High-voltage Pulse Power Supply and Power Semiconductor Testing Device

Abstract

The present invention relates to the technical field of high-voltage pulse power supplies, and particularly relates to a high-voltage pulse power supply and a power semiconductor test device, including a high-voltage power generation circuit for converting an input AC signal into an output DC signal; a single-chip microcomputer control circuit for outputting a control signal according to preset information; an analog control circuit for generating a driving signal according to a sampled electrical signal and the control signal; the high-voltage output control circuit includes a single-stage driving circuit, and the single-stage driving circuit is used to adjust the output DC signal to a target DC signal according to the driving signal; the rated operating voltage of the single-stage driving circuit is greater than the output DC signal. The single-stage driving circuit in the high-voltage output control circuit can use a single MOS transistor to achieve adjustable output control of the high voltage generated by the high-voltage power generation circuit, solving the problems of complex driving of multiple MOS transistors and high failure rate when multiple MOS transistors are connected in series to achieve high-voltage output control in traditional high-voltage pulse power supplies.

Description

Technical Field

[0001] The present invention relates to the technical field of high-voltage pulse power supplies, and particularly to a high-voltage pulse power supply and a power semiconductor testing device. Background Art

[0002] The detection of power semiconductors is an important link in product yield and cost management, and plays a crucial role in the semiconductor manufacturing process. With the increasing demand for power semiconductors, the demand for testing equipment has become more urgent. In the IV characteristic parameter test for the static parameters of power semiconductors, a relatively important testing device includes a high-voltage pulse power supply, which can be used to provide a test voltage.

[0003] In the existing high-voltage pulse power supply designs, the series connection of multiple MOS transistors (MOS transistor, an abbreviation of MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor) is often used to achieve the regulation of high-voltage output. However, when using the series connection of multiple MOS transistors to achieve high-voltage output regulation, problems such as mismatching of driving signals between multiple MOSs and differences in MOS characteristics may occur, resulting in a high failure rate of the circuit. Summary of the Invention

[0004] Based on this, in view of the problems of mismatching of driving signals between multiple MOSs and differences in MOS characteristics existing in the method of using the series connection of multiple MOS transistors to achieve high-voltage output regulation in the existing high-voltage pulse power supply designs, it is necessary to provide a high-voltage pulse power supply and a power semiconductor testing device.

[0005] A high-voltage pulse power supply includes a high-voltage power generation circuit for converting an input AC signal into an output DC signal; a single-chip microcomputer control circuit for outputting a control signal according to preset information; an analog control circuit connected to the single-chip microcomputer control circuit for generating a driving signal according to a sampled electrical signal and the control signal; a high-voltage output control circuit respectively connected to the analog control circuit and the high-voltage power generation circuit for adjusting the output DC signal into a target DC signal according to the driving signal; the high-voltage output control circuit includes a single-stage driving circuit for adjusting the output DC signal into a target DC signal according to the driving signal, and the rated working voltage of the single-stage driving circuit is greater than the output DC signal.

[0006] In one embodiment, the high-voltage pulse power supply further includes a current sampling circuit, which is respectively connected to the load, the high-voltage output control circuit, and the analog control circuit, and is used to process the target DC signal to obtain the sampled electrical signal; wherein, the positive output terminal of the high-voltage output control circuit is connected to the sampling ground in the current sampling circuit, and the sampling ground in the current sampling circuit is different from the ground in the high-voltage output control circuit.

[0007] In one embodiment, the current sampling circuit includes a sampling resistor unit; an amplifying and filtering unit, connected to the sampling resistor unit, and is used to amplify and filter the signal at both ends of the sampling resistor unit to obtain the sampled electrical signal.

[0008] In one embodiment, the sampling resistor unit includes a plurality of resistor units, the plurality of resistor units are connected in parallel with each other, the resistor unit includes a sampling resistor and a switching device, the sampling resistor is connected in series with the switching device, the switching device is also connected to the single-chip microcomputer control circuit, the resistance value magnitudes of the sampling resistors in different resistor units are different, and the single-chip microcomputer control circuit is further used to control the on-off of the switching devices in different resistor units to select the sampling resistor that meets the test conditions.

[0009] In one embodiment, the current sampling circuit further includes a clamping unit, which is respectively connected to the sampling resistor unit and the amplifying and filtering unit, and is used to limit the potential at the output end of the sampling resistor unit in the current sampling circuit.

[0010] In one embodiment, the high-voltage output control circuit further includes a filtering circuit, which is respectively connected to the high-voltage output control circuit and the single-stage driving circuit, and is used to filter the output DC signal; a switching circuit, which is respectively connected to the load and the single-stage driving circuit, and is used to control the conduction and cut-off between the high-voltage output control circuit and the load.

[0011] In one embodiment, the filtering circuit includes a filtering capacitor unit and a filtering resistor unit, the single-stage driving circuit includes a first field-effect transistor, the switching circuit includes a current-limiting capacitor unit, a current-limiting resistor unit and a second field-effect transistor. The first end of the filtering capacitor unit is connected to the positive output terminal of the high-voltage power supply generating circuit, the second end of the filtering capacitor unit is connected to the negative output terminal of the high-voltage power supply generating circuit, the first end of the filtering resistor unit is connected to the positive output terminal of the high-voltage power supply generating circuit, the second end of the filtering resistor unit is connected to the drain of the first field-effect transistor, the source of the first field-effect transistor is connected to the first end of the current-limiting capacitor unit, the gate of the first field-effect transistor is connected to the output terminal of the analog control circuit, the second end of the current-limiting capacitor unit is connected to the negative output terminal of the high-voltage power supply generating circuit, the first end of the current-limiting resistor unit is connected to the first end of the current-limiting capacitor unit, the second end of the current-limiting resistor unit is connected to the drain of the second field-effect transistor, the source of the second field-effect transistor is connected to the negative output terminal of the high-voltage power supply generating circuit, and the gate of the second field-effect transistor is connected to the single-chip microcomputer control circuit.

[0012] In one embodiment, the high-voltage power supply generating circuit includes a rectifying unit for converting an input AC signal into a DC signal; a boosting unit connected in series with the rectifying unit for boosting the DC signal to obtain a DC signal.

[0013] In one embodiment, the high-voltage pulse power supply further includes a high-speed signal acquisition circuit electrically connected to the analog control circuit and communicatively connected to the single-chip microcomputer control circuit for acquiring the sampled electrical signal and communicatively transmitting it to the single-chip microcomputer control circuit; the single-chip microcomputer control circuit is further configured to store the sampled electrical signal.

[0014] In one embodiment, the high-voltage pulse power supply further includes a host computer communicatively connected to the single-chip microcomputer control circuit for transmitting preset information to the single-chip microcomputer control circuit and for acquiring the data stored in the single-chip microcomputer control circuit.

[0015] A power semiconductor testing device includes the high-voltage pulse power supply according to any one of the above embodiments for outputting a target DC signal to a power semiconductor to be tested; a data acquisition module for acquiring a test signal of the power semiconductor to be tested; and a data analysis module connected to the data acquisition module for analyzing the test signal to obtain test result information of the power semiconductor to be tested.

[0016] The above high-voltage pulse power supply uses a high-voltage power generation circuit to convert an AC signal into a DC signal, and uses a control closed-loop formed by a single-chip microcomputer control circuit, an analog control circuit, and a high-voltage output control circuit to realize the dynamic regulation of the DC signal output by the high-voltage power generation circuit, so as to adjust the output DC signal to a preset target output signal and output it. The single-stage drive circuit in the high-voltage output control circuit can use a single MOS tube to realize the adjustable output control of the high voltage generated by the high-voltage power generation circuit, solving the problems of complex drive and high failure rate of multiple MOS tubes in series when traditional high-voltage pulse power supplies use multiple MOS tubes in series to realize high-voltage output control. Description of the Drawings

[0017] In order to more clearly illustrate the embodiments of the present specification or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments recorded in the present specification. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] Figure 1 Structural schematic diagram of the high-voltage pulse power supply in one embodiment of the present disclosure;

[0019] Figure 2 Structural schematic diagram of the high-voltage pulse power supply in another embodiment of the present disclosure;

[0020] Figure 3 Structural schematic block diagram of the current sampling circuit in one embodiment of the present disclosure;

[0021] Figure 4 Circuit connection schematic diagram of the current sampling circuit in one embodiment of the present disclosure;

[0022] Figure 5 Structural schematic block diagram of the analog control circuit in one embodiment of the present disclosure;

[0023] Figure 6 Structural schematic block diagram of the high-voltage output control circuit in one embodiment of the present disclosure;

[0024] Figure 7 Circuit connection schematic diagram of the high-voltage output control circuit in one embodiment of the present disclosure;

[0025] Figure 8 Structural schematic block diagram of the high-voltage power generation circuit in one embodiment of the present disclosure;

[0026] Figure 9 Structural schematic diagram of the high-voltage pulse power supply in one embodiment of the present disclosure;

[0027] Figure 10 This is a schematic block diagram of the structure of a power semiconductor testing device in one embodiment of the present disclosure. Detailed implementation manners

[0028] To facilitate the understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided for a more thorough and comprehensive understanding of the disclosure of the present invention.

[0029] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can also be a middle element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be a middle element at the same time. The terms "vertical", "horizontal", "left", "right", "up", "down", "front", "back", "circumferential" and similar expressions used herein are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation on the present invention.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0031] Power semiconductor detection is an important link in product yield and cost management and plays a crucial role in the semiconductor manufacturing process. Considering the current pressure in production to reduce test costs and improve product yield, the test link will occupy a more important position in the industrial chain. With the increasing demand for power semiconductors, the demand for testing equipment will become more urgent. The high-voltage pulse power supply provided by the present disclosure is mainly used for testing the IV characteristic parameters in the static parameters of power semiconductors.

[0032] The high-voltage output control part inside the existing high-voltage pulse power supply mainly adopts the method of connecting multiple MOS transistors in series. However, in the power supply switching process, it is very difficult to achieve complete synchronization of the drive signals of each MOS transistor in the way of multiple MOS transistors in series, which will lead to the phenomenon of voltage imbalance in the circuit. Moreover, with the increase of the voltage borne by the device, the phenomenon of voltage imbalance will intensify, and in severe cases, it will cause overvoltage of the device and damage. In addition, the drive of multiple MOS transistors is relatively complex and the failure rate is high.

[0033] Figure 1 The structure diagram of the high-voltage pulse power supply in one embodiment of the present disclosure is shown. In one embodiment, a high-voltage pulse power supply provided by the present disclosure may include a high-voltage power generation circuit 100, a single-chip microcomputer control circuit 200, an analog control circuit 300, and a high-voltage output control circuit 400. The high-voltage output control circuit 400 may include a single-stage drive circuit 410.

[0034] The high-voltage power generation circuit 100 is used to convert the input AC signal into an output DC signal. The single-chip microcomputer control circuit 200 is used to output a control signal according to preset information. The analog control circuit 300 is connected to the single-chip microcomputer control circuit 200 and is used to generate a drive signal according to the sampled electrical signal and the control signal. The high-voltage output control circuit 400 is respectively connected to the analog control circuit 300 and the high-voltage power generation circuit 100. The high-voltage output control circuit 400 can use the single-stage drive circuit 410 to adjust the output DC signal into a target DC signal according to the drive signal.

[0035] The high-voltage power generation circuit 100 can convert the input AC signal into an output DC signal. For example, the high-voltage power generation circuit 100 can generate an output DC voltage of 3000V / 50mA after rectification, multi-stage DC / DC isolation transformation and other processes on the input AC signal of 220Vac. Among them, no matter what kind of AC signal is input, the high-voltage power generation circuit 100 can convert the AC signal into the high-voltage output required by the subsequent stage. The value of the output signal after conversion by the high-voltage power generation circuit 100 is determined by factors such as the rectifying device, multi-stage DC / DC isolation converter and circuit design in the high-voltage power generation circuit 100. In practical applications, the high-voltage power generation circuit 100 can be designed accordingly according to actual test requirements, so that the high-voltage power generation circuit 100 outputs the required voltage. For example, according to actual test requirements, the high-voltage power generation circuit 100 is designed to generate output DC signals with values such as 3000Vdc / 50mA, 4000Vdc / 50mA, 4500Vdc / 50mA, etc.

[0036] The single-chip microcomputer control circuit 200 can output a control signal according to preset information and transmit the control signal to the analog control circuit 300. Among them, the preset information can set the value of the final output signal of the high-voltage pulse power supply. After receiving the control signal, the analog control circuit 300 can generate a drive signal according to the control signal and transmit it to the high-voltage output control circuit 400. The high-voltage output control circuit 400 can adjust the output DC signal to different target DC signals according to different drive signals, so as to realize the adjustable control of the high-voltage output generated by the high-voltage power generation circuit 100.

[0037] In the high-voltage pulse power supply provided by the present disclosure, the single-stage drive circuit 410 in the high-voltage output control circuit 400 can use a single MOS transistor to realize the adjustable control of the high voltage output generated by the high-voltage power generation circuit 100, and the output end of the single-stage drive circuit 410 can be regarded as the output end of the high-voltage pulse power supply. After receiving the drive signal output by the analog control circuit 300, the single-stage drive circuit 410 can adjust the output DC signal to a target DC signal according to the drive signal. For example, when the value of the final output signal of the high-voltage pulse power supply set in the preset information is 2000Vdc / 50mA, the single-stage drive circuit 410 can adjust the output DC signal of the high-voltage power generation circuit 100 to 2000Vdc / 50mA according to the drive signal.

[0038] Among them, the rated working voltage of the single-stage drive circuit 410 is greater than the output DC signal generated by the high-voltage power generation circuit 100. Since when the electrical signal loaded on the electronic device exceeds the rated working voltage, it may cause the device to be damaged due to overvoltage. Therefore, when selecting a device for the single-stage drive circuit 410, a device with a rated working voltage greater than the output DC signal generated by the high-voltage power generation circuit 100 can be selected to prevent the device from being damaged due to working in an overvoltage state, thereby reducing the failure rate of the circuit. In some embodiments of the present disclosure, the voltage range generated by the high-voltage power generation circuit 100 can be 0-3000Vdc / 50mA. At this voltage level, there are many types of single-tube MOS that can be selected, and the device price is relatively cheap. The single-tube high-voltage MOS is used to work in the saturation region to control the current and voltage, and then the controllable adjustment of the high-voltage pulse output of the high-voltage pulse power supply can be realized.

[0039] At the same time, the existing high-voltage pulse power supplies mainly adopt the method of digital control loop cooperating with a high-speed processing control unit to realize control in the control part. Although the control speed achieved by this scheme can meet the test requirements of high-speed equipment, when the test requirements need to ensure that the control unit has high precision and speed requirements at the same time, this control scheme has the problems of high cost and high corresponding software development difficulty.

[0040] The high-voltage pulse power supply provided by the present disclosure adopts a method in which the single-chip microcomputer control circuit 200 cooperates with the analog control circuit 300 to achieve control. The analog control circuit 300 can meet the high-speed requirements during device testing and the requirements for high-speed protection of the device and test products. Compared with the control scheme of the traditional digital control loop cooperating with a high-speed processing control unit (such as FPGA, DSP, etc.), the control scheme in which the single-chip microcomputer control circuit 200 and the analog control circuit 300 cooperate in the present disclosure can meet the test requirements of the high-voltage pulse power supply for high-speed control and measurement, with low software development difficulty and cost, and has better cost advantages.

[0041] At present, the existing high-voltage pulse power supplies mainly adopt the following three methods for the acquisition part of the output current signal. First, a sampling resistor is directly connected in series between the output and the load for measurement. However, this sampling method has high requirements for the common-mode voltage of the sampling circuit and is not applicable to high-voltage pulse power supplies with an output voltage greater than 500V. Second, a current transformer is connected in series for current measurement. Although this isolation sampling method has no requirements for the common-mode voltage, the sampling accuracy that can be achieved by this sampling method cannot meet the current test requirements for nA / uA-level small signals. Third, a resistor is connected in series between the control ground and the earth, and the current is sampled by collecting the voltage across this resistor. However, this sampling method has the problem that small signals are easily affected by interference in the ground wire, resulting in false measurement or false protection.

[0042] Figure 2 FIG. is a schematic structural diagram of a high-voltage pulse power supply in another embodiment of the present disclosure. In one embodiment, the high-voltage pulse power supply may further include a current sampling circuit 500.

[0043] The current sampling circuit 500 is respectively connected to the load, the high-voltage output control circuit 400, and the analog control circuit 300, and is used for signal processing of the target DC signal to obtain the sampled electrical signal. Among them, the positive output terminal of the high-voltage output control circuit 400 is connected to the sampling ground in the current sampling circuit 500, and the sampling ground in the current sampling circuit 500 is different from the ground connected to the high-voltage output control circuit 400. For example, the ground to which the control signal in the high-voltage output control circuit 400 is connected can be the earth, and the ground to which the control signal in the current sampling circuit 500 is connected can be the sampling ground, so that the sampling ground in the current sampling circuit 500 is different from the ground connected to the high-voltage output control circuit 400.

[0044] The current sampling circuit 500 is connected between the positive output terminal of the high-voltage output control circuit 400 and the load, and can collect the signal output by the high-voltage output control circuit 400 to obtain a sampled electrical signal. The sampled electrical signal obtained by the current sampling circuit 500 can also be transmitted to the analog control circuit 300, and the analog control circuit 300 automatically realizes the closed-loop control of the output voltage and current according to the sampled electrical signal and the input signal of the control signal by using an analog loop (voltage loop + current loop).

[0045] By connecting the sampling ground to which the control signal in the current sampling circuit 500 is connected to the positive output terminal of the high-voltage output control circuit 400, and connecting the high-voltage output to the ground of the sampling signal, there is no high-voltage common-mode signal in the common-mode voltage at both ends of the current sampling circuit 500. Therefore, the high common-mode voltage requirement of the current sampling circuit 500 does not need to be considered separately, thereby reducing the requirement for the common-mode voltage. At the same time, high-precision sampling of small signals can also be achieved. In addition, by making the sampling ground connected in the current sampling circuit 500 different from the ground connected in the high-voltage output control circuit 400, the sampling ground can be made independent of the ground, thereby preventing the interference signal in the ground from being coupled into the sampling signal and preventing the interference signal in the ground wire from interfering with the current sampling process and causing problems such as mismeasurement or misprotection. In the current signal test, the microcontroller control circuit 200 can be used to control the switching conduction of different sampling resistors 511, thereby switching different measurement ranges, and further realizing high-resolution measurement of different current precisions (such as nA / uA precision levels).

[0046] Figure 3 It is a structural schematic block diagram of the current sampling circuit in one embodiment of the present disclosure. In one embodiment, the current sampling circuit 500 may include a sampling resistor unit 510 and an amplification and filtering unit 520. The sampling resistor unit 510 is connected between the positive output terminal of the high-voltage output control circuit 400 and the load. The amplification and filtering unit 520 is connected to the sampling resistor unit 510 and is used for amplifying and filtering the signal at both ends of the sampling resistor unit 510 to obtain a sampled electrical signal.

[0047] By connecting the sampling resistor unit 510 between the positive output terminal of the high-voltage output control circuit 400 and the load, the sampled electrical signal can be obtained according to the voltage signal on the sampling resistor unit 510. The amplification and filtering unit 520 can perform amplification and filtering processing on the signal at both ends of the sampling resistor unit 510. The voltage signal after amplification and filtering is the sampled electrical signal finally obtained by the current sampling circuit 500, which can be used by the analog control circuit 300 and the high-speed signal acquisition circuit.

[0048] Figure 4Schematic diagram of the circuit connection of the current sampling circuit in one embodiment of the present disclosure. In one embodiment, the sampling resistor unit 510 may include a plurality of resistor units, and the plurality of resistor units are connected in parallel with each other. As Figure 4 shown, the resistor unit may include a sampling resistor 511 and a switching device 512. The sampling resistor 511 and the switching device 512 are connected in series to form a resistor unit. The resistance value magnitudes of the sampling resistors 511 in different resistor units are different. The sampling resistors 511 with different magnitudes can adapt to application scenarios with different test requirements. For example, the sampling resistor unit 510 may include three resistor units, and the resistance values of the sampling resistors 511 in the three resistor units may be 1Ω, 1kΩ, and 100kΩ respectively.

[0049] The switching device 512 may also be connected to the microcontroller control circuit 200, so that the microcontroller control circuit 200 can select the sampling resistor 511 corresponding to the appropriate resistance value magnitude by controlling the conduction and disconnection of the switching devices 512 in different resistor units. For example, when it is determined according to the actual test requirements that a sampling resistor 511 with a resistance of 1kΩ is needed to sample the output signal of the high-voltage output control circuit 400, the microcontroller control circuit 200 can control the switching device 512 connected to the 1kΩ sampling resistor 511 to conduct and control the switching devices 512 connected to the sampling resistors 511 with other resistance values to disconnect, so as to achieve flexible adjustment and control of the resistance value of the sampling resistor 511.

[0050] In one embodiment, as Figure 4 shown, the current sampling circuit 500 may further include a clamping unit 530. The clamping unit 530 is respectively connected to the sampling resistor unit 510 and the amplification and filtering unit 520, and is used to limit the potential of the output end of the sampling resistor unit 510 in the current sampling circuit. The clamping unit 530 may include a clamping resistor and a clamping diode. The first end of the clamping resistor is connected to the sampling resistor unit 510, the second end of the clamping resistor is connected to the first end of the clamping diode, the second end of the clamping resistor is also connected to the amplification and filtering unit, and the second end of the clamping diode is grounded.

[0051] The clamping unit 530 can be used to fix the pulse signal at both ends of the sampling resistor unit 510 to a specified voltage value and keep the original waveform shape unchanged. The current sampling circuit 500 uses the clamping unit 530 to limit the potential of the output end of the sampling resistor unit 510, which can achieve the purpose of protecting the current sampling circuit 500, thereby improving the safety of the circuit and ensuring the accuracy of the sampling result.

[0052] In one embodiment, the Guarding technology can be used to perform anti-interference processing on the current sampling circuit 500. As Figure 4As shown, a part of the circuit of the current sampling circuit 500 in the figure is enclosed by a closed metal wire, which can ensure that the electric potential between any two points on the metal wire is the same, thereby reducing the situation where tiny signals in the nA / uA level are interfered by other signals in the circuit, further ensuring the measurement accuracy, and achieving the purpose of accurately measuring the current in the current sampling circuit 500 loop.

[0053] Figure 5 This is a schematic block diagram of the structure of the analog control circuit in one embodiment of the present disclosure. In one embodiment, the analog control circuit 300 may include Figure 5 two sets of control circuits, namely the voltage loop and the current loop, as shown. The control methods of the voltage loop and the current loop are similar. After being set and controlled by the current sampling circuit 500 and the single-chip microcomputer control circuit 200, they output drive signals for controlling the driving of the MOS transistor through PI regulation.

[0054] As Figure 5 shown, the input end of the voltage loop includes two parts, namely the sampled voltage signal Vs obtained after being amplified and filtered by the current sampling circuit 500, and the specific voltage V_Set output by the single-chip microcomputer control circuit 200 according to the preset information. Similarly, the input end of the current loop also includes two parts, namely the sampled current signal Is obtained after being amplified and filtered by the current sampling circuit 500, and the specific current I_Set output by the single-chip microcomputer control circuit 200 according to the preset information. The voltage loop and the current loop respectively automatically achieve closed-loop control of the output voltage and current through PI regulation 1 and PI regulation 2. The analog control circuit 300 can automatically adjust the output drive signal according to the control signal input by the single-chip microcomputer control circuit 200 and in combination with the current output electrical signal situation of the current power supply system, so as to adjust the signal finally output by the high-voltage pulse power supply into the target DC signal.

[0055] Figure 6 This is a schematic block diagram of the structure of the high-voltage output control circuit in one embodiment of the present disclosure. In one embodiment, the high-voltage output control circuit 400 may further include a filter circuit 420 and a switch circuit 430. The filter circuit 420 can be used to filter the output DC signal. The input end of the filter circuit 420 is connected to the output end of the high-voltage power generation circuit 100, and the output end of the filter circuit 420 is connected to the single-stage drive circuit 410, that is, before the output DC signal is input to the single-stage drive circuit 410, the filter circuit 420 can be used to filter the output DC signal. The switch circuit 430 is respectively connected to the load and the single-stage drive circuit 410, and is used to control the on and off between the high-voltage output control circuit 400 and the load.

[0056] Since the voltage that the high-voltage power generation circuit 100 can generate is determined by its circuit design, and in practical applications, the voltage value output by the high-voltage pulse power supply is usually changed frequently. For example, when applied to power semiconductor testing, the parameter testing of IGBT (Insulated Gate Bipolar Transistor) usually requires a test to be completed within 20 - 200 ms. If a high voltage of 3000V needs to be output with a resolution of 1V, then the output voltage value of the high-voltage pulse power supply needs to be set to change 3000 times. Therefore, by setting the high-voltage output control circuit 400, the output DC signal generated by the high-voltage power generation circuit 100 can be adjusted, so as to achieve the purpose of the high-voltage pulse power supply outputting different voltages without changing the parameters of circuit devices.

[0057] The voltage generated by the high-voltage power generation circuit 100 is input into the filtering circuit 420. The filtering circuit 420 can perform filtering processing on the output DC signal to remove unnecessary interference, thereby improving the adjustment accuracy of the subsequent single-stage driving circuit 410 for the output DC signal. The single-stage driving circuit 410 can perform dynamic control on the filtered output DC signal and adjust the output DC signal to a target DC signal according to the received driving signal. The switching circuit 430 can also be connected to the single-chip microcomputer control circuit 200 and is turned on or off under the control of the single-chip microcomputer control circuit 200 to achieve the switching control function of the high-voltage output control circuit 400. In the high-voltage output control circuit 400 provided by the present disclosure, two functional units, namely the single-stage driving circuit 410 and the switching circuit 430, are used to respectively implement the dynamic control function and the switching control function for the output DC signal. By isolating the dynamic control function and the switching control function, the high-voltage output control circuit 400 can better perform adjustable output control on the high voltage generated by the high-voltage power generation circuit 100 to achieve the purpose of different output voltages. At the same time, the switching circuit 430 can also be used to protect the single-stage driving circuit 410 to prevent abnormal signals from affecting the normal working state of the single-stage driving circuit 410.

[0058] Figure 7 FIG. is a schematic circuit connection diagram of the high-voltage output control circuit in one embodiment of the present disclosure. In one embodiment, as Figure 7 shown, the single-stage driving circuit 410 may include a first field-effect transistor 411, the filtering circuit 420 may include a filtering capacitor unit 421 and a filtering resistor unit 422, and the switching circuit 430 may include a current-limiting capacitor unit 431, a current-limiting resistor unit 432, and a second field-effect transistor 433.

[0059] The filtering capacitor unit 421 may include a plurality of filtering capacitors connected in parallel with each other. The filtering resistor unit 422 may include a plurality of filtering resistors connected in series with each other. For example, inFigure 7 The intermediate filtering resistor unit 422 includes a filtering resistor R1 and a filtering resistor R2 connected in series. The current-limiting capacitor unit 431 may include a plurality of current-limiting capacitors connected in series with each other. The current-limiting resistor unit 432 may include a plurality of current-limiting resistors connected in series with each other. For example, in Figure 7 the current-limiting resistor unit 432 includes a current-limiting resistor R3 and a current-limiting resistor R4 connected in series.

[0060] The first end of the filtering capacitor unit 421 is connected to the positive output terminal of the high-voltage power supply generation circuit 100, and the second end of the filtering capacitor unit 421 is connected to the negative output terminal of the high-voltage power supply generation circuit 100. That is, the filtering capacitor unit 421 is connected in parallel with the positive and negative output terminals of the high-voltage power supply generation circuit 100. The first end of the filtering resistor unit 422 is connected to the positive output terminal of the high-voltage power supply generation circuit 100. The filtering capacitor unit 421 and the filtering resistor unit 422 can form an RC filtering circuit for filtering out unnecessary noise in the target DC signal output by the high-voltage output control circuit 400, thereby improving the sampling accuracy of the current in the loop.

[0061] The second end of the filtering resistor unit 422 is connected to the drain of the first field-effect transistor 411. The source of the first field-effect transistor 411 is connected to the first end of the current-limiting capacitor unit 431. The gate of the first field-effect transistor 411 is connected to the output terminal of the analog control circuit 300.

[0062] At present, the high-voltage output part inside the existing high-voltage pulse power supply mainly adopts the method of connecting multiple MOS transistors in series. By using multiple MOS transistors in series, the output voltage level of the power supply can be increased. However, during the switching process of multiple MOS in series, it is very difficult to make the driving signals completely synchronized, resulting in a certain voltage imbalance phenomenon. As the voltage borne by the device increases, the voltage imbalance intensifies. In severe cases, it will cause the problem of device damage due to overvoltage. Therefore, the method of driving multiple MOS transistors is relatively complex and has a high failure rate.

[0063] In the high-voltage pulse power supply provided by the present disclosure, a single MOS transistor is used to realize the adjustable output control of the high voltage generated by the high-voltage power supply generation circuit 100. The drain of the first field-effect transistor 411 is connected to the second end of the filtering resistor unit 422, that is, the filtered output DC signal is transmitted to the first field-effect transistor 411. The gate of the first field-effect transistor 411 is connected to the output terminal of the analog control circuit 300. The analog control circuit 300 can change the GS voltage across the first field-effect transistor 411 by inputting driving signals with different voltages, so that the first field-effect transistor 411 operates in the constant current region, and further achieve the purpose of outputting different voltages at the source of the first field-effect transistor 411.

[0064] The second terminal of the current-limiting capacitor unit 431 is connected to the negative output terminal of the high-voltage power supply generation circuit 100. The first terminal of the current-limiting resistor unit 432 is connected to the first terminal of the current-limiting capacitor unit 431. The second terminal of the current-limiting resistor unit 432 is connected to the drain of the second field-effect transistor 433. The source of the second field-effect transistor 433 is connected to the negative output terminal of the high-voltage power supply generation circuit 100. The gate of the second field-effect transistor 433 is connected to the single-chip microcomputer control circuit 200.

[0065] The current-limiting capacitor unit 431 and the current-limiting resistor unit 432 can be used to limit the magnitude of the flowing current, preventing the problem that when the load resistance is too small, the current in the loop is too large and damages other devices in the circuit. By using the single-chip microcomputer control circuit 200, reliable control of the switch of the second field-effect transistor 433 can be achieved, thereby realizing the conduction and cut-off between the switch circuit 430, the high-voltage output control circuit 400 and the load. At the same time, by isolating the dynamic control function and the switch control function, the dynamic control function of the high voltage generated by the high-voltage output control circuit 400 is realized by using a single first field-effect transistor 411, and the switch control function of the high voltage generated by the high-voltage output control circuit 400 is realized by the second field-effect transistor 433, which can reduce the voltage level requirement of the first field-effect transistor 411.

[0066] For example, when in actual application, the high-voltage output of the high-voltage pulse power supply provided by the present disclosure is 3000Vdc / 50mA, if the traditional method of using multiple MOS transistors in series to increase the output voltage level of the power supply is adopted, there are problems such as mismatched drive signals and device damage caused by differences in MOS transistor characteristics. By using the high-voltage output control circuit 400 provided by the present disclosure, the main circuit is controlled by a MOS transistor with a voltage level requirement of 4500V, realizing the function of a single MOS transistor controlling the main circuit output. At the same time, reliable cut-off is achieved through another MOS transistor with a voltage level requirement of 4500V, and the voltage level requirement of the MOS transistor in the main circuit can be reduced to below 4000V. Since the voltage level of the MOS transistor is reduced to below 4000V, there are more types of single MOS transistors available at this voltage level and the price is relatively cheap, which can effectively reduce the production and test costs. At the same time, using a single MOS transistor to realize the function of controlling the main circuit output can also avoid the device damage problems caused by mismatched drive signals and differences in MOS transistor characteristics in the multi-stage MOS transistor series connection method, and solve the problems of relatively complex drive and high failure rate of multi-stage MOS transistors.

[0067] Figure 8Schematic block diagram of the high-voltage power supply generation circuit in one embodiment of the present disclosure. In one embodiment, the high-voltage power supply generation circuit 100 may include a rectification unit 110 and a boost unit 120. The rectification unit 110 can be used to convert the input AC signal into a DC signal. The boost unit 120, which is connected in series with the rectification unit, can be used to boost the DC signal to obtain a DC signal.

[0068] Among them, the rectification unit 110 may include an AC / DC rectifier converter. The AC / DC rectifier converter can convert the input alternating current into direct current for output. The boost unit 120 may include multiple DC / DC isolation converters connected in parallel. The DC / DC isolation converter can be used to implement the conversion of the DC signal, converting the DC signal with one voltage value into a DC signal with another voltage value. The high-voltage pulse power supply provided by the present disclosure generates high-voltage direct current in application. Therefore, in some embodiments of the present disclosure, the DC / DC isolation converter is a converter that can convert low-voltage direct current into high-voltage direct current.

[0069] After receiving the input AC signal, the high-voltage power supply generation circuit 100 can use the AC / DC rectifier converter to convert the alternating current into direct current. The boost unit 120 can be used to convert the low-voltage DC signal into the high-voltage output DC signal required for the subsequent stage output. For example, the high-voltage power supply generation circuit 100 can generate the voltage 3100Vdc / 50mA required for the output of the high-voltage pulse power supply after rectifying and performing multiple-stage DC / DC isolation conversion on the input AC signal of 220Vac.

[0070] The high-voltage pulse power supply provided by the present disclosure adopts a scheme combining analog circuit control and single-chip microcomputer signal processing, which can meet the high-speed requirements for test equipment and the requirements for high-speed protection of equipment and test products in practical applications. Through the design of combining the single-chip microcomputer control circuit 200 and the analog control circuit 300, the high-voltage pulse power supply can meet the test requirements of high-speed control and measurement, and has better cost advantages compared with the high-speed control units (such as FPGA, DSP, etc.) used in traditional schemes.

[0071] Figure 9 Schematic block diagram of the high-voltage pulse power supply in one embodiment of the present disclosure. In one embodiment, the high-voltage pulse power supply may further include a high-speed signal acquisition circuit 600. The high-speed signal acquisition circuit 600 is electrically connected to the analog control circuit 300 and communicatively connected to the single-chip microcomputer control circuit 200, and is used to acquire the sampled electrical signal at the input end of the analog control circuit 300 and communicatively transmit it to the single-chip microcomputer control circuit 200. The single-chip microcomputer control circuit 200 is also used to store the sampled electrical signal.

[0072] The high-voltage output control circuit 400 can perform adjustable output control on the high voltage generated by the high-voltage power supply generation circuit 100. The current sampling circuit 500 is connected between the positive output terminal of the high-voltage output control circuit 400 and the load to implement the sampling function of the output current of the high-voltage output control circuit 400; at the same time, connecting the sampling ground in the current sampling circuit 500 to the positive output terminal of the high-voltage output control circuit 400 can achieve the purpose of reducing the common-mode voltage requirement. The microcontroller control circuit 200 outputs a specific voltage to the analog control circuit 300 according to the preset information obtained in advance, and the analog control circuit 300 can achieve automatic closed-loop control of the output voltage and output current through the implementation of an analog loop (voltage loop + current loop).

[0073] The high-speed signal acquisition circuit 600 can perform high-speed sampling on the current signal and voltage signal transmitted to the input terminal of the analog control circuit 300 through the high-speed AD module, and transmit the acquired signal to the storage part of the microcontroller control circuit 200 through a communication method. The microcontroller control circuit 200 will process the sampled electrical signal obtained through the high-speed AD processing unit in real time and store the data in the storage module in the microcontroller control circuit 200 to achieve the purpose of real-time data recording.

[0074] In one embodiment, the high-voltage pulse power supply may further include a host computer. The host computer, communicatively connected to the microcontroller control circuit 200, can be used to transmit preset information to the microcontroller control circuit 200 and also to obtain the data stored in the microcontroller control circuit 200.

[0075] The tester can input preset information into the host computer in advance. The preset information can be the setting information for the target DC signal finally output by the high-voltage pulse power supply. Send a control instruction from the host computer to the microcontroller control circuit 200 to transmit the preset information to the microcontroller control circuit 200. The microcontroller control circuit 200 can perform DA setting according to the preset information. After completing the DA setting, it can achieve automatic adjustment of the output voltage and output current through the analog loop control of the analog control circuit 300. After the dynamic adjustment of the analog control circuit 300, the output signal of the high-voltage pulse power supply will enter the stable output stage. After the voltage signal and current signal output by the output signal of the high-voltage pulse power supply are sampled and amplified by the current sampling circuit 500, the high-speed signal acquisition circuit will sample the signal after the current sampling circuit 500 samples and amplifies it, and transmit this signal to the microcontroller control circuit 200 through a communication method for storage.

[0076] In one embodiment, the host computer can turn a single measurement into a corresponding test sequence and download the test sequence into the storage unit of the single-chip microcomputer control circuit 200 through the host computer. The single-chip microcomputer control circuit 200 can send control signals according to the test sequence stored in the storage unit. The single-chip microcomputer control circuit 200 can control the output of corresponding voltage or current signals to the analog control circuit 300 through SPI (Serial Peripheral Interface) communication according to the DA setting. The analog control circuit 300 can achieve closed-loop control of the output through a hardware PID (Proportional Integral Derivative) control loop.

[0077] As Figure 9 shown by the dotted connection part in, the single-chip microcomputer control circuit 200 can also be respectively connected to the high-voltage power supply generation circuit 100, the analog control circuit 300, and the current sampling circuit 500, and is used to control the working states of each active device in the high-voltage power supply generation circuit 100, the analog control circuit 300, and the current sampling circuit 500. In some other embodiments, the control of the working states of each active device in the high-voltage power supply generation circuit 100, the analog control circuit 300, and the current sampling circuit 500 can also be realized by other control methods.

[0078] The high-speed signal acquisition circuit 600 real-time acquires the voltage signal and current signal that are transmitted to the input end of the analog control circuit 300 after being sampled and amplified by the current sampling circuit 500. The high-speed signal acquisition circuit 600 can also perform real-time data transmission with the single-chip microcomputer control circuit 200 through SPI communication, and the single-chip microcomputer control circuit 200 stores the acquired signals in a certain format. After the entire test sequence is completed, the single-chip microcomputer control circuit 200 can transmit all the data collected and / or stored during the entire test process to the host computer. The high-voltage pulse power supply provided by the present disclosure can separate the control and acquisition into two independent processes to solve the problem that high requirements are imposed on the control and acquisition speeds for real-time data transmission, and has a relatively good cost advantage compared with high-speed control units (such as FPGA, DSP).

[0079] Based on the description of the above embodiments of the high-voltage pulse power supply, the present disclosure also provides a power semiconductor testing device. The device may include a system (including a distributed system), software (application), module, component, server, client, etc. that uses the method described in the embodiments of this specification and combines the necessary implementation hardware. Based on the same innovative concept, the devices in one or more embodiments provided by the embodiments of the present disclosure are as described in the following embodiments. Since the implementation solutions for solving problems in the power semiconductor testing device are similar to those of the high-voltage pulse power supply, the implementation of the specific devices of the high-voltage pulse power supply in the embodiments of this specification can refer to the implementation of the foregoing embodiments, and repeated parts will not be elaborated. As used hereinafter, the term "unit" or "module" may be a combination of software and / or hardware that can implement a predetermined function. The devices described in the following embodiments can be implemented by software, hardware, or a combination of software and hardware.

[0080] Figure 10 FIG. is a schematic block diagram of the structure of a power semiconductor testing device in an embodiment of the present disclosure. In one embodiment, the power semiconductor testing device may include the high-voltage pulse power supply 10, a data acquisition module 20, and a data analysis module 30 described in any one of the above embodiments. The high-voltage pulse power supply 10 may be used to output a target DC signal to the power semiconductor to be tested. The data acquisition module 20 may be used to acquire the test signal of the power semiconductor to be tested. The data analysis module 30, which is connected to the data acquisition module 20, may be used to analyze the test signal to obtain the test result information of the power semiconductor to be tested.

[0081] Each module in the above power semiconductor testing device may be implemented in whole or in part by software, hardware, and their combination. The above modules may be embedded in the processor of the computer device in hardware form or independent of it, or stored in the memory of the computer device in software form, so that the processor can call and execute the operations corresponding to the above respective modules.

[0082] Regarding the high-voltage pulse power supply 10 in the above embodiments, the specific manner in which each module performs operations has been described in detail in the embodiments related to the high-voltage pulse power supply, and will not be elaborated here.

[0083] It can be understood that the various embodiments of the above methods, devices, etc. in this specification are all described in a progressive manner. The same / similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. For the relevant parts, refer to the description of other method embodiments.

[0084] It should be noted that the above-described devices, electronic devices, servers, etc. may also include other embodiments according to the description of the method embodiments. The specific implementation manners may refer to the description of the relevant method embodiments. At the same time, new embodiments formed by the mutual combination of the features among the various methods, as well as the device, equipment, and server embodiments, still fall within the scope of the embodiments covered by the present disclosure, and will not be elaborated one by one here.

[0085] In the description of this specification, the description referring to terms such as "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0086] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered that the scope described in this specification is covered.

[0087] The above-described embodiments only represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the appended claims.

Claims

1. A high voltage pulse power supply, characterized in that: Comprising: A high-voltage power generation circuit for converting an input AC signal into an output DC signal; A single-chip microcomputer control circuit for outputting a control signal according to preset information; An analog control circuit connected to the single-chip microcomputer control circuit for generating a drive signal according to a sampled electrical signal and the control signal; A high-voltage output control circuit respectively connected to the analog control circuit and the high-voltage power generation circuit for adjusting the output DC signal to a target DC signal according to the drive signal; The high-voltage output control circuit includes a single-stage drive circuit for adjusting the output DC signal to a target DC signal according to the drive signal, and the rated working voltage of the single-stage drive circuit is greater than the output DC signal; The high-voltage pulse power supply further includes: A current sampling circuit respectively connected to a load, the high-voltage output control circuit and the analog control circuit for performing signal processing on the target DC signal to obtain the sampled electrical signal; Wherein, the positive output terminal of the high-voltage output control circuit is connected to the sampling ground in the current sampling circuit, and the sampling ground in the current sampling circuit is different from the ground connected to the high-voltage output control circuit; The current sampling circuit includes: A sampling resistor unit, the sampling resistor unit includes a plurality of resistor units, the plurality of resistor units are connected in parallel with each other, the resistor unit includes a sampling resistor and a switching device, the sampling resistor is connected in series with the switching device, and the switching device is also connected to the single-chip microcomputer control circuit, and the resistance values of the sampling resistors in different resistor units are of different magnitudes; The single-chip microcomputer control circuit is further used to control the on / off of the switching devices in different resistor units to select the sampling resistor that meets the test conditions.

2. The high-voltage pulse power supply according to claim 1, characterized in that, The current sampling circuit further includes: An amplification and filtering unit connected to the sampling resistor unit for amplifying and filtering the signal at both ends of the sampling resistor unit to obtain the sampled electrical signal.

3. The high-voltage pulse power supply according to claim 2, characterized in that: The current sampling circuit further includes: A clamping unit respectively connected to the sampling resistor unit and the amplification and filtering unit for limiting the potential at the output end of the sampling resistor unit in the current sampling circuit.

4. The high-voltage pulse power supply according to claim 1, characterized in that: The high-voltage output control circuit further includes: A filtering circuit respectively connected to the high-voltage output control circuit and the single-stage drive circuit for filtering the output DC signal; A switching circuit respectively connected to the load and the single-stage drive circuit for controlling the conduction and cut-off between the high-voltage output control circuit and the load.

5. The high-voltage pulse power supply according to claim 4, characterized in that, The filtering circuit includes a filtering capacitor unit and a filtering resistor unit, the single-stage drive circuit includes a first field-effect transistor, and the switching circuit includes a current-limiting capacitor unit, a current-limiting resistor unit and a second field-effect transistor. The first end of the filtering capacitor unit is connected to the positive output terminal of the high-voltage power generation circuit, the second end of the filtering capacitor unit is connected to the negative output terminal of the high-voltage power generation circuit, the first end of the filtering resistor unit is connected to the positive output terminal of the high-voltage power generation circuit, the second end of the filtering resistor unit is connected to the drain of the first field-effect transistor, the source of the first field-effect transistor is connected to the first end of the current-limiting capacitor unit, the gate of the first field-effect transistor is connected to the output terminal of the analog control circuit, the second end of the current-limiting capacitor unit is connected to the negative output terminal of the high-voltage power generation circuit, the first end of the current-limiting resistor unit is connected to the first end of the current-limiting capacitor unit, the second end of the current-limiting resistor unit is connected to the drain of the second field-effect transistor, the source of the second field-effect transistor is connected to the negative output terminal of the high-voltage power generation circuit, and the gate of the second field-effect transistor is connected to the single-chip microcomputer control circuit.

6. The high-voltage pulse power supply according to claim 1, characterized in that The high-voltage power generation circuit includes: A rectifying unit for converting an input AC signal into a DC signal; A boosting unit connected in series with the rectifying unit for boosting the DC signal to obtain a DC signal.

7. The high-voltage pulse power supply according to claim 1, wherein, The high-voltage pulse power supply further includes: A high-speed signal acquisition circuit electrically connected to the analog control circuit and communicatively connected to the single-chip microcomputer control circuit for acquiring the sampled electrical signal and communicatively transmitting it to the single-chip microcomputer control circuit; The single-chip microcomputer control circuit is further configured to store the sampled electrical signal.

8. The high-voltage pulse power supply according to claim 3, wherein The high-voltage pulse power supply further includes: A host computer communicatively connected to the single-chip microcomputer control circuit for transmitting preset information to the single-chip microcomputer control circuit and for acquiring the data stored in the single-chip microcomputer control circuit.

9. The high-voltage pulse power supply according to claim 1, characterized in that: The current sampling circuit is a current sampling circuit subjected to anti-interference processing through isolation technology.

10. A power semiconductor testing device, characterized in that, It includes: The high-voltage pulse power supply according to any one of claims 1-9 for outputting a target DC signal to a power semiconductor to be tested; A data acquisition module for acquiring a test signal of the power semiconductor to be tested; A data analysis module connected to the data acquisition module for analyzing the test signal to obtain test result information of the power semiconductor to be tested.

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