A high power density general purpose power electronic module based on sic modules

Abstract

The application provides a high-power-density general power electronic module based on a SiC module, which can reduce design cost, ensure overall system reliability, simplify system structure and improve operability of the whole system, and can be applied to a high-power power electronic converter. A detection circuit and a control circuit are integrated on a PCB to form a detection control board, a DC busbar and a DC filter capacitor are arranged on the detection control board, the DC busbar adopts a double-layer laminated busbar, the DC filter capacitor is connected with a DC+ copper bar and a DC-copper bar of the DC busbar respectively, and the detection control board is integrated with a communication interface; the SiC module is arranged on a heat dissipation system, a source electrode of the SiC module is connected with the DC+ copper bar, a drain electrode of the SiC module is connected with the DC-copper bar, a SiC module half-bridge is connected with an AC side terminal, a GS end of the SiC module is connected with a driving circuit through a corresponding pin, and a decoupling capacitor is arranged between the drain electrode and the source electrode of the SiC module.

Description

Technical Field

[0001] This invention relates to the field of transformer, rectifier and inductor manufacturing technology, specifically a high power density general power electronic module based on SiC modules. Background Technology

[0002] PEBB (Power Electronic Module Block) is a new type of power electronic device structure based on the standardization concept of power electronic converters. PEBB effectively addresses the shortcomings of traditional power electronic design, such as poor economic efficiency (requiring separate research into power semiconductor technology, main switch topology technology, and converter control technology, and considering the overall system performance after their integration, increasing labor costs); low reliability (the diverse combinations of the three technologies make pre-testing impossible, leading to unreliable overall system reliability); and complex structure (discrete designs may suffer from parasitic parameters such as inductance reducing device performance, and system heat dissipation and communication require redesign). Traditional power electronic design lacks standardization and interoperability between power electronic components and systems. This results in a lack of system integration, requiring specialized personnel for configuration and maintenance. PEBB promotes wider application of power electronics. Multiple general-purpose power electronic modules and magnetic components can be interconnected to form sub-modules of a power electronic converter.

[0003] Semiconductor devices made of silicon (Si), such as diodes, insulated-gate bipolar transistors (IGBTs), thyristors, and metal-oxide-semiconductor field-effect transistors (MOSFETs), have dominated the field of power electronics, forming a stable and mature technological foundation for reliable power electronic systems. Recently, semiconductor devices have begun to shift towards wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which offer significant advantages over their silicon counterparts. Compared to Si, SiC exhibits higher thermal conductivity, a higher breakdown critical electric field, a higher saturation electron drift velocity, and a lower intrinsic carrier concentration. Therefore, SiC devices are more suitable for high-power, high-frequency power electronic applications.

[0004] To date, some research has resulted in the design of general-purpose power electronic modules. However, these studies still have certain limitations. First, most of the currently developed general-purpose power electronic modules are based on Si devices, thus limiting the improvement of the overall PEBB power rating and power density, and restricting the commercial application of general-purpose power electronic modules. Second, devices using SiC devices operate at high frequencies. If Si devices are directly replaced with SiC devices in the original design, voltage overshoot caused by parasitic inductance in the commutation circuit may damage the device. Therefore, overall, the design of general-purpose power electronic modules is not yet very mature. Summary of the Invention

[0005] To address the problems existing in the prior art, this invention provides a high power density general-purpose power electronic module based on SiC modules, which can reduce design costs, ensure overall system reliability, simplify system structure, and improve the operability of the entire system. It can be applied to high-power power electronic converters.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] A high power density general-purpose power electronic module based on SiC module includes a DC filter capacitor, a detection circuit, a DC side busbar, a SiC module, a heat dissipation system, AC side terminals, a drive circuit, a control circuit, and a decoupling capacitor.

[0008] The detection circuit and control circuit are integrated on the PCB to form a detection control board. The DC side busbar and DC filter capacitor are set on the detection control board. The DC side busbar adopts a double-layer stacked busbar, which includes a DC+ copper busbar and a DC- copper busbar. The DC filter capacitor is connected to the DC+ copper busbar and the DC- copper busbar respectively. The information transmission end of the detection control board is connected to the drive circuit. The detection control board integrates a communication interface.

[0009] The SiC module is placed on the heat dissipation system. The source of the SiC module is connected to the DC+ copper busbar, the drain of the SiC module is connected to the DC- copper busbar, the half-bridge in the SiC module is connected to the AC side terminal, and the GS terminal of the SiC module is connected to the driving circuit through corresponding pins. The decoupling capacitor is placed between the drain and source of the SiC module.

[0010] Preferably, the DC-side busbar further includes an outer insulating layer and an inner insulating layer, wherein the outer insulating layer wraps around the outside of the DC+ copper busbar and the DC- copper busbar, and the inner insulating layer is placed between the DC+ copper busbar and the DC- copper busbar.

[0011] Preferably, a current sensor is fitted onto the DC+ connection terminal of the DC+ copper busbar.

[0012] Preferably, a nut washer is provided between the DC side busbar and the detection control board.

[0013] Preferably, the heat dissipation system uses a heat sink, the SiC module is placed on the heat sink, the outer shell of the SiC module is in contact with the heat sink, and the heat sink includes a ventilation channel with cooling fans on both sides of the ventilation channel.

[0014] Preferably, the DC filter capacitor is composed of multiple thin-film capacitors connected in parallel.

[0015] Preferably, the DC+ copper busbar and DC- copper busbar are hollowed out to meet the electrical insulation and creepage distance requirements of the DC side busbar.

[0016] Preferably, the AC side terminal includes an AC side terminal insulating layer and an AC side terminal copper busbar, wherein the AC side terminal insulating layer is wrapped around the outside of the AC side terminal copper busbar.

[0017] Preferably, the AC side terminal is connected to the midpoint of the half-bridge within the SiC module via screws.

[0018] Preferably, the SiC module is a SiC MOSFET half-bridge module, and the SiC MOSFET half-bridge module adopts an economual packaging structure.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] This invention provides a high-power-density general-purpose power electronic module based on SiC modules. This module integrates a DC filter capacitor, detection circuit, DC-side busbar, SiC module, heat dissipation system, AC-side terminals, drive circuit, control circuit, and communication interface. While achieving basic PEBB (Power-to-Bridge) functionality, the use of SiC modules instead of conventional Si devices significantly improves the power rating of the general-purpose power electronic module. Furthermore, the module integrates a double-layer DC-side busbar, decoupling capacitors, and a heat dissipation system, and features a characteristic design for each integrated component, ensuring stable operation of SiC devices at high power and preventing damage from voltage overshoot caused by parasitic inductance in the direct commutation circuit. The rational layout of the components allows the general-purpose power electronic module to meet high-power application requirements while reducing its size. In addition, this invention can be connected to other general-purpose power electronic modules or passive components in the system via DC-side and AC-side connection terminals, offering high scalability and allowing it to be assembled as a full-bridge module into power electronic converters of any topology. The design scheme described in this invention reduces design costs, ensures overall system reliability, simplifies system structure, and improves the operability of the entire system, and can be applied to high-power power electronic converters. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the general power electronic module circuit of the present invention;

[0022] Figure 2 This is a schematic diagram of the general power electronic module structure of the present invention;

[0023] Figure 3 This is an exploded view of the universal power electronic module of the present invention after the detection and control board has been removed;

[0024] Figure 4 This is an exploded schematic diagram of the DC-side busbar stack of the present invention;

[0025] Figure 5 This is a schematic diagram of the structural dimensions of the general power electronic module of the present invention.

[0026] In the diagram, 1-DC filter capacitor, 2-DC+ connection terminal, 3-DC- connection terminal, 4-current sensor, 5-detection control board, 6-DC side busbar, 7-SiC module, 8-heat sink, 9-cooling fan, 10-drive circuit, 11-AC side terminal, 12-AC1 connection terminal, 13-AC2 connection terminal, 14-communication interface, 15-decoupling capacitor, 16-m6 nut washer, 17-first outer insulation layer, 18-DC+ copper busbar, 19-inner insulation layer, 20-DC- copper busbar, 21-second outer insulation layer. Detailed Implementation

[0027] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0028] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0029] The present invention will now be described in further detail with reference to the accompanying drawings:

[0030] The present invention discloses a high power density general-purpose power electronic module based on SiC module, including DC filter capacitor 1, detection circuit, DC side bus 6, SiC module 7, heat dissipation system, AC side terminal 11, drive circuit 10, control circuit and decoupling capacitor 15.

[0031] The detection circuit and control circuit are integrated on the PCB to form a detection control board 5. The DC side bus 6 and DC filter capacitor 1 are set on the detection control board 5. The DC side bus 6 adopts a double-layer stacked bus. The DC side bus 6 includes a DC+ copper bus 18 and a DC- copper bus 20. The DC filter capacitor 1 is connected to the DC+ copper bus 18 and the DC- copper bus 20 respectively. The information transmission end of the detection control board 5 is connected to the drive circuit 10. The detection control board 5 integrates a communication interface 14.

[0032] The SiC module 7 is placed on the heat dissipation system. The source of the SiC module 7 is connected to the DC+ copper busbar 18, the drain of the SiC module 7 is connected to the DC- copper busbar 20, the half-bridge inside the SiC module 7 is connected to the AC side terminal 11, and the GS terminal of the SiC module 7 is connected to the drive circuit 10 through corresponding pins. The decoupling capacitor 15 is placed between the drain and source of the SiC module 7.

[0033] This invention provides a high-power-density general-purpose power electronic module based on SiC modules. It integrates the DC filter capacitor 1, power devices, AC output terminals, heat dissipation system, drive circuit 10, detection circuit, and control circuit from a traditional DC-DC converter into a single unit. The module integrates the DC filter capacitor 1, detection circuit, DC-side busbar 6, SiC module 7, heat dissipation system, AC-side terminals 11, drive circuit 10, control circuit, and communication interface 14. While still achieving basic PEBB functions, it uses SiC module 7 instead of conventional Si devices, significantly improving the power rating of the general-purpose power electronic module. Furthermore, the module integrates a double-layer DC-side busbar 6, decoupling capacitor 15, and heat dissipation system, and features a characteristic design for each integrated component within the module structure, ensuring the performance of the SiC module. The stable operation of the device at high power avoids damage to the device due to voltage overshoot caused by parasitic inductance in the commutation circuit. The rational layout of the components allows the universal power electronic module of this invention to meet the requirements of high-power applications while reducing its size. Furthermore, this invention can be connected to other universal power electronic modules or passive components in the system via DC-side and AC-side connection terminals, offering high scalability. It can be assembled as a full-bridge module into power electronic converters of any topology. The design scheme of this invention reduces design costs, ensures overall system reliability, simplifies system structure, and improves the operability of the entire system, making it applicable to high-power power electronic converters.

[0034] This invention uses SiC half-bridge modules as power devices, effectively improving the transmission power and operating frequency of general-purpose power electronic modules. To ensure that SiC devices do not break down due to overvoltage during high-speed switching, this solution uses multilayer busbars instead of traditional wires or single-layer copper busbars, reducing the parasitic inductance of the device's commutation circuit and ensuring the reliable operation of the SiC devices. Furthermore, this solution uses optical fibers for signal transmission and interaction with the system's main controller, improving the reliability of signal transmission and avoiding the signal instability caused by electromagnetic interference in traditional analog signal transmission lines.

[0035] The DC-side busbar 6 further includes an outer insulation layer and an inner insulation layer 19. The outer insulation layer wraps around the outside of the DC+ copper busbar 18 and the DC- copper busbar 20, and the inner insulation layer 19 is placed between the DC+ copper busbar 18 and the DC- copper busbar 20.

[0036] A current sensor 4 is fitted onto the DC+ connection terminal 2 of the DC+ copper busbar 18.

[0037] A nut washer 16 is provided between the DC side busbar 6 and the detection control board 5.

[0038] The heat dissipation system uses a heat sink 8, and the SiC module 7 is placed on the heat sink 8. The outer shell of the SiC module 7 is attached to the heat sink 8. The heat sink 8 includes a ventilation channel, and cooling fans 9 are placed on both sides of the ventilation channel.

[0039] The DC filter capacitor 1 is composed of multiple thin-film capacitors connected in parallel.

[0040] The DC+ copper busbar 18 and DC- copper busbar 20 are hollowed out to meet the electrical insulation and creepage distance requirements of the DC side busbar 6.

[0041] The AC side terminal 11 includes an AC side terminal insulation layer and an AC side terminal copper busbar, wherein the AC side terminal insulation layer is wrapped around the outside of the AC side terminal copper busbar.

[0042] Example

[0043] This embodiment provides a high power density general-purpose power electronic module based on SiC modules, including:

[0044] DC filter capacitor 1, detection circuit, DC side busbar 6, SiC module 7, heat dissipation system, AC side terminal 11, drive circuit 10, control circuit, communication interface 14, decoupling capacitor 15, and m6 nut and washer.

[0045] The general-purpose power electronic module described in this embodiment has a voltage rating of 1200V, a current rating of 100A, a power rating of 120kW, and an operating frequency of 10kHz.

[0046] The DC filter capacitor 1 is composed of three 1800V and 90μF film capacitors connected in parallel. The entire DC filter capacitor network has a withstand voltage of 1700V and a capacitance of 270μF.

[0047] The detection circuit includes the detection of PEBB DC side current, DC side voltage, and SiC module 7 temperature.

[0048] The DC side busbar 6 is designed as a double-layer stacked busbar, which includes two outer insulation layers, one inner insulation layer 19, one DC+ copper busbar 18 and one DC- copper busbar 20.

[0049] The SiC module 7 is selected from two SiC MOSFET half-bridge modules with a withstand voltage of 1700V, and the package structure is selected from the econodual package structure.

[0050] The heat dissipation system includes one aluminum profile heat sink and four DC cooling fans.

[0051] The AC side terminal 11 is designed as two single-layer copper busbars, including one outer insulation layer and one copper busbar.

[0052] The drive circuit 10 selects two 1700V SiC MOSFET half-bridge drivers, and each half-bridge driver provides a drive signal to one SiC MOSFET half-bridge module.

[0053] The communication interface 14 is selected as an optical fiber communication interface, which is connected to the main controller of the converter through optical fiber.

[0054] The decoupling capacitor 15 is selected from two surface-mount capacitors with a voltage rating of 1700V and a capacitance of 66nF, in order to reduce the parasitic inductance of the SiC MOSFET commutation circuit.

[0055] Furthermore, the DC filter capacitor 1 is electrically and mechanically connected to the DC+ copper busbar 18 and DC- copper busbar 20 of the busbar via screws.

[0056] Furthermore, the detection circuit and control circuit are integrated on a single PCB to form a detection control board 5. This detection control board 5 is electrically and mechanically connected to the DC filter capacitor 1 and the DC-side busbar 6 via screws, detecting the voltage between the DC+ connection terminal 2 and the DC- connection terminal 3. A separate current sensor 4 is used for current detection, directly fitted onto the DC+ connection terminal 2 to detect the DC-side current. The detection and control board should also integrate the communication interface 14, allowing the general-purpose power electronic module to interact with the system's main controller. The detection and control board is connected to the driver board via a transmission line, sending PWM waves to the driver board.

[0057] Furthermore, the DC-side busbar 6 should be designed to be as wide and short as possible to reduce parasitic inductance. Two outer insulating layers are respectively wrapped around the outside of the DC+ copper busbar 18 or the DC- copper busbar 20, serving as insulation from the outside; one inner insulating layer 19 is placed between the DC+ copper busbar 18 or the DC- copper busbar 20, serving as insulation between the stacked copper busbars. For the DC+ copper busbar 18, its DC+ connection terminal 2 is bent downwards so that the current sensor can be directly fitted onto the DC+ connection terminal 2. In addition, to ensure that the internal insulation and creepage distance of the stacked busbar meet the requirements, the DC+ copper busbar 18 is hollowed out and recessed, the inner insulating layer 19 is filled, and the DC- copper busbar 20 is hollowed out.

[0058] Furthermore, the sources of both SiC modules 7 are electrically and mechanically connected to the DC+ copper busbar 18 of the DC-side busbar 6 via screws; the drains of both modules are electrically and mechanically connected to the DC- copper busbar 20 of the DC-side busbar 6 via screws; the midpoints of the half-bridges within the two SiC modules 7 are electrically and mechanically connected to the two AC-side terminals 11 via screws. The GS terminals of the two SiC modules are electrically and mechanically connected to the drive circuit 10 via corresponding pins.

[0059] Furthermore, the heat sink 8 uses an aluminum profile heat sink, and the SiC module 7 is placed on the heat sink 8 so that the SiC shell is in close contact with the heat sink 8. The four cooling fans 9 are respectively placed on both sides of the ventilation channel of the heat sink 8, with one side blowing air inward and the other side drawing air inward.

[0060] Furthermore, the AC side terminal 11 can be connected to external magnetic components or other PEBBs via wires. The outer insulating layer wraps around the copper busbar of the AC side terminal 11, serving to insulate it from external sources.

[0061] Furthermore, the two decoupling capacitors 15 are respectively placed between the drain and source terminals of the two SiC modules 7.

[0062] Furthermore, the m6 nut washer 16 is placed between the DC side busbar 6 and the detection and control board, physically separating the detection and control board and the DC side busbar 6 by a distance.

[0063] like Figure 1 The diagram shows the circuit schematic of the general-purpose power electronic module designed in this invention. The DC filter capacitor 1 primarily functions to regulate and filter the input or output voltage. The detection circuit mainly detects the DC current, DC voltage, and SiC module. The DC side busbar 6 replaces the wires connecting the DC filter capacitor 1 to the module, reducing the parasitic inductance of the SiC MOSFET commutation circuit. The SiC module uses two half-bridge SiC MOSFET modules to form a full-bridge circuit. This invention integrates a heat dissipation system to prevent thermal breakdown of the SiC module due to excessive temperature during operation. The AC side terminals are connected to the AC signal of the H-bridge, requiring connection to other external modules or magnetic components. The drive circuit uses two half-bridge SiC MOSFETs to send drive signals to the SiC module, controlling its on / off state. The control circuit generates a PWM wave based on the sampled signal and the desired operating requirements, sending it to the drive circuit. The communication interface primarily transmits signals to the main controller of the power electronic converter system. The main controller can send control signals corresponding to its operating process to each PEBB to achieve system functions.

[0064] like Figure 2 , 3 As shown in Figure 4, the DC filter capacitor 1 is composed of three 1800V, 90μF film capacitors connected in parallel, forming a DC filter capacitor network with a withstand voltage of 1700V and a capacitance of 270μF. The DC filter capacitor 1 is placed side-by-side under the DC side busbar 6 and electrically and mechanically connected to the DC+ copper busbar 18 and DC- copper busbar 20 of the busbar via screws. The DC+ connection terminal 2 and DC- connection terminal 3 are led out from the DC+ copper busbar 18 and DC- copper busbar 20 of the DC side busbar, respectively. The DC+ connection terminal 2 is designed with a downward bend so that the current sensor 4 can be directly fitted onto the DC+ connection terminal 2 to detect the DC current.

[0065] The detection control board 5 integrates detection and control circuits. The detection circuits include voltage, current, and temperature detection circuits. The voltage detection circuit directly extracts DC voltage from the DC+ copper busbar 18 and DC- copper busbar 20, while the current detection circuit extracts DC current through the current sensor 4. The control circuit also integrates a communication interface 14, allowing the general-purpose power electronic module to interact with the system's main controller. The detection control board 5 is electrically connected to the drive circuits 10 of the two SiC modules 7 via wires. The detection control board 5 requires the drive circuits 10 to transmit PWM waves to control the MOSFET operation.

[0066] like Figure 4 As shown, to minimize the parasitic inductance of the converter circuit, the DC-side busbar 6 should be designed to be sufficiently wide and short. Therefore, the width of the DC-side busbar 6 is designed to be the maximum width of the entire module, and the length is as short as possible while meeting the connection requirements. The DC-side busbar 6 adopts a stacked design, which includes two outer insulation layers, namely the first outer insulation layer 17 and the second outer insulation layer 21. The first outer insulation layer 17 is placed on the DC+ copper busbar 18, and the second outer insulation layer 21 is placed below the DC- copper busbar 20. Both outer insulation layers serve to insulate against the outside. One inner insulation layer 19 is placed between the DC+ copper busbar 18 and the DC- copper busbar, providing insulation between the two copper busbars with a maximum potential difference of 1200V. There are two copper busbars, namely the DC+ copper busbar 18 and the DC- copper busbar 20, which are connected to the DC+ potential and the DC- potential respectively, serving as conductors to carry current. Furthermore, the busbars feature specialized insulation designs for each layer, including a recessed and sunken design for the DC+ copper busbar 18, a filled design for the inner insulation layer 19, and a recessed design for the DC- copper busbar 20. This ensures that the internal creepage distance and insulation distance meet requirements when the withstand voltage reaches 1200V and the conduction current reaches 100A, while also facilitating the connection of the DC filter capacitor 1. Additionally, the DC-side busbar 6 is placed between the DC filter capacitor 1 and the SiC module 7. The DC+ copper busbar is connected to the drain of the two SiC modules 7, and the DC- copper busbar is connected to the source of the two SiC modules 7.

[0067] The advantage of double-layer laminated busbars lies in the fact that not only do individual copper busbars within the busbar have self-inductance, but there is also a considerable mutual inductance between the copper busbars. Since the currents flowing through the two layers of copper busbars are in opposite directions, this mutual inductance can cancel out the self-inductance of the individual copper busbars, thereby reducing the total inductance of the busbar. The total inductance of a laminated busbar can be expressed as:

[0068]

[0069] In the formula, L busbar L represents the parasitic inductance of the converter circuit section in the busbar. DC+This indicates the self-inductance of DC + copper busbar 18, L DC- M represents the self-inductance of DC-copper busbar 20, and M represents the mutual inductance between DC+copper busbar 18 and DC-copper busbar 20. After verification, the busbar L... DC+ =29.72nH, L DC- =29.31nH, M=20.57nH, then L busbar =17.89nH, the parasitic inductance of this bus converter circuit is small, ensuring the reliable operation of SiC module 7.

[0070] In this invention, the SiC module 7 uses two 1700V SiC MOSFET half-bridge modules with an econo dual package structure. This package structure facilitates the integrated design of the overall module and has a low junction-to-case thermal resistance, which is beneficial for heat dissipation. The heat dissipation system includes an aluminum profile heat sink 8 and four DC cooling fans 9. The cooling fans 9 are fixed to both sides of the ventilation channel of the heat sink 8 with screws, blowing air inward on one side and drawing air inward on the other. The SiC module 7 is placed on the heat sink 8, ensuring that the casing of the SiC module 7 is in close contact with the heat sink 8 for sufficient heat dissipation. The drive circuit 10 is directly connected to the SiC module 7, and each half-bridge drive circuit 10 provides a drive signal to one SiC MOSFET half-bridge module. The midpoint of the half-bridge of the SiC module 7 is connected to the AC side terminal 11. One module's AC side terminal 11 leads to the AC1 connection terminal 12, and the other module's AC side terminal 11 leads to the AC2 connection terminal 13. The AC side terminal 11 is designed as two single-layer copper busbars, including one outer insulating layer and one copper busbar. The outer insulating layer wraps around the outside of the AC side terminal copper busbar, serving to insulate it from the outside. The invented PEBB can be connected to external magnetic components or other PEBBs via wires through the AC1 connection terminal 12 and the AC2 connection terminal 13.

[0071] To further reduce the parasitic inductance during the commutation process of SiC devices, a 1700V, 66nF surface-mount capacitor is placed between the drain and source of each of the two SiC modules 7 as a decoupling capacitor 15. Additionally, an extra m6 nut washer 16 is provided and placed between the DC-side busbar 6 and the detection control board 5. Its main function is to physically separate the detection control board 5 and the DC-side busbar 6, improving the insulation strength of the device while providing space for components to be placed on the back of the detection control board 5.

[0072] like Figure 5 The diagram shows the structural dimensions of the high power density universal power electronic module of this invention. The key dimensions of the universal power electronic module of this invention are: length 385mm, width 336mm, height 160mm, and volume approximately 0.021m³. 3Its rated power can reach 120kW, and its power density is as high as 5714kW / m³. 3 This achieves high power density.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the protection scope of the claims of the present invention.

Claims

1. A high power density general-purpose power electronic module based on SiC modules, characterized in that, It includes a DC filter capacitor (1), a detection circuit, a DC side busbar (6), a SiC module (7), a heat dissipation system, an AC side terminal (11), a drive circuit (10), a control circuit, and a decoupling capacitor (15); The detection circuit and control circuit are integrated on the PCB to form a detection control board (5). The DC side busbar (6) and DC filter capacitor (1) are set on the detection control board (5). The DC side busbar (6) adopts a double-layer stacked busbar. The DC side busbar (6) includes a DC+ copper busbar (18) and a DC- copper busbar (20). The DC filter capacitor (1) is connected to the DC+ copper busbar (18) and the DC- copper busbar (20) respectively. The information transmission end of the detection control board (5) is connected to the drive circuit (10). The detection control board (5) integrates a communication interface (14). The SiC module (7) is placed on the heat dissipation system. The source of the SiC module (7) is connected to the DC+ copper busbar (18), the drain of the SiC module (7) is connected to the DC- copper busbar (20), the half-bridge in the SiC module (7) is connected to the AC side terminal (11), the GS terminal of the SiC module (7) is connected to the drive circuit (10) through the corresponding pin, and the decoupling capacitor (15) is placed between the drain and source of the SiC module (7). The DC side busbar (6) also includes an outer insulation layer and an inner insulation layer (19), wherein the outer insulation layer wraps around the outside of the DC+ copper busbar (18) and the DC- copper busbar (20), and the inner insulation layer (19) is placed between the DC+ copper busbar (18) and the DC- copper busbar (20); The DC+ copper busbar (18) and DC- copper busbar (20) are hollowed out to meet the electrical insulation and creepage distance requirements of the DC side busbar (6); The heat dissipation system uses a radiator (8), the SiC module (7) is placed on the radiator (8), the outer shell of the SiC module (7) is attached to the radiator (8), the radiator (8) includes a ventilation channel, and cooling fans (9) are placed on both sides of the ventilation channel; The DC filter capacitor (1) is composed of multiple thin film capacitors connected in parallel; The AC side terminal (11) includes an AC side terminal insulation layer and an AC side terminal copper busbar, wherein the AC side terminal insulation layer is wrapped around the outside of the AC side terminal copper busbar.

2. A high power density general-purpose power electronic module based on SiC modules according to claim 1, characterized in that, A current sensor (4) is fitted onto the DC+ connection terminal (2) of the DC+ copper busbar (18).

3. A high power density general-purpose power electronic module based on SiC modules according to claim 1, characterized in that, A nut washer (16) is provided between the DC side busbar (6) and the detection control board (5).

4. A high power density general-purpose power electronic module based on SiC modules according to claim 1, characterized in that, The AC side terminal (11) is connected to the midpoint of the half-bridge in the SiC module (7) by screws.

5. A high power density general-purpose power electronic module based on SiC modules according to claim 1, characterized in that, The SiC module (7) adopts a SiC MOSFET half-bridge module, and the SiC MOSFET half-bridge module adopts the econo dual packaging structure.

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