Display panel and mobile terminal

Abstract

This application discloses a display panel and a mobile terminal. The display panel includes a substrate and a thin-film transistor layer. The thin-film transistor layer includes an active layer located in a non-transparent region and a dimming layer disposed on the side of the active layer away from the substrate. The orthogonal projection of the dimming layer on the substrate covers the orthogonal projection of the active layer on the substrate. The dimming layer includes a unit layer, which includes a first sub-layer and a second sub-layer stacked together. The first sub-layer and the second sub-layer have different refractive indices. The unit layer causes the peaks or troughs of the first reflected light reflected after passing through the first sub-layer and the second reflected light reflected after passing through the second sub-layer to overlap. This application effectively reduces the impact of light frequently reflected and refracted between the array substrate and the color filter substrate on the IGZO when using IGZO as the active layer, prevents the IGZO from generating photogenerated carrier current under light irradiation, and improves the stability of the threshold voltage of the thin-film transistor device in the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a mobile terminal. Background Art

[0002] Compared with the current mainstream a-Si liquid crystal display (LCD) panel with an active layer, the use of indium gallium zinc oxide (IGZO) as the material for the active layer has great advantages. For example, IGZO has good visible light transparency, high electron mobility, and high switching current ratio. At the same time, IGZO can be used to make flexible display panels. The display panels made by IGZO have good uniformity and low production cost.

[0003] In LCD, light is frequently reflected and refracted in the various film layers between the array substrate and the color filter substrate, causing the light to shine on the IGZO active layer. Since IGZO is greatly affected by light, it is easy to generate photogenerated carriers to form current under light irradiation, causing the threshold voltage of the thin film transistor to drift, affecting the off-state characteristics of the thin film transistor and causing functional abnormalities in the panel. Summary of the invention

[0004] The embodiments of the present application provide a display panel and a mobile terminal, which can effectively reduce the influence of light frequently reflected and refracted in various film layers between an array substrate and a color filter substrate on the IGZO active layer when IGZO is used as an active layer, prevent IGZO from generating photogenerated carriers to form current under the irradiation of light, and improve the stability of the threshold voltage of the thin film transistor device in the display panel.

[0005] An embodiment of the present application provides a display panel, including a display area, wherein the display area includes a light-transmitting sub-area and a non-light-transmitting sub-area, and the display panel includes:

[0006] substrate;

[0007] A thin film transistor layer, disposed on the substrate, the thin film transistor layer comprising an active layer located in the non-light-transmitting sub-region;

[0008] The thin film transistor layer further comprises a dimming layer disposed on a side of the active layer away from the substrate, the dimming layer is located in the non-light-transmitting sub-region, and the orthographic projection of the dimming layer on the substrate at least partially covers the orthographic projection of the active layer on the substrate;

[0009] The dimming layer includes at least one unit layer, which adjusts the optical path of part of the light incident from the side of the unit layer away from the active layer. The unit layer includes a stacked first sublayer and a second sublayer, and the crests or troughs of the first reflected light reflected by the first sublayer and the second reflected light reflected by the second sublayer overlap.

[0010] Optionally, the dimming layer includes one of the unit layers, the first sublayer and the second sublayer have different refractive indices, the first sublayer has a thickness ranging from 60 nm to 80 nm, and the second sublayer has a thickness ranging from 70 nm to 140 nm.

[0011] Optionally, the dimming layer includes at least two stacked unit layers, and in each of the unit layers, the thickness of the first sublayer is in the range of 60 nm to 80 nm, and the thickness of the second sublayer is in the range of 70 nm to 100 nm.

[0012] Optionally, the refractive index of the first sublayer and the second sublayer are both greater than or equal to 1.5.

[0013] Optionally, the display panel further includes a wiring layer located in the non-light-transmitting sub-region, and the orthographic projection of the dimming layer on the substrate at least partially covers the orthographic projection of the wiring layer on the substrate.

[0014] Optionally, the thickness of the dimming layer ranges from 0um to 3um.

[0015] Optionally, the material of the first sub-layer includes silicon nitride, and the material of the second sub-layer includes silicon oxide.

[0016] Optionally, the thin film transistor layer includes an insulating layer arranged on the substrate and an organic protective layer arranged on the side of the insulating layer away from the substrate. In the light-transmitting sub-region, the insulating layer includes a first material layer and a second material layer stacked in sequence on the substrate, and the first material layer and the second material layer have different refractive indices. The insulating layer adjusts the optical path of part of the light emitted to the light-transmitting sub-region so that the optical path difference between the third reflected light reflected after passing through the first material layer and the fourth reflected light reflected after passing through the second material layer is equal to an odd multiple of half the wavelength.

[0017] Optionally, the insulating layer also includes a third material layer arranged on the second material layer, the third material layer and the first material layer are made of the same material, and the optical path difference between the fifth reflected light reflected after passing through the third material layer and the fourth reflected light reflected after passing through the second material layer is equal to an odd multiple of half the wavelength.

[0018] Optionally, the thickness of the third material layer is in the range of 240 nm to 300 nm, the thickness of the second material layer is in the range of 360 nm to 400 nm, and the thickness of the first material layer is in the range of 120 nm to 160 nm.

[0019] Optionally, the material of the first material layer includes silicon nitride, and the material of the second material layer includes silicon oxide.

[0020] Optionally, in the non-light-transmitting sub-region, the dimming layer is disposed between the insulating layer and the organic protective layer.

[0021] The present application also provides a mobile terminal, comprising the display panel and a terminal body as described in any one of the above embodiments, wherein the terminal body and the display panel are combined into one.

[0022] The beneficial effects of the present invention include at least:

[0023] The present invention provides a dimming layer on an active layer, wherein the dimming layer includes at least one unit layer, wherein the unit layer includes a first sublayer and a second sublayer stacked together, wherein the first sublayer and the second sublayer have different refractive indices, and the unit layer adjusts the optical path of part of the light incident from the side of the unit layer away from the active layer, so that the crests or troughs of the first reflected light reflected after passing through the first sublayer and the second reflected light reflected after passing through the second sublayer overlap, so that when the light is irradiated toward the active layer, the light reflected after passing through different sublayers of the unit layer is constructively interfered through the interference adjustment of the dimming layer, thereby increasing the reflectivity of the unit layer and reducing the refractive index of the unit layer, so that part of the light is reflected after passing through the dimming layer, reducing the intensity of the light passing through the dimming layer to irradiate the active layer, preventing IGZO from generating photogenerated carriers to form current under illumination, and further improving the stability of the threshold voltage of the thin film transistor device in the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 is a top view of the structure of a display panel provided in an embodiment of the present application;

[0026] Figure 2 A schematic diagram of the film layer structure of a display panel provided in an embodiment of the present application;

[0027] Figure 3 A schematic diagram of the structure of a dimming layer in a display panel provided in an embodiment of the present application;

[0028] Figure 4 A schematic diagram of constructive interference between a first reflected light and a second reflected light on a unit layer in a dimming layer provided in an embodiment of the present application;

[0029] Figure 5 A schematic diagram of the film layer structure of the thin film transistor layer in the light-transmitting sub-region provided in an embodiment of the present application;

[0030] Figure 6 A schematic diagram of the destructive interference of the third reflected light and the fourth reflected light in the insulating layer provided in an embodiment of the present application;

[0031] Figure 7 A schematic diagram of the film layer structure of a thin film transistor layer in a light-transmitting sub-region provided in another embodiment of the present application;

[0032] Figure 8 A schematic diagram of destructive interference between a third reflected light and a fourth reflected light in an insulating layer provided in another embodiment of the present application;

[0033] Fig. 9 A curve relationship diagram between the total thickness and transmittance of the insulating layer when irradiated with white light is provided in another embodiment of the present application. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0035] The present application provides a display panel and a mobile terminal. The following is a detailed description. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels, and no numerical requirements or order are imposed. Various embodiments of the present invention may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity, and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which are applicable regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any quoted numbers (fractions or integers) within the indicated range.

[0036] Compared with the current mainstream LCD with a-Si as the active layer, IGZO is favored by manufacturers because of its great advantages. For example, IGZO has good visible light transparency, high electron mobility, high switching current ratio, and IGZO can be used to make flexible display panels. The display panels made by IGZO have good uniformity and low production cost.

[0037] In LCD, light is frequently reflected and refracted in the various film layers between the array substrate and the color filter substrate, causing the light to shine on the active layer made of IGZO. Since IGZO is greatly affected by light, it is easy to generate photogenerated carriers to form current under light irradiation, causing the threshold voltage of the thin film transistor to drift, affecting the off-state characteristics of the thin film transistor and causing functional abnormalities in the panel.

[0038] In order to solve the above technical problems, the present application provides the following technical solutions, please refer to the following embodiments for details.

[0039] The present application embodiment provides a display panel, such as Figures 1 to 4 As shown, Figure 1 is a top view of the structure of a display panel, wherein the display panel comprises a display area, wherein the display area comprises a light-transmitting sub-area A1 and a non-light-transmitting sub-area A2;

[0040] It should be noted that in this embodiment, the display panel is described by taking LCD as an example.

[0041] Specifically, the light-transmitting sub-area A1 mainly corresponds to the pixel area of ​​the display panel, and the non-light-transmitting sub-area A2 mainly corresponds to the thin film transistors and the metal wiring 203;

[0042] Specifically, in the LCD display panel, the display panel also includes a backlight module, which is used to provide backlight. The light generated by the backlight module passes through the array substrate and is frequently reflected and refracted in various film layers between the array substrate and the color film substrate. Part of the light will irradiate the active layer 202 and the metal wiring 203.

[0043] The display panel comprises:

[0044] Substrate 10;

[0045] Specifically, the substrate 10 may be made of glass or polyimide. The thin film transistor layer 20 is formed on the substrate 10 , and the substrate 10 plays a supporting role.

[0046] A thin film transistor layer 20 is disposed on the substrate 10, and the thin film transistor layer 20 includes an active layer 202 located in the non-light-transmitting sub-region A2;

[0047] Specifically, the thin film transistor layer 20 includes a plurality of thin film transistors, and the plurality of thin film transistors control the deflection of liquid crystals through data voltages, thereby controlling the brightness of pixels.

[0048] Specifically, Figure 2 As shown, the thin film transistor layer includes a gate layer 201 arranged on the substrate 10, a gate insulating layer 2191 arranged on the gate layer 201, an active layer 202 arranged on the gate insulating layer 2191, a wiring layer arranged on the active layer 202, a first insulating layer 2192 arranged on the wiring layer, an organic protection layer 204 arranged on the first insulating layer 2192, a common voltage wiring layer 208 arranged on the organic protection layer 204, and a second insulating layer 206 arranged on the common voltage wiring layer 208, and a pixel electrode 207 is arranged on the second insulating layer 206, and part of the pixel electrode 207 passes through the multi-layer film layer and is electrically connected to the metal wiring 203 in the wiring layer on the active layer 202.

[0049] Specifically, the materials of the first insulating layer 2192 and the second insulating layer 206 include silicon nitride and silicon oxide, and the materials of the common voltage wiring layer 208 and the pixel electrode 207 may be transparent conductive materials, such as indium tin oxide (ITO).

[0050] The thin film transistor layer 20 further includes a dimming layer 205 disposed on a side of the active layer 202 away from the substrate 10, the dimming layer 205 is located in the non-light-transmitting sub-region A2, and the orthographic projection of the dimming layer 205 on the substrate 10 at least partially covers the orthographic projection of the active layer 202 on the substrate 10;

[0051] Specifically, the dimming layer 205 is used to reflect part of the light incident from the side away from the active layer 202. The dimming layer 205 is arranged above the active layer 202 and covers the active layer 202. In this embodiment, the dimming layer 205 can be arranged between the first insulating layer 2192 and the organic protective layer 204. However, the dimming layer 205 of the present application is not limited to being arranged between the first insulating layer 2192 and the organic protective layer 204. As long as it is arranged above the active layer 202 and can reflect part of the light shining on the active layer 202, it is within the protection scope of the present application.

[0052] Specifically, the structure of the dimming layer 205 can be a plane, or can be formed as follows: Figure 2 The cross section shown is a cap-like structure, which can further protect the active layer 202 and reduce the intensity of light irradiating the active layer 202 .

[0053] The dimming layer 205 includes at least one unit layer 2051, and the unit layer 2051 adjusts the optical path of part of the light incident from the side of the unit layer 2051 away from the active layer 202. The unit layer 2051 includes a stacked first sublayer 2051a and a second sublayer 2051b, and the peaks or troughs of the first reflected light S1 reflected by the first sublayer 2051a and the second reflected light S2 reflected by the second sublayer 2051b overlap.

[0054] Specifically, the first sublayer 2051a and the second sublayer 2051b have different refractive indices.

[0055] Specifically, Figure 3 As shown, the structure of the dimming layer 205 includes at least one unit layer 2051, and each unit layer 2051 includes a stacked first sublayer 2051a and a second sublayer 2051b, and the first sublayer 2051a and the second sublayer 2051b both have a relatively large refractive index, which may be above 1.5. For example, the material used for the first sublayer 2051a and the second sublayer 2051b may be a combination of any two of silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON), wherein the refractive index of SiOx is about 1.5, the refractive index of SiNx is 1.8-2.0, and the refractive index of SiON is 1.5-1.8. The combination of two materials with large refractive indices is suitable for this embodiment and is within the protection scope of this application;

[0056] Specifically, there is no specific limit on the number of unit layers 2051 in the dimming layer 205, but the more unit layers 2051 there are in the dimming layer 205, the stronger the ability of the dimming layer 205 to reflect light is, the lower the transmittance is, and the stability of the TFT device in the display panel can be improved.

[0057] For example, when the first sublayer 2051a and the second sublayer 2051b are made of SiNx and SiOx respectively to form the unit layer 2051, when the thickness of SiNx is 60nm to 80nm, the thickness of SiOx is in the range of 70nm to 140nm (when the unit layer 2051 in the dimming layer 205 is multi-layer, the thickness of SiOx is in the range of 70nm to 100nm), the unit layer 2051 constitutes the dimming layer 205, when the number of layers of the unit layer 2051 in the dimming layer 205 is a single layer, the transmittance of the display panel is less than 90%, and when the dimming layer 205 When the number of unit layers 2051 in the middle layer 205 is two, the transmittance of the display panel is less than 75%; when the number of unit layers 2051 in the dimming layer 205 is three, the transmittance of the display panel is less than 55%; when the number of unit layers 2051 in the dimming layer 205 is four, the transmittance of the display panel is less than 43%. It can be seen from the above data that the more unit layers 2051 there are, the better the reflective effect of the dimming layer 205 and the lower the transmittance, which can prevent light from irradiating the active layer 202 to cause the threshold voltage of the thin film transistor to drift, thereby improving the stability of the thin film transistor.

[0058] Specifically, Figure 4 As shown, in order to better reflect incident light, the thickness of the first sublayer 2051a and the second sublayer 2051b in the unit layer 2051 needs to satisfy a certain relationship, such as Figure 4 As shown, when light is irradiated onto the unit layer 2051, the incident light generates a first reflected light S1 after passing through the first sub-layer 2051a, and the incident light generates a second reflected light S2 after passing through the second sub-layer 2051b. The first sub-layer 2051a and the second sub-layer 2051b are made of different materials and have different refractive indices. By controlling the thickness of the second sub-layer 2051b, the second reflected light S2 reflected after the incident light passes through the second sub-layer 2051b can interfere constructively with the first reflected light S1, thereby further enhancing the intensity of the reflected light of the unit layer 2051, improving the reflectivity of the unit layer 2051, and reducing the transmittance of the unit layer 2051.

[0059] Specifically, the thickness of the second sublayer 2051b needs to satisfy the formula

[0060] Wherein, d is the thickness of the second sublayer 2051b, m is an integer (can be 1, 2, 3, 4, 5...), n is the refractive index of the material of the second sublayer 2051b, and λ is the wavelength of the incident light when it passes through the first sublayer 2051a and enters the second sublayer 2051b.

[0061] It should be noted that, from a macroscopic perspective, the incident light can be mixed white light (white light is mixed light without a specific wavelength value, but white light has a corresponding spectrum). When white light irradiates the first sublayer 2051a of the unit layer 2051, it has corresponding reflected light (spectrum) and corresponding refracted light (spectrum). When the material of the first sublayer 2051a is fixed, the material used for the second sublayer 2051b is fixed, and only the thickness of the second sublayer 2051b is adjusted. The transmittance of white light passing through the unit layer 2051 can show a curve change, that is, it has the highest transmittance and the lowest transmittance. When the lowest transmittance is taken, the thickness of the first sublayer 2051a and the second sublayer 2051b satisfy the constructive interference relationship.

[0062] Specifically, taking the first sublayer 2051a and the second sublayer 2051b as examples of materials respectively using SiNx and SiOx, due to the structure of the thin film transistor layer 20, the thickness of each film layer needs to be within an appropriate range. Therefore, the SiNx thickness is defined as 1nm to 100nm, and the SiOx thickness can obtain an optimal value (at this value, the transmittance of the unit layer 2051 is the lowest) based on the constructive interference relationship. Then, with this thickness as the first item and 180nm as the tolerance, multiple thickness values ​​obtained in the form of an arithmetic progression all meet the requirements.

[0063] For example:

[0064] When the SiNx thickness is 50nm, the corresponding SiOx thickness is 80nm+180n;

[0065] When the SiNx thickness is 70nm, the corresponding SiOx thickness is 65nm+180n;

[0066] When the thickness of SiNx is 100 nm, the corresponding thickness of SiOx is 50 nm+180n; wherein n is an integer greater than or equal to 0.

[0067] Specifically, limited by the structure of the thin film transistor layer 20, the thickness of the dimming layer 205 ranges from 0 to 3 um, and the thickness of the dimming layer 205 is at least greater than 0.

[0068] It should be noted that when the dimming layer 205 has multiple unit layers 2051, the thickness of the first sublayer 2051a in each unit layer 2051 can be the same or different. When the thickness of each first sublayer 2051a is equal or in an arithmetic progression (without changing the optical path of the incident light), each second sublayer 2051b can constructively interfere with the light reflected by any first sublayer 2051a. However, when the thickness of each first sublayer 2051a is unequal or does not form an arithmetic progression (which will change the optical path of the incident light), the first sublayer 2051a can only constructively interfere with the light reflected by the corresponding second sublayer 2051b.

[0069] It can be understood that, by arranging the dimming layer 205 on the active layer 202, the dimming layer 205 includes at least one unit layer 2051, the unit layer 2051 includes a first sublayer 2051a and a second sublayer 2051b stacked, the first sublayer 2051a and the second sublayer 2051b have different refractive indices, and the unit layer 2051 adjusts the optical path of part of the light incident from the side of the unit layer 2051 away from the active layer 202, so that the first reflected light S1 reflected after passing through the first sublayer 2051a and the second reflected light S2 reflected after passing through the second sublayer 2051b are The peaks or troughs overlap, so that when the light is irradiated to the active layer 202, the interference adjustment of the dimming layer 205 causes constructive interference between the light reflected after passing through different sub-layers of the unit layer 2051, thereby increasing the reflectivity of the unit layer 2051 and reducing the refractive index of the unit layer 2051, so that part of the light is reflected after passing through the dimming layer 205, reducing the intensity of the light passing through the dimming layer 205 to the active layer 202, preventing IGZO from generating photogenerated carriers to form current under the irradiation of light, and further improving the stability of the threshold voltage of the thin film transistor device in the display panel.

[0070] In one embodiment, the dimming layer 205 includes a unit layer 2051, the first sublayer 2051a and the second sublayer 2051b have different refractive indices, the first sublayer 2051a has a thickness ranging from 60 to 80 nm, and the second sublayer 2051b has a thickness ranging from 70 nm to 140 nm.

[0071] Specifically, the thickness of the first sublayer 2051a may be 60 nm, or any one of 65 nm, 68 nm, 70 nm, 72 nm, 75 nm, 78 nm or 80 nm, and may be adjusted according to actual production needs.

[0072] Specifically, the thickness of the second sublayer 2051b can be 70nm, or any one of 75nm, 78nm, 80nm, 86nm, 88nm, 92nm, 114nm, 114nm, and 140nm, and can be adjusted according to actual production needs.

[0073] It is understandable that when the dimming layer 205 is provided with only one unit layer 2051, it can reflect part of the light directed to the active layer 202, thereby preventing the threshold voltage of the thin film transistor from drifting to a certain extent. Meanwhile, the total thickness of the thin film transistor layer 20 is low and the structure is light and thin.

[0074] In one embodiment, the dimming layer 205 includes at least two stacked unit layers 2051 , and in each unit layer 2051 , the thickness of the first sublayer 2051 a is in the range of 60 nm to 80 nm, and the thickness of the second sublayer 2051 b is in the range of 70 nm to 100 nm.

[0075] Specifically, the thickness of the first sublayer 2051a may be 60 nm, or any one of 65 nm, 68 nm, 70 nm, 72 nm, 75 nm, 78 nm or 80 nm, and may be adjusted according to actual production needs.

[0076] Specifically, the thickness of the second sublayer 2051b can be 70 nm, or any one of 75 nm, 78 nm, 80 nm, 86 nm, 88 nm, 92 nm, and 100 nm, and can be adjusted according to actual production needs.

[0077] It can be understood that when the dimming layer 205 is provided with multiple unit layers 2051 overlapping each other, it can reflect most of the light directed to the active layer 202, prevent the threshold voltage of the thin film transistor from drifting, and improve the stability of the thin film transistor.

[0078] In one embodiment, the refractive indexes of the first sub-layer 2051a and the second sub-layer 2051b are both greater than or equal to 1.5.

[0079] Specifically, the material used for the first sublayer 2051a and the second sublayer 2051b can be a combination of any two of silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON), wherein the refractive index of SiOx is about 1.5, the refractive index of SiNx is 1.8 to 2.0, and the refractive index of SiON is 1.5-1.8.

[0080] On the basis of the above embodiments, the dimming layer 205 reflects part of the light directed to the active layer 202. When the light is further reflected and refracted frequently in the various film layers between the array substrate and the color film substrate, the metal wiring 203 in the wiring layer or the active layer 202 will absorb the undivided light, causing the light to be lost inside the panel, thereby reducing the transmittance of the panel and further reducing the energy efficiency of the panel. In order to further solve the above problems, the following embodiments are provided based on the above embodiments.

[0081] In one embodiment, if Figure 1 and Figure 2 As shown, the display panel further includes a wiring layer located in the non-light-transmitting sub-area A2 , and the orthographic projection of the dimming layer 205 on the substrate 10 at least partially covers the orthographic projection of the wiring layer on the substrate 10 .

[0082] Specifically, the routing layer includes multiple metal routings 203. Since a dimming layer 205 is provided on the active layer 202, a dimming layer 205 can also be provided on the metal routings 203 of the routing layer, so as to avoid the metal routings 203 absorbing light to a certain extent, thereby improving the transmittance of the display panel and improving the energy efficiency of the display panel.

[0083] Specifically, the dimming layer 205 includes a first dimming unit and a second dimming unit, wherein the orthographic projection of the first dimming unit on the substrate 10 covers the orthographic projection of the active layer 202 on the substrate 10 , and the orthographic projection of the second dimming unit on the substrate 10 covers the orthographic projection of the routing layer on the substrate 10 .

[0084] Specifically, the first dimming unit and the second dimming unit have the same structure and can be formed by the same process, which can further simplify the manufacturing steps of the display panel and improve the relevant performance of the display panel.

[0085] Specifically, the material of the metal wiring 203 in the wiring layer may be at least one of molybdenum, aluminum, titanium, lithium, tungsten, copper and silver.

[0086] It can be understood that by arranging the dimming layer 205 on the wiring layer, the dimming layer 205 includes at least one unit layer 2051, the unit layer 2051 includes a first sublayer 2051a and a second sublayer 2051b stacked, the first sublayer 2051a and the second sublayer 2051b have different refractive indices, and the unit layer 2051 adjusts the optical path of part of the light incident from the side of the unit layer 2051 away from the wiring layer, so that the first reflected light S1 reflected after passing through the first sublayer 2051a and the second reflected light S2 reflected after passing through the second sublayer 2051b are The peaks or troughs of the incident light S2 overlap, so that when the light is irradiated onto the wiring layer, the interference adjustment of the dimming layer 205 makes the light reflected after passing through different sub-layers of the unit layer 2051 constructively interfere, thereby increasing the reflectivity of the unit layer 2051 and reducing the refractive index of the unit layer 2051, so that part of the light is reflected after passing through the dimming layer 205, which to a certain extent avoids the metal wiring 203 in the wiring layer from absorbing part of the light, thereby improving the energy efficiency of the display panel, reducing the internal friction of the light between the film layers of the display panel, and increasing the transmittance of the display panel.

[0087] In one embodiment, if Figure 5 and Figure 6As shown, the thin film transistor layer 20 includes an insulating layer 209 arranged on the substrate 10, and an organic protective layer 204 arranged on the side of the insulating layer 209 away from the substrate 10. In the light-transmitting sub-area A1, the insulating layer 209 includes a first material layer 2091 and a second material layer 2092 stacked in sequence on the substrate 10, and the first material layer 2091 and the second material layer 2092 have different refractive indices. The insulating layer 209 adjusts the optical path of part of the light emitted to the light-transmitting sub-area A1 so that the optical path difference between the third reflected light S3 reflected after passing through the first material layer 2091 and the fourth reflected light S4 reflected after passing through the second material layer 2092 is equal to an odd multiple of half the wavelength.

[0088] Specifically, in this embodiment, the dimming layer 205 is disposed in the non-transparent sub-region A2, and the dimming layer 205 is not disposed in the transparent sub-region A1. In order to further increase the transmittance of the display panel, the film structure of the insulating layer 209 needs to be optimized.

[0089] Specifically, the first material layer 2091 includes silicon nitride, the second material layer 2092 includes silicon oxide, and the refractive index of the material of the organic protection layer 204 is close to the refractive index of silicon oxide.

[0090] It should be noted that the insulating layer 209 is a stack of a first insulating layer 2192 and a gate insulating layer 2191 in terms of structure, and the material of the first insulating layer 2192 is the second material layer 2092 in this embodiment, and the material of the gate insulating layer 2191 is a stack of silicon nitride and silicon oxide. Figure 5 As shown, in the light-transmitting sub-region A1, a gate insulating layer 2191 is formed on the substrate 10, and the gate insulating layer 2191 is arranged in a manner of a first material layer 2091 arranged on the substrate 10, and a second material layer 2092 arranged on the first material layer 2091, and a first insulating layer 2192 is formed on the gate insulating layer 2191, and the first insulating layer 2192 is arranged in a manner of a second material layer 2092 arranged on the gate insulating layer 2191, and the organic protective layer 204 is arranged on the first insulating layer 2192, and the gate insulating layer 2191 and the second material layer 2092 of the first insulating layer 2192 are contacted and stacked, so from the material point of view, the structure of the insulating layer 209 is a first material layer 2091 and a second material layer 2092 sequentially arranged on the substrate 10;

[0091] Specifically, in order to make the display panel of the light-transmitting sub-area A1 have better light transmittance, the thickness of the first material layer 2091 and the second material layer 2092 are adjusted, and the thickness between the first material layer 2091 and the second material layer 2092 needs to satisfy a certain relationship, such as Figure 6As shown, in this embodiment, the material of the first material layer 2091 is silicon nitride, and the material of the second material layer 2092 is silicon oxide. When light is irradiated onto the insulating layer 209, the light generates a third reflected light S3 after passing through the first material layer 2091, and generates a fourth reflected light S4 after passing through the second material layer 2092. The materials of the first material layer 2091 and the second material layer 2092 are different, and the refractive indexes are different. When the thickness of the first material layer 2091 is fixed, by controlling the thickness of the second material layer 2092, the third reflected light S3 reflected after passing through the first material layer 2091 can interfere with the fourth reflected light S4 reflected after passing through the second material layer 2092, thereby reducing the intensity of the reflected light of the insulating layer 209, thereby reducing the reflectivity of the insulating layer 209 and improving the transmittance of the insulating layer 209.

[0092] Specifically, the thickness of the second material layer 2092 needs to satisfy the formula

[0093] Wherein, d is the thickness of the second material layer 2092 , m is an integer (can be 1, 2, 3, 4, 5…), n is the refractive index of the material of the second material layer 2092 , and λ is the wavelength of the incident light when passing through the second material layer 2092 .

[0094] It should be noted that, from a macroscopic point of view, the light passing through the insulating layer 209 can be mixed white light (white light is mixed light without a specific wavelength value, but white light has a corresponding spectrum). When the white light irradiates the first material layer 2091, it has corresponding reflected light (spectrum) and corresponding refracted light (spectrum). When the material of the first material layer 2091 is fixed, the material used in the second material layer 2092 is fixed, and only the thickness of the second material layer 2092 is adjusted, the transmittance of the insulating layer 209 can be changed in a curve, such as Fig. 9 As shown, it has the highest transmittance and the lowest transmittance. When the highest transmittance is taken, the thickness of the first material layer 2091 and the second material layer 2092 satisfy the destructive interference relationship.

[0095] Specifically, in the light-transmitting sub-area A1, a large amount of light needs to be transmitted. In the structure of the thin-film transistor layer 20 of the present embodiment, the material of the first material layer 2091 is SiNx, and the material of the second material layer 2092 is SiOx. When the thickness of the first material layer 2091 is set to 2000A~5000A, adjusting the thickness of the second material layer 2092 can obtain an optimal transmittance value. The second material layer 2092 corresponding to the optimal transmittance value has multiple thickness values ​​(the multiple thickness values ​​change in an arithmetic progression), and the thickness value and the thickness value of the first material layer 2091 satisfy the interference destructive relationship.

[0096] For example: when the SiNx thickness is set to 300nm, the SiOx thickness is 20nm+180n, where n in "180n" is an integer greater than or equal to 0.

[0097] Specifically, the thickness of the second material layer 2092 (SiOx) is in the range of 360 nm to 400 nm, and the thickness of the first material layer 2091 (SiNx) is in the range of 120 nm to 160 nm.

[0098] It can be understood that by setting the insulating layer 209 to include a first material layer 2091 and a second material layer 2092, and by adjusting the thickness relationship between the first material layer 2091 and the second material layer 2092, light can interfere and destructively interact after passing through the insulating layer 209, thereby reducing the intensity of the reflected light of the insulating layer 209, thereby reducing the reflectivity of the insulating layer 209, and increasing the transmittance of the insulating layer 209, thereby improving the transmittance of the display panel.

[0099] In one embodiment, the insulating layer 209 also includes a third material layer 2093 disposed on the second material layer 2092, the third material layer 2093 and the first material layer 2091 are made of the same material, and the optical path difference between the fifth reflected light S5 reflected after passing through the third material layer 2093 and the fourth reflected light reflected after passing through the second material layer 2092 is equal to an odd multiple of half the wavelength.

[0100] Specifically, Figure 7 As shown, the insulating layer 209 is structurally a stack of a first insulating layer 2192 and a gate insulating layer 2191, and the materials of the first insulating layer 2192 and the gate insulating layer 2191 are a combined stack of silicon nitride and silicon oxide. In the light-transmitting sub-region A1, a gate insulating layer 2191 is formed on the substrate 10, and the gate insulating layer 2191 is arranged in a manner of a first material layer 2091 arranged on the substrate 10, a second material layer 2092 arranged on the first material layer 2091, a first insulating layer 2192 is formed on the gate insulating layer 2191, and the arrangement of the first insulating layer 2192 The method is as follows: a second material layer 2092 is arranged on the gate insulating layer 2191, and a third material layer 2093 is arranged on the second material layer 2092. The first material layer 2091 and the third material layer 2093 are made of the same material. The organic protection layer 204 is arranged on the first insulating layer 2192. The gate insulating layer 2191 and the second material layer 2092 of the first insulating layer 2192 are contacted and stacked. Therefore, from the perspective of materials, the structure of the insulating layer 209 is the first material layer 2091, the second material layer 2092, and the third material layer 2093 which are sequentially arranged on the substrate 10;

[0101] Specifically, in order to make the display panel of the light-transmitting sub-area A1 have better light transmittance, the thicknesses of the first material layer 2091, the second material layer 2092 and the third material layer 2093 are adjusted, and the thicknesses of the first material layer 2091 and the second material layer 2092, and the thicknesses of the second material layer 2092 and the third material layer 2093 need to satisfy a certain relationship, such as Figure 8 As shown, in this embodiment, the first material is silicon nitride, the second material is silicon oxide, and the third material is silicon nitride. When light is irradiated onto the insulating layer 209, the light generates a third reflected light S3 after passing through the first material layer 2091, generates a fifth reflected light after passing through the third material layer 2093, and generates a fourth reflected light S4 after passing through the second material layer 2092. The materials of the first material layer 2091 and the second material layer 2092 are different, and the refractive index is different. When the thickness of the first material layer 2091 is fixed, by controlling the thickness of the second material layer 2092, The third reflected light S3 reflected after the light passes through the first material layer 2091 can interfere and destructively with the fourth reflected light S4 reflected after passing through the second material layer 2092. When the thickness of the second material layer 2092 is fixed, the corresponding thickness of the third material layer 2093 can also be obtained, so that the fifth reflected light reflected after the light passes through the third material layer 2093 can interfere and destructively with the fourth reflected light S4 reflected after passing through the second material layer 2092, thereby achieving the effect of reducing the intensity of the reflected light of the insulating layer 209, reducing the reflectivity of the insulating layer 209, and improving the transmittance of the insulating layer 209.

[0102] It can be understood that by setting the insulating layer 209 to include a first material layer 2091, a second material layer 2092 and a third material layer 2093, and by adjusting the thickness relationship between the first material layer 2091 and the second material layer 2092, and the thickness relationship between the second material layer 2092 and the third material layer 2093, light can be destructively interfered after passing through the insulating layer 209, thereby reducing the intensity of the reflected light of the insulating layer 209, thereby reducing the reflectivity of the insulating layer 209, and increasing the transmittance of the insulating layer 209, thereby improving the transmittance of the display panel.

[0103] In one embodiment, the thickness of the third material layer 2093 is in the range of 240 nm to 300 nm, the thickness of the second material layer 2092 is in the range of 360 nm to 400 nm, and the thickness of the first material layer 2091 is in the range of 120 nm to 160 nm.

[0104] Specifically, when the thickness of the third material layer 2093 (SiNx) is 240nm~300nm, the thickness of the second material layer 2092 (SiOx) is 360nm~400nm, and the thickness of the first material layer 2091 (SiNx) is 120nm~160nm, the single-plate transmittance of the thin film transistor layer 20 is greater than 84%, which exceeds the average level of the current prior art.

[0105] In one embodiment, in the non-light-transmitting sub-region A2 , the dimming layer 205 is disposed between the insulating layer 209 and the organic protective layer 204 .

[0106] Specifically, the insulating layer 209 can be entirely disposed in the display area, and the thickness of the third material layer 2093 or the second material layer 2092 in the insulating layer 209 can be adjusted by etching in the light-transmitting sub-area A1, so that the transmittance of the insulating layer 209 reaches a maximum value, further enhancing the transmittance of the display panel.

[0107] The present application also provides a mobile terminal, comprising the display panel and a terminal body as described in any one of the above embodiments, wherein the terminal body and the display panel are combined into one.

[0108] In summary, the present invention arranges a dimming layer 205 on the active layer 202, the dimming layer 205 includes at least one unit layer 2051, the unit layer 2051 includes a first sublayer 2051a and a second sublayer 2051b stacked, the first sublayer 2051a and the second sublayer 2051b have different refractive indices, and the unit layer 2051 adjusts the optical path of a portion of light incident from the side of the unit layer 2051 away from the active layer 202, so that the peaks or peaks of the first reflected light S1 reflected after passing through the first sublayer 2051a and the second reflected light S2 reflected after passing through the second sublayer 2051b are The valley phases overlap, so that when the light is irradiated to the active layer 202, the light reflected by the different sub-layers of the unit layer 2051 is adjusted by the interference of the dimming layer 205, so that the light interference is constructive, thereby increasing the reflectivity of the unit layer 2051 and reducing the refractive index of the unit layer 2051, so that the light is partially reflected after passing through the dimming layer 205, thereby reducing the light intensity of the light passing through the dimming layer 205 to the active layer 202, to a certain extent preventing the IGZO from generating photogenerated carriers to form current under the irradiation of light, and further improving the stability of the threshold voltage of the thin film transistor device in the display panel;

[0109] Secondly, the present invention also avoids the metal routing 203 absorbing the light between the array substrate and the color filter layer by arranging a dimming layer 205 on the routing layer, thereby improving the energy efficiency of the display panel and reducing the internal friction of light between the film layers of the display panel. The thickness relationship between the first material layer 2091 and the second material layer 2092, and the second material layer 2092 and the third material layer 2093 in the insulating layer 209 is adjusted in the transparent sub-area A1, so that the third reflected light S3 and the fourth reflected light S4 generated after the light passes through the insulating layer 209 interfere with each other, and the fifth reflected light S5 and the fourth reflected light S4 interfere with each other, thereby reducing the reflectivity of the insulating layer 209 and increasing the refractive index of the insulating layer 209. The overall transmittance of the display panel is improved by the above-mentioned technical means.

[0110] The above is a detailed introduction to a display panel and a mobile terminal provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: The display panel includes a display area, wherein the display area includes a light-transmitting sub-area and a non-light-transmitting sub-area. The display panel includes: substrate; A thin film transistor layer, disposed on the substrate, the thin film transistor layer comprising an active layer located in the non-light-transmitting sub-region; The thin film transistor layer further comprises a dimming layer disposed on a side of the active layer away from the substrate, the dimming layer is located in the non-light-transmitting sub-region, and the orthographic projection of the dimming layer on the substrate at least partially covers the orthographic projection of the active layer on the substrate; The dimming layer includes at least one unit layer, which adjusts the optical path of part of the light incident from the side of the unit layer away from the active layer. The unit layer includes a stacked first sublayer and a second sublayer, and the crests or troughs of the first reflected light reflected by the first sublayer and the second reflected light reflected by the second sublayer overlap.

2. The display panel according to claim 1, wherein: The dimming layer includes a unit layer, the first sublayer and the second sublayer have different refractive indices, the first sublayer has a thickness ranging from 60 nm to 80 nm, and the second sublayer has a thickness ranging from 70 nm to 140 nm.

3. The display panel according to claim 1, wherein: The dimming layer includes at least two stacked unit layers. In each of the unit layers, the thickness of the first sublayer is in the range of 60 nm to 80 nm, and the thickness of the second sublayer is in the range of 70 nm to 100 nm.

4. The display panel according to claim 1, wherein: The refractive indexes of the first sublayer and the second sublayer are both greater than or equal to 1.

5.

5. The display panel according to claim 1, wherein: The display panel further includes a wiring layer located in the non-light-transmitting sub-region, and the orthographic projection of the dimming layer on the substrate at least partially covers the orthographic projection of the wiring layer on the substrate.

6. The display panel according to claim 1, wherein: The thickness of the dimming layer is in the range of greater than 0 and less than or equal to 3 μm.

7. The display panel according to claim 1, wherein: The material of the first sub-layer includes silicon nitride, and the material of the second sub-layer includes silicon oxide.

8. The display panel according to claim 1, wherein: The thin film transistor layer includes an insulating layer arranged on the substrate and an organic protective layer arranged on the side of the insulating layer away from the substrate. In the light-transmitting sub-area, the insulating layer includes a first material layer and a second material layer stacked in sequence on the substrate, and the first material layer and the second material layer have different refractive indices. The insulating layer adjusts the optical path of part of the light emitted to the light-transmitting sub-area so that the optical path difference between the third reflected light reflected after passing through the first material layer and the fourth reflected light reflected after passing through the second material layer is equal to an odd multiple of half the wavelength.

9. The display panel according to claim 8, wherein: The insulating layer also includes a third material layer arranged on the second material layer, the third material layer and the first material layer are made of the same material, and the optical path difference between the fifth reflected light reflected after passing through the third material layer and the fourth reflected light reflected after passing through the second material layer is equal to an odd multiple of half the wavelength.

10. The display panel according to claim 9, wherein: The thickness of the third material layer is in the range of 240 nm to 300 nm, the thickness of the second material layer is in the range of 360 nm to 400 nm, and the thickness of the first material layer is in the range of 120 nm to 160 nm.

11. The display panel according to claim 8, wherein: The material of the first material layer includes silicon nitride, and the material of the second material layer includes silicon oxide.

12. The display panel according to claim 8, wherein: In the non-light-transmitting sub-region, the dimming layer is disposed between the insulating layer and the organic protective layer.

13. A mobile terminal, characterized in that: It comprises the display panel and the terminal body as claimed in any one of claims 1 to 12, wherein the terminal body and the display panel are combined into one body.

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