A method of manufacturing a semiconductor device

Abstract

The application provides a semiconductor device preparation method, which comprises the following steps: removing polyimide used for fixing a first carrier and a wafer; transferring the wafer from the first carrier to a second carrier; performing a metal plating process on the back surface of the wafer; attaching the back surface of the wafer to a cutting mold frame; and cutting the wafer on the front surface of the wafer by using etching and laser processes. According to the semiconductor device preparation method, the preparation process of the front surface elements of the wafer can be completed in the first carrier, then the wafer can be transferred to the second carrier, and the metal plating process of the back surface of the wafer can be performed. When the wafer is transferred to the second carrier, the polyimide layer on the front surface of the wafer can play a buffering protection role of the wafer, the metal plating process of the back surface of the wafer can be completed under the support of the second carrier, then the back surface of the wafer is attached to the cutting mold frame, and the wafer is cut from the front surface, so that the preparation method is reasonable and efficient, and the preparation efficiency and processing quality of the wafer are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a preparation method of semiconductor device. BACKGROUND

[0002] In the wafer processing preparation process, the front and back surfaces of the wafer are involved in surface component processing, and the wafer needs to be fixed and supported during processing. How to reasonably design the wafer preparation process affects the wafer preparation efficiency and processing quality. SUMMARY

[0003] The technical problem to be solved by the present application is how to improve the wafer preparation efficiency and quality. The present application provides a preparation method of semiconductor device.

[0004] The preparation method of semiconductor device according to the embodiment of the present application comprises:

[0005] Removing the polyimide used for fixing the first carrier disc and the wafer;

[0006] Transferring the wafer from the first carrier disc to a second carrier disc;

[0007] Performing a metal plating process on the back surface of the wafer;

[0008] Attaching the back surface of the wafer to a cutting mold frame;

[0009] Cutting the wafer from the front surface using etching and laser processes.

[0010] The preparation method of semiconductor device according to the embodiment of the present application can complete the wafer front surface component preparation process in the first carrier disc, and then the wafer can be transferred to the second carrier disc for metal plating process on the back surface of the wafer. When the wafer is transferred to the second carrier disc, the polyimide layer on the front surface of the wafer can play a buffering and protective role for the wafer. The metal plating process on the back surface of the wafer is completed under the support of the second carrier disc, and then the back surface of the wafer is attached to the cutting mold frame for cutting from the front surface of the wafer. The preparation method is reasonable and efficient, and improves the wafer preparation efficiency and processing quality.

[0011] According to some embodiments of the present application, the polyimide used for fixing the first carrier disc and the wafer is removed by laser or plasma.

[0012] In some embodiments of the present application, transferring the wafer from the first carrier disc to the second carrier disc comprises:

[0013] Buckling the second carrier disc above the first carrier disc;

[0014] turning over the first carrier plate and the second carrier plate after the first carrier plate and the second carrier plate are buckled, so that the wafer is transferred to the second carrier plate under the action of gravity and polyimide adhesion;

[0015] removing the first carrier plate.

[0016] According to some embodiments of the present application, before the wafer is transferred from the first carrier plate to the second carrier plate, the wafer completes a front-side component preparation process.

[0017] In some embodiments of the present application, when a back-side metal plating process is performed on the wafer, a ring-shaped limiting frame is used to define a region to be plated on the back side of the wafer.

[0018] According to some embodiments of the present application, the front side of the wafer has a cutting path defined by a polyimide layer, and when the wafer is cut on the front side by using etching and laser processes, the wafer is cut according to the cutting path.

[0019] In some embodiments of the present application, when the wafer is cut on the front side by using etching and laser processes, the following steps are included:

[0020] cutting the interlayer dielectric and the silicon-based body of the wafer by using an etching process;

[0021] cutting the metal plating by using a laser process.

[0022] According to some embodiments of the present application, the metal plating is a composite metal layer composed of at least one or more of titanium, nickel-vanadium alloy and silver.

[0023] In some embodiments of the present application, the first carrier plate and the second carrier plate are provided with through holes at the bottom.

[0024] According to some embodiments of the present application, the preparation method further includes:

[0025] packaging the cut wafer. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 a flowchart of a preparation method of a semiconductor device according to an embodiment of the present application;

[0027] Figure 2 a schematic diagram of a wafer completing a front-side component process in a preparation method of a semiconductor device according to an embodiment of the present application;

[0028] Figure 3 a schematic diagram of removing polyimide used for fixing a first carrier plate and a wafer in a preparation method of a semiconductor device according to an embodiment of the present application;

[0029] Figure 4This is a schematic diagram showing the second carrier disk being fastened to the top of the first carrier disk in a method for fabricating a semiconductor device according to an embodiment of the present invention;

[0030] Figure 5 This is a schematic diagram of the flipping and removing of the first carrier disk in a method for fabricating a semiconductor device according to an embodiment of the present invention;

[0031] Figure 6 This is a schematic diagram illustrating the metal coating process on the back side of a wafer in a semiconductor device fabrication method according to an embodiment of the present invention.

[0032] Figure 7 This is a schematic diagram of the back side of a wafer being attached to a dicing mold frame in a method for fabricating a semiconductor device according to an embodiment of the present invention;

[0033] Figure 8 This is a schematic diagram illustrating the removal of the second carrier disk in a method for fabricating a semiconductor device according to an embodiment of the present invention.

[0034] Figure 9 This is a schematic diagram of a silicon-based substrate cut by etching process in the fabrication method of a semiconductor device according to an embodiment of the present invention;

[0035] Figure 10 This is a schematic diagram illustrating the laser cutting of the metal coating in a semiconductor device fabrication method according to an embodiment of the present invention.

[0036] Figure label:

[0037] Wafer 10, front side 110, back side 120, polyimide layer 101, interlayer dielectric 102, metal block 103, metal layer 104, dicing track S1, metal coating 105, sealing region S2.

[0038] First carrier disk 210, second carrier disk 220

[0039] Cut the mold frame 30. Detailed Implementation

[0040] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.

[0041] The steps described in the specification and the flowcharts in the accompanying drawings of this invention are not necessarily to be strictly followed according to the step numbers; the execution order of the steps can be changed. Furthermore, certain steps can be omitted, multiple steps can be combined into one step, and / or one step can be broken down into multiple steps.

[0042] like Figure 1 As shown, a method for fabricating a semiconductor device according to an embodiment of the present invention includes:

[0043] S100, removing the polyimide used for fixing the first carrier and the wafer;

[0044] It should be noted that, as shown in Figure 2 Before removing the polyimide used for fixing the first carrier 210 and the wafer 10, the preparation of the front surface 110 elements of the wafer 10 can be completed, including the preparation of the interlayer dielectric 102 (ILD), the metal block 103, the metal layer 104, and the polyimide layer 101.

[0045] S200, transferring the wafer from the first carrier to the second carrier;

[0046] S300, performing a metal plating process on the back surface of the wafer;

[0047] S400, attaching the back surface of the wafer to the cutting mold frame;

[0048] S500, cutting the wafer on the front surface of the wafer using etching and laser processes.

[0049] According to the preparation method of the semiconductor device provided in the embodiments of the present application, the preparation process of the front surface 110 elements of the wafer 10 can be completed in the first carrier 210, and then the wafer 10 can be transferred to the second carrier 220 to perform the metal plating 105 process on the back surface 120 of the wafer 10. When the wafer 10 is transferred to the second carrier 220, the polyimide layer 101 on the front surface 110 of the wafer 10 can serve as a buffer to protect the wafer 10, and the metal plating 105 process on the back surface 120 of the wafer 10 can be completed under the support of the second carrier 220. Then, the back surface 120 of the wafer 10 is attached to the cutting mold frame 30, and the cutting is performed from the front surface 110 of the wafer 10. The preparation method is reasonable and efficient, and the preparation efficiency and processing quality of the wafer 10 are improved.

[0050] According to some embodiments of the present application, in step S100, the polyimide used for fixing the first carrier and the wafer is removed by laser or plasma. That is, the polyimide can be removed by laser, or the polyimide can be removed by plasma solvent. As shown in Figure 2 and Figure 3 When the polyimide is removed, only the polyimide in the sealing area S2 part between the wafer 10 and the first carrier 210 is removed.

[0051] In some embodiments of the present application, as shown in Figures 4-5 In step S200, the wafer is transferred from the first carrier to the second carrier, including:

[0052] S210, buckling the second carrier above the first carrier;

[0053] S220, flip the first carrier and the second carrier after buckling, so that the wafer is transferred to the second carrier under the action of gravity and polyimide adhesion;

[0054] It should be noted that when the first carrier 210 and the second carrier 220 are flipped, the polyimide layer 101 of the front surface 110 of the wafer 10 can play a role in buffering and protecting the wafer 10, and the polyimide layer 101 has a certain adhesion, which can facilitate the transfer of the wafer 10 from the first carrier 210 to the second carrier 220 under the action of gravity of the wafer 10.

[0055] S230, remove the first carrier.

[0056] According to some embodiments of the present application, as shown in Figure 1 Before the wafer 10 is transferred from the first carrier 210 to the second carrier 220, the wafer 10 completes the preparation process of the elements on the front surface 110. Therefore, after the wafer 10 is transferred to the second carrier 220, only the back surface 120 of the wafer 10 needs to be plated with metal film 105.

[0057] In some embodiments of the present application, when the back surface 120 of the wafer 10 is plated with metal film 105, a ring-shaped limiting frame is used to define the to-be-plated area of the back surface 120 of the wafer 10.

[0058] It should be noted that, as shown in Figures 5-6 When the back surface 120 of the wafer 10 is plated with metal film 105, the metal film 105 only needs to cover the to-be-plated area of the back surface 120 of the wafer 10. In order to avoid the metal film 105 from being plated to the gap area between the second carrier 220 and the wafer 10 and the second carrier 220, a ring-shaped limiting frame can be used to cover the upper part of the back surface 120 of the wafer 10, to define the to-be-plated area of the back surface 120 of the wafer 10, and avoid the metal film 105 from being plated to other positions.

[0059] According to some embodiments of the present application, as shown in Figures 8-10 The front surface 110 of the wafer 10 has a cutting path S1 defined by the polyimide layer 101. When the front surface 110 of the wafer 10 is cut by etching and laser processes, the wafer 10 is cut according to the cutting path S1. Therefore, the cutting of the wafer 10 is facilitated.

[0060] In some embodiments of the present application, in step S500, the wafer 10 is cut on the front surface 110 by etching and laser processes, which includes:

[0061] S510, cut the interlayer dielectric and the silicon-based body of the wafer by etching process;

[0062] S520, cut the metal film by laser process.

[0063] According to some embodiments of the present application, the metal film 105 is a composite metal layer composed of at least one or more of titanium, nickel-vanadium alloy and silver.

[0064] In some embodiments of the present application, as shown in Figure 4 The bottom of the first carrier plate 210 and the second carrier plate 220 is provided with a through hole.

[0065] It should be noted that by providing a through hole at the bottom of the first carrier plate 210 and the second carrier plate 220. When the wafer 10 is transferred to the first carrier plate 210 or the second carrier plate 220, the gas between the wafer 10 and the bottom wall of the first carrier plate 210 or the second carrier plate 220 can be discharged through the through hole, facilitating the wafer 10 to be transferred and attached to the first carrier plate 210 or the second carrier plate 220. Moreover, when the wafer 10 is transferred from the second carrier plate 220 to the cutting mold frame 30, the gas can enter the gap between the second carrier plate 220 and the wafer 10 from the through hole, facilitating the wafer 10 to be lifted up from the bottom of the second carrier plate 220, and improving the convenience of transferring the wafer 10 from the second carrier plate 220 to the cutting mold frame 30.

[0066] In addition, it should be noted that the cutting mold frame 30 has a support film with good flexibility, and the outer periphery of the support film is provided with a support frame. The cutting mold frame 30 has good support performance for the wafer 10, but the cutting mold frame 30 cannot withstand high-temperature environment and vacuum equipment. Therefore, when the wafer 10 is prepared in the front process, the wafer 10 is supported by the carrier plate. After the high-temperature ion activation is completed, the wafer 10 can be transferred to the carrier plate for subsequent process preparation, and finally transferred to the cutting mold frame 30 to complete the preparation of the wafer 10.

[0067] According to some embodiments of the present application, the preparation method further comprises:

[0068] S600, packaging the cut wafer.

[0069] The preparation method of the semiconductor device according to the present application will be described in detail with reference to the accompanying drawings and one specific embodiment. It should be understood that the following description is only exemplary and should not be construed as a specific limitation of the present application.

[0070] As shown in Figure 1 The preparation method of the semiconductor device comprises:

[0071] S100, removing the polyimide for fixing the first carrier plate and the wafer;

[0072] It should be noted that, as Figure 2As shown, before removing the polyimide used to fix the first carrier disk 210 and the wafer 10, the fabrication of the front-side element 110 of the wafer 10 can be completed, including the fabrication of the interlayer dielectric 102 (ILD), the metal block 103, the metal layer 104 and the polyimide layer 101.

[0073] In step S100, removing the polyimide used to fix the first carrier disk 210 and the wafer 10 specifically involves removing the polyimide using a laser or plasma. That is, the polyimide can be removed using a laser or by using plasma solvent removal. Figure 2 and Figure 3 As shown, when removing polyimide, only the polyimide in the sealing region S2 portion between the wafer 10 and the first carrier disk 210 is removed.

[0074] S200, transferring the wafer from the first carrier disk to the second carrier disk, includes:

[0075] like Figure 4 As shown, the bottom of the first carrier disk 210 and the second carrier disk 220 are provided with through holes. This facilitates the attachment of the wafer 10 to the bottom walls of the first carrier disk 210 and the second carrier disk 220. Figures 4-5 As shown, step S200 includes:

[0076] S210, fasten the second carrier tray above the first carrier tray;

[0077] S220, flip the first and second carrier disks after they are snapped together, so that the wafer is transferred to the second carrier disk under the action of gravity and the adhesion of polyimide.

[0078] S230, remove the first carrier disk.

[0079] It should be noted that when flipping the first carrier 210 and the second carrier 220, the polyimide layer 101 on the front side 110 of the wafer 10 can act as a buffer to protect the wafer 10. Moreover, the polyimide layer 101 has a certain adhesion, and combined with the gravity of the wafer 10, the wafer 10 can be easily transferred from the first carrier 210 to the second carrier 220.

[0080] S300 is a metal coating process applied to the back of the wafer.

[0081] When performing the metal plating process 105 on the back side 120 of wafer 10, an annular limiting frame is used to define the area to be electroplated on the back side 120 of wafer 10.

[0082] It should be noted that, as Figures 5-6As shown, when performing the metal coating 105 on the back side 120 of wafer 10, the metal coating 105 only needs to cover the area to be plated on the back side 120 of wafer 10. To prevent the metal coating 105 from being plated onto the second carrier 220 and the gap area between wafer 10 and the second carrier 220, an annular limiting frame can be used to cover the back side 120 of wafer 10, defining the area to be plated on the back side 120 of wafer 10 and preventing the metal coating 105 from being plated onto other locations. The metal coating 105 is a composite metal layer composed of at least one or more of titanium, nickel-vanadium alloy, and silver.

[0083] S400 attaches the back side of the wafer to the dicing die frame;

[0084] The S500 uses etching and laser cutting processes to cut the wafer on the front side;

[0085] like Figures 8-10 As shown, the front side 110 of wafer 10 has a dicing channel S1 defined by a polyimide layer 101. When wafer 10 is diced using etching and laser processes on the front side 110 of wafer 10, wafer 10 is diced according to the dicing channel S1. This facilitates the dicing of wafer 10.

[0086] In step S500, the wafer is diced on the front side using etching and laser processes, including:

[0087] S510 uses an etching process to cut the interlayer dielectric (ILD) and the silicon substrate of the wafer;

[0088] The S520 uses laser technology to cut metal coatings.

[0089] The S600 encapsulates the diced wafers.

[0090] According to the semiconductor device fabrication method of the present invention, the fabrication process of the front-side element 110 of wafer 10 can be completed in the first carrier 210. Subsequently, wafer 10 can be transferred to the second carrier 220, and a metal plating process 105 can be performed on the back-side wafer 120. When wafer 10 is transferred to the second carrier 220, the polyimide layer 101 of the front-side element 110 of wafer 10 can act as a buffer to protect wafer 10. Under the support of the second carrier 220, the metal plating process 105 on the back-side element 120 of wafer 10 is completed. Then, the back-side element 120 of wafer 10 is attached to the dicing mold 30, and dicing is performed from the front-side element 110 of wafer 10. The fabrication method is reasonable and efficient, improving the fabrication efficiency and processing quality of wafer 10.

[0091] Through the description of specific embodiments, a more in-depth and specific understanding should be gained of the technical means and effects adopted by the present invention to achieve the intended purpose. However, the accompanying drawings are only provided for reference and illustration and are not intended to limit the present invention.

Claims

1. A method of manufacturing a semiconductor device, characterized by, The application relates to a wafer preparation method. The wafer preparation process includes preparation of an interlayer medium, a metal block, a metal layer and a polyimide layer. The polyimide used for fixing the first carrier plate and the wafer is removed; when the polyimide is removed, only the polyimide at the sealing area part between the wafer and the gap of the first carrier plate is removed. The wafer is transferred from the first carrier plate to a second carrier plate, including: buckling the second carrier plate above the first carrier plate; turning over the buckled first carrier plate and the second carrier plate, so that the wafer is transferred to the second carrier plate under the action of gravity and polyimide adhesion; and removing the first carrier plate. A metal plating process is performed on the back surface of the wafer. The back surface of the wafer is attached to a cutting mold frame. The wafer is cut on the front surface by using etching and laser processes, including: cutting the interlayer medium and the silicon-based main body of the wafer by using an etching process; and cutting the metal plating film by using a laser process. The front surface of the wafer has a cutting path defined by the polyimide layer; when the wafer is cut on the front surface by using etching and laser processes, the wafer is cut according to the cutting path.

2. The method of producing a semiconductor device according to claim 1, wherein The polyimide used for fixing the first carrier plate and the wafer is removed by using laser or plasma.

3. The method of producing a semiconductor device according to claim 1, wherein When the metal plating process is performed on the back surface of the wafer, a ring-shaped limiting frame is used to define the to-be-plated area of the back surface of the wafer.

4. The method of producing a semiconductor device according to claim 1, wherein The metal plating film is a composite metal layer composed of at least one or more of titanium, nickel-vanadium alloy and silver.

5. The method of producing a semiconductor device according to claim 1, wherein The bottom of the first carrier plate and the second carrier plate is provided with a through hole.

6. The method of producing a semiconductor device according to claim 1, wherein The preparation method further includes: The cut wafer is packaged.

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