Substrate processing method

Abstract

A substrate (WF) has a plurality of chip regions (RS) provided with a structure forming a power device, and is provided with a processed film (501). The sensor (81) is scanned in the radial direction while the substrate (WF) is rotated, so that the thickness distribution of the processed film (501) in the radial direction is measured. The average thickness (d avg The extracted thickness distribution has an average thickness (d avg ) as at least one candidate position. At least one of the at least one candidate position is determined as at least one measurement position. A treatment liquid is supplied from a nozzle (52) to a film to be treated (501) on the substrate (WF) while the substrate (WF) is rotated. A change in the thickness of the film to be treated (501) over time is monitored at at least one measurement position by a sensor (81) while the substrate (WF) is rotated.

Description

Technical Field

[0001] The present invention relates to a substrate processing method, in particular to a substrate processing method using a processing liquid. Background Art

[0002] In the manufacturing process of semiconductor substrates (hereinafter referred to as "substrates"), various processes are performed on the substrates using substrate processing devices. For example, an etching process is performed to remove a film formed on the upper surface of the substrate using a processing liquid. According to Japanese Patent Laid-Open No. 2003-97919 (Patent Document 1), in the process of supplying an etching liquid to the surface of a wafer and etching the thin film on the surface to the middle of the film thickness, the film thickness of the thin film is detected in real time. Then, at the time point when the detected value of the film thickness reaches the target film thickness, the etching is stopped. Thus, a thin film that is controlled to the target film thickness with high precision can be found to remain on the surface of the wafer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-97919 Summary of the invention

[0006] Problems to be solved by the invention

[0007] Due to process deviation and other reasons, the thickness of the film to be processed in the substrate processing is not uniform at any position on the substrate. Since the substrate processing described in the above-mentioned publication does not take this into account, there is a case where the performance of the device manufactured by the manufacturing method including the substrate processing becomes insufficient. In other words, there is a case where the manufacturing yield of the semiconductor device with sufficient performance becomes low.

[0008] The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a substrate processing method suitable for manufacturing a semiconductor device having sufficient performance.

[0009] Means for solving problems

[0010] A substrate processing method according to one aspect of the present invention processes at least one substrate, wherein the substrate has a radial direction, has a plurality of chip regions provided with a structure forming a power device, and is provided with a film to be processed; wherein the substrate processing method comprises:

[0011] Step (a), measuring the thickness distribution of the processed film in the radial direction by rotating the substrate and scanning the sensor in the radial direction;

[0012] Step (b), calculating the average thickness of the thickness distribution;

[0013] Step (c), extracting at least one radial position where the thickness distribution has the average thickness as at least one candidate position;

[0014] Step (d), determining at least one of the at least one candidate position as at least one measurement position;

[0015] Step (e), supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate; and

[0016] The step (f) includes monitoring a change in the thickness of the film to be processed over time at the at least one measuring position by the sensor while rotating the substrate.

[0017] Another aspect of the present invention is a substrate processing method for processing at least one substrate, wherein the substrate has a radial direction, has a plurality of chip regions provided with a structure that becomes a non-power device, i.e., a semiconductor device, and is provided with a film to be processed; wherein the substrate processing method comprises:

[0018] Step (a), measuring the thickness distribution of the processed film in the radial direction by rotating the substrate and scanning the sensor in the radial direction;

[0019] Step (b), calculating the minimum thickness of the thickness distribution;

[0020] Step (c), extracting at least one radial position where the thickness distribution has the minimum thickness as at least one candidate position;

[0021] Step (d), determining at least one of the at least one candidate position as at least one measurement position;

[0022] Step (e), supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate; and

[0023] The step (f) includes monitoring a change in the thickness of the film to be processed over time at the at least one measuring position by the sensor while rotating the substrate.

[0024] Effects of the Invention

[0025] According to a substrate processing method of one embodiment, the average thickness of the processed film can be controlled with good accuracy. Thus, the thickness of the processed film can be prevented from being excessive or insufficient. Therefore, in a power device having a current path along the thickness direction of the processed film, a situation where the resistance is too large due to excessive thickness and a situation where the withstand voltage is insufficient due to too small thickness can be avoided.

[0026] According to another substrate processing method, the minimum thickness of the processed film can be controlled with good precision. Thus, excessive substrate processing can be prevented. Thus, the adverse effects on the characteristics of the semiconductor device caused by the unexpected corrosion of the part covered by the processed film can be avoided.

[0027] The objects, features, aspects, and advantages associated with the technology disclosed in the present application specification will become more apparent from the following detailed description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a diagram schematically showing a configuration example of a substrate processing apparatus in the first embodiment.

[0029] Figure 2 It roughly indicates Figure 1 A diagram showing an example of a structure of a liquid processing unit.

[0030] Figure 3 yes Figure 2 A top view of the main parts of the liquid handling unit.

[0031] Figure 4 Yes means Figure 1 A functional block diagram showing an example of the connection relationship between the various elements of a substrate processing apparatus and a control unit.

[0032] Figure 5 This is a plan view schematically showing a configuration example of a substrate to be processed by the substrate processing method.

[0033] Figure 6 It is along Figure 5 A schematic partial cross-sectional view taken along line VI-VI.

[0034] Figure 7 This is a timing chart showing an example of the substrate processing method in the first embodiment.

[0035] Figure 8 is with Figure 7 The corresponding flow chart.

[0036] Fig. 9 This is a schematic diagram for explaining an example of measuring thickness distribution in the first embodiment.

[0037] Fig.10 This is a diagram showing an example of a setting screen for setting determination conditions of a measurement position in the first embodiment.

[0038] Fig.11 This is a graph for explaining an example of a method of determining a timing for stopping the supply of the processing liquid in the first embodiment.

[0039] Fig.12This is a graph for explaining a modified example of the measured thickness distribution in the first embodiment.

[0040] Fig.13 This is a flowchart showing an example of a substrate processing method in the second embodiment.

[0041] Fig.14 This is a schematic diagram for explaining an example of measuring thickness distribution in the second embodiment.

[0042] Fig.15 Yes means Figure 7 A timing diagram of a modified example of . DETAILED DESCRIPTION

[0043] Below, while referring to the attached Figure 1While explaining the implementation mode. In the following implementation mode, detailed features are also shown for explaining the technology, but these are only examples. In order to implement the implementation mode, these are not necessarily all necessary features. In addition, the drawings are schematically represented, and for the convenience of description, the composition is appropriately omitted or simplified in the drawings. In addition, the time width in the timing diagram does not strictly represent the actual time width. In addition, the size and position of the composition represented in different drawings may not be accurately recorded, but can be appropriately changed. In addition, in the following description, the same constituent elements are marked with the same reference numerals and illustrated, and the names and functions of these constituent elements are set to be the same. Therefore, in order to avoid repetition, there is a situation where the detailed description of these constituent elements is omitted. In addition, in the following description, when it is recorded as "having", "including" or "having" a certain constituent element, unless it is particularly emphasized, it is not an exclusive expression that excludes the existence of other constituent elements. In addition, in the descriptions recorded below, expressions indicating relative or absolute positional relationships, such as "in a direction", "along a direction", "parallel", "orthogonal", "center", "concentric" or "coaxial", etc., unless otherwise specified, include situations where the positional relationship is strictly indicated, and situations where the angle or distance is displaced within a tolerance or a range that can obtain the same degree of function. In addition, in the descriptions recorded below, expressions indicating equal states, such as "same", "equal", "uniform" or "homogeneous", etc., unless otherwise specified, include situations where a strictly equal state is indicated, and situations where a difference is generated within a tolerance or a range that can obtain the same degree of function. In addition, in the descriptions recorded below, expressions such as "moving an object in a specific direction", unless otherwise specified, include situations where an object is moved parallel to the specific direction, and situations where an object is moved in a direction having a component of the specific direction. Furthermore, in the following description, the description of “the upper surface of…” or “the lower surface of…” etc. includes not only the upper surface of the constituent element itself but also the state where other constituent elements are formed on the upper surface of the constituent element. That is, for example, when it is described as “B disposed on the upper surface of A”, it does not prevent the existence of another constituent element “C” between A and B. Furthermore, in the following description, the expression of a shape, such as “circular shape” etc., includes the case where the shape is strictly expressed and the case where projections and depressions or chamfers are formed within the tolerance or the range that can obtain the same degree of function, unless otherwise emphasized.

[0044] <Implementation Method 1>

[0045] Figure 1This is a diagram schematically showing an example of the structure of a substrate processing apparatus according to the present embodiment. In order to make the structure easier to understand, some components may be omitted or simplified in this figure.

[0046] The substrate processing device 1 is a single-wafer processing device that processes disc-shaped substrates WF such as semiconductor wafers one by one. The substrate processing device 1 performs various processes such as etching on the substrate WF. The substrate processing device 1 has a scale section 2 and a processing section 3 in sequence toward the positive direction of the X axis. In addition, the processing section 3 has a conveying module 3A and a processing module 3B in sequence toward the positive direction of the X axis.

[0047] The indexing section 2 includes: a substrate container 21 that can store a plurality of substrates WF in a stacked state; a stage 22 that supports the substrate container 21; and an indexing robot 23 that receives unprocessed substrates WF from the substrate container 21 and delivers substrates WF processed in the processing section 3 to the substrate container 21. In addition, the number of stages 22 is Figure 1 In the example, for the sake of simplicity, it is set to one, but more than one can be arranged in the Y-axis direction. The substrate storage container 21 can be a front opening unified pod (FOUP) that stores the substrate WF in a closed state, or a standard mechanical interface (SMIF) box or an open cassette (OC). The indexing robot 23, for example, has a base part 23A, a multi-joint arm 23B, and two hands 23C and a hand 23D that are spaced apart from each other in the vertical direction. The base part 23A is fixed to a frame that defines the outer shape of the indexing section 2 of the substrate processing device 1. The multi-joint arm 23B is constructed so that a plurality of arms that can rotate along a horizontal plane are rotatably coupled to each other, and the arm can be flexed and extended by changing the angle between the arms at the coupling portion of the arm, i.e., the joint portion. In addition, the base end of the multi-joint arm 23B can be coupled to the base part 23A rotatably around the vertical axis. Furthermore, the multi-joint arm 23B is coupled to the base portion 23A so as to be liftable. The hand 23C and the hand 23D are configured to respectively hold a substrate WF. The indexing robot 23, for example, uses the hand 23C to move out an unprocessed substrate WF from the substrate container 21 held on the stage 22. Next, the indexing robot 23 delivers the substrate WF to the conveying mechanism 31 (described later) in the conveying module 3A from the negative direction of the X-axis. Furthermore, the indexing robot 23, for example, uses the hand 23D to receive a processed substrate WF from the conveying mechanism 31. Next, the indexing robot 23 accommodates the substrate WF in the substrate container 21 held on the stage 22.

[0048] The conveying module 3A in the processing section 3 has a conveying mechanism 31 that can convey one or more substrates WF while keeping them in a horizontal position. The conveying mechanism 31 can also move on a cylindrical conveying path surrounded by a partition wall (not shown here) formed along the XZ plane and the XY plane. In addition, the conveying mechanism 31 can also move back and forth guided by a track extending in the X-axis direction. Through the conveying mechanism 31, the substrate WF is conveyed between a position close to the negative direction of the X-axis of the indexing section 2 and a position close to the positive direction of the X-axis of the conveying robot 33 (described later).

[0049] The processing module 3B in the processing section 3 includes a transport robot 33 that transports the substrate WF, and a plurality of liquid processing units 34A, 34B, and 34C that perform substrate processing on the unprocessed substrate WF supplied from the transport mechanism 31. The transport robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support column 33E that mounts these components via a connector 33F and extends in the vertical direction.

[0050] The horizontal driving unit 33A moves the hand 33C and the hand 33D in the horizontal direction. The horizontal driving unit 33A includes a stage 133A, a horizontal slider 133B that moves back and forth in the horizontal direction on the upper surface of the stage 133A, and a horizontal motor 133C that moves the horizontal slider 133B. A track (not shown here) extending linearly is provided on the upper surface of the stage 133A, and the moving direction of the horizontal slider 133B is limited by the track. The movement of the horizontal slider 133B is achieved by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism. The hand 33C and the hand 33D are provided at the top of the horizontal slider 133B. When the horizontal slider 133B is moved along the track by the horizontal motor 133C, the hand 33C and the hand 33D can move forward and backward in the horizontal direction. In other words, the horizontal driving unit 33A moves the hand 33C and the hand 33D in the horizontal direction in the direction away from and close to the support 33E. The horizontal drive unit 33A has a rotary motor 133D that rotates the stage 133A around a rotary axis Z1 along the vertical direction. The rotary motor 133D allows the hand 33C and the hand 33D to rotate around the rotary axis Z1 within a range that does not interfere with the support column 33E.

[0051] The vertical drive unit 33B includes a vertical slider 133G and a vertical motor 133H. The vertical slider 133G is engaged with a track (not shown) extending in the vertical direction provided on the support 33E. The vertical motor 133H moves the vertical slider 133G back and forth in the vertical direction along the track. The movement of the vertical slider 133G is achieved by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.

[0052] The link 33F links the vertical slider 133G and the stage 133A, and supports the stage 133A from below. The vertical slider 133G is moved by the vertical motor 133H, and the stage 133A is moved in the vertical direction. Thus, the hands 33C and 33D can be moved up and down in the vertical direction.

[0053] In addition, the horizontal drive unit 33A does not necessarily move the hand 33C and the hand 33D in parallel with the horizontal direction, and the hand 33C and the hand 33D may be moved in a direction that is a composite of the horizontal direction and the vertical direction. That is, the so-called "moving in the horizontal direction" means moving in a direction that has a horizontal component. Similarly, the vertical drive unit 33B does not necessarily move the hand 33C and the hand 33D in parallel with the vertical direction, and the hand 33C and the hand 33D may be moved in a direction that is a composite of the vertical direction and the horizontal direction. That is, the so-called "moving in the vertical direction" means moving in a direction that has a vertical component.

[0054] The transport robot 33 uses, for example, the hand 33C to carry out an unprocessed substrate WF held by the transport mechanism 31. Next, the transport robot 33 places the substrate WF on the upper surface of a spin base 51A (described later) in the liquid processing unit 34A, for example, from the negative X-axis direction.

[0055] The transport robot 33 receives a processed substrate WF from the liquid processing unit 34A, the liquid processing unit 34B, or the liquid processing unit 34C using the hand 33D, for example. Then, the transport robot 33 delivers the substrate WF to the transport mechanism 31 .

[0056] The liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are stacked in sequence in the positive direction of the Z axis to form a treatment tower TW. Figure 1 In the example of , the number is set to three for simplicity, but it can be more than three. Figure 1 In the figure, it is shown that the liquid processing unit 34A, the liquid processing unit 34B and the liquid processing unit 34C are located in the positive direction of the X-axis of the transport robot 33, but the positions of the liquid processing units 34A, the liquid processing units 34B and the liquid processing units 34C are not limited to this. For example, they can also be arranged in any direction of the positive direction of the X-axis, the positive direction of the Y-axis or the negative direction of the Y-axis of the transport robot 33.

[0057] Figure 2 1 is a diagram schematically showing an example of the structure of a liquid processing unit 34A in a substrate processing apparatus according to the present embodiment. In addition, the structures of the liquid processing unit 34B and the liquid processing unit 34C are also similar to those of the present embodiment. Figure 2The liquid processing unit 34A includes: a box-shaped processing chamber 50 having an internal space; a spin chuck 51 that holds a substrate WF in a horizontal position in the processing chamber 50 and rotates the substrate WF around a vertical rotation axis Z2 passing through the center of the substrate WF; and a cylindrical processing liquid recovery shield 511 that surrounds the spin chuck 51 around the rotation axis Z2 of the substrate WF.

[0058] The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B for carrying the substrate WF into and out of the processing chamber 50 is formed in the partition wall 50A. The opening 50B is opened and closed by a gate 50C. The gate 50C is moved between a closed position (in a closed position) covering the opening 50B by a gate lifting mechanism (not shown). Figure 2 The opening position (indicated by a two-dot chain line in FIG. 1 ) and the opening position (indicated by a two-dot chain line in FIG. 1 ) in which the opening 50B is opened Figure 2 When the substrate WF is carried in or out, the transport robot 33 passes through the opening 50B and allows the hands 33C and 33D to enter the processing chamber 50. Thus, an unprocessed substrate WF can be placed on the upper surface of the spin chuck 51, or a processed substrate WF can be taken away from the spin chuck 51.

[0059] The spin chuck 51 includes: a disk-shaped spin base 51A that vacuum-adsorbs the lower surface of the horizontal substrate WF; a rotation shaft 51C that extends downward from the center of the spin base 51A; and a rotation motor 51D that rotates the spin shaft 51C to rotate the substrate WF adsorbed on the spin base 51A. Figure 2 The vacuum adsorption type chuck illustrated as an example may also be a clamping type chuck having a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the spin base, and the peripheral portion of the substrate WF is clamped by the chuck pins.

[0060] The liquid processing unit 34A includes: a processing liquid nozzle 52, which discharges processing liquid toward the upper surface of the substrate WF held on the rotating chuck 51; a processing liquid arm 152, on which the processing liquid nozzle 52 is installed; a processing liquid tank 53, which stores the processing liquid supplied to the processing liquid nozzle 52; a processing liquid piping 54, which guides the processing liquid in the processing liquid tank 53 to the processing liquid nozzle 52; a liquid feeding device 55 (such as a pump), which transports the processing liquid in the processing liquid tank 53 to the processing liquid piping 54; and a processing liquid valve 56, which opens and closes the interior of the processing liquid piping 54.

[0061] The processing liquid arm 152 includes a rotation drive source 152A, a shaft 152B, and an arm 152C having one end fixed to the upper end of the shaft 152B and the other end of which is mounted a processing liquid nozzle 52. The processing liquid arm 152 rotates the shaft 152B by the rotation drive source 152A, thereby enabling the processing liquid nozzle 52 mounted at the top of the arm 152C to move along the upper surface of the substrate WF held on the spin chuck 51. That is, the processing liquid nozzle 52 mounted at the top of the arm 152C can move in the horizontal direction. Here, the driving of the rotation drive source 152A is controlled by a control unit described later.

[0062] Furthermore, the liquid treatment unit 34A has: a circulation pipe 57, which connects the treatment liquid pipe 54 and the treatment liquid tank 53 on the upstream side (i.e., the treatment liquid tank 53 side) of the treatment liquid valve 56; a circulation valve 58, which opens and closes the inside of the circulation pipe 57; and a temperature adjustment device 59, which adjusts the temperature of the treatment liquid flowing in the circulation pipe 57. The opening and closing of the treatment liquid valve 56 and the circulation valve 58 are controlled by the control unit described later. When the treatment liquid in the treatment liquid tank 53 is supplied to the treatment liquid nozzle 52, the treatment liquid valve 56 is opened and the circulation valve 58 is closed. In this state, the treatment liquid transported from the treatment liquid tank 53 to the treatment liquid pipe 54 by the liquid feeding device 55 is supplied to the treatment liquid nozzle 52. On the other hand, when the supply of the treatment liquid to the treatment liquid nozzle 52 is stopped, the treatment liquid valve 56 is closed and the circulation valve 58 is opened. In this state, the treatment liquid transported from the treatment liquid tank 53 to the treatment liquid piping 54 by the liquid transport device 55 is returned to the treatment liquid tank 53 through the circulation piping 57. Therefore, during the supply stop of the treatment liquid to the treatment liquid nozzle 52, the treatment liquid continues to circulate in the circulation path formed by the treatment liquid tank 53, the treatment liquid piping 54 and the circulation piping 57. The temperature adjustment device 59 adjusts the temperature of the treatment liquid flowing in the circulation piping 57. Therefore, the treatment liquid in the treatment liquid tank 53 is heated in the circulation path during the supply stop and is maintained at a temperature higher than the room temperature.

[0063] In addition, the liquid processing unit 34A has: a rinse liquid nozzle 60 that discharges a rinse liquid toward the upper surface of the substrate WF held on the spin chuck 51; a rinse liquid arm 160, on which the rinse liquid nozzle 60 is mounted at the top; a rinse liquid piping 61 that supplies the rinse liquid from a rinse liquid supply source (not shown here) to the rinse liquid nozzle 60; and a rinse liquid valve 62 that switches the supply and stop of the rinse liquid from the rinse liquid piping 61 to the rinse liquid nozzle 60. As the rinse liquid, DIW (deionized water) or the like is used. The rinse liquid arm 160 has a rotation drive source 160A, a shaft 160B, and an arm portion 160C, one end of which is fixed to the upper end of the shaft 160B and the other end of which the rinse liquid nozzle 60 is mounted. The rinse liquid arm 160 rotates the shaft 160B by the rotation drive source 160A, thereby enabling the rinse liquid nozzle 60 installed at the top of the arm 160C to move along the upper surface of the substrate WF held on the spin chuck 51. That is, the rinse liquid nozzle 60 installed at the top of the arm 160C can move in the horizontal direction. Here, the drive of the rotation drive source 160A is controlled by the control unit described later. After the processing liquid is supplied to the substrate WF through the processing liquid nozzle 52, the rinse liquid is supplied to the substrate WF from the rinse liquid nozzle 60, thereby rinsing the processing liquid attached to the substrate WF.

[0064] The processing liquid recovery shield 511 is arranged to surround the periphery of the rotating chuck 51. Preferably, the processing liquid recovery shield 511 is configured to be raised and lowered in the vertical direction by a motor not shown in the figure. In this case, the upper part of the processing liquid recovery shield 511 is raised and lowered between an upper position at its upper end that is higher than the substrate WF held on the rotating base 51A and a lower position that is lower than the substrate WF. The processing liquid that flies outward from the upper surface of the substrate WF is received by the inner side surface of the processing liquid recovery shield 511. Then, the processing liquid received by the processing liquid recovery shield 511 is suitably discharged to the outside of the processing chamber 50 through the drain port 513 provided at the bottom of the processing chamber 50. It is preferred to reuse at least a portion of the processing liquid discharged from the drain port 513. In other words, it is preferred to reuse at least a portion of the discharged processing liquid by returning to the processing liquid tank 53.

[0065] Furthermore, the liquid processing unit 34A includes a sensor 81 for measuring the film thickness of the film provided on the substrate WF and a measuring arm 181 having the sensor 81 attached to the tip thereof.

[0066] As the sensor 81, for example, an optical displacement sensor or the like is used. Figure 6 In the case of the processed film 501 described later, the measurement irradiation wavelength of the light irradiated from the sensor 81 to the opposing substrate WF etc. during measurement is adjusted, thereby making it possible to measure the film thickness of various films (eg, silicon film).

[0067] The measuring arm 181 includes a rotational drive source 181A, a shaft 181B, and an arm 181C having one end fixed to the upper end of the shaft 181B and the other end of which is mounted a sensor 81. The shaft 181B is rotated by the rotational drive source 181A, so that the sensor 81 mounted at the top end of the arm 181C can be moved along the upper surface of the substrate WF held on the spin chuck 51. That is, the sensor 81 mounted at the top end of the arm 181C can be moved in the horizontal direction. Here, the driving of the rotational drive source 181A is controlled by a control unit described later.

[0068] The measuring arm 181 is located at a position that is at least farther from the upper surface of the substrate WF than the processing liquid arm 152 or the rinsing liquid arm 160. That is, the vertical height H1 of the measuring arm 181 (the length from the upper surface of the rotating base 51A to the arm portion 181C or the sensor 81) is higher than the vertical height H2 of the processing liquid arm 152 (the length from the upper surface of the rotating base 51A to the arm portion 152C or the processing liquid nozzle 52) or the vertical height H3 of the rinsing liquid arm 160 (the length from the upper surface of the rotating base 51A to the arm portion 160C or the rinsing liquid nozzle 60). In this way, by locating the measuring arm 181 at a position away from the upper surface of the substrate WF, when the processing liquid or the like is ejected onto the upper surface of the substrate WF, the rebounding liquid or the like can be prevented from adhering to the sensor 81. In addition, it may also be as follows Figure 2 As illustrated, the measuring arm 181 is located farther from the upper surface of the spin base 51A than both the processing liquid arm 152 and the rinse liquid arm 160 .

[0069] Figure 3 1 is a top view showing an example of the position of each arm in the liquid processing unit 34A. The processing liquid arm 152, the rinse liquid arm 160, and the measuring arm 181 are movable in the radial direction (at least in the direction having a radial component) of the spin base 51A, and can scan the upper surface of the substrate WF rotating on the spin chuck 51.

[0070] Figure 4 is a substrate processing device 1 ( Figure 1 ) is a functional block diagram showing an example of the connection relationship between the control unit 7 and other elements in the embodiment of the present invention. The control unit 7 is connected to the operating units of each liquid processing unit (such as the processing liquid valve 56, the circulation valve 58, the rinse liquid valve 62, the gate 50C or the rotary motor 51D, etc.), the driving unit that drives the conveying mechanism 31 (such as the motor for reciprocating the conveying mechanism 31, etc.), the operating unit of the indexing robot 23 (such as the motor for driving the multi-joint arm 23B, etc.), and the operating unit of the conveying robot 33 (such as the horizontal motor 133C, the rotary motor 133D or the vertical motor 133H, etc.), and controls their actions.

[0071] The hardware structure of the control unit 7 is the same as that of a general computer. That is, the control unit 7 has a central processing unit (CPU) 71 that performs various calculations, a read-only memory (ROM) 72 that stores basic programs, a random access memory (RAM) 73 that stores various information and can be read and written, and a non-temporary storage unit 74 that stores control applications (programs) or data. The CPU 71, ROM 72, RAM 73 and storage unit 74 are connected to each other through bus wiring 75 and the like. The control application or data can also be provided to the control unit 7 in a state recorded in a non-temporary recording medium (such as a semiconductor memory, an optical medium or a magnetic medium). In this case, a reading device that reads the control application or data from the recording medium can be connected to the bus wiring 75. In addition, the control application or data can also be provided to the control unit 7 from a server or the like via a network. In this case, a communication unit that performs network communication with an external device can be connected to the bus wiring 75.

[0072] An input unit 76 and a display unit 77 are connected to the bus wiring 75. The input unit 76 includes various input devices such as a keyboard and a mouse. An operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as a liquid crystal monitor, and displays various information.

[0073] Figure 5 1 is a top view schematically showing an example of the structure of a substrate WF processed by the substrate processing method. The substrate processing method of this embodiment processes at least one substrate WF, and preferably processes a plurality of substrates WF in sequence through each liquid processing unit such as the aforementioned liquid processing unit 34A. Each substrate WF has a circular shape having a radius R in the radial direction. In addition, each substrate WF has a plurality of chip regions RS.

[0074] Figure 6 It is along Figure 5A schematic partial cross-sectional view along line VI-VI of the substrate WF. The substrate WF has a processed film 501 and a device structure layer 502. The processed film 501 has a surface 501a and a surface 501b opposite thereto in the thickness direction (vertical direction in the figure). The device structure layer 502 has a surface 502a facing the surface 501b, and a surface 502b opposite thereto. The device structure layer 502 includes a semiconductor layer. The processed film 501 is typically a semiconductor substrate, such as a silicon substrate. In each chip region RS, a structure that becomes a semiconductor device is provided. In addition, after the substrate processing method in the present embodiment, several additional steps are further performed to obtain a semiconductor device as a final product. These additional steps include the steps of cutting out each chip region RS by cutting the substrate WF.

[0075] The processed film 501 can be formed as follows: wf The substrate is ground to form a substrate having a thickness of d gr Typically, the edge of the substrate is not polished. In this case, Figure 6 As shown in FIG. 1 , the substrate WF has a locally thick portion at an edge portion having a width of about several mm. The following description will be made while ignoring this thick portion.

[0076] In the first embodiment, the semiconductor device is a vertical power device. Typically, the vertical power device has a pair of main electrodes (e.g., a source / drain pair, an emitter / collector pair, or an anode / cathode pair). One of the pair of main electrodes is already provided on the surface 502b, and the other of the pair of main electrodes is formed by the substrate processing method in the present embodiment. gr Reduced to thickness d tgt After that, it is formed on the surface 501a. By making the thickness d tgt By making the thickness d tgt The semiconductor layer included in the device structure layer 502 can be an epitaxial layer formed on the processed film 501. The semiconductor layer and the epitaxial layer can be optically distinguished due to the difference in refractive index.

[0077] Next, refer to Figures 7 to 9 , while the substrate processing method in this embodiment is described below. In addition, the substrate processing method is performed by a substrate processing device 1 ( Figure 1 Specifically, the substrate processing method is performed in the following state: the substrate is contained in the substrate container 21 ( Figure 1) is carried into any liquid processing unit via the indexing robot 23, the transport mechanism 31, and the transport robot 33, and is then held on the spin chuck 51 ( Figure 2 ).

[0078] Figure 7 and Figure 8 These are a timing chart and a flowchart respectively showing an example of the substrate processing method in the first embodiment.

[0079] First, perform the flushing process ( Figure 8 :Step ST11). In the flushing process, the control unit 7 ( Figure 4 ) is controlled by the flushing liquid nozzle 60 ( Figure 3 ) discharges the rinse liquid. As a result, the surface 501a ( Figure 6 ) is washed away. As the rinse liquid, for example, DIW (deionized water) is used.

[0080] Next, drying is performed ( Figure 8 : Step ST12). In the drying process, after IPA (isopropyl alcohol) or the like is supplied to the substrate WF under the control of the control unit 7, the substrate WF is dried by rotating the spin base 51A.

[0081] Next, the thickness distribution of the treated film 501 in the radial direction is measured ( Figure 8 : Step ST21). Specifically, the sensor 81 is scanned in the radial direction while the substrate WF is rotated, thereby measuring the thickness distribution. The scanning of the sensor 81 is performed by rotating the arm portion 181C of the measuring arm 181 under the control of the control unit 7. Fig. 9 is a schematic diagram for explaining an example of the above-mentioned step ST21. The distribution of the thickness d about the radial position r is obtained by scanning SC of the sensor 81. If the speed of scanning SC is sufficiently slow compared to the rotation speed of the substrate WF, the thickness distribution dependent on the radial direction can be obtained uniquely. For example, when the positions r of the sensor 81 in the radial direction are r1, r2 and r3 respectively, the average value of the thickness of the processed film 501 on the circumferences C1, C2 and C3 is detected as the thickness d.

[0082] Next, the control unit 7 performs arithmetic processing. First, according to the thickness distribution ( Fig. 9 ) Calculate the average thickness d avg ( Figure 8 :Step ST22A). Next, at least one candidate position ( Figure 8 : Step ST23A). Specifically, the thickness distribution has an average thickness d avg At least one radial position r of is extracted as at least one candidate position. Fig. 9In the example shown, three positions r are extracted. avg1 、r avg2 、r avg3 。

[0083] Next, the determination of the measurement position ( Figure 8 : Step ST24) is performed. Specifically, at least one of at least one (three in the above example) candidate positions is determined as at least one measurement position. Hereinafter, an example of this method will be described in detail.

[0084] Fig.10 FIG. is an example of a screen SW displayed by a display unit 77 ( Figure 4 ) to an operator in order to set the determination conditions for the measurement position. The screen SW has a thickness distribution window DA1 and a selection window DA2. Preferably, in addition to the thickness distribution, the thickness distribution window DA1 also displays the above-mentioned candidate positions. In the illustrated example, the display positions r avg1 、r avg2 and r avg3 each have coordinates of 16 mm, 55 mm, and 125 mm. In addition, preferably, the thickness distribution window DA1 displays a recommended lower limit value r L and a recommended upper limit value r U . The recommended lower limit value r L and the recommended upper limit value r U are predetermined positive values, and with respect to the radius R of the substrate WF, 0 < r L < r U < R. Preferably, R / 3 ≤ r L < 2R / 3 and R / 3 < r U ≤ 2R / 3, and in Fig.10 , r L = R / 3 and r U = 2R / 3. In addition, Fig.10 The example corresponds to a case where R is about 150 mm.

[0085] Regarding the position r, the range of 0 ≤ r < R / 3 is a range where the processing liquid becomes thick and its liquid surface is likely to become unstable when the processing liquid nozzle 52 is near the center of the substrate WF, and it is not suitable for high-precision thickness measurement. On the other hand, in the range of 2R / 3 < r, the thickness measurement is likely to be disturbed due to the influence of the rotation of the substrate WF, and in the case of a large eccentricity of the rotation, the measurement is particularly disturbed. In addition, since the length of the circumference to be measured is large, the measured values are likely to deviate.

[0086] An input unit 76 ( Figure 4 ) can accept at least one candidate position (in Fig.10 are three candidate positions r avg1 、r avg2 、r avg3) is determined as an instruction for at least one measurement position. Specifically, it is acceptable for the operator to select which of the buttons BT1 to BT5 of the selection window DA2 is selected. When the operator selects button BT1, the position r avg1 is included in the measurement position. When button BT2 is selected, position r avg2 is included in the measurement position. When button BT3 is selected, position r avg3 When the operator selects button BT4, the closest recommended position r among the plurality of candidate positions is selected as the measurement position. c The candidate position is used as the measurement position. Recommended position r c The recommended lower limit is preferably L Above and recommended upper limit r U The following is an example of a recommended lower limit value r L And the recommended upper limit r U The average value of Fig.10 In the example, when button BT4 is selected, the result will be position r avg2 When the operator selects button BT5, the measurement position is limited to r L Above U Below. Fig.10 In the example, when button BT5 is selected, the result will be position r avg2 Determine the measurement position.

[0087] In addition, in the above content, the case where the instructions given to the operator when determining the measurement position have been described, but it can also be determined by the control unit 7 without the operator's instructions. In addition, the number of measurement positions is any number greater than one. In the case where the number of measurement positions is multiple, in the monitoring of the thickness change over time described later, the thickness of each measurement position can be monitored by appropriately moving the sensor 81. The representative thickness calculated based on the thickness at these multiple measurement positions can also be regarded as the thickness at the measurement position. The representative thickness is, for example, the average of the thicknesses at multiple measurement positions. In the case where the number of measurement positions is one, in the monitoring of the thickness change over time described later, the position of the sensor 81 can be fixed at the measurement position, or it can leave the measurement position during the intermittent monitoring of the measurement position.

[0088] Next, the supply of the treatment liquid ( Figure 8 :Step ST25). Thus, while the substrate WF is rotated, the processing liquid is supplied from the processing liquid nozzle 52 to the processing film 501 of the substrate WF. Thus, the processing film 501 of the substrate WF is subjected to etching treatment or the like. For example, a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO3), i.e., fluorine nitric acid, is used to etch the silicon film as the processing film 501.

[0089] Next, while the processing liquid is supplied as described above, the change in thickness over time is monitored ( Figure 8 Specifically, while the substrate WF is rotated, the sensor 81 is used to measure at least one of the above-mentioned measurement positions (for example, Fig. 9 Position r in avg2 ) monitor the change in thickness of the processed film 501 over time.

[0090] When supplying the processing liquid, it is preferred that the processing liquid nozzle 52 be given a periodic displacement SC2 in the radial direction ( Figure 3 In addition, it is also preferred to give the sensor 81 a periodic displacement SC1 in the radial direction ( Figure 3 ). In this case, the time point when the sensor 81 is closest to the center of the substrate WF is different from the time point when the processing liquid nozzle 52 is closest to the center of the substrate WF. Preferably, the period of the displacement SC1 of the sensor 81 is the same as the period of the displacement SC2 of the processing liquid nozzle 52, and the time point when the sensor 81 is closest to the center of the substrate WF is the time point when the processing liquid nozzle 52 is farthest from the center of the substrate WF. Thus, it is easy to ensure the distance between the position where the processing liquid hits the substrate WF and the position of the sensor 81. Therefore, it is easy to ensure the distance between the position where the liquid surface of the processing liquid is unstable and the position of the sensor 81. As a result, the measurement of the sensor 81 can be stably performed.

[0091] Next, the supply of the processing liquid is stopped ( Figure 8 Specifically, based on at least one measurement position (e.g., Fig. 9 Position r in avg2 ) on the surface of the substrate WF, and the supply of the processing liquid to the surface of the substrate WF is stopped. The specific method is described later. Preferably, step ST27 is performed in a manner that the thickness of the processed film 501 is maintained at more than 20 μm at at least one measuring position, and more preferably, it is performed in a manner that the thickness is maintained at more than 30 μm.

[0092] Next, rinse ( Figure 8 : Step ST31). Specifically, the rinse liquid is ejected from the rinse liquid nozzle 60 under the control of the control unit 7. Thus, the processing liquid on the substrate WF is rinsed off. As the rinse liquid, for example, DIW (deionized water) can be used. Then, the drying process is performed in the same manner as in the aforementioned step ST12 ( Figure 8 :Step ST32). Then, in order to confirm the result of substrate processing, the thickness distribution can be measured again ( Figure 8 :Step ST41).

[0093] Through the above, the substrate processing of the first embodiment is performed.

[0094] Fig.11 This is a decision to stop the supply of the processing liquid (step ST27 ( Figure 8 )) is a graph illustrating an example of a method for measuring the time points of the graph. In the graph, line G act is the detected value of the thickness d at the measuring position, when d=d cor Time t = t act When d cor =d tgt +MG, thickness d tgt is the target value, and the correction value MG is a pre-determined correction thickness. Even if the supply of the processing liquid is stopped, it still takes a certain amount of time to completely remove the processing liquid from the substrate WF, so the substrate processing will not stop immediately. The correction value MG is determined in consideration of this point, for example, about 1 to 2 μm.

[0095] As mentioned above, the substrate processing method in this embodiment can process multiple substrates WF in sequence. Figure 8 After the first substrate WF is processed by the method shown, the second substrate WF is processed by the method again. Here, the second substrate WF is a substrate that is processed immediately after the first substrate WF. At this time, at least a part of the processing liquid supplied from the processing liquid nozzle 52 to the processed film 501 of the first substrate WF can be reused as the processing liquid supplied from the processing liquid nozzle 52 to the processed film 501 of the second substrate WF. In this way, the consumption of the processing liquid can be suppressed, but on the other hand, the change of the processing liquid characteristics over time cannot be ignored. Here, as in the present embodiment, it is more important to monitor the progress of the substrate processing method by the sensor 81 and adjust the processing conditions such as the processing time according to the results.

[0096] As described above, when the first substrate WF and the second substrate WF are processed, the monitoring result of the change over time of the first substrate WF can be used. Figure 8 : Step ST26), and as shown in line G min and line G max ( Fig.11 ) is shown, the predicted range of the change of the second substrate WF over time is calculated. act The slope of the line G is determined by multiplying the slope by a predetermined coefficient greater than 0 and less than 1 and a predetermined coefficient greater than 1. max and line G min In this case, if at a given time point (e.g. time t = t act ), line G of the second substrate WF act Departure line G max With line Gmin When the range of time is exceeded, it is preferred that the control unit 7 issues a warning to the operator. Thus, the operator can be warned that the speed of the substrate processing has changed significantly compared to the substrate processing just before. In addition, the control unit 7 not only issues a warning, but also can stop the continuous processing of the substrate WF.

[0097] Fig.12 1 is a graph illustrating a modified example of measuring the thickness distribution in the first embodiment. This modified example is particularly preferred when the structure of the vertical power device provided in the chip region RS has a trench gate structure. Corresponding to the trench, the thickness distribution of the processed film 501 has a locally small value as shown in the figure. Since such a value is excluded from consideration in the subsequent arithmetic processing, in this modified example, the estimated thickness (at Fig.12 In other words, only the thickness within the predetermined allowable range in the thickness distribution is used for the subsequent arithmetic processing (in this embodiment, 100 μm). Fig.13 The information of the estimated thickness can be received from the input unit 76. The allowable range is, for example, ±2% based on the estimated thickness. Fig.12 In the example, it is 98 μm or more and 102 μm or less.

[0098] <Implementation Method 2>

[0099] In the second embodiment, similarly to the first embodiment, in the chip region RS ( Figure 5 and Figure 6 ) are provided with structures that become semiconductor devices. However, in this embodiment 2, unlike the embodiment 1, the semiconductor device is a non-power device (for example, any one of an image sensor device, a memory device, and a logic device). The processed film 501 ( Figure 6 ) is necessary in the manufacturing process of these non-power devices, but is not necessary as the final product (for example, a base substrate used to temporarily support the device structure required in the end). Here, it is preferred to remove the processed film 501 as much as possible by the substrate processing method in this embodiment. By removing the processed film 501, the semiconductor device can be miniaturized. In particular, when the light-receiving surface of the image sensor device is surface 502a ( Figure 6 ), since the processed film 501 blocks the light path, this removal is important for ensuring sensitivity. On the other hand, when the substrate is processed excessively, there is a risk of accidentally eroding the device structure layer 502 ( Figure 6 ), and the characteristics of the semiconductor device may be adversely affected.min In order to fully prevent erosion, it is usually preferred not to set the minimum thickness d min However, when the surface 502a of the device structure layer 502 is protected by an etching stop film (eg, a silicon nitride film), the minimum thickness d can be reduced to zero relatively easily. min Reduce to zero.

[0100] In the substrate processing method, in the above-mentioned embodiment 1, the average thickness d is managed avg ( Fig. 9 ), in contrast, in the present embodiment 2, the minimum thickness d of the processed film 501 is managed for the above reasons. min Hereinafter, the difference from the substrate processing method in the first embodiment will be mainly described.

[0101] Fig.13 This is a flowchart showing an example of a substrate processing method in Embodiment 2. The steps up to step ST21 are the same as those in Embodiment 1.

[0102] Next, the control unit 7 performs arithmetic processing. Specifically, first, according to the thickness distribution ( Fig.14 ) Calculate the minimum thickness d min ( Fig.13 :Step ST22B). Next, at least one candidate position ( Figure 8 : Step ST23B). Specifically, the thickness distribution has a minimum thickness d min At least one radial position r of is extracted as at least one candidate position. Fig.14 In the example shown, a position r is extracted min .

[0103] Next, the determination of the measurement position is performed ( Figure 8 :Step ST24). Specifically, at least one of the at least one candidate position is determined as at least one measurement position. Fig.14 In the example of min , so it is directly determined as the measurement position. In addition, there is a possibility of extracting multiple candidate positions based on the effective digits of the thickness d, etc. In this case, at least one measurement position can be appropriately selected from them by the same method as the method described in the first embodiment. Then, the supply of the treatment liquid is started as in the first embodiment ( Figure 8 : Step ST25), and monitoring of thickness changes over time ( Figure 8 :Step ST26).

[0104] Next, the supply of the processing liquid is stopped ( Figure 8Specifically, based on at least one measurement position (at Fig.14 In the example, the position is r min ) of the processed film 501, and the supply of the processing liquid to the surface of the substrate WF is stopped. Preferably, step ST27 is performed in a manner that the thickness of the processed film 501 is reduced to less than 10 μm at at least one measurement position, for example, to about 4 μm. In addition, the time point for stopping the supply of the processing liquid can refer to Fig.11 It is determined by the same method as that described in Implementation Example 1.

[0105] Thereafter, the substrate processing of this embodiment is performed by performing step ST31, step ST32, and step ST41 in the same manner as in Embodiment 1. In addition, except for the features particularly described above, the present embodiment is substantially the same as Embodiment 1, and thus the description thereof will not be repeated.

[0106] In addition, both implementation modes 1 and 2 can be implemented according to Figure 7 However, the substrate processing method of the present invention is not limited to this timing sequence. Fig.15 As shown, the thickness distribution can also be measured during the rinsing process, thereby shortening the process time.

[0107] In the above-described embodiments, there are cases where the material, size, shape, relative configuration relationship or implementation conditions of these constituent elements are also recorded, but these are all examples in all aspects and are not limited to the contents recorded in the specification of this application. Therefore, countless unillustrated variations and equivalents can be conceived as being within the technical scope disclosed in the specification of this application. For example, it includes the case where at least one constituent element is deformed, added or omitted.

[0108] In addition, each component described in the above-described embodiments can be conceived as software or firmware, or can also be conceived as corresponding hardware. In both concepts, these components are referred to as "parts" or "processing circuits" (circuitry), etc.

[0109] [Description of Reference Numerals]

[0110] 1: Substrate processing equipment

[0111] 7: Control Department

[0112] 34A: Liquid Handling Unit

[0113] 52: Treatment fluid nozzle

[0114] 76: Input

[0115] 77: Display unit

[0116] 81: Sensor

[0117] 501: Treated film

[0118] 502: Device construction layer

[0119] 511: Processing fluid recovery shield

[0120] 513: Drain port

[0121] RS: Chip area

[0122] WF: substrate

Claims

1. A substrate processing method, processing at least one substrate, the substrate having a radial direction, having a plurality of chip regions provided with a structure forming a power device, and provided with a film to be processed; wherein: The substrate processing method has the following features: Step (a), measuring the thickness distribution of the processed film in the radial direction by rotating the substrate and scanning the sensor in the radial direction; Step (b), calculating the average thickness of the thickness distribution; Step (c), extracting at least one radial position where the thickness distribution has the average thickness as at least one candidate position; Step (d), determining at least one of the at least one candidate position as at least one measurement position; Step (e), supplying a treatment liquid from a nozzle onto the film to be treated on the substrate while rotating the substrate; Step (f), monitoring the change in thickness of the film to be processed over time at the at least one measuring position by the sensor while rotating the substrate; and Step (g) of stopping supplying the processing liquid onto the surface of the substrate based on the thickness of the film to be processed at the at least one measurement position.

2. The substrate processing method according to claim 1, wherein: The step (g) is performed so that the thickness of the film to be processed is maintained at 20 μm or more at the at least one measurement position.

3. The substrate processing method according to claim 1 or 2, wherein: In the step (e), the nozzle is provided with a periodic displacement in the radial direction. In the step (f), the sensor is provided with a periodic displacement in the radial direction, and a time point when the sensor is closest to the center of the substrate is different from a time point when the nozzle is closest to the center of the substrate.

4. The substrate processing method according to claim 1 or 2, wherein: At least one of the substrates includes a first substrate and a second substrate. The substrate processing method is a substrate processing method in which, after processing the first substrate by performing the steps (a) to (f), the second substrate is processed by performing the steps (a) to (f) again. At least a portion of the processing liquid used in the step (e) for the first substrate is reused as the processing liquid used in the step (e) for the second substrate.

5. The substrate processing method according to claim 4, wherein: The second substrate is a substrate to be processed immediately after the first substrate. The substrate processing method further comprises: a step of calculating a predicted range of the change over time in the step (f) of the second substrate based on the result of the step (f) of the first substrate.

6. The substrate processing method according to any one of claims 1, 2 and 5, wherein: The substrate has a radius R, In the above step (d), a positive value of r satisfying 0 < r L < r U < R, and r L and r U are pre-determined, restricting the above measurement position to r L or more and r U or less.

7. The substrate processing method according to any one of claims 1, 2 and 5, wherein: The above step (d) comprises: Step (d1), displaying the at least one candidate position; and In step (d2), an instruction is received as to which of the at least one candidate position is to be determined as the at least one measurement position.

8. The substrate processing method according to any one of claims 1, 2 and 5, wherein: The above step (a) comprises: Step (a1), receiving information of the estimated thickness of the film to be processed; In the step (a), based on the estimated thickness, only the thickness within a predetermined allowable range is used for the thickness distribution.

9. The substrate processing method according to claim 8, wherein: The power device has a trench gate structure.

10. A substrate processing method, processing at least one substrate, the substrate having a radial direction, having a plurality of chip regions provided with a structure that becomes a non-power device, i.e., a semiconductor device, and provided with a film to be processed; wherein: The substrate processing method has the following features: Step (a), measuring the thickness distribution of the processed film in the radial direction by rotating the substrate and scanning the sensor in the radial direction; Step (b), calculating the minimum thickness of the thickness distribution; Step (c), extracting at least one radial position where the thickness distribution has the minimum thickness as at least one candidate position; Step (d), determining at least one of the at least one candidate position as at least one measurement position; Step (e), supplying a treatment liquid from a nozzle onto the film to be treated on the substrate while rotating the substrate; Step (f), monitoring the change in thickness of the film to be processed over time at the at least one measuring position by the sensor while rotating the substrate; and Step (g) of stopping supplying the processing liquid onto the surface of the substrate based on the thickness of the film to be processed at the at least one measurement position.

11. The substrate processing method according to claim 10, wherein: The step (g) is performed in such a manner that the thickness of the film to be processed is reduced to 10 μm or less at the at least one measuring position.

12. The substrate processing method according to claim 10 or 11, wherein: In the step (e), the nozzle is provided with a periodic displacement in the radial direction. In the step (f), the sensor is provided with a periodic displacement in the radial direction, and a time point when the sensor is closest to the center of the substrate is different from a time point when the nozzle is closest to the center of the substrate.

13. The substrate processing method according to claim 10 or 11, wherein: At least one of the substrates includes a first substrate and a second substrate. The substrate processing method is a substrate processing method in which after processing the first substrate by performing the steps (a) to (f), the steps (a) to (f) are performed again to process the second substrate. At least a portion of the processing liquid used in the step (e) for the first substrate is reused as the processing liquid used in the step (e) for the second substrate.

14. The substrate processing method according to claim 13, wherein: The second substrate is a substrate to be processed immediately after the first substrate. The substrate processing method further comprises: a step of calculating a predicted range of the change over time in the step (f) of the second substrate based on the result of the step (f) of the first substrate.

15. The substrate processing method according to any one of claims 10, 11 and 14, wherein: The substrate has a radius R, In the above step (d), a positive value of r satisfying 0 < r L < r U < R L and r U are pre-determined, restricting the above measurement position to r L or more and r U or less.

16. The substrate processing method according to any one of claims 10, 11 and 14, wherein: The above step (d) comprises: Step (d1), displaying the at least one candidate position; and In step (d2), an instruction is received as to which of the at least one candidate position is to be determined as the at least one measurement position.

17. The substrate processing method according to any one of claims 10, 11 and 14, wherein: The semiconductor device is any one of an image sensor device, a memory device, and a logic device.

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