Optoelectronic devices and methods of manufacturing optoelectronic devices

Abstract

An optoelectronic component (1) having a carrier (3) and a plurality of semiconductor chips (2) is described, wherein the semiconductor chips each have at least one contact surface (25) on a main surface (21) facing away from the carrier. Each contact surface is in electrical contact with a connection track (5), wherein the connection track is guided onto the carrier via an edge (210) of the main surface of the semiconductor chip. Furthermore, a method for producing an optoelectronic component is described.

Description

Technical Field

[0001] This application relates to an optoelectronic device and a method for manufacturing the optoelectronic device.

[0002] This patent application claims priority to German Patent Application 10 2019 219 016.2, the disclosure of which is incorporated herein by reference. Background Technology

[0003] To manufacture optoelectronic devices, light-emitting diodes (LEDs) are typically mounted on printed circuit boards and electrically connected to the printed circuit boards. Summary of the Invention

[0004] One task is to provide an optoelectronic device that can be manufactured in a simplified manner.

[0005] This task is addressed in particular by the optoelectronic device according to the independent claims and the method for manufacturing the optoelectronic device. Other design and suitability are the subject of the dependent patent claims.

[0006] An optoelectronic device comprising a carrier and a plurality of semiconductor chips is described. The semiconductor chips are configured, for example, to generate radiation in the ultraviolet, visible, or infrared spectral range. For example, the semiconductor chip has at least one active region configured to generate radiation. The semiconductor chips of the optoelectronic device can be of the same type in terms of the emitted radiation. Therefore, the spectral emission characteristics of the semiconductor chips differ only within tolerances due to manufacturing processes. Alternatively, different semiconductor chips can be arranged on the carrier, for example, semiconductor chips emitting radiation in different spectral ranges (e.g., red, green, and blue spectral ranges).

[0007] According to at least one embodiment of the optoelectronic device, the semiconductor chip is fixed to the carrier using a connecting device. The connecting device is specifically used to mechanically and stably fix the semiconductor chip to the carrier. For example, the connecting device comprises an adhesive, such as a polymeric material like silicone or epoxy resin.

[0008] Specifically, the connection device can be electrically insulated. Therefore, the connection device is not used for electrical contact with the semiconductor chip.

[0009] Furthermore, the connection device is permeable to radiation emitted by the optoelectronic device during operation. For example, the connection device is disposed between the semiconductor chip and the radiation emitting surface of the optoelectronic device.

[0010] According to at least one embodiment of the optoelectronic device, the semiconductor chip has at least one contact surface on a main surface facing away from the carrier. Specifically, the semiconductor chip may have all the contact surfaces required for electrical contact with the semiconductor chip on this main surface. These contact surfaces, for example, are used for electrical contact with the semiconductor chip, such that by applying a voltage between two contact surfaces, charge carriers can enter the active region from opposite sides and recombine there to emit radiation.

[0011] According to at least one embodiment of the optoelectronic device, the contact surfaces are in electrical contact with the connecting rails. The connecting rails are particularly directly adjacent to the contact surfaces.

[0012] The connection rails are also specifically used to electrically connect semiconductor chips to each other. For example, at least some of the semiconductor chips are connected to each other in series circuits, parallel circuits, or a combination of series and parallel circuits. Furthermore, some or all of the semiconductor chips may be located in a matrix interconnect, for example, in the form of an active matrix or a passive matrix.

[0013] Specifically, the connection track is guided onto the carrier via the edge of the main surface of the semiconductor chip. The connection track is formed, for example, in the form of a carrier coating, on which the semiconductor chip is disposed. Therefore, bonding wires are not required to electrically contact the contact surfaces of the semiconductor chip disposed on the main surface. In particular, there is no gaseous medium such as air between the semiconductor chip and the connection track.

[0014] In at least one embodiment of the optoelectronic device, the optoelectronic device has a carrier and a plurality of semiconductor chips, wherein the semiconductor chips are fixed to the carrier by a connecting device and each semiconductor chip has at least one contact surface on a main surface facing away from the carrier. The contact surfaces are respectively in electrical contact with connecting rails, wherein the connecting rails are guided onto the carrier via the edges of the main surfaces of the semiconductor chips.

[0015] In manufacturing such optoelectronic devices, the semiconductor chip can be arranged on the carrier, which itself can still be completely unstructured. Specifically, the carrier does not yet require printed wires for electrical contact with the semiconductor chip. Therefore, electrical contact between the connecting rails and the semiconductor chip can be made while the semiconductor chip is already fixed to the carrier. By constructing the connecting rails in the form of a coating, all connecting rails can be constructed simultaneously, allowing electrical contact of all semiconductor chips in a single manufacturing step.

[0016] According to at least one embodiment of the optoelectronic device, the connecting device at least partially covers the side surface of the semiconductor chip. In a top view of the optoelectronic device, the connecting device has a greater lateral extension than the corresponding semiconductor chip, which is fixed to the carrier by the connecting device. For example, the connecting device surrounds the corresponding semiconductor chip along its entire periphery.

[0017] The term "lateral" here refers to the direction extending parallel to the main extension plane of the carrier. Correspondingly, the vertical direction refers to the direction extending perpendicular to the main extension plane of the carrier.

[0018] According to at least one embodiment of the optoelectronic device, the connecting device has a viscosity between 5 Pa*s and 30 Pa*s, preferably between 10 Pa*s and 20 Pa*s, including the respective extreme values. It has been shown that connecting devices with viscosities within this range can reliably cover the side surfaces of semiconductor chips.

[0019] According to at least one embodiment of the optoelectronic device, the connection device has a thixotropic index between 2 and 8, particularly between 3 and 5, including the respective endpoints. The thixotropic index of a material is a measure of the intensity with which the viscosity of a material changes due to external mechanical influences (e.g., due to pressure and / or shear forces). For example, the thixotropic index can be determined by the quotient between the viscosity at a low rotational speed of a rotational viscometer and the viscosity at a high rotational speed of a rotational viscometer, where the high speed is typically ten times that of the low speed. The greater the decrease in viscosity at high rotational speeds, the higher the thixotropic index. It has been shown that connection devices with thixotropic indices within this range can be handled particularly reliably, allowing the side surfaces of semiconductor chips to be covered.

[0020] According to at least one embodiment of the optoelectronic device, the connecting track is directly adjacent to the connecting device. In particular, viewed in the lateral direction, the connecting device may be the only element located between the side surface of the semiconductor chip and the connecting track.

[0021] According to at least one embodiment of the optoelectronic device, the active region of the semiconductor chip configured to generate radiation is covered on its side surface by the connecting means. The connecting means can therefore be used to electrically insulate the active region from the connecting track. Therefore, the semiconductor chip itself does not necessarily need to have an insulating layer such as a passivation layer on its side surface. However, such an insulating layer may be additionally present.

[0022] According to at least one embodiment of the optoelectronic device, when viewed from the carrier, the side surface of the semiconductor chip is covered by the connecting means for at least 1%, at least 30%, at least 50%, or at least 80% of the height of the semiconductor chip. Furthermore, the side surface may be covered for up to 100% of the height of the semiconductor chip, for example, between 1% and 100%, including both extreme values.

[0023] In this context, the height represents the extension of the semiconductor chip in the vertical direction, i.e., perpendicular to the main extension plane of the carrier. The further the connection device extends from the carrier along the edge direction of the main surface of the semiconductor chip, the smaller the height difference that the connection track at the edge of the semiconductor chip must overcome. This simplifies the reliable manufacturing of the connection track and thus simplifies the electrical contacts of the semiconductor chip.

[0024] According to at least one embodiment of the optoelectronic device, the angle between the side surface of the semiconductor chip and the outer surface of the connecting device is at least locally at least 10°, at least 30°, or at least 45°. In this case, the outer surface is the surface of the connecting device facing away from the side surface of the semiconductor chip. For a curved outer surface, this angle varies depending on the distance from the side surface. In this case, the angle is related to the tangent at a corresponding location on the outer surface in a cross-section extending perpendicular to the main extending plane of the carrier and perpendicular to the side surface of the semiconductor chip. For example, the angle at any location on the outer surface is at least 10° or at least 30°.

[0025] The greater the angle between the side surface of the semiconductor chip and the outer surface of the connector, the flatter the edge that will be covered by the connector track.

[0026] According to at least one embodiment of the optoelectronic device, the connecting track is locally and directly adjacent to the side surface of the semiconductor chip. For example, viewed along the side surface of the semiconductor chip, the connecting track is adjacent to the side surface of the semiconductor chip between the edge of the main surface of the semiconductor chip and the outer surface of the connecting device in the side surface region of the semiconductor chip.

[0027] According to at least one embodiment of the optoelectronic device, the carrier and the connecting device are permeable to the radiation generated by the semiconductor chip during operation. Specifically, the side of the carrier facing away from the semiconductor chip can form the radiation exit surface of the optoelectronic device.

[0028] In other words, the semiconductor chip is disposed on the mounting side of the carrier, and the back side of the carrier opposite to the mounting side forms the radiation exit surface of the optoelectronic device. Therefore, radiation generated in the active region of the semiconductor chip passes through the connecting device and the carrier before exiting from the radiation exit region of the optoelectronic device.

[0029] According to at least one embodiment of the optoelectronic device, the connecting track has a maximum of 30° in a top view of the optoelectronic device. Or at most 20 Lateral extension.

[0030] In this case, the lateral extension of the connecting track means the extension of the connecting track perpendicular to its main extension axis. The main extension axis of the connecting track can be straight, or partially curved or bent.

[0031] Connecting tracks with small lateral extensions are particularly suitable for connection to radiation-permeable carriers. In particular, the connecting tracks can be thin enough that they do not interfere with the human eye when viewed through photoelectric devices, especially even when the device is off.

[0032] Alternatively, the lateral extension of the connecting track can also be greater. For example, the lateral extension can be at most as large as the edge length of the semiconductor chip.

[0033] According to at least one embodiment of the optoelectronic device, the connecting track is partially and directly adjacent to the carrier, particularly to the mounting side of the carrier. Specifically, the connecting track is directly adjacent to the carrier at locations where, in a top view of the optoelectronic device, the carrier has no connecting means. For example, the connecting track between adjacent semiconductor chips is partially and directly adjacent to the carrier.

[0034] According to at least one embodiment of the optoelectronic device, the connection device is integrally constructed and is the only element between the carrier and the connection track on the semiconductor chip side. It has been shown that the connection device, which is used to fix the semiconductor chip, can be configured to additionally perform other functions, particularly simply guiding the connection track via the edge of the semiconductor chip and / or electrically insulating the active region from the corresponding connection track. No additional elements, such as insulating layers, are required after the semiconductor chip has been fixed to the carrier.

[0035] However, in an alternative embodiment of the optoelectronic device, an insulating layer may be provided in addition to the connection device, wherein the insulating layer extends at least partially between the carrier and the connection track.

[0036] Furthermore, a method for manufacturing optoelectronic devices is described. This method is particularly suitable for manufacturing optoelectronic devices as described above. Therefore, the features described in conjunction with the optoelectronic device can also be used in this method, and vice versa.

[0037] According to at least one embodiment of the method for manufacturing an optoelectronic device, a carrier is provided, and a plurality of semiconductor chips are disposed on the carrier, wherein each semiconductor chip has at least one connection surface on a main surface opposite to the carrier. Connection tracks are formed on the carrier having the semiconductor chips disposed on the carrier. Therefore, the connection tracks are formed only after the semiconductor chips have been disposed on the carrier and, in particular, have been fixed to the carrier.

[0038] According to at least one embodiment of the method, the position of the semiconductor chip on the carrier, particularly the position of the connecting surface of the semiconductor chip on the carrier, is detected after it is placed on the carrier, and the connecting track is formed based on the determined position. Therefore, for each optoelectronic device to be manufactured, the exact positions where the semiconductor chip is placed and the actual location of the connecting surface to contact the connecting track can be determined. Thus, manufacturing tolerances caused by placing the semiconductor chip on the carrier can be taken into account when forming the connecting track. Consequently, particularly narrow connecting tracks can be used to achieve reliable contact of the semiconductor chip. In contrast, in devices where the conductive surfaces for mounting and contacting the semiconductor chip are already on the carrier before mounting the semiconductor chip, these conductive surfaces must be constructed large enough that the semiconductor chip to be electrically contacted is electrically contacted even if there is a lateral offset within the manufacturing tolerance range during the placement of the semiconductor chip.

[0039] Conversely, using the described method, the width of the connecting track in the lateral direction is completely independent of the precision of the placement method for arranging the semiconductor chip on the carrier.

[0040] According to at least one embodiment of the method, the position is detected by means of automated optical inspection. For example, the actual position of the optically detected semiconductor chip can be stored in a memory and used for subsequent formation of the connection track.

[0041] According to at least one embodiment of the method, the carrier is a thin film or comprises glass. For example, the carrier is arranged on an auxiliary carrier at least during the placement of the semiconductor chip on the carrier and / or during the formation of connection tracks on the carrier.

[0042] For example, the carrier, particularly a thin film carrier, is laminated onto an auxiliary carrier and then removed from the auxiliary carrier after manufacturing. Thus, the advantages of a flexible carrier can be combined with the simplified processing of a rigid carrier.

[0043] According to at least one embodiment of the method, when the semiconductor chip is disposed on the carrier, it is fixed to the carrier by a connecting device, and the connecting device at least partially covers the side surface of the semiconductor chip when fixing the semiconductor chip.

[0044] Specifically, more interconnect material is used for each semiconductor chip compared to the interconnect material required simply to fix the semiconductor chip to the carrier. Interconnect material extending laterally beyond the semiconductor chip can cover the side surfaces of the semiconductor chip. The degree of side surface coverage can be adjusted, for example, by the number of interconnects and / or the viscosity and / or thixotropic index of the interconnects.

[0045] The following effects can be achieved in particular by using the described optoelectronic device and the described method.

[0046] After the semiconductor chip has been placed on and, in particular, fixed to the carrier, it can be electrically contacted by means of connecting rails. In this case, the carrier can be rigid or flexible, and can be completely unstructured at the time of semiconductor chip assembly, particularly constructed without metal contact rails.

[0047] The connection device for securing a semiconductor chip to a carrier can additionally perform other functions, such as electrically insulating the active region of the semiconductor chip from the associated connection track, or forming a ramp on the side surface of the semiconductor chip through which the connection track can be guided. Additional insulating layers on the side surface of the semiconductor chip and / or the carrier can be omitted. However, such insulating layers may be present. This securing method is suitable for both rigid and flexible carriers.

[0048] The photoelectric device can emit light through the carrier. Furthermore, the photoelectric device generally has high transmittance when in the off state, allowing it to be mounted, for example, on a window or vehicle window without significantly impairing the view through the window or vehicle window.

[0049] During the manufacturing of the optoelectronic device, the position of the semiconductor chip disposed on the carrier can be detected before the connection track is formed. Knowing the actual position of the semiconductor chip, the lateral structure of the coating used to form the connection track can be constructed specifically for the corresponding device, thereby taking into account positional deviations caused by adjustment tolerances during placement. This allows for particularly narrow connection tracks. To achieve sufficient current carrying capacity, the cross-section of the connection track can be increased if necessary by increasing its thickness without causing a significant increase in shadow when viewed through the optoelectronic device.

[0050] These optoelectronic devices are typically suitable for applications requiring, for example, multiple semiconductor chips arranged in a matrix. In particular, these devices can also be configured for mounting on curved surfaces and / or on windows or vehicle windows, such as in vehicles, e.g., motor vehicles.

[0051] Furthermore, these devices can be easily adapted to specific design requirements for light sources or display devices. Attached Figure Description

[0052] Other suitability and extensions may be derived from the following description of the embodiments in conjunction with the accompanying drawings.

[0053] Figure 1A and 1B Based on cross-sectional view ( Figure 1A ) and top view ( Figure 1B The fragment in the image illustrates an embodiment of an optoelectronic device;

[0054] Figure 2A , Figure 2B and Figure 2C An embodiment of a method for manufacturing optoelectronic devices is illustrated based on intermediate steps shown in schematic cross-sections;

[0055] Figure 3A and Figure 3B Based on the schematic cross-sectional diagram ( Figure 3A ) and schematic top view ( Figure 3B The intermediate steps in the diagram illustrate an embodiment of a method for manufacturing optoelectronic devices; and

[0056] Figure 4 The measurement of the line profile of a semiconductor chip fixed by a connecting device is shown.

[0057] Components that are the same, of the same type, or have the same function are represented by the same reference numerals in the figure.

[0058] These diagrams are schematic and therefore not necessarily drawn to scale. In particular, relatively small components and especially layer thicknesses may be exaggerated for better display or understanding. Detailed Implementation

[0059] exist Figure 1A and Figure 1B In the embodiments of the optoelectronic device shown, only a segment with a semiconductor chip 2 configured to generate radiation is shown for illustrative purposes. The optoelectronic device 1 may have a large number of such semiconductor chips 2 on the carrier 3, for example, at least 5, at least 10, or at least 100. For example, the semiconductor chips 2 are at least partially connected in series and / or in parallel with each other. Furthermore, the semiconductor chips 2 or the semiconductor chip group can be manipulated individually, for example by means of a matrix circuit, such as an active matrix circuit or a passive matrix circuit.

[0060] Semiconductor chip 2 is fixed to carrier 3 by means of connecting device 4. Carrier 3 has a mounting side 31 facing the semiconductor chip and a back side 32 opposite to the mounting side. In the illustrated embodiment, the back side of carrier 3 forms the radiation exit surface 10 of optoelectronic device 1. Semiconductor chip 2 has a contact surface 25 for electrical contact on its main surface 21 facing away from the carrier. The side of semiconductor chip 2 facing carrier 3 does not have a contact portion for electrical contact.

[0061] During operation of the optoelectronic device 1, charge carriers can be injected into the semiconductor chip 2 through the contact surface 25 and recombine in the active region 20 of the semiconductor chip, such as a pn junction, to emit radiation.

[0062] For example, suitable for semiconductor chip 2 is an LED with a so-called flip-chip geometry, in which there is no or at least only a small portion of radiation emitted during operation on the main surface where the contact surface is located.

[0063] The contact surfaces 25 are electrically contacted via connecting rails 5. The contact rails 5 are guided by the edge 210 of the main surface 21 of the semiconductor chip 2. In a top view of the mounting side 31 of the carrier 3, the connecting rails 5 at least partially cover the contact surfaces 25 of the semiconductor chip 2.

[0064] The connecting device 4 partially covers the side surface 22 of the semiconductor chip 2. Specifically, the connecting device 4 covers the side surface 22 up to the height of the active region 20. The connecting device 4 electrically insulates the active region 20 from the connecting track 5.

[0065] The main surface 21 of the semiconductor chip 2 is free of the material of the connecting device 4. In the lateral direction, the connecting device 4 protrudes beyond the semiconductor chip 2 in the top view of the optoelectronic device 1, particularly along the entire outer periphery of the semiconductor chip 2. The connecting track 5 is directly adjacent to the connecting device 4. In the lateral direction of the semiconductor chip 2, the connecting track 5 is directly adjacent to the mounting side 31 of the carrier 3.

[0066] In the area of ​​side surface 22 not covered by the connecting device 4, the connecting track 5 is adjacent to the semiconductor chip 2. Specifically, the connecting device 4 is the only element arranged between the side surface 22 of the semiconductor chip 2 and the connecting track 5 when viewed in the lateral direction. A protective layer 6 may optionally be formed on the side of the carrier 3 opposite to the back side 32. For example, the protective layer 6 is laminated onto the carrier 3.

[0067] In the illustrated embodiment, the carrier 3 is suitably radiation-transmissive. For example, the carrier 3 comprises a plastic material such as polyethylene (PE), polyethylene terephthalate (PET), an imide (e.g., polyimide (PI) or polymethyl methacrylate (PMMA)), or glass.

[0068] This material is also particularly suitable for carriers 3 with flexible structures in the form of thin films. Alternatively, rigid carriers 3 can also be used, for example, the carrier may contain glass.

[0069] The lateral extension of connecting track 5 can be constructed with exceptional precision. For example, the lateral extension can be up to 30. Or at most 20 Thus, combined with a radiation-permeable carrier 3, a photoelectric device 1 with maximum lateral transparency of the semiconductor chip 2 can be achieved. In particular, the connecting tracks 5 can be implemented so thin that they do not interfere with human observers when viewed through the photoelectric device.

[0070] Therefore, there is no radiation-impermeable layer, such as a metal layer for electrical contact with the semiconductor chip 2, between the active region 20 and the carrier 3.

[0071] Figure 4 The measurement of the line profile of the height h of the semiconductor chip 2, which, as described above, is fixed to the carrier 3 by means of the connecting device 4, is shown. This measurement demonstrates that most of the side surface of the semiconductor chip can be covered by the connecting medium 4. Furthermore, a large angle can be achieved between the side surface of the semiconductor chip 2 and the outer surface of the connecting device 4.

[0072] The connection device 4, which covers the side surface 22, simplifies the construction of the connection track 5 in the form of a coating. The further the connection device 4 extends vertically along the side surface 22 to the edge 210 of the main surface 21, the smaller the height difference that the connection track 5 must cover at the edge 210. Furthermore, the outer surface 41 of the connection device 4 can form a relatively large angle 410 with the side surface 22 of the semiconductor chip 2, for example, at least 30° or at least 45°. This further increases the reliability of the connection track 5 extending beyond the edge 210.

[0073] For example, epoxy or silicone resins are suitable as radiation-permeable bonding devices. Preferably, they are epoxy or silicone resins with a viscosity between 10 and 20 Pa*s and a thixotropic index between 3 and 5.

[0074] However, unlike the described embodiment, the design of the described connection device 4 is also applicable to other forms of the optoelectronic device 1. For example, the radiation from the optoelectronic device 1 can also occur on the side where the semiconductor chip 2 is located on the carrier 3, i.e., on the mounting side. In this case, the carrier 3 can also be radiation-impermeable, for example, reflective for the radiation to be generated. Furthermore, the connection device 4 can also be radiation-impermeable, for example, reflective.

[0075] Alternatively, a rigid carrier can be used. Furthermore, it is conceivable that the semiconductor chip 2 has only a contact surface 25 on its main surface 21, and additional contact surfaces are arranged on the side of the semiconductor chip 2 opposite to the main surface. Therefore, in this case, each semiconductor chip has only one contact surface that can be electrically contacted by means of a connecting track in the form of a coating.

[0076] based on Figures 2A to 2C An embodiment of a method for manufacturing optoelectronic devices is shown, wherein exemplary manufacturing is performed as described above. Figure 1A and Figure 1B Devices constructed as described.

[0077] Provide carrier 3 ( Figure 2A In the case of the flexible carrier 3, the carrier 3 is preferably arranged on the auxiliary carrier 7. For example, the carrier 3 is bonded to the auxiliary carrier 7, for example, by using a lamination of a dry resist.

[0078] Therefore, the processing on the flexible carrier 3 can be performed in a manner similar to that on the rigid carrier.

[0079] Semiconductor chip 2 is applied to carrier 3 by means of connection device 4. Figure 2B When the semiconductor chip 2 is placed on the carrier 3, the material of the connecting device 4 shifts laterally and partially covers the side surface 22 of the semiconductor chip 2. The degree of coverage of the side surface 22 can be adjusted by combining the number of connecting devices with the viscosity and thixotropic index of the connecting devices. For example, the connecting devices are based on polymer materials, such as epoxy resin or silicone resin.

[0080] Viewed vertically, the connecting device 4 is the only element between the mounting side 31 of the carrier 3 and the semiconductor chip 2.

[0081] The main surface 21 of the semiconductor chip 2 remains without the connecting device 4, particularly the contact surface 25. In the cross-sectional view, the connecting device 4 is formed on the side of the semiconductor chip 2 in an inclined plane from the mounting side 31 of the carrier 3 along the direction of the semiconductor chip 2 away from the main surface 21 of the carrier 3.

[0082] A structured metal coating is then applied to form the connection track 5. For example, copper is suitable for the connection track 5. The connection track 5 is directly adjacent to the associated contact surface 25, the associated semiconductor chip 2, the connection device 4, and the mounting side 31 of the carrier 3.

[0083] Optionally, the carrier 3 and the semiconductor chip 2 applied on the carrier 3 may then be equipped with a protective layer, for example by applying a thin film, such as by lamination.

[0084] Finally, the auxiliary carrier 7 can be removed. The carrier 3 can also be processed into an optoelectronic device using a roll-to-roll method.

[0085] Figure 3A and Figure 3B An intermediate step of another embodiment of a method for manufacturing optoelectronic devices is shown. This method essentially corresponds to the combination... Figures 2A to 2C The described embodiments.

[0086] Specifically, the semiconductor chip 2 can be fixed on the carrier 3, such as in combination with... Figure 2A and Figure 2B As described. However, it is also conceivable in principle that the connecting device 4 does not cover or significantly cover the side surface 22 of the semiconductor chip 2, but rather, for example, after the semiconductor chip is fixed on the carrier 3, an insulating layer is applied, wherein the insulating layer partially covers the side surface 22 of the semiconductor chip 2.

[0087] After the semiconductor chip 2 is fixed, its precise position is detected, for example, optically using an image recording device 8. Figure 3B As shown in the image, the positions P11, P12, P21, P22, ... of the four semiconductor chips 2 in the nominally uniform matrix arrangement deviate from a precise regular pattern due to tolerances in the placement of the semiconductor chips 2 on the carrier 3. Typical adjustment tolerances can be as high as 50. .

[0088] After detecting positions P11, P12, P21, P22, ..., connection tracks 5 are formed knowing these positions. Therefore, the distribution of connection tracks 5 takes into account the actual position of the contact surface 25 of the semiconductor chip 2 on the carrier 3. The external connection surface 51 of the optoelectronic device 1 can also be formed together with the connection tracks 5.

[0089] In the illustrated embodiment, purely illustratively, a row of semiconductor chips 2 are electrically connected in series. However, the type of electrical contacts for the semiconductor chips 2 can vary over a wide range. Overall, this method allows for highly refined connection tracks 5, thereby achieving high transparency of the optoelectronic device 1. The cross-sectional area of ​​the connection tracks required for sufficient current carrying capacity can be achieved by increasing the layer thickness during connection track deposition.

[0090] This invention is not limited to the description based on embodiments. Rather, the invention includes every new feature and every combination of features, particularly every combination of features in the claims, even if the feature or combination itself is not explicitly stated in the claims or embodiments.

[0091] List of reference numerals

[0092] 1 Optoelectronic devices

[0093] 10 Radiation exit surface

[0094] 2 Semiconductor chips

[0095] 20 active areas

[0096] 21 Main Surface

[0097] 210 Edge

[0098] 22 side surfaces

[0099] 25 Contact Surface

[0100] 3. Carrier

[0101] 31 Installation side

[0102] 32 Dorsal side

[0103] 4. Connecting device

[0104] 41 Outer surface

[0105] 410 degrees

[0106] 5 Connecting rails

[0107] 51 External connection surface

[0108] 6. Protective layer

[0109] 7. Auxiliary carrier

[0110] Positions of P11, P12, P21, and P22

[0111] 8. Image recording equipment.

Claims

1. An optoelectronic component (1) having a carrier (3) and a plurality of semiconductor chips (2), wherein - the semiconductor chips are fixed on the carrier with a connecting device (4); - the semiconductor chips each have at least one contact surface (25) on a main surface (21) facing away from the carrier; - the semiconductor chips each comprise an active region (20) arranged for generating radiation, wherein the active region (20) is spaced apart from the main surface (21) of the semiconductor chip, and - each contact surface is in electrical contact with a connection track (5), wherein the connection track is guided onto the carrier directly through an edge (210) of the main surface of the semiconductor chip. The connecting device at least partially covers a lateral surface (22) of the semiconductor chip, and the connection track directly adjoins the connecting device. The semiconductor chip is covered by the connecting device on the lateral surface. The lateral surface of the semiconductor chip is covered by the connecting device between 1% and 100%, including the two end values, of the height of the semiconductor chip, as seen from the carrier. An angle (410) between the lateral surface of the semiconductor chip and an outer surface (41) of the connecting device is at least partially at least 10°.

2. The optoelectronic device of claim 1, wherein, The connection track partially directly adjoins the lateral surface of the semiconductor chip.

3. The optoelectronic device of claim 2, wherein, The carrier and the connecting device are transparent to the radiation to be generated by the semiconductor chip during operation, and wherein a side of the carrier facing away from the semiconductor chip forms a radiation exit face (10) of the optoelectronic component.

4. The optoelectronic device of claim 2 or 3, wherein, The connection track has a lateral extent of at most 30 pm in a top view of the optoelectronic component.

5. The optoelectronic device of any of claims 2-3, wherein, The connection track partially directly adjoins the carrier.

6. The optoelectronic device of any one of claims 2-3, wherein, The connecting device is of one piece and is the only element between the carrier and the connection track laterally of the semiconductor chip.

7. The optoelectronic device of any one of claims 1 to 3, wherein, The connecting device has a viscosity of between 5 Pa*s and 30 Pa*s and a thixotropy index of between 2 and 8, including the respective end values.

8. The optoelectronic device of any one of claims 1 to 3, wherein, 12. A method for producing an optoelectronic component (1) according to any one of claims 1 to 11, having the following steps: a) providing a carrier (3); b) arranging a plurality of semiconductor chips (2) on the carrier, wherein the semiconductor chips each have at least one connection surface (25) on a main surface (21) facing away from the carrier, wherein the semiconductor chips are fixed on the carrier with a connecting device (4); c) forming a connection track (5) on the carrier with the semiconductor chips arranged on the carrier.

9. The optoelectronic device of any one of claims 1 to 3, wherein, The position of the semiconductor chips on the carrier is detected after step b), and the connection track is formed in step c) on the basis of the determined position.

10. The optoelectronic device of any one of claims 1 to 3, wherein, The position is detected by means of automated optical inspection.

11. The optoelectronic device of any one of claims 1 to 3, wherein, The carrier is a film, and the carrier is arranged on a secondary carrier (7) at least during steps b) and c). The carrier comprises glass. The connecting device at least partially covers a lateral surface of the semiconductor chip when fixing the semiconductor chip. ​ ​ 13. The method of claim 12, wherein, ​ 14. The method of claim 13, wherein, ​ 15. The method of any one of claims 12 to 14, wherein, ​ 16. The method of any one of claims 12 to 14, wherein, ​ 17. The method of any one of claims 12 to 14, wherein, ​

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