A planar decoupling structure for pattern correction

Abstract

The present invention discloses a planar decoupling structure for pattern correction, comprising a common metal floor, a dielectric substrate located on the top of the common metal floor, two groups of patch antennas and a planar decoupling structure, wherein the two groups of patch antennas are symmetrically arranged on the top of the dielectric substrate, and the planar decoupling structure is arranged on the top of the dielectric substrate and is located between the two groups of patch antennas. The planar decoupling structure for pattern correction proposed by the present invention improves the impedance matching and isolation of the antenna, and also improves the actual gain of the E plane, and corrects the H plane radiation pattern of the antenna concerned.

Description

Technical Field

[0001] The present invention relates to the technical field of antenna decoupling, and in particular to a planar decoupling structure for correcting a directional pattern. Background Art

[0002] Modern communication technology has higher and higher requirements for the miniaturization of antennas, which requires the spacing between array antenna units to be continuously reduced. Correspondingly, microstrip antennas have attracted widespread attention due to their advantages such as light weight, small size, and low manufacturing cost. Usually two or more microstrip antenna arrays are used to achieve high gain and good directivity, but the problem of antenna coupling must be considered when arranging them at close intervals. Taking a binary microstrip antenna array as an example, when the antennas are closely arranged, mutual coupling will lead to changes in antenna performance, such as reduced isolation, reduced gain, and tilted radiation pattern.

[0003] Currently, the commonly used decoupling technologies can be divided into two categories, namely planar decoupling technology and three-dimensional decoupling technology. Planar decoupling technology often uses etching some shapes on the ground or adding some resonant structures between the two antennas, while three-dimensional decoupling technology mainly inserts a wall between the two antennas or places some resonant structures above the antennas. However, no matter which decoupling method is used, when the unit spacing is small enough, such as 0.05λ0, these decoupling structures face the problem of pattern deviation. Summary of the invention

[0004] The purpose of the present invention is to provide a planar decoupling structure for directional pattern correction, aiming to solve the problem of directional pattern deviation in the prior art.

[0005] To achieve the above-mentioned purpose, the planar decoupling structure for directional pattern correction adopted in the present invention includes a common metal floor, a dielectric substrate located on the top of the common metal floor, two groups of patch antennas and a planar decoupling structure, the two groups of patch antennas are symmetrically arranged on the top of the dielectric substrate, and the planar decoupling structure is arranged on the top of the dielectric substrate and is located between the two groups of patch antennas.

[0006] Among them, the planar decoupling structure includes a first metal strip, two second metal strips and a third metal strip, the third metal strip is arranged between the two second metal strips, the ends of the two second metal strips and the end of the third metal strip are connected through the first metal strip, the center of the second metal strip is connected to the ground through a first metal through hole, and the end of another second metal strip away from the first metal strip is connected to the ground through a second metal through hole.

[0007] Each group of patch antennas includes a radiation patch, an impedance converter and a microstrip line. The radiation patch, the impedance converter and the microstrip line are all arranged on the top of the dielectric substrate. The radiation patch is connected to the microstrip line through the impedance converter.

[0008] The beneficial effects of the present invention are as follows: the impedance matching and isolation of the antenna are improved, the actual gain of the E-plane is improved, and the H-plane radiation pattern of the antenna concerned is corrected. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0010] Figure 1 It is a structural schematic diagram of a planar decoupling structure for directional pattern correction provided by the present invention.

[0011] Figure 2 It is a top view of a planar decoupling structure for directivity pattern correction provided by the present invention.

[0012] Figure 3 It is a schematic diagram of the variation of scattering parameters of the non-decoupling structure and the proposed structure with frequency provided by the present invention.

[0013] Figure 4 The far-field radiation pattern of the E-plane actual gain of the non-decoupling structure provided by the present invention and the proposed structure is within the range of -180° to 180°.

[0014] Figure 5 The present invention provides a non-decoupling structure and a far-field radiation pattern in which the actual gain of the H-plane of the proposed structure is within the range of -180° to 180°.

[0015] 1-common metal floor, 2-dielectric substrate, 3-patch antenna, 4-planar decoupling structure, 5-first metal through hole, 6-second metal through hole, 31-radiation patch, 32-impedance transformer, 33-microstrip line, 41-first metal strip, 42-second metal strip, 43-third metal strip. DETAILED DESCRIPTION

[0016] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0017] In the description of the invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the invention. In addition, in the description of the invention, "plurality" means two or more, unless otherwise clearly and specifically defined.

[0018] See also Figures 1 to 5 , including a common metal floor 1, a dielectric substrate 2 located on the top of the common metal floor, two groups of patch antennas 3 and a planar decoupling structure 4, the two groups of patch antennas 3 are symmetrically arranged on the top of the dielectric substrate 2, and the planar decoupling structure 4 is arranged on the top of the dielectric substrate 2 and located between the two patch antennas 3.

[0019] Furthermore, the planar decoupling structure 4 includes a first metal strip 41, two second metal strips 42 and a third metal strip 43, the third metal strip 43 is arranged between the two second metal strips 42, the ends of the two second metal strips 42 and the end of the third metal strip 43 are connected through the first metal strip 41, the center of the second metal strip 42 is connected to the ground through a first metal through-hole 5, and the end of another second metal strip 42 away from the first metal strip 41 is connected to the ground through a second metal through-hole 6.

[0020] Furthermore, each group of the patch antennas 3 includes a radiation patch 31, an impedance transformer 32 and a microstrip line 33, and the radiation patch 31, the impedance transformer 32 and the microstrip line 33 are all arranged on the top of the dielectric substrate 2, and the radiation patch 31 is connected to the microstrip line 33 through the impedance transformer 32.

[0021] Specifically, the impedance transformer 32 adopts a quarter-wavelength impedance transformer, the operating frequency of the binary microstrip antenna array is 5.80GHz, the microstrip line 33 is used for feeding, and the edge-to-edge distance of the two rectangular radiation patches 31 is 2.58mm (about λ0 / 20). The dielectric substrate 2 adopts F4BTM440 material with an effective dielectric constant of 4.4 and a loss tangent of 0.0033, and its length is 46mm, width is 31.7mm, and height is 1.6mm. The width of the first metal strip 41, the two second metal strips 42, and the third metal strip 43 of the planar decoupling structure 4 is 0.4mm, and the diameter of the first metal through hole 5 and the second metal through hole 6 is 0.3mm.

[0022] See also Figure 3 , where the solid line represents S 11 , the dotted line represents S 21 ; The unmarked ones are the scattering parameters of the structure without decoupling; the ones marked with solid circles are the scattering parameters of the proposed structure. It can be seen from the figure that when only the left patch is fed, compared with the structure without decoupling, the structure proposed by the present invention reduces the impedance bandwidth by 10MHz (5.74-5.87GHz), but it improves the impedance matching of the antenna and makes the decoupling effect of the antenna more significant, that is, within the entire impedance bandwidth, S 21 All below -18dB.

[0023] See also Figure 4 , where the solid line represents the E-plane radiation pattern without decoupling structure, and the solid circle represents the E-plane radiation pattern of the structure proposed by the present invention. It can be seen from the figure that the introduction of the decoupling structure does not affect the direction of the maximum actual gain of the E-plane. At the same time, the structure proposed by the present invention makes the maximum actual gain of the E-plane 5.45dB, which is 2.8dB higher than that of the structure without decoupling.

[0024] See also Figure 5 , where the solid line represents the H-plane radiation pattern without decoupling structure, and the solid circle represents the H-plane radiation pattern of the structure proposed by the present invention. When only the patch antenna 3 on the left is fed and the patch antenna on the right is connected to 50Ω impedance matching, it can be seen from the figure that if the decoupling structure is not used, due to the coupling effect of the close spacing, the beam of the H plane is tilted 28° toward the patch antenna 3 on the right, while the structure proposed by the present invention not only corrects the maximum radiation direction to 0°, but also reduces the actual gain of the H plane by only 0.17dB.

[0025] In summary, the planar decoupling structure 4 for pattern correction not only improves the impedance matching and isolation of the antenna, but also improves the actual gain of the E-plane and corrects the H-plane radiation pattern of the antenna concerned.

[0026] What is disclosed above is only a preferred embodiment of the present invention, and it certainly cannot be used to limit the scope of rights of the present invention. Ordinary technicians in this field can understand that all or part of the processes of the above embodiment and equivalent changes made according to the claims of the present invention still fall within the scope of the invention.

Claims

1. A planar decoupling structure for pattern correction, characterized in that: It comprises a common metal floor, a dielectric substrate located on the top of the common metal floor, two groups of patch antennas and a planar decoupling structure, wherein the two groups of patch antennas are symmetrically arranged on the top of the dielectric substrate, and the planar decoupling structure is arranged on the top of the dielectric substrate and is located between the two groups of patch antennas; The planar decoupling structure includes a first metal strip, two second metal strips and a third metal strip, wherein the third metal strip is arranged between the two second metal strips, the ends of the two second metal strips and the end of the third metal strip are connected through the first metal strip, the center of the second metal strip is connected to the ground through a first metal through hole, and the end of another second metal strip away from the first metal strip is connected to the ground through a second metal through hole.

2. The planar decoupling structure for pattern correction according to claim 1, characterized in that: Each group of patch antennas includes a radiation patch, an impedance converter and a microstrip line. The radiation patch, the impedance converter and the microstrip line are all arranged on the top of the dielectric substrate. The radiation patch is connected to the microstrip line through the impedance converter.

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