Intelligent power module and control device

Abstract

The application provides an intelligent power module and a control device, wherein the intelligent power module comprises an MCU, at least one HVIC and at least one transistor assembly, the MCU is connected with all the HVICs, each HVIC is connected with a corresponding transistor assembly; wherein the transistor assembly comprises at least two transistors, wherein the transistor is MOSFET or IGBT; the HVIC comprises an LDO and a diode, and the upper bridge arm and the lower bridge arm of each HVIC are connected with one of the transistors in the corresponding transistor assembly; the MCU is used for controlling the connection mode of the transistor. Thus, the IPM provided by the application is an integrated body of the HVIC, the transistor assembly and the MCU. Optionally, the LDO and the diode can be integrated in the HVIC, without the need of adding other devices externally, thereby saving the hardware cost. In addition, by providing the transistor assembly comprising at least two transistors, the voltage range that can be borne is widened, and the safety and reliability of the motor corresponding to the IPM provided by the application are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of automatic control, and in particular to an intelligent power module, a motor and a control device. BACKGROUND

[0002] At present, in the motor control market, people's pursuit of the intelligent degree and high integration degree of motor control is increasing, and accordingly, the design requirements of the intelligent power module are also increasingly high. Among them, the IPM (Intelligent Power Module) is a power drive product combining power electronics and integrated circuit technology.

[0003] However, in the related art, especially for smaller power application scenarios, there is no IPM with the advantages of low cost, high reliability and low development difficulty.

[0004] Therefore, how to propose an IPM with the advantages of low cost, high reliability and low development difficulty has become a problem to be solved. SUMMARY

[0005] The present application aims to at least partly solve one of the problems in the related art.

[0006] To this end, the first purpose of the present application is to propose an intelligent power module, which can reduce the cost and development difficulty of the IPM and improve the reliability of the IPM.

[0007] The second purpose of the present application is to propose a control device.

[0008] The third purpose of the present application is to propose a chip.

[0009] To achieve the above purpose, the first aspect of the present application proposes an intelligent power module, comprising: a micro control unit MCU, at least one high voltage integrated circuit HVIC and at least one transistor assembly, the MCU is connected with all the HVICs, and each HVIC is connected with a corresponding transistor assembly; wherein the transistor assembly comprises at least two transistors, wherein the transistor is a metal-oxide semiconductor field effect transistor MOSFET or an insulated gate bipolar transistor IGBT; the HVIC comprises a low dropout linear regulator LDO and a diode, and the upper bridge arm and the lower bridge arm of each HVIC are connected with one of the transistors in the corresponding transistor assembly; the MCU is used to control the connection mode of the transistors in the transistor assembly.

[0010] According to an embodiment of the present application, the MCU is further configured to: acquire a bus voltage of the motor; and acquire a target transistor corresponding to each of the transistor assemblies according to the bus voltage, and connect the target transistors.

[0011] According to an embodiment of the present application, the MCU is further configured to: select any one of the transistors as the target transistor when the bus voltage is less than a bus voltage threshold; or select at least two of the transistors as the target transistors when the bus voltage is greater than or equal to the bus voltage threshold, and connect the target transistors in series.

[0012] According to an embodiment of the present application, the MCU is further configured to: acquire a sensor control strategy; and connect a detection path between the motor and a target signal detection unit according to the sensor control strategy.

[0013] According to an embodiment of the present application, the MCU is further configured to: connect a detection path between the motor and a back electromotive force signal detection unit when the sensor control strategy is a sensor control strategy, and perform sensor-sine-wave control on the motor; or disconnect the detection path between the motor and a sensor when the sensor control strategy is a sensorless control strategy, and perform sensorless-square-wave control or sensorless-sine-wave control on the motor.

[0014] According to an embodiment of the present application, the MCU is further configured to: acquire a first current and a second current; and acquire a temperature of the intelligent power module according to the acquired first current and the acquired second current.

[0015] According to an embodiment of the present application, the temperature detection unit is further configured to: acquire a ratio of the first current and the second current; acquire a base-emitter voltage difference VBE of a diode between the first current and the second current according to the ratio; and acquire the temperature according to the VBE.

[0016] According to an embodiment of the present application, the diode is a fast recovery diode FRD.

[0017] The intelligent power module of the embodiments of the present application is an integrated body of the HVIC, the transistor assemblies and the MCU. Optionally, the LDO and the diode can be integrated in the HVIC, without the need to add other devices externally, thereby saving hardware costs. In addition, by providing the transistor assemblies including at least two transistors, the voltage range that can be tolerated is widened, thereby improving the safety and reliability of the motor corresponding to the IPM.

[0018] To achieve the above object, the second aspect of the present application provides a control device, comprising: a motor and the intelligent power module as described in the first aspect of the present application.

[0019] According to one embodiment of the present application, the installation position of the intelligent power module is inside the motor or outside the motor.

[0020] The control device of the embodiments of the present application comprises the motor and the intelligent power module encapsulating the HVIC, the transistor assembly and the MCU, and optionally, the LDO and the diode can be integrated in the HVIC, without adding other devices externally, so as to save the hardware cost on the basis of reducing the design difficulty and development difficulty. In addition, by providing the transistor assembly comprising at least two transistors, the voltage range that can be tolerated is widened, so as to be suitable for various application occasions such as high voltage and low voltage, and the safety and reliability of the control device corresponding to the IPM proposed in the present application are improved.

[0021] To achieve the above object, the third aspect of the present application provides a chip, comprising: the intelligent power module as described in the first aspect of the present application.

[0022] The chip of the embodiments of the present application comprises the motor and the intelligent power module encapsulating the HVIC, the transistor assembly and the MCU, and optionally, the LDO and the diode can be integrated in the HVIC, without adding other devices externally, so as to save the hardware cost on the basis of reducing the design difficulty and development difficulty. In addition, by providing the transistor assembly comprising at least two transistors, the voltage range that can be tolerated is widened, so as to be suitable for various application occasions such as high voltage and low voltage, and the safety and reliability of the chip corresponding to the IPM proposed in the present application are improved. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a structural schematic diagram of an intelligent power module according to one embodiment of the present application;

[0024] Figure 2 is a structural schematic diagram of an intelligent power module according to another embodiment of the present application;

[0025] Figure 3 is a minimum system without sensor according to another embodiment of the present application;

[0026] Figure 4 is a minimum system with sensor according to another embodiment of the present application;

[0027] Figure 5 is a structural schematic diagram of an intelligent power module according to another embodiment of the present application;

[0028] Figure 6 is a structural schematic diagram of a control device according to one embodiment of the present application;

[0029] Figure 7 is a structural schematic diagram of a control device according to another embodiment of the present application;

[0030] Figure 8 is a structural schematic diagram of a chip according to one embodiment of the present application. DETAILED DESCRIPTION

[0031] Embodiments of the present application are described in detail below with reference to the accompanying drawings, in which the same or similar components have the same or similar reference numbers throughout the drawings and a description of which is not repeated. The embodiments described below by reference to the drawings are exemplary and are intended to explain the present application, and are not to be understood as limiting the present application.

[0032] The intelligent power module, the motor and the control device according to the embodiments of the present application are described below in conjunction with the accompanying drawings.

[0033] Figure 1 is a schematic diagram of an intelligent power module according to one embodiment of the present application.

[0034] As shown in Figure 1 , an IPM (Intelligent Power Module) 1000 according to an embodiment of the present application includes at least one HVIC (High Voltage Integrated Circuit) 100, at least one transistor assembly 200 and an MCU (Microcontroller Unit) 300.

[0035] Optionally, the MCU 300 is connected with all the HVICs 100, and each HVIC 100 is connected with a corresponding transistor assembly 200.

[0036] The HVIC 100 includes an LDO (low dropout regulator) 11 and a diode 12.

[0037] The LDO 11 is an integrated circuit voltage regulator for supplying power, i.e., providing electrical energy, to the MCU 300.

[0038] It should be noted that the specific type of diode in the present application is not limited, and can be set according to actual conditions.

[0039] Optionally, the diode can be set as an FRD (Fast Recovery Diode).

[0040] FRD is a semiconductor diode with good switching characteristics and short reverse recovery time, mainly used in electronic circuits such as switching power supply, PWM (Pulse Width Modulation) pulse width modulator, frequency converter, etc., as high-frequency rectifier diode, freewheeling diode or damping diode.

[0041] The transistor assembly 200 comprises at least two transistors 21, wherein the transistor 21 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) (hereinafter referred to as MOS tube) or an IGBT (Insulated Gate Bipolar Transistor) (hereinafter referred to as IGBT tube).

[0042] It should be noted that the specific number of transistors 21 in the transistor assembly 200 is not limited in the present application, and only the type of all transistors 21 in the transistor assembly 200 is consistent.

[0043] For example, the transistor assembly 200 can be configured to include one MOS tube, i.e. MOS tube 21-1; or the transistor assembly 200 can be configured to include two MOS tubes, i.e. MOS tube 21-1 and MOS tube 21-2.

[0044] For another example, the transistor assembly 200 can be configured to include one IGBT tube, i.e. IGBT tube 21-3; or the transistor assembly 200 can be configured to include two IGBT tubes, i.e. IGBT tube 21-3 and IGBT tube 21-4.

[0045] That is, MOS tubes and IGBT tubes will not appear in the transistor assembly 200 at the same time, i.e. the transistor assembly 200 will not use MOS tubes and IGBT tubes mixed.

[0046] It should be noted that since each transistor assembly 200 includes at least two transistors 21, in this case, the upper and lower bridge arms of each HVIC 100 are respectively connected to one of the transistors 21 in the corresponding transistor assembly 200.

[0047] For example, when all transistors are MOS tubes, as shown in FIG. 2, the upper and lower bridge arms of each HVIC 100 are respectively connected to one of the MOS tubes in the corresponding transistor assembly 200. Figure 2As shown, for the IPM a, it includes one MCU, three HVICs connected with the MCU, for the HVIC-1, the upper bridge arm 1-1 is connected with the MOS tube 1-1 in the transistor assembly 1, and the lower bridge arm 1-2 is connected with the MOS tube 1-2 in the transistor assembly 1; for the HVIC-2, the upper bridge arm 2-1 is connected with the MOS tube 2-1 in the transistor assembly 2, and the lower bridge arm 2-2 is connected with the MOS tube 2-2 in the transistor assembly 2; for the HVIC-3, the upper bridge arm 3-1 is connected with the MOS tube 3-1 in the transistor assembly 3, and the lower bridge arm 3-2 is connected with the MOS tube 3-2 in the transistor assembly 3. That is, in this case, the IPM a includes one MCU, three HVICs and six MOS tubes.

[0048] Further, the MCU 300 is configured to control the connection mode of the transistor 21 in the transistor assembly 200.

[0049] It should be noted that the number and connection mode of the transistor 21 in the transistor assembly 200 are not limited in the present application, and can be set according to actual conditions.

[0050] As a possible implementation manner, the voltage fluctuation level corresponding to the delivery area (mains voltage) can be obtained, and the number and connection mode of the transistor 21 in the transistor assembly 200 are set according to the voltage fluctuation level.

[0051] For example, it is obtained that the delivery area of the IPM 1000 is A, and the voltage fluctuation level corresponding to the delivery area A is gentle, that is, the voltage corresponding to the delivery area A is relatively stable.

[0052] In this case, a single transistor can be used, that is, the number of transistors 21 is set to 1.

[0053] For another example, it is obtained that the delivery area of the IPM 1000 is B, and the voltage fluctuation level corresponding to the delivery area B is severe, that is, the voltage corresponding to the delivery area B is unstable, in this case, multiple transistors can be used, and optionally, double transistors can be used, that is, the number of transistors 21 is set to 2. Further, the connection mode between the two transistors 21 can be set to series connection.

[0054] In this case, the two transistors 21 will share the higher voltage that rises sharply.

[0055] Further, when the number of transistors 21 in the transistor assembly 200 is at least two, the MCU 300 can control the transistors 21 by using internal digital design and analog design.

[0056] Therefore, the IPM 1000 proposed in this application is an integrated device that packages an HVIC 100, a transistor assembly 200, and an MCU 300. Optionally, the LDO 11 and diode 12 can be integrated into the HVIC 100, eliminating the need for additional external components, thereby reducing design and development complexity and saving hardware costs. Furthermore, by providing a transistor assembly 200 including at least two transistors 21, the voltage range that can be withstood can be widened, improving the safety and reliability of the motor corresponding to the IPM 1000 proposed in this application.

[0057] It should be noted that, unlike the ordinary diodes commonly used in related technologies, this involves using non-FRDs. In this case, additional external components are typically required, which can significantly increase the design, development, and maintenance complexity. Furthermore, it may also significantly increase the hardware and maintenance costs of the IPM 1000 intelligent power module.

[0058] Therefore, unlike ordinary diodes, this application embodiment uses an FRD and integrates the LDO 11 and the FRD into the HVIC100 to reduce design and development difficulty.

[0059] In some embodiments, the IPM 1000 and MCU 300 proposed in this application are further configured to: acquire a sensor control strategy and, based on the sensor control strategy, connect a detection path between the motor and the target signal detection unit.

[0060] In this context, "motor" refers to the motor corresponding to the IPM 1000 proposed in this application, for example, it refers to motor A equipped with IPM1000.

[0061] The target signal refers to either the sensor signal (e.g., the Hall signal corresponding to a Hall sensor) or the back EMF signal.

[0062] It should be noted that, in this application, based on the MCU 300, the same IPM 1000 can simultaneously support both sensor-equipped and sensorless DC brushless sensor control methods.

[0063] For example, such as Figure 3 The sensorless minimum system shown can support sensorless control.

[0064] Alternatively, in this case, voltage and current can be obtained by identifying the peripheral circuitry. Furthermore, the position of an object can be detected based on the acquired voltage and current signals, thereby achieving sensorless control.

[0065] For example, such as Figure 4The minimum system shown with the sensor can support the sensor control mode.

[0066] Optionally, a Hall sensor can be installed, in which case the Hall position can be detected to realize the sensor control mode.

[0067] That is, in the present application, the sensor control strategy can be obtained through the MCU 300 in the IPM 1000, and the detection path between the motor and the target signal detection unit can be connected according to the sensor control strategy.

[0068] For the sensor control strategy, when the sensor control strategy is a sensor control strategy, the detection path between the motor and the back electromotive force signal detection unit can be turned on to switch the control mode of the motor to sensor control, and then the sensor sine wave control of the motor can be performed.

[0069] It should be noted that the specific way of obtaining the sensor control strategy in the present application is not limited, and can be set according to actual conditions.

[0070] As a possible implementation, optionally, the number of Hall sensors with abnormal running states can be obtained, and the number is compared with a preset number threshold.

[0071] Optionally, when the number does not reach the preset number threshold, it means that the number of available Hall sensors without abnormalities is greater than or equal to the required number, in which case the sensor strategy can be selected.

[0072] The preset number threshold can be set according to actual conditions. For example, the preset number threshold can be set to 1 / 2 of the total number of sensors connected to the motor, that is, if there are 4 sensors connected to the motor, in this case, 2 can be set as the preset number threshold.

[0073] It should be noted that if the total number of sensors connected to the motor is odd, in this case, the operation result can be rounded up or down after obtaining 1 / 2 of the total number of sensors connected to the motor, that is, if there are 5 sensors connected to the motor, in this case, 2 or 3 can be set as the preset number threshold.

[0074] Further, when it is determined that the number does not reach the preset number threshold, the detection path between the motor and the Hall sensor with an abnormal running state can be disconnected, and the detection path between the motor and the Hall sensor without an abnormal running state can be kept connected.

[0075] That is, the intelligent power module IPM 1000 proposed in the present application supports disconnecting the detection path between part of the motor and the Hall signal when the determined number does not reach the preset number threshold, and supports keeping the detection path between the remaining part of the motor and the Hall signal connected.

[0076] For the sensorless control strategy, optionally, when the sensor control strategy is the sensorless control strategy, the detection path between the motor and the sensor can be disconnected to switch the control mode of the motor to the sensorless control, and then the sensorless square wave control or the sensorless sine wave control can be performed on the motor.

[0077] Optionally, when the number reaches the preset number threshold, it indicates that the number of abnormal available Hall sensors is less than the required number, in which case, the sensorless strategy can be selected.

[0078] For example, the preset number threshold is obtained as 2, in which case, if the number of Hall sensors with abnormal running states is obtained as 3, it indicates that the number of Hall sensors running well is less than the number of Hall sensors that can actually support stable operation of the motor (the preset number threshold), that is, the number reaches the preset number threshold, and then the motor can be controlled in the sensorless manner. That is, the detection path between the motor and the Hall signal can be disconnected.

[0079] It should be noted that the specific manner of obtaining the number of Hall sensors with abnormal running states involved in the foregoing process of obtaining the sensor control strategy is not limited in the present application, and can be set according to actual conditions.

[0080] As a possible implementation manner, the Hall signal for the motor rotor detected by at least one Hall sensor can be obtained. Optionally, each phase Hall signal of the Hall sensor can be detected to obtain three-phase Hall signals of each Hall sensor.

[0081] Further, the Hall signal can be analog-digital converted for each Hall sensor to obtain a digital signal corresponding to the Hall signal.

[0082] It should be noted that the Hall signal proposed in the present application is an analog signal, and the running state of the Hall sensor cannot be directly reflected. Therefore, after the Hall signal is obtained, the Hall signal can be digitally processed to obtain a digital signal corresponding to the Hall signal.

[0083] It should be noted that the present application does not limit the specific manner of analog-digital converting the Hall signal to obtain a digital signal corresponding to the Hall signal, and the specific manner can be set according to actual conditions.

[0084] As a possible implementation, the continuous analog signal can be converted into a discrete digital signal based on an analog-to-digital converter, also referred to as an A / D converter.

[0085] Further, whether the running state of the corresponding Hall sensor is abnormal can be determined according to the digital signal.

[0086] Further, when it is determined that there is a Hall sensor with an abnormal running state, the detection path between the motor and the Hall signal can be disconnected.

[0087] Further, when it is determined that there is no Hall sensor with an abnormal running state, the detection path between the motor and the Hall signal can be kept connected.

[0088] It should be noted that the present application does not limit the specific way of determining whether the running state of the corresponding Hall sensor is abnormal according to the digital signal, which can be set according to actual conditions.

[0089] As a possible implementation, the jumping of the digital signal can be monitored within a preset time period to obtain the jumping trajectory of the digital signal.

[0090] The preset time period can be set according to actual conditions.

[0091] For example, if the preset time period is 30s, in this case, if the digital signal is 101, it means that the digital signal has changed within the preset time period; if the digital signal is always 111, it means that the digital signal has not jumped within the preset time period.

[0092] It should be noted that when the motor rotates normally (normal operation), the detected Hall signal will change in a specific order. That is, when any phase of the Hall sensor is damaged, the digital signal within the preset time period may still change, but the change order is not consistent with the specific order.

[0093] Therefore, in the present application, after it is determined that the digital signal has jumped within the preset time period, the change order of the digital signal can be further identified.

[0094] In the present application, when trying to identify the change order of the digital signal, the jumping trajectory of the digital signal can be obtained.

[0095] The jumping trajectory refers to the jumping between high and low levels.

[0096] For example, within the preset time period, the analog signal corresponding to the digital signal first jumps from high to low, and then jumps from low to high. In this case, the jumping trajectory of the digital signal is 101.

[0097] It should be noted that in the present application, before the jump track of the digital signal is obtained, it can be determined whether the digital signal jumps within a preset time period. Alternatively, when it is determined that the digital signal jumps within the preset time period, the jump track of the digital signal can be obtained to determine whether the jump track is consistent with the preset jump track.

[0098] Further, when it is determined that the jump track is consistent with the preset jump track, it can be determined that the running state of the Hall sensor does not exist abnormal jump track.

[0099] For example, if the specific sequence is 101, in this case, if the jump track of the digital signal within the preset time period is 101, it indicates that the jump track is consistent with the preset jump track, and then it can be determined that the running state of the Hall sensor does not exist abnormal.

[0100] Further, when it is determined that the digital signal does not jump within the preset time period, it can be determined that the running state of the Hall sensor is abnormal.

[0101] For example, if the digital signal within the preset time period is always 111, it indicates that the jump track does not jump, and then it can be directly determined that the running state of the Hall sensor is abnormal.

[0102] Further, when it is determined that the jump track is inconsistent with the preset jump track, it can be determined that the running state of the Hall sensor is abnormal.

[0103] For example, if the specific sequence is 101, in this case, if the jump track of the digital signal within the preset time period is 110, it indicates that the jump track is inconsistent with the preset jump track, and then it can be determined that the running state of the Hall sensor is abnormal.

[0104] Therefore, in the IPM 1000 proposed in the present application, the MCU 300 is also used to obtain a sensor control strategy, and connect a detection path between the motor and the target signal detection unit according to the sensor control strategy, so that the same chip can realize three sensor control modes of the direct current brushless motor through the definition and system design of the MCU 300.

[0105] It should be noted that in the present application, in order to improve the adaptability of the intelligent power module IPM 1000, that is, in order to enable the intelligent power module IPM 1000 to be applicable to various application scenarios with different operating environments, the MCU 300 in the IPM 1000 proposed in the present application is also used to connect the target transistor based on the bus voltage of the motor.

[0106] It should be noted that, in general, the number of transistors 21 provided in the transistor assembly 200 is positively correlated with the bus voltage of the motor and / or the bus voltage fluctuation.

[0107] That is, when the bus voltage of the motor is high and / or the bus voltage fluctuation is large, the number of transistors 21 provided in the transistor assembly 200 is usually large; when the bus voltage of the motor is low and / or the bus voltage fluctuation is small, the number of transistors 21 provided in the transistor assembly 200 is usually small.

[0108] For example, if the bus voltage is a1, the number of MOS transistors 21 provided in the corresponding transistor assembly 200 is a2; if the bus voltage is b1, the number of MOS transistors 21 provided in the corresponding transistor assembly 200 is b2. In this case, if a1 is greater than b1, a2 is usually greater than b2; otherwise, if a1 is less than or equal to b1, a2 is usually less than or equal to b2.

[0109] For example, if the bus voltage is a1, the number of MOS transistors 21 provided in the corresponding transistor assembly 200 is a2; if the bus voltage is b1, the number of MOS transistors 21 provided in the corresponding transistor assembly 200 is b2. In this case, if the corresponding voltage fluctuation of a1 is greater than b1, a2 is usually greater than b2; otherwise, if the corresponding voltage fluctuation of a1 is less than or equal to b1, a2 is usually less than or equal to b2.

[0110] It should be noted that, in this application, the specific way of obtaining the selection strategy for the transistor according to the bus voltage is not limited, and can be set according to the actual situation.

[0111] As a possible implementation manner, the bus voltage of the motor and the pre-set bus voltage threshold can be obtained, and the bus voltage and the bus voltage threshold can be compared. Further, the selection strategy for the transistor can be obtained according to the comparison result.

[0112] That is, the MCU 300 is also used for: when the bus voltage is less than the bus voltage threshold, selecting any transistor as a target transistor; or when the bus voltage is greater than or equal to the bus voltage threshold, selecting at least two transistors as target transistors and connecting the target transistors in series.

[0113] Optionally, when the bus voltage is less than the bus voltage threshold, it means that the bus voltage is small, and only a small number of transistors can bear the bus voltage, so the first selection strategy can be used as the selection strategy.

[0114] Further, any transistor can be selected as a target transistor according to the first selection strategy.

[0115] For example, if two MOS tubes 21 (21-1 and 21-2) are arranged in the transistor assembly 200, MOS tube 21-1 or MOS tube 21-2 can be selected as the target transistor.

[0116] Optionally, when the bus voltage is greater than or equal to the bus voltage threshold value, it indicates that the bus voltage is large, and only a small number of transistors cannot bear the bus voltage. Therefore, the second selection strategy can be used as the selection strategy.

[0117] Further, at least two transistors can be selected as target transistors according to the second selection strategy, and the target transistors are connected in series.

[0118] For example, if two MOS tubes 21 (21-1 and 21-2) are arranged in the transistor assembly 200, MOS tube 21-1 and MOS tube 21-2 can be selected as the target transistors.

[0119] It should be noted that in the embodiments of the present application, the selection strategy at least includes the target transistors and the target connection mode corresponding to the target transistors.

[0120] Further, the target connection mode corresponding to the target transistors can be extracted from the selection strategy, and the target transistors are connected according to the target connection mode.

[0121] For example, when MOS tube 21-1 and MOS tube 21-2 are selected as the target MOS tubes, MOS tube 21-1 and MOS tube 21-2 can be connected in series.

[0122] The bus voltage threshold value can be set according to actual conditions. For example, the bus voltage threshold value can be set as a value higher than the average value of the mains voltage.

[0123] Therefore, the MCU 300 in the IPM 1000 proposed in the present application is also used to obtain a sensor control strategy, and connect a detection path between the motor and the target signal detection unit according to the sensor control strategy. Optionally, when the sensor control strategy is a sensor control strategy, the detection path between the motor and the back electromotive force signal is connected, and the motor is controlled by the sensor sine wave control; or when the sensor control strategy is a sensorless control strategy, the detection path between the motor and the sensor is disconnected, and the motor is controlled by the sensorless square wave control or the sensorless sine wave control, so that the same chip can realize three sensor control modes of the direct current brushless motor.

[0124]

[0125] In some embodiments, as Figure 5 ​As shown, the IPM 1000 proposed in the present application further comprises a temperature detection unit 600.

[0126] The temperature detection unit 600 is configured to obtain the first current and the second current, and obtain the temperature of the IPM 1000 according to the obtained first current and second current.

[0127] It should be noted that high-precision temperature detection can lay a good foundation for the stable operation of the IPM and the motor provided with the IPM.

[0128] For example, more and more frequency converters of variable frequency air conditioners are provided with IPMs, so that the heat generated by the operation of the IPM during the operation of the air conditioner causes the temperature of the IPM to rise. In this case, if the temperature of the IPM is too high, the IPM may be damaged, thereby causing the motor and the corresponding air conditioner to be unable to work.

[0129] Therefore, the present application proposes a temperature detection unit 600 with higher precision, which can more accurately obtain the temperature of the IPM 1000, thereby ensuring the stable operation of the IPM, the motor and the corresponding air conditioner.

[0130] In the embodiment of the present application, the temperature detection unit 600 can determine the temperature inside the IPM 1000 by obtaining the VBE (Valve Base Electronic) difference of the diode biased at different currents.

[0131] Alternatively, the ratio N of the first current and the second current can be obtained, and the VBE difference of the diode between the first current and the second current can be obtained based on the ratio N according to the following formula:

[0132] VBE difference = KT / q x ln(N)

[0133] Wherein, K is the Boltzmann constant, q is the electronic charge, T is the Kelvin temperature, and N is the ratio of the first current and the second current.

[0134] Further, after obtaining the VBE difference, the temperature can be obtained according to the VBE difference.

[0135] It should be noted that in the present application, the first current and the second current are both bias currents.

[0136] The bias current refers to the base DC current of the input transistor of the first-stage amplifier.

[0137] It should be noted that the specific selection of the temperature detection unit in the present application is not limited, and can be set according to the actual situation.

[0138] As a possible implementation, the temperature detection unit 600 can be configured by a resistor of a non-NTC (Negative Temperature Coefficient) thermistor and a non-PTC (Positive Temperature Coefficient thermistor) thermistor, and the accuracy thereof is about 1%.

[0139] Further, after obtaining the temperature, the temperature protection can be performed in time when it is determined that the temperature reaches the first temperature threshold. Further, when the temperature is reduced to below the second temperature threshold, i.e., when it is determined that the temperature does not reach the second temperature threshold, it is indicated that the temperature fault is eliminated, and then the temperature protection can be released.

[0140] Therefore, the IPM 1000 proposed in the present application further includes the temperature detection unit 600 capable of determining the temperature inside the IPM 1000 based on the VBE difference of the diode under different currents, so as to realize high-precision detection of the temperature inside the IPM 1000, and in particular, the detection accuracy can be controlled within about 1 degree, which is much higher than the temperature detection unit inside the IPM in the related art.

[0141] It should be noted that the intelligent power module IPM 1000 proposed in the present application can be applied to various scenarios.

[0142] For the air conditioner application scenario, it should be noted that the air conditioner application scenario is not limited to the application of the air conditioner with the refrigeration and / or heating function, but also includes the application of the air purifier and other devices with the purification function.

[0143] The application of the intelligent power module IPM 1000 proposed in the present application will be explained and described below by taking the air conditioner indoor unit including the motor with the Hall sensor as an example.

[0144] As a possible implementation, by integrating the LDO 11 and the diode 12 in the HVIC 100, other devices do not need to be additionally arranged outside, so as to save the hardware cost on the basis of reducing the design difficulty and development difficulty, and further reduce the space occupied by the intelligent power module IPM 1000, and improve the economy of the intelligent power module IPM 1000 and the air conditioner indoor unit.

[0145] In addition, by providing the transistor assembly 200 including at least two transistors 21, the voltage range that can be withstood is widened, and the safety and reliability of the IPM 1000 proposed in the present application corresponding to the motor are improved, and thus the stable operation of the air conditioner indoor unit and the air conditioner is ensured.

[0146] Therefore, in the air conditioner application scene such as the air conditioner indoor unit, the air conditioner indoor unit can have economy and stability of operation based on the small intelligent power module IPM 1000. That is, by using the intelligent power module IPM 1000, when it is determined that the operating state of the Hall sensor is abnormal, the control mode of the motor is actively switched to sensorless control, so that the motor can still operate normally and stably when the operating state of the Hall sensor is abnormal, avoiding the problem of failure of the entire air conditioner indoor unit caused by damage of the Hall element. In addition, the service life of the motor and the corresponding electrical equipment is increased, solving the problem of reduced service life and failure of the motor caused by damage of the Hall sensor and other sensors.

[0147] For the electrical equipment application scene, the electrical equipment (Electrical Equipment) refers to the general term for devices such as generators, transformers, power lines, circuit breakers, etc. in the power system. That is, the electrical equipment application scene refers to the application scene of at least one of the following devices: power system generator, transformer, power line, etc.

[0148] The intelligent power module IPM 1000 proposed in the present application will be explained and described below taking a transformer including a motor with a Hall sensor as an example.

[0149] As a possible implementation, by integrating the LDO 11 and the diode 12 in the HVIC 100, without adding other devices externally, the hardware cost is saved on the basis of reducing the design and development difficulty, thereby reducing the space occupied by the intelligent power module IPM 1000 and improving the economy of the intelligent power module IPM 1000 and the transformer.

[0150] In addition, by providing the transistor assembly 200 including at least two transistors 21, the voltage range that can be tolerated is widened, and the safety and reliability of the motor corresponding to the IPM 1000 proposed in the present application are improved, thereby ensuring stable operation of the transformer.

[0151] Therefore, in the electrical equipment application scene such as the transformer, the transformer can have economy and stability of operation based on the small intelligent power module IPM 1000. That is, by using the intelligent power module IPM 1000, when it is determined that the operating state of the Hall sensor is abnormal, the control mode of the motor is actively switched to sensorless control, so that the motor can still operate normally and stably when the operating state of the Hall sensor is abnormal, avoiding the problem of failure of the entire transformer caused by damage of the Hall element. In addition, the service life of the motor and the corresponding electrical equipment is increased, solving the problem of reduced service life and failure of the motor caused by damage of the Hall sensor and other sensors.

[0152] For the chip application scenario, the chip (microchip) refers to a general term of semiconductor element products. That is, the electrical equipment application scenario refers to at least one of the following semiconductor element product application scenarios.

[0153] It should be noted that in actual application, the chip is often arranged in the interior of the equipment (for example, the electronic equipment), in which case, the chip application scenario usually refers to the application scenario of the equipment provided with the chip.

[0154] The intelligent power module IPM 1000 proposed in the present application will be explained and described below by taking the equipment provided with the chip as an example, which includes a motor with a Hall sensor.

[0155] As a possible implementation manner, the LDO 11 and the diode 12 can be integrated in the HVIC 100, without the need to additionally add other devices outside, so as to save the hardware cost on the basis of reducing the design difficulty and development difficulty, thereby reducing the occupied space of the intelligent power module IPM 1000 and improving the economy of the intelligent power module IPM 1000, the chip and the equipment provided with the chip.

[0156] In addition, by providing the transistor assembly 200 including at least two transistors 21, the voltage range that can be tolerated is widened, and the safety and reliability of the motor corresponding to the IPM 1000 proposed in the present application are improved, thereby ensuring the stable operation of the chip and the equipment provided with the chip.

[0157] Therefore, in the chip application scenario such as the equipment provided with the chip, the chip and the equipment provided with the chip can have both economy and stable operation based on the small intelligent power module IPM 1000. That is, by using the intelligent power module IPM 1000, when it is determined that the running state of the Hall sensor is abnormal, the control mode of the motor is actively switched to sensorless control, so that the normal and stable operation of the motor can be maintained when the running state of the Hall sensor is abnormal, and the problem of invalidation of the chip and the equipment provided with the chip caused by damage of the Hall element is avoided. In addition, the service life of the motor and the electrical equipment corresponding to the motor is increased, and the problem of reduced service life and invalidation of the motor caused by damage of the Hall sensor and the like is solved.

[0158] Further, on the basis of the above examples, the air conditioner, electrical equipment, chip and other devices are often in a certain link in the system, even an important link. In this case, the intelligent power module IPM 1000 based on the present application can ensure the stable operation of the air conditioner, electrical equipment, chip and other control devices, while avoiding the problem of system paralysis caused by damage to a device.

[0159] In addition, the intelligent power module IPM 1000 proposed in the present application can not only ensure the stability of operation, but also reduce the hardware cost and the maintenance cost in the later period, and improve the economy in the motor control process, which is different from the method of setting a redundant control circuit and a control device.

[0160] Further, since the motor with a Hall sensor can be set in different regions, the operating environment of the motor can also be different. In this case, the intelligent power module IPM 1000 of the present application can bring more effects for different operating environments in different regions.

[0161] For example, motor A with a Hall sensor operates in region A where the power supply fluctuates greatly. In this case, the frequent, significant increase and sharp decrease of the power supply can easily cause the Hall sensor of motor A to be abnormal. Therefore, based on the intelligent power module IPM 1000 of the present application, the motor can still operate normally and stably even if the Hall sensor is abnormal, which weakens the impact of the short service life of the Hall sensor caused by the large fluctuation of the power supply on the motor, further increases the service life of the motor and the corresponding electrical equipment, and solves the problem of reduced service life and failure of the motor caused by damage to the Hall sensor and other sensors.

[0162] In summary, the present application proposes a three-in-one intelligent power module IPM 1000 integrating multiple algorithms, which includes a packaging module, such as a dual in-line package module; provides multiple hardware connections; supports multiple, such as three, motor control algorithms that are automatically compatible; has a short-time overvoltage protection function; and has a high-precision temperature detection function.

[0163] Among them, the VIC 100 packaged with the LDO 11 (powering the MCU 300), the diode 12 such as FRD, the high-performance MOS tube / IGBT tube and the customized MCU 300 dedicated to the intelligent power module IPM 1000.

[0164] Further, the same intelligent power module IPM 1000 can be used to achieve different control modes according to the application scenario.

[0165] For example, when the intelligent power module IPM 1000 is installed inside the motor, a Hall sensor can be installed, and at this time, the Hall position can be detected to realize sensorless control; when the intelligent power module IPM 1000 is installed on the control panel outside the motor, the position can also be detected through the voltage and current signals inside to realize the sensorless control mode.

[0166] Further, by using the cooperation of the digital design and the analog design inside the MCU 300, the excessively high bus voltage is realized from one transistor 21 to two transistors 21-1 and 21-2 in series connection within microseconds, so as to realize high reliability of the system, and especially for the regions such as Southeast Asia where the voltage fluctuation is relatively severe, the stability improvement effect is more significant.

[0167] Further, by measuring the VBE base-emitter difference of the diode under different currents, the temperature measurement can be realized.

[0168] Optionally, the VBE base-emitter difference can be obtained according to the following formula:

[0169] VBE=KT / q*ln(N)

[0170] Wherein, K is the Boltzmann constant, q is the electronic charge, T is the Kelvin temperature, and N is the ratio of the two bias currents.

[0171] Therefore, by the above-mentioned manner, the high-precision temperature control within 1° can be realized, and the precision far exceeds the temperature detection precision of the power module inside the related technology.

[0172] In summary, the IPM 1000 packaging the HVIC 100, the transistor assembly 200 and the MCU 300 is proposed in the present application, and by the definition and system design of the MCU 300, the same chip can support three kinds of direct-current brushless control modes, and optionally, any one of the following control modes can be supported: sensorless square wave control, sensor sine wave control and sensorless sine wave control.

[0173] At the same time, the overvoltage protection of the system can be realized by using the built-in comparator. In particular, it is suitable for regions with unstable mains voltage.

[0174] Further, the temperature limitation and protection of the system can be realized by using the built-in high-precision temperature detection unit 600, so as to reduce the cost and development difficulty of the IPM and improve the reliability of the IPM.

[0175] Figure 6 is a schematic diagram of a control device according to an embodiment of the present application.

[0176] As Figure 6As shown, the control device 3000 of the embodiment of the present application comprises the motor 2000 and the IPM 1000.

[0177] It should be noted that the relative position between the motor 2000 and the IPM 1000 is not limited in the present application, and can be set according to actual conditions.

[0178] Optionally, as shown in Figure 6 , the IPM 1000 is installed outside the motor 2000; optionally, as shown in Figure 7 , the IPM 1000 is installed inside the motor 2000.

[0179] For example, when the IPM 1000 is installed inside the motor 2000, the sensor-based SVPWM (Space Vector Pulse Width Modulation, high-performance sinusoidal wave space vector pulse width modulation) control can be realized; when the IPM 1000 is installed outside the motor 2000, the sensorless control mode (square wave and sinusoidal wave) can be realized through adjustment of the peripheral circuit, and the condition of the peripheral device can be automatically identified.

[0180] It should be noted that the other electrical appliances including the IPM 1000 and the motor 2000 proposed in the present application have a power less than a preset power (for example, 60W), such as new air machines, purifiers, fans and the like.

[0181] Therefore, the control device 3000 proposed in the present application comprises a motor and an intelligent power module encapsulating a HVIC, a transistor assembly and an MCU, and optionally, the LDO and the diode can be integrated in the HVIC, without the need to additionally add other devices outside, so as to save the hardware cost on the basis of reducing the design difficulty and development difficulty. In addition, by providing the transistor assembly comprising at least two transistors, the voltage range that can be tolerated is widened, thereby being applicable to various application occasions such as high voltage and low voltage, and the safety and reliability of the control device corresponding to the IPM proposed in the present application are improved.

[0182] In order to realize the above-mentioned embodiment, the embodiment of the present application further proposes a chip 4000, as shown in Figure 8 , comprising the intelligent power module IPM 1000 proposed in the present application.

[0183] Therefore, the chip 4000 provided by the application includes a motor and an intelligent power module for packaging the HVIC, the transistor assembly and the MCU, and the LDO and the diode can be optionally integrated in the HVIC, without the need of adding other devices externally, so as to save the hardware cost on the basis of reducing the design difficulty and the development difficulty. In addition, by providing the transistor assembly including at least two transistors, the voltage range that can be tolerated is widened, so as to be suitable for various application occasions such as high voltage and low voltage, and the safety and reliability of the chip corresponding to the IPM provided by the application are improved.

[0184] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example" or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

[0185] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limiting the present application, and the person skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application.

Claims

1. An intelligent power module, characterized by The intelligent power module comprises: a micro control unit (MCU), at least one high voltage integrated circuit (HVIC), and at least one transistor assembly, the MCU is connected with all the HVICs, and each of the HVICs is connected with a corresponding transistor assembly; wherein, the transistor assembly comprises at least two transistors, and the transistors are metal-oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs); the HVIC comprises a low dropout linear regulator (LDO) and a diode, and the upper bridge arm and the lower bridge arm of each of the HVICs are connected with one of the transistors in the corresponding transistor assembly, respectively; the MCU is configured to control the connection mode of the transistors in the transistor assembly; the MCU is further configured to: obtain a bus voltage of a motor; obtain a target transistor corresponding to each of the transistor assemblies according to the bus voltage, and connect the target transistor; the MCU is further configured to: select any one of the transistors as the target transistor when the bus voltage is less than a bus voltage threshold; or select at least two of the transistors as the target transistors and connect the target transistors in series when the bus voltage is greater than or equal to the bus voltage threshold.

2. The intelligent power module according to claim 1, characterized in that the MCU is further configured to: obtain a sensor control strategy; connect a detection path between a motor and a sensor according to the sensor control strategy.

3. The intelligent power module according to claim 2, characterized in that the MCU is further configured to: connect the detection path between the motor and a back electromotive force signal detection unit when the sensor control strategy is a sensor control strategy, and perform sensor sine wave control on the motor; or disconnect the detection path between the motor and the sensor when the sensor control strategy is a sensorless control strategy, and perform sensorless square wave control or sensorless sine wave control on the motor.

4. The intelligent power module according to claim 1, characterized in that The intelligent power module further comprises a temperature detection unit configured to: obtain a first current and a second current; obtain a temperature of the intelligent power module according to the first current and the second current.

5. The intelligent power module according to claim 4, characterized in that The temperature detection unit is further configured to: obtain a ratio of the first current and the second current; obtain a base emitter voltage (VBE) difference of a diode between the first current and the second current according to the ratio; obtain the temperature according to the VBE difference.

6. The intelligent power module according to any one of claims 1 to 5, characterized in that The diode is a fast recovery diode (FRD).

7. A control device, characterized by The intelligent power module comprises: a motor and the intelligent power module according to any one of claims 1-6.

8. The control device according to claim 7, characterized by The intelligent power module is installed in the motor or outside the motor.

9. A chip, characterized by The intelligent power module comprises: the intelligent power module according to any one of claims 1-6.

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