Method for measuring foreign matter of vacuum processing apparatus

Abstract

A foreign matter measuring method of a vacuum processing apparatus, the vacuum processing apparatus including a processing unit having a vacuum container with a processing chamber in which a wafer is processed, and an exhaust pump that exhausts the processing chamber; a vacuum transfer unit having a transfer chamber that transfers the wafer; and a connecting pipe having a passage that can transfer the wafer between the processing chamber and the transfer chamber, the foreign matter measuring method including a foreign matter collecting step of increasing the internal pressure of the transfer chamber compared to the internal pressure of the processing chamber, thereby causing a flow of gas in the passage from the transfer chamber to the processing chamber, transferring a wafer to a position that spans the transfer chamber, the passage, and the processing chamber, and holding for a given time; and a foreign matter measuring step of measuring foreign matter attached to the surface of the wafer.

Description

TECHNICAL FIELD

[0001] The present application relates to a foreign matter measuring method for a vacuum processing apparatus. BACKGROUND

[0002] A vacuum processing apparatus is known that is provided with a vacuum processing unit having a processing chamber that is depressurized inside a vacuum vessel, in which a substrate-shaped sample such as a semiconductor wafer is carried, and that performs processing using plasma formed by introducing a processing gas. In the vacuum processing apparatus, the processing chamber inside the vacuum vessel of the vacuum processing unit and another vacuum vessel, i.e., a vacuum transfer vessel, are connected. A sample that has been processed in the processing chamber is transferred through a vacuum transfer chamber that has been depressurized, to the vacuum transfer vessel and carried to a subsequent process, and a sample before processing is transferred from the vacuum transfer vessel through the vacuum transfer chamber to the processing chamber inside the vacuum vessel.

[0003] In such a vacuum processing apparatus, because a sample is transferred in the processing chamber and the vacuum transfer chamber and a passage therebetween, there is a problem that particles adhering to the inner surfaces thereof are detached from the surfaces and adhere to the surface of the sample during the transfer of the sample, thereby generating foreign matter. If foreign matter adheres to the surface of the sample, a semiconductor device manufactured from a portion including the adhering position will be a defective product, and there is concern that the yield of semiconductor devices in manufacturing will deteriorate.

[0004] Therefore, in order to suppress the generation of such foreign matter, it has been conventionally performed to collect particles that are detached from the inner surfaces of the vacuum processing apparatus and detect the number, material, composition, and the like of the characteristics thereof. As an example of such prior art, for example, the technology disclosed in Patent Literature 1 has been known conventionally.

[0005] In this prior art, the following operation is performed: a measurement wafer for adsorbing and collecting particles to the surface is transferred in a depressurized internal space of a vacuum processing apparatus that is exhausted by a dry pump, seated at a given position for a fixed period, and after the measurement wafer is recovered, the number of particles or the like that are adhered to the surface thereof is measured.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Patent Application Publication No. 2019-71410 SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION

[0010] However, in the above-described prior art, there is a problem as follows. That is, if only exhaust is performed by the dry pump at the time of standing, the dispersion of molecules becomes a state close to molecular flow, and the dispersion degree becomes high. Thus, in a case where the foreign matter generation source candidates are concentrated at 2 and 3, since the dispersed foreign matters fall and attach to the wafer at the same time, it is difficult to determine the foreign matter generation source from the place where the foreign matter falls.

[0011] If the foreign matter generation source cannot be determined, the maintenance work such as cleaning, replacement, and the like of a member used inside the vacuum processing apparatus and facing a space in which the wafer is carried, that is, a member in which a particle or a fragment of a substance that can attach to the wafer is likely to be generated, cannot be accurately performed, thereby causing attachment of a foreign matter in the processed wafer, and there is a concern that the yield of processing is impaired.

[0012] An object of the present application is to provide a foreign matter measurement method of a vacuum processing apparatus capable of highly accurately detecting a foreign matter generation source or generation thereof and suppressing generation of a foreign matter to improve the yield of processing.

[0013] - Means for Solving the Problem -

[0014] To solve the above-described problem, a representative foreign matter measurement method of a vacuum processing apparatus of the present application is a foreign matter measurement method of a vacuum processing apparatus including: a processing unit having a vacuum container having a processing chamber in which a wafer is processed inside, and a dry pump that exhausts the inside of the processing chamber; a vacuum carrying unit having a carrying chamber that carries the wafer; and a connection pipe having a passage through which the wafer can be carried between the processing chamber and the carrying chamber,

[0015] at a given timing, a foreign matter collection process and a foreign matter measurement process are performed,

[0016] in the foreign matter collection process, the inside pressure of the carrying chamber is increased compared to the inside pressure of the processing chamber, thereby causing a flow of gas in the passage from the carrying chamber to the processing chamber, carrying the wafer to a position across the carrying chamber, the passage, and the processing chamber, and holding for a given time,

[0017] in the foreign matter measurement process, a foreign matter attached to the surface of the wafer is measured,

[0018] thereby achieving the above-described foreign matter measurement method.

[0019] - Effects of the Invention -

[0020] According to the present application, it is possible to provide a foreign matter measurement method of a vacuum processing apparatus capable of highly accurately detecting a foreign matter generation source or generation thereof and suppressing generation of a foreign matter to improve the yield of processing.

[0021] The issues, structures, and effects other than those mentioned above will become clearer through the following description of the implementation methods. Attached Figure Description

[0022] Figure 1 This is a schematic top view illustrating the general structure of the semiconductor manufacturing apparatus according to an embodiment of the present invention.

[0023] Figure 2 It is a schematic representation Figure 1 A schematic longitudinal sectional view of the structure of the substrate processing unit of the semiconductor manufacturing apparatus according to the embodiment shown.

[0024] Figure 3 It is an illustrative representation of the target Figure 1 A cross-sectional view of the state of foreign matter collection during maintenance or repair of a semiconductor manufacturing apparatus.

[0025] Figure 4 It is a schematic representation Figure 1 The illustrated embodiment is a longitudinal cross-sectional view of the gas flow around the wafer during foreign matter measurement performed in a semiconductor manufacturing apparatus.

[0026] Figure 5 It is a schematic representation Figure 4 The image shows a longitudinal sectional view of the state of particles, etc., attached during the foreign matter measurement.

[0027] Figure 6 It means Figure 1 The flowchart illustrates the steps for collecting and measuring foreign matter on a wafer during the maintenance operation of the vacuum processing apparatus involved in the illustrated embodiment.

[0028] Figure 7 It is a schematic representation Figure 6 This is a schematic top view of a foreign matter detector used to measure foreign matter on the surface of the wafer W in the foreign matter measurement of the embodiment shown. Detailed Implementation

[0029] Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, structures given the same reference numerals are substantially identical, and repeated descriptions are omitted.

[0030] [Implementation Method 1]

[0031] The following uses Figure 1 and even Figure 7 The embodiments of the present invention will be described below.

[0032] First, refer to Figure 1 The overall structure of the semiconductor manufacturing apparatus 100 according to the embodiments of the present invention will be explained.Figure 1 is a schematic plan view that schematically shows the overall structure of a semiconductor manufacturing apparatus according to an embodiment of the present application.

[0033] Here, the semiconductor wafer that is a sample to be processed includes a wafer that is processed for manufacturing a semiconductor device, and a wafer that is used for collecting foreign matter inside a substrate processing unit. This semiconductor wafer is referred to as a wafer W.

[0034] Figure 1 The semiconductor manufacturing apparatus 100 shown is an example of a vacuum processing apparatus, and is a so-called multi-chamber type apparatus that has, inside a vacuum container, a plurality of substrate processing units each having one processing chamber in which a wafer W that is a substrate-shaped sample to be processed is arranged, and a vacuum container that is connected to these substrate processing units and has one vacuum transfer chamber. The semiconductor manufacturing apparatus 100 can also be a single-chamber type.

[0035] In Figure 1 , the first vacuum transfer unit 112, the second vacuum transfer unit 122, and the substrate processing units 128-1 to 128-4 are one unit that constitutes the semiconductor manufacturing apparatus 100 each having a vacuum container. Figure 1 The four substrate processing units 128-1 to 128-4 shown in

[0036] For convenience, in Figure 1 , the lower side is referred to as the front side, and the upper side is referred to as the rear side. Figure 1 The semiconductor manufacturing apparatus 100 has, on the front side, an atmospheric side block 101, and on the rear side, a vacuum side block 102. The atmospheric side block 101 is a block that transfers and stores the wafer W in a transfer chamber inside which the atmosphere has been changed to atmospheric pressure, and performs positioning and the like. On the other hand, the vacuum side block 102 is connected to the rear side of the atmospheric side block 101, and is a block that transfers the wafer W in a chamber inside which the pressure has been reduced to a given vacuum degree, and performs processing after being arranged inside a processing chamber of an arbitrary substrate processing unit 128 that has been decided in advance. Further, between the atmospheric side block 101 and the vacuum side block 102, there is arranged a region that connects these blocks and adjusts the pressure between atmospheric pressure and vacuum pressure with the wafer W inside.

[0037] The atmospheric side block 101 has, as a housing, an atmospheric transfer container 103 that is substantially rectangular parallelepiped-shaped, and has, inside, an atmospheric transfer robot 105 for transferring the wafer W. On the front side of the atmospheric transfer container 103, there are arranged a plurality of (three in this case) cassette stages 104 that place a cassette in which the wafer W is stored on the upper surface thereof.

[0038] A load port, not shown, is provided above the upper surfaces of the cassette tables 104 provided on the front surface of the atmospheric transfer container 103. The load port holds a wafer W on the tip end of an atmospheric transfer robot 105, and can open and close an opening through which exchange between the inside of the chamber in the atmospheric transfer container 103 and the inside of the cassette is performed. A FOUP (Front Opening Unified Pod) in which, for example, 25 wafers W are stored is placed on each of the upper surfaces of the cassette tables 104.

[0039] The atmospheric transfer robot 105 provided in the atmospheric transfer container 103 takes a wafer W from any of the FOUPs into the atmospheric transfer chamber inside the atmospheric transfer container 103 through the opened opening in the load port, and into either of the upper and lower lock chambers 107. Alternatively, the atmospheric transfer robot 105 takes a wafer W out of any of the lock chambers 107, and into the original FOUP in the original position.

[0040] The vacuum-side block 102 is provided with a first vacuum transfer unit 112 and a second vacuum transfer unit 122 each of which has a vacuum container whose shape in plan view is substantially rectangular or square, and one or more lock chambers 107. The lock chamber 107 is another vacuum container provided between the first vacuum transfer unit 112 and the back surface of the atmospheric transfer container 103 of the atmospheric-side block 101, and has a function of increasing or decreasing the pressure in the inside thereof between a value substantially close to atmospheric pressure and a value reduced to a given vacuum degree while holding a wafer W in the inside.

[0041] The lock chamber 107 has a container in which a plurality of wafers W can be stored with a gap in the vertical direction. Further, at the front and rear end portions of the lock chamber 107, at positions connected to the atmospheric transfer container 103 and the first vacuum transfer unit 112, a passage through which a wafer passes and is transferred, i.e., a gate, is provided.

[0042] The gate on the atmospheric side (atmospheric transfer container 103 side) is opened and closed by a gate valve 106 and can be hermetically sealed, and the gate on the vacuum side (first vacuum transfer unit 112 side) is opened and closed by a gate valve 108 and can be hermetically sealed. By closing the gate valves 106 and 108, the atmospheric-side block and the vacuum-side block are hermetically isolated from each other.

[0043] In Figure 1In the top view, only a single locking chamber 107 is shown, but in this embodiment, multiple locking chambers of approximately the same or comparable size are arranged overlapping in the vertical direction. Furthermore, unless otherwise specified in the following description, the multiple locking chambers 107 will also be described as a single locking chamber 107. Thus, the vacuum side block 102 is a block that connects to a container capable of maintaining a high vacuum pressure and serves as a space maintained in a state where the entire interior has been depressurized.

[0044] The first vacuum transport unit 112 and the second vacuum transport unit 122 are units comprising vacuum containers, i.e., vacuum transport containers (here referring to the frames that enclose the first vacuum transport unit 112 and the second vacuum transport unit 122 respectively, and these interiors are referred to as vacuum transport chambers), each having a generally rectangular top view. These units are two units with substantially similar structural differences. Inside these first and second vacuum transport units, vacuum transport robots 113 and 123 are configured to transport the wafer W. Vacuum transport robots 113 and 123 are also collectively referred to as vacuum transport robots.

[0045] These vacuum handling robots 113 and 123 are equipped with arms configured to rotate vertically about the center of a handling chamber located inside a vacuum container. Multiple beam-shaped wrists have axes at both ends in the vertical direction and are connected by joints. The wrists rotate around the joints of the arms to form rotatable and extendable robotic arms. Each wrist has a U-shaped extension 113' or 123' at one end of its front end.

[0046] Vacuum handling robots 113 and 123, while holding the wafer W on the extensions 113' and 123', are positioned directly opposite a target such as the substrate processing units 128-1 to 128-4 or the locking chamber 107. The robots rotate their arms around a central portion and extend them for positioning, thereby moving the wafer W into the target. Furthermore, vacuum handling robots 113 and 123 are also capable of removing the wafer W from the target by retracting their arms and moving it into the handling chamber.

[0047] The vacuum transport container of the first vacuum transport unit 112 in this embodiment is located on the left and right sides (in the...) Figure 1 The sidewalls of the wafer (left and right) are connected to the substrate processing units 128-1 and 128-2 arranged on the outside of the wafer via connecting pipes 114 and 115, respectively. The connecting pipes 114 and 115 have internal passages for the vacuum handling robot 113 to carry and transport the wafer W.

[0048] Further, the inner side end portions of the connection pipes 114, 115 communicate with the vacuum transfer chambers via openings, i.e., gates, formed in the left and right side walls of the vacuum transfer vessel of the first vacuum transfer unit 112. The openings of the gates are opened or closed airtightly by gate valves 110, 111 disposed inside the vacuum transfer vessel and moving in the up and down direction.

[0049] Further, the front and rear (in the Figure 1 embodiment, up and down) side wall surfaces of the vacuum transfer vessel of the first vacuum transfer unit 112 are connected to the atmospheric transfer vessel 103 and the vacuum transfer vessel of the second vacuum transfer unit 122 disposed outside thereof via the lock chamber 107 and the buffer chamber 118, respectively. Like the lock chamber 107, the buffer chamber 118 also has a storage space inside for the vacuum transfer robot 113 to carry the wafer W and transfer it into or out of the storage.

[0050] The front and rear end portions of the buffer chamber 118 communicate with the vacuum transfer chambers via openings, i.e., gates, formed in the side walls of the back surface of the vacuum transfer vessel of the first vacuum transfer unit 112 and the front surface of the vacuum transfer vessel of the second vacuum transfer unit 122. The openings of the gates are opened or closed airtightly by gate valves 109, 119 disposed inside the respective vacuum transfer vessels and moving in the up and down direction.

[0051] Likewise, the left and right (in the Figure 1 embodiment, left and right) side wall surfaces of the vacuum transfer vessel of the second vacuum transfer unit 122 are connected to the substrate processing units 128-3, 128-4 disposed outside thereof via the connection pipes 124, 125, respectively. The connection pipes 124, 125 have passages inside for the vacuum transfer robot 123 to transfer the wafer W.

[0052] Further, the inner side end portions of the connection pipes 124, 125 communicate with the vacuum transfer chambers via openings, i.e., gates, formed in the left and right side walls of the vacuum transfer vessel of the second vacuum transfer unit 122. The openings of the gates are opened or closed airtightly by gate valves 120, 121 disposed inside the vacuum transfer vessel and moving in the up and down direction.

[0053] Further, the front side (in the Figure 2 embodiment, lower) side wall surface of the vacuum transfer vessel of the second vacuum transfer unit 122 is connected to the vacuum transfer vessel of the first vacuum transfer unit 112 via the buffer chamber 118.

[0054] The buffer chamber 118 of the present embodiment is one container in a substantially rectangular or square shape in a plan view, but can also be a plurality of containers arranged in a stacked manner in the vertical direction, and the vacuum transfer robots 113, 123 transfer the wafers W into and out of each container. Further, the gate valves 109, 110, 111, 119, 120, 121 of the present embodiment are opened during operation in which the wafers W are processed by each substrate processing unit 128-1 to 128-4 connected via the gate involved in opening and closing of each connection pipe 114, 115, 124, 125, and the passages inside the corresponding connection pipes 114, 115, 124, 125 become depressurized to the same pressure as in the vacuum transfer chamber.

[0055] On the other hand, the passages inside the connection pipes 114, 115, 124, 125 communicate with the processing chambers inside each vacuum container via the gate opening for transferring the wafers W, i.e., the gate, formed in the side wall of each vacuum container of the substrate processing units 128-1 to 128-4. Further, at the end portions of the connection pipes 114, 115, 124, 125 near the substrate processing units 128-1, respectively, there are provided processing valves 116, 117, 126, 127 that move up and down to open or hermetically close the gates of each substrate processing unit 128.

[0056] Thus, in the present example, the wafers W are transferred into or out of each substrate processing unit 128 in a state in which the plurality of gate valves and processing valves open each gate between the first and second vacuum transfer units 112, 122. Further, the wafers W are transferred into or out of the first vacuum transfer unit 112, the second vacuum transfer unit 122, and the lock chamber 107 or the buffer chamber 118 in a state in which the gate valves 108, 109, 119 are opened.

[0057] Further, the buffer chamber 118 and the lock chamber 107 are arranged in a position in which the two chambers are stacked in the vertical direction. In more detail, the buffer chamber 118 has, inside the vacuum container that constitutes the space for housing the wafers, a detachable partition (not shown) that divides the inside into two chambers vertically, and the movement of gas and particles between the two chambers is reduced.

[0058] That is, the buffer chamber 118 has a housing portion that is a vacuum container capable of being depressurized to a degree of vacuum equivalent to that of other vacuum transfer chambers or vacuum processing chambers, and the housing portion horizontally holds the wafers W in each chamber divided by a partition that can be interposed between the wafers and can be detached. Thus, when the wafers W are transferred between the first and second vacuum transfer units, the buffer chamber 118 functions as a relay chamber that temporarily transfers in and out the wafers W.

[0059] That is, the buffer chamber 118 is a work table that accommodates wafers W that are being processed or have been processed in any of the processing chambers of the plurality of substrate processing units 128. Therefore, in a state in which a wafer W that is scheduled to be processed in any of the processing chambers is accommodated in the accommodation space inside the buffer chamber 118 in a standby state, a processed wafer W that has been processed in another processing chamber is carried into the accommodation space in a state in which the processing is completed, or a wafer W that has been processed in the substrate processing units 128-3, 128-4 is accommodated in the accommodation space in a state in which the wafer W is carried to any of the lock chambers 107, it is possible to cause a situation in which the wafers are carried into the substrate processing units 128-3, 128-4. By providing an accommodation space that is divided into an upper portion and a lower portion as described above, even if a wafer W before processing and a wafer W after processing are present in the buffer chamber 118 at the same time, it is possible to suppress adverse effects on the wafer W before processing from gases or products remaining around the wafer W after processing.

[0060] In addition, any of the gate valves 109, 110, 111, 119, 120, 121 of the present embodiment has the following performance: in a state in which each gate is closed, the space on one side is depressurized to approximately atmospheric pressure and the space on the other side is depressurized to a pressure equivalent to the vacuum degree in operation, and airtight sealing can be maintained. On the other hand, the process valves 116, 117, 126, 127 can close and airtightly seal the gates that communicate between the processed wafer W in the connection pipes 114, 115, 124, 125 in which the process valves are disposed inside and the processing chambers of each substrate processing unit 128 that have been depressurized to a vacuum degree that is the same as or higher than the front end inside the vacuum container.

[0061] As described above, each substrate processing unit 128 and the first vacuum transfer unit 112 or the second vacuum transfer unit 122 that links them can ensure communication via the connection pipes 114, 115, 124, 125 and the gates by opening the corresponding gate valves 110, 111, 120, 121 and process valves 116, 117, 126, 127, and can achieve transfer of the wafers W with respect to each substrate processing unit 128 based on the vacuum transfer robot 113, 123. Furthermore, the connection pipes 114, 115, 124, 125 and the gates are airtightly closed by closing the process valves.

[0062] In the processing chambers inside the vacuum containers of each substrate processing unit 128, by the operation of an exhaust device including a vacuum pump such as a turbo molecular pump connected to the vacuum container and a valve that adjusts the flow rate and speed of exhaust, it is possible to maintain a state in which the inside is depressurized to a given vacuum degree, and to perform processing such as etching using plasma formed in the processing chamber, or deposition processing, cleaning of the inside of the processing chamber, and the like, with respect to the wafers W disposed inside.

[0063] Next, the structure of an arbitrary substrate processing unit 128 of the semiconductor manufacturing apparatus 100 according to the present embodiment will be described with reference to FIG. 2. Figure 2 The description will be given. Figure 1 is a schematic longitudinal sectional view showing the structure of a substrate processing unit of the semiconductor manufacturing apparatus according to the embodiment shown in FIG. 1. Figure 1 is a schematic longitudinal sectional view showing the structure of a substrate processing unit of the semiconductor manufacturing apparatus according to the embodiment shown in FIG. 1.

[0064] The processing unit 200 shown in this figure is provided with a vacuum container 211, an electric field supply portion 212 provided above the vacuum container 211 and supplying an electric field or a magnetic field for forming plasma inside the vacuum container 211, and an exhaust portion 213 connected to the bottom surface of the lower portion of the vacuum container 211 and provided with a vacuum pump for exhausting and depressurizing the inside of the vacuum container. Figure 2 The substrate processing units 128-1 to 128-4 shown in this figure are representative of, for example, the substrate processing unit 128-1 and the first vacuum transfer unit 112 connected thereto by the connection pipe 114. The substrate processing unit 128-1 is provided with a vacuum container 211, an electric field supply portion 212 provided above the vacuum container 211 and supplying an electric field or a magnetic field for forming plasma inside the vacuum container 211, and an exhaust portion 213 connected to the bottom surface of the lower portion of the vacuum container 211 and provided with a vacuum pump for exhausting and depressurizing the inside of the vacuum container.

[0065] The electric field supply portion provided on the outer periphery side or the lid portion above the upper portion of the cylindrical side wall of the vacuum container 211 having a cylindrical shape is provided with an electric field generating power supply 207 generating an electric field of a specific frequency in the microwave band for forming an electric field for plasma in the processing chamber, a waveguide 206 for propagating the generated electric field inside and introducing it into the processing chamber 201 inside the vacuum container 211 below, and a solenoid coil 208 forming a magnetic field around the vacuum container 211.

[0066] In the substrate processing unit 128-1 according to the present embodiment, molecules or atoms of a processing gas introduced into the processing chamber 201 are excited and ionized or dissociated by ECR (Electron Cyclotron Resonance) generated by the electric field and the magnetic field of the supplied microwaves, and plasma is formed, and a film on the upper surface of the wafer W arranged in the processing chamber 201 is etched using the plasma.

[0067] A dielectric window 204 made of a dielectric such as quartz, which constitutes the lid portion of the vacuum container 211, is arranged on the upper portion of the vacuum container 211, and covers the inside space, i.e., the upper portion of the processing chamber 201 in which the wafer W is arranged and the plasma is formed. The dielectric window 204 is installed by sandwiching a sealing member such as an O-ring between the upper end portion of the cylindrical side wall of the upper portion of the vacuum container 211, and the inside of the processing chamber 201 and the outside of the environment at atmospheric pressure are hermetically sealed.

[0068] Above the processing chamber 201 below the dielectric window 204, a dielectric (for example, quartz) shower plate 205 having a plurality of through-holes through which a gas for processing is introduced inside and having a circular plate shape is arranged. The shower plate 205 is arranged inside the processing chamber 201 which is reduced in pressure and constitutes a ceiling surface of the processing chamber 201.

[0069] In the present embodiment, above the dielectric window 204 arranged in the upper portion of the cylindrical vacuum vessel 211, a cylindrical space having a diameter approximately the same size as the dielectric window 204 and a waveguide 206 connected to the upper portion of the space are arranged.

[0070] The waveguide 206 mainly includes two portions, one of which is a circular waveguide portion connected to the cylindrical space above the processing chamber 201 and extending vertically upward in the axial direction thereof, and the other of which is a square waveguide portion connected to the upper end portion of the circular waveguide portion and extending in the horizontal direction in the axial direction thereof, the cross section of which is rectangular, square, or a shape approximately similar to these.

[0071] At the other end portion of the square waveguide portion, an electric field generating power source 207 such as a magnetron which generates and forms an electric field of a microwave is arranged, and the electric field oscillated and formed by the electric field generating power source 207 propagates in the waveguide 206 and is introduced into a cylindrical space for resonance connected below the lower end portion of the circular waveguide portion, and after being set to a given mode of an electric field inside, is supplied to the processing chamber 201 through the dielectric window 204.

[0072] Further, above the vacuum vessel 211, a solenoid coil 208 is arranged which is wound in multiple stages in the vertical direction while surrounding the periphery of the waveguide 206 and the periphery of the outer peripheral wall of the upper portion of the vacuum vessel 211, and is capable of generating a magnetic field of a strength which matches the frequency of the electric field of the microwave. The magnetic field formed by direct current supplied to the solenoid coil 208 generates ECR with the electric field of the microwave introduced into the processing chamber 201, and excites the particles of the processing gas introduced into the processing chamber, whereby plasma is formed in the processing chamber 201.

[0073] In the lower portion of the inside of the processing chamber 201, a sample stage 209 whose upper surface carries a wafer W is arranged. The sample stage 209 has a cylindrical shape, and the circular upper surface thereof is covered with a film, that is, a dielectric film, formed by sputtering a material including a dielectric such as ceramic, and the wafer W which is the object of processing is carried on the upper surface of the dielectric film.

[0074] The electrostatic force formed by the direct current supplied to the electrode of the conductive body disposed inside the sample stage 209 or inside the dielectric film supplies a gas having heat transfer properties such as He to the gap between the back surface of the wafer W and the upper surface of the dielectric film in a state where the wafer W is adsorbed and held by the dielectric film, to promote heat conduction between the sample stage 209 and the wafer W. In this state, processing of the wafer W (for example, plasma etching processing) is performed.

[0075] In addition, inside the vacuum container 211 of the present embodiment, a plurality of members are disposed and face the plasma. For example, above the sample stage 209, a flange 210 is disposed annularly surrounding the upper surface of the sample stage 209. The flange 210 is composed of a member of a conductive body, has a ring shape like a cross section of an L letter rotated around a vertical axis, and is disposed covering the inner wall surface of the processing chamber 201 that constitutes the ceiling surface of the processing chamber 201 above the sample stage 209 with a gap. Further, the surface of the base material of the flange 210 covered with aluminum oxide is electrically connected to the ground electrode.

[0076] The flange 210 is disposed as a part of the vacuum container 211 between the upper container and the lower container of the vacuum container 211, so that the portion of the inner periphery side including the annular inner peripheral portion faces the inside of the processing chamber 201. The upper portion of the vacuum container 211 is the upper portion of the processing chamber 201 having a cylindrical portion surrounded inside and a region where the plasma is formed on the inside. Further, the lower portion of the vacuum container 211 is a container that surrounds the lower portion of the processing chamber 201 with the flange 210, that is, a member that surrounds the periphery of the sample stage 209 with a gap.

[0077] In addition, the sample stage 209 is held at an intermediate height position between the top surface and the bottom surface of the vacuum container 211 in the vertical direction of the processing chamber 201 with a gap from these upper and lower surfaces. That is, a plasma is formed in the space of the processing chamber 201 between the upper surface of the sample stage 209 and the top surface, and the spaces between the outer peripheral side wall of the sample stage 209 and the inner side wall surface of the processing chamber 201 of the lower portion of the vacuum container 211, and between the lower surface of the sample stage 209 and the bottom surface of the vacuum container 211 become downstream flow paths in which the above-mentioned plasma, a gas supplied to the inside of the processing chamber 201, or particles of a product generated in processing of the wafer W flow toward the bottom portion of the vacuum container 211 and a position disposed directly below the lower surface of the sample stage 209 and having a circular exhaust port 214, and are exhausted to the outside of the processing chamber 201 from the exhaust port 214 via an exhaust portion.

[0078] The exhaust section of this embodiment includes: multiple vacuum pumps respectively disposed on the upstream and downstream sides according to the exhaust flow direction; and multiple exhaust pipes connecting and communicating with the exhaust port 214 and these vacuum pumps. In this embodiment, the exhaust pipe installed at the bottom of the vacuum container 211 is connected to the inlet of the turbomolecular pump 202 via an exhaust regulating valve (not shown) that adjusts the amount and speed of exhaust by increasing or decreasing the flow path cross-sectional area of ​​the internal exhaust flow.

[0079] Furthermore, the outlet of the turbomolecular pump 202 is connected to the inlet of the dry pump 203, which serves as a roughing pump, via another exhaust pipe. Gases discharged from the dry pump 203 are discharged through an exhaust path provided by the building, such as the cleanroom where the semiconductor manufacturing apparatus 100 is installed. The turbomolecular pump 202 and the dry pump 203 constitute an exhaust pump.

[0080] Furthermore, the first vacuum transport unit 112 is connected to the substrate processing unit 128-1 via the connecting pipe 114. The first vacuum transport unit 112 has a gate valve 109 within its internal vacuum transport chamber 212 that opens and closes a gate connecting the first vacuum transport unit 112 and the vacuum transport chamber 212 to the connecting pipe 114. The first vacuum transport unit 112 is connected to a dry pump 213 via an exhaust port (not shown) communicating with the vacuum transport chamber 212. Through the operation of the dry pump 213, the vacuum transport chamber 212 is depressurized by exhausting air to a vacuum level slightly higher than that inside the processing chamber 201.

[0081] During the processing of the wafer W in the processing chamber 201, the processing valve 116 disposed in the connecting pipe 114 closes the gate connecting the processing chamber 201, which is disposed on the lower side wall of the vacuum container 211, and the inside of the connecting pipe 114 to achieve an airtight seal between the two, thereby maintaining the aforementioned pressure difference.

[0082] On the other hand, when the wafer W is being transported between the processing chamber 201 and the vacuum transport chamber 212, the processing valve 116 is opened, connecting the two. For example... Figure 3 As shown, a drive unit 116d is provided below the connecting pipe 114 to drive the processing valve 116 and move it in the vertical direction. The drive unit 116d abuts against the outer periphery of the gate formed on the side wall of the vacuum container 211 by driving the processing valve 116, thereby sealing the space communicating with the processing chamber 201 and the passage inside the connecting pipe 114 in an airtight manner. A unit including the drive unit 116d and the connecting pipe 114 serves as a connecting part, thereby connecting to the substrate processing unit 128-1 or the first vacuum transport unit 112.

[0083] Further, a drive section 109d that drives the gate valve 109 to move in the vertical direction is provided at a position below the vacuum container of the first vacuum transfer unit 112, i.e., a position close to the connection pipe 114. The drive section 109d abuts against a position around the gate of the inner side wall of the vacuum container by driving the gate valve 109, thereby enabling the inside and outside of the gate to be hermetically sealed. The drive section 109d also constitutes the first vacuum transfer unit 112.

[0084] Here, when performing an operation of maintaining or repairing the inside of the processing chamber 201, the flange 210 is disassembled together with the upper portion of the processing chamber 201 and the solenoid coil 208, and is exposed to the atmosphere. Alternatively, in the case where the surface coating film is deteriorated or cracked, the flange 210 is removed and replaced. After the operation on the member inside the processing chamber 201 is completed, the upper portion of the processing chamber 201 is installed to the lower portion with the flange 210 interposed therebetween, thereby constituting the vacuum container 211.

[0085] On the other hand, the member disposed inside the processing chamber 201 is subjected to cleaning and washing to clean the surface, but there is a concern that particles separated from the surface, or pieces of the member, can adhere to the surface of the wafer W to cause foreign matter due to exposure to the high vacuum degree inside the processing chamber 201, heat or products generated during processing of the wafer W.

[0086] In the present embodiment, in order to suppress generation of such foreign matter, the number of particles adhering and the position of the adhering are used to predict generation of foreign matter on the wafer W transfer path to any one of the substrate processing units 128-1 to 128-4. Thus, in the case where generation of foreign matter is predicted, processing of the wafer W is interrupted in any one of the substrate processing units 128-1 to 128-4 corresponding to the path, and maintenance, repair, or the like, such as cleaning, is performed from the position of the adhering including a position assumed to be a source of generation of foreign matter.

[0087] That is, if unnecessary matter adheres to the wafer W from the surface of the processing chamber 201 to cause foreign matter, there is a concern that the configuration of the circuit of the semiconductor device on the surface of the wafer W is not formed as desired. Therefore, if foreign matter is generated, the performance of the semiconductor device is impaired, a so-called defective product is generated, and the yield of the semiconductor device is reduced. It is important to suppress generation of foreign matter to suppress such reduction in yield, and to determine the position of the source of generation inside the semiconductor manufacturing apparatus, to clean the position or replace the member, thereby effectively removing particles or pieces that are the cause of foreign matter from the inside of the apparatus.

[0088] On the other hand, in a position assumed to be a generation source of foreign matter, a member exists in a relatively narrow area, a so-called concentrated area, and it is possible to determine a position of cleaning or replacement in a short time, which is closely related to a reduction in time other than operation time for processing a semiconductor device and mass production by a device, and is important because it is possible to improve the operation rate of a semiconductor manufacturing device. Thus, in the present embodiment, in a case where there are a plurality of positions assumed to be generation sources of foreign matter, an operation of efficiently and accurately detecting a position of a generation source is performed in maintenance or inspection. The use Figure 7 or the like will be described. Figure 3 The measurement method of foreign matter performed for the operation will be described.

[0089] Referring to Figure 3 , a method of maintenance or inspection of the semiconductor manufacturing device 100 that collects foreign matter will be described. Figure 1 is a cross-sectional view schematically showing a state of collection of foreign matter at the time of maintenance or inspection performed on the semiconductor manufacturing device shown in Figure 3 . In particular, in Figure 2 , a cross section of a height position in the up-and-down direction of the A-A line shown in Figure 3 is shown.

[0090] Here, after the operation of the last maintenance or inspection performed on the substrate processing unit 128-1 ends, the number of wafers W processed in the processing chamber 201 of the processing unit reaches a given value, or the time during which plasma is formed in the processing chamber 201 reaches a given cumulative value, and the timing of the next maintenance or inspection is set.

[0091] When the control device (not shown) that can electrically communicate with the semiconductor manufacturing device 100 detects that the timing of maintenance or inspection has come, the control device switches the operation of the substrate processing unit 128-1 from the operation of manufacturing for processing a wafer W for mass production of a semiconductor device to the operation of maintenance or inspection of the substrate processing unit 128-1 in the semiconductor manufacturing device 100.

[0092] Hereinafter, the operation of performing maintenance or inspection will be referred to as a maintenance operation. In addition, before the maintenance operation of the substrate processing unit 128-1 starts, all wafers W on a path from the processing chamber 201 to the original FOUP on the cassette table 104 until the wafer W is taken out are returned to the lock chamber 107 on a carry-out (return) path from the processing chamber 201 to the lock chamber 107 according to an instruction signal from the control device after processing by the processing unit.

[0093] If the maintenance operation is started, the control device of the semiconductor manufacturing apparatus 100 takes out a test wafer W from a given FOUP on the cassette table 104 and carries it into the lock chamber 107. Further, from the lock chamber 107 which is depressurized and the gate valve 108 is opened, the test wafer W is carried on the extension 113' of the arm tip of the vacuum transfer robot 113 controlled by the control device and is taken out. As shown in FIG. 8, the taken-out wafer W is connected to the side wall of the first vacuum transfer unit 112 and the side wall of the vacuum vessel 211 of the substrate processing unit 128-1 and is inserted in the inside of the connection pipe 114 which connects between the vacuum transfer chamber 212 and the processing chamber 201. Figure 3

[0094] Further, on the axis in the direction in which the arm of the vacuum transfer robot 113 of the wafer W is extended or retracted (the left-right direction on the drawing), which is parallel to the axis passing through the center of the vacuum transfer chamber 212 and the straight line between the rotation axis of the vacuum transfer robot 113 in the up-down direction and the sample table 209 in this embodiment, the two outer peripheral edges of the wafer W in the axis direction, i.e., the edge closest to the center of the upper surface of the sample table 209 of the processing chamber 201 and the edge closest to the above-mentioned rotation axis of the vacuum transfer robot 113 of the vacuum transfer chamber 212 are respectively located in the inside of the processing chamber 201 and the vacuum transfer chamber 212, and the projection plane of the wafer W is overlapped with the inside of each of the vacuum transfer chamber 212, the inside of the connection pipe 144 and the processing chamber 201 as shown in the plan view of FIG. 8. Figure 4

[0095] Here, in the region in which the generation sources of the plurality of foreign matters of the wafer W exist within the range of a distance shorter than the diameter of the wafer W, the wafer W is arranged at a fixed time at a specific position, and a foreign matter collection process of causing the falling foreign matter at the position to adhere to the wafer is performed. In this process, according to an instruction signal from the control device, the vacuum transfer robot 113 moves the extension 113' carrying the wafer W to the above-mentioned position in a state in which the gate opening the connection between the gate valve 109 and the processing treatment valve 116 and the inside of the connection pipe 114.

[0096] In this embodiment, it is assumed that the members which are the generation sources of the foreign matters are the three members of the connection flange 301, the inner cover 302 and the connection flange 303 of the connection pipe 114 and the flange 210, and the total distance of the three members of the former is shorter than the diameter of the wafer W, so that the wafer W can be arranged at the position across the vacuum transfer chamber 212, the inside of the connection pipe 114 and the processing chamber 201. By arranging the wafer W at such a position to collect the foreign matter, it is possible to perform an accelerated test of foreign matter detection by detecting that the particles and the fragments are detached from any one of the connection flange 301, the inner cover 302 and the connection flange 303 or from which position to float and adhere to the surface of the wafer W to generate the foreign matter.​​

[0097] The inner cover 302 covers the inner side surface of the piping inside the substantially rectangular connection pipe 114 having a corner portion with a rounded corner of a longitudinal section, is a pipe attached to the side thereof and the space inside thereof becomes a passage between the gates of the workpiece sheet W. The inner cover 302 is a cylindrical member constituted by a member based on aluminum or an alloy thereof, and a coating film is formed on the inner side surface thereof by sputtering or the like, and the coating film uses ceramic particles such as aluminum oxide, yttrium oxide or the like which have low reactivity with respect to the reactive gas used in the processing of the wafer W and the particles having high reactivity formed thereby.

[0098] At the end portion of each side of the inner cover 302 inside the connection pipe 114, a connection flange 301, 303 is arranged. These each have a ring shape of an inner peripheral wall surface which constitutes the passage between the gates described above, and the inner peripheral wall surface is in contact with the inside of the connection pipe 114 and is in contact with the vacuum transfer vessel of the first vacuum transfer unit 112 and the vacuum vessel 211 of the substrate processing unit 128-1, thereby constituting a cylindrical vessel which is coaxially connected in order along the axis in the direction of transfer of the wafer W.

[0099] In addition, the connection flanges 301, 303 of the present embodiment are portions which constitute a part of the metal-made vacuum vessel of the connection pipe 114 and are integrally formed with the connection pipe, and constitute the end portion of the connection pipe 114 which is in contact with the side wall around the gate of the vacuum transfer vessel of the first vacuum transfer unit 112. The inner side surface of the inner peripheral wall surface of these connection flanges 301, 303 which constitutes the passage between the gates of the connection pipe 114 is also provided with a member which can reduce reactivity. For example, it can be that the connection flanges 301, 303 have a ceramic coating film which covers the inner side surface, or that the connection flanges 301, 303 are formed by firing a ceramic material.

[0100] Particles or fragments which have flown away from the boundary surface between the three members or the two members adjacent thereto can adhere to the wafer W which is held at the position described above. It is inferred that the amount of adhesion is highly correlated with the amount of the substance which becomes a source of foreign matter and which adheres to the surface of the member. Thus, by checking the amount and the composition of the adhering matter of the wafer W, it is possible to determine whether maintenance or repair work of the three members described above is required.

[0101] Figure 4 An example of the flow of the gas inside the processing chamber 201 and the vacuum transfer chamber 212 around the wafer W in the foreign matter measurement described above is shown. Figure 1 is a longitudinal sectional view schematically showing Figure 4 A longitudinal sectional view of the flow of the gas around the wafer in the foreign matter measurement performed by the semiconductor manufacturing apparatus according to the embodiment shown in Figure 5In the present embodiment, the flow of the gas in the vacuum transfer chamber 212, the connecting pipe 114, and the inside of the processing chamber 201 is schematically indicated by arrows.

[0102] In the present embodiment, the inside of the vacuum transfer chamber 212 is exhausted by the dry pump 213, and the inside of the processing chamber 201 is exhausted by the turbo molecular pump 202 and the dry pump 203. Further, the inert gas (for example, nitrogen (N2) gas) is supplied to the inside of the vacuum transfer chamber 212, and the inert gas (for example, argon (Ar) gas) is supplied from the shower plate 205 to the inside of the processing chamber 201.

[0103] The amount or speed of the exhaust in the processing chamber 201 is greater than that in the vacuum transfer chamber 212, and thus the internal pressure of the processing chamber 201 is higher than that of the vacuum transfer chamber 212. The flow of the gas from the vacuum transfer chamber 212 to the processing chamber 201 occurs in the space of the gate passage of the connecting pipe 114. Here, the gas flow in the connecting pipe 114 is preferably a Knudsen flow. In general, the Knudsen flow refers to a gas flow in which the Knudsen number Kn satisfies 0.01 < Kn < 0.5.

[0104] The wafer W held on the extension 113' is disposed only by a distance L below the ceiling surface of the passage between the gates, the inner cover 302, and the inner side wall of the connecting flange 303 constituting the passage of the inside of the connecting pipe 114.

[0105] In the present embodiment, with respect to the pressure in the vacuum transfer chamber 212, the amount or speed of the supply of the nitrogen gas or the amount or speed of the exhaust of the connected dry pump 213 is adjusted so that the flow of the nitrogen gas between the wafer W and the inside of the connecting pipe 114 and toward the processing chamber 201 is given a diffusion in the region of the Knudsen flow.

[0106] The nitrogen gas in the vacuum transfer chamber 212 is drawn by the operation of the dry pump 213 connected to the bottom surface of the vacuum container of the first vacuum transfer unit 112, flows from the space above the arm of the vacuum transfer robot 113 in the inside of the vacuum transfer chamber 212 toward the lower side, and passes through the space around the opening of the gate communicating with the passage of the inside of the connecting pipe 114. At this time, a part of the nitrogen gas flows into the passage between the gates of the connecting pipe 114, and the other part flows downward around the wafer W and the extension 113' of the vacuum transfer robot 113, flows into the space below the arm, and is exhausted to the outside of the vacuum transfer chamber 212 by the dry pump 213.

[0107] On the other hand, the argon gas supplied from the gas introduction port of the shower plate 205 to the inside of the processing chamber 201 passes through the space around the sample stage 209, that is, the space between the inner side wall of the processing chamber 201 and the outer peripheral side wall of the sample stage 209, and flows into the space below the sample stage 209.

[0108] A portion of the nitrogen gas flowing into the passage between the gates of the connection pipe 114 from the vacuum transfer chamber 212 passes through the opening of the gate facing the processing chamber 201 and flows into the processing chamber 201 together with the argon gas, and flows toward the lower side around the wafer W, the extension 113' of the vacuum transfer robot 113, and the sample table 209, thereby flowing into the lower portion of the processing chamber 201 below the sample table 209. The gas flowing into the processing chamber 201 below the sample table 209 is exhausted to the outside of the processing chamber 201 through the exhaust port 214 by the operation of the turbo molecular pump 202 and the dry pump 203.

[0109] The nitrogen gas in the vacuum transfer chamber 212 of the present embodiment flows as an intermediate flow from the vacuum transfer chamber 212 into the passage between the gates inside the connection pipe 114, passes through the inside of the passage in the state of the intermediate flow, and thereby the intermolecular collision inside becomes dominant, and the diffusivity is reduced compared to the molecular flow in which collision with the wall is dominant. Therefore, since the particles and fragments that are the sources of foreign matter detached from the inner side surfaces of the three members diffuse while colliding with the molecules of nitrogen, it is assumed that the diffusivity thereof is sufficiently small compared to the 300 mm diameter of the wafer.

[0110] Thus, the particles and fragments that are foreign matter detached from the inner side surfaces of the three members can be inhibited from diffusing beyond the size of the wafer W surface, and fall from the upper side to the lower side while falling within the relatively small area of the wafer W. More preferably, the particles and fragments are concentrated together in a state close to vertical fall and adhere. Thus, when mapping the foreign matter adhering to the surface of the wafer W, it is possible to easily derive the correspondence with the source of the foreign matter.

[0111] Further, assuming that the height of the wafer W surface and the ceiling surface of the passage between the gates is sufficiently expanded, the particles and fragments detached from the inner side surfaces of the three members can also flow within the processing chamber 201 of the substrate processing unit 128-1 during the period until they adhere to the wafer W without adhering to the upper surface of the wafer W. Thus, it is preferable that the distance L of the wafer W from the ceiling surface be set to obtain a sufficient number of particles and fragments by foreign matter collection.

[0112] Such a state of the particles and the like falling from above the wafer W is shown in Figure 5 . Figure 4 is a longitudinal sectional view schematically showing Figure 5 the state of the particles and the like adhering in the foreign matter measurement. In Figure 4 , it is shown that, in the state of holding the wafer W at the position shown in Figure 5 , fine cracks and the like are generated in the inner peripheral wall surfaces of the connection flange 301, the inner cover 302, and the connection flange 303, and an example (model) of the movement of the particles generated by detachment therefrom is inferred.

[0113] exist Figure 6 In the diagram, symbol 501 represents a collection of particles generated from the surface of the connecting flange 301 on the processing chamber 201 side. This particle group 501 is attached to a region from the center of the wafer W surface near the substrate processing unit 128-1. Symbol 502 represents a collection of particles generated from the surface of the inner cover 302. This particle group 502 is attached to the central portion of the wafer W surface. Symbol 503 represents a collection of particles generated from the connecting flange 303 on the vacuum transport chamber 212 side. This particle group 503 is attached to a region from the center of the wafer W surface near the vacuum transport chamber 212.

[0114] Furthermore, in the passage between the gates of the connecting pipe 114, particles generating gas flow from the vacuum transport chamber 212 toward the processing chamber 201. Therefore, particle groups 501, 502, and 503 descend and move toward the processing chamber 201 after detachment. Consequently, the attachment position of each particle group also becomes a position that, viewed from above, moves generally toward the processing chamber 201 from the detachment position. Therefore, in the case of a circular or similarly shaped test wafer W, the preferred position is one where the surface area of ​​the wafer W protruding into the processing chamber 201 from the gate opening of the processing chamber 201 is greater than the area protruding from the gate opening of the vacuum transport chamber 212. Furthermore, the shape of the test wafer W is not limited to circular; for example, it can also be rectangular.

[0115] use Figure 6 The method for measuring foreign matter on wafer W implemented by the semiconductor manufacturing apparatus 100 of this embodiment will be described. Figure 1 It means Figure 4 The flowchart illustrates the steps for foreign object collection and measurement during the maintenance and operation of the vacuum processing apparatus according to the illustrated embodiment. Steps S601 to S607 constitute the foreign object collection process, and steps S608 onwards constitute the foreign object measurement process.

[0116] like Figure 6 , 5 As shown, the process of measuring particles (foreign matter) on the wafer W during the maintenance operation of the substrate processing unit 128-1 will be described. Furthermore, the following operations are performed based on command signals from the control device (not shown) described above.

[0117] exist Figure 3 In the first step of maintenance operation, the control device activates the exhaust section of the substrate processing unit 128-1, including the turbomolecular pump 202, in step S601 to exhaust the air from the processing chamber 201 and reduce the pressure to a given vacuum level, particularly a high vacuum state in this example (e.g., 9E). -4(Approximately Pa). Similarly, in step S602, the control device drives the dry pump 203 to exhaust air from the vacuum transport chamber 212, reducing the vacuum level to a given vacuum degree, which is a value in the range from low vacuum to medium vacuum (e.g., 1E). -1 (Approximately Pa). Additionally, steps S601 and S602 can be performed in parallel.

[0118] Next, in step S603, the control device vents the vacuum transport chamber 212 while simultaneously introducing nitrogen gas into it, adjusting the pressure to a value within a given range. Specifically, this is set here to allow the gas and particle flow within the passage between the gates to diffuse into an intermediate flow during foreign matter collection. Furthermore, the introduced nitrogen gas continues to flow continuously during foreign matter collection.

[0119] Then, in step S604, the control device drives the transport robot to remove the test wafer W from inside the FOUP and transport it from the atmospheric side block 101 to the vacuum side block 102. Specifically, after the test wafer W is moved into the locking chamber 107, the locking chamber 107 is vented, thereby reducing the pressure to the same level as the inside of the vacuum transport chamber 212. In addition, the test wafer W is a wafer W using an unused Si substrate.

[0120] Next, in step S605, the control device opens the processing valve 116 between the gate passage in the connecting pipe 114 and the processing chamber 201. The gate valve 109 can be opened before the start of foreign matter collection, or the processing valve 116 can be opened in a step after step S602 instead of step S605.

[0121] Next, in step S606, the control device drives the transport robot to remove the test wafer W from the locking chamber 107 and pass it through the vacuum transport chamber 212, as shown. Figure 3 As shown, it is transported to each position (foreign object collection position) of the processing chamber 201, which spans the passage between the gates inside the vacuum transport chamber 212 and the connecting pipe 114, and maintained in that position.

[0122] exist Figure 7 In the example, the test wafer W is held at a given distance away from each component below the ceiling surface of the cylindrical passage formed by the inner peripheral walls of the connecting flange 301, inner cover 302 and connecting flange 303 connected in sequence.

[0123] While maintaining this state, the test wafer W is held for a given period in step S607. Also, at this time, nitrogen gas is continuously introduced into the vacuum transfer chamber 212, and evacuation of each of the vacuum transfer chamber 212, the processing chamber 201 based on the operation of the dry pump 213 and the turbo molecular pump 202 is continued.

[0124] Thereafter, in step S608, detection of the particles adhering to the surface of the test wafer W is performed. Specifically, first, the control device drives the transfer robot to carry the test wafer W out from the foreign matter collection position and to the original FOUP. The test wafer W is carried in a state of being shielded from the outside from the FOUP to the foreign matter detector disposed at a remote position, and analysis of the particles is performed by the foreign matter detector.

[0125] In the foreign matter detector, for example, the components of the substance constituting the particles and the ratio thereof (composition) are detected, the kind of the particles and the number thereof are detected according to the component of the specific substance or the ratio thereof, and data in which the kind of the different particles and the number thereof are associated with the position on the wafer W is created. The control device creates a foreign matter map based on the data, and transfers the foreign matter map from the foreign matter detector to a storage device such as a hard disk communicably connected, stores and saves it.

[0126] An example of such a foreign matter detector will be described using Figure 7 . Figure 6 is a schematic plan view showing a foreign matter detector used in the foreign matter detection in the embodiment shown in Figure 7 .

[0127] Figure 6 In the foreign matter detector 700 that detects the foreign matter on the surface of the wafer W shown in Figure 7 , the test wafer W that has had the particles adhered thereto for a given period in step S608 of the above-described embodiment is further carried to the foreign matter detector 700 and placed on the loader 701. Figure 3

[0128] Thereafter, the test wafer W is taken out from the loader 701 by the transfer arm 702 and carried to the pre-aligner 703. After adjustment of the alignment of the test wafer W is performed by detecting the notch (alignment mark) of the test wafer W on the rotary stage 704 of the pre-aligner 703, the wafer W is transferred to the measurement position 705 and detection of the particles is performed.

[0129] That is, as data, the position where the particles have adhered in the test wafer W, the kind of the particles, and the number thereof (here, the number of particles of each kind that have been counted by the counter inside the foreign matter detector 700) are calculated. For example, with respect to Figure 6 ​The areas projected onto the upper surface of the wafer W from above the connecting flange 301, inner cover 302, and connecting flange 302 are assumed to be the attachment areas of particles that have detached from the connecting flange 301, inner cover 302, and connecting flange 302, respectively. These assumed attachment areas are then divided into regions on the wafer W in coordinate data.

[0130] The coordinate data of these areas are input as information to the foreign object detector 700 via an input device (not shown). Based on the coordinates of each particle in the recorded foreign object map data, the foreign object detector 700 calculates the number of particles within the assumed areas attached to the wafer W and displays the result on a display device (not shown) of the foreign object detector 700. Alternatively, the calculated number of particles in each area can be transmitted as data to the semiconductor manufacturing apparatus 100 via a communication unit.

[0131] exist ​ After the foreign object detection is completed in step S608, in the next step S609, the control device analyzes the foreign object map based on the type and number of particles attached to the assumed area of ​​the wafer W. Furthermore, the control device detects the type and number of particles of each type in each area, and based on this, in step S610, compares the number of particles from the connecting flange 301, inner cover 302, and connecting flange 303 with a predetermined upper limit of the allowable range. Through this comparison, the presence and location of particles that serve as foreign object sources can be determined.

[0132] Based on the results of the above comparison, since the number of particles generated from any one of the connecting flange 301, inner cover 302, and connecting flange 303 exceeds the upper limit, it is determined that the foreign object is outside the allowable range. In this case, a notification is displayed on the semiconductor manufacturing apparatus 100 (not shown) that a component replacement or cleaning (maintenance work) is required. On the other hand, if it is determined that the foreign object is within the allowable range, a notification is displayed that no maintenance work is required.

[0133] Alternatively, the foreign object detector 700 can directly perform the determination and notification without going through the control device. In this case, after the maintenance operation for particle analysis is completed, it switches to a maintenance operation mode for component replacement or cleaning, and the interior of the connecting pipe 114 or the first vacuum transport unit 112 is pressurized to atmospheric pressure. Then, at least the upper cover component is removed to allow for open-atmosphere operation, and three components are removed from the connecting pipe 114 or the first vacuum transport unit 112 for cleaning.

[0134] In contrast, in a case where the number of particles generated from any one of the connection flange 301, the inner cover 302, and the connection flange 303 is less than the upper limit value, and it is determined that the foreign matter is within the allowable range, the control device determines that the operation for the next implemented mass production of semiconductor devices can be continued, and the operation of the semiconductor manufacturing device 100 shifts to a preparatory operation for the mass production operation. The result of such determination is also notified on a display (not shown) of the semiconductor manufacturing device 100. As described above, the maintenance operation ends.

[0135] If the cumulative value of the number of wafers W processed and the time during which the plasma is formed reaches a given value, the maintenance operation described above is implemented when the control device makes the determination. Not limited thereto, the foreign matter measurement similar to the case of the maintenance operation described above can be implemented in a case where the semiconductor manufacturing device 100 has been assembled, for example, in a case where the assembly has been performed in a factory where the manufacturing is performed, in a case where the assembly is initially performed at a position where the process for the mass production of the cleaning chamber and the like is performed, or in a case where at least one of the substrate processing units 128, the first vacuum transfer chamber 112, the second vacuum transfer chamber 122, and the like, which constitute the units of the semiconductor manufacturing device 100, is replaced or newly added.

[0136] According to the present embodiment, as in a case where the arbitrary substrate processing unit 128 is connected to the vacuum transfer chamber 212 through the connection pipe 114, in a region where the positions at which the plurality of members are connected to each other are located at a distance shorter than the diameter of the wafer W, the wafer W can be transported to the position of the upper surface of the wafer W across the positions at which the members are connected, and the measurement of the particles can be implemented. By analyzing the results of the measurement including the region and the number of the wafer W to which the particles are attached, it is possible to determine that the amount of attachment of the particles and the like from which member or which connection position is outside the allowable range. According to the determination result thereof, if it is within the allowable range, it is possible to determine that the assembly is good, or it is possible to determine that the product can be shipped, and the implementation as the product inspection of the semiconductor manufacturing device 100 is possible.

[0137] According to the embodiments described above, it is possible to determine with high precision whether or not the maintenance work such as the cleaning of the members inside the semiconductor manufacturing device 100, the replacement of the members, and the like is required. Therefore, it is possible to reduce the adverse effects of the generation of the foreign matter on the wafer and the processing based thereon, and the yield of the processing of the semiconductor manufacturing device 100 is improved. Further, it is possible to shorten the time required for the maintenance work, and it is possible to shorten the time other than the operation in which the wafer W is processed and the semiconductor devices are mass-produced by the semiconductor manufacturing device 100, that is, the so-called downtime, and the work efficiency of the device is improved.

[0138] - Symbol Explanation -

[0139] 100...semiconductor manufacturing apparatus (vacuum processing apparatus), 101...atmosphere-side block, 102...vacuum-side block, 103...atmosphere transfer container, 104...cassette table, 105...atmosphere transfer robot, 106, 108, 109, 110, 111, 119, 120, 121...gate valve, 107...lock chamber, 116, 117, 126, 127...process treatment valve, 112...first vacuum transfer unit, 113...vacuum transfer robot, 114, 115, 124, 125...connection pipe, 118...buffer chamber, 122...second vacuum transfer unit, 123...vacuum transfer robot, 128, 128-1, 128-2, 128-3, 128-4...substrate processing unit, 201...processing chamber, 202...turbomolecular pump, 203...dry pump, 204...dielectric window, 205...cluster plate, 206...waveguide, 207...power supply for electric field generation, 208...solenoid coil, 209...sample table, 210...flange, 211...vacuum container, 212...dry pump, 301...connection flange, 302...inner cover, 303...connection flange.

Claims

1. A foreign matter measuring method of a vacuum processing apparatus, The vacuum processing apparatus includes a processing unit having a vacuum container with a processing chamber in which a wafer is processed, and an exhaust pump that exhausts the processing chamber; a vacuum transfer unit having a transfer chamber that transfers the wafer; and a connection pipe having a passage that can transfer the wafer between the processing chamber and the transfer chamber, characterized by The foreign matter measuring method of the vacuum processing apparatus includes: a foreign matter collecting step of increasing the internal pressure of the transfer chamber compared to the internal pressure of the processing chamber, thereby generating a flow of gas in the passage from the transfer chamber to the processing chamber, transferring the wafer to a position across the transfer chamber, the passage, and the processing chamber, and holding for a given time; and a foreign matter measuring step of measuring foreign matter attached to the surface of the wafer, in the foreign matter collecting step, a gas is supplied to the inside of the transfer chamber, at the position of the wafer across the transfer chamber, the passage, and the processing chamber, the supply of the gas to the inside of the transfer chamber or the exhaust is adjusted so that the flow of the gas supplied to the inside of the transfer chamber becomes an intermediate flow.

2. The foreign matter measuring method of the vacuum processing apparatus according to claim 1, wherein when a plurality of members disposed in the passage between the transfer chamber and the processing chamber are projected in the vertical direction, the plurality of members that are projected and at least a part of the upper surface of the wafer across the transfer chamber, the passage, and the processing chamber overlap.

3. The foreign matter measuring method of the vacuum processing apparatus according to claim 2, wherein in the foreign matter collecting step, the foreign matter that falls from the plurality of members is collected by being attached to the wafer, in the foreign matter measuring step, the number of the collected foreign matter is detected, and it is determined whether maintenance work for the plurality of members is required based on the detected number of the foreign matter.

4. The foreign matter measuring method of the vacuum processing apparatus according to claim 1, the foreign matter collecting step and the foreign matter measuring step are executed in a case where an accumulated value of the number of wafers or the time processed by the processing unit exceeds a given value.

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