Flow measurement method and substrate processing device

Abstract

The present invention provides a flow measurement method and a substrate processing apparatus that can use branching gas piping to perform flow diversion and accurately measure the flow rate of the branched gas flowing into a processing chamber. The flow measurement method measures the flow rate of gas in a substrate processing apparatus, the substrate processing apparatus comprising: a gas supply piping for supplying gas; a plurality of branching gas pipings branching from the gas supply piping; a metal window connected to the plurality of branching gas pipings; and a showerhead disposed at the bottom of the metal window and having a gas discharge hole for allowing the gas to pass through the metal window. The flow measurement method comprises the steps of disposing a flow meter at the supply port of the metal window connected to the plurality of branching gas pipings, and using the flow meter to measure the flow rate of the gas flowing through the supply port of the metal window.

Description

Technical Field

[0001] The invention relates to a flow measurement method and a substrate processing device. Background Art

[0002] For example, Patent Document 1 proposes installing a flow controller in a branch pipe portion communicating with a gas diffusion chamber having a gas discharge hole group, and inspecting a shower head by measuring the pressure inside the branch pipe.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-29153. Summary of the Invention

[0006] Problems to be solved by the invention

[0007] However, in substrate processing equipment, in order to achieve higher processing uniformity, it is important to control the distribution of the process gas supplied to the processing chamber. Therefore, in order to prevent product failure, it is desirable to use branch gas pipes to divert the flow and accurately measure the flow rate of the gas supplied to the processing chamber.

[0008] The present invention provides a flow measurement method and a substrate processing device that can use branch gas piping to perform diversion and measure the flow rate of the branched gas flowing into a processing chamber with high precision.

[0009] Technical means to solve the problem

[0010] According to one embodiment of the present invention, a flow measurement method for measuring the flow rate of gas in a substrate processing device is provided, wherein the substrate processing device includes: a gas supply pipe for supplying gas; a plurality of branch gas pipes branching from the gas supply pipe; a metal window connected to the plurality of branch gas pipes; and a shower head, which is arranged at the bottom of the metal window and has a gas exhaust hole for allowing the gas to pass through the metal window. The flow measurement method includes: a step of disposing a flow meter at the supply port of the metal window connected to the plurality of branch gas pipes, and using the flow meter to measure the flow rate of the gas flowing through the supply port of the metal window.

[0011] Effects of the Invention

[0012] According to one aspect, branching is performed by using the branch gas pipes, and the flow rate of the branched gas flowing into the processing chamber can be measured with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment.

[0014] Figure 2 This is a diagram showing an example of the surface of the metal window, the diffusion chamber, and the flow meter according to the embodiment.

[0015] Figure 3 It is a diagram schematically showing an example of a gas system according to an embodiment.

[0016] Figure 4 Yes Figure 2 Figure 2 shows the AA section of the image.

[0017] Figure 5 This is a diagram showing an example of measured values ​​and calculated values ​​of a central region measured by a flow meter according to the embodiment.

[0018] Figure 6 This is a diagram showing an example of measurement values ​​of local portions of the same areas according to the embodiment.

[0019] Description of Reference Numerals

[0020] 11 Cover

[0021] 14 partition wall

[0022] 15 Subject

[0023] 20 Processing Containers

[0024] 32, 32A~32F Metal Windows

[0025] 33 Diffusion Chamber

[0026] 34 sprinkler heads

[0027] 35 Metal window supply port

[0028] 52 Branch gas piping

[0029] 60 Gas supply unit

[0030] 61A~61F Inert gas branch pipes

[0031] 63A~63F Flow ratio regulator

[0032] 65 splitter

[0033] 66 External gas piping

[0034] 67 Inert gas supply source

[0035] 68 Processing gas piping

[0036] 70 substrate support portion

[0037] 90 Control device (control unit)

[0038] 100 substrate processing device

[0039] 101 Sealing parts

[0040] 200 flow meter

[0041] 200a Measuring tube

[0042] 201 Flow measurement fixture

[0043] L, L1 to L6 branch gas piping

[0044] S Processing Chamber DETAILED DESCRIPTION

[0045] Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and overlapping descriptions may be omitted.

[0046] [Substrate processing device]

[0047] First, refer to Figure 1 and Figure 2 , a substrate processing apparatus 100 according to an embodiment will be described. Figure 1 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 100 according to an embodiment. The substrate processing apparatus 100 is an example of an apparatus capable of executing the flow rate measurement method according to an embodiment.

[0048] The substrate processing apparatus 100 is, for example, a plasma processing apparatus that generates inductively coupled plasma (ICP). The substrate processing apparatus 100 uses the generated plasma to perform plasma processing such as etching, ashing, and film formation on a rectangular substrate G. In this embodiment, the substrate G is, for example, a glass substrate for an FPD (Flat Panel Display).

[0049] The substrate processing apparatus 100 includes a processing container 20 and a control device (control unit) 90. The processing container 20 is, for example, a rectangular box-shaped container, the inner wall of which is formed of a conductive material such as anodized aluminum, and a processing chamber S for processing the substrate G is formed inside. The processing container 20 is grounded. The processing container 20 is divided into an upper cover 11 and a lower main body 15 by a partition wall 14 having a plurality of shower heads 34. The plurality of shower heads 34 are opposite to the substrate G, and have a plurality of metal windows 32A to 32F (collectively referred to as "metal windows 32") at the top. A feed-in / feed-out port 18 for feeding in and out the substrate G is provided in the main body 15, and the feed-in / feed-out port 18 can be opened and closed by a gate 24.

[0050] Insulating members 37 are disposed between the partition wall 14 and the shower heads 34 and between adjacent shower heads 34. The shower heads 34 are electrically insulated from each other by the insulating members 37. A dielectric window may be formed instead of the shower heads 34.

[0051] The processing container 20 is divided into an antenna chamber A and a processing chamber S, which are separated vertically by a partition wall 14. The space enclosed by the partition wall 14 and the main body 15 constitutes the processing chamber S. The lid 11 and the main body 15 are normally sealed, but can be separated at the bottom surface of the partition wall 14. When assembling the substrate processing apparatus 100, the lid 11 can be moved upward, for example, and separated from the main body 15, thereby opening the interior of the main body 15 (the processing chamber S) to the atmosphere.

[0052] A branch gas pipe 52 is formed inside each of the multiple metal windows 32A to 32F. Each branch gas pipe 52 is a pipe for supplying gas supplied from the outside of the processing container 20 to each metal window 32. The branch gas pipe 52 is connected to the diffusion chamber 33 inside the metal window 32. The bottom of the diffusion chamber 33 inside the metal window 32 is formed by the shower head 34. The shower head 34 is formed with a gas exhaust hole 36. The gas supplied from the branch gas pipe 52 to the metal window 32 diffuses in the diffusion chamber 33 inside the metal window 32. The gas flows from the diffusion chamber 33 to the gas exhaust hole 36 formed in the shower head 34 and is supplied to the processing chamber. The branch gas pipe 52 connected to the metal windows 32A to 32F is connected to the branch gas pipes L1 to L6. The portion of the branch gas pipe 52 that is connected to the diffusion chamber 33 formed in the metal window 32 is referred to as the supply port 35 of the metal window 32. The branch gas pipes L1 to L6 are collectively referred to as the branch gas pipe L.

[0053] The branched gas lines L1 to L6 are connected to the process gas line 68 via a manifold 65, and the process gas line 68 is connected to the gas supply unit 60. The process gas introduced from the gas supply unit 60 into the process gas line 68 is divided by the manifold 65. The divided process gas flows through the branched gas lines L1 to L6 and is introduced into the process chamber S in a shower-like manner through a plurality of gas discharge holes 36 connected to the diffusion chamber 33 within the metal windows 32A to 32F.

[0054] Specifically, process gas piping 68 connects from the outside of process container 20 to the plurality of metal windows 32A to 32F within process container 20. Gas supply unit 60 includes process gas supply source 64 and valve 62. Process gas piping 68 is connected to process gas supply source 64 via valve 62. Valve 62 controls the supply and stop of process gas by opening and closing.

[0055] The processing gas piping 68 is connected to the manifold 65 and is branched by the manifold 65 into a plurality of branch gas pipings L1 to L6. Each branched gas piping L1 to L6 is connected to a branch gas piping 52 provided on a plurality of metal windows 32A to 32F. Each branched gas piping 52 is connected to a metal window 32A to 32F located in a different area of ​​the partition wall 14. Each branched gas piping L1 to L6 has a flow ratio regulator (FRC) 63A to 63F. The flow ratio regulator 63A to 63F distributes the flow rate determined by a flow controller such as an MFC (Mass Flow Controller) in the processing gas supply source 64 according to a specified ratio. The flow ratio regulators 63A to 63F and the manifold 65 can be used to adjust the gas flow rate and gas distribution of the processing gas to control the distribution of the processing gas supplied to the processing chamber S.

[0056] The gas supply unit 60 also includes an inert gas supply source 67, an external gas pipe 66, inert gas branch pipes 61A to 61F, and valves 69A to 69F. The external gas pipe 66 is connected to the inert gas supply source 67. The inert gas branch pipes 61A to 61F branch from the external gas pipe 66. Each of the branched inert gas branch pipes 61A to 61F is connected to the branch gas pipes L1 to L6. The inert gas branch pipes 61A to 61F and the branch gas pipes L1 to L6 are connected between the flow ratio regulators 63A to 63F and the branch gas pipe 52. Valves 69A to 69F are provided on the inert gas branch pipes 61A to 61F. The valves 69A to 69F control the supply and stop of the inert gas by opening and closing.

[0057] The external gas pipe 66 is connected to the inert gas branch pipes 61A to 61F and branches into branch gas pipes L1 to L6. A flow controller such as an MFC (Mass Flow Controller) in the inert gas supply source 67 supplies a predetermined gas flow rate to the branch gas pipes L1 to L6.

[0058] For example, in the flow rate measurement method of this embodiment, when assembling the substrate processing apparatus 100, with the lid 11 open to expose the interior of the main body 15 (processing chamber S) to the atmosphere, the valve 62 is closed to stop the supply of the process gas. Subsequently, the valves 69A to 69F are opened to supply an inert gas, such as argon (Ar) gas or helium (He) gas, from the inert gas supply source 67 to the metal window 32. Furthermore, during substrate processing, the lid 11 is closed to maintain the interior of the main body 15 (processing chamber S) at a predetermined reduced pressure, the valves 69A to 69F are opened to stop the supply of the inert gas, and the valve 62 is opened to supply the process gas to the processing chamber S.

[0059] In the flow rate measurement method of this embodiment, when assembling the substrate processing apparatus 100 , dry air may be supplied instead of the inert gas from the external gas pipe 66 .

[0060] The main body 15 is provided with a plurality of exhaust ports 19, each of which is connected to a gas exhaust pipe 25. The gas exhaust pipe 25 is connected to an exhaust device 27 via an on-off valve 26. The gas exhaust pipe 25 forms a gas exhaust section 28 using the on-off valve 26 and the exhaust device 27. The exhaust device 27 includes a turbomolecular pump and a vacuum pump, and can freely evacuate the interior of the main body 15 to a predetermined vacuum level during processing.

[0061] A high-frequency antenna 51 is located in antenna chamber A, spaced apart from metal window 32, above metal window 32. High-frequency antenna 51 contributes to plasma generation and is formed by winding an antenna conductor made of a conductive metal such as copper into a loop or spiral. For example, the looped antenna conductor can be wound multiple times. High-frequency antenna 51 is connected to a high-frequency power supply 56 via a matching device 55 for impedance matching.

[0062] By applying high-frequency electric power, for example, 13.56 MHz, from the high-frequency power supply 56 to the high-frequency antenna 51, an induced electric field is generated within the processing chamber S through the metal window 32. This induced electric field converts the processing gas supplied from the shower head 34 into plasma, generating an inductively coupled plasma, and ions in the plasma are supplied to the substrate G.

[0063] A substrate support 70 is provided within the processing chamber S, which is surrounded by the partition wall 14 and the main body 15. The substrate support 70 supports the substrate G. The substrate support 70 is connected to a high-frequency power supply 83, which serves as a bias source, via a matching unit 82 for impedance matching. By applying high-frequency electric power, for example, 3.2 MHz, from the high-frequency power supply 83 to the substrate support 70, an RF bias is generated, which allows the ions generated by the high-frequency power supply 56 to be attracted to the substrate G.

[0064] The high-frequency power supply 56 is a plasma generation source, while the high-frequency power supply 83 connected to the substrate support 70 is a bias source that attracts the generated ions and imparts kinetic energy to them. In this way, the generation source utilizes inductive coupling to generate plasma, while the bias source, acting as a separate power source, is connected to the substrate support 70 to control ion energy. This allows for independent plasma generation and ion energy control, increasing processing flexibility. The frequency of the high-frequency power output from the high-frequency power supply 56 is preferably set within a range of 0.1 MHz to 500 MHz.

[0065] The substrate processing apparatus 100 further includes a control device 90. The control device 90 may be a computer having a processor, a storage unit such as a memory, an input device, a display device, and a signal input / output interface. The control device 90 controls the various components of the substrate processing apparatus 100. In the control device 90, an operator can use an input device to input commands, etc., to manage the substrate processing apparatus 100. In addition, the control device 90 can use a display device to visually display the working status of the substrate processing apparatus 100. In addition, a control program and scheme data are stored in the storage unit. The control program is executed by the processor to perform various processes in the substrate processing apparatus 100. The processor executes the control program and controls the various components of the substrate processing apparatus 100 according to the scheme data.

[0066] [Flow Control]

[0067] In order to achieve higher processing uniformity in the substrate processing apparatus 100, it is important to control the plasma density and distribution of the processing gas in the processing chamber S. However, in the prior art, it is not possible to actually measure the gas flow rate diverted through each metal window 32A to 32F. On the other hand, if gas with a flow rate different from the expected flow rate flows from the metal windows 32A to 32F into the processing chamber S, it is possible that the substrate will be defective. In addition, if the flow rate of the gas supplied from the metal windows 32A to 32F to the processing chamber S cannot be accurately detected, in the manufacturing process of the substrate processing apparatus 100, if an error occurs in the assembly of the gas piping and the surroundings, the error cannot be detected.

[0068] Therefore, in this embodiment, the lid 11 is opened, the main body 15 is exposed to the atmosphere, the shower head 34 is removed, and the metal windows 32A to 32F are placed upside down. A flow meter is then installed at the supply port 35 of each metal window 32A to 32F. Furthermore, the flow rate of the divided gas is measured at the supply port 35 of each metal window 32A to 32F. The supply port 35 of each metal window 32A to 32F connects the branch gas pipe 52 to the diffusion chamber 33 formed within each metal window 32A to 32F.

[0069] The flow measurement method of this embodiment can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32 arranged in the same predetermined area among the multiple metal windows 32. In addition, in the flow measurement method of this embodiment, permanent sensors such as flow meters and vacuum environments are not required. When assembling the substrate processing device 100, a flow meter is configured at the supply port 35 of each area of ​​the multiple metal windows 32A to 32F. Moreover, the flow rate of the gas in each area is measured by the flow meter. Thus, the flow rate of the gas supplied from each area of ​​each metal window 32A to 32F to the processing chamber S can be accurately measured, and the error can be detected in the assembly around the gas piping.

[0070] Flow meter 200 Figure 2 As shown, the supply port of the metal window 32 is installed when the substrate processing apparatus 100 is assembled. Figure 2 37 shows the surface of the metal window 32 electrically insulated by the insulating member 37. Figure 2 It will Figure 1 FIG. 1 is a diagram showing an example of a flow meter 200 and showing the surface of the metal window 32 , the interior of the diffusion chamber 33 , and the flow meter 200 upside down in a state where the shower head 34 at the bottom of the metal window 32 is removed.

[0071] The metal window 32 is divided into a plurality of sections for each region, and a flow meter 200 is installed at the gas supply port 35 of each of the plurality of sections.

[0072] The multiple regions of the metal window 32 are described. Figure 2 In the example, the metal window 32 is divided into a central area C, a peripheral edge area O, and a middle area M between the central area C and the edge area O. The peripheral edge area O and the middle area M are further divided into multiple areas.

[0073] [Gas system]

[0074] Reference Figure 2 and Figure 3 , an example of the gas system and area of ​​the embodiment is described. In the central area C, the metal window 32A is divided into four parts C1 to C4, and the flow meter 200 is installed one by one at the supply port 35 of the metal window 32A of the parts C1 to C4. Figure 2 As shown, parts C1 and C3 are triangular, and parts C2 and C4 are trapezoidal.

[0075] For example, refer to the enlarged portion C4 of the metal window 32A. Figure 2 In the figure below, the flow meter 200 is fixed to the metal window 32A using the flow measurement fixture 201, and the flow meter 200 is installed at the supply port 35 of the metal window 32A of part C4. Figure 2 AA section of Figure 4 , the structure of the installation part of the flow meter 200 is explained.

[0076] Figure 3The gas system for each zone is shown. For example, sections C1 to C4 of the metal window 32A are pre-set in the central region C of the same area. The branch gas line L1 is branched into four sections, and the four branch gas lines 52 are connected to sections C1 to C4 of the metal window 32A, allowing gas to flow simultaneously to the supply ports 35 of the metal windows 32A in each of the four sections C1 to C4 within the same area. This allows the flowmeter 200 to simultaneously measure the flow rate of gas flowing through the supply ports 35 of the metal windows 32A in sections C1 to C4 of the region C.

[0077] In the middle region M, sections ML1 to ML4 of the metal windows 32B are pre-set to the same region, and sections MS1 to MS4 of the metal windows 32C are pre-set to the same region. The branch gas line L2 is branched into four sections, and the four branch gas lines 52 are connected to the sections ML1 to ML4 of the metal windows 32B, allowing gas to flow simultaneously to the supply ports 35 of the metal windows 32B in each of the four sections ML1 to ML4 located in the same region. This allows the flowmeter 200 to simultaneously measure the flow rate of gas flowing through the supply ports 35 of the metal windows 32B located in each of the sections ML1 to ML4 of the ML region.

[0078] The branch gas pipe L3 is branched into four, and the four branch gas pipes 52 are connected to the sections MS1 to MS4 of the metal window 32C, so that gas flows simultaneously to the supply ports 35 of the metal windows 32C in each of the four sections MS1 to MS4 located in the same region. Thus, the flowmeter 200 can simultaneously measure the gas flow rate at the supply ports 35 of the metal windows 32C located in each of the sections MS1 to MS4 of the MS region.

[0079] In edge region O, sections OC1 to OC8 of metal window 32D are pre-set to the same region, and sections OLS1 and OLS2 of metal window 32E are pre-set to the same region. Furthermore, sections OSS1 and OSS2 of metal window 32F are pre-set to the same region. Branch gas piping L4 is branched into eight sections, and the eight branch gas piping 52 is connected to sections OC1 to OC8 of metal window 32D, allowing gas to flow simultaneously to the supply ports 35 of metal windows 32D in each of the eight sections OC1 to OC8 located in the same region. This allows flowmeter 200 to simultaneously measure gas flowing through the supply ports 35 of metal windows 32D located in each of sections OC1 to OC8 of the OC region.

[0080] The branch gas pipe L5 is branched into two, and the branched gas pipe 52 is connected to the sections OLS1 and OLS2 of the metal window 32E, so that gas flows simultaneously to the supply port 35 of the metal window 32E in each of the two sections OLS1 and OLS2 located in the same area. Thus, the flowmeter 200 can simultaneously measure the flow rate of gas flowing through the supply port 35 of the metal window 32E in each section OLS1 and OLS2 of the OLS area.

[0081] The branch gas pipe L6 is branched into two, and the branched gas pipe 52 is connected to the metal window 32F sections OSS1 and OSS2, so that gas flows simultaneously to the supply ports 35 of the metal windows 32F of the two sections OSS1 and OSS2, which are located in the same area. Thus, the flowmeter 200 can simultaneously measure the flow rate of gas flowing through the supply ports 35 of the metal windows 32F of the sections OSS1 and OSS2, which are located in the OSS area.

[0082] [Flow meter]

[0083] Below, refer to Figure 4 , an example of the configuration of the flow meter 200 is described. Figure 4 Yes Figure 2 The AA section of the diagram. Figure 4 As shown in (a) and (b), a flow measurement jig 201 is fixed to the metal window 32 (on the surface of the metal window), and a flow meter 200 is fixed to the metal window 32 using the flow measurement jig 201. A measuring tube 200a in the flow meter 200 is connected to the terminal end 35A of the supply port 35 of the metal window 32, and the flow meter 200 measures the flow rate of the gas passing through the terminal end 35A of the supply port 35 of the metal window 32.

[0084] Figure 4 (a) shows the arrangement of the flow meter 200 near the supply port 35 of the metal window 32 when the branch gas pipe 52 is not provided with the orifice 105 . Figure 4 (b) shows the arrangement of the flow meter 200 near the supply port 35 of the metal window 32 when the orifice 105 is provided in the branch gas pipe 52 .

[0085] exist Figure 4 In (a) and (b), the supply port 35 of the metal window 32 is formed by using the branch gas pipe 52 formed in the metal window 32. The branch gas pipe 52 is made of, for example, ceramic.

[0086] The flow measurement jig 201 is disposed on the metal window 32 via the sealing component 101 at the end (front end) of the gas hole of the branch gas pipe 52, which forms the terminal portion 35A of the supply port 35 of the metal window 32. The gas hole of the branch gas pipe 52 and the measuring tube 200A in the flowmeter 200 pass through the sealing component 101 and the flow measurement jig 201. A sealing component 104 is provided between the sealing component 101 and the branch gas pipe 52, and a sealing component 103 is provided between the sealing component 101 and the flow measurement jig 201. The sealing components 101, 103, and 104 seal the gas flowing through the supply port 35. The sealing component 101 may be made of, for example, SUS. The sealing components 103 and 104 may be formed of, for example, O-rings.

[0087] The flow meter 200 is attached to a flow measurement jig 201 at the distal end portion 35A of the supply port 35 of the metal window 32 .

[0088] exist Figure 4 In the example (b), the throttle hole 105 is arranged adjacent to the root end 35b of the supply port 35, and the throttle hole 105 is used to reduce the flow of the gas flowing from the supply port 35 of the metal window 32 into the diffusion chamber 33. Figure 4 In the example (b), a spiral groove 52A is provided on the inner wall of the supply port 35, and the gas reduced in flow by the throttle hole 105 is smoothly delivered to the terminal end 35A of the supply port 35. Figure 4 In the example of (a), the spiral groove 52A may be provided on the inner wall of the supply port 35 instead of the spiral groove 52A.

[0089] In this configuration, the flow meter 200 is installed when the substrate processing apparatus 100 is assembled in the factory after the substrate processing apparatus 100 is manufactured. Specifically, the flow meter 200 is not permanently installed. Instead, it is installed after the substrate processing apparatus 100 is manufactured to measure the flow rate of gas flowing through the supply port 35 of the metal window 32 of the factory-assembled substrate processing apparatus 100. When the measurement is completed, the flow meter 200 is removed from the metal window 32. Therefore, when the substrate G is subjected to the desired processing, i.e., substrate processing, using the substrate processing apparatus 100, the flow meter 200 is removed.

[0090] The control device 90 controls the step of measuring the flow rate of gas flowing through the supply ports 35 of the metal windows 32A to 32F using the flow meter 200. The flow meter 200 is placed at the supply ports 35 of the metal windows 32 in an atmospheric environment, and the flow rate of gas flowing through the terminal portions 35A of the supply ports 35 is measured using the flow meter 200. After the measurement, the flow meter 200 can be removed from the supply ports 35 of the metal windows 32.

[0091] Furthermore, when measuring the flow rate of the gas, the metal window 32 is divided into a plurality of regions, and the flow rate of the gas flowing through the supply port 35 of the metal window 32 in the same region can be measured simultaneously.

[0092] When measuring the gas flow, close Figure 1 The valve 62 shown stops the supply of the processing gas, and the valves 69A to 69F are opened to allow the inert gas output from the inert gas supply source 67 to flow to the supply ports 35 of the metal windows 32A to 32F. Alternatively, dry air may be flowed to the supply ports 35 of the metal windows 32A to 32F instead of the inert gas.

[0093] In the step of measuring the flow rate of the gas, the metal window 32 is divided into a plurality of regions, and the flow rate of the gas flowing through the supply port 35 of the metal window 32 in the same region can be measured simultaneously.

[0094] [Measurement results]

[0095] Regarding the metal window 32 being divided into Figure 3 The results of measuring the gas flow rate of the supply port 35 of the metal window 32 in the same region (C region, ML region, MS region, OC region, OLS region, OSS region) are obtained by referring to Figure 5 Provide explanation. Figure 5 1 is a diagram showing an example of the measurement results and calculation results of the gas flow rate measured by the flow meter 200 according to the embodiment.

[0096] Figure 5 (a) shows the result of simultaneously measuring the gas flow rate flowing through the supply port 35 of the metal window 32 in the C region, that is, the actual measurement value of the flow meter 200. Figure 5 (b) indicates that to obtain Figure 5 The calculated values ​​of the simulation results are obtained when the simulation is performed under the condition that the same flow rate of inert gas as the total flow rate of inert gas actually supplied from the inert gas supply source 67 is supplied to the metal windows 32 in the C region. The flow rates of gas flowing simultaneously through the terminal portions 35A of the supply ports 35 of the portions C1 to C4 of the metal windows 32 in the same region 1 of the C region are obtained.

[0097] As a result, Figure 5 The vertical axes of (a) and (b) show the flow rate of the liquid flowing through the terminal portion 35A of the supply port 35, and Figure 5 The measured value of (a) and Figure 5The calculated value of (b) is basically consistent. This confirms the effectiveness of the flow measurement method of the embodiment. In addition, it can be seen that gas is evenly supplied to the supply ports 35 of the parts C1 to C4 of the metal window 32 in the C region. As described above, according to the flow measurement method of this embodiment, the flow rate of the gas flowing into the processing chamber S can be measured with high precision by using the branch gas pipe 52 for diversion.

[0098] In addition, if Figure 2 As shown, the areas of parts C1 and C3 are smaller than those of parts C2 and C4. In other areas, the areas of the metal window 32 are roughly the same. Therefore, the areas of parts C1 and C3 are smaller than those of parts C2 and C4. Figure 4 The mechanism shown in (b) is provided with a throttle hole 105, and is used in parts C2 and C4. Figure 4 The mechanism shown in (a) is not provided with the throttle hole 105. Thus, the throttle hole 105 controls the hole of the root end 35b of the supply port 35 of the portions C1 and C3, which have smaller areas than the portions C2 and C4, and reduces the flow rate of the gas supplied to the portions C1 and C3.

[0099] As a result, Figure 5 In (a) and (b), the flow rate (L / Min) of the gas flowing through the terminal portion 35A of the supply port 35 in portions C2 and C4 is greater than the flow rate (L / Min) of the gas flowing through the terminal portion 35A of the supply port 35 in portions C1 and C3.

[0100] For example, when assembling the substrate processing apparatus 100, the parts C2 and C4 are not installed. Figure 4 The mechanism shown in (a) is not provided with the throttle hole 105, but is installed in parts C1 and C3. Figure 4 (b) shows a mechanism with a throttle hole 105. However, sometimes it happens that parts C1 and C3 are installed Figure 4 The mechanism shown in (a) is not provided with the throttle hole 105, but is installed in parts C2 and C4. Figure 4 In the case of an error such as the mechanism shown in (b) provided with the orifice 105, in this case, the measured value of the flow rate of the gas flowing through the supply port 35 of the portions C2 and C4 obtained by the flow rate measurement method of this embodiment is smaller than the measured value of the flow rate of the gas flowing through the supply port 35 of the portions C1 and C3.

[0101] Right now, Figure 5 The size relationship between the histograms of parts C1, C3 and parts C2, C4 in (b) is related to the current Figure 5 The histogram of (a) is opposite. Thus, the operator can find that there are errors in the installation positions of the branch gas pipes 52 at the parts C1 and C3 and the parts C2 and C4.

[0102] As described above, the flow rate measurement method of this embodiment can detect assembly errors, such as those in gas piping, during the manufacturing process of the substrate processing apparatus 100. Furthermore, for example, a threshold value for detecting assembly errors can be pre-set, and the control device 90 can automatically compare the measured value (actual value) of the gas flow rate measured by the flow rate measurement method of this embodiment with the threshold value. The control device 90 can also automatically determine that an assembly error has occurred if the measured value deviates by more than the threshold value.

[0103] Figure 6 This graph shows an example of measured values ​​(actual values) of gas flow rates at various locations in each region (C region, ML region, MS region, OC region, OLS region, and OSS region) of the embodiment, as measured using the flow rate measurement method of this embodiment. In this experiment, dry air was supplied instead of inert gas.

[0104] Figure 6 (a) is a measurement result of the gas flow rate at the supply port of the metal window 32A in each portion C1 to C4 of the C region. Figure 6 (b) shows the measurement results of the gas flow rates at the supply ports of the metal windows 32B in the respective portions ML1 to ML4 of the ML region. Figure 6 (c) shows the measurement results of the gas flow rates at the supply ports of the metal windows 32C in the respective portions MS1 to MS4 of the MS region. Figure 6 (d) is a measurement result of the gas flow rate at the supply port of the metal window 32D in each of the parts OC1 to OC8 of the OC region. Figure 6 (e) is the measurement result of the gas flow rate at the supply port of the metal window 32E of each part OLS1 and OLS2 of the OLS region. Figure 6 (f) is the measurement result of the gas flow rate at the supply port of the metal window 32F of each part OSS1 and OSS2 of the OSS area.

[0105] as a result, Figure 6 (b)~ Figure 6 The measured values ​​of each part in the same area of ​​any area shown in (f) are basically consistent. Figure 6 In (a), the measured flow rates of sections C1 and C3 are substantially consistent, and the measured flow rates of sections C2 and C4 are substantially consistent. The difference between the measured flow rates of sections C1 and C3 and the measured flow rates of sections C2 and C4 is due to the fact that, as described above, the gas flow rate is reduced using orifices 105 in sections C1 and C3, while there are no orifices 105 in sections C2 and C4.

[0106] As described above, the flow rate measurement method and substrate processing apparatus of this embodiment utilize branched gas piping for flow diversion, enabling highly accurate measurement of the branched gas flow rate into the processing chamber. Furthermore, assembly errors in the gas piping can be detected during the manufacturing process of the substrate processing apparatus 100. This prevents, in the assembled substrate processing apparatus, the supply of gas into the processing chamber at a flow rate different from the set flow rate.

[0107] The flow rate measurement method and substrate processing apparatus disclosed in this disclosure are illustrative in all respects and should not be construed as limiting. The embodiments may be modified and improved in various ways without departing from the appended claims and their spirit. The various embodiments described above may be supplemented with additional configurations and combined within the scope of non-inconsistency.

[0108] The substrate processing device of the present invention can be applied to any type of device including Atomic Layer Deposition (ALD) device, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0109] In addition, a plasma processing apparatus is described as an example of a substrate processing apparatus, but a substrate processing apparatus can be any apparatus that performs a predetermined process (e.g., film forming process, etching process, etc.) on a substrate and is not limited to a plasma processing apparatus.

Claims

1. A flow measurement method for measuring the flow of a gas in a substrate processing device, characterized in that: The substrate processing device comprises: a gas supply pipe for supplying gas; a plurality of branch gas pipes branching from the gas supply pipe; a metal window communicating with the plurality of branch gas pipes and having a supply port, the supply port of the metal window being a portion communicating with the branch gas pipes and a diffusion chamber formed in the metal window; and a shower head, which is the bottom of the diffusion chamber, forms the diffusion chamber together with the metal window, and has a gas discharge hole for allowing the gas from the diffusion chamber to pass through; The flow measurement method includes the steps of disposing flow meters at the supply ports of the plurality of metal windows in an atmospheric environment, and measuring the flow rate of the gas flowing through the supply ports of the metal windows using the flow meters.

2. The flow measurement method according to claim 1, wherein: In the step of measuring the flow rate of the gas, the flow meter is disposed at a distal end portion of the supply port of the metal window.

3. The flow measurement method according to claim 1 or 2, wherein: The step of measuring the flow rate of the gas can measure the flow rate of the gas flowing simultaneously through the supply port of the metal window in the same plurality of pre-divided regions of the metal window.

4. The flow measurement method according to claim 1 or 2, wherein: The flow meter is detachable from the supply port of the metal window.

5. A substrate processing device, characterized in that: include: a gas supply pipe for supplying gas; a plurality of branch gas pipes branching from the gas supply pipe; a metal window communicating with the plurality of branch gas pipes and having a supply port, wherein the supply port of the metal window is a portion communicating with the branch gas pipes and a diffusion chamber formed in the metal window; a shower head, which is the bottom of the diffusion chamber, forms the diffusion chamber together with the metal window, and has a gas discharge hole for allowing the gas from the diffusion chamber to pass through; and Control Department, The control unit controls the following steps: disposing flow meters at the supply ports of the plurality of metal windows under an atmospheric environment, and measuring the flow rate of the gas flowing through the supply ports of the metal windows using the flow meters.

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