Substrate processing apparatus

Abstract

The inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit supporting a substrate in the processing space, a gas supply unit supplying a gas into the processing space, and a plasma generation unit exciting the gas within the processing space into a plasma state, wherein the plasma generation unit includes an RF power source supplying an RF signal, and a first antenna and a second antenna supplied with the RF signal to generate the plasma from the gas supplied into the processing space, and wherein the first antenna is disposed inside the second antenna, and wherein a total height of a coil included in the second antenna is higher than a total height of a coil included in the first antenna.

Description

TECHNICAL FIELD

[0001] Embodiments of the inventive concept described herein relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for etching a substrate using plasma. BACKGROUND

[0002] A process of manufacturing a semiconductor, a display, a solar cell, etc. includes a process of processing a substrate using plasma. For example, an etching apparatus or an ashing apparatus used for ashing during a semiconductor manufacturing process can include a chamber for generating plasma, and can use plasma to perform an etching or ashing process on a substrate.

[0003] Plasma apparatuses can be classified into a capacitively coupled plasma (CCP) apparatus and an inductively coupled plasma (ICP) apparatus according to a method of applying an RF power. The capacitively coupled plasma apparatus generates plasma using an RF electric field formed vertically between electrodes by applying an RF power to the opposite electrode. The inductively coupled plasma apparatus uses an inductive electric field induced by an antenna to convert a source material into plasma.

[0004] The inductively coupled plasma apparatus can distribute current to a plasma antenna through a matcher and a shunt connected to an RF power source, and control coupling between an inner coil and an outer coil. Also, through this, a current ratio between the inner coil and the outer coil can be controlled, and through this, radial uniformity of plasma etching can be controlled. However, in the conventional inductively coupled plasma apparatus, there is still a problem in which an etching rate is different between a peripheral region of a chamber and a central region of the chamber. SUMMARY

[0005] Embodiments of the inventive concept provide an antenna structure capable of increasing a plasma density in a peripheral region of a chamber.

[0006] The problems to be solved by the inventive concept are not limited to the above-mentioned problems. Other technical problems not mentioned will be clearly understood by those skilled in the art to which the inventive concept pertains from the following description.

[0007] The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit supporting a substrate in the processing space, a gas supply unit supplying a gas into the processing space, and a plasma generation unit exciting the gas within the processing space into a plasma state, wherein the plasma generation unit includes an RF power source supplying an RF signal, and a first antenna and a second antenna supplied with the RF signal to generate the plasma from the gas supplied into the processing space, and wherein the first antenna is disposed inside the second antenna, and wherein a total height of coils included in the second antenna is higher than a total height of coils included in the first antenna.

[0008] In one embodiment, the coils included in the second antenna are provided with a plurality of coils stacked as a single layer.

[0009] In one embodiment, the second antenna is provided with a plurality of coils stacked as a plurality of layers.

[0010] In one embodiment, the coils included in the second antenna are disposed at positions overlapping each other when viewed from above.

[0011] In one embodiment, the first antenna and the second antenna are connected in parallel.

[0012] In one embodiment, the number of coils included in the second antenna is four.

[0013] In one embodiment, the number of coils included in the first antenna is four or less.

[0014] The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit supporting a substrate in the processing space, a gas supply unit supplying a gas into the processing space, and a plasma generation unit exciting the gas within the processing space into a plasma state, wherein the plasma generation unit includes an RF power source supplying an RF signal, and a first antenna and a second antenna supplied with the RF signal to generate the plasma from the gas supplied into the processing space, and wherein the first antenna is disposed inside the second antenna, the second antenna includes a plurality of coils, and the plurality of coils included in the second antenna are arranged so that a contact area of the second antenna is minimized.

[0015] In one embodiment, the second antenna is provided with a plurality of coils stacked as a single layer.

[0016] In one embodiment, the second antenna is provided with a plurality of coils stacked as a single layer.

[0017] In one embodiment, the coils included in the second antenna are disposed at positions overlapping each other when viewed from above.

[0018] In one embodiment, the total height of the coils included in the second antenna is higher than the total height of the coils included in the first antenna.

[0019] In one embodiment, the number of coils included in the second antenna is four.

[0020] In one embodiment, the number of coils included in the first antenna is four or less.

[0021] The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit supporting a substrate at the processing space, a gas supply unit supplying a gas into the processing space, and a plasma generation unit exciting the gas within the processing space into a plasma state, wherein the plasma generation unit includes an RF power source supplying an RF signal, and a first antenna and a second antenna supplied with the RF signal to generate the plasma from the gas supplied into the processing space, and wherein the first antenna is disposed inside the second antenna, and the second antenna includes a plurality of coils, and the plurality of coils included in the second antenna are disposed stacked with each other.

[0022] In one embodiment, the coils included in the second antenna are disposed at positions overlapping each other when viewed from above.

[0023] In one embodiment, the total height of the coils of the second antenna is disposed higher than the total height of the coils of the first antenna.

[0024] In one embodiment, the number of coils included in the second antenna is four.

[0025] In one embodiment, the number of coils included in the first antenna is four or less.

[0026] In one embodiment, the first antenna and the second antenna are connected in parallel.

[0027] In the inventive concept, the plasma density in the edge region of the chamber can be increased.

[0028] Effects of the inventive concept are not limited to what has been described above. The effects that have not been described will be understood by those skilled in the art from the description and the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0029] The above and other objects and features will become apparent from the following description of the embodiments, given by way of example only, with reference to the accompanying drawings, in which like reference characters refer to like parts throughout the several views and wherein:

[0030] FIGS. 1(A) to 1(C) are views showing a substrate processing apparatus according to an embodiment of the inventive concept.

[0031] Figure 2 is a perspective view more specifically showing a shape of an antenna according to an embodiment of the inventive concept.

[0032] Figure 3 is a side view of a shape of an antenna according to an embodiment of the inventive concept.

[0033] FIG. 4(A) is a view showing a shape of a conventional antenna, and 4(B) is a view showing a shape of an antenna according to an embodiment of the inventive concept.

[0034] FIGS. 5(A) to 5(B) are views showing a substrate processing apparatus according to the inventive concept in a circuit form.

[0035] FIGS. 6(A) to 6(B) are views showing a magnetic field distribution in a conventional substrate processing apparatus and a substrate processing apparatus according to the inventive concept. DETAILED DESCRIPTION

[0036] The inventive concept can be variously modified and can have various forms, and specific embodiments of the inventive concept will be illustrated in the drawings and described in detail in the detailed description. However, the embodiments according to the inventive concept are not intended to limit the forms disclosed specifically, and it should be understood that the inventive concept includes all modifications, equivalent replacements included in the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies can be omitted when it is possible to obscure the nature of the inventive concept.

[0037] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the inventive concept. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. In addition, the term "exemplary" is intended to mean an example or illustration.

[0038] It is to be understood that the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections although the elements, components, regions, layers and / or sections should not be limited by such terms. The terms are only used to differentiate one element, component, region, layer or section from another region, layer or section. It is thus possible that the first element, first component, first region, first layer or first section discussed below can be termed the second element, second component, second region, second layer or second section without departing from the inventive concept.

[0039] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0040] FIGS. 1(A) to 1(C) are views illustrating a substrate processing apparatus according to embodiments of the inventive concept.

[0041] Referring to FIG. 1(A), the substrate processing apparatus 100 can include a body 110, a dielectric window 120, a gas supply unit 130, a plasma generation unit 140, a baffle 150, and a substrate support unit 200.

[0042] A top surface of the body 110 is open and a space is formed therein. An inner space of the body 110 provides a space in which a substrate process is performed. An exhaust hole 111 can be formed at a bottom surface of the body 110. The exhaust hole 111 is connected to an exhaust line 161 and provides a passage through which reaction byproducts generated during processing and gas maintained within the body 110 are discharged to the outside. The dielectric window 120 seals the open top surface of the body 110. The dielectric window 120 has a radius corresponding to a circumference of the body 110. The dielectric window 120 can be formed of a dielectric material. The dielectric window 120 can be provided with an aluminum material. A chamber according to the inventive concept can be configured to include the body 110 and the dielectric window 120.

[0043] The gas supply unit 130 supplies a process gas onto the substrate W supported by the substrate support unit 200. The gas supply unit 130 includes a gas storage unit 135, a gas supply line 133, and a gas inlet port 131. The gas supply line 133 connects the gas storage unit 135 and the gas inlet port 131. The process gas stored in the gas storage unit 135 is supplied to the gas inlet port 131 through the gas supply line 133. The gas inlet port 131 is installed on the top wall of the chamber. The gas inlet port 131 is positioned to face the substrate support unit 200. According to one embodiment, the gas inlet port 131 can be installed at the center of the top wall of the chamber. A valve can be installed at the gas supply line 133 to open and close the internal passage thereof, or adjust the flow rate of the gas flowing through the internal passage thereof. For example, the process gas can be an etching gas.

[0044] The baffle 150 controls the flow of the process gas in the chamber 110. The baffle 150 is disposed in a ring shape and positioned between the chamber 110 and the substrate support unit 200. A through-hole 151 is formed at the baffle 150. The process gas staying in the chamber 110 passes through the through-hole 151 and flows into the exhaust hole 111. The flow of the process gas flowing into the exhaust hole 111 can be controlled according to the shape and arrangement of the through-hole 151.

[0045] The substrate support unit 200 is positioned within the process chamber 110 and supports the substrate W. The substrate support unit 200 can be provided with an electrostatic chuck for supporting the substrate W using electrostatic force. Alternatively, the substrate support unit 200 can support the substrate W in various ways such as mechanical clamping. Hereinafter, it will be described with the electrostatic chuck as an example.

[0046] The electrostatic chuck 200 can include a first plate 210, an electrode 220, a heater 230, and a focus ring 240. The first plate 210 is disposed in a disc shape and the substrate W is placed on the top surface thereof. The top surface of the first plate 210 can be stepped such that the center region is higher than the edge region. The radius of the center region of the top surface of the first plate 210 can be smaller than the radius of the substrate W. Accordingly, the edge region of the substrate W is located outside the top center region of the first plate 210. The first plate 210 can be provided as a dielectric plate made of a dielectric material.

[0047] The electrode 220 is disposed within the first plate 210. The electrode 220 is connected to an external power source 260 and applies electric power from the power source. The electrode 220 forms electrostatic force between the electrode 220 and the substrate W to adhere the substrate W to the top surface of the first plate 210.

[0048] The heater 230 is disposed within the first plate 210. The heater 230 can be disposed under the electrode 220. The heater 230 is electrically connected to the external power source 260 and generates heat by resisting an applied current. The generated heat is transferred to the substrate W through the first plate 210. The substrate W is heated to a predetermined temperature by the heat generated by the heater 230. The heater 230 can be disposed in a spiral shape coil. The heater 230 can be embedded in the first plate 210 at uniform intervals.

[0049] The body disposed under the first plate 210 can include a metal plate. According to an embodiment, the entire body can be disposed as a metal plate. The body can be electrically connected to the additional power source 300. The additional power source 300 can be provided as a high-frequency power source that generates high-frequency power. The high-frequency power source can include an RF power source. The body can receive high-frequency power from the additional power source 300. To this end, the body can function as an electrode, i.e., a bottom electrode. An additional matcher 310 can be disposed between the body and the additional power source 300 to perform impedance matching.

[0050] The focus ring 240 is disposed in a ring shape and is arranged along the circumference of the first plate 210. The top surface of the focus ring 240 can be disposed in a stepped shape such that the inner portion adjacent to the first plate 210 is lower than the outer portion. The inner portion of the top surface of the focus ring 240 can be located at the same height as the center region of the top surface of the first plate 210. The inner portion of the top surface of the focus ring 240 supports the edge region of the substrate W located outside the first plate 210. The focus ring 240 expands the electric field formation region such that the substrate is located at the center of the region in which the plasma is formed.

[0051] The plasma generation unit 140 excites a process gas supplied into the chamber into a plasma state. The plasma generation unit 140 can include antennas 1411 and 1412, an RF power source 142, and a matcher 144. The antennas 1411 and 1412 can be located above the dielectric window 120 and can be provided in a spiral shape coil. The RF power source 142 is connected to the antennas 1411 and 1412 and can apply high frequency power to the antennas 141. The matcher 144 can be connected to output terminals of the RF power source 142 to match output impedance on the power source side with input impedance on the load side. The matcher 144 can include a current distributor 143. The current distributor 143 can be integrated into the matcher 144 to be implemented. However, unlike this, the matcher 144 and the current distributor 143 can be provided and implemented as separate components. The current distributor 143 can distribute a current supplied from the RF power source 142 to the antennas 1411 and 1412. By the high frequency power applied to the antennas 1411 and 1412, an induction electric field is formed within the chamber. By obtaining energy required for ionization from the induction electric field, a process gas is excited into a plasma state. The process gas in the plasma state is supplied to the substrate W and processes the substrate W. The process gas in the plasma state can perform an etching process.

[0052] In FIGS. 1(A) to 1(C), the antennas 141 included in the substrate processing apparatus 100 can include first antennas 1411 and second antennas 1412. In the ICP processing chamber of FIGS. 1(A) to 1(C), plasma is formed by an azimuthal electric field by an induction coil separated from the chamber by the dielectric window 120.

[0053] The first antennas 1411 and the second antennas 1412 can receive RF signals to generate plasma from a gas supplied into a process space of the chamber. The first antennas 1411 can be provided inside the second antennas 1412. The first antennas 1411 can be inner antennas. The second antennas 1412 can be outer antennas. The first antennas 1411 and the second antennas 1412 can be connected in parallel. Each of the first antennas 1411 and the second antennas 1412 can include a coil. Detailed structures of the first antennas 1411 and the second antennas 1412 will be described later with reference to FIGS. 2(A) to 2(C). Figures 2-3

[0054] FIG. 1(B) is a view illustrating an example of a substrate processing apparatus according to another embodiment of the inventive concept.

[0055] ​The description of the portion overlapping with FIG. 1(A) will be omitted. According to one embodiment of FIG. 1(B), the RF power source can be provided as a plurality of RF power sources 142a and 142b to be connected to the first antenna 1411 and the second antenna 1412, respectively. Accordingly, the first antenna 1411 and the second antenna 1412 can receive high-frequency power through separate RF power sources. In this case, a first matcher 144a and a second matcher 144b can be included. The first matcher 144a can match the impedance of the first RF power source 142a with the load-side impedance. The second matcher 144b can match the impedance of the second RF power source 144a with the load-side impedance. In one embodiment of FIG. 1(B), the first matcher 144a and the second matcher 144b can not include a current distributor.

[0056] FIG. 1(C) is a diagram illustrating an example of a substrate processing apparatus according to another embodiment of the inventive concept.

[0057] Similarly, the description of the portion overlapping with FIG. 1(A) will be omitted. According to one embodiment of FIG. 1(C), the lower power source can include a DWG 170 and a lower matcher 171.

[0058] According to one embodiment, a substrate processing apparatus according to the inventive concept can include a designed waveform generator (hereinafter, can be referred to as a DWG or a set waveform generator) 170. The designed waveform generator 170 can generate an output voltage Vout having an arbitrary waveform (hereinafter, referred to as a "set waveform") set by an operator, and can supply the generated output voltage Vout to the main body 110. For example, the set waveform can be output at a frequency of several kHz to several MHz, and can be output at any variable voltage level of several tens of V to several tens of kV. A semiconductor wafer W to be subjected to processing can be disposed in the main body 110, and a semiconductor process can be performed on the semiconductor wafer W using the output voltage disposed therein.

[0059] The set waveform generator 170 can include at least one pulse module generating a square wave and at least one slope module generating a variable waveform. The at least one pulse module can be implemented with a plurality of pulse modules, and the at least one slope module can be implemented with a plurality of slope modules. According to an embodiment, the number of pulse modules and the number of slope modules can be variously selected.

[0060] The maximum output voltage of the set waveform generator 170 can be determined according to the number of pulse modules and the number of slope modules. The output voltage of the set waveform generator 170 can correspond to the sum of the DC voltage supplied to the at least one pulse module and the DC voltage supplied to the at least one slope module. Specifically, the at least one pulse module and the at least one slope module can be connected to each other, and thus the set waveform generator 170 can provide a voltage level corresponding to the sum of the DC voltage supplied to the at least one pulse module and the DC voltage supplied to the at least one slope module.

[0061] The plurality of pulse modules can include at least one positive pulse module generating a positive voltage and / or at least one negative pulse module generating a negative voltage. The plurality of slope modules can include at least one positive slope module generating a positive voltage and / or at least one negative slope module generating a negative voltage.

[0062] In one embodiment, the at least one pulse module and the at least one slope module can be connected in a cascade manner. Here, when a plurality of modules are connected, the cascade method indicates a method of connecting the output of one module in series with the input of another module, and can be referred to as a cascade connection. In one embodiment, the output of the at least one pulse module can be connected to the input of the at least one slope module. However, the inventive concept is not limited thereto, and the output of the at least one slope module can be connected to the input of the at least one pulse module.

[0063] Hereinafter, the structure of the antenna 141 according to the inventive concept will be described with reference to more detailed drawings.

[0064] Figure 2 is a perspective view more specifically illustrating the structure of the antenna 141 according to an embodiment of the inventive concept.

[0065] Reference Figure 2 In the inventive concept, in order to reduce the mutual coupling between coils and increase the magnetic field in the edge region of the plasma chamber, a plurality of coils stacked vertically can be used, in which a second antenna 1412 is disposed in the edge region. The second antenna 1412 can include a plurality of coils. According to one embodiment, the second antenna 1412 has a coil shape wound a plurality of times in the up / down direction. Hereinafter, a region in which the second antenna 1412 is rotated once is referred to as one coil. According to one example, the second antenna 1412 has a plurality of coils, and the coils have the same diameter and are disposed to overlap each other when viewed from above.

[0066] To increase the density of the plasma in the outer region of the etching chamber, i.e., the edge region, it is important to reduce the capacitive coupling of the ICP coil through the dielectric window. To this end, in the present inventive concept, the second antenna 1412 included in the ICP source is applied in a structure in which coils are stacked. Accordingly, there is an effect of reducing the capacitive coupling of the second antenna 1412 coil with the dielectric window. In addition, the coupling between the first antenna 1411 coil and the second antenna 1412 coil can be reduced to improve the current ratio control of the first antenna 1411 and the second antenna 1412.

[0067] In the case of the antenna according to the embodiment of the present inventive concept, an antenna structure including a first antenna 1411 of a double stack and a second antenna 1412 of a single stack can be disclosed. Among them, the first antenna 1411 refers to a structure in which two coils having different diameters are provided and coils having the same diameter are stacked with each other. The second antenna 1412 of a single stack includes only coils having the same diameter, and refers to a structure in which they are stacked with each other. Through such a design structure, there is an effect of increasing the inductive coupling of the second antenna 1412 with the plasma in the edge region.

[0068] Figure 3 is a side view of the shape 141 of the antenna according to the embodiment of the present inventive concept.

[0069] According to Figure 3 According to an embodiment of the present inventive concept, the total height of the second antenna 1412 can be set to be higher than the total height of the first antenna 1411. According to an embodiment, the total height formed by the coils included in the second antenna 1412 can be set to be higher than the total height formed by the coils included in the first antenna 1411. According to an embodiment, the number of coils included in the second antenna 1412 can be greater than the number of coils included in the first antenna 1411.

[0070] According to an embodiment, the first antenna 1411 can be set by twisting two coils. According to an embodiment, the second antenna 1412 can be set by sequentially stacking four coils.

[0071] The present inventive concept can employ an antenna structure for increasing the number of windings in the axial direction to overcome the problem that it is difficult to increase the number of windings in the horizontal direction of the coil due to space limitations.

[0072] According to an embodiment, all the coils included in the second antenna 1412 can be disposed at a position overlapping when viewed from above. Accordingly, it can be confirmed that even though a plurality of coils are included, the second antenna 1412 is stacked in a single layer. In addition, through this, the plurality of coils included in the second antenna 1412 can be provided in a structure capable of minimizing the contact area between the second antenna 1412 and the dielectric window.

[0073] FIG. 4(A) is a view illustrating a shape of a conventional antenna, and 4(B) is a view illustrating a shape of an antenna according to an embodiment of the inventive concept.

[0074] In the case of FIG. 4(A), an embodiment in which a coil is disposed to extend in the same plane in the shape of a conventional antenna is disclosed. Referring to FIG. 4(A), since the distance between the first antenna 1411 and the second antenna 1412 is close, there is a problem in that the mutual coupling between the coil included in the first antenna 1411 and the coil included in the second antenna 1412 is high. In addition, there is a problem in that the surface area at which the flat coil as illustrated in FIG. 4(A) is in contact with the dielectric window 120 is large, and thus the capacitive coupling through the dielectric window by the plasma Cd greatly occurs.

[0075] To overcome this, when the second antenna 1412 is disposed farther from the first antenna 1411, the distance between the inner wall of the chamber and the coil included in the second antenna 1412 becomes closer, resulting in a large amount of magnetic field escaping to the outside.

[0076] FIG. 4(B) illustrates a shape of an antenna according to an embodiment of the inventive concept. When the antenna is formed as in the embodiment of the inventive concept, the distance between the coil included in the first antenna 1411 and the coil included in the second antenna 1412 can be increased to reduce the mutual coupling.

[0077] Referring to FIG. 4(B), it can be confirmed that the area in which the second antenna 1412 is in contact with the dielectric window 120 is smaller according to the antenna structure of the inventive concept than the conventional antenna structure.

[0078] As the contact surface of the antenna increases, there is a problem in that the capacitive coupling through the dielectric window 120 increases. The vertical stacked structure of the coil included in the second antenna 1412 according to the inventive concept has an effect of minimizing the contact surface of the coil in contact with the dielectric window 120, thereby reducing the capacitive coupling through the dielectric window 120 and guiding the magnetic field to the outermost area of the plasma chamber. In addition, since the contact area with the dielectric window 120 is small, there is an effect of minimizing the influence of the by-products or particles generated. Through this structure, the maximum effect at the extreme edge portion of the etching chamber can be obtained.

[0079] FIGS. 5(A) to 5(B) are views illustrating a substrate processing apparatus according to the inventive concept in a circuit form.

[0080] FIG. 5(A) illustrates inductive coupling of a substrate processing apparatus according to the inventive concept.

[0081] The meaning of each symbol illustrated in FIG. 5(A) is as follows. L ant is an antenna inductance, Rant is an antenna resistance, L p is a plasma geometric area coupled to a coil (doughnut shape), L e is an electron inertia inductance, and R p is a plasma resistance.

[0082] Referring to FIG. 5(A), since mutual coupling between an inductance of an antenna and an inductance of a plasma occurs, more coils included in the second antenna 1412 can be formed to increase inductive coupling.

[0083] FIG. 5(B) is a circuit diagram illustrating capacitive coupling of a substrate processing apparatus according to the inventive concept.

[0084] The meaning of each symbol illustrated in FIG. 5(B) is as follows.

[0085] L ant indicates an antenna inductance, R ant indicates an antenna resistance, C d indicates a dielectric window capacitance, C s indicates a plasma sheath layer capacitance, and R s indicates a plasma sheath layer resistance.

[0086] According to FIG. 5(B), the second antenna 1412 coils can be stacked in a single layer to reduce capacitive coupling between the dielectric window and the capacitor in the plasma sheath layer.

[0087] According to the inventive concept, plasma processing can be more effectively performed by reducing capacitive coupling and increasing inductive coupling. In addition, a high magnetic field can be ensured by controlling them to have high inductance.

[0088] In the inventive concept, in order to increase plasma density in an edge region, inductive power coupling can be increased, and capacitive power coupling can be reduced.

[0089] According to one embodiment, by increasing the number of coils included in the second antenna 1412 to form multiple windings, there is an effect of ensuring a high magnetic field at an edge portion of a chamber.

[0090] That is, according to the inventive concept, there is an effect of reducing capacitive coupling by reducing a contact area with a dielectric window through a stacked structure of coils included in the second antenna 1412, and increasing inductance through a structure including multiple windings in the second antenna 1412. In addition, through this, there is also an effect of satisfying uniformity of plasma density by concentrating a magnetic field on an edge.

[0091] FIGS. 6(A) to 6(B) are views illustrating a magnetic field distribution in a conventional substrate processing apparatus and a substrate processing apparatus according to the inventive concept.

[0092] FIG. 6(A) illustrates results measured using an axial magnetic field measured under a dielectric window and a magnetic PCB coil sensor when CR = 1 in a conventional substrate processing apparatus, and FIG. 6(B) illustrates results measured using a magnetic PCB coil sensor when CR = 1 under a dielectric window according to the present inventive concept.

[0093] When the substrate processing apparatus according to the present inventive concept is used, it can be confirmed that the result of increasing the magnetic field under the coil of the second antenna 1412. Through this, it can be confirmed that the plasma density at the edge portion will also become uniform.

[0094] Effects of the present inventive concept are not limited to the above-mentioned effects and an effect not mentioned can be clearly understood by those skilled in the art to which the present inventive concept pertains from the present specification and the accompanying drawings.

[0095] While the preferred embodiments of the present inventive concept have been shown and described with respect to the accompanying drawings, the present inventive concept is not limited to the above-described specific embodiments and it should be noted that those of ordinary skill in the art to which the present inventive concept pertains can perform the present inventive concept differently from the above-described specific embodiments without departing from the essence of the present inventive concept required in the claims and the present inventive concept should not be interpreted in a limited way only to the above-described specific embodiments.

Claims

1. A substrate processing apparatus comprising: a chamber including a main body having a processing space therein and a dielectric window sealing an open top surface of the main body; a substrate support unit supporting a substrate in the processing space; a gas supply unit supplying a gas into the processing space; and a plasma generating unit exciting the gas within the processing space into a plasma state, wherein the plasma generating unit includes: an RF power source supplying an RF signal; and a first antenna and a second antenna supplied with the RF signal to generate the plasma from the gas supplied into the processing space, and wherein the first antenna is disposed inside the second antenna, wherein coils included in the first antenna are disposed in a double stacked structure having two kinds of coils with different diameters, and coils with the same diameter are stacked with each other or disposed in a spiral shape and disposed to overlap with each other when viewed from above, wherein the second antenna is provided with a plurality of coils in a single stacked structure, and the plurality of coils of the second antenna have the same diameter and are disposed to overlap with each other when viewed from above, wherein a total height of the coils included in the second antenna is higher than a total height of the coils included in the first antenna with respect to the dielectric window, and wherein the first antenna and the second antenna are disposed at a distance that reduces mutual coupling between the coils included in the first antenna and the coils included in the second antenna.

2. The substrate processing apparatus according to claim 1, wherein the first antenna and the second antenna are connected in parallel.

3. The substrate processing apparatus according to claim 2, wherein a number of coils included in the second antenna is four.

4. The substrate processing apparatus according to claim 1, wherein a number of coils included in the first antenna is four or less. ​ ​

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