Micro-electromechanical infrared light sensing device

Abstract

The present invention discloses a micro-electromechanical infrared light sensing device, which comprises a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of blocking elements. The second supporting elements are connected to the sensing plate so that the sensing plate is suspended above the substrate. The reflecting plate is located between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate so that the reflecting plate is suspended between the substrate and the sensing plate. The blocking elements are located between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the blocking elements contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

Description

Technical Field

[0001] The invention relates to a micro-electromechanical infrared light sensing device with adjustable absorption rate. Background Art

[0002] Currently, the performance of MEMS infrared light sensors has been greatly improved and has been applied to various fields. In order to be applicable to more diverse environments, MEMS infrared light sensors must support a wider temperature range. To achieve this requirement, MEMS infrared light sensors must be able to automatically adjust their absorption rate according to different ambient temperatures.

[0003] However, the existing MEMS infrared light sensing device lacks an effective heat insulation structure, so that it is unable to effectively reduce heat loss, and thus the performance of the MEMS infrared light sensing device cannot be effectively improved.

[0004] In addition, the distance between the infrared light absorbing layer and the infrared light reflecting layer of the existing MEMS infrared light sensing device cannot be adjusted. Therefore, when a high-resolution readout circuit is used to read the signal of the MEMS infrared light sensing device, the readout circuit is easily saturated, which limits the sensing range of the MEMS infrared light sensing device.

[0005] On the other hand, the sensing board of the existing MEMS infrared light sensing device is easily affected by temperature changes, resulting in uneven stress and warpage, causing inconsistent distances between the infrared light absorption layer and the infrared light reflection layer, thereby affecting the sensing accuracy of the MEMS infrared light sensing device. Summary of the invention

[0006] According to one embodiment of the present invention, a micro-electromechanical infrared light sensing device is provided, which includes a substrate, a sensing plate, a reflector, a plurality of first supporting elements, a plurality of second supporting elements, and a plurality of blocking elements. The second supporting elements are connected to the sensing plate so that the sensing plate is suspended above the substrate. The reflector is located between the substrate and the sensing plate. The first supporting elements are connected to the reflector so that the reflector is suspended between the substrate and the sensing plate. The blocking elements are located between the substrate and the reflector. When the reflector moves toward the substrate and at least one of the blocking elements contacts the substrate or the reflector, the distance between the reflector and the sensing plate increases.

[0007] The above description of the content of the present invention and the following description of the embodiments are intended to demonstrate and explain the spirit and principle of the present invention, and to provide further explanation of the claims of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1A to Figure 1B A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0009] Figure 2 is a cross-sectional view of a micro-electro-mechanical infrared light sensing device according to an embodiment of the present invention, and depicts a reflector of the micro-electro-mechanical infrared light sensing device located at a first position;

[0010] Figure 3 for Figure 2 Another cross-sectional view of the MEMS infrared light sensing device is shown, and the reflector of the MEMS infrared light sensing device is shown to be located at a second position;

[0011] Figure 4A to Figure 4B A cross-sectional view of a micro-electro-mechanical infrared light sensing device according to an embodiment of the present invention;

[0012] Figure 5 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0013] Figure 6 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0014] Figure 7 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0015] Figure 8 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0016] Fig. 9 A three-dimensional diagram of a micro-electro-mechanical infrared light sensing device according to an embodiment of the present invention;

[0017] Fig.10 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0018] Fig.11 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0019] Fig.12 A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0020] Figures 13A to 13B A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0021] Figure 14 to Figure 16 A cross-sectional view of a micro-electro-mechanical infrared light sensing device according to an embodiment of the present invention;

[0022] Figures 17A to 17B A three-dimensional diagram of a micro-electromechanical infrared light sensing device according to an embodiment of the present invention;

[0023] Figure 18-19 FIG. 4 is a cross-sectional view of a micro-electro-mechanical infrared light sensing device according to an embodiment of the present invention.

[0024] Explanation of symbols

[0025] 1,2,3: MEMS infrared light sensing device

[0026] 10,20,30:Substrate

[0027] 11,21,31: Reflector

[0028] 12,22,32: Induction board

[0029] 121,221,321: Upper infrared light absorption layer

[0030] 122,222,322: Lower infrared light absorption layer

[0031] 123,223,323: Infrared light sensing layer

[0032] 13A, 23A, 33A: first support element

[0033] 111, 211, 311, 131A, 231A, 331A: infrared light reflection layer 112, 212, 312, 132A, 232A, 332A: dielectric material layer A1: first connection portion

[0034] A2: First bending part

[0035] A3: First support part

[0036] A4: First anchor

[0037] 13B, 23B, 33B: Second support element

[0038] 131B, 231B, 331B: upper infrared light absorption layer

[0039] 132B, 232B, 332B: lower infrared light absorption layer 133B, 233B, 333B: infrared light sensing layer

[0040] B1: Second connection

[0041] B2: Second bending part

[0042] B3: Second support part

[0043] B4: Second anchor

[0044] 14,24,34: Fixed seat

[0045] 15,35: blocking element

[0046] 25a: first blocking element

[0047] 25b: Second blocking element

[0048] 16,26,36: Voltage source

[0049] 17,27,37: Controller

[0050] 18,28,38: Electrode layer

[0051] 181: Insulation layer

[0052] D1: First distance

[0053] D2: Second distance

[0054] D3: The third distance

[0055] D2', D3': distance between reflector and substrate

[0056] H1: First adiabatic cavity

[0057] H2: Second adiabatic cavity

[0058] Lower surface: S1, S1', U1, U1'

[0059] Upper surface: S2, S2', U2, U2'

[0060] II,II-II,III-III: hatching line

[0061] L1.L2,L3,L4: Connection DETAILED DESCRIPTION

[0062] The following will refer to the relevant drawings to illustrate the embodiments of the micro-electromechanical infrared light sensing device according to the present invention. For the sake of clarity and convenience of the illustration, the components in the drawings may be exaggerated or reduced in size and proportion. In the following description and / or claims, when it is mentioned that an element is "connected" or "coupled" to another element, it may be directly connected or coupled to the other element or there may be an intervening element; and when it is mentioned that an element is "directly connected" or "directly coupled" to another element, there is no intervening element. Other words used to describe the relationship between elements or layers should be interpreted in the same way. For ease of understanding, the same elements in the following embodiments are illustrated with the same symbols.

[0063] See also Figure 1A , Figure 1B , Figure 2 and Figure 3 , which are a three-dimensional view and a cross-sectional view of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Figure 1A and Figure 1BAs shown, the MEMS infrared light sensing device 1 includes a substrate 10 , a reflective plate 11 , a sensing plate 12 , a plurality of first supporting elements 13A, a plurality of second supporting elements 13B, a plurality of fixing bases 14 , a plurality of blocking elements 15 , a voltage source 16 , a controller 17 and an electrode layer 18 .

[0064] The electrode layer 18 is disposed on the substrate 10. In one embodiment, the substrate 10 may be a silicon substrate or other similar elements.

[0065] Each first supporting element 13A includes a first connecting portion A1, a first bending portion A2, a first supporting portion A3 and a first fixing anchor A4. The first connecting portion A1 connects the reflective plate 11 and the first bending portion A2, while the first supporting portion A3 connects the first bending portion A2 and the first fixing anchor A4. Each first supporting element 13A is fixed to the substrate 10 via the first fixing anchor A4 disposed at one end thereof, while the other end of each first supporting element 13A is connected to the reflective plate 11 via the first connecting portion A1. Therefore, through the first supporting elements 13A, the reflective plate 11 can be suspended above the substrate 10, so that a first heat-insulating cavity H1 is formed between the reflective plate 11 and the substrate 10.

[0066] The fixing seats 14 are fixed to the first fixing anchors A4 of the first supporting elements 13A, respectively. Similarly, each second supporting element 13B comprises a second connecting portion B1, a second bending portion B2, a second supporting portion B3 and a second fixing anchor B4. The second connecting portion B1 connects the sensing plate 12 and the second bending portion B2, while the second supporting portion B3 connects the second bending portion B2 and the second fixing anchor B4. Each second supporting element 13B is fixed to the corresponding fixing seat 14 through the second fixing anchor B4 disposed at one end thereof, and the other end of each second supporting element 13B is connected to the sensing plate 12 through the second connecting portion B1. Therefore, through the second supporting elements 13B, the sensing plate 12 can be suspended above the reflecting plate 11, so that a second heat-insulating cavity H2 is formed between the sensing plate 12 and the reflecting plate 11. Since the sensing plate 12 is fixed to the fixing seats 14 via the second supporting elements 13B, although the distance between the reflecting plate 11 and the substrate 10 and the distance between the reflecting plate 11 and the sensing plate 12 may vary, the sum of the two distances is a constant.

[0067] As can be seen from the above, the MEMS infrared light sensing device 1 has a special double-layer structure, so that the reflector 11 is suspended between the substrate 10 and the sensing plate 12, so that the sensing plate 12 and the substrate 10 can be further separated to form two insulating cavities (a first insulating cavity H1 and a second insulating cavity H2).

[0068] In the present embodiment, the blocking elements 15 are disposed on the lower surface of the reflector 11 and are located between the substrate 10 and the reflector 11. The blocking elements 15 can be arranged in a centrally symmetrical polygonal manner, that is, the connecting line L1 between the blocking elements 15 can form a centrally symmetrical polygon. In the present embodiment, the blocking elements 15 are arranged in a rectangular shape, that is, the connecting line L1 forms a rectangle, but the rectangle is not limited thereto. The blocking elements 15 can also be arranged to form a rhombus, a circle, and other centrally symmetrical polygons. In addition, the blocking elements 15 can also be arranged to form a triangle, a pentagon, a hexagon, and other axially symmetrical polygons or irregular shapes. In the present embodiment, the blocking elements 15 can have the same height.

[0069] The voltage source 16 is electrically connected to the electrode layer 18 on the substrate 10 and the reflector 11. The controller 17 is electrically connected to the voltage source 16 and controls the voltage source 16 to output a voltage to form a voltage difference between the electrode layer 18 and the reflector 11, so as to control the movement of the reflector 11. In one embodiment, the controller 17 may be a microcontroller (MCU), a central processing unit (CPU), an application-specific integrated circuit (ASIC), or other similar components.

[0070] Figure 2 for Figure 1A A cross-sectional view of the micro-electromechanical infrared light sensing device 1 along the II section line. Figure 2 As shown, the reflector 11 includes an infrared light reflecting layer 111 and a dielectric material layer 112. The infrared light reflecting layer 111 of the reflector 11 has a lower surface S1 facing the substrate 10 and an upper surface S2 opposite to the lower surface S1, and the dielectric material layer 112 of the reflector 11 is disposed on the lower surface S1 of the infrared light reflecting layer 111. The voltage source 16 is electrically connected to the electrode layer 18 of the substrate 10 and the infrared light reflecting layer 111 of the reflector 11. In one embodiment, the infrared light reflecting layer 111 of the reflector 11 may be a metal layer with high reflectivity, such as aluminum (Al), gold (Au), silver (Ag), tungsten (W), copper (Cu), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., so that the infrared light reflecting layer 111 can also serve as another electrode layer corresponding to the electrode layer 18. In one embodiment, the dielectric material layer 112 of the reflector 11 may be made of a dielectric material, such as silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y ) etc. to provide an insulating effect. The material of the blocking elements 15 can be the same as the dielectric material layer 112 of the reflective plate 11.

[0071] Similarly, each first support element 13A also includes an infrared light reflection layer 131A and a dielectric material layer 132A. The infrared light reflection layer 131A of each first support element 13A includes a lower surface S1' adjacent to the substrate 10 and an upper surface S2' opposite to the lower surface S1', and the dielectric material layer 132A of each first support element 13A is disposed on the lower surface S1' of the infrared light reflection layer 131A of the first support element 13A.

[0072] The sensing plate 12 includes an upper infrared light absorbing layer 121, an infrared light sensing layer 123, and a lower infrared light absorbing layer 122. The infrared light sensing layer 123 has a lower surface U1 facing the substrate 10 and an upper surface U2 opposite to the lower surface U1. The upper infrared light absorbing layer 121 of the sensing plate 12 is disposed on the upper surface U2 of the infrared light sensing layer 123, and the lower infrared light absorbing layer 122 of the sensing plate 12 is disposed on the lower surface U1 of the infrared light sensing layer 123, so that the infrared light sensing layer 123 of the sensing plate 12 is located between the upper infrared light absorbing layer 121 and the lower infrared light absorbing layer 122. In this embodiment, the sensing plate 12 may have a symmetrical structure. In other words, the upper infrared light absorbing layer 121 and the lower infrared light absorbing layer 122 of the sensing plate 12 may be made of the same material, and the thickness of the upper infrared light absorbing layer 121 may be substantially equal to the thickness of the lower infrared light absorbing layer 122. In one embodiment, the upper infrared light absorbing layer 121 and the lower infrared light absorbing layer 122 of the sensing plate 12 may be dielectric material layers, such as silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon oxynitride (SiO x N y In one embodiment, the infrared light sensing layer 123 of the sensing plate 12 may be an alloy layer, a metal compound layer, a metal oxide layer, a silicon compound layer or a silicon layer; for example, silicon germanium alloy (SiGe), vanadium oxide (VO x ), polycrystalline silicon (p-Si, a-Si) or titanium silicide, etc. Since the upper infrared light absorption layer 121 and the lower infrared light absorption layer 122 of the sensing plate 12 can be made of the same material, and the thickness of the upper infrared light absorption layer 121 can be substantially equal to the thickness of the lower infrared light absorption layer 122, they have the same material properties, structure and size. The above material properties can be thermal expansion coefficient or Young's Modulus, etc. In the manufacturing process of the sensing plate 12 with the above symmetrical structure, the overall stress of the sensing plate 12 is balanced and the warping and deformation are reduced. When the material and thickness of the upper infrared light absorption layer 121 of the sensing plate 12 are the same as the material and thickness of the lower infrared light absorption layer 122, the complexity and cost of the manufacturing process of the sensing plate 12 can be reduced. In another embodiment, the sensing plate 12 can also have an asymmetric structure.

[0073] Similarly, each second support element 13B also includes a lower infrared light absorbing layer 132B, an infrared light sensing layer 133B and an upper infrared light absorbing layer 131B adjacent to the substrate 10. The infrared light sensing layer 133B of the second support element 13B includes a lower surface U1' adjacent to the substrate 10 and an upper surface U2' opposite to the lower surface U1'. The upper infrared light absorbing layer 131B of the second support element 13B is disposed on the upper surface U2' of the infrared light sensing layer 133B, and the lower infrared light absorbing layer 132B of the second support element 13B is disposed on the lower surface U1' of the infrared light sensing layer 133B, so that the infrared light sensing layer 133B of the second support element 13B is located between the upper infrared light absorbing layer 131B and the lower infrared light absorbing layer 132B. Each second support element 13B may also have a symmetrical structure. That is, the upper infrared light absorbing layer 131B and the lower infrared light absorbing layer 132B of the second supporting element 13B can be made of the same material, and the thickness of the upper infrared light absorbing layer 131B can be substantially equal to the thickness of the lower infrared light absorbing layer 132B. Since the upper infrared light absorbing layer 131B and the lower infrared light absorbing layer 132B of the second supporting element 13B can be made of the same material, and the thickness of the upper infrared light absorbing layer 131B can be substantially equal to the thickness of the lower infrared light absorbing layer 132B; therefore, the upper infrared light absorbing layer 131B and the lower infrared light absorbing layer 132B of the second supporting element 13B have the same material properties, structure and size. Therefore, the second supporting elements 13B will have lower warpage and lower thermal stress. When the upper infrared light absorbing layer 131B and the lower infrared light absorbing layer 132B of each second supporting element 13B are made of the same material, and the thickness of the upper infrared light absorbing layer 131B of each second supporting element 13B is substantially equal to the thickness of the lower infrared light absorbing layer 132B thereof, the second supporting element 13B and the sensing plate 12 can be manufactured using the same manufacturing process. Therefore, the manufacturing process complexity and manufacturing cost of the micro-electromechanical infrared light sensing device 1 can be greatly reduced.

[0074] The sensing plate 12 can absorb the radiation energy of the incident infrared light to change its resistance value, and the reflector 11 can reflect the infrared light not absorbed by the sensing plate 12 to the sensing plate 12, so that the sensing plate 12 can absorb the radiation energy of the infrared light again. When the controller 17 controls the voltage source 16 to apply a voltage difference between the electrode layer 18 of the substrate 10 and the infrared light reflecting layer 111 of the reflector 11, the voltage difference will change the electrostatic force between the electrode layer 18 and the reflector 11, so that the reflector 11 moves toward the direction close to the substrate 10, thereby changing the distance between the reflector 11 and the sensing plate 12. The above mechanism can change the absorption rate of the sensing plate 12 to avoid saturation of the reading circuit, thereby effectively increasing the sensing range of the micro-electromechanical infrared light sensing device 1.

[0075] like Figure 2 As shown, when the controller 17 does not drive the voltage source 16, the reflector 11 is in a state closest to the sensing plate 12, that is, the reflector 11 is in a state as shown in FIG. Figure 2 when the reflector 11 is in the first position, the distance between the reflector 11 and the sensing plate 12 is a first distance D1, at which time the micro-electromechanical infrared light sensing device 1 operates in a first absorption rate mode.

[0076] like Figure 3 As shown, when the temperature of the sensing target (hereinafter referred to as the target temperature) of the micro-electromechanical infrared light sensing device 1 changes to T1, the controller 17 executes control to drive the voltage source 16 to output the first control voltage V1, so that the reflector 11 moves from the first position away from the substrate 10 (such as Figure 2 As shown in FIG. 1 , the reflector 11 moves toward the direction close to the substrate 10. When the blocking elements 15 contact the substrate 10, the reflector 11 stops moving and reaches the position shown in FIG. Figure 3 The second position shown. When the reflector 11 is in the second position, the distance between the reflector 11 and the sensing plate 12 is the second distance D2. At the same time, the blocking elements 15 are clamped between the substrate 10 and the reflector 11. The second distance D2 of the second position is greater than the first distance D1 of the first position. When the reflector 11 is in the second position, the distance between the reflector 11 and the substrate 10 is substantially equal to the height of the blocking elements 15, so that the reflector 11 does not contact the electrode layer 18, and the spacing distance between the sensing plate 12 and the reflector 11 is the largest. At this time, the micro-electromechanical infrared light sensing device 1 operates in the second absorption rate mode.

[0077] When the target temperature of the MEMS infrared light sensing device 1 changes to T2 (T2>T1), the controller 17 executes control to stop driving the voltage source 16 (i.e., the voltage source 16 does not operate), so that the reflector 11 moves away from the substrate 10 and stops after returning to the first position, that is, the distance between the reflector 11 and the sensing plate 12 is the first distance D1. At this time, the reflector 11 is in a position such as Figure 2 The first position shown in the figure allows the MEMS infrared light sensing device 1 to operate in the first absorption rate mode, thereby avoiding saturation of the reading circuit, so that the MEMS infrared light sensing device 1 can obtain correct sensing results. By changing the position of the reflector 11, the MEMS infrared light sensing device 1 can adjust the absorption rate, thereby increasing the sensing range.

[0078] This embodiment is only an example, and the relationship between the height of the reflector 11 and the absorptivity can be changed by modifying the structural design of the micro-electromechanical infrared light sensing device 1; in other words, the height of the reflector 11 and the absorptivity can be inversely proportional or directly proportional. That is, when the reflector 11 drops from the highest position to the lowest position, the micro-electromechanical infrared light sensing device 1 can be changed from a low absorptivity mode to a high absorptivity mode. In another embodiment, when the reflector 11 drops from the highest position to the lowest position, the micro-electromechanical infrared light sensing device 1 can also be changed from a high absorptivity mode to a low absorptivity mode.

[0079] As can be seen from the above, when the target temperature sensed by the MEMS infrared light sensing device 1 is high, the MEMS infrared light sensing device 1 can adjust the voltage output by the voltage source 16 so that the MEMS infrared light sensing device 1 can operate in the first absorption rate mode. On the contrary, when the target temperature sensed by the MEMS infrared light sensing device 1 is low, the MEMS infrared light sensing device 1 can also adjust the voltage output by the voltage source 16 so that the MEMS infrared light sensing device 1 can operate in the second absorption rate mode. In this way, the MEMS infrared light sensing device 1 has a plurality of operating points P1 and P2, so that the total thermal power absorbed by the MEMS infrared light sensing device 1 can always be less than a specific value to prevent the high-resolution reading circuit from reaching saturation.

[0080] In addition, no matter whether the MEMS infrared light sensing device 1 operates in the first absorption rate mode or the second absorption rate mode, the first insulation cavity H1 between the reflector 11 and the substrate 10 and the second insulation cavity H2 between the sensing plate 12 and the reflector 11 can effectively enhance the insulation effect to reduce heat loss. Therefore, the above-mentioned double-layer structure can effectively enhance the performance of the MEMS infrared light sensing device 1.

[0081] See also Figure 4A , which is a cross-sectional view of a micro-electromechanical infrared light sensing device 1 according to another embodiment of the present invention. Figure 2 , Figure 3 In the embodiment shown, the reflector 11 of this embodiment only includes the infrared light reflective layer 111, and the blocking elements 15 are disposed on the lower surface S1 of the infrared light reflective layer 111. The infrared light reflective layer 111 of the reflector 11 and the blocking elements 15 can be made of metal with high reflectivity, such as aluminum (Al), gold (Au), silver (Ag), tungsten (W), copper (Cu), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc. Since the reflector 11 only includes the infrared light reflective layer 111, the electrode layer 18 on the substrate 10 needs to have an insulating layer 181.

[0082] See also Figure 4B , which is a cross-sectional view of a micro-electromechanical infrared light sensing device 1 according to another embodiment of the present invention. Figure 2 , Figure 3In the embodiment shown, the sensor board 12 of this embodiment only includes an upper infrared light absorbing layer 121 and an infrared light sensing layer 123. The sensor board 12 of this embodiment is a double-layer structure consisting of the upper infrared light absorbing layer 121 and the infrared light sensing layer 123. Compared with the sensor board with a three-layer structure, the sensor board of this embodiment may have a lower absorption rate, but it can also achieve the function of absorbing and sensing infrared light.

[0083] See also Figure 5 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Figure 5 As shown, the blocking elements 15 of this embodiment are disposed on the lower surface of the reflective plate 11 , and the connecting line L2 of these blocking elements 15 is a triangle.

[0084] See also Figure 6 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Figure 6 As shown, the blocking elements 15 of this embodiment are disposed on the lower surface of the reflective plate 11 , and the connecting line L3 of these blocking elements 15 is a pentagon.

[0085] See also Figure 7 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Figure 7 As shown, the blocking elements 15 of this embodiment are disposed on the lower surface of the reflective plate 11 , and the connecting line L4 of these blocking elements 15 is a hexagon.

[0086] See also Figure 8 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Figure 8 As shown, the micro-electromechanical infrared light sensing device 1 of this embodiment has a blocking element 15, which is disposed on the lower surface of the reflector 11, and the blocking element 15 can be a circular ring. This embodiment takes a circular ring as an example, but is not limited to this. In other embodiments, the blocking element 15 can also be a rectangular ring or other rings of different shapes.

[0087] See also Fig. 9 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Fig. 9As shown, the blocking elements 15 of the present embodiment are respectively disposed at the first connection parts A1 of the first supporting elements 13A close to one end of the reflecting plate 11. When the controller 17 does not drive the voltage source 16, the reflecting plate 11 is in the first position, and the distance between the reflecting plate 11 and the sensing plate 12 is the first distance D1 at the first position; at this time, the micro-electromechanical infrared light sensing device 1 operates in the first absorption rate mode. The controller 17 of the present embodiment performs control to drive the voltage source 16 to output the first control voltage V1, so that the reflecting plate 11 moves from the first position away from the substrate 10 to the direction close to the substrate 10, and when the blocking elements 15 on the first connection parts A1 of the first supporting elements 13A abut against the substrate 10, the reflecting plate 11 stops moving and reaches the second position. When the reflecting plate 11 is in the second position, the distance between the reflecting plate 11 and the sensing plate 12 is the second distance D2. At this time, the micro-electromechanical infrared light sensing device 1 operates in the second absorption rate mode.

[0088] See also Fig.10 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Fig.10 As shown, the blocking elements 15 of the present embodiment are respectively disposed at the center of the first connection portions A1 of the first supporting elements 13A. When the controller 17 does not drive the voltage source 16, the reflector 11 is in the first position, and the distance between the reflector 11 and the sensing plate 12 is the first distance D1 at the first position; at this time, the micro-electromechanical infrared light sensing device 1 operates in the first absorption rate mode. The controller 17 of the present embodiment performs control to drive the voltage source 16 to output the first control voltage V1, so that the reflector 11 moves from the first position away from the substrate 10 to the direction close to the substrate 10, and when the blocking elements 15 on the first connection portions A1 of the first supporting elements 13A abut against the substrate 10, the reflector 11 stops moving and reaches the second position. When the reflector 11 is in the second position, the distance between the reflector 11 and the sensing plate 12 is the second distance D2. At this time, the micro-electromechanical infrared light sensing device 1 operates in the second absorption rate mode.

[0089] See also Fig.11 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Fig.11As shown, the blocking elements 15 of the present embodiment are respectively disposed at the first bending portions A2 of the first supporting elements 13A. When the controller 17 does not drive the voltage source 16, the reflector 11 is in the first position, and the distance between the reflector 11 and the sensing plate 12 is the first distance D1 at the first position; at this time, the micro-electromechanical infrared light sensing device 1 operates in the first absorption rate mode. When the controller 17 of the present embodiment executes control to drive the voltage source 16 to the first control voltage V1, the reflector 11 moves from the first position away from the substrate 10 to the direction close to the substrate 10, and when the blocking elements 15 on the first bending portions A2 of the first supporting elements 13A abut against the substrate 10, the reflector 11 stops moving and reaches the second position. When the reflector 11 is in the second position, the distance between the reflector 11 and the sensing plate 12 is the second distance D2. At this time, the micro-electromechanical infrared light sensing device 1 operates in the second absorption rate mode.

[0090] See also Fig.12 , which is a three-dimensional diagram of a micro-electromechanical infrared light sensing device 1 according to an embodiment of the present invention. Fig.12 As shown, the blocking elements 15 of the present embodiment are respectively disposed at the center of the first supporting portions A3 of the first supporting elements 13A. When the controller 17 does not drive the voltage source 16, the reflector 11 is in the first position, and the distance between the reflector 11 and the sensing plate 12 is the first distance D1 at the first position; at this time, the micro-electromechanical infrared light sensing device 1 operates in the first absorption rate mode. The controller 17 of the present embodiment performs control to drive the voltage source 16 to the first control voltage V1, so that the reflector 11 moves from the first position away from the substrate 10 to the direction close to the substrate 10, and when the blocking elements 15 on the first supporting portions A3 of the first supporting elements 13A abut against the substrate 10, the reflector 11 stops moving and reaches the second position. When the reflector 11 is in the second position, the distance between the reflector 11 and the sensing plate 12 is the second distance D2. At this time, the micro-electromechanical infrared light sensing device 1 operates in the second absorption rate mode.

[0091] Of course, the above embodiments are merely examples, and the number of the blocking elements 15 of the micro-electromechanical infrared light sensing device 1 of the present invention, the structure of each element and the coordination relationship thereof can be changed according to actual needs and are not limited to the embodiments.

[0092] It is worth mentioning that the existing MEMS infrared light sensing device lacks an effective heat insulation structure, which makes it impossible to effectively reduce heat loss, and thus also causes the performance and sensing accuracy of the MEMS infrared light sensing device to be unable to be effectively improved. In contrast, according to an embodiment of the present invention, the reflector 11 of the MEMS infrared light sensing device 1 is suspended above the substrate 10 and the sensor plate 12 is suspended above the reflector 11, so that two heat insulation cavities (a first heat insulation cavity H1 and a second heat insulation cavity H2) can be formed. This structure can greatly improve the heat insulation effect of the MEMS infrared light sensing device 1 to reduce heat loss, so that the performance and sensing accuracy of the MEMS infrared light sensing device 1 can be effectively improved.

[0093] Furthermore, if the target temperature sensed by the micro-electromechanical infrared light sensing device is relatively high (the infrared light energy radiated by the sensing target is relatively high), the high-resolution reading circuit is prone to saturation when reading the sensing signal of the micro-electromechanical infrared light sensing device. The above situation will cause the micro-electromechanical infrared light sensing device to be unable to correctly sense the higher target temperature, thereby limiting the sensing range of the existing micro-electromechanical infrared light sensing device. In contrast, according to an embodiment of the present invention, the distance between the reflector 11 and the substrate 10 of the micro-electromechanical infrared light sensing device 1 can be adjusted by the voltage source 16, so that the distance between the sensing plate 12 and the reflector 11 is changed, and the absorption rate of the micro-electromechanical infrared light sensing device 1 is changed. Therefore, the micro-electromechanical infrared light sensing device 1 can operate in different absorption rate modes, so it can be applied to environments with different temperatures and can effectively avoid saturation of the saturated reading circuit, thereby greatly increasing the sensing range.

[0094] In addition, according to an embodiment of the present invention, the sensing plate 12 of the micro-electromechanical infrared light sensing device 1 has a symmetrical structure, that is, the upper infrared light absorption layer 121 of the sensing plate 12 and the lower infrared light absorption layer 122 of the sensing plate 12 have the same material and the same thickness, and are symmetrically arranged on two sides of the infrared light sensing layer 123 of the sensing plate 12, so that the stress balance is maintained when the temperature of the sensing plate 12 changes to avoid warping or deformation, thereby further improving the sensing accuracy of the micro-electromechanical infrared light sensing device 1 and reducing the complexity of the manufacturing process.

[0095] See also Fig.13A , Fig. 13B , Fig.14 , Fig.15 and Fig.16 , which are a three-dimensional view and a cross-sectional view of a micro-electromechanical infrared light sensing device 2 according to an embodiment of the present invention. Fig.14 for Fig.13A A cross-sectional view of the micro-electromechanical infrared light sensing device 2 along the II-II section line. Fig.13A , Fig. 13B and Fig.14As shown, the micro-electromechanical infrared light sensing device 2 includes a substrate 20, a reflector 21, a sensor plate 22, a plurality of first supporting elements 23A, a plurality of second supporting elements 23B, a plurality of fixing seats 24, a plurality of blocking elements 25a and 25b, a voltage source 26, a controller 27 and an electrode layer 28. The electrode layer 28 is disposed on the substrate 20. The reflector 21 includes an infrared light reflecting layer 211 and a dielectric material layer 212. Each first supporting element 23A includes a first connecting portion A1, a first bending portion A2, a first supporting portion A3 and a first fixing anchor A4, and has a layered structure including an infrared light reflecting layer 231A and a dielectric material layer 232A. The sensor plate 22 includes an upper infrared light absorbing layer 221, an infrared light sensing layer 223 and a lower infrared light absorbing layer 222. Each second supporting element 23B includes a second connecting portion B1, a second bending portion B2, a second supporting portion B3 and a second fixing anchor B4, and has a layered structure including an upper infrared light absorbing layer 231B, an infrared light sensing layer 233B and a lower infrared light absorbing layer 232B. The blocking elements 25a and 25b are disposed on the lower surface of the reflecting plate 21. Similarly, the reflecting plate 21 of the micro-electromechanical infrared light sensing device 2 is suspended above the substrate 20 and the sensing plate 22 is suspended above the reflecting plate 21. Therefore, two insulating cavities (a first insulating cavity H1 and a second insulating cavity H2) can be formed between the reflecting plate 21 and the substrate 20 and between the reflecting plate 21 and the sensing plate 22, respectively, which can enhance the insulating effect of the micro-electromechanical infrared light sensing device 2 to reduce heat loss.

[0096] The above components and Figure 1A to Figure 1B to Fig.12 The embodiment shown is similar to that shown in the figure, so no further description is given here. Figure 1A to Figure 1B to Fig.12 The embodiment shown is different in that, in the present embodiment, the blocking elements include a plurality of first blocking elements 25a and a plurality of second blocking elements 25b. The first blocking elements 25a have the same height, and the second blocking elements 25b have the same height, and in the present embodiment, the height of the first blocking elements 25a is greater than the height of the second blocking elements 25b. The distance between the center of the first blocking elements 25a and the reflector 21 is greater than the distance between the center of the second blocking elements 25b and the reflector 21. In other words, the first blocking elements 25a are closer to the edge of the reflector 21. In another embodiment, the first blocking elements 25a may also have different heights. Similarly, the second blocking elements 25b may also have different heights.

[0097] The above structure enables the micro-electromechanical infrared light sensing device 2 to have more operating points. Fig.14 As shown, when the controller 27 does not drive the voltage source 26, the reflector 21 is in a state closest to the sensing plate 22. Fig.14In the first position shown, the distance between the reflective plate 21 and the sensing plate 22 is the first distance D1, and the MEMS infrared light sensing device 2 operates in the first absorption rate mode.

[0098] like Fig.15 As shown, when the target temperature sensed by the micro-electromechanical infrared light sensing device 2 changes to T2, the controller 27 executes control to drive the voltage source 26 to output the first control voltage V1, so that the reflector 21 moves from the first position away from the substrate 20 to the direction close to the substrate 20, and the reflector 21 stops moving when the first blocking elements 25a abut against the substrate 20, and reaches the second position. At this time, the distance between the reflector 21 and the sensing plate 22 is the second distance D2, and the micro-electromechanical infrared light sensing device 2 operates in the second absorption rate mode. When the reflector 21 is in the second position, the first blocking elements 25a are sandwiched between the substrate 20 and the reflector 21, and the distance D2' between the reflector 21 and the substrate 20 is substantially equal to the height of the first blocking elements 25a, so that the reflector 21 can be spaced from the electrode layer 28 without contacting each other.

[0099] like Fig.16 As shown, when the target temperature sensed by the micro-electromechanical infrared light sensing device 2 further changes to T1, the controller 27 executes control to drive the voltage source 26 to output the second control voltage V2 (V2>V1), so that the reflector 21 further moves toward the direction close to the substrate 20, and the reflector 21 stops moving when the second blocking elements 25b abut against the substrate 20, and reaches the third position. At this time, the distance between the reflector 21 and the sensing plate 22 is the third distance D3, and the micro-electromechanical infrared light sensing device 2 operates in the third absorption rate mode. When the reflector 21 is in the third position, the second blocking elements 25b are sandwiched between the substrate 20 and the reflector 21, and the distance D3' between the reflector 21 and the substrate 20 is substantially equal to the height of the second blocking elements 25b, so that the reflector 21 can be spaced from the electrode layer 28 without contacting each other.

[0100] When the target temperature sensed by the MEMS infrared light sensing device 2 changes to T3 (T3>T2>T1), the controller 27 executes control to stop driving the voltage source 26 (i.e., the voltage source 26 does not operate), so that the reflector 21 moves away from the substrate 20 and returns to the position as shown in FIG. Fig.14 The first position is shown, at which the distance between the reflector 21 and the sensor 22 is the first distance D1, and the MEMS infrared light sensing device 2 returns to the position shown in FIG. Fig.14 A first absorbance mode of operation is shown.

[0101] As can be seen from the above, the reflector 21 can be moved and converted between the first position, the second position and the third position. Among them, when the reflector 21 is in the first position, the distance between the reflector 21 and the sensing plate 22 is the first distance D1. When the reflector 21 is in the second position, the first blocking elements 25a are clamped between the substrate 20 and / or the reflector 21, and the distance between the reflector 21 and the sensing plate 22 is the second distance D2; the second distance D2 is greater than the first distance D1. When the reflector 21 is in the third position, the second blocking elements 25b are clamped between the substrate 20 and the reflector 21, and the distance between the reflector 21 and the sensing plate 22 is the third distance D3; the third distance D3 is greater than the second distance D2, and the second distance D1 is greater than the first distance D1. The above mechanism can adjust the absorption rate of the sensing plate 22 to avoid saturation of the reading circuit, so that the micro-electromechanical infrared light sensing device 2 has three operating points, thereby effectively increasing the sensing range of the micro-electromechanical infrared light sensing device 2. The MEMS infrared light sensing device 2 may also have more blocking elements of different heights, so that the MEMS infrared light sensing device 2 can have more operating points, thereby meeting different measurement requirements.

[0102] On the other hand, the MEMS infrared light sensing device 2 can also calculate the target temperature and multiple operating points through an algorithm to obtain the optimal distance between the reflector 21 and the sensor plate 22, and adjust the reflector 21 according to the calculation result. In this way, the sensor plate 22 can absorb the most heat energy and will not cause the reading circuit to be saturated.

[0103] Of course, the above is only an example, and the number of the first blocking element 25a and the second blocking element 25b of the micro-electromechanical infrared light sensing device 2 of this embodiment, the structure of each element and the coordination relationship thereof can be changed according to actual needs, and the present invention is not limited thereto.

[0104] See also Fig.17A , Fig. 17B , Fig.18 , Fig.19 , which are a three-dimensional view and a cross-sectional view of an infrared light sensing device 3 according to an embodiment of the present invention. Fig.18 for Fig.17A A cross-sectional view of the micro-electromechanical infrared light sensing device 3 along the III-III section line. Fig.17A , Fig. 17B and Fig.18As shown, the micro-electromechanical infrared light sensing device 3 includes a substrate 30, a reflector 31, a sensor plate 32, a plurality of first supporting elements 33A, a plurality of second supporting elements 33B, a plurality of fixing seats 34, a plurality of blocking elements 35, a voltage source 36, a controller 37 and an electrode layer 38. The electrode layer 38 is disposed on the substrate 30. The reflector 31 includes an infrared light reflecting layer 311 and a dielectric material layer 312. Each first supporting element 33A includes a first connecting portion A1, a first bending portion A2, a first supporting portion A3 and a first fixing anchor A4, and has a layered structure including an infrared light reflecting layer 331A and a dielectric material layer 332A. The sensor plate 32 includes an upper infrared light absorbing layer 321, an infrared light sensing layer 323 and a lower infrared light absorbing layer 322. Each second supporting element 33B includes a second connecting portion B1, a second bending portion B2, a second supporting portion B3 and a second fixing anchor B4, and has a layered structure including an upper infrared light absorbing layer 331B, an infrared light sensing layer 333B and a lower infrared light absorbing layer 332B. Similarly, the reflector 31 of the micro-electromechanical infrared light sensing device 3 is suspended above the substrate 30 and the sensing plate 32 is suspended above the reflector 31, so that two insulating cavities (a first insulating cavity H1 and a second insulating cavity H2) can be formed between the reflector 31 and the substrate 30 and between the sensing plate 32 and the reflector 31, respectively, which can enhance the insulating effect of the micro-electromechanical infrared light sensing device 3 to reduce heat loss.

[0105] The above components and Figures 1A to 12 The embodiments shown are similar, so they will not be described in detail here. Fig.18 As shown, this embodiment and Figures 1A to 12 The difference between the embodiment shown is that the blocking elements 35 of this embodiment are disposed on the substrate 30, and the material of the blocking elements 35 can be the same as that of the substrate 30. The above structure enables the micro-electromechanical infrared light sensing device 3 to achieve the same Figures 1A to 12 The embodiment shown has similar effects.

[0106] like Fig.18 As shown, when the controller 37 does not drive the voltage source 36, the sensing plate 32 is in a state closest to the reflecting plate 31. At this time, the reflecting plate 31 is in a state as shown in FIG. Fig.18 In the first position shown, the distance between the reflective plate 31 and the sensing plate 32 is the first distance D1, and the MEMS infrared light sensing device 3 operates in the first absorption rate mode.

[0107] like Fig.19 As shown, when the target temperature sensed by the micro-electromechanical infrared light sensing device 3 changes to T1, the controller 37 executes control to drive the voltage source 36 to output the first control voltage V1, so that the reflector 31 moves from the first position away from the substrate 30 to the direction close to the substrate 30. When the blocking elements 35 abut against the reflector 31, the reflector 31 stops moving and reaches the position shown in FIG. Fig.19The second position is shown. At this time, the distance between the reflector 21 and the sensing plate 22 is the second distance D2, and the micro-electromechanical infrared light sensing device 3 operates in the second absorption rate mode. When the reflector 21 is in the second position, the blocking elements 35 are clamped between the substrate 30 and the reflector 31, and the distance between the reflector 31 and the substrate 30 is substantially equal to the height of the blocking elements 35, so that the reflector 31 can be spaced from the electrode layer 38 without contacting each other. At this time, the sensing plate 32 is in a state farthest from the reflector 31 (infrared light reflecting layer 311).

[0108] When the target temperature of the MEMS infrared light sensing device 3 changes to T2 (T2>T1), the controller 37 executes control to stop driving the voltage source 36 (i.e., the voltage source 36 does not operate), so that the reflector 31 moves away from the substrate 30 to return to the position as shown in FIG. Fig.18 In the first position shown, the distance between the reflector 11 and the sensor 12 is the first distance D1, and the MEMS infrared light sensing device 3 returns to operate in the first absorption rate mode. The above mechanism can avoid saturation of the reading circuit, improve the sensing accuracy of the MEMS infrared light sensing device 3, and at the same time improve its sensing range.

[0109] The above is only an example. The number, shape and arrangement of the blocking elements 35 of the MEMS infrared light sensing device 3 of this embodiment, the structure of each element and the coordination relationship thereof can be changed according to actual needs, and the present invention is not limited thereto.

[0110] In summary, according to the embodiment of the present invention, the reflector of the MEMS infrared light sensing device is suspended above the substrate and the sensing plate is suspended above the reflector, so two heat-insulating cavities can be formed. This structure can greatly improve the heat-insulating effect of the MEMS infrared light sensing device to reduce heat loss, so it can effectively improve the performance and sensing accuracy of the MEMS infrared light sensing device.

[0111] According to the embodiment of the present invention, the distance between the reflector and the substrate of the micro-electromechanical infrared light sensing device can be adjusted by a voltage source, so that the distance between the sensing plate and the reflector changes synchronously, thereby changing the absorption rate of the micro-electromechanical infrared light sensing device. Therefore, the micro-electromechanical infrared light sensing device can operate in different absorption rate modes, so it can be applied to environments with different temperatures and can effectively avoid saturation of the saturated reading circuit, thereby greatly increasing the sensing range.

[0112] Furthermore, according to an embodiment of the present invention, the MEMS infrared light sensing device has one or more blocking elements (such as a first blocking element and a second blocking element) of different heights. Therefore, the MEMS infrared light sensing device is adjustable and has multiple operating points, further increasing the sensing range of the MEMS infrared light sensing device.

[0113] In addition, according to the embodiment of the present invention, the sensing plate of the micro-electromechanical infrared light sensing device has a symmetrical structure, so that the overall stress of the sensing plate is balanced to avoid warping and deformation. Therefore, the distance between the sensing plate and the reflective plate can be accurately controlled, thereby further improving the sensing accuracy of the micro-electromechanical infrared light sensing device and reducing the complexity of the manufacturing process.

[0114] The above description is for illustrative purposes only and is not intended to be limiting. Any other equivalent modifications or changes made thereto without departing from the spirit and scope of the present invention should be included in the appended claims.

Claims

1. A micro-electromechanical infrared light sensing device, characterized in that: The micro-electromechanical infrared light sensing device comprises: substrate; Induction board; A plurality of second supporting elements connected to the sensing plate so that the sensing plate is suspended above the substrate; A reflective plate, located between the substrate and the sensing plate; A plurality of first supporting elements connected to the reflective plate so that the reflective plate is suspended between the substrate and the sensing plate; A plurality of blocking elements are located between the substrate and the reflective plate; An electrode layer is disposed on the substrate; as well as a voltage source electrically connecting the reflector and the electrode layer, The voltage source generates a voltage difference between the reflector and the electrode layer to control the movement of the reflector. When the reflector moves toward the substrate and at least one of the blocking elements contacts the substrate or the reflector, the distance between the reflector and the sensing plate increases. 2 . The micro-electromechanical infrared light sensing device as claimed in claim 1 , further comprising an insulating layer, wherein the insulating layer covers the electrode layer.

3. The micro-electromechanical infrared light sensing device as described in claim 1, wherein the reflective plate can move between a first position away from the substrate and a second position close to the substrate, when the reflective plate is in the first position, the distance between the reflective plate and the sensing plate is a first distance, when the reflective plate is in the second position, the distance between the reflective plate and the sensing plate is a second distance, and at least one of the blocking elements is clamped between the substrate and the reflective plate, wherein the second distance is greater than the first distance. 4 . The micro-electromechanical infrared light sensing device as claimed in claim 3 , wherein when the reflective plate is at the second position, a distance between the substrate and the reflective plate is equal to a height of at least one of the blocking elements.

5. The micro-electromechanical infrared light sensing device as claimed in claim 3, wherein the blocking elements include a plurality of first blocking elements and a plurality of second blocking elements, and the reflective plate can move among the first position, the second position and the third position, wherein: When the reflective plate is in the second position, the first blocking elements are clamped between the substrate or the reflective plate. When the reflective plate is in the third position, the second blocking elements are clamped between the substrate or the reflective plate. The distance between the reflective plate and the sensing plate is a third distance, which is greater than the second distance.

6. The micro-electromechanical infrared light sensing device as claimed in claim 5, wherein the first blocking elements are connected to at least one of the first supporting elements, the second blocking elements are connected to the reflective plate, and a height of at least one of the first blocking elements is greater than a height of at least one of the second blocking elements. 7 . The micro-electromechanical infrared light sensing device as claimed in claim 5 , wherein a distance between the first blocking elements and a center of the reflective plate is greater than a distance between the second blocking elements and a center of the reflective plate. 8 . The micro-electromechanical infrared light sensing device as claimed in claim 1 , wherein the blocking elements are disposed on the reflective plate, the substrate or the first supporting elements. 9 . The micro-electromechanical infrared light sensing device as claimed in claim 8 , wherein the connection lines of the blocking elements can form a polygon, and the polygon is an axisymmetric polygon or a centrosymmetric polygon.

10. The micro-electromechanical infrared light sensing device as described in claim 1, wherein the sensing plate comprises an upper infrared light absorbing layer and an infrared light sensing layer, the infrared light sensing layer has a lower surface facing the substrate and an upper surface opposite to the lower surface, and the upper infrared light absorbing layer is disposed on the upper surface. 11 . The micro-electromechanical infrared light sensing device as claimed in claim 10 , wherein the sensing plate further comprises a lower infrared light absorbing layer, and the lower infrared light absorbing layer is disposed on the lower surface of the infrared light sensing layer. 12 . The micro-electromechanical infrared light sensing device as claimed in claim 11 , wherein a material of the upper infrared light absorbing layer is the same as a material of the lower infrared light absorbing layer. 13 . The micro-electromechanical infrared light sensing device as claimed in claim 11 , wherein a thickness of the upper infrared light absorbing layer is equal to a thickness of the lower infrared light absorbing layer. 14 . The micro-electromechanical infrared light sensing device as claimed in claim 1 , wherein the reflective plate comprises an infrared light reflective layer and a dielectric material layer, the infrared light reflective layer has a lower surface facing the substrate, and the dielectric material layer is disposed on the lower surface of the infrared light reflective layer.

15. A micro-electromechanical infrared light sensing device as described in claim 1, wherein each of the first supporting elements further includes an infrared light reflecting layer and a dielectric material layer, the infrared light reflecting layer of each of the first supporting elements includes a lower surface adjacent to the substrate, and the dielectric material layer of each of the first supporting elements is arranged on the lower surface of the infrared light reflecting layer of each of the first supporting elements. 16 . The micro-electromechanical infrared light sensing device as claimed in claim 1 , wherein a rigidity of each of the first supporting elements toward the substrate is smaller than a rigidity of the reflective plate toward the substrate.

17. A micro-electromechanical infrared light sensing device as described in claim 1, wherein each of the second supporting elements further includes a lower infrared light absorption layer, an infrared light sensing layer and an upper infrared light absorption layer adjacent to the substrate, and the infrared light sensing layer of each of the second supporting elements is arranged between the upper infrared light absorption layer and the lower infrared light absorption layer of each of the second supporting elements.

18. The micro-electromechanical infrared light sensing device as described in claim 1 further comprises a fixing seat, wherein one end of each of the first supporting elements has a first fixing anchor, the first fixing anchor is fixed on the substrate, the fixing seat is fixed on the first fixing anchor of the first supporting element, and one end of the corresponding second supporting element has a second fixing anchor, the second fixing anchor is fixed on the fixing seat.

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