Support unit, substrate processing equipment including the support unit, and temperature control method

Abstract

A supporting unit may include: a plurality of heaters, which are arranged in a matrix form in the supporting unit to heat a substrate; and a power supply unit, which is used to supply power to the plurality of heaters, wherein current applied to the plurality of heaters is controlled by switches respectively connected to rows and columns of the matrix, and the switches connected to the rows of the matrix include a first switch capable of controlling the current applied to the rows of the matrix and a second switch connected in parallel with the first switch.

Description

Technical Field

[0001] The present invention relates to a support unit, a substrate processing apparatus including the support unit, and a temperature control method. More particularly, the present invention relates to a heater included in the support unit and a temperature control method using a switch structure connected to the heater. Background Art

[0002] In the case of a temperature control method using a conventional micro heater, a method of sensing a voltage and a current of a heater to be targeted and calculating a resistance value of each heater from the sensed values ​​to adjust an output power to be applied to the heater is used.

[0003] In the case of a matrix structure using a conventional micro heater, a configuration not including a diode is used and a circuit structure is simply provided. However, there is a problem that it is difficult to accurately measure the current of the target heater due to the current of the heater adjacent to the target heater, and thus the temperature control of the target heater is inaccurate. Summary of the invention

[0004] The present invention is directed to accurately controlling the temperature in a specific targeted heater zone among a plurality of heaters.

[0005] The problems to be solved by the present invention are not limited to the above-mentioned problems. Those skilled in the art will clearly understand the unmentioned problems through this specification and the accompanying drawings.

[0006] An exemplary embodiment of the present invention provides a supporting unit.

[0007] The support unit may include: a plurality of heaters, which are arranged in a matrix form in the support unit to heat the substrate; and a power supply unit, which is used to supply power to the plurality of heaters, wherein current applied to the plurality of heaters is controlled by switches respectively connected to rows and columns of the matrix, and the switches connected to the rows of the matrix include a first switch capable of controlling the current applied to the rows of the matrix and a second switch connected in parallel with the first switch.

[0008] In an exemplary embodiment, one end of the second switch may be connected in parallel with one end of the first switch, and the other end of the second switch may be grounded.

[0009] In an exemplary embodiment, the first switch and the second switch may be connected to each row of the matrix, respectively.

[0010] In an exemplary embodiment, the supporting unit may further include third switches respectively connected to the columns of the matrix.

[0011] In an exemplary embodiment, the supporting unit may further include a control unit for controlling on / off of the first switch, the second switch, and the third switch.

[0012] In an exemplary embodiment, the control unit may connect the first switch of the row connected to the target heater and the third switch of the column connected to the target heater to measure the current of the target heater included in the matrix.

[0013] In an exemplary embodiment, the control unit may control the second switches of the other rows that are not connected to the target heater to be connected.

[0014] In an exemplary embodiment, the control unit may control any one of the first switch and the second switch connected to each of the plurality of rows included in the matrix to be connected.

[0015] In an exemplary embodiment, the control unit may control only one of the first switches corresponding to the number of the plurality of rows to be connected, and control the second switches in the remaining rows to be connected.

[0016] Another exemplary embodiment of the present invention provides a substrate processing apparatus.

[0017] The substrate processing equipment may include: a processing chamber having a processing space; a supporting unit, which supports the substrate in the processing space; a gas supply unit, which supplies a processing gas to the processing space; and a plasma source, which generates plasma from the processing gas, wherein the supporting unit may include a plurality of heaters, which are arranged in a matrix form in the supporting unit to heat the substrate; a power supply unit, which is used to supply power to the plurality of heaters, wherein current applied to the plurality of heaters is controlled by switches respectively connected to rows and columns of the matrix, and the switches connected to the rows of the matrix include a first switch capable of controlling the current applied to the rows of the matrix and a second switch connected in parallel with the first switch.

[0018] Yet another exemplary embodiment of the present invention provides a method of performing temperature control on a substrate using a supporting unit.

[0019] The method may include the following steps: selecting an area of ​​a heater to be controlled as a target heater; controlling a switch so that current flows only in the area of ​​the selected heater; measuring a current value flowing in the area of ​​the selected heater to check the temperature of the area of ​​the selected heater; and controlling the temperature of the area of ​​the selected heater.

[0020] In an exemplary embodiment, controlling the switches so that current flows only in the area of ​​the selected heater may be controlling a first switch of a row connected to the target heater to be connected and controlling a third switch of a column connected to the target heater to be connected.

[0021] In an exemplary embodiment, controlling the switches so that the current flows only in the area of ​​the selected heater may be that second switches of other rows not connected to the target heater are controlled to be connected.

[0022] In an exemplary embodiment, measuring a current value flowing in a region of the selected heater to check a temperature of the region of the selected heater may be performed by calculating a resistance value based on the measured current value to measure the temperature.

[0023] In an exemplary embodiment, controlling the temperature of the selected heater zone may include controlling the output power of the heater zone to be adjusted.

[0024] Another exemplary embodiment of the present invention provides a method of performing temperature control on a substrate using a supporting unit.

[0025] The method may include the following steps: setting a heater area whose temperature is to be controlled as a target heater and setting a target power of the target heater; controlling a switch so that current flows only in the selected heater area; measuring a current value flowing in the selected heater area to check the temperature of the selected heater area; and checking whether the temperature of the heater area is matched with the target power.

[0026] In an exemplary embodiment, the method may further include controlling the temperature of the heater zones by feedback control when the temperatures of the heater zones do not match.

[0027] According to the present invention, it is possible to measure the current in a desired target heater to calculate the temperature and perform closed-loop control to perform accurate temperature control.

[0028] The effects of the present invention are not limited to the aforementioned effects. Based on this specification and the accompanying drawings, those skilled in the art will clearly understand the effects not mentioned. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1A and Figure 1B is a diagram illustrating a schematic configuration of a chamber according to an exemplary embodiment of the present invention.

[0030] Figure 2 is a diagram illustrating a configuration of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0031] Figure 3is a diagram illustrating an exploded perspective view of a supporting unit according to an exemplary embodiment of the present invention.

[0032] Figure 4 is a diagram illustrating a structure of a heater matrix according to an exemplary embodiment of the present invention.

[0033] Figure 5 is a diagram for describing measuring a current of a target heater by controlling switches of a heater matrix according to an exemplary embodiment of the present invention.

[0034] Figure 6 An equivalent circuit for describing a current of a measurement target heater according to an exemplary embodiment of the present invention is shown.

[0035] Figure 7 is a flowchart illustrating a temperature control method according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0036] Hereinafter, exemplary embodiments of the present invention will be described more fully below with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. However, the present invention may be implemented differently and is not limited to the following exemplary embodiments. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein is omitted to avoid making the subject matter of the present invention unclear. In addition, for components with similar functions and effects, the same reference numerals are used throughout the accompanying drawings.

[0037] Unless explicitly described to the contrary, the term "comprising" any component will be understood to imply the inclusion of the stated elements but not the exclusion of any other elements. It should be understood that the terms "comprising" and "having" are intended to specify the existence of characteristics, quantities, steps, operations, constituent elements, and components or combinations thereof described in the specification, but do not exclude the possibility of the pre-existence or addition of one or more other characteristics, quantities, steps, operations, constituent elements, and components or combinations thereof.

[0038] Singular expressions used herein include plural expressions unless they have clearly opposite meanings in the context. Therefore, the shapes, sizes, etc. of elements in the drawings may be exaggerated for clearer description.

[0039] Terms such as first and second are used to describe various components, but the components are not limited by the terms. The terms are merely used to distinguish one component from another component. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component.

[0040] As used herein, a "unit" may refer to a hardware component such as software, an FPGA, or an ASIC as a unit for processing at least one function or operation. However, the meaning of a "unit" is not limited to software or hardware. A "unit" may be configured to be located on an addressable storage medium and may be configured to playback one or more processors.

[0041] As an example, "units" include components, such as software components, object-oriented software components, class components and task components, processes, functions, properties, procedures, subroutines, program code segments, drivers, firmware, microcode, circuits, data, databases, data structures, tables, arrays, and variables. The functions provided by components and 'units' can be performed by multiple components and 'units' separately, or can be integrated with other additional components.

[0042] Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The exemplary embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the exemplary embodiments described below. Exemplary embodiments will be provided to more fully describe the present invention to those skilled in the art. Therefore, the shapes of the components in the accompanying drawings, etc. will be exaggerated to emphasize a clearer description.

[0043] Figure 1A and Figure 1B is a diagram illustrating a schematic configuration of a chamber according to an exemplary embodiment of the present invention.

[0044] like Figure 1A and Figure 1B As shown, the plasma chamber 100 may include electrodes 110a and 110b to which RF signals are applied. The electrodes 110a and 110b may transmit electrical energy to the chamber so that the gas to be introduced into the chamber is ionized and becomes a plasma state. Figure 1A The electrodes 110a and 110b shown show an example of a capacitively coupled plasma (CCP) source, which is arranged so that two electrode plates in the chamber face each other. The CCP source can use a capacitive electric field to transfer electrical energy to electrons of a gas introduced into the chamber. The CCP source can have a form in which an RF power source is connected to the two electrode plates, but according to an exemplary embodiment, the RF power source can also be connected only to the upper electrode plate of the two electrode plates. Figure 1B The electrode 110c shown shows an example of an inductively coupled plasma (ICP) source, which is composed of an inductive coil wound outside the chamber 100. Since the plasma generating device is separately coupled to the upper part of the chamber, the ICP source can change the gas introduced into the chamber into a plasma state and provide the plasma to the chamber in a downstream method.

[0045] Figure 2is a diagram illustrating a configuration of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0046] refer to Figure 2 The substrate processing apparatus 10 processes the substrate S using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate S. The substrate processing apparatus 10 may include a chamber 100 , a substrate supporting unit 200 , a plasma generating unit 300 , a gas supply unit 400 , and a baffle unit 500 .

[0047] The chamber 100 may provide a processing space in which a substrate processing process is performed. The chamber 100 may have a processing space and the chamber 100 may be provided in a closed shape. The chamber 100 may be provided with a metal material. The chamber 100 may be provided with an aluminum material. The chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber 100. The exhaust hole 102 may be connected to an exhaust line 151. Reaction byproducts generated during the processing and gases remaining in the internal space of the chamber may be discharged to the outside via the exhaust line 151. The interior of the chamber 100 may be decompressed at a predetermined pressure by the exhaust process.

[0048] According to one example, a liner 130 may be provided in the chamber 100. The liner 130 may have a cylindrical shape with an open upper surface and a lower surface. The liner 130 may be provided to contact the inner surface of the chamber 100. The liner 130 protects the inner wall of the chamber 100 to prevent the inner wall of the chamber 100 from being damaged by arc discharge. In addition, impurities generated during the substrate processing process may be prevented from being deposited on the inner side wall of the chamber 100.

[0049] The substrate supporting unit 200 may be located inside the chamber 100. The substrate supporting unit 200 may support the substrate S. The substrate supporting unit 200 may include an electrostatic chuck 210 for adsorbing the substrate S using an electrostatic force. Different from this, the substrate supporting unit 200 may support the substrate S in various methods such as mechanical clamping. Hereinafter, the substrate supporting unit 200 including the electrostatic chuck 210 will be described.

[0050] The substrate supporting unit 200 may include an electrostatic chuck 210, a lower cover 250, and a plate 270. The substrate supporting unit 200 may be spaced apart from a bottom surface of the chamber 100 inside the chamber 100.

[0051] The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and a focusing ring 240. The electrostatic chuck 210 may support a substrate S. The dielectric plate 220 may be located at an upper end of the electrostatic chuck 210. The electrolyte plate 220 may be provided as a disk-shaped electrolyte substance. The substrate S may be placed on an upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 may have a smaller radius than the substrate S. Therefore, an edge area of ​​the substrate S may be located outside the dielectric plate 220.

[0052] A first electrode 223, a heater 225, and a first supply flow channel 221 may be included in the dielectric plate 220. The first supply flow channel 221 may be provided from the upper surface to the bottom surface of the electrolyte plate 210. A plurality of first supply flow channels 221 may be spaced apart from each other, and may be provided as a passage through which a heat transfer medium is supplied to the lower surface of the substrate S.

[0053] The first electrode 223 may be electrically connected to a first power source 223a. The first power source 223a may include a DC power source. The switch 223b may be provided between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by turning on / off the switch 223b. When the switch 223b is turned on, a direct current may be applied to the first electrode 223. An electrostatic force may be applied between the first electrode 223 and the substrate S by the current applied to the first electrode 223, and the substrate S may be adsorbed to the dielectric plate 220 by the electrostatic force. The heater 225 may be located in the lower portion of the first electrode 223. The heater 225 may be electrically connected to the second power source 225a. The heater 225 may generate heat by resisting the current applied to the second power source 225a. The generated heat may be transmitted to the substrate S through the dielectric plate 220. The substrate S may be maintained at a predetermined temperature by the heat generated in the heater 225. The heater 225 may include a spiral coil.

[0054] The body 230 may be located at the lower portion of the electrolyte plate 220. The lower surface of the dielectric plate 220 and the upper surface of the body 230 may be adhered to each other by an adhesive 236. The body 230 may be provided with an aluminum material. The upper surface of the body 230 may be stepped so that the central area is higher than the edge area. The central area of ​​the upper surface of the body 230 has an area corresponding to the lower surface of the dielectric plate 220 and may be adhered to the lower surface of the dielectric plate 220. A first circulation flow channel 231, a second circulation flow channel 232, and a second supply flow channel 233 may be formed in the body 230.

[0055] The first circulation flow channel 231 may be provided as a passage for circulating a heat transfer medium. The first circulation flow channel 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation flow channel 231 may be arranged so that annular flow channels with different radii have the same center. The corresponding first circulation flow channels 231 may be communicated with each other. The first circulation flow channels 231 may be formed at the same height.

[0056] The second circulating flow channel 232 may be provided as a passage for circulating cooling fluid. The second circulating flow channel 232 may be formed in a spiral shape inside the body 230. Alternatively, the second circulating flow channel 232 may be arranged so that annular flow channels with different radii have the same center. The corresponding second circulating flow channels 232 may be communicated with each other. The second circulating flow channel 232 may have a larger cross-sectional area than the first circulating flow channel 231. The second circulating flow channel 232 may be formed at the same height. The second circulating flow channel 232 may be located below the first circulating flow channel 231.

[0057] The second supply flow channel 233 extends upward from the first circulation flow channel 231 and may be provided as an upper surface of the body 230. The second supply flow channels 243 are provided in a number corresponding to the first supply flow channels 221 and may connect the first circulation flow channels 231 and the first supply flow channels 221 to each other.

[0058] The first circulation flow channel 231 may be connected to the heat transfer medium storage unit 231a via a heat transfer medium supply line 231b. The heat transfer medium may be stored in the heat transfer medium storage unit 231a. The heat transfer medium may include an inert gas. According to an exemplary embodiment, the heat transfer medium may include helium (He) gas. Helium is supplied to the first circulation flow channel 231 through the supply line 231b, and may be sequentially supplied to the lower surface of the substrate S through the second supply flow channel 233 and the first supply flow channel 221. Helium may be used as a medium for transferring heat transferred to the substrate S to the electrostatic chuck 210 in the form of plasma.

[0059] The second circulation flow channel 232 may be connected to the cooling fluid storage unit 232a via a cooling fluid supply line 232c. The cooling fluid may be stored in the cooling fluid storage unit 232a. The cooler 232b may be disposed in the cooling fluid storage unit 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Different from this, the cooler 232b may be disposed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation flow channel 232 by the cooling fluid supply line 232c may circulate along the second circulation flow channel 232 and cool the main body 230. The main body 230 may cool the dielectric plate 220 and the substrate S together when cooling to maintain the substrate S to a predetermined temperature.

[0060] The body 230 may include a metal plate. According to an exemplary embodiment, the entire body 230 may be provided as a metal plate. The body 230 may be electrically connected to the third power source 235a. The third power source 235a may be provided as a high-frequency power source for generating high-frequency power. The high-frequency power source may include an RF power source. The body 230 may receive high-frequency power from the third power source 235a. Therefore, the body 230 may be used as an electrode, that is, a lower electrode.

[0061] The ring member 240 may be disposed in an edge region of the electrostatic chuck 210. The ring member 240 has a circular ring shape and may be disposed along the circumference of the electrolyte plate 220. In particular, the ring member 240 may be composed of a plurality of rings including a focusing ring. In particular, the upper surface of the ring member 240 may be stepped so that the outer portion 240a is higher than the inner portion 240b. The inner portion 240b of the upper surface of the ring member 240 may be located at the same height as the upper surface of the dielectric plate 220. The inner portion 240b of the upper surface of the ring member 240 may support an edge region of the substrate S located outside the dielectric plate 220. The outer portion 240a of the ring member 240 may be disposed to surround an edge region of the substrate S. The ring member 240 may control the electromagnetic field so that the plasma density is uniformly distributed throughout the entire region of the substrate S. Therefore, the plasma may be uniformly formed across the entire region of the substrate S, so that the etching region of the substrate S may be uniformly etched.

[0062] The lower cover 250 may be located at the lower end of the substrate support unit 200. The lower cover 250 may be positioned to be spaced upward from the bottom surface of the chamber 100. The lower cover 250 may be formed with a space 255 in which an open upper surface is provided. The outer radius of the lower cover 250 may be set to have the same length as the outer radius of the main body 230. In the inner space 255 of the lower cover 250, a lifting pin module (not shown) or the like may be positioned, which moves the substrate S to be transferred from the external transfer member to the electrostatic chuck 210. The lifting pin module (not shown) may be positioned to be spaced apart from the lower cover 250 by a predetermined interval. The lower surface of the lower cover 250 may be provided with a metal material. The inner space 255 of the lower cover 250 may be provided with air. Since air has a lower dielectric constant than an insulator, air may be used to reduce the electromagnetic field inside the substrate support unit 200.

[0063] The lower cover 250 may have a connection member 253. The connection member 253 may connect the outer surface of the lower cover 250 and the inner wall of the chamber 100 to each other. A plurality of connection members 253 may be provided on the outer surface of the lower cover 250 at a plurality of intervals. The connection member 253 may support the substrate support unit 200 inside the chamber 100. In addition, the connection member 253 is connected to the inner wall of the chamber 100 so that the lower cover 250 is electrically grounded. A first power line 223c connected to the first power source 223a, a second power line 225c connected to the second power source 225a, a third power line 235c connected to the third power source 235a, a heat transfer medium supply line 231b connected to the heat transfer medium storage unit 231a, and a cooling fluid supply line 232c connected to the cooling fluid storage unit 232a, etc. may extend to the inside of the lower cover 250 through the inner space 255 of the connection member 253.

[0064] The plate 270 may be located between the electrostatic chuck 210 and the lower cover 250. The plate 270 may cover the upper surface of the lower cover 250. The plate 270 may be provided in a cross-sectional area corresponding to the body 230. The plate 270 may include an insulator. According to an exemplary embodiment, one or more plates 270 may be provided. The plate 270 may be used to increase the electrical distance between the body 230 and the lower cover 250.

[0065] The plasma generating unit 300 can excite the processing gas in the chamber 100 into a plasma state. The plasma generating unit 300 can use a capacitively coupled plasma type plasma source. When a CCP type plasma source is used, an upper electrode 330 and a lower electrode 230 (i.e., a body) can be included in the chamber 100. The upper electrode 330 and the lower electrode 230 can be arranged parallel to each other up and down, and the processing space is inserted between them. The upper electrode 330 and the lower electrode 230 can also receive energy for generating plasma by receiving an RF signal of the RF power supply 310, and the number of RF signals applied to each electrode is not limited to the number shown in the figure. An electric field is formed in the space between the two electrodes, and the processing gas supplied to the space can be excited into a plasma state. The substrate processing process is performed using the plasma. The CCP type described herein has been described, but is not limited thereto, and the plasma generating unit 300 can be configured as an inductively coupled plasma (ICP) type.

[0066] The plasma generating unit 300 may be provided with a gas dispersion plate. Although not shown in the figure, the gas dispersion plate may be provided to be spaced apart from the upper surface of the chamber 100 by a predetermined distance. The gas dispersion plate may be fixed by a support unit formed on the edge of the upper surface of the chamber 100. The gas dispersion plate may be provided in a plate shape having a constant thickness. The lower surface of the gas dispersion plate may be polarized to prevent arcing generated by the plasma. The cross-sectional area of ​​the gas dispersion plate may be provided to be the same as the cross-sectional area of ​​the substrate supporting unit 200. The gas dispersion plate includes a plurality of injection holes. The injection holes may penetrate the upper and lower surfaces of the gas dispersion plate in a vertical direction. The gas dispersion plate 310 may include a metal material. The gas dispersion plate 310 of the metal material may perform a function as an upper electrode.

[0067] The gas supply unit 400 may supply a process gas into the chamber 100. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply unit 410 may be disposed at the center of the upper surface of the chamber 100. An injection port may be formed on the lower surface of the gas supply nozzle 410. The injection port may supply the process gas into the chamber 100. The gas supply line 420 may connect the gas supply nozzle 410 and the gas storage unit 430 to each other. The gas supply line 420 may supply the process gas stored in the gas storage unit 430 to the gas supply nozzle 410. The gas supply line 420 may be provided with a valve 421. The valve 421 may open or close the gas supply line 420 and adjust the flow rate of the process gas supplied through the gas supply line 420.

[0068] The baffle unit 500 may be located between the inner wall of the chamber 100 and the substrate supporting unit 200. The baffle 510 may be provided in a ring shape. A plurality of through holes 511 may be formed in the baffle 510. The process gas provided in the chamber 100 may be exhausted to the exhaust hole 102 through the through holes 511 of the baffle 510. The flow of the process gas may be controlled according to the shape of the baffle 510 and the shape of the through holes 511.

[0069] Figure 3 is a diagram illustrating an exploded perspective view of a supporting unit 200 according to an exemplary embodiment of the present invention.

[0070] In accordance with Figure 3 In the supporting unit 200, the above Figure 2 Description of the components described in the support unit 200. Figure 3 The supporting unit 200 according to the present invention may further include a control board 290 , a connecting board 280 , and a connecting electrode unit 227 .

[0071] The control board 290 according to the present invention can control the first switch 231, the second switch 232 and the third switch 233 connected to the heater 230 in a matrix structure included in the support unit 200 according to the present invention. In an exemplary embodiment, the control board 290 according to the present invention may include a control unit to be described below. The control board 290 can generate a control signal for controlling the first switch 231, the second switch 232 and the third switch 233 connected to the heater 230 in a matrix structure included in the support unit 200 according to the present invention, and apply the control signal. The control signal may be a digital signal, such as an on / off signal. The control board 290 can be implemented as a computer or a device similar thereto using hardware, software or a combination thereof.

[0072] In hardware, the control board 290 can be implemented as an application specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field programmable gate array (FPGA), a processor, a microcontroller, a microprocessor, or an electronic device for performing control functions similar thereto.

[0073] In software, the control board 290 can be implemented as a software code or a software application according to one or more programming languages. The software can be executed by a controller implemented in hardware. In addition, the software can also be transmitted and provided from an external device such as a server as the above-mentioned hardware configuration.

[0074] In an exemplary embodiment, the connection plate 280 may be disposed between the heater 225 and the control board 290. In an exemplary embodiment, the connection electrode unit 227 may electrically connect the heater 225, the control board 290, and the connection plate 280 to each other.

[0075] The support unit 200 according to the present invention may include a plurality of heaters 225 arranged in a matrix form in the support unit 200 to heat the substrate, a power supply unit 225a supplying power to the plurality of heaters 225, and switches 231, 232, and 233 connected to rows and columns of the heater matrix. The support unit 200 according to the present invention may further include a control unit 290 for controlling on / off of the switches 231, 232, and 233 connected to rows and columns of the heater matrix.

[0076] Hereinafter, a connection structure and a control method of the heater 225 matrix according to the present invention will be described in detail through a circuit diagram.

[0077] Figure 4 is a diagram illustrating a structure of a matrix of heaters 225 according to an exemplary embodiment of the present invention.

[0078] refer to Figure 4 , the heater 225 matrix according to the present invention may include a plurality of heaters 225', 225", 225"', 225"" ... arranged in a matrix structure and switches 2251, 2252 and 2253 respectively connected to the plurality of heaters 225. In an exemplary embodiment of the present invention, the heater matrix according to the present invention may be configured to be arranged based on rows and columns. The heater matrix has a plurality of rows and a plurality of columns, and heaters 225', 225", 225"', 225"" ... may be connected to their intersections.

[0079] In an exemplary embodiment of the present invention, the support unit 200 of the present invention may include first switches 2251 and second switches 2252 connected to rows of a matrix and a third switch 2253 connected to columns of the matrix.

[0080] refer to Figure 4 Each row of the matrix of heaters 225 may be connected to a first switch 2251 capable of controlling the current applied to the row of the matrix. Each row of the matrix of heaters 225 may be connected to a second switch 2252 connected in parallel with the first switch 2251 capable of controlling the current applied to the row of the matrix.

[0081] The first switch 2251 and the second switch 2252 are connected to each row of the heater 225 matrix. In an exemplary embodiment, when four rows are provided to the heater 225 matrix, a total of four first switches 2251a, 2251b, 2251c and 2251d and four second switches 2252a, 2252b, 2252c and 2252d may be provided. In an exemplary embodiment, when n rows are provided to the heater 225 matrix, a total of n first switches 2251a, ..., 2251n and n second switches 2252a, ..., 2252n may be provided. That is, in an exemplary embodiment of the present invention, the first switch 2251 and the second switch 2252 may be connected to each row of the matrix, respectively.

[0082] In an exemplary embodiment, one end of the second switch 2252 is connected in parallel with one end of the first switch 2251 , and the other end of the second switch 2252 may be grounded.

[0083] The supporting unit of the present invention may further include a third switch 2253 connected to each column of the matrix. The third switches 2253 may be provided in the same number as the number of columns of the matrix.

[0084] although Figure 4 Although not shown, the supporting unit 200 according to the present invention may further include a control unit 290 for controlling on / off of the first switch 2251, the second switch 2252, and the third switch 2253. The control unit according to the present invention may connect the first switch 2251 connected to the row of the target heater 225 and the third switch 2253 connected to the column of the target heater 225 so as to measure the current of the target heater 225 included in the matrix. The control unit according to the present invention may control the second switch 2252 of other rows not connected to the target heater 225 to be connected. Therefore, there is an effect of being configured so that the current flows only in the target heater 225, and therefore, there is an effect of enabling accurate current measurement in the target heater 225.

[0085] In more detail, the following will refer to Figure 5 Describe the control method of the control unit.

[0086] A target heater 225' may be provided among the plurality of heaters 225 arranged in a matrix form. The control unit according to the present invention may control the first switch 2251a of the row connected to the target heater 225' to be turned on. In addition, the control unit according to the present invention may control all second switches 2252b, 2252c, and 2252d connected to the remaining rows except the row connected to the target heater 225' to be turned on.

[0087] In addition, the control unit according to the present invention may control the third switch 2253a of the row connected to the target heater 225' to be turned on.

[0088] That is, the control unit according to the present invention can control the first switch 2251a of the row connected to the target heater 225' to be turned on, control the second switches 2252b, 2252c and 2252d connected to the remaining rows except the row connected to the target heater 225' to be turned on, and control the third switch 2253a of the row connected to the target heater 225' to be turned on, thereby controlling the current to flow only through the target heater 225' among the multiple heaters. That is, the control unit according to the present invention can control any one of the first switch 2251a and the second switch 2252a connected for each of the multiple rows included in the heater matrix to be connected, and the control unit can control only any one of the first switches 2251a, 2251b, 2251c and 2251d corresponding to the number of the multiple rows to be connected and control the second switches 2252 in the remaining rows to be connected. Therefore, the control unit can control the current to flow only through the target heater 225' among the multiple heaters, and measure the current value that does not pass through the remaining heaters except the target heater 225' among the multiple heaters.

[0089] exist Figure 4 and Figure 5 In an exemplary embodiment of , during the current measurement, the pairs of first switches 2251 and second switches 2252 connected to each row of the heater 225 matrix may be provided by the number of rows in the heater 225 matrix. Figure 4 and Figure 5 In an exemplary embodiment, four pairs of first switches 2251 and second switches 2252 may be provided, and among the four first switches 2251 and four second switches 2252 included in the four pairs, one first switch 2251a may be turned on and three second switches 2252b, 2252c, and 2252d may be turned on.

[0090] In the present invention, the second switches 2252b, 2252c, and 2252d are connected to the heaters in the remaining rows not connected to the target heater 225', so that the current flowing in the remaining rows can be controlled to be connected to the ground.

[0091] In an exemplary embodiment, the first switch 2251 may be a power supply switch. In an exemplary embodiment, the second switch 2252 may be a power blocking switch. In an exemplary embodiment, the third switch 2253 may be a power return switch.

[0092] In the case of using the structure of the heater 225 according to the present invention, since current flows in addition to the target heater 225', but the current flowing to the lower switch corresponds to the current passing only through the target heater 225', the desired thermal value and temperature of the target heater 225' can be accurately calculated using the current.

[0093] Figure 6 An equivalent circuit for describing a current of the measurement target heater 225 ′ according to an exemplary embodiment of the present invention is shown.

[0094] Figure 6 The equivalent circuit is shown according to Figure 5 The circuit structure of the matrix heater. Figure 5 As shown, when one target heater 225' is set, the current flowing in the target heater 225' shown on the far left is supplied only to the unit of the desired target heater 225' to calculate the temperature through the resistance of the target heater 225' by measuring the voltage and current. When the resistance in each heater is assumed to be R, as shown below.

[0095] Therefore, by making a configuration of a feedback loop that cannot be applied in the related art, there is an effect of enabling accurate temperature control.

[0096] Through the equivalent circuit, the resistance can be calculated by the following equation.

[0097]

[0098]

[0099]

[0100]

[0101] Figure 7 is a flowchart illustrating a temperature control method according to an exemplary embodiment of the present invention.

[0102] According to the temperature control method of the present invention, the current flowing through the target heater 225' is measured, and thus, the resistance value can be calculated. In addition, as a result, the temperature in the area of ​​the target heater 225' can be calculated and compared with each other to adjust the output power at the target heater 225'.

[0103] That is, in the temperature control method according to the present invention, the target current measurement and the resistance value calculation at the target heater 225' can be performed. This indicates that the target current can be controlled to be supplied to only the target heater 225' through the switch control in the switch structure according to the present invention, thereby calculating the temperature and adjusting the output power of the target heater 225'.

[0104] The switch control of the control unit may be performed to connect the first switch 2251 of the row connected to the target heater 225' and to connect the third switch 2253 of the column connected to the target heater 225', and to disconnect the second switch 2252 connected to the target heater 225' and to connect the second switch 2252 connected to the remaining rows except the target heater 225'. Therefore, it is possible to control the current to flow in the area of ​​the selected target heater 225'.

[0105] According to the temperature control method of the first exemplary embodiment of the present invention, the area of ​​the heater to be controlled as a target is selected as the target heater 225', the switch is controlled so that the current flows only in the area of ​​the selected heater 225', and then the current value flowing in the area of ​​the selected heater 225' is measured, thereby checking the temperature of the area of ​​the selected heater 225', and then the temperature of the area of ​​the selected heater 225' is controlled.

[0106] According to the temperature control method of the second exemplary embodiment of the present invention, the heater area to be temperature controlled is set as the target heater 225', the target power of the target heater 225' is set, and then the switch is controlled so that the current flows only in the area of ​​the selected heater 225', and the current value flowing in the area of ​​the selected heater 225' is measured, thereby checking the temperature of the area of ​​the selected heater 225', and then checking whether the temperature of the area of ​​the heater 225' is matched with the target power. At this time, when the temperature of the area of ​​the heater 225' is not matched, the temperature control method may include controlling the temperature of the area of ​​the heater 225'.

[0107] It should be understood that the exemplary embodiments are presented to help understand the present invention, and the scope of the present invention is not limited, and various modified exemplary embodiments of the present invention are included in the scope of the present invention. The figures provided by the present invention are only illustrations of the best exemplary embodiments of the present invention. The technical protection scope of the present invention should be determined by the technical ideas of the attached claims, and it should be understood that the technical protection scope of the present invention is not limited to the text disclosure itself in the attached claims, but the technical value has a substantial impact on the equivalent scope of the present invention.

Claims

1. A support unit, comprising: a plurality of heaters arranged in rows and columns of a matrix in the support unit to heat the substrate; as well as a power supply unit for supplying electric power to the plurality of heaters, wherein the current applied to the plurality of heaters is controlled by switches connected to the rows and columns of the matrix, respectively, The switches connected to the rows of the matrix include a first switch capable of controlling a current applied to the rows of the matrix, a second switch connected in parallel with the first switch, a third switch connected to each row of the matrix, respectively, and a control unit for controlling on / off of the first switch, the second switch, and the third switch, and wherein the control unit controls the first switch of the row connected to the target heater to be connected, controls the third switch of the column connected to the target heater to be connected, and controls the second switch of other rows not connected to the target heater to be connected, so as to measure the current of the target heater included in the matrix.

2. The support unit according to claim 1, wherein: One end of the second switch is connected in parallel with one end of the first switch, and the other end of the second switch is grounded.

3. The support unit according to claim 2, wherein: The first switch and the second switch are respectively connected to each row of the matrix.

4. The support unit according to claim 1, wherein: The control unit controls any one of the first switch and the second switch connected to each of a plurality of rows included in the matrix to be connected.

5. The support unit according to claim 4, wherein: The control unit controls only one of the first switches corresponding to the number of the plurality of rows to be connected, and controls the second switches in the remaining rows to be connected.

6. A substrate processing device, comprising: A processing chamber, wherein the processing chamber has a processing space; a supporting unit, the supporting unit supporting the substrate in the processing space; a gas supply unit that supplies a process gas to the process space; as well as a plasma source, the plasma source generating plasma from the process gas, The support unit comprises: a plurality of heaters arranged in rows and columns of a matrix in the support unit to heat the substrate; a power supply unit for supplying power to the plurality of heaters; wherein the current applied to the plurality of heaters is controlled by switches connected to the rows and columns of the matrix, respectively, The switches connected to the rows of the matrix include a first switch capable of controlling a current applied to the rows of the matrix, a second switch connected in parallel with the first switch, a third switch connected to each row of the matrix, respectively, and a control unit for controlling on / off of the first switch, the second switch, and the third switch, and wherein the control unit controls the first switch of the row connected to the target heater to be connected, controls the third switch of the column connected to the target heater to be connected, and controls the second switch of other rows not connected to the target heater to be connected, so as to measure the current of the target heater included in the matrix.

7. The substrate processing apparatus according to claim 6, wherein: One end of the second switch is connected in parallel with one end of the first switch, and the other end of the second switch is grounded.

8. The substrate processing apparatus according to claim 7, wherein: The first switch and the second switch are respectively connected to each row of the matrix.

9. A method for performing temperature control of a substrate using the support unit according to claim 1, the method comprising the following steps: selecting a region of a heater to be targeted for control as a target heater; controlling the switch so that current flows only in the selected zone of the heater; measuring a value of a current flowing in the area of ​​the selected heater to check a temperature of the area of ​​the selected heater; as well as The temperature of the selected zone of the heater is controlled.

10. The method according to claim 9, wherein: Controlling the switches so that the current flows only in the region of the selected heater involves controlling the first switch of the row connected to the target heater to be connected and controlling the third switch of the column connected to the target heater to be connected.

11. The method according to claim 10, wherein: Controlling the switches so that the current flows only in the area of ​​the selected heater comprises controlling the second switches of other rows not connected to the target heater to be connected.

12. The method according to claim 11, wherein: Measuring the current value flowing in the region of the selected heater to check the temperature of the region of the selected heater comprises calculating a resistance value based on the measured current value to measure the temperature.

13. The method according to claim 12, wherein: Controlling the temperature of the selected zone of the heater comprises controlling the output power of the heater zone to be adjusted.

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