Inductively Coupled Plasma Equipment and its Operation Method

Abstract

An inductively coupled plasma device and its operating method are provided. The method of operating the inductively coupled plasma device includes: disposing a first magnetic field shielding element adjacent to a first side of a reaction chamber; performing a first plasma process when the first magnetic field shielding element is disposed adjacent to the first side of the reaction chamber; removing the first magnetic field shielding element from the first side of the reaction chamber after the first plasma process is completed; and performing a second plasma process after removing the first magnetic field shielding element from the first side of the reaction chamber.

Description

Technical Field

[0001] This disclosure relates to an inductively coupled plasma device and its operating method. Background Technology

[0002] In recent years, semiconductor integrated circuits have experienced exponential growth. Technological advancements in integrated circuit materials and design have led to multiple generations of integrated circuits, each with smaller and more complex circuits than the previous generation. During the development of integrated circuits, as the geometric dimensions (i.e., the smallest components or lines that can be produced in a manufacturing process) shrink, the functional density (i.e., the number of interconnects per wafer area) typically increases.

[0003] Generally, this size reduction process can offer benefits such as increased production efficiency and reduced manufacturing costs. However, it also increases the complexity of manufacturing and producing integrated circuits. To achieve these advancements, corresponding research and development is needed in integrated circuit processes and manufacturing equipment. In one example, a plasma manufacturing system is used to perform a plasma etching process on a substrate. In the plasma etching process, plasma generates volatile etching products through a chemical reaction between the elements of the material being etched from the substrate surface and reactive substances generated by the plasma. Summary of the Invention

[0004] This disclosure provides a method for operating an inductively coupled plasma device. The method includes: disposing a first magnetic field shielding element adjacent to a first side of a reaction chamber; performing a first plasma process while the first magnetic field shielding element is disposed adjacent to the first side of the reaction chamber; removing the first magnetic field shielding element from the first side of the reaction chamber after the first plasma process is completed; and performing a second plasma process after removing the first magnetic field shielding element from the first side of the reaction chamber.

[0005] This disclosure provides a method for operating an inductively coupled plasma device, comprising: disposing a first magnetic field shielding element adjacent to a first side of a reaction chamber; performing a first plasma process while the first magnetic field shielding element is disposed adjacent to the first side of the reaction chamber; after the first plasma process is completed, disposing a second magnetic field shielding element adjacent to the first side of the reaction chamber; and performing a second plasma process while both the first and second magnetic field shielding elements are disposed adjacent to the first side of the reaction chamber.

[0006] This disclosure provides an inductively coupled plasma device. The inductively coupled plasma device includes a reaction chamber, a wafer substrate, a first magnetic field shielding element, and a second magnetic field shielding element. The reaction chamber has a body and a dielectric substrate, wherein the body and the dielectric substrate define a space. The wafer substrate is disposed in the reaction chamber to support a substrate. The first magnetic field shielding element is detachably disposed on the outer surface of the body. The second magnetic field shielding element is detachably disposed on the outer surface of the body. Attached Figure Description

[0007] The nature of this disclosure can be understood from the following detailed description and accompanying drawings. It should be noted that many features are not drawn to industry-standard scale. In fact, the dimensions of many features can be arbitrarily increased or decreased for clarity of discussion.

[0008] Figure 1 This is a cross-sectional schematic diagram of an inductively coupled plasma device according to a partial embodiment of the present disclosure;

[0009] Figure 2 This is a perspective view of an inductively coupled plasma device according to a portion of the embodiments disclosed herein;

[0010] Figure 3 This is a perspective view of an inductively coupled plasma device according to a portion of the embodiments disclosed herein;

[0011] Figure 4 This is a perspective view of an inductively coupled plasma device according to a portion of the embodiments disclosed herein;

[0012] Figure 5 This is a flowchart of a method for operating an inductively coupled plasma device according to a portion of the embodiments disclosed herein;

[0013] Figures 6A to 6B This is a schematic diagram of the operation of an inductively coupled plasma device method according to certain embodiments of this disclosure at various stages;

[0014] Figure 7 This is a flowchart of a method for operating an inductively coupled plasma device according to a portion of the embodiments disclosed herein;

[0015] Figures 8A to 8J This is a schematic diagram of the semiconductor device in various stages of the manufacturing process according to some embodiments of this disclosure;

[0016] Figure 9 This is a schematic diagram of a semiconductor manufacturing equipment according to a partial embodiment of the present disclosure.

[0017] [Symbol Explanation]

[0018] 100: Inductively Coupled Plasma Equipment

[0019] 110: Reaction Chamber

[0020] 110S: Enclosed space

[0021] 112:Ontology

[0022] 112OS: Outer surface

[0023] 112GO: Gas Outlet

[0024] 114: Dielectric plate body

[0025] 114O: Opening

[0026] 116: Plasma baffle

[0027] 120: Wafer pedestal

[0028] 122: Electrode

[0029] 130: Coil

[0030] 140: Gas Conveyor

[0031] 150: Cover

[0032] 150OS: Outer surface

[0033] 160: Fastener

[0034] 160H: Locking hole

[0035] 162, 164: Fasteners

[0036] 160T: Slot

[0037] 170: Magnetic field shielding element

[0038] 170H: Locking Hole

[0039] 170LA~170LF: Position Configuration

[0040] 172, 174: Magnetic field shielding elements

[0041] 172a~172d: Main magnetic field shielding elements

[0042] 172a'~172d': Secondary magnetic field shielding element

[0043] 180: Ceramic support base

[0044] 190:Terminal

[0045] 200: Semiconductor manufacturing equipment

[0046] 300: Housing

[0047] 300G: Wafer Channel

[0048] 910: Semiconductor substrate

[0049] 910R: Groove

[0050] 912: Active Zone

[0051] 920: Rigid masking layer

[0052] 922: Hard Mask

[0053] 930: Bottom anti-reflective layer

[0054] 932: Bottom anti-reflective layer

[0055] 940: Patterned photoresist layer

[0056] 950: Shallow trench isolation zone

[0057] 960: Gate dielectric layer

[0058] 962: Gate Dielectric

[0059] 970: Gate electrode layer

[0060] 972: Gate electrode

[0061] 980: Hard mask layer

[0062] 982: Rigid Mask

[0063] 990: Bottom anti-reflective layer

[0064] 992: Bottom anti-reflective layer

[0065] 1000: Patterned photoresist layer

[0066] 1100: Source / Drain Region

[0067] W: substrate

[0068] M, N: Methods

[0069] S1~S8, P1~P5: Steps

[0070] Ga, Ga', Gb, Gb', Gc, Gc': gases

[0071] Pa, Pa', Pb, Pb', Pc, Pc': Plasma

[0072] OS: Outer Surface

[0073] OSH: Locking Hole

[0074] LP: Loading Port

[0075] TC: Device Front-End Module

[0076] LC: Load Locking Chamber

[0077] BC: Buffer Room

[0078] WP: Wafer Transfer Box

[0079] WI: Wafer Entry Room

[0080] WO: Wafer Outbound Room

[0081] A1, A2: Robotic arms Detailed Implementation

[0082] The following disclosure provides numerous different implementations or embodiments to achieve different features of the provided patent subject matter. Many elements and arrangements will be described below with reference to specific embodiments to simplify the disclosure. These embodiments are, of course, illustrative only and are not intended to limit the disclosure. For example, the statement "a first feature is formed on a second feature" encompasses various implementations, including those where the first and second features are in direct contact, and those where an additional feature is formed between the first and second features so that they are not in direct contact. Furthermore, in the various embodiments, the disclosure may repeat reference numerals and / or letters. This repetition is for simplification and clarity and is not intended to indicate any relationship between the various implementations and / or configurations discussed.

[0083] Furthermore, spatially relative terms, such as "lower," "below," "below," "under," "upper," and "above," are used here to simply describe the relationship between one element or feature and another, as shown in the figure. In use or operation, in addition to the orientation shown in the figure, these spatially relative terms cover different orientations of the device. Alternatively, these devices may be rotatable (rotating 90 degrees or other angles), and the spatially relative descriptive terms used here can be interpreted accordingly.

[0084] In an inductively coupled plasma device, a dielectric plate is positioned between the induction coil and the plasma, for example, on the periphery or top of the cavity. An RF source inputs an RF current into the coil to generate an induced RF magnetic field, which in turn induces an RF electric field within the cavity, opposite to the RF current. In this way, the RF source can be responsible for inductively coupling to generate plasma and controlling the plasma density.

[0085] Figure 1This is a cross-sectional schematic diagram of an inductively coupled plasma device 100 according to some embodiments of the present disclosure. In some embodiments, the inductively coupled plasma device 100 is operable to perform a plasma etching process, such as plasma etching of metals, dielectrics, semiconductors, and / or mask materials from the surface of a substrate W. For example, it can be used in planar transistor manufacturing processes to etch a bottom antireflective coating (BARC), polysilicon, and a mask. In some other embodiments, the inductively coupled plasma device 100 is operable to perform a deposition process, such as plasma deposition of metals, dielectrics, semiconductors, and / or mask materials on the surface of the substrate W. In some other embodiments, the inductively coupled plasma device 100 is operable to perform a plasma treatment, such as plasma treatment of metals, dielectrics, semiconductors, and / or mask materials on the surface of the substrate W.

[0086] In some embodiments, the inductively coupled plasma device 100 includes a reaction chamber 110, a wafer substrate 120, a coil 130, a gas delivery device 140, a fixture 160, and a magnetic field shielding element 170.

[0087] In some embodiments, the reaction chamber 110 includes a body 112 and a dielectric window 114. The body 112 and the dielectric window 114 define a sealed space 110S of the reaction chamber 110. In some embodiments, the sealed space 110S of the reaction chamber 110 is insulated from the external environment and can be maintained in a suitable state, such as a vacuum or a pressure below atmospheric pressure.

[0088] In some embodiments, a wafer pedestal 120 is disposed within a reaction chamber 110 and serves to support a substrate W. The wafer pedestal 120 may include an electrostatic chuck and / or a clamp ring (not shown) to secure the substrate W during the process. The wafer pedestal 120 may also include cooling and / or heating elements (not shown) to control the temperature of the wafer pedestal 120. In some embodiments, the wafer pedestal 120 may further include an electrode 122 coupled to an RF generator. During the plasma processing, the electrode 122 may be biased onto an RF voltage by the RF generator. The biased electrode 122 can be used to bias incoming process gases and help excite them into plasma. Furthermore, the electrode 122 can maintain the plasma during the plasma processing.

[0089] In some embodiments, coil 130 is disposed on dielectric plate 114. Coil 130 is electrically coupled to a plasma radio frequency power supply (not shown). Dielectric plate 114 allows radio frequency energy provided by the plasma power supply to be transmitted via coil 130 to the enclosed space 110S of reaction chamber 110. Thus, by using coil 130 to transmit radio frequency energy via dielectric plate 114 to the enclosed space 110S of reaction chamber 110, the process gas within the enclosed space 110S of reaction chamber 110 can form inductively coupled plasma, thereby enabling etching, deposition, and / or other plasma processes on substrate W. In some embodiments, inductively coupled plasma apparatus 100 may optionally include a cover 150 for covering coil 130 and dielectric plate 114 to prevent dust contamination.

[0090] In some embodiments, the dielectric plate 114 has an opening 114O connected to a gas delivery device 140. The gas delivery device 140 is connected to a gas supply source (not shown) and is used to supply process gas or other suitable gases (e.g., cleaning gas, protective gas, etc.) to the enclosed space 110S of the reaction chamber 110. In various embodiments, the process gas may be an etching gas, a deposition gas, a treatment gas, a carrier gas (e.g., nitrogen, argon, etc.), other suitable gases, and combinations thereof. The number of gas delivery devices 140 and openings 114O may be one or more. In some embodiments, the gas delivery devices 140 and openings 114O may be located approximately at the center of the coil 130. In some other embodiments, the gas delivery devices 140 and openings 114O may be located off-center from the coil 130. In some embodiments, the body 112 may include a gas outlet 112GO, which may be connected to a vacuum pump (not shown) to remove air from the enclosed space 110S.

[0091] In some embodiments, the magnetic field shielding element 170 may be selectively disposed on each outer surface 150OS of the cover 150 and each outer surface 112OS of the body 112. The material of the magnetic field shielding element 170 may be a suitable metal plate capable of blocking external magnetic fields. For example, the material of the magnetic field shielding element 170 may be a transition metal or other suitable material. In some embodiments, the material of the magnetic field shielding element 170 may be a group IV to eleven metal. In some embodiments, the material of the magnetic field shielding element 170 may be molybdenum (Mo), iron (Fe), nickel (Ni), their alloys, or combinations thereof.

[0092] In some embodiments, the magnetic field shielding element 170 may be secured to the outer surfaces 112OS and 150OS via a fastener 160. For example, the fastener 160 may be secured (e.g., locked to) the outer surface 112OS of the body 112 and / or the outer surface 150OS of the cover 150. The fastener 160 may include one or more slots 160T to receive the magnetic field shielding element 170. Hereinafter, the combination of the outer surface 112OS of the body 112 and the outer surface 150OS of the cover 150 is referred to as the outer surface OS.

[0093] The magnetic field shielding element 170 may include a magnetic field shielding element 172 located on the side of the reaction chamber 110 and a magnetic field shielding element 174 located above the reaction chamber 110. The magnetic field shielding elements 172 and 174 may be separated from each other and can be independently and selectively disposed around the reaction chamber 110. The fixing member 160 may include a fixing member 162 located on the side of the reaction chamber 110 and a fixing member 164 located above the reaction chamber 110 to support the magnetic field shielding elements 172 and 174, respectively.

[0094] By configuring the fixture 160 and the magnetic field shielding element 170, the operator can adjust the distribution of the magnetic field shielding element 170 around the reaction chamber 110 according to the desired plasma process, in order to effectively isolate the Earth's magnetic field. For example, different distributions of the magnetic field shielding element 170 can be used to perform various plasma processes.

[0095] In some embodiments disclosed herein, when the magnetic field shielding element 172 is disposed on the outer surface 112OS of the body 112, the upper surface of the magnetic field shielding element 172 may be higher than the upper surface of the dielectric substrate 114, and the lower surface of the magnetic field shielding element 172 may be lower than the lower surface of the wafer substrate 120. Specifically, the upper surface of the magnetic field shielding element 172 may be higher than the coil 130, and the lower surface of the magnetic field shielding element 172 may be lower than the lower surface of the electrode 122 in the wafer substrate 120. Thus, when the magnetic field is generated by the coil 130, the magnetic field shielding element 172 can surround the area between the coil 130 and the electrode 122, thereby preventing the geomagnetic field from affecting the plasma in this area. In this way, the plasma in this area can be effectively controlled by the coil 130 and the electrode 122 to achieve the desired effect, such as uniform etching or non-uniform etching.

[0096] In some embodiments, to facilitate opening and closing of the cover 150 during machine maintenance, the side fastener 162 can be designed not to be fixed to the outer surface 150OS of the cover 150, but only to the outer surface 112OS of the body 112. For example, the fastener 162 is directly fixed to the body 112, and not directly fixed to the cover 150. Therefore, the fastener 162 does not affect the operation of the machine itself. In some embodiments, the fastener 162 may or may not contact the outer surface 150OS of the cover 150. In some embodiments, the fastener 164 can be directly fixed to the upper surface of the cover 150.

[0097] In some embodiments, a magnetic field shielding element 170 (e.g., located on the same side of the reaction chamber 110) is provided. Figure 1 The magnetic field shielding element 172 can be fixed by the fastener 160 (e.g. Figure 1 The fixing elements 162) are separated from each other and do not contact each other. Alternatively, in some other embodiments, the magnetic field shielding elements 170 (e.g., ...) located on the same side of the reaction chamber 110 are separated from each other. Figure 1 The magnetic field shielding element 172 may not be separated by the fixing member 160. In other words, in some other embodiments, the magnetic field shielding element 170 (e.g., located on the same side of the reaction chamber 110) may not be separated by the fixing member 160. Figure 1 The magnetic field shielding elements 172 can come into contact with each other.

[0098] In some embodiments, the substrate W may be a silicon wafer. In other embodiments, the substrate W may comprise other elemental semiconductor materials, compound semiconductor materials, alloy semiconductor materials, or other semiconductor wafers, as well as other suitable substrates. For example, compound semiconductor materials include, but are not limited to, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide. For example, alloy semiconductor materials include, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP.

[0099] In some embodiments, the dielectric plate 114 may be made of a material permeable to electromagnetic signals, such as quartz, ceramic, and / or dielectric materials. These electromagnetic signals may be visible light, infrared light, ultraviolet light, X-ray light, and / or other electromagnetic signals. The electromagnetic signals transmitted through the dielectric plate 114 can be used to monitor the process conditions of the enclosed space 110S, such as the presence of plasma, the type of process gas, and / or the presence of etched / deposited residual materials. The dielectric plate 114 may have a suitable shape, such as a round plate, a square plate, or other suitable shapes. In some embodiments, the dielectric plate 114 may be transparent. In some embodiments, the dielectric plate 114 may also be referred to as a dielectric window.

[0100] In some embodiments, coil 130 may be a planar multi-turn spiral coil, a non-planar multi-turn spiral coil, or a coil with other suitable shapes. In some embodiments, coil 130 may constitute a plasma antenna. In other embodiments, the plasma antenna may comprise multiple plates suitable for capacitively coupled plasma. In other embodiments, the plasma may be maintained via other plasma antennas, such as electron cyclotron resonance (ECR), parallel plates, helicons, helical resonators, or other plasma antennas. The plasma power supply ES may be, for example, a radio frequency (RF) power supply.

[0101] In some embodiments, the inductively coupled plasma device 100 may further include a ceramic support 180 for supporting the inner and outer coils of the coil 130. For example, the coil 130 may be secured to the ceramic support 180 by suitable means (e.g., screws). The ceramic support 180 may include suitable openings for the gas delivery device 140 to pass through. In some embodiments, the inductively coupled plasma device 100 may further include terminals 190 through which the coil 130 is connected to a plasma radio frequency power supply.

[0102] In some embodiments, the inductively coupled plasma apparatus 100 may further include a plasma baffle 116 to limit plasma around the substrate W and allow process gases and process byproducts to be conveyed via the plasma baffle 116 to the gas outlet 112GO for discharge. The plasma baffle 116 may be coated with an alternative chamber material evaluation (ACME) film, wherein the film may comprise an aluminum material, such as anodized aluminum, and the configuration of this film can reduce defects.

[0103] Figure 2 This is a perspective view of an inductively coupled plasma device 100 according to a partial embodiment of the present disclosure. In the embodiments of the present disclosure, the fixing member 160 can be disposed on the upper, lower, left, right, front and rear sides of the outer surface OS (including the outer surface 112OS of the body 112 and the outer surface 150OS of the cover 150), so that the magnetic field shielding element 170 can be disposed outside the reaction chamber 110 as needed.

[0104] For example, in some embodiments, the magnetic field shielding element 172 includes primary magnetic field shielding elements 172a-172d and secondary magnetic field shielding elements 172a'-172d' disposed on the four sides of the reaction chamber 110. The magnetic field shielding elements 172a-172d and the secondary magnetic field shielding elements 172a'-172d' can be separated from each other and can be independently and selectively disposed around the reaction chamber 110. In some embodiments, the shape and size of the primary magnetic field shielding elements 172a-172d and the secondary magnetic field shielding elements 172a'-172d' are designed to match the structure of other elements in the inductively coupled plasma device 100. For example, the size of the secondary magnetic field shielding elements 172a'-172d' may be smaller than the size of the magnetic field shielding elements 172a-172d.

[0105] In some embodiments, the magnetic field shielding element 170 may have multiple locking holes 170H, and the outer surface OS may have multiple corresponding locking holes OSH, for fixing the magnetic field shielding element 170 to the outer surface OS. The magnetic field shielding element 170 can be fixed to the outer surface OS by other fasteners (see reference). Figure 1 The magnetic field shielding element 170 is fixed to the outer surface OS by a fixing member 160. Alternatively, in other embodiments, the magnetic field shielding element 170 can be directly fixed to the magnetic field shielding element 170 without the need for other fixing members in between. Other details of this embodiment are generally as described above and will not be repeated here.

[0106] Figure 3 This is a perspective view of an inductively coupled plasma device 100 according to a partial embodiment of this disclosure. Figure 3 As shown, the fastener 160 can be fixed to the outer surface OS of the inductively coupled plasma device 100 by means of screw locking. For example, the fastener 160 may be provided with a plurality of locking holes 160H, so that the locking holes 170H of the magnetic field shielding element 170 can be locked to the locking holes OSH of the outer surface OS by means of screws through the locking holes 160H. In this way, the magnetic field shielding element 170 can also be fixed in the slot 160T of the fastener 160 by means of screw locking. Other details of this embodiment are generally as described above, and will not be repeated here.

[0107] Figure 4 This is a perspective view of an inductively coupled plasma device 100 according to a partial embodiment of this disclosure. In this embodiment, the body 112 (refer to...) Figure 1A housing 300 can be provided around the geomagnetic imaging coil. The housing 300 can be made of a metallic material that can block external magnetic fields. For example, the housing 300 can be made of a transition metal or other suitable material. In some embodiments, the housing 300 can be made of group IV to group 11 metals. In some embodiments, the housing 300 can be made of molybdenum (Mo), iron (Fe), nickel (Ni), their alloys, or combinations thereof. This further prevents the magnetic field generated by the geomagnetic imaging coil. In some embodiments, the body 112 (see reference 110S) is used to surround the enclosed space 110S. Figure 1 A wafer path can be created to facilitate wafer transfer. The housing 300 can also have a wafer path 300G, which is connected to the body 112 (see reference). Figure 1 The wafer channel is connected to facilitate wafer transfer. The magnetic field shielding element 170 can be disposed on the body 112 (see reference). Figure 1 ) and the two sides of the housing 300 where no wafer channel is provided. In some embodiments, the body 112 (refer to Figure 1 The magnetic field shielding element 170 and its fixing member 160 can be omitted on the side of the housing 300 where the wafer channel is not provided (see reference). Figure 1 Alternatively, in other embodiments, body 112 (see reference) Figure 1 The housing 300, on the side with the wafer channel, can be provided with a magnetic field shielding element 170 of matching dimensions and its fixing member 160 (see reference). Figure 1 Other details of this embodiment are largely as described above and will not be repeated here.

[0108] Figure 5 This is a flowchart of a method M for operating an inductively coupled plasma device according to a partial embodiment of this disclosure. Figures 6A to 6B This is a schematic diagram of the various stages of the method M for operating an inductively coupled plasma device according to a partial embodiment of this disclosure. This description is illustrative only and is not intended to further limit the scope of the following claims. Method M includes steps S1 to S8. It should be understood that additional steps may be added before, during, and after steps S1 to S8, and for another partial embodiment of the method, some of the steps mentioned below may be replaced or omitted. The order of steps / procedures may be changed.

[0109] First, refer to Figure 5 and Figure 6AThe method proceeds to step S1, where an inductively coupled plasma device 100 is provided, and a plurality of magnetic field shielding elements 170 are adjusted to a first position configuration. For example, the magnetic field shielding elements 170 are disposed on the four sides and the top and bottom sides of the reaction chamber 110. When the first position configuration is adopted, the number, shape, etc. of the magnetic field shielding elements 172a-172b, 172a'-172b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the top and bottom sides of the reaction chamber 110 can be predetermined. For example, taking the number as an example, the magnetic field shielding elements 172a-172b and 174 are 3, 2, 1, 4, and 1, respectively.

[0110] Next, refer to Figure 5 and Figure 6A The method proceeds to step S2, where, after adjusting the plurality of magnetic field shielding elements 170 to the first position, the first wafer is placed into the reaction chamber. Alternatively, in some other embodiments, the order of steps S1 and S2 may be interchanged, and is not limited to that shown in the figures. For example, the plurality of magnetic field shielding elements 170 may be adjusted to the first position after the first wafer has been placed into the reaction chamber.

[0111] Next, the method proceeds to step S3, whereby the inductively coupled plasma apparatus 100 is used to perform appropriate plasma processes on the wafer, such as plasma etching, plasma deposition, or plasma treatment. In this embodiment, this plasma process includes the use of a gas delivery unit 140 (see reference 140). Figure 1 ) Transporting process gas into a confined space 110S, and using coil 130 (reference) Figure 1 Energy is transferred to a confined space for 110 seconds, thereby increasing the energy of the process gas to generate and / or maintain plasma. In some embodiments, this plasma process can be anisotropic or isotropic.

[0112] Next, refer to Figure 5 and Figure 6A The method proceeds to step S4, where after performing one plasma process on the wafer, the wafer can be removed from the reaction chamber and the next wafer can be placed in the sealed space 110S of the reaction chamber 110 to perform the same plasma process on the next wafer.

[0113] After performing these plasma processes on multiple wafers (e.g., multiple wafers in the same batch), refer to Figure 5 and Figure 6BThe method proceeds to step S5, adjusting the magnetic field shielding element 170 to the second position configuration. For example, the number of magnetic field shielding elements 170 located on any of the four sides and the top and bottom sides of the reaction chamber 110 can be increased, for example, by adding magnetic field shielding elements 170 on any of the four sides and the top and bottom sides of the reaction chamber 110. Alternatively, in some examples, the number of magnetic field shielding elements 170 located on any of the four sides and the top and bottom sides of the reaction chamber 110 can be reduced, for example, by removing magnetic field shielding elements 170 on any of the four sides and the top and bottom sides of the reaction chamber 110. When the second position configuration is adopted, the number, shape, etc. of the magnetic field shielding elements 172a-172b, 172a'-172b' on the four sides of the reaction chamber 110 and the magnetic field shielding elements 174 on the top and bottom sides of the reaction chamber 110 can be predetermined. For example, taking the number as an example, the magnetic field shielding elements 172a-172b and 174 are 2, 4, 1, 5, and 1, respectively.

[0114] In some embodiments, when adjusting the magnetic field shielding element 170 to the second position, the magnetic field shielding element 170 disposed on either side of the reaction chamber 110 can be removed. Alternatively, in other embodiments, the magnetic field shielding element 170 disposed on either side of the reaction chamber 110 can be moved to the other side. Alternatively, in some embodiments, the number of magnetic field shielding elements 170 disposed on either side of the reaction chamber 110 can be increased.

[0115] Next, refer to Figure 5 and Figure 6B The method proceeds to step S6, where, after adjusting the plurality of magnetic field shielding elements 170 to the second position configuration, the second wafer is placed into the reaction chamber. Alternatively, in some other embodiments, the order of steps S5 and S6 may be interchanged, and is not limited to what is shown in the figures. For example, the plurality of magnetic field shielding elements 170 may be adjusted to the second position configuration after the second wafer is placed into the reaction chamber.

[0116] Next, the method proceeds to step S7, whereby the inductively coupled plasma device 100 is operated to perform an appropriate plasma process on the second wafer, such as a plasma etching process, a plasma deposition process, or a plasma treatment process. In this embodiment, this plasma process includes the use of a gas delivery device 140 (see reference 140). Figure 1 ) Transporting process gas into a confined space 110S, and using coil 130 (reference) Figure 1 Energy is transferred to a confined space for 110 seconds, thereby increasing the energy of the process gas to generate and / or maintain plasma. In some embodiments, this plasma process can be anisotropic or isotropic.

[0117] Next, refer to Figure 5 and Figure 6BThe method proceeds to step S8, where after completing one plasma process on the wafer, the wafer can be removed from the reaction chamber and the next wafer can be placed in the sealed space 110S of the reaction chamber 110 to perform the same plasma process on the next wafer (e.g., multiple wafers in the same batch).

[0118] In some embodiments disclosed herein, the operator can select an appropriate configuration of the magnetic field shielding element 170 as needed for the plasma process. For example, the configuration of the magnetic field shielding element 170 in this second plasma process differs from its configuration in the first plasma process. Figure 5 Although the first plasma process and the second plasma process are performed on the first wafer and the second wafer respectively in this embodiment, this should not be construed as limiting the scope of this disclosure. In other embodiments, the first plasma process and the second plasma process may be performed on the same wafer.

[0119] Figure 7 This is a flowchart of a method N for operating an inductively coupled plasma device according to a partial embodiment of this disclosure. Figures 6A to 6B This is a schematic diagram of the various stages of the method M for operating an inductively coupled plasma device according to a partial embodiment of this disclosure. This description is illustrative only and is not intended to further limit the scope of the following claims. Method N includes steps P1 to P6. It should be understood that additional steps may be added before, during, and after steps P1 to P6, and for another partial embodiment of the method, some of the steps mentioned below may be replaced or omitted. The order of steps / procedures may be changed.

[0120] Reference Figure 7 and Figure 6A The method proceeds to step P1, in which the first wafer is placed into the reaction chamber of the inductively coupled plasma device 100.

[0121] Next, the method proceeds to step P2, where multiple magnetic field shielding elements 170 are adjusted to a first position configuration. For example, the magnetic field shielding elements 170 are positioned on the four sides and the top and bottom sides of the reaction chamber 110. With the first position configuration, the number, shape, etc., of the magnetic field shielding elements 172a-172b, 172a'-172b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the top and bottom sides of the reaction chamber 110 can be predetermined. For example, taking the number as an example, the magnetic field shielding elements 172a-172b and 174 are 3, 2, 1, 4, and 1, respectively. The order of steps P1 and P2 can be interchanged and is not limited to what is shown in the figure. For example, the multiple magnetic field shielding elements 170 can be adjusted to the first position configuration before or after the first wafer is placed into the reaction chamber.

[0122] The method proceeds to step P3, whereby the inductively coupled plasma device 100 is operated to perform appropriate plasma processes on the wafer, such as plasma etching, plasma deposition, or plasma treatment.

[0123] Next, refer to Figure 7 and Figure 6B The method proceeds to step P4, where multiple magnetic field shielding elements 170 are adjusted to a second position configuration. For example, the number of magnetic field shielding elements 170 located on any of the four sides and the top and bottom sides of the reaction chamber 110 can be increased, such as by adding magnetic field shielding elements 170 to any of the four sides and the top and bottom sides of the reaction chamber 110. Alternatively, in some examples, the number of magnetic field shielding elements 170 located on any of the four sides and the top and bottom sides of the reaction chamber 110 can be reduced, such as by removing any of the magnetic field shielding elements 170 from the four sides and the top and bottom sides of the reaction chamber 110. When the second position configuration is adopted, the number, shape, etc., of the magnetic field shielding elements 172a-172b, 172a'-172b' on the four sides of the reaction chamber 110, and the magnetic field shielding elements 174 on the top and bottom sides of the reaction chamber 110 can be predetermined. For example, regarding the number, the magnetic field shielding elements 172a-172b and 174 are 2, 4, 1, 5, and 1, respectively.

[0124] Next, the method proceeds to step P5, whereby the inductively coupled plasma device 100 is operated to perform appropriate plasma processes on the wafer, such as plasma etching, plasma deposition, or plasma treatment processes.

[0125] Figures 8A to 8J This is a schematic diagram illustrating various stages of the manufacturing process of a semiconductor device according to some embodiments of this disclosure. This description is illustrative only and is not intended to further limit the scope of the following claims. It should be understood that... Figures 8A to 8J Additional steps may be added before, during, and after the steps described herein, and for another implementation of the method, some of the steps mentioned below may be replaced or omitted. The order of steps / procedures may be changed.

[0126] refer to Figure 8A A rigid mask layer 920, a bottom anti-reflection coating (BARC) 930, and a patterned photoresist layer 940 are formed on a semiconductor substrate 910. In some embodiments, the patterned photoresist layer 940 may comprise a suitable organic material. In some embodiments, the patterned photoresist layer 940 is formed by coating the photoresist layer on the bottom anti-reflection layer 930 and performing a photolithography process (e.g., exposure and development) on the photoresist layer.

[0127] In some embodiments, the semiconductor substrate 910 may comprise a suitable semiconductor material, such as silicon (Si), germanium (Ge), silicon carbide (SiC), silicon-germanium (SiGe), or a combination thereof. In some embodiments, the semiconductor substrate 910 is, for example, bulk silicon. In some embodiments, the semiconductor substrate 910 may be a silicon-on-insulator (SOI) substrate, a multilayer substrate, a gradient substrate, or a hybrid orientation substrate.

[0128] In some embodiments, the rigid mask layer 920 may comprise multiple layers of dielectric material, which may be a three-layer structure of silicon carbide-silicon oxide-silicon carbide. Alternatively, in some embodiments, the rigid mask layer 920 may comprise a silicon carbide layer. In some embodiments, the bottom anti-reflective layer 930 may comprise a suitable organic or inorganic dielectric material, such as silicon carbide (SiC). During exposure of the photoresist layer, the bottom anti-reflective layer 930 can reduce reflection interference from underlying features.

[0129] refer to Figure 8B Using the aforementioned inductively coupled plasma apparatus 100, a plasma etching process is performed to remove portions of the bottom anti-reflective layer 930 not covered by the patterned photoresist layer 940, thereby forming a bottom anti-reflective layer 932. Specifically, a semiconductor substrate 910 is placed on a wafer pedestal (see reference). Figure 1 On the wafer substrate 120, a gas Ga gas is introduced by a control gas delivery device 140 to generate plasma Pa, thereby etching the bottom anti-reflection layer 930 (see reference 120) that is not covered by the patterned photoresist layer 940. Figure 8A This part is part of the plasma etching process, where the magnetic field shielding element 170 (refer to the aforementioned) is used. Figures 1-4 or Figure 6A as well as Figure 6B A 170LA can be configured in one location.

[0130] refer to Figure 8C The hard mask layer 920 is etched to form a hard mask 922. Specifically, the inductively coupled plasma device 100 introduces a gas Gb to generate plasma Pb to etch the hard mask layer 920 that is not covered by the bottom anti-reflective layer 932 (see reference). Figure 8B This part is part of the plasma etching process, where the magnetic field shielding element 170 (refer to the aforementioned) is used. Figures 1-4 or Figure 6A as well as Figure 6B A 170LB configuration can be used in one location.

[0131] refer to Figure 8DA rigid mask 922 is used as an etching mask to etch the semiconductor substrate 910, forming trenches 910R on the semiconductor substrate 910. Specifically, an inductively coupled plasma device 100 introduces a gas Gc to generate plasma Pc to etch the portions of the semiconductor substrate 910 not covered by the rigid mask 922. During this plasma etching process, a magnetic field shielding element 170 (refer to the aforementioned...) Figures 1-4 or Figure 6A as well as Figure 6B A 170LC can be configured in one location.

[0132] refer to Figure 8E Dielectric material is filled into the trench 910R to form a shallow trench isolation region 950. The shallow trench isolation region 950 can be used to define the active region 912 of the semiconductor substrate 910.

[0133] refer to Figure 8F A gate dielectric layer 960, a gate electrode layer 970, a hard mask layer 980, a bottom anti-reflection coating (BARC) 990, and a patterned photoresist layer 1000 are formed on the shallow trench isolation region 950 and the active region 912. In some embodiments, the patterned photoresist layer 1000 is formed by coating the photoresist layer on the bottom anti-reflection layer 990 and performing a photolithography process (e.g., exposure and development) on the photoresist layer.

[0134] refer to Figure 8G The bottom anti-reflective layer 990 is etched to form the bottom anti-reflective layer 992. Specifically, the inductively coupled plasma device 100 introduces a gas Ga' to generate plasma Pa', thereby etching the bottom anti-reflective layer 990 that is not covered by the patterned photoresist layer 1000 (see reference). Figure 8F This part is part of the plasma etching process, where the magnetic field shielding element 170 (refer to the aforementioned) is used. Figures 1-4 or Figure 6A as well as Figure 6B A 170LD can be configured in one position.

[0135] refer to Figure 8H The hard mask layer 980 is etched to form a hard mask 982. Specifically, the inductively coupled plasma device 100 introduces a gas Gb' to generate plasma Pb', which etches the hard mask layer 980 not covered by the bottom anti-reflective layer 992 (see reference). Figure 8G This part is part of the plasma etching process, where the magnetic field shielding element 170 (refer to the aforementioned) is used. Figures 1-4 or Figure 6A as well as Figure 6B A 170LE can be configured in one location.

[0136] refer to Figure 8IUsing a hard mask 982 as an etching mask, the gate electrode layer 970 and the gate dielectric layer 960 are etched (see reference). Figure 8H The gate electrode 972 and gate dielectric 962 are formed respectively. Specifically, the inductively coupled plasma device 100 introduces a gas Gc' to generate plasma Pc', which etches the gate electrode layer 970 and gate dielectric layer 960 not covered by the hard mask 982 (see reference). Figure 8H This part is part of the plasma etching process, where the magnetic field shielding element 170 (refer to the aforementioned) is used. Figures 1-4 or Figure 6A as well as Figure 6B A 170LF can be configured in one location.

[0137] In some embodiments, reference is made to Figures 8B to 8I At least two of the position configurations 170LA to 170LF are different. In some embodiments, position configurations 170LA to 170LF may be partially identical depending on the similarity of the etched patterns. For example, position configurations 170LA to 170LC may be substantially identical, while position configurations 170LD to 170LF may be substantially identical, wherein position configurations 170LA to 170LC are different from position configurations 170LD to 170LF. In some embodiments, position configurations 170LA to 170LF may be partially identical depending on the type of target material being etched. For example, position configurations 170LA and 170LD used for etching the bottom anti-reflective layer may be substantially identical, position configurations 170LB and 170LE used for the rigid mask layer may be substantially identical, and position configurations 170LC and 170LF used for the silicon substrate or polysilicon may be substantially identical, wherein each of these position configurations 170LA and 170LD, 170LB and 170LE, and 170LC and 170LF is different. Alternatively, in some other embodiments, the position configurations 170LA to 170LF are different.

[0138] In some embodiments, the gases Ga, Gb, and Gc may be different depending on the material being etched, resulting in different plasmas Pa, Pb, and Pc. Similarly, the gases Ga', Gb', and Gc' may be different depending on the material being etched, resulting in different plasmas Pa', Pb', and Pc'. In some embodiments, the same gas may be used for Ga and Ga', resulting in substantially the same composition for plasmas Pa and Pa'. In some embodiments, the same gas may be used for Gb and Gb', resulting in substantially the same composition for plasmas Pb and Pb'. In some embodiments, the same gas may be used for Gc and Gc', resulting in substantially the same composition for plasmas Pc and Pc'. Alternatively, in other embodiments, the gases Ga, Gb, Gc, Ga', Gb', and Gc' may each be different.

[0139] refer to Figure 8J A source / drain region 1100 is formed in / on the active region 912, in the portion not covered by the gate electrode 972 and the gate dielectric 962. For example, the source / drain region 1100 can be formed by n-type or p-type doping. Alternatively, in some embodiments, the source / drain region 1100 can be formed by epitaxial growth. Figures 8A to 8J The steps can be repeated on multiple substrates.

[0140] Figure 9 This is a schematic diagram of a semiconductor process equipment 200 according to a partial embodiment of the present disclosure. The semiconductor process equipment 200 may be a cluster tool including a load port LP, an Equipment Front-End Module (EFCM) TC, a load-lock chamber LC, a buffer chamber BC, and a process reaction chamber (e.g., an inductively coupled plasma device 100).

[0141] The loading port LP is used to carry the wafer transfer box WP. The wafer transfer box WP can carry multiple wafers and be transported by a suitable automated handling system, such as an overhead hoist transfer (OHT) system.

[0142] The device front-end module TC connects the loading port LP and the load-locking chamber LC. The load-locking chamber LC can be used to load or unload wafers. For example, the load-locking chamber LC includes a wafer inlet chamber WI and a wafer outlet chamber WO. The device front-end module TC may be equipped with a robotic arm A1 to remove wafers from the wafer transfer box WP carried by the loading port LP and transfer them to the wafer inlet chamber WI of the load-locking chamber LC, and also to remove wafers from the wafer outlet chamber WO of the load-locking chamber LC and transfer them to the wafer transfer box WP carried by the loading port LP. A buffer chamber BC connects the load-locking chamber LC and the process reaction chamber (e.g., inductively coupled plasma device 100). The buffer chamber BC may be equipped with a robotic arm A2 to transfer wafers between the load-locking chamber LC and multiple process reaction chambers (e.g., inductively coupled plasma device 100). In some embodiments, the configuration of the inductively coupled plasma device 100 is generally as described above. The number of inductively coupled plasma devices 100 is only illustrative and should not be considered a limitation.

[0143] Based on the above discussion, it is evident that this disclosure offers several advantages. However, it should be understood that other embodiments may provide additional advantages, and not all advantages need to be disclosed herein, nor are all embodiments required to have specific advantages. One advantage of this invention is that by installing fixtures around the reaction chamber, the operator can easily adjust the distribution of the magnetic field shielding elements around the reaction chamber according to the desired plasma process, thereby effectively isolating the geomagnetic field and improving plasma control, achieving good control over plasma etching, such as achieving uniform or non-uniform etching. The magnetic field shielding elements in the embodiments of this disclosure can also be fixed by other means, and are not limited to the fixtures shown in the figures.

[0144] This disclosure provides a method for operating an inductively coupled plasma device. The method includes: disposing a first magnetic field shielding element adjacent to a first side of a reaction chamber; performing a first plasma process while the first magnetic field shielding element is disposed adjacent to the first side of the reaction chamber; removing the first magnetic field shielding element from the first side of the reaction chamber after the first plasma process is completed; and performing a second plasma process after removing the first magnetic field shielding element from the first side of the reaction chamber.

[0145] In some embodiments, the method further includes, after performing the first plasma process and before performing the second plasma process, placing a second magnetic field shielding element adjacent to a second side of the reaction chamber.

[0146] In some embodiments, the method further includes disposing a first substrate in the reaction chamber, wherein the first plasma process is performed on the first substrate in the reaction chamber, and the second plasma process is performed on the first substrate in the reaction chamber.

[0147] In some embodiments, the method further includes placing a first substrate in the reaction chamber, wherein the first plasma process is performed on the first substrate in the reaction chamber; removing the first substrate from the reaction chamber; and placing a second substrate in the reaction chamber, wherein the second plasma process is performed on the second substrate in the reaction chamber.

[0148] This disclosure provides a method for operating an inductively coupled plasma device, comprising: disposing a first magnetic field shielding element adjacent to a first side of a reaction chamber; performing a first plasma process while the first magnetic field shielding element is disposed adjacent to the first side of the reaction chamber; after the first plasma process is completed, disposing a second magnetic field shielding element adjacent to the first side of the reaction chamber; and performing a second plasma process while both the first and second magnetic field shielding elements are disposed adjacent to the first side of the reaction chamber.

[0149] In some embodiments, the first plasma process includes introducing a first gas into the reaction chamber, and the second plasma process includes introducing a second gas into the reaction chamber, wherein the second gas is different from the first gas.

[0150] In some embodiments, placing the first magnetic field shielding element adjacent to the first side of the reaction chamber includes: locking the first magnetic field shielding element to the first side of the reaction chamber.

[0151] In some embodiments, the second magnetic field shielding element is disposed adjacent to the first side of the reaction chamber such that the second magnetic field shielding element contacts the first magnetic field shielding element.

[0152] This disclosure provides an inductively coupled plasma device. The inductively coupled plasma device includes a reaction chamber, a wafer substrate, a first magnetic field shielding element, and a second magnetic field shielding element. The reaction chamber has a body and a dielectric substrate, wherein the body and the dielectric substrate define a space. The wafer substrate is disposed in the reaction chamber to support a substrate. The first magnetic field shielding element is detachably disposed on the outer surface of the body. The second magnetic field shielding element is detachably disposed on the outer surface of the body.

[0153] In some embodiments, an upper surface of the first magnetic field shielding element is higher than an upper surface of the dielectric substrate, and a lower surface of the first magnetic field shielding element is lower than a lower surface of the wafer substrate.

[0154] The foregoing outlines the features of various embodiments, and those skilled in the art will better understand the various aspects of this disclosure. Those skilled in the art should understand that this disclosure can serve as the basis for designing or modifying other processes or structures to achieve the same objectives and / or benefits mentioned in the embodiments. Those skilled in the art should also understand that these equivalent structures do not exceed the spirit and scope of this disclosure, and various changes, substitutions, and transformations can be made; here, the spirit and scope of this disclosure encompasses these changes, substitutions, and transformations.

Claims

1. A method for operating an inductively coupled plasma device, characterized in that, Include: A first number of at least one first magnetic field shielding element is disposed adjacent to a first outer side of a reaction chamber, wherein the upper surface of the first magnetic field shielding element is higher than the upper surface of a coil in the reaction chamber, and the lower surface of the first magnetic field shielding element is lower than the lower surface of an electrode in a wafer substrate in the reaction chamber. A second number of at least one second magnetic field shielding elements are disposed adjacent to a second outer side of the reaction chamber, wherein the first number is greater than or less than the second number; When the first number of at least one first magnetic field shielding element is disposed adjacent to the first outer side of the reaction chamber and the second number of at least one second magnetic field shielding element is disposed adjacent to the second outer side of the reaction chamber, a first plasma process is performed through the coil. After the first plasma process is completed, the first number of at least one first magnetic field shielding element is removed or reduced from the first outside of the reaction chamber. as well as After the first number of at least one first magnetic field shielding element is removed or reduced from the first outside of the reaction chamber, a second plasma process is performed through the coil.

2. The method according to claim 1, characterized in that, Also includes: After the first plasma process and before the second plasma process, the number of the at least one second magnetic field shielding element is increased or decreased.

3. The method according to claim 1, characterized in that, Also includes: A first substrate is disposed in the reaction chamber, wherein the first plasma process is performed on the first substrate in the reaction chamber, and the second plasma process is performed on the first substrate in the reaction chamber.

4. The method according to claim 1, characterized in that, Also includes: A first substrate is disposed in the reaction chamber, wherein the first plasma process is performed on the first substrate in the reaction chamber; Remove the first substrate from the reaction chamber; and A second substrate is disposed in the reaction chamber, wherein the second plasma process is performed on the second substrate in the reaction chamber.

5. A method for operating an inductively coupled plasma device, characterized in that, Include: A first number of at least one first magnetic field shielding element is disposed adjacent to a first outer side of a reaction chamber; A second number of at least one second magnetic field shielding elements are disposed adjacent to a second outer side of the reaction chamber, wherein the first number is greater than or less than the second number; and A first plasma process is performed when the first number of at least one first magnetic field shielding element is disposed adjacent to the first outer side of the reaction chamber and the second number of at least one second magnetic field shielding element is disposed adjacent to the second outer side of the reaction chamber.

6. The method according to claim 5, characterized in that, in: After the first plasma process is completed, the first number of at least one first magnetic field shielding element is adjusted to a third number of at least one first magnetic field shielding element. After the first plasma process is completed, the second number of at least one second magnetic field shielding element is adjusted to a fourth number of at least one second magnetic field shielding element; and When the third number of at least one first magnetic field shielding element is disposed adjacent to the first outer side of the reaction chamber and the fourth number of at least one second magnetic field shielding element is disposed adjacent to the second outer side of the reaction chamber, a second plasma process is performed. The first plasma process includes introducing a first gas into the reaction chamber, and the second plasma process includes introducing a second gas into the reaction chamber, wherein the second gas is different from the first gas.

7. The method according to claim 5, characterized in that, The placement of the first number of at least one first magnetic field shielding element adjacent to the first outer side of the reaction chamber includes: The first number of at least one first magnetic field shielding element is locked to the first outer side of the reaction chamber.

8. The method according to claim 5, characterized in that, The placement of the first number of at least one first magnetic field shielding element adjacent to the first outer side of the reaction chamber includes making the first magnetic field shielding elements in contact with each other.

9. An inductively coupled plasma device, characterized in that, Include: A reaction chamber having a body and a dielectric plate, wherein the body and the dielectric plate define a space; A coil is disposed on the dielectric plate. A cover is located on the reaction chamber and shields the dielectric plate and the coil; A wafer pedestal is disposed in the reaction chamber; At least one first magnetic field shielding element is disposed on a first outer side of the body; At least one second magnetic field shielding element is separated from the at least one first magnetic field shielding element and is disposed on a second outer side of the body, wherein the number of the at least one first magnetic field shielding element is greater than or less than the number of the at least one second magnetic field shielding element; A fastener, disposed on the cover and having a slot; and A third magnetic field shielding element is disposed on the cover and located in the slot of the fixing member.

10. The inductively coupled plasma device according to claim 9, characterized in that, The upper surface of the at least one first magnetic field shielding element is higher than the upper surface of the dielectric plate and lower than the upper surface of the cover, and the lower surface of the at least one first magnetic field shielding element is lower than the lower surface of the wafer base.

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