Methods of cleaning and disposing of microelectronic devices and related tooling and assemblies

Abstract

This application relates to methods of cleaning and handling microelectronic devices, and related tools and assemblies. An apparatus for handling semiconductor dies can include one or more nozzles configured to supply and aspirate fluid on at least one semiconductor die. The apparatus can include a pick apparatus comprising a pick head for picking up the at least one semiconductor die. The one or more nozzles can be configured to clean a surface of the at least one semiconductor die, at least partially remove adhesive between the at least one semiconductor die and a support element, or both.

Description

[0001] CLAIM

[0002] This application claims the benefit of the filing date of U.S. Provisional Patent Application No. 63 / 120,260, filed December 2, 2020, for “METHODS OF CLEANING AND HANDLING MICROELECTRONIC DEVICE COMPONENTS AND RELATED TOOLING AND ASSEMBLIES.” TECHNICAL FIELD

[0003] Embodiments of the present disclosure generally relate to methods of cleaning and handling microelectronic device components. In particular, embodiments of the present disclosure relate to methods of cleaning, picking up, transferring, and assembling components of microelectronic devices, and to related tooling and assemblies. BACKGROUND

[0004] As the performance of electronic devices and systems increases, there is an associated need to improve the performance of microelectronic components of such systems while maintaining or even reducing the form factor (i.e., length, width, and height) of the microelectronic devices or assemblies. Such needs are often, but not exclusively, associated with mobile devices and high performance devices. To maintain or reduce the footprint and height of component assemblies in the form of microelectronic devices (e.g., semiconductor dies), three-dimensional (3D) assemblies of stacked components equipped with so-called through-silicon vias (TSVs) for vertical electrical (i.e., signal, power, ground / bias) communication between the stacked components have become more common, which incorporate a reduction in component thickness along with the adoption of preformed dielectric films in the bondline (i.e., the space between the stacked components) to reduce the bondline thickness while increasing the bondline uniformity. Such dielectric films include, for example, so-called non-conductive films (NCFs) and wafer-level underfill (WLUF), which terms are often used interchangeably. While effective in reducing the height of 3D microelectronic device assemblies, reducing the thickness of microelectronic devices such as semiconductor dies to about 50 pm or less (e.g., 30 pm, 20 pm) increases device fragility and susceptibility to cracking under stress, particularly compressive (i.e., impact) stress and bending stress. Reducing the bondline thickness can also exacerbate the vulnerability of such extremely thin microelectronic devices, as the thin dielectric material (e.g., NCF) in the bondline can no longer provide any cushioning effect or ability to accommodate particulate contaminants in the bondline when, for example, the device is stacked on another device to form a 3D assembly. Non-limiting examples of microelectronic device assemblies that include stacked microelectronic devices that can suffer stress-induced cracking include assemblies of semiconductor memory dies, alone or in combination with other die functionality (e.g., logic), including so-called high-bandwidth memory (HBMx), hybrid memory cube (HMC), and chip-to-wafer (C2W) assemblies. SUMMARY

[0005] Some embodiments of the disclosure can include a method of processing a microelectronic device component. The method can include supplying a fluid on a portion of a surface of a semiconductor die. The method can also include aspirating the fluid from another portion of the surface of the semiconductor die. The method can further include lifting the semiconductor die from a support element after supplying and aspirating the fluid. The method can also include supplying the fluid on a portion of an opposing surface of the semiconductor die. The method can further include aspirating the fluid from another portion of the opposing surface of the semiconductor die. The method can also include positioning the semiconductor die on another microelectronic device component.

[0006] Other embodiments of the disclosure can include a method. The method can include removing at least a portion of an adhesive between a semiconductor die and a support element. The method can further include picking up the semiconductor die from the support element with a pick tool by applying a vacuum to one side of the semiconductor die and the support element. The method can also include lifting the semiconductor die with the pick tool. The method can further include transferring the semiconductor die to another location with the pick tool.

[0007] Other embodiments of the disclosure can include an apparatus for handling microelectronic devices. The apparatus can include at least one nozzle. The nozzle can include a fluid outlet port configured and positionable to supply a fluid on a surface of a microelectronic device. The nozzle can further include a suction port configured to receive the supplied fluid from the surface of the microelectronic device. The apparatus can further include a pick arm having a pick surface configured and positionable to receive the microelectronic device on the pick surface by applying a vacuum to the surface.

[0008] Other embodiments of the disclosure can include an apparatus for handling microelectronic devices. The apparatus can include a cleaning apparatus and a pick apparatus. The cleaning apparatus can include a plurality of nozzles configured and positionable to supply a cleaning fluid to surfaces of a plurality of semiconductor dies and simultaneously suction the cleaning fluid from the surfaces. The cleaning apparatus can further include a cleaning fluid reservoir in selective communication with the plurality of nozzles. The cleaning apparatus can also include a vacuum source configured to suction the cleaning fluid through the plurality of nozzles. The pick apparatus can include a pick head positionable in proximity to a semiconductor die after the cleaning fluid has been supplied to and suctioned from the semiconductor die. The pick apparatus can further include a vacuum source in selective communication with the pick head to attract a cleaned semiconductor die to the pick head. BRIEF DESCRIPTION OF DRAWINGS

[0009] While the specification concludes with claims distinctly identifying embodiments of the disclosure, advantages of embodiments of the disclosure can be determined from the following description of embodiments of the disclosure when read in conjunction with the attached drawings, in which:

[0010] Figure 1 Illustrative diagram of a stacked microelectronic device;

[0011] Figure 2A and 2B is a magnified view of a stacked microelectronic device showing degraded electrical connections due to the presence of particulate contaminants;

[0012] Figure 3A and 3B illustrating an electron microscope image of a microelectronic device showing damage caused by particulate contamination;

[0013] Figure 4 illustrating a cross-sectional view of a wafer of semiconductor dies after a dicing process according to embodiments of the disclosure;

[0014] Figure 5 illustrating a cross-sectional view of a wafer of semiconductor dies during a cleaning process according to embodiments of the disclosure;

[0015] Figure 6 illustrating a cross-sectional view of a wafer of semiconductor dies during a pick-up process according to embodiments of the disclosure;

[0016] Figure 7 illustrating a cross-sectional view of a wafer of semiconductor dies after a pick-up process according to embodiments of the disclosure;

[0017] Figure 8 illustrating a cross-sectional view of a nozzle according to embodiments of the disclosure;

[0018] Figure 9 illustrating a cross-sectional view of a wafer of semiconductor dies after a dicing process according to embodiments of the disclosure;

[0019] Figure 10 illustrating a cross-sectional view of a wafer of semiconductor dies during a cleaning process according to embodiments of the disclosure;

[0020] Figure 11 illustrating a cross-sectional view of a wafer of semiconductor dies during a pick-up process according to embodiments of the disclosure;

[0021] Figure 12 illustrating a front view of a pick-up tool according to embodiments of the disclosure;

[0022] Figure 13 illustrating a cross-sectional view of a wafer of semiconductor dies during an adhesive lift-off process according to embodiments of the disclosure;

[0023] Figure 14 illustrating a schematic view of a microelectronic device handling tool according to embodiments of the disclosure;

[0024] Figure 15 illustrating a flowchart representation of a method of cleaning semiconductor dies according to embodiments of the disclosure; and

[0025] Figure 16 illustrating a flowchart representation of a method of handling semiconductor dies according to embodiments of the disclosure. DETAILED DESCRIPTION

[0026] The illustrations presented herein are not intended to be actual views of any particular microelectronic device, microelectronic device assembly tool, or parts thereof, but are idealized representations that are used to describe the illustrative embodiments. The various figures are not necessarily drawn to scale.

[0027] As used herein, the term "substantially" with regard to a given parameter means and includes to the extent that one of ordinary skill in the art would understand the given parameter, characteristic, or condition to be satisfied with a small degree of variance, e.g., within acceptable manufacturing tolerances. For example, a parameter that is substantially satisfied can be at least about 90% satisfied, at least about 95% satisfied, at least about 99% satisfied, or even at least about 100% satisfied.

[0028] As used herein, relational terms, such as "first," "second," "top," "bottom," and the like, can be used solely to distinguish one entity or action from another, without necessarily preferring one entity or action over the other, unless context clearly indicates otherwise.

[0029] As used herein, the term "and / or" means and includes any and all combinations of one or more of the associated listed items.

[0030] As used herein, the terms "vertical" and "lateral" refer to the orientations as depicted in the figures.

[0031] Figure 1 A microelectronic device 100 is illustrated. The microelectronic device 100 can include a plurality of semiconductor dies 102 arranged in a stack. A dielectric film 104, such as a non-conductive film (NCF) or wafer-level underfill (WLUF), can be positioned between each of the semiconductor dies 102. The microelectronic device 100 can include through-silicon vias (TSVs) 106 aligned with contacts in the form of conductive pillars 108p, which are optionally capped with solder 108s and bonded to terminal pads 108t of adjacent semiconductor dies 102, providing electrical contact between and / or through the stack of dies 102. For example, the TSVs 106 and aligned contacts can provide power, ground / bias, and signal connections.

[0032] The height of the microelectronic device 100 can be reduced by reducing the thickness of the semiconductor dies 102 and / or the dielectric film 104. Reducing the thickness of the semiconductor dies 102 can make the semiconductor dies 102 more fragile and susceptible to damage in the form of microcracks, cracks, and edge chipping during pick-up and stacking processes, as described in further detail below. Reducing the thickness of the dielectric film 104 can reduce the ability of the dielectric film 104 to provide any cushioning effect or to accommodate particulate contaminants in the bond wires without damaging the semiconductor dies 102. For example, contaminant particles between the semiconductor dies 102 can cause one or more of the semiconductor dies 102 to bend and / or break due to stress concentrations caused by the presence of the contaminant particles when the semiconductor dies 102 are picked up from a carrier, transported to a bonding end, or stacked on another semiconductor die 102 or substrate. In some embodiments, contaminant particles between the semiconductor dies 102 can substantially prevent one or more of the conductive pillars 108p from making electrical contact with the aligned terminal pads 108t.

[0033] Figure 2A and 2B An enlarged view of an electrical connection point between two semiconductor dies 102 that is compromised due to the presence of a particulate contaminant is illustrated. As Figure 2A and 2B Illustrated in Figure 2A and 2B , a particle 202, such as a particle of an organic (e.g., polymeric) material or an inorganic (e.g., silicon) material, can be present in a bond line between the semiconductor dies 102. The bond line between the semiconductor dies 102 can include the dielectric film 104 and the solder 108s, which is configured to provide electrical connections between the conductive pillars 108p and the aligned terminal pads 108t of the adjacent semiconductor dies 102. In some cases, the particle 202 can be located between one or more sets of conductive pillars 108p and terminal pads 108t, as shown in Figure 2A and 2B , such that the particle 202 can interrupt or displace the solder 108s. In assemblies that employ direct diffusion bonding of the conductive pillars 108p to the terminal pads 108t or use thermal compression bonding to melt the solder 108s to bond the conductive pillars 108p to the terminal pads 108, as depicted in

[0034] The particle 202 can cause the associated microelectronic device 100 to fail. For example, the particle 202 can substantially prevent an operable electrical connection between at least one conductive stud 108p and a terminal pad 108t. In some cases, the particle 202 can allow a portion of the solder 108s to form a connection between a portion of the conductive stud 108p and the terminal pad 108t while substantially preventing a connection between another portion of the conductive stud 108p and the terminal pad 108t. A partial connection between the conductive stud 108p and the terminal pad 108t can pass initial testing but exhibit increased resistance, generating heat that can cause the connection to fail prematurely. In some cases where an extremely tight pitch (i.e., space) between connections is employed, the particle 202 can displace the solder 108s and form an electrical connection between two pairs of contacts that are laterally adjacent, causing a short circuit.

[0035] Figure 3A and 3B A view is illustrated with a damaged semiconductor die 102 resulting from the presence of a contaminant particle 302 in a bondline between the semiconductor dies 102. As described above, reducing the thickness of the semiconductor dies 102 can make the semiconductor dies 102 more fragile, and reducing the thickness of the dielectric film 104 can reduce the ability of the dielectric film 104 to provide any cushioning effect or to accommodate particulate contaminants in the bondline. When the semiconductor dies 102 are stacked and pressed together, a particle 302 in the space between the semiconductor dies 102 can cause a portion of the semiconductor dies 102 to lift and / or break, creating a broken portion 304 (e.g., a peeled portion, a crack, a chip, etc.) of the semiconductor dies 102.

[0036] When the dielectric film 104 thickness is reduced, smaller contaminant particles 302 can cause microcracks or even cracks in the semiconductor dies 102. For example, in near zero bondline (NZB) assemblies and hybrid bonding techniques that are currently being developed, the dielectric film 104 can include silicon oxide or an extremely thin polymer, allowing a bondline thickness of less than about 1 micrometer (pm), such as less than about 500 nanometers (nm). With a bondline of less than about 1 pm, contaminant particles 302 in a similar size range, such as between about 600 nm and about 1 pm, can cause a stress concentration between adjacent semiconductor dies 102, creating a crack or microcrack.

[0037] The fractured portion 304 can render the associated semiconductor die 102 unusable. Because the stack of semiconductor dies 102 can not experience substantial pressure until the entire stack is assembled and thermocompression bonded, the semiconductor die 102 can not crack until after the stack of semiconductor dies 102 is assembled and bonded. Thus, the fractured portion 304 can render the entire stack of semiconductor dies 102 unusable. Therefore, during production of microelectronic devices using qualified known good dies (KGDs), the presence of contaminant particles in the wire bonds of the stack of semiconductor dies 102 can result in significant yield loss due to post-assembly structural damage caused by contaminant particles and electrical connection problems resulting from contaminant particles.

[0038] In some cases, microcracks, cracks, or edge chipping in the semiconductor dies 102 can be caused during the picking process when singulated semiconductor dies 102 are removed from a carrier material, such as a dicing tape or carrier wafer. The lower surface of the singulated semiconductor dies 102 can be coupled to the upper surface of the carrier material by an adhesive to maintain position and alignment prior to the picking process. However, when the semiconductor dies 102 are lifted or picked from the carrier material, the resistance of the adhesive (and in particular, where the bond strength of different portions of the adhesive in contact with the semiconductor dies 102 varies) can be sufficient to cause the semiconductor dies 102 to crack as they are lifted from the carrier material. For example, if the adhesive along the perimeter of the semiconductor dies 102 does not peel away from the semiconductor dies 102 at the same time as the central portion of the adhesive, the semiconductor dies 102 can crack or break due to bending forces as they are lifted from the carrier material. As the thickness of the semiconductor dies 102 decreases and the semiconductor dies 102 become more fragile, the semiconductor dies 102 can become more susceptible to damage during the picking process due to the resistance or uneven resistance of the adhesive to be peeled away.

[0039] Figure 4 A number of semiconductor dies 402 are illustrated after a dicing operation and before a picking operation. The dicing operation can be used to form streets 404 between individual semiconductor dies 402 of a semiconductor wafer, separating or “singulating” the semiconductor wafer into individual semiconductor dies 402. The dicing operation can include a laser dicing operation (e.g., stealth dicing) or a plasma dicing. Different dicing operations can affect the width of the streets (e.g., kerf width). For example, a laser dicing operation can result in a street width of between about 40 pm and about 20 pm, and a plasma dicing operation can result in a street width of between about 10 pm and about 5 pm.

[0040] Cutting operations and / or movement of additional components, fixtures, materials, adjacent semiconductor dies 402, etc. can generate or introduce contaminant particles 406 to the surfaces of the semiconductor dies 402 and / or the lanes 404 between the semiconductor dies 402. As described above, after the semiconductor dies 402 are disposed into a die stack or other microelectronic device assembly, the contaminant particles 406 can potentially damage the associated semiconductor dies 402 or adjacent semiconductor dies 402. Thus, removing the contaminant particles 406 prior to pick-up from the carrier material can improve the reliability of the resulting microelectronic device and / or improve the yield of the microelectronic device manufacturing process by reducing the number of useless microelectronic devices due to one or more defective semiconductor dies 402 or connections in the microelectronic device assembly.

[0041] Throughout the cutting operations, the semiconductor dies 402 can be supported by a carrier material 412, such as a dicing tape on a film frame, and until the pick-up operations. The carrier material 412 can include an adhesive 408 and a backing 410. The backing 410 can provide support to maintain the relative positions and rotational orientations between adjacent semiconductor dies 402 and prevent movement of the semiconductor dies 402. The carrier material 412 can support and position the semiconductor dies 402 so that a pick-up tool can position and lift individual semiconductor dies 402 from the carrier material 412 at the appropriate time during assembly of the microelectronic device.

[0042] Figure 5 A process action of removing contaminant particles 406 from semiconductor dies 402 is illustrated. A nozzle 502 can be used to supply fluid to and remove fluid from the semiconductor dies 402. The nozzle 502 can include a nozzle outlet 506 and a nozzle inlet 504. The nozzle outlet 506 can be sized and configured to supply cleaning fluid on the semiconductor dies 402, and the nozzle inlet 504 can be sized and configured to aspirate cleaning fluid and any suspended contaminant particles from the semiconductor dies 402. In some embodiments, the cleaning fluid can be water, such as deionized water (DI water). In some embodiments, the cleaning fluid can be a solvent, such as an alcohol, an ester, or a ketone.

[0043] In some embodiments, the nozzle outlet 506 and the nozzle inlet 504 can be as Figure 5The nozzles 502 can be arranged as described in FIG. 5 such that the nozzle outlet 506 is located in a central position and the nozzle inlet 504 is positioned on an outer portion of the nozzle 502 proximate a periphery of the associated semiconductor die 402. The nozzle outlet 506 can supply cleaning fluid over the semiconductor die 402 such that the cleaning fluid can flow from a central region of the semiconductor die 402 onto a top surface 510 (e.g., an active surface) of the semiconductor die 402 according to arrow 508 and back into the nozzle 502 through the nozzle inlet 504 proximate the periphery of the semiconductor die 402. The cleaning fluid can also flow into the lanes 404 between the semiconductor dies 402. The cleaning fluid can capture contaminant particles 406 from the top surface 510 of the semiconductor die 402 and the lanes 404 between the semiconductor dies 402 and suspend the contaminant particles 406 within the cleaning fluid such that the contaminant particles 406 can be removed with the cleaning fluid as it flows into the nozzle 502 through the nozzle inlet 504.

[0044] In other embodiments, the nozzle inlet 504 can be positioned in a central position and the nozzle outlet 506 is positioned on an outer portion of the nozzle 502 proximate a periphery of the associated semiconductor die 402, as described in more detail in FIG. 6. Figure 8

[0045] The nozzles 502 can be configured such that substantially all of the cleaning fluid supplied by the nozzle outlet 506 is removed by the nozzle inlet 504. For example, the nozzle inlet 504 can be configured to remove (e.g., suction, vacuum, etc.) at least the same amount of cleaning fluid as the nozzle outlet 506 is configured to supply. In some embodiments, the lateral cross-sectional area of the nozzle outlet 506 and the nozzle inlet 504 can be substantially the same. In some embodiments, the cross-sectional area of the nozzle inlet 504 can be greater than the nozzle outlet 506. The larger nozzle inlet 504 can compensate for a pressure differential between the cleaning fluid flowing out of the nozzle outlet 506 and the cleaning fluid on the semiconductor die 402. In some embodiments, the larger nozzle inlet 504 can enable the nozzle 502 to more easily remove larger contaminant particles 406 suspended and / or captured in the cleaning fluid.

[0046] In some embodiments, the flow between the nozzle outlet 506 and the nozzle inlet 504 can be balanced by adjusting the fluid pressure in the nozzle outlet 506 and the vacuum pressure in the nozzle inlet 504. For example, the fluid pressure in the nozzle outlet 506 can be decreased and the vacuum pressure in the nozzle inlet 504 can be increased until the flow into the nozzle inlet 504 is substantially equal to the flow out of the nozzle outlet 506.

[0047] ​In some embodiments, the cleaning fluid can be pulsed, e.g., by ultrasonic pulsing, to provide additional cleaning characteristics. For example, ultrasonic pulsing of the cleaning fluid can create a scrubbing action to enhance removal of contaminant particles 406. Ultrasonic pulsing can create cavitation bubbles in the cleaning fluid that can dislodge contaminant particles 406 from the surface of the semiconductor dies 402 and small cavities, such as the streets 404 between semiconductor dies 402 or spaces between conductive elements (i.e., conductive pillars) on the top surface 510.

[0048] In some embodiments, the adhesive 408 can be formulated to be weakened or removed by the cleaning fluid. For example, the adhesive 408 can be a water-soluble adhesive, such as the ADHESIVE 1000® sold by Disco Corporation. In some embodiments, the adhesive 408 can be a solvent-soluble adhesive, such as the ADHESIVE 1000® sold by Disco Corporation. In other embodiments, the adhesive 408 can be soluble in a particular solvent. When the cleaning fluid is provided on the semiconductor dies 402 by the nozzle 502, the cleaning fluid can enter the streets 404 and contact the adhesive 408 in the streets 404 and under the semiconductor dies 402. As described in Figure 6 The cleaning fluid can at least partially remove the adhesive 408 from under the semiconductor dies 402. For example, as described in Figure 6 In some embodiments, a portion of the adhesive 408 in the area around the perimeter of the underside of the semiconductor dies 402 can be substantially removed.

[0049] Figure 6 A pick-up process is described that is performed to remove the semiconductor dies 402. As described above, the cleaning fluid can remove a portion of the adhesive 408. In some cases, the cleaning fluid can form an undercut 604 under the semiconductor dies 402. The undercut 604 can be an area under the semiconductor dies 402 that is substantially free of adhesive 408. Adhesive residue 606 can remain in a central area of the semiconductor dies 402. The amount of adhesive 408 removed from the undercut 604 can depend on the solubility of the adhesive 408 with respect to the cleaning fluid and the amount of time the nozzle 502 supplies the cleaning fluid on the semiconductor dies 402. In some cases, the nozzle 502 and associated tooling can be configured to supply the cleaning fluid on the semiconductor dies 402 for between about 1 second (s) and about 60 s, such as between about 1 and about 30 s.

[0050] As described above, some semiconductor dies 402 can crack or break during the pick-up process due to the resistance created by the adhesive 408. The resistance can decrease as the size (i.e., footprint) of the adhesive residue 606 decreases. Thus, as the size of the undercut 604 increases, the likelihood of the semiconductor dies 402 cracking or breaking during the pick-up process can decrease. Furthermore, during the pick-up process, the perimeter regions of the semiconductor dies 402 are regions where the adhesive 408 is most likely to resist peeling away from the semiconductor dies 402 and cause the semiconductor dies 402 to crack or break under the stress of being lifted by the vacuum force applied by the pick-up tool. Thus, removing the adhesive 408 from the perimeter regions on the underside of the semiconductor dies 402 can not only decrease the adhesion of the semiconductor dies 402 to the backing 410, but also concentrate the adhesion along the upward direction of movement during pick-up, thereby eliminating the bending force and substantially decreasing the likelihood of cracking or breaking the semiconductor dies 402.

[0051] During the pick-up process, the pick-up tool 602 can be configured to pull the semiconductor dies 402 away from the backing 410. The pick-up tool 602 can use suction or a vacuum to secure the top surface 510 of the semiconductor dies 402 to the pick-up tool 602. After the pick-up tool 602 is secured to the semiconductor dies 402, the pick-up tool 602 can apply an upward force to the semiconductor dies 402 in a direction away from the backing 410. When the pick-up tool 602 applies the upward force away from the backing 410, the pusher 608 can simultaneously apply a supplemental upward force from the opposite side of the backing 410, thereby pushing the semiconductor dies 402 in a direction toward the pick-up tool 602 and away from the backing 410. Under the influence of the forces generated by the pick-up tool 602 and the pusher 608, the adhesive residue 606 can cause the semiconductor dies 402 to peel away from the backing 410, for example, by breaking, shearing, or tearing the adhesive residue 606.

[0052] Referring now to Figure 7 After the semiconductor dies 402 are picked up from the backing 410, the back surface 702 of the semiconductor dies 402 can be cleaned by the nozzle 704. For example, the pick-up tool 602 can move the semiconductor dies 402 such that the back surface 702 of the semiconductor dies 402 can be exposed. The nozzle 704 can be positioned in proximity to the exposed back surface 702 of the semiconductor dies 402. The pick-up tool 602 can move the semiconductor dies 402 into a position in proximity to the nozzle 704. In some embodiments, the nozzle 704 can be moved into a position in proximity to the back surface 702 of the semiconductor dies 402. In other embodiments, the nozzle 704 can remain substantially fixed, and the pick-up tool 602 can move the semiconductor dies 402 into a position in proximity to the nozzle 704.

[0053] Nozzle 704 can have a configuration similar to nozzle 502 described above. For example, nozzle 704 can include a nozzle outlet 706 at a central location and a nozzle inlet 708 at an outer location proximate a peripheral region of semiconductor die 402. Nozzle outlet 706 can be configured to supply cleaning fluid on back surface 702 of semiconductor die 402, and nozzle inlet 708 can be configured to draw cleaning fluid and any suspended contaminant particles from back surface 702 of semiconductor die 402. In some embodiments, the cleaning fluid can be water, such as DI water, or a solvent, such as an alcohol, an ester, or a ketone.

[0054] Nozzle outlet 706 can supply cleaning fluid on back surface 702 of semiconductor die 402 such that the cleaning fluid can flow from a central region of semiconductor die 402 onto back surface 702 of semiconductor die 402 according to arrow 710, and back into nozzle 704 through nozzle inlet 708 proximate the periphery of semiconductor die 402. The cleaning fluid can capture contaminant particles 406 from back surface 702 of semiconductor die 402 and suspend contaminant particles 406 within the cleaning fluid such that contaminant particles 406 can be removed with the cleaning fluid as it flows into nozzle 704 through nozzle inlet 708.

[0055] In some embodiments, the flow between nozzle outlet 706 and nozzle inlet 708 can be balanced by adjusting the fluid pressure in nozzle outlet 706 and the vacuum pressure in nozzle inlet 708. For example, the fluid pressure in nozzle outlet 706 can be decreased and the vacuum pressure in nozzle inlet 708 can be increased until the flow into nozzle inlet 708 substantially equals the flow out of nozzle outlet 706.

[0056] In some embodiments, the cleaning fluid can be pulsed, such as by ultrasonic pulse delivery, to provide additional cleaning characteristics. As described above, ultrasonic pulse delivery can create cavitation bubbles in the cleaning fluid that can dislodge contaminant particles 406 from the surface and small cavities or cracks of semiconductor die 402.

[0057] Figure 8 A nozzle 802 is illustrated. Nozzle 802 can be used to remove contaminant particles 406 in the processes illustrated in Figure 5 and / or the processes illustrated in Figure 7 Nozzle 802 can include a nozzle inlet 806 at a central location and a nozzle outlet 804 at an outer location proximate a peripheral region of semiconductor die 402. Nozzle outlet 804 can be configured to supply cleaning fluid on semiconductor die 402, and nozzle inlet 806 can be configured to draw cleaning fluid and any suspended contaminant particles from semiconductor die 402.

[0058] The nozzle outlet 804 can supply cleaning fluid over the semiconductor dies 402 such that the cleaning fluid can flow from the peripheral regions of the semiconductor dies 402 onto the surfaces of the semiconductor dies 402 according to arrows 808 and back into the nozzle 802 through the nozzle inlet 806 proximate the central regions of the semiconductor dies 402. The cleaning fluid can capture the contaminant particles 406 from the semiconductor dies 402 and suspend the contaminant particles 406 within the cleaning fluid such that the contaminant particles 406 can be removed with the cleaning fluid as the fluid flows into the nozzle 802 through the nozzle inlet 806.

[0059] In some embodiments, the nozzle outlet 804 can be positioned in a region outside the periphery of the semiconductor dies 402, such as in the region of the streets 404 between the semiconductor dies 402. Thus, in the cleaning process described in Figure 5 the nozzle outlet 804 can supply cleaning fluid into the streets 404 and the cleaning fluid can then flow out of the streets 404 and onto the semiconductor dies 402. In other embodiments, the nozzle outlet 804 can be positioned inside the periphery of the semiconductor dies 402 such that the nozzle outlet 804 can supply cleaning fluid onto the top surface 510 or back surface 702 of the semiconductor dies 402.

[0060] Figure 9 A number of semiconductor dies 902 are illustrated after a dicing operation and before a pick-up operation. The dicing operation can be used to form streets 904 between the individual semiconductor dies 902, thereby separating the semiconductor dies 902. The dicing operation can include a sawing operation, a laser dicing operation (e.g., stealth dicing), or a plasma dicing.

[0061] The dicing operation and / or movement (e.g., introduction or removal) of additional components, fixtures, materials, etc. can generate or introduce contaminant particles 906 to the surfaces of the semiconductor dies 902 and / or the streets 904 between the semiconductor dies 902. As described above, after the semiconductor dies 902 are arranged into a microelectronic device assembly, such as a die stack, the contaminant particles 906 can potentially damage the associated semiconductor dies 902 or adjacent semiconductor dies 902.

[0062] The semiconductor dies 902 can be supported by a carrier material 910 during the dicing operation and until the pick-up operation. The carrier material 910 can be a substantially rigid material, such as a carrier wafer, a glass or ceramic substrate, etc. The semiconductor dies 902 can be secured to the carrier material 910 by an adhesive 908.

[0063] Figure 10A process step of removing contaminant particles 906 from semiconductor dies 902 is illustrated. Nozzles 1002 can be used to supply fluid to and remove fluid from semiconductor dies 902. Nozzles 1002 can include nozzle outlets 1004 and nozzle inlets 1006. Nozzle outlets 1004 can be configured to supply cleaning fluid on semiconductor dies 902, and nozzle inlets 1006 can be configured to draw cleaning fluid and any suspended contaminant particles from semiconductor dies 902. In some embodiments, the cleaning fluid can be water, such as deionized water (DI water), or a solvent, such as an alcohol, an ester, or a ketone.

[0064] In some embodiments, nozzle outlets 1004 and nozzle inlets 1006 can be arranged as described in Figure 10 Nozzle outlets 1004 can supply cleaning fluid on semiconductor dies 902 such that cleaning fluid can flow from a central region of semiconductor dies 902 onto top surfaces 1014 of semiconductor dies 902 according to arrows 1008, and back into nozzles 1002 through nozzle inlets 1006 proximate the periphery of semiconductor dies 902. Cleaning fluid can also flow into lanes 904 between semiconductor dies 902. In other embodiments, nozzle outlets 1004 and nozzle inlets 1006 can be arranged as described above Figure 8 in which nozzle outlets 1004 are located on an outer portion of nozzles 1002 and nozzle inlets 1006 are located in a central location of nozzles 1002. Cleaning fluid can trap contaminant particles 906 from top surfaces 1014 of semiconductor dies 902 and / or lanes 904 between semiconductor dies 902 and suspend contaminant particles 906 within the cleaning fluid such that contaminant particles 906 can be removed by the cleaning fluid as the fluid flows through nozzle inlets 1006 into nozzles 1002.

[0065] As described above, nozzles 1002 can be configured such that substantially all of the cleaning fluid supplied by nozzle outlets 1004 is removed by nozzle inlets 1006. In some embodiments, the flow between nozzle outlets 1004 and nozzle inlets 1006 can be balanced by adjusting the fluid pressure in nozzle outlets 1004 and the vacuum pressure in nozzle inlets 1006. In some embodiments, nozzle inlets 1006 can be configured to enable nozzles 1002 to remove additional material, such as contaminant particles 906 suspended and / or trapped in cleaning fluid.

[0066] In some embodiments, the cleaning fluid can be pulsed, e.g., by ultrasonic pulse delivery, to provide additional cleaning characteristics. As described above, ultrasonic pulse delivery can create cavitation bubbles in the cleaning fluid that can dislodge contaminant particles 906 from the surfaces and small cavities or cracks of the semiconductor dies 902, e.g., the streets 904 between the semiconductor dies 902.

[0067] In some embodiments, the adhesive 908 can be formulated to be removed by the cleaning fluid. For example, the adhesive 908 can be a water-soluble adhesive. In other embodiments, the adhesive 908 can be soluble in a particular solvent. When the cleaning fluid is provided by the nozzle 1002 onto the semiconductor dies 902, the cleaning fluid can enter the streets 904 and contact the adhesive 908. The cleaning fluid can at least partially remove the adhesive 908 from under the semiconductor dies 902, forming an undercut 1010. The undercut 1010 can be an area under the semiconductor dies 902 that is substantially free of adhesive 908. Adhesive residue 1012 can remain in the central region of the semiconductor dies 902. The amount of adhesive 908 removed from the undercut 1010 can depend on the solubility of the adhesive 908 relative to the cleaning fluid and the amount of time the nozzle 1002 supplies the cleaning fluid on the semiconductor dies 902. In some cases, the nozzle 1002 and associated tooling can be configured to supply the cleaning fluid on the semiconductor dies 902 for between about 1 second (s) and about 60 s, e.g., between about 1 s and about 30 s. As described above, removing the adhesive 908 from the peripheral regions of the semiconductor dies 902 can sufficiently reduce the likelihood of breaking or cracking the semiconductor dies 902.

[0068] Figure 11 A pick-up process performed on the semiconductor dies 902 is illustrated. During the pick-up process, the pick-up tool 1102 can be configured to pull the semiconductor dies 902 away from the carrier material 910. The pick-up tool 1102 can use suction or a vacuum to secure the top surface 1014 of the semiconductor dies 902 to the pick-up tool 1102. After the pick-up tool 1102 is secured to the semiconductor dies 902, the pick-up tool 1102 can exert a force in an upward direction away from the carrier material 910. When picking up the semiconductor dies 902 from a rigid carrier material 910, e.g., a carrier wafer, the pick-up tool 1102 can be the only tool exerting a force in a direction away from the carrier material 910 (e.g., there is no pusher configured to exert a supplemental force from an opposing side of the carrier material 910). Under the influence of the vacuum and upward force generated by the pick-up tool 1102, the adhesive residue 1012 can peel the semiconductor dies 902 from the carrier material 910, e.g., by breaking, shearing, or tearing the adhesive residue 1012.

[0069] The carrier material 910 can be secured by a platform tool 1104 configured to resist the upward force generated by the pick tool 1102 so that the carrier material 910 remains in place when the pick tool 1102 lifts the semiconductor die 902 away from the carrier material 910. The platform tool can be configured to couple to or attract the bottom surface 1106 of the carrier material 910, for example, by suction or vacuum. The bottom surface 1106 of the carrier material 910 can be the surface of the carrier material opposite the adhesive 908 and / or the semiconductor die 902.

[0070] Figure 12 A front view of the platform tool 1104 is illustrated. The platform tool 1104 can include a tool face 1202 configured to interface with the bottom surface of the carrier material 910. The tool face 1202 can be configured to rest flat against the bottom surface of the carrier material 910 so that the tool face 1202 resides in a plane proximate to and generally parallel to the bottom surface.

[0071] The tool face 1202 can include a plurality of vacuum ports 1204. The vacuum ports 1204 can be configured to enable a vacuum source to generate a vacuum or suction at the tool face 1202. As the number of vacuum ports 1204 in the tool face 1202 increases, the vacuum force generated at the tool face 1202 can increase. In some embodiments, the vacuum ports 1204 can be holes or channels in the tool face 1202. In some embodiments, the vacuum ports 1204 can be arranged in concentric rings on the tool face 1202 of the platform tool 1104. For example, the vacuum ports 1204 can be arranged in between about four concentric rings and about ten concentric rings, such as between about five concentric rings and about eight concentric rings, or about six concentric rings. In some embodiments, the concentric rings can be a series of holes forming each concentric ring. In other embodiments, the concentric rings can each be a channel forming the associated concentric ring.

[0072] In some embodiments, the platform tool 1104 can be formed of a porous material, such as a porous ceramic material. A vacuum source can generate a vacuum or suction at the tool face 1202 through the pores in the porous material. Thus, if the material of the platform tool 1104 is more porous, the suction force of the platform tool 1104 can increase. Increasing the suction force of the platform tool 1104 can enable the pick tool 1102 to utilize a greater suction force. As described above, when picking a semiconductor die 902 from a rigid carrier material 910, the pick tool 1102 can need a greater suction force to pick the semiconductor die 902 without the aid of a pusher supplying supplemental force from the opposite side of the carrier material 910.

[0073] Figure 13A process of adhesive lift-off is described with respect to the semiconductor die 902. In some embodiments, the adhesive 908 between the semiconductor die 902 and the carrier material 910 can be lifted off by a separate process. For example, the adhesive 908 can be configured to thermally lift-off (e.g., lift-off or decompose when exposed to heat). In some embodiments, the adhesive 908 can be configured to lift-off in response to a chemical process. In some embodiments, the adhesive 908 can be configured to lift-off in response to a mechanical process. Figure 5 or Figure 10 After the cleaning process described in Figure 5 or Figure 10 , the heating device 1302 can be positioned to heat the area around the semiconductor die 902. The heating device 1302 can heat the area under and around the semiconductor die 902 by a beam 1304, such as a laser beam. The beam 1304 can be directed on the top surface 1014 of the semiconductor die 902, thereby heating the semiconductor die 902 until the adhesive 908 between the semiconductor die 902 and the carrier material 910 substantially lifts-off or decomposes.

[0074] In some embodiments, the heating device 1302 can be positioned to heat the adhesive 908 through the carrier material 910. For example, the heating device 1302 can be disposed on the side of the carrier material 910 opposite the semiconductor die 902, such that the beam 1304 can be directed on the side of the carrier material 910 opposite the semiconductor die 902, thereby heating the adhesive 908 behind the carrier material 910. Heating the adhesive 908 through the carrier material 910 can enable the adhesive lift-off process to overlap or at least partially be performed simultaneously with another process that interfaces with the top surface 1014 of the semiconductor die 902 to increase throughput. For example, the adhesive lift-off process can be performed through the carrier material 910 during the cleaning process of Figure 5 or 10 Figure 6 or 11 .

[0075] After the adhesive 908 is lifted off, the adhesive 908 can provide little resistance during the pick-up process of Figure 6 or 11 . Thus, thermally lifting off the adhesive 908 can substantially reduce the number of semiconductor dies 902 that are broken or cracked during the pick-up process.

[0076] After the semiconductor die 902 is picked up from the carrier material 910 in the process described in Figure 11 , the backside of the semiconductor die 902 can be cleaned in substantially the same manner as described in Figure 7 . For example, the pick-up tool 1102 can dispose the semiconductor die 902 such that the backside of the semiconductor die 902 is exposed to a nozzle, such as the nozzle 704, configured to supply a cleaning fluid on the back surface of the semiconductor die 902 and to suction the cleaning fluid and any suspended contaminant particles 906 from the back surface of the semiconductor die 902.

[0077] Some embodiments of the disclosure can include an apparatus for handling microelectronic devices. The apparatus can include at least one nozzle and a pick-up arm. The at least one nozzle can include a fluid outlet port configured and positionable to supply a fluid on a surface of a microelectronic device. The at least one nozzle can further include a suction port configured to receive the supplied fluid from the surface of the microelectronic device. The pick-up arm can include a pick-up surface configured and positionable to receive the microelectronic device on the pick-up surface by applying a vacuum to the surface.

[0078] Other embodiments of the disclosure can include an apparatus for handling microelectronic devices. The apparatus can include a cleaning apparatus and a pick-up apparatus. The cleaning apparatus can include a plurality of nozzles configured and positionable to supply a cleaning fluid to surfaces of a plurality of semiconductor dies and simultaneously suction the cleaning fluid from the surfaces. The cleaning apparatus can further include a cleaning fluid reservoir in selective communication with the plurality of nozzles. The cleaning apparatus can also include a vacuum source configured to suction the cleaning fluid through the plurality of nozzles. The pick-up apparatus can include a pick-up head positionable in proximity to a semiconductor die after the cleaning fluid has been supplied to and suctioned from the semiconductor die. The pick-up apparatus can further include a vacuum source in selective communication with the pick-up head to attract a cleaned semiconductor die to the pick-up head.

[0079] Figure 14 A schematic of a tooling for a pick-up process is illustrated. As shown in Figure 14 A wafer, singulated into a plurality of individual semiconductor dies 402 by a cutting process, is supported on and bonded to a carrier material 412. As described above, the carrier material 412 can support a semiconductor wafer during a cutting operation that separates the individual semiconductor dies 402. A similar tooling can be used to pick up semiconductor dies 902 from a carrier material 910, as illustrated in Figures 9 to 12 .

[0080] The tooling can include cleaning devices 1410 and pick devices 1426. The cleaning devices 1410 and pick devices 1426 can be controlled by a controller 1408. The controller 1408 can be configured to store and execute instructions by a processor 1404 and a memory 1406. The controller 1408 can be configured to position the cleaning devices 1410 and pick devices 1426 relative to the semiconductor dies 402, and to position the cleaning devices and pick devices relative to each other. For example, the controller 1408 can be configured to position a cleaning device 1410 one or more semiconductor dies 402 immediately in front of a pick device 1426, such that the cleaning device 1410 can clean the semiconductor dies 402, followed by the pick device 1426 immediately picking the semiconductor dies 402 from the carrier material 412.

[0081] Each of the cleaning devices 1410 and pick devices 1426 can include an optical sensor system 1402 configured to optically determine a position of the respective cleaning device 1410 and / or pick device 1426 relative to the semiconductor dies 402. The controller 1408 can use the optical sensor system 1402 to position the cleaning devices 1410 and / or pick devices 1426 vertically above the respective semiconductor dies 402 (e.g., aligned in the lateral X, Y plane and rotationally aligned about a vertical axis).

[0082] The cleaning devices 1410 can include an array of nozzles 1416. Each nozzle 1416 of the array of nozzles 1416 can include an outlet 1418 and an inlet 1420. The outlet 1418 can be operably coupled to a fluid reservoir 1414 by a fluid supply line 1424. The fluid can be pressurized, e.g., by a pump or compressor, such that the fluid can pass through the fluid supply line 1424 and out of the outlet 1418 under pressure. In some embodiments, the fluid reservoir 1414 can be pressurized. For example, a pump or compressor can be positioned before the fluid reservoir 1414. Each of the inlets 1420 can be coupled to a vacuum source 1412 by a vacuum line 1422. The vacuum source 1412 can be configured to create a vacuum or suction at the nozzles 1416 through the inlets 1420.

[0083] As described above, the cleaning apparatus 1410 can supply cleaning fluid on the semiconductor dies 402 for an extended period of time, e.g., between 10 and 30 seconds (s), to clean the semiconductor dies 402 and dissolve at least a portion of the adhesive 408. For each semiconductor die 402, the pick-up operation can be completed between about 0.5 s and about 2 s. Thus, to maintain throughput during the pick-up and stacking process, the cleaning apparatus 1410 can be configured to clean multiple semiconductor dies 402 at a time. For example, the array of nozzles 1416 can include multiple nozzles 1416 positioned adjacent to one another, such that the array of nozzles 1416 can clean multiple adjacent semiconductor dies 402 at substantially the same time. In some embodiments, the nozzles 1416 can move between different semiconductor dies 402 as the cleaning process proceeds, such that each nozzle 1416 in the array of nozzles 1416 can be positioned on each semiconductor die 402 for a certain period of time. After the entire array of nozzles 1416 has passed over a single semiconductor die 402, the combined period of time for the semiconductor die 402 to have been supplied with cleaning fluid by different nozzles 1416 in the array of nozzles 1416 can total to an extended period of time to dissolve a portion of the adhesive 408. In some embodiments, the array of nozzles 1416 can remain substantially fixed, and the carrier material 412 can move thereunder to position the semiconductor dies 402 relative to the nozzles 1416.

[0084] The pick-up apparatus 1426 can include a pick-up tool 1428. The pick-up tool 1428 can be configured to pick up each individual semiconductor die 402 from the carrier material 412. The controller 1408 can be configured to position the pick-up apparatus 1426 to pick up a semiconductor die 402 adjacent to a nozzle 1416 in the array of nozzles 1416. For example, the controller 1408 can position the pick-up tool 1428 on a semiconductor die 402 immediately after the last nozzle 1416 in the array of nozzles 1416 passes over the semiconductor die 402. In some embodiments, the controller 1408 can be configured to position the carrier material 412 relative to the pick-up apparatus 1426 to position each semiconductor die 402 to be picked up directly below the pick-up tool 1428. The pick-up tool 1428 can include a pick-up arm 1430 having a pick-up head 1432. The pick-up head 1432 can include a vacuum port 1438 that provides suction at a tool face 1434 of the pick-up head 1432. The vacuum port 1438 can be coupled to a vacuum source 1440 configured to generate suction or a vacuum through the vacuum port 1438.

[0085] Once aligned on the semiconductor die 402, the pick head 1432 can be rapidly lowered vertically until a predetermined preprogrammed standoff distance, for example between about 100 pm and about 500 pm, is achieved between the tool face 1434 of the pick head 1432 and the top surface 510 of the semiconductor die 402, after which the travel of the pick head 1432 is significantly slowed, effecting a "soft touch" travel to contact on the top surface 510. Between the time the pick head 1432 slows and makes contact with the top surface 510, the pusher 1436 can be moved upward against the carrier material 412, moving upward in synchronization with the pick head 1432, and can present the semiconductor die 402 to the tool face 1434. Vacuum ports 1438 in the tool face 1434 can actively pull the semiconductor die 402 to the tool face 1434. Ideally, the pick head 1432 and the pusher 1436 can move substantially in unison to minimize, i.e., substantially eliminate, contact forces between the tool face 1434 and the pusher 1436.

[0086] The pick arm 1430 can include one or more pivots 1442. The pivots 1442 can be configured to enable the pick arm 1430 to move the pick head 1432 and any attached semiconductor die 402 to another location, for example, for cleaning the back surface 702 of the semiconductor die 402, as described in Figure 7

[0087] Some embodiments of the disclosure can include a method of processing a microelectronic device component. The method can include supplying a fluid on a portion of a semiconductor die surface. The method can further include aspirating the fluid from another portion of the semiconductor die surface. The method can also include lifting the semiconductor die from a support element after supplying and aspirating the fluid. The method can further include supplying the fluid on a portion of an opposing surface of the semiconductor die. The method can also include aspirating the fluid from another portion of the opposing surface of the semiconductor die. The method can further include positioning the semiconductor die on another microelectronic device component.

[0088] Figure 15 A flowchart representing a method 1500 of cleaning a semiconductor die is illustrated. Reference is also made to Figures 4 to 14 In act 1502, a semiconductor wafer can be diced, separating the semiconductor wafer into a plurality of individual semiconductor dies 402, 902. The plurality of individual semiconductor dies 402, 902 can remain coupled to a carrier material 412, 910, for example a carrier wafer or dicing tape. The carrier material 412, 910 can maintain relative positions between each of the semiconductor dies 402, 902 such that the semiconductor dies 402, 902 remain in substantially the same positions after being diced in act 1502.​

[0089] While maintained in place by the carrier material 412, 910, the top surface of the individual semiconductor dies 402, 902, which can be an active surface, can be cleaned. Cleaning the active surface of the semiconductor dies 402, 902 can substantially remove any contaminant particles that can be present on the semiconductor dies 402, 902, such as dust particles, silicon particles, polymer residue particles, etc. In some cases, contaminant particles can be generated during the dicing process, and / or can fall from adjacent semiconductor dies during the pick-up process. In act 1504, contaminant particles can be removed from the active surface of the semiconductor dies 402, 902 by supplying a fluid on the active surface of the semiconductor dies 402, 902. As described above, the fluid can be a cleaning fluid, such as DI water or a solvent. In some embodiments, the fluid can be accelerated by a nozzle so that the fluid can impact the active surface of the semiconductor dies 402, 902 with a large force to dislodge contaminant particles from the active surface of the semiconductor dies 402, 902. In some embodiments, the fluid can be pulsed, such as ultrasonic pulse delivery, which can cause cavitation and dislodge more contaminant particles from the active surface of the semiconductor dies 402, 902.

[0090] In act 1506, the fluid can be aspirated from the active surface of the semiconductor dies 402, 902. Act 1504 of supplying the fluid can be performed substantially simultaneously (e.g., simultaneously) with act 1506 of aspirating the fluid. For example, the same fluid can be aspirated in act 1506 when introduced in act 1504. The fluid can be supplied on the semiconductor dies 402, 902 in a first location and aspirated from a second location so that the fluid can flow on the active surface of the semiconductor dies 402, 902 from the first location to the second location. The removed contaminant particles can be substantially suspended in the fluid so that when the fluid is aspirated from the active surface of the semiconductor dies 402, 902 in act 1506, the suspended contaminant particles can also be aspirated with the fluid, thereby removing the contaminant particles from the active surface of the semiconductor dies.

[0091] In some cases, prior to removal by aspiration in act 1506, the fluid can flow over the active surface of the semiconductor dies 402, 902 and into the lanes between the semiconductor dies 402, 902. Thus, any contaminant particles in the lanes can also be substantially removed by the fluid. Removing contaminant particles in the lanes can significantly reduce the number of contaminant particles introduced to adjacent semiconductor dies 402, 902 when the associated semiconductor dies 402, 902 are removed or picked up in act 1508.

[0092] In act 1508, the semiconductor die 402, 902 can be lifted from the carrier material by a pick-up head configured to secure the semiconductor die 402, 902 to the pick-up head by suction. The suction can be sufficient to peel away any remaining adhesive, for example, by breaking or tearing the adhesive.

[0093] After lifting or picking up the semiconductor die 402, 902 in act 1508, the back surface of the semiconductor die 402, 902 can be cleaned in acts 1510 and 1512 with a cleaning fluid. In some embodiments, the pick-up head can invert the semiconductor die 402, 902 so that the back surface faces the nozzle in a substantially upward direction. In other embodiments, the pick-up head can move the semiconductor die 402, 902 over the nozzle so that the back surface remains in a substantially downward direction and the nozzle faces the back surface upward. In other embodiments, the pick-up head can position the semiconductor die 402, 902 at an angle to match the position of the nozzle. In some embodiments, the nozzle can be moved to meet the back surface of the semiconductor die 402, 902.

[0094] Cleaning the back surface of the semiconductor die 402, 902 can substantially remove any contaminant particles that can be present on the semiconductor die 402, 902, such as dust particles, silicon particles, polymer residue particles, etc. As described above, contaminant particles can be generated during the dicing process, and / or can fall from adjacent semiconductor dies 402, 902 during the picking process. In some cases, the contaminant particles can be residual particles of adhesive present on the back surface or particles associated with the adhesive. In act 1510, the contaminant particles can be removed from the back surface of the semiconductor die 402, 902 by supplying a fluid over the back surface. The fluid can be a cleaning fluid, such as DI water or a solvent. In some embodiments, the fluid can be accelerated by the nozzle so that the fluid can impact the back surface of the semiconductor die 402, 902 with a greater force configured to dislodge the contaminant particles from the back surface of the semiconductor die 402, 902. In some embodiments, the fluid can be pulsed, such as ultrasonic pulse delivery, which can induce cavitation and dislodge more contaminant particles from the back surface of the semiconductor die 402, 902.

[0095] In act 1512, the fluid can be aspirated from the back surface of the semiconductor die 402, 902. The act 1510 of supplying the fluid can be performed substantially simultaneously (e.g., concurrently) with the act 1512 of aspirating the fluid. For example, the same fluid can be aspirated in act 1512 when the fluid is introduced in act 1510. The fluid can be supplied on the back surface of the semiconductor die 402, 902 in a first location and aspirated from a second location, such that the fluid can flow on the back surface of the semiconductor die 402, 902 from the first location to the second location. The removed contaminant particles can be substantially suspended in the fluid, such that when the fluid is aspirated from the back surface of the semiconductor die 402, 902 in act 1512, the suspended contaminant particles can also be aspirated with the fluid, thereby removing the contaminant particles from the back surface of the semiconductor die 402, 902.

[0096] After the two sides (e.g., active surface and back surface) of the semiconductor die 402, 902 are cleaned and substantially free of contaminant particles, in act 1514, the semiconductor die 402, 902 can be stacked on another microelectronic device, e.g., another semiconductor die, wafer, or another substrate. For example, the pick-up head can transfer the semiconductor die 402, 902 to another tool, e.g., a bond head configured to stack the semiconductor die 402, 902. In some embodiments, the pick-up head can transfer the semiconductor die 402, 902 directly onto another semiconductor device. The stacked semiconductor die 402, 902 and / or microelectronic device can be bonded together to form a stacked microelectronic device. The semiconductor die 402, 902 and / or another microelectronic device can be stacked and bonded together in another process or series of process steps and / or techniques, e.g., near zero bond line or hybrid bonding.

[0097] Some embodiments of the disclosure can include a method of handling a semiconductor device. The method can include removing at least a portion of an adhesive between a semiconductor die and a support element. The method can further include picking up the semiconductor die from the support element with a pick-up tool by applying a vacuum to one side of the semiconductor die and the support element, and lifting the semiconductor die with the pick-up tool. The method can also include transferring the semiconductor die to another location with the pick-up tool.

[0098] Figure 16 A flowchart representing a method 1600 of handling a semiconductor die is illustrated. Reference is also made to Figures 4 to 14In act 1602, the semiconductor wafer can be secured to a support element, such as the carrier material 412, 910. For example, the wafer can be secured to the carrier material 412, 910 by an adhesive 408, 908. After securing the wafer to the support element in act 1602, in act 1604, the wafer can be separated into individual semiconductor dies 402, 902. As described above, the wafer can be separated by a cutting process such as sawing, laser cutting (e.g., stealth dicing), or plasma dicing.

[0099] After separating the wafer into individual semiconductor dies 402, 902 in act 1604, in act 1606, at least a portion of the adhesive 408, 908 between the individual semiconductor dies 402, 902 can be removed. In some embodiments, the adhesive 408, 908 can be soluble in a cleaning fluid, such as a water-soluble or solvent-soluble cleaning fluid, such that cleaning of the semiconductor dies 402, 902 can simultaneously serve to dissolve at least a portion of the adhesive 408, 908 contacted by the cleaning fluid. As described above, the cleaning fluid can be supplied on the respective semiconductor dies 402, 902 for an extended period of time to dissolve a larger amount of adhesive 408, 908. In some embodiments, the adhesive 408, 908 can be configured to thermally release (e.g., release when heated). The semiconductor dies 402, 902 can be heated, such as with a laser or other heating device, to release the adhesive 408, 908.

[0100] After removing at least a portion of the adhesive 408, 908 in act 1606, in act 1608, the pick tool 602, 1102, 1428 can pick or lift the semiconductor dies 402, 902 from the support element. As described above, the pick tool 602, 1102, 1428 can contact the active or top surface of the semiconductor dies 402, 902. The pick tool 602, 1102, 1428 can be secured to the semiconductor dies 402, 902 by suction through a vacuum port in the pick tool 602, 1102, 1428. The suction can be sufficient to overcome, break, or tear any adhesive 408, 908 remaining after the portion of the adhesive 408, 908 is removed in act 1606. The pick tool 602, 1102, 1428 can remove the semiconductor dies 402, 902 from the support element by overcoming, breaking, or tearing the remaining adhesive and lifting the semiconductor dies 402, 902 away from the support element.

[0101] After picking or lifting the semiconductor die 402, 902 from the support element in act 1608, the semiconductor die 402, 902 can be stacked on another microelectronic device (e.g., other semiconductor dies, wafers, or other microelectronic device components) in act 1610. For example, the pick tool 602, 1102, 1428 can transfer the semiconductor die 402, 902 to another tool, such as a bond head that can secure the semiconductor die 402, 902 to another microelectronic device. In some embodiments, the pick tool 602, 1102, 1428 can directly transfer the semiconductor die 402, 902 to another microelectronic device. The semiconductor die 402, 902 and / or other microelectronic device components can be stacked and bonded together in another process or series of process steps and / or techniques (e.g., near zero bond line or hybrid bonding).

[0102] Non-limiting embodiments of the present disclosure can include:

[0103] Embodiment 1 : A method of processing a microelectronic device component, comprising: supplying a fluid on a portion of a semiconductor die surface; aspirating the fluid from another portion of the semiconductor die surface; lifting the semiconductor die from a support element after supplying and aspirating the fluid; supplying the fluid on a portion of an opposing surface of the semiconductor die; aspirating the fluid from another portion of the opposing surface of the semiconductor die; and positioning the semiconductor die on another microelectronic device component.

[0104] Embodiment 2: The method of embodiment 1, further comprising pulsing delivery of the fluid when supplying the fluid.

[0105] Embodiment 3: The method of any of embodiments 1 or 2, wherein aspirating the fluid from another portion of the semiconductor die surface comprises removing substantially the same amount of fluid from the other portion of the semiconductor die surface as is supplied to the portion of the semiconductor die surface.

[0106] Embodiment 4: The method of any of embodiments 1 to 3, wherein aspirating the fluid from another portion of the opposing surface comprises removing substantially the same amount of fluid from the other portion of the opposing surface of the semiconductor die as is supplied to the portion of the opposing surface of the semiconductor die.

[0107] Embodiment 5: The method of any of embodiments 1 to 4, further comprising flowing the fluid into a channel proximate a periphery of the semiconductor die.

[0108] Example 6: The method of any of Examples 1-5, further comprising contacting an adhesive between the opposing surface of the semiconductor die and the support element with a fluid flowed into the lane, and dissolving at least a portion of the adhesive between the support element and the semiconductor die with the fluid.

[0109] Example 7: The method of Example 6, further comprising dissolving the at least a portion of the adhesive prior to lifting the semiconductor die.

[0110] Example 8: The method of any of Examples 1-7, wherein the fluid comprises deionized water or a solvent.

[0111] Example 9: A method comprising: removing at least a portion of an adhesive between a semiconductor die and a support element; picking the semiconductor die from the support element with a picking tool by applying a vacuum to one side of the semiconductor die and the support element and lifting the semiconductor die with the picking tool; and transferring the semiconductor die to another location with the picking tool.

[0112] Example 10: The method of Example 9, wherein the adhesive comprises a water-soluble adhesive.

[0113] Example 11: The method of any of Examples 9 or 10, wherein removing the at least a portion of the adhesive comprises flowing a fluid into a region proximate the adhesive between the semiconductor die and the support element to at least degrade the adhesive.

[0114] Example 12: The method of Example 11, further comprising flowing the fluid into the region for a period of time between about 1 second (s) and about 30 s.

[0115] Example 13: The method of any of Examples 9-12, wherein the adhesive comprises a heat-releasable adhesive, and removing the at least a portion of the adhesive comprises heating the adhesive.

[0116] Example 14: The method of Example 13, wherein heating the adhesive comprises heating the semiconductor die with a laser.

[0117] Example 15: The method of any of Examples 13 or 14, wherein heating the adhesive comprises heating the support element with a laser.

[0118] Embodiment 16: An apparatus for handling microelectronic devices, the apparatus comprising: at least one nozzle comprising a fluid outlet port and a suction port, the fluid outlet port configured and positionable to supply fluid on a surface of a microelectronic device, the suction port configured to receive the supplied fluid from the surface of the microelectronic device; and a pick arm having a pick surface, the pick surface configured and positionable to receive the microelectronic device on the pick surface by applying a vacuum to the surface.

[0119] Embodiment 17: The apparatus of embodiment 16, wherein the at least one nozzle comprises a second nozzle, the second nozzle comprising: a second fluid outlet port configured and positionable to supply fluid on another surface of the microelectronic device opposite the surface when the microelectronic device is received on the pick arm; and a second suction port configured to receive the supplied fluid from the another surface of the microelectronic device.

[0120] Embodiment 18: The apparatus of any of embodiments 16 or 17, wherein the fluid outlet port is positioned in a central region of the nozzle and the suction port is positioned in a peripheral region of the nozzle.

[0121] Embodiment 19: The apparatus of any of embodiments 16 to 18, wherein the suction port is positioned in a central region of the nozzle and the fluid outlet port is positioned in a peripheral region of the nozzle.

[0122] Embodiment 20: An apparatus for handling microelectronic devices, comprising a cleaning apparatus and a pick apparatus, the cleaning apparatus comprising: a plurality of nozzles configured and positionable to supply a cleaning fluid to surfaces of a plurality of semiconductor dies and simultaneously suction the cleaning fluid from the surfaces; a cleaning fluid reservoir in selective communication with the plurality of nozzles; and a vacuum source configured to suction the cleaning fluid through the plurality of nozzles; the pick apparatus comprising: a pick head positionable to access a semiconductor die after the cleaning fluid has been supplied to and suctioned from the semiconductor die; and a vacuum source in selective communication with the pick head to attract a cleaned semiconductor die to the pick head.

[0123] Embodiments of the disclosure can reduce the number of failed through- stacked microelectronic devices. For example, embodiments of the disclosure can reduce the number of contaminant particles present between adjacent microelectronic devices in a microelectronic device stack. Reducing the number of contaminant particles between adjacent microelectronic device components in a microelectronic device stack can reduce the number of damaged microelectronic devices in the microelectronic device stack. Reducing the number of contaminant particles between adjacent microelectronic device components can also substantially prevent electrical shorts or electrical resistance due to intervening contaminant particles. Damaged (e.g., cracked, micro-cracked) microelectronic devices, electrical shorts, and electrical resistance introduced due to intervening contaminant particles can cause the entire associated microelectronic device stack to fail. Thus, reducing the number of contaminant particles present between adjacent microelectronic devices in a microelectronic device stack can significantly reduce the number of microelectronic device stacks that are rendered useless or broken during the assembly process.

[0124] Embodiments of the disclosure can also reduce the number of semiconductor dies damaged during the pick-up process. Reducing the number of semiconductor devices damaged during the pick-up process can increase the yield of semiconductor dies per wafer by reducing or eliminating the number of damaged semiconductor dies in each wafer.

[0125] Increasing the yield of microelectronic devices by reducing the number of damaged semiconductor devices or microelectronic device stacks rendered useless can increase the production yield of microelectronic devices, even if the pick-and-place process is slightly slowed. The increased yield can make the production of associated microelectronic devices more profitable or less costly. The microelectronic devices can be included in a variety of different types of electronic devices, such as personal electronics (e.g., mobile devices, phones, tablets, etc.), computers (e.g., personal computers, laptops, etc.), and the like. Reducing the cost of producing microelectronic devices can in turn reduce the cost of producing associated electronic devices.

[0126] Embodiments of the disclosure described above and illustrated in the drawings are not meant to limit or restrict the scope of the application, as these embodiments are merely examples of embodiments of the application and are thus defined in the claims and their legal equivalents. Any equivalents for the embodiments of the disclosure should be within the scope of the disclosure. Indeed, various modifications can become apparent to those skilled in the art from a consideration of the specification and practice of the disclosure as set forth herein. Such modifications are intended to be within the scope of this disclosure. Indeed, all connections mentioned in the above description are to be considered merely a written description and explained examples of the principles of the application and are presented for the purpose of illustrating the general principles of the application and can be embodied in other forms without departing from the spirit of the application.

Claims

1. A method of handling a microelectronic device component, comprising: supplying fluid on a portion of a surface of a semiconductor die; aspirating the fluid from another portion of the surface of the semiconductor die; lifting the semiconductor die from a support element after supplying and aspirating the fluid; supplying the fluid on a portion of an opposing surface of the semiconductor die; aspirating the fluid from another portion of the opposing surface of the semiconductor die; positioning the semiconductor die on another microelectronic device component; and contacting an adhesive between the opposing surface of the semiconductor die and the support element with the fluid flowing into a channel and dissolving at least a portion of the adhesive between the support element and the semiconductor die with the fluid.

2. The method of claim 1, further comprising pulsing delivery of the fluid when supplying the fluid.

3. The method of claim 1, wherein aspirating the fluid from another portion of the surface of the semiconductor die comprises removing substantially the same amount of fluid from the other portion of the surface of the semiconductor die as supplied to the portion of the surface of the semiconductor die.

4. The method of claim 1, wherein aspirating the fluid from another portion of the opposing surface comprises removing substantially the same amount of fluid from the other portion of the opposing surface of the semiconductor die as supplied to the portion of the opposing surface of the semiconductor die.

5. The method of claim 1, further comprising flowing the fluid into the channel proximate a periphery of the semiconductor die.

6. The method of any of claims 1-5, further comprising dissolving the at least a portion of the adhesive prior to lifting the semiconductor die.

7. The method of any of claims 1-5, wherein the fluid comprises deionized water or a solvent.

8. A method for handling a semiconductor die, comprising: removing at least a portion of an adhesive between the semiconductor die and a support element; picking the semiconductor die from the support element with a pick tool by applying a vacuum to one side of the semiconductor die and the support element and lifting the semiconductor die with the pick tool; and transferring the semiconductor die to another location with the pick tool.

9. The method of claim 8, wherein the adhesive comprises a water-soluble adhesive.

10. The method of any of claims 8 or 9, wherein removing the at least a portion of the adhesive comprises flowing a fluid into a region proximate the adhesive between the semiconductor die and the support element to at least degrade the adhesive.

11. The method of claim 10, further comprising flowing the fluid into the region for a period of time between 1 second and 30 seconds.

12. The method of claim 8, wherein the adhesive comprises a heat-releasable adhesive and removing the at least a portion of the adhesive comprises heating the adhesive. ​ ​ 13. The method of claim 12, wherein heating the adhesive comprises heating the semiconductor die with a laser.

14. The method of claim 12, wherein heating the adhesive comprises heating the support element with a laser.

15. An apparatus for handling microelectronic devices, comprising: at least one nozzle comprising: a fluid outlet port configured and positionable to supply a fluid on a surface of a microelectronic device; and a suction port configured to receive the supplied fluid from the surface of the microelectronic device, wherein the at least one nozzle is configured to remove at least a portion of an adhesive between the microelectronic device and a support element; and a pick arm having a pick surface configured and positionable to receive the microelectronic device on the pick surface by applying a vacuum to the surface.

16. The apparatus of claim 15, wherein the at least one nozzle comprises a second nozzle comprising: a second fluid outlet port configured and positionable to supply a fluid on another surface of the microelectronic device opposite the surface when the microelectronic device is received on the pick arm; and a second suction port configured to receive the supplied fluid from the another surface of the microelectronic device.

17. The apparatus of claim 15, wherein the fluid outlet port is positioned in a central region of the nozzle and the suction port is positioned in a peripheral region of the nozzle.

18. The apparatus of any of claims 15-17, wherein the suction port is positioned in a central region of the nozzle and the fluid outlet port is positioned in a peripheral region of the nozzle.

19. An apparatus for handling microelectronic devices, comprising: a cleaning apparatus comprising: a plurality of nozzles configured and positionable to supply a cleaning fluid to a surface of a plurality of semiconductor dies and simultaneously suction the cleaning fluid from the surface, wherein at least one of the plurality of nozzles is configured to remove at least a portion of an adhesive between at least one of the plurality of semiconductor dies and a support element; a cleaning fluid reservoir in selective communication with the plurality of nozzles; and a vacuum source configured to suction the cleaning fluid through the plurality of nozzles; and a pick apparatus comprising: a pick head positionable proximate to a semiconductor die after the cleaning fluid has been supplied to and suctioned from the semiconductor die; and a vacuum source in selective communication with the pick head to attract a cleaned semiconductor die to the pick head. ​

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