Transfer device and transfer method

Abstract

An embodiment of the present application provides a transfer device and a transfer method. The transfer device includes a sealing glue assembly, which includes a sealing glue top plate and a sealing glue bottom plate arranged oppositely, and a receiving cavity is formed between the sealing glue top plate and the sealing glue bottom plate; a transfer assembly and a carrying assembly arranged oppositely in the receiving cavity; the transfer assembly includes a transfer substrate and a thermosensitive glue layer, the thermosensitive glue layer is located on one side of the transfer substrate and is used for bonding a plurality of chips to be transferred, the sealing glue top plate is located on the other side of the transfer substrate, the carrying assembly includes a target substrate and a thermosetting conductive glue, the thermosetting conductive glue is located on one side of the target substrate, and the thermosetting conductive glue is used for bonding to the chips to be transferred and electrically connecting the chips to be transferred to the target substrate, the sealing glue bottom plate is located on the other side of the target substrate; wherein, the sealing glue assembly is used to fill the thermosetting glue in the receiving cavity so that the thermosetting glue fills the gap between two adjacent chips to be transferred.

Description

Technical Field

[0001] This application relates to the field of display technologies, and in particular, to a transfer device and a transfer method. Background Art

[0002] Mini-LED, namely the microscale technology of Light Emitting Diode (LED), refers to the technology of arraying and miniaturizing traditional LEDs and then transferring them in large quantities and addressing them onto a circuit board to form ultra-small pitch LEDs, further shrinking the millimeter-level LED length to the micron level to achieve ultra-high pixels and ultra-high resolution. Among them, Mini-LED has the characteristics of not requiring a backlight and being able to emit light by itself, similar to Organic Light-Emitting Diode (OLED). However, compared with OLED, Mini-LED colors are easier to accurately debug, have a longer luminous life and higher brightness, and have low packaging requirements, making it easier to achieve flexible and seamless splicing displays, and it is a future display with great development potential.

[0003] However, the existing large-scale transfer technology for Mini-LED needs to achieve the final transfer through multiple transfers of a transfer substrate, and then fix it on the circuit board through a conventional encapsulation method to complete the encapsulation, which will result in high manufacturing costs, low yield, and low efficiency of Mini-LED. Summary of the Invention

[0004] Embodiments of this application provide a transfer device and a transfer method to alleviate the deficiencies in related technologies.

[0005] To achieve the above functions, the technical solutions provided by the embodiments of this application are as follows:

[0006] Embodiments of this application provide a transfer device, including

[0007] An encapsulation component, including an encapsulation top plate and an encapsulation bottom plate arranged opposite to each other, and a receiving cavity is formed between the encapsulation top plate and the encapsulation bottom plate;

[0008] A transfer component, located in the receiving cavity, the transfer component includes a transfer substrate and a thermosensitive adhesive layer, the transfer substrate includes a first surface and a second surface arranged opposite to each other, the encapsulation top plate is located on the first surface of the transfer substrate, the thermosensitive adhesive layer is located on the second surface of the transfer substrate, and the thermosensitive adhesive layer is used for bonding a plurality of chips to be transferred;

[0009] A carrier component, located within the accommodation cavity, the carrier component includes a target substrate and a thermosetting conductive adhesive. The target substrate includes a third surface and a fourth surface disposed opposite to each other. The third surface is disposed opposite to the second surface. The thermosetting conductive adhesive is located on the third surface of the target substrate. The thermosetting conductive adhesive is used to bond the chip to be transferred and electrically connect the chip to be transferred to the target substrate. The encapsulation bottom plate is located on the fourth surface of the target substrate;

[0010] Wherein, the encapsulation component is used to fill the accommodation cavity with a thermosetting adhesive, so that the thermosetting adhesive fills the gap between two adjacent chips to be transferred.

[0011] In the transfer device provided by the embodiment of the present application, the thermosetting conductive adhesive is an anisotropic conductive adhesive, and the anisotropic conductive adhesive includes a high-temperature thermosetting epoxy resin adhesive and a plurality of conductive particles.

[0012] In the transfer device provided by the embodiment of the present application, the conductive particles include an insulating core, and a nickel shell, a gold shell and a protective layer that sequentially wrap the insulating core from the inside to the outside; wherein, when the chip to be transferred and the target substrate are pressed against each other, the protective layer ruptures in the direction from the encapsulation top plate to the encapsulation bottom plate, and the conductive particles after the rupture of the protective layer electrically connect the chip to be transferred to the target substrate.

[0013] In the transfer device provided by the embodiment of the present application, the transfer device further includes a vacuum pumping component, the vacuum pumping component is located on the side of the encapsulation top plate away from the transfer substrate, the vacuum pumping component is communicated with the accommodation cavity, and the vacuum pumping component is used to evacuate the air in the thermosetting adhesive and the thermosetting conductive adhesive.

[0014] In the transfer device provided by the embodiment of the present application, the transfer device further includes a heating component, the heating component is located outside the accommodation cavity, and the heating component is used to heat the thermosensitive adhesive layer, the thermosetting adhesive and the thermosetting conductive adhesive.

[0015] In the transfer device provided by the embodiment of the present application, the encapsulation component further includes a side frame disposed around the periphery of the encapsulation bottom plate, the encapsulation top plate is connected to the side frame, and the accommodation cavity is formed between the encapsulation top plate, the encapsulation bottom plate and the side frame;

[0016] Wherein, the side frame is provided with a glue filling hole, and the thermosetting adhesive is filled into the accommodation cavity through the glue filling hole.

[0017] The embodiment of the present application provides a transfer method, including the transfer device described in any one of the above, and the transfer method includes the following steps:

[0018] Bond multiple chips to be transferred using the thermosensitive adhesive layer on the transfer substrate;

[0019] Move the transfer substrate into the accommodation cavity, so that the thermosetting conductive adhesive of the carrier assembly bonds to the chips to be transferred and electrically connects the chips to the target substrate;

[0020] Fill the accommodation cavity with the thermosetting adhesive, so that the thermosetting adhesive fills the gap between two adjacent chips to be transferred;

[0021] Evacuate the air in the accommodation cavity and heat the sealing glue top plate and the sealing glue bottom plate.

[0022] In the transfer method provided by the embodiment of the present application, the thermosetting conductive adhesive is an anisotropic conductive adhesive, the anisotropic conductive adhesive includes a high-temperature thermosetting epoxy resin adhesive and a plurality of conductive particles, and the conductive particles include an insulating core, and a nickel shell, a gold shell and a protective layer that sequentially wrap the insulating core from the inside to the outside;

[0023] Before the step of filling the accommodation cavity with the thermosetting adhesive so that the thermosetting adhesive fills the gap between two adjacent chips to be transferred, the following steps are further included:

[0024] Apply pressure to the sealing glue top plate in the direction from the sealing glue top plate to the sealing glue bottom plate, so that the chips to be transferred and the target substrate are pressed against each other, and the protective layer ruptures in the direction from the chips to be transferred to the target substrate, and the conductive particles after the protective layer ruptures electrically connect the chips to be transferred to the target substrate.

[0025] In the transfer method provided by the embodiment of the present application, the sealing glue assembly further includes a side frame disposed around the periphery of the sealing glue bottom plate, the sealing glue top plate is connected to the side frame, and the accommodation cavity is formed between the sealing glue top plate, the sealing glue bottom plate and the side frame, and the side frame is provided with a glue filling hole;

[0026] The step of filling the accommodation cavity with the thermosetting adhesive so that the thermosetting adhesive fills the gap between two adjacent chips to be transferred includes:

[0027] Fill the accommodation cavity with the thermosetting adhesive through the glue filling hole, so that the thermosetting adhesive fills the gap between two adjacent chips to be transferred;

[0028] Remove the thermosetting adhesive in the glue filling hole.

[0029] In the transfer method provided by the embodiments of the present application, the transfer device further includes a vacuum pumping assembly and a heating assembly. The vacuum pumping assembly is located on the side of the encapsulation top plate away from the transfer substrate, and the vacuum pumping assembly communicates with the accommodation cavity. The heating assembly is located outside the accommodation cavity;

[0030] The steps of evacuating the air in the accommodation cavity and heating the encapsulation top plate and the encapsulation bottom plate include:

[0031] Using the vacuum pumping assembly to evacuate the air in the thermosetting adhesive and the thermosetting conductive adhesive, and using the heating assembly to heat the encapsulation top plate and the encapsulation bottom plate, so that the chip to be transferred detaches from the thermosensitive adhesive layer and falls above the third surface of the target substrate, and the thermosetting adhesive and the thermosetting conductive adhesive are cured.

[0032] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a transfer device and a transfer method. The transfer device includes an encapsulation assembly, a transfer assembly, and a carrying assembly. The encapsulation assembly includes an encapsulation top plate and an encapsulation bottom plate arranged oppositely, and an accommodation cavity is formed between the encapsulation top plate and the encapsulation bottom plate; both the transfer assembly and the carrying assembly are located in the accommodation cavity; the transfer assembly includes a transfer substrate and a thermosensitive adhesive layer, the thermosensitive adhesive layer is located on one side of the transfer substrate and is used for bonding a plurality of chips to be transferred, the encapsulation top plate is located on the other side of the transfer substrate, the carrying assembly includes the target substrate and the thermosetting conductive adhesive, the thermosetting conductive adhesive is located on one side of the target substrate, and the thermosetting conductive adhesive is used for bonding with the chip to be transferred and electrically connecting the chip to be transferred with the target substrate, and the encapsulation bottom plate is located on the other side of the target substrate; wherein, the encapsulation assembly is used to fill the thermosetting adhesive in the accommodation cavity to make the thermosetting adhesive fill the gap between two adjacent chips to be transferred; in the transfer method, in the embodiments of the present application, by heating the thermosensitive adhesive layer, the thermosetting adhesive, and the thermosetting conductive adhesive, the chip to be transferred detaches from the thermosensitive adhesive layer and falls above the carrying substrate, completing the transfer of the chip to be transferred, and at the same time curing the thermosetting adhesive and the thermosetting conductive adhesive, thereby completing the transfer and encapsulation of the chip to be transferred, and further improving the transfer efficiency and the packaging yield. Description of the Drawings

[0033] The following will make the technical solutions and other beneficial effects of the present application obvious by describing the specific embodiments of the present application in detail in conjunction with the drawings.

[0034] Figure 1 It is a cross-sectional schematic view of the transfer device provided by the embodiments of the present application;

[0035] Figure 2 isFigure 1 Enlarged view at A-A in

[0036] Figure 3 Flowchart of the transfer method provided by the embodiment of the present application;

[0037] Figures 4A to 4D is Figure 3 Process flowchart of the transfer method in Specific implementation manners

[0038] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device.

[0039] The embodiment of the present application provides a transfer device and a transfer method. The following will be described in detail respectively. It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments.

[0040] Please refer to Figures 1 to 4D , the embodiment of the present application provides a transfer device and a transfer method, and the transfer device 1 includes:

[0041] The encapsulation component 10 includes an encapsulation top plate 11 and an encapsulation bottom plate 12 arranged oppositely, and a receiving cavity 100 is formed between the encapsulation top plate 11 and the encapsulation bottom plate 12;

[0042] The transfer component 20 is located in the receiving cavity 100. The transfer component 20 includes a transfer substrate 21 and a thermosensitive adhesive layer 22. The transfer substrate 21 includes a first surface 211 and a second surface 212 arranged oppositely. The encapsulation top plate 11 is located on the first surface 211 of the transfer substrate 21, and the thermosensitive adhesive layer 22 is located on the second surface 212 of the transfer substrate 21. The thermosensitive adhesive layer 22 is used for bonding a plurality of chips 23 to be transferred;

[0043] The carrier component 30 is located within the accommodation cavity 100. The carrier component 30 includes a target substrate 31 and a thermosetting conductive adhesive 32. The target substrate 31 includes a third surface 311 and a fourth surface 312 that are oppositely arranged. The third surface 311 is oppositely arranged with the second surface 212. The thermosetting conductive adhesive 32 is located on the third surface 311 of the target substrate 31. The thermosetting conductive adhesive 32 is used to bond the chip 23 to be transferred and electrically connect the chip 23 to be transferred with the target substrate 31. The encapsulation bottom plate 12 is located on the fourth surface 312 of the target substrate 31;

[0044] Wherein, the encapsulation component 10 is used to fill the thermosetting adhesive 40 within the accommodation cavity 100, so that the thermosetting adhesive 40 fills the gap between two adjacent chips 23 to be transferred.

[0045] It should be noted that, in the embodiment of the present application, by arranging the thermosensitive adhesive layer 22 on one side of the transfer substrate 21 and being used to bond multiple chips 23 to be transferred. Therefore, when the thermosensitive adhesive layer 22 is heated, the chips 23 to be transferred can be separated from the thermosensitive adhesive layer 22 and fall onto the third surface 311 of the target substrate 31, thereby completing the transfer of the chips 23 to be transferred; at the same time, in the embodiment of the present application, by arranging the thermosetting conductive adhesive 32 on one side of the target substrate 31, the thermosetting conductive adhesive 32 is used to bond the chip 23 to be transferred and electrically connect the chip 23 to be transferred with the target substrate 31, and the encapsulation component 10 is used to fill the thermosetting adhesive 40 within the accommodation cavity 100, so that the thermosetting adhesive 40 fills the gap between two adjacent chips 23 to be transferred. Therefore, when the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are heated, the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured, thereby completing the encapsulation of the chips 23 to be transferred.

[0046] It can be understood that, compared with the existing mass transfer technology, after the transfer of the chips to be transferred is completed by a transfer device, it is necessary to perform front encapsulation on the substrate with the chips, then cut or grind the substrate after front encapsulation, and finally perform side encapsulation on the cut substrate. However, during the cutting process, the metal lines on the side of the substrate will be exposed to water and humid air to varying degrees. At this time, the substrate must be immediately transferred into a nitrogen bag / vacuum bag containing sufficient desiccant until it can be transferred out for the next process before side encapsulation. It can be understood that this frequent transfer of the substrate into and out of the nitrogen bag / vacuum bag containing sufficient desiccant is time-consuming and laborious, resulting in high manufacturing costs, low yield, and low efficiency.

[0047] Continuing from the above, after heating the thermosensitive adhesive layer 22, the thermosetting adhesive 40, and the thermosetting conductive adhesive 32 in the embodiments of the present application, the chip 23 to be transferred is separated from the thermosensitive adhesive layer 22 and lands on the third surface 311 of the target substrate 31. At the same time, the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured, thereby completing the transfer and encapsulation of the chip 23 to be transferred, and further achieving the effect of improving the transfer efficiency and packaging yield.

[0048] The technical solution of the present application will now be described in conjunction with specific embodiments.

[0049] In one embodiment, please refer to Figure 1 and Figure 2 ; wherein, Figure 1 is a schematic cross-sectional view of the transfer device provided by the embodiments of the present application; Figure 2 is Figure 1 the enlarged view at A-A in

[0050] This embodiment provides a transfer device 1, the transfer device 1 includes a sealing glue assembly 10, a transfer assembly 20, and a bearing assembly 30. The sealing glue assembly 10 includes a sealing glue top plate 11 and a sealing glue bottom plate 12, and an accommodating cavity 100 is formed between the sealing glue top plate 11 and the sealing glue bottom plate 12.

[0051] Specifically, the sealing glue assembly 10 includes the sealing glue top plate 11 and the sealing glue bottom plate 12 arranged oppositely, and a side frame 13 arranged around the periphery of the sealing glue bottom plate 12. The sealing glue top plate 11 is connected to the side frame 13, and the accommodating cavity 100 is formed among the sealing glue top plate 11, the sealing glue bottom plate 12, and the side frame 13.

[0052] The transfer assembly 20 is located in the accommodating cavity 100. The transfer assembly 20 includes a transfer substrate 21 and a thermosensitive adhesive layer 22. The transfer substrate 21 includes a first surface 211 and a second surface 212 arranged oppositely. The sealing glue top plate 11 is located on the first surface 211 of the transfer substrate 21, and the thermosensitive adhesive layer 22 is located on the second surface 212 of the transfer substrate 21. The thermosensitive adhesive layer 22 is used for bonding a plurality of chips 23 to be transferred; it should be noted that the transfer substrate 21 can be a blue film, and the chips 23 to be transferred include but are not limited to micro light-emitting diodes (Mini-Light-Emitting Diode, Mini-LED). Among them, the blue film material is a stretchable material, and according to the actual application situation, the blue film can be stretched and deformed in a plane to increase the distance between adjacent chips 23 to be transferred.

[0053] The carrier component 30 includes a target substrate 31 and a thermosetting conductive adhesive 32. The target substrate 31 includes a third surface 311 and a fourth surface 312 that are oppositely arranged. The third surface 311 is oppositely arranged with the second surface 212. The thermosetting conductive adhesive 32 is located on the third surface 311 of the target substrate 31. The thermosetting conductive adhesive 32 is used to bond the chip 23 to be transferred and electrically connect the chip 23 to be transferred with the target substrate 31. The sealing glue bottom plate 12 is located on the fourth surface 312 of the target substrate 31. It should be noted that the target substrate 31 includes, but is not limited to, a circuit substrate, and this embodiment does not make specific limitations on this.

[0054] Specifically, the thermosetting conductive adhesive 32 is an anisotropic conductive film (ACF for short). The thermosetting conductive adhesive 32 includes a high-temperature thermosetting epoxy resin glue doped with carbon powder with high temperature resistance, water vapor resistance, and low linear expansion coefficient, and a plurality of conductive particles 321 that are evenly distributed in the high-temperature thermosetting epoxy resin glue and insulated from each other.

[0055] The conductive particle 321 includes an insulating core, and a nickel shell, a gold shell, and a protective layer that sequentially wrap the insulating core from the inside to the outside. When the chip 23 to be transferred and the target substrate 31 are pressed against each other, the protective layer ruptures in the direction from the sealing glue top plate 11 to the sealing glue bottom plate 12. The conductive particle 321 after the protective layer ruptures electrically connects the chip 23 to be transferred with the target substrate 31. Among them, the insulating core includes, but is not limited to, a plastic core, and the protective layer includes, but is not limited to, an oxide protective layer.

[0056] It should be noted that in this embodiment, one side of the chip 23 to be transferred close to the target substrate 31 includes an electrode 231. One side of the target substrate 31 close to the chip 23 includes a pad (not shown in the figure) corresponding to the electrode 231. The electrode 231 is electrically connected to the pad through the conductive particle 321. It can be understood that this embodiment does not make specific limitations on the number of the conductive particles 321 provided between the electrode 231 and the pad. The pad includes, but is not limited to, a tin pad.

[0057] In this embodiment, the conductive particles 321 include, but are not limited to, metal particles or particles with unidirectional conductivity. Preferably, the conductive particles 321 are particles with unidirectional conductivity. The particles with unidirectional conductivity conduct electricity along the first direction Y and are insulated along the second direction X. Here, the first direction Y is the direction in which the encapsulation top plate 11 points to the encapsulation bottom plate 12 and ruptures, and the second direction X is perpendicular to the first direction Y. After the conductive particles 321 are pressed and ruptured along the first direction Y, they are used to conduct the electrode 231 and the pad. It should be noted that in this embodiment, the first direction is Figure 1 the Y direction in Figure 1 Figure 1 , and the second direction is

[0058] the X direction in

[0059] In the prior art, the chip 23 to be transferred is usually bonded to the pad of the target substrate 31 by epoxy solder paste. During the melting process of the solder paste, it is easy to cause the short circuit of the P electrode and the N electrode of the chip 23, thus leading to the failure of the product. It can be understood that in this embodiment, by setting the conductive particles as particles with unidirectional conductivity, the particles with unidirectional conductivity conduct electricity along the first direction Y and are insulated along the second direction X, which can avoid the problem of short circuit caused by using solder paste in the prior art.

[0060] It can be understood that in this embodiment, the encapsulation assembly 10 is used to transfer the chip 23 to be transferred and is also used to encapsulate the chip 23 to be transferred.

[0061] Furthermore, the transfer device 1 further includes a heating assembly (not shown in the figure). The heating assembly is located outside the accommodation cavity 100. The heating assembly is used to heat the thermosensitive adhesive layer 22, the thermosetting adhesive 40, and the thermosetting conductive adhesive 32, so that the chip 23 to be transferred is separated from the thermosensitive adhesive layer 22 and falls above the third surface 311 of the target substrate 31. At the same time, the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured.

[0062] Optionally, the heating component includes a first heating member and a second heating member. The first heating member is located on the side of the encapsulation top plate 11 away from the transfer substrate 21, and the second heating member is located on the side of the encapsulation bottom plate 12 away from the target substrate 31. The first heating member is used to heat the thermosensitive adhesive layer 22 so that the chip 23 to be transferred detaches from the thermosensitive adhesive layer 22 and lands above the third surface 311 of the target substrate 31, thereby completing the transfer of the chip 23 to be transferred. The second heating member is used to heat the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 so that the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured, thereby completing the encapsulation of the chip 23 to be transferred. It should be noted that in this embodiment, the position and structure of the heating component are not specifically limited.

[0063] It can be understood that in this embodiment, by providing the thermosensitive adhesive layer 22 for bonding multiple chips 23 to be transferred, the thermosetting conductive adhesive 32 for bonding with the chip 23 to be transferred and electrically connecting the chip 23 to be transferred with the target substrate 31, and the thermosetting adhesive 40 for filling the gap between two adjacent chips 23 to be transferred. Therefore, after heating the thermosensitive adhesive layer 22, the thermosetting adhesive 40, and the thermosetting conductive adhesive 32, the chip 23 to be transferred can be detached from the thermosensitive adhesive layer 22 and land above the third surface 311 of the target substrate 31, and the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 can be cured, thereby completing the transfer and encapsulation of the chip 23 to be transferred, and further achieving the effect of improving the transfer efficiency and the encapsulation yield.

[0064] It should be noted that the transfer device 1 further includes a vacuum pumping assembly 50. The vacuum pumping device is located on the side of the encapsulation top plate 11 away from the transfer substrate 21. The vacuum pumping assembly 50 is communicated with the accommodation cavity 100. The vacuum pumping assembly 50 is used to pump out the air in the thermosetting adhesive 40 and the thermosetting conductive adhesive 32. Specifically, when heating the thermosensitive adhesive layer 22, the thermosetting adhesive 40, and the thermosetting conductive adhesive 32, the air in the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 can be pumped out through the vacuum pumping assembly 50, thereby preventing the air from corroding the chip 23 to be transferred.

[0065] Please refer to Figure 3 、and Figures 4A to 4D ; wherein, Figure 3 The flowchart of the transfer method provided by the embodiment of the present application; Figures 4A to 4D is Figure 3 The process flowchart of the transfer method in

[0066] This embodiment provides a transfer method, including the transfer device described in any of the above. It can be understood that the transfer device has been described in detail in the above embodiments and will not be repeated here.

[0067] The transfer method includes the following steps:

[0068] Step S100: Bond a plurality of chips 23 to be transferred using the thermosensitive adhesive layer 22 on the transfer substrate 21.

[0069] Specifically, in this embodiment, before step S100, the following steps are further included:

[0070] Step S11: Provide a carrier substrate, on which a plurality of chips 23 to be transferred are provided. Among them, the substrate of the carrier substrate can be made of materials such as glass, which is not limited here. The chips 23 to be transferred are connected to the carrier substrate by any one of electrostatic adsorption, glue adsorption, and magnetic adsorption.

[0071] Step S12: Fit the thermosensitive adhesive layer 22 with the chips 23 to be transferred, so that the chips 23 to be transferred on the carrier substrate are bonded to the transfer substrate 21.

[0072] Step S200: Move the transfer substrate 21 into the accommodation cavity 100, so that the thermosetting conductive adhesive 32 of the carrier assembly 30 is bonded to the chips 23 to be transferred and the chips 23 are electrically connected to the target substrate 31.

[0073] Specifically, in this embodiment, in step S200, the following steps are included:

[0074] Step S201: Move the transfer substrate 21 into the accommodation cavity 100, so that the first surface 211 of the transfer substrate 21 is fitted with the sealing glue top plate 11.

[0075] Step S202: Move the target substrate 31 into the accommodation cavity 100, so that the fourth surface 312 of the target substrate 31 is fitted with the sealing glue bottom plate 12.

[0076] Step S203: Coating the thermosetting conductive adhesive 32 on the side of the target substrate 31 away from the sealing glue bottom plate 12 through a dispensing process.

[0077] Step S204: Align the encapsulation top plate 11 and the encapsulation bottom plate 12 so that the transfer assembly 20 and the carrier assembly 30 are in mutual contact. Among them, the second surface 212 of the transfer substrate 21 is disposed opposite to the third surface 311 of the target substrate 31, so that the thermosetting conductive adhesive 32 of the carrier assembly 30 adheres to the chip 23 to be transferred and electrically connects the chip 23 to the target substrate 31, as Figure 4A shown.

[0078] Step S300: Fill the thermosetting adhesive 40 into the accommodation cavity 100 so that the thermosetting adhesive 40 fills the gaps between adjacent chips 23 to be transferred, as Figure 4C shown.

[0079] Specifically, the material of the thermosetting adhesive 40 includes but is not limited to a high-temperature thermosetting epoxy resin adhesive doped with carbon powder. The encapsulation assembly 10 further includes a side frame 13 disposed around the periphery of the encapsulation bottom plate 12. The encapsulation top plate 11 is connected to the side frame 13. An accommodation cavity 100 is formed between the encapsulation top plate 11, the encapsulation bottom plate 12 and the side frame 13. The side frame 13 is provided with a glue injection hole 131.

[0080] In the step S300, the following steps are included:

[0081] Step S301: Fill the thermosetting adhesive 40 into the accommodation cavity 100 through the glue injection hole 131 so that the thermosetting adhesive 40 fills the gaps between adjacent chips 23 to be transferred.

[0082] Step S302: Remove the thermosetting adhesive 40 in the glue injection hole 131.

[0083] It can be understood that in this embodiment, there is no specific limitation on the method of filling the thermosetting adhesive 40 into the accommodation cavity 100 through the glue injection hole 131; by removing the thermosetting adhesive 40 in the glue injection hole 131, it is avoided that the thermosetting adhesive 40 in the glue injection hole 131 cures in subsequent processes, thereby affecting the process of the transfer method.

[0084] It should be noted that in this embodiment, the thermosetting conductive adhesive 32 is an anisotropic conductive adhesive. The anisotropic conductive adhesive includes a high-temperature thermosetting epoxy resin adhesive and a plurality of conductive particles 321. The conductive particles 321 include an insulating core, and a nickel shell, a gold shell and a protective layer that are sequentially wrapped around the insulating core from the inside to the outside.

[0085] Before the step S300, the following steps are further included:

[0086] Step S31: Apply pressure to the encapsulation top plate 11 in the direction from the encapsulation top plate 11 towards the encapsulation bottom plate 12, so that the chip 23 to be transferred and the target substrate 31 are pressed against each other, and the protective layer ruptures in the direction from the chip 23 to be transferred towards the target substrate 31. After the protective layer ruptures, the conductive particles 321 electrically connect the chip 23 to be transferred and the target substrate 31.

[0087] Among them, one side of the chip 23 to be transferred close to the target substrate 31 includes electrodes 231, and one side of the target substrate 31 close to the chip 23 includes pads (not shown in the figure) corresponding to the electrodes 231. The electrodes 231 are electrically connected to the pads through the conductive particles after the protective layer ruptures.

[0088] Specifically, the conductive particles 321 are particles with unidirectional conductivity. The particles with unidirectional conductivity conduct electricity in the first direction Y and are insulated in the second direction X. Specifically, the first direction Y is perpendicular to the target substrate 31, and the second direction X is perpendicular to the first direction Y. In this embodiment, by applying pressure to the encapsulation top plate 11 in the direction from the transfer assembly 20 towards the carrier assembly 30, the conductive particles 321 are pressed and ruptured in the first direction Y to conduct the electrodes 231 and the pads, as Figure 4B shown; it should be noted that the pressure applied to the encapsulation top plate 11 is not less than 1.8 KG, and this embodiment does not make specific limitations on this.

[0089] Step S400: Evacuate the air in the accommodation cavity 100, and heat the encapsulation top plate 11 and the encapsulation bottom plate 12.

[0090] In this embodiment, the transfer device 1 further includes a vacuum pumping assembly 50 and a heating assembly 60. The vacuum pumping assembly 50 is located on the side of the encapsulation top plate 11 away from the transfer substrate 21, and the vacuum pumping assembly 50 is communicated with the accommodation cavity 100. The heating assembly 60 is located outside the accommodation cavity 100. In the step S400, the following steps are further included:

[0091] Step S401: Use the vacuum pumping assembly 50 to evacuate the air in the thermosetting adhesive 40 and the thermosetting conductive adhesive 32, and use the heating assembly 60 to heat the encapsulation top plate 11 and the encapsulation bottom plate 12, so that the chip 23 to be transferred detaches from the thermosensitive adhesive layer 22 and lands above the third surface 311 of the target substrate 31, and the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured, as Figure 4D shown.

[0092] Among them, the heating component 60 includes a first heating member 61 and a second heating member 62. The first heating member 61 is located on the side of the encapsulation top plate 11 away from the transfer substrate 21, and the second heating member 62 is located on the side of the encapsulation bottom plate 12 away from the target substrate 31. The first heating member 61 is used to heat the thermosensitive adhesive layer 22, so that the chip 23 to be transferred is separated from the thermosensitive adhesive layer 22 and falls on the third surface 311 of the target substrate 31, thereby completing the transfer of the chip 23 to be transferred. The second heating member 62 is used to heat the thermosetting adhesive 40 and the thermosetting conductive adhesive 32, so that the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured, thereby completing the encapsulation of the chip 23 to be transferred; it should be noted that in this embodiment, the position and structure of the heating component 60 are not specifically limited.

[0093] It can be understood that in this embodiment, by setting the chip 23 to be transferred to be fixed to the second surface 212 through the thermosensitive adhesive layer 22, the chip 23 to be transferred is in contact with the thermosetting conductive adhesive 32, and the thermosetting adhesive 40 covers the gap between two adjacent chips 23 to be transferred. After heating the thermosensitive adhesive layer 22, the thermosetting adhesive 40, and the thermosetting conductive adhesive 32 through the heating component 60, the chip 23 to be transferred can be separated from the thermosensitive adhesive layer 22 and fall above the third surface 311 of the target substrate 31. At the same time, the thermosetting adhesive 40 and the thermosetting conductive adhesive 32 are cured, thereby completing the transfer and encapsulation of the chip 23 to be transferred, and further achieving the effect of improving the transfer efficiency and packaging yield.

[0094] Continuing from the above, in this embodiment, by setting the conductive particles 321 to be particles with unidirectional conductivity, the conductive particles 321 are used to conduct the electrode 231 and the pad after being pressed and broken along the first direction Y, which can avoid the problem of short circuit caused by using solder paste in the prior art.

[0095] It should be noted that in this embodiment, the transfer method further includes step S500: removing the encapsulation component 10 and the transfer component 20, and forming a black film on the side of the chip 23 to be transferred away from the target substrate 31. The black film covers the chip 23 to be transferred, thereby obtaining a display panel with high ink color consistency.

[0096] In summary, the present application provides a transfer device and a transfer method. The transfer device includes a sealing glue component, a transfer component, and a carrying component. The sealing glue component includes a sealing glue top plate and a sealing glue bottom plate which are oppositely arranged, and a receiving cavity is formed between the sealing glue top plate and the sealing glue bottom plate; both the transfer component and the carrying component are located in the receiving cavity; the transfer component includes a transfer substrate and a thermosensitive glue layer, the thermosensitive glue layer is located on one side of the transfer substrate and is used for bonding a plurality of chips to be transferred, the sealing glue top plate is located on the other side of the transfer substrate, the carrying component includes the target substrate and the thermosetting conductive glue, the thermosetting conductive glue is located on one side of the target substrate, the thermosetting conductive glue is used for bonding to the chips to be transferred and electrically connecting the chips to be transferred to the target substrate, and the sealing glue bottom plate is located on the other side of the target substrate; wherein, the sealing glue component is used for filling thermosetting glue in the receiving cavity so that the thermosetting glue fills the gap between two adjacent chips to be transferred; in the transfer method, in the embodiments of the present application, by heating the thermosensitive glue layer, the thermosetting glue, and the thermosetting conductive glue, the chips to be transferred are separated from the thermosensitive glue layer and fall above the carrying substrate, completing the transfer of the chips to be transferred, and at the same time curing the thermosetting glue and the thermosetting conductive glue, thereby completing the transfer and sealing of the chips to be transferred, and further improving the transfer efficiency and packaging yield.

[0097] In the above embodiments, the descriptions of the respective embodiments have their own focuses. For parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0098] The above has introduced in detail a transfer device and a transfer method provided by the embodiments of the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A transfer device, characterized in that, it includes; A glue-sealing component, including a glue-sealing top plate and a glue-sealing bottom plate arranged oppositely, and a receiving cavity is formed between the glue-sealing top plate and the glue-sealing bottom plate; A transfer component, located in the receiving cavity, the transfer component includes a transfer substrate and a thermosensitive adhesive layer, the transfer substrate includes a first surface and a second surface arranged oppositely, the glue-sealing top plate is located on the first surface of the transfer substrate, the thermosensitive adhesive layer is located on the second surface of the transfer substrate, and the thermosensitive adhesive layer is used for bonding a plurality of chips to be transferred; A carrying component, located in the receiving cavity, the carrying component includes a target substrate and a thermosetting conductive adhesive, the target substrate includes a third surface and a fourth surface arranged oppositely, the third surface is arranged oppositely to the second surface, the thermosetting conductive adhesive is located on the third surface of the target substrate, and the thermosetting conductive adhesive is used for bonding with the chip to be transferred and electrically connecting the chip to be transferred with the target substrate, and the glue-sealing bottom plate is located on the fourth surface of the target substrate; wherein, the glue-sealing component is used for filling a thermosetting glue in the receiving cavity so that the thermosetting glue fills the gap between two adjacent chips to be transferred.

2. The transfer device according to claim 1, characterized in that, the thermosetting conductive adhesive is an anisotropic conductive adhesive, and the anisotropic conductive adhesive includes a high-temperature thermosetting epoxy resin adhesive and a plurality of conductive particles.

3. The transfer device according to claim 2, characterized in that, the conductive particles include an insulating core and a nickel shell, a gold shell and a protective layer sequentially wrapped around the insulating core from inside to outside; wherein, when the chip to be transferred and the target substrate are pressed against each other, the protective layer ruptures along the direction from the glue-sealing top plate to the glue-sealing bottom plate, and the conductive particles after the protective layer ruptures electrically connect the chip to be transferred with the target substrate.

4. The transfer device according to claim 1, characterized in that, the transfer device further includes a vacuum pumping component, the vacuum pumping component is located on the side of the glue-sealing top plate away from the transfer substrate, the vacuum pumping component is communicated with the receiving cavity, and the vacuum pumping component is used for pumping out the air in the thermosetting glue and the thermosetting conductive adhesive.

5. The transfer device according to claim 1, characterized in that, the transfer device further includes a heating component, the heating component is located outside the receiving cavity, and the heating component is used for heating the thermosensitive adhesive layer, the thermosetting glue and the thermosetting conductive adhesive.

6. The transfer device according to claim 1, characterized in that, the glue-sealing component further includes a side frame arranged around the periphery of the glue-sealing bottom plate, the glue-sealing top plate is connected to the side frame, and the receiving cavity is formed between the glue-sealing top plate, the glue-sealing bottom plate and the side frame; wherein, the side frame is provided with a glue filling hole, and the thermosetting glue is filled into the receiving cavity through the glue filling hole.

7. A transfer method, characterized in that, using the transfer device according to any one of claims 1-6, the transfer method includes the following steps: Bond a plurality of chips to be transferred using the thermosensitive adhesive layer on the transfer substrate; Move the transfer substrate into the accommodation cavity, such that the thermosetting conductive adhesive of the carrier assembly bonds to the chips to be transferred and electrically connects the chips to the target substrate; Fill the accommodation cavity with the thermosetting adhesive, such that the thermosetting adhesive fills the gaps between adjacent chips to be transferred; Extract the air from the accommodation cavity and heat the sealant top plate and the sealant bottom plate.

8. The transfer method according to claim 7, wherein, the thermosetting conductive adhesive is an anisotropic conductive adhesive, the anisotropic conductive adhesive includes a high-temperature thermosetting epoxy resin adhesive and a plurality of conductive particles, and the conductive particles include an insulating core, and a nickel shell, a gold shell, and a protective layer that sequentially wrap the insulating core from the inside to the outside; Before the step of filling the accommodation cavity with the thermosetting adhesive, such that the thermosetting adhesive fills the gaps between adjacent chips to be transferred, the following steps are further included: Apply pressure to the sealant top plate in the direction from the sealant top plate to the sealant bottom plate, such that the chips to be transferred and the target substrate are pressed against each other, and the protective layer ruptures in the direction from the chips to be transferred to the target substrate, and the conductive particles after the rupture of the protective layer electrically connect the chips to be transferred to the target substrate.

9. The transfer method according to claim 7, wherein, the sealant assembly further includes a side frame disposed around the periphery of the sealant bottom plate, the sealant top plate is connected to the side frame, an accommodation cavity is formed between the sealant top plate, the sealant bottom plate, and the side frame, and the side frame is provided with a glue filling hole; The step of filling the accommodation cavity with the thermosetting adhesive, such that the thermosetting adhesive fills the gaps between adjacent chips to be transferred, includes: Fill the accommodation cavity with the thermosetting adhesive using the glue filling hole, such that the thermosetting adhesive fills the gaps between adjacent chips to be transferred; Remove the thermosetting adhesive in the glue filling hole.

10. The transfer method according to claim 7, wherein, the transfer device further includes a vacuum extraction assembly and a heating assembly, the vacuum extraction assembly is located on the side of the sealant top plate away from the transfer substrate, the vacuum extraction assembly communicates with the accommodation cavity, and the heating assembly is located outside the accommodation cavity; The step of extracting the air from the accommodation cavity and heating the sealant top plate and the sealant bottom plate includes: Extract the air from the thermosetting adhesive and the thermosetting conductive adhesive using the vacuum extraction assembly, and heat the sealant top plate and the sealant bottom plate using the heating assembly, such that the chips to be transferred are separated from the thermosensitive adhesive layer and fall above the third surface of the target substrate, and the thermosetting adhesive and the thermosetting conductive adhesive are cured.

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