Device for processing a substrate and method for processing a substrate

Abstract

A device for processing a substrate is provided. In an exemplary embodiment, the device for processing the substrate includes: a processing chamber configured to have a processing space therein; a support member located in the processing space to support the substrate; and a gas supply unit configured to supply a surface modification gas to the processing space, wherein the gas supply unit includes: a bubbler tank provided with an accommodation space for storing a liquid alkenyl chemical and configured to bubble the alkenyl chemical by supplying an inert gas to the accommodation space to generate the surface modification gas; a heater configured to heat the alkenyl chemical stored in the bubbler tank at a first temperature; and a gas supply pipeline connected between the processing chamber and the bubbler tank to supply the surface modification gas to the processing space and provided with a first valve.

Description

Technical Field

[0001] The present invention relates to an apparatus for processing a substrate and a method for processing a substrate, and more particularly, to an apparatus for processing a substrate and a method for processing a substrate by supplying a surface modification gas to the substrate. Background Art

[0002] In semiconductor manufacturing processes, a lithography process is a process of forming a desired pattern on a wafer. The lithography process is performed in a substrate processing apparatus, which is generally connected to an exposure apparatus to continuously perform a coating process, an exposure process, and a development process. Such a substrate processing apparatus sequentially performs a hexamethyldisilazane (hereinafter referred to as HMDS) treatment process, a coating process, an exposure process, a baking process, and a development process.

[0003] The HMDS treatment process is a process of supplying HMDS onto a wafer before coating a photoresist (PR) to increase the contact efficiency of the photoresist. However, although the light source technology used in the exposure process has evolved from excimer lasers such as ARF to extreme ultraviolet (EUV) light sources, as the pattern size is reduced to 5 nm or less, pattern collapse occurs in regions where HMDS is not coated on the substrate, and thus a method for solving such a problem is required. Summary of the Invention

[0004] An object of the present invention is to provide an apparatus for processing a substrate and a method for processing a substrate that can effectively process a substrate.

[0005] An object of the present invention is to provide an apparatus for processing a substrate and a method for processing a substrate by providing a surface modification gas that can increase the adhesion between the substrate and the photoresist.

[0006] An object of the present invention is to provide an apparatus for processing a substrate and a method for processing a substrate that can effectively perform a process of supplying and processing a surface modification gas onto a substrate.

[0007] The object of the present invention is not limited to the above object, and in the following description, other objects not mentioned above will be apparent to those of ordinary skill in the art.

[0008] Exemplary embodiments of the present invention provide an apparatus for processing a substrate. In an exemplary embodiment, the apparatus for processing a substrate includes: a processing chamber configured to have a processing space therein; a support member located in the processing space to support the substrate; and a gas supply unit configured to supply a surface modification gas to the processing space, wherein the gas supply unit includes: a bubbler tank provided with an accommodation space for storing a liquid alkyne-based chemical and configured to bubble the alkyne-based chemical by supplying an inert gas to the accommodation space to generate a surface modification gas; a heater configured to heat the alkyne-based chemical stored in the bubbler tank at a first temperature; and a gas supply line coupled between the processing chamber and the bubbler tank to supply the surface modification gas to the processing space and provided with a first valve.

[0009] In an exemplary embodiment, the gas supply unit may further include a concentration control unit configured to supply a concentration control gas for controlling the concentration of the alkyne-based chemical constituting the surface modification gas.

[0010] In an exemplary embodiment, the concentration control unit may include a concentration control gas supply line connected to the gas supply line to supply the concentration control gas to the gas supply line.

[0011] In an exemplary embodiment, the concentration control unit may further include a concentration measurement member provided in the gas supply line to measure the concentration of the surface modification gas.

[0012] In an exemplary embodiment, the concentration measurement member may be provided in the gas supply line at a downstream position of the point where the gas supply line and the concentration control gas supply line are connected to the gas supply line.

[0013] In an exemplary embodiment, the gas supply line may further include a carrier gas supply line connected to the bubbler tank to supply an inert gas to the bubbler tank.

[0014] In an exemplary embodiment, the apparatus for processing a substrate may further include a controller configured to control the gas supply unit, wherein the controller may control the heater to heat the alkyne-based chemical stored in the bubbler tank at a first temperature and control the heater to supply an inert gas to the alkyne-based chemical heated at the first temperature to generate a surface modification gas.

[0015] In an exemplary embodiment, the controller may further control the concentration control unit and control the gas supply unit and the concentration control unit to control the concentration of the surface modification gas by supplying the concentration control gas to the gas supply line while supplying the surface modification gas to the processing space.

[0016] In an exemplary embodiment, the first temperature may be the temperature just before the alkyne-based chemical reaches its boiling point.

[0017] In an exemplary embodiment, the first temperature may be a temperature that is 30°C to 5°C lower than the boiling point of the alkyne-based chemical.

[0018] In an exemplary embodiment, the alkyne-based chemical may be 3,5-dimethyl-1-hexyn-3-ol.

[0019] In an exemplary embodiment, the first temperature may be 120°C to 145°C.

[0020] In an exemplary embodiment, the apparatus for processing a substrate may further include: a heating member configured to heat the substrate placed on a support member; and an exhaust unit configured to exhaust the processing space.

[0021] In an exemplary embodiment, the apparatus for processing a substrate may further include a controller configured to control a concentration control unit, wherein the controller may control the supply flow rate per unit time of the concentration control gas based on the measurement value of the concentration measurement member, and increase the supply flow rate per unit time of the concentration control gas when the measurement value of the concentration measurement member is higher than a predetermined value.

[0022] In an exemplary embodiment, the concentration control gas and the inert gas may be the same gas.

[0023] In an exemplary embodiment, the concentration control gas and the inert gas may be nitrogen.

[0024] Exemplary embodiments of the present invention provide a method for processing a substrate. In an exemplary embodiment, the method for processing a substrate includes processing the substrate by supplying a surface modification gas for improving the adhesion of a photoresist to a processing space in which the substrate is provided before coating the photoresist on the substrate, wherein the surface modification gas is provided as a mixed gas of an alkyne-based chemical and an inert gas, and wherein the surface modification gas is generated by supplying the inert gas while heating the alkyne-based chemical at a first temperature in a bubbler tank storing the liquid alkyne-based chemical.

[0025] In an exemplary embodiment, the surface modification gas may be supplied to the substrate by changing the concentration of the surface modification gas while supplying the surface modification gas to the processing space.

[0026] In an exemplary embodiment, the alkyne-based chemical may be 3,5-dimethyl-1-hexyn-3-ol, and the first temperature may be 120°C to 145°C.

[0027] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes: a processing chamber configured to have a processing space therein; a support member located in the processing space to support the substrate; a gas supply unit configured to supply a surface modification gas provided as a mixed gas of an alkynyl chemical and an inert gas to the processing space; a concentration control unit configured to supply a concentration control gas that controls the concentration of the alkynyl chemical constituting the surface modification gas; and a controller configured to control the gas supply unit and the concentration control unit, wherein the gas supply unit includes: a bubbler tank provided with an accommodation space for storing a liquid alkynyl chemical and configured to generate the surface modification gas by bubbling the alkynyl chemical by supplying the inert gas to the accommodation space; a carrier gas supply line connected to the bubbler tank to supply the inert gas to the bubbler tank; a heater configured to heat the alkynyl chemical stored in the bubbler tank at a first temperature; and a gas supply line connected between the processing chamber and the bubbler tank to supply the surface modification gas to the processing space and provided with a first valve, and wherein the controller controls the heater to supply the inert gas to the alkynyl chemical heated at the first temperature to generate the surface modification gas, and controls the gas supply unit and the concentration control unit to control the concentration of the surface modification gas by supplying the concentration control gas to the gas supply line while supplying the surface modification gas to the processing space.

[0028] According to an exemplary embodiment of the present invention, a substrate can be effectively processed.

[0029] According to an exemplary embodiment of the present invention, a surface modification gas capable of increasing the adhesion between the substrate and the photoresist can be provided.

[0030] According to an exemplary embodiment of the present invention, a process of supplying and processing the surface modification gas on the substrate can be effectively performed.

[0031] The effects of the present invention are not limited to the above effects, and those skilled in the art can clearly understand the effects not mentioned from this specification and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0033] Figure 2 shows Figure 1 a cross-sectional view of a substrate processing apparatus of a coating block and a developing block.

[0034] Figure 3 is Figure 1 a plan view of the substrate processing apparatus.

[0035] Figure 4is a diagram showing Figure 3 an example of the hand of a transfer robot.

[0036] Figure 5 is a schematic diagram showing Figure 3 a planar cross-sectional view of an example of a heat treatment chamber.

[0037] Figure 6 is Figure 5 a front cross-sectional view of the heat treatment chamber.

[0038] Figure 7 is a cross-sectional view showing a substrate processing apparatus provided in Figure 6 a heating unit.

[0039] Figure 8 is a flowchart showing the process sequence for processing a substrate. DETAILED DESCRIPTION

[0040] Hereinafter, exemplary embodiments of the present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. However, the present invention may be implemented differently and is not limited to the following exemplary embodiments. In the following description of the present invention, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid obscuring the subject matter of the present invention. Further, for parts having similar functions and actions, the same reference numerals are used throughout the drawings.

[0041] Unless explicitly described to the contrary, the term "comprising" any component will be understood to imply including the stated element but not excluding any other element. It should be understood that the terms "comprising" and "having" are intended to specify the presence of features, quantities, steps, operations, components, and parts or combinations thereof described in this specification, but do not preclude the possibility of the pre-existence or addition of one or more other features, quantities, steps, operations, components, and parts or combinations thereof.

[0042] The singular expressions used herein include plural expressions unless they have a clearly contrary meaning in the context. Thus, for a clearer description, the shapes, sizes, etc. of the elements in the drawings may be exaggerated.

[0043] Terms such as first and second are used to describe various components, but the components are not limited by the terms. The terms are only used to distinguish one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may be referred to as the first component.

[0044] It should be understood that when a component is referred to as being "coupled" or "connected" to another component, a component can be directly coupled or connected to another component, but there can also be intermediate components. Conversely, when a component is "directly coupled" or "directly connected" to another component, it should be understood that there are no intermediate components. Other expressions describing the relationship between components should be similarly interpreted, such as "between...", "directly between...", or "adjacent" and "directly adjacent".

[0045] All terms used herein, including technical or scientific terms, have the same meaning as commonly understood by those skilled in the art, unless they are defined differently. Terms defined in commonly used dictionaries should be interpreted as having meanings that match those in the context of the relevant technology, and should not be interpreted as ideal or overly formal meanings, unless they are explicitly defined in this application.

[0046] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention, Figure 2 shows Figure 1 a cross-sectional view of a substrate processing apparatus of a coating block and a developing block, and Figure 3 is Figure 1 a plan view of the substrate processing apparatus.

[0047] Referring to Figures 1 to 3 , the substrate processing apparatus 1 includes a transfer module 20, a processing module 30, and an interface module 40. According to an exemplary embodiment, the transfer module 20, the processing module 30, and the interface module 40 are arranged in a column in sequence. Hereinafter, the direction in which the transfer module 20, the processing module 30, and the interface module 40 are arranged is referred to as the X-axis direction 12, the direction perpendicular to the X-axis direction 12 when viewed from the top is referred to as the Y-axis direction 14, and the direction perpendicular to both the X-axis direction 12 and the Y-axis direction 14 is referred to as the Z-axis direction 16.

[0048] The transfer module 20 transfers the substrate W from the container 10 that receives the substrate W to the processing module 30, and receives the processed substrate W in the container 10. The longitudinal direction of the transfer module 20 is set to the Y-axis direction 14. The transfer module 20 has a loading port 22 and a transfer frame 24. The loading port 22 is located on the opposite side of the processing module 30 based on the transfer frame 24. The container 10 that receives the substrate W is placed on the loading port 22. A plurality of loading ports 22 can be provided, and the plurality of loading ports 22 can be arranged along the Y-axis direction 14.

[0049] As the container 10, a closed container 10 such as a front-opening unified pod (FOUP) can be used. The container 10 can be placed on a transfer device (not shown) such as an overhead transfer device, an overhead conveyor, or an automated guided vehicle, or placed on the loading port 22 by an operator.

[0050] The indexing robot 2200 is disposed within the indexing frame 24. In the indexing frame 24, guide rails 2300 are provided, where the longitudinal direction is set as the Y-axis direction 14, and the indexing robot 2200 can be set to be movable on the guide rails 2300. The indexing robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 can be set to move forward and backward, rotate about the axis in the Z-axis direction 16, and be movable along the Z-axis direction 16.

[0051] The processing module 30 can perform a coating process and a developing process on the substrate w. The processing module 30 has a coating block 30a and a developing block 30b. The coating block 30a performs a coating process on the substrate W, and the developing block 30b performs a developing process on the substrate W. A plurality of coating blocks 30a are provided and stacked on top of each other. A plurality of developing blocks 30b are provided, and the developing blocks 30b are stacked on top of each other. According to Figure 2 an exemplary embodiment, two coating blocks 30a are provided, and two developing blocks 30b are provided. The coating block 30a can be disposed below the developing block 30b. According to the exemplary embodiment, the two coating blocks 30a can perform the same process and can be provided with the same structure as each other. Additionally, the two developing blocks 30b can perform the same process as each other and can be provided with the same structure as each other.

[0052] Referring to Figure 3 , the coating block 30a has a heat treatment chamber 3200, a transfer chamber 3400, a liquid processing chamber 3600, and a buffer chamber 3800. The liquid processing chamber 3200 performs a heat treatment process on the substrate w. The heat treatment process can include a cooling process and a heating process. The liquid processing chamber 3600 supplies a liquid onto the substrate W to form a liquid film. The liquid film can be a photoresist film or an anti-reflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid processing chamber 3600 within the coating block 30a.

[0053] The transfer chamber 3400 is provided with a longitudinal direction parallel to the X-axis direction 12. The transfer chamber 3400 is provided with a transfer robot 3420. The transfer unit 3420 transfers the substrate between the heat treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800. According to an exemplary embodiment, the transfer unit 3420 includes a hand A on which the substrate W is placed, and the hand A can be set to move forward and backward, rotate about the axis in the Z-axis direction 16, and move along the Z-axis direction 16. In the transfer chamber 3400, a guide rail 3300 is provided, the longitudinal direction of which is parallel to the X-axis direction 12, and the transfer unit 3420 can be set to be movable on the guide rail 3300.

[0054] Figure 4 is a diagram showing Figure 3 an example of the hand of the transfer robot. Refer to Figure 5 , the hand A has a base 3428 and a support protrusion 3429. The base 3428 may have an annular shape, a part of the circumference of which is curved. The base 3428 has an inner diameter larger than the diameter of the substrate W. The support protrusion 3429 extends from the base 3428 to the inside thereof. A plurality of support protrusions 3429 are provided and support the edge region of the substrate W. According to an exemplary embodiment, four support protrusions 3429 may be provided at equal intervals.

[0055] Refer again to Figure 2 and Figure 3 , a plurality of heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged in a row along the X-axis direction 12. The heat treatment chambers 3200 are located on one side of the transfer chamber 3400.

[0056] Figure 5 is a schematic plan cross-sectional view showing an example of the heat treatment chamber of Figure 3 , and Figure 6 is Figure 5 a front cross-sectional view of the heat treatment chamber of

[0057] The heating chamber 3200 has a housing 3210, a cooling unit 3220, a heating unit 5000, and a transfer plate 3240.

[0058] The cooling unit 3220 has a cooling plate 3222. When viewed from the top, the cooling plate 3222 may have a circular shape. The cooling plate 3222 is provided with a cooling member 3224. According to an exemplary embodiment, the cooling member 3224 is formed inside the cooling plate 3222 and may be provided as a flow channel through which a cooling fluid flows.

[0059] The transfer plate 3240 is provided in a substantially disk shape and has a diameter corresponding to that of the substrate W. A notch 3244 is formed at the edge of the transfer plate 3240. The notch 3244 may have a shape corresponding to that of the protrusion 3429 formed on the hand A of the transfer robot 3420 described above. In addition, the notch 3244 is provided to correspond to the number of protrusions 3429 formed on the hand A and is formed at a position corresponding to the protrusion 3429. When the top and bottom positions of the hand A and the transfer plate 3240 are changed to a position where the hand A and the transfer plate 3240 are aligned in the vertical direction, the substrate W is transferred between the hand A and the transfer plate 3240. The transfer plate 3240 is mounted on a guide rail 3249 and moves along the guide rail 3249 by a driver 3246. The transfer plate 3240 is provided with a plurality of slit-shaped guide grooves 3242. The guide grooves 3242 extend from the end of the transfer plate 3240 to the inside of the transfer plate 3240. The longitudinal direction of the guide grooves 3242 is provided along the Y-axis direction 14, and the guide grooves 3242 are positioned to be spaced apart from each other along the X-axis direction 12. When transferring the substrate W between the transfer plate 3240 and the heating unit 5000, the guide grooves 3242 prevent the transfer plate 3240 from interfering with the lift pins.

[0060] Some of the heating units 5000 provided in the heat treatment chamber 3200 may supply a gas while heating the substrate W to improve the adhesion of the photoresist on the substrate W. According to an exemplary embodiment, the gas may be a surface modification gas. Hereinafter, an apparatus for supplying a gas capable of improving the adhesion of the photoresist on a substrate in the heating unit 5000 provided in the heat treatment chamber 3200 will be described as an example.

[0061] Figure 7 is a cross-sectional view of a substrate processing apparatus provided in Figure 6 the heating unit. Hereinafter, referring to Figure 7 FIG., the substrate processing apparatus provided to the heating unit 5000 includes a processing chamber 5010, a sealing member 5020, a support member 5030, a gas supply unit 5050, a concentration control unit 5060, an exhaust unit 5070, and a controller 5090.

[0062] The processing chamber 5010 has a processing space 5001 therein. The processing chamber 5010 can be set to a cylindrical shape. Alternatively, the processing chamber 5010 can be set to various shapes according to the design, such as a rectangular parallelepiped shape or the like. The processing chamber 5010 can include an upper chamber 5011 and a lower chamber 5013. The upper chamber 5010 and the lower chamber 5013 can be combined with each other to have the processing space 5001 therein.

[0063] When viewed from the top, the upper chamber 5011 can be set to a circular shape. The lower chamber 5013 can be located below the upper chamber 5011. When viewed from the top, the lower chamber 5013 can be set to a circular shape.

[0064] The driver 5015 can be coupled to the upper chamber 5011. The driver 5015 can vertically lift the upper chamber 5011. When transporting the substrate W into the processing chamber 5010, the driver 5015 can move the upper chamber 5011 upward to open the interior of the processing chamber 5010. In the process of processing the substrate W, the driver 5015 can seal the interior of the processing chamber 5010 by bringing the upper chamber 5011 into contact with the lower chamber 5013. In an exemplary embodiment, it is described that the driver 5015 is connected to the upper chamber 5011, but alternatively, the driver 5015 can be connected to the lower chamber 5013 to lift the lower chamber 5013.

[0065] The sealing member 5020 forms a seal between the processing space 5001 and the outside. The sealing member 5020 is provided on the contact surface between the upper chamber 5011 and the lower chamber 5013. As an example, the sealing member 5020 can be provided on the contact surface of the lower chamber 5013.

[0066] The support member 5030 can support the substrate W. The support member 5030 can support the substrate W in the processing space 5001. When viewed from the top, the support member 5030 can be set to a circular shape. The upper surface of the support member 5030 can have a cross-sectional area larger than that of the substrate W. The support member 5030 can be provided as a material with good thermal conductivity. The support member 5030 can be provided as a material with excellent heat resistance.

[0067] The support member 5030 can include a lift pin module 5032 for lifting the substrate W. The lift pin module 5032 can receive the substrate W from a transfer device outside the processing chamber 5010 to place the substrate W on the support member 5030, or lift the substrate W to transfer the substrate to a transfer device outside the processing chamber 5010. According to an exemplary embodiment, three lift pins of the lift pin module 5032 can be provided. The three lift pins can be arranged at equal intervals of 120 degrees.

[0068] In addition, the support member 5030 may include a heating member 5040 for heating the substrate W placed in the support member 5030. For example, the heating member 5040 may be located inside the support member 5030. For example, the heating member 5040 may be provided as a heater. A plurality of heaters may be provided in the support member 5030.

[0069] The gas supply unit 5050 may supply a surface modification gas to the substrate W located in the processing space 5001. For example, the surface modification gas includes an alkyne-based gas. The surface modification gas may change the surface property of the substrate W from hydrophilic to hydrophobic. In addition, the surface modification gas may also be provided as a mixed gas of an alkyne-based gas and a carrier gas. The carrier gas may be provided as an inert gas. For example, the inert gas may be nitrogen.

[0070] The gas supply unit 5050 may include a gas supply pipe 5051, a gas supply line 5053, and a bubbler tank 5054. The gas supply pipe 5051 may be connected to the central region of the upper chamber 5011. The gas supply pipe 5051 may supply the surface modification gas transmitted from the gas supply line 5053 to the substrate W. The supply position of the surface modification gas supplied by the gas supply pipe 5051 may be positioned to face the upper central region of the substrate W.

[0071] The gas supply line 5053 may be connected to the bubbler tank 5054. The gas supply line 5053 may transmit the surface modification gas generated by the bubbler tank 5054 to the gas supply pipe 5051. In addition, the gas supply line 5053 may be provided with a first valve 5056. The first valve 5056 may be an on / off valve or a flow control valve.

[0072] The bubbler tank 5054 may have an internal space in which an alkyne chemical is accommodated. In addition, a carrier gas supply line 5055 for supplying a carrier gas may be connected to the bubbler tank 5054. The carrier gas supply line 5055 supplies the carrier gas to the internal space of the bubbler tank 5054 to foam the alkyne chemical. As a result, the alkyne chemical is evaporated. The evaporated alkyne gas is mixed with the carrier gas and is delivered as a surface modification gas to the gas supply line 5053. The carrier gas may be provided as an inert gas. For example, the inert gas may be nitrogen. The bubbler tank 5054 is provided with a heater 5058. The heater 5058 may be embedded in the housing forming the bubbler tank 5054. The heater 5058 heats the alkyne chemical at a predetermined temperature.

[0073] The concentration control unit 5060 can control the concentration of the surface modification gas supplied to the processing space 5001. The concentration control unit 5060 can include a concentration control gas supply pipeline and a concentration measurement member. The concentration control gas supply pipeline can be connected to the gas supply pipeline 5053. For example, the concentration control gas supply pipeline can be connected downstream of the point where the first valve 5056 is provided. The concentration control gas supply pipeline can supply the concentration control gas to the gas supply pipeline 5053 while supplying the surface modification gas generated in the bubbler tank 5054 to the processing space 5001. Therefore, the concentration of the surface modification gas supplied to the processing space 5001 can be controlled. The concentration control gas can be an inert gas. For example, the concentration control gas can be nitrogen. In addition, the concentration control gas can be the same gas as the carrier gas.

[0074] In addition, a flow control valve is provided in the concentration control gas supply pipeline to control the opening rate of the flow control valve and change the supply flow rate per unit time of the concentration control gas supplied to the gas supply pipeline 5053.

[0075] The concentration measurement member can measure the concentration of the surface modification gas supplied to the processing space 5001. Here, the concentration of the surface modification gas refers to the concentration of the alkynyl gas contained in the surface modification gas. The concentration measurement member can be provided at a downstream position of the point where the gas supply pipeline 5053 and the concentration control gas supply pipeline are connected. The concentration measurement member can be applied to a known device for measuring gas concentration.

[0076] The exhaust unit 5070 can exhaust the processing space 5001. The exhaust unit 5070 can include an exhaust pipeline 5073, a main exhaust pipeline 5075, and a pressure reducing member 5075.

[0077] The exhaust unit 5073 can exhaust the processing space 5001. The exhaust pipeline 5073 can be connected to an exhaust port 5074 formed on the lower wall of the processing chamber 5010. As a result, the exhaust pipeline 5073 can discharge the atmosphere in the processing space 5001 downward. The exhaust port 5074 can be formed on the lower chamber 5013. The exhaust port 5074 can be located outside the support member 5030. A plurality of exhaust ports 5074 can be provided. The exhaust pipeline 5073 can be provided corresponding to the number of the exhaust ports 5074.

[0078] The main exhaust pipeline 5075 integrates and connects the exhaust pipeline 5073. The main exhaust pipeline 5075 is provided to discharge the exhaust material of the exhaust pipeline 5073 to the outside.

[0079] The pressure reducing member 5077 provides pressure reduction in the emission processing space 5001 and near the processing space 5001 simultaneously. The pressure reducing member 5077 can be provided in the main exhaust pipeline 5075. As an example, the pressure reducing member 5077 can be provided as a pump. Alternatively, the pressure reducing member 5077 can be provided as a known different type of device that provides pressure reduction.

[0080] The controller 5090 can control the gas supply unit 5050, the concentration control unit 5060, and the heater 5058. The controller 5090 can control the concentration control unit 5060 to control the concentration of the supplied surface modification gas when supplying the processing gas to the substrate W. For example, the controller 5090 can supply the concentration control gas to the gas supply pipeline 5053 while supplying the surface modification gas generated in the bubbler tank 5054 to the processing space 5001 to change the concentration of the surface modification gas. The controller 5090 can control the heater 5058 to heat the alkynyl chemical stored in the bubbler tank 5054.

[0081] Hereinafter, a method of processing a substrate by using the substrate processing apparatus according to an exemplary embodiment of the present invention will be described.

[0082] In the case of the alkynyl gas, compared with HMDS described in Table 1, there is a disadvantage of low vapor pressure. Regarding the vapor pressure, the vapor pressure increases at room temperature (20 °C), and the liquid material is volatile. The heater 5058 provided to the bubbler tank 5054 heats the alkynyl chemical to increase the low vapor pressure of the alkynyl gas. The alkynyl gas according to the exemplary embodiment is provided as 3,5-dimethyl-1-hexyne-3-ol.

[0083] [Table 1] Comparison between HMDS and 3,5-dimethyl-1-hexyne-3-ol as an example of alkynyl gas

[0084]

[0085] The controller 5090 controls the heater 5058 to heat the alkynyl chemical to a temperature just before reaching the boiling point. The temperature just before reaching the boiling point means a temperature that is 30 °C to 5 °C lower than the boiling point, preferably 10 °C to 5 °C lower, but not limited mathematically. According to the exemplary embodiment, the heater 5058 heats the 3,5-dimethyl-1-hexyne-3-ol supplied to the bubbler tank 5054 to 120 °C to 145 °C.

[0086] The controller 5090 supplies a carrier gas to the alkynyl gas heated in the bubbler tank 5054. The carrier gas causes the alkynyl chemical to foam. As a result, the heated alkynyl chemical is evaporated. The evaporated alkynyl gas is mixed with the carrier gas and supplied to the processing space 5001 through the gas supply line 5053. At this time, the first valve 5056 provided on the gas supply line 5053 is opened.

[0087] The controller 5090 can control the concentration control unit 5060 to control the concentration of the alkynyl gas contained in the surface modification gas while supplying the surface modification gas generated in the bubbler tank 5060 to the processing space 5001. For example, the controller 5090 can also supply a concentration control gas to the gas supply line 5053 via the concentration control gas supply line. The concentration control gas can be an inert gas. For example, the concentration control gas can be nitrogen. In addition, the concentration control gas can be the same gas as the carrier gas. Due to the supplied concentration control gas, the concentration of the surface modification gas can be reduced.

[0088] As another exemplary embodiment, the controller 5090 can control the supply flow rate per unit time of the concentration control gas to be further supplied to the gas supply line 5053 based on the concentration measurement value of the surface modification gas measured by the concentration measurement member provided in the gas supply line 5053. For example, when the measurement value of the concentration measurement member is higher than the set value, the supply flow rate per unit time of the concentration control gas can be increased. Therefore, the concentration of the alkynyl gas supplied to the processing space 5001 is reduced.

[0089] Figure 8 is a flowchart showing the process sequence of processing a substrate. Refer to Figure 8 , the process of processing the substrate may include a processing step (S01) of processing the substrate by supplying the above-mentioned processed surface modification gas to the substrate W and a purification step (S02) of discharging the remaining surface modification gas to the processing space after the processing step.

[0090] In the processing step (S01), the inside of the processing space 5001 is heated to a predetermined temperature. Thereafter, the upper chamber 5011 is lifted so that the processing space 5001 is opened to the outside. After transporting the substrate W into the processing space 5001, the substrate W is placed on the support member 5030. After placing the substrate W on the support member 5030, the upper chamber 5011 is lowered to seal the processing chamber 5010. After sealing the processing space 5001, the gas supply unit 5050 supplies the surface modification gas.

[0091] In the purification step (S02), the controller 5090 may close the first valve 5056 and supply a purification gas to the processing space 5001. The purification gas may be an inert gas. For example, the inert gas may be nitrogen. The purification gas introduced into the processing space 5001 allows the exhaust unit 5070 to effectively discharge the surface modification gas remaining in the processing space 5001. According to an exemplary embodiment of the present invention, the supply of the purification gas may be performed through a concentration control pipeline. The concentration control pipeline can not only control the concentration of the processing gas in the processing step (S01), but also discharge the remaining processing gas in the processing space 5001 to the outside of the processing space 5001 during the purification step (S02). Therefore, there is no need to install separate gas supply pipelines for each of the processing step (S01) and the purification step (S02), thereby simplifying the substrate processing equipment and reducing the manufacturing cost of the equipment.

[0092] According to an exemplary embodiment of the present invention, when the bubbler tank 5058 heats the alkynyl chemical, since excessive bubbling is not required by improving the low vapor pressure of the alkynyl solution, the processing time can be improved and the concentration of the alkynyl gas can be increased, thereby improving the adhesion. In addition, the concentration of the alkynyl gas contained in the surface modification gas supplied using the concentration control unit 5060 can be controlled to improve the adhesion and the time required for surface modification.

[0093] Return reference Figure 3 and Figure 4 A plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are provided between the indexing module 20 and the transfer chamber 3400. Hereinafter, these buffer chambers are referred to as front buffers 3802. A plurality of front buffers 3802 are provided and positioned to be stacked on top of each other in the vertical direction. Some of the buffer chambers 3802 and 3804 are provided between the transfer chamber 3400 and the interface module 40. Hereinafter, these buffer chambers are referred to as rear buffers 3804. A plurality of rear buffers 3804 are provided and positioned to be stacked on top of each other in the vertical direction. The front buffer 3802 and the rear buffer 3804 temporarily store a plurality of substrates W, respectively. The substrate W stored in the front buffer 3802 is carried in or out by the indexing robot 2200 and the transfer robot 3420. The substrate W stored in the rear buffer 3804 is carried in or out by the transfer robot 3420 and the first robot 4602.

[0094] The developing block 30b has a heat treatment chamber 3200, a transfer chamber 3400, and a liquid processing chamber 3600. The heat treatment chamber 3200, the transfer chamber 3400, and the liquid processing chamber 3600 of the developing block 30b are provided with substantially similar structures and layouts as those of the heat treatment chamber 3200, the transfer chamber 3400, and the liquid processing chamber 3600 of the coating block 30a, and thus, their descriptions will be omitted. However, in the developing block 30b, the liquid processing chambers 3600 are all provided as developing chambers 3600 for developing a substrate by supplying a developer.

[0095] The interface module 40 connects the processing module 30 to an external exposure apparatus 50. The interface module 40 has an interface frame 4100, an additional processing chamber 4200, an interface buffer 4400, and a transfer member 4600.

[0096] A fan filter unit may be provided at the upper end of the interface frame 4100 to form a downward atmosphere therein. The additional processing chamber 4200, the interface buffer 4400, and the interface robot 4600 are provided inside the interface frame 4100. The additional processing chamber 4200 may perform a predetermined additional process before transporting the substrate W, which has completed the process in the coating block 30a, into the exposure apparatus 50. Optionally, the additional processing chamber 4200 may perform a predetermined additional process before transporting the substrate W, which has completed the process in the exposure apparatus 50, into the developing block 30b. According to an example, the additional process may be an edge exposure process for exposing an edge region of the substrate W, an upper surface cleaning process for cleaning an upper surface of the substrate W, or a lower surface cleaning process for cleaning a lower surface of the substrate W. A plurality of additional processing chambers 4200 are provided and may be provided to be stacked on each other. All of the additional processing chambers 4200 may be provided to perform the same process. Optionally, some of the additional processing chambers 4200 may be provided to perform different processes.

[0097] The interface buffer 4400 provides a space in which the substrate W to be transferred between the coating block 30a, the additional processing chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer. A plurality of interface buffers 4400 are provided and the plurality of interface buffers 4400 may be provided to be stacked on each other.

[0098] According to an exemplary embodiment, based on the extension in the longitudinal direction of the transfer chamber 3400, the additional processing chamber 4200 may be provided on one side surface, and the interface buffer 4400 may be provided on the other side surface.

[0099] The interface robot 4600 transfers the substrate W between the coating block 30a, the additional processing chamber 4200, the exposure apparatus 50, and the developing block 30b. The interface robot 4600 may be provided with one or more robots. According to an exemplary embodiment, the transfer member 4600 has a first robot 4602 and a second robot 4606. The first robot 4602 transfers the substrate W between the coating block 30a, the additional processing chamber 4200, and the interface buffer 4400, and the second robot 4606 transfers the substrate W between the interface buffer 4400 and the exposure apparatus 50, and a second robot 4604 may be provided to transfer the substrate W between the interface buffer 4400 and the developing block 30b.

[0100] Each of the first robot 4602 and the second robot 4606 includes a hand on which the substrate W is placed, and the hand may be configured to move forward and backward, rotate about an axis parallel to the Z-axis direction 16, and move along the Z-axis direction 16.

[0101] In the above exemplary embodiment, a detailed description has been made with reference to a substrate processing apparatus according to an exemplary embodiment of the present invention. However, the present invention is not limited to the above examples and is applicable to all apparatuses for processing substrates.

[0102] In the above example, an example in which the upper exhaust hole 5073 is formed in the lower chamber 5013 has been described. However, differently, the upper exhaust hole 5073 may be formed in the upper chamber 5011.

[0103] In the above example, an example in which the supply flow rate per unit time of the concentration control gas supplied to the gas supply line 5053 is controlled by a flow control valve has been described. Differently, the supply flow rate per unit time of the concentration control gas may even be controlled by a known apparatus capable of controlling the supply flow rate of the gas per unit time.

[0104] The controller 5090 may control a substrate processing apparatus. The controller 5090 may control components of the substrate processing apparatus 5000 to process a substrate according to the setup process as described above. In addition, the controller 5090 may include a processor controller composed of a microprocessor (computer) that executes control of the substrate processing apparatus, a keyboard for performing command input operations, etc. to manage the substrate processing apparatus by an operator, a user interface including a display for visualizing and displaying the movement of the substrate processing apparatus, etc., and a storage unit for storing control programs or various data to execute processing performed in the substrate processing apparatus through control by a process controller and a program (i.e., a processing scheme that performs processing in each configuration unit according to processing conditions). In addition, the user interface and the storage unit may be connected to the process controller. The processing scheme may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk and may be a removable disk such as a CD-ROM, a DVD, etc., a semiconductor memory such as a flash memory, etc.

[0105] The foregoing detailed description illustrates the present invention. In addition, the above shows and describes exemplary embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, within the scope of the inventive concept disclosed in this specification, the scope equivalent to this disclosure, and / or within the scope of the knowledge of those skilled in the art, the foregoing can be modified or corrected. The foregoing exemplary embodiments describe the best state for implementing the technical spirit of the present invention, and various changes required for specific application fields and uses of the present invention are possible. Therefore, the above detailed description of the present invention is not intended to limit the present invention to the disclosed exemplary embodiments. In addition, the appended claims should be construed to also include other exemplary embodiments.

Claims

1. An apparatus for processing a substrate, comprising: A processing chamber configured to have a processing space therein; A support member located in the processing space to support the substrate; And A gas supply unit configured to supply a surface modification gas to the processing space, Wherein the gas supply unit includes: A bubbler tank provided with an accommodation space for storing a liquid alkyne chemical and configured to bubble the alkyne chemical by supplying an inert gas to the accommodation space to generate the surface modification gas; A heater configured to heat the alkyne chemical stored in the bubbler tank at a first temperature; And A gas supply pipeline connected between the processing chamber and the bubbler tank to supply the surface modification gas to the processing space, and the gas supply pipeline is provided with a first valve; Wherein the first temperature is the temperature just before the alkyne chemical reaches its boiling point.

2. The apparatus for processing a substrate according to claim 1, Wherein the gas supply unit further includes a concentration control unit configured to supply a concentration control gas for controlling the concentration of the alkyne chemical constituting the surface modification gas.

3. The apparatus for processing a substrate according to claim 2, Wherein the concentration control unit includes a concentration control gas supply pipeline connected to the gas supply pipeline to supply the concentration control gas to the gas supply pipeline.

4. The apparatus for processing a substrate according to claim 3, Wherein the concentration control unit further includes a concentration measuring member provided in the gas supply pipeline to measure the concentration of the surface modification gas.

5. The apparatus for processing a substrate according to claim 4, Wherein the concentration measuring member is provided in the gas supply pipeline at a downstream position of the point where the gas supply pipeline and the concentration control gas supply pipeline are connected to the gas supply pipeline.

6. The apparatus for processing a substrate according to claim 3, Wherein the gas supply pipeline further includes a carrier gas supply pipeline connected to the bubbler tank to supply the inert gas to the bubbler tank.

7. The apparatus for processing a substrate according to claim 6, further comprising: A controller configured to control the gas supply unit, Wherein the controller controls the heater to heat the alkyne chemical stored in the bubbler tank at the first temperature, and Controls the heater to supply the inert gas to the alkyne chemical heated at the first temperature to generate the surface modification gas.

8. The apparatus for processing a substrate according to claim 7, Wherein the controller further controls the concentration control unit, and Control the gas supply unit and the concentration control unit so as to control the concentration of the surface modification gas by supplying the concentration control gas to the gas supply line while supplying the surface modification gas to the processing space.

9. The apparatus for processing a substrate according to claim 1, wherein the first temperature is a temperature 30°C to 5°C lower than the boiling point of the alkynyl chemical.

10. The apparatus for processing a substrate according to claim 1, wherein the alkynyl chemical is 3,5-dimethyl-1-hexyn-3-ol.

11. The apparatus for processing a substrate according to claim 10, wherein the first temperature is 120°C to 145°C.

12. The apparatus for processing a substrate according to claim 1, further comprising: a heating member configured to heat the substrate placed on the support member; and an exhaust unit configured to exhaust the processing space.

13. The apparatus for processing a substrate according to claim 4, further comprising: a controller configured to control the concentration control unit, wherein the controller controls the supply flow rate per unit time of the concentration control gas based on the measurement value of the concentration measurement member, and increases the supply flow rate per unit time of the concentration control gas when the measurement value of the concentration measurement member is higher than a predetermined value.

14. The apparatus for processing a substrate according to claim 2, wherein the concentration control gas and the inert gas are the same gas.

15. The apparatus for processing a substrate according to claim 14, wherein the concentration control gas and the inert gas are nitrogen.

16. A method for processing a substrate, comprising: before coating a photoresist on the substrate, processing the substrate by supplying a surface modification gas for improving the adhesion of the photoresist to a processing space in which the substrate is disposed, wherein the surface modification gas is provided as a mixed gas of an alkynyl chemical and an inert gas, wherein the surface modification gas is generated by supplying the inert gas while heating the alkynyl chemical at a first temperature in a bubbler tank, and the alkynyl chemical is stored in the bubbler tank in a liquid state; and wherein the first temperature is a temperature just before the alkynyl chemical reaches its boiling point.

17. The method for processing a substrate according to claim 16, wherein the surface modification gas is supplied to the substrate by changing the concentration of the surface modification gas while supplying the surface modification gas to the processing space.

18. The method for processing a substrate according to claim 16, wherein the alkynyl chemical is 3,5-dimethyl-1-hexyn-3-ol and the first temperature is 120°C to 145°C.

19. An apparatus for processing a substrate, comprising: a processing chamber configured to have a processing space therein; a support member located in the processing space to support the substrate; A gas supply unit configured to supply a surface modification gas provided as a mixed gas of an alkynyl chemical and an inert gas to the processing space; A concentration control unit configured to supply a concentration control gas that controls the concentration of the alkynyl chemical constituting the surface modification gas; And A controller configured to control the gas supply unit and the concentration control unit, wherein the gas supply unit includes: A bubbler tank provided with an accommodation space for storing a liquid alkynyl chemical and configured to bubble the alkynyl chemical by supplying an inert gas to the accommodation space to generate the surface modification gas; A carrier gas supply line connected to the bubbler tank to supply the inert gas to the bubbler tank; A heater configured to heat the alkynyl chemical stored in the bubbler tank at a first temperature; and A gas supply line connected between the processing chamber and the bubbler tank to supply the surface modification gas to the processing space, and the gas supply line is provided with a first valve, wherein the controller controls the heater to supply the inert gas to the alkynyl chemical heated at the first temperature to generate the surface modification gas, and controls the gas supply unit and the concentration control unit so as to control the concentration of the surface modification gas by supplying the concentration control gas to the gas supply line while supplying the surface modification gas to the processing space; and wherein the first temperature is the temperature just before the alkynyl chemical reaches its boiling point.

Images