Wafer processing system and method of controlling temperature of a gas

Abstract

A wafer processing system, a gas injection system, and a method of controlling the temperature of a gas are provided. The wafer processing system includes a wafer processing chamber defining a processing region in which a wafer is processed. The wafer processing system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas for processing the wafer into the processing region. A first gas tube is used to direct the first gas at a first temperature to the gas injector. The gas injection system includes a heated housing that surrounds the gas injector. A second gas tube is configured to direct a heated gas to the heated housing to increase a housing temperature at the heated housing to a second housing temperature. Due to the second housing temperature at the heated housing, the temperature of the first gas in the gas injector is increased from the first temperature to a second temperature.

Description

Technical Field

[0001] This disclosure relates to a wafer processing system and a method for controlling the temperature of a first gas used to process the wafer. Background Technology

[0002] Semiconductor chips are used in a variety of electronic devices, such as mobile phones, laptops, desktop computers, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronics. Semiconductor chips typically undergo one or more processes to produce desired characteristics. Summary of the Invention

[0003] According to some embodiments of this disclosure, a wafer processing system includes a wafer processing chamber, a wafer support, and a gas jetting system. The wafer processing chamber defines a processing area within the wafer processing chamber, wherein a wafer is processed in the processing area; the wafer support is located in the wafer processing chamber and configured to support the wafer in the processing area; the gas jetting system includes: a gas ejector, a first gas pipe, a heating housing, and a second gas pipe. The gas ejector is coupled to the wafer processing chamber and configured to jet a first gas into the processing area, wherein the first gas is used for wafer processing; the first gas pipe is configured to guide the first gas at a first temperature to the gas ejector; the heating housing surrounds the gas ejector; and the second gas pipe is configured to guide heated gas to the heating housing to increase the housing temperature at the heating housing from a first housing temperature to a second housing temperature, wherein, due to the second housing temperature at the heating housing, a temperature of the first gas in the gas ejector increases from the first temperature to the second temperature.

[0004] According to some embodiments of this disclosure, a gas injection system includes a gas injector, a first gas pipe, a heating housing, and a second gas pipe. The gas injector is coupled to a wafer processing chamber and configured to inject a first gas into a processing area defined by the wafer processing chamber, wherein the first gas is used to process a wafer in the processing area; the first gas pipe is configured to guide the first gas at a first temperature to the gas injector; the heating housing surrounds the gas injector; and the second gas pipe is configured to guide heated gas to the heating housing to increase the housing temperature at the heating housing from the first housing temperature to a second housing temperature, wherein the temperature of the first gas in the gas injector rises from the first temperature to the second temperature due to the second housing temperature at the heating housing.

[0005] According to some embodiments of this disclosure, a method for controlling the temperature of a first gas used for processing a wafer includes: directing the first gas at a first temperature to a gas ejector connected to a wafer processing chamber containing the wafer; heating a second gas using a heating device to generate heated gas; directing the heated gas to a heating housing surrounding the gas ejector to raise the temperature of the first gas in the gas ejector from the first temperature to a second temperature; and after raising the temperature of the first gas to the second temperature, ejecting the first gas from the gas ejector into the wafer processing chamber, wherein the first gas is used for wafer processing. Attached Figure Description

[0006] When with attachment Figure 1 When reading this document, the following detailed description will best provide a comprehensive understanding of all aspects of this disclosure. It should be understood that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

[0007] Figure 1 Cross-sectional views of at least some chip processing systems according to some embodiments are shown;

[0008] Figure 2 A perspective view of at least some chip processing systems according to some embodiments is shown;

[0009] Figure 3 Schematic diagrams of at least some chip processing systems according to some embodiments are shown;

[0010] Figure 4 Schematic diagrams of at least some chip processing systems according to some embodiments are shown;

[0011] Figure 5 A flowchart illustrating a method for controlling the temperature of a first gas used to process a wafer, according to some embodiments;

[0012] Figure 6 Exemplary computer-readable media according to some embodiments are illustrated, which may include processor-executable instructions configured to implement one or more of the specified instructions set forth in this disclosure.

[0013] [Symbol Explanation]

[0014] 100: Chip Processing System

[0015] 102: Second gas tube

[0016] 106: Heating housing

[0017] 108: First gas tube

[0018] 110: Gas Injector

[0019] 112: Transformer-coupled plasma coil

[0020] 114: Tablet

[0021] 116: Chip Processing Room

[0022] 118: Chip

[0023] 120: First position

[0024] 122: Processing Area

[0025] 124: Radio Frequency Generator

[0026] 126: Biased RF Generator

[0027] 130: First Opening

[0028] 132: Second position

[0029] 134: Top

[0030] 136: Sidewall

[0031] 140: Chip support

[0032] 142: Opening

[0033] 144: Plasma

[0034] 146: Top surface

[0035] 150: First Gas

[0036] 152: Heated gas

[0037] 202: Part One

[0038] 204: Width

[0039] 206: Width

[0040] 208: Part Two

[0041] 210: Width

[0042] 302: Fourth Gas Pipe

[0043] 304: Second gas

[0044] 306: Heating device

[0045] 402: Container

[0046] 404: Processing Gas

[0047] 406: Fifth Gas Tube

[0048] 408: First Mixing Chamber

[0049] 410: Second Processing Gas

[0050] 412: Sixth Gas Pipe

[0051] 414: Second Mixing Chamber

[0052] 500: Methods

[0053] 502: Steps

[0054] 504: Steps

[0055] 506: Steps

[0056] 508: Steps

[0057] 600: Example

[0058] 602: Method

[0059] 604: Computer Instruction

[0060] 606: Computer-readable data

[0061] 608: Computer-readable media Detailed Implementation

[0062] The following disclosure provides numerous different embodiments or examples for implementing various features of this disclosure. Specific examples of elements and configurations are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first feature on or over a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features such that the first and second features do not need to be in direct contact. Additionally, reference numerals and / or words may be repeated in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0063] Furthermore, spatially relative terms (e.g., "below," "below," "under," "above," "above," etc.) are used here to simply describe the relationship between an element or feature as shown in the figure and another element or feature. In use or operation, these spatially relative terms cover different orientations of the device, in addition to the orientations shown in the figure. Moreover, these devices are rotatable (by 90 degrees or other angles), and the spatially relative descriptive terms used herein can be interpreted accordingly.

[0064] A wafer processing system includes a wafer processing chamber and a gas jetting system. This gas jetting system has a gas ejector coupled to the wafer processing chamber, configured to jet a first gas into a processing area defined by the wafer processing chamber. The first gas is used to process a wafer contained within the processing area. The gas jetting system has a heated housing surrounding the gas ejector, and a gas pipe is configured to guide heated gas into the heated housing to raise the housing temperature of the heated housing from a first housing temperature to a second housing temperature. Due to the second housing temperature of the heated housing, the temperature of the first gas in the gas ejector rises from the first temperature to the second temperature. Compared to a wafer processing system that does not use heated gas and / or does not use a heated housing to raise the temperature of the first gas to the second temperature, implementing a gas jetting system with a heated housing at a second housing temperature to raise the temperature of the first gas from the first temperature to the second temperature can suppress liquefaction and / or crystallization of the first gas, thus reducing the non-gaseous content of the first gas (e.g., at least one of liquid or solid components injected into the processing area). A gas jetting system with a heated housing at a second housing temperature can at least reduce or prevent polymer formation from the components of the first gas on the wafer and / or in the wafer processing chamber. The gas jetting system thus reduces and / or prevents wafer defects associated with polymer formation during processing. Given that this wafer processing system operates more efficiently than other wafer processing systems due to the reduced polymer formation (e.g., the wafer processing chamber requires less cleaning and / or maintenance, fewer wafer defects are generated in the wafer, etc.),...

[0065] Figure 1 A chip processing system 100 according to some embodiments is illustrated. Figure 1 The view shown is a cross-sectional view illustrating some internal aspects of the wafer processing system 100. The wafer processing system 100 includes a wafer processing chamber 116 that defines a processing region 122 in which a wafer 118 is processed. The wafer processing system 100 is configured to process the wafer 118 (e.g., for fabricating one or more semiconductor devices). Processing of the wafer 118 in the processing region 122 may include at least one of etching (e.g., reactive-ion etching, passivation, sputtering, surface cleaning, chemical vapor deposition (CVD), etc.). In some embodiments, processing is performed using plasma established in the processing region 122. Other processing of the wafer 118 is also within the scope of this disclosure.

[0066] The wafer processing system 100 includes a gas injection system configured to inject a first gas 150 into a processing region 122. The first gas 150 is used to process the wafer 118 in the processing region 122. The first gas 150 includes at least one of silicon fluoride (SiF) (e.g., silicon tetrafluoride (SiF4)), silicon bromide (SiBr) (e.g., silicon tetrabromide (SiBr4)), silicon chloride (SiCl) (e.g., silicon tetrachloride (SiCl4)), silicon iodide (SiI) (e.g., silicon tetraiodide (SiI4)), or other suitable gases. The gas injection system includes a first gas pipe 108, a second gas pipe 102, a gas injector 110, and a heating housing 106.

[0067] Gas ejector 110 is coupled to wafer processing chamber 116. Gas ejector 110 is positioned above plate 114 of wafer processing chamber 116. Plate 114 corresponds to a disk, window, jet nozzle, baffle, or other suitable element. Plate 114 comprises at least one of quartz or other suitable materials. Gas ejector 110 is configured to inject a first gas 150 into processing area 122. Other structures and / or configurations of gas ejector 110 and / or plate 114 are within the scope of this disclosure.

[0068] A heating housing 106 surrounds a gas injector 110. The heating housing 106 defines a first opening 130 through which a first gas tube 108 extends into the heating housing 106. The first opening 130 is defined in a top 134 of the heating housing 106 or in another portion of the heating housing 106. The top 134 of the heating housing 106 is located at least above the gas injector 110, in direct or indirect contact with the gas injector 110. In some embodiments, the inner surface of the top 134 of the heating housing 106 is in direct contact with the top surface 146 of the gas injector 110. In some embodiments, a space (e.g., including at least one of air or other gases) exists between the inner surface of the top 134 of the heating housing 106 and the top surface 146 of the gas injector 110.

[0069] A first gas line 108 is configured to direct a first gas 150 at a first temperature to a gas injector 110. The first gas line 108 is fluidly coupled to the gas injector 110 at a first position 120. The first position 120 is typically the position corresponding to the exit of the first gas line 108 and entry of the first gas 150 into the gas injector 110. One or more valves, sealants, O-rings, etc., may be present at the first position 120 to control the flow of the first gas 150 from the first gas line 108 to the gas injector 110.

[0070] The second gas conduit 102 is configured to guide heated gas 152 to the heating housing 106. The second gas conduit 102 is fluidly coupled to the heating housing 106 at a second location 132. The second location 132 is located at a sidewall 136 of the heating housing 106 or at another portion of the heating housing 106. Heated gas 152 flows from the second gas conduit 102 into the heating housing 106 through an opening in the heating housing 106 located at the second location 132. The first gas 150 is isolated from the heated gas 152 such that the heated gas 152 does not enter the gas injector 110, or the first gas 150 and the heated gas 152 do not mix. Other structures and / or configurations of the heating housing 106, the first gas conduit 108, the gas injector 110, and / or the second gas conduit 102 are all within the scope of this disclosure.

[0071] The heated gas 152 includes at least one of heated clean dry air (CDA) or other suitable gas. The heated gas 152 entering the heated housing 106 raises the housing temperature of the heated housing 106 from a first housing temperature to a second housing temperature. The housing temperature is at least one of the following: the temperature of the inner surface of the heated housing 106, the temperature of the outer surface of the heated housing 106, the temperature of the gas injector 110 in the heated housing 106, the temperature of a portion of the first gas pipe 108 in the heated housing 106, the temperature of the location where the heated housing 106 contacts the gas injector 110, or the temperature of a space (e.g., including at least one of air or heated gas 152) between the inner surface of the heated housing 106 and the gas injector 110.

[0072] The second housing temperature at the heating housing 106 raises the temperature of the first gas 150 in the first gas pipe 108, either in the gas injector 110 or a portion of the heating housing 106, from a first temperature to a second temperature. Heat or energy from the heated gas 152 is transferred to the first gas 150, either in the gas injector 110 or in the first gas pipe 108, causing the temperature of the first gas 150 to rise to the second temperature.

[0073] A first gas 150 is subjected to a first pressure in a gas injector 110. The first gas 150 is in a gaseous state at the first pressure and a second temperature. In at least a portion of a first gas tube 108, the first gas 150 is subjected to a second pressure. In some embodiments, the first gas 150 is in a non-gaseous state at the second pressure and the first temperature. The non-gaseous state of the first gas 150 corresponds to a substance of the first gas 150 being at least one of partially gaseous, at least partially liquid, or at least partially solid. In some embodiments, the second pressure is the same as the first pressure. In some embodiments, the second pressure is different from the first pressure. At the first pressure, the second temperature exceeds or is approximately equal to the boiling point of the first gas 150, such that the first gas 150 in the gas injector 110 is in a gaseous state. In some embodiments, the first gas 150 comprises a single compound. In some embodiments, the first gas 150 comprises multiple compounds (e.g., a gas mixture), wherein each gas in the gas mixture has a different boiling point at the first pressure. At the first pressure, the second temperature exceeds or is approximately equal to the highest boiling point of the different boiling points of the gas mixture. In some embodiments, the second temperature is at least 56 degrees Celsius. Other values ​​for the second temperature are also within the scope of this disclosure.

[0074] A gas injector 110 is configured to inject a first gas 150 into a processing zone 122. The first gas 150 is in a gaseous state when injected into the processing zone 122, for example, due to a temperature increase from a first temperature to a second temperature. The first gas 150 flows through at least one of the gas injector 110 or the plate 114 and enters the processing zone 122. In some embodiments, the first gas 150 flows from the gas injector 110 through one or more openings 142 within the plate 114 into the processing zone 122. The plate 114 provides a substantially uniform flow or distribution of the first gas 150 into the processing zone 122. At least a portion of the gas injector 110 is above one or more openings 142. Other structures and / or configurations of the gas injector 110 and / or the plate 114 are within the scope of this disclosure.

[0075] The wafer processing chamber 116 includes one or more transformer-coupled plasma (TCP) coils 112 above a flat plate 114. The wafer processing system 100 includes a radio frequency (RF) generator 124 electrically coupled to the one or more TCP coils 112. The wafer processing system 100 includes a bias RF generator 126 coupled to the wafer processing chamber 116. In some embodiments, the bias RF generator 126 is coupled to a wafer support 140 within the wafer processing chamber 116. The wafer support 140 is configured to support a wafer 118 in a processing region 122. The wafer support 140 includes at least one of a wafer chuck, an electrostatic chuck, or other suitable configuration. Other configurations and structures of the one or more TCP coils 112, the RF generator 124, the bias RF generator 126, and / or the wafer support 140 are within the scope of this disclosure.

[0076] A wafer processing system 100 is configured to establish plasma 144 from a first gas 150 in a wafer processing chamber 116. Plasma 144 is used for processing wafer 118 (e.g., etching wafer 118). The wafer processing system 100 establishes plasma 144 using at least one of one or more transformer-coupled plasma coils 112, an RF generator 124, and / or a bias RF generator 126. The RF generator 124 generates first RF power (e.g., having a frequency between approximately 12 MHz and approximately 15 MHz or other suitable frequency) and applies the first RF power to one or more transformer-coupled plasma coils 112. The first RF power applied to the one or more transformer-coupled plasma coils 112 generates an electromagnetic field to establish plasma 144 from the first gas 150 (e.g., by accelerating electrons in the first gas 150 or ionizing the first gas 150). A bias RF generator 126 generates bias RF power (e.g., having a frequency between approximately 12 MHz and approximately 15 MHz or other suitable frequency) and applies the bias RF power to the wafer support 140. In some embodiments, the bias RF generator 126 controls the bias RF power to control the ion bombardment force in the wafer processing chamber 116 or to obtain one or more desired processing characteristics (e.g., one or more etching characteristics or at least one of one or more other processing characteristics). The interactions between one or more transformer-coupled plasma coils 112, RF generator 124, bias RF generator 126, and / or wafer support 140 are all within the scope of this disclosure.

[0077] In some embodiments, the heating housing 106 comprises a non-conductive material. The non-conductive material of the heating housing 106 includes at least one of polytetrafluoroethylene (PTFE) or other suitable materials. In some embodiments, the second gas pipe 102 comprises a non-conductive material. The non-conductive material of the second gas pipe 102 includes at least one of polytetrafluoroethylene or other suitable materials. Compared to the pipes and / or housings of other wafer processing systems that contain conductive materials, the heating housing 106 and / or the second gas pipe 102 do not affect the electromagnetic field or have a minor effect on the electromagnetic field. Other structures and / or configurations of the heating housing 106 and / or the second gas pipe 102 are within the scope of this disclosure.

[0078] In some embodiments, the heating housing 106 includes an exhaust port (not shown) configured to direct at least some of the heated gas 152 from the heating housing 106 to the outside of the heating housing 106. In some embodiments, the gas injection system includes a third gas conduit (not shown) configured to direct at least some of the heated gas 152 discharged from the heating housing 106. In some embodiments, at least some of the heated gas 152 is reused, recirculated, etc., to heat one or more other articles and / or to continue heating the heating housing 106. Other structures and / or configurations of the heating housing 106, the exhaust port, and / or the third gas conduit are within the scope of this disclosure.

[0079] Figure 2 A perspective view of a heating housing 106, a first gas pipe 108, and a second gas pipe 102 of a wafer processing system 100 according to some embodiments is illustrated. In some embodiments, the heating housing 106 has a cylindrical shape. In some embodiments, the width 204 of a first portion 202 of the second gas pipe 102 is greater than the width 206 of a second portion 208 of the second gas pipe 102. In some embodiments, the width 204 of the first portion 202 of the second gas pipe 102 is less than or approximately equal to the width 206 of the second portion 208 of the second gas pipe 102. In some embodiments, the width 210 of the first gas pipe 108 is approximately equal to the width 206 of the second portion 208 of the second gas pipe 102. In some embodiments, the width 210 of the first gas pipe 108 is different from the width 206 of the second portion 208 of the second gas pipe 102. Other shapes, structures, and configurations of the heating housing 106, the first gas pipe 108, and / or the second gas pipe 102 are within the scope of this disclosure.

[0080] Figure 3A schematic diagram of a heating device 306 of a wafer processing system 100 according to some embodiments is illustrated. In some embodiments, the gas injection system includes a fourth gas conduit 302 configured to direct a second gas 304 to the heating device 306. The second gas 304 includes at least one of clean, dry air or other suitable gases. The heating device 306 heats the second gas 304 to produce a heated gas 152. In some embodiments, the heating device 306 includes a heating coil (not shown) configured to heat the second gas 304 as it flows through the heating device 306 to produce the heated gas 152. In some embodiments, the heating device 306 is coupled to the second gas conduit 102 such that the heated gas 152 exits the heating device 306 and enters the second gas conduit 102. Other structures and configurations of the heating device 306, the fourth gas conduit 302, and / or the second gas conduit 102 are within the scope of this disclosure.

[0081] In some embodiments, heating device 306 is configured to heat second gas 304 to produce heated gas 152 having a heated gas temperature. In some embodiments, heating device 306 controls the temperature of the heated gas based on one or more feedback signals. The one or more feedback signals include at least one of one or more pressure signals, one or more temperature signals, or one or more other suitable signals. In some embodiments, one or more pressure signals are received from one or more pressure sensors configured to measure one or more pressures (e.g., at least one of a first pressure of the first gas 150 in gas injector 110 or a second pressure of the first gas 150 in first gas pipe 108). The one or more pressure sensors include at least one pressure sensor located within or above gas injector 110, a pressure sensor located within or above first gas pipe 108, or a pressure sensor placed in another suitable location. This one or more pressure signals indicate one or more pressures. In some embodiments, one or more temperature signals are received from one or more temperature sensors configured to measure one or more temperatures, such as the temperature of the housing, the temperature of the first gas 150 in the gas injector 110, the temperature of the first gas 150 in the first gas pipe 108, the temperature of the first gas pipe 108, the temperature of the gas injector 110, the temperature of the outer surface of the heated housing 106, the temperature of the inner surface of the heated housing 106, the temperature of the second gas pipe 102, the temperature of the heated gas 152 in the second gas pipe 102, the temperature of the heated gas 152 in the gas injector 110, the temperature of a space (e.g., a space between the inner surface of the heated housing 106 and the gas injector 110 filled with heated gas 152), or the temperature at another suitable location of the wafer processing system 100. The one or more temperature sensors include at least one of the following: a temperature sensor located inside or above the gas injector 110, a temperature sensor located inside or above the first gas pipe 108, a temperature sensor located inside or above the second gas pipe 102, a temperature sensor located inside or above the heated housing 106, or a temperature sensor placed at another suitable location. One or more temperature signals indicate one or more temperatures. Heating device 306 controls the temperature of the heated gas 152 based on the composition of the first gas 150 or at least one of one or more feedback signals, such that a second temperature of the first gas 150 exceeds or is approximately equal to the boiling point of the first gas 150, thereby suppressing liquefaction and / or crystallization of the first gas 150 and maintaining the first gas 150 in a gaseous state. Other structures and / or configurations of heating device 306, one or more pressure sensors, and / or one or more temperature sensors are within the scope of this disclosure.

[0082] Figure 4A schematic diagram illustrating a container 402 and one or more mixing chambers of a wafer processing system 100 according to some embodiments is shown. The container 402 is configured to store a process gas 404. In some embodiments, for example, using one or more mixing chambers, the process gas 404 is mixed with one or more gases to produce a first gas 150. The one or more mixing chambers include at least one of a first mixing chamber 408, a second mixing chamber 414, or one or more other mixing chambers. The process gas 404 is directed to the first mixing chamber 408 via a fifth gas conduit 406. The first mixing chamber 408 is configured to mix the process gas 404 with one or more first gases to produce a second process gas 410, which comprises a mixture of the process gas 404 and one or more first gases. The second process gas 410 is directed to the second mixing chamber 414 via a sixth gas conduit 412. The second mixing chamber 414 is configured to mix the second process gas 410 with one or more second gases to produce a first gas 150 comprising a mixture of the second process gas 410 and one or more second gases. In some embodiments, a second mixing chamber 414 is coupled to a first gas tube 108, such that a first gas 150 exits the second mixing chamber 414 and enters the first gas tube 108. In some embodiments, the pressure of the first gas 150 in the first gas tube 108 is higher than the pressure of the process gas 404 in the fifth gas tube 406 (e.g., due to mixing the process gas 404 with at least one of one or more first gases or one or more second gases). In some embodiments, the boiling point of the process gas 404 of the first gas 150 in the first gas tube 108 is higher than the boiling point of the process gas 404 in the fifth gas tube 406 (e.g., due to the pressure of the first gas 150 in the first gas tube 108 being higher than the pressure of the process gas 404 in the fifth gas tube 406). Therefore, the temperature required to maintain the gaseous state of the first gas 150 in the first gas tube 108 is higher than the temperature required to maintain the gaseous state of the process gas 404 in the fifth gas tube 406. The boiling point of the process gas 404 is the highest of one or more boiling points of one or more gases in the first gas 150. In some embodiments, the heating device 306 controls the temperature of the heated gas 152 such that the second temperature of the first gas 150 exceeds or is approximately equal to the temperature required to suppress the liquefaction and / or crystallization of the process gas 404 and to maintain the process gas 404 in a gaseous state. Therefore, when injected into the processing zone 122, the first gas 150 is in a gaseous state, and almost none of the first gas 150 is in a liquid or solid state. Other structures and / or configurations of the container 402, one or more mixing chambers, and / or the first gas 150 are within the scope of this disclosure.

[0083] In some wafer processing systems, one or more portions of the wafer processing chamber (e.g., the quartz disk of the wafer processing chamber) are directly heated (e.g., using a heating tape). Using a heating tape above a threshold temperature can damage at least one of the quartz disk, other portions of the wafer processing chamber, or the wafer housed within the wafer processing chamber. If the temperature of the heating tape is above the threshold temperature, it can cause at least one of the following: the substrate, photoresist, or other substances formed within and / or on the wafer. The temperature of the heating tape can be set below the threshold temperature so that the heating tape does not damage at least one of the quartz disk, other portions of the wafer processing chamber, or the wafer. However, if the temperature of the heating tape is below the threshold temperature, it may be insufficient to maintain the gaseous state of the process gas used in the wafer processing chamber. Therefore, if the process gas entering the wafer processing chamber is at least partially liquid or at least partially solid, at least one of the following will occur: polymer formation, damage to the wafer processing chamber, or formation of defects inside and / or on the wafer. By simultaneously executing the wafer processing system 100 and the heated housing 106, and by using heated gas 152 to raise the housing temperature at the heated housing 106, the temperature of the first gas 150 can be maintained at or above its boiling point, without damaging the wafer 118, the plate 114, and / or other parts of the wafer processing system 100. Furthermore, by maintaining the temperature of the first gas 150 at or above its boiling point, the wafer processing system 100 can process the wafer 118 with little or no polymer formation and / or with few or no wafer defects within and / or on the wafer 118.

[0084] According to some embodiments, in Figure 5The diagram illustrates a method 500 for controlling the temperature of a first gas used to process a wafer (e.g., at least one of wafer 118 or other suitable wafers). The first gas is at least one of first gas 150 or other suitable gases. In step 502, the first gas at a first temperature is directed to a gas ejector connected to a wafer processing chamber containing the wafer. The gas ejector is at least one of gas ejector 110 or other suitable gas ejectors. The wafer processing chamber is at least one of wafer processing chamber 116 or other suitable wafer processing chambers. In some embodiments, the first gas is directed to the gas ejector in a first gas pipe (e.g., at least one of first gas pipe 108 or other suitable gas pipes). In step 504, a second gas is heated using a heating device to produce a heated gas. The second gas is at least one of second gas 304 or other suitable gases. The heating device is at least one of heating device 306 or other suitable heating devices. The heated gas is at least one of heated gas 152 or other suitable gases. At step 506, the heated gas is directed to a heating housing surrounding the gas ejector to increase the temperature of the first gas in the gas ejector from a first temperature to a second temperature. The heating housing is at least one of heating housing 106 or other suitable heating housings. In some embodiments, heated gas is directed to the heating housing in a second gas pipe (e.g., second gas pipe 102 or at least one of other suitable gas pipes). In step 508, after the temperature of the first gas is raised to a second temperature, the first gas is injected from a gas injector into the wafer processing chamber. This first gas is used for wafer processing. In some embodiments, a plasma (e.g., plasma 144 or at least one of other suitable plasmas) is generated from the first gas in the wafer processing chamber. This plasma is used for wafer processing.

[0085] One or more embodiments relate to a computer-readable medium including processor-executable instructions configured to implement one or more of the technologies presented herein. Figure 6The illustration depicts an exemplary computer-readable medium, wherein embodiment 600 includes a computer-readable medium 608 (e.g., a recordable optical disc (CD-R), a digitally versatile optical disc (DVD-R), a flash drive, a hard disk drive platter, etc.) in which computer-readable data 606 is encoded. This computer-readable data 606 sequentially includes a set of processor-executable computer instructions 604, which, when executed by a processor, are executable to implement one or more principles set forth herein. In some embodiments 600, when executed by a processor, the processor-executable computer instructions 604 are configured to implement method 602 (e.g., at least some of the foregoing methods). In some embodiments, when executed by a processor, the processor-executable computer instructions 604 are configured to execute a system (e.g., at least some of one or more of the foregoing systems). Those skilled in the art can operate according to the techniques presented herein to design many such computer-readable media.

[0086] In some embodiments, this disclosure provides a wafer processing system. This wafer processing system includes a wafer processing chamber defining a processing area in which wafers are processed. The wafer processing system includes a wafer support within the wafer processing chamber. The wafer support is configured to support a wafer in the processing area. The wafer processing system includes a gas ejection system. The gas ejection system includes a gas ejector coupled to the wafer processing chamber. The gas ejector is configured to eject a first gas into the processing area. This first gas is used for wafer processing. The gas ejection system includes a first gas conduit configured to direct the first gas at a first temperature to the gas ejector. The gas ejection system includes a heating housing surrounding the gas ejector. The gas ejection system includes a second gas conduit configured to direct heated gas to the heating housing to raise the housing temperature at the heating housing from the first housing temperature to a second housing temperature. Due to the second housing temperature at the heating housing, the temperature of the first gas in the gas ejector increases from the first temperature to the second temperature. In some embodiments, the wafer processing system includes a generator. A generator is coupled to a wafer processing chamber and configured to generate radio frequency power to establish plasma from a first gas in a processing area, wherein the plasma is used for wafer processing. In some embodiments, the processing includes etching. In some embodiments, the first gas comprises silicon tetrachloride (SiCl4) and a second temperature of at least 56 degrees Celsius. In some embodiments, the first gas is at a first pressure in a first gas tube; the first gas is at a second pressure in a gas ejector; the first gas is in a gaseous state at the second pressure and second temperature; and the first gas is in a non-gaseous state at the first pressure and first temperature. In some embodiments, the gas ejection system includes a heating device configured to heat the second gas to produce a heated gas. In some embodiments, the second gas comprises clean, dry air. In some embodiments, at least one of the heating housing or the second gas tube comprises a non-conductive material. In some embodiments, the non-conductive material comprises polytetrafluoroethylene (PTFE).

[0087] In some embodiments, this disclosure provides a gas jetting system. The gas jetting system includes a gas jetter coupled to a wafer processing chamber. The gas jetter is configured to jet a first gas into a processing area defined by the wafer processing chamber. The first gas is used to process a wafer in the processing area. The gas jetting system includes a first gas pipe configured to direct the first gas at a first temperature to the gas jetter. The gas jetting system includes a heating housing surrounding the gas jetter. The gas jetting system includes a second gas pipe configured to direct heated gas to the heating housing to raise the housing temperature at the heating housing from a first housing temperature to a second housing temperature. Due to the second housing temperature at the heating housing, the temperature of the first gas in the gas jetter increases from the first temperature to the second temperature. In some embodiments, the processing includes etching. The first gas comprises silicon tetrachloride (SiCl4); and the second temperature is at least 56 degrees Celsius. In some embodiments, the first gas is at a first pressure in the first gas pipe; the first gas is at a second pressure in the gas jetter; and the first gas is in a gaseous state at the second pressure and the second temperature. In some embodiments, the gas jetting system includes a heating device configured to heat the second gas to produce heated gas. In some embodiments, the second gas comprises clean, dry air. In some embodiments, at least one of the heating housing or the second gas tube comprises a non-conductive material. In some embodiments, the non-conductive material comprises polytetrafluoroethylene (PTFE).

[0088] In some embodiments, a method is provided to control the temperature of a first gas used for processing a wafer. The method includes directing a first gas at a first temperature to a gas ejector connected to a wafer processing chamber containing the wafer. The method includes heating a second gas using a heating device to generate a heated gas. The method includes directing the heated gas to a heating housing surrounding the gas ejector to increase the temperature of the first gas in the gas ejector from a first temperature to a second temperature. The method includes, after raising the temperature of the first gas to the second temperature, ejecting the first gas from the gas ejector into the wafer processing chamber, wherein the first gas is used for wafer processing. In some embodiments, the method includes generating plasma from the first gas in the wafer processing chamber, wherein the plasma is used for wafer processing. In some embodiments, directing the first gas includes: directing the first gas in a first gas tube to the gas ejector, wherein the first gas is at a first pressure in the first gas tube; the first gas is at a second pressure in the gas ejector; the first gas is in a gaseous state at the second pressure and the second temperature; and the first gas is in a non-gaseous state at the first pressure and the first temperature.

[0089] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes or benefits as the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made to them without departing from the spirit and scope of this disclosure.

[0090] Although the subject matter has been described in language specific to structural features or method steps, it should be understood that the subject matter of the appended claims is not limited to the specific features or steps described above, but rather, the specific features and steps described above are disclosed as exemplary forms for implementing at least some of the claims.

[0091] Various steps of the embodiments are provided herein. The order in which some or all of the steps are described should not be construed as implying that these steps must necessarily be in sequence. Alternative orders will be appreciated with the aid of this description. Furthermore, it will be understood that not all steps are required in each embodiment provided herein. Additionally, it will be understood that not all steps are necessary in some embodiments.

[0092] It should be understood that, for the purposes of simplicity and ease of understanding, the layers, features, elements, etc. depicted in this disclosure are shown in specific dimensions (e.g., structural dimensions or orientations) relative to each other, and in some embodiments, their actual dimensions are substantially different from those shown in this disclosure. Furthermore, there are various techniques available for forming the layers, regions, features, elements, etc. mentioned in this disclosure (e.g., etching techniques, planarization techniques, implantation techniques, doping techniques, spin coating techniques, sputtering techniques, growth techniques, or at least one of deposition techniques such as chemical vapor deposition (CVD)).

[0093] Furthermore, “exemplary” is used herein to mean as an example, instance, illustration, etc., and is not necessarily advantageous. As used in this disclosure, “or” is intended to mean an inclusive “or” rather than an exclusive “or.” Additionally, “a” and “an” as used in this disclosure and the appended claims are generally interpreted as meaning “one or more” unless otherwise stated or clearly indicated from the context in the singular form. Furthermore, at least one of A and B generally refers to A or B or both A and B. Moreover, to a certain extent, with regard to the use of “comprising,” “having,” “having,” “with,” or variations thereof, these terms refer to inclusion in a manner similar to the term “including.” Additionally, unless otherwise stated, “first,” “second,” etc., do not imply temporal, spatial, or sequential aspects. Rather, such terms are used only as identifiers, names, etc., for features, elements, items, etc. For example, a first element and a second element generally correspond to element A and element B, or two different elements, or two identical elements, or the same element.

[0094] Furthermore, although this disclosure has been illustrated and described with respect to one or more embodiments, equivalent changes and modifications will arise for those skilled in the art upon reading and understanding of this disclosure and the accompanying drawings. This disclosure includes all such modifications and changes and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the foregoing elements (e.g., elements, resources, etc.), unless otherwise stated, the terminology used to describe such elements is intended to correspond to any element that performs the specific function of the described element (e.g., functionally equivalent), even if it is not structurally equivalent to the disclosed structure. Additionally, although specific features of this disclosure may have been disclosed with respect to one embodiment of several embodiments, such features may be combined with one or more other features of other embodiments if they may be desirable and advantageous for any given or particular application.

Claims

1. A wafer processing system, comprising: A wafer processing system comprising: a wafer processing chamber defining a processing region in which a wafer is processed; a wafer support in the wafer processing chamber and configured to support the wafer in the processing region; a gas injection system comprising: a gas injector coupled to the wafer processing chamber and configured to inject a first gas into the processing region, wherein the first gas is used for processing of the wafer; a first gas tube configured to direct the first gas at a first temperature to the gas injector; a heating enclosure surrounding the gas injector to heat the first gas; a second gas tube configured to direct a heated gas to the heating enclosure to increase a chamber temperature at the heating enclosure from a first chamber temperature to a second chamber temperature, wherein a temperature of the first gas in the gas injector is raised from the first temperature to a second temperature due to the second chamber temperature at the heating enclosure; and a pressure sensor configured to measure at least one of a first pressure of the first gas in the first gas tube and a second pressure of the first gas in the gas injector, wherein a temperature of the heated gas is adjusted based on the at least one of the first pressure and the second pressure; and a transformer coupled plasma coil disposed generally above the wafer processing chamber, wherein a first portion of the transformer coupled plasma coil is disposed within the heating enclosure and a second portion of the transformer coupled plasma coil is disposed outside the heating enclosure.

2. The wafer processing system of claim 1, wherein, A generator coupled to the wafer processing chamber and configured to generate a radio frequency power to establish a plasma from the first gas in the processing region, wherein the plasma is used for the processing of the wafer.

3. The wafer processing system of claim 1, wherein: the processing comprises etching.

4. The wafer processing system of claim 1, wherein: the first gas comprises silicon tetrachloride; and the second temperature is at least 56 degrees Celsius.

5. The wafer processing system of claim 1, wherein: the first gas is in a gaseous state at the second pressure and the second temperature; and the first gas is in a non-gaseous state at the first pressure and the first temperature.

6. The wafer processing system of claim 1, wherein: the gas injection system comprises a heating device configured to heat a second gas to generate the heated gas.

7. The wafer processing system of claim 6, wherein: the second gas comprises clean dry air.

8. The wafer processing system of claim 1, wherein: at least one of the heating enclosure or the second gas tube comprises a non-conductive material.

9. The wafer processing system of claim 8, wherein: the non-conductive material comprises polytetrafluoroethylene. A gas injection system comprising:

10. A wafer processing system, comprising: a gas injector coupled to a wafer processing chamber and configured to inject a first gas into a processing region defined by the wafer processing chamber, wherein the first gas is used for processing of a wafer in the processing region; ​ ​ a first gas tube configured to direct the first gas at a first temperature to the gas injector; a heating enclosure surrounding the gas injector to heat the first gas; a second gas tube configured to direct heated gas to the heating enclosure to increase a housing temperature at the heating enclosure from a first housing temperature to a second housing temperature, wherein a temperature of the first gas in the gas injector is raised from the first temperature to a second temperature due to the second housing temperature at the heating enclosure; and a pressure sensor configured to measure at least one of a first pressure of the first gas in the first gas tube and a second pressure of the first gas in the gas injector, wherein a temperature of the heated gas is adjusted based on the at least one of the first pressure and the second pressure; and a transformer coupled plasma coil disposed over an entirety of the wafer processing chamber, wherein a first portion of the transformer coupled plasma coil is disposed within the heating enclosure and a second portion of the transformer coupled plasma coil is disposed outside of the heating enclosure.

11. The wafer processing system of claim 10, wherein: the processing includes etching.

12. The wafer processing system of claim 10, wherein: the first gas includes silicon tetrachloride (SiCl4); and the second temperature is at least 56 degrees Celsius.

13. The wafer processing system of claim 10, wherein: the first gas is gaseous at the second pressure and the second temperature.

14. The wafer processing system of claim 10, wherein, includes: a heating device configured to heat a second gas to generate the heated gas.

15. The wafer processing system of claim 14, wherein: the second gas includes clean dry air.

16. The wafer processing system of claim 10, wherein: at least one of the heating enclosure or the second gas tube includes a non-conductive material.

17. The wafer processing system of claim 16, wherein: the non-conductive material includes polytetrafluoroethylene.

18. A method for controlling a temperature of a first gas used for processing a wafer, comprising: includes: directing the first gas at a first temperature to a gas injector associated with a wafer processing chamber including the wafer, wherein directing the first gas includes directing the first gas in a first gas tube to the gas injector; measuring, using a pressure sensor, at least one of a first pressure of the first gas in the first gas tube and a second pressure of the first gas in the gas injector; heating, using a heating device, a second gas to generate a heated gas; adjusting a temperature of the heated gas based on the at least one of the first pressure and the second pressure; directing the heated gas to a heating enclosure surrounding the gas injector to raise a temperature of the first gas in the gas injector from the first temperature to a second temperature; after raising the temperature of the first gas to the second temperature, ejecting the first gas from the gas injector into the wafer processing chamber, wherein the first gas is used for processing of the wafer; and ​ establishing a plasma from the first gas in the wafer processing chamber, wherein establishing the plasma includes using a transformer coupled plasma coil disposed generally above the wafer processing chamber, and a first portion of the transformer coupled plasma coil is disposed within the heated enclosure and a second portion of the transformer coupled plasma coil is disposed outside the heated enclosure.

19. The method of claim 18, wherein, The plasma is used for the processing of the wafer, and the processing includes etching.

20. The method of claim 18, wherein: the first gas is in a gaseous state at the second pressure and the second temperature; and the first gas is in a non-gaseous state at the first pressure and the first temperature.

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