A multi-partition column-selective VCSEL array laser module testing device and method

Abstract

A test device and method for a multi-zone column-selective VCSEL array laser module, belonging to the technical field of optoelectronic device testing, comprising a bottom plate, on which an electric guide rail is provided, on which a module bracket is provided, a laser module is detachably provided on the module bracket, and a detection member for pressing and testing the laser module is arranged to be lifted above the module bracket; an optical output window is opened at the position on the module bracket for installing the laser module, and an integrating sphere and an optical component are respectively arranged on both sides of the module bracket. The integrating sphere and the optical component are both arranged on the electric guide rail, and the light input ends of the integrating sphere and the optical component are both located below the optical output window; the detection member includes a driving board, inside the board body of the driving board, a plurality of driving circuits are provided, and on the board body of the driving board, a cathode probe is provided, and a plurality of anode probes are arranged in an array on both sides of the cathode probe. The cathode probe and the plurality of anode probes are both electrically connected to the driving circuits, and two anode probes are correspondingly electrically connected to one driving circuit through the cathode probe.

Description

Technical Field

[0001] The present invention belongs to the technical field of optoelectronic device testing, and particularly relates to a testing device and method for a multi-zone column-gated VCSEL array laser module. Background Technique

[0002] Multi-zone column-gated VCSEL array laser modules are increasingly widely used in the field of all-solid-state lidar. They can replace traditional MEMS, galvanometer, and rotating polyhedron prism scanning to achieve all-solid-state scanning, which is of great significance for improving the overall reliability of lidar. However, the driving test technology for multi-zone column-gated VCSEL array laser modules is not yet mature. The driving methods currently used in the testing of multi-zone column-gated VCSEL array laser modules are mainly DC continuous testing, or single-channel driving circuit single-zone testing and single-channel driving circuit full-region testing methods.

[0003] In DC testing, due to the relatively large current, high heat generation, and prominent heat dissipation problems, it is difficult for the laser to operate at a very high power; the single-zone testing with a single-channel driving is relatively complex. After testing one zone of the VCSEL array, the bonding wire leads of the tested zone need to be manually cut under a microscope, and then other zones are selected for bonding wire leads to conduct the test again; for the full-region testing with a single-channel driving circuit, because the VCSEL chip size is large, the pads are relatively large, the driving electrical loop is long, and the parasitic parameters are large, resulting in relatively serious secondary oscillation and pulse width broadening problems. At the same time, due to the long loop, there will also be a delay problem for different zones, forming multi-pulse oscillation, and the current of the single-channel driving in the case of narrow pulses is relatively low, which is far from meeting the driving current requirements of the VCSEL array that requires hundreds or even thousands of amperes. Summary of the Invention

[0004] The purpose of the present invention is to provide a testing device and method for a multi-zone column-gated VCSEL array laser module to solve the problems mentioned in the above background technique.

[0005] To achieve the above purpose, the present invention provides the following technical solutions:

[0006] A test device for a multi-zone column-selective VCSEL array laser module, comprising a bottom plate, on which an electric guide rail is provided, on which a module bracket is provided, the module bracket is detachably provided with a laser module, and above the module bracket, a detection member for pressing and testing the laser module is arranged in a lifting manner; a light-emitting window is opened at the position on the module bracket for installing the laser module, and an integrating sphere and an optical component are respectively arranged on both sides of the module bracket, the integrating sphere and the optical component are both arranged on the electric guide rail, and the light-incident ends of the integrating sphere and the optical component are both located below the light-emitting window; wherein, the detection member includes a driving board, a plurality of driving circuits are arranged inside the board body of the driving board, and a cathode probe is arranged on the board body of the driving board, and a plurality of anode probes are arranged in an array on both sides of the cathode probe, the cathode probe and the plurality of anode probes are both electrically connected to the driving circuit, and the plurality of anode probes arranged on both sides of the cathode probe are divided into several groups of partition probes in a one-to-one correspondence manner, and the several groups of partition probes are respectively electrically connected to the driving circuit.

[0007] Compared with the prior art, the technical solution has the following effects:

[0008] ① It can simultaneously light up each zone of the large-area array VCSEL module / naked chip, and the test is more convenient, fast and accurate, eliminating the trouble of individually lighting up each zone and then centrally processing the data, improving the efficiency and the accuracy of the data;

[0009] ② The driving of each zone can achieve the output of nanosecond-level and hundreds of amperes of peak current, which can fully drive the large-area array VCSEL module / naked chip, and the driving ability is sufficient;

[0010] ③ Compared with single-channel full-area driving, through multi-channel independently selectable driving circuits, the problems of large parasitic parameters caused by too large pads due to single-channel driving, resulting in waveform oscillation and pulse-width broadening can be solved. Moreover, the multi-channel zone selection and gating have a high peak current and sufficient driving ability, and can fully display the performance of the tested device;

[0011] ④ Compared with continuous and quasi-continuous modes, the heat generation is small, effectively preventing the device from being burned out due to overheating.

[0012] Preferably, the laser module includes a housing base, a welding cavity is formed by inward depression on the lower end surface of the housing base, and a cathode pad is arranged on the upper end surface of the housing base. A plurality of pressing and testing cavities are formed by inward depression on the upper end surface of the housing base on both sides of the cathode pad. An anode pad is arranged in each of the plurality of pressing and testing cavities, and a gold bonding wire is fixed on the anode pad. A large-area array chip is bonded to the cathode pad inside the welding cavity of the housing base by silver paste die bonding, and the large-area array chip is electrically connected to the anode pad by gold wire bonding.

[0013] Preferably, the area array chip includes a plurality of sub-units, which are sequentially spliced, and sub-unit pads are provided at both ends of the plurality of sub-units, and the sub-unit pads are fixedly connected to the bonding wires.

[0014] Preferably, the optical component includes a camera and a white board fixedly arranged on the shooting side of the camera, and the camera and the white board are arranged at intervals.

[0015] Preferably, the drive circuit includes a plurality of groups of power circuits, the plurality of groups of power circuits are respectively connected to corresponding anode probes, and the plurality of groups of power circuits are all electrically connected to the cathode probe.

[0016] Preferably, the power circuit includes a chip U104. The first pin of the chip U104 is connected to the first end of a resistor R399 and is connected to a power supply of 5V. The second end of the resistor R399 is connected to the first end of a capacitor C530. The second end of the capacitor C530 is connected to the second and eighth pins of the chip U104 and is grounded. The eleventh and sixteenth pins of the chip U104 are connected to each other and are connected to an internal power supply of 5V. The sixteenth pin of the chip U104 is connected to the first ends of a capacitor C589, a capacitor C590, a resistor R356, and an inductor L108. The second end of the inductor L108 is connected to the first ends of a capacitor C438 and a capacitor C440 and is connected to the fourth pin of a comparator U94. The second end of the capacitor C438 is connected to the second end of the capacitor C440 and is connected to the sixth pin of the comparator U94. The second ends of the capacitor C589 and the capacitor C590 are connected to each other and are connected to the fifteenth pin of the chip U104. The second end of the resistor R356 is connected to the first end of a resistor R357, the first end of a battery C177, the first end of a capacitor C184, and the first end of an inductor L109 and is connected to an internal power supply of 2.5V. The second end of the inductor L109 is connected to the first end of a capacitor C439. The second ends of the capacitor C439, the capacitor C184, the capacitor C177, and the resistor R357 are connected to each other and are connected to the fifteenth pin of the chip U104. The second end of the inductor L109 is connected to the first pin of the comparator U94. The third pin of the comparator U94 is connected to a capacitor C441 and the first end of a resistor R256. The second end of the resistor R256 is connected to the first end of a resistor R355 and is connected to the fourteenth pin of the chip U104. The second end of the resistor R355 is connected to the second end of the capacitor C441 and is connected to the second pin of the comparator U94. The second pin of the comparator U94 is connected to the ninth pin of the chip U104 and the second end of a capacitor C442. The fifth pin of the comparator U94 is connected to the first ends of a resistor R254, a resistor R253, a resistor R258, and a resistor R257. The second ends of the resistor R253 and the resistor R254 and the first end of a capacitor C444 are connected to the first pin of a chip U8. The second ends of the resistor R258 and the resistor R257 and the first end of a capacitor C442 are connected to the third pin of the chip U8. The second end of the capacitor C442 is connected to the ninth pin of the chip U104. The second end of the capacitor C444 is connected to the first end of a capacitor C443. The second end of the capacitor C443 is connected to the first end of an inductor L110. The second end of the capacitor C443 is connected to the fourth pin of the chip U8. The second end of the inductor L110 is connected to an internal power supply of 2.5V, and the first end of inductor L110 is connected to the second pin of chip U8. The eighth pin of chip U8 is connected to the first end of inductor L4 and the first end of capacitor C12. The second end of inductor L4 is connected to the built-in power supply of 5V. The seventh pin, sixth pin, and ninth pin of chip U8 are respectively connected to the first pin, second pin, and third pin of chip U7. The second end of inductor L4 is connected to the first end of inductor L5, the first end of capacitor C15, and the first end of capacitor C11, and is connected to the A1 pin of chip U9. The second end of inductor L5 is connected to the first end of capacitor C16 and is connected to the sixth pin of chip U7. The second end of capacitor C16 is connected to the second end of capacitor C15 and the second end of capacitor C11, and is connected to the B1 pin of chip U9. The fourth pin of chip U7 is connected to the C1 pin of chip U9. The A2 pin of chip U9 is connected to the first pin of GaN MOS transistor U11. And the B2 pin of chip U9 is connected to the first end of resistor R9. The second end of resistor R9 is connected to the first end of resistor R358. The C2 pin of chip U9 is connected to the first end of resistor R11. The second end of resistor R11 is floating and is connected to the second pin, fourth pin, sixth pin, eighth pin, and tenth pin of GaN MOS transistor U11. And the second pin of GaN MOS transistor U11 is connected to the positive electrode of diode D1. The negative electrode of diode D1 is connected to the second end of resistor R11. And the positive electrode of diode D1 is connected with a positive electrode pin for electrically connecting with the anode probe 52, and the negative electrode of diode D1 is connected with a negative electrode pin for electrically connecting with the cathode probe 51. The eleventh pin, ninth pin, seventh pin, fifth pin, and third pin of GaN MOS transistor U11 are connected.

[0017] The present invention also discloses a test method for a test device of a multi-zone column-selective VCSEL array laser module, including the following specific steps:

[0018] S1. Bond the array chip to the cathode pad of the housing base with silver paste, and electrically connect the bonding wire and the anode pad to obtain an assembly;

[0019] S2. Place the assembly above the light-emitting window on the module bracket, and then insert several anode probes of the detection component into the corresponding pressure test cavities. At this time, the cathode probe of the detection component is connected to the cathode pad;

[0020] S3. One anode probe on each side of the cathode probe is taken as a group, and each group is connected with a drive circuit. During detection, the drive circuit of the required group is driven separately for detection;

[0021] S4. Measure the optical power of the laser by using an integrating sphere and a spectrometer, and measure the near-field spot, far-field divergence angle, and light intensity distribution characteristics of the laser module through optical components. Description of the Drawings

[0022] Figure 1 is a schematic diagram of the overall structure of the present invention;

[0023] Figure 2 is a schematic diagram of the structure of the detection component in the present invention;

[0024] Figure 3 is a schematic diagram of the structure of the laser module in the present invention;

[0025] Figure 4 is a schematic diagram of the structure of the area array chip in the present invention;

[0026] Figure 5 is Figure 1 the enlarged schematic diagram of the "A" position in;

[0027] Figure 6 is the circuit schematic diagram of the drive circuit in the present invention. Detailed Embodiments

[0028] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.

[0029] Embodiment:

[0030] Such as Figures 1-5 shown, a test device for a multi-zone column-selective VCSEL area array laser module includes a bottom plate 1. An electric guide rail 2 is provided on the bottom plate 1. A module bracket 4 is provided on the electric guide rail 2. A laser module 6 is detachably provided on the module bracket 4. And a detection component 5 for pressing and measuring the laser module 6 is arranged above the module bracket 4 in a lifting manner. Among them, a light output window 40 is opened at the position on the module bracket 4 for installing the laser module 6. And an integrating sphere 3 and optical components are respectively arranged on both sides of the module bracket 4. The integrating sphere 3 and the optical components are both arranged on the electric guide rail 2. And the light input ends of the integrating sphere 3 and the optical components are both located below the light output window 40.

[0031] In this embodiment, the detection component 5 includes a driving board 50. A driving circuit is provided inside the board body of the driving board 50, and a cathode probe 51 is provided on the board body of the driving board 50. A plurality of anode probes 52 are arranged in an array on both sides of the cathode probe 51. The cathode probe 51 and the plurality of anode probes 52 are both electrically connected to the driving circuit. It is worth mentioning that the plurality of anode probes 52 arranged on both sides of the cathode probe 51 are divided into several groups of partition probes in a one-to-one correspondence manner, and the several groups of partition probes are respectively electrically connected to the driving circuit. Specifically, referring to Figure 6 it can be known that the driving circuit 1001 includes several groups of power circuits. The several groups of power circuits are respectively connected to the corresponding anode probes 52, and the several groups of power circuits are all electrically connected to the negative probe 50. Compared with single-channel full-region driving, through a multi-channel independently selectable gating driving circuit, the problems of large parasitic parameters caused by the large pad due to single-channel driving, resulting in waveform oscillation and pulse width broadening can be solved. Moreover, the multi-channel partition gating has a high peak current and sufficient driving ability, which can fully display the performance of the tested device. At the same time, adopting this partition control mode, compared with the continuous and quasi-continuous modes, it generates less heat and effectively prevents the device from being burned out due to overheating.

[0032] In this embodiment, the laser module 6 includes a housing base 60. A welding cavity 61 is formed by inward depression on the lower end surface of the housing base 60, and a cathode pad 65 is provided on the upper end surface of the housing base 60. A plurality of pressure measurement cavities are formed by inward depression on the upper end surface of the housing base 60 on both sides of the cathode pad 65. An anode pad 64 is provided in each of the plurality of pressure measurement cavities. A gold wire bond 63 is fixed on the anode pad 64, and a planar array chip 62 is detachably accommodated in the welding cavity 61. The planar array chip 62 is electrically connected to the anode pad 64 through the bonding wire 63.

[0033] In this embodiment, the planar array chip 62 includes several sub-units 620. The several sub-units 620 are spliced in sequence, and sub-unit pads 621 are provided at both ends of the several sub-units 620. The sub-unit pads 621 are fixedly connected to the bonding wire 63.

[0034] In this embodiment, the optical component includes a camera 8 and a white board 7 fixedly arranged on the shooting side of the camera 8. The camera 8 and the white board 7 are arranged at intervals.

[0035] In this embodiment, to solve the problem that the traditional circuit cannot drive the common cathode partitioned strobing VCSEL array module, the power circuit includes a chip U104. The first pin of the chip U104 is connected to the first end of a resistor R399 and is connected to a power supply of 5V. The second end of the resistor R399 is connected to the first end of a capacitor C530. The second end of the capacitor C530 is connected to the second and eighth pins of the chip U104 and is grounded. The eleventh and sixteenth pins of the chip U104 are connected and are connected to an internal power supply of 5V. And the sixteenth pin of the chip U104 is connected to the first ends of a capacitor C589, a capacitor C590, a resistor R356, and an inductor L108. The second end of the inductor L108 is connected to the first ends of a capacitor C438 and a capacitor C440 and is connected to the fourth pin of a comparator U94. The second end of the capacitor C438 is connected to the second end of the capacitor C440 and is connected to the sixth pin of the comparator U94. The second ends of the capacitor C589 and the capacitor C590 are connected and are connected to the fifteenth pin of the chip U104. The second end of the resistor R356 is connected to the first ends of a resistor R357, a battery C177, a capacitor C184, and an inductor L109 and is connected to an internal power supply of 2.5V. The second end of the inductor L109 is connected to the first end of a capacitor C439. The second ends of the capacitor C439, the capacitor C184, the capacitor C177, and the resistor R357 are connected and are connected to the fifteenth pin of the chip U104. The second end of the inductor L109 is connected to the first pin of the comparator U94. The third pin of the comparator U94 is connected to a capacitor C441 and the first end of a resistor R256. The second end of the resistor R256 is connected to the first end of a resistor R355 and is connected to the fourteenth pin of the chip U104. The second end of the resistor R355 is connected to the second end of the capacitor C441 and is connected to the second pin of the comparator U94. The second pin of the comparator U94 is connected to the ninth pin of the chip U104 and the second end of a capacitor C442. And the fifth pin of the comparator U94 is connected to the first ends of a resistor R254, a resistor R253, a resistor R258, and a resistor R257. The second ends of the resistor R253 and the resistor R254 and the first end of a capacitor C444 are connected and are connected to the first pin of a chip U8. The second ends of the resistor R258 and the resistor R257 and the first end of a capacitor C442 are connected and are connected to the third pin of the chip U8. The second end of the capacitor C442 is connected to the ninth pin of the chip U104. The second end of the capacitor C444 is connected to the first end of a capacitor C443. The second end of the capacitor C443 is connected to the first end of an inductor L110. And the second end of the capacitor C443 is connected to the fourth pin of the chip U8. The second end of the inductor L110 is connected to an internal power supply of 2.5V, and the first end of inductor L110 is connected to the second pin of chip U8. The eighth pin of chip U8 is connected to the first ends of inductor L4 and capacitor C12. The second end of inductor L4 is connected to the built-in power supply of 5V. The seventh, sixth, and ninth pins of chip U8 are respectively connected to the first, second, and third pins of chip U7. The second end of inductor L4 is connected to the first ends of inductor L5, capacitor C15, and capacitor C11, and is connected to the A1 pin of chip U9. The second end of inductor L5 is connected to the first end of capacitor C16 and is connected to the sixth pin of chip U7. The second end of capacitor C16 is connected to the second ends of capacitor C15 and capacitor C11 and is connected to the B1 pin of chip U9. The fourth pin of chip U7 is connected to the C1 pin of chip U9. The A2 pin of chip U9 is connected to the first pin of GaN MOS transistor U11, and the B2 pin of chip U9 is connected to the first end of resistor R9. The second end of resistor R9 is connected to the first end of resistor R358. The C2 pin of chip U9 is connected to the first end of resistor R11. The second end of resistor R11 is floating and is connected to the second, fourth, sixth, eighth, and tenth pins of GaN MOS transistor U11. The second pin of GaN MOS transistor U11 is connected to the positive electrode of diode D1. The negative electrode of diode D1 is connected to the second end of resistor R11. The positive electrode of diode D1 is connected with a positive electrode pin for electrically connecting to the anode probe 52, and the negative electrode of diode D1 is connected with a negative electrode pin for electrically connecting to the cathode probe 51. The eleventh, ninth, seventh, fifth, and third pins of GaN MOS transistor U11 are connected and electrically connected to a capacitor component. The capacitor component includes capacitors C18, C525, C526, C527, and C528 connected in parallel in sequence. Capacitor C528 is grounded, and capacitor C18 is connected to an external high-voltage power supply. By adopting the form of an isolation chip, the signal ground and the power ground are isolated to meet the requirement of driving the common cathode partition column selection. Specifically, when the first pin of GaN MOS transistor U11 outputs a high level (3.3V - 5V), GaN MOS transistor U11 is instantaneously turned on and conducts. At this time, the laser starts to work. However, at this time, the positive extreme of the area array chip 62 will be in a high-voltage state due to the conduction of GaN MOS transistor U11. At the same time, it is also necessary to ensure that the G-S (Gate-Source) voltage meets the state of (3.3V - 5V). Therefore, at this time, we connect the ground of the Gate Driver, the negative electrode of the area array chip 62, and the floating ground of chip U104.

[0036] A test method for a test device of a multi-partition column selection VCSEL area array laser module includes the following specific steps:

[0037] S1. Electrically connect the area array chip 62 through the bonding wire 63 and the anode pad 64 to obtain an assembly;

[0038] S2. Place the assembly above the light-emitting window 40 on the module bracket 4, and then insert several anode probes 52 of the detection component 5 into the corresponding pressure test cavities. At this time, the cathode probe 51 of the detection component 5 is connected to the cathode pad 65;

[0039] S3. One anode probe 52 on each side of the cathode probe 51 is taken as a group, and each group is connected to a drive circuit. During detection, the drive circuit of the required group is driven separately for detection;

[0040] S4. Measure the optical power of the laser through the integrating sphere 3 and the spectrometer, and measure the near-field light spot, far-field light divergence angle and light intensity distribution characteristics of the laser module 6 through the optical components.

[0041] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "several" is two or more. In addition, the term "comprising" and any variation thereof are intended to cover non-exclusive inclusion.

[0042] The present invention has been described according to the embodiments. Without departing from the principle of the present invention, several modifications and improvements can be made to the present device. It should be noted that all technical solutions obtained by means of equivalent replacement or equivalent transformation fall within the protection scope of the present invention.

Claims

1. A test device for a multi-zone column-gated VCSEL array laser module, comprising a bottom plate (1), characterized in that: An electric guide rail (2) is provided on the bottom plate (1). A module support (4) is provided on the electric guide rail (2). A laser module (6) is detachably provided on the module support (4). And a detection member (5) for pressing and measuring the laser module (6) is arranged above the module support (4) in a lifting manner. Among them, a light-emitting window (40) is formed at a position on the module support (4) for installing the laser module (6). And an integrating sphere (3) and an optical component are respectively arranged on both sides of the module support (4). The integrating sphere (3) and the optical component are both arranged on the electric guide rail (2). And the light-incident ends of the integrating sphere (3) and the optical component are both located below the light-emitting window (40). The detection member (5) includes a driving board (50). A driving circuit is arranged inside the board body of the driving board (50). And a cathode probe (51) is arranged on the board body of the driving board (50). A plurality of anode probes (52) are arranged in an array on both sides of the cathode probe (51). The cathode probe (51) and the plurality of anode probes (52) are both electrically connected to the driving circuit. And the plurality of anode probes (52) arranged on both sides of the cathode probe (51) are divided into several groups of partition probes in a one-to-one correspondence manner. And the several groups of partition probes are respectively electrically connected to the driving circuit. The laser module (6) includes a housing base (60). A welding cavity (61) is formed by inward depression on the lower end surface of the housing base (60). And a cathode pad (65) is arranged on the upper end surface of the housing base (60). A plurality of pressing and measuring cavities are formed by inward depression on the upper end surface of the housing base (60) on both sides of the cathode pad (65). An anode pad (64) is arranged in each of the plurality of pressing and measuring cavities. A bonding wire (63) is fixed on the anode pad (64). And a planar array chip (62) is detachably accommodated in the welding cavity (61). The planar array chip (62) is electrically connected to the anode pad (64) through the bonding wire (63). And the planar array chip (62) is connected to the cathode pad (65) through silver paste or gold-tin solder.

2. The test device for a multi-zone column-selective VCSEL array laser module as described in claim 1, characterized in that: The planar array chip (62) includes a plurality of sub-units (620). The plurality of sub-units (620) are spliced in sequence. And sub-unit pads (621) are arranged at both ends of the plurality of sub-units (620). The sub-unit pads (621) are fixedly connected to the bonding wires (63).

3. The testing device for a multi-zone column-selective VCSEL array laser module as described in claim 1, characterized in that: The optical component includes a camera (8) and a white board (7) fixed on the shooting side of the camera (8). The camera (8) and the white board (7) are arranged at an interval.

4. The testing device for a multi-zone column-selective VCSEL array laser module according to claim 2 or 3, characterized in that: The driving circuit (1001) includes several groups of power circuits. The several groups of power circuits are respectively connected to the corresponding anode probes (52). And the several groups of power circuits are all electrically connected to the cathode probe (51).

5. The test device for a multi-zone column-selective VCSEL array laser module according to claim 4, characterized in that: The power circuit includes chip U104. The first pin of chip U104 is connected to the first end of resistor R399 and connected to the power supply 5V. The second end of resistor R399 is connected to the first end of capacitor C530. The second end of capacitor C530 is connected to the second and eighth pins of chip U104 and grounded. The eleventh and sixteenth pins of chip U104 are connected and connected to the built-in power supply 5V. The sixteenth pin of chip U104 is connected to the first ends of capacitor C589, capacitor C590, resistor R356, and inductor L108. The second end of inductor L108 is connected to the first ends of capacitor C438 and capacitor C440 and connected to the fourth pin of comparator U94. The second end of capacitor C438 is connected to the second end of capacitor C440 and connected to the sixth pin of comparator U94. The second ends of capacitor C589 and capacitor C590 are connected and connected to the fifteenth pin of chip U104. The second end of resistor R356 is connected to the first ends of resistor R357, battery C177, capacitor C184, and inductor L109 and connected to the built-in power supply 2.5V. The second end of inductor L109 is connected to the first end of capacitor C439. The second ends of capacitor C439, capacitor C184, capacitor C177, and resistor R357 are connected and connected to the fifteenth pin of chip U104. The second end of inductor L109 is connected to the first pin of comparator U94. The third pin of comparator U94 is connected to capacitor C441 and the first end of resistor R256. The second end of resistor R256 is connected to the first end of resistor R355 and connected to the fourteenth pin of chip U104. The second end of resistor R355 is connected to the second end of capacitor C441 and connected to the second pin of comparator U94. The second pin of comparator U94 is connected to the ninth pin of chip U104 and the second end of capacitor C442. The fifth pin of comparator U94 is connected to the first ends of resistor R254, resistor R253, resistor R258, and resistor R257. The second ends of resistor R253 and resistor R254 and the first end of capacitor C444 are connected and connected to the first pin of chip U8. The second ends of resistor R258 and resistor R257 and the first end of capacitor C442 are connected and connected to the third pin of chip U8. The second end of capacitor C442 is connected to the ninth pin of chip U104. The second end of capacitor C444 is connected to the first end of capacitor C443. The second end of capacitor C443 is connected to the first end of inductor L110 and the second end of capacitor C443 is connected to the fourth pin of chip U8. The second end of inductor L110 is connected to the built-in power supply 2.5V, and the first end of inductor L110 is connected to the second pin of chip U8. The eighth pin of chip U8 is connected to the first ends of inductor L4 and capacitor C12. The second end of inductor L4 is connected to the built-in power supply of 5V. The seventh, sixth, and ninth pins of chip U8 are respectively connected to the first, second, and third pins of chip U7. The second end of inductor L4 is connected to the first ends of inductor L5, capacitor C15, and capacitor C11, and is connected to pin A1 of chip U9. The second end of inductor L5 is connected to the first end of capacitor C16 and is connected to pin 6 of chip U7. The second end of capacitor C16 is connected to the second ends of capacitor C15 and capacitor C11 and is connected to pin B1 of chip U9. The fourth pin of chip U7 is connected to pin C1 of chip U9. Pin A2 of chip U9 is connected to the first pin of GaN MOS transistor U11, and pin B2 of chip U9 is connected to the first end of resistor R9. The second end of resistor R9 is connected to the first end of resistor R358. Pin C2 of chip U9 is connected to the first end of resistor R11. The second end of resistor R11 is floating and is connected to the second, fourth, sixth, eighth, and tenth pins of GaN MOS transistor U11. The second pin of GaN MOS transistor U11 is connected to the positive electrode of diode D1. The negative electrode of diode D1 is connected to the second end of resistor R11. The positive electrode of diode D1 is connected with a positive electrode pin for electrically connecting to the anode probe 52, and the negative electrode of diode D1 is connected with a negative electrode pin for electrically connecting to the cathode probe 51. The eleventh, ninth, seventh, fifth, and third pins of GaN MOS transistor U11 are connected.

6. The test method of a test device for a multi-zone column-selective VCSEL array laser module according to any one of claims 1-5, characterized in that: The following specific steps are included: S1. Electrically connect the area array chip (62) through the bonding wire (63) and the anode pad (64) to obtain an assembly; S2. Place the assembly above the light-emitting window (40) on the module bracket (4), and then insert a plurality of anode probes (52) of the detection component (5) into the corresponding pressure test cavities. At this time, the cathode probe (51) of the detection component (5) is connected to the cathode pad (65); S3. One anode probe (52) on each side of the cathode probe (51) is taken as a group, and each group is connected to a drive circuit. During detection, the drive circuit of the required group is driven separately for detection; S4. Measure the optical power of the laser and the spectrometer through the integrating sphere (3), and measure the near-field light spot, far-field light divergence angle and light intensity distribution characteristics of the laser module (6) through the optical component.

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