below the substrates W in the end regions B are sometimes referred to as end bubble generating tubes 136b, and the bubble generating tubes 136 located below the substrates W in the end regions C are sometimes referred to as end bubble generating tubes 136c.

[0072] For example, the plurality of bubble generating tubes 136 may be classified into a central bubble generating tube 136a, end bubble generating tubes 136b, and end bubble generating tubes 136c in equal or substantially equal numbers. Alternatively, the plurality of bubble generating tubes 136 may be unequally classified into the central bubble generating tube 136a, end bubble generating tubes 136b, and end bubble generating tubes 136c. For example, when the number of the plurality of bubble generating tubes 136 is seven or more, each of the central bubble generating tube 136a, end bubble generating tubes 136b, and end bubble generating tubes 136c preferably includes two or more bubble generating tubes 136. Furthermore, the number of end bubble generating tubes 136b may be equal to the number of end bubble generating tubes 136c. Furthermore, the number of the central bubble generating tube 136a may be less than the sum of the number of the end bubble generating tubes 136b and the number of the end bubble generating tubes 136c. Alternatively, the number of the central bubble generating tubes 136a may be smaller than the number of the end bubble generating tubes 136b and the number of the end bubble generating tubes 136c.

[0073] The gas supply unit 130 may further include a flow control mechanism 140. The flow control mechanism 140 is attached to the gas supply pipe 134. The flow control mechanism 140 controls at least one of the pressure and flow rate of the gas flowing through the gas supply pipe 134. For example, the flow control mechanism 140 controls the flow rate of the gas flowing through the gas supply pipe 134. As an example, the flow control mechanism 140 maintains the pressure of the gas flowing through the gas supply pipe 134 at a fixed pressure and controls the flow rate of the gas according to the process.

[0074] For example, the flow control mechanism 140 includes a nozzle or an adjustment valve that opens and closes the flow path of the gas supply pipe 134. In addition, the flow control mechanism 140 may also include a pressure gauge and a flow meter.

[0075] As described above, the bubble generating tube 136 is disposed within the processing tank 110. Meanwhile, the gas supply source 132 and the flow control mechanism 140 are disposed outside the processing tank 110, and the gas supply tube 134 is also disposed outside the processing tank 110. Alternatively, at least a portion of the gas supply tube 134 may be disposed within the processing tank 110, and the gas supply tube 134 may be connected to the bubble generating tube 136 within the processing tank 110.

[0076] The control device 180 controls various operations of the substrate processing apparatus 100. Typically, the control device 180 controls the gas supply unit 130. For example, the control device 180 controls the flow rate control mechanism 140.

[0077] The control device 180 includes a control unit 182 and a storage unit 184. The control unit 182 includes a processor. For example, the control unit 182 includes a central processing unit (CPU). Alternatively, the control unit 182 may include a general-purpose computing unit.

[0078] The storage unit 184 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. The plurality of recipes each define the processing content and processing sequence of the substrate W.

[0079] Storage unit 184 includes a primary storage device and an auxiliary storage device. The primary storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. Storage unit 184 may also include removable media. Control unit 182 executes computer programs stored in storage unit 184 to perform substrate processing operations.

[0080] A computer program that predefines a procedure is stored in the storage unit 184. The substrate processing apparatus 100 operates according to the procedure specified by the computer program.

[0081] The control unit 182 controls the gas supply unit 130. The supply of gas from the gas supply unit 130 is controlled by the control of the control unit 182. Specifically, the control unit 182 controls the start and stop of gas supply from the gas supply unit 130. In addition, the control unit 182 controls the flow control mechanism 140 to control the flow rate of gas supplied to the bubble generating tube 136 in the processing tank 110. As an example, the control unit 182 can also control the supply of gas to the bubble generating tube 136 by controlling a nozzle, an adjustment valve, etc. provided on the gas supply tube 134 arranged outside the processing tank 110.

[0082] Furthermore, the control unit 182 controls the lifting unit 126 . The control unit 182 controls the main body plate 122 to move up and down relative to the processing liquid L in the processing tank 110 .

[0083] Next, refer to Figure 3 A substrate processing apparatus 100 according to this embodiment will be described. Figure 3 (a) is a schematic side view of the substrate processing apparatus 100 according to this embodiment. Figure 3 (b) is a schematic top view of the substrate processing apparatus 100 of this embodiment. Figure 3 (a) and Figure 3 (b) shows the processing tank 110 in the substrate processing apparatus 100 divided into a central area A, an end area B, and an end area C. Figure 3 In (b), the substrate holding portion 120 is omitted.

[0084] like Figure 3 As shown in (a), the substrate holding portion 120 holds a plurality of substrates W arranged in a row along the Y direction. The plurality of substrates W are arranged at equal intervals. For example, the interval between adjacent substrates W is 2 mm or more and 20 mm or less.

[0085] The substrate W has a principal surface Wa and a principal surface Wb. The principal surface Wa is the front surface of the substrate, and the principal surface Wb is the back surface of the substrate W. Here, the principal surfaces Wa of adjacent and opposing substrates W face each other, and the principal surfaces Wb of adjacent and opposing substrates W face each other.

[0086] Here, the bubble generating tube 136 extends in a direction intersecting the direction in which the substrates W are arranged. The bubble generating tube 136 is located between two adjacent substrates W among the plurality of substrates W. The bubble generating tube 136 extends in the X direction. The bubble generating tube 136 is arranged in the direction in which the plurality of substrates W are arranged, with each substrate W spaced apart.

[0087] The bubble generating tube 136 is located below the substrate W held by the substrate holding portion 120 . Typically, the bubble generating tube 136 is disposed on the bottom surface of the processing tank 110 .

[0088] like Figure 3 As shown in FIG. 2( b ), the bubble generating tube 136 is provided with a plurality of openings 136p. The plurality of openings 136p are arranged in a row in the bubble generating tube 136. The plurality of openings 136p are arranged at equal intervals. The plurality of openings 136p in a single bubble generating tube 136 are located between two substrates W arranged along the arrangement direction (Y direction).

[0089] The bubble generating tubes 136 include a central bubble generating tube 136a, end bubble generating tubes 136b, and end bubble generating tubes 136c. The end bubble generating tubes 136b, central bubble generating tube 136a, and end bubble generating tubes 136c are arranged in order from the -Y direction toward the +Y direction. Each bubble generating tube 136 has a plurality of openings 136p. The openings 136p are of equal size and spacing. Thus, the bubble generating tubes 136 have the same structure.

[0090] The gas supply source 132 is connected to each of a plurality of gas supply tubes 134. The gas supply tubes 134 connect the gas supply source 132 to the bubble generating tubes 136. Furthermore, a flow control mechanism 140 is attached to the gas supply tubes 134. Gas supplied from the gas supply source 132 flows through the gas supply tubes 134 to the bubble generating tubes 136. Thus, gas, whose flow rate is controlled by the flow control mechanism 140, is supplied from the gas supply source 132 to the bubble generating tubes 136 via the gas supply tubes 134.

[0091] The flow rate (gas flow rate) of the gas supplied to the bubble generating tubes 136 can be controlled by the flow control mechanism 140. The flow control mechanism 140 can make the flow rate of the gas supplied to the central bubble generating tube 136a, the end bubble generating tubes 136b, and the end bubble generating tubes 136c equal. Alternatively, the flow control mechanism 140 can make the flow rate of the gas supplied to the central bubble generating tube 136a, the end bubble generating tubes 136b, and the end bubble generating tubes 136c different.

[0092] In this specification, among the multiple gas supply pipes 134, the gas supply pipe 134 connected to the central bubble generating pipe 136a is sometimes referred to as the gas supply pipe 134a. Similarly, among the multiple gas supply pipes 134, the gas supply pipe 134 connected to the end bubble generating pipe 136b is sometimes referred to as the gas supply pipe 134b, and the gas supply pipe 134 connected to the end bubble generating pipe 136c is sometimes referred to as the gas supply pipe 134c.

[0093] In this specification, when there are multiple flow control mechanisms 140, the flow control mechanism 140 that controls the flow rate of gas supplied to the gas supply pipe 134a may be referred to as flow control mechanism 140a. Similarly, the flow control mechanism 140 that controls the flow rate of gas supplied to the gas supply pipe 134b may be referred to as flow control mechanism 140b, and the flow control mechanism 140 that controls the flow rate of gas supplied to the gas supply pipe 134c may be referred to as flow control mechanism 140c.

[0094] Here, gas is supplied from the same gas supply source 132 to the plurality of bubble generating tubes 136. However, gas may be supplied from different gas supply sources to the plurality of bubble generating tubes 136. In this case, gas may be supplied from the gas supply source 132 to the bubble generating tubes 136 at a predetermined flow rate.

[0095] Next, refer to Figures 1 to 4 A substrate processing apparatus 100 according to this embodiment will be described. Figure 4 FIG. 4( a ) and FIG. 4( b ) are schematic diagrams of the substrate processing apparatus 100 . Figure 4 (a) shows bubbles generated when gas is supplied at equal flow rates to a plurality of bubble generating tubes 136 in the substrate processing apparatus 100. Figure 4 (b) shows the flow of the processing liquid L during the bubble generation process in the substrate processing apparatus 100 of this embodiment. Here, the flow rate control mechanisms 140a to 140c make the flow rates of the gases supplied to the respective bubble generation tubes 136 equal.

[0096] like Figure 4As shown in FIG. 1 , when gas is supplied to each bubble generating tube 136 , bubbles are generated in the processing liquid L from each bubble generating tube 136 . Gas is ejected from the bubble generating tube 136 into the processing liquid L in the processing tank 110 , thereby generating bubbles in the processing liquid L. The bubbles generated in the processing liquid L float in the processing liquid L and reach the interface between the processing liquid L and gas (e.g., air or a specific ambient gas) in the processing tank 110 .

[0097] When bubbles float in the processing liquid L, they come into contact with the surface of the substrate W. In this case, the bubbles stir the phosphoric acid, thereby eliminating uneven silicon concentration in the phosphoric acid, thereby improving etching uniformity.

[0098] For example, the amount of bubbles generated from the end bubble generating tubes 136b is less than that generated from the central bubble generating tube 136a. Similarly, the amount of bubbles generated from the end bubble generating tubes 136c is less than that generated from the central bubble generating tube 136a.

[0099] Figure 4 (b) shows the flow F of the processing liquid L caused by the bubbles generated in the bubble generating tube 136. The processing liquid L, which reaches the interface between the processing liquid L and the gas (e.g., air or a specific ambient gas) in the processing tank 110 as the bubbles rise, flows outward in the -Y direction and outward in the +Y direction above the processing liquid L. Thereafter, the processing liquid L forms a downward flow, flowing downward along the side walls of the processing tank 110 on the outer sides in the -Y direction and the outer sides in the +Y direction.

[0100] As a result, the end bubble generating tubes 136b and 136c located at the ends of the processing tank 110 are more strongly affected by the downward flow of the processing liquid L from the top to the bottom of the processing tank 110 than the central bubble generating tube 136a located in the center of the processing tank 110. Therefore, even if the flow rate of gas supplied to the bubble generating tubes 136 is equal, the etching amount caused by the bubbles generated from the bubble generating tubes 136 may become uneven. Specifically, the amount of bubbles generated from the end bubble generating tubes 136b and 136c is less than the amount of bubbles generated from the central bubble generating tube 136a.

[0101] Next, refer to Figure 1 5 to 5 illustrate a substrate processing apparatus 100 according to this embodiment. FIG5(a) is a schematic top view of the substrate processing apparatus 100 according to this embodiment, and FIG5(b) is a schematic diagram of the substrate processing apparatus 100 according to this embodiment in which bubbles are generated by supplying gas at different flow rates to a plurality of bubble generating tubes 136.

[0102] As shown in FIG5(a), the flow control mechanism 140 controls the flow rates of the gas supplied to the bubble generating tubes 136 so that the flow rates of the gas supplied to the bubble generating tubes 136 are different. Specifically, the flow control mechanisms 140a and 140b control the flow rates of the gas flowing through the gas supply tubes 134a and 134b so that the flow rate of the gas supplied to the end bubble generating tubes 136b is greater than the flow rate of the gas supplied to the central bubble generating tube 136a. Furthermore, the flow control mechanisms 140a and 140c control the flow rates of the gas flowing through the gas supply tubes 134a and 134c so that the flow rate of the gas supplied to the end bubble generating tubes 136c is greater than the flow rate of the gas supplied to the central bubble generating tube 136a. Therefore, the flow rate of the gas supplied to the end bubble generating tubes 136b and 136c is greater than the flow rate of the gas supplied to the central bubble generating tube 136a.

[0103] As shown in FIG5(b), when gas is supplied to each bubble generating tube 136, bubbles are generated in the processing liquid L. Here, the amount of bubbles generated from the central bubble generating tube 136a, the amount of bubbles generated from the end bubble generating tube 136b, and the amount of bubbles generated from the end bubble generating tube 136c are approximately equal. Specifically, bubbles of the same size are generated in the processing liquid L at the same frequency from the central bubble generating tube 136a, the end bubble generating tube 136b, and the end bubble generating tube 136c. In this way, the flow rates of gas supplied to the central bubble generating tube 136a, the end bubble generating tube 136b, and the end bubble generating tube 136c can be made different so that the amount of bubbles generated from the central bubble generating tube 136a, the end bubble generating tube 136b, and the end bubble generating tube 136c are approximately equal.

[0104] The upper limit of the flow rate of the gas supplied to the plurality of bubble generating tubes 136 is set so that the processing liquid L in the processing tank 110 does not overflow from the processing tank. For example, the upper limit of the flow rate of the gas supplied to the bubble generating tubes 136 is set based on the volume of the processing tank 110, the amount of the processing liquid L, the temperature of the processing liquid L, etc. Furthermore, the lower limit of the flow rate of the gas supplied to the bubble generating tubes 136 is set based on whether or not bubbles are generated from the bubble generating tubes 136.

[0105] In the substrate processing apparatus 100 of this embodiment, the flow rate of gas supplied to the end bubble generating tubes 136 b and 136 c is greater than the flow rate of gas supplied to the central bubble generating tube 136 a. Therefore, the amount of bubbles generated from the central bubble generating tube 136 a, the end bubble generating tubes 136 b, and the end bubble generating tubes 136 c can be made substantially equal, thereby suppressing uneven processing of each substrate W.

[0106] in addition, Figure 2 In FIG. 5 , the bubble generating tubes 136 are arranged at equal intervals, but this embodiment is not limited to this. The intervals between the central bubble generating tubes 136a may be relatively long, while the intervals between the end bubble generating tubes 136b and 136c may be relatively short. In this case, the number of central bubble generating tubes 136a per unit area may be smaller than the number of end bubble generating tubes 136b and 136c per unit area.

[0107] Next, refer to Figure 6 A substrate processing apparatus 100 according to this embodiment will be described. Figure 6 It is a schematic diagram of the substrate processing apparatus 100 according to this embodiment.

[0108] like Figure 6 As shown, the gas supply unit 130 includes a gas supply source 132, a gas supply pipe 134, a bubble generating pipe 136, and a flow control mechanism 140. Gas is supplied to each of the bubble generating pipes 136 disposed in the processing tank 110, and bubbles are generated in the processing liquid L from each of the bubble generating pipes 136, thereby supplying bubbles to a plurality of substrates W immersed in the processing liquid L.

[0109] The bubble generating tube 136 includes a central bubble generating tube 136a, an end bubble generating tube 136b, and an end bubble generating tube 136c. In addition, the central bubble generating tube 136a, the end bubble generating tube 136b, the end bubble generating tube 136c, the gas supply tubes 134a to 134c, and the flow control mechanisms 140a to 140c are provided in plurality. Figure 6 In the figure, one of each is shown as a representative.

[0110] The gas supply pipe 134 includes a common pipe 134S and individual pipes 134T. The individual pipe 134T includes a gas supply pipe 134a, a gas supply pipe 134b, and a gas supply pipe 134c.

[0111] The common pipe 134S connects the gas supply source 132 and the individual pipes 134T. Specifically, the upstream end of the common pipe 134S is connected to the gas supply source 132. The gas supply source 132 supplies gas to the common pipe 134S. The downstream end of the common pipe 134S is connected to the upstream ends of the gas supply pipes 134a to 134c.

[0112] The downstream end of gas supply tube 134a is connected to central bubble generating tube 136a. The downstream end of gas supply tube 134b is connected to end bubble generating tube 136b. The downstream end of gas supply tube 134c is connected to end bubble generating tube 136c. Thus, gas is supplied from gas supply source 132 through common pipe 134S and gas supply tubes 134a to 134c to central bubble generating tube 136a, end bubble generating tube 136b, and end bubble generating tube 136c, respectively.

[0113] The flow rate control mechanism 140 includes a common control mechanism 140S and an individual control mechanism 140T. The individual control mechanism 140T includes a flow rate control mechanism 140a, a flow rate control mechanism 140b, and a flow rate control mechanism 140c.

[0114] The common control mechanism 140S includes a valve 141, a regulator 142, and a pressure gauge 143. These valves, regulator 142, and pressure gauge 143 are arranged on the common pipe 134S in this order, from upstream to downstream. When valve 141 is opened, gas from the gas supply source 132 flows through the common pipe 134S. The regulator 142 regulates the pressure of the gas passing through the common pipe 134S to a fixed value. The pressure gauge 143 detects the pressure in the common pipe 134S. The pressure gauge 143 is connected between the regulator 142 and the individual pipe 134T.

[0115] Flow control mechanism 140b controls the flow rate of gas supplied from gas supply source 132. The controlled gas is supplied to end bubble generation tube 136b via gas supply tube 134b. For example, flow control mechanism 140b includes an adjustment valve 145, a flow meter 146, a filter 147, and a valve 148. These valves are arranged on gas supply tube 134b in this order, from upstream to downstream.

[0116] The regulating valve 145 adjusts the flow rate of gas supplied to the end bubble generating tube 136b by adjusting its opening. "Flow rate" refers to, for example, the amount of gas passing through a unit area per unit time. Specifically, the regulating valve 145 comprises a valve body (not shown) with a valve seat internally disposed therein; a valve element that opens and closes the valve seat; and an actuator (not shown) that moves the valve element between an open and closed position.

[0117] The regulating valve 145 regulates the flow rate of the gas based on the measurement result of the flow meter 146. Alternatively, for example, the regulating valve 145 may be a regulating valve of a mass flow controller (MFC).

[0118] The flow meter 146 measures the flow rate of the gas flowing through the gas supply pipe 134b. The filter 147 filters the gas flowing through the gas supply pipe 134b.

[0119] The valve 148 opens and closes the gas supply pipe 134b. Therefore, the valve 148 switches between supplying gas from the gas supply pipe 134b to the end bubble generation pipe 136b and stopping the supply of gas.

[0120] Likewise, the flow rate control mechanism 140a controls the flow rate of the gas supplied from the gas supply source 132. Furthermore, the flow rate control mechanism 140c controls the flow rate of the gas supplied from the gas supply source 132.

[0121] Figure 6 The substrate processing apparatus 100 shown in the figure further includes a plurality of pressure gauges 149. The plurality of pressure gauges 149 include a pressure gauge 149a, a pressure gauge 149b, and a pressure gauge 149c.

[0122] The pressure gauge 149a detects the pressure of the gas in the gas supply pipe 134a. The pressure gauge 149b detects the pressure of the gas in the gas supply pipe 134b. The pressure gauge 149c detects the pressure of the gas in the gas supply pipe 134c.

[0123] The substrate processing apparatus 100 further includes a plurality of exhaust mechanisms 134o, 134p, and 134q. The exhaust mechanism 134o is connected to the gas supply pipe 134a. The exhaust mechanism 134p is connected to the gas supply pipe 134b. The exhaust mechanism 134q is connected to the gas supply pipe 134c.

[0124] Each exhaust mechanism 134o-134q exhausts gas to the outside. Specifically, each exhaust mechanism 134o-134q includes an exhaust pipe and a valve. The valve is located on the exhaust pipe. The valve opens and closes the exhaust pipe. One end of the exhaust pipe is connected to the gas supply pipe 134. Opening the valve allows gas to be discharged from the gas supply pipe 134 through the exhaust pipe to the outside.

[0125] In this way, the flow rate of the gas flowing through the gas supply pipes 134a to 134c can be appropriately controlled. Therefore, the amount of bubbles generated from the central bubble generating pipe 136a, the end bubble generating pipes 136b, and the end bubble generating pipes 136c can be appropriately controlled.

[0126] As described above, the amount of bubbles generated from the central bubble generating tube 136a, the end bubble generating tube 136b, and the end bubble generating tube 136c varies according to the flow rate of the gas flowing through the gas supply tubes 134a to 134c. When the flow control mechanisms 140a to 140c control the flow rate of the gas flowing through the gas supply tubes 134a to 134c, the control device 180 ( Figure 2) controls the flow control mechanisms 140a-140c according to values ​​pre-set in the control program. Alternatively, the control device 180 supplies gas to the substrate W to be processed and measures the flow rate or pressure of the gas flowing through the gas supply pipes 134a-134c to set the flow rate of the gas to be flowed through the gas supply pipes 134a-134c.

[0127] Next, refer to Figures 1 to 7 The substrate processing method according to this embodiment will be briefly described. Figure 7 This is a flowchart of the substrate processing method according to this embodiment.

[0128] like Figure 7 As shown, in step S102 , the substrate holding portion 120 holds the substrate W and descends into the processing tank 110 .

[0129] In step S104, the flow control mechanisms 140a to 140c control the flow rate of the gas flowing through the gas supply pipes 134a to 134c so that the flow rate of the gas supplied to each of the central bubble generating pipe 136a, the end bubble generating pipe 136b, and the end bubble generating pipe 136c is equal (flow rate equalization supply process: refer to Figure 4 ).

[0130] In step S106, the pressure of the gas in the gas supply pipes 134a to 134c is measured while the flow rates of the gas supplied to the central bubble generating pipe 136a, the end bubble generating pipe 136b, and the end bubble generating pipe 136c are equal (pressure measurement step). The pressure of the gas in the gas supply pipes 134a to 134c is an indicator of the ease of generating bubbles in the processing tank 110. For example, Figure 6 The pressure gauges 149a to 149c shown measure the pressure of the gas in the gas supply pipes 134a to 134c.

[0131] In step S108, the flow rate of gas to be flowed through the gas supply pipes 134a to 134c is obtained based on the gas pressure of each gas supply pipe 134a to 134c (flow rate obtaining step). Typically, the control device 180 obtains the flow rate of gas to be flowed through the gas supply pipes 134a to 134c based on the measurement results of the pressure gauges 149a to 149c.

[0132] In step S110, the flow control mechanisms 140a to 140c control the flow rate of gas flowing through the gas supply pipes 134a to 134c based on the acquired gas flow rate so that the flow rate of gas supplied to the central bubble generating pipe 136a, the end bubble generating pipe 136b, and the end bubble generating pipe 136c is different (uneven flow rate supply process: see Figures 5(a) and 5(b)). In this case, the flow control mechanisms 140a and 140b control the flow rate of gas flowing through the gas supply pipes 134a and 134b so that the flow rate of gas supplied to the end bubble generating pipe 136b is greater than the flow rate of gas supplied to the central bubble generating pipe 136a. Furthermore, the flow control mechanisms 140a and 140c control the flow rates of gas flowing through the gas supply pipes 134a and 134c so that the flow rate of gas supplied to the end bubble generating pipes 136c is greater than the flow rate of gas supplied to the central bubble generating pipe 136a. By varying the flow rates of gas supplied to the central bubble generating pipe 136a, the end bubble generating pipes 136b, and the end bubble generating pipes 136c, the amounts of bubbles generated from the central bubble generating pipe 136a, the end bubble generating pipes 136b, and the end bubble generating pipes 136c can be made substantially equal. As described above, even if the conditions of the substrate W, the processing environment, and the processing liquid L vary, the amounts of bubbles generated from the central bubble generating pipe 136a, the end bubble generating pipes 136b, and the end bubble generating pipes 136c can be made substantially equal, thereby suppressing uneven processing of the substrates W.

[0133] Furthermore, the substrate processing apparatus 100 and the substrate processing method of this embodiment are preferably used for manufacturing NAND devices.

[0134] Next, refer to Figures 1 to 8 The substrate processing method according to this embodiment will be briefly described. Figure 8 (a)~ Figure 8 (c) is a schematic diagram of a substrate W processed by the substrate processing method of this embodiment. Figure 8 (a)~ Figure 8 (c) is a schematic enlarged cross-sectional view of the substrate W cut along the xz cross section.

[0135] like Figure 8 As shown in (a), a substrate W includes a base material S and a layered structure M. The layered structure M is a three-dimensional layered structure in which multiple layers, including silicon nitride layers, face each other with a gap D between them. Here, the substrate W is arranged so as to extend along the xy plane. The layered structure M is disposed on the upper surface of the base material S. The layered structure M extends from the upper surface of the base material S in the Z direction. A gap D is formed in the layered structure M. Here, the gap D reaches the base material S, exposing a portion of the base material S.

[0136] The stacked structure M includes a plurality of silicon oxide layers Ma and a plurality of silicon nitride layers Ea. The silicon oxide layers Ma and the silicon nitride layers Ea are alternately stacked. The plurality of silicon oxide layers Ma and the silicon nitride layers Ea extend parallel to the upper surface of the substrate S.

[0137] like Figure 8 As shown in (b), the substrate W is processed by the processing liquid L in the substrate processing apparatus 100. For example, if the silicon nitride layer Ea of the substrate W is etched by phosphoric acid treatment, the silicon nitride layer Ea is partially removed.

[0138] like Figure 8 As shown in (c), the silicon nitride layer Ea is fully removed from the stacked structure M by further phosphoric acid treatment, and the silicon oxide layer Ma and the silicon nitride layer Ea remain in the stacked structure M, which are not etched by the treatment liquid L. The silicon nitride layer Ea is etched from the substrate W by the phosphoric acid treatment in this manner.

[0139] At this time, if bubbles are generated in the processing liquid L so as to contact the entire surface of the substrate W, the bubbles promote replacement of the processing liquid L on the surface of the substrate W. Therefore, uneven processing of each substrate W can be suppressed.

[0140] In addition, Figures 2 to 7 In the substrate processing apparatus 100 shown, the bubble generating tube 136 extends across the entire surface of the substrate W, and bubbles are supplied to the entire surface of the substrate W, but the present embodiment is not limited thereto. The bubble generating tube 136 may be shorter than the length of the substrate W in the X direction. Figures 2 to 7 In the illustrated substrate processing apparatus 100 , the flow rate control mechanisms 140 a to 140 c control the flow rates of gases supplied to the central bubble generating tube 136 a , the end bubble generating tubes 136 b , and the end bubble generating tubes 136 c , respectively. However, the present embodiment is not limited thereto.

[0141] Next, refer to Figures 1 to 10 A substrate processing apparatus 100 according to this embodiment will be described. Figure 9 、 Figure 10 (a) and Figure 10 (b) is a schematic plan view of the substrate processing apparatus 100 according to this embodiment.

[0142] like Figure 9 As shown, a plurality of bubble generating tubes 136 are disposed in the processing tank 110. The bubble generating tubes 136 include a central bubble generating tube 136a disposed below the substrates W in the central region A; an end bubble generating tube 136b disposed below the substrates W in the end region B; and an end bubble generating tube 136c disposed below the substrates W in the end region C.

[0143] Here, the central region A is divided into region A1 located on the -X direction side and region A2 located on the +X direction side. Furthermore, the end region B is divided into region B1 located on the -X direction side and region B2 located on the +X direction side. Similarly, the end region C is divided into region C1 located on the -X direction side and region C2 located on the +X direction side.

[0144] The central bubble generating tube 136a includes a central bubble generating tube 136a1 located in area A1 and a central bubble generating tube 136a2 located in area A2. The central bubble generating tubes 136a1 and 136a2 are arranged in a straight line. The central bubble generating tube 136a1 is an example of a first central pipe, and the central bubble generating tube 136a2 is an example of a second central pipe.

[0145] The end bubble generating tube 136b includes an end bubble generating tube 136b1 located in area B1 and an end bubble generating tube 136b2 located in area B2. The end bubble generating tubes 136b1 and 136b2 are arranged in a straight line. Similarly, the end bubble generating tube 136c includes an end bubble generating tube 136c1 located in area C1 and an end bubble generating tube 136c2 located in area C2. The end bubble generating tubes 136c1 and 136c2 are arranged in a straight line. The end bubble generating tubes 136b1 and 136c1 are examples of first end pipes, and the end bubble generating tubes 136b2 and 136c2 are examples of second end pipes.

[0146] Therefore, the end bubble generating tube 136b1, the central bubble generating tube 136a1, and the end bubble generating tube 136c1 are arranged in this order from the -Y direction side to the +Y direction side at equal intervals on the -X direction side of the processing tank 110. Furthermore, the end bubble generating tube 136b2, the central bubble generating tube 136a2, and the end bubble generating tube 136c2 are arranged in this order from the -Y direction side to the +Y direction side at equal intervals on the +X direction side of the processing tank 110.

[0147] In this specification, the gas supply pipes 134 connected to the central bubble generating pipes 136a1 and 136a2, respectively, may be referred to as gas supply pipes 134a1 and 134a2. Similarly, the gas supply pipes 134 connected to the end bubble generating pipes 136b1 and 136b2 may be referred to as gas supply pipes 134b1 and 134b2, and the gas supply pipes 134 connected to the end bubble generating pipes 136c1 and 136c2 may be referred to as gas supply pipes 134c1 and 134c2.

[0148] Figure 9In the substrate processing apparatus 100 shown, the gas supply pipes 134a1, 134b1, and 134c1 are connected to the gas supply source 132, the central bubble generating pipe 136a1, the end bubble generating pipe 136b1, and the end bubble generating pipe 136b1, respectively. In addition, the gas supply pipes 134a2, 134b2, and 134c2 are connected to the gas supply source 132, the central bubble generating pipe 136a2, the end bubble generating pipe 136b2, and the end bubble generating pipe 136b2, respectively. Figure 9 In FIG. 1 , two gas supply sources 132 are shown on the +X direction side and the −X direction side with respect to the processing tank 110 , but the gas supply source 132 may be a single supply source.

[0149] In this specification, the flow control mechanism 140 that controls the flow rate of gas supplied to the gas supply pipes 134a1 and 134a2 may be referred to as flow control mechanism 140a1 and 140a2. Similarly, when there are multiple flow control mechanisms 140, the flow control mechanism 140 that controls the flow rate of gas supplied to the gas supply pipes 134b1 and 134b2 may be referred to as flow control mechanism 140b1 and 140b2, and the flow control mechanism 140 that controls the flow rate of gas supplied to the gas supply pipes 134c1 and 134c2 may be referred to as flow control mechanism 140c1 and 140c2.

[0150] The gas whose flow rate is controlled by the flow control mechanism 140a1 is supplied to the central bubble generating tube 136a1 via the gas supply tube 134a1. Furthermore, the gas whose flow rate is controlled by the flow control mechanism 140a2 is supplied to the central bubble generating tube 136a2 via the gas supply tube 134a2. Similarly, the gas whose flow rate is controlled by the flow control mechanisms 140b1 to 140c2 is supplied to the end bubble generating tubes 136b1 to 136c2 via the gas supply tubes 134b1 to 134c2.

[0151] Here, the two bubble generating tubes are arranged in a straight line along the X direction. In a plan view, the boundary between the two bubble generating tubes arranged in a straight line is located between two adjacent substrates W. For example, the end bubble generating tube 136b1 and the end bubble generating tube 136b2 are arranged in a straight line.

[0152] In the substrate processing apparatus 100 of this embodiment, different flow rates of gas can be supplied to the central bubble generating tubes 136a1 and 136a1 located in the central region A and the end bubble generating tubes 136b1, 136b2, 136c1, and 136c2 located in the end regions B and C for each of the plurality of substrates W arranged along the Y direction. Consequently, bubbles can be generated substantially evenly for each substrate W, thereby suppressing uneven processing of each substrate W.

[0153] Furthermore, when gas is supplied from the gas supply pipes 134a1 to 134c2 to each bubble generating tube 136, the flow rate in the upstream portion of the bubble generating tube 136 may be higher than the flow rate in the downstream portion. For example, the flow rate in the upstream portion of the central bubble generating tube 136a1, located in the -X direction, may be higher than the flow rate in the downstream portion, while the flow rate in the upstream portion of the central bubble generating tube 136a2, located in the +X direction, may be higher than the flow rate in the downstream portion. In this case, the substrate processing apparatus 100 of this embodiment supplies gas to substrates W arranged along the Y direction, using the bubble generating tubes 136 located in the -X direction and the bubble generating tubes 136 located in the +X direction. This allows more gas to be supplied to the peripheral area of ​​a single substrate W than to the central area. In this case, even when a flow of processing liquid is generated in the in-plane direction of the substrate W, bubbles can be generated uniformly in the in-plane direction of the substrate W, thereby suppressing uneven processing within the substrate W.

[0154] in addition, Figures 1 to 9 In the substrate processing apparatus 100 shown, flow rate control mechanisms 140 are provided corresponding to the bubble generating tubes 136 , but the present embodiment is not limited thereto. A single flow rate control mechanism 140 may control the flow rate of gas supplied to a plurality of bubble generating tubes 136 .

[0155] like Figure 10 As shown in (a), a plurality of bubble generating tubes 136 extending in the X direction are arranged in the processing tank 110. The end bubble generating tube 136b, the center bubble generating tube 136a, and the end bubble generating tube 136c are arranged in order at equal intervals from the -Y direction side to the +Y direction side.

[0156] The gas supply pipe 134 includes common pipes 134s, 134t, and 134u, and gas supply pipes 134a, 134b, and 134c. Here, multiple central bubble generating pipes 136a are connected to a common flow control mechanism 140a via multiple gas supply pipes 134a. Multiple end bubble generating pipes 136b are connected to a common flow control mechanism 140b via multiple gas supply pipes 134b. Similarly, multiple end bubble generating pipes 136c are connected to a common flow control mechanism 140c via multiple gas supply pipes 134c.

[0157] The common pipe 134s connects the gas supply source 132 and the flow control mechanism 140a. The common pipe 134t connects the gas supply source 132 and the flow control mechanism 140b. The common pipe 134u connects the gas supply source 132 and the flow control mechanism 140c.

[0158] The gas supply source 132 supplies gas, whose flow rate is controlled by a common flow control mechanism 140a, to the plurality of central bubble generating tubes 136a through the gas supply pipe 134a. The gas supply source 132 supplies gas, whose flow rate is controlled by a common flow control mechanism 140b, to the plurality of end bubble generating tubes 136b through the gas supply pipe 134b. Furthermore, the gas supply source 132 supplies gas, whose flow rate is controlled by a common flow control mechanism 140c, to the plurality of end bubble generating tubes 136c through the gas supply pipe 134c.

[0159] Therefore, a flow rate controlled by the flow control mechanism 140a is supplied to the central bubble generating tube 136a. Furthermore, flow rates controlled by the flow control mechanisms 140b and 140c are supplied to the end bubble generating tubes 136b and 136c. As a result, the flow rate of gas supplied to the end bubble generating tubes 136b and 136c below the substrates W in the end regions B and C is greater than the flow rate of gas supplied to the central bubble generating tube 136a below the substrates W in the central region A. This ensures that the amount of bubbles generated from the end bubble generating tubes 136b, 136a, and 136c is approximately equal, thereby reducing uneven processing of each substrate W.

[0160] In addition, refer to Figure 9 In the substrate processing apparatus 100, two bubble generating tubes 136 are arranged in a straight line along the X direction. Figure 10 In the substrate processing apparatus 100 described in (a), a common flow rate control mechanism 140a-140c is provided in each of the central area A, the end area B, and the end area C. However, this embodiment is not limited to this. Alternatively, two bubble generating tubes 136 may be arranged linearly along the X direction, and a common flow rate control mechanism 140 may be provided in each of the areas A1-C2.

[0161] like Figure 10 As shown in FIG. 1B , the gas supply pipe 134 includes common pipes 134s1, 134s2, 134t1, 134t2, 134u1, and 134u2, and gas supply pipes 134a1, 134a2, 134b1, 134b2, 134c1, and 134c2. The gas supply source 132 is connected to the flow control mechanism 140a1 via the common pipe 134s1. The gas supply source 132 is connected to the flow control mechanism 140b1 via the common pipe 134t1, and is also connected to the flow control mechanism 140c1 via the common pipe 134u1.

[0162] Similarly, the gas supply source 132 is connected to the flow control mechanism 140a2 via the common pipe 134s2, the gas supply source 132 is connected to the flow control mechanism 140b2 via the common pipe 134t2, and is connected to the flow control mechanism 140c2 via the common pipe 134u2.

[0163] As described above, the gas whose flow rate is controlled by the flow control mechanism 140a1 is supplied to the central bubble generating tube 136a1 via the gas supply tube 134a1. Furthermore, the gas whose flow rate is controlled by the flow control mechanism 140a2 is supplied to the central bubble generating tube 136a2 via the gas supply tube 134a2. Similarly, the gas whose flow rate is controlled by the flow control mechanisms 140b1 to 140c2 is supplied to the end bubble generating tubes 136b1 to 136c2 via the gas supply tubes 134b1 to 134c2.

[0164] In addition, refer to Figures 1 to 10 In the above description, gas is supplied to the substrate W from below the processing liquid L stored in the processing tank 110. However, this embodiment is not limited to this. Not only gas but also liquid may be supplied to the substrate W from below the processing liquid L stored in the processing tank 110.

[0165] Next, refer to Figures 1 to 11 A substrate processing apparatus 100 according to this embodiment will be described. Figure 11 It is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. Figure 11 The substrate processing apparatus 100 shown in FIG. 1 has the same features as those of the reference substrate processing apparatus 100 except that the liquid supply unit 150 is further provided. Figure 2 The aforementioned substrate processing apparatus 100 has the same structure, and repeated description thereof will be omitted to avoid redundancy.

[0166] like Figure 11 As shown, the substrate processing apparatus 100 further includes a liquid supply unit 150. The liquid supply unit 150 supplies liquid to the processing tank 110. Typically, the liquid supply unit 150 supplies the processing liquid L to the processing tank 110. In this case, the liquid supply unit 150 preferably supplies the liquid to the processing liquid L in the processing tank 110 from a lower position upward. As an example, the liquid may be the same type of processing liquid L as the processing liquid L stored in the processing tank 110.

[0167] Even when the liquid supply unit 150 supplies processing liquid L, the upwardly supplied processing liquid pushes out the portion of the substrate W in contact with the liquid while moving upward on the surface of the substrate W. As the upwardly supplied processing liquid passes through, fresh processing liquid L in the surrounding area enters. In this manner, the upwardly supplied processing liquid contacts the surface of the substrate W, thereby agitating the surface of the substrate W and replacing the processing liquid L on the substrate W with fresh processing liquid. Consequently, the processing speed of the substrate W can be increased.

[0168] The liquid supply unit 150 includes a liquid supply source 152, a liquid supply pipe 154, and a liquid discharge pipe 156. Liquid is supplied from the liquid supply source 152. The liquid supply source 152 is disposed outside the processing tank 110. Furthermore, the liquid supply source 152 can circulate the liquid once used as the processing liquid L within the processing tank 110. The liquid discharge pipe 156 extends in the Y direction. Here, the liquid discharge pipe 156 extends perpendicularly to the bubble generating pipe 136.

[0169] The liquid supply pipe 154 connects the liquid supply source 152 and the liquid discharge pipe 156. The liquid supplied from the liquid supply source 152 flows through the liquid supply pipe 154 to the liquid discharge pipe 156. At least a portion of the liquid supply pipe 154 is disposed outside the treatment tank 110.

[0170] The liquid discharge pipe 156 is disposed within the processing tank 110. Typically, the liquid discharge pipe 156 is disposed on the bottom surface of the processing tank 110. The liquid discharge pipe 156 may also be disposed vertically above the bubble generating pipe 136. Alternatively, the liquid discharge pipe 156 may be disposed vertically below the bubble generating pipe 136. The liquid discharge pipe 156 extends in the Y direction. Therefore, when viewed from above, the liquid discharge pipe 156 and the bubble generating pipe 136 are perpendicular to each other.

[0171] Next, refer to Figures 1 to 13 A substrate processing apparatus 100 according to this embodiment will be described. Figure 12 (a) is a schematic side view of the substrate processing apparatus 100 according to this embodiment. Figure 12 (b) is a schematic top view of the substrate processing apparatus 100 . Figure 13 is a schematic diagram of the substrate processing apparatus 100 . Figure 12 (a) and Figure 12 The substrate processing apparatus 100 shown in (b) has the same characteristics as the reference except that it further includes a liquid supply unit 150. Figure 3 (a) and Figure 4 The aforementioned substrate processing apparatus 100 has the same structure, and repeated description is omitted to avoid redundancy. Figure 13A virtual center line CL passing through the center of the substrate W and extending in the vertical direction is shown in FIG.

[0172] like Figure 12 (a) and Figure 12 As shown in (b), the liquid discharge pipe 156 includes a liquid discharge pipe 156a and a liquid discharge pipe 156b. The liquid discharge pipe 156a and the liquid discharge pipe 156b extend parallel to each other. The liquid discharge pipe 156a and the liquid discharge pipe 156b extend in the Y direction. The liquid discharge pipe 156a and the liquid discharge pipe 156b are arranged in order from the -X direction to the +X direction.

[0173] Each of the liquid discharge tubes 156a and 156b is provided with a plurality of openings 156p. In the liquid discharge tube 156, the plurality of openings 156p are arranged in a row. The spacing between the plurality of openings 156p is approximately equal to the spacing between the substrates W. The plurality of openings 156p are located between the substrates W arranged along the arrangement direction. The liquid discharge tubes 156a and 156b have the same structure. In this specification, the liquid discharge tubes 156a and 156b are sometimes collectively referred to as the liquid discharge tube 156.

[0174] Liquid is supplied from the liquid supply source 152 through the liquid supply pipe 154a to the liquid discharge pipe 156a. In addition, liquid is supplied from the liquid supply source 152 through the liquid supply pipe 154b to the liquid discharge pipe 156b.

[0175] The liquid discharge pipe 156 discharges the treatment liquid L from the plurality of openings 156p into the treatment tank 110. In this case, the plurality of openings 156p preferably face upward from below relative to the treatment liquid L in the treatment tank 110. The plurality of openings 156p have equal sizes and intervals.

[0176] like Figure 13 As shown, a bubble generating tube 136 and liquid ejecting tubes 156a and 156b are disposed in the processing tank 110. The opening 136p of the bubble generating tube 136 is provided at the upper portion of the bubble generating tube 136 so that the ejection direction thereof is along the vertical direction.

[0177] On the other hand, the openings 156p of the liquid discharge pipes 156a and 156b are arranged at an inclined position relative to the vertical direction (Z direction) so that the discharge direction thereof is directed toward the center of the substrate W. Therefore, when the liquid discharged obliquely upward from the opening 156p of the liquid discharge pipe 156a merges with the liquid flow discharged obliquely upward from the opening 156p of the liquid discharge pipe 156b, a very strong upward upward flow is formed within the processing tank 110.

[0178] In the substrate processing apparatus 100 of this embodiment, the gas flow rate supplied to the end bubble generating tubes 136b and 136c located in the end regions B and C is greater than the gas flow rate supplied to the central bubble generating tube 136a located in the central region A. Therefore, the amount of bubbles generated from the central bubble generating tube 136a, the end bubble generating tubes 136b, and the end bubble generating tubes 136c can be made approximately equal. In particular, when an upward flow is formed, the bubble flow and the substrate processing speed are increased. Even when processing substrates at such a high speed, uneven processing of each substrate W can be suppressed.

[0179] Next, refer to Figures 1 to 14 A substrate processing apparatus 100 according to this embodiment will be described. Figure 14 It is a schematic diagram of the substrate processing apparatus 100 according to this embodiment.

[0180] like Figure 14 As shown, the processing tank 110 has a double-layered structure, comprising an inner tank 112 and an outer tank 114. Each of the inner tank 112 and the outer tank 114 has an upwardly opening. The inner tank 112 is configured to store a processing liquid L and accommodate multiple substrates W. The outer tank 114 is disposed on the outer peripheral surface of the upper opening of the inner tank 112.

[0181] The substrate processing apparatus 100 further includes a flow rate adjustment mechanism 160 . The flow rate adjustment mechanism 160 is used to circulate the processing liquid L. The flow rate adjustment mechanism 160 circulates the processing liquid L stored in the processing tank 110 during substrate processing and supplies the processing liquid L to each liquid discharge pipe 156 .

[0182] The flow rate adjustment mechanism 160 includes a pipe 161, a pump 162, a heater 163, a filter 164, an adjustment valve 165, and a valve 166. The pump 162, the heater 163, the filter 164, the adjustment valve 165, and the valve 166 are arranged in this order from upstream to downstream of the pipe 161.

[0183] The pipe 161 guides the processing liquid L discharged from the processing tank 110 back to the processing tank 110. To the downstream end of the pipe 161, a plurality of liquid discharge pipes 156 are connected.

[0184] A pump 162 delivers the treatment liquid L from the pipe 161 to the plurality of liquid discharge pipes 156. The liquid discharge pipes 156 thus supply the treatment liquid L supplied from the pipe 161 to the treatment tank 110. A heater 163 heats the treatment liquid L flowing through the pipe 161. The heater 163 adjusts the temperature of the treatment liquid L. A filter 164 filters the treatment liquid L flowing through the pipe 161.

[0185] Adjustment valve 165 regulates the opening of piping 161 to adjust the flow rate of treatment liquid L supplied to the multiple liquid discharge pipes 156. Specifically, adjustment valve 165 includes a valve body (not shown) with a valve seat internally disposed therein; a valve element that opens and closes the valve seat; and an actuator (not shown) that moves the valve element between an open position and a closed position. Valve 166 opens and closes piping 161.

[0186] The plurality of liquid discharge pipes 156 supply the treatment liquid L to the inner tank 112 of the treatment tank 110. The plurality of liquid discharge pipes 156 are arranged at the bottom of the inner tank 112 inside the inner tank 112 of the treatment tank 110. Each of the plurality of liquid discharge pipes 156 has a substantially cylindrical shape.

[0187] Specifically, each of the plurality of liquid ejection tubes 156 has a plurality of openings 156 p . Figure 14 In FIG. 1 , only one opening 156 p is shown for one liquid discharge tube 156. Each of the plurality of liquid discharge tubes 156 supplies the processing liquid L to the inner tank 112 through the plurality of openings 156 p.

[0188] The substrate processing apparatus 100 further includes a processing liquid supply unit 150A and a dilution liquid supply unit 150B. The processing liquid supply unit 150A supplies processing liquid L to the processing tank 110. The processing liquid L can be, for example, a solution of approximately 85% by mass phosphoric acid (H3PO4) and approximately 15% by mass water (deionized water).

[0189] The processing liquid supply unit 150A includes a nozzle 152A, a pipe 154A, and a valve 156A. The nozzle 152A sprays the processing liquid L into the inner tank 112. The nozzle 152A is connected to the pipe 154A. The processing liquid L is supplied from the processing liquid supply source TKA to the pipe 154A. The pipe 154A is provided with a valve 156A. When the valve 156A is opened, the processing liquid L sprayed from the nozzle 152A is supplied into the inner tank 112.

[0190] The diluent supply unit 150B supplies the diluent to the treatment tank 110. The diluent supply unit 150B includes a nozzle 152B, a pipe 154B, and a valve 156B. The nozzle 152B sprays the diluent into the outer tank 114. The nozzle 152B is connected to the pipe 154B. The diluent supplied to the pipe 154B can be any one of DIW (deionized water), carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10ppm to 100ppm). The diluent from the diluent supply source TKB is supplied to the pipe 154B. A valve 156B is provided on the pipe 154B. When the valve 156B is opened, the diluent sprayed from the nozzle 152B is supplied to the outer tank 114.

[0191] The substrate processing apparatus 100 further includes a drain unit 170 . The drain unit 170 drains the processing liquid L from the processing tank 110 .

[0192] The drain section 170 includes a drain pipe 170a and a valve 170b. The bottom wall of the inner tank 112 of the treatment tank 110 is connected to the drain pipe 170a. A valve 170b is provided on the drain pipe 170a. By opening the valve 170b, the treated liquid L stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The discharged treated liquid L is then sent to a wastewater treatment device (not shown) for treatment.

[0193] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the embodiments and can be implemented in various ways without departing from the scope of the present invention. In addition, various inventions can be formed by appropriately combining the multiple components disclosed in the embodiments. For example, some components can be deleted from all the components shown in the embodiments. Furthermore, the components in different embodiments can also be appropriately combined. In order to facilitate understanding of the drawings, each component is schematically represented as the main body, and the thickness, length, number, spacing, etc. of each component shown in the drawings may be different from the real thing for the convenience of making the drawings. In addition, the material, shape, size, etc. of each component shown in the embodiments are only examples and are not particularly limited. Various changes can be made without substantially departing from the scope of the effect of the present invention.

[0194] For example, refer to Figures 1 to 14 In the above description, the bubble generating tubes 136 extend in a direction perpendicular to the normal direction (Y direction) of the main surface of the substrate W. However, this embodiment is not limited to this. Preferably, different bubble generating tubes 136 are arranged below the center region and end regions of a substrate array including multiple substrates W.

[0195] [Industrial Applicability]

[0196] The present invention is preferably used in a substrate processing apparatus and a substrate processing method.

[0197] [Explanation of Symbols]

[0198] 100 Substrate processing equipment

[0199] 110 Processing Tanks

[0200] 120 substrate holding portion

[0201] 130 Gas supply unit

[0202] 150 Liquid supply unit

[0203] 180 Control Device

[0204] 200 Gas supply unit

[0205] W substrate

[0206] L treatment fluid.

Claims

1. A substrate processing apparatus comprising: a substrate holding portion for holding a plurality of substrates arranged in a substrate row aligned in a row direction; a processing tank storing a processing liquid for immersing the substrate held by the substrate holding portion; a plurality of bubble generating tubes for generating bubbles in the treatment liquid by supplying gas to the treatment liquid; a plurality of gas supply pipes connected to the plurality of bubble generating pipes; a flow control mechanism for controlling the flow of gas flowing through the plurality of gas supply pipes; a pressure gauge for measuring the pressure of gas flowing through a gas supply tube connected to an end bubble generating tube located below an end portion of the substrate array immersed in the processing liquid, and a pressure gauge for measuring the pressure of gas flowing through a gas supply tube connected to a central bubble generating tube located below a central portion of the substrate array, among the plurality of bubble generating tubes; and A control unit, configured to control the flow control mechanism; The control unit controls the flow control mechanism based on the pressure of the gas flowing through the gas supply tube connected to the end bubble generating tube and the pressure of the gas flowing through the gas supply tube connected to the central bubble generating tube measured by the pressure gauge, so as to control the flow rate of the gas flowing through the multiple gas supply tubes in such a way that the flow rate of the gas supplied to the end bubble generating tubes is greater than the flow rate of the gas supplied to the central bubble generating tube.

2. The substrate processing apparatus according to claim 1, wherein The plurality of bubble generating tubes extend perpendicularly to a normal direction of the main surface of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, wherein The number of the central bubble generating tubes per unit area is smaller than the number of the end bubble generating tubes per unit area.

4. The substrate processing apparatus according to claim 1 or 2, further comprising: a storage unit for storing a control program; The control unit controls the flow control mechanism according to the control program.

5. The substrate processing apparatus according to claim 1 or 2, wherein The central bubble generating tube comprises: a first central pipe disposed below one side in a horizontal direction relative to the substrate; and a central second pipe separated from the central first pipe and arranged in a straight line with the central first pipe below the other side in the horizontal direction relative to the substrate; The end bubble generating tube comprises: a first end pipe disposed below one side in a horizontal direction relative to the substrate; and The second end pipe is separated from the first end pipe and is arranged in a straight line with the first end pipe below the other side in the horizontal direction with respect to the substrate. 6 . The substrate processing apparatus according to claim 1 , further comprising a liquid discharge pipe, wherein the liquid discharge pipe is disposed in the processing tank.

7. The substrate processing apparatus according to claim 6, wherein The liquid ejection tube is arranged so as to extend parallel to a normal direction of the main surface of the substrate.

8. The substrate processing apparatus according to claim 1 or 2, wherein The treatment liquid includes a phosphoric acid solution.

9. A substrate processing method, comprising: a dipping step of dipping a plurality of substrates arranged in a row in a row direction into a treatment liquid stored in a treatment tank; and a bubble supplying step of generating bubbles in the processing liquid by supplying gas to a plurality of bubble generating tubes arranged in the processing tank, and supplying the bubbles to a substrate immersed in the processing liquid; The bubble supplying process includes: a pressure measuring step of measuring the pressure of gas flowing through a gas supply tube connected to an end bubble generating tube located below an end portion of the substrate array, and a pressure of gas flowing through a gas supply tube connected to a central bubble generating tube located below a central portion of the substrate array; The uneven flow rate supply step increases the flow rate of the gas supplied to the end bubble generating tubes relative to the flow rate of the gas supplied to the central bubble generating tube based on the measurement result of the pressure measuring step.

10. The substrate processing method according to claim 9, wherein The plurality of bubble generating tubes extend perpendicularly to a normal direction of the main surface of the substrate.

11. The substrate processing method according to claim 9 or 10, wherein The bubble supplying step further comprises: an equal flow supply step of supplying gas to the end bubble generating tube and the central bubble generating tube at equal flow rates; and The pressure measuring step measures the pressure of the gas flowing through the gas supply pipe connected to the end bubble generating pipe and the pressure of the gas flowing through the gas supply pipe connected to the center bubble generating pipe in the equal flow rate supply step; The uneven flow supply step sets the flow rate of gas flowing through the gas supply tube connected to the end bubble generating tube and the flow rate of gas supplied to the gas supply tube connected to the center bubble generating tube based on the measurement result of the pressure measuring step.

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